TWI678004B - Chip scale package led - Google Patents

Abstract

The invention mainly consists of an LED die, a light-transmitting heat-conducting layer overlying the LED die, and a light-transmitting polymer layer overlying the light-transmitting heat-conducting layer to form a novel chip package-level light-emitting diode. Polar body element. According to the design of the present invention, when the LED die emits light, the light-transmitting and thermally-conductive layer transmits heat to the light-transmitting polymer layer and uniformly distributes the heat; at the same time, the light-transmitting and thermally-conductive layer also achieves heat transmission. A thermal exclusion effect on the LED die. Obviously, under the condition that the heat energy introduced into the light-transmitting polymer layer can be uniformly distributed, the yellowing phenomenon of the light-transmitting polymer layer due to excessive concentration of heat in the interior can be avoided.

Description

Chip-package-level light-emitting diode element

The present invention relates to the related technical field of light-emitting diode elements, and more particularly to a chip-package-level light-emitting diode element.

Since Edison invented the light bulb, with the advancement of technology, the light source used by humans has evolved from light bulbs to incandescent bulbs and fluorescent tubes; and further, the latest lighting technology is solid-state lighting. (Solid-state lighting, SSL) technologies, such as Light-emitting diodes (LEDs), Organic light-emitting diodes (OLEDs), and Polymer light-emitting diodes, PLED) are the products of solid-state lighting technology.

LED is a light-emitting diode widely used at present. Because of its small size and long service life, LED is widely used in human daily life. The packaging structure type of LED's electronic components is usually classified according to the characteristics such as the color of the LED, the brightness of the LED, and the size of the electronic component. Generally speaking, the packaging structure used for electronic components of ultra-high-brightness LEDs is a plastic leaded chip carrier (PLCC). The packaging structure of electronic components of small-sized LEDs is usually a quad flat no leads (QFN) package.

It is worth noting that as LED backlights are widely used in displays, tablets, and smart phones, the size of LED electronic components must be further reduced to the micron size. Mini LED, also known as "sub-millimeter light-emitting diode", was first proposed by EPISTAR Corporation. The LED has a diagonal length between 50 microns and 60 microns. Micro LED is a new generation of display technology. It is to further miniaturize the LED crystal grains so that the diagonal length of the crystal grains is less than 50 micrometers. At the same time, each of them is realized through thin film, array and individually driven light emission technologies. The pixels of the LED die are individually addressed.

Chip scale package (CSP) has been widely used in the manufacture of Mini LED. FIG. 1 is a side cross-sectional view showing a first architecture of a conventional chip-package-level LED electronic component. As shown in FIG. 1, the basic structure of the chip package-level LED electronic component 1 ′ includes: an LED die 11 ′ and a light conversion film 12 ′ overlying the LED die 11 ′, wherein the LED crystal The particle 11 'is electrically connected to a substrate 2' (for example, a PCB) with its electrode 111 '. The light conversion film 12 'may be a light-transmitting film doped with a fluorescent powder. On the other hand, as the manufacturing technology of quantum dots (QDs) becomes more mature, the light conversion film 12 'may also be a light-transmitting film doped with quantum dots.

FIG. 2 is a side cross-sectional view showing a second architecture of a conventional chip-package-level LED electronic component. Comparing FIG. 1 and FIG. 2, it can be known that the second architecture of the chip package-level LED electronic component 1 ′ further includes: a transparent silicon 13 ′, which is covered on the light conversion film 12 ′, and is used for fixing the light conversion. Membrane 12 '. On the other hand, FIG. 3 is a side cross-sectional view showing a third architecture of a conventional chip-package-level LED electronic component. Comparing FIG. 1 with FIG. 3, it can be known that the third architecture of the chip package-level LED electronic component 1 ′ includes an LED die 11 ′, a titanium dioxide protective layer 14 ′ surrounding the LED die 11 ′, and A light conversion film 12 'is disposed on the LED die 11' and the titanium dioxide protective layer 14 '.

