TWI682464B - Heat treatment apparatus - Google Patents

Abstract

A heat treatment apparatus can appropriately adjust the temperature of the peripheral portion of the substrate.

A plurality of halogen lamps HL for preparing to heat the semiconductor wafer W are arranged in two layers on top and bottom to form a grid and form a rectangular light source area. Two auxiliary lamps AHL are arranged at the four corners of the rectangular light source area. Each auxiliary lamp AHL system can control the output individually. When the preliminary heating of the semiconductor wafer W is performed by a plurality of halogen lamps HL, the temperature of the peripheral portion of the semiconductor wafer W facing the four corners of the rectangular light source area is individually adjusted by the auxiliary lamp AHL. Thereby, during the preliminary heating by the halogen lamp H, the temperature of the peripheral portion of the semiconductor wafer W including the portions facing the four corners can be adjusted appropriately, and the semiconductor wafer during the preliminary heating can be adjusted The temperature distribution in the plane of W becomes uniform.

Description

Heat treatment device

The present invention relates to a heat treatment device that heats a thin wafer-shaped precision electronic substrate (hereinafter, simply referred to as a "substrate") such as a semiconductor wafer (wafer) by heating the substrate.

In the manufacturing process of semiconductor devices, there is a flash lamp annealing (FLA: flash lamp anneal) that heats a semiconductor wafer in a very short time, which has attracted attention. Flash lamp annealing uses a xenon flash lamp (hereinafter referred to as "flash lamp" to mean a xenon flash lamp) to illuminate the surface of the semiconductor wafer to flash, thereby only making the surface of the semiconductor wafer for a very short time (a few milliseconds) (Below) Internal heat treatment technology.

The radiation spectral distribution of the xenon flash lamp is from the ultraviolet region to the near infrared region, the wavelength is shorter than the conventional halogen lamp (halogen lamp), and it is roughly consistent with the basic absorption band of the silicon semiconductor wafer. Therefore, when the semiconductor wafer is irradiated with flash light from the xenon flash lamp, the penetrating light is small and the semiconductor wafer can be rapidly heated. It was also found that as long as the flash irradiation is performed for a very short time of several milliseconds or less, it is possible to selectively heat up only the surface of the semiconductor wafer.

Such flash lamp annealing can be used in a process that requires a very short time for heating, for example, it is typically used to activate impurities that have been implanted in a semiconductor wafer. As long as the surface of the semiconductor wafer with impurities implanted by ion implantation is irradiated from the flash lamp, the surface of the semiconductor wafer can be heated to the activation temperature in a very short time, Without diffusing the impurities deeper, only the impurity activation can be performed.

As a heat treatment apparatus using such a xenon flash lamp, for example, Patent Document 1 discloses that a flash lamp is arranged on the front side of a semiconductor wafer and a halogen lamp is arranged on the back side, and a desired heat treatment is performed by a combination of these. In the heat treatment apparatus disclosed in Patent Document 1, the semiconductor wafer is preliminarily heated to a certain temperature by a halogen lamp, and then the surface of the semiconductor wafer is heated to a desired processing temperature by flash irradiation from a flash lamp .

[Prior Technical Literature]

[Patent Literature]

Patent Document 1: Japanese Patent Laid-Open No. 2015-18909.

In the heat treatment apparatus disclosed in Patent Document 1, a plurality of rod-shaped halogen lamps as a preliminary heating source are arranged in two layers on top and bottom to form a grid to form a rectangular light source area. When the semiconductor wafer is heated by such a preparatory heating source, a problem arises that it is difficult to improve the uniformity of the temperature distribution in the plane of the semiconductor wafer. In particular, it is difficult to adjust the temperature of the peripheral portion of the semiconductor wafer facing the four corners of the rectangular light source area. The reason is that, for example, when a portion of the peripheral edge of the semiconductor wafer that faces the four corners of the rectangular light source area becomes higher than the surrounding temperature (so-called hot spot), the When the output of the rod-shaped halogen lamp opposite to the part is reduced, the temperature of other parts of the semiconductor wafer is lowered than the surroundings (so-called cold spot).

The present invention has been developed in view of the above-mentioned problems, and its object is to provide a heat treatment apparatus that can appropriately adjust the temperature of the peripheral portion of the substrate.

In order to solve the above-mentioned problems, the invention of claim 1 is a heat treatment device that heats a substrate by irradiating the substrate with light, and includes: a chamber for housing the substrate; and a holding portion for holding the substrate in the chamber A light irradiating part, a plurality of rod-shaped lamps arranged in two layers in a lattice shape are arranged in a rectangular light source area, and the rectangular light source area includes an area facing the main surface of the substrate held by the holding portion; and The auxiliary lamps are arranged at the four corners of the rectangular light source area.

Furthermore, the invention of claim 2 is the heat treatment device of the invention of claim 1, wherein the auxiliary lamp has a U-shape.

Further, the invention of claim 3 is the heat treatment device of the invention of claim 2, wherein a part of the auxiliary lamp is formed along the edge of the substrate held by the holding portion.

Furthermore, the invention of claim 4 is the heat treatment device of the invention of claim 1, wherein the auxiliary lamp has a rod shape.

In addition, the invention of claim 5 is the heat treatment device of the invention of claim 4, wherein the auxiliary lamp has the same length as the plurality of rod lamps, and is provided with a filament at a position closer to one side than the center in the longitudinal direction (filament).

In addition, the invention of claim 6 is the heat treatment device of any one of claims 1 to 5, wherein the plurality of rod-shaped lamps include a lamp provided with filaments at both ends across the central portion in the longitudinal direction.

According to the inventions of claims 1 to 6, since the auxiliary lamps are arranged at the four corners of the rectangular light source area in which a plurality of rod-shaped lamps are arranged in two layers in a grid, the periphery of the substrate facing the four corners can be individually adjusted And adjust the temperature of the peripheral portion of the substrate appropriately.

