TWI678002B - Mixing light-emitting diode structure - Google Patents

Abstract

A light emitting diode mixed light structure includes a single package, at least two light emitting diode chips, and a fluorescent layer. The corresponding wavelengths of the light intensity peaks emitted by the light-emitting diode wafers differ from each other by at least 10 nm. A fluorescent layer is overlaid on at least two light-emitting diode chips. The fluorescent layers are uniformly mixed with at least one type of fluorescent powder corresponding to a different allowed excitation band. Each fluorescent powder simultaneously absorbs the light-emitting diode chips. After the peak of the light intensity, the fluorescent layer outputs a mixed light spectrum. In the wavelength range where the color temperature value is greater than or equal to 4000K in the mixed light spectrum, the maximum value of the light intensity peak belonging to the blue light interval accounts for 75% of the integrated intensity value in the entire wavelength range.

Description

Light-emitting diode mixed light structure

The present invention relates to a light-mixing structure, in particular to a light-emitting diode light-mixing structure capable of simultaneously exciting at least two light-emitting diode wafers with a fluorescent layer.

A light-emitting diode (LED) is a semiconductor element that converts electrical energy into light energy mainly through semiconductor compounds to achieve a light-emitting effect. It has the advantages of long life, high stability, and low power consumption. Has been widely used in lighting. Traditional light-emitting diode bulbs with dimming functions are mainly connected to two types of light-emitting diodes with different color temperatures in a driving circuit, and the driving circuit controls which color temperature light-emitting diodes emit light. However, the design and manufacturing cost of the driving circuit is high, and the effect is not ideal.

At present, most light-emitting diodes use a single interval band chip to excite phosphors to generate the required color temperature, color rendering, or spectrum. Under the currently known packaging conditions, whether it is the choice of phosphors or It is because the replacement of a single band of a chip cannot achieve a good luminous effect. For example, when assessing the blue light hazard of a light source to the human body in the prior art, it is difficult to adjust the light intensity only for any band in the spectrum without affecting other parts, and it cannot reach the sun The luminous effect required for spectral trends.

For this reason, how to design a light-emitting diode mixed light structure to solve the aforementioned technical problems is an important subject studied by the inventors of the present application.

The purpose of the present invention is to provide a diode light-mixing structure which promotes a fluorescent layer having at least one permitted excitation band to be well excited by adding a plurality of light-emitting diode chips of different interval bands into a single package. In order to improve the spectral composition and achieve the purpose of obtaining the luminous effect required by the trend of the solar spectrum.

In order to achieve the purpose of previous disclosure, the light-emitting diode mixed light structure provided by the present invention includes a single package, at least two light-emitting diode chips, and a fluorescent layer; wherein at least two light-emitting diode chips are disposed on Within a single package, and the corresponding wavelengths of the light intensity peaks emitted by the light-emitting diode chips differ from each other by at least 10 nm; the fluorescent layer is arranged in the internal space of the single package, and is covered by at least two light-emitting diodes On the wafer, the fluorescent layer is uniformly mixed with at least one fluorescent powder and colloid corresponding to different allowed excitation bands. After each fluorescent powder absorbs the light intensity peaks emitted from the light emitting diode wafers at the same time, the fluorescent layer outputs one Mixed light spectrum; where the color temperature value in the mixed light spectrum is greater than or equal to 4000K, the maximum value of the light intensity peak belonging to the blue light range accounts for 75% of the integrated intensity value in the entire wavelength range.

Further, in the light-emitting diode mixed light structure, when the color temperature value of the mixed light spectrum is 4000K, the permissible quadrangular corner coordinates of the mixed light spectrum corresponding to the chromaticity coordinates of the CIE1931 specification are: (0.4006, 0.4044 ), (0.3736, 0.3874), (0.3670, 0.3578), and (0.3898, 0.3716).

Further, in the light-emitting diode mixed light structure, when the color temperature value of the mixed light spectrum is 4500K, the allowable quadrangular corner coordinates of the mixed light spectrum corresponding to the chromaticity coordinates of the CIE1931 specification are: (0.3736, 0.3874) ), (0.3515, 0.3487), (0.3551, 0.3760), and (0.3670, 0.3578).

