TWI681945B - Amine-based compound and organic light-emitting diode including the same - Google Patents
Amine-based compound and organic light-emitting diode including the same Download PDFInfo
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- 0 C*C1C(C)=NC(N)=C(C*)C1* Chemical compound C*C1C(C)=NC(N)=C(C*)C1* 0.000 description 15
- SIRMBQIBSBMNGM-UHFFFAOYSA-N C(C1C23c(cc(cc4)N(c(cc5)ccc5-c5ccccc5)c(cc5)ccc5-c(cc5)cc(c6ccccc66)c5[n]6-c5ccccc5)c4-c4c2cccc4)=CC=CC1c1c3cccc1 Chemical compound C(C1C23c(cc(cc4)N(c(cc5)ccc5-c5ccccc5)c(cc5)ccc5-c(cc5)cc(c6ccccc66)c5[n]6-c5ccccc5)c4-c4c2cccc4)=CC=CC1c1c3cccc1 SIRMBQIBSBMNGM-UHFFFAOYSA-N 0.000 description 1
- DSXBNKUWNSKZRO-UHFFFAOYSA-N CC(C1)C=Cc2c1c(-c(c(O)c(c(O)c1O)O)c1O)c(cccc1)c1c2-c(cc1)ccc1-c1cc(cccc2)c2cc1 Chemical compound CC(C1)C=Cc2c1c(-c(c(O)c(c(O)c1O)O)c1O)c(cccc1)c1c2-c(cc1)ccc1-c1cc(cccc2)c2cc1 DSXBNKUWNSKZRO-UHFFFAOYSA-N 0.000 description 1
- JMECGNBRZXOPHY-RHGSLLQMSA-N C[C@@H](C=CC=C1[n]2c3ccccc3c3c2cccc3)/C1=C/[n]1c(C=CCC2)c2c2ccccc12 Chemical compound C[C@@H](C=CC=C1[n]2c3ccccc3c3c2cccc3)/C1=C/[n]1c(C=CCC2)c2c2ccccc12 JMECGNBRZXOPHY-RHGSLLQMSA-N 0.000 description 1
- WRIXDDWMMDDEMT-UHFFFAOYSA-N N#Cc(c1c2cccc1)ccc2N(c(cc1)cc(c2c3)c1[s]c2ccc3-c1c(cccc2)c2c(-c2c(cccc3)c3ccc2)c2c1cccc2)c1ccccn1 Chemical compound N#Cc(c1c2cccc1)ccc2N(c(cc1)cc(c2c3)c1[s]c2ccc3-c1c(cccc2)c2c(-c2c(cccc3)c3ccc2)c2c1cccc2)c1ccccn1 WRIXDDWMMDDEMT-UHFFFAOYSA-N 0.000 description 1
- FANGPNMLBJCICE-UHFFFAOYSA-N N#Cc(cc1)ccc1-c(cc1)ccc1N(C(CC1)=Cc(c2c3)c1[o]c2ccc3-c1c(cccc2)c2c(-c2c(cccc3)c3ccc2)c2c1cccc2)c1ccccn1 Chemical compound N#Cc(cc1)ccc1-c(cc1)ccc1N(C(CC1)=Cc(c2c3)c1[o]c2ccc3-c1c(cccc2)c2c(-c2c(cccc3)c3ccc2)c2c1cccc2)c1ccccn1 FANGPNMLBJCICE-UHFFFAOYSA-N 0.000 description 1
- XHHSAOLUBAXUSQ-UHFFFAOYSA-N N#Cc(cc1)ccc1N(c(cc1)cc(c2cc(-c3c(cccc4)c4c(-c4c(cccc5)c5ccc4)c4c3cccc4)ccc22)c1[n]2-c1ccccc1)c1cccc2c1cccc2 Chemical compound N#Cc(cc1)ccc1N(c(cc1)cc(c2cc(-c3c(cccc4)c4c(-c4c(cccc5)c5ccc4)c4c3cccc4)ccc22)c1[n]2-c1ccccc1)c1cccc2c1cccc2 XHHSAOLUBAXUSQ-UHFFFAOYSA-N 0.000 description 1
- NMSWDFJJKYRKCD-UHFFFAOYSA-N N#Cc(cc1)ccc1N(c(cc1)cc2c1c(ccc(-c1c(cccc3)c3c(-c3cccc4c3cccc4)c3c1cccc3)c1)c1[s]2)c1c(CCC=C2)c2ccc1 Chemical compound N#Cc(cc1)ccc1N(c(cc1)cc2c1c(ccc(-c1c(cccc3)c3c(-c3cccc4c3cccc4)c3c1cccc3)c1)c1[s]2)c1c(CCC=C2)c2ccc1 NMSWDFJJKYRKCD-UHFFFAOYSA-N 0.000 description 1
- VNUIMPIXLBFVIC-UHFFFAOYSA-N N#Cc(cc1)ccc1N(c(cc1)ccc1-c(cc1)ccc1-c1c(cccc2)c2c(-c2c(cccc3)c3ccc2)c2c1cccc2)c(cc1)ccc1F Chemical compound N#Cc(cc1)ccc1N(c(cc1)ccc1-c(cc1)ccc1-c1c(cccc2)c2c(-c2c(cccc3)c3ccc2)c2c1cccc2)c(cc1)ccc1F VNUIMPIXLBFVIC-UHFFFAOYSA-N 0.000 description 1
- LKNRCKRHCLQDRW-UHFFFAOYSA-N N#Cc(cc1)ccc1N(c(cc1)ccc1-c(cc1)ccc1-c1c(cccc2)c2c(-c2cccc3c2cccc3)c2c1cccc2)c(cc1)ccc1-c1cnccc1 Chemical compound N#Cc(cc1)ccc1N(c(cc1)ccc1-c(cc1)ccc1-c1c(cccc2)c2c(-c2cccc3c2cccc3)c2c1cccc2)c(cc1)ccc1-c1cnccc1 LKNRCKRHCLQDRW-UHFFFAOYSA-N 0.000 description 1
- BALTXYKMEWOSGA-UHFFFAOYSA-N N#Cc(cc1)ccc1N(c(cc1)ccc1-c1ccccc1)c(cc1)cc(c2cc(-c3c(cccc4)c4c(-c4c(cccc5)c5ccc4)c4c3cccc4)ccc22)c1[n]2-c1ccccc1 Chemical compound N#Cc(cc1)ccc1N(c(cc1)ccc1-c1ccccc1)c(cc1)cc(c2cc(-c3c(cccc4)c4c(-c4c(cccc5)c5ccc4)c4c3cccc4)ccc22)c1[n]2-c1ccccc1 BALTXYKMEWOSGA-UHFFFAOYSA-N 0.000 description 1
- DCHXBAUOJGIQEA-UHFFFAOYSA-N N#Cc(cc1)ccc1N(c(cc1)ccc1-c1ccccn1)c(cc1)cc(ccc2c3)c1c2ccc3-c1c(cccc2)c2c(-c2cccc3c2cccc3)c2c1cccc2 Chemical compound N#Cc(cc1)ccc1N(c(cc1)ccc1-c1ccccn1)c(cc1)cc(ccc2c3)c1c2ccc3-c1c(cccc2)c2c(-c2cccc3c2cccc3)c2c1cccc2 DCHXBAUOJGIQEA-UHFFFAOYSA-N 0.000 description 1
- RGLDRMLKRAUHAY-UHFFFAOYSA-N N#Cc(cc1)ccc1N(c(cc1)ccc1-c1cnccc1)c(cc1)cc2c1c(ccc(-c1c(cccc3)c3c(-c3cccc4ccccc34)c3c1cccc3)c1)c1[s]2 Chemical compound N#Cc(cc1)ccc1N(c(cc1)ccc1-c1cnccc1)c(cc1)cc2c1c(ccc(-c1c(cccc3)c3c(-c3cccc4ccccc34)c3c1cccc3)c1)c1[s]2 RGLDRMLKRAUHAY-UHFFFAOYSA-N 0.000 description 1
- ANYWUPPBKFTIDT-UHFFFAOYSA-N Oc(c(O)c1O)c(-c2c(cccc3)c3c(-c(cc3)ccc3-c3c(cccc4)c4ccc3)c3c2cccc3)c(O)c1O Chemical compound Oc(c(O)c1O)c(-c2c(cccc3)c3c(-c(cc3)ccc3-c3c(cccc4)c4ccc3)c3c2cccc3)c(O)c1O ANYWUPPBKFTIDT-UHFFFAOYSA-N 0.000 description 1
- WXYMIJYOEZWXPW-UHFFFAOYSA-N c(cc1)ccc1-c(cc1)ccc1-[n](c(c(c1c2)c3)ccc3-c3c(cccc4)c4c(-c4cccc5c4cccc5)c4c3cccc4)c1ccc2N(c(cc1)ccc1-c1cnccc1)c1cccc2c1cccc2 Chemical compound c(cc1)ccc1-c(cc1)ccc1-[n](c(c(c1c2)c3)ccc3-c3c(cccc4)c4c(-c4cccc5c4cccc5)c4c3cccc4)c1ccc2N(c(cc1)ccc1-c1cnccc1)c1cccc2c1cccc2 WXYMIJYOEZWXPW-UHFFFAOYSA-N 0.000 description 1
- SGMJYDRFETVMKI-UHFFFAOYSA-N c1ccc2c(-c3c(cccc4)c4c(-c(cc4)cc5c4c(ccc(N(c(cc4)ccc4-c4cnccc4)c4cccc6c4cccc6)c4)c4[o]5)c4c3cccc4)cccc2c1 Chemical compound c1ccc2c(-c3c(cccc4)c4c(-c(cc4)cc5c4c(ccc(N(c(cc4)ccc4-c4cnccc4)c4cccc6c4cccc6)c4)c4[o]5)c4c3cccc4)cccc2c1 SGMJYDRFETVMKI-UHFFFAOYSA-N 0.000 description 1
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
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- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
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Abstract
Description
相關申請案之交互參照 Cross-reference of related applications
本申請案主張2012年2月07日向韓國智慧財產局提出之案號為10-2012-0012532及2012年6月08日向韓國智慧財產局提出之案號為10-2012-0061676之韓國申請案之權益,其全部內容藉參照整合於此。 This application claims that the Korean application filed on February 07, 2012 with the Korean Intellectual Property Agency was 10-2012-0012532 and the Korean application filed with the Korean Intellectual Property Agency on June 08, 2012 was 10-2012-0061676. The entire contents of equity are incorporated here by reference.
本實施例係關於一種用於有機發光二極體之化合物及包含該化合物之有機發光二極體。 This embodiment relates to a compound for an organic light-emitting diode and an organic light-emitting diode including the compound.
有機發光二極體(OLEDs)為具有例如廣視角、良好對比、反應快速、高亮度、良好驅動電壓之優點之自發光二極體,且可提供彩色影像。 Organic light emitting diodes (OLEDs) are self-emitting diodes that have the advantages of, for example, wide viewing angle, good contrast, fast response, high brightness, and good driving voltage, and can provide color images.
傳統的有機發光二極體包含具有基板之結構,且陽極、電洞傳輸層(HTL)、發光層(EML)、電子傳輸層(ETL)及陰極依序堆疊於基板上。關於此點,電洞傳輸層、發光層及電子傳輸層為包含有機化合物之有機薄膜。 The conventional organic light emitting diode includes a structure having a substrate, and an anode, a hole transport layer (HTL), a light emitting layer (EML), an electron transport layer (ETL), and a cathode are sequentially stacked on the substrate. In this regard, the hole transport layer, the light emitting layer, and the electron transport layer are organic thin films containing organic compounds.
具有上述結構之有機發光二極體之操作原則如下。 The operating principle of the organic light emitting diode with the above structure is as follows.
當電壓施加於陽極與陰極間時,自陽極注入之電洞經由電洞傳輸層移至發光層,而自陰極注入之電子經由電子傳輸層移至發光層。電洞與電子於發光層中再結合以產生激子。當激子自激發態落回基態時發出光線。 When a voltage is applied between the anode and the cathode, holes injected from the anode move to the light emitting layer through the hole transport layer, and electrons injected from the cathode move to the light emitting layer through the electron transport layer. The holes and electrons recombine in the light-emitting layer to generate excitons. The excitons emit light when they fall back from the excited state to the ground state.
本發明實施例提供一種具有新型結構之胺系化合物,及包含該胺系化合物之有機發光二極體。 Embodiments of the present invention provide an amine compound having a novel structure, and an organic light-emitting diode including the amine compound.
根據本發明之一態樣提供由以下化學式1表示之胺系化合物:
其中,於化學式1中,Ar1與Ar2各獨立地為經取代或未經取代之C6-C60芳基或經取代或未經取代之C2-C60雜芳基;X1為經取代或未經取代之C6-C60伸芳基或經取代或未經取代之C2-C60伸雜芳基;m為1至5之整數;且各經取代之C6-C60芳基、經取代之C2-C60雜芳基、經取代之C6-C60伸芳基與經取代之C2-C60伸雜芳基的至少一取代基為氘原子;-F;-Cl;-Br;-I;-CN;羥基;-NO2;氨基;甲脒 基;胼;腙;羧基或其鹽;磺酸基或其鹽;磷酸基或其鹽;三(C6-C60芳基)矽烷基;C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽或磷酸基或其鹽的至少之一取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、及C2-C60炔基;C3-C60環烷基、C3-C60環烯基、C6-C60芳基、C2-C60雜芳基、C6-C60芳烷基、C6-C60芳氧基、C6-C60芳硫基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、經至少一個氟(F)取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基與C2-C60雜芳基的至少之一取代之C3-C60環烷基、C3-C60環烯基、C6-C60芳基、C2-C60雜芳基、C6-C60芳烷基、C6-C60芳氧基及C6-C60芳硫基的其中之一, Among them, in Chemical Formula 1, Ar 1 and Ar 2 are each independently a substituted or unsubstituted C 6 -C 60 aryl group or a substituted or unsubstituted C 2 -C 60 heteroaryl group; X 1 is Substituted or unsubstituted C 6 -C 60 arylene group or substituted or unsubstituted C 2 -C 60 arylene group; m is an integer from 1 to 5; and each substituted C 6 -C At least one substituent of 60 aryl, substituted C 2 -C 60 heteroaryl, substituted C 6 -C 60 aryl aryl and substituted C 2 -C 60 aryl aryl is a deuterium atom;- F; -Cl; -Br; -I; -CN; hydroxyl; -NO 2 ; amino; formamidine; hydrazine; hydrazone; carboxyl or its salt; sulfonic acid or its salt; phosphate or its salt; tri( C 6 -C 60 aryl) silane group; C 1 -C 60 alkyl group, C 1 -C 60 alkoxy group, C 2 -C 60 alkenyl group, C 2 -C 60 alkynyl group; via deuterium atom, -F , -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, carboxamidine, hydrazone, hydrazone, carboxyl group or its salt, sulfonic acid group or its salt, or at least one of phosphate group or its salt Substituted C 1 -C 60 alkyl, C 1 -C 60 alkoxy, C 2 -C 60 alkenyl, and C 2 -C 60 alkynyl; C 3 -C 60 cycloalkyl, C 3 -C 60 Cycloalkenyl, C 6 -C 60 aryl, C 2 -C 60 heteroaryl, C 6 -C 60 aralkyl, C 6 -C 60 aryloxy, C 6 -C 60 arylthio; deuterium Atom, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, formamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt, phosphate group or its salt , C 1 -C 60 alkyl, with at least one fluorine (F) of the substituted C 1 -C 60 alkyl, C 1 -C 60 alkoxy, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl group at least one of substituents C C 6 -C 60 aryl group and C 2 -C 60 heteroaryl group 3 -C 60 cycloalkyl, C 3 -C 60 cycloalkenyl, C 6 -C 60 aryl, C One of 2 -C 60 heteroaryl, C 6 -C 60 aralkyl, C 6 -C 60 aryloxy and C 6 -C 60 arylthio,
其中Ar1與Ar2的至少之一為經選自由-F;-CN;-NO2;經至少一個-F取代之C1-C60烷基;C2-C60雜芳基;及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、經至少一個-F取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基與C2-C60雜芳基的至少之一取代之C2-C60雜芳基組成之群組的至少一拉電子基取代之C6-C60芳基。 Wherein at least one of Ar 1 and Ar 2 is selected from -F; -CN; -NO 2 ; C 1 -C 60 alkyl substituted with at least one -F; C 2 -C 60 heteroaryl; and Deuterium atom, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, formamidine, hydrazine, hydrazone, carboxyl group or its salt, sulfonic acid group or its salt, phosphate group or its salts, C 1 -C 60 alkyl, -F substituted with at least one of C 1 -C 60 alkyl, C 1 -C 60 alkoxy, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl group, C 6 -C 60 aryl group and C 2 -C 60 heteroaryl groups substituted with at least one of C 2 -C 60 heteroaryl group consisting of at least one electron withdrawing substituent of C 6 -C 60 aryl group.
根據本發明之另一態樣,提供有機發光二極體包含第一電極、相對於第一電極設置之第二電極、及設置於第一電極與第二電極間之有機層,該有機層包含至少一種胺系化合物。 According to another aspect of the present invention, there is provided an organic light emitting diode including a first electrode, a second electrode disposed opposite to the first electrode, and an organic layer disposed between the first electrode and the second electrode, the organic layer includes At least one amine compound.
10‧‧‧有機發光二極體 10‧‧‧ organic light emitting diode
11‧‧‧基板 11‧‧‧ substrate
13‧‧‧第一電極 13‧‧‧First electrode
15‧‧‧有機層 15‧‧‧ Organic layer
17‧‧‧第二電極 17‧‧‧Second electrode
藉參照附圖詳細描述例示性實施例,本發明之以上及其他特徵及優點將變得顯而易知,其中: 第1圖為描繪根據一實施例之有機發光二極體的結構之示意圖。 By describing the exemplary embodiments in detail with reference to the accompanying drawings, the above and other features and advantages of the present invention will become apparent and easy to understand, among which: FIG. 1 is a schematic diagram illustrating the structure of an organic light emitting diode according to an embodiment.
如用於本文中,用詞「和/或」包含一或多個相關表列元件之任何或全部組合。當例如「至少之一」之表述詞前綴於一列元件時,係修飾整列元件而非修飾該列中之個別元件。 As used herein, the term "and/or" includes any or all combinations of one or more related listed elements. When an expression such as "at least one" is prefixed to a row of elements, it modifies the entire row of elements rather than the individual elements in that row.
根據本發明之一態樣,提供由化學式1表示之胺系化合物:
於化學式1中,Ar1與Ar2各獨立地為經取代或未經取代之C6-C60芳基或經取代或未經取代之C2-C60雜芳基;且X1為經取代或未經取代之C6-C60伸芳基或經取代或未經取代之C2-C60伸雜芳基,且m為1至5之整數。 In Chemical Formula 1, Ar 1 and Ar 2 are each independently substituted or unsubstituted C 6 -C 60 aryl or substituted or unsubstituted C 2 -C 60 heteroaryl; and X 1 is A substituted or unsubstituted C 6 -C 60 arylene group or a substituted or unsubstituted C 2 -C 60 arylene group, and m is an integer of 1 to 5.
各經取代之C6-C60芳基、經取代之C2-C60雜芳基、經取代之C6-C60伸芳基與經取代之C2-C60伸雜芳基的至少一取代基可為 氘原子;-F;-Cl;-Br;-I;-CN;羥基;-NO2;氨基;甲脒基;胼;腙;羧基或其鹽;磺酸基或其鹽;磷酸基或其鹽;三(C6-C60芳基)矽烷基;C1-C60烷基、C1-C60烷氧基、C2-C60烯基與C2-C60炔基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽或磷酸基或其鹽的至少之一取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基與C2-C60炔基;C3-C60環烷基、C3-C60環烯基、C6-C60芳基、C2-C60雜芳基、C6-C60芳烷基、C6-C60芳氧基、C6-C60芳硫基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、經至少一個氟(F)取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基與C2-C60雜芳基的至少之一取代之C3-C60環烷基、C3-C60環烯基、C6-C60芳基、C2-C60雜芳基、C6-C60芳烷基、C6-C60芳氧基與C6-C60芳硫基的其中之一。 At least at least one of each substituted C 6 -C 60 aryl group, substituted C 2 -C 60 heteroaryl group, substituted C 6 -C 60 aryl group and substituted C 2 -C 60 aryl group A substituent may be a deuterium atom; -F; -Cl; -Br; -I; -CN; hydroxyl; -NO 2 ; amino; carboxamidine; hydrazine; hydrazone; carboxyl or its salt; sulfonic acid or its salt ; Phosphoric acid group or its salt; tri(C 6 -C 60 aryl) silane group; C 1 -C 60 alkyl group, C 1 -C 60 alkoxy group, C 2 -C 60 alkenyl group and C 2 -C 60 Alkynyl; via deuterium atom, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, carboxamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt or C 1 -C 60 alkyl group, C 1 -C 60 alkoxy group, C 2 -C 60 alkenyl group and C 2 -C 60 alkynyl group substituted with at least one of a phosphate group or a salt thereof; C 3 -C 60 ring Alkyl, C 3 -C 60 cycloalkenyl, C 6 -C 60 aryl, C 2 -C 60 heteroaryl, C 6 -C 60 aralkyl, C 6 -C 60 aryloxy, C 6- C 60 arylthio; via deuterium atom, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, carboxamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonate or a salt thereof, a phosphoric acid group or a salt thereof, C 1 -C 60 alkyl, substituted by at least one of fluorine (F) C 1 -C 60 alkyl, C 1 -C 60 alkoxy, C 2 -C 60 alkenyl, , C 2 -C 60 alkynyl, C 6 -C 60 aryl and C 2 -C 60 heteroaryl substituted with at least one C 3 -C 60 cycloalkyl, C 3 -C 60 cycloalkenyl, C One of 6 -C 60 aryl, C 2 -C 60 heteroaryl, C 6 -C 60 aralkyl, C 6 -C 60 aryloxy, and C 6 -C 60 arylthio.
於以上化學式1中,Ar1與Ar2的至少之一為經選自由-F;-CN;-NO2;經至少一個-F取代之C1-C60烷基;C2-C60雜芳基;及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、經至少一個-F取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基與C2-C60雜芳基的至少之一取代之C2-C60雜芳基組成之群組的至少一拉電子基取代之C6-C60芳基。 In the above Chemical Formula 1, at least one of Ar 1 and Ar 2 is selected from -F; -CN; -NO 2 ; C 1 -C 60 alkyl substituted with at least one -F; C 2 -C 60 hetero Aryl; and via deuterium atom, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, carboxamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt , a phosphoric acid group or a salt thereof, C 1 -C 60 alkyl, -F substituted with at least one of C 1 -C 60 alkyl, C 1 -C 60 alkoxy, C 2 -C 60 alkenyl, C 2 - C 6 -C 60 alkynyl, C 6 -C 60 aryl and C 2 -C 60 heteroaryl substituted with at least one C 2 -C 60 heteroaryl group consisting of at least one electron-withdrawing group substituted C 6- C 60 aryl.
舉例而言,至少一拉電子基可選自由:-F;-CN;-NO2;經至少一個-F取代之C1-C20烷基;包含環形成N原子(ring-forming N atom)之C2-C20雜芳基;及包含環形成N原子並經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之 C1-C20烷基、C1-C20烷氧基、C6-C20芳基與C2-C20雜芳基的至少之一取代之C2-C20雜芳基所組成之群組。 For example, at least one electron-withdrawing group may be selected from: -F; -CN; -NO 2 ; C 1 -C 20 alkyl substituted with at least one -F; including ring-forming N atom (ring-forming N atom) C 2 -C 20 heteroaryl group; and containing ring forming N atom and deuterium atom, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, formamidinyl, hydrazine, hydrazone, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, C 1 -C 20 alkyl, -F substituted with at least one of C 1 -C 20 alkyl, C 1 -C 20 alkoxy the group consisting of the group, at least one C 6 -C 20 aryl and C 2 -C 20 heteroaryl group substituted with aryl of C 2 -C 20 heteroaryl group.
於一些實施例中,化學式1中之至少一拉電子基可選自由-F;-CN;經至少一個-F取代之C1-C20烷基;吡咯基(pyrrolyl group)、吡唑基(pyrazolyl group)、咪唑基(imidazolyl group)、咪唑啉基(imidazolinyl group)、咪唑吡啶基(imidazopyridinyl group)、咪唑嘧啶基(imidazopyrimidinyl group)、吡啶基(pyridinyl group)、吡嗪基(pyrazinyl group)、嘧啶基(pyrimidinyl group)、苯並咪唑基(benzoimidazolyl group)、吲哚基(indolyl group)、嘌呤基(purinyl group)、喹啉基(quinolinyl group)、異喹啉基(isoquinolinyl group)、酞嗪基(phthalazinyl group)、吲哚嗪基(indolizinyl group)、喹唑啉基(quinazolinyl group)、噌啉基(cirnnolinyl group)、吲唑基(indazolyl group)、咔唑基(carbazolyl group)、吩嗪基(phenazinyl group)、菲啶基(phenanthridinyl group)、三嗪基(triazinyl group)、噠嗪基(pyridazinyl group)、三唑基(triazolyl group)及四唑基(tetrazolyl group)及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基(phenanthrenyl group)、芘基(pyrenyl group)、吡啶基、三嗪基與咔唑基的至少之一取代之吡咯基、吡唑基、咪唑基、咪唑啉基、咪唑吡啶基、咪唑嘧啶基、吡啶基、吡嗪基、嘧啶基、苯並咪唑基、吲哚基、嘌呤基、喹啉基、異喹啉基、呔嗪基、吲哚嗪基、喹唑啉基、噌啉基、吲唑基、咔唑基、吩嗪基、菲啶基、三嗪基、噠嗪基、三唑基及四唑基組成之群組。 In some embodiments, at least one electron withdrawing group in Chemical Formula 1 may be selected from -F; -CN; C 1 -C 20 alkyl substituted with at least one -F; pyrrolyl (pyrrolyl group), pyrazolyl ( pyrazolyl group), imidazolyl group, imidazolinyl group, imidazopyridinyl group, imidazopyrimidinyl group, pyridinyl group, pyrazinyl group, Pyrimidinyl group, benzoimidazolyl group, indolyl group, purinyl group, quinolinyl group, isoquinolinyl group, phthalazine Phthalazinyl group, indolizinyl group, quinazolinyl group, quinazolinyl group, cirnnolinyl group, indazolyl group, carbazolyl group, phenazine Phenazinyl group, phenanthridinyl group, triazinyl group, pyridazinyl group, triazolyl group and tetrazolyl group and deuterated atoms, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, carboxamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt, phosphoric acid or its salt, C 1 -C 20 alkyl, C 1 -C 20 alkyl substituted with at least one -F, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthrenyl group, pyrenyl ( pyrenyl group), pyridyl, triazinyl and carbazolyl substituted pyrrolyl, pyrazolyl, imidazolyl, imidazolinyl, imidazolidinyl, imidazolylpyrimidinyl, pyridinyl, pyrazinyl, pyrimidine Group, benzimidazolyl, indolyl, purinyl, quinolinyl, isoquinolinyl, pyrazinyl, indolizinyl, quinazolinyl, cinnolinyl, indazolyl, carbazolyl, phen The group consisting of aziridinyl, phenanthridinyl, triazinyl, pyridazinyl, triazolyl and tetrazolyl.
舉例而言,化學式1中之至少一拉電子基可選自由:F; -CN;經至少一個-F取代之C1-C20烷基;吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基;及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基組成之群組,但不限於此。 For example, at least one electron withdrawing group in Chemical Formula 1 may be selected from: F; -CN; C 1 -C 20 alkyl substituted with at least one -F; pyridyl, pyrazinyl, pyrimidinyl, quinolinyl , Isoquinolinyl, quinazolinyl, triazinyl, benzimidazolyl; and deuterium atoms, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, formamidine group, corpus, hydrazone, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, C 1 -C 20 alkyl, -F substituted with at least one of C 1 -C 20 alkyl, C 1 - C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthrenyl, pyrenyl, pyridyl, triazinyl and carbazolyl substituted pyridyl, pyrazinyl, pyrimidinyl, quinolinyl , Isoquinolinyl, quinazolinyl, triazinyl, benzimidazolyl and carbazolyl, but not limited to this group.
於一些實施例中,以上化學式1中之至少一拉電子基可選自由-F;-CN;-CH2F;-CHF2;-CF3;與由以下化學式2(1)至化學式2(14)表示之基團所組成之群組:
於以上化學式2(1)至化學式2(14)中,Z11至Z18可各獨立地為氫原子、氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基或咔唑基。 In the above Chemical Formula 2(1) to Chemical Formula 2(14), Z 11 to Z 18 may each independently be a hydrogen atom, a deuterium atom, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2. Amino, formamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt, phosphoric acid or its salt, C 1 -C 20 alkyl, C 1 -C 20 substituted with at least one -F Alkyl, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthrenyl, pyrenyl, pyridyl, triazinyl or carbazolyl.
舉例而言,以上化學式2(1)至化學式2(14)中之Z11至Z18可各獨立地為氫原子、氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、甲基、乙基、丙基、丁基、戊基、甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基或咔唑基,但不限於此,*表示鍵結位置。 For example, Z 11 to Z 18 in the above Chemical Formula 2(1) to Chemical Formula 2(14) may be independently hydrogen atom, deuterium atom, -F, -Cl, -Br, -I, -CN, hydroxyl group , -NO 2 , amino, carboxamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt, phosphoric acid or its salt, methyl, ethyl, propyl, butyl, pentyl, methoxy Group, ethoxy group, propoxy group, butoxy group, pentyloxy group, phenyl group, naphthyl group, anthracenyl group, phenanthrenyl group, pyrenyl group, pyridyl group, triazinyl group or carbazolyl group, but not limited to this, * Indicates the bonding position.
