TWI677757B - Photosensitive resin composition - Google Patents

Photosensitive resin composition Download PDF

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TWI677757B
TWI677757B TW107106528A TW107106528A TWI677757B TW I677757 B TWI677757 B TW I677757B TW 107106528 A TW107106528 A TW 107106528A TW 107106528 A TW107106528 A TW 107106528A TW I677757 B TWI677757 B TW I677757B
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photosensitive resin
resin composition
compound
laser light
mass
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TW107106528A
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Chinese (zh)
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TW201835683A (en
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山田有里
Yuri Yamada
小坂隼也
Junya Kosaka
松田隆之
Takayuki Matsuda
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日商旭化成股份有限公司
Asahi Kasei Kabushiki Kaisha
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C13/00—Cyclic hydrocarbons containing rings other than, or in addition to, six-membered aromatic rings
    • C07C13/28—Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof
    • C07C13/32—Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings
    • C07C13/54—Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings with three condensed rings
    • C07C13/573—Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings with three condensed rings with three six-membered rings
    • C07C13/58—Completely or partially hydrogenated anthracenes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C15/00—Cyclic hydrocarbons containing only six-membered aromatic rings as cyclic parts
    • C07C15/40—Cyclic hydrocarbons containing only six-membered aromatic rings as cyclic parts substituted by unsaturated carbon radicals
    • C07C15/42—Cyclic hydrocarbons containing only six-membered aromatic rings as cyclic parts substituted by unsaturated carbon radicals monocyclic
    • C07C15/44—Cyclic hydrocarbons containing only six-membered aromatic rings as cyclic parts substituted by unsaturated carbon radicals monocyclic the hydrocarbon substituent containing a carbon-to-carbon double bond
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C25/00—Compounds containing at least one halogen atom bound to a six-membered aromatic ring
    • C07C25/18—Polycyclic aromatic halogenated hydrocarbons
    • C07C25/22—Polycyclic aromatic halogenated hydrocarbons with condensed rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G03F7/0295—Photolytic halogen compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength

Abstract

本發明提供一種用於雙波長曝光，被賦予優異之曝光感度、密接性及解像性之感光性樹脂組合物。本發明之感光性樹脂組合物係用以利用中心波長未達390 nm之第1活性光與中心波長為390 nm以上之第2活性光進行曝光而獲得樹脂硬化物者，並且上述感光性樹脂組合物包含(A)鹼可溶性高分子、(B)具有乙烯性雙鍵之化合物、及(C)光聚合起始劑，上述感光性樹脂組合物具有對上述第1活性光及上述第2活性光兩者之感光性，上述(C)光聚合起始劑包含蒽及/或蒽衍生物。The present invention provides a photosensitive resin composition which is used for two-wavelength exposure and is provided with excellent exposure sensitivity, adhesion and resolution. The photosensitive resin composition of the present invention is used to obtain a cured resin by exposing the first active light with a center wavelength of less than 390 nm and the second active light with a center wavelength of 390 nm or more, and the above-mentioned photosensitive resin combination The substance includes (A) an alkali-soluble polymer, (B) a compound having an ethylenic double bond, and (C) a photopolymerization initiator, and the photosensitive resin composition has a property to the first active light and the second active light. Photosensitivity of both, the (C) photopolymerization initiator contains anthracene and / or anthracene derivative.

Description

感光性樹脂組合物Photosensitive resin composition

本發明係關於一種感光性樹脂組合物等。The present invention relates to a photosensitive resin composition and the like.

先前，印刷配線板通常藉由光微影法而製造。於光微影法中，首先對積層於基板上之感光性樹脂組合物層進行圖案曝光。感光性樹脂組合物之曝光部會聚合硬化(負型之情形時)或對顯影液可溶化(正型之情形時)。繼而，利用顯影液將未曝光部(負型之情形時)或曝光部(正型之情形時)去除而於基板上形成光阻圖案。繼而，實施蝕刻或鍍覆處理而形成導體圖案後，將光阻圖案自基板剝離去除。藉由歷經該等步驟而於基板上形成導體圖案。 於光微影法中，通常，於將感光性樹脂組合物塗佈於基板上時，使用如下兩種方法中之任一種：將感光性樹脂組合物之溶液塗佈於基板並使之乾燥之方法；或將藉由依序積層支持體、包含感光性樹脂組合物之層(以下亦稱作「感光性樹脂層」)、及視需要之保護層而獲得之感光性樹脂積層體(以下亦稱作「乾膜光阻」)積層於基板之方法。於印刷配線板之製造中經常使用後者。 隨著近年來印刷配線板中之配線間隔微細化，對乾膜光阻要求各種特性。尤其，曝光方式視用途而多樣化，藉由利用雷射之直接繪圖而無需光罩之無光罩曝光近年來顯現出急遽之擴展。作為無光罩曝光之光源，使用波長350～410 nm之光、尤其是i射線(365 nm)或h射線(405 nm)之情形較多。因此，可對於該等波長區域形成高感度且高解像度之光阻圖案受到重視。進而，隨著電子機器之小型化、輕量化，印刷配線板不斷微細化、高密度化，要求解像性等優異之高性能乾膜光阻。 通常，於將乾膜光阻加以曝光時，硬化光阻之感度、解像度及密接性受曝光波長下之乾膜光阻之吸光度影響較大。於吸光度較高之情形時，乾膜光阻之感度較高，即便於低曝光量下，硬化度亦變高。相對於此，於吸光度較低之情形時，到達乾膜光阻之底部之光變多，故而聚合反應容易進行至硬化光阻之底部，有密接性改善之傾向。於曝光光源為單波長之情形時，藉由適當地調整該波長下之乾膜光阻之吸光度，而設計適合於各曝光波長之乾膜光阻。近年來，追求光阻圖案之進一步微細化而應用搭載有2種雷射之曝光機。將使用以下2種雷射進行曝光之步驟稱作雙波長曝光。於雙波長曝光中，藉由將吸光度較高之波長與吸光度較低之波長組合，而可兼具吸光度較低之情形時與吸光度較高之情形時之優點。因此，雙波長曝光作為新型曝光方式於近年來受到期待。然而，先前之乾膜光阻係以於利用單波長、尤其是以未達390 nm為中心波長之雷射(例如i射線)或以390 nm以上之波長為中心波長之雷射(例如h射線)之任一者進行曝光時表現出最高性能之方式而設計，實施雙波長曝光之情形時之感度、解像度及密接性有改善之餘地。 於專利文獻1中，提出有使用特定之增感劑以390-405 nm被曝光之感光性樹脂組合物，於專利文獻2中，記載有利用於350-440 nm之範圍內具有波峰之光被曝光之感光性樹脂組合物。又，於專利文獻3中，出於提高光阻圖案之密接性及解像性之目標而記載有包含具有源自季戊四醇之骨架之(甲基)丙烯酸酯化合物之感光性樹脂組合物，於專利文獻4中，亦出於提高光阻圖案之密接性及解像性之目標而提出有包含具有源自二季戊四醇之骨架之(甲基)丙烯酸酯化合物之感光性樹脂組合物。 進而，為了提高乾膜光阻之感度、解像度及密接性之特性，提出有各種感光性樹脂組合物(專利文獻5、6)。於專利文獻5中，就光阻圖案之麓部形狀、解像性及殘膜率之觀點而言，對包含大量源自苯乙烯之共聚合成分之感光性樹脂組合物進行了研究。又，於專利文獻6中，對適合於雷射直接成像之感光性樹脂組合物進行了研究。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2008-217036號公報 [專利文獻2]國際公開第2007/004619號 [專利文獻3]日本專利特開2013-156369號公報 [專利文獻4]國際公開第2015/012272號 [專利文獻5]日本專利特開2013-61556號公報 [專利文獻6]日本專利特開2013-246387號公報Previously, printed wiring boards were usually manufactured by photolithography. In the photolithography method, pattern exposure is first performed on a photosensitive resin composition layer laminated on a substrate. The exposed portion of the photosensitive resin composition is polymerized and hardened (in the case of a negative type) or is soluble in a developing solution (in the case of a positive type). Then, a photoresist pattern is formed on the substrate by removing an unexposed portion (in the case of a negative type) or an exposed portion (in the case of a positive type) with a developing solution. Then, after etching or plating is performed to form a conductor pattern, the photoresist pattern is peeled off from the substrate. A conductor pattern is formed on the substrate by going through these steps. In the photolithography method, in general, when a photosensitive resin composition is coated on a substrate, either of the following two methods is used: a solution of the photosensitive resin composition is coated on a substrate and dried Method; or a photosensitive resin laminate (hereinafter also referred to as a photosensitive resin layer) obtained by sequentially laminating a support, a layer containing a photosensitive resin composition (hereinafter also referred to as a "photosensitive resin layer"), and a protective layer as necessary "Dry film photoresist") laminated on the substrate. The latter is often used in the manufacture of printed wiring boards. With the miniaturization of wiring intervals in printed wiring boards in recent years, various characteristics are required for dry film photoresists. In particular, exposure methods are diversified depending on applications, and maskless exposure by direct drawing using a laser without a mask has shown a rapid expansion in recent years. As a light source for maskless exposure, light with a wavelength of 350 to 410 nm, especially i-rays (365 nm) or h-rays (405 nm) is often used. Therefore, attention has been paid to the formation of photoresist patterns with high sensitivity and high resolution in these wavelength regions. Furthermore, with the miniaturization and weight reduction of electronic equipment, printed wiring boards are continuously miniaturized and densified, and high-performance dry film photoresists with excellent resolution and the like are required. Generally, when the dry film photoresist is exposed, the sensitivity, resolution, and adhesion of the hardened photoresist are greatly affected by the absorbance of the dry film photoresist at the exposure wavelength. When the absorbance is high, the sensitivity of the dry film photoresist is high, and the hardening degree becomes high even at low exposure. In contrast, when the absorbance is low, more light reaches the bottom of the dry film photoresist, so the polymerization reaction easily proceeds to the bottom of the hardened photoresist, and the adhesion tends to improve. When the exposure light source is a single wavelength, by appropriately adjusting the absorbance of the dry film photoresist at that wavelength, a dry film photoresist suitable for each exposure wavelength is designed. In recent years, further miniaturization of photoresist patterns has been pursued, and exposure machines equipped with two types of lasers have been applied. The step of exposing using the following two types of lasers is called dual-wavelength exposure. In the dual-wavelength exposure, by combining a wavelength with a higher absorbance and a wavelength with a lower absorbance, the advantages of the case where the absorbance is low and the case where the absorbance is high can be combined. Therefore, two-wavelength exposure has been expected as a new exposure method in recent years. However, the previous dry film photoresist is based on the use of lasers (e.g., i-rays) with a single wavelength, especially with a center wavelength of less than 390 nm, or lasers (e.g., h-rays) with a wavelength above 390 nm as the center wavelength. Any one of the above) is designed to show the highest performance when performing exposure, and there is room for improvement in sensitivity, resolution, and adhesion when a dual-wavelength exposure is performed. Patent Document 1 proposes a photosensitive resin composition that is exposed at a wavelength of 390-405 nm using a specific sensitizer. Patent Document 2 describes that a photoresist having a peak in a range of 350-440 nm is favorably used. Photosensitive resin composition for exposure. Further, Patent Document 3 describes a photosensitive resin composition containing a (meth) acrylate compound having a skeleton derived from pentaerythritol for the purpose of improving the adhesion and resolution of a photoresist pattern. In Document 4, a photosensitive resin composition containing a (meth) acrylate compound having a skeleton derived from dipentaerythritol is also proposed for the purpose of improving the adhesion and resolution of a photoresist pattern. Furthermore, in order to improve the sensitivity, resolution, and adhesion characteristics of dry film photoresist, various photosensitive resin compositions have been proposed (Patent Documents 5 and 6). In Patent Document 5, a photosensitive resin composition containing a large amount of a styrene-derived copolymerization component is studied from the viewpoints of the shape of the foot of the photoresist pattern, resolvability, and residual film rate. Furthermore, in Patent Document 6, a photosensitive resin composition suitable for direct laser imaging has been studied. [Prior Art Literature] [Patent Literature] [Patent Literature 1] Japanese Patent Laid-Open No. 2008-217036 [Patent Literature 2] International Publication No. 2007/004619 [Patent Literature 3] Japanese Patent Laid-Open No. 2013-156369 [ Patent Literature 4] International Publication No. 2015/012272 [Patent Literature 5] Japanese Patent Laid-Open No. 2013-61556 [Patent Literature 6] Japanese Patent Laid-Open No. 2013-246387