1‧‧‧heat treatment device

3‧‧‧Control Department

4‧‧‧halogen heating department

5‧‧‧Flash heating section

6‧‧‧ chamber

7‧‧‧Maintaining Department

10‧‧‧ Transfer agency

11‧‧‧Transfer arm

12‧‧‧ Lifting pin

13‧‧‧horizontal movement mechanism

14‧‧‧ Lifting mechanism

41‧‧‧Frame of halogen heating part

43‧‧‧Reflector

51‧‧‧Frame of flash heating section

52‧‧‧Reflector

53‧‧‧Light radiation window

61‧‧‧Chamber side

62‧‧‧recess

63‧‧‧ Upper chamber window

64‧‧‧Lower chamber window

65‧‧‧Heat treatment space

66‧‧‧Transport opening

68, 69‧‧‧Reflection ring

71‧‧‧Abutment ring

72‧‧‧Link

74‧‧‧Carrier

75‧‧‧Retaining plate

75a‧‧‧Keep noodles

76‧‧‧Guide ring

77‧‧‧ substrate support pin

78‧‧‧ opening

79‧‧‧Through hole

81‧‧‧Gas supply hole

82, 87‧‧‧ buffer space

83‧‧‧Gas supply pipe

84, 89, 192‧‧‧ valve

85‧‧‧Process gas supply source

86‧‧‧Gas vent

88, 191‧‧‧ gas exhaust pipe

120‧‧‧radiation thermometer

185‧‧‧Gate valve

190‧‧‧Exhaust Department

AHL‧‧‧Auxiliary light

C1 to C3‧‧‧ region

FL‧‧‧Flash

HL‧‧‧halogen lamp

SHL‧‧‧fragment lamp

W‧‧‧Semiconductor wafer

FIG. 1 is a longitudinal cross-sectional view showing the configuration of the heat treatment apparatus of the present invention.

2 is a perspective view showing the overall appearance of the holding portion.

FIG. 3 is a top view of a susceptor.

4 is a cross-sectional view of the carrier.

5 is a plan view of the transfer mechanism.

6 is a side view of the transfer mechanism.

7 is a plan view showing the arrangement of a plurality of halogen lamps.

8 is a schematic diagram showing the configuration of the auxiliary lamp.

9 is a plan view of the semiconductor wafer during preliminary heating.

10 is a schematic diagram showing the shape of the auxiliary lamp of the second embodiment.

FIG. 11 is a schematic diagram showing the shape of the auxiliary lamp of the third embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<First embodiment>

FIG. 1 is a longitudinal cross-sectional view showing the configuration of the heat treatment apparatus 1 of the present invention. The heat treatment apparatus 1 of the present embodiment refers to a flash lamp annealing apparatus that heats the semiconductor wafer W by flashing the disc-shaped semiconductor wafer W as a substrate. Although the size of the semiconductor wafer W to be processed is not particularly limited, it is, for example, ψ 300 mm or ψ 450 mm. In addition, in FIG. 1 and subsequent figures, the size or number of each part is exaggerated or simplified as necessary for ease of understanding.

The heat treatment apparatus 1 includes: a chamber 6 for accommodating the semiconductor wafer W; a flash heating unit 5 in which plural flash lamps FL are built; and a halogen heating unit 4 in which plural halogen lamps HL are built. A flash heater 5 is provided on the upper side of the chamber 6, and a halogen heater 4 is provided on the lower side. In addition, the heat treatment apparatus 1 is provided inside the chamber 6 with a holding section 7 that holds the semiconductor wafer W in a horizontal posture, and a transfer mechanism 10 that performs the semiconductor wafer W between the holding section 7 and the outside of the apparatus Transfer. Further, the heat treatment apparatus 1 includes a control unit 3 for controlling the halogen heating unit 4, the flash heating unit 5, and each operating mechanism provided in the chamber 6 to perform heat treatment of the semiconductor wafer W.

The chamber 6 is formed by attaching a quartz chamber window above and below the cylindrical chamber side portion 61. The chamber side portion 61 has a generally cylindrical shape that opens up and down, and an upper chamber window 63 is attached to the upper opening to close, and a lower chamber window 64 is attached to the lower opening to close. The upper chamber window 63 constituting the top plate portion of the chamber 6 is a circular plate-shaped member formed of quartz, and has a function as a quartz window that penetrates the flash light emitted from the flash heating portion 5 into the chamber 6 . In addition, the lower chamber window 64 constituting the bottom plate portion of the chamber 6 is also a circular plate-shaped member formed of quartz, and has a quartz window that transmits light from the halogen heating section 4 into the chamber 6 Function.

In addition, a reflection ring 68 is attached to the upper wall surface inside the chamber side 61, and a reflection ring 69 is attached to the lower portion. The reflection rings 68 and 69 are formed into a circular ring shape. The upper reflection ring 68 is installed by fitting from the upper side of the chamber side 61. On the other hand, the lower reflection ring 69 is fitted by fitting into the lower side of the chamber side 61 and fixing the house with small screws not shown. In other words, the reflection rings 68 and 69 are detachably attached to the side portion 61 of the chamber. The inner space of the chamber 6, that is, the space surrounded by the upper chamber window 63, the lower chamber window 64, the chamber side 61, and the reflection rings 68, 69 is defined as the heat treatment space 65.

By attaching the reflection rings 68 and 69 to the side portion 61 of the chamber, a recess 62 can be formed on the inner wall surface of the chamber 6. That is, a recess 62 surrounded by the center portion of the inner wall surface of the chamber side portion 61 where the reflection rings 68 and 69 are not attached, the lower end surface of the reflection ring 68, and the upper end surface of the reflection ring 69 is formed. The recess 62 is formed in an annular shape along the horizontal direction on the inner wall surface of the chamber 6 and surrounds the holding portion 7 for holding the semiconductor wafer W. The chamber side portion 61 and the reflection rings 68 and 69 are formed of a metal material (for example, stainless steel) excellent in strength and heat resistance.

In addition, a transport opening (furnace opening) 66 for carrying in and out the semiconductor wafer W into the chamber 6 is formed in the chamber side portion 61. The conveyance opening 66 can be opened and closed by a gate valve 185. The transport opening 66 communicates with the outer peripheral surface of the recess 62. Therefore, when the gate valve 185 opens the conveyance opening 66, the semiconductor wafer W can be carried into the heat treatment space 65 and the semiconductor wafer W can be carried out from the heat treatment space 65 through the conveyance opening 66 through the recess 62. In addition, when the gate valve 185 closes the transport opening 66, the heat treatment space 65 in the chamber 6 is formed as a closed space.

In addition, a gas supply hole 81 for supplying the processing gas to the heat treatment space 65 is formed in the upper part of the inner wall of the chamber 6. The gas supply hole 81 may be formed at a position higher than the recess 62 and provided at the reflection ring 68. The gas supply hole 81 is connected to the gas supply pipe 83 through the buffer space 82 formed in an annular shape inside the side wall of the chamber 6. The gas supply pipe 83 is connected to the processing gas supply source 85. In addition, a valve 84 is inserted in the middle of the path of the gas supply pipe 83. When the valve 84 is opened, the processing gas is supplied to the buffer space 82 from the processing gas supply source 85. The processing gas system that has flowed into the buffer space 82 flows inside the buffer space 82 whose fluid resistance is smaller than that of the gas supply hole 81, and is supplied from the gas supply hole 81 into the heat treatment space 65. As the processing gas system, an inert gas such as nitrogen (N ₂ ) or a reactive gas (nitrogen in this embodiment) such as oxygen (O ₂ ) and ammonia (NH ₃ ) can be used.