於以上化學式1中,Ar1與Ar2的至少之一可為經至少兩個拉電子基取代之C6-C60芳基。 In the above Chemical Formula 1, at least one of Ar 1 and Ar 2 may be a C 6 -C 60 aryl group substituted with at least two electron withdrawing groups.
於一些實施例中,Ar1與Ar2的至少之一可為經至少兩個拉電子基取代之苯基、聯苯基、萘基、蒽基、菲基、芘基或茀基(fluorenyl group)。拉電子基可各獨立地選自由吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、 腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、酞嗪基、苯並咪唑基及咔唑基組成之群組。 In some embodiments, at least one of Ar 1 and Ar 2 may be phenyl, biphenyl, naphthyl, anthryl, phenanthryl, pyrenyl, or fluorenyl group substituted with at least two electron withdrawing groups ). The electron withdrawing group may be independently selected from pyridyl, pyrazinyl, pyrimidinyl, quinolinyl, isoquinolinyl, quinazolinyl, triazinyl, benzimidazolyl and carbazolyl; via deuterium atom, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, carboxamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt, phosphate or its salt, C 1 -C 20 alkyl, C 1 -C 20 alkyl substituted with at least one -F, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthrenyl, pyrenyl, pyridyl, tri Pyridyl, pyrazinyl, pyrimidinyl, quinolinyl, isoquinolinyl, quinazolinyl, phthalazinyl, benzimidazolyl and carbazolyl Group.
以上化學式1之胺系化合物中的Ar1與Ar2的至少之一為經至少一個以上之拉電子基取代之C6-C60芳基。據此,胺系化合物可由以下化學式1(1)或化學式1(2)表示:
於以上化學式1(1)中,Ar2為經取代或未經取代之C6-C20芳基或經取代或未經取代之C2-C20雜芳基。於以上化學式1(1)與化學式1(2)中,A環與B環各獨立地為經取代之C6-C20芳基;R1與R2各獨立地為選自由:-F;-CN;-NO2;經至少一個-F取代之C1-C60烷基;C2-C60雜芳基;及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、經至少一個-F取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基與C2-C60雜芳基的至少之一取代之C2-C60雜芳基組成之群組之拉電子基;且p與q各獨立地為1至9之整數。 In the above Chemical Formula 1(1), Ar 2 is a substituted or unsubstituted C 6 -C 20 aryl group or a substituted or unsubstituted C 2 -C 20 heteroaryl group. In the above Chemical Formula 1(1) and Chemical Formula 1(2), ring A and ring B are each independently a substituted C 6 -C 20 aryl group; R 1 and R 2 are each independently selected from: -F; -CN; -NO 2 ; C 1 -C 60 alkyl substituted with at least one -F; C 2 -C 60 heteroaryl; and deuterium atom, -F, -Cl, -Br, -I, -CN , Hydroxyl, -NO 2 , amino, carboxamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt, phosphate or its salt, C 1 -C 60 alkyl, substituted by at least one -F C 1 -C 60 alkyl, C 1 -C 60 alkoxy, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl, C 6 -C 60 aryl and C 2 -C 60 heteroaryl An electron-withdrawing group consisting of at least one substituted C 2 -C 60 heteroaryl group; and p and q are each independently an integer from 1 to 9.
化學式1(1)至化學式1(2)中之拉電子基如上所述,因此其詳細之描述於此將不再重複。 The electron-withdrawing groups in Chemical Formula 1(1) to Chemical Formula 1(2) are as described above, so their detailed description will not be repeated here.
舉例而言,胺系化合物可由以上化學式1(1)表示,其中化學式1(1)中p數量個R1中的至少之一可為-CN。 For example, the amine-based compound may be represented by the above Chemical Formula 1(1), wherein at least one of p number R 1 in Chemical Formula 1(1) may be -CN.
於一些實施例中,胺系化合物可由以上化學式1(2)表示,其中化學式1(2)中p數量個R1與q數量個R2中的至少之一可為-CN。 In some embodiments, the amine-based compound may be represented by the above Chemical Formula 1(2), wherein at least one of the p number of R 1 and the q number of R 2 in Chemical Formula 1(2) may be -CN.
於一些實施例中,胺系化合物可由以上化學式1(1)表示,其中化學式1(1)中之A環可為經取代之苯基、經取代之聯苯基、經取代之萘基、經取代之蒽基、經取代之菲基、經取代之芘基或經取代之茀基,但不限於此。 In some embodiments, the amine compound can be represented by the above Chemical Formula 1(1), wherein the A ring in Chemical Formula 1(1) can be substituted phenyl, substituted biphenyl, substituted naphthyl, Substituted anthracenyl, substituted phenanthrenyl, substituted pyrene or substituted fluorenyl, but not limited thereto.
於一些實施例中,胺系化合物可由以上化學式1(2)表示,其中化學式1(2)中之A環與B環可各獨立地為經取代之苯基、經取代之聯苯基、經取代之萘基、經取代之蒽基、經取代之菲基、經取代之芘基或經取代之茀基。 In some embodiments, the amine compound can be represented by the above Chemical Formula 1(2), wherein the A ring and the B ring in the Chemical Formula 1(2) can each independently be substituted phenyl, substituted biphenyl, Substituted naphthyl, substituted anthracenyl, substituted phenanthrenyl, substituted pyrene or substituted stilbyl.
於一些實施例中,胺系化合物可由化學式1(1)表示,其中A環可為經取代之苯基、經取代之聯苯基、經取代之萘基、經取代之蒽基、經取代之菲基、經取代之芘基或經取代之茀基;R1可為選自由吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基;與經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、酞嗪基、苯並咪唑基及咔唑基組成之群組之至少一拉電子基;而 p可為2、3或4,舉例而言,可為2。 In some embodiments, the amine compound may be represented by Chemical Formula 1(1), wherein ring A may be substituted phenyl, substituted biphenyl, substituted naphthyl, substituted anthryl, substituted Phenanthrenyl, substituted pyrenyl or substituted fluorenyl; R 1 can be selected from pyridyl, pyrazinyl, pyrimidinyl, quinolinyl, isoquinolinyl, quinazolinyl, triazinyl, benzene Imidazolyl and carbazolyl; with deuterium atom, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, carboxamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonate acid group or a salt thereof, a phosphoric acid group or a salt thereof, C 1 -C 20 alkyl, -F substituted with at least one of C 1 -C 20 alkyl, C 1 -C 20 alkoxy group, a phenyl group, a naphthyl group, Anthryl, phenanthryl, pyrenyl, pyridyl, triazinyl and carbazolyl substituted pyridyl, pyrazinyl, pyrimidinyl, quinolinyl, isoquinolinyl, quinazolinyl, phthalide At least one electron-withdrawing group of the group consisting of aziridinyl, benzimidazolyl, and carbazolyl; and p may be 2, 3, or 4, for example, 2.
於一些其他實施例中,胺系化合物可由化學式1(2)表示,其中A環與B環可各獨立地為經取代之苯基其中A環可為經取代之苯基、經取代之聯苯基、經取代之萘基、經取代之蒽基、經取代之菲基、經取代之芘基或經取代之茀基;R1與R2可各獨立地為選自由吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基;與經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、酞嗪基、苯並咪唑基及咔唑基組成之群組之至少一拉電子基;而p與q可各獨立地為2、3或4之整數,舉例而言,可皆為2之整數。 In some other embodiments, the amine compound can be represented by Chemical Formula 1(2), wherein ring A and ring B can each independently be substituted phenyl, and ring A can be substituted phenyl, substituted biphenyl Group, substituted naphthyl group, substituted anthracenyl group, substituted phenanthrenyl group, substituted pyrene group or substituted fluorenyl group; R 1 and R 2 may each independently be selected from pyridyl, pyrazinyl , Pyrimidinyl, quinolinyl, isoquinolinyl, quinazolinyl, triazinyl, benzimidazolyl and carbazolyl; with deuterium atoms, -F, -Cl, -Br, -I, -CN , Hydroxyl, -NO 2 , amino, carboxamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt, phosphoric acid or its salt, C 1 -C 20 alkyl, substituted by at least one -F P 1 -C 20 alkyl, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthryl, pyrenyl, pyridyl, triazinyl and carbazolyl substituted pyridyl , Pyrazinyl, pyrimidinyl, quinolinyl, isoquinolinyl, quinazolinyl, phthalazinyl, benzimidazolyl, and carbazolyl; at least one electron-withdrawing group; and p and q may Each is independently an integer of 2, 3, or 4, for example, all may be integers of 2.
以上化學式1中Ar1與Ar2的至少之一可為經上列至少一拉電子基取代之苯基、聯苯基、萘基、蒽基、菲基、芘基或茀基。 At least one of Ar 1 and Ar 2 in the above Chemical Formula 1 may be phenyl, biphenyl, naphthyl, anthracenyl, phenanthryl, pyrenyl, or fluorenyl substituted with at least one electron withdrawing group listed above.
於以上化學式1中,Ar1與Ar2可各獨立地為經取代或未經取代之苯基、經取代或未經取代之並環戊二烯基(pentalenyl group)、經取代或未經取代之茚基(indenyl group)、經取代或未經取代之萘基、經取代或未經取代之薁基(azulenyl group)、經取代或未經取代之並環庚三烯基(heptalenyl group)、經取代或未經取代之二環戊二烯並苯基(indacenyl group)、經取代或未經取代之苊基(acenaphthyl group)、經取代或未經取代之茀基、經取代或未經取代之丙烯合萘基(phenalenyl group)、經取代或未經取代之菲基、經取代或未經取代之蒽基、經取代或未經取代之丙二烯合茀基(fluoranthenyl group)、經取 代或未經取代之聯伸三苯基(triphenylenyl group)、經取代或未經取代之芘基、經取代或未經取代之蒯基(chrysenyl group)、經取代或未經取代之稠四苯基(naphthacenyl group)、經取代或未經取代之苉基(picenyl group)、經取代或未經取代之苝基(perylenyl group)、經取代或未經取代之五苯基(pentaphenyl group)、經取代或未經取代之稠六苯基(hexacenyl group)、經取代或未經取代之吡咯基、經取代或未經取代之吡唑基、經取代或未經取代之咪唑基、經取代或未經取代之咪唑啉基、經取代或未經取代之咪唑吡啶基、經取代或未經取代之咪唑嘧啶基、經取代或未經取代之吡啶基、經取代或未經取代之吡嗪基、經取代或未經取代之嘧啶基、經取代或未經取代之苯並咪唑基、經取代或未經取代之吲哚基、經取代或未經取代之嘌呤基、經取代或未經取代之喹啉基、經取代或未經取代之酞嗪基、經取代或未經取代之吲哚嗪基、經取代或未經取代之萘啶基(naphthyridinyl group)、經取代或未經取代之喹唑啉基、經取代或未經取代之噌啉基、經取代或未經取代之吲唑基、經取代或未經取代之咔唑基、經取代或未經取代之吩嗪基、經取代或未經取代之菲啶基、經取代或未經取代之吡喃基(pyranyl group)、經取代或未經取代之色烯基(chromenyl group)、經取代或未經取代之呋喃基(furanyl group)、經取代或未經取代之苯並呋喃基(benzofuranyl group)、經取代或未經取代之噻吩基(thienyl group)經取代或未經取代之苯並噻吩基(benzothienyl group)、經取代或未經取代之異噻唑基(isothiazolyl group)、經取代或未經取代之苯並咪唑基(benzoimidazolyl group)、經取代或未經取代之異噁唑基(isoxazolyl group)、經取代或未經取代之二苯並噻吩基(dibenzothienyl group)、經取代或未經取代之二苯並呋喃基(dibenzofuranyl group)、經取代或未經取代之三嗪基、經取代或未經取代之噁二唑基(oxadiazolyl group)、 經取代或未經取代之噠嗪基、經取代或未經取代之三唑基、經取代或未經取代之四唑基或經取代或未經取代之啡啉基(phenanthrolinyl group)。Ar1與Ar2的至少之一可為經上列至少一拉電子基取代之苯基聯苯基、萘基、蒽基、菲基、芘基或茀基。 In the above Chemical Formula 1, Ar 1 and Ar 2 may each independently be substituted or unsubstituted phenyl, substituted or unsubstituted pentalenyl group, substituted or unsubstituted Indenyl group, substituted or unsubstituted naphthyl, substituted or unsubstituted azulenyl group, substituted or unsubstituted heptalenyl group, Substituted or unsubstituted dicyclopentadienyl (indacenyl group), substituted or unsubstituted acenaphthyl group, substituted or unsubstituted stilbene, substituted or unsubstituted Propylene naphthyl (phenalenyl group), substituted or unsubstituted phenanthrenyl, substituted or unsubstituted anthryl, substituted or unsubstituted propadienyl group (fluoranthenyl group), substituted Or unsubstituted triphenylenyl group, substituted or unsubstituted pyrenyl, substituted or unsubstituted chrysenyl group, substituted or unsubstituted fused tetraphenyl ( naphthacenyl group), substituted or unsubstituted picenyl group, substituted or unsubstituted perylenyl group, substituted or unsubstituted pentaphenyl group, substituted or Unsubstituted fused hexaphenylyl group, substituted or unsubstituted pyrrolyl, substituted or unsubstituted pyrazolyl, substituted or unsubstituted imidazolyl, substituted or unsubstituted Imidazolinyl, substituted or unsubstituted imidazolyl, pyridyl substituted or unsubstituted, pyridyl substituted or unsubstituted, pyrazinyl substituted or unsubstituted, substituted Or unsubstituted pyrimidinyl, substituted or unsubstituted benzimidazolyl, substituted or unsubstituted indolyl, substituted or unsubstituted purinyl, substituted or unsubstituted quinoline Group, substituted or unsubstituted phthalazinyl, substituted or unsubstituted indolizinyl, substituted or unsubstituted naphthyridinyl group, substituted or unsubstituted quinazoline Group, substituted or unsubstituted cinnoline, substituted or unsubstituted indazolyl, substituted or unsubstituted carbazolyl, substituted or unsubstituted phenazinyl, substituted or unsubstituted Substituted phenanthridinyl, substituted or unsubstituted pyranyl group, substituted or unsubstituted chromenyl group, substituted or unsubstituted furanyl group , Substituted or unsubstituted benzofuranyl (benzofura nyl group), substituted or unsubstituted thienyl group, substituted or unsubstituted benzothienyl group, substituted or unsubstituted isothiazolyl group, substituted Or unsubstituted benzoimidazolyl group, substituted or unsubstituted isoxazolyl group, substituted or unsubstituted dibenzothienyl group, substituted or Unsubstituted dibenzofuranyl group, substituted or unsubstituted triazinyl group, substituted or unsubstituted oxadiazolyl group, substituted or unsubstituted pyridazine Radical, substituted or unsubstituted triazolyl, substituted or unsubstituted tetrazolyl or substituted or unsubstituted phenanthrolinyl group. At least one of Ar 1 and Ar 2 may be phenylbiphenyl, naphthyl, anthracenyl, phenanthrenyl, pyrenyl, or sulfenyl substituted with at least one electron withdrawing group listed above.
舉例而言,以上化學式1中之Ar1與Ar2可各獨立地為經取代或未經取代之苯基、經取代或未經取代之萘基、經取代或未經取代之茀基、經取代或未經取代之菲基、經取代或未經取代之蒽基、經取代或未經取代之聯伸三苯基、經取代或未經取代之芘基、經取代或未經取代之蒯基、經取代或未經取代之吡啶基、經取代或未經取代之吡嗪基、經取代或未經取代之嘧啶基、經取代或未經取代之喹啉基、經取代或未經取代之咔唑基、經取代或未經取代之三嗪基、經取代或未經取代之二苯並噻吩基、經取代或未經取代之二苯並呋喃基或經取代或未經取代之啡啉基。Ar1與Ar2的至少之一可為經選自由-F;-CN;經至少一個-F取代之C1-C20烷基;吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基;及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基組成之群組之至少一拉電子基取代之苯基、聯苯基、萘基、蒽基、菲基、芘基或茀基。 For example, Ar 1 and Ar 2 in the above Chemical Formula 1 may each independently be substituted or unsubstituted phenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted stilbene, Substituted or unsubstituted phenanthrenyl, substituted or unsubstituted anthracenyl, substituted or unsubstituted biphenylene, substituted or unsubstituted pyrenyl, substituted or unsubstituted quinyl , Substituted or unsubstituted pyridyl, substituted or unsubstituted pyrazinyl, substituted or unsubstituted pyrimidinyl, substituted or unsubstituted quinolinyl, substituted or unsubstituted Carbazolyl, substituted or unsubstituted triazinyl, substituted or unsubstituted dibenzothienyl, substituted or unsubstituted dibenzofuranyl, or substituted or unsubstituted morpholine base. At least one of Ar 1 and Ar 2 may be a C 1 -C 20 alkyl group selected from -F; -CN; substituted with at least one -F; pyridyl, pyrazinyl, pyrimidinyl, quinolinyl, iso Quinolinyl, quinazolinyl, triazinyl, benzimidazolyl and carbazolyl; and deuterium atoms, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, carbamimidoyl, corpus, hydrazone, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, C 1 -C 20 alkyl, -F substituted with at least one of C 1 -C 20 alkyl, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthrenyl, pyrenyl, pyridyl, triazinyl and carbazolyl substituted pyridyl, pyrazinyl, pyrimidinyl, quino Phenyl, isoquinolinyl, quinazolinyl, triazinyl, benzimidazolyl and carbazolyl at least one electron-withdrawing group substituted phenyl, biphenyl, naphthyl, anthracenyl, Phenyl, pyrene or fluorenyl.
於一些實施例中,化學式1中之Ar1與Ar2可藉單鍵鍵結在一起。 In some embodiments, Ar 1 and Ar 2 in Chemical Formula 1 may be bonded together by a single bond.
於一些實施例中胺系化合物可由以下化學式1A至化學式1J中之任一表示:
化學式1A至化學式1I中之Ar2可與以上結合其他化學式所述者相同。 Ar 2 in Chemical Formula 1A to Chemical Formula 1I may be the same as described above in conjunction with other chemical formulas.
化學式1A與化學式1B中之R11至R15的至少之一、化學式1C與化學式1D中之R11至R17的至少之一、化學式1E與化學式1J中之R11至R18的至少之一與化學式1F及化學式1G、化學式1H與化學式1I中之R11至R19的至少之一可各獨立地為選自由-F;-CN;-NO2;經至少一個-F取代之C1-C60烷基;C2-C60雜芳基;及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、經至少一個-F取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基與C2-C60雜芳基的至少之一取代之C2-C60雜芳基組成之群組之拉電子基。 At least one of R 11 to R 15 in Chemical Formula 1A and Chemical Formula 1B, at least one of R 11 to R 17 in Chemical Formula 1C and Chemical Formula 1D, at least one of R 11 to R 18 in Chemical Formula 1E and Chemical Formula 1J At least one of R 11 to R 19 in Chemical Formula 1F and Chemical Formula 1G, Chemical Formula 1H and Chemical Formula 1I may each independently be selected from -F; -CN; -NO 2 ; C 1 -substituted with at least one -F C 60 alkyl; C 2 -C 60 heteroaryl; and deuterium atom, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, formamidinyl, hydrazine, hydrazone, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, C 1 -C 60 alkyl, -F substituted with at least one of C 1 -C 60 alkyl, C 1 -C 60 alkoxy, A group consisting of C 2 -C 60 heteroaryl substituted with at least one of C 2 -C 60 alkenyl, C 2 -C 60 alkynyl, C 6 -C 60 aryl and C 2 -C 60 heteroaryl The electronic base.
舉例而言,化學式1A與化學式1B中之R11至R15的至少之一、化學式1C與化學式1D中之R11至R17的至少之一、化學式1E與化學式1J中之R11至R18的至少之一與化學式1F及化學式1G、化學式1H與化學式1I中之R11至R19的至少之一可各獨立地為選自由-F;-CN;經至少一個-F取代之C1-C20烷基;吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、 腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、酞嗪基、三嗪基、苯並咪唑基及咔唑基組成之群組之拉電子基,但不限於此。 For example, the formula 1A and Chemical Formula 1B in the R 11 to R is at least one, the formula 1C and Chemical Formula 1D, the R 15 at least one, of formula 1E Chemical Formula 1J in the R and 11 to R 17 is 11 to R 18 At least one of and at least one of R 11 to R 19 in Chemical Formula 1F and Chemical Formula 1G, Chemical Formula 1H and Chemical Formula 1I may each independently be selected from -F; -CN; C 1 -substituted with at least one -F C 20 alkyl; pyridyl, pyrazinyl, pyrimidinyl, quinolinyl, isoquinolinyl, quinazolinyl, triazinyl, benzimidazolyl and carbazolyl; via deuterium atom, -F,- Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, carboxamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt, phosphoric acid or its salt, C 1 -C 20 Alkyl, C 1 -C 20 alkyl substituted with at least one -F, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthrenyl, pyrenyl, pyridyl, triazinyl and carbo Pyridyl, pyrazinyl, pyrimidinyl, quinolinyl, isoquinolinyl, quinazolinyl, phthalazinyl, triazinyl, benzimidazolyl and carbazolyl The electronic group of the group is not limited to this.
於一些實施例中,化學式1A至化學式1I中之Ar2可為,但不限於經由-F;-CN;經至少一個-F取代之C1-C20烷基;吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基;與經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、酞嗪基、三嗪基、苯並咪唑基及咔唑基組成之群組之至少一拉電子基取代之苯基、聯苯基、萘基、蒽基、菲基、芘基或茀基。 In some embodiments, Ar 2 in Chemical Formula 1A to Chemical Formula 1I may be, but is not limited to, via -F; -CN; C 1 -C 20 alkyl substituted with at least one -F; pyridyl, pyrazinyl, Pyrimidinyl, quinolinyl, isoquinolinyl, quinazolinyl, triazinyl, benzimidazolyl and carbazolyl; with deuterium atoms, -F, -Cl, -Br, -I, -CN, Hydroxy, -NO 2 , amino, carboxamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt, phosphoric acid or its salt, C 1 -C 20 alkyl, C substituted with at least one -F Pyridyl substituted with at least one of 1 -C 20 alkyl, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthryl, pyrenyl, pyridyl, triazinyl and carbazolyl, Benzene substituted by at least one electron-withdrawing group consisting of pyrazinyl, pyrimidinyl, quinolinyl, isoquinolinyl, quinazolinyl, phthalazinyl, triazinyl, benzimidazolyl and carbazolyl Group, biphenyl group, naphthyl group, anthracenyl group, phenanthrenyl group, pyrenyl group or fluorenyl group.
於一些實施例中,胺系化合物可由以下化學式1A-(1)或化學式1A-(2)表示:
於化學式1A-(1)與化學式1A-(2)中,R12、R14、R22與R24可各獨立地為選自由吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、三嗪基、苯並咪唑基及咔唑基;與經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、經至少一個-F取代之C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、菲基、芘基、吡啶基、三嗪基與咔唑基的至少之一取代之吡啶基、吡嗪基、嘧啶基、喹啉基、異喹啉基、喹唑啉基、酞嗪基、苯並咪唑基及咔唑基組成之群組之拉電子基;且Ar2可為經取代或未經取代之苯基、經取代或未經取代之聯苯基、經取代或未經取代之萘基、經取代或未經取代之蒽基、經取代或未經取代之菲基、經取代或未經取代之芘基、經取代或未經取代之茀基。 In Chemical Formula 1A-(1) and Chemical Formula 1A-(2), R 12 , R 14 , R 22 and R 24 may each be independently selected from pyridyl, pyrazinyl, pyrimidinyl, quinolinyl, isoquino Porphyrinyl, quinazolinyl, triazinyl, benzimidazolyl and carbazolyl; with deuterium atoms, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, methyl amidino, corpus, hydrazone, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, C 1 -C 20 alkyl, -F substituted with at least one of C 1 -C 20 -alkyl, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, phenanthrenyl, pyrenyl, pyridyl, triazinyl and carbazolyl substituted pyridyl, pyrazinyl, pyrimidinyl, quinoline Group, isoquinolinyl, quinazolinyl, phthalazinyl, benzimidazolyl and carbazolyl group; and Ar 2 may be substituted or unsubstituted phenyl, substituted Or unsubstituted biphenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted anthryl, substituted or unsubstituted phenanthrenyl, substituted or unsubstituted pyrenyl, Substituted or unsubstituted stilbene.
於一些實施例中,化學式1A-(1)與化學式1A-(2)中之R12、R14、R22與R24可各獨立地選自由-F;-CN;-CH2F;-CHF2;-CF3;與由以上化學式2(1)至化學式2(14)表示之基團所組成之群組。 In some embodiments, R 12 , R 14 , R 22 and R 24 in Chemical Formula 1A-(1) and Chemical Formula 1A-(2) may each be independently selected from -F; -CN; -CH 2 F;- CHF 2 ; -CF 3 ; and a group consisting of the groups represented by the above Chemical Formula 2(1) to Chemical Formula 2(14).
於一些實施例中,以上化學式1A-(1)與化學式1A-(2)中之R12、R14、R22與R24可各獨立地為由以上化學式2(1)至化學式2(8)表示之基團。 In some embodiments, R 12 , R 14 , R 22 and R 24 in the above Chemical Formula 1A-(1) and Chemical Formula 1A-(2) may each independently be from the above Chemical Formula 2(1) to Chemical Formula 2(8 ) Represents the group.
於一些實施例中,以上化學式1A-(1)與化學式1A-(2)中之R12、R14、R22與R24可各獨立地為由以上化學式2(2)表示,但不限於此。 In some embodiments, R 12 , R 14 , R 22 and R 24 in the above Chemical Formula 1A-(1) and Chemical Formula 1A-(2) may each be independently represented by the above Chemical Formula 2(2), but not limited to this.
於化學式1A-(1)中,Ar2的可為苯基、聯苯基、萘基、蒽基、菲基、芘基或茀基,但不限於此。 In Chemical Formula 1A-(1), Ar 2 may be phenyl, biphenyl, naphthyl, anthracenyl, phenanthrenyl, pyrenyl, or fluorenyl, but is not limited thereto.
