TWI677895B - Plasma apparatus and monitoring method thereof - Google Patents

Abstract

The disclosure provides a plasma equipment and a plasma equipment monitoring method, wherein the plasma equipment includes: a process cavity having a through hole; a wafer holder disposed in the process cavity; and a light transmitting element disposed in the through hole. And a light-shielding device disposed on the light-transmitting element. The plasma equipment further includes an optical detector disposed on the light shielding device; and a spectral analysis device coupled to the optical detector.

Description

   Plasma equipment and monitoring method for plasma equipment   

The invention mainly relates to a semiconductor device and a monitoring method, in particular to a plasma device and a monitoring method thereof.

Semiconductor devices have been used in a variety of electronic applications, such as personal computers, mobile phones, digital cameras, and other electronic devices. A semiconductor device is basically manufactured by sequentially depositing a material of an insulating layer or a dielectric layer, a conductive layer, and a semiconductor layer to a wafer, and patterning a plurality of material layers using lithography technology to form circuit components and components thereon. . Many integrated circuits are generally manufactured on a single wafer, and individual dies on the wafer are cut and separated along the cutting line between the integrated circuits. For example, individual dies are basically separately packaged in a multi-chip module or other types of packages.

Today's semiconductor industry increases the capacity of wafers by increasing the size of wafers and lowers the price of each wafer. However, as the size of the wafer increases, the size of the process chamber of the plasma equipment used to process the wafer also increases. Therefore, when the wafer is etched in the process chamber, etc., the plasma distribution in the process chamber needs to be controlled more precisely.

According to this, although the current plasma equipment meets the purpose of its use, it has not yet met many other requirements. Therefore, there is a need to provide improved solutions for plasma equipment.

The disclosure provides a plasma device, including: a process cavity having a through hole; a wafer holder disposed in the process cavity; a light transmitting element disposed in the through hole; and a light shielding device disposed in light transmitting Component. The plasma equipment further includes an optical detector disposed on the light shielding device; and a spectral analysis device coupled to the optical detector.

The disclosure provides a method for monitoring plasma equipment, including: stimulating a working gas in a process cavity to form a plasma, wherein the light generated by the plasma passes through a light-transmitting element in the process cavity and a light-shielding element disposed on the light-transmitting element A device; and detecting light and generating a detection signal. The plasma equipment monitoring method further includes generating a spectrum signal according to the detection signal; and adjusting the shading device according to the spectrum signal.

1‧‧‧ Plasma equipment

10‧‧‧Processing cavity

11‧‧‧ sidewall

12‧‧‧through hole

13‧‧‧Translucent element

20‧‧‧ Wafer Block

30‧‧‧Gas supply device

31‧‧‧Gas distribution plate

311‧‧‧channel

312‧‧‧Drain hole

313‧‧‧upper surface

32‧‧‧Gas storage tank

33‧‧‧Airflow controller

40‧‧‧First RF Device

41‧‧‧First electrode plate

42‧‧‧First RF Power Supply

50‧‧‧Second Radio Frequency Device

51‧‧‧Second electrode plate

52‧‧‧Second RF Power Supply

60‧‧‧optical monitoring system

61, 62‧‧‧ Optical Detector

63‧‧‧Spectrum Analysis Device

631‧‧‧optical sensor

64‧‧‧Processing device

70, 70a, 70b ‧‧‧ Shading device

71‧‧‧ base

72‧‧‧ adjustment agency

73‧‧‧shield

74‧‧‧light transmission hole

75‧‧‧ mesh structure

E1‧‧‧ Plasma

W1‧‧‧ Wafer

W11‧‧‧ Substrate

W12‧‧‧Etch stop layer

W13‧‧‧Working layer

W131‧‧‧Unexposed area

W132‧‧‧ exposed area

F1‧‧‧optical fiber

FIG. 1 is a schematic diagram of a plasma apparatus according to some embodiments of the present disclosure.

FIG. 2 is a system diagram of an optical monitoring system according to some embodiments of the present disclosure.

3A and 3B are schematic diagrams of a light shielding device according to some embodiments of the present disclosure.

FIG. 4 is a flowchart of a plasma equipment monitoring method according to some embodiments of the disclosure.

FIG. 5 is a schematic diagram of a light shielding device according to some embodiments of the present disclosure.

FIG. 6 is a schematic diagram of a light shielding device according to some embodiments of the present disclosure.