On the other hand, a gas exhaust hole 86 for exhausting gas in the heat treatment space 65 is formed in the lower portion of the inner wall of the chamber 6. The gas exhaust hole 86 may be formed at a position lower than the recess 62 and provided at the reflection ring 69. The gas exhaust hole 86 is connected to the gas exhaust pipe 88 through the buffer space 87 formed in an annular shape inside the side wall of the chamber 6. The gas exhaust pipe 88 is connected to the exhaust portion 190. In addition, a valve 89 is inserted in the middle of the path of the gas exhaust pipe 88. When the valve 89 is opened, the gas in the heat treatment space 65 is discharged from the gas exhaust hole 86 to the gas exhaust pipe 88 via the buffer space 87. Furthermore, the gas supply hole 81 and the gas exhaust hole 86 may be provided in plural along the circumferential direction of the chamber 6 or may be in a slit shape. In addition, the processing gas supply source 85 and the exhaust unit 190 may be either a mechanism installed in the heat treatment apparatus 1 or a factory facility that can be installed in the heat treatment apparatus 1.

In addition, a gas exhaust pipe 191 that exhausts the gas in the heat treatment space 65 is also connected to the front end of the transport opening 66. The gas exhaust pipe 191 is connected to the exhaust portion 190 through the valve 192. By opening the valve 192, the gas in the chamber 6 can be exhausted through the transport opening 66.

FIG. 2 is a perspective view showing the overall appearance of the holding portion 7. The holding portion 7 is configured by including a base ring 71, a coupling portion 72 and a carrier 74. The abutment ring 71, the connecting portion 72 and the carrier 74 are all made of quartz. That is, the entire holding portion 7 is made of quartz.

The abutment ring 71 refers to an arc-shaped quartz member that lacks a part from the ring shape. This missing portion is provided to prevent interference between the transfer arm 11 of the transfer mechanism 10 and the abutment ring 71 described later. The abutment ring 71 is placed on the bottom surface of the recess 62, whereby it can be supported by the wall surface of the chamber 6 (see FIG. 1). On the upper surface of the base ring 71, a plurality of coupling parts 72 (four in this embodiment) are vertically provided along the circumferential direction of the circular ring shape. The connecting portion 72 is also a member of quartz, and can be fixed to the abutment ring 71 by welding.

The carrier 74 is supported by the four connecting portions 72 provided on the abutment ring 71. FIG. 3 is a plan view of the carrier 74. 4 is a cross-sectional view of the carrier 74. The carrier 74 includes a holding plate 75, a guide ring 76, and a plurality of substrate support pins 77. The holding plate 75 is a substantially circular flat plate member formed of quartz. The diameter of the holding plate 75 is larger than the diameter of the semiconductor wafer W. That is, the holding plate 75 has a larger plane size than the semiconductor wafer W.

A guide ring 76 is provided on the upper surface peripheral portion of the holding plate 75. The guide ring 76 refers to a ring-shaped member having an inner diameter larger than the diameter of the semiconductor wafer W. For example, when the diameter of the semiconductor wafer W is ψ 300 mm, the inner diameter of the guide ring 76 is ψ 320 mm. The inner circumference of the guide ring 76 is formed as a tapered surface that widens upward from the holding plate 75. The guide ring 76 is formed of the same quartz as the holding plate 75. The guide ring 76 can be welded to the upper surface of the holding plate 75, and can also be fixed to the holding plate 75 by pins or the like formed by different processing. Alternatively, the holding plate 75 and the guide ring 76 may be processed as an integral member.

A region of the upper surface of the holding plate 75 that is more inside than the guide ring 76 serves as a planar holding surface 75a for holding the semiconductor wafer W. A plurality of substrate support pins 77 are erected on the holding surface 75a of the holding plate 75. In the present embodiment, a total of twelve substrate support pins 77 are provided every 30° along a circumference concentric with the outer circumference of the holding surface 75a (the outer circumference of the guide ring 76). The diameter of the circle in which 12 substrate support pins 77 are arranged (the distance between the opposing substrate support pins 77) is smaller than the diameter of the semiconductor wafer W. If the diameter of the semiconductor wafer W is ψ 300mm, the diameter is ψ 270 mm to ψ 280 mm (in this embodiment, ψ 280 mm). The respective substrate support pins 77 are formed of quartz. The plurality of substrate support pins 77 can be provided on the upper surface of the holding plate 75 by welding, or can be processed integrally with the holding plate 75.

Returning to FIG. 2, the four connecting portions 72 erected on the abutment ring 71 and the peripheral portion of the holding plate 75 of the carrier 74 are adhered and fixed by welding. That is, the carrier 74 and the abutment ring 71 are fixedly connected by the connecting portion 72. By supporting the abutment ring 71 of the holding portion 7 on the wall surface of the chamber 6, the holding portion 7 can be installed in the chamber 6. With the holding portion 7 attached to the chamber 6, the holding plate 75 of the carrier 74 assumes a horizontal posture (posture where the normal line coincides with the vertical direction). That is, the holding surface 75a of the holding plate 75 becomes a horizontal plane.

The semiconductor wafer W that has been carried into the chamber 6 is placed in a horizontal posture and held above the carrier 74 of the holding portion 7 mounted in the chamber 6. At this time, the semiconductor wafer W is supported and held by the carrier 74 by the twelve substrate support pins 77 standing on the holding plate 75. More strictly speaking, the upper ends of the twelve substrate support pins 77 are in contact with the lower surface of the semiconductor wafer W to support the semiconductor wafer W. Since the height of the 12 substrate support pins 77 (the distance from the upper end of the substrate support pin 77 to the holding surface 75a of the holding plate 75) is uniform, the semiconductor wafer W can be supported in the horizontal posture by the 12 substrate support pins 77 .

In addition, the semiconductor wafer W is supported at a predetermined interval from the holding surface 75a of the holding plate 75 by a plurality of substrate support pins 77. The thickness of the guide ring 76 is greater than the height of the substrate support pin 77. Therefore, the positional deviation in the horizontal direction of the semiconductor wafer W supported by the plurality of substrate support pins 77 can be prevented by the guide ring 76.