於化學式1中,X1可為經取代或未經取代之伸苯基 (phenylene group)、經取代或未經取代之伸並環戊二烯基(pentalenylene group)、經取代或未經取代之伸茚基(indenylene group)、經取代或未經取代之伸萘基(naphthylene group)、經取代或未經取代之伸薁基(azulenylene group)、經取代或未經取代之伸並環庚三烯基(heptalenylene group)、經取代或未經取代之伸二環戊二烯並苯基(indacenylene group)、經取代或未經取代之伸苊基(acenaphthylene group)、經取代或未經取代之伸茀基(fluorenylene group)、經取代或未經取代之伸丙烯合萘基(phenalenylene group)、經取代或未經取代之伸菲基(phenanthrenylene group)、經取代或未經取代之伸蒽基(anthrylene group)、經取代或未經取代之伸丙二烯合茀基(fluoranthenylene group)、經取代或未經取代之伸聯伸三苯基(triphenylenylene group)、經取代或未經取代之伸芘基(pyrenylene group)、經取代或未經取代之伸蒯基(chrysenylene group)、經取代或未經取代之伸稠四苯基(naphthacenylene group)、經取代或未經取代之伸苉基(picenylene group)、經取代或未經取代之伸苝基(perylenylene group)、經取代或未經取代之伸五苯基(pentaphenylene group)、經取代或未經取代之伸稠六苯基(hexacenylene group)、經取代或未經取代之伸吡咯基(pyrrolylene group)、經取代或未經取代之伸吡唑基(pyrazolylene group)、經取代或未經取代之伸咪唑基(imidazolylene group)、經取代或未經取代之伸咪唑啉基(imidazolinylene group)、經取代或未經取代之伸咪唑吡啶基(imidazopyridinylene group)、經取代或未經取代之伸咪唑嘧啶基(imidazopyrimidinylene group)、經取代或未經取代之伸吡啶基(pyridinylene group)、經取代或未經取代之伸吡嗪基(pyrazinylene group)、經取代或未經取代之伸嘧啶基(pyrimidinylene group)、經取代或未經取代之伸吲哚基(indolylene group)、經取代或未經取代之伸 嘌呤基(purinylene group)、經取代或未經取代之伸喹啉基(quinolinylene group)、經取代或未經取代之伸酞嗪基(phthalazinylene group)、經取代或未經取代之伸吲哚嗪(indolizinylene group)、經取代或未經取代之伸萘啶基(naphthyridinylene group)、經取代或未經取代之伸喹唑啉基(quinazolinylene group)、經取代或未經取代之伸噌啉基(cinnolinylene group)、經取代或未經取代之伸吲唑基(indazolylene group)、經取代或未經取代之伸咔唑基(carbazolylene group)、經取代或未經取代之伸吩嗪基(phenazinylene group)、經取代或未經取代之伸菲啶基(phenanthridinylene group)、經取代或未經取代之伸哌喃基(pyranylene group)、經取代或未經取代之伸色烯基(chromenylene group)、經取代或未經取代之伸呋喃基(furanylene group)、經取代或未經取代之伸苯並呋喃基(benzofuranylene group)、經取代或未經取代之伸噻吩基(thienylene group)、經取代或未經取代之伸苯並噻吩基(benzothienylene group)、經取代或未經取代之伸異噻唑基(isothiazolylene group)、經取代或未經取代之伸苯並咪唑基(benzoimidazolylene group)、經取代或未經取代之伸異噁唑基(isoxazolylene group)、經取代或未經取代之伸二苯並噻吩基(dibenzothienylene group)、經取代或未經取代之伸二苯並呋喃基(dibenzofuranylene group)、經取代或未經取代之伸三嗪基(triazinylene group)、經取代或未經取代之伸噁二唑基(oxadiazolylene group)、經取代或未經取代之伸噠嗪基(pyridazinylene group)、經取代或未經取代之伸三唑基(triazolylene group)或經取代或未經取代之伸四唑基(tetrazolylene group)。化學式中之X1可具有可選自上述取代基中之至少一取代基。 In Chemical Formula 1, X 1 may be substituted or unsubstituted phenylene group, substituted or unsubstituted pentanenylene group, substituted or unsubstituted Indenylene group, substituted or unsubstituted naphthylene group, substituted or unsubstituted azulenylene group, substituted or unsubstituted pendant cycloheptane Alkenyl (heptalenylene group), substituted or unsubstituted indacenylene group (indacenylene group), substituted or unsubstituted acenaphthylene group (acenaphthylene group), substituted or unsubstituted extension Fluorenylene group, substituted or unsubstituted phenalenylene group, substituted or unsubstituted phenanthrenylene group, substituted or unsubstituted phenanthrenylene group ( anthrylene group), substituted or unsubstituted fluoranthenylene group, substituted or unsubstituted triphenylenylene group, substituted or unsubstituted pyrenyl group (pyrenylene group), substituted or unsubstituted chrysenylene group, substituted or unsubstituted naphthacenylene group, substituted or unsubstituted picenylene group ), substituted or unsubstituted perylenylene group, substituted or unsubstituted pentaphenylene group, substituted or unsubstituted hexacenylene group, Substituted or unsubstituted pyrrolylene group, substituted or unsubstituted pyrazolylene group, substituted or unsubstituted imidazolylene group, substituted or unsubstituted Substituted imidazolinylene group, substituted or unsubstituted imidazopyridinylene group, substituted or unsubstituted imidazopyrimidinylene group, substituted or unsubstituted Pyridinyl gr oup), substituted or unsubstituted pyrazinylene group, substituted or unsubstituted pyrimidinyl group, substituted or unsubstituted indolylene group, Substituted or unsubstituted purinylene group, substituted or unsubstituted quinolinylene group, substituted or unsubstituted phthalazinylene group, substituted or Unsubstituted indolizinylene group, substituted or unsubstituted naphthyridinylene group, substituted or unsubstituted quinazolinylene group, substituted or unsubstituted Substituted cinnolinylene group, substituted or unsubstituted indazolylene group, substituted or unsubstituted carbazolylene group, substituted or unsubstituted Phenazinylene group, substituted or unsubstituted phenanthridinylene group, substituted or unsubstituted pyranylene group, substituted or unsubstituted Chromenylene group, substituted or unsubstituted furanylene group, substituted or unsubstituted benzofuranylene group, substituted or unsubstituted thiophene group (thienylene group), substituted or unsubstituted benzothienylene group, substituted or unsubstituted isothiazolylene group, substituted or unsubstituted benzimidazolyl (benzoimidazolylene group), substituted or unsubstituted isoxazolylene group, substituted or unsubstituted dibenzothienylene group, substituted or unsubstituted dibenzothienylene group Dibenzofuranylene group, substituted or unsubstituted triazinylene group, substituted or unsubstituted oxadiazolylene group, substituted or unsubstituted pyridazinyl group ( pyri dazinylene group), substituted or unsubstituted triazolylene group (triazolylene group) or substituted or unsubstituted tetrazolylene group (tetrazolylene group). X 1 in the chemical formula may have at least one substituent selected from the above-mentioned substituents.
於一些實施例中,化學式1中之X1可為但不限於經取 代或未經取代之伸苯基、經取代或未經取代之伸萘基、經取代或未經取代之伸茀基、經取代或未經取代之伸菲基、經取代或未經取代之伸蒽基、經取代或未經取代之伸聯伸三苯基、經取代或未經取代之伸芘基、經取代或未經取代之伸蒯基、經取代或未經取代之伸吡啶基、經取代或未經取代之伸吡嗪基、經取代或未經取代之伸嘧啶基、經取代或未經取代之伸喹啉基、經取代或未經取代之伸喹唑啉基、經取代或未經取代之伸咔唑基、經取代或未經取代之伸二苯並噻吩基、經取代或未經取代之伸二苯並呋喃基、經取代或未經取代之伸三嗪基或經取代或經取代或未經取代之伸噠嗪基、經取代或未經取代之伸三唑基或經取代或未經取代之伸四唑基。 In some embodiments, X 1 in Chemical Formula 1 may be, but not limited to, substituted or unsubstituted phenylene, substituted or unsubstituted naphthyl, substituted or unsubstituted fluorenyl, Substituted or unsubstituted phenanthrenyl, substituted or unsubstituted anthracenyl, substituted or unsubstituted triphenylene, substituted or unsubstituted pyrenyl, substituted or unsubstituted Substituted quinolyl, substituted or unsubstituted pyridyl, substituted or unsubstituted pyrazinyl, substituted or unsubstituted pyrimidinyl, substituted or unsubstituted quinidine Quinolinyl, substituted or unsubstituted quinazolinyl, substituted or unsubstituted carbazolyl, substituted or unsubstituted dibenzothienyl, substituted or unsubstituted diphenylthiophene P-furanyl, substituted or unsubstituted triazinyl, substituted or substituted or unsubstituted pyridazinyl, substituted or unsubstituted triazolyl, or substituted or unsubstituted stretch IV Oxazolyl.
舉例而言,以上化學式1中之X1可為由以下化學式5(1)至化學式5(16)的其中之一表示之基團:
於化學式5(1)至化學式5(16)中,Z1至Z8可各獨立地為氫原子;氘原子;-F;-Cl;-Br;-I;-CN;羥基;-NO2;氨基;甲脒基;胼;腙;羧基或其鹽;磺酸基或其鹽;磷酸基或其鹽;C1-C20烷基;C1-C20烷氧基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽的至少之一取代之C1-C20烷基與C1-C20烷氧基;C6-C20芳基;C2-C20雜芳基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、C1-C20烷氧基、C6-C20芳基與C2-C20雜芳基的至少之一取代之C6-C20芳基與C2-C20雜芳基。 In Chemical Formula 5(1) to Chemical Formula 5(16), Z 1 to Z 8 may each independently be a hydrogen atom; a deuterium atom; -F; -Cl; -Br; -I; -CN; hydroxyl; -NO 2 ; Amino; Carboxyamidine; Hydroxy; Hydrazone; Carboxy or its salt; Sulfonic acid or its salt; Phosphoric acid or its salt; C 1 -C 20 alkyl; C 1 -C 20 alkoxy; -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, formamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt, phosphoric acid or its salt at least One substituted C 1 -C 20 alkyl and C 1 -C 20 alkoxy; C 6 -C 20 aryl; C 2 -C 20 heteroaryl; via deuterium atom, -F, -Cl, -Br , -I, -CN, hydroxyl, -NO 2 , amino, carboxamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt, phosphoric acid or its salt, C 1 -C 20 alkyl, C 1 -C 20 alkoxy group, at least one C 6 -C 20 aryl and C 2 -C 20 heteroaryl group substituted with aryl of C 6 -C 20 aryl and C 2 -C 20 heteroaryl group.
於化學式5(1)至化學式5(16)中,*表示至化學式1中之 蒽的鍵結位置,而*’表示至化學式1中之N的鍵結位置。 In Chemical Formula 5(1) to Chemical Formula 5(16), * indicates to Chemical Formula 1 The bonding position of anthracene, and *'represents the bonding position to N in Chemical Formula 1.
舉例而言,化學式5(1)至化學式5(16)中之Z1至Z8可各獨立地為氫原子;氘原子;-F;-Cl;-Br;-I;-CN;羥基;-NO2;氨基;甲脒基;胼;腙;羧基或其鹽;磺酸基或其鹽;磷酸基或其鹽;甲基、乙基、丙基、丁基與戊基;甲氧基、乙氧基、丙氧基、丁氧基與戊氧基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽的至少之一取代之甲基、乙基、丙基、丁基、戊基、甲氧基、乙氧基、丙氧基、丁氧基與戊氧基;苯基、萘基、蒽基、菲基、芘基、茀基;吡啶基、嘧啶基、三嗪基、喹啉基與咔唑基;經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C20烷基、C1-C20烷氧基、苯基、萘基、蒽基、吡啶基的至少之一取代之苯基、萘基、蒽基、菲基、芘基、茀基、吡啶基、嘧啶基、三嗪基、喹啉基與咔唑基,但不限於此。 For example, Z 1 to Z 8 in Chemical Formula 5(1) to Chemical Formula 5(16) may each independently be a hydrogen atom; a deuterium atom; -F; -Cl; -Br; -I; -CN; hydroxyl; -NO 2 ; amino; carboxamidine; hydrazone; hydrazone; carboxyl or its salt; sulfonic acid or its salt; phosphate or its salt; methyl, ethyl, propyl, butyl and pentyl; methoxy , Ethoxy, propoxy, butoxy and pentyloxy; via deuterium atom, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, formamidinyl, hydrazine, Methyl, ethyl, propyl, butyl, pentyl, methoxy, ethoxy, propoxy substituted by at least one of hydrazone, carboxyl group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt Group, butoxy and pentyloxy; phenyl, naphthyl, anthracenyl, phenanthrenyl, pyrenyl, fluorenyl; pyridyl, pyrimidinyl, triazinyl, quinolinyl and carbazolyl; via deuterium atoms, -F, -Cl, -Br, -I, -CN, hydroxy, -NO 2 , amino, carboxamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt, phosphoric acid or its salt, C 1 -C 20 alkyl, C 1 -C 20 alkoxy, phenyl, naphthyl, anthracenyl, pyridyl substituted phenyl, naphthyl, anthracenyl, phenanthrenyl, pyrenyl, fluorenyl , Pyridyl, pyrimidinyl, triazinyl, quinolinyl and carbazolyl, but not limited to this.
於化學式1中,m為1至5之整數,且於一些實施例中,可為1、2或3,但不限於此。 In Chemical Formula 1, m is an integer of 1 to 5, and in some embodiments, it may be 1, 2, or 3, but is not limited thereto.
化學式1之胺系化合物可為,例如以下化合物1至化合物109的其中之一,但不限於此:
以上化學式1之胺系化合物中之Ar1與Ar2的至少之一為經由-F;-CN;-NO2;經至少一個-F取代之C1-C60烷基;C2-C60雜芳基;及經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基與C2-C60雜芳基的至少之一取代之C2-C60雜芳基組成之群組的至少一拉電子 基取代之C6-C60芳基,由以下化學式1’中之「A1」表示之部份能夠拉電子。 At least one of Ar 1 and Ar 2 in the amine compound of the above Chemical Formula 1 is via -F; -CN; -NO 2 ; C 1 -C 60 alkyl substituted with at least one -F; C 2 -C 60 Heteroaryl; and deuterium atom, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, carboxamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonate or its Salt, phosphate group or salt thereof, C 1 -C 60 alkyl group, C 1 -C 60 alkoxy group, C 2 -C 60 alkenyl group, C 2 -C 60 alkynyl group, C 6 -C 60 aryl group and C substituted with at least one of C 2 -C 60 heteroaryl group of group 2 -C 60 heteroaryl groups substituted with at least one electron withdrawing group of C 6 -C 60 aryl group, a 1 'of "the formula A1 "It means that the part can pull electrons.
化學式1’之胺系化合物具有豐富電子之萘-蒽核心與具拉電子能力之A1部分,而因此可具有良好之電子傳輸能力。當拉電子基為經取代或未經取代之C2-C60雜芳基時,經取代或未經取代之C2-C60雜芳基經由C6-C60芳基非直接地連結至化學式1’之N。從而包含化學式1之胺系化合物之有機發光二極體可具有改良之效率特性。 當拉電子基為-CN時,包含化學式1之胺系化合物之有機發光二極體可具有改良之使用壽命特性。 The amine compound of Chemical Formula 1'has an electron-rich naphthalene-anthracene core and an A1 portion with electron-pulling ability, and therefore can have good electron-transporting ability. When the electron-withdrawing group is a substituted or unsubstituted C 2 -C 60 heteroaryl group, the substituted or unsubstituted C 2 -C 60 heteroaryl group is indirectly connected to the C 6 -C 60 aryl group N in chemical formula 1'. Therefore, the organic light emitting diode including the amine compound of Chemical Formula 1 can have improved efficiency characteristics. When the electron-withdrawing group is -CN, the organic light-emitting diode including the amine compound of Chemical Formula 1 may have improved service life characteristics.
不希望被特定的理論束縛,於i)缺乏上述拉電子基之包含萘-蒽核心之胺系化合物或ii)具有直接連結至N之吡啶之包含萘-蒽核心之胺系化合物的任一種,最高佔有分子軌域(HOMO)電子密度可能集中於蒽部分附近。然而,於以上化學式1之蒽系化合物中,HOMO電子密度可能散佈於胺部分附近,從而最低未佔有分子軌域(LUMO)電子密度可能相對地定於蒽附近。此可能賦予化學式1之胺系化合物改良之偶極特性。從而可改良化學式1之胺系化合物之電子傳輸特性。 Without wishing to be bound by a particular theory, either i) an amine compound containing a naphthalene-anthracene core lacking the above electron-withdrawing group or ii) any one of an amine compound containing a naphthalene-anthracene core having pyridine directly linked to N, The highest occupied molecular orbital (HOMO) electron density may be concentrated near the anthracene part. However, in the anthracene-based compound of the above Chemical Formula 1, the HOMO electron density may be scattered near the amine portion, so that the lowest unoccupied molecular orbital (LUMO) electron density may be relatively set near the anthracene. This may give the amine compound of Chemical Formula 1 improved dipole characteristics. Thus, the electron transport characteristics of the amine compound of Chemical Formula 1 can be improved.
從而,包含任一由以上化學式1表示之胺系化合物之有機發光二極體可能具有低驅動電壓、高亮度、高效率與長使用壽命。 Therefore, the organic light-emitting diode including any amine compound represented by the above Chemical Formula 1 may have a low driving voltage, high brightness, high efficiency, and long service life.
化學式1之胺系化合物可以已知之有機合成方法合成。從將詳細描述於下之實例,領域內之習知技術者可理解化學式1之胺系化合物之合成方法。 The amine compound of Chemical Formula 1 can be synthesized by a known organic synthesis method. From the examples which will be described in detail below, those skilled in the art can understand the synthesis method of the amine compound of Chemical Formula 1.
至少一種化學式1之胺系化合物可用於有機發光二極體之一對電極間。舉例而言,至少一種胺系化合物可於發光層中和/或於陰極與發光層間(例如電子傳輸層、電子注入層或兼具電子傳輸與電子注入能力之功能層)。 At least one amine compound of Chemical Formula 1 can be used between the counter electrodes of one of the organic light emitting diodes. For example, at least one amine-based compound may be in the light-emitting layer and/or between the cathode and the light-emitting layer (for example, an electron transport layer, an electron injection layer, or a functional layer having both electron transport and electron injection capabilities).
根據本實施例之其他態樣,有機發光二極體包含第一電極、相對於第一電極設置之第二電極以及設置於第一電極與第二電極間之有機層,其中有機層包含至少一種上述化學式1之胺系化合物。 According to other aspects of this embodiment, the organic light emitting diode includes a first electrode, a second electrode disposed opposite to the first electrode, and an organic layer disposed between the first electrode and the second electrode, wherein the organic layer includes at least one The amine compound of the above Chemical Formula 1.
如用於本文中,片語「(例如有機層)包含至少一胺系化合物」意指「(有機層)包含一種以上化學式1之胺系化合物或至少二種不同的以上化學式1之胺系化合物」。 As used herein, the phrase "(eg organic layer) contains at least one amine compound" means "(organic layer) contains more than one amine compound of formula 1 or at least two different amine compounds of formula 1 above ".
於一些實施例中,有機層可僅包含化合物1作為胺系化合物。化合物1可於有機發光二極體之發光層或電子傳輸層中。於一些實施例中,有機層可包含化合物1與化合物3作為胺系化合物。化合物1與化合物3可於相同層中(例如電子傳輸層中)或可於不同層中(例如,分別於發光層與電子傳輸層中)。 In some embodiments, the organic layer may only contain Compound 1 as the amine compound. Compound 1 can be in the light-emitting layer or the electron transport layer of the organic light-emitting diode. In some embodiments, the organic layer may include Compound 1 and Compound 3 as amine compounds. Compound 1 and compound 3 may be in the same layer (for example, in the electron transport layer) or may be in different layers (for example, in the light-emitting layer and the electron transport layer, respectively).
有機層可包含選自電洞注入層(HIL)、電洞傳輸層(HTL)、兼具電洞注入及電洞傳輸能力之功能層(以下稱為H-功能層)、緩衝層、電子阻擋層(EBL)、發光層(EML)、電洞阻擋層(HBL)、電子傳輸層(ETL)、電子注入層(EIL)、以及兼具電子注入及電子傳輸能力之功能 層(以下稱為E-功能層)間的至少一層。 The organic layer may include a hole injection layer (HIL), a hole transport layer (HTL), a functional layer having both hole injection and hole transport capabilities (hereinafter referred to as an H-functional layer), a buffer layer, and an electron blocking layer Layer (EBL), light-emitting layer (EML), hole blocking layer (HBL), electron transport layer (ETL), electron injection layer (EIL), and functions with both electron injection and electron transport capabilities At least one layer between layers (hereinafter referred to as E-functional layer).
於此使用之詞彙「有機層」表示位於有機發光二極體之第一電極與第二電極間之單層及/或複數層。 The term "organic layer" used herein means a single layer and/or a plurality of layers between the first electrode and the second electrode of the organic light emitting diode.
有機層可包含發光層,其中至少一種胺系化合物可包含於發光層中。 The organic layer may include a light-emitting layer, wherein at least one amine-based compound may be included in the light-emitting layer.
發光層中之胺系化合物可用作為基質。當發光層中之胺系化合物用作為基質時,發光層可更包含螢光摻質。螢光摻質可為藍色螢光摻質。於一些實施例中,發光層中之胺系化合物可用作為摻質。 當發光層中之胺系化合物用作為摻質時,胺系化合物可為藍色螢光摻質。 The amine compound in the light-emitting layer can be used as a matrix. When the amine compound in the light-emitting layer is used as a matrix, the light-emitting layer may further contain a fluorescent dopant. The fluorescent dopant may be a blue fluorescent dopant. In some embodiments, the amine compound in the light-emitting layer can be used as a dopant. When the amine compound in the light emitting layer is used as a dopant, the amine compound may be a blue fluorescent dopant.
於一些實施例中,有機層可包含電子傳輸層,其中至少一種胺系化合物可包含於電子傳輸層中。 In some embodiments, the organic layer may include an electron transport layer, wherein at least one amine compound may be included in the electron transport layer.
第1圖為根據一實施例之有機發光二極體10之剖面示意圖。下文中,根據一實施例之有機發光二極體之結構及其製造方法現將參照第1圖描述。
FIG. 1 is a schematic cross-sectional view of an organic
基板11可為用於現存有機發光二極體之任何基板。於一些實施例中基板11可為例如具強機械強度、熱穩定、透明、表面光滑、易於處理並防水之玻璃基板或透明塑膠基板。
The
第一電極13可藉沈積或濺鍍第一電極形成材料於基板11上而形成。當第一電極13建構為陽極時,具高功函數之材料可用作為第一電極形成材料以利於電洞注入。第一電極13可為反射電極或透明電極。適合之第一電極形成材料包含透明及導電材料,例如ITO、IZO、SnO2及ZnO。第一電極13可使用鎂(Mg)、鋁(Al)、鋁-
鋰(Al-Li)、鈣(Ca)、鎂-銦(Mg-In)或鎂-銀(Mg-Ag)等以形成為反射電極。
The
第一電極13可具有單層結構或包含至少兩層之多層結構。舉例而言,第一電極13可具有ITO/銀/ITO之三層結構,但不限於此。
The
有機層15可設置於第一電極13上。
The
有機層15可包含電洞注入層、電洞傳輸層、緩衝層、發光層、電子傳輸層與電子注入層。
The
電洞注入層可藉真空沈積、旋轉塗佈、澆鑄、蘭慕爾-布羅吉(LB)沈積等形成於第一電極13上。
The hole injection layer may be formed on the
當電洞注入層使用真空沈積形成時,沈積條件可根據用以形成電洞注入層之化合物、將形成之電洞注入層所需之結構及熱特性而有所變動。舉例而言,真空沈積可於約100℃至約500℃之溫度、約10-8torr至約10-3torr之真空程度及約0.01Å/sec至約100Å/sec之沈積速率下執行。然而,沉積條件不限於此。 When the hole injection layer is formed using vacuum deposition, the deposition conditions may vary according to the compound used to form the hole injection layer, the required structure and thermal characteristics of the formed hole injection layer. For example, vacuum deposition may be performed at a temperature of about 100°C to about 500°C, a vacuum degree of about 10-8 torr to about 10-3 torr, and a deposition rate of about 0.01Å/sec to about 100Å/sec. However, the deposition conditions are not limited to this.
當電洞注入層係使用旋轉塗佈形成時,塗佈條件可根據用以形成電洞注入層之化合物、將形成之電洞注入層所需之結構及熱特性而有所變動。舉例而言,塗佈速度可於約2,000rpm至約5,000rpm之範圍內及在塗佈後執行以移除剩餘溶劑之熱處理溫度為約80℃至約200℃之範圍內。然而,塗佈條件不限於此。 When the hole injection layer is formed using spin coating, the coating conditions may vary depending on the compound used to form the hole injection layer, the required structure and thermal characteristics of the formed hole injection layer. For example, the coating speed may be in the range of about 2,000 rpm to about 5,000 rpm and the heat treatment temperature performed after coating to remove the remaining solvent is in the range of about 80°C to about 200°C. However, the coating conditions are not limited to this.
電洞注入層可包含任何一般用以形成電洞注入層之材料。可用以形成電洞注入層之材料之實例為N,N'-聯苯-N,N'-雙-[4-(苯基-間甲苯基-氨基)-苯基]-聯苯-4,4'-二胺 (N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4' -diamine ,DNTPD)、例如酞菁銅之酞菁化合物、4,4',4"-三(3-甲基苯基苯基氨基)三苯胺(4,4’,4”-tris(3-methylphenylphenylamino)triphenylamine,m-MTDATA)、N,N'-二(1-萘基)-N,N'-二苯基聯苯胺(N,N’-di(1-naphthyl)-N,N’-diphenylbenzidine,NPB)、TDATA、2T-NATA、聚苯胺/十二烷基苯磺酸(polyaniline/dodecylbenzenesulfonic acid(Pani/DBSA)、聚(3,4-乙烯基二氧基噻吩)/聚(4-苯乙烯磺酸)(poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate)(PEDOT/PSS)、聚苯胺/樟腦磺酸(polyaniline/camphor sulfonicacid(Pani/CSA)或聚苯胺/聚(4-硫磺苯乙烯)(polyaniline/poly(4-styrenesulfonate),PANI/PSS),但不限於此。 The hole injection layer may include any material commonly used to form a hole injection layer. An example of a material that can be used to form the hole injection layer is N,N'-biphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4, 4'-diamine (N, N '-diphenyl-N , N' -bis- [4- (phenyl-m-tolyl-amino) -phenyl] -biphenyl-4,4 '- diamine, DNTPD), phthalocyanine e.g. Copper phthalocyanine compound, 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine (4,4',4"-tris(3-methylphenylphenylamino)triphenylamine,m-MTDATA) , N,N'-bis(1-naphthyl)-N,N'-diphenylbenzidine (N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine,NPB), TDATA, 2T -NATA, polyaniline/dodecylbenzenesulfonic acid (Pani/DBSA), poly(3,4-vinyldioxythiophene)/poly(4-styrenesulfonic acid) (poly( 3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate)(PEDOT/PSS), polyaniline/camphor sulfonicacid (Pani/CSA) or polyaniline/poly(4-sulfostyrene) (polyaniline/ poly(4-styrenesulfonate), PANI/PSS), but not limited to this.
電洞注入層之厚度可為約100Å至約10,000Å,且於一些實施例中,可為約100Å至約1,000Å。當電洞注入層之厚度於此範圍內時,不需大幅(substantial)增加驅動電壓,電洞注入層即可獲得良好之電洞注入能力。 The thickness of the hole injection layer may be about 100Å to about 10,000Å, and in some embodiments, may be about 100Å to about 1,000Å. When the thickness of the hole injection layer is within this range, there is no need to substantially increase the driving voltage, and the hole injection layer can obtain good hole injection capability.
接著,電洞傳輸層可藉真空沈積、旋轉塗佈、澆鑄或蘭慕爾-布羅吉(LB)沈積等形成於電洞注入層上。當電洞傳輸層使用真 空沈積或旋轉塗佈形成時,縱然沈積或塗佈條件可根據用以形成電洞傳輸層之材料而有所變動,沈積或塗佈條件可與用以形成電洞注入層者相似。 Next, the hole transport layer may be formed on the hole injection layer by vacuum deposition, spin coating, casting, or Lamborg-Brogee (LB) deposition. When the hole transport layer uses true When forming by vacuum deposition or spin coating, although the deposition or coating conditions may vary according to the material used to form the hole transport layer, the deposition or coating conditions may be similar to those used to form the hole injection layer.
適合之習知之電洞傳輸材料之非限制實例為例如N-苯基咔唑(N-phenylcarbazole)、聚乙烯基咔唑(polyvinylcarbazole)之咔唑衍生物(carbazole derivative)、N,N'-二(3-甲基苯基)-N,N'-二苯基-[1,1-聯苯]-4,4'-二胺(N,N’-bis(3-methylphenyl)-N,N’-diphenyl-[1,1-biphenyl]-4,4’-diamine,TPD)、4,4',4"-三(N-咔唑)三苯胺(4,4’,4”-tris(N-carbazolyl)triphenylamine,TCTA)、N,N'-二(1-萘基)-N,N'-二苯基聯苯胺(N,N’-di(1-naphthyl)-N,N’-diphenylbenzidine),NPB)。 Non-limiting examples of suitable conventional hole transport materials are, for example, N-phenylcarbazole, polyvinylcarbazole, carbazole derivative, N,N'-bis (3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine (N,N'-bis(3-methylphenyl)-N,N '-diphenyl-[1,1-biphenyl]-4,4'-diamine,TPD), 4,4',4"-tri(N-carbazole) triphenylamine (4,4',4"-tris( N-carbazolyl)triphenylamine,TCTA),N,N'-bis(1-naphthyl)-N,N'-diphenylbenzidine (N,N'-di(1-naphthyl)-N,N'- diphenylbenzidine), NPB).
電洞傳輸層之厚度可為約50Å至約2,000Å,且於一些實施例中,可為約100Å至約1,500Å。當電洞傳輸層之厚度於此範圍內時,不需大幅增加驅動電壓,電洞傳輸層即可獲得良好之電洞傳輸能力。 The thickness of the hole transport layer can be about 50Å to about 2,000Å, and in some embodiments, can be about 100Å to about 1,500Å. When the thickness of the hole transmission layer is within this range, the hole transmission layer can obtain good hole transmission capacity without significantly increasing the driving voltage.
H-功能層(兼具電洞注入與電洞傳輸能力之功能層)可包含來自電洞注入層材料及電洞傳輸層材料各群組之至少一材料。H- 功能層之厚度可為約100Å至約10,000Å,且於一些實施例中,可為約100Å至約1,000Å。當H-功能層之厚度於此範圍內時,不需大幅增加驅動電壓,H-功能層即可良好之電洞注入與傳輸能力。 The H-functional layer (a functional layer having both hole injection and hole transmission capabilities) may include at least one material from each group of hole injection layer materials and hole transmission layer materials. H- The thickness of the functional layer may be about 100Å to about 10,000Å, and in some embodiments, may be about 100Å to about 1,000Å. When the thickness of the H-functional layer is within this range, there is no need to significantly increase the driving voltage, the H-functional layer can have good hole injection and transmission capabilities.
於一些實施例中,電洞注入層、電洞傳輸層與H-功能層的至少之一可包含由化學式300之化合物與化學式350之化合物的至少之一:
於化學式300與化學式350中,Ar11與Ar12可各獨立地為經取代或未經取代之C6-C60伸芳基,而Ar21與Ar22可各獨立地為經取代或未經取代之C6-C60芳基。Ar11與Ar12可各獨立地為伸苯基、伸萘基、伸菲基及伸芘基;與經苯基、萘基、蒽基的至少之一取代之伸苯基、伸萘基、伸菲基、伸茀基及伸芘基。Ar21與Ar22可各獨立地為苯基、萘基、菲基及伸芘基;與經苯基、萘基、蒽基的至少之一取代之苯基、萘基、菲基、茀基及芘基的期中之一。 In Chemical Formula 300 and Chemical Formula 350, Ar 11 and Ar 12 may each independently be a substituted or unsubstituted C 6 -C 60 arylene group, and Ar 21 and Ar 22 may each independently be a substituted or unsubstituted Substituted C 6 -C 60 aryl. Ar 11 and Ar 12 may independently be phenylene, naphthyl, phenanthrenyl, and pyrenyl; and phenylene, naphthyl, and naphthyl substituted with at least one of phenyl, naphthyl, and anthryl. Sphenanthrene, Stilbene and Pyrene. Ar 21 and Ar 22 may each independently be phenyl, naphthyl, phenanthrenyl, and pyrenyl; and phenyl, naphthyl, phenanthrenyl, fluorenyl substituted with at least one of phenyl, naphthyl, anthracenyl And one of the midterms of Pyrene.