It is worth noting that epoxy resin is most commonly used in the manufacture of this light-transmitting film. Therefore, after long-term use of the chip package-level LED electronic component 1 ', the yellowing phenomenon may occur in the light-transmitting film made of epoxy resin. It can be seen from this that it is really necessary to propose an improvement solution for the thermal yellowing phenomenon of the light-transmitting film of the chip package-level LED electronic component 1 '. In view of this, the inventor of this case has made great efforts to research and invent, and finally developed and completed a chip package-level light emitting diode device of the present invention.

The conventional technology uses a chip package level packaging (CSP) technology to directly cover at least one LED die disposed on a substrate with a light conversion film to obtain a so-called chip package level LED electronic component. However, since the light-converting film directly contacts the LED die, after a long-term use of the chip-package-level LED electronic components, the light-transmitting polymer in the light-converting film will have a yellowing phenomenon. In view of this, the main purpose of the present invention is to provide a new type of chip package-level light-emitting diode device. The structure mainly includes: an LED die, a light-transmitting heat-conducting layer overlying the LED die, And a light-transmitting polymer layer overlying the light-transmitting heat-conducting layer. According to the design of the present invention, when the LED die emits light, the light-transmitting and thermally-conductive layer transmits heat to the light-transmitting polymer layer and uniformly distributes the heat; at the same time, the light-transmitting and thermally-conductive layer also achieves heat transmission. A thermal exclusion effect on the LED die. Obviously, under the condition that the heat energy introduced into the light-transmitting polymer layer can be uniformly distributed, the yellowing phenomenon of the light-transmitting polymer layer due to excessive concentration of heat in the interior can be avoided. Similarly, in the case of long-term use of the chip package-level light emitting diode device, the heat elimination effect helps to delay or prevent the yellowing phenomenon of the light-transmitting polymer layer.

In order to achieve the above-mentioned main object of the present invention, the inventor of the present invention provides a first embodiment of the chip package-level light-emitting diode element, including: at least one LED die, having two electrodes for electrically connecting to Corresponding two electrical connection pads; a light-transmitting heat-conducting layer overlying the LED die; and a light-transmitting polymer layer overlying the light-transmitting heat-conductive layer; The refractive index of is greater than the refractive index of the light-transmitting polymer layer; wherein, when the LED die emits light, the light-transmitting heat-conducting layer uniformly distributes the heat introduced into the light-transmitting polymer layer through thermal conduction; The light-transmitting heat-conducting layer achieves a heat-removing effect on the LED die through thermal conduction.

In the first embodiment of the chip package-level light-emitting diode device, the system further includes: a protective layer made of transparent silicone, which is covered on the transparent polymer layer.

In addition, in order to achieve the above-mentioned main object of the present invention, the inventor of the present invention provides a second embodiment having the chip package-level light-emitting diode element, including: at least one LED die, having two electrodes for electricity Is connected to the corresponding two electrical connection pads; a protective layer on one side surrounds the side of the LED die; a light-transmitting heat-conducting layer is formed on the LED die and on the protective layer on the side; and The light-transmitting polymer layer is formed on the light-transmitting thermally conductive layer; wherein the refractive index of the light-transmitting and thermally conductive layer is greater than the refractive index of the light-transmitting polymer layer; and when the LED die emits light, the The light-transmitting heat-conducting layer uniformly distributes the heat introduced into the light-transmitting polymer layer through thermal conduction; at the same time, the light-transmitting heat-conducting layer achieves a heat-removing effect on the LED die through thermal conduction.

In order to more clearly describe a chip package-level light-emitting diode device provided by the present invention, the preferred embodiments of the present invention will be described in detail below with reference to the drawings.

First embodiment

Please refer to FIG. 4, which is a first side cross-sectional view showing a first embodiment of a chip package-level light emitting diode device according to the present invention. As shown in FIG. 4, the chip package-level light-emitting diode element 1 of the present invention is structurally composed of an LED die 11, a light-transmitting heat-conducting layer 12 overlying the LED die 11, and an overlying A light-transmissive polymer layer 13 is disposed on the light-transmissive thermally conductive layer 12. As is well known to component engineers familiar with LED manufacturing, the LED die 11 is usually designed to emit a short-wave color light, such as blue light, violet light, or ultraviolet light. It is worth noting that if the chip package-level light-emitting diode element 1 is designed as a blue LED element, the light-transmitting polymer layer 13 need not be covered or doped with any light-converting particles. On the other hand, if the chip package-level light-emitting diode element 1 is designed to be a red LED element, a green LED element, or a white LED element, the light-transmitting polymer layer 13 must be covered or doped with a plurality of light conversions. Particles, such as quantum dots or phosphors. On the other hand, a commonly used material for manufacturing the light-transmitting polymer layer 13 is an epoxy resin or an oxane resin. Common silicone resins include: polydimethylsiloxane (PDMS), silicone gel, silicone, and silicone rubber.