Further, in the light-emitting diode mixed light structure, when the color temperature value of the mixed light spectrum is 5000K, the allowable quadrangular corner coordinates of the mixed light spectrum corresponding to the chromaticity coordinates of the CIE1931 specification are: (0.3551, 0.3760) ), (0.3376, 0.3616), (0.3366, 0.3369), and (0.3515, 0.3487).

Further, in the light-emitting diode mixed light structure, when the color temperature value of the mixed light spectrum is 5700K, the allowable quadrangular corner coordinates of the mixed light spectrum corresponding to the chromaticity coordinates of the CIE1931 specification are: (0.3376, 0.3616 ), (0.3207, 0.3462), (0.3222, 0.3243), and (0.3366, 0.3369).

Further, in the light-emitting diode mixed light structure, when the color temperature value of the mixed light spectrum is 6500K, the allowable quadrangular corner coordinates of the mixed light spectrum corresponding to the chromaticity coordinates of the CIE1931 specification are: (0.3207, 0.3462 ), (0.3038, 0.3308), (0.3078, 0.3117), and (0.3222, 0.3243).

Further, in the light-emitting diode mixed light structure, the corresponding wavelengths of the light intensity peaks emitted by the light-emitting diode wafers differ from each other by at least 20 nm to 30 nm.

Further, in the light-emitting diode mixed light structure, the corresponding wavelengths of the light intensity peaks emitted by the light-emitting diode wafers are different from each other by 27 nm.

Further, in the light-emitting diode mixed light structure, the average value of the maximum value and the minimum value of the wavelength range emitted by each light-emitting diode wafer differs from each other by at least 10 nm.

Further, in the light-emitting diode mixed light structure, the average value of the maximum value and the minimum value of the permitted excitation band of each phosphor is different from each other by at least 5 nm.

When using the aforementioned light-emitting diode mixed light structure, by adding a plurality of light-emitting diode wafers of different bands within a single package (the corresponding wavelengths of the light intensity peaks differ from each other by at least 10 nm), it is promoted to have at least one allowed excitation The fluorescent layer in the band is well excited to improve the spectral composition, which can make the maximum value of the light intensity peak in the blue light range (from 445nm to 465nm) in the wavelength range of color temperature greater than or equal to 4000K in the mixed light spectrum properly controlled ( For example, it accounts for 75% of the integral value of the intensity in the entire wavelength range), so that the light intensity of the blue light in the lighting device that may be harmful to the human body can be well controlled. That is, the combination of simultaneously exciting the fluorescent layer through at least two light-emitting diode wafers achieves the purpose of obtaining the light-emitting effect required to meet the trend of the solar spectrum.

In order to further understand the technology, means and effects adopted by the present invention to achieve the intended purpose, please refer to the following detailed description and accompanying drawings of the present invention. It is believed that the features and characteristics of the present invention can be obtained from this in-depth and specific understanding. However, the drawings are provided for reference and explanation only, and are not intended to limit the present invention.

The following is a description of specific embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific examples, and various details in the description of the present invention can also be modified and changed based on different viewpoints and applications without departing from the spirit of the present invention.

It should be noted that the structures, proportions, sizes, component numbers, etc. shown in the drawings in this specification are only used to match the content disclosed in the description for those familiar with this technology to understand and read, and are not intended to limit the present invention. The implementation of the conditions, so it does not have technical significance, any modification of the structure, the change of the proportional relationship or the adjustment of the size, without affecting the efficacy and the purpose that can be achieved by the present invention, should fall into this The technical content disclosed by the invention can be covered.

The technical content and detailed description of the present invention are described below with reference to the drawings.

Please refer to FIGS. 1 to 2, wherein FIG. 1 is a schematic cross-sectional view of a light-emitting diode mixed light structure according to the present invention. FIG. 2 is a schematic diagram of a light-emitting diode mixed light structure structure of the present invention.