As shown in FIGS. 2 and 3, an opening 78 is formed through the holding plate 75 of the carrier 74 so as to penetrate vertically. The opening 78 is provided to receive radiation light (infrared light) radiated from the lower surface of the semiconductor wafer W held by the carrier 74 by the radiation thermometer 120 (see FIG. 1 ). That is, the radiation thermometer 120 receives the light radiated from the lower surface of the semiconductor wafer W held by the carrier 74 through the opening 78, and the semiconductor wafer is measured by a separately provided detector The temperature of W. Further, the holding plate 75 of the carrier 74 is provided with four through-holes 79 through which the lift pins 12 of the transfer mechanism 10 described later pass through the transfer of the semiconductor wafer W.

FIG. 5 is a plan view of the transfer mechanism 10. 6 is a side view of the transfer mechanism 10. The transfer mechanism 10 includes two transfer arms 11. The transfer arm 11 is formed in a circular arc shape along a substantially circular recess 62. Two lifting pins 12 are vertically arranged on each transfer arm 11. Each transfer arm 11 can be rotated by a horizontal movement mechanism 13. The horizontal movement mechanism 13 causes the pair of transfer arms 11 to move horizontally relative to the holding portion 7 between the transfer operation position (solid line position in FIG. 5) and the retracted position (two-dot chain line position in FIG. 5). The loading operation position transfers the semiconductor wafer W, and the retracted position does not overlap the semiconductor wafer W held by the holding portion 7 in a plan view. As the horizontal movement mechanism 13, each transfer arm 11 can be individually rotated by a separate motor, or a pair of transfer arms 11 can be linked and rotated by a motor using a link mechanism.

In addition, the pair of transfer arms 11 are moved up and down together with the horizontal movement mechanism 13 by the lifting mechanism 14. When the lift mechanism 14 raises the pair of transfer arms 11 at the transfer operation position, a total of four lift pins 12 pass through the through-hole 79 (see FIGS. 2 and 3) provided in the carrier 74, and the lift pins The upper end of 12 will protrude from the upper surface of the carrier 74. On the other hand, when the lift mechanism 14 lowers the pair of transfer arms 11 at the transfer operation position and draws the lift pins 12 from the through holes 79, and the horizontal movement mechanism 13 moves to open the pair of transfer arms 11, each The transfer arm 11 will move to the retreat position. The retracted position of the pair of transfer arms 11 is directly above the base ring 71 of the holding portion 7. Since the abutment ring 71 is placed on the bottom surface of the recess 62, the retreat position of the transfer arm 11 becomes the inside of the recess 62. In addition, an exhaust mechanism (not shown) is also provided near the location where the driving portion of the transfer mechanism 10 (the horizontal movement mechanism 13 and the elevator purchase 14) is installed, and the atmosphere around the drive portion of the transfer mechanism 10 is provided. It can be discharged to the outside of the chamber 6.

Returning to FIG. 1, the flash heater 5 provided above the chamber 6 is composed of a light source and a reflector 52 inside the frame 51. The light source is composed of a plurality of light sources (30 in this embodiment) (Root) Xenon flash lamp FL, the reflector 52 is provided so as to cover above the light source. In addition, a light radiation window 53 is attached to the bottom of the frame 51 of the flash heater 5. The light radiation window 53 constituting the bottom plate portion of the flash heater 5 refers to a plate-shaped quartz window formed of quartz. The flash heater 5 is provided above the chamber 6 to face the light radiation window 53 and the upper chamber window 63. The flash lamp FL illuminates the heat treatment space 65 through the light radiation window 53 and the upper chamber window 63 from above the chamber 6.

The plurality of flash lamps FL refer to each of the rod-shaped lamps having a long cylindrical shape, and along the main surface of the semiconductor wafer W held by the holding portion 7 in each longitudinal direction (in other words, along the horizontal (Directions) are arranged in a plane so that they are parallel to each other. Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane.

The xenon flash lamp FL includes: a rod-shaped glass tube (discharge tube), in which xenon gas is enclosed, and an anode and a cathode connected to a condenser are arranged at both ends; and a trigger electrode , Attached to the outer peripheral surface of the glass tube. Since xenon gas is an electrical insulator, even if charges are accumulated in the capacitor, under normal conditions, no electricity flows into the glass tube. However, when a high voltage is applied to the trigger electrode and the insulation is destroyed, the electricity stored in the capacitor will instantly flow into the glass tube, and the light will be released by the excitation of the xenon atoms or molecules at that time. In such a xenon flash lamp FL, since the electrostatic energy accumulated in the capacitor in advance is converted into an extremely short light pulse of 0.1 millisecond to 100 milliseconds, it is possible to have a continuously lit light source such as a halogen lamp HL Features of extremely intense light. That is, the flash lamp FL refers to a pulse light emitting lamp that emits light instantly in a very short time less than 1 second. Furthermore, the lighting time of the flash lamp FL can be adjusted by the coil constant of the lamp power supply that supplies power to the flash lamp FL.

In addition, the reflector 52 is provided above the plurality of flashes FL so as to cover the entirety of the plurality of flashes FL. The basic function of the reflector 52 is to reflect the flashes emitted from the plurality of flash lamps FL to the side of the heat treatment space 65. The reflector 52 is formed of an aluminum alloy plate, and its surface (the side facing the side of the flash lamp FL) is roughened by blasting.

The halogen heating unit 4 provided below the chamber 6 has a plurality of (40 in this embodiment) halogen lamps HL built in the inside of the housing 41 as the main light source. The halogen heating section 4 refers to a light irradiation section that heats the semiconductor wafer W by irradiating light to the heat treatment space 65 through the lower chamber window 64 from below the chamber 6 through a plurality of halogen lamps HL.

7 is a plan view showing the arrangement of a plurality of halogen lamps HL as the main light source of the halogen heating unit 4. The 40 halogen lamps HL are divided into two layers. Twenty halogen lamps HL are arranged on the upper layer closer to the holding portion 7, and 20 halogen lamps HL are also arranged on the lower layer farther from the holding portion 7 than the upper layer. Each halogen lamp HL refers to a rod-shaped lamp having a long cylindrical shape. The halogen lamps HL with 20 upper and lower layers are parallel to each other along the main surface of the semiconductor wafer W held by the holding portion 7 (in other words, along the horizontal direction) in their respective longitudinal directions. Arranged by. Therefore, the planes formed by the arrangement of the halogen lamps HL on the upper and lower layers are horizontal planes.