Continuing to refer to FIG. 5, it is a perspective view showing an application example of the chip package-level light emitting diode device of the present invention. As can be seen from FIG. 4 and FIG. 5, the chip package-level light-emitting diode element 1 can be arranged on an substrate 2 in an array, such as a sapphire substrate or a spinel substrate. It is worth noting that, when applied to the display field, the array-packaged chip package-level light-emitting diode element 1 will be mass transferred to another bonding substrate, such as: silicon carbide (SiC) substrate, ceramic A substrate, a polyimide substrate, a rigid printed circuit board, or a flexible printed circuit board. As shown in the figure, each LED die 11 has two electrodes 111 for electrically connecting to the electrical connection pad 21 corresponding to the substrate 2. Therefore, if the chip package-level light-emitting diode elements 1 included in the array are all white LED elements, it means that the array and the substrate 2 are used to constitute a backlight unit. On the other hand, if the chip package-level light-emitting diode elements 1 arranged in an array include red LED elements, green LED elements, and blue LED elements, it means that the array and the substrate 2 are used to constitute a display unit.

Please refer to FIG. 4 and FIG. 5 again. According to the design of the present invention, when the LED die 11 emits light, the light-transmitting heat-conducting layer 12 uniformly distributes the heat introduced into the light-transmitting polymer layer 13 through heat conduction; at the same time, the light-transmitting heat-conducting layer 12 also A heat removal effect on the LED die 11 is achieved through thermal conduction. Obviously, under the condition that the heat introduced into the light-transmitting polymer layer 13 can be uniformly distributed, the yellowing phenomenon of the light-transmitting polymer layer 13 due to excessive concentration of heat in the interior can be avoided. Similarly, in a case where the chip package-level light-emitting diode element 1 is used for a long period of time, the heat removal effect helps to delay or prevent the yellowing phenomenon of the light-transmitting polymer layer 13.

The light-transmitting heat-conducting layer 12 includes a light-transmitting polymer and at least one heat-conducting material coated or doped in the heat-conducting polymer. Wherein, the process materials of the light-transmitting polymer are, for example, polydimethylsiloxane (PDMS), poly (methyl methacrylate, PMMA), polystyrene (PS), Polyethylene terephthalate (PET), Polycarbonate (PC), Cyclo olefin copolymer (COC), cyclic block copolymer (CBC), Polylactic acid (PLA), polyimide (PI), a combination of any of the foregoing, or a combination of any two or more of the foregoing.

On the other hand, the thermally conductive material may be _{Si x Ti y O 4-z} (0.01 <x <1,0.01 <y <1, -2 <z <2), Si x Ti y O 4-z / OG, SiTiO _4-u (0 <u <1), SiO _2-v (0 <v <1), SiC, SiC / TiO ₂ composite, graphene, graphene oxide, polycrystalline alumina transparent ceramic, oxynitride Aluminum (AlON) transparent ceramics, YAG transparent ceramics, M: YAG transparent ceramics, magnesium oxide (MgO), zinc oxide (ZnO), aluminum nitride (AlN), boron nitride (BN), and silicon carbide (SiC). Wherein, the OG represents an organic molecule, for example: 2,4-pentanedione. And, the M may be any one of the following: neodymium (Nd), cerium (Ce), gadolinium (Gd), gadolinium (Dy), or gadolinium (Er). It is worth noting that, without considering the manufacturing cost, a thermally conductive material can be directly coated on the LED die 11 as the light-transmitting thermally conductive layer 12.