於化學式300中,e與f可各獨立地為0至5之整數,例如可為0、1或2。於非限制實施例中,e可為1而f可為0,但本揭露不限於此。 In the chemical formula 300, e and f may each independently be an integer of 0 to 5, for example, may be 0, 1, or 2. In a non-limiting embodiment, e may be 1 and f may be 0, but the disclosure is not limited thereto.
於化學式300與化學式350中,R51至R58、R61至R69、R71與R72可各獨立地為氫原子、氘原子、鹵素原子、羥基、氰基、-NO2、氨基、甲脒基、肼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、經取代或未經取代之C1-C60烷基、經取代或未經取代之C2-C60烯基、經取代或未經取代之C2-C60炔基、經取代或未經取代之C1-C60烷氧基、經取代或未經取代之C3-C60環烷基、經取代或未經取代之C6-C60芳基、經取代或未經取代之C6-C60芳氧基或經取代或未經取代之C6-C60芳硫基。於一些非限制實施例中,R51至R58、R61至R69、R71與R72可各獨立地為氫原子;氘原子;鹵素原子;羥基;氰基;-NO2;氨基;甲脒基;肼;腙;羧基或其鹽;磺酸基或其鹽;磷酸基或其鹽;C1-C10烷基(例如甲基、乙基、丙基、丁基、戊基、己基等);C1-C10烷氧基(例如甲氧基、乙氧基、丙氧基、丁氧基、戊氧基等);經氘原子、鹵素原子、羥基、氰基、-NO2、氨基、甲脒基、肼、腙、羧基或其鹽、磺酸基或其鹽及磷酸基或其鹽的至少之一取代之C1-C10烷基或C1-C10烷氧基;苯基;萘基;蒽基;茀基;芘基;及經氘原子、鹵素原子、 羥基、氰基、-NO2、氨基、甲脒基、肼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C10烷基及C1-C10烷氧基的至少之一取代之苯基、萘基、蒽基、茀基與芘基的其中之一。 In Chemical Formula 300 and Chemical Formula 350, R 51 to R 58 , R 61 to R 69 , R 71 and R 72 may each independently be a hydrogen atom, a deuterium atom, a halogen atom, a hydroxyl group, a cyano group, -NO 2 , an amino group, Formamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt, phosphoric acid or its salt, substituted or unsubstituted C 1 -C 60 alkyl, substituted or unsubstituted C 2 -C 60 alkenyl, substituted or unsubstituted C 2 -C 60 alkynyl, substituted or unsubstituted C 1 -C 60 alkoxy, substituted or unsubstituted C 3 -C 60 ring Alkyl, substituted or unsubstituted C 6 -C 60 aryl, substituted or unsubstituted C 6 -C 60 aryloxy or substituted or unsubstituted C 6 -C 60 arylthio. In some non-limiting embodiments, R 51 to R 58 , R 61 to R 69 , R 71 and R 72 may each independently be a hydrogen atom; a deuterium atom; a halogen atom; a hydroxyl group; a cyano group; -NO 2 ; an amino group; Formamidine; hydrazine; hydrazone; carboxyl group or its salt; sulfonic acid group or its salt; phosphoric acid group or its salt; C 1 -C 10 alkyl group (such as methyl, ethyl, propyl, butyl, pentyl, Hexyl, etc.); C 1 -C 10 alkoxy (eg methoxy, ethoxy, propoxy, butoxy, pentoxy, etc.); via deuterium atoms, halogen atoms, hydroxyl groups, cyano groups, -NO 2. C 1 -C 10 alkyl or C 1 -C 10 alkoxy substituted by at least one of amino, formamidine, hydrazine, hydrazone, carboxyl or its salt, sulfonic acid or its salt, and phosphoric acid or its salt Phenyl; naphthyl; anthracenyl; sulfenyl; pyrenyl; and deuterium atom, halogen atom, hydroxyl group, cyano group, -NO 2 , amino group, formamidine group, hydrazine, hydrazone, carboxyl group or its salt, sulfonate Among acid group or its salt, phosphoric acid group or its salt, C 1 -C 10 alkyl group and C 1 -C 10 alkoxy group substituted by at least one of phenyl, naphthyl, anthracenyl, sulfonyl and pyrenyl one.
於化學式300中,R59可為苯基;萘基;蒽基;聯苯基;吡啶基;及經氘原子、鹵素原子、羥基、氰基、-NO2、氨基、甲脒基、肼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、經取代或未經取代之C1-C20烷基及經取代或未經取代之C1-C20烷氧基的至少之一取代之苯基、萘基、蒽基、聯苯基或吡啶基的其中之一。 In Chemical Formula 300, R 59 may be phenyl; naphthyl; anthracenyl; biphenyl; pyridyl; and deuterium atom, halogen atom, hydroxyl group, cyano group, -NO 2 , amino group, formamidine group, hydrazine, Hydrazone, carboxyl group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, substituted or unsubstituted C 1 -C 20 alkyl group and substituted or unsubstituted C 1 -C 20 alkoxy group At least one of substituted phenyl, naphthyl, anthracenyl, biphenyl or pyridyl.
於實施例中,化學式300之化合物可為由以下化學式300A表示之化合物:
化學式300A中之R51、R62、R61與R59與以上之定義相同,因此其詳細描述於此將不提供。 R 51 , R 62 , R 61 and R 59 in the chemical formula 300A have the same definitions as above, so a detailed description thereof will not be provided here.
於一些非限制實施例中,電洞注入層、電洞傳輸層或H-功能層的至少之一可包含以下化學式301至化學式320表示之至少
一化合物:
電洞注入層、電洞傳輸層或H-功能層的至少之一除了如上述之已知之電洞注入材料、電洞傳輸材料和/或兼具電洞注入與電洞傳輸能力之材料外,可更包含電荷產生材料以增加層導電度。 At least one of the hole injection layer, the hole transport layer, or the H-functional layer is in addition to the above-mentioned known hole injection materials, hole transport materials, and/or materials having both hole injection and hole transport capabilities, A charge generating material may be further included to increase the layer conductivity.
電荷產生材料可為例如p摻質。p摻質可為奎寧衍生物 (quinine derivative)、金屬氧化物及含氰化合物的其中之一,但不限於此。p摻質之非限制實例包含例如四氰基對苯二醌二甲烷(tetracyanoquinonedimethane,TCNQ)、2,3,5,6-四氟-四氰-1,4-二甲基對苯醌(2,3,5,6-tetrafluoro-tetracyano-1,4-benzoquinonedimethane,F4-TCNQ)等之醌衍生物(quinone derivative);例如鎢氧化物(tungsten oxide)、鉬氧化物(molybdenum oxide)等之金屬氧化物;及例如以下化合物200之含氰化合物。 The charge generating material may be, for example, p-doped. p-doped may be quinine derivatives (quinine derivative), one of metal oxides and cyanide compounds, but not limited to this. Non-limiting examples of p dopants include, for example, tetracyanoquinonedimethane (TCNQ), 2,3,5,6-tetrafluoro-tetracyano-1,4-dimethylp-benzoquinone (2 , 3,5,6-tetrafluoro-tetracyano-1,4-benzoquinonedimethane, F4-TCNQ) and other quinone derivatives; such as tungsten oxide, molybdenum oxide and other metals Oxides; and cyanide compounds such as the following compound 200.
當電洞注入層、電洞傳輸層或H-功能層更包含電荷產生材料時,電荷產生材料可均勻地或不均勻地散布於層中。 When the hole injection layer, the hole transport layer, or the H-functional layer further includes a charge generating material, the charge generating material may be uniformly or unevenly dispersed in the layer.
緩衝層可設置於電洞注入層、電洞傳輸層或H-功能層的至少之一與發光層間。緩衝層可藉根據發光層所發出之光的波長而補償光學共振距離,且因此可增加效率。緩衝層可包含俇為人知之電洞注入材料或電洞傳輸材料。於一些其他實施例中,緩衝層可包含與包含於位於緩衝層下方之電洞注入層、電洞傳輸層或H-功能層的其中之一材料相同的材料。 The buffer layer may be disposed between at least one of the hole injection layer, the hole transport layer, or the H-functional layer and the light-emitting layer. The buffer layer can compensate for the optical resonance distance according to the wavelength of light emitted by the light emitting layer, and thus can increase efficiency. The buffer layer may include well-known hole injection materials or hole transmission materials. In some other embodiments, the buffer layer may include the same material as one of the hole injection layer, the hole transport layer, or the H-functional layer included under the buffer layer.
接著,發光層可藉真空沈積、旋轉塗佈、澆鑄或蘭慕爾-布羅吉(LB)沈積等形成於電洞傳輸層、H-功能層或緩衝層上。當發光層使用真空沈積或旋轉塗佈形成時,縱然沈積或塗佈條件可根據用以形成發光層之材料而有所變動,沈積或塗佈條件可與用以形成電洞注入層者相似。 Next, the light emitting layer may be formed on the hole transport layer, the H-functional layer, or the buffer layer by vacuum deposition, spin coating, casting, or Lanmul-Brugge (LB) deposition. When the light emitting layer is formed using vacuum deposition or spin coating, although the deposition or coating conditions may vary according to the material used to form the light emitting layer, the deposition or coating conditions may be similar to those used to form the hole injection layer.
發光層可包含至少一種化學式1之胺系化合物。 The light-emitting layer may include at least one amine compound of Chemical Formula 1.
發光層中之胺系化合物可用作為摻質,例如藍色螢光摻質。除了胺系化合物外發光層可更包含基質。 The amine compound in the light-emitting layer can be used as a dopant, such as a blue fluorescent dopant. In addition to the amine-based compound, the light-emitting layer may further include a matrix.
基質之實例為Alq3、4,4'-N,N'-二咔唑-聯苯(4,4’-N,N’-dicarbazole-biphenyl,CBP)、聚(n-乙烯咔唑)(poly(n-vinylcarbazole),PVK)、9,10-二(萘-2-基)蒽(9,10-di(naphthalene-2-yl)anthracene,ADN)、TCTA、1,3,5-三(N-苯基苯並咪唑-2-基)苯(1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene,TPBI)、3-叔丁基-9,10-二(萘-2-基)蒽(3-tert-butyl-9,10-di-2-naphthylanthracene,TBADN)、E3、聯苯乙烯(distyrylarylene,DSA)、dmCBP(參見以下化學式)及以下化合物501至化合物509,但不限於此。 Examples of the matrix are Alq 3 , 4,4'-N,N'-dicarbazole-biphenyl (4,4'-N,N'-dicarbazole-biphenyl, CBP), poly(n-vinylcarbazole) ( poly(n-vinylcarbazole), PVK), 9,10-di(naphthalene-2-yl)anthracene (9,10-di(naphthalene-2-yl)anthracene, ADN), TCTA, 1,3,5-tris (N-phenylbenzimidazol-2-yl)benzene (1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene,TPBI), 3-tert-butyl-9,10-bis(naphthalene- 2-yl)anthracene (3-tert-butyl-9, 10-di-2-naphthylanthracene, TBADN), E3, distyrylarylene (DSA), dmCBP (see the following chemical formula) and the following compounds 501 to 509, But it is not limited to this.
於一些實施例中,由以下化學式400表示之蒽系化合物可用作為基質。 In some embodiments, an anthracene compound represented by the following chemical formula 400 may be used as a matrix.
化學式400中,Ar111與Ar112各獨立地為經取代或未經取代之C6-C60伸芳基;Ar113至Ar116各獨立地為經取代或未經取代之C1-C10烷基或經取代或未經取代之C6-C60芳基;而g、h、i與j各獨立地為0至4之整數。 In Chemical Formula 400, Ar 111 and Ar 112 are each independently substituted or unsubstituted C 6 -C 60 arylene groups; Ar 113 to Ar 116 are each independently substituted or unsubstituted C 1 -C 10 Alkyl or substituted or unsubstituted C 6 -C 60 aryl; and g, h, i and j are each independently an integer from 0 to 4.
於一些非限制實施例中,化學式400中之Ar111與Ar112可各獨立地為伸苯基、伸萘基、伸菲基或伸芘基;或經苯基、萘基及蒽基的至少之一所取代之伸苯基、伸萘基、伸菲基、伸茀基(fluorenyl group)或伸芘基。 In some non-limiting embodiments, Ar 111 and Ar 112 in Chemical Formula 400 may each independently be phenylene, naphthyl, phenanthrenyl, or pyrenyl; or at least one of phenyl, naphthyl, and anthracenyl One of the substituted phenylene, naphthyl, phenanthrenyl, fluorenyl group or fluorenyl group.
以上化學式400中,g、h、i與j可各獨立地為0、1或2。 In the above chemical formula 400, g, h, i, and j may each independently be 0, 1, or 2.
於一些非限制實施例中,化學式400之Ar113至Ar116可各獨立地為經苯基、萘基或蒽基的至少之一取代之C1-C10烷基;苯基;萘基;蒽基;芘基;菲基;茀基;經氘原子、鹵素原子、羥基、氰基、-NO2、氨基、甲脒基、肼、腙、羧酸基或其鹽、磺酸基或其鹽、 磷酸基或其鹽、C1-C60烷基、C2-C60烯基、C2-C60炔基、C1-C60烷氧基、苯基、萘基、蒽基、芘基、菲基與茀基之至少之一所取代之苯基、萘基、蒽基、芘基、菲基與茀基;及 的其中之一。 In some non-limiting embodiments, Ar 113 to Ar 116 of Chemical Formula 400 may each independently be C 1 -C 10 alkyl substituted with at least one of phenyl, naphthyl, or anthracenyl; phenyl; naphthyl; Anthryl; pyrenyl; phenanthryl; sulfonyl; deuterium atom, halogen atom, hydroxyl group, cyano group, -NO 2 , amino group, formamidine group, hydrazine, hydrazone, carboxylic acid group or salt thereof, sulfonic acid group or Salt, phosphate group or salt thereof, C 1 -C 60 alkyl group, C 2 -C 60 alkenyl group, C 2 -C 60 alkynyl group, C 1 -C 60 alkoxy group, phenyl group, naphthyl group, anthracenyl group, Phenyl, naphthyl, anthracenyl, pyrenyl, phenanthrenyl and stilbyl substituted with at least one of pyrenyl, phenanthrenyl and fluorenyl; and One of them.
舉例而言,以上化學式400之蒽系化合物可為由以下化學式表示之化合物的其中之一,但不限於此:
於一些實施例中,由以下化學式401表示之蒽系化合物可用作為基質。 In some embodiments, an anthracene compound represented by the following chemical formula 401 may be used as a matrix.
化學式401中之Ar122至Ar125可定義如同以上關於化學式400之Ar113描述,因此其詳細描述於此將不提供。 Ar 122 to Ar 125 in Chemical Formula 401 may be defined as described above for Ar 113 of Chemical Formula 400, so a detailed description thereof will not be provided here.
以上化學式401中之Ar126至Ar127可各獨立地為C1-C10烷基,例如甲基、乙基或丙基。 Ar 126 to Ar 127 in the above Chemical Formula 401 may each independently be a C 1 -C 10 alkyl group, such as methyl, ethyl or propyl.
於化學式401中,k及l可各獨立地為0至4的整數,例如0、1或2。 In Chemical Formula 401, k and l may each independently be an integer of 0 to 4, such as 0, 1, or 2.
舉例而言,以上化學式401之蒽系化合物可為以下化學式表示之化合物的其中之一,但不限於此: For example, the anthracene compound of the above chemical formula 401 may be one of the compounds represented by the following chemical formula, but is not limited thereto:
發光層中之胺系化合物可用作為基質。除了胺系化合物外,發光層可更包含摻質,例如藍色摻質、綠色摻質或紅色摻質。 The amine compound in the light-emitting layer can be used as a matrix. In addition to the amine-based compound, the light-emitting layer may further contain dopants, such as blue dopants, green dopants, or red dopants.
藍色摻質之非限制實施例為由以下化學式表示之化合物。 Non-limiting examples of blue doping are compounds represented by the following chemical formula.
紅色摻質之非限制實施例為由以下化學式表示之化合物。於一些實施例中,紅色摻質可為於後繪示之DCM或DCJTB。 Non-limiting examples of red doping are compounds represented by the following chemical formula. In some embodiments, the red dopant may be DCM or DCJTB shown later.
綠色摻質之非限制實施例為由以下化學式表示之化合物。於一些實施例中,綠色摻質可為呈現於下之C545T。 Non-limiting examples of green dopants are compounds represented by the following chemical formulas. In some embodiments, the green dopant may be C545T presented below.
可用於發光層的摻質之非限制實例為由以下化學式表示之錯合物。 Non-limiting examples of dopants that can be used in the light-emitting layer are complex compounds represented by the following chemical formulas.
可用於發光層的摻質之非限制實例為由以下化學式表示之鋨錯合物。 Non-limiting examples of dopants that can be used in the light-emitting layer are osmium complexes represented by the following chemical formulas.
當發光層包含基質與摻質時,發光層中摻質之量可為以基質之重量為100重量份為基準,大致於約0.01至15重量份。然而摻質之量不限於此範圍內。 When the light-emitting layer includes a matrix and a dopant, the amount of the dopant in the light-emitting layer may be based on 100 parts by weight of the matrix, which is approximately 0.01 to 15 parts by weight. However, the amount of doping is not limited to this range.
發光層之厚度可於約100Å至約1,000Å,且於一些實施例中,可為約200Å至約600Å之範圍內。當發光層之厚度於此範圍內時,不需大幅增加驅動電壓,發光層即可獲得良好之發光能力。 The thickness of the light-emitting layer may range from about 100Å to about 1,000Å, and in some embodiments, may range from about 200Å to about 600Å. When the thickness of the light-emitting layer is within this range, the light-emitting layer can obtain good light-emitting ability without significantly increasing the driving voltage.
接著,電子傳輸層可藉真空沈積、旋轉塗佈、澆鑄等形成於發光層上。當電子傳輸層以真空沈積或旋轉塗佈形成時,縱然沈積或塗佈條件可根據用以形成電子傳輸層之材料而有所變動,沈積或塗佈條件可與用以形成電洞注入層者相似。用以形成電子傳輸層之材料可為任何已知之能穩定傳輸自電子注入電極(陰極)注入之電子的材料。用以形成電子傳輸層之材料之實例為喹啉衍生物(quinoline derivative),例如三(8-羥基喹啉)鋁(tris(8-quinolinorate)aluminum,Alq3)、TAZ、BAlq、雙(10-羥基苯並[h]喹啉)鈹(beryllium bis(benzoquinolin-10-olate,Bebq2)、9,10-二(萘-2-基)蒽(ADN)、化合物201與化合物202,但不限於此。 Next, the electron transport layer can be formed on the light emitting layer by vacuum deposition, spin coating, casting, or the like. When the electron transport layer is formed by vacuum deposition or spin coating, although the deposition or coating conditions may vary according to the material used to form the electron transport layer, the deposition or coating conditions may be different from those used to form the hole injection layer similar. The material used to form the electron transport layer may be any known material that can stably transport electrons injected from the electron injection electrode (cathode). Examples of materials used to form the electron transport layer are quinoline derivatives, such as tris (8-quinolinorate) aluminum (Alq 3 ), TAZ, BAlq, bis (10 -Hydroxybenzo[h]quinoline) beryllium (beryllium bis (benzoquinolin-10-olate, Bebq 2 ), 9,10-bis(naphthalen-2-yl)anthracene (ADN), compound 201 and compound 202, but not Limited to this.
電子傳輸層可包含至少一種上述之胺系化合物。 The electron transport layer may contain at least one of the aforementioned amine compounds.
當化學式1之胺系化合物用作為形成電子傳輸層之材料時,可改良有機發光二極體之效率和/或使用壽命。包含化學式1之胺系化合物之電子傳輸層可更包含金屬錯合物,例如8-羥基喹啉鋰(lithium quinolate)。 When the amine compound of Chemical Formula 1 is used as a material for forming an electron transport layer, the efficiency and/or service life of the organic light emitting diode can be improved. The electron transport layer including the amine compound of Chemical Formula 1 may further include a metal complex, such as lithium quinolate.
電子傳輸層之厚度可於約100Å至約1,000Å,且於一些實施例中,可為約150Å至約500Å。當電子傳輸層於此範圍內時,不需大幅增加驅動電壓,電子傳輸層即可獲得令人滿意之電子傳輸能力。 The thickness of the electron transport layer may be from about 100Å to about 1,000Å, and in some embodiments, may be from about 150Å to about 500Å. When the electron transport layer is within this range, the electron transport layer can obtain satisfactory electron transport capability without significantly increasing the driving voltage.
於一些實施例中,除了已知之電子傳輸有機化合物外,電子傳輸層可更包含含金屬材料。 In some embodiments, in addition to known electron-transporting organic compounds, the electron-transporting layer may further include a metal-containing material.
含金屬材料可為鋰錯合物。鋰錯合物之非限制實例為羥基喹啉鋰(lithium quinolate,Liq)與以下化合物203:
接著,幫助電子自陰極注入之電子注入層可形成於電子傳輸層上。任何適合之電子注入材料可用以形成電子注入層。 Next, an electron injection layer that assists electron injection from the cathode can be formed on the electron transport layer. Any suitable electron injection material can be used to form the electron injection layer.
用以形成電子注入層之材料之實例為領域內已知之LiF、NaCl、CsF、Li2O與BaO。用以形成電子注入層之沈積或塗佈條件縱然可根據用以形成電子注入層之材料而有所變動,沈積或塗佈條件可與用以形成電洞注入層者相似。 Examples of materials used to form the electron injection layer are LiF, NaCl, CsF, Li 2 O, and BaO known in the art. The deposition or coating conditions used to form the electron injection layer may vary depending on the material used to form the electron injection layer. The deposition or coating conditions may be similar to those used to form the hole injection layer.
電子注入層之厚度可於約1Å至約100Å,且於一些實施例中,可為約3Å至約90Å。當電子注入層之厚度於此範圍內時,不需大幅增加驅動電壓,電子注入層即可獲得令人滿意之電子注入能 力。 The thickness of the electron injection layer may be from about 1Å to about 100Å, and in some embodiments, may be from about 3Å to about 90Å. When the thickness of the electron injection layer is within this range, the electron injection layer can obtain satisfactory electron injection energy without significantly increasing the driving voltage force.
第二電極17設置於有機層15上。第二電極17可為係電子注入電極之陰極。用以形成第二電極17之材料可包含具低功函數之金屬、合金、導電化合物或其混合物。關於此點,第二電極17可包含鋰(Li)、鎂(Mg)、鋁(Al)、鋁-鋰(Al-Li)、鈣(Ca)、鎂-銦(Mg-In)、鎂-銀(Mg-Ag)等,且可行為為薄膜形式透明電極。於一些實施例中,為製造頂發光型發光二極體,透明電極可包含氧化銦錫(ITO)或氧化銦鋅(IZO)。
The
雖然第1圖之有機發光裝置描述於上,本發明不限於此。 Although the organic light emitting device of FIG. 1 is described above, the present invention is not limited to this.
當磷光摻質用於發光層中時,電洞阻擋層可藉使用真空沈積、旋轉塗佈、澆鑄、蘭慕爾-布羅吉(LB)沈積等形成於電子傳輸層與發光層間或E-功能層與發光層間,以防止三重態激子或電洞擴散至電子傳輸層。當電洞阻擋層使用真空沈積或旋轉塗佈形成時,縱然沈積或塗佈條件可根據用以形成電洞阻擋層之材料而有所變動,沈積或塗佈條件可與用以形成電洞注入層者相似。可使用任何已知之電洞阻擋材料。電洞阻擋材料之非限制實例為噁二唑衍生物(oxadiazole derivative)、三唑衍生物(triazole derivative)、以及啡啉衍生物(phenanthroline derivative)。舉例而言,由以下化學式表示之BCP可用作為形成電洞阻擋層之材料。 When phosphorescent dopants are used in the light-emitting layer, the hole blocking layer can be formed between the electron transport layer and the light-emitting layer by vacuum deposition, spin coating, casting, Lanmul-Brugge (LB) deposition, or E- Between the functional layer and the light-emitting layer to prevent triplet excitons or holes from diffusing to the electron transport layer. When the hole blocking layer is formed by vacuum deposition or spin coating, although the deposition or coating conditions may vary depending on the material used to form the hole blocking layer, the deposition or coating conditions may be different from the hole injection The layers are similar. Any known hole blocking material can be used. Non-limiting examples of hole blocking materials are oxadiazole derivatives, triazole derivatives, and phenanthroline derivatives. For example, BCP represented by the following chemical formula can be used as a material for forming a hole blocking layer.
電洞阻擋層之厚度可於約20Å至約1,000Å,且於一些實施例中,可為約30Å至約300Å。當電洞阻擋層之厚度於此範圍內時,不需大幅增加驅動電壓,電洞阻擋層即可具有良好之電洞阻擋能力。 The thickness of the hole blocking layer may be from about 20Å to about 1,000Å, and in some embodiments, may be from about 30Å to about 300Å. When the thickness of the hole blocking layer is within this range, the hole blocking layer can have good hole blocking ability without significantly increasing the driving voltage.
用於本文中之未經取代之C1-C60烷基(或C1-C60烷基)之實例為C1-C60線形或分支烷基,例如甲基、乙基、丙基、異丁基(isobutyl)、第二丁基(sec-butyl)、戊基、異戊基(iso-amyl)與己基。經取代之C1-C60烷基之實例為至少一氫原子經氘原子;-F;-Cl;-Br;-I;-CN;羥基;-NO2;氨基;甲脒基;胼;腙;羧基或其鹽;磺酸基或其鹽;磷酸基或其鹽;三(C6-C60芳基)矽烷基;C1-C60烷基、C1-C60烷氧基、C2-C60烯基與C2-C60炔基;至少一氫原子經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽或磷酸基或其鹽的至少之一取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基或C2-C60炔基;C3-C60環烷基、C3-C60環烯基、C6-C60芳基、C2-C60雜芳基、C6-C60芳烷基、C6-C60芳氧基或C6-C60芳硫基;或經氘原子、-F、-Cl、-Br、-I、-CN、羥基、-NO2、氨基、甲脒基、胼、腙、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、C1-C60烷基、經至少一個-F取代之C1-C60烷基、C1-C60烷氧基、C2-C60烯基、C2-C60炔基、C6-C60芳基或C2-C60雜芳基的至少之一取代之C3-C60環 烷基、C3-C60環烯基、C6-C60芳基、C2-C60雜芳基、C6-C60芳烷基、C6-C60芳氧基或C6-C60芳硫基的至少之一取代之C1-C60烷基。 Examples of unsubstituted C 1 -C 60 alkyl (or C 1 -C 60 alkyl) used herein are C 1 -C 60 linear or branched alkyl groups, such as methyl, ethyl, propyl, Isobutyl, sec-butyl, pentyl, iso-amyl and hexyl. Examples of substituted C 1 -C 60 alkyl groups are at least one hydrogen atom via a deuterium atom; -F; -Cl; -Br; -I; -CN; hydroxyl; -NO 2 ; amino; formamidinyl; hydrazine; Hydrazone; carboxyl group or its salt; sulfonic acid group or its salt; phosphate group or its salt; tri(C 6 -C 60 aryl) silane group; C 1 -C 60 alkyl group, C 1 -C 60 alkoxy group, C 2 -C 60 alkenyl and C 2 -C 60 alkynyl; at least one hydrogen atom is deuterium, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino, formamidinyl C 1 -C 60 alkyl, C 1 -C 60 alkoxy, C 2 -C 60 substituted with at least one of sulfonyl group, hydrazone, hydrazone, carboxyl group or its salt, sulfonic acid group or its salt or phosphate group or its salt Alkenyl or C 2 -C 60 alkynyl; C 3 -C 60 cycloalkyl, C 3 -C 60 cycloalkenyl, C 6 -C 60 aryl, C 2 -C 60 heteroaryl, C 6 -C 60 aralkyl, C 6 -C 60 aryloxy or C 6 -C 60 arylthio; or deuterium atom, -F, -Cl, -Br, -I, -CN, hydroxyl, -NO 2 , amino , carbamimidoyl, corpus, hydrazone, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, C 1 -C 60 alkyl, -F substituted with at least one of C 1 -C 60 alkyl, C 3 -substituted with at least one of C 1 -C 60 alkoxy, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl, C 6 -C 60 aryl or C 2 -C 60 heteroaryl C 60 cycloalkyl, C 3 -C 60 cycloalkenyl, C 6 -C 60 aryl, C 2 -C 60 heteroaryl, C 6 -C 60 aralkyl, C 6 -C 60 aryloxy or C 1 -C 60 alkyl substituted with at least one C 6 -C 60 arylthio group.