Furthermore, as shown in FIG. 7, with respect to the upper layer and the lower layer, the arrangement density of the halogen lamps HL in the region facing the peripheral edge portion of the semiconductor wafer W held by the holding portion 7 becomes more than The arrangement density of the halogen lamps HL in the region facing the central portion of the semiconductor wafer W held by the holding portion 7 is higher. That is, the arrangement pitch of the halogen lamps HL of the upper and lower layers is that the peripheral portion of the lamp arrangement is shorter than the central portion. Therefore, it is possible to irradiate a larger amount of light to the peripheral portion of the semiconductor wafer W that is likely to undergo a temperature drop when heated by the light irradiation from the halogen heating portion 4.

In addition, the lamp group composed of the halogen lamp HL on the upper layer and the lamp group composed of the halogen lamp HL on the lower layer are arranged in a grid pattern. That is, a total of 40 halogen lamps HL are arranged so that the longitudinal direction of the 20 halogen lamps HL arranged on the upper layer and the longitudinal direction of the 20 halogen lamps HL arranged on the lower layer are orthogonal to each other. By arranging a plurality of rod-shaped halogen lamps HL on the upper and lower two layers into a grid, a rectangular light source area can be formed.

The halogen lamp HL refers to a filament-type light source that causes the filament to heat up and emit light by being energized to the filament disposed inside the glass tube. Inside the glass tube, a gas obtained by introducing a small amount of halogen elements (iodine, bromine, etc.) into an inert gas such as nitrogen or argon is enclosed. By introducing the halogen element, the temperature of the filament can be set to a high temperature while suppressing the breakage of the filament. Therefore, the halogen lamp HL system has a longer life and can continuously irradiate stronger light than ordinary white light bulbs. That is, the halogen lamp HL refers to a continuous lighting lamp that continuously emits light for at least 1 second. In addition, since the halogen lamp HL is a rod-shaped lamp, the life is long, and by arranging the halogen lamp HL in the horizontal direction, the radiation efficiency of the semiconductor wafer W upward can be excellent.

In the 40 halogen lamps HL, there are four special lamps which are divided into two filaments. In the case of particularly distinguishing the luminaire formed by bisecting such a filament, it is called a segment lamp (SHL). However, the appearance shape of the segment lamp SHL refers to the filament shape light source with the same size and shape as other ordinary 36 halogen lamps HL, and the filament is provided in the inert gas into which the halogen element has been introduced in a small amount. , The segment lamp SHL is the same as other halogen lamps HL. Therefore, when there is no need to distinguish the segment lamp SHL in particular, the other 36 general halogen lamps HL and the four segment lamps SHL are collectively referred to simply as the halogen lamp HL.

In the frame 41 of the halogen heating part 4, a reflector 43 is also provided below the second-layer halogen lamp HL (FIG. 1 ). The reflector 43 reflects the light emitted from the plurality of halogen lamps HL to the side of the heat treatment space 65.

In addition, in the halogen heating unit 4 of the present embodiment, in addition to the 40 halogen lamps HL as the main light source, the auxiliary lamp AHL as the auxiliary light source is also arranged. 8 is a schematic diagram showing the configuration of the auxiliary lamp AHL. In the same figure, for convenience of illustration, the ordinary 36 halogen lamps HL are shown by dotted lines. The so-called ordinary halogen lamp HL refers to a lamp in which an undivided filament is arranged from one end side of a rod-shaped glass tube to the other end side. In addition, FIG. 8 shows the segment lamp SHL different from the ordinary halogen lamp HL, and shows the semiconductor wafer W held by the holding unit 7 in a projection display.

As shown in FIG. 8, in the rectangular light source area formed by arranging 40 rod-shaped halogen lamps HL in two layers on top and bottom in a grid, the semiconductor wafer W held by the holding portion 7 is completely included The area where the Lord faces.

The segment lamp SHL is provided with filaments at both ends across the central portion in the longitudinal direction of the rod-shaped glass tube. The filament is formed by winding thin wires such as tungsten in multiple layers at a predetermined density. In the segment lamp SHL, the filaments on both sides are connected by a linear tungsten wire of the same material as the filament. When power is applied to the segment lamp SHL, only the filaments on both sides of the bisection lamp become hot and glow. That is, the segment lamp SHL does not emit light at the central portion in the longitudinal direction of the rod-shaped glass tube, but emits light at both sides across the central portion.

In the arrangement of the grid-shaped lamps on the upper and lower two floors, two segment lights SHL are included in each of the upper and lower layers. As shown in FIG. 8, a total of four is arranged so that the filament formed by halving faces the peripheral portion of the semiconductor wafer W corresponding to the four corners of the rectangular light source area formed by the 40 halogen lamps HL Root fragment lights SHL. Therefore, the respective segment lamps SHL irradiate light to two of the peripheral portions of the semiconductor wafer W facing the four corners of the rectangular light source region. In addition, hereinafter, the peripheral portion of the semiconductor wafer W facing the four corners of the rectangular light source area formed by the 40 halogen lamps HL is also referred to as “four corners of the semiconductor wafer W”.

Eight auxiliary lamps AHL are provided as auxiliary light sources in the halogen heating unit 4. In the first embodiment, the appearance shape of each auxiliary lamp AHL is U-shaped. The light emitting method of each auxiliary lamp AHL is the same filament method as the halogen lamp HL described above. That is, the auxiliary lamp AHL is filled with an inert gas into which a small amount of halogen has been introduced into the U-shaped glass tube, and is equipped with a U-shaped filament.

Eight auxiliary lamps AHL are arranged at four corners of a rectangular light source area formed by 40 halogen lamps HL. The eight auxiliary lamps AHL are individually controlled by the control unit 3 to output. As shown in FIG. 8, each auxiliary lamp AHL is arranged so that the front end portion faces the four corners of the semiconductor wafer W. With this, each auxiliary lamp AHL can illuminate any one of the four corners of the semiconductor wafer W by lighting.

The control unit 3 controls the above-mentioned various operating mechanisms provided in the heat treatment apparatus 1. The configuration of the hardware as the control unit 3 is the same as that of a general computer. That is, the control unit 3 includes: a CPU (Central Processing Unit), a circuit that performs various arithmetic processing; a ROM (Read Only Memory; read-only memory), which reads the basic program of the memory Dedicated memory; RAM (Random Access Memory), which is a memory that can read and write various information freely; and magnetic disk, which is software or data for memory control in advance. The processing in the heat treatment apparatus 1 is performed by the CPU of the control unit 3 executing a predetermined processing program.