[發明所欲解決之問題] 然而，於專利文獻1中記載之技術中，應用雙波長曝光時之解像度與密接性有改善之餘地。又，於專利文獻2中記載之技術中，無關於雙波長曝光之考慮。專利文獻3～6中記述之感光性樹脂組合物就向雙波長曝光之應用性之方面而言有進一步改善之餘地，又，亦無關於雙波長曝光之考慮及暗示。 本發明係針對上述所說明之先前技術而完成者，本發明所欲解決之問題係提供一種用於雙波長曝光而賦予優異之曝光感度、密接性及解像性之感光性樹脂組合物。 [解決問題之技術手段] 本發明者發現：藉由以下技術手段可解決上述問題。 [1]一種感光性樹脂組合物，其係用以利用中心波長未達390 nm之第1雷射光與中心波長為390 nm以上之第2雷射光進行曝光而獲得樹脂硬化物者，並且 上述感光性樹脂組合物包含 (A)鹼可溶性高分子、 (B)具有乙烯性雙鍵之化合物、及 (C)光聚合起始劑， 上述感光性樹脂組合物具有對上述第1雷射光及上述第2雷射光兩者之感光性， 上述(C)光聚合起始劑包含蒽及/或蒽衍生物。 [2]如上述態樣1所記載之感光性樹脂組合物，其中上述(A)鹼可溶性高分子中之含芳香族基之共聚合單體之共聚合比率為40質量%以上， 相對於感光性樹脂組合物整體之固形物成分而含有5質量%以上之具有2官能之乙烯性雙鍵且具有1莫耳以上且15莫耳以下之環氧乙烷結構之化合物作為(B)具有乙烯性雙鍵之化合物。 [3]如上述態樣1或2所記載之感光性樹脂組合物，其中上述(A)鹼可溶性高分子中之苯乙烯之共聚合比率為30質量%以上。 [4]如上述態樣1至3中任一項所記載之感光性樹脂組合物，其中上述蒽衍生物於9位及/或10位具有可具有取代基之碳數1～40之烷氧基及/或可具有取代基之碳數6～40之芳基。 [5]如上述態樣1至3中任一項所記載之感光性樹脂組合物，其中上述蒽衍生物於9、10位具有可具有取代基之碳數1～40之烷氧基及/或可具有取代基之碳數6～40之芳基。 [6]如上述態樣1至5中任一項所記載之感光性樹脂組合物，其中上述(C)光聚合起始劑包含9,10-二苯基蒽。 [7]如上述態樣1至5中任一項所記載之感光性樹脂組合物，其中上述(C)光聚合起始劑包含9,10-二丁氧基蒽。 [8]如上述態樣1至7中任一項所記載之感光性樹脂組合物，其中上述(B)具有乙烯性雙鍵之化合物包含具有3官能以上之乙烯性雙鍵之化合物。 [9]如上述態樣1至8中任一項所記載之感光性樹脂組合物，其中上述(B)具有乙烯性雙鍵之化合物包含具有4官能以上之乙烯性雙鍵之化合物。 [10]如上述態樣1至9中任一項所記載之感光性樹脂組合物，其中上述(B)具有乙烯性雙鍵之化合物包含具有6官能以上之乙烯性雙鍵之化合物。 [11]如上述態樣1至10中任一項所記載之感光性樹脂組合物，其中上述(B)具有乙烯性雙鍵之化合物包含碳數3以上之環氧烷結構。 [12]如上述態樣1至11中任一項所記載之感光性樹脂組合物，其中上述第1雷射光之中心波長為350 nm以上且380 nm以下，上述第2雷射光之中心波長為400 nm以上且410 nm以下。 [13]一種感光性樹脂硬化物之製造方法，其包括：利用中心波長未達390 nm之第1雷射光與中心波長為390 nm以上之第2雷射光將如上述態樣1至12中任一項所記載之感光性樹脂組合物加以曝光。 [14]如上述態樣13所記載之感光性樹脂硬化物之製造方法，其中上述第1雷射光之中心波長為350 nm以上且380 nm以下，上述第2雷射光之中心波長為400 nm以上且410 nm以下。 [15]一種光阻圖案之製造方法，其包括： 曝光步驟，其係利用中心波長未達390 nm之第1雷射光與中心波長為390 nm以上之第2雷射光將感光性樹脂組合物加以曝光，該感光性樹脂組合物包含 (A)鹼可溶性高分子、 (B)具有乙烯性雙鍵之化合物、及 (C)光聚合起始劑， 上述(C)光聚合起始劑包含蒽及/或蒽衍生物；及 顯影步驟，其係將曝光後之感光性樹脂組合物予以顯影。 [16]如上述態樣15所記載之光阻圖案之製造方法，其中上述曝光步驟之上述第1雷射光之中心波長為350 nm以上且380 nm以下，上述第2雷射光之中心波長為400 nm以上且410 nm以下。 [17]一種電路基板之製造方法，其係藉由對具有藉由如上述態樣15或16所記載之方法所製造之光阻圖案的基板實施蝕刻或鍍覆而形成電路基板。 [18]一種感光性樹脂組合物，其包含(A)鹼可溶性高分子、(B)具有乙烯性雙鍵之化合物、及(C)光聚合起始劑， 上述(C)光聚合起始劑包含具有鹵素原子之蒽衍生物。 [19]如上述態樣18所記載之感光性樹脂組合物，其中上述(C)光聚合起始劑包含9,10-二烷氧基蒽之鹵素取代物。 [20]如上述態樣19所記載之感光性樹脂組合物，其中上述(C)光聚合起始劑包含9,10-二烷氧基蒽之9位及/或10位之烷氧基經1個以上之鹵素修飾之化合物。 [21]如上述態樣18所記載之感光性樹脂組合物，其中上述(C)光聚合起始劑包含具有直接鍵結於蒽骨架之鹵素原子之化合物。 [22]一種光阻圖案之製造方法，其包括： 曝光步驟，其係利用中心波長未達390 nm之第1雷射光與中心波長為390 nm以上之第2雷射光將如上述態樣18至21中任一項所記載之感光性樹脂組合物加以曝光；及 顯影步驟，其係將曝光後之感光性樹脂組合物予以顯影。 [23]一種感光性樹脂組合物，其係用以利用中心波長未達390 nm之第1雷射光與中心波長為390 nm以上之第2雷射光進行曝光而獲得樹脂硬化物者，並且 上述感光性樹脂組合物包含(A)鹼可溶性高分子、(B)具有乙烯性雙鍵之化合物、及(C)光聚合起始劑， 上述(A)鹼可溶性高分子中之含芳香族基之共聚合單體之共聚合比率為40質量%以上。 [24]如上述態樣23所記載之感光性樹脂組合物，其相對於感光性樹脂組合物整體之固形物成分而含有5質量%以上之具有2官能之乙烯性雙鍵且具有1莫耳以上且15莫耳以下之環氧乙烷結構之化合物作為上述(B)具有乙烯性雙鍵之化合物。 [25]一種光阻圖案之製造方法，其包括： 曝光步驟，其係利用中心波長未達390 nm之第1雷射光與中心波長為390 nm以上之第2雷射光將如上述態樣23或24所記載之感光性樹脂組合物加以曝光；及 顯影步驟，其係將曝光後之感光性樹脂組合物予以顯影。 [發明之效果] 根據本發明，可提供一種用於雙波長曝光而賦予優異之曝光感度、密接性及解像性之感光性樹脂組合物。[Problems to be Solved by the Invention] However, in the technique described in Patent Document 1, there is room for improvement in resolution and adhesion when two-wavelength exposure is applied. In addition, in the technique described in Patent Document 2, there is no consideration regarding two-wavelength exposure. The photosensitive resin composition described in Patent Documents 3 to 6 has room for further improvement in terms of applicability to dual-wavelength exposure, and there is no consideration or suggestion regarding dual-wavelength exposure. The present invention has been made in view of the above-mentioned prior art, and a problem to be solved by the present invention is to provide a photosensitive resin composition that provides excellent exposure sensitivity, adhesion, and resolution for dual-wavelength exposure. [Technical means to solve the problem] The present inventors have found that the above-mentioned problems can be solved by the following technical means. [1] A photosensitive resin composition for exposing a hardened resin by exposing a first laser light having a center wavelength of less than 390 nm and a second laser light having a center wavelength of 390 nm or more, and The photosensitive resin composition includes (A) an alkali-soluble polymer, (B) a compound having an ethylenic double bond, and (C) a photopolymerization initiator, and the photosensitive resin composition has a property to the first laser light and the first 2 Photosensitivity of both laser light, and the (C) photopolymerization initiator includes anthracene and / or anthracene derivative. [2] The photosensitive resin composition according to the aspect 1, wherein the copolymerization ratio of the aromatic group-containing copolymerization monomer in the (A) alkali-soluble polymer is 40% by mass or more, relative to the photosensitivity The compound of the solid resin composition as a whole contains 5% by mass or more of a compound having a difunctional ethylenic double bond and having an ethylene oxide structure of 1 mol to 15 mol. Compounds with double bonds. [3] The photosensitive resin composition according to the aspect 1 or 2, wherein the copolymerization ratio of the styrene in the (A) alkali-soluble polymer is 30% by mass or more. [4] The photosensitive resin composition according to any one of aspects 1 to 3, wherein the anthracene derivative has an alkoxy group having 1 to 40 carbon atoms which may have a substituent at the 9-position and / or the 10-position And / or an aryl group having 6 to 40 carbon atoms which may have a substituent. [5] The photosensitive resin composition according to any one of aspects 1 to 3, wherein the anthracene derivative has an alkoxy group having 1 to 40 carbon atoms which may have a substituent at 9, 10 positions and / Or an aryl group having 6 to 40 carbon atoms which may have a substituent. [6] The photosensitive resin composition according to any one of aspects 1 to 5, wherein the (C) photopolymerization initiator contains 9,10-diphenylanthracene. [7] The photosensitive resin composition according to any one of aspects 1 to 5, wherein the (C) photopolymerization initiator contains 9,10-dibutoxyanthracene. [8] The photosensitive resin composition according to any one of aspects 1 to 7, wherein the compound (B) having an ethylenic double bond includes a compound having a trifunctional or more ethylenic double bond. [9] The photosensitive resin composition according to any one of aspects 1 to 8, wherein the compound (B) having an ethylenic double bond includes a compound having a tetrafunctional or more ethylenic double bond. [10] The photosensitive resin composition according to any one of aspects 1 to 9, wherein the compound (B) having an ethylenic double bond includes a compound having an ethylenic double bond having 6 or more functions. [11] The photosensitive resin composition according to any one of aspects 1 to 10, wherein the compound (B) having an ethylenic double bond includes an alkylene oxide structure having a carbon number of 3 or more. [12] The photosensitive resin composition according to any one of aspects 1 to 11, wherein the center wavelength of the first laser light is 350 nm to 380 nm, and the center wavelength of the second laser light is Above 400 nm and below 410 nm. [13] A method for manufacturing a photosensitive resin hardened material, comprising: using the first laser light having a center wavelength of less than 390 nm and the second laser light having a center wavelength of 390 nm or more as described in any of the above aspects 1 to 12 The photosensitive resin composition according to one item is exposed. [14] The method for manufacturing a photosensitive resin hardened body according to the aspect 13, wherein the center wavelength of the first laser light is 350 nm or more and 380 nm or less, and the center wavelength of the second laser light is 400 nm or more And below 410 nm. [15] A method for manufacturing a photoresist pattern, comprising: an exposure step of applying a photosensitive resin composition using a first laser light having a center wavelength of less than 390 nm and a second laser light having a center wavelength of 390 nm or more Upon exposure, the photosensitive resin composition includes (A) an alkali-soluble polymer, (B) a compound having an ethylenic double bond, and (C) a photopolymerization initiator, and the (C) photopolymerization initiator includes anthracene and And / or an anthracene derivative; and a developing step of developing the photosensitive resin composition after exposure. [16] The method for manufacturing the photoresist pattern according to the aspect 15, wherein the central wavelength of the first laser light in the exposure step is 350 nm to 380 nm, and the central wavelength of the second laser light is 400 Above nm and below 410 nm. [17] A method for manufacturing a circuit board, which comprises forming a circuit board by etching or plating a substrate having a photoresist pattern manufactured by the method described in aspect 15 or 16 above. [18] A photosensitive resin composition comprising (A) an alkali-soluble polymer, (B) a compound having an ethylenic double bond, and (C) a photopolymerization initiator, and (C) the photopolymerization initiator Contains anthracene derivatives having a halogen atom. [19] The photosensitive resin composition according to the aspect 18, wherein the (C) photopolymerization initiator contains a halogen substituted product of 9,10-dialkoxyanthracene. [20] The photosensitive resin composition according to the aspect 19, wherein the (C) photopolymerization initiator includes a 9-position and / or a 10-position alkoxy group of 9,10-dialkoxyanthracene 1 or more halogen-modified compounds. [21] The photosensitive resin composition according to aspect 18, wherein the (C) photopolymerization initiator includes a compound having a halogen atom directly bonded to an anthracene skeleton. [22] A method for manufacturing a photoresist pattern, comprising: an exposure step, which uses first laser light having a central wavelength of less than 390 nm and second laser light having a central wavelength of 390 nm or more. The photosensitive resin composition according to any one of 21 is exposed; and the developing step is to develop the photosensitive resin composition after exposure. [23] A photosensitive resin composition, which is used to obtain a hardened resin by exposing a first laser light with a center wavelength of less than 390 nm and a second laser light with a center wavelength of 390 nm or more, and The resin composition contains (A) an alkali-soluble polymer, (B) a compound having an ethylenic double bond, and (C) a photopolymerization initiator. The above-mentioned (A) alkali-soluble polymer contains an aromatic group-containing copolymer. The copolymerization ratio of the polymerization monomer is 40% by mass or more. [24] The photosensitive resin composition according to the aspect 23, which contains 5% by mass or more of a difunctional ethylenic double bond and 1 mol to the solid content of the entire photosensitive resin composition. The compound having an ethylene oxide structure of 15 mol or more is a compound having an ethylenic double bond in the (B). [25] A method for manufacturing a photoresist pattern, comprising: an exposure step that uses a first laser light having a center wavelength of less than 390 nm and a second laser light having a center wavelength of 390 nm or more as described above in the aspect 23 or The photosensitive resin composition described in 24 is exposed; and the developing step is to develop the photosensitive resin composition after exposure. [Effects of the Invention] According to the present invention, it is possible to provide a photosensitive resin composition that is used for two-wavelength exposure and provides excellent exposure sensitivity, adhesion, and resolution.