The following description provides many different embodiments, or examples For implementing different features of the invention. The elements and arrangements described in the following specific examples are only used to simplify the embodiment of the present invention, which are merely examples, and are not intended to limit the embodiments of the present invention. For example, the description of a structure on or above a first feature includes a direct contact between the first and second features, or another feature is placed between the first and second features, so that the first feature The first and second features are not in direct contact.

In addition, the same component numbers and / or text are used in different examples in this specification. The foregoing use is merely for simplification and clarity, and does not mean that there must be a correlation between different embodiments and settings.

The first and second words in this specification are only for the purpose of clear explanation, and are not used to correspond to and limit the scope of patents. In addition, terms such as the first feature and the second feature are not limited to the same or different features.

The terms related to space, such as above or below, are only used to briefly describe the relationship between one element or one feature on the drawing and another element or feature. In addition to the orientation described in the drawings, it includes devices used or operated in different orientations. The shapes, sizes, and thicknesses in the drawings may not be drawn to scale or simplified for clarity, and are provided for illustration purposes only.

The disclosure provides a light shielding device for plasma equipment, which can maintain the intensity of the plasma spectrum detected by the optical monitoring system within a range, thereby reducing the probability of misjudging the plasma process or the abnormality of the plasma equipment.

FIG. 1 is a schematic diagram of a plasma apparatus 1 according to some embodiments of the present disclosure. The plasma equipment 1 can be used to implement a plasma process to the wafer W1. In some embodiments, the plasma equipment 1 may be an etching equipment, a physical vapor deposition (PVD) Equipment, a chemical vapor deposition (CVD) equipment, or an ion implantation (Ion Implantation) equipment. The plasma process can be an etching process, a physical vapor deposition process, a chemical vapor deposition process, or an ion implantation process.

In this embodiment, the plasma equipment 1 may be an etching equipment for performing an etching process to the wafer W1. The plasma equipment 1 may include a process chamber 10, a wafer holder 20, a gas supply device 30, a first radio frequency device 40, a second radio frequency device 50, an optical monitoring system 60, and a light shielding device 70.

In some embodiments, the pressure in the process chamber 10 is in the range of about 10 mTorr to 100 mTorr. The wafer holder 20 is disposed in the process chamber 10 and is used to carry a wafer W1. In some embodiments, the wafer base 20 may be an electrostatic wafer base. In some embodiments, the wafer W1 is placed on a supporting surface of the wafer holder 20 facing the gas supply device 30. The diameter of the wafer W1 may be in a range of approximately 200 mm to 450 mm.

The gas supply device 30 is used to supply working gas into the process chamber 10 during the plasma manufacturing process. The gas supply device 30 may include a gas distribution plate 31, a gas storage tank 32, and a gas flow controller 33. The gas distribution plate 31 is located above the wafer holder 20 and may be a disc-shaped structure.

The gas distribution plate 31 has a passage 311 and a plurality of discharge holes 312. The channel 311 is coupled to the airflow controller 33. The discharge hole 312 communicates with the channel 311 and faces the wafer holder 20. The gas distribution plate 31 is used to eject working gas toward the wafer holder 20. In some embodiments, the size of the gas distribution plate 31 corresponds to the size of the wafer W1. The gas distribution plate 31 may be made of quartz. In some embodiments, the bearing surface of the wafer holder 20, the gas distribution plate 31, and the wafer W1 are parallel to each other.

The gas storage tank 32 may be disposed outside the process chamber 10 for storage Working gas. The gas storage tank 32 is coupled to the gas distribution plate 31. The airflow controller 33 is coupled to the gas storage tank 32 and the gas distribution plate 31. The airflow controller 33 may be disposed outside the process chamber 10 and used to deliver the working gas in the gas storage tank 32 to the gas distribution plate 31. The working gas delivered to the gas distribution plate 31 enters the passage 311 and enters the process chamber 10 through the discharge hole 312. In some embodiments, the airflow controller 33 may be a pump or a valve.

In some embodiments, the working gas includes CF ₄ , CHF ₃ , C ₂ F ₆ , SF ₆ , O ₂ , N ₂ , and / or Ar. In this embodiment, the number of the gas storage tank 32 and the airflow controller 33 is one, but it is not limited. The number of the gas storage tank 32 and the air flow controller 33 can be two or more, so that different working gases can be delivered into the process chamber 10 according to the requirements of different plasma processes.