In addition to the above configuration, in order to prevent excessive temperature rise of the halogen heating unit 4, the flash heating unit 5, and the chamber 6 due to the heat energy generated from the halogen lamp HL and the flash lamp FL during the heat treatment of the semiconductor wafer, The heat treatment apparatus 1 also includes various cooling structures. For example, a water cooling tube (not shown) is provided in the wall system of the chamber 6. In addition, the halogen heating unit 4 and the flash heating unit 5 are formed in an air-cooled structure in which a gas flow is formed inside to exhaust heat. Also, air is supplied between the upper chamber window 63 and the light radiation window 53 to cool the flash heater 5 and the upper chamber window 63.

Next, the processing sequence of the semiconductor wafer W in the heat treatment apparatus 1 will be described. The semiconductor wafer W to be processed here refers to a semiconductor substrate to which impurities (ions) have been added by the ion implantation method. The activation of the impurities is performed by the flash irradiation heat treatment (annealing) of the heat treatment device 1. The processing sequence of the heat treatment apparatus 1 described below is performed by the control unit 3 controlling each operating mechanism of the heat treatment apparatus 1.

First, the gate valve 185 is opened to open the transport opening 66, and the semiconductor wafer W is transported into the heat treatment space 65 in the chamber 6 through the transport opening 66 by a transport robot outside the apparatus. The semiconductor wafer W carried in by the transfer robot is moved in and out to the position immediately above the holding portion 7 and stopped. Then, the pair of transfer arms 11 of the transfer mechanism 10 move horizontally from the retracted position to the transfer operation position and rise, whereby the lift pin 12 passes through the through hole 79 and protrudes from the upper surface of the holding plate 75 of the carrier 74 Receive semiconductor wafer W. At this time, the lift pin 12 rises above the upper end of the substrate support pin 77.

After the semiconductor wafer W is placed on the lift pin 12, the transfer robot exits from the heat treatment space 65, and the transfer opening 66 is closed by the gate valve 185. Then, by lowering the pair of transfer arms 11, the semiconductor wafer W can be transferred from the transfer mechanism 10 to the carrier 74 of the holding portion 7 and held from below in a horizontal posture. The semiconductor wafer W is supported and held by the carrier 74 by a plurality of substrate support pins 77 erected on the holding plate 75. In addition, the semiconductor wafer W is held by the holding portion 7 with the patterned surface and the surface implanted with impurities as the upper surface. A predetermined interval is formed between the back surface (main surface opposite to the surface) of the semiconductor wafer W supported by the plurality of substrate support pins 77 and the holding surface 75a of the holding plate 75. The pair of transfer arms 11 that have been lowered below the carrier 74 are retracted by the horizontal movement mechanism 13 to the retracted position, that is, to the inside of the recess 62.

In addition, after the conveyance opening 66 is closed by the gate valve 185 and the heat treatment space 65 is formed as a closed space, the atmosphere inside the chamber 6 is adjusted. Specifically, the valve 84 is opened, and the processing gas is supplied from the gas supply hole 81 to the heat treatment space 65. In this embodiment, nitrogen is supplied to the heat treatment space 65 in the chamber 6 as a processing gas. In addition, the valve 89 is opened and the gas inside the chamber 6 is discharged from the gas exhaust hole 86. As a result, the processing gas supplied from the upper portion of the heat treatment space 65 in the chamber 6 flows downward and is discharged from the lower portion of the heat treatment space 65, whereby the heat treatment space 65 can be replaced with a nitrogen atmosphere. Also, by opening the valve 192, the gas inside the chamber 6 can be discharged from the conveyance opening 66. Furthermore, the atmosphere around the driving part of the transfer mechanism 10 can also be exhausted by an exhaust mechanism that is not shown.

After the interior of the chamber 6 is replaced with a nitrogen atmosphere, and the semiconductor wafer W is held in a horizontal posture by the carrier 74 of the holding portion 7 from below, the 40 halogen lamps HL of the halogen heating portion 4 are all lit together and preparation is started Heating (assist heating). The halogen light emitted from the halogen lamp HL penetrates the lower chamber window 64 and the carrier 74 formed of quartz and is irradiated from the back surface of the semiconductor wafer W. By receiving light from the halogen lamp HL, the semiconductor wafer W can be preheated and the temperature can be increased. Furthermore, since the transfer arm 11 of the transfer mechanism 10 is retracted to the inside of the recess 62, there is no obstacle to heating due to the halogen lamp HL.

During the preliminary heating by the halogen lamp HL, the temperature of the semiconductor wafer W can be measured by the radiation thermometer 120. That is, the radiation thermometer 120 receives infrared light radiated through the opening 78 from the back surface of the semiconductor wafer W held on the carrier 74 and measures the temperature of the wafer that is rising. The measured temperature of the semiconductor wafer W is transmitted to the control unit 3. The control unit 3 controls the output of the halogen lamp HL while monitoring whether the temperature of the semiconductor wafer W heated by the light irradiation from the halogen lamp HL has reached a predetermined preliminary heating temperature T1. That is, the control unit 3 feedback-controls the output of the halogen lamp HL based on the measurement value measured by the radiation thermometer 120 so that the temperature of the semiconductor wafer W becomes the preliminary heating temperature T1. The preliminary heating temperature T1 is set to about 200°C to 800°C, preferably about 350°C to 600°C (600°C in this embodiment).

After the temperature of the semiconductor wafer W has reached the preliminary heating temperature T1, the control unit 3 temporarily maintains the semiconductor wafer W at the preliminary heating temperature T1. Specifically, when the temperature of the semiconductor wafer W measured by the radiation thermometer 120 has reached the preliminary heating temperature T1, the control unit 3 adjusts the output of the halogen lamp HL, and substantially maintains the temperature of the semiconductor wafer W at Prepare heating temperature T1.

However, all of the 40 halogen lamps HL of the halogen heating unit 4 are rod lamps. Then, the 40 halogen lamps HL include four segment lamps SHL in order to adjust the temperature at the four corners of the semiconductor wafer W. During the preliminary heating of the semiconductor wafer W by the halogen lamp HL, the temperature near the peripheral portion of the semiconductor wafer W tends to become a temperature different from the central portion, especially at the four corners of the semiconductor wafer W Easy to become uneven. Therefore, the four corners of the semiconductor wafer W can be irradiated with light from the segment lamp SHL to adjust the temperature of the four corners.