Please continue to refer to FIG. 6, which is a second side cross-sectional view showing a first embodiment of a chip package-level light emitting diode device according to the present invention. Compared with FIG. 4, it can be found that the chip package-level light-emitting diode element 1 of FIG. 6 further includes a buffer layer BF, which is covered on the LED die 11 and is located on the light-transmissive and heat-conductive layer 12. And the LED die 11. The buffer layer BF is also made of any one of the aforementioned thermally conductive materials. In order to improve the light emitting effect of the chip package-level light emitting diode element 1, when selecting the first thermally conductive material used to manufacture the light-transmitting thermally conductive layer 12 and the second thermally conductive material used to manufacture the buffer layer BF, the second The refractive index of the thermally conductive material must be higher than the refractive index of the first thermally conductive material. At the same time, it must also be noted that the refractive index of the light-transmitting heat-conducting layer 12 must be higher than the refractive index of the light-transmitting polymer layer 13. Common materials for manufacturing the light-transmitting polymer layer 13 are Epoxy resin and Oxane resin, and their refractive indices are 1.5-1.56 and 1.4-1.53, respectively. On the other hand, exemplary combinations of the first and second thermally conductive materials are summarized in the following table (1). Table 1) First thermally conductive material Second thermally conductive material Graphene oxide (refractive index less than 2) Si _x Ti _y O _4-z (with refractive index less than 1.7) AlON (refractive index is less than 1.8) SiTiO _4-u (refractive index is less than 1.7) YAG transparent ceramic (refractive index is less than 1.9) Graphene (refractive index is less than 1.8) ZnO (refractive index less than 2.05) Graphene oxide (refractive index less than 2)

The foregoing description indicates that the light-transmissive polymer layer 13 may be coated or doped with a plurality of light conversion particles, such as quantum dots or phosphors. The following table (2) exemplarily lists several commonly used quantum dot materials. At the same time, the relationship between the size of the quantum dots and the light color of the light-induced fluorescence can be referred to the related arrangement in the following table (3). Table 2) Quantum dot types Demonstration materials II-VI quantum dots CdSe or CdS III-V quantum dots (Al, In, Ga) P, (Al, In, Ga) As, or (Al, In, Ga) N Group II-VI quantum dots with shell-core structure CdSe / ZnS Group III-V quantum dots with shell-core structure InP / ZnS Non-spherical II-VI quantum dots with alloy structure ZnCdSeS table 3) Light-induced fluorescence Size range Blue-green light 2-7nm Green light 3-10nm Huang Guang 4-12nm Orange light 4-14nm Red light 5-20nm

On the other hand, the phosphor may be any one of the following: silicate-based phosphors, aluminate-based phosphors, phosphate-based phosphors, sulfide phosphors, nitride phosphors , Nitrogen oxide phosphor, a combination of any two of the foregoing, or a combination of any two or more of the foregoing. The following table (4) exemplarily lists several commonly used phosphor materials. Table 4) Type of fluorescent material Demonstration materials Aluminate fluorescent powder Sr ₃ (1-x) Al ₂ O ₅ Cl ₂ : 3xEu ²⁺ Silicate phosphor Ca-α-SiAlON Sr1.93-xM _x SiO ₄ : Eu _0.07 ²⁺ (M = Mg ²⁺ ) Phosphate phosphor Ca ₈ (La, R) ₂ (PO ₄ ) ₆ O ₂ : xEu ²⁺ Sulfide phosphor (Y _1-x Ce _x ) ₃ S ₂ OF ₃ Nitride phosphor β-SiAlON: Eu ²⁺ Other phosphors SrGa ₂ S ₄ : Eu ²⁺ (SGS)

The above tables (2) and (4) only list exemplary materials of the light conversion particles, but it should be noted that the technical features of the present invention are not limited to the application of specific materials of the light conversion particles. For example, the light conversion particles may also be a combination of phosphor particles and quantum dots.

Second embodiment

Please refer to FIG. 7, which is a side cross-sectional view showing a second embodiment of a chip package-level light emitting diode device according to the present invention. Comparing FIG. 7 with FIG. 4, it can be known that the second embodiment of the chip package-level light-emitting diode element 1 of the present invention further includes: a protective layer 14 overlying the light-transmitting polymer layer 13. In the manufacturing process, the protective layer 14 can be made of silicon rubber. Of course, you can also refer to FIG. 6 to add a buffer layer BF to the structure of the chip package-level light-emitting diode element 1 shown in FIG. 7.