The first radio frequency device 40 is located on the gas distribution plate 31. The first radio frequency device 40 is used to generate an electric field in the process cavity 10. The first radio frequency device 40 includes a first electrode plate 41 and a first radio frequency power source 42. The first electrode plate 41 is located on the gas distribution plate 31. In some embodiments, the size of the first electrode plate 41 corresponds to the area of the gas distribution plate 31 and / or the wafer W1. The first electrode plate 41 may be parallel to the gas distribution plate 31 and / or the wafer W1. The first radio frequency power source 42 is coupled to the first electrode plate 41 and is used to provide radio frequency energy to the first electrode plate 41.

The second radio frequency device 50 can be connected to the wafer holder 20. The second radio frequency device 50 is used to generate an electric field in the process chamber 10. In other words, an electric field is generated between the first RF device 40 and the second RF device 50 to excite the working gas to form the plasma E1.

The second radio frequency device 50 may include a second electrode plate 51 and a second radio frequency power supply 52. The second electrode plate 51 may be located in the wafer holder 20. In some implementations In the example, the size of the second electrode plate 51 corresponds to the size of the first electrode plate 41. The second radio frequency power supply 52 is coupled to the second electrode plate 51 and is used to provide radio frequency energy to the second electrode plate 51.

During the etching process, the wafer W1 is disposed on the wafer holder 20. In some embodiments, the wafer W1 includes a substrate W11, an etch stop layer W12, and a working layer W13. The etch stop layer W12 is provided on the substrate W11. The working layer W13 is disposed on the etch stop layer W12. In some embodiments, the working layer W13 may be a photoresist layer. The working layer W13 includes a plurality of unexposed regions W131 and an exposed region W132.

After that, the airflow controller 33 inputs the working gas in the gas storage tank 32 into the gas distribution plate 31. The working gas in the gas distribution plate 31 enters the process chamber 10 through the exhaust hole 312. The first RF device 40 and the second RF device 50 are activated to generate an electric field between the wafer holder 20 and the gas distribution plate 31. Since the wafer W1 is located between the first electrode plate 41 and the second W131 electrode plate 51, the wafer W1 is located in the electric field.

In the etching process, a plasma E1 is formed between the wafer W1 and the gas distribution plate 31 after the working gas is excited by an electric field. In this embodiment, the plasma E1 can be used to etch the unexposed area of the wafer W1. In another embodiment, the plasma E1 can be used to etch the exposed area W132 of the wafer W1.

Generally speaking, in the etching process, since different chemical materials are brought into the plasma E1, the plasma E1 will generate different spectra according to the etching degree of the working layer W13. For example, when the plasma E1 etches a part of the unexposed area W131 of the working layer W13, some of the chemical materials of the working layer W13 float into the process chamber 10 and are brought into the plasma E1. Different chemical materials in plasma E1 will excite different wavelengths The light caused the spectrum of plasma E1 to change.

When the working layer W13 is further etched, the chemical material brought into the plasma E1 increases. At this time, the spectrum of the plasma E1 will be different from the spectrum of the plasma E1 at the beginning of the etching process. Therefore, the etching degree of the working layer W13 determines the spectrum of the plasma E1.

In addition, when the etch stop layer W12 is etched, the chemical material of the etch stop layer W12 is also brought into the plasma E1. The spectrum of the plasma E1 will also be changed by the chemical material of the etch stop layer W12. Generally speaking, the end point of the etching process can be defined as when the unexposed area W131 is completely or substantially completely removed or when the etching stop layer W12 is etched. Therefore, the end of the etching process can be determined based on the spectrum of plasma E1.

The optical monitoring system 60 is connected to the process chamber 10. The optical monitoring system 60 is used to detect the spectrum of the plasma E1, thereby monitoring the etching process and the condition of the plasma equipment 1.

FIG. 2 is a system diagram of an optical monitoring system 60 according to some embodiments of the present disclosure. As shown in FIGS. 1 and 2, the optical monitoring system 60 includes a plurality of optical detectors 61, an optical detector 62, a spectrum analysis device 63, and a processing device 64. As shown in FIG. 1, the optical detector 61 may be disposed between the first electrode plate 41 and the gas distribution plate 31. In some embodiments, the optical detector 61 may be disposed on the upper surface 313 of the gas distribution plate 31. In this embodiment, the optical detector 61 may pass through the upper surface 313 of the gas distribution plate 31 and may be buried in the gas distribution plate 31.

In some embodiments, the gas distribution plate 31 between the optical detector 61 and the exhaust hole 312 may be transparent. Therefore, the light generated by the plasma E1 in the process chamber 10 can be irradiated to the optical detector through the discharge hole 312 of the gas distribution plate 31 61. In some embodiments, the optical detector 61 may be exposed on the channel 311.