以下，對用以實施本發明之形態(以下簡稱為「本實施形態」)具體地進行說明，但本發明不限定於該等形態。 ＜感光性樹脂組合物＞ 於本實施形態中，感光性樹脂組合物包含(A)鹼可溶性高分子、(B)具有乙烯性雙鍵(即乙烯性不飽和鍵)之化合物、及(C)光聚合起始劑。(C)光聚合起始劑包含蒽及/或蒽衍生物。感光性樹脂組合物視需要可進而包含(D)添加劑等其他成分。又，於本實施形態中，感光性樹脂組合物可藉由應用於任意之支持體而形成感光性樹脂層。 本實施形態之感光性樹脂組合物具有對於中心波長未達390 nm之第1活性光與中心波長為390 nm以上之第2活性光兩者之感光性。因此，本實施形態之感光性樹脂組合物具有對於利用上述第1活性光與上述第2活性光進行曝光而獲得樹脂硬化物較佳之特定組成。第1活性光之中心波長較佳為350～380 nm，更佳為355～375 nm，尤佳為375 nm。第2活性光之中心波長較佳為400～410 nm，更佳為402～408 nm，尤佳為405 nm(h射線)。 以下，對感光性樹脂組合物中所包含之各成分進行說明。 (A)鹼可溶性高分子 (A)鹼可溶性高分子係可溶解於鹼性物質之高分子。就鹼顯影性之觀點而言，(A)鹼可溶性高分子較佳為具有羧基，而且進而較佳為含有含羧基單體作為共聚合成分之共聚物。(A)鹼可溶性高分子亦可為熱塑性。 就光阻圖案之高解像性及麓部形狀之觀點而言，感光性樹脂組合物較佳為包含具有芳香族基之共聚物作為(A)鹼可溶性高分子。感光性樹脂組合物尤佳為包含於側鏈具有芳香族基之共聚物作為(A)鹼可溶性高分子。作為此種芳香族基，例如可列舉：經取代或未經取代之苯基、或經取代或未經取代之芳烷基。具有芳香族基之共聚物於(A)成分中所占之比率較佳為30質量%以上，更佳為40質量%以上，更佳為50質量%以上，更佳為70質量%以上，進而較佳為80質量%以上。上述比率亦可為100質量%，但就維持良好之鹼可溶性之觀點而言，宜較佳為95質量%以下，更佳為90質量%以下，進而較佳為85質量%。 就光阻圖案之高解像性及麓部形狀之觀點而言，(A)鹼可溶性高分子中之具有芳香族基之共聚合單體之共聚合比率較佳為40質量%以上，較佳為50質量%以上，較佳為60質量%以上，較佳為70質量%以上，較佳為80質量%以上。共聚合比率之上限並無特別限制，就維持良好之鹼可溶性之觀點而言，較佳為95質量%以下，更佳為90質量%以下。 作為上述具有芳香族基之共聚合單體，例如可列舉：具有芳烷基之單體、苯乙烯、及可進行聚合之苯乙烯衍生物(例如甲基苯乙烯、乙烯基甲苯、第三丁氧基苯乙烯、乙醯氧基苯乙烯、4-乙烯基苯甲酸、苯乙烯二聚物、苯乙烯三聚物等)。其中，較佳為具有芳烷基之單體、及苯乙烯，更佳為具有芳烷基之單體。 於具有芳香族基之共聚合單體包含苯乙烯之情形時，就光阻圖案之高解像性及麓部形狀之觀點而言，(A)鹼可溶性高分子中之苯乙烯之共聚合比率較佳為30質量%以上，進而較佳為50質量%以上，就維持良好之鹼可溶性之觀點而言，較佳為80質量%以下，更佳為70質量%以下，進而較佳為60質量%以下。 作為芳烷基，可列舉經取代或未經取代之苄基、經取代或未經取代之苯基烷基(苄基除外)等，較佳為經取代或未經取代之苄基。 作為具有苄基之共聚合單體，可列舉：具有苄基之(甲基)丙烯酸酯、例如(甲基)丙烯酸苄酯、(甲基)丙烯酸氯苄酯等；具有苄基之乙烯基單體、例如乙烯基苄基氯、乙烯基苄醇等。其中，較佳為(甲基)丙烯酸苄酯。 作為具有苯基烷基(苄基除外)之共聚合單體，可列舉(甲基)丙烯酸苯基乙酯等。 於側鏈具有芳香族基(較佳為苄基)之共聚物較佳為藉由使(i)具有芳香族基之單體與(ii)下述第一單體之至少1種及/或下述第二單體之至少1種進行聚合而獲得。 於側鏈具有芳香族基之共聚物以外之(A)鹼可溶性高分子較佳為藉由使下述第一單體之至少1種進行聚合而獲得，更佳為藉由使下述第一單體之至少1種與下述第二單體之至少1種進行共聚合而獲得。 第一單體係分子中具有羧基之單體。作為第一單體，例如可列舉：(甲基)丙烯酸、富馬酸、桂皮酸、丁烯酸、伊康酸、4-乙烯基苯甲酸、馬來酸酐、馬來酸半酯等。該等中，較佳為(甲基)丙烯酸。 再者，於本說明書中，所謂「(甲基)丙烯酸」，意指丙烯酸或甲基丙烯酸，所謂「(甲基)丙烯醯基」，意指丙烯醯基或甲基丙烯醯基，而且，所謂「(甲基)丙烯酸酯」，意指「丙烯酸酯」或「甲基丙烯酸酯」。 以藉由使第一單體之至少1種進行聚合而獲得之聚合物之全部單體成分之合計質量為基準而第一單體之共聚合比率較佳為10～50質量%。就表現出良好之顯影性之觀點、控制邊緣熔融性等觀點而言，該共聚合比率較佳為10質量%以上。就光阻圖案之高解像性及麓部形狀之觀點而言、進而就光阻圖案之耐化學品性之觀點而言，該共聚合比率較佳為50質量%以下，更佳為30質量%以下，進而較佳為25質量%以下，尤佳為22質量%以下，最佳為20質量%以下。 第二單體係非酸性且分子中具有至少1個聚合性不飽和基之單體。作為第二單體，例如可列舉：(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸2-乙基己酯等(甲基)丙烯酸酯類；乙酸乙烯酯等乙烯醇之酯類；以及(甲基)丙烯腈等。其中，較佳為(甲基)丙烯酸甲酯、(甲基)丙烯酸2-乙基己酯、及(甲基)丙烯酸正丁酯。 (A)鹼可溶性高分子可藉由利用已知之聚合法、較佳為加成聚合、更佳為自由基聚合使上述所說明之一種或複數種單體進行聚合而製備。 單體含有具有芳烷基之單體及/或苯乙烯就光阻圖案之耐化學品性、密接性、高解像性、或麓部形狀之觀點而言較佳。作為(A)鹼可溶性高分子，尤佳為：包含甲基丙烯酸、甲基丙烯酸苄酯、及苯乙烯之共聚物；包含甲基丙烯酸、甲基丙烯酸甲酯、甲基丙烯酸苄酯、及苯乙烯之共聚物等。 就光阻圖案之耐化學品性、密接性、高解像性、或麓部形狀之觀點而言，根據Fox式所求出之(A)鹼可溶性高分子之玻璃轉移溫度(於(A)成分包含複數種共聚物之情形時，為關於其混合物整體之玻璃轉移溫度Tg、即玻璃轉移溫度之重量平均值Tgtotal )較佳為110℃以下，更佳為107℃以下、105℃以下、100℃以下、95℃以下、90℃以下、或80℃以下。(A)鹼可溶性高分子之玻璃轉移溫度(Tg)之下限值並無限定，就控制邊緣熔融性之觀點而言，較佳為30℃以上，更佳為50℃以上，進而較佳為60℃以上。 (A)鹼可溶性高分子之酸當量(於(A)成分包含複數種共聚物之情形時，為關於其混合物整體之酸當量)就感光性樹脂層之耐顯影性、以及光阻圖案之解像性及密接性之觀點而言，較佳為100以上，就感光性樹脂層之顯影性及剝離性之觀點而言，較佳為600以下。(A)鹼可溶性高分子之酸當量更佳為200～500，進而較佳為250～450。 (A)鹼可溶性高分子之重量平均分子量(於(A)成分包含複數種共聚物之情形時，為關於其混合物整體之重量平均分子量)較佳為5,000～500,000。(A)鹼可溶性高分子之重量平均分子量就將乾膜光阻之厚度維持為均一，獲得對顯影液之耐性之觀點而言，較佳為5,000以上，就維持乾膜光阻之顯影性之觀點、光阻圖案之高解像性及麓部形狀之觀點、以及光阻圖案之耐化學品性之觀點而言，較佳為500,000以下。(A)鹼可溶性高分子之重量平均分子量更佳為10,000～200,000，進而較佳為20,000～100,000，尤佳為30,000～70,000。(A)鹼可溶性高分子之分子量之分散度較佳為1.0～6.0。 感光性樹脂組合物中之(A)鹼可溶性高分子之含量以感光性樹脂組合物之固形物成分總量為基準(以下，只要未特別明示，則於各含有成分中相同)而較佳為10質量%～90質量%，更佳為20質量%～80質量%，進而較佳為40質量%～60質量%之範圍內。(A)鹼可溶性高分子之含量就維持感光性樹脂層之鹼顯影性之觀點而言，較佳為10質量%以上，就藉由曝光而形成之光阻圖案充分地發揮作為光阻材料之性能之觀點、光阻圖案之高解像性及光阻圖案之麓部形狀之觀點、以及光阻圖案之耐化學品性之觀點而言，較佳為90質量%以下，更佳為80質量%以下，更佳為70質量%以下，進而較佳為60質量%以下。 (B)具有乙烯性不飽和鍵之化合物 (B)具有乙烯性不飽和鍵之化合物係藉由在其結構中具有乙烯性不飽和基而具有聚合性之化合物。 就密接性之觀點、及抑制顯影液發泡性之觀點而言，(B)具有乙烯性不飽和鍵之化合物較佳為具有碳數3以上之環氧烷結構。環氧烷結構之碳數更佳為3～6，進而較佳為3～4。 就光阻圖案之耐化學品性、密接性、高解像性或麓部形狀之觀點而言，本實施形態之感光性樹脂組合物較佳為包含(b1)具有3個以上之乙烯性不飽和鍵之(即3官能以上之)(甲基)丙烯酸酯化合物作為(B)具有乙烯性不飽和鍵之化合物。就密接性及解像性之方面而言，進而較佳為具有4個以上之乙烯性不飽和鍵之(即4官能以上之)(甲基)丙烯酸酯化合物，尤佳為具有6個以上之乙烯性不飽和鍵(即6官能以上之)(甲基)丙烯酸酯化合物。乙烯性不飽和鍵更佳為源自甲基丙烯醯基。 作為(b1)具有3個以上之乙烯性不飽和鍵之(甲基)丙烯酸酯化合物，可列舉： 三(甲基)丙烯酸酯、例如乙氧基化甘油三(甲基)丙烯酸酯、乙氧基化異三聚氰酸三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、及三羥甲基丙烷三(甲基)丙烯酸酯(例如，作為就柔軟性、密接性、及抑制滲出之觀點而言之較佳例，為對三羥甲基丙烷加成平均21莫耳之環氧乙烷而成之三(甲基)丙烯酸酯、及對三羥甲基丙烷加成平均30莫耳之環氧乙烷而成之三(甲基)丙烯酸酯)等； 四(甲基)丙烯酸酯、例如二-三羥甲基丙烷四(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇四(甲基)丙烯酸酯等； 五(甲基)丙烯酸酯、例如二季戊四醇五(甲基)丙烯酸酯等； 六(甲基)丙烯酸酯、例如二季戊四醇六(甲基)丙烯酸酯等。 該等中，較佳為四、五或六(甲基)丙烯酸酯。 就抑制滲出之觀點而言，(b1)具有3個以上之乙烯性不飽和鍵之(甲基)丙烯酸酯化合物具有較佳為500以上、更佳為700以上、進而較佳為900以上之重量平均分子量。 作為四(甲基)丙烯酸酯，較佳為季戊四醇四(甲基)丙烯酸酯。作為季戊四醇四(甲基)丙烯酸酯，較佳為對季戊四醇之4個末端加成有合計1～40莫耳之環氧烷的四(甲基)丙烯酸酯等。 四(甲基)丙烯酸酯更佳為下述通式(I)所表示之四甲基丙烯酸酯化合物： [化1]{式中，R3 ～R6 分別獨立地表示碳數1～4之烷基，X表示碳數2～6之伸烷基，m1 、m2 、m3 及m4 分別獨立地為0～40之整數，m1 ＋m2 ＋m3 ＋m4 為1～40，而且於m1 ＋m2 ＋m3 ＋m4 為2以上之情形時，複數個X可相互相同或互不相同}。 雖然不希望受到理論所束縛，但認為通式(I)所表示之四甲基丙烯酸酯化合物藉由具有基R3 ～R6 ，而與具有H2 C=CH-CO-O-部分之四丙烯酸酯相比，於鹼性溶液中之水解性得到抑制。使用包含通式(I)所表示之四甲基丙烯酸酯化合物之感光性樹脂組合物就提高光阻圖案之解像性、詳細而言線形狀、更詳細而言線之麓部形狀、以及光阻之密接性之觀點而言較佳。 於通式(I)中，較佳為基R3 ～R6 之至少一者為甲基，而且更佳為基R3 ～R6 全部為甲基。 就關於光阻圖案而獲得所需之解像性、麓部形狀及殘膜率之觀點而言，於通式(I)中，X較佳為-CH2 -CH2 -。 就關於光阻圖案而獲得所需之解像性、麓部形狀及殘膜率之觀點而言，於通式(I)中，m1 、m2 、m3 及m4 分別獨立地較佳為1～20之整數，更佳為2～10之整數。進而，於通式(I)中，m1 ＋m2 ＋m3 ＋m4 較佳為1～36或4～36。 作為通式(I)所表示之化合物，例如可列舉季戊四醇(聚)烷氧基四甲基丙烯酸酯等。又，於本揭示中，「季戊四醇(聚)烷氧基四甲基丙烯酸酯」包括上述通式(I)中m1 ＋m2 ＋m3 ＋m4 ＝1之「季戊四醇烷氧基四甲基丙烯酸酯」及m1 ＋m2 ＋m3 ＋m4 ＝2～40之「季戊四醇聚烷氧基四甲基丙烯酸酯」兩者。作為通式(I)所表示之化合物，可列舉：日本專利特開2013-156369號公報中所列舉之化合物、例如季戊四醇(聚)烷氧基四甲基丙烯酸酯等。 作為六(甲基)丙烯酸酯化合物，較佳為對二季戊四醇之6個末端加成有合計1～24莫耳之環氧乙烷的六(甲基)丙烯酸酯、對二季戊四醇之6個末端加成有合計1～10莫耳之ε-己內酯的六(甲基)丙烯酸酯。 就光阻圖案之耐化學品性、密接性、高解像性及麓部形狀之觀點而言，本實施形態之感光性樹脂組合物尤佳為包含具有4個以上之乙烯性不飽和鍵且具有環氧烷鏈之(甲基)丙烯酸酯化合物作為(B)具有乙烯性不飽和鍵之化合物。於該情形時，乙烯性不飽和鍵更佳為源自甲基丙烯醯基，而且環氧烷鏈更佳為環氧乙烷鏈。 於本實施形態中，就光阻圖案之耐化學品性、密接性、高解像性或麓部形狀之觀點而言，感光性樹脂組合物較佳為包含具有環氧烷鏈及二季戊四醇骨架之(甲基)丙烯酸酯化合物作為(B)具有乙烯性不飽和鍵之化合物。作為環氧烷鏈，例如可列舉：環氧乙烷鏈、環氧丙烷鏈、環氧丁烷鏈、環氧戊烷鏈、環氧己烷鏈等。於感光性樹脂組合物包含複數種環氧烷鏈之情形時，其等可相互相同亦可互不相同。就上述觀點而言，作為環氧烷鏈，更佳為環氧乙烷鏈、環氧丙烷鏈、及環氧丁烷鏈，進而較佳為環氧乙烷鏈、及環氧丙烷鏈，尤佳為環氧乙烷鏈。 於感光性樹脂組合物中，藉由將(A)鹼可溶性高分子與具有環氧烷鏈及二季戊四醇骨架之(甲基)丙烯酸酯化合物併用，而有保持光阻圖案之耐化學品性、密接性及解像性之平衡性的傾向。 具有環氧烷鏈及二季戊四醇骨架之(甲基)丙烯酸酯化合物係利用伸烷基氧基將複數個羥基之至少一個加以改性之二季戊四醇化合物與(甲基)丙烯酸之酯。亦可利用伸烷基氧基將二季戊四醇骨架之6個羥基加以改性。一分子該酯中之酯鍵之數量可為1～6，較佳為6。 作為具有環氧烷鏈及二季戊四醇骨架之(甲基)丙烯酸酯化合物，例如可列舉：對二季戊四醇加成有平均4～30莫耳、平均6～24莫耳、或平均10～14莫耳之環氧烷的六(甲基)丙烯酸酯。 具體而言，作為具有環氧烷鏈及二季戊四醇骨架之(甲基)丙烯酸酯化合物，就光阻圖案之耐化學品性、密接性、高解像性及麓部形狀之觀點而言，較佳為下述通式(III)所表示之化合物： [化2]{式中，R分別獨立地表示氫原子或甲基，且n為0～30之整數，且全部n之合計值為1以上}。於通式(III)中，較佳為全部n之平均值為4以上或n分別為1以上。作為R，較佳為甲基。 就光阻圖案之耐化學品性之觀點而言，相對於感光性樹脂組合物中之固形物成分總量之具有環氧烷鏈及二季戊四醇骨架之(甲基)丙烯酸酯化合物的含量較佳為1質量%～50質量%，更佳為5質量%～40質量%，進而較佳為7質量%～30質量%之範圍內。 (b1)具有3個以上之乙烯性不飽和鍵之(甲基)丙烯酸酯化合物之含量相對於感光性樹脂組合物之固形物成分總量較佳為超過0質量%且為40質量%以下。若該含量超過0質量%，則有解像度及密接性提高之傾向，若為40質量%以下，則有硬化光阻之柔軟性改善且剝離時間縮短之傾向。該含量更佳為2質量%以上且30質量%以下，進而較佳為4質量%以上且25質量%以下。 就密接性之觀點、及抑制顯影液發泡性之觀點而言，感光性樹脂組合物較佳為包含(b2)具有環氧丁烷鏈或環氧丙烷鏈、及1個或2個(甲基)丙烯醯基之化合物作為(B)具有乙烯性不飽和鍵之化合物。 就抑制滲出之觀點而言，(b2)具有環氧丁烷鏈或環氧丙烷鏈、及1個或2個(甲基)丙烯醯基之化合物具有較佳為500以上、更佳為700以上、進而較佳為1000以上之分子量。 作為(b2)具有環氧丁烷鏈或環氧丙烷鏈、及1個或2個(甲基)丙烯醯基之化合物，可列舉：聚丙二醇(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯、聚四亞甲基二醇(甲基)丙烯酸酯、聚四亞甲基二醇二(甲基)丙烯酸酯等。(b2)具有環氧丁烷鏈或環氧丙烷鏈、及1個或2個(甲基)丙烯醯基之化合物除環氧丁烷鏈或環氧丙烷鏈以外亦可包含環氧乙烷鏈。 具體而言，(b2)具有環氧丁烷鏈或環氧丙烷鏈、及1個或2個(甲基)丙烯醯基之化合物較佳為具有1～20個、更佳為4～15個、進而較佳為6～12個C4 H8 O或C3 H6 O之(甲基)丙烯酸酯或二(甲基)丙烯酸酯。 (b2)具有環氧丁烷鏈或環氧丙烷鏈、及1個或2個(甲基)丙烯醯基之化合物之含量相對於感光性樹脂組合物之固形物成分總量較佳為超過0質量%且為20質量%以下。 感光性樹脂組合物可包含(b3)具有芳香環及乙烯性不飽和鍵之化合物作為(B)具有乙烯性不飽和鍵之化合物。 (b3)具有芳香環及乙烯性不飽和鍵之化合物亦可進而具有環氧烷鏈。芳香環較佳為以源自雙酚A之2價骨架、源自萘之2價骨架、伸苯基、甲基伸苯基等2價芳香族基等之形式被組入至化合物中。環氧烷鏈可為環氧乙烷鏈、環氧丙烷鏈、或該等之組合。乙烯性不飽和鍵較佳為以(甲基)丙烯醯基之形式被組入至(b3)具有芳香環及乙烯性不飽和鍵之化合物中。 具體而言，作為(b3)具有芳香環及乙烯性不飽和鍵之化合物，可使用下述通式(II)所表示之化合物： [化3]{式中，R1 及R2 分別獨立地表示氫原子或甲基，A為C2 H4 ，B為C3 H6 ，n1 及n3 分別獨立地為1～39之整數，且n1 ＋n3 為2～40之整數，n2 及n4 分別獨立地為0～29之整數，且n2 ＋n4 為0～30之整數，-(A-O)-及-(B-O)-之重複單元之排列可為無規，亦可為嵌段，於為嵌段之情形時，-(A-O)-與-(B-O)-均可為聯苯基側}。 例如，對雙酚A之兩端分別加成平均各5莫耳之環氧乙烷而成之聚乙二醇之二甲基丙烯酸酯、對雙酚A之兩端分別加成平均各2莫耳之環氧乙烷而成之聚乙二醇之二甲基丙烯酸酯、對雙酚A之兩端分別加成平均各1莫耳之環氧乙烷而成之聚乙二醇之二甲基丙烯酸酯等就解像性、及密接性之方面而言較佳。 又，上述通式(II)中之芳香環亦可使用具有雜原子及/或取代基之化合物。 作為雜原子，例如可列舉鹵素原子等，而且作為取代基，可列舉：碳數1～20之烷基、碳數3～10之環烷基、碳數6～18之芳基、苯甲醯甲基、胺基、碳數1～10之烷基胺基、碳數2～20之二烷基胺基、硝基、氰基、羰基、巰基、碳數1～10之烷基巰基、芳基、羥基、碳數1～20之羥基烷基、羧基、烷基之碳數為1～10之羧基烷基、烷基之碳數為1～10之醯基、碳數1～20之烷氧基、碳數1～20之烷氧基羰基、碳數2～10之烷基羰基、碳數2～10之烯基、碳數2～10之N-烷基胺甲醯基或包含雜環之基、或者經該等取代基取代之芳基等。該等取代基亦可形成縮合環或該等取代基中之氫原子被取代為鹵素原子等雜原子。於通式(II)中之芳香環具有複數個取代基之情形時，複數個取代基可相同或不同。 (b3)具有芳香環及乙烯性不飽和鍵之化合物之含量相對於感光性樹脂組合物之固形物成分總量較佳為超過0質量%且為50質量%以下。若該含量超過0質量%，則有解像度及密接性改善之傾向。就顯影時間及邊緣熔融之觀點而言，該含量較佳為50質量%以下。 就光阻圖案之密接性及柔軟性、顯影性、以及抑制顯影液浮沫之觀點而言，本實施形態之感光性樹脂組合物尤佳為含有(b4)於1分子中含有1莫耳以上且15莫耳以下之環氧乙烷結構且於1分子中具有2個乙烯性不飽和鍵之化合物作為(B)具有乙烯性不飽和鍵之化合物。