Third embodiment

Please refer to FIG. 8, which is a side cross-sectional view showing a third embodiment of a chip package-level light emitting diode device according to the present invention. The third embodiment of the chip package-level light-emitting diode element 1 of the present invention is: an LED die 11, a side protective layer 15 surrounding the side of the LED die 11, and the LED die 11 and the A light-transmitting thermally conductive layer 12 on the side protective layer 15 and a light-transmitting polymer layer 13 formed on the light-transmitting thermally conductive layer 12. On the manufacturing process, it can be made of TiO _x (1.5 <x <2), ZnO, SnO ₂ , TiO _x -SiO ₂ (1.5 <x≤2), or TiO _x N _2-x (1 <x <2) So-called side protective layer 15. Of course, you can also refer to FIG. 6 to add a buffer layer BF to the structure of the chip package-level light-emitting diode element 1 shown in FIG. 8.

In this way, the above is a complete and clear description of all the embodiments of the chip package-level light emitting diode device of the present invention; and from the above, it is known that the present invention has the following advantages:

(1) As shown in FIG. 1, FIG. 2, and FIG. 3, the conventional technology uses a chip package level package (CSP) technology to directly cover at least one LED die 11 'disposed on the substrate 2' with light conversion. The film 12 'obtains a so-called wafer-package-level LED electronic component 1'. However, since the light conversion film 12 'directly contacts the LED die 11', after long-term use of the chip-package-level LED electronic component 1 ', the light-transmitting polymer in the light conversion film 12' may cause yellowing. In view of this, the present invention is based on an LED die 11, a light-transmitting heat-conducting layer 12 overlying the LED die 11, and a light-transmitting polymer layer 13 overlying the light-transmitting heat-conducting layer 12. Constructs a new chip package-level light-emitting diode element 1. According to the design of the present invention, when the LED die 11 emits light, the light-transmitting heat-conducting layer 12 uniformly distributes the heat introduced into the light-transmitting polymer layer 13 through heat conduction; meanwhile, the light-transmitting heat-conducting layer 12 also A heat removal effect on the LED die 11 is achieved through thermal conduction. Obviously, under the condition that the heat introduced into the light-transmitting polymer layer 13 can be uniformly distributed, the yellowing phenomenon of the light-transmitting polymer layer 13 due to excessive concentration of heat in the interior can be avoided. Similarly, in a case where the chip package-level light-emitting diode element 1 is used for a long period of time, the heat removal effect helps to delay or prevent the yellowing phenomenon of the light-transmitting polymer layer 13.

It must be emphasized that the above detailed description is a specific description of a feasible embodiment of the present invention, but this embodiment is not intended to limit the patent scope of the present invention, and any equivalent implementation or change without departing from the technical spirit of the present invention, All should be included in the patent scope of this case.

<Invention>

1‧‧‧ Wafer packaged light emitting diode device

11‧‧‧LED die

12‧‧‧Light-transmitting heat-conducting layer

13‧‧‧light-transmitting polymer layer

2‧‧‧ substrate

111‧‧‧ electrode

21‧‧‧electrical connection pad

BF‧‧‧Buffer layer

14‧‧‧ protective layer

15‧‧‧side protective layer

＜ Learning ＞

1’‧‧‧ Wafer-package-level LED electronic components

11’‧‧‧LED die

12’‧‧‧light conversion film

111’‧‧‧ electrode

2’‧‧‧ substrate

13’‧‧‧Transparent Silicone

14’‧‧‧Titanium dioxide protective layer

1 is a side cross-sectional view showing a first architecture of a conventional chip-package-level LED electronic component; FIG. 2 is a side cross-sectional view showing a second architecture of a conventional chip-package-level LED electronic component; A side cross-sectional view of a third structure of a package-level LED electronic component; FIG. 4 is a first side cross-sectional view showing a first embodiment of a chip package-level light-emitting diode device of the present invention; FIG. 5 is a view showing a chip-package level of the present invention A perspective view of an application example of a light-emitting diode element; FIG. 6 is a second side cross-sectional view showing a first embodiment of a wafer-packaged light-emitting diode element of the present invention; FIG. 7 is a view showing a wafer-packaged light-emitting diode of the present invention; A side cross-sectional view of a second embodiment of a body element; and FIG. 8 is a side cross-sectional view showing a third embodiment of a wafer-package-level light-emitting diode element of the present invention.