The optical detector 61 is used to detect the spectrum of the plasma E1 and generate a detection signal to the spectrum analysis device 63. In some embodiments, the optical detector 61 may be an end-point detector for detecting the etching thickness of the working layer W13 and the end point of the etching process.

In some embodiments, the optical detectors 61 are arranged on the gas distribution plate 31 in an array. Therefore, each optical detector 61 can correspond to a different area of the wafer W1. Therefore, the optical detector 61 can be used to detect the etching degree of different regions of the wafer W1.

The optical detector 62 is disposed on one side wall 11 of the processing cavity 10 and is located outside the processing cavity 10. The side wall 11 may be substantially a vertical side wall, and may be substantially perpendicular to the gas distribution plate 31 or the wafer W1. In this embodiment, the side wall 11 has a through hole 12, and the process cavity 10 has a light transmitting element 13 disposed in the through hole 12.

In some embodiments, the light-transmitting element 13 may be a sheet-like structure. The light transmitting element 13 is adjacent to a region between the gas distribution plate 31 and the wafer holder 20. The optical detector 62 may be disposed on the light transmitting element 13. Therefore, the light generated by the plasma E1 in the process chamber 10 can be irradiated to the optical detector 62 through the light transmitting element 13.

The optical detector 62 is used to detect the spectrum of the plasma E1 and is used to generate a detection signal to the spectrum analysis device 63. In some embodiments, the optical detector 62 may be an optical emission spectrum detector (OES detector) for detecting the state and quality of the plasma E1 in the etching process.

The spectrum analysis device 63 is coupled to the optical detector 61 and the optical detector 62. The spectrum analysis device 63 is used for receiving the optical detector 61 and the optical detection The detection signal generated by the processor 62 generates a spectrum signal to the processing device 64 according to the detection signal.

In some embodiments, the optical detector 61 and the optical detector 62 are connected to the spectrum analysis device 63 via the optical fiber F1. The spectral analysis device 63 may include an optical sensor 631, such as a complementary metal-oxide semiconductor (CMOS) sensor or a photosensitive-coupled device (CCD) sensor. In some embodiments, the optical detector 61 and the optical detector 62 transmit the detection signal to the spectrum analysis device through wireless transmission.

In some embodiments, the light generated by the plasma E1 enters the optical detector 61 and the optical detector 62 and is transmitted to the optical sensor 631 through the optical fiber F1. The spectrum analysis device 63 generates a spectrum signal according to the light radiated to the optical sensor 631. In other words, the spectral signal corresponds to the spectrum of the plasma E1.

The processing device 64 is coupled to the spectrum analysis device 63, the airflow controller 33, the first RF power source 42, and the second RF power source 52. The processing device 64 is used to receive a spectrum signal, and can determine whether the semiconductor device 1 has a fault condition and generate a warning signal according to the spectrum signal. For example, if there is no abnormality in the plasma manufacturing process or the plasma equipment 1, the spectral signal is similar to a reference spectral signal. When the difference between the spectrum signal and a reference spectrum signal is too large, the processing device 64 can determine that the plasma equipment 1 has failed and issue a warning signal. In addition, the processing device 64 can generate a control signal according to the spectrum signal to control the etching degree and the etching end point. In some embodiments, the processing device 64 may be a computer.

In some embodiments, if the processing device 64 analyzes the spectrum signal and considers that the semiconductor device is faulty or abnormal, it may issue a warning signal, and Stop the semiconductor device.

In some embodiments, the airflow controller 33 adjusts the flow rate of the working gas output to the gas distribution plate 31 according to the control signal. For example, when the amount of the plasma E1 is insufficient, the airflow controller 33 may increase the flow rate of the working gas output to the gas distribution plate 31 according to the control signal.

In some embodiments, the first RF power source 42 and the second RF power source 52 adjust the RF energy output from the first electrode plate 41 and the second electrode plate 51 according to the control signal, thereby changing the strength of the electric field. When the etching degree of the working layer W13 is insufficient, the first RF power source 42 and the second RF power source 52 increase the RF energy output to the first electrode plate 41 and the second electrode plate 51 according to the control signal.