未經取代之C1-C60烷氧基(或C1-C60烷氧基)可為由化學式-OA表示之基團,其中A為如上述之未經取代之C1-C60烷基。未經取代之C1-C60烷氧基之實例為甲氧基(methoxy group)與異丙氧基(isopropyloxy group)。烷氧基中之至少一氫原子可經結合C1-C60烷基而描述於上之取代基取代。 The unsubstituted C 1 -C 60 alkoxy group (or C 1 -C 60 alkoxy group) may be a group represented by the chemical formula -OA, where A is an unsubstituted C 1 -C 60 alkane group as described above base. Examples of unsubstituted C 1 -C 60 alkoxy groups are methoxy group and isopropyloxy group. At least one hydrogen atom in the alkoxy group may be substituted by the substituent described above in conjunction with the C 1 -C 60 alkyl group.
未經取代之C2-C60烯基(或C2-C60烯基)為具有少一或多個碳-碳雙鍵於未經取代C2-C60烷基之中心或末端之烴鏈。烯基之實例為乙烯基(ethenyl)、丙烯基(propenyl)、丁烯基(butenyl)等。未經取代之C2-C60烯基中之至少一氫原子可經結合C1-C60烷基而描述於上之取代基取代。 Unsubstituted C 2 -C 60 alkenyl (or C 2 -C 60 alkenyl) is a hydrocarbon having one or more carbon-carbon double bonds at the center or terminal of an unsubstituted C 2 -C 60 alkyl group chain. Examples of alkenyl groups are ethenyl, propenyl, butenyl and the like. At least one hydrogen atom in the unsubstituted C 2 -C 60 alkenyl group may be substituted by the substituent described above in conjunction with the C 1 -C 60 alkyl group.
未經取代之C2-C60炔基(C2-C60炔基)為具有至少一碳-碳參鍵於其中心或末端之未經取代C2-C60烷基。未經取代之C2-C60炔基(或C2-C60炔基)之實例包含乙炔基(ethynyl)、丙炔(propynyl)基等炔基中之至少一氫原子可經結合C1-C60烷基而描述於上之取代基取代。 The unsubstituted C 2 -C 60 alkynyl group (C 2 -C 60 alkynyl group) is an unsubstituted C 2 -C 60 alkyl group having at least one carbon-carbon reference bond at its center or terminal. Examples of the unsubstituted C 2 -C 60 alkynyl group (or C 2 -C 60 alkynyl group) to include ethynyl (ethynyl), an alkynyl group of at least one hydrogen atom propynyl (propynyl) group may be C 1 binding -C 60 alkyl and substituted by the substituent described above.
如用於本文中,未經取代之C3-C60環烷基指環狀、單價(monovalent)C3-C60碳之飽和烴基。未經取代之C3-C60環烷基之非限制實例為環丙基(cyclopropyl)、環丁基(cyclobutyl)、環戊基(cylcopentyl)、環己基(cyclohexyl)、環辛基(cyclooctyl)。環烷基中之至少一氫原子可經結合C1-C60烷基而描述於上之取代基取代。 As used herein, unsubstituted C 3 -C 60 cycloalkyl refers to a cyclic, monovalent C 3 -C 60 carbon saturated hydrocarbon group. Non-limiting examples of unsubstituted C 3 -C 60 cycloalkyl are cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cyclooctyl . At least one hydrogen atom in the cycloalkyl group may be substituted by the substituent group described above in combination with the C 1 -C 60 alkyl group.
如用於本文中,未經取代之C3-C60環烯基指非芳族、具至少一碳-碳雙鍵之環狀不飽和烴基。未經取代之C3-C60環烯基之實 例為環丙烯基(cyclopropenyl)、環丁烯基(cyclobutenyl)、環戊烯基(cylcopentenyl)、環己烯基(cyclohexcenyl)、環庚烯基(cycloheptenyl)、1,3-環己二烯基(1,3-cyclohexadienyl group)、1,4-環己二烯基(1,4-cyclohexadienyl group)、2,4-環庚二烯基(2,4-cycloheptadienyl group)與1,5-環辛二烯基(1,5-cyclooctadineyl group)。環烯基中之至少一氫原子可經結合C1-C60烷基而描述於上之取代基取代。 As used herein, unsubstituted C 3 -C 60 cycloalkenyl refers to a non-aromatic, cyclic unsaturated hydrocarbon group having at least one carbon-carbon double bond. Examples of unsubstituted C 3 -C 60 cycloalkenyl groups are cyclopropenyl, cyclobutenyl, cyclopentenyl, cylcopentenyl, cyclohexcenyl, cycloheptenyl (cycloheptenyl), 1,3-cyclohexadienyl group (1,3-cyclohexadienyl group), 1,4-cyclohexadienyl group (1,4-cyclohexadienyl group), 2,4-cycloheptadienyl ( 2,4-cycloheptadienyl group) and 1,5-cyclooctadieneyl (1,5-cyclooctadineyl group). At least one hydrogen atom in the cycloalkenyl group may be substituted by the substituent group described above in combination with the C 1 -C 60 alkyl group.
未經取代之C6-C60芳基為包含至少一芳香環之具有6至60個碳原子之碳環系統之單價基。未經取代之C6-C60伸芳基為包含至少一芳香環之具有6至60個碳原子之碳環系統之二價基(divalent group)。當芳基與伸芳基具有至少兩個環時,其可透過單鍵彼此融合。 參照C1-C60烷基,芳基與伸芳基中之至少一氫原子可經結合C1-C60烷基而描述於上之取代基取代。 The unsubstituted C 6 -C 60 aryl group is a monovalent group of a carbocyclic ring system having 6 to 60 carbon atoms including at least one aromatic ring. The unsubstituted C 6 -C 60 arylene group is a divalent group of a carbocyclic ring system having 6 to 60 carbon atoms including at least one aromatic ring. When the aryl group and the arylene group have at least two rings, they can be fused with each other through a single bond. Referring to the C 1 -C 60 alkyl group, at least one hydrogen atom in the aryl group and the aryl group may be substituted by the substituent described above in conjunction with the C 1 -C 60 alkyl group.
經取代或未經取代之C6-C60芳基之實例為苯基、C1-C10烷苯基(alkylphenyl group)(例如,乙苯基(ethylphenyl group))、C1-C10烷基聯苯基(alkylbiphenyl group)(e.g.,乙基聯苯基(ethylbiphenyl group))、鹵苯基(halophenyl group)(例如,o-、m-或p-氟苯基(fluorophenyl group)及二氯苯基(dichlorophenyl group)、二氰苯基(dicyanophenyl group)、三氟甲氧基苯基(trifluoromethoxyphenyl group)、o-、m-或p-甲苯基(tolyl group)、o-、m-或p-異丙苯基(cumenyl group)、2,4,6-三甲苯基(mesityl group)、苯氧基苯基(phenoxyphenyl group)、(α,α-二甲基苯)苯基((α,α-dimethylbenzene)phenyl group)、(N,N'-二甲基)胺苯基((N,N'-dimethyl)aminophenyl group)、(N,N'-二苯基)胺苯基((N,N'-diphenyl)aminophenyl group)、並環戊二烯基、茚基、萘基、鹵萘基(halonaphthyl group)(例如,氟萘基(fluoronaphthyl group))、C1-C10烷基萘基(alkylnaphthyl group)(例如,甲基萘基 (methylnaphthyl group))、C1-C10烷氧基萘基(alkoxynaphthyl group)(例如,甲氧基萘基(methoxynaphthyl group))、蒽基、薁基、並庚間三烯基、苊烯基(acenaphthylenyl group)、萉基(phenalenyl group)、茀基、蒽醌基(anthraquinolyl group)、甲基蒽基(methylanthryl group)、菲基、聯三伸苯、芘基、蒯基、乙基-蒯基(ethyl-chrysenyl group)、苉基(picenyl group)、苝基(perylenyl group)、氯苝基(chloroperylenyl group)、五苯基(pentaphenyl group)、稠五苯基、聯四苯基(tetraphenylenyl group)、六苯基(hexaphenyl group)、稠六苯基、茹基(rubicenyl group)、蔻基(coronenyl group)、聯伸三萘基(trinaphthylenyl group)、異稠七苯基(heptaphenyl group)、並環庚三烯基(heptalenyl group)、芘蒽基(pyranthrenyl group)及莪基(ovalenyl group)。經取代之C6-C60芳基之實例可依據上述之未經取代之C6-C60芳基與經取代之C1-C60烷基而推斷。經取代或未經取代之C6-C60伸芳基可依據上述經取代或未經取代之C6-C60芳基而推斷。 Examples of substituted or unsubstituted C 6 -C 60 aryl groups are phenyl, C 1 -C 10 alkylphenyl group (for example, ethylphenyl group), C 1 -C 10 alkyl Alkylbiphenyl group (eg, ethylbiphenyl group), halophenyl group (for example, o-, m- or p-fluorophenyl group) and dichloro Phenyl (dichlorophenyl group), dicyanophenyl (dicyanophenyl group), trifluoromethoxyphenyl (trifluoromethoxyphenyl group), o-, m- or p-tolyl group (tolyl group), o-, m- or p -Cumenyl group, 2,4,6-mesityl group, phenoxyphenyl group, (α,α-dimethylbenzene) phenyl ((α, α-dimethylbenzene)phenyl group), (N,N'-dimethyl)aminophenyl group ((N,N'-dimethyl)aminophenyl group), (N,N'-diphenyl)aminophenyl group ((N ,N'-diphenyl)aminophenyl group), Cyclopentadienyl, Indenyl, Naphthyl, Halonaphthyl group (for example, fluoronaphthyl group), C 1 -C 10 alkylnaphthalene Alkylnaphthyl group (for example, methylnaphthyl group), C 1 -C 10 alkoxynaphthyl group (for example, methoxynaphthyl group), anthracenyl, azulene Group, diheptatrienyl group, acenaphthylenyl group, acenaphthylenyl group, phenalenyl group, stilbene group, anthraquinolyl group, methylanthryl group, phenanthryl, tandem Benzene, pyrenyl, quinyl, ethyl-chrysenyl group, picenyl group, perylenyl group, chloroperylenyl group, pentaphenyl group , Fused pentaphenyl, tetraphenylenyl group, hexaphenyl group, hexaphenyl group, rubicenyl group, coronenyl group, trinaphthylenyl group , Heptaphenyl group (heptaphenyl group), heptatrienyl (heptalenyl group), pyranthrene (pyranthrenyl group) and zedoyl (ovalenyl group). Examples of substituted C 6 -C 60 aryl groups can be inferred based on the above-mentioned unsubstituted C 6 -C 60 aryl groups and substituted C 1 -C 60 alkyl groups. The substituted or unsubstituted C 6 -C 60 aryl group can be inferred based on the above substituted or unsubstituted C 6 -C 60 aryl group.
未經取代之C2-C60雜芳基為具有包含選自N、O、P及S之至少一雜原子作為環形成原子之至少一芳香環之單價基。未經取代之C2-C60伸雜芳基為具有包含選自N、O、P及S之至少一雜原子之至少一芳香環之二價基。關於此點,當雜芳基與伸雜芳基具有至少兩個環時,其可透過單鍵彼此融合。雜芳基與伸雜芳基中之至少一氫原子可經結合C1-C60烷基而描述於上之取代基取代。 The unsubstituted C 2 -C 60 heteroaryl group is a monovalent group having at least one aromatic ring containing at least one hetero atom selected from N, O, P, and S as a ring-forming atom. The unsubstituted C 2 -C 60 extended heteroaryl group is a divalent group having at least one aromatic ring including at least one hetero atom selected from N, O, P, and S. In this regard, when the heteroaryl group and the heteroaryl group have at least two rings, they can be fused to each other through a single bond. At least one hydrogen atom in the heteroaryl group and the heteroaryl group may be substituted by the substituent group described above in combination with the C 1 -C 60 alkyl group.
未經取代之C2-C60雜芳基之實例為吡唑基、咪唑基、噁唑基、噻唑基、三唑基、四唑基、噁二唑基、吡啶基、嗒嗪基、嘧啶基、三嗪基、咔唑基、吲哚基、喹啉基、異喹啉基、苯並咪唑基、咪唑吡啶基、咪唑嘧啶基、二苯並噻吩基、二苯並呋喃基與啡啉基。未經取代之C2-C60伸雜芳基之實例,可依據上述經取代或未經取代之 C2-C60伸芳基而推斷。 Examples of unsubstituted C 2 -C 60 heteroaryl groups are pyrazolyl, imidazolyl, oxazolyl, thiazolyl, triazolyl, tetrazolyl, oxadiazolyl, pyridyl, pyrazinyl, pyrimidine , Triazinyl, carbazolyl, indolyl, quinolinyl, isoquinolinyl, benzimidazolyl, imidazolidinyl, imidazolylpyrimidinyl, dibenzothienyl, dibenzofuranyl and morpholine base. The unsubstituted C 2 -C 60 extending Examples of the heteroaryl group may be inferred based on the above-described substituted or non-substituted C 2 -C 60 arylene group.
經取代或未經取代之C6-C60芳氧基指式-OA2(其中A2為上述經取代或未經取代之C6-C60芳基)。經取代或未經取代之C6-C60芳硫基指-SA3(其中A3為上述經取代或未經取代之C6-C60芳基)。 The substituted or unsubstituted C 6 -C 60 aryloxy group refers to the formula -OA 2 (wherein A 2 is the above substituted or unsubstituted C 6 -C 60 aryl group). The substituted or unsubstituted C 6 -C 60 arylthio group refers to -SA 3 (wherein A 3 is the above substituted or unsubstituted C 6 -C 60 aryl group).
下文中,本實施例將藉參照以下合成例與其他實例詳細描述。然而此些實例僅為說明之目的而不意圖限制本實施例之範疇。 Hereinafter, this embodiment will be described in detail by referring to the following synthesis examples and other examples. However, these examples are for illustrative purposes only and are not intended to limit the scope of this embodiment.
化合物1根據以下反應流程圖1合成:
將8.60g(20.0mmol)之中間物1-1、5.66g(20.0mmol)之中間物2-1、1.15g(1.0mmol)之四(三苯基林)鈀 (tetrakis(triphenylphosphine)palladium(0)(Pd(PPh3)4)及8.29g(60.0mmol)之K2CO3溶於50mL之THF/H2O(2:1)混合溶液,接著於70℃下攪拌所得溶液5小時。將所得混合物冷卻至室溫,接著以50mL的水與50mL的乙醚萃取三次。搜集有機層並使用硫酸鎂乾燥以蒸發溶劑。以矽膠管柱層析(silica gel column chromatography)分離並純化殘留物以獲得7.33g(產率80%)之中間物3-1。 8.60 g (20.0 mmol) of intermediate 1-1, 5.66 g (20.0 mmol) of intermediate 2-1, 1.15 g (1.0 mmol) of tetrakis(triphenylphosphine) palladium(0 ) (Pd(PPh 3 ) 4 ) and 8.29 g (60.0 mmol) of K 2 CO 3 dissolved in 50 mL of a THF/H 2 O (2:1) mixed solution, followed by stirring the resulting solution at 70° C. for 5 hours. The resulting mixture was cooled to room temperature, and then extracted three times with 50 mL of water and 50 mL of ether. The organic layer was collected and dried using magnesium sulfate to evaporate the solvent. The residue was separated and purified by silica gel column chromatography to obtain 7.33g (80% yield) of intermediate 3-1.
將4.58g(10.0mmol)之中間物3-1、2.85g(12.0mmol)之中間物4-1、0.18g(0.2mmol)之Pd2(dba)3(三(二亞苄基丙酮)二鈀[(tris(dibenzylidine acetone)dipalladium(0))])、0.04g(0.4mmol)之三叔丁基磷(tri-tert-butylphosphine(P(t-Bu)3))及1.44g(15.0mmol)之NaOtBu溶於50mL之甲苯中,並接著回流所得溶液約3小時。將所得混合物冷卻至室溫,接著以40mL的水與40mL的乙醚萃取三次。搜集有機層並使用硫酸鎂乾燥以蒸發溶劑。以矽膠管柱層析分離並純化殘留物以獲得4.80g(產率78%)之化合物1。使用質譜分析法/快速原子撞擊法(MS/FAB)與1H NMR驗證此化合物。 4.58 g (10.0 mmol) of intermediate 3-1, 2.85 g (12.0 mmol) of intermediate 4-1, 0.18 g (0.2 mmol) of Pd 2 (dba) 3 (tris(dibenzylideneacetone) di Palladium[(tris(dibenzylidine acetone)dipalladium(0))]), 0.04g (0.4mmol) of tri-tert-butylphosphine (P(t-Bu) 3 )) and 1.44g (15.0mmol) ) Of NaO t Bu was dissolved in 50 mL of toluene, and then the resulting solution was refluxed for about 3 hours. The resulting mixture was cooled to room temperature, and then extracted three times with 40 mL of water and 40 mL of ether. The organic layer was collected and dried using magnesium sulfate to evaporate the solvent. The residue was separated and purified by silica gel column chromatography to obtain 4.80 g (yield 78%) of Compound 1. This compound was verified using mass spectrometry/fast atom impact method (MS/FAB) and 1 H NMR.
C46H30FN:計算值615.24,而實測615.22 C 46 H 30 FN: calculated value 615.24, and measured 615.22
1H NMR(CDCl3,400MHz)δ(ppm)8.13-8.11(dd,1H),7.87-7.85(m,1H),7.84-7.80(m,3H),7.72-7.69(m,2H),7.67(d,1H),7.65(d,1H),7.59-7.56(m,2H),7.54-7.51(dd,1H),7.48-7.41(m,4H),7.37-7.23(m,6H),7.18-7.14(m,2H),7.09-7.06(m,1H),6.98-6.94(m,2H),6.85-6.83(dd,1H),6.79-6.75(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.13-8.11 (dd, 1H), 7.87-7.85 (m, 1H), 7.84-7.80 (m, 3H), 7.72-7.69 (m, 2H), 7.67 (d,1H),7.65(d,1H),7.59-7.56(m,2H),7.54-7.51(dd,1H),7.48-7.41(m,4H),7.37-7.23(m,6H),7.18 -7.14(m,2H),7.09-7.06(m,1H),6.98-6.94(m,2H),6.85-6.83(dd,1H),6.79-6.75(m,2H)
除了使用中間物4-3而非中間物4-1外,以與合成例1 之化合物1之備製的方法相同之方式備製4.98g之化合物3(產率80%)。使用MS/FAB與1H NMR驗證化合物3。 Except that Intermediate 4-3 was used instead of Intermediate 4-1, 4.98 g of Compound 3 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (80% yield). Compound 3 was verified using MS/FAB and 1 H NMR.
C47H30N2:計算值622.24,而實測622.23 C 47 H 30 N 2 : calculated value 622.24, and measured 622.23
1H NMR(CDCl3,400MHz)δ(ppm)7.84-7.82(m,2H),7.81(d,1H),7.78-7.76(m,1H),7.72-7.68(m,3H),7.66(d,1H),7.65(d,1H),7.63-7.59(m,2H),7.57-7.52(m,3H),7.47-7.43(m,3H),7.41-7.38(m,2H),7.37-7.27(m,6H),7.17(dd,1H),7.13-7.09(m,2H),6.99-6.95(m,1H),6.88-6.85(m,1H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.84-7.82 (m, 2H), 7.81 (d, 1H), 7.78-7.76 (m, 1H), 7.72-7.68 (m, 3H), 7.66 (d ,1H),7.65(d,1H),7.63-7.59(m,2H),7.57-7.52(m,3H),7.47-7.43(m,3H),7.41-7.38(m,2H),7.37-7.27 (m,6H),7.17(dd,1H),7.13-7.09(m,2H),6.99-6.95(m,1H),6.88-6.85(m,1H)
除了使用中間物4-4而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.86g之化合物4(產率75%)。使用MS/FAB與1H NMR驗證化合物4。 Except that Intermediate 4-4 was used instead of Intermediate 4-1, 4.86 g of Compound 4 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (75% yield). Compound 4 was verified using MS/FAB and 1 H NMR.
C49H32N2:計算值648.26,而實測648.27 C 49 H 32 N 2 : calculated value 648.26, and measured 648.27
1H NMR(CDCl3,400MHz)δ(ppm)7.86-7.82(m,2H),7.81(d,1H),7.73-7.68(m,2H),7.66(d,1H),7.65-7.52(m,3H),7.60-7.58(m,2H)7.54-7.49(m,3H),7.46-7.42(m,3H),7.40-7.28(m,8H),6.99-6.95(m,1H),6.90-6.84(m,4H),6.74-6.70(m,2H) 1 H NMR(CDCl 3 ,400MHz)δ(ppm)7.86-7.82(m,2H),7.81(d,1H),7.73-7.68(m,2H),7.66(d,1H),7.65-7.52(m , 3H), 7.60-7.58 (m, 2H) 7.54-7.49 (m, 3H), 7.46-7.42 (m, 3H), 7.40-7.28 (m, 8H), 6.99-6.95 (m, 1H), 6.90- 6.84(m,4H),6.74-6.70(m,2H)
除了使用中間物4-5而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.77g之化合物5(產率70%)。使用MS/FAB與1H NMR驗證化合物5。 Except that Intermediate 4-5 was used instead of Intermediate 4-1, 4.77 g of Compound 5 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (a yield of 70%). MS/FAB and 1 H NMR were used to verify compound 5.
C51H36FN:計算值681.28,而實測681.27 C 51 H 36 FN: calculated value 681.28, and measured 681.27
1H NMR(CDCl3,400MHz)δ(ppm)7.84-7.82(m,2H),7.80(d,1H),7.78-7.75(m,1H),7.72-7.68(m,2H),7.67(d,1H),7.65(d,1H),7.62-7.58(m,2H),7.56-7.52(m,2H),7.47-7.44(m,1H),7.38-7.27(m,6H),7.14-7.08(m,2H),6.98-6.96(m,1H),6.94-6.89(m,2H),6.85-6.83(dd,1H),6.79-6.77(m,2H),6.75(d,1H),6.73-6.70(m,2H),1.66(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.84-7.82 (m, 2H), 7.80 (d, 1H), 7.78-7.75 (m, 1H), 7.72-7.68 (m, 2H), 7.67 (d ,1H),7.65(d,1H),7.62-7.58(m,2H),7.56-7.52(m,2H),7.47-7.44(m,1H),7.38-7.27(m,6H),7.14-7.08 (m,2H),6.98-6.96(m,1H),6.94-6.89(m,2H),6.85-6.83(dd,1H),6.79-6.77(m,2H),6.75(d,1H),6.73 -6.70(m, 2H), 1.66(s, 6H)
除了使用中間物4-6而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.87g之化合物6(產率66%)。使用MS/FAB與1H NMR驗證化合物6。 Except that Intermediate 4-6 was used instead of Intermediate 4-1, 4.87 g of Compound 6 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (66% yield). Compound 6 was verified using MS/FAB and 1 H NMR.
C55H35N3:計算值737.28,而實測737.29 C 55 H 35 N 3 : calculated value 737.28, and measured 737.29
1H NMR(CDCl3,400MHz)δ(ppm)8.07-8.05(m,1H),7.86-7.83(m,2H),7.81(d,1H),7.73-7.69(m,2H),7.68-7.64(m,2H),7.62-7.58(m,2H),7.50-7.44(m,6H),7.42-7.28(m,11H),7.26-7.23(m,2H),6.99-6.96(m,1H),6.90-6.86(m,2H),6.81-6.78(dd,1H),6.73-6.69(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.07-8.05 (m, 1H), 7.86-7.83 (m, 2H), 7.81 (d, 1H), 7.73-7.69 (m, 2H), 7.68-7.64 (m,2H),7.62-7.58(m,2H),7.50-7.44(m,6H),7.42-7.28(m,11H),7.26-7.23(m,2H),6.99-6.96(m,1H) , 6.90-6.86(m, 2H), 6.81-6.78(dd, 1H), 6.73-6.69(m, 2H)
除了使用中間物4-7而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.82g之化合物7(產率71%)。使用MS/FAB與1H NMR驗證化合物7。 Except for using Intermediate 4-7 instead of Intermediate 4-1, 4.82 g of Compound 7 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (yield 71%). Compound 7 was verified using MS/FAB and 1 H NMR.
C49H30N2S:計算值678.21,而實測678.22 C 49 H 30 N 2 S: calculated value 678.21, and measured 678.22
1H NMR(CDCl3,400MHz)δ(ppm)8.15-8.13(m,1H),8.09-8.06(m,1H),7.84-7.80(m,4H),7.72-7.69(m,2H),7.68-7.64(m,2H),7.61-7.58 (m,2H),7.54-7.51(m,1H),7.47-7.41(m,2H),7.39-7.27(m,8H),7.16(d,1H),7.13-7.10(dd,1H),7.04-7.01(m,1H),6.93-6.90(m,2H),6.88-6.84(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.15-8.13 (m, 1H), 8.09-8.06 (m, 1H), 7.84-7.80 (m, 4H), 7.72-7.69 (m, 2H), 7.68 -7.64(m,2H),7.61-7.58 (m,2H),7.54-7.51(m,1H),7.47-7.41(m,2H),7.39-7.27(m,8H),7.16(d,1H) , 7.13-7.10 (dd, 1H), 7.04-7.01 (m, 1H), 6.93-6.90 (m, 2H), 6.88-6.84 (m, 2H)
除了使用中間物4-11而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.17g之化合物11(產率62%)。使用MS/FAB與1H NMR驗證化合物11。
Except that Intermediate 4-11 was used instead of Intermediate 4-1, 4.17 g of
C48H29F2NO:計算值673.22,而實測673.21 C 48 H 29 F 2 NO: calculated value 673.22, and actual measured 673.21
1H NMR(CDCl3,400MHz)δ(ppm)7.87-7.85(m,1H),7.84-7.81(m,3H),7.76-7.70(m,3H),7.68-7.66(dd,1H),7.65-7.64(m,1H),7.62-7.58(m,3H),7.55-7.50(m,3H),7.46-7.40(m,2H),7.37-7.29(m,5H),7.16-7.13(dd,1H),7.10-7.03(m,2H),6.98-6.93(m,2H),6.86-6.82(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.87-7.85 (m, 1H), 7.84-7.81 (m, 3H), 7.76-7.70 (m, 3H), 7.68-7.66 (dd, 1H), 7.65 -7.64(m,1H),7.62-7.58(m,3H),7.55-7.50(m,3H),7.46-7.40(m,2H),7.37-7.29(m,5H),7.16-7.13(dd, 1H), 7.10-7.03(m, 2H), 6.98-6.93(m, 2H), 6.86-6.82(m, 2H)
除了使用中間物4-13而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.52g之化合物13(產率79%)。使用MS/FAB與1H NMR驗證化合物13。
Except that Intermediate 4-13 was used instead of Intermediate 4-1, 4.52 g of
C43H28N2:計算值572.23,而實測572.23 C 43 H 28 N 2 : calculated value 572.23, and measured 572.23
1H NMR(CDCl3,400MHz)δ(ppm)7.84-7.82(m,2H),7.80(d,1H),773-7.70(m,2H),7.67(d,1H),7.65(d,1H),7.62-7.58(m,2H),754-7.52(dd,1H),7.47-7.43(m,2H),7.38-7.29(m,7H),7.22-7.14(m,4H),7.11-7.06(m,1H),6.97-6.95(m,1H),6.89-6.86(m,1H),6.84-6.81(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.84-7.82 (m, 2H), 7.80 (d, 1H), 773-7.70 (m, 2H), 7.67 (d, 1H), 7.65 (d, 1H ), 7.62-7.58 (m, 2H), 754-7.52 (dd, 1H), 7.47-7.43 (m, 2H), 7.38-7.29 (m, 7H), 7.22-7.14 (m, 4H), 7.11-7.06 (m,1H),6.97-6.95(m,1H),6.89-6.86(m,1H),6.84-6.81(m,2H)
除了使用中間物4-14而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.29g之化合物14(產率75%)。使用MS/FAB與1H NMR驗證化合物14。 Except that Intermediate 4-14 was used instead of Intermediate 4-1, 4.29 g of Compound 14 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (yield 75%). Compound 14 was verified using MS/FAB and 1 H NMR.
C43H28N2:計算值572.23,而實測572.24 C 43 H 28 N 2 : calculated value 572.23, and measured 572.24
1H NMR(CDCl3,400MHz)δ(ppm)7.86-7.82(m,2H),7.81(d,1H),7.73-7.68(m,2H),7.66(d,1H),7.65(d,1H),7.61-7.57(m,2H),7.54-7.49(m,1H),7.46-7.42(m,1H),7.40-7.28(m,7H),7.22-7.17(m,4H),7.10-7.06(m,1H),6.98-6.95(m,2H),6.88-6.84(m,1H),6.80-6.76(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.86-7.82 (m, 2H), 7.81 (d, 1H), 7.73-7.68 (m, 2H), 7.66 (d, 1H), 7.65 (d, 1H ), 7.61-7.57(m, 2H), 7.54-7.49(m, 1H), 7.46-7.42(m, 1H), 7.40-7.28(m, 7H), 7.22-7.17(m, 4H), 7.10-7.06 (m,1H), 6.98-6.95(m, 2H), 6.88-6.84(m, 1H), 6.80-6.76(m, 2H)
除了使用中間物4-17而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.94g之化合物17(產率73%)。使用MS/FAB與1H NMR驗證化合物17。
Except for using Intermediate 4-17 instead of Intermediate 4-1, 4.94 g of
C43H28F3N:計算值615.22,而實測615.23 C 43 H 28 F 3 N: calculated value 615.22, and measured 615.23
1H NMR(CDCl3,400MHz)δ(ppm)7.85-7.81(m,2H),7.79(d,1H),7.74-7.69(m,2H),7.67(d,1H),7.66(d,1H),7.62-7.59(m,2H),7.56-7.48(m,3H),7.43-7.41(m,1H),7.34-7.23(m,5H),7.18-7.15(m,4H),7.06-7.03(m,1H),6.97-6.95(m,2H),6.86-6.83(m,1H),6.78-6.74(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.85-7.81 (m, 2H), 7.79 (d, 1H), 7.74-7.69 (m, 2H), 7.67 (d, 1H), 7.66 (d, 1H ), 7.62-7.59(m, 2H), 7.56-7.48(m, 3H), 7.43-7.41(m, 1H), 7.34-7.23(m, 5H), 7.18-7.15(m, 4H), 7.06-7.03 (m,1H),6.97-6.95(m,2H),6.86-6.83(m,1H),6.78-6.74(m,2H)
除了使用中間物4-18而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.81g之化合物18(產率 70%)。使用MS/FAB與1H NMR驗證化合物18。 Except for using Intermediate 4-18 instead of Intermediate 4-1, 5.81 g of Compound 18 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (a yield of 70%). Compound 18 was verified using MS/FAB and 1 H NMR.