環氧乙烷結構之量就光阻圖案之柔軟性、顯影性、及抑制顯影液浮沫之觀點而言，較佳為1莫耳以上，就光阻圖案之密接性之觀點而言，較佳為15莫耳以下。又，就光阻圖案密接性、及光阻圖案柔軟性之觀點而言，較佳為於1分子中含有2個乙烯性不飽和鍵。作為乙烯性不飽和鍵，尤佳為(甲基)丙烯醯基。 (b4)於1分子中含有1莫耳以上且15莫耳以下之環氧乙烷結構且於1分子中具有2個乙烯性不飽和鍵之化合物較佳為進而包含芳香環。 作為(b4)於1分子中含有1莫耳以上且15莫耳以下之環氧乙烷結構且於1分子中具有2個乙烯性不飽和鍵之化合物，可列舉：對雙酚A之兩端分別加成平均各7.5莫耳之環氧乙烷而成之聚乙二醇之二(甲基)丙烯酸酯、對雙酚A之兩端分別加成平均各5莫耳之環氧乙烷而成之聚乙二醇之二(甲基)丙烯酸酯、對雙酚A之兩端分別加成平均各2莫耳之環氧乙烷而成之聚乙二醇之二(甲基)丙烯酸酯、對雙酚A之兩端分別加成平均各1莫耳之環氧乙烷而成之聚乙二醇之二(甲基)丙烯酸酯、對氫化雙酚A之兩端分別加成平均各5莫耳之環氧乙烷而成之聚乙二醇之二(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、九乙二醇二(甲基)丙烯酸酯等。該等中，尤佳為對雙酚A之兩端分別加成平均各5莫耳之環氧乙烷而成之聚乙二醇之二(甲基)丙烯酸酯。 (b4)於1分子中含有1莫耳以上且15莫耳以下之環氧乙烷結構且於1分子中具有2個乙烯性不飽和鍵之化合物之量相對於感光性樹脂組合物之固形物成分總量較佳為5質量%以上，進而較佳為10質量%以上，尤佳為15質量%以上，就光阻圖案之耐鹼性之觀點而言，較佳為50質量%以下。 於使用(b4)於1分子中含有1莫耳以上且15莫耳以下之環氧乙烷結構且於1分子中具有2個乙烯性不飽和鍵之化合物之情形時，(A)鹼可溶性高分子中之含芳香族基之共聚合單體之共聚合比率為40質量%以上、尤其是(A)鹼可溶性高分子中之苯乙烯之共聚合比率為30質量%以上就密接性、感度、及解像度之方面而言較佳。 上述所說明之具有環氧烷鏈及二季戊四醇骨架之(甲基)丙烯酸酯化合物、以及(b1)～(b4)化合物可分別獨立使用或組合而使用。感光性樹脂組合物亦可不僅包含具有環氧烷鏈及二季戊四醇骨架之(甲基)丙烯酸酯化合物以及(b1)～(b4)化合物而亦包含其他化合物作為(B)具有乙烯性不飽和鍵之化合物。 作為其他化合物，可列舉：具有至少1個(甲基)丙烯醯基之丙烯酸酯化合物、具有胺基甲酸酯鍵之(甲基)丙烯酸酯、使α,β-不飽和羧酸與多元醇進行反應而獲得之化合物、使α,β-不飽和羧酸與含縮水甘油基化合物進行反應而獲得之化合物、苯二甲酸系化合物等。其中，就解像度、密接性及剝離時間之觀點而言，較佳為具有至少2個(甲基)丙烯醯基之(甲基)丙烯酸酯化合物。具有至少2個(甲基)丙烯醯基之(甲基)丙烯酸酯化合物可為二、三、四、五、六(甲基)丙烯酸酯等。例如，聚乙二醇二(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯、具有環氧乙烷與聚環氧丙烷兩者之二(甲基)丙烯酸酯(例如「FA-023M、FA-024M、FA-027M，製品名，日立化成工業製造」)就柔軟性、解像性、密接性等觀點而言較佳。 又，4-正壬基苯氧基八乙二醇丙烯酸酯、4-正壬基苯氧基四乙二醇丙烯酸酯、鄰苯二甲酸γ-氯-β-羥基丙酯β'-甲基丙烯醯氧基乙酯之類的具有1個乙烯性不飽和鍵之化合物就剝離性及硬化膜柔軟性之觀點而言較佳，鄰苯二甲酸γ-氯-β-羥基丙酯β'-甲基丙烯醯氧基乙酯就感度、解像性、及密接性之觀點而言亦較佳。 於本實施形態中，為了抑制乾膜光阻之構成成分之滲出而提高保存穩定性，以(B)具有乙烯性不飽和鍵之化合物之固形物成分總量為基準而較佳為70質量%以上、更佳為80質量%以上、進而較佳為90質量%以上、尤佳為100質量%為具有500以上之重量平均分子量之化合物。就抑制滲出及光阻圖案之耐化學品性之觀點而言，(B)具有乙烯性不飽和鍵之化合物之重量平均分子量較佳為760以上，更佳為800以上，進而較佳為830以上，尤佳為900以上。(B)具有乙烯性不飽和鍵之化合物之重量平均分子量能夠以根據(B)具有乙烯性不飽和鍵之化合物之分子結構所計算之分子量之形式而求出。於存在複數種(B)具有乙烯性不飽和鍵之化合物之情形時，可藉由根據含量對各化合物之分子量進行加權平均而求出。 就光阻圖案之耐化學品性、密接性、高解像性、及麓部形狀之觀點而言，(B)具有乙烯性不飽和鍵之化合物中之甲基丙烯醯基之濃度較佳為0.20 mol/100 g以上，更佳為0.30 mol/100 g以上，進而較佳為0.35 mol/100 g以上。甲基丙烯醯基之濃度之上限值只要可確保聚合性及鹼顯影性，則無限定，例如可為0.90 mol/100 g以下或0.80 mol/100 g以下。 就同樣之觀點而言，(B)具有乙烯性不飽和鍵之化合物中之甲基丙烯醯基之濃度/(甲基丙烯醯基之濃度＋丙烯醯基之濃度)之值較佳為0.50以上，更佳為0.60以上，進而較佳為0.80以上，尤佳為0.90以上，最佳為0.95以上。 於本實施形態中，就提高光阻圖案之密接性且抑制光阻圖案之硬化不良、顯影時間之延遲、冷流、滲出、及硬化光阻之剝離延遲之觀點而言，感光性樹脂組合物中之全部(B)具有乙烯性不飽和鍵之化合物之總含量相對於感光性樹脂組合物之固形物成分總量較佳為1質量%～70質量%，更佳為2質量%～60質量%，進而較佳為4質量%～50質量%之範圍內。 (C)光聚合起始劑 (C)光聚合起始劑係利用光使單體進行聚合之化合物。感光性樹脂組合物可包含本技術領域中通常已知之化合物作為(C)光聚合起始劑。於本實施形態中，(C)光聚合起始劑包含吸收中心波長未達390 nm之第1活性光與中心波長為390 nm以上之第2活性光而發揮作為聚合起始劑之功能之化合物。藉此，感光性樹脂組合物可具有對第1活性光與第2活性光之感光性，可用於雙波長曝光。因此，作為本實施形態中使用之(C)光聚合起始劑，於第1活性光與第2活性光之波長範圍內具有複數個吸收極大之化合物較為有利。更具體而言，(C)光聚合起始劑包含蒽及/或蒽衍生物。至少使用蒽及/或蒽衍生物作為(C)光聚合起始劑就使本實施形態之感光性樹脂組合物成為適合於雙波長曝光之組成之方面而言較為有利。 感光性樹脂組合物中之(C)光聚合起始劑之總含量較佳為0.01～20質量%，更佳為0.05質量%～10質量%，進而較佳為0.1質量%～7質量%，尤佳為0.1質量%～6質量%之範圍內。(C)光聚合起始劑之總含量就獲得充分之感度之觀點而言，較佳為0.01質量%以上，就使光充分地透過至光阻底面而獲得良好之高解像性之觀點而言，較佳為20質量%以下。 就提高感度及密接性之觀點而言，感光性樹脂組合物包含蒽及/或蒽衍生物作為(C)光聚合起始劑。 就獲得良好之密接性及解像度之觀點而言，蒽衍生物較佳為於9位或10位之至少一者具有可具有取代基之碳數1～40之烷氧基，進而較佳為於9位或10位之至少一者具有可具有取代基之碳數1～30之烷氧基。就獲得良好之密接性及解像度之觀點而言，較佳為於9、10位具有可具有取代基之碳數1～40之烷氧基，進而較佳為於9、10位具有可具有取代基之碳數1～30之烷氧基。9位與10位之基之碳數可相同亦可不同。 作為可具有取代基之烷氧基，可列舉： 甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、第三丁氧基、2-甲基丙氧基、1-甲基丙氧基、正戊氧基、異戊氧基、正己氧基、2-乙基己氧基、壬氧基、癸氧基、十一烷氧基、十二烷氧基、十四烷氧基、十六烷氧基、二十烷氧基、環己氧基、降&#158665;基氧基、三環癸氧基、四環十二烷氧基、金剛烷氧基、甲基金剛烷氧基、乙基金剛烷氧基、及丁基金剛烷氧基； 經鹵素修飾之烷氧基、例如氯丁氧基、氯丙氧基； 加成有羥基之烷氧基、例如羥基丁氧基； 加成有氰基之烷氧基、例如氰基丁氧基； 加成有環氧烷基之烷氧基、例如甲氧基丁氧基； 加成有芳基之烷氧基、例如苯氧基丁氧基； 等。該等中，更佳為正丁氧基。 就獲得良好之密接性及解像度之觀點而言，蒽衍生物較佳為於9位或10位之至少一者具有可具有取代基之碳數6～40之芳基，更佳為於9位或10位之至少一者具有可具有取代基之碳數6～30之芳基。 就獲得良好之密接性及解像度之觀點而言，較佳為於9、10位具有可具有取代基之碳數6～40之芳基，更佳為於9、10位具有可具有取代基之碳數6～30之芳基。9位與10位之基之碳數可相同亦可不同。又，9位與10位之基可為相同之基，亦可為不同之基。例如，9位之基為可具有取代基之碳數1～40之烷氧基，10位之基亦可為可具有取代基之碳數6～40之芳基。 作為可具有取代基之碳數6～40之芳基，可列舉：苯基、聯苯基、萘基、蒽基；加成有烷氧基之芳基、例如甲氧基苯基、乙氧基苯基；加成有烷基之芳基、例如甲苯基、二甲苯基、2,4,6-三甲苯基、壬基苯基；加成有鹵素之芳基、例如氯苯基；加成有羥基之芳基、例如羥基苯基等。該等中，更佳為苯基。 蒽衍生物較佳為由下述通式(IV)表示。 [化4]R1 獨立地表示氫原子、碳數1～40之經取代或未經取代之烷基、碳數3～20之經取代或未經取代之脂環族基、碳數2～4之烯基、經取代或未經取代之芳基、經取代或未經取代之雜芳基或N(R')2 基，2個以上之R1 亦可相互鍵結而形成環狀結構，該環狀結構亦可包含雜原子。 X獨立地表示單鍵、氧原子、硫原子、羰基、磺醯基、-N(R')-基、-CO-O-基、-CO-S-基、-SO2 -O-基、-SO2 -S-基、-SO2 -N(R')-基、-O-CO-基、-S-CO-基、-O-SO2 -基或S-SO2 -基。其中，X為單鍵且R1 為氫原子之組合(即未經取代之蒽)除外。 上述R'表示氫原子、碳數1～40之經取代或未經取代之烷基、碳數3～20之經取代或未經取代之脂環族基、碳數2～4之烯基、碳數6～40之經取代或未經取代之芳基或經取代或未經取代之雜芳基，R'彼此亦可相互鍵結而形成環狀結構，該環狀結構亦可包含雜原子。 p為1～10之整數，較佳為2～4。 作為上述R1 及R'中之碳數1～40之經取代或未經取代之烷基，具體而言可列舉：甲基、乙基、正丙基、正丁基、正戊基、正己基、正庚基、正辛基、正壬基、正癸基、正十一烷基、正十二烷基、正十四烷基、正十六烷基、正二十烷基、異丙基、異丁基、第二丁基及第三丁基等。 作為上述R1 及R'中之碳數3～20之經取代或未經取代之脂環族基之具體例，可列舉：環丙基、環丁基、環戊基、環己基、及碳數6～20之有橋脂環式烴基(例如降&#158665;基、三環癸基、四環十二烷基、金剛烷基、甲基金剛烷基、乙基金剛烷基、及丁基金剛烷基等)等。 作為上述R1 及R'中之碳數2～4之烯基之具體例，可列舉乙烯基及丙烯基等。 作為上述R1 及R'中之碳數6～40之經取代或未經取代之芳基之具體例，可列舉：苯基、聯苯基、萘基、蒽基、甲氧基苯基、乙氧基苯基、甲苯基、二甲苯基、2,4,6-三甲苯基、壬基苯基、氯苯基、羥基苯基。 作為上述R1 及R'中之經取代或未經取代之雜芳基，可列舉：於經取代或未經取代之芳基中包含1個以上硫原子、氧原子、氮原子等雜原子之基、例如吡啶基、咪唑基、嗎啉基、哌啶基、吡咯啶基等。 又，上述R1 及R'之各烴基亦可被取代基取代。作為此種取代基，可列舉：羥基、羧基、碳數1～4之羥基烷基(例如羥基甲基、1-羥基乙基、2-羥基乙基、1-羥基丙基、2-羥基丙基、3-羥基丙基、1-羥基丁基、2-羥基丁基、3-羥基丁基、4-羥基丁基等)、碳數1～4之烷氧基(例如甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、2-甲基丙氧基、1-甲基丙氧基、第三丁氧基等)、氰基、碳數2～5之氰基烷基(例如氰基甲基、2-氰基乙基、3-氰基丙基、4-氰基丁基等)、烷氧基羰基(例如甲氧基羰基、乙氧基羰基、第三丁氧基羰基等)、烷氧基羰基烷氧基(例如甲氧基羰基甲氧基、乙氧基羰基甲氧基、第三丁氧基羰基甲氧基等)、鹵素原子(例如氟、氯、溴等)及氟烷基(例如氟甲基、三氟甲基、五氟乙基等)等。上述R1 及R'之各烴基較佳為被鹵素原子取代。尤其，蒽衍生物較佳為於9位及/或10位具有被鹵素原子取代之烷氧基。 作為上述R1 及R'之較佳具體例，可列舉：氫原子、甲基、乙基、正丙基、異丙基、正丁基、第三丁基、正戊基、正己基、正庚基、正辛基、環戊基、環己基、樟腦醯基、降&#158665;基、對甲苯甲醯基、苄基、甲基苄基、苯基及1-萘基。 作為上述X之較佳具體例，可列舉：單鍵、氧原子、硫原子、-N(R')-基、-O-CO-基、及O-SO2 -基。此處，於上述X為-N(R')-基之情形時，上述R'較佳為氫原子、甲基、乙基、正丙基、異丙基、正丁基、環戊基、環己基、樟腦醯基、降&#158665;基或苄基。 作為上述通式(IV)所表示之化合物之例，例如可列舉：1-甲基蒽、2-甲基蒽、2-乙基蒽、2-第三丁基蒽、9-甲基蒽、9,10-二甲基蒽、9-乙烯基蒽、9-苯基蒽、9,10-二苯基蒽、2-溴-9,10-二苯基蒽、9-(4-溴苯基)-10-苯基蒽、9-(1-萘基)蒽、9-(2-萘基)蒽、2-溴-9,10-雙(2-萘基)蒽、2,6-二溴-9,10-雙(2-萘基)蒽、9,10-二乙氧基蒽、9,10-二丙氧基蒽、9,10-二丁氧基蒽、9,10-二(2-乙基己氧基)蒽、1,2-苯并蒽、1,2,10-三羥基蒽、1,4,9,10-四羥基蒽、9-蒽甲醇、1-胺基蒽、2-胺基蒽、9-(甲基胺基甲基)蒽、9-乙醯基蒽、9-蒽醛、10-甲基-9-蒽醛、1,8,9-三乙醯氧基蒽等。該等中，較佳為9,10-二甲基蒽、9,10-二苯基蒽、9,10-二乙氧基蒽、9,10-二丙氧基蒽、9,10-二丁氧基蒽、9,10-二(2-乙基己氧基)蒽、9,10-雙-(3-氯丙氧基)蒽，尤其，就感度、密接性、解像度之觀點而言，更佳為9,10-二乙氧基蒽、9,10-二丁氧基蒽及9,10-二苯基蒽、9,10-雙-(3-氯丙氧基)蒽，尤佳為9,10-二丁氧基蒽及9,10-二苯基蒽。9,10-二丁氧基蒽就密接性及解像度之方面而言尤其有利。上述通式(IV)所表示之化合物可單獨使用，亦可將2種以上組合而使用。 上述通式(IV)所表示之化合物對於用於使用以未達390 nm為中心波長之第1活性光與以390 nm以上之波長為中心波長之第2活性光之雙波長曝光而提供一種顯示優異之感度、密接性及解像度之感光性樹脂組合物尤其有用。 於一態樣中，(C)光聚合起始劑較佳為包含具有鹵素原子之蒽衍生物。具有鹵素原子之蒽衍生物之較佳例為9,10-二烷氧基蒽之鹵素取代物。該鹵素取代物之較佳例為9,10-二烷氧基蒽之9位及/或10位之烷氧基經1個以上之鹵素修飾之化合物。作為較佳之烷氧基，可列舉上述作為碳數1～40之烷氧基所例示者。 於一態樣中，作為蒽衍生物，具有直接鍵結於蒽骨架之鹵素原子之化合物亦較佳。作為此種蒽化合物，可列舉：9-溴-10-苯基蒽、9-氯-10-苯基蒽、9-溴-10-(2-萘基)蒽、9-溴-10-(1-萘基)蒽、9-(2-聯苯基)-10-溴蒽、9-(4-聯苯基)-10-溴蒽、9-溴-10-(9-菲基)蒽、2-溴蒽、9-溴蒽、2-氯蒽、9,10-二溴蒽。 蒽及蒽衍生物之合計量、或於較佳之態樣中上述通式(IV)所表示之化合物之量相對於感光性樹脂組合物之固形物成分總量較佳為0.05～5質量%，更佳為0.1～3質量%，尤佳為0.1～1.0質量%之範圍。 (C)光聚合起始劑亦可進而包含蒽及蒽衍生物以外之化合物，作為此種化合物，可列舉：醌類、芳香族酮類、苯乙酮類、醯基氧化膦類、苯偶姻或苯偶姻醚類、二烷基縮酮類、9-氧硫&#134079;類、二烷基胺基苯甲酸酯類、肟酯類、吖啶類(例如9-苯基吖啶、雙吖啶基庚烷、9-(對甲基苯基)吖啶、9-(間甲基苯基)吖啶就感度、解像性、及密接性之方面而言較佳)、六芳基聯咪唑、吡唑啉化合物、香豆素化合物(例如7-二乙胺基-4-甲基香豆素就感度、解像性、及密接性之方面而言較佳)、N-芳基胺基酸或其酯化合物(例如N-苯基甘胺酸就感度、解像性、及密接性之方面而言較佳)、及鹵素化合物(例如三溴甲基苯基碸)等。該等可單獨使用1種或將2種以上組合而使用。此外，亦可使用2,2-二甲氧基-1,2-二苯基乙烷-1-酮、2-甲基-1-(4-甲基硫代苯基)-2-嗎啉基丙烷-1-酮、2,4,6-三甲基苯甲醯基-二苯基-氧化膦、三苯基氧化膦等。 作為芳香族酮類，例如可列舉：二苯甲酮、米其勒酮[4,4'-雙(二甲胺基)二苯甲酮]、4,4'-雙(二乙胺基)二苯甲酮、4-甲氧基-4'-二甲胺基二苯甲酮。該等可單獨使用1種或將2種以上組合而使用。該等中，就密接性之觀點而言，較佳為4,4'-雙(二乙胺基)二苯甲酮。進而，就透過率之觀點而言，感光性樹脂組合物中之芳香族酮類之含量較佳為0.01質量%～0.5質量%，進而較佳為0.02質量%～0.3質量%之範圍內。 作為六芳基聯咪唑之例，可列舉：2-(鄰氯苯基)-4,5-二苯基聯咪唑、2,2',5-三-(鄰氯苯基)-4-(3,4-二甲氧基苯基)-4',5'-二苯基聯咪唑、2,4-雙-(鄰氯苯基)-5-(3,4-二甲氧基苯基)-二苯基聯咪唑、2,4,5-三-(鄰氯苯基)-二苯基聯咪唑、2-(鄰氯苯基)-雙-4,5-(3,4-二甲氧基苯基)-聯咪唑、2,2'-雙-(2-氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,3-二氟甲基苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,4-二氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,5-二氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,6-二氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,3,4-三氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,3,5-三氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,3,6-三氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,4,5-三氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,4,6-三氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,3,4,5-四氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,3,4,6-四氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、及2,2'-雙-(2,3,4,5,6-五氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑等；該等可單獨使用1種或將2種以上組合而使用。就感度、解像性及密接性之觀點而言，較佳為2-(鄰氯苯基)-4,5-二苯基咪唑二聚物。 