The light shielding device 70 is disposed on the light transmitting element 13. The light shielding device 70 may be located outside the process cavity 10 to avoid being damaged by the plasma E1. In some embodiments, the light shielding device 70 is located between the light transmitting element 13 and the optical detector 62. One side of the light shielding device 70 is connected to the side wall 11 of the process cavity 10 and faces the light transmitting element 13. The other side of the light shielding element is connected to the optical detector 62. The light shielding device 70 can physically block the amount of light transmitted from the light transmitting element 13 into the optical detector 62.

3A and 3B are schematic diagrams of a light shielding device 70 according to some embodiments of the present disclosure. In this embodiment, the light shielding device 70 may include a base 71 and an adjustment mechanism 72. The base 71 is disposed on the sidewall 11 of the process cavity 10 and corresponds to the light transmitting element 13. The base 71 may be a ring structure. In some embodiments, the base 71 is detachably disposed on the sidewall 11 of the process cavity 10 to facilitate replacement of the light shielding device 70.

The adjustment mechanism 72 is disposed on the base 71 and is formed corresponding to the light transmission The transparent hole 74 of the element 13. The adjusting mechanism 72 is used to physically block light passing through the light transmitting element 13. In this embodiment, the size of the light transmitting hole 74 is variable. The processing device 64 is electrically connected to the adjustment mechanism 72 and is used to control the adjustment mechanism 72 to adjust the size of the transparent hole 74. In other words, the adjusting mechanism 72 can adjust the shielding rate of the light passing through the light transmitting element 13. In some embodiments, the above-mentioned masking rate may be in a range of 0% to 80%.

In some embodiments, the minimum area of the light transmitting hole 74 is smaller than the area of the light transmitting element 13. In some embodiments, the minimum area of the light transmitting hole 74 is 50% to 80% of the area of the light transmitting element 13. In some embodiments, the maximum area of the light transmitting hole 74 is greater than or equal to the area of the light transmitting element 13. The area of the light transmitting element 13 is measured on a cross section of the light transmitting element 13 parallel to the light transmitting hole 74.

In some embodiments, the adjusting mechanism 72 includes a plurality of light shielding sheets 73, which are arranged annularly on the inner side wall of the base 71 and form light transmitting holes 74. The light shielding sheet 73 is used to physically block light passing through the light transmitting element 13. The processing device 64 generates a control signal according to the spectrum signal and transmits it to the adjustment mechanism 72. In some embodiments, the adjustment mechanism 72 includes a driver. The driver of the adjustment mechanism 72 controls the movement of the light shielding sheet 73 according to the control signal, thereby adjusting the size of the light transmitting hole 74. As shown in FIG. 3A, the size of the light transmitting hole 74 is small. As shown in FIG. 3B, the size of the light transmitting hole 74 is large.

When the plasma process is implemented, the plasma E1 will gradually cause the light transmitting element 13 to wear and reduce the light transmittance of the light transmitting element 13. When the transmittance of the light-transmitting element 13 decreases too much, the difference between the spectral signal generated by the spectral analysis device 63 and the reference spectral signal is too large, which may cause the processing device 64 to misjudge the plasma process or the plasma equipment 1 to be abnormal. Affects the production efficiency of wafer W1.

Therefore, in the present embodiment, the power can be first turned on by the light shielding device 70. The light generated by the slurry E1 passes through the light-transmitting element 13 and the light-shielding device 70 to reduce the light transmittance. When the light-transmitting element 13 is reduced due to the wear of the plasma process, the processing device 64 may use the spectral signal and the reference spectral signal The difference controls the shading device 70 to increase the size of the light-transmitting hole 74, thereby increasing the light transmittance of light passing through the light-transmitting element 13 and the light-shielding device 70.

In other words, the light transmittance of the light passing through the light-transmitting element 13 and the light-shielding device 70 can be stabilized by the light-shielding device 70. When there is no abnormality in the plasma manufacturing process or the plasma equipment 1, the spectrum analysis device 63 can generate a stable intensity spectrum signal. In addition, because the plasma signal is similar to the reference spectrum signal when there is no abnormality in the plasma process or the plasma equipment 1, the processing device 64 analyzes the spectral signal with a stable intensity, which can reduce the misjudgment of the plasma process or the appearance of the plasma equipment 1. Unusual probability.

For example, when a new light-transmitting element 13 is installed in the process cavity 10, the light transmittance of the light-transmitting element 13 may be about 100%. As shown in FIG. 3A, the light-shielding device 70 having smaller light-transmitting holes 74 can reduce the light transmittance of the light passing through the light-transmitting element 13 and the light-shielding device 70 to a predetermined value, for example, 70%.