C61H42N2Si:計算值830.31,而實測830.30 C 61 H 42 N 2 Si: calculated value 830.31, and measured 830.30
1H NMR(CDCl3,400MHz)δ(ppm)7.82-7.80(m,2H),7.79(d,1H),7.73-7.68(m,2H),7.66(d,1H),7.65(d,1H),7.60-7.55(m,8H),7.52-7.49(m,1H),7.45-7.42(m,1H),7.37-7.26(m,15H),7.24-7.20(m,3H),7.16-7.14(m,1H),7.06-7.02(m,2H),6.96-6.94(m,2H),6.80-6.76(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.82-7.80 (m, 2H), 7.79 (d, 1H), 7.73-7.68 (m, 2H), 7.66 (d, 1H), 7.65 (d, 1H ), 7.60-7.55 (m, 8H), 7.52-7.49 (m, 1H), 7.45-7.42 (m, 1H), 7.37-7.26 (m, 15H), 7.24-7.20 (m, 3H), 7.16-7.14 (m,1H),7.06-7.02(m,2H),6.96-6.94(m,2H),6.80-6.76(m,2H)
除了使用中間物4-19而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製3.70g之化合物19(產率58%)。使用MS/FAB與1H NMR驗證化合物19。 Except that Intermediate 4-19 was used instead of Intermediate 4-1, 3.70 g of Compound 19 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (58% yield). Compound 19 was verified using MS/FAB and 1 H NMR.
C42H24F5N:計算值637.18,而實測637.19 C 42 H 24 F 5 N: calculated value 637.18, and actual measurement 637.19
1H NMR(CDCl3,400MHz)δ(ppm)7.85-7.83(m,2H),7.81(d,1H),7.75-7.71(m,2H),7.68(d,1H),7.66-62(m,3H),7.56-7.54(dd,1H),7.50-7.46(m,1H),7.40-7.31(m,5H),7.25-7.20(m,2H),7.12-7.09(m,1H),7.02-6.99(m,1H),6.92-6.88(m,4H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.85-7.83 (m, 2H), 7.81 (d, 1H), 7.75-7.71 (m, 2H), 7.68 (d, 1H), 7.66-62 (m , 3H), 7.56-7.54(dd, 1H), 7.50-7.46(m, 1H), 7.40-7.31(m, 5H), 7.25-7.20(m, 2H), 7.12-7.09(m, 1H), 7.02 -6.99(m,1H),6.92-6.88(m,4H)
除了使用中間物4-20而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.54g之化合物20(產率76%)。使用MS/FAB與1H NMR驗證化合物20。 Except that Intermediate 4-20 was used instead of Intermediate 4-1, 4.54 g of Compound 20 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (yield 76%). Compound 20 was verified using MS/FAB and 1 H NMR.
C44H27N3:計算值597.22,而實測597.23 C 44 H 27 N 3 : calculated value 597.22, and measured 597.23
1H NMR(CDCl3,400MHz)δ(ppm)7.83-7.81(m,2H),7.80(d,1H), 7.72-7.69(m,2H),7.67(d,1H),7.66(d,1H),7.62-7.58(m,2H),7.54-7.51(m,1H),7.47-7.43(m,1H),7.40-7.28(m,9H),7.13-7.10(m,1H),7.02-6.99(m,4H),6.89-6.85(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.83-7.81 (m, 2H), 7.80 (d, 1H), 7.72-7.69 (m, 2H), 7.67 (d, 1H), 7.66 (d, 1H ), 7.62-7.58(m, 2H), 7.54-7.51(m, 1H), 7.47-7.43(m, 1H), 7.40-7.28(m, 9H), 7.13-7.10(m, 1H), 7.02-6.99 (m,4H),6.89-6.85(m,2H)
除了使用中間物4-21而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製3.44g之化合物21(產率59%)。使用MS/FAB與1H NMR驗證化合物21。 Except for using Intermediate 4-21 instead of Intermediate 4-1, 3.44 g of Compound 21 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (yield 59%). Compound 21 was verified using MS/FAB and 1 H NMR.
C42H27F2N:計算值583.21,而實測583.22 C 42 H 27 F 2 N: calculated value 583.21, and measured 583.22
1H NMR(CDCl3,400MHz)δ(ppm)7.84-7.82(m,2H),7.81(d,1H),7.74-7.70(m,2H),7.68(d,1H),7.67(d,1H),7.64-7.61(m,2H),7.55-7.52(dd,1H),7.48-7.44(m,1H),7.37-7.30(m,5H),7.23-7.20(m,4H),7.15-7.09(m,5H),7.04-7.00(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.84-7.82 (m, 2H), 7.81 (d, 1H), 7.74-7.70 (m, 2H), 7.68 (d, 1H), 7.67 (d, 1H ), 7.64-7.61(m, 2H), 7.55-7.52(dd, 1H), 7.48-7.44(m, 1H), 7.37-7.30(m, 5H), 7.23-7.20(m, 4H), 7.15-7.09 (m,5H),7.04-7.00(m,2H)
除了使用中間物4-22而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.03g之化合物22(產率56%)。使用MS/FAB與1H NMR驗證化合物22。 Except for using Intermediate 4-22 instead of Intermediate 4-1, 4.03 g of Compound 22 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (56% yield). Compound 22 was verified using MS/FAB and 1 H NMR.
C51H33FN4:計算值720.27,而實測720.28 C 51 H 33 FN 4 : Calculated value 720.27, and measured 720.28
1H NMR(CDCl3,400MHz)δ(ppm)8.52-8.47(m,4H),7.87-7.82(m,5H),7.76-7.73(m,2H),7.70(d,1H),7.68(d,1H),7.62-7.56(m,5H),7.50-7.46(m,1H),7.44-7.31(m,7H),7.24-7.18(m,2H),7.13-7.09(m,2H),7.00-6.98(m,1H),6.85-6.82(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.52-8.47 (m, 4H), 7.87-7.82 (m, 5H), 7.76-7.73 (m, 2H), 7.70 (d, 1H), 7.68 (d ,1H),7.62-7.56(m,5H),7.50-7.46(m,1H),7.44-7.31(m,7H),7.24-7.18(m,2H),7.13-7.09(m,2H),7.00 -6.98(m,1H),6.85-6.82(m,2H)
除了使用中間物4-23而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.35g之化合物23(產率70%)。使用MS/FAB與1H NMR驗證化合物23。 Except for using Intermediate 4-23 instead of Intermediate 4-1, 5.35 g of Compound 23 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (yield 70%). Compound 23 was verified using MS/FAB and 1 H NMR.
C56H36N4:計算值764.29,而實測764.28 C 56 H 36 N 4 : calculated value 764.29, and actual measurement 764.28
1H NMR(CDCl3,400MHz)δ(ppm)7.85-7.82(m,3H),7.81-7.77(m,3H),7.74-7.70(m,2H),7.69-7.67(m,1H),7.66-7.65(m,2H),7.61-7.52(m,5H),7.47-7.30(m,12H),7.27-7.23(m,1H),7.12-7.10(m,1H),7.02-6.98(m,4H),6.93-6.91(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.85-7.82 (m, 3H), 7.81-7.77 (m, 3H), 7.74-7.70 (m, 2H), 7.69-7.67 (m, 1H), 7.66 -7.65(m,2H),7.61-7.52(m,5H),7.47-7.30(m,12H),7.27-7.23(m,1H),7.12-7.10(m,1H),7.02-6.98(m, 4H),6.93-6.91(m,2H)
除了使用中間物4-24而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.74g之化合物24(產率76%)。使用MS/FAB與1H NMR驗證化合物24。 Except that Intermediate 4-24 was used instead of Intermediate 4-1, 4.74 g of Compound 24 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (yield 76%). Compound 24 was verified using MS/FAB and 1 H NMR.
C47H32N2:計算值624.26,而實測624.25 C 47 H 32 N 2 : calculated value 624.26, and actual measurement 624.25
1H NMR(CDCl3,400MHz)δ(ppm)8.49-8.46(m,1H),7.84-7.78(m,5H),7.76-7.68(m,3H),7.67-7.64(m,3H),7.62-7.59(m,2H),7.55-7.53(m,1H),7.48-7.45(m,1H),7.39-7.28(m,6H),7.23-7.19(m,4H),7.11-7.09(m,1H),7.02-6.98(m,3H),6.90-6.86(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.49-8.46 (m, 1H), 7.84-7.78 (m, 5H), 7.76-7.68 (m, 3H), 7.67-7.64 (m, 3H), 7.62 -7.59 (m, 2H), 7.55-7.53 (m, 1H), 7.48-7.45 (m, 1H), 7.39-7.28 (m, 6H), 7.23-7.19 (m, 4H), 7.11-7.09 (m, 1H), 7.02-6.98 (m, 3H), 6.90-6.86 (m, 2H)
除了使用中間物4-25而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.93g之化合物25(產率79%)。使用MS/FAB與1H NMR驗證化合物25。 Except for using Intermediate 4-25 instead of Intermediate 4-1, 4.93 g of Compound 25 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (yield 79%). Compound 25 was verified using MS/FAB and 1 H NMR.
C47H32N2:計算值624.26,而實測624.25 C 47 H 32 N 2 : calculated value 624.26, and actual measurement 624.25
1H NMR(CDCl3,400MHz)δ(ppm)8.69(d,1H),8.46-8.42(m,1H),7.91-7.97(m,1H),7.86-7.81(m,3H),7.75-7.70(m,2H),7.69-7.66(m,2H),7.63-7.60(m,2H),7.57-7.54(m,1H),7.51-7.47(m,2H),7.40-7.29(m,7H),7.15-7.10(m,4H),6.98-6.91(m,3H),6.87-6.85(m,1H),6.82-6.78(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.69 (d, 1H), 8.46-8.42 (m, 1H), 7.91-7.97 (m, 1H), 7.86-7.81 (m, 3H), 7.75-7.70 (m,2H),7.69-7.66(m,2H),7.63-7.60(m,2H),7.57-7.54(m,1H),7.51-7.47(m,2H),7.40-7.29(m,7H) , 7.15-7.10(m, 4H), 6.98-6.91(m, 3H), 6.87-6.85(m, 1H), 6.82-6.78(m, 2H)
除了使用中間物4-26而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.99g之化合物26(產率80%)。使用MS/FAB與1H NMR驗證化合物26。 Except that Intermediate 4-26 was used instead of Intermediate 4-1, 4.99 g of Compound 26 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (80% yield). Compound 26 was verified using MS/FAB and 1 H NMR.
C47H32N2:計算值624.26,而實測624.25 C 47 H 32 N 2 : calculated value 624.26, and actual measurement 624.25
1H NMR(CDCl3,400MHz)δ(ppm)8.56-8.53(m,2H),7.85-7.82(m,2H),7.80(d,1H),7.73-7.69(m,2H),7.68-7.66(m,1H),7.65(d,1H),7.61-7.51(m,7H),7.47-7.44(m,1H),7.38-7.26(m,5H),7.18-7.13(m,4H),7.09-7.04(m,1H),6.93-6.88(m,3H),6.84-6.80(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.56-8.53 (m, 2H), 7.85-7.82 (m, 2H), 7.80 (d, 1H), 7.73-7.69 (m, 2H), 7.68-7.66 (m,1H),7.65(d,1H),7.61-7.51(m,7H),7.47-7.44(m,1H),7.38-7.26(m,5H),7.18-7.13(m,4H),7.09 -7.04(m,1H),6.93-6.88(m,3H),6.84-6.80(m,2H)
除了使用中間物4-27而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.29g之化合物27(產率66%)。使用MS/FAB與1H NMR驗證化合物27。 Except that Intermediate 4-27 was used instead of Intermediate 4-1, 4.29 g of Compound 27 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (yield 66%). Compound 27 was verified using MS/FAB and 1 H NMR.
C48H31N3:計算值649.25,而實測649.26 C 48 H 31 N 3 : calculated value 649.25, and actual measurement 649.26
1H NMR(CDCl3,400MHz)δ(ppm)8.72(d,1H),8.42-8.39(m,1H),7.95-7.92(m,1H),7.84-7.81(m,2H),7.79(d,1H),7.71-7.68(m,2H),7.66(d,1H),7.64(d,1H),7.62-7.57(m,2H),7.55-7.52(m,1H),7.49-7.44(m,2H),7.40-7.26(m,9H),7.11-7.06(m,1H),7.02-7.00(m, 2H),6.93-6.89(m,2H),6.79-6.77(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.72 (d, 1H), 8.42-8.39 (m, 1H), 7.95-7.92 (m, 1H), 7.84-7.81 (m, 2H), 7.79 (d ,1H),7.71-7.68(m,2H),7.66(d,1H),7.64(d,1H),7.62-7.57(m,2H),7.55-7.52(m,1H),7.49-7.44(m , 2H), 7.40-7.26(m, 9H), 7.11-7.06(m, 1H), 7.02-7.00(m, 2H), 6.93-6.89(m, 2H), 6.79-6.77(m, 2H)
除了使用中間物4-30而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.99g之化合物30(產率74%)。使用MS/FAB與1H NMR驗證化合物30。 Except for using Intermediate 4-30 instead of Intermediate 4-1, 4.99 g of Compound 30 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (yield 74%). Compound 30 was verified using MS/FAB and 1 H NMR.
C51H34N2:計算值674.27,而實測674.26 C 51 H 34 N 2 : calculated value 674.27, and actual measured 674.26
1H NMR(CDCl3,400MHz)δ(ppm)8.74(d,1H),8.44-8.31(m,1H),8.12-8.08(dd,1H),7.94-7.90(m,1H),7.87-7.80(m,4H),7.75-7.71(m,2H),7.68(d,1H),7.65(d,1H),7.60-7.56(m,2H),7.54-7.52(m,1H),7.49-7.41(m,5H),7.38-7.21(m,8H),7.11-7.07(m,2H),7.03-7.00(m,3H),6.87-6.85(dd,1H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.74 (d, 1H), 8.44-8.31 (m, 1H), 8.12-8.08 (dd, 1H), 7.94-7.90 (m, 1H), 7.87-7.80 (m,4H),7.75-7.71(m,2H),7.68(d,1H),7.65(d,1H),7.60-7.56(m,2H),7.54-7.52(m,1H),7.49-7.41 (m,5H),7.38-7.21(m,8H),7.11-7.07(m,2H),7.03-7.00(m,3H),6.87-6.85(dd,1H)
除了使用中間物4-31而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.98g之化合物31(產率80%)。使用MS/FAB與1H NMR驗證化合物31。 Except that Intermediate 4-31 was used instead of Intermediate 4-1, 4.98 g of Compound 31 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (80% yield). Compound 31 was verified using MS/FAB and 1 H NMR.
C47H30N2:計算值622.24,而實測622.23 C 47 H 30 N 2 : calculated value 622.24, and measured 622.23
1H NMR(CDCl3,400MHz)δ(ppm)8.05-8.01(dd,1H),7.89-7.86(m,1H),7.84-7.80(m,3H),7.74-7.69(m,2H),7.67(d,1H),7.65(d,1H),7.59-7.56(m,2H),7.53-7.50(m,1H),7.48-7.41(m,4H),7.40-7.22(m,8H),7.13-7.09(m,2H),7.05-7.03(m,1H),6.96-6.93(dd,1H),6.88-6.84(m,2H) 1 H NMR(CDCl 3 ,400MHz)δ(ppm)8.05-8.01(dd,1H),7.89-7.86(m,1H),7.84-7.80(m,3H),7.74-7.69(m,2H),7.67 (d,1H),7.65(d,1H),7.59-7.56(m,2H),7.53-7.50(m,1H),7.48-7.41(m,4H),7.40-7.22(m,8H),7.13 -7.09(m, 2H), 7.05-7.03(m, 1H), 6.96-6.93(dd, 1H), 6.88-6.84(m, 2H)
除了使用中間物4-32而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.40g之化合物32(產率73%)。使用MS/FAB與1H NMR驗證化合物32。 Except for using intermediate 4-32 instead of intermediate 4-1, 5.40 g of compound 32 was prepared in the same manner as the preparation method of compound 1 of Synthesis Example 1 (yield 73%). Compound 32 was verified using MS/FAB and 1 H NMR.
C56H40N2:計算值740.32,而實測740.31 C 56 H 40 N 2 : calculated value 740.32, and measured 740.31
1H NMR(CDCl3,400MHz)δ(ppm)8.76(d,1H),8.51-8.47(dd,1H),7.91-7.88(m,1H),7.83-7.79(m,3H),7.78-7.76(m,1H),7.73-7.69(m,2H),7.68(d,1H),7.66(d,1H),7.62-7.58(m,2H),7.56-7.51(m,2H),7.47-7.43(m,2H),7.39-7.26(m,8H),7.15-7.10(m,2H),7.06-7.04(m,1H),6.94-6.90(m,3H),6.87(d,1H),6.83-6.81(m,2H),1.67(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.76 (d, 1H), 8.51-8.47 (dd, 1H), 7.91-7.88 (m, 1H), 7.83-7.79 (m, 3H), 7.78-7.76 (m,1H),7.73-7.69(m,2H),7.68(d,1H),7.66(d,1H),7.62-7.58(m,2H),7.56-7.51(m,2H),7.47-7.43 (m, 2H), 7.39-7.26 (m, 8H), 7.15-7.10 (m, 2H), 7.06-7.04 (m, 1H), 6.94-6.90 (m, 3H), 6.87 (d, 1H), 6.83 -6.81(m, 2H), 1.67(s, 6H)
除了使用中間物4-35而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.05g之化合物35(產率67%)。使用MS/FAB與1H NMR驗證化合物35。 Except for using Intermediate 4-35 instead of Intermediate 4-1, 5.05 g of Compound 35 was prepared in the same manner as the method for preparing Compound 1 of Synthesis Example 1 (yield 67%). Compound 35 was verified using MS/FAB and 1 H NMR.
C58H38N2O:計算值778.30,而實測778.29 C 58 H 38 N 2 O: calculated value 778.30, and actual measurement 778.29
1H NMR(CDCl3,400MHz)δ(ppm)7.84-7.80(m,4H),7.78-7.76(m,1H),7.74-7.65(m,6H),7.62-7.59(m,3H),7.55-7.49(m,4H),7.46-7.40(m,3H),7.38-7.27(m,5H),7.19-7.11(m,2H),7.05(d,1H),6.87(d,1H),6.79-6.74(m,2H),1.64(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.84-7.80(m, 4H), 7.78-7.76(m, 1H), 7.74-7.65(m, 6H), 7.62-7.59(m, 3H), 7.55 -7.49(m,4H),7.46-7.40(m,3H),7.38-7.27(m,5H),7.19-7.11(m,2H),7.05(d,1H),6.87(d,1H),6.79 -6.74(m, 2H), 1.64(s, 6H)
除了使用中間物4-36而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.80g之化合物36(產率70%)。使用MS/FAB與1H NMR驗證化合物36。 Except for using Intermediate 4-36 instead of Intermediate 4-1, 5.80 g of Compound 36 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (a yield of 70%). Compound 36 was verified using MS/FAB and 1 H NMR.
C63H44N2:計算值828.35,而實測828.34 C 63 H 44 N 2 : calculated value 828.35, and measured 828.34
1H NMR(CDCl3,400MHz)δ(ppm)8.08-8.04(m,2H),7.85-7.82(m,2H),7.81(d,1H),7.77-7.75(m,1H),7.72-7.68(m,2H),7.68(d,1H),7.66(d,1H),7.62-7.58(m,2H),7.56-7.52(m,2H),7.47-7.43(m,1H),7.36-7.26(m,12H),7.15-7.10(m,4H),7.04-7.02(m,1H),6.99-6.91(m,3H),6.89(d,1H),6.85-6.81(m,2H),1.65(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.08-8.04 (m, 2H), 7.85-7.82 (m, 2H), 7.81 (d, 1H), 7.77-7.75 (m, 1H), 7.72-7.68 (m,2H),7.68(d,1H),7.66(d,1H),7.62-7.58(m,2H),7.56-7.52(m,2H),7.47-7.43(m,1H),7.36-7.26 (m,12H),7.15-7.10(m,4H),7.04-7.02(m,1H),6.99-6.91(m,3H),6.89(d,1H),6.85-6.81(m,2H),1.65 (s,6H)
除了使用中間物4-38而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.04g之化合物38(產率75%)。使用MS/FAB與1H NMR驗證化合物38。 Except that Intermediate 4-38 was used instead of Intermediate 4-1, 5.04 g of Compound 38 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (yield: 75%). Compound 38 was verified using MS/FAB and 1 H NMR.
C51H32N2:計算值672.26,而實測672.25 C 51 H 32 N 2 : calculated value 672.26, and measured 672.25
1H NMR(CDCl3,400MHz)δ(ppm)8.50-8.47(m,1H),8.16-8.12(m,1H),7.96-7.92(m,1H),7.86-7.82(m,2H),7.80(d,1H),7.73-7.69(m,4H),7.67(d,1H),7.65(d,1H),7.60-7.52(m,5H),7.47-7.41(m,2H),7.39-7.28(m,8H),7.22-7.18(m,2H),7.07-7.03(m,1H),6.97-6.95(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.50-8.47 (m, 1H), 8.16-8.12 (m, 1H), 7.96-7.92 (m, 1H), 7.86-7.82 (m, 2H), 7.80 (d,1H),7.73-7.69(m,4H),7.67(d,1H),7.65(d,1H),7.60-7.52(m,5H),7.47-7.41(m,2H),7.39-7.28 (m,8H),7.22-7.18(m,2H),7.07-7.03(m,1H),6.97-6.95(m,2H)
除了使用中間物2-42而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-42。 Except for using intermediate 2-42 instead of intermediate 2-1, intermediate 3-42 was prepared in the same manner as the preparation method of intermediate 3-1 of Synthesis Example 1.
除了使用中間物3-42與中間物4-27而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.54g之化合物42(產率65%)。使用MS/FAB與1H NMR驗證化合 物42。 Except for using Intermediate 3-42 and Intermediate 4-27 instead of Intermediate 3-1 and Intermediate 4-1, 4.54 g of the compound was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 42 (65% yield). Compound 42 was verified using MS/FAB and 1 H NMR.
C52H33N3:計算值699.27,而實測699.28 C 52 H 33 N 3 : calculated value 699.27, and actual measurement 699.28
1H NMR(CDCl3,400MHz)δ(ppm)8.78(d,1H),8.45-8.42(m,1H),8.11-8.08(m,1H),7.94-7.91(m,1H),7.89-7.86(m,1H),7.83-7.80(m,2H),7,78(d,1H),7.72-7.67(m,3H),7.65-7.62(dd,1H),7.58-7.55(m,3H),7.54-7.52(m,1H),7.48-7.43(m,2H),7.40-7.33(m,5H),7.31-7.27(m,4H),7.18-7.15(dd,1H),6.99-6.95(m,1H),6.82-6.79(m,2H),6.77-6.73(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.78 (d, 1H), 8.45-8.42 (m, 1H), 8.11-8.08 (m, 1H), 7.94-7.91 (m, 1H), 7.89-7.86 (m,1H),7.83-7.80(m,2H),7,78(d,1H),7.72-7.67(m,3H),7.65-7.62(dd,1H),7.58-7.55(m,3H) , 7.54-7.52 (m, 1H), 7.48-7.43 (m, 2H), 7.40-7.33 (m, 5H), 7.31-7.27 (m, 4H), 7.18-7.15 (dd, 1H), 6.99-6.95 ( m,1H),6.82-6.79(m,2H),6.77-6.73(m,2H)
除了使用中間物4-43而非中間物4-27外,以與合成例27之化合物42之備製的方法相同之方式備製5.24g之化合物43(產率71%)。使用MS/FAB與1H NMR驗證化合物43。 Except that Intermediate 4-43 was used instead of Intermediate 4-27, 5.24 g of Compound 43 was prepared in the same manner as in the preparation of Compound 42 of Synthesis Example 27 (yield 71%). Compound 43 was verified using MS/FAB and 1 H NMR.
C56H38N2:計算值738.30,而實測738.31 C 56 H 38 N 2 : calculated value 738.30, and actual measurement 738.31
1H NMR(CDCl3,400MHz)δ(ppm)8.10-8.08(m,1H),7.90-7.87(m,1H),7.85-7.82(m,2H),7.80(d,1H),7.78-7.75(m,1H),7.71-7.65(m,4H),7.59-7.57(m,1H),7.55-7.51(m,4H),7.46-7.42(m,1H),7.39-7.27(m,8H),7.16-7.10(m,3H),6.97-6.93(m,1H),6.89-6.86(m,2H),6.83-6.81(dd,1H),6.79(d,1H),1.66(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.10-8.08 (m, 1H), 7.90-7.87 (m, 1H), 7.85-7.82 (m, 2H), 7.80 (d, 1H), 7.78-7.75 (m,1H),7.71-7.65(m,4H),7.59-7.57(m,1H),7.55-7.51(m,4H),7.46-7.42(m,1H),7.39-7.27(m,8H) , 7.16-7.10(m, 3H), 6.97-6.93(m, 1H), 6.89-6.86(m, 2H), 6.83-6.81(dd, 1H), 6.79(d, 1H), 1.66(s, 6H)
除了使用中間物2-45而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-45。 Except for using intermediate 2-45 instead of intermediate 2-1, intermediate 3-45 was prepared in the same manner as the preparation method of intermediate 3-1 of Synthesis Example 1.
除了使用中間物3-45與中間物4-31而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.38g之化合物45(產率80%)。使用MS/FAB與1H NMR驗證化合物45。 Except for using Intermediate 3-45 and Intermediate 4-31 instead of Intermediate 3-1 and Intermediate 4-1, 5.38 g of compound was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 45 (80% yield). Compound 45 was verified using MS/FAB and 1 H NMR.
C51H32N2:計算值672.26,而實測672.27 C 51 H 32 N 2 : calculated value 672.26, and measured 672.27
1H NMR(CDCl3,400MHz)δ(ppm)8.03-8.00(m,1H),7.88-7.85(m,1H),7.84-7.79(m,5H),7.73-7.68(m,2H),7.65-7.63(m,1H),7.60(d,1H),7.55-7.37(m,9H),7.35-7.28(m,5H),7.20-7.15(m,2H),7.10-7.06(m,1H),6.97-6.92(m,1H),6.86-6.85(dd,1H),6.80-6.77(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.03-8.00 (m, 1H), 7.88-7.85 (m, 1H), 7.84-7.79 (m, 5H), 7.73-7.68 (m, 2H), 7.65 -7.63(m,1H),7.60(d,1H),7.55-7.37(m,9H),7.35-7.28(m,5H),7.20-7.15(m,2H),7.10-7.06(m,1H) ,6.97-6.92(m,1H),6.86-6.85(dd,1H),6.80-6.77(m,2H)
除了使用中間物4-48而非中間物4-31外,以與合成例29之化合物45之備製的方法相同之方式備製5.50g之化合物48(產率76%)。使用MS/FAB與1H NMR驗證化合物48。 Except for using Intermediate 4-48 instead of Intermediate 4-31, 5.50 g of Compound 48 was prepared in the same manner as the preparation method of Compound 45 of Synthesis Example 29 (yield 76%). Compound 48 was verified using MS/FAB and 1 H NMR.
C55H36N2:計算值724.29,而實測724.30 C 55 H 36 N 2 : calculated value 724.29, and measured 724.30
1H NMR(CDCl3,400MHz)δ(ppm)8.56-8.53(dd,1H),8.06-8.03(m,1H),7.85-7.78(m,6H),7.76-7.69(m,5H),7.66-7.60(m,3H),7.55-7.40(m,7H),7.36-7.32(m,5H),7.29-7.25(m,1H),7.21-7.17(m,2H),7.11-7.07(m,1H),6.99-6.94(m,1H),6.87-6.85(dd,1H),6.82-6.79(m,2H) 1 H NMR(CDCl 3 ,400MHz)δ(ppm)8.56-8.53(dd,1H),8.06-8.03(m,1H),7.85-7.78(m,6H),7.76-7.69(m,5H),7.66 -7.60(m,3H),7.55-7.40(m,7H),7.36-7.32(m,5H),7.29-7.25(m,1H),7.21-7.17(m,2H),7.11-7.07(m, 1H), 6.99-6.94(m, 1H), 6.87-6.85(dd, 1H), 6.82-6.79(m, 2H)
除了使用中間物2-51而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-51。 Except for using intermediate 2-51 instead of intermediate 2-1, intermediate 3-51 was prepared in the same manner as the preparation method of intermediate 3-1 of Synthesis Example 1.