However, only the adjustment by the segment lamp SHL will leave the following problems. 9 is a plan view of the semiconductor wafer W during preliminary heating. As a result of using the adjustment made by the segment lamp SHL to improve the uniformity of the overall temperature distribution in the surface of the semiconductor wafer W, sometimes the temperature at only one of the four corners of the semiconductor wafer W becomes higher than The area is higher and becomes a hot spot. The reason for the difference in temperature at only one of the four corners of the semiconductor wafer W is that the structure of the chamber 6 is not necessarily symmetrical due to the existence of the transfer opening 66 and the like.

As shown in FIG. 9, a hot spot appears in the area C1 in one of the four corners of the semiconductor wafer W. In order to eliminate this hot spot, it is necessary to reduce the output of the segment lamp SHL that illuminates the area C1 with light. However, each segment lamp SHL irradiates two of the four corners of the semiconductor wafer W with light. If the output of the segment lamp SHL that irradiates the area C1 with light is reduced, the four corners of the semiconductor wafer W The illuminance of the area C2 or C3 will decrease and the temperature will also decrease. In this way, while eliminating the hot spot in the area C1, a cold spot may occur in the area C2 or the area C3. As a result, the uniformity of the in-plane temperature distribution of the entire semiconductor wafer W does not improve. In other words, it is difficult to individually adjust the temperature of only specific parts of the four corners of the semiconductor wafer W.

Therefore, it is necessary to individually adjust the illumination of each corner of the four corners of the semiconductor wafer W by the auxiliary lamp AHL. Since each auxiliary lamp AHL illuminates only one of the four corners of the semiconductor wafer W, the illumination of the four corners can be adjusted individually. For example, in the above example, if the output of the segment lamp SHL that irradiates the hot spot area C1 with light is reduced and the illuminance of the area C2 or area C3 is reduced, it can be changed from the area C2 or area C3 The auxiliary lamp AHL irradiates light to suppress the decrease in the illuminance of the area C2 or the area C3.

In this way, the temperature of each corner of the four corners of the semiconductor wafer W during preliminary heating can be adjusted individually and the temperature of the peripheral portion of the semiconductor wafer W including the four corners can be appropriately adjusted. As a result, the uniformity of the in-plane temperature distribution of the entire semiconductor wafer W can be improved.

When the temperature of the semiconductor wafer W reaches the preliminary heating temperature T1 and a predetermined time has elapsed, the flash lamp FL of the flash heater 5 flashes the surface of the semiconductor wafer W. At this time, part of the flash light radiated from the flash lamp FL directly faces the inside of the chamber 6, and the other part is temporarily reflected by the reflector 52 before facing the inside of the chamber 6, by the irradiation of such flash light The flash heating of the semiconductor wafer W is performed.

Since the flash heating is performed by flash irradiation from the flash lamp FL, the surface temperature of the semiconductor wafer W can be raised in a short time. That is, the flash light irradiated from the flash lamp FL refers to an extremely short and strong flash light in which the electrostatic energy accumulated in the capacitor in advance is converted into an extremely short light pulse, and the irradiation time is about 0.1 ms or more and 100 ms or less. Then, the surface temperature of the semiconductor wafer W flash-heated by the flash irradiation from the flash lamp FL instantaneously rises to the processing temperature T2 above 1000° C., and after the impurities implanted in the semiconductor wafer W are activated, The surface temperature will drop rapidly. In this way, since the surface temperature of the semiconductor wafer W can be raised and lowered in a very short time in the heat treatment apparatus 1, impurities can be carried out while suppressing the diffusion due to the heat of the impurities implanted in the semiconductor wafer W Of activation. Furthermore, the time required for the activation of the impurities is extremely short compared to the time required for the thermal diffusion of the impurities, so the activity can be completed even in a short period of time between 0.1 ms and 100 ms without diffusion. Change.

In the present embodiment, the temperature of each corner of the four corners of the semiconductor wafer W is individually adjusted by the auxiliary lamp AHL to make the in-plane temperature distribution of the semiconductor wafer W in the preliminary heating stage uniform. As a result, the in-plane temperature distribution on the surface of the semiconductor wafer W during flash irradiation can also be made uniform.

After the flash heating process ends, the halogen lamp HL will go out after a predetermined time. As a result, the semiconductor wafer W rapidly decreases in temperature from the preliminary heating temperature T1. The temperature of the semiconductor wafer W during the cooling is measured by the radiation thermometer 120, and the measurement result is transmitted to the control unit 3. The control unit 3 monitors whether the temperature of the semiconductor wafer W has fallen to a predetermined temperature based on the measurement result of the radiation thermometer 120. Then, after the temperature of the semiconductor wafer W drops below a predetermined level, the pair of transfer arms 11 of the transfer mechanism 10 will again move horizontally from the retreat position to the transfer operation position and rise, whereby the lift pin 12 will move from the carrier The upper surface of 74 protrudes and receives the heat-treated semiconductor wafer W from the carrier 74. Next, the transport opening 66 closed by the gate valve 185 is opened, and the semiconductor wafer W placed on the lift pin 12 is carried out by the transport robot outside the apparatus, and the semiconductor wafer W in the heat treatment apparatus 1 is completed Of heat treatment.

In the first embodiment, an auxiliary lamp AHL having a U shape is arranged at the four corners of the rectangular light source area formed by the halogen lamp HL, and the semiconductor lamp W is individually adjusted by the auxiliary lamp AHL. The temperature of every corner of the corner. Thereby, the temperature of the peripheral portion of the semiconductor wafer W including the four corners of the semiconductor wafer W can be appropriately adjusted during the preliminary heating by the halogen lamp HL, and the surface of the semiconductor wafer W during the preliminary heating can be adjusted The internal temperature distribution is uniform. As a result, the in-plane temperature distribution of the surface of the semiconductor wafer W during flash heating can also be made uniform.

Furthermore, even if the auxiliary lamp AHL is provided, the segment lamp SHL can be considered unnecessary, but the rated output of the U-shaped auxiliary lamp AHL has to be lower than that of the rod-shaped segment lamp SHL. Therefore, in a configuration in which the segment lamp SHL is not provided and only the auxiliary lamp AHL is arranged, there is a possibility that the four corners of the semiconductor wafer W may not be sufficiently heated and cold spots may occur in the four corners. Therefore, it is preferable to configure the segment lamp SHL in addition to the auxiliary lamp AHL to compensate for the insufficient output of the U-shaped auxiliary lamp AHL.

<Second Embodiment>

Next, the second embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus 1 of the second embodiment is approximately the same as that of the first embodiment. In addition, the processing procedure of the semiconductor wafer W in the heat treatment apparatus 1 of the second embodiment is also the same as that of the first embodiment. The second embodiment differs from the first embodiment in the shape of the auxiliary lamp AHL.