After completing the plasma process several times (for example, 100 times, but not limited to this), the light transmittance of the light transmitting element 13 decreases due to the abrasion of the plasma process, for example, it decreases to 99%. At this time, the processing device 64 increases the size of the light transmitting hole 74 according to the intensity of the spectral signal. The light-shielding device 70 having a larger light-transmitting hole 74 as shown in FIG. 3B allows the light transmittance of the light to pass through the light-transmitting element 13 and the light-shielding device 70 to the aforementioned predetermined value. Therefore, in the present disclosure, the light shielding device 70 can be used to maintain the intensity of the spectral signal generated by the spectral analysis device 63, so that the processing device 64 can more accurately analyze whether the plasma processing process or the plasma equipment 1 is abnormal.

In some embodiments, the processing device 64 adjusts the size of the light-transmitting hole 74 after each plasma process is completed. In some embodiments, the processing device 64 performs the action of adjusting the size of the light-transmitting hole 74 one or more times during a plasma process. In some embodiments, the processing device 64 adjusts the size of the light transmitting hole 74 according to a predetermined number of spectral signals after performing a predetermined number of plasma processes. The predetermined number of times can be two, three, or more than four.

In the above example, when the processing device 64 analyzes the spectral signal to determine that the light transmittance of the light passing through the light-transmitting element 13 and the light-shielding device 70 has decreased to a predetermined value (for example, 70%), and it is impossible to increase the light transmission by increasing the light-transmitting hole 74 When the light transmittance of the light-transmitting element 13 and the light-shielding device 70 is reached, the processing device 64 may notify the maintenance personnel to replace the light-transmitting element 13. In some embodiments, the light transmittance of the light passing through the light transmitting device 13 and the light shielding device 70 is maintained to N% by the light shielding device 70. When the processing device 64 analyzes the spectral signal to determine that the light transmittance of the light passing through the light-transmitting element 13 and the light-shielding device 70 has decreased to N%, and the size of the light-transmitting hole 74 is the largest, the processing device 64 can notify the maintenance personnel to perform the light-transmitting element 13 Its replacement. The above N% can be in the range of 50% to 80%.

FIG. 4 is a flowchart of a plasma equipment monitoring method according to some embodiments of the disclosure. In step 101, the working gas in the process chamber 10 is excited to form a plasma E1. The light generated by the plasma E1 passes through the light transmitting element 13 and the light shielding device 70. In step 103, the optical detector 62 detects the light and generates a detection signal.

In step S105, the spectrum analysis device 63 generates a spectrum signal according to the detection signal. In step S107, the processing device 64 adjusts the light shielding device 70 according to the spectrum signal. In some embodiments, the processing device 64 adjusts the modulation according to the spectral signal. The adjusting mechanism 70 increases the size of the light-transmitting hole 74 formed by the adjusting mechanism 70.

FIG. 5 is a schematic diagram of a light shielding device 70 according to some embodiments of the present disclosure. In this embodiment, the light shielding device 70 may include a base 71 and a mesh structure 75. The base 71 is disposed on the side wall 11 of the process cavity 10 and corresponds to the light transmitting element 13. The base 71 may be a ring structure.

The mesh structure 75 is connected to the inner wall of the base 71 and corresponds to the light transmitting element 13. The mesh structure 75 may be made of an opaque material. In some embodiments, the mesh structure 75 may be made of a metal material, such as iron. The mesh structure 75 is used to physically block light passing through the light transmitting element 13. The shielding rate of the mesh structure 75 to shield the light passing through the light transmitting element 13 may be in a range of 10% to 80%. In this example, the shielding rate of the mesh structure 75 may be 30%.

For example, when a new light-transmitting element 13 is installed in the process cavity 10, the light transmittance of the light-transmitting element 13 may be about 100%. The mesh structure 75 of the light shielding device 70 can reduce the light transmittance of the light through the light transmitting element 13 and the light shielding device 70 to a first predetermined value, for example, 70%.

After completing the plasma process several times (for example, 100 times, but not limited to this), the light transmittance of the light-transmitting element 13 will be worn due to the plasma process. When the processing device 64 analyzes the spectral signal to determine that the light transmittance of the light passing through the light transmitting element 13 and the light shielding device 70 is reduced to a second predetermined value (for example, 50%), the light can be transmitted through the light by replacing another light shielding device 70. The light transmittance of the element 13 and the light shielding device 70 is increased to a first predetermined value.