就提高感光性樹脂層之剝離特性及/或感度之觀點而言，感光性樹脂組合物中之六芳基聯咪唑化合物之含量較佳為0.05質量%～8質量%，更佳為0.1質量%～7質量%，進而較佳為1質量%～6質量%之範圍內。 就感光性樹脂層之剝離特性、感度、解像性、及密接性之觀點而言，感光性樹脂組合物較佳為包含1種或2種以上之吡唑啉化合物作為(C)光聚合起始劑。 作為吡唑啉化合物，就上述觀點而言，較佳為例如1-苯基-3-(4-第三丁基-苯乙烯基)-5-(4-第三丁基-苯基)-吡唑啉、1-(4-(苯并㗁唑-2-基)苯基)-3-(4-第三丁基-苯乙烯基)-5-(4-第三丁基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-第三丁基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-第三辛基-苯基)-吡唑啉、1-苯基-3-(4-異丙基苯乙烯基)-5-(4-異丙基苯基)-吡唑啉、1-苯基-3-(4-甲氧基苯乙烯基)-5-(4-甲氧基苯基)-吡唑啉、1-苯基-3-(3,5-二甲氧基苯乙烯基)-5-(3,5-二甲氧基苯基)-吡唑啉、1-苯基-3-(3,4-二甲氧基苯乙烯基)-5-(3,4-二甲氧基苯基)-吡唑啉、1-苯基-3-(2,6-二甲氧基苯乙烯基)-5-(2,6-二甲氧基苯基)-吡唑啉、1-苯基-3-(2,5-二甲氧基苯乙烯基)-5-(2,5-二甲氧基苯基)-吡唑啉、1-苯基-3-(2,3-二甲氧基苯乙烯基)-5-(2,3-二甲氧基苯基)-吡唑啉、1-苯基-3-(2,4-二甲氧基苯乙烯基)-5-(2,4-二甲氧基苯基)-吡唑啉等，更佳為1-苯基-3-(4-聯苯基)-5-(4-第三丁基-苯基)-吡唑啉。 (D)添加劑 感光性樹脂組合物視需要可包含染料、塑化劑、抗氧化劑、穩定化劑等添加劑。例如可使用日本專利特開2013-156369號公報中所列舉之添加劑。 就著色性、色相穩定性及曝光對比度之觀點而言，感光性樹脂組合物較佳為包含三(4-二甲胺基苯基)甲烷[隱色結晶紫]及/或鑽石綠(保土谷化學股份有限公司製造 Aizen(註冊商標) DIAMOND GREEN GH)作為染料。 感光性樹脂組合物中之染料之含量較佳為0.001質量%～3質量%，更佳為0.01質量%～2質量%，進而較佳為0.02質量%～1質量%之範圍內。染料之含量就獲得良好之著色性之觀點而言，較佳為0.001質量%以上，就維持感光性樹脂層之感度之觀點而言，較佳為3質量%以下。 就感光性樹脂組合物之熱穩定性及保存穩定性之觀點而言，感光性樹脂組合物較佳為包含選自由 自由基聚合抑制劑、例如亞硝基苯基羥基胺鋁鹽、對甲氧基苯酚、4-第三丁基兒茶酚、4-乙基-6-第三丁基苯酚等； 苯并三唑類、例如1-(N,N-雙(2-乙基己基)胺基甲基)-1,2,3-苯并三唑、2,2'-(((甲基-1H-苯并三唑-1-基)甲基)亞胺基)雙乙醇、1-(2-二正丁基胺基甲基)-5-羧基苯并三唑與1-(2-二正丁基胺基甲基)-6-羧基苯并三唑之1：1混合物等； 羧基苯并三唑類、例如4-羧基-1,2,3-苯并三唑、5-羧基-1,2,3-苯并三唑、6-羧基-1,2,3-苯并三唑等；及 具有縮水甘油基之化合物、例如雙酚A二縮水甘油醚、氫化雙酚A二縮水甘油醚、新戊二醇二縮水甘油醚等； 所組成之群中之至少一者作為穩定化劑。 此外，亦可包含2-巰基苯并咪唑、1H-四唑、1-甲基-5-巰基-1H-四唑、2-胺基-5-巰基-1,3,4-噻二唑、3-胺基-5-巰基-1,2,4-三唑、3-巰基-1,2,4-三唑、3-巰基三唑、4,5-二苯基-1,3-二唑-2-基、5-胺基-1H-四唑等。 感光性樹脂組合物中之全部穩定化劑之總含量較佳為0.001質量%～3質量%，更佳為0.01質量%～1質量%，進而較佳為0.05質量%～0.7質量%之範圍內。穩定化劑之總含量就對感光性樹脂組合物賦予良好之保存穩定性之觀點而言，較佳為0.001質量%以上，就維持感光性樹脂層之感度之觀點而言，較佳為3質量%以下。 上述所說明之添加劑可單獨使用1種或將2種以上組合而使用。 ＜感光性樹脂組合物調合液＞ 於本實施形態中，可藉由向感光性樹脂組合物中添加溶劑而形成感光性樹脂組合物調合液。作為較佳之溶劑，可列舉：酮類、例如甲基乙基酮(MEK)、丙酮等；及醇類、例如甲醇、乙醇、異丙醇等。較佳為以感光性樹脂組合物調合液之黏度於25℃下成為500 mPa・秒～4000 mPa・秒之方式對感光性樹脂組合物添加溶劑。 ＜感光性樹脂積層體＞ 於本實施形態中，可提供一種感光性樹脂積層體，其具有支持體、及積層於支持體上之包含上述感光性樹脂組合物之感光性樹脂層。感光性樹脂積層體視需要亦可於感光性樹脂層之支持體側之相反側具有保護層。 作為支持體，並無特別限定，較佳為使自曝光光源放射之光透過的透明支持體。作為此種支持體，例如可列舉：聚對苯二甲酸乙二酯膜、聚乙烯醇膜、聚氯乙烯膜、氯乙烯共聚物膜、聚偏二氯乙烯膜、偏二氯乙烯共聚物膜、聚甲基丙烯酸甲酯共聚物膜、聚苯乙烯膜、聚丙烯腈膜、苯乙烯共聚物膜、聚醯胺膜、及纖維素衍生物膜。對於該等膜，視需要亦可進行延伸。霧度較佳為0.01%～5.0%，更佳為0.01%～2.5%，進而較佳為0.01%～1.0%。關於膜之厚度，雖然膜越薄則於圖像形成性及經濟性之方面越有利，但基於維持強度之需要，較佳為10 μm～30 μm。 又，用於感光性樹脂積層體之保護層之重要特性為：保護層與感光性樹脂層之密接力小於支持體與感光性樹脂層之密接力而可容易地剝離。作為保護層，例如較佳為聚乙烯膜、聚丙烯膜等。例如可使用日本專利特開昭59-202457號公報中所記載之剝離性優異之膜。保護層之膜厚較佳為10 μm～100 μm，更佳為10 μm～50 μm。 於本實施形態中，感光性樹脂積層體中之感光性樹脂層之厚度較佳為5 μm～100 μm，更佳為7 μm～60 μm。感光性樹脂層之厚度越小，則光阻圖案之解像性越高，另一方面，越大，則硬化膜之強度越高，故而可根據用途進行選擇。 作為依序積層支持體、感光性樹脂層、及視需要之保護層而製作感光性樹脂積層體之方法，可使用已知之方法。 例如，製備上述感光性樹脂組合物調合液，繼而使用棒式塗佈機或輥式塗佈機將該調合液塗佈至支持體上並使之乾燥，而於支持體上積層由感光性樹脂組合物調合液所形成之感光性樹脂層。繼而，視需要於感光性樹脂層上積層保護層，藉此可製作感光性樹脂積層體。 ＜光阻圖案製造方法＞ 本實施形態亦提供一種光阻圖案之製造方法。該方法包括：曝光步驟，其係將上述感光性樹脂組合物加以曝光；及顯影步驟，其係將曝光後之感光性樹脂組合物予以顯影。該方法較佳為依序包括：層壓步驟，其係於支持體上積層包含上述感光性樹脂組合物之感光性樹脂層；曝光步驟，其係將感光性樹脂層加以曝光；及顯影步驟，其係將曝光後之感光性樹脂層予以顯影。以下揭示本實施形態中形成光阻圖案之具體方法之一例。 首先，於層壓步驟中使用貼合機於基板上形成感光性樹脂層。具體而言，於感光性樹脂積層體具有保護層之情形時，將保護層剝離後，利用貼合機將感光性樹脂層加熱壓接於基板表面而進行層壓。作為基板之材料，例如可列舉：銅、不鏽鋼(SUS)、玻璃、氧化銦錫(ITO)等。 於本實施形態中，感光性樹脂層可僅層壓於基板表面之單面，或者視需要亦可層壓於兩面。層壓時之加熱溫度通常為40℃～160℃。又，藉由進行2次以上之層壓時之加熱壓接，可提高所獲得之光阻圖案對基板之密接性。於加熱壓接時，可使用具備雙聯輥之二段式貼合機，或者亦可藉由使基板與感光性樹脂層之積層物反覆通過輥數次而進行壓接。 繼而，於曝光步驟中，使用曝光機使感光性樹脂層曝露於活性光下。曝光視需要可在將支持體剝離後進行。於透過光罩進行曝光之情形時，曝光量取決於光源照度及曝光時間，亦可使用光量計進行測定。於曝光步驟中，亦可進行直接成像曝光。於直接成像曝光中，不使用光罩而利用直接繪圖裝置對基板上進行曝光。作為光源，使用波長350 nm～410 nm之半導體雷射或超高壓水銀燈。於利用電腦控制繪圖圖案之情形時，曝光量取決於曝光光源之照度及基板之移動速度。亦可藉由使光罩之圖像透過透鏡進行投影而曝光。於本實施形態中應用直接成像曝光步驟，該步驟係使用以未達390 nm之波長為中心波長之活性光(較佳為雷射光)與以390 nm以上之波長為中心波長之活性光(較佳為雷射光)。 於本實施形態中，亦可藉由在曝光後進行熱處理而促進感光性樹脂之硬化反應。曝光後之熱處理可應用利用烘箱之加熱、利用加熱輥之加熱等已知方法。 其次，於顯影步驟中，使用顯影裝置利用顯影液將曝光後之感光性樹脂層中之未曝光部或曝光部去除。曝光後，於感光性樹脂層上存在支持體之情形時，將其去除。繼而，使用包含鹼性水溶液之顯影液將未曝光部或曝光部顯影去除，歷經水洗步驟、及乾燥步驟而獲得光阻圖像。於上述水洗步驟中，可使用離子交換水、或者添加有鎂離子或鈣離子之水。 作為鹼性水溶液，較佳為Na2 CO3 、K2 CO3 等之水溶液。鹼性水溶液係根據感光性樹脂層之特性而選擇，通常使用0.2質量%～2質量%之濃度之Na2 CO3 水溶液。鹼性水溶液中亦可混合界面活性劑、消泡劑、用以促進顯影之少量有機溶劑等。顯影步驟中之顯影液之溫度較佳為於20℃～40℃之範圍內保持固定。 藉由上述步驟而獲得光阻圖案，視需要亦可進而於100℃～300℃下進行加熱步驟。藉由實施該加熱步驟，可提高光阻圖案之耐化學品性。於加熱步驟時可使用利用熱風、紅外線、或遠紅外線之方式之加熱爐。 ＜電路基板之製造方法＞ 本實施形態之感光性樹脂組合物可較佳地用以形成印刷基板之電路。本實施形態提供一種電路基板之製造方法，其係藉由對具有藉由上述光阻圖案之製造方法所製造之光阻圖案的基板實施蝕刻或鍍覆而形成電路基板。 通常，作為印刷基板之電路形成方法，使用減成法及半加成法(SAP)。減成法係如下方法：藉由蝕刻自配置於基板整個面之導體僅將非電路部分去除而形成電路。SAP係如下方法：於配置於基板整個面之導體晶種層上之非電路部分形成光阻後，藉由鍍覆僅形成電路部分。 於本實施形態中，感光性樹脂組合物更佳為用於SAP。 於本實施形態中，為了改善光阻圖案之柔軟性，感光性樹脂組合物之硬化物之伸長率相對於伸長方向長度40 mm較佳為1 mm以上，更佳為2 mm以上，進而較佳為3 mm以上。 硬化物之伸長率係藉由如下方式進行測定：透過5 mm×40 mm之長方形光罩將使用感光性樹脂組合物所製作之感光性樹脂積層體加以曝光，進而以最小顯影時間之2倍之時間予以顯影，利用拉伸試驗機(Orientec(股份)公司製造，RTM-500)以100 mm/min之速度將所獲得之硬化光阻進行拉伸。 於本實施形態中，就光阻圖案之解像性及柔軟性之觀點而言，感光性樹脂組合物之硬化物之楊氏模數較佳為1.5 GPa以上且未達8 GPa之範圍內。於本說明書中，「楊氏模數」可使用例如TOYO TECHNICA股份有限公司製造之奈米壓痕儀DCM並藉由奈米壓痕法進行測定。具體而言，「楊氏模數」係使用TOYO TECHNICA股份有限公司製造之奈米壓痕儀DCM對將測定對象樹脂組合物層壓於基板上並進行曝光、顯影而獲得之基板上之感光性樹脂組合物表面進行測定。作為測定方式，使用DCM Basic Hardness, Modulus, Tip Cal, Load Control. msm(多重加載-卸載方式，MultiLoad Method)，壓入試驗之參數係設為卸載百分比(Percent To Unload)＝90%、最大負載(Maximum Load)＝1 gf、負載率乘以卸載率(Load Rate Multiple For Unload Rate)＝1、加載次數(Number Of Times to Load)＝5、最大保持時間(Peak Hold time)＝10 s、加載時間(Time To Load)＝15 s、泊松比(Poisson's ratio)＝0.25。楊氏模數係設為「最大負載下之模數(Modulas At Max Load)」之值。 ＜導體圖案之製造方法＞ 導體圖案之製造方法較佳為依序包括：層壓步驟，其係於金屬板、金屬皮膜絕緣板等基板上積層包含上述感光性樹脂組合物之感光性樹脂層；曝光步驟，其係將感光性樹脂層加以曝光；顯影步驟，其係藉由利用顯影液將曝光後之感光性樹脂層之未曝光部或曝光部去除而獲得形成有光阻圖案之基板；及導體圖案形成步驟，其係對形成有光阻圖案之基板進行蝕刻或鍍覆。 於本實施形態中，導體圖案之製造方法係藉由如下方式進行：使用金屬板或金屬皮膜絕緣板作為基板，藉由上述光阻圖案製造方法而形成光阻圖案後，歷經導體圖案形成步驟。於導體圖案形成步驟中，利用已知之蝕刻法或鍍覆法於藉由顯影而露出之基板表面(例如銅面)形成導體圖案。 進而，本發明例如於以下用途中較佳地應用。 ＜配線板之製造方法＞ 藉由導體圖案之製造方法而製造導體圖案後，進而進行利用具有強於顯影液之鹼性之水溶液將光阻圖案自基板剝離之剝離步驟，藉此可獲得具有所需之配線圖案之配線板(例如印刷配線板)。 於配線板之製造中，使用絕緣樹脂層與銅層之積層體、或軟性基板作為基板。為了進行SAP，較佳為使用絕緣樹脂層與銅層之積層體。對於SAP，銅層較佳為包含鈀作為觸媒之無電解鍍銅層。對於SAP，藉由已知之鍍覆法進行導體圖案形成步驟亦較佳。為了進行改良型半加成法(MSAP)，基板較佳為絕緣樹脂層與銅箔之積層體，更佳為銅箔積層板。 關於剝離用鹼性水溶液(以下亦稱作「剝離液」)，並無特別限制，通常使用2質量%～5質量%之濃度之NaOH或KOH之水溶液、或有機胺系剝離液。可向剝離液中添加少量水溶性溶劑。作為水溶性溶劑，例如可列舉醇等。剝離步驟中之剝離液之溫度較佳為40℃～70℃之範圍內。 為了進行SAP，配線板之製造方法較佳為進而包括自所獲得之配線板將鈀去除之步驟。 ＜引線框架之製造＞ 使用銅、銅合金、或鐵系合金等之金屬板作為基板，藉由光阻圖案製造方法形成光阻圖案後，歷經以下步驟，藉此可製造引線框架。首先，進行對藉由顯影而露出之基板進行蝕刻而形成導體圖案之步驟。其後，藉由與配線板之製造方法相同之方法進行將光阻圖案剝離之剝離步驟，而可獲得所需之引線框架。 ＜具有凹凸圖案之基材之製造＞ 藉由光阻圖案製造方法所形成之光阻圖案可用作藉由噴砂工法對基板實施加工時之保護光罩構件。於該情形時，作為基板，例如可列舉：玻璃、矽晶圓、非晶矽、多晶矽、陶瓷、藍寶石、金屬材料等。藉由與光阻圖案製造方法相同之方法於該等基板上形成光阻圖案。其後，進行自所形成之光阻圖案上方吹送噴砂材而切削至目標深度之噴砂處理步驟、及利用鹼性剝離液等將基板上殘留之光阻圖案部分自基板去除之剝離步驟，而可製造於基板上具有微細之凹凸圖案之基材。 於噴砂處理步驟中，可使用公知之噴砂材，例如通常使用包含SiC、SiO2 、Al2 O3 、CaCO3 、ZrO、玻璃、不鏽鋼等之粒徑2 μm～100 μm之微粒子。 ＜半導體封裝體之製造＞ 使用大規模積體化電路(LSI)之形成已結束之晶圓作為基板，藉由光阻圖案製造方法於晶圓上形成光阻圖案後，歷經以下步驟，藉此可製造半導體封裝體。首先，進行對藉由顯影而露出之開口部實施銅、焊料等之柱狀鍍覆而形成導體圖案之步驟。其後，藉由與配線板之製造方法相同之方法進行將光阻圖案剝離之剝離步驟，繼而，進行藉由蝕刻將柱狀鍍覆以外之部分之較薄之金屬層去除之步驟，藉此可獲得所需之半導體封裝體。 於本實施形態中，感光性樹脂組合物可用於：印刷配線板之製造；IC(Integrated Circuit，積體電路)晶片搭載用引線框架製造；金屬光罩製造等金屬箔精密加工；球柵陣列(BGA)、晶片尺寸封裝體(CSP)等封裝體之製造；薄膜覆晶(COF)、捲帶式自動接合(TAB)等之捲帶基板之製造；半導體凸塊之製造；及ITO電極、定址電極、電磁波屏蔽等平板顯示器之間隔壁之製造。 再者，本實施形態之感光性樹脂組合物主要意在藉由具有對第1活性光及第2活性光之感光性而用於雙波長曝光，但亦可進而具有對與第1活性光及第2活性光不同之1種以上之活性光之感光性。於該情形時，於上述各種用途中可對本實施形態之感光性樹脂組合物應用例如三波長曝光等。 再者，對於上述各參數之值，只要未特別說明，則依照下述實施例中之測定方法進行測定。 [實施例] 對高分子之物性值之測定、以及實施例、比較例及參考例之評價用樣品之製作方法進行說明，其次，揭示針對所獲得之樣品之評價方法及其評價結果。 (1)物性值之測定或計算＜高分子之重量平均分子量或數量平均分子量之測定＞高分子之重量平均分子量或數量平均分子量係利用日本分光(股份)製造之凝膠滲透層析儀(GPC)(使用利用泵：Gulliver、PU-1580型，管柱：昭和電工(股份)製造之Shodex(註冊商標)(KF-807、KF-806M、KF-806M、KF-802.5)4根串聯，流動相溶劑：四氫呋喃、聚苯乙烯標準樣品(昭和電工(股份)製造之Shodex STANDARD SM-105)獲得之校準曲線)而以聚苯乙烯換算之形式求出。進而，高分子之分子量之分散度係以重量平均分子量相對於數量平均分子量之比(重量平均分子量/數量平均分子量)之形式算出。 ＜酸當量＞ 於本揭示中，所謂酸當量，意指分子中具有1當量之羧基之聚合物之質量(克)。使用平沼產業(股份)製造之平沼自動滴定裝置(COM-555)，且使用0.1 mol/L之氫氧化鈉水溶液藉由電位差滴定法而測定酸當量。 (2)評價用樣品之製作方法 評價用樣品係藉由如下方式製作。 ＜感光性樹脂積層體之製作＞ 將下述表1～3中所示之成分(其中，各成分之數字表示以固形物成分計之調配量(質量份))及溶劑充分地攪拌、混合，而獲得感光性樹脂組合物調合液。將表1～3中以簡稱表示之成分名稱示於表4～6。使用厚度為16 μm之聚對苯二甲酸乙二酯膜(Toray(股份)製造，FB-40)作為支持膜，使用棒式塗佈機於其表面均勻地塗佈該調合液，並於95℃之乾燥機中乾燥2.5分鐘，而形成感光性樹脂組合物層。感光性樹脂組合物層之乾燥厚度為25 μm。 繼而，於感光性樹脂組合物層之未積層聚對苯二甲酸乙二酯膜之側之表面上貼合厚度為19 μm之聚乙烯膜(TAMAPOLY(股份)製造，GF-818)作為保護層，而獲得感光性樹脂積層體。 ＜基板整面＞ 作為感度、圖像性、密接性及耐藥液性之評價基板，使用研削材(Japan Carlit(股份)製造，Sakurundum R(註冊商標#220))以噴射壓力0.2 MPa對積層有35 μm壓延銅箔之厚度為0.4 mm之銅箔積層板進行噴射洗刷研磨，藉此製作評價用基板。 ＜層壓＞ 一面將感光性樹脂積層體之聚乙烯膜剝離，一面利用加熱輥貼合機(旭化成(股份)公司製造，AL-700)以輥溫度105℃將感光性樹脂積層體層壓於已整面並預熱至60℃之銅箔積層板而獲得試驗片。氣壓係設為0.35 MPa，層壓速度係設為1.5 m/分鐘。 ＜曝光＞ 於實施例1～實施例23、比較例1中，利用直接繪圖曝光機(光源：375 nm(30%)＋405 nm(70%))並使用Stouffer41級階段式曝光表進行曝光。曝光係以將上述Stouffer41級階段式曝光表作為光罩而進行曝光、顯影時之最高殘膜級數成為19級之曝光量進行。 於參考例1、參考例3中，利用直接繪圖曝光機(光源：355 nm)並使用Stouffer41級階段式曝光表進行曝光。曝光係以將上述Stouffer41級階段式曝光表作為光罩而進行曝光、顯影時之最高殘膜級數成為19級之曝光量進行。 於參考例2、參考例4中，利用直接繪圖曝光機(光源：405 nm)並使用Stouffer41級階段式曝光表進行曝光。