除了使用中間物3-51與中間物4-4而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.29g之化合物51(產率66%)。使用MS/FAB與1H NMR驗證化合物51。 Except that Intermediate 3-51 and Intermediate 4-4 were used instead of Intermediate 3-1 and Intermediate 4-1, 4.29 g of the compound was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 51 (66% yield). Compound 51 was verified using MS/FAB and 1 H NMR.
C48H31N3:計算值649.25,而實測649.26 C 48 H 31 N 3 : calculated value 649.25, and actual measurement 649.26
1H NMR(CDCl3,400MHz)δ(ppm)8.50(d,1H),7.93-7.90(m,2H),7.89-7.87(m,2H),7.85(d,1H),7.84-7.81(m,1H),7.74-7.69(m,2H),7.65-7.61(m,2H),7.56-7.49(m,5H),7.46-7.37(m,6H),7.36-7.34(m,1H),7.32-7.27(m,2H),7.14-7.10(m,2H),6.99-6.94(m,2H),6.83-6.79(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.50 (d, 1H), 7.93-7.90 (m, 2H), 7.89-7.87 (m, 2H), 7.85 (d, 1H), 7.84-7.81 (m ,1H),7.74-7.69(m,2H),7.65-7.61(m,2H),7.56-7.49(m,5H),7.46-7.37(m,6H),7.36-7.34(m,1H),7.32 -7.27(m,2H),7.14-7.10(m,2H),6.99-6.94(m,2H),6.83-6.79(m,2H)
除了使用中間物4-27而非中間物4-4外,以與合成例31之化合物51之備製的方法相同之方式備製4.23g之化合物54(產率65%)。使用MS/FAB與1H NMR驗證化合物54。 Except that Intermediate 4-27 was used instead of Intermediate 4-4, 4.23 g of Compound 54 was prepared in the same manner as in the preparation of Compound 51 of Synthesis Example 31 (65% yield). Compound 54 was verified using MS/FAB and 1 H NMR.
C47H30N4:計算值650.25,而實測650.24 C 47 H 30 N 4 : calculated value 650.25, and measured 650.24
1H NMR(CDCl3,400MHz)δ(ppm)8.73(m,1H),8.55(d,1H),8.52-8.47(m,1H),7.96-7.88(m,5H),7.86(d,1H),7.84-7.81(m,1H),7.73-7.68(m,2H),7.56-7.53(m,1H),7.49-7.38(m,6H),7.36-7.28(m,5H),7.16-7.13(m,2H),7.00-6.95(m,2H),6.89-6.85(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.73 (m, 1H), 8.55 (d, 1H), 8.52-8.47 (m, 1H), 7.96-7.88 (m, 5H), 7.86 (d, 1H ), 7.84-7.81(m, 1H), 7.73-7.68(m, 2H), 7.56-7.53(m, 1H), 7.49-7.38(m, 6H), 7.36-7.28(m, 5H), 7.16-7.13 (m, 2H), 7.00-6.95(m, 2H), 6.89-6.85(m, 2H)
除了使用中間物2-57而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-57。 Except for using intermediate 2-57 instead of intermediate 2-1, intermediate 3-57 was prepared in the same manner as the preparation method of intermediate 3-1 of Synthesis Example 1.
除了使用中間物3-57與中間物4-32而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.97g之化合物57(產率67%)。使用MS/FAB與1H NMR驗證化合物57。 Except for using Intermediate 3-57 and Intermediate 4-32 instead of Intermediate 3-1 and Intermediate 4-1, 4.97 g of compound was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 57 (yield 67%). Compound 57 was verified using MS/FAB and 1 H NMR.
C55H39N3:計算值741.31,而實測741.32 C 55 H 39 N 3 : calculated value 741.31, and measured 741.32
1H NMR(CDCl3,400MHz)δ(ppm)8.77(dd,1H),8.52(d,1H),8.23-8.20(m,1H),7.93-7.90(m,1H),7.89(d,1H),7.87(d,1H),7.85-7.82(m,1H),7.78-7.75(m,1H),7.72-7.68(m,2H),7.53-7.44(m,6H),7.42-7.23(m,9H),7.14-7.09(m,2H),6.99-6.95(m,1H),6.87-6.83(m,4H),6.78(d,1H),1.63(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.77 (dd, 1H), 8.52 (d, 1H), 8.23-8.20 (m, 1H), 7.93-7.90 (m, 1H), 7.89 (d, 1H ), 7.87(d, 1H), 7.85-7.82(m, 1H), 7.78-7.75(m, 1H), 7.72-7.68(m, 2H), 7.53-7.44(m, 6H), 7.42-7.23(m ,9H),7.14-7.09(m,2H),6.99-6.95(m,1H),6.87-6.83(m,4H),6.78(d,1H),1.63(s,6H)
除了使用中間物2-58而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-58。 Except for using intermediate 2-58 instead of intermediate 2-1, intermediate 3-58 was prepared in the same manner as the preparation method of intermediate 3-1 of Synthesis Example 1.
除了使用中間物3-58與中間物4-25而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.67g之化合物58(產率81%)。使用MS/FAB與1H NMR驗證化合 物58。 Except for using Intermediate 3-58 and Intermediate 4-25 instead of Intermediate 3-1 and Intermediate 4-1, 5.67 g of compound was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 58 (yield 81%). Compound 58 was verified using MS/FAB and 1 H NMR.
C53H36N2:計算值700.29,而實測700.30 C 53 H 36 N 2 : calculated value 700.29, and actual measurement 700.30
1H NMR(CDCl3,400MHz)δ(ppm)8.74(dd,1H),8.51-8.48(m,1H),7.94-7.90(m,1H),7.83-7.77(m,5H),7.74-7.65(m,6H),7.55-7.52(m,1H),7.48-7.44(m,4H),7.38-7.25(m,7H),7.19-7.15(m,2H),7.08-7.03(m,3H),6.96-6.92(m,2H),6.86-6.83(m,1H),6.80-6.79(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.74 (dd, 1H), 8.51-8.48 (m, 1H), 7.94-7.90 (m, 1H), 7.83-7.77 (m, 5H), 7.74-7.65 (m,6H),7.55-7.52(m,1H),7.48-7.44(m,4H),7.38-7.25(m,7H),7.19-7.15(m,2H),7.08-7.03(m,3H) , 6.96-6.92(m, 2H), 6.86-6.83(m, 1H), 6.80-6.79(m, 2H)
除了使用中間物4-24而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.46g之化合物59(產率78%)。使用MS/FAB與1H NMR驗證化合物59。 Except for using Intermediate 4-24 instead of Intermediate 4-25, 5.46 g of Compound 59 was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34 (78% yield). Compound 59 was verified using MS/FAB and 1 H NMR.
C53H36N2:計算值700.29,而實測700.29 C 53 H 36 N 2 : calculated value 700.29, and actual measurement 700.29
1H NMR(CDCl3,400MHz)δ(ppm)8.58-8.54(m,1H),7.86-7.80(m,7H),7.78-7.70(m,5H),7.68-7.65(m,3H),7.54-7.51(m,1H),7.47-7.44(m,3H),7.37-7.26(m,6H),7.17-7.13(m,2H),7.09-7.07(m,1H),7.01-6.97(m,2H),6.98-6.93(m,3H),6.84-6.81(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.58-8.54 (m, 1H), 7.86-7.80 (m, 7H), 7.78-7.70 (m, 5H), 7.68-7.65 (m, 3H), 7.54 -7.51 (m, 1H), 7.47-7.44 (m, 3H), 7.37-7.26 (m, 6H), 7.17-7.13 (m, 2H), 7.09-7.07 (m, 1H), 7.01-6.97 (m, 2H), 6.98-6.93(m, 3H), 6.84-6.81(m, 2H)
除了使用中間物4-27而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.08g之化合物60(產率70%)。使用MS/FAB與1H NMR驗證化合物60。 Except that Intermediate 4-27 was used instead of Intermediate 4-25, 5.08 g of Compound 60 was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34 (yield 70%). Compound 60 was verified using MS/FAB and 1 H NMR.
C54H35N3:計算值725.28,而實測725.27 C 54 H 35 N 3 : calculated value 725.28, and measured 725.27
1H NMR(CDCl3,400MHz)δ(ppm)8.71-8.69(m,1H),8.44-8.41(m,1H),7.93-7.91(m,1H),7.84-7.78(m,5H),7.74-7.69(m,4H),7.68-7.65 (m,2H),7.55-7.52(m,1H),7.48-7.43(m,4H),7.39-7.24(m,9H),7.12-7.11(m,1H),7.03-6.99(m,2H),6.93-6.89(m,2H),6.82-6.80(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.71-8.69 (m, 1H), 8.44-8.41 (m, 1H), 7.93-7.91 (m, 1H), 7.84-7.78 (m, 5H), 7.74 -7.69(m,4H),7.68-7.65 (m,2H),7.55-7.52(m,1H),7.48-7.43(m,4H),7.39-7.24(m,9H),7.12-7.11(m, 1H), 7.03-6.99(m, 2H), 6.93-6.89(m, 2H), 6.82-6.80(m, 2H)
除了使用中間物4-32而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製6.04g之化合物61(產率74%)。使用MS/FAB與1H NMR驗證化合物61。 Except that Intermediate 4-32 was used instead of Intermediate 4-25, 6.04 g of Compound 61 was prepared in the same manner as the preparation method of Compound 58 of Synthesis Example 34 (yield 74%). Compound 61 was verified using MS/FAB and 1 H NMR.
C62H44N2:計算值816.35,而實測816.34 C 62 H 44 N 2 : calculated value 816.35, and measured 816.34
1H NMR(CDCl3,400MHz)δ(ppm)8.69-8.67(dd,1H),8.41-8.38(m,1H),7.91-7.88(m,1H),7.83-7.76(m,6H),7.74-7.68(m,4H),7.67-7.64(m,2H),7.56-7.51(m,2H),7.47-7.44(m,4H),7.37-7.25(m,8H),7.15-7.09(m,2H),6.99-6.94(m,1H),6.90-6.86(m,3H),6.83-6.79(m,2H),6.77-6.76(m,1H),1.64(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.69-8.67 (dd, 1H), 8.41-8.38 (m, 1H), 7.91-7.88 (m, 1H), 7.83-7.76 (m, 6H), 7.74 -7.68(m,4H),7.67-7.64(m,2H),7.56-7.51(m,2H),7.47-7.44(m,4H),7.37-7.25(m,8H),7.15-7.09(m, 2H), 6.99-6.94(m, 1H), 6.90-6.86(m, 3H), 6.83-6.79(m, 2H), 6.77-6.76(m, 1H), 1.64(s, 6H)
除了使用中間物4-30而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.93g之化合物62(產率79%)。使用MS/FAB與1H NMR驗證化合物62。 Except for using Intermediate 4-30 instead of Intermediate 4-25, 5.93 g of Compound 62 was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34 (yield 79%). Compound 62 was verified using MS/FAB and 1 H NMR.
C57H38N2:計算值750.30,而實測750.29 C 57 H 38 N 2 : calculated value 750.30, and actual measurement 750.29
1H NMR(CDCl3,400MHz)δ(ppm)8.51-8.48(m,2H),8.17-8.15(dd,1H),7.87-7.78(m,6H),7.74-7.65(m,6H),7.55-7.51(m,5H),7.48-7.40(m,6H),7.38-7.28(m,5H),7.23(t,1H),7.14-7.13(m,1H),7.06-7.02(m,2H),6.95-6.93(dd,1H),6.88-6.85(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.51-8.48 (m, 2H), 8.17-8.15 (dd, 1H), 7.87-7.78 (m, 6H), 7.74-7.65 (m, 6H), 7.55 -7.51(m,5H),7.48-7.40(m,6H),7.38-7.28(m,5H),7.23(t,1H),7.14-7.13(m,1H),7.06-7.02(m,2H) ,6.95-6.93(dd,1H),6.88-6.85(m,2H)
除了使用中間物4-63而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.85g之化合物63(產率78%)。使用MS/FAB與1H NMR驗證化合物63。 Except that Intermediate 4-63 was used instead of Intermediate 4-25, 5.85 g of Compound 63 was prepared in the same manner as the preparation method of Compound 58 of Synthesis Example 34 (78% yield). Compound 63 was verified using MS/FAB and 1 H NMR.
C57H38N2:計算值750.30,而實測750.31 C 57 H 38 N 2 : calculated value 750.30, and actual measurement 750.31
1H NMR(CDCl3,400MHz)δ(ppm)8.50-8.47(m,2H),8.15-8.13(dd,1H),7.86-7.77(m,6H),7.73-7.69(m,4H),7.68-7.65(m,2H),7.56-7.52(m,5H),7.49-7.39(m,6H),7.37-7.29(m,5H),7.22(t,1H),7.18-7.16(m,1H),7.11-7.07(m,2H),6.96-6.94(dd,1H),6.89-6.86(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.50-8.47 (m, 2H), 8.15-8.13 (dd, 1H), 7.86-7.77 (m, 6H), 7.73-7.69 (m, 4H), 7.68 -7.65(m, 2H), 7.56-7.52(m, 5H), 7.49-7.39(m, 6H), 7.37-7.29(m, 5H), 7.22(t, 1H), 7.18-7.16(m, 1H) ,7.11-7.07(m,2H),6.96-6.94(dd,1H),6.89-6.86(m,2H)
除了使用中間物4-48而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.40g之化合物64(產率72%)。使用MS/FAB與1H NMR驗證化合物64。 Except for using Intermediate 4-48 instead of Intermediate 4-25, 5.40 g of Compound 64 was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34 (72% yield). Compound 64 was verified using MS/FAB and 1 H NMR.
C57H38N2:計算值750.30,而實測750.31 C 57 H 38 N 2 : calculated value 750.30, and actual measurement 750.31
1H NMR(CDCl3,400MHz)δ(ppm)8.48-8.45(m,1H),8.16-8.14(dd,1H),7.87-7.82(m,3H),7.81-7.68(m,10H),7.67-7.64(m,3H),7.54-7.51(m,1H),7.48-7.40(m,6H),7.38-7.21(m,7H),7.09-7.07(m,1H),7.01-6.99(m,2H),6.95-6.94(dd,1H),6.87-6.83(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.48-8.45 (m, 1H), 8.16-8.14 (dd, 1H), 7.87-7.82 (m, 3H), 7.81-7.68 (m, 10H), 7.67 -7.64(m,3H),7.54-7.51(m,1H),7.48-7.40(m,6H),7.38-7.21(m,7H),7.09-7.07(m,1H),7.01-6.99(m, 2H), 6.95-6.94 (dd, 1H), 6.87-6.83 (m, 2H)
除了使用中間物4-31而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.38g之化合物66(產率77%)。使用MS/FAB與1H NMR驗證化合物66。 Except for using intermediate 4-31 instead of intermediate 4-25, 5.38 g of compound 66 was prepared in the same manner as the preparation method of compound 58 of Synthesis Example 34 (yield 77%). Compound 66 was verified using MS/FAB and 1 H NMR.
C53H34N2:計算值698.27,而實測698.28 C 53 H 34 N 2 : calculated value 698.27, and actual measurement 698.28
1H NMR(CDCl3,400MHz)δ(ppm)8.06-8.04(dd,1H),7.88-7.85(m,1H),7.84-7.79(m,4H),7.78-7.76(m,1H),7.74-7.69(m,4H),7.67-7.64(m,2H),7.56-7.52(m,1H),7.48-7.29(m,13H),7.22(t,1H),7.13-7.11(m,1H),7.05-7.01(m,2H),6.96-6.94(dd,1H),6.87-6.84(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.06-8.04 (dd, 1H), 7.88-7.85 (m, 1H), 7.84-7.79 (m, 4H), 7.78-7.76 (m, 1H), 7.74 -7.69(m,4H),7.67-7.64(m,2H),7.56-7.52(m,1H),7.48-7.29(m,13H),7.22(t,1H),7.13-7.11(m,1H) ,7.05-7.01(m,2H),6.96-6.94(dd,1H),6.87-6.84(m,2H)
除了使用中間物4-67而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.36g之化合物67(產率74%)。使用MS/FAB與1H NMR驗證化合物67。 Except for using Intermediate 4-67 instead of Intermediate 4-25, 5.36 g of Compound 67 was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34 (yield 74%). Compound 67 was verified using MS/FAB and 1 H NMR.
C55H36N2:計算值724.29,而實測724.30 C 55 H 36 N 2 : calculated value 724.29, and measured 724.30
1H NMR(CDCl3,400MHz)δ(ppm)7.85-7.82(m,2H),7.81-7.79(m,2H),7.78-7.76(m,1H),7.73-7.68(m,4H),7.67(d,1H),7.65(d,1H),7.60-7.57(m,2H),7.54-7.52(dd,1H),7.48-7.28(m,13H),7.26-7.22(m,2H),7.16-7.15(m,1H),7.06-7.01(m,2H),6.94-6.90(m,2H),6.87-6.84(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.85-7.82 (m, 2H), 7.81-7.79 (m, 2H), 7.78-7.76 (m, 1H), 7.73-7.68 (m, 4H), 7.67 (d,1H),7.65(d,1H),7.60-7.57(m,2H),7.54-7.52(dd,1H),7.48-7.28(m,13H),7.26-7.22(m,2H),7.16 -7.15(m,1H), 7.06-7.01(m,2H),6.94-6.90(m,2H),6.87-6.84(m,2H)
除了使用中間物4-68而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.45g之化合物68(產率78%)。使用MS/FAB與1H NMR驗證化合物68。 Except for using intermediate 4-68 instead of intermediate 4-25, 5.45 g of compound 68 was prepared in the same manner as the preparation method of compound 58 of Synthesis Example 34 (yield 78%). Compound 68 was verified using MS/FAB and 1 H NMR.
C53H34N2:計算值698.27,而實測698.28 C 53 H 34 N 2 : calculated value 698.27, and actual measurement 698.28
1H NMR(CDCl3,400MHz)δ(ppm)7.86-7.83(m,2H),7.82-7.79(m,2H),7.78-7.76(m,2H),7.74-7.68(m,4H),7.66-7.63(m,3H),7.57-7.54(m,2H),7.53-7.50(m,2H),7.47-7.43(m,3H),7.41-7.28(m,8H),7.18-7.16(m,1H),7.06-7.05(dd,1H),6.92-6.88(m,2H),6.85-6.82(m, 2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.86-7.83 (m, 2H), 7.82-7.79 (m, 2H), 7.78-7.76 (m, 2H), 7.74-7.68 (m, 4H), 7.66 -7.63 (m, 3H), 7.57-7.54 (m, 2H), 7.53-7.50 (m, 2H), 7.47-7.43 (m, 3H), 7.41-7.28 (m, 8H), 7.18-7.16 (m, 1H), 7.06-7.05(dd,1H),6.92-6.88(m,2H),6.85-6.82(m, 2H)
除了使用中間物4-70而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製3.56g之化合物70(產率53%)。使用MS/FAB與1H NMR驗證化合物70。 Except for using Intermediate 4-70 instead of Intermediate 4-25, 3.56 g of Compound 70 was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34 (yield 53%). Compound 70 was verified using MS/FAB and 1 H NMR.
C50H29N3:計算值671.24,而實測671.23 C 50 H 29 N 3 : calculated value 671.24, and measured 671.23
1H NMR(CDCl3,400MHz)δ(ppm)8.22-8.20(m,2H),7.92-7.88(m,2H),7.85-7.82(m,2H),7.80(d,1H),7.75-7.69(m,4H),7.67-7.66(dd,1H),7.65-7.63(m,2H),7.61(d,1H),7.55-7.53(dd,1H),7.49-7.42(m,7H),7.38-7.29(m,5H),7.02-6.97(m,1H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.22-8.20 (m, 2H), 7.92-7.88 (m, 2H), 7.85-7.82 (m, 2H), 7.80 (d, 1H), 7.75-7.69 (m,4H),7.67-7.66(dd,1H),7.65-7.63(m,2H),7.61(d,1H),7.55-7.53(dd,1H),7.49-7.42(m,7H),7.38 -7.29(m,5H),7.02-6.97(m,1H)
除了使用中間物4-43而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製4.97g之化合物73(產率65%)。使用MS/FAB與1H NMR驗證化合物73。 Except that Intermediate 4-43 was used instead of Intermediate 4-25, 4.97 g of Compound 73 (65% yield) was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34. Compound 73 was verified using MS/FAB and 1 H NMR.
C58H40N2:calc.764.32,and found;764.33 C 58 H 40 N 2 : calc.764.32, and found; 764.33
1H NMR(CDCl3,400MHz)δ(ppm)7.85-7.82(m,2H),7.81-7.79(m,2H),7.78-7.75(m,2H),7.73-7.68(m,4H),7.67-7.64(m,2H),7.56-7.52(m,2H),7.47-7.44(m,3H),7.39-7.27(m,8H),7.13-7.09(m,2H),7.02-7.00(m,1H),6.96-6.92(m,2H),6.86-6.84(dd,1H),6.82-6.79(m,2H),6.77(d,1H),1.65(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 7.85-7.82 (m, 2H), 7.81-7.79 (m, 2H), 7.78-7.75 (m, 2H), 7.73-7.68 (m, 4H), 7.67 -7.64(m, 2H), 7.56-7.52(m, 2H), 7.47-7.44(m, 3H), 7.39-7.27(m, 8H), 7.13-7.09(m, 2H), 7.02-7.00(m, 1H), 6.96-6.92 (m, 2H), 6.86-6.84 (dd, 1H), 6.82-6.79 (m, 2H), 6.77 (d, 1H), 1.65 (s, 6H)
除了使用中間物4-76而非中間物4-25外,以與合成例 34之化合物58之備製的方法相同之方式備製6.06g之化合物76(產率78%)。使用MS/FAB與1H NMR驗證化合物76。 Except that Intermediate 4-76 was used instead of Intermediate 4-25, 6.06 g of Compound 76 was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34 (78% yield). Compound 76 was verified using MS/FAB and 1 H NMR.
C59H40N2:計算值776.32,而實測776.32 C 59 H 40 N 2 : calculated value 776.32, and actual measurement 776.32
1H NMR(CDCl3,400MHz)δ(ppm)8.68-8.67(m,1H),8.39-8.36(m,1H),7.94-7.91(m,1H),7.84-7.80(m,3H),7.79-7.78(m,1H),7.73-7.69(m,4H),7.67-7.61(m,4H),7.55-7.38(m,10H),7.37-7.24(m,7H),7.18-7.16(m,1H),7.06-7.02(m,2H),6.91-6.88(m,2H),6.82-6.78(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.68-8.67 (m, 1H), 8.39-8.36 (m, 1H), 7.94-7.91 (m, 1H), 7.84-7.80 (m, 3H), 7.79 -7.78(m,1H),7.73-7.69(m,4H),7.67-7.61(m,4H),7.55-7.38(m,10H),7.37-7.24(m,7H),7.18-7.16(m, 1H), 7.06-7.02 (m, 2H), 6.91-6.88 (m, 2H), 6.82-6.78 (m, 2H)
除了使用中間物4-77而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.22g之化合物77(產率72%)。使用MS/FAB與1H NMR驗證化合物77。 Except that Intermediate 4-77 was used instead of Intermediate 4-25, 5.22 g of Compound 77 was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34 (yield 72%). Compound 77 was verified using MS/FAB and 1 H NMR.
C54H35N3:計算值725.28,而實測725.27 C 54 H 35 N 3 : calculated value 725.28, and measured 725.27
1H NMR(CDCl3,400MHz)δ(ppm)8.55-8.52(m,2H),7.85-7.82(m,2H),7.81-7.77(m,3H),7.74-7.70(m,4H),7.67(d,1H),7.65(d,1H),7.58-7.52(m,5H),7.47-7.44(m,3H),7.39-7.28(m,7H),7.11-7.09(m,1H),7.02-6.99(m,2H),6.93-6.89(m,2H),6.81-6.77(m,2H) 1 H NMR(CDCl 3 ,400MHz)δ(ppm)8.55-8.52(m,2H),7.85-7.82(m,2H),7.81-7.77(m,3H),7.74-7.70(m,4H),7.67 (d,1H),7.65(d,1H),7.58-7.52(m,5H),7.47-7.44(m,3H),7.39-7.28(m,7H),7.11-7.09(m,1H),7.02 -6.99(m,2H),6.93-6.89(m,2H),6.81-6.77(m,2H)
除了使用中間物4-78而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.63g之化合物78(產率75%)。使用MS/FAB與1H NMR驗證化合物78。 Except that Intermediate 4-78 was used instead of Intermediate 4-25, 5.63 g of Compound 78 was prepared in the same manner as in the preparation of Compound 58 of Synthesis Example 34 (75% yield). Compound 78 was verified using MS/FAB and 1 H NMR.
C57H38N2:計算值750.30,而實測750.29 C 57 H 38 N 2 : calculated value 750.30, and actual measurement 750.29
1H NMR(CDCl3,400MHz)δ(ppm)8.67-8.65(dd,1H),8.40-8.37(m,1H),7.95-7.92(m,1H),7.85-7.82(m,2H),7.81-7.79(m,2H),7.78-7.76(m,2H),7.74-7.68(m,4H),7.66-7.63(m,3H),7.58-7.52(m,4H),7.48-7.44(m,4H),7.37-7.25(m,8H),7.16-7.15(m,1H),7.02-7.00(dd,1H),6.95-6.91(m,2H),6.84-6.81(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.67-8.65 (dd, 1H), 8.40-8.37 (m, 1H), 7.95-7.92 (m, 1H), 7.85-7.82 (m, 2H), 7.81 -7.79(m,2H),7.78-7.76(m,2H),7.74-7.68(m,4H),7.66-7.63(m,3H),7.58-7.52(m,4H),7.48-7.44(m, 4H), 7.37-7.25(m, 8H), 7.16-7.15(m, 1H), 7.02-7.00(dd, 1H), 6.95-6.91(m, 2H), 6.84-6.81(m, 2H)
除了使用中間物4-79而非中間物4-25外,以與合成例34之化合物58之備製的方法相同之方式備製5.00g之化合物79(產率69%)。使用MS/FAB與1H NMR驗證化合物79。 Except for using intermediate 4-79 instead of intermediate 4-25, 5.00 g of compound 79 was prepared in the same manner as the preparation method of compound 58 of Synthesis Example 34 (yield 69%). Compound 79 was verified using MS/FAB and 1 H NMR.
C54H35N3:計算值725.28,而實測725.27 C 54 H 35 N 3 : calculated value 725.28, and measured 725.27
1H NMR(CDCl3,400MHz)δ(ppm)8.49-8.46(m,1H),7.84-7.77(m,7H),7.74-7.68(m,5H),7.67-7.63(m,3H),7.56-7.54(dd,1H),7.47-7.43(m,3H),7.39-7.26(m,8H),7.19-7.17(m,1H),7.03-6.99(m,2H),6.92-6.88(m,2H),6.81-6.78(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.49-8.46 (m, 1H), 7.84-7.77 (m, 7H), 7.74-7.68 (m, 5H), 7.67-7.63 (m, 3H), 7.56 -7.54(dd,1H),7.47-7.43(m,3H),7.39-7.26(m,8H),7.19-7.17(m,1H),7.03-6.99(m,2H),6.92-6.88(m, 2H), 6.81-6.78 (m, 2H)
除了使用中間物2-82而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-82。 Except for using intermediate 2-82 instead of intermediate 2-1, intermediate 3-82 was prepared in the same manner as the preparation method of intermediate 3-1 of Synthesis Example 1.
除了使用中間物3-82與中間物4-25而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.20g之化合物82(產率67%)。使用MS/FAB與1H NMR驗證化合物82。 Except for using intermediate 3-82 and intermediate 4-25 instead of intermediate 3-1 and intermediate 4-1, a compound of 5.20 g was prepared in the same manner as the preparation method of compound 1 of Synthesis Example 1 82 (yield 67%). Compound 82 was verified using MS/FAB and 1 H NMR.
C59H40N2:計算值776.32,而實測776.33 C 59 H 40 N 2 : calculated value 776.32, and actual measurement 776.33
1H NMR(CDCl3,400MHz)δ(ppm)8.68(d,1H),8.41-8.38(m,1H),7.94-7.91(m,1H),7.86-7.80(m,5H),7.74-7.64(m,10H),7.56-7.53(m,1H),7.49-7.44(m,4H),7.38-7.24(m,7H),7.13-7.09(m,2H),7.04-6.99(m,3H),6.96-6.92(m,2H),6.87-6.83(m,1H),6.81-6.78(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.68 (d, 1H), 8.41-8.38 (m, 1H), 7.94-7.91 (m, 1H), 7.86-7.80 (m, 5H), 7.74-7.64 (m,10H), 7.56-7.53 (m, 1H), 7.49-7.44 (m, 4H), 7.38-7.24 (m, 7H), 7.13-7.09 (m, 2H), 7.04-6.99 (m, 3H) , 6.96-6.92 (m, 2H), 6.87-6.83 (m, 1H), 6.81-6.78 (m, 2H)
除了使用中間物4-48而非中間物4-25外,以與合成例50之化合物82之備製的方法相同之方式備製5.58g之化合物83(產率68%)。使用MS/FAB與1H NMR驗證化合物83。 Except for using Intermediate 4-48 instead of Intermediate 4-25, 5.58 g of Compound 83 was prepared in the same manner as the preparation method of Compound 82 of Synthesis Example 50 (yield 68%). Compound 83 was verified using MS/FAB and 1 H NMR.