For example, the shielding rate of the other light shielding device 70 may be 20%. When the light transmittance of the light transmitting element 13 is reduced to 80%, the light shielding device 70 with a shielding rate of 30% can be replaced with the light shielding device 70 with a shielding rate of 10%, thereby transmitting light through the light. The light transmittance of the element 13 and the light shielding device 70 is increased to a first predetermined value.

When the processing device 64 analyzes the spectral signal to determine that the light transmittance of the light passing through the light-transmitting element 13 and the light-shielding device 70 has decreased to a second predetermined value, and the size of the light-transmitting hole 74 is the largest, the light-transmitting element 13 may be replaced. Therefore, in the present disclosure, the use of the light shielding device 70 can maintain the intensity of the spectral signal within a range, so that the processing device 64 can accurately analyze whether the plasma processing process or the plasma equipment 1 is abnormal.

FIG. 6 is a schematic diagram of a light shielding device 70 according to some embodiments of the present disclosure. In this embodiment, the plasma apparatus 1 may have a plurality of light shielding devices 70. In some embodiments, the light shielding device 70 may be two or more than three.

The shielding rate of the mesh structure 75 of each light-shielding device 70 to shield the light passing through the light-transmitting element 13 can be in the range of 10% to 70%. In some embodiments, the mesh structure 75 of each light-shielding device 70 is the same and can have the same shielding rate, thereby reducing the manufacturing cost of the light-shielding device 70.

In this embodiment, two light shielding devices 70a and 70b are taken as an example. The shielding rate of the mesh structure 75 of each light shielding device 70 may be 20%. The orientation of the mesh structure 75 of the light shielding device 70a is different from that of the mesh structure 75 of the light shielding device 70b. By adjusting the orientation of the mesh structure 75 of the light shielding device 70a or the mesh structure 75 of the light shielding device 70b, the light transmittance of the light passing through the light transmitting element 13 and the light shielding device 70 to a first predetermined value, such as 70%.

After completing the plasma process several times (for example, 100 times, but not limited to this), the light transmittance of the light-transmitting element 13 will be worn due to the plasma process. When the light transmittance of the light passing through the light transmitting element 13 and the light shielding device 70 is reduced to a second predetermined value (for example, 50%), the first light shielding device 70a or the second light shielding device may be used. 70b is removed to increase the light transmittance of the light passing through the light transmitting element 13 and the light shielding device 70 to a first predetermined value.

In some embodiments, when the light transmittance of the light passing through the light-transmitting element 13 and the light-shielding device 70 is reduced to a second predetermined value (for example, 50%), the first light-shielding device 70a may be opposed to the second light-shielding device. 70b rotates to increase the light transmittance of the light passing through the light transmitting element 13 and the light shielding device 70 to a first predetermined value.

When the processing device 64 analyzes the spectral signal to determine that the light transmittance of the light passing through the light transmitting element 13 and the light shielding device 70 has decreased to a second predetermined value, and the light passing through the light transmitting element 13 and the light shielding device 70 cannot be increased by increasing the light transmitting hole 74. When the light transmittance is high, the light transmitting element 13 may be replaced.

In summary, the shading device of the embodiment of the present disclosure can maintain the intensity of the spectral signal detected by the optical detector within a range, so as to accurately analyze whether the plasma process or the plasma equipment is abnormal. .

The disclosure provides a plasma device, including: a process cavity having a through hole; a wafer holder disposed in the process cavity; a light transmitting element disposed in the through hole; a light shielding device disposed in the light transmitting element Above; a first optical detector disposed on the light shielding device; and a spectrum analysis device coupled to the optical detector.

In some embodiments, the light shielding device includes: a base provided in the process cavity; and an adjustment mechanism provided in the base and forming a light transmitting hole corresponding to the light transmitting element.

In some embodiments, the adjusting mechanism includes a plurality of light shielding plates arranged in a ring shape on the base and forming a light transmitting hole.

In some embodiments, the plasma equipment further includes a processing device, which is electrically connected to the spectrum analysis device and the adjustment mechanism, and is used to control the adjustment mechanism to adjust the size of the light transmission hole.

In some embodiments, the optical detector is configured to detect the light passing through the transparent hole and generate a detection signal to be transmitted to the spectrum analysis device. The spectrum analysis device generates a spectrum signal to the processing device according to the detection signal, and processes the signal. The device controls the adjustment mechanism based on the spectral signal.

In some embodiments, the adjustment mechanism includes: a base disposed in the process cavity; and a mesh structure disposed on the base and corresponding to the light-transmitting element, wherein the mesh structure is made of an opaque material.