曝光係以將上述Stouffer41級階段式曝光表作為光罩而進行曝光、顯影時之最高殘膜級數成為19級之曝光量進行。 於參考例5、參考例6中，利用平行光曝光機(光源：超高壓水銀燈)並使用Stouffer41級階段式曝光表、及玻璃鉻光罩進行曝光。曝光係以將上述Stouffer41級階段式曝光表作為光罩而進行曝光、顯影時之最高殘膜級數成為19級之曝光量進行。 ＜顯影＞ 自感光性樹脂積層體將聚對苯二甲酸乙二酯膜剝離後，使用FUJIKIKO(股份)製造之顯影裝置，利用全錐型噴嘴以顯影噴射壓力0.15 MPa歷時特定時間噴射30℃之1質量%Na2 CO3 水溶液而予以顯影，將感光性樹脂層之未曝光部分溶解去除。此時，將未曝光部分之感光性樹脂層完全溶解所需之最短時間設為最短顯影時間而進行測定，以最小顯影時間之3倍之時間予以顯影而製作光阻圖案。此時，水洗步驟係利用扁平型噴嘴以水洗噴射壓力0.15 MPa以顯影步驟之5倍之時間進行處理。 (3)樣品之評價方法 ＜感度評價＞ 於上述曝光步驟中，透過Stouffer41級階段式曝光表之光罩進行曝光後，予以顯影，根據最高殘膜級數成為19級之曝光量而按照以下基準進行分級。 A(良好)：最高殘膜級數成為19級之曝光量為60 mJ/cm2 以下。 B(可)：最高殘膜級數成為19級之曝光量超過60 mJ/cm2 且為70 mJ/cm2 以下。 C(不良)：最高殘膜級數成為19級之曝光量超過70 mJ/cm2 。 ＜解像性＞ 於上述曝光步驟中，使用具有曝光部與未曝光部之寬度為1：1之比率之線圖案之繪圖資料進行曝光。依照上述顯影條件予以顯影，形成硬化光阻線。 將正常形成有硬化光阻線之最小線寬作為解像度之值而按照以下基準進行分級。 AA(極良好)：解像度之值為18 μm以下。 A(良好)：解像度之值超過18 μm且未達22 μm。 C(不良)：解像度之值為22 μm以上。 ＜密接性＞ 於上述曝光步驟中，使用具有曝光部與未曝光部之寬度為1：200之比率之線圖案之繪圖資料進行曝光。依照上述顯影條件予以顯影，將正常形成有硬化光阻線之最小線寬作為密接性之值而按照以下基準進行分級。 AA(極良好)：密接性之值為11 μm以下。 A(良好)：密接性之值超過11 μm且為13 μm以下。 B(可)：密接性之值超過13 μm且為15 μm以下。 C(不良)：密接性之值超過15 μm。 [表1] [表2] [表3] [表4] [表5] [表6] [產業上之可利用性] 本發明之感光性樹脂組合物可較佳地應用於例如藉由減成法及半加成法(SAP)等進行之電路形成。Hereinafter, embodiments for implementing the present invention (hereinafter referred to simply as "this embodiment") will be specifically described, but the present invention is not limited to these embodiments. <Photosensitive resin composition> In this embodiment, the photosensitive resin composition contains (A) an alkali-soluble polymer, (B) a compound having an ethylenic double bond (that is, an ethylenically unsaturated bond), and (C) Photopolymerization initiator. (C) The photopolymerization initiator contains anthracene and / or anthracene derivative. The photosensitive resin composition may further contain other components, such as an (D) additive, as needed. In addition, in this embodiment, the photosensitive resin composition can be applied to an arbitrary support to form a photosensitive resin layer. The photosensitive resin composition of this embodiment has photosensitivity to both the first active light having a center wavelength of less than 390 nm and the second active light having a center wavelength of 390 nm or more. Therefore, the photosensitive resin composition of this embodiment has a specific composition that is preferable for obtaining a cured resin by exposing the first active light and the second active light. The center wavelength of the first active light is preferably 350 to 380 nm, more preferably 355 to 375 nm, and even more preferably 375 nm. The center wavelength of the second active light is preferably 400 to 410 nm, more preferably 402 to 408 nm, and even more preferably 405 nm (h-ray). Hereinafter, each component contained in a photosensitive resin composition is demonstrated. (A) Alkali-soluble polymer (A) Alkali-soluble polymer is a polymer that is soluble in an alkaline substance. From the viewpoint of alkali developability, the (A) alkali-soluble polymer preferably has a carboxyl group, and more preferably a copolymer containing a carboxyl group-containing monomer as a copolymerization component. (A) The alkali-soluble polymer may be thermoplastic. From the viewpoint of the high resolution of the photoresist pattern and the shape of the foot, the photosensitive resin composition preferably contains a copolymer having an aromatic group as the (A) alkali-soluble polymer. The photosensitive resin composition is particularly preferably a copolymer having an aromatic group in a side chain as (A) an alkali-soluble polymer. Examples of such an aromatic group include a substituted or unsubstituted phenyl group and a substituted or unsubstituted aralkyl group. The proportion of the copolymer having an aromatic group in the component (A) is preferably 30% by mass or more, more preferably 40% by mass or more, more preferably 50% by mass or more, more preferably 70% by mass or more, and furthermore It is preferably 80% by mass or more. The above ratio may be 100% by mass, but from the viewpoint of maintaining good alkali solubility, it is preferably 95% by mass or less, more preferably 90% by mass or less, and still more preferably 85% by mass. From the viewpoint of the high resolution of the photoresist pattern and the shape of the foot, the copolymerization ratio of the copolymerizable monomer having an aromatic group in the (A) alkali-soluble polymer is preferably 40% by mass or more, more preferably It is 50% by mass or more, preferably 60% by mass or more, preferably 70% by mass or more, and more preferably 80% by mass or more. The upper limit of the copolymerization ratio is not particularly limited, but from the viewpoint of maintaining good alkali solubility, it is preferably 95% by mass or less, and more preferably 90% by mass or less. Examples of the above-mentioned copolymerizable monomer having an aromatic group include a monomer having an aralkyl group, styrene, and a polymerizable styrene derivative (for example, methylstyrene, vinyltoluene, and tert-butyl Oxystyrene, ethoxylated styrene, 4-vinylbenzoic acid, styrene dimer, styrene terpolymer, etc.). Among them, a monomer having an aralkyl group and styrene are preferable, and a monomer having an aralkyl group is more preferable. When the comonomer having an aromatic group contains styrene, (A) the copolymerization ratio of styrene in the alkali-soluble polymer in terms of the high resolution of the photoresist pattern and the shape of the foot portion It is preferably 30% by mass or more, and further preferably 50% by mass or more. From the viewpoint of maintaining good alkali solubility, it is preferably 80% by mass or less, more preferably 70% by mass or less, and still more preferably 60% by mass. %the following. Examples of the aralkyl group include substituted or unsubstituted benzyl, substituted or unsubstituted phenylalkyl (except benzyl), and the like, and substituted or unsubstituted benzyl is preferred. Examples of the comonomer having a benzyl group include (meth) acrylates having a benzyl group, such as benzyl (meth) acrylate, chlorobenzyl (meth) acrylate, and the like; vinyl monomers having a benzyl group Such as vinyl benzyl chloride, vinyl benzyl alcohol, and the like. Among these, benzyl (meth) acrylate is preferred. Examples of the comonomer having a phenylalkyl group (except benzyl) include phenylethyl (meth) acrylate and the like. The copolymer having an aromatic group (preferably a benzyl group) in the side chain is preferably made by (i) a monomer having an aromatic group and (ii) at least one of the following first monomers and / or It is obtained by polymerizing at least one of the following second monomers. The (A) alkali-soluble polymer other than the copolymer having an aromatic group in the side chain is preferably obtained by polymerizing at least one of the following first monomers, and more preferably by making the first It is obtained by copolymerizing at least one of the monomers and at least one of the following second monomers. A monomer having a carboxyl group in the first single-system molecule. Examples of the first monomer include (meth) acrylic acid, fumaric acid, cinnamic acid, butenoic acid, itaconic acid, 4-vinylbenzoic acid, maleic anhydride, and maleic acid half esters. Among these, (meth) acrylic acid is preferred. In addition, in the present specification, "(meth) acrylic acid" means acrylic acid or methacrylic acid, and "(meth) acrylfluorenyl" means acrylfluorenyl or methacrylfluorenyl, and, The "(meth) acrylate" means "acrylate" or "methacrylate". The copolymerization ratio of the first monomer is preferably 10 to 50% by mass based on the total mass of all monomer components of the polymer obtained by polymerizing at least one of the first monomers. The copolymerization ratio is preferably 10% by mass or more from the viewpoint of exhibiting good developability and controlling the melting of edges. The copolymerization ratio is preferably 50% by mass or less, more preferably 30% by mass from the viewpoint of the high resolution of the photoresist pattern and the shape of the foot portion, and further from the viewpoint of the chemical resistance of the photoresist pattern. % Or