C63H42N2:計算值826.33,而實測826.32 C 63 H 42 N 2 : calculated value 826.33, and actual measurement 826.32
1H NMR(CDCl3,400MHz)δ(ppm)8.46-8.43(m,1H),8.17-8.14(m,1H),7.87-7.80(m,6H),7.79-7.75(m,2H),7.74-7.63(m,12H),7.56-7.54(dd,1H),7.49-7.40(m,6H),7.38-7.22(m,7H),7.16-7.14(m,1H),7.05-7.00(m,2H),6.95-6.93(dd,1H),6.85-6.82(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.46-8.43 (m, 1H), 8.17-8.14 (m, 1H), 7.87-7.80 (m, 6H), 7.79-7.75 (m, 2H), 7.74 -7.63(m,12H),7.56-7.54(dd,1H),7.49-7.40(m,6H),7.38-7.22(m,7H),7.16-7.14(m,1H),7.05-7.00(m, 2H), 6.95-6.93 (dd, 1H), 6.85-6.82 (m, 2H)
除了使用中間物2-84而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-84。 Except for using intermediate 2-84 instead of intermediate 2-1, intermediate 3-84 was prepared in the same manner as the preparation method of intermediate 3-1 of Synthesis Example 1.
除了使用中間物3-84與中間物4-30而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.90g之化合物84(產率62%)。使用MS/FAB與1H NMR驗證化合 物84。 Except for using Intermediate 3-84 and Intermediate 4-30 instead of Intermediate 3-1 and Intermediate 4-1, 4.90 g of compound was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 84 (62% yield). Compound 84 was verified using MS/FAB and 1 H NMR.
C60H42N2:計算值790.33,而實測790.32 C 60 H 42 N 2 : calculated value 790.33, and actual measurement 790.32
1H NMR(CDCl3,400MHz)δ(ppm)8.69(d,1H),8.40-8.37(m,1H),8.11-8.08(m,1H),7.93-7.90(m,2H),7.89-7.85(m,2H),7.84-7.79(m,4H),7.72-7.68(m,2H),7.62-7.59(m,2H),7.53-7.51(m,1H),7.49-7.42(m,6H),7.40-7.25(m,8H),7.13-7.11(m,1H),7.07-7.05(dd,1H),6.98-6.96(dd,1H),6.90-6.86(m,2H),6.82(d,1H),1.62(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.69 (d, 1H), 8.40-8.37 (m, 1H), 8.11-8.08 (m, 1H), 7.93-7.90 (m, 2H), 7.89-7.85 (m,2H),7.84-7.79(m,4H),7.72-7.68(m,2H),7.62-7.59(m,2H),7.53-7.51(m,1H),7.49-7.42(m,6H) , 7.40-7.25(m, 8H), 7.13-7.11(m, 1H), 7.07-7.05(dd, 1H), 6.98-6.96(dd, 1H), 6.90-6.86(m, 2H), 6.82(d, 1H), 1.62(s, 6H)
除了使用中間物4-27而非中間物4-30外,以與合成例52之化合物84之備製的方法相同之方式備製4.90g之化合物84(產率64%)。使用MS/FAB與1H NMR驗證化合物84。 Except that Intermediate 4-27 was used instead of Intermediate 4-30, 4.90 g of Compound 84 was prepared in the same manner as in the preparation of Compound 84 of Synthesis Example 52 (64% yield). Compound 84 was verified using MS/FAB and 1 H NMR.
C57H39N3:計算值765.31,而實測765.30 C 57 H 39 N 3 : calculated value 765.31, and actual measurement 765.30
1H NMR(CDCl3,400MHz)δ(ppm)8.68(d,1H),8.38-8.35(m,1H),7.95-7.92(m,2H),7.90-7.88(m,1H),7.85-7.80(m,4H),7.73-7.69(m,2H),7.63-7.60(m,2H),7.55-7.52(m,2H),7.48-7.44(m,2H),7.41-7.33(m,5H),7.32-7.25(m,4H),7.12-7.09(m,1H),7.03-6.96(m,2H),6.93-6.90(dd,1H),6.88-6.84(m,2H),6.80(d,1H),1.61(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.68 (d, 1H), 8.38-8.35 (m, 1H), 7.95-7.92 (m, 2H), 7.90-7.88 (m, 1H), 7.85-7.80 (m,4H),7.73-7.69(m,2H),7.63-7.60(m,2H),7.55-7.52(m,2H),7.48-7.44(m,2H),7.41-7.33(m,5H) , 7.32-7.25 (m, 4H), 7.12-7.09 (m, 1H), 7.03-6.96 (m, 2H), 6.93-6.90 (dd, 1H), 6.88-6.84 (m, 2H), 6.80 (d, 1H), 1.61(s, 6H)
除了使用中間物4-31而非中間物4-30外,以與合成例52之化合物84之備製的方法相同之方式備製4.73g之化合物86(產率64%)。使用MS/FAB與1H NMR驗證化合物86。 Except that Intermediate 4-31 was used instead of Intermediate 4-30, 4.73 g of Compound 86 was prepared in the same manner as in the preparation of Compound 84 of Synthesis Example 52 (64% yield). Compound 86 was verified using MS/FAB and 1 H NMR.
C56H38N2:計算值738.30,而實測738.31 C 56 H 38 N 2 : calculated value 738.30, and actual measurement 738.31
1H NMR(CDCl3,400MHz)δ(ppm)8.11-8.08(m,1H),7.94-7.91(m,1H),7.89-7.85(m,2H),7.84-7.79(m,4H),7.72-7.69(m,2H),7.62-7.59(m,2H),7.54-7.51(m,1H),7.49-7.41(m,5H),7.40-7.34(m,5H),7.32-7.25(m,3H),7.14-7.12(m,1H),7.01-6.99(m,1H),6.93-6.87(m,3H),6.85(d,1H),1.62(s,6H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.11-8.08 (m, 1H), 7.94-7.91 (m, 1H), 7.89-7.85 (m, 2H), 7.84-7.79 (m, 4H), 7.72 -7.69(m,2H),7.62-7.59(m,2H),7.54-7.51(m,1H),7.49-7.41(m,5H),7.40-7.34(m,5H),7.32-7.25(m, 3H), 7.14-7.12 (m, 1H), 7.01-6.99 (m, 1H), 6.93-6.87 (m, 3H), 6.85 (d, 1H), 1.62 (s, 6H)
除了使用中間物2-89而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-89。 Except for using intermediate 2-89 instead of intermediate 2-1, intermediate 3-89 was prepared in the same manner as the preparation method of intermediate 3-1 of Synthesis Example 1.
除了使用中間物3-89與中間物4-4而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.61g之化合物89(產率75%)。使用MS/FAB與1H NMR驗證化合物89。 Except that Intermediate 3-89 and Intermediate 4-4 were used instead of Intermediate 3-1 and Intermediate 4-1, 5.61 g of compound was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 89 (75% yield). Compound 89 was verified using MS/FAB and 1 H NMR.
C57H36N2:計算值748.29,而實測748.30 C 57 H 36 N 2 : calculated value 748.29, and actual measurement 748.30
1H NMR(CDCl3,400MHz)δ(ppm)8.25-8.19(m,2H),8.11-8.09(m,1H),8.06-8.04(m,1H),7.85-7.82(m,2H),7.81-7.80(m,1H),7.78-7.77(m,1H),7.72-7.68(m,3H),7.64-7.61(m,2H),7.59-7.55(m,3H),7.54-7.48(m,3H),7.47-7.43(m,3H),7.42-7.35(m,5H),7.34-7.27(m,3H),7.12-7.08(m,2H),7.02-6.98(m,2H),6.90-6.86(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.25-8.19 (m, 2H), 8.11-8.09 (m, 1H), 8.06-8.04 (m, 1H), 7.85-7.82 (m, 2H), 7.81 -7.80(m,1H),7.78-7.77(m,1H),7.72-7.68(m,3H),7.64-7.61(m,2H),7.59-7.55(m,3H),7.54-7.48(m, 3H), 7.47-7.43 (m, 3H), 7.42-7.35 (m, 5H), 7.34-7.27 (m, 3H), 7.12-7.08 (m, 2H), 7.02-6.98 (m, 2H), 6.90- 6.86(m,2H)
除了使用中間物2-92而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-92。 Except for using intermediate 2-92 instead of intermediate 2-1, intermediate 3-92 was prepared in the same manner as the preparation method of intermediate 3-1 of Synthesis Example 1.
除了使用中間物3-92與中間物4-27而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.61g之化合物92(產率61%)。使用MS/FAB與1H NMR驗證化合物92。 Except that Intermediate 3-92 and Intermediate 4-27 were used instead of Intermediate 3-1 and Intermediate 4-1, 4.61 g of compound was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 92 (61% yield). Compound 92 was verified using MS/FAB and 1 H NMR.
C54H33N3S:計算值755.24,而實測755.25 C 54 H 33 N 3 S: calculated value 755.24, and measured 755.25
1H NMR(CDCl3,400MHz)δ(ppm)8.70-8.68(m,1H),8.40-8.37(m,2H),8.01(d,1H),7.93-7.91(m,1H),7.88-7.86(dd,1H),7.85-7.82(m,2H),7.81-7.80(m,1H),7.78-7.76(m,1H),7.73-7.69(m,2H),7.64(d,1H)7.63-7.62(m,1H),7.54-7.51(m,1H),7.48-7.43(m,2H),7.40-7.35(m,4H),7.34-7.24(m,5H),7.13-7.12(m,1H),7.06-7.03(dd,1H),6.98-6.93(m,1H),6.92-6.84(m,4H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.70-8.68 (m, 1H), 8.40-8.37 (m, 2H), 8.01 (d, 1H), 7.93-7.91 (m, 1H), 7.88-7.86 (dd, 1H), 7.85-7.82(m, 2H), 7.81-7.80(m, 1H), 7.78-7.76(m, 1H), 7.73-7.69(m, 2H), 7.64(d, 1H) 7.63 7.62 (m, 1H), 7.54-7.51 (m, 1H), 7.48-7.43 (m, 2H), 7.40-7.35 (m, 4H), 7.34-7.24 (m, 5H), 7.13-7.12 (m, 1H) ), 7.06-7.03 (dd, 1H), 6.98-6.93 (m, 1H), 6.92-6.84 (m, 4H)
除了使用中間物2-95而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-95。 Except for using intermediate 2-95 instead of intermediate 2-1, intermediate 3-95 was prepared in the same manner as the preparation method of intermediate 3-1 of Synthesis Example 1.
除了使用中間物3-95與中間物4-30而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.74g之化合物95(產率62%)。使用MS/FAB與1H NMR驗證化合物95。 Except for using Intermediate 3-95 and Intermediate 4-30 instead of Intermediate 3-1 and Intermediate 4-1, a compound of 4.74 g was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 95 (62% yield). Compound 95 was verified using MS/FAB and 1 H NMR.
C57H36N2O:計算值764.28,而實測764.29 C 57 H 36 N 2 O: calculated value 764.28, and actual measurement 764.29
1H NMR(CDCl3,400MHz)δ(ppm)8.69-8.67(m,1H),8.41-8.38(m,1H),8.11-8.08(m,1H),8.04-8.02(m,1H),7.99-7.96(m,2H),7.94-7.91(m,1H),7.87-7.85(m,1H),7.84-7.77(m,6H),7.73-7.69(m,2H),7.55-7.52(m,1H),7.48-7.41(m,5H),7.40-7.36(m,3H),7.35-7.25(m,5H),7.10-7.04(m,2H),6.98-6.96(m,1H),6.94-6.92(dd,1H),6.88-6.85(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.69-8.67 (m, 1H), 8.41-8.38 (m, 1H), 8.11-8.08 (m, 1H), 8.04-8.02 (m, 1H), 7.99 -7.96 (m, 2H), 7.94-7.91 (m, 1H), 7.87-7.85 (m, 1H), 7.84-7.77 (m, 6H), 7.73-7.69 (m, 2H), 7.55-7.52 (m, 1H), 7.48-7.41 (m, 5H), 7.40-7.36 (m, 3H), 7.35-7.25 (m, 5H), 7.10-7.04 (m, 2H), 6.98-6.96 (m, 1H), 6.94 6.92(dd,1H),6.88-6.85(m,2H)
除了使用中間物2-97而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-97。 Except for using intermediate 2-97 instead of intermediate 2-1, intermediate 3-97 was prepared in the same manner as the preparation method of intermediate 3-1 of Synthesis Example 1.
除了使用中間物3-97與中間物4-4而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製4.96g之化合物97(產率61%)。使用MS/FAB與1H NMR驗證化合物97。 Except for using Intermediate 3-97 and Intermediate 4-4 instead of Intermediate 3-1 and Intermediate 4-1, 4.96 g of compound was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 97 (61% yield). Compound 97 was verified using MS/FAB and 1 H NMR.
C61H39N3:計算值813.31,而實測813.32 C 61 H 39 N 3 : calculated value 813.31, and measured 813.32
1H NMR(CDCl3,400MHz)δ(ppm)8.31-8.29(m,1H),7.84-7.82(m,2H),7.81-7.80(m,1H),7.77-7.74(m,1H),7.72-7.68(m,4H),7.64-7.61(m,2H),7.60-7.58(m,1H),7.54-7.47(m,7H),7.46-7.41(m,4H),7.40-7.36(m,5H),7.34-7.28(m,4H),7.24-7.22(m,1H),7.16-7.14(m,1H),7.06-7.00(m,2H),6.86-6.80(m,3H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.31-8.29 (m, 1H), 7.84-7.82 (m, 2H), 7.81-7.80 (m, 1H), 7.77-7.74 (m, 1H), 7.72 -7.68(m,4H),7.64-7.61(m,2H),7.60-7.58(m,1H),7.54-7.47(m,7H),7.46-7.41(m,4H),7.40-7.36(m, 5H), 7.34-7.28(m, 4H), 7.24-7.22(m, 1H), 7.16-7.14(m, 1H), 7.06-7.00(m, 2H), 6.86-6.80(m, 3H)
除了使用中間物4-31而非中間物4-4外,以與合成例58之化合物97之備製的方法相同之方式備製4.65g之化合物98(產率59%)。使用MS/FAB與1H NMR驗證化合物98。 Except that Intermediate 4-31 was used instead of Intermediate 4-4, 4.65 g of Compound 98 was prepared in the same manner as in the preparation of Compound 97 of Synthesis Example 58 (yield 59%). Compound 98 was verified using MS/FAB and 1 H NMR.
C59H37N3:計算值787.30,而實測787.29 C 59 H 37 N 3 : calculated value 787.30, and measured 787.29
1H NMR(CDCl3,400MHz)δ(ppm)8.32-8.30(m,1H),8.10-8.07(dd,1H),7.87-7.85(m,1H),7.84-7.80(m,2H),7.80-7.79(m,1H),7.76-7.74(m,1H),7.73-7.68(m,4H),7.61-7.58(m,1H),7.55-7.51(m,1H),7.50-7.43(m,7H),7.42-7.35(m,6H),7.34-7.23(m,6H),7.13-7.10(m,1H),7.04-7.03(dd,1H),6.94-6.91(dd,1H),6.87-6.84(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.32-8.30 (m, 1H), 8.10-8.07 (dd, 1H), 7.87-7.85 (m, 1H), 7.84-7.80 (m, 2H), 7.80 -7.79(m,1H),7.76-7.74(m,1H),7.73-7.68(m,4H),7.61-7.58(m,1H),7.55-7.51(m,1H),7.50-7.43(m, 7H), 7.42-7.35(m, 6H), 7.34-7.23(m, 6H), 7.13-7.10(m, 1H), 7.04-7.03(dd, 1H), 6.94-6.91(dd, 1H), 6.87- 6.84(m,2H)
除了使用中間物2-98而非中間物2-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-99。 Except for using intermediate 2-98 instead of intermediate 2-1, intermediate 3-99 was prepared in the same manner as the preparation method of intermediate 3-1 of Synthesis Example 1.
除了使用中間物3-99與中間物4-30而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.03g之化合物99(產率55%)。使用MS/FAB與1H NMR驗證化合物99。 Except for using Intermediate 3-99 and Intermediate 4-30 instead of Intermediate 3-1 and Intermediate 4-1, 5.03 g of the compound was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 99 (yield 55%). Compound 99 was verified using MS/FAB and 1 H NMR.
C69H45N3:計算值915.36,而實測915.35 C 69 H 45 N 3 : calculated value 915.36, and measured 915.35
1H NMR(CDCl3,400MHz)δ(ppm)8.90(s,1H),8.60-8.58(dd,1H),8.45(s,1H),8.13-8.11(dd,1H),7.94-7.91(m,1H),7.87-7.75(m,5H),7.72-7.58(m,7H),7.54-7.21(m,23),7.16-7.14(m,1H),7.03-6.99(m,2H),6.89-6.84(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.90 (s, 1H), 8.60-8.58 (dd, 1H), 8.45 (s, 1H), 8.13-8.11 (dd, 1H), 7.94-7.91 (m ,1H), 7.87-7.75(m,5H),7.72-7.58(m,7H),7.54-7.21(m,23),7.16-7.14(m,1H),7.03-6.99(m,2H),6.89 -6.84(m,2H)
除了使用中間物B37而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.71g之化合物103(產率76%)。使用MS/FAB與1H NMR驗證化合物103。 Except that Intermediate B37 was used instead of Intermediate 4-1, 5.71 g of Compound 103 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (yield 76%). Compound 103 was verified using MS/FAB and 1 H NMR.
C56H37N3:計算值751.30,實測751.28 C 56 H 37 N 3 : calculated value 751.30, actual measurement 751.28
1H NMR(CDCl3,400MHz)δ(ppm)8.76(s,2H),8.57(d,2H),8.12(d,1H),7.93(d,2H),7.87-7.65(m,9H),7.61-7.27(m,15H),7.14-7.10(m,2H),7.08-7.05(m,3H),6.98(d,1H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.76 (s, 2H), 8.57 (d, 2H), 8.12 (d, 1H), 7.93 (d, 2H), 7.87-7.65 (m, 9H), 7.61-7.27(m, 15H), 7.14-7.10(m, 2H), 7.08-7.05(m, 3H), 6.98(d, 1H)
除了使用中間物B38而非中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製5.23g之化合物104(產率72%)。使用MS/FAB與1H NMR驗證化合物104。 Except that Intermediate B38 was used instead of Intermediate 4-1, 5.23 g of Compound 104 was prepared in the same manner as the preparation method of Compound 1 of Synthesis Example 1 (72% yield). Compound 104 was verified using MS/FAB and 1 H NMR.
C53H34N4:計算值726.28,實測726.27 C 53 H 34 N 4 : calculated value 726.28, measured 726.27
1H NMR(CDCl3,400MHz)δ(ppm)8.78(s,2H),8.56(d,2H),7.94(d,2H),7.84-7.80(m,3H),7.72-7.60(m,7H),7.54-7.25(m,11H),7.12-7.08(m,5H),7.02-6.99(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.78 (s, 2H), 8.56 (d, 2H), 7.94 (d, 2H), 7.84-7.80 (m, 3H), 7.72-7.60 (m, 7H ), 7.54-7.25 (m, 11H), 7.12-7.08 (m, 5H), 7.02-6.99 (m, 2H)
除了使用中間物3-58與中間物B37而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製6.21g之化合物107(產率75%)。使用MS/FAB與1H NMR驗證化合物107。 Except that Intermediate 3-58 and Intermediate B37 were used instead of Intermediate 3-1 and Intermediate 4-1, 6.21 g of Compound 107 was prepared in the same manner as in the preparation of Compound 1 of Synthesis Example 1 ( Yield 75%). Compound 107 was verified using MS/FAB and 1 H NMR.
C62H41N3:計算值827.33,實測827.31 C 62 H 41 N 3 : calculated value 827.33, measured 827.31
1H NMR(CDCl3,400MHz)δ(ppm)8.76(s,2H),8.57(d,2H),8.11(d,1H),7.94(d,2H),7.87-7.62(m,13H),7.54-7.26(m,15H),7.12-7.10(m,3H),7.06-7.03(m,1H),6.96-6.92(m,2H) 1 H NMR (CDCl 3 , 400 MHz) δ (ppm) 8.76 (s, 2H), 8.57 (d, 2H), 8.11 (d, 1H), 7.94 (d, 2H), 7.87-7.62 (m, 13H), 7.54-7.26(m,15H), 7.12-7.10(m,3H), 7.06-7.03(m,1H),6.96-6.92(m,2H)
為製造陽極,將Corning 15Ω/cm2(1200Å)ITO玻璃基板裁成50mm x 50mm x 0.7mm之尺寸,接著於異丙醇與純水中以各超音波5分鐘,並以紫外線照射30分鐘並暴露於臭氧下。將所得玻璃基板置於真空沈積二極管(vacuum deposition diode)中。 To manufacture the anode, the Corning 15Ω/cm 2 (1200Å) ITO glass substrate was cut to a size of 50mm x 50mm x 0.7mm, followed by ultrasonic waves in isopropyl alcohol and pure water for 5 minutes, and ultraviolet irradiation for 30 minutes and Exposure to ozone. The resulting glass substrate was placed in a vacuum deposition diode.
將2-TNATA沈積於ITO玻璃基板上以於陽極上形成具有600Å厚度之電洞注入層,接著沈積4,4'-雙[N-(1-萘基)-N-苯氨基]聯苯(4,4’-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(NPS))於電洞注入層上以形成具有300Å厚度之電洞傳輸層。 2-TNATA was deposited on the ITO glass substrate to form a hole injection layer with a thickness of 600Å on the anode, followed by the deposition of 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl ( 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(NPS)) is formed on the hole injection layer to form a hole transport layer with a thickness of 300Å.
接著,9,10-二(萘-2-基)蒽(9,10-di-naphthalene-2-yl-anthracene(ADN))與4,4'-二[2-(4-(N,N-二苯胺基)-苯基)乙烯基]聯苯(4,4’-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl(DPAVBi))以98:2之重量比共沈積於電洞傳輸層上以形成具有約300Å厚度之發光層。 Next, 9,10-di-naphthalene-2-yl-anthracene (ADN)) and 4,4'-bis[2-(4-(N,N -Diphenylamino)-phenyl)vinyl]biphenyl (4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl(DPAVBi)) at a weight ratio of 98:2 Co-deposited on the hole transport layer to form a light-emitting layer with a thickness of about 300Å.
接著,沈積化合物1於發光層上以形成具有約300Å厚度之電子傳輸層,然後沈積LiF於電子傳輸層上以形成具有約10Å厚度之電子注入層。接著沈積Al於電子注入層上以形成具有約3,000Å厚度之第二電極(陰極),從而完成有機發光二極體之製造。 Next, Compound 1 is deposited on the light emitting layer to form an electron transport layer having a thickness of about 300Å, and then LiF is deposited on the electron transport layer to form an electron injection layer having a thickness of about 10Å. Then, Al is deposited on the electron injection layer to form a second electrode (cathode) having a thickness of about 3,000Å, thereby completing the manufacture of the organic light emitting diode.
<DPAVBi> <DPAVBi>
除了使用化合物4而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 4 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物14而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 14 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物23而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 23 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物25而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 25 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物27而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 27 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物31而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 31 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物32而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 32 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物42而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 42 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物48而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 48 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物58而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 58 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物60而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 60 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物62而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 62 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物66而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 66 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物70而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 70 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物77而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 77 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物82而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 82 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物86而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 86 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物97而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 97 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物25而非DPAVBi形成發光層,及Alq3而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 25 was used instead of DPAVBi to form the light-emitting layer, and Alq 3 instead of Compound 1 was used to form the electron transport layer.
除了使用化合物86而非DPAVBi形成發光層,及Alq3而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 86 was used instead of DPAVBi to form the light-emitting layer, and Alq 3 instead of Compound 1 was used to form the electron transport layer.
除了使用化合物103而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 103 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物104而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light emitting diode manufactured in the same manner as in Example 1 except that Compound 104 was used instead of Compound 1 to form the electron transport layer.
除了使用化合物107而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound 107 was used instead of Compound 1 to form the electron transport layer.
除了使用Alq3而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light emitting diode manufactured in the same manner as in Example 1 except that Alq 3 was used instead of Compound 1 to form the electron transport layer.
化合物A係根據以下反應流程圖A合成:
除了使用中間物1-A而非中間物1-1外,以與合成例1之中間物3-1之備製的方法相同之方式備製中間物3-A。 Except for using intermediate 1-A instead of intermediate 1-1, intermediate 3-A was prepared in the same manner as the preparation method of intermediate 3-1 of Synthesis Example 1.
除了使用4.24g(10mmol)之中間物3-A與2.23g(12.0mmol)之中間物4-A而非中間物3-1與中間物4-1外,以與合成例1之化合物1之備製的方法相同之方式備製3.23g之化合物A(產率63%)。 Except for using 4.24 g (10 mmol) of intermediate 3-A and 2.23 g (12.0 mmol) of intermediate 4-A instead of intermediate 3-1 and intermediate 4-1, the The preparation method prepared 3.23 g of compound A in the same way (yield 63%).
除了使用化合物A而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound A was used instead of Compound 1 to form the electron transport layer.
化合物B係根據以下反應流程圖B合成: Compound B was synthesized according to the following reaction scheme B:
除了使用中間物4-B而非中間物4-A外,以與合成比較例2之化合物A之備製的方法相同之方式備製化合物B。 Except for using intermediate 4-B instead of intermediate 4-A, compound B was prepared in the same manner as the method for preparing compound A of Comparative Example 2.
除了使用化合物B而非化合物1形成電子傳輸層外,與 實例1相同之方式製造之有機發光二極體。 In addition to using Compound B instead of Compound 1 to form the electron transport layer, and Example 1 An organic light-emitting diode manufactured in the same manner.
化合物C係根據以下反應流程圖C合成:
除了使用中間物4-C而非中間物4-A外,以與合成比較例2之化合物A之備製的方法相同之方式備製化合物C。 Except for using intermediate 4-C instead of intermediate 4-A, compound C was prepared in the same manner as the method for preparing compound A of Comparative Example 2.
除了使用化合物C而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound C was used instead of Compound 1 to form the electron transport layer.
化合物D係根據以下反應流程圖D合成:
除了使用中間物4-D而非中間物4-A外,以與合成比較例2之化合物A之備製的方法相同之方式備製化合物D。 Except for using intermediate 4-D instead of intermediate 4-A, compound D was prepared in the same manner as the method for preparing compound A of Comparative Example 2.
除了使用化合物D而非化合物1形成電子傳輸層外,與實例1相同之方式製造之有機發光二極體。 An organic light-emitting diode manufactured in the same manner as in Example 1 except that Compound D was used instead of Compound 1 to form the electron transport layer.
使用PR650(Spectroscan)光源量測單元(得自Photo Research,Inc.)實例1至實例24與比較例1至5之有機發光二極體之驅動電壓、亮度、發光顏色、效率(@50mA/cm2之電流密度)與使用壽命(@100mA/cm2)。結果呈現於以下表1。 Driving voltage, brightness, luminous color, efficiency (@50mA/cm) of organic light-emitting diodes of Examples 1 to 24 and Comparative Examples 1 to 5 using PR650 (Spectroscan) light source measurement unit (available from Photo Research, Inc.) 2 current density) and service life (@100mA/cm 2 ). The results are presented in Table 1 below.
參照表1,發現相較於比較例1至比較例5之有機發光二極體,實例1至實例19與實例22至實例24之有機發光二極體具有較低之驅動電壓、較高之亮度、較高之效率與較佳之使用壽命特性。 發現相較於比較例1之有機發光二極體,實例20至實例21之有機發光二極體具有較低之驅動電壓與較佳之使用壽命。 Referring to Table 1, it is found that the organic light-emitting diodes of Examples 1 to 19 and Examples 22 to 24 have lower driving voltage and higher brightness compared to the organic light-emitting diodes of Comparative Examples 1 to 5. , Higher efficiency and better service life characteristics. It is found that the organic light-emitting diodes of Examples 20 to 21 have a lower driving voltage and better lifespan than the organic light-emitting diodes of Comparative Example 1.
如上所述,根據實施例包含任何胺系化合物之有機發光二極體可具有低驅動電壓、高亮度、高效率與長使用壽命。 As described above, the organic light emitting diode including any amine-based compound according to the embodiment may have low driving voltage, high brightness, high efficiency, and long service life.
雖然本實施例已藉參照其例示性實施例而具體顯示與描述,其將為習知技術者所理解的是對其所進行之各種形式與細節上之改變皆未脫離附隨申請專利範圍定義之本實施例之範疇與精神。 Although this embodiment has been specifically shown and described by reference to its exemplary embodiments, it will be understood by those skilled in the art that the various forms and details of the changes it has made have not deviated from the definition of the scope of the accompanying patent application The scope and spirit of this embodiment.
10‧‧‧有機發光二極體 10‧‧‧ organic light emitting diode
11‧‧‧基板 11‧‧‧ substrate
13‧‧‧第一電極 13‧‧‧First electrode
15‧‧‧有機層 15‧‧‧ Organic layer
17‧‧‧第二電極 17‧‧‧Second electrode
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