A light-emitting diode mixed light structure provided by the present invention includes a single package 10, two light-emitting diode wafers 21, 22, and a fluorescent layer 30. The two light-emitting diode wafers 21 and 22 are respectively a first light-emitting diode wafer 21 and a second light-emitting diode wafer 22, which are arranged in a single package 10, and each light-emitting diode wafer is The corresponding wavelengths of the emitted light intensity peaks differ from each other by at least 10 nm. Further, the corresponding wavelengths of the light intensity peaks emitted by the light-emitting diode wafers may differ from each other by at least 20 nm to 30 nm. In a preferred embodiment, the corresponding wavelengths of the light intensity peaks emitted by the light-emitting diode wafers are different from each other by 27 nm, and the average values of the maximum and minimum wavelength ranges of the light-emitting diode wafers are different from each other. The phase difference is at least 10 nm. In the embodiment of the present invention, the first light-emitting diode wafer 21 and the second light-emitting diode wafer 22 are electrically connected to each other through a wire 50, and the first light-emitting diode wafer 21 and the second light-emitting diode are electrically connected to each other. The gap between the wafer 22 and the single package 10 is filled by the fluorescent layer 30.

The fluorescent layer 30 is disposed in the inner space of the single package 10 and is overlaid on at least two light-emitting diode wafers 21 and 22. The fluorescent layer 30 is uniformly mixed with at least one type of fluorescent light that corresponds to a different allowable excitation band. Powder and colloid, each fluorescent powder absorbs the light intensity peaks emitted from the light emitting diode wafers 21 and 22 at the same time, and the fluorescent layer 30 outputs a mixed light spectrum 100. Wherein, the average value of the maximum value and the minimum value of the permitted excitation band of each phosphor is different from each other by at least 5 nm. Further, in the mixed light spectrum 100, the color temperature value is greater than or equal to 4000K in the wavelength range, and the maximum value of the light intensity peak belonging to the blue light interval (for example, from about 445nm to 465nm) accounts for 75% of the integrated intensity value in the entire wavelength range. %.

As shown in FIG. 2, in the first embodiment of the present invention, the wavelength range of light emitted by the first light emitting diode wafer 21 selected is 400 nm to 420 nm, and the wavelength range of light emitted by the second light emitting diode wafer 22 is 445 nm to 465nm. In the first embodiment of the present invention, the fluorescent layer 30 is uniformly mixed with three kinds of phosphors corresponding to different allowed excitation bands. The three kinds of phosphors are a first phosphor 31, a second phosphor 32, and Third phosphor powder 33. The first phosphor 31 is a cyan phosphor that can be excited to 460 nm to 480 nm. The second phosphor 32 is a yellow phosphor that can be excited at 510 nm to 530 nm. The third phosphor 33 is a red phosphor that can be excited to 630 nm to 650 nm. The weight percentage of the colloid and each color of the fluorescent layer 30 in the fluorescent layer 30 is colloid: cyan fluorescent powder: yellow fluorescent powder: red fluorescent powder = 1 ± 0.50: 0.25 ± 0.10: 0.35 ± 0.10: 0.07 ± 0.10.

According to the American National Standards Institute's lighting specification C78.377-2008 developed in 2008, the color temperature measurement error range of the color coordinate area corresponding to the light source at the relative color temperature is established. The main color temperature measurement range is 2500K to 7000K. , Respectively corresponding to eight color coordinate blocks, the specification defines the range from warm light to black light, such as incandescent light bulbs, halogen light color temperature is 3000K, light color with red light, and fluorescent light color temperature is about 3000K to 5000K The color temperature of daylight fluorescent lamps is greater than 5000K, and the light color is fluorescent.