less, more preferably 25% by mass or less, particularly preferably 22% by mass or less, and most preferably 20% by mass or less. The second monosystem is a monomer which is non-acidic and has at least one polymerizable unsaturated group in the molecule. Examples of the second monomer include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, and n- (meth) acrylate Butyl ester, isobutyl (meth) acrylate, third butyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, and (meth) acrylic ring (Meth) acrylates such as hexyl ester, 2-ethylhexyl (meth) acrylate; vinyl alcohol esters such as vinyl acetate; and (meth) acrylonitrile. Among these, methyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and n-butyl (meth) acrylate are preferred. (A) The alkali-soluble polymer can be prepared by polymerizing one or more of the monomers described above by a known polymerization method, preferably addition polymerization, more preferably radical polymerization. The monomer containing a monomer having an aralkyl group and / or styrene is preferable from the viewpoints of chemical resistance, adhesion, high resolution, or foot shape of the photoresist pattern. (A) The alkali-soluble polymer is particularly preferably: a copolymer including methacrylic acid, benzyl methacrylate, and styrene; and a copolymer including methacrylic acid, methyl methacrylate, benzyl methacrylate, and benzene Copolymers of ethylene, etc. From the viewpoint of chemical resistance, adhesion, high resolution, or shape of the foot of the photoresist pattern, the glass transition temperature of the (A) alkali-soluble polymer obtained from the Fox formula (in (A) When the component contains plural kinds of copolymers, it is the glass transition temperature Tg of the whole mixture, that is, the weight average Tg of the glass transition temperature. total ) Is preferably 110 ° C or lower, more preferably 107 ° C or lower, 105 ° C or lower, 100 ° C or lower, 95 ° C or lower, 90 ° C or lower, or 80 ° C or lower. (A) The lower limit of the glass transition temperature (Tg) of the alkali-soluble polymer is not limited. From the standpoint of controlling edge melting, it is preferably 30 ° C or higher, more preferably 50 ° C or higher, and even more preferably Above 60 ° C. (A) The acid equivalent of an alkali-soluble polymer (in the case where the component (A) contains a plurality of copolymers, the acid equivalent of the entire mixture thereof) is the development resistance of the photosensitive resin layer and the solution of the photoresist pattern From the viewpoint of image properties and adhesiveness, it is preferably 100 or more, and from the viewpoint of developability and peelability of the photosensitive resin layer, it is preferably 600 or less. (A) The acid equivalent of the alkali-soluble polymer is more preferably 200 to 500, and still more preferably 250 to 450. The weight average molecular weight of the (A) alkali-soluble polymer (when the component (A) contains a plurality of types of copolymers, the weight average molecular weight of the entire mixture thereof) is preferably 5,000 to 500,000. (A) The weight-average molecular weight of the alkali-soluble polymer is preferably 5,000 or more from the viewpoint of maintaining the thickness of the dry film photoresist to be uniform and the resistance to the developing solution, and maintaining the developability of the dry film photoresist. From a viewpoint, the viewpoint of the high resolution of a photoresist pattern, and the shape of a foot part, and the viewpoint of the chemical resistance of a photoresist pattern, it is preferable that it is 500,000 or less. (A) The weight-average molecular weight of the alkali-soluble polymer is more preferably 10,000 to 200,000, more preferably 20,000 to 100,000, and even more preferably 30,000 to 70,000. (A) The molecular weight dispersion degree of the alkali-soluble polymer is preferably 1.0 to 6.0. The content of the (A) alkali-soluble polymer in the photosensitive resin composition is based on the total amount of solid components of the photosensitive resin composition (hereinafter, unless otherwise specified, it is the same in each of the contained components), and is preferably 10 mass% to 90 mass%, more preferably 20 mass% to 80 mass%, and still more preferably 40 mass% to 60 mass%. (A) The content of the alkali-soluble polymer is preferably 10% by mass or more from the viewpoint of maintaining the alkali developability of the photosensitive resin layer, and the photoresist pattern formed by exposure is fully utilized as a photoresist material. From the viewpoint of performance, the viewpoint of high resolution of the photoresist pattern and the shape of the foot of the photoresist pattern, and the viewpoint of chemical resistance of the photoresist pattern, it is preferably 90% by mass or less, more preferably 80% by mass. % Or less, more preferably 70% by mass or less, and still more preferably 60% by mass or less. (B) The compound having an ethylenically unsaturated bond (B) The compound having an ethylenically unsaturated bond is a compound having polymerizability by having an ethylenically unsaturated group in its structure. From the viewpoint of adhesiveness and the viewpoint of suppressing the foamability of the developer, the compound having an ethylenically unsaturated bond (B) is preferably an alkylene oxide structure having 3 or more carbon atoms. The carbon number of the alkylene oxide structure is more preferably 3 to 6, and even more preferably 3 to 4. From the viewpoints of chemical resistance, adhesion, high resolution, and shape of the foot of the photoresist pattern, the photosensitive resin composition of this embodiment preferably contains (b1) three or more ethylenic resins. The (meth) acrylic acid ester compound having a saturated bond (that is, trifunctional or more) is (B) a compound having an ethylenically unsaturated bond. In terms of adhesion and resolvability, a (meth) acrylic acid ester compound having four or more ethylenically unsaturated bonds (that is, four or more functional groups) is more preferred, and one having six or more Ethylene unsaturated bonds (ie, 6 or more functional) (meth) acrylate compounds. The ethylenically unsaturated bond is more preferably derived from a methacrylfluorenyl group. Examples of (b1) (meth) acrylate compounds having three or more ethylenically unsaturated bonds include tri (meth) acrylates, such as ethoxylated glycerol tri (meth) acrylate, and ethoxylate. Tris (tris (meth) acrylate) isotricyanate, pentaerythritol tris (meth) acrylate, and trimethylolpropane tris (meth) acrylate (e.g., softness, adhesion, and suppression) Preferred examples from the viewpoint of exudation are tris (meth) acrylates obtained by adding an average of 21 moles of ethylene oxide to trimethylolpropane and 30 on average by adding trimethylolpropane. Tris (meth) acrylates, etc. from Moore's ethylene oxide); tetra (meth) acrylates, such as di-trimethylolpropane tetra (meth) acrylate, pentaerythritol tetra (methyl) Acrylate, dipentaerythritol tetra (meth) acrylate, etc .; penta (meth) acrylate, such as dipentaerythritol penta (meth) acrylate, etc .; hexa (meth) acrylate, such as dipentaerythritol hexa (methyl) Acrylate, etc. Among these, tetra, penta, or hexa (meth) acrylate is preferred. From the viewpoint of suppressing bleeding, (b1) the (meth) acrylate compound having three or more ethylenically unsaturated bonds has a weight of preferably 500 or more, more preferably 700 or more, and even more preferably 900 or more Average molecular weight. The tetra (meth) acrylate is preferably pentaerythritol tetra (meth) acrylate. The pentaerythritol tetra (meth) acrylate is preferably a tetra (meth) acrylate having a total of 1 to 40 moles of alkylene oxide added to the four terminals of the pentaerythritol. The tetra (meth) acrylate is more preferably a tetramethacrylate compound represented by the following general formula (I): {Where R 3 ~ R 6 Each independently represents an alkyl group having 1 to 4 carbon atoms, X represents an alkylene group having 2 to 6 carbon atoms, and m 1 , M 2 , M 3 And m 4 Are each