10 is a schematic diagram showing the shape of the auxiliary lamp AHL of the second embodiment. In the same figure, the same symbols as in FIG. 8 are attached to the same elements as in the first embodiment. In the second embodiment, four auxiliary lamps AHL are provided. Then, as shown in FIG. 10, the auxiliary lamp AHL of the second embodiment has the U-shaped front end portion formed along the edge of the semiconductor wafer W held by the holding portion 7. The configuration of the second embodiment other than the shape of the auxiliary lamp AHL is the same as that of the first embodiment.

Even in the second embodiment, the auxiliary lamps AHL are arranged at the four corners of the rectangular light source area formed by the halogen lamp HL, and the four corners of the semiconductor wafer W are individually adjusted by the auxiliary lamps AHL The temperature in every corner of the house. Therefore, as in the first embodiment, during the preliminary heating by the halogen lamp HL, the temperature of the peripheral portion of the semiconductor wafer W including the four corners of the semiconductor wafer W can be appropriately adjusted, and the preliminary heating can be performed The temperature distribution in the surface of the semiconductor wafer W is uniform.

Furthermore, in the second embodiment, since a part of the auxiliary lamp AHL is formed along the shape of the edge of the semiconductor wafer W held by the holding portion 7, it is particularly suitable for adjusting the edge of the semiconductor wafer W temperature.

<Third Embodiment>

Next, the third embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus 1 of the third embodiment is approximately the same as that of the first embodiment. In addition, the processing procedure of the semiconductor wafer W in the heat treatment apparatus 1 of the third embodiment is also the same as that of the first embodiment. The third embodiment differs from the first embodiment in the shape of the auxiliary lamp AHL.

11 is a schematic diagram showing the shape of the auxiliary lamp AHL of the third embodiment. In the same figure, the same symbols as in FIG. 8 are attached to the same elements as in the first embodiment. As shown in FIG. 11, the auxiliary lamp AHL of the third embodiment refers to a rod lamp having a rod shape. The external shape of the auxiliary lamp AHL of the third embodiment is the same as the segment lamp SHL and the halogen lamp HL. That is, the auxiliary lamp AHL of the third embodiment is a glass tube of the same length and thickness as the segment lamp SHL and the halogen lamp HL, in which an inert gas in which a trace amount of halogen is introduced is enclosed, and a linear filament is provided. However, in the auxiliary lamp AHL of the third embodiment, the filament is arranged at a position on one side of the center in the longitudinal direction.

In the third embodiment, four auxiliary lamps AHL are provided. Each auxiliary lamp AHL is arranged such that its filament portion is located at the four corners of the rectangular light source area formed by the halogen lamp HL, that is, the filament portion is arranged to face the four corners of the semiconductor wafer W. With this, each auxiliary lamp AHL can illuminate any one of the four corners of the semiconductor wafer W by lighting.

Even in the third embodiment, the auxiliary lamps AHL are arranged at the four corners of the rectangular light source area formed by the halogen lamp HL, and the four corners of the semiconductor wafer W are individually adjusted by the auxiliary lamps AHL The temperature in every corner of the house. Therefore, as in the first embodiment, during the preliminary heating by the halogen lamp HL, the temperature of the peripheral portion of the semiconductor wafer W including the four corners of the semiconductor wafer W can be appropriately adjusted, and the preliminary heating can be performed The temperature distribution in the surface of the semiconductor wafer W is uniform.

<variation example>

Although the embodiments of the present invention have been described above, the present invention is capable of various modifications other than those described above as long as it does not deviate from the scope of the gist of the present invention. For example, the shapes of the auxiliary lamps AHL disposed at the four corners of the rectangular light source area formed by the halogen lamp HL are not limited to the first to third embodiments, but may be formed into appropriate shapes. For example, the auxiliary lamp AHL may also be a point light source lamp. In addition, the auxiliary lamp AHL of the third embodiment may be a rod lamp having a full length corresponding to the length of the filament.

In addition, in the above-mentioned embodiment, although the flash heating unit 5 is provided with 30 flash lamps FL, it is not limited to this, and the number system of the flash lamps FL may be any number. In addition, the flash FL is not limited to the xenon flash, but may be a krypton flash lamp. In addition, the number of halogen lamps HL included in the halogen heating unit 4 is not limited to 40, and any number may be used as long as the plurality of grids are arranged in a grid pattern on the upper and lower layers.

In addition, the substrate to be processed by the heat treatment device of the present invention is not limited to a semiconductor wafer, and may be a glass substrate used in a flat panel display such as a liquid crystal display device or a substrate for a solar cell. In addition, the technology of the present invention can also be applied to heat treatment of a high dielectric constant gate insulating film (High-k film), bonding of metal to silicon, or crystallization of polysilicon.

In addition, the heat treatment technology of the present invention is not limited to the flash lamp annealing device, but can also be applied to heat sources other than the flash lamp such as a single-chip lamp annealing device using a halogen lamp or a CVD (chemical vapor deposition) device In the device. In particular, the technology of the present invention can be preferably applied to a backside annealing device in which a halogen lamp is arranged below the chamber and light is irradiated from the back surface of the semiconductor wafer for heat treatment.

AHL‧‧‧Auxiliary light

HL‧‧‧halogen lamp

SHL‧‧‧fragment lamp

W‧‧‧Semiconductor wafer

Claims (6)

A heat treatment device that heats a substrate by irradiating the substrate with light, and includes: a chamber for receiving the substrate; a holding portion for holding the substrate in the chamber; and a light irradiation portion arranged in a rectangular light source area There are a plurality of rod-shaped lamps in two layers in a lattice shape, the rectangular light source area includes an area facing the main surface of the substrate held by the holding portion; and the auxiliary lamp is arranged in the rectangular light source area Four corners. The heat treatment device according to claim 1, wherein the auxiliary lamp has a U-shape. The heat treatment device according to claim 2, wherein a part of the auxiliary lamp is formed along the edge of the substrate held by the holding part. The heat treatment device according to claim 1, wherein the auxiliary lamp has a rod shape. The heat treatment device according to claim 4, wherein the auxiliary lamp has the same length as the plurality of rod-shaped lamps, and is provided with a filament at a position closer to one side than the center in the longitudinal direction. The heat treatment device according to any one of claims 1 to 5, wherein the plurality of rod-shaped lamps include lamps provided with filaments at both ends across the center portion in the longitudinal direction.

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