As shown in FIG. 3, it is a schematic diagram of the chromaticity coordinates of the light-emitting diode mixed light structure of the present invention, which shows the corner coordinates of the allowable quadrangular range corresponding to the color temperature corresponding to the CIE1931 specification in the CIE (x, y) coordinate system. The color temperature curve conforms to the Planckian locus 200. The same relative color temperature can be combined by multiple colors. As long as the light source is mixed closer to the target position of the color temperature curve, the color temperature value can be arbitrarily adjusted. When the color temperature value of the mixed light spectrum 100 in the present invention is 4000K, the allowable quadrangular corner coordinates of the mixed light spectrum 100 corresponding to the chromaticity coordinates of the CIE1931 specification are: (0.4006, 0.4044), (0.3736, 0.3874), (0.3670, 0.3578) and (0.3898, 0.3716). When the color temperature value of the mixed light spectrum 100 according to the present invention is 4500K, the allowable quadrangular corner coordinates of the mixed light spectrum 100 corresponding to the chromaticity coordinates of the CIE1931 specification are: (0.3736, 0.3874), (0.3515, 0.3487), (0.3551) , 0.3760) and (0.3670, 0.3578). When the color temperature value of the mixed light spectrum 100 according to the present invention is 5000K, the allowable quadrilateral corner coordinates of the mixed light spectrum 100 corresponding to the chromaticity coordinates of the CIE1931 specification are: (0.3551, 0.3760), (0.3376, 0.3616), (0.3366) , 0.3369) and (0.3515, 0.3487). When the color temperature value of the mixed light spectrum 100 according to the present invention is 5700K, the allowable quadrangular corner coordinates of the mixed light spectrum 100 corresponding to the chromaticity coordinates of the CIE1931 specification are: (0.3376, 0.3616), (0.3207, 0.3462), (0.3222) , 0.3243) and (0.3366, 0.3369).

As shown in FIG. 4, it is a schematic spectrum diagram of the first embodiment of the light-emitting diode mixed light structure of the present invention. It can be seen that the curve of the mixed light spectrum 100 formed by its excitation and the solar light spectrum of the color temperature clearly shows that the trend of each band in the range of visible light (for example, from about 400 nm to 780 nm) is the same.

In the second embodiment of the present invention, the wavelength range of light emitted by the first light emitting diode wafer 21 is 445 nm to 465 nm, and the wavelength range of the light emitted by the second light emitting diode wafer 22 is 470 nm to 490 nm. In the second embodiment of the present invention, the fluorescent layer 30 uniformly mixes three kinds of fluorescent powders corresponding to different allowed excitation bands. The three kinds of fluorescent powders are the first fluorescent powder 31, the second fluorescent powder 32, and Third phosphor powder 33. The first phosphor 31 is a first yellow phosphor that can be excited from 510 nm to 530 nm. The second phosphor 32 is a second yellow phosphor that can be excited to 530 nm to 550 nm. The third phosphor 33 is a red phosphor that can be excited to 630 nm to 650 nm. The weight percentage of the colloid and the phosphors in the fluorescent layer 30 is colloid: the first yellow phosphor: the second yellow phosphor: the red phosphor = 1 ± 0.50: 0.3 ± 0.10: 0.2 ± 0.10: 0.05 ± 0.10.

As shown in FIG. 5, it is a schematic spectrum diagram of the second embodiment of the light-emitting diode mixed light structure of the present invention. It can be seen that the curve of the mixed light spectrum 100 formed by its excitation can be clearly seen that although there are wafers used in the wavelength range of 445nm to 465nm, the light intensity peaks produced by them are significantly reduced compared with ordinary white light-emitting diodes. 25%, can achieve the effect of reducing the energy of a specific band.

When using the aforementioned light-emitting diode mixed light structure, by adding a plurality of light-emitting diode wafers 21 and 22 in different bands within a single package 10 (the corresponding wavelengths of the light intensity peaks differ from each other by at least 10 nm), the At least one fluorescent layer 30 that allows the excitation band to be well excited to improve the spectral composition can make the light in the mixed light spectrum 100 with a color temperature value greater than or equal to 4000K in the wavelength range of blue light (for example, from about 445nm to 465nm) The maximum value of the intensity peak is appropriately controlled (for example, it accounts for 75% of the integral value of the intensity in the entire wavelength range), so that the light intensity of the blue light in the lighting device that may be harmful to the human body can be well controlled. That is, the combination of at least two light-emitting diode wafers 21 and 22 that excite the fluorescent layer 30 at the same time achieves the purpose of obtaining the light-emitting effect required to meet the trend of the solar spectrum.

The above are only detailed descriptions and drawings of the preferred embodiments of the present invention, but the features of the present invention are not limited thereto, and are not intended to limit the present invention. The scope of the present invention shall be in the scope of the following patent applications. For the purpose of this application, all embodiments that are within the spirit of the scope of the present invention and similar changes should be included in the scope of the present invention. Anyone skilled in the art can easily consider the changes or Modifications can be covered by the patent scope of the following case.