independently an integer of 0 to 40, m 1 + M 2 + M 3 + M 4 It is 1 ～ 40 and more than m 1 + M 2 + M 3 + M 4 In the case of 2 or more, a plurality of X may be the same as or different from each other}. Although not wishing to be bound by theory, it is considered that the tetramethacrylate compound represented by the general formula (I) has a group R 3 ~ R 6 While having with H 2 Compared with the tetraacrylate of C = CH-CO-O- part, the hydrolyzability in alkaline solution is suppressed. The use of a photosensitive resin composition containing a tetramethacrylate compound represented by the general formula (I) improves the resolution of a photoresist pattern, more specifically, the shape of a line, more specifically the shape of a line, and light From the viewpoint of the closeness of resistance, it is more preferable. In the general formula (I), a group R is preferred 3 ~ R 6 At least one is methyl, and more preferably R 3 ~ R 6 All are methyl. From the viewpoint of obtaining the required resolution, the shape of the foot portion, and the residual film ratio of the photoresist pattern, in the general formula (I), X is preferably -CH 2 -CH 2 -. From the viewpoint of obtaining a desired resolution, a shape of a foot portion, and a residual film ratio of a photoresist pattern, in general formula (I), 1 , M 2 , M 3 And m 4 Each is independently preferably an integer of 1 to 20, and more preferably an integer of 2 to 10. Furthermore, in the general formula (I), m 1 + M 2 + M 3 + M 4 It is preferably 1 to 36 or 4 to 36. Examples of the compound represented by the general formula (I) include pentaerythritol (poly) alkoxytetramethacrylate and the like. In the present disclosure, "pentaerythritol (poly) alkoxytetramethacrylate" includes m in the general formula (I). 1 + M 2 + M 3 + M 4 = "Pentaerythritol alkoxytetramethacrylate" and m 1 + M 2 + M 3 + M 4 = 2 to 40 of both "pentaerythritol polyalkoxytetramethacrylate". Examples of the compound represented by the general formula (I) include compounds listed in Japanese Patent Laid-Open No. 2013-156369, for example, pentaerythritol (poly) alkoxytetramethacrylate and the like. The hexa (meth) acrylate compound is preferably a hexa (meth) acrylate having a total of 1 to 24 mols of ethylene oxide added to 6 ends of dipentaerythritol, and 6 ends of dipentaerythritol. A hexa (meth) acrylate having a total of 1 to 10 mol of ε-caprolactone is added. From the viewpoints of chemical resistance, adhesion, high resolution, and shape of the foot of the photoresist pattern, the photosensitive resin composition of the present embodiment is particularly preferably one having 4 or more ethylenically unsaturated bonds and The (meth) acrylate compound having an alkylene oxide chain is (B) a compound having an ethylenically unsaturated bond. In this case, the ethylenically unsaturated bond is more preferably derived from a methacrylfluorenyl group, and the alkylene oxide chain is more preferably an ethylene oxide chain. In this embodiment, from the viewpoints of chemical resistance, adhesion, high resolution, and foot shape of the photoresist pattern, the photosensitive resin composition preferably contains an alkylene oxide chain and a dipentaerythritol skeleton. The (meth) acrylate compound is (B) a compound having an ethylenically unsaturated bond. Examples of the alkylene oxide chain include an ethylene oxide chain, a propylene oxide chain, a butylene oxide chain, a pentylene oxide chain, and a hexane oxide chain. When the photosensitive resin composition includes a plurality of types of alkylene oxide chains, they may be the same as or different from each other. From the above viewpoints, as the alkylene oxide chain, an ethylene oxide chain, a propylene oxide chain, and a butylene oxide chain are more preferable, and an ethylene oxide chain and a propylene oxide chain are more preferable. Preferred is an ethylene oxide chain. In the photosensitive resin composition, (A) an alkali-soluble polymer and a (meth) acrylate compound having an alkylene oxide chain and a dipentaerythritol skeleton are used in combination to have chemical resistance to maintain a photoresist pattern, The tendency of balance between closeness and resolution. The (meth) acrylic acid ester compound having an alkylene oxide chain and a dipentaerythritol skeleton is an ester of a dipentaerythritol compound and (meth) acrylic acid in which at least one of a plurality of hydroxyl groups is modified by an alkyleneoxy group. The 6 hydroxyl groups of the dipentaerythritol skeleton can also be modified by using an alkyleneoxy group. The number of ester bonds in one molecule of the ester may be 1 to 6, preferably 6. Examples of the (meth) acrylate compound having an alkylene oxide chain and a dipentaerythritol skeleton include an addition of dipentaerythritol to an average of 4 to 30 moles, an average of 6 to 24 moles, or an average of 10 to 14 moles. Hexa (meth) acrylate of alkylene oxide. Specifically, as a (meth) acrylate compound having an alkylene oxide chain and a dipentaerythritol skeleton, in terms of chemical resistance, adhesion, high resolution, and shape of a photoresist pattern, It is preferably a compound represented by the following general formula (III): {In the formula, R each independently represents a hydrogen atom or a methyl group, n is an integer of 0 to 30, and the total value of all n is 1 or more}. In the general formula (III), the average value of all n is preferably 4 or more, or n is 1 or more, respectively. R is preferably a methyl group. From the viewpoint of chemical resistance of the photoresist pattern, the content of the (meth) acrylate compound having an alkylene oxide chain and a dipentaerythritol skeleton relative to the total amount of solid components in the photosensitive resin composition is preferable It is 1 to 50% by mass, more preferably 5 to 40% by mass, and still more preferably within a range of 7 to 30% by mass. (b1) The content of the (meth) acrylate compound having three or more ethylenically unsaturated bonds is preferably more than 0% by mass and 40% by mass or less with respect to the total amount of the solid content of the photosensitive resin composition. When the content exceeds 0% by mass, the resolution and adhesion tend to be improved, and when it is 40% by mass or less, the flexibility of the cured photoresist is improved and the peeling time tends to be shortened. The content is more preferably 2% by mass or more and 30% by mass or less, and still more preferably 4% by mass or more and 25% by mass or less. From the viewpoint of adhesion and the viewpoint of suppressing the foamability of the developer, the photosensitive resin composition preferably contains (b2) a butylene oxide chain or a propylene oxide chain, and one or two (a) As the (B) compound having an ethylenically unsaturated bond, a compound of acryl) acryl group is used. From the viewpoint of suppressing bleeding, (b2) the compound having a butylene oxide chain or a propylene oxide chain and one or two (meth) acrylfluorenyl groups preferably has 500 or more, more preferably 700 or more And more preferably a molecular weight of 1,000 or more. Examples of the compound (b2) having a butylene oxide chain or a propylene oxide chain and one or two (meth) acrylfluorenyl groups include polypropylene glycol (meth) acrylate and polypropylene glycol di (methyl) ) Acrylate, polytetramethylene glycol (meth) acrylate, polytetramethylene glycol di (meth) acrylate, and the like. (b2) A compound having a butylene oxide chain or a propylene oxide chain and one or two (meth) acrylfluorenyl groups may contain an ethylene oxide chain in addition to the butylene oxide chain or propylene oxide chain . Specifically, (b2) the compound having a butylene oxide chain or a propylene oxide chain and one or two (meth) acrylfluorenyl groups preferably has 1 to 20, more preferably 4 to 15 And further preferably 6 to 12 C 4 H 8 O or C 3 H 6 O (meth) acrylate or di (meth) acrylate. (b2) The content of the compound having a butylene oxide chain or a propylene oxide chain and one or two (meth) acrylfluorene groups is preferably more than 