Claims (18)

A chip package-level light-emitting diode element includes: at least one LED die, which has two electrodes for electrically connecting to the corresponding two electrical connection pads; and a light-transmitting heat-conducting layer, which covers the LED die. A light-transmitting polymer layer overlying the light-transmitting heat-conducting layer; and a buffer layer overlying the LED die and being located between the light-transmitting heat-conducting layer and the LED die Wherein the refractive index of the light-transmitting heat-conducting layer is greater than the refractive index of the light-transmitting polymer layer; wherein, when the LED die emits light, the light-transmitting heat-conducting layer is introduced into the light-transmitting polymer through heat conduction The heat of the layer is evenly distributed. At the same time, the light-transmitting and thermally-conductive layer achieves a heat-removing effect on the LED grains through thermal conduction; wherein the refractive index of the buffer layer is greater than the refractive index of the light-transmitting and thermally conductive layer. The chip-packaged light-emitting diode device described in item 1 of the patent application scope, wherein the light-transmitting polymer layer is coated or doped with a plurality of light-converting particles. The chip-packaged light-emitting diode device described in item 1 of the patent application scope further includes: a protective layer made of transparent silicone and covering the light-transmitting polymer layer. According to the chip package-level light-emitting diode device described in item 1 of the scope of the patent application, the manufacturing materials of the light-transmitting heat-conducting layer and the buffer layer may be any of the following: Si _x Ti _y O _4-z (0.01 <x <1,0.01 <y <1, -2 <z <2), Si _x Ti _y O4 _-z / OG, SiTiO _4-u (0 <u <1), SiO _2-v (0 <v < 1), SiC, SiC / TiO ₂ composite, graphene, graphene oxide, polycrystalline alumina transparent ceramic, aluminum oxynitride (AlON) transparent ceramic, YAG transparent ceramic, M: YAG transparent ceramic, magnesium oxide, or Zinc oxide. The chip-packaged light-emitting diode device according to item 1 of the patent application scope, wherein the light-transmitting and thermally-conductive layer comprises: a light-transmitting polymer and at least one of which is coated or doped in the thermally-conductive polymer. A thermally conductive material. The chip-packaged light-emitting diode device described in the second item of the patent application scope, wherein the light conversion particle is a quantum dot, and the quantum dot may be any one of the following: a quantum dot of a group II-VI complex , Quantum dots of group III-V complexes, quantum dots of group II-VI complexes with shell-core structure, quantum dots of group III-V complexes with shell-core structure, non-spherical II with alloy structure A quantum dot of the -VI complex, a combination of any two of the foregoing, or a combination of any two or more of the foregoing. The chip-packaged light-emitting diode device according to item 2 of the scope of the patent application, wherein the light-converting particles are phosphor particles, and the phosphor particles may be any of the following: silicate-based phosphors Light powder, aluminate-based fluorescent powder, phosphate-based fluorescent powder, sulfide fluorescent powder, nitride fluorescent powder, nitrogen oxide fluorescent powder, any combination of the above, or any of the above Of combination. The chip-packaged light-emitting diode device described in item 4 of the scope of the patent application, wherein the OG is 2,4-pentanedione, and the M may be any one of the following: neodymium (Nd), Cerium (Ce), europium (Gd), europium (Dy), or europium (Er). The chip-packaged light-emitting diode device described in item 4 of the scope of patent application, wherein the light-transmitting polymer may be any one of the following: polydimethylsiloxane, polymethyl methacrylate, polybenzene Ethylene, polyethylene terephthalate, polycarbonate, cyclic olefin copolymer, cyclic block copolymer, polylactic acid, polyimide, any combination of the foregoing, or a combination of any two or more of the foregoing . The chip-packaged light-emitting diode device described in item 4 of the scope of the patent application, wherein the thermally conductive material may be any of the following: Si _x Ti _y O _4-z (0.01 <x <1,0.01 <y < 1, -2 <z <2), Si _x Ti _y O _4-z / OG, SiTiO _4-u (0 <u <1), SiO _2-v (0 <v <1), SiC, SiC / TiO ₂ Composite, Graphene, Graphene oxide (GO), polycrystalline alumina transparent ceramic, aluminum nitrate (AlON) transparent ceramic, YAG transparent ceramic, M: YAG transparent ceramic. A chip package-level light-emitting diode element includes: at least one LED die, which has two electrodes for electrically connecting to the corresponding two electrical connection pads; a protective layer on one side, which surrounds the side of the LED die A light-transmitting heat-conducting layer formed on the LED die and the side protective layer; a light-transmitting polymer layer formed on the light-transmitting heat-conducting layer; and a buffer layer covering the Above the LED die, and located between the light-transmitting heat-conducting layer and the LED die; wherein the refractive index of the light-transmitting heat-conducting layer is greater than the refractive index of the light-transmitting polymer layer; When emitting light, the light-transmitting and thermally-conductive layer uniformly distributes the heat introduced into the light-transmitting polymer layer through thermal conduction; meanwhile, the light-transmitting and thermally conductive layer achieves a heat-removing effect on the LED crystal grains through thermal conduction; among them, The refractive index of the buffer layer is greater than the refractive index of the light-transmissive and thermally conductive layer. According to the chip-packaged light-emitting diode device described in item 11 of the scope of patent application, wherein the light-transmitting polymer layer is coated or doped with a plurality of light-converting particles, and the manufacturing material of the side protective layer may be Any of the following: TiO _x (1.5 <x <2), ZnO, SnO ₂ , TiO _x -SiO ₂ (1.5 <x 2), or TiO _x N _2-x (1 <x <2). For example, the chip package-level light-emitting diode device described in item 12 of the scope of the patent application, wherein the manufacturing materials of the buffer layer and the light-transmitting heat-conducting layer can be any of the following: Si _x Ti _y O _4-z (0.01 <x <1,0.01 <y <1, -2 <z <2), Si _x Ti _y O _4-z / OG, SiTiO _4-u (0 <u <1), SiO _2-v (0 <v <1), SiC, SiC / TiO ₂ composite, Graphene, Graphene oxide (GO), polycrystalline alumina transparent ceramic, alumina nitride (AlON) transparent ceramic, YAG transparent ceramic, M: YAG transparent ceramic, zinc oxide, or magnesium oxide. The chip-packaged light-emitting diode device according to item 10 of the scope of patent application, wherein the light-transmitting and thermally-conductive layer includes: a light-transmitting polymer and at least one of which is coated or doped in the thermally-conductive polymer. A thermally conductive material. The chip-packaged light-emitting diode element according to item 11 of the scope of the patent application, wherein the light conversion particle is a quantum dot, and the quantum dot may be any one of the following: a quantum dot of a group II-VI complex , Quantum dots of group III-V complexes, quantum dots of group II-VI complexes with shell-core structure, quantum dots of group III-V complexes with shell-core structure, non-spherical II with alloy structure A quantum dot of the -VI complex, a combination of any two of the foregoing, or a combination of any two or more of the foregoing. The chip-packaged light-emitting diode device according to item 11 of the scope of the patent application, wherein the light conversion particles are phosphor particles, and the phosphor particles may be any of the following: silicate-based fluorescent Light powder, aluminate-based fluorescent powder, phosphate-based fluorescent powder, sulfide fluorescent powder, nitride fluorescent powder, nitrogen oxide fluorescent powder, any combination of the above, or any of the above Of combination. The chip-packaged light-emitting diode device according to item 14 of the scope of the patent application, wherein the OG is 2,4-pentanedione, and the M may be any one of the following: neodymium (Nd), Cerium (Ce), europium (Gd), europium (Dy), or europium (Er). According to the chip package-level light emitting diode device described in item 14 of the scope of patent application, the thermally conductive material can be any of the following: Si _x Ti _y O _4-z (0.01 <x <1,0.01 <y < 1, -2 <z <2), Si _x Ti _y O _4-z / OG, SiTiO _4-u (0 <u <1), SiO _2-v (0 <v <1), SiC, SiC / TiO ₂ Composites, Graphene, Graphene oxide (GO), polycrystalline alumina transparent ceramics, AlON transparent ceramics, YAG transparent ceramics, M: YAG transparent ceramics, zinc oxide, Or magnesium oxide.