In some embodiments, the plasma equipment further includes: a gas distribution plate, which is disposed in the process chamber and above the wafer holder; a gas storage tank, which is coupled to the gas distribution plate; and a second optical detection Device arranged on the gas distribution plate. The gas distribution tray is used to supply a working gas toward the wafer holder.

In some embodiments, the plasma equipment further includes: a first radio frequency device located on the gas distribution plate; and a second radio frequency device coupled to the wafer holder, wherein the first radio frequency device and the second radio frequency device are used for An electric field is generated between the wafer holder and the gas distribution plate, and the electric field is used to excite the working gas to form a plasma.

The disclosure provides a method for monitoring plasma equipment, including: stimulating a working gas in a process cavity to form a plasma, wherein the light generated by the plasma passes through a light-transmitting element in the process cavity and a light-shielding element disposed on the light-transmitting element. A device; and detecting light and generating a detection signal. The plasma equipment monitoring method further includes generating a spectral signal according to the detection signal; and adjusting the shading according to the spectral signal. Device.

In some embodiments, the size of a light-transmitting hole of the light-shielding device is adjusted according to the spectral signal.

The above-mentioned disclosed features can be combined, modified, replaced or transferred with one or more of the disclosed embodiments in any suitable manner, and are not limited to the specific embodiments.

Although the present invention is disclosed in various embodiments as above, it is only an example reference and is not intended to limit the scope of the present invention. Any person skilled in the art can make some changes without departing from the spirit and scope of the present invention. With retouch. Therefore, the above embodiments are not intended to limit the scope of the present invention, and the protection scope of the present invention shall be determined by the scope of the attached patent application.

Claims (9)

A plasma device includes: a process cavity having a through hole; a wafer holder disposed in the process cavity; a light transmitting element disposed in the through hole; and a light shielding device disposed on the light transmitting element. A first optical detector disposed on the light-shielding device; and a spectral analysis device coupled to the first optical detector, wherein the first optical detector is used to detect the light passing through the light-shielding device; The light from a light transmitting hole generates a detection signal and transmits it to the spectrum analysis device. The spectrum analysis device generates a spectrum signal according to the detection signal and transmits it to a processing device, and the processing device controls the light transmission according to the spectrum signal. The size of the hole. The plasma equipment according to item 1 of the scope of patent application, wherein the light shielding device comprises: a base provided on the process cavity; and an adjustment mechanism provided on the base and formed corresponding to the light transmission The light transmitting hole of the device. The plasma equipment according to item 2 of the scope of patent application, wherein the adjusting mechanism includes a plurality of light shielding plates arranged in a ring shape on the base and forming the light transmitting hole. The plasma equipment according to item 2 of the scope of patent application, wherein the processing device is electrically connected to the spectrum analysis device and the adjustment mechanism, and is used to control the adjustment mechanism, and then adjust the size of the light transmission hole. A plasma device includes: a process cavity having a through hole; a wafer holder disposed in the process cavity; a light transmitting element disposed in the through hole; and a light shielding device disposed on the light transmitting element. And includes: a base provided on the process cavity; and a mesh structure provided on the base and corresponding to the light-transmitting element, wherein the mesh structure is made of an opaque material; A first optical detector is disposed on the light shielding device; and a spectrum analysis device is coupled to the first optical detector. The plasma equipment according to any one of claims 1 to 5 of the scope of patent application, further comprising: a gas distribution plate, which is arranged in the process cavity and is located above the wafer holder; a gas storage tank Is coupled to the gas distribution plate; and a second optical detector is disposed on the gas distribution plate; wherein the gas distribution plate is used to supply a working gas toward the wafer holder. The plasma equipment according to item 6 of the scope of patent application, further comprising: a first radio frequency device located on the gas distribution plate; and a second radio frequency device coupled to the wafer holder; wherein the first radio frequency device The device and the second radio frequency device are used to generate an electric field between the wafer holder and the gas distribution plate, and the electric field is used to excite the working gas to form a plasma. A plasma equipment monitoring method includes: stimulating a working gas in a process cavity to form a plasma, wherein light generated by the plasma passes through a light-transmitting element in the process cavity and a light-shielding device disposed on the light-transmitting element Detecting the light and generating a detection signal; generating a spectral signal according to the detection signal; and adjusting the shading device according to the spectral signal. According to the plasma equipment monitoring method described in item 8 of the scope of the patent application, wherein the step of adjusting the shading device includes adjusting a size of a light transmitting hole of the shading device according to the spectral signal.