10‧‧‧ single package

21‧‧‧The first light-emitting diode chip

22‧‧‧Second light emitting diode chip

30‧‧‧ fluorescent layer

31‧‧‧First fluorescent powder

32‧‧‧Second fluorescent powder

33‧‧‧Third fluorescent powder

50‧‧‧ lead

100‧‧‧ mixed light spectrum

200‧‧‧Purkink Blackbody Projection Trajectory Line

1 is a schematic cross-sectional view of a light-emitting diode light-mixing structure of the present invention;

2 is a schematic diagram of a light-emitting diode mixed light structure structure of the present invention;

3 is a schematic diagram of chromaticity coordinates of a light-emitting diode mixed light structure according to the present invention;

4 is a schematic spectrum diagram of a first embodiment of a light-emitting diode mixed light structure according to the present invention;

FIG. 5 is a spectrum diagram of a second embodiment of the light-emitting diode light-mixing structure of the present invention.

Claims (8)

A light-emitting diode mixed light structure includes: a single package; at least two light-emitting diode wafers are arranged in the single package, and the corresponding light intensity peaks emitted by the light-emitting diode wafers correspond to each other. The wavelengths are different from each other by at least 10 nm; and a fluorescent layer is disposed in the internal space of the single package and is overlaid on the at least two light-emitting diode wafers. The fluorescent layers are uniformly mixed and have different allowable excitations corresponding to each other. At least one kind of fluorescent powder and colloid in the wave band, after each fluorescent powder absorbs the light intensity peak emitted from the light emitting diode wafer at the same time, the fluorescent layer outputs a mixed light spectrum; wherein, the color temperature in the mixed light spectrum In the wavelength range with a value greater than or equal to 4000K, the maximum value of the light intensity peak belonging to the blue light interval accounts for 75% of the integrated intensity value in the entire wavelength range. According to the light-emitting diode light-mixing structure described in item 1 of the scope of the patent application, when the color temperature value of the light-mixing spectrum is 4000K, the permissible quadrilateral corner coordinates of the color-light mixing spectrum corresponding to the chromaticity coordinates of the CIE1931 specification are : (0.4006, 0.4044), (0.3736, 0.3874), (0.3670, 0.3578) and (0.3898, 0.3716). According to the light-emitting diode light-mixing structure described in item 1 of the scope of patent application, when the color temperature value of the light-mixing spectrum is 4500K, the permissible quadrilateral corner points of the light-mixing spectrum corresponding to the chromaticity coordinates of CIE1931 are : (0.3736, 0.3874), (0.3515, 0.3487), (0.3551, 0.3760), and (0.3670, 0.3578). According to the light-emitting diode light-mixing structure described in item 1 of the scope of patent application, when the color temperature value of the light-mixing spectrum is 5000K, the permissible quadrilateral corner coordinates of the light-light mixing spectrum corresponding to the chromaticity coordinates of the CIE1931 specification are : (0.3551, 0.3760), (0.3376, 0.3616), (0.3366, 0.3369) and (0.3515, 0.3487). The light-emitting diode light-mixing structure described in item 1 of the scope of the patent application, wherein when the color temperature value of the light-mixing spectrum is 5700K, the permissible quadrilateral corner coordinates of the color-light mixing spectrum corresponding to the chromaticity coordinates of CIE1931 are : (0.3376, 0.3616), (0.3207, 0.3462), (0.3222, 0.3243) and (0.3366, 0.3369). According to the light-emitting diode mixed light structure described in item 1 of the scope of the patent application, when the color temperature value of the mixed light spectrum is 6500K, the allowed quadrangular corner point coordinates of the mixed light spectrum corresponding to the chromaticity coordinates of the CIE1931 specification are : (0.3207, 0.3462), (0.3038, 0.3308), (0.3078, 0.3117), and (0.3222, 0.3243). According to the light emitting diode light-mixing structure described in item 1 of the scope of patent application, wherein the corresponding wavelengths of the light intensity peaks emitted by the light emitting diode wafers differ from each other by at least 20 nm to 30 nm. According to the light emitting diode mixed light structure described in item 1 of the scope of the patent application, wherein the maximum value and the minimum value of the permitted excitation band of the phosphors differ from each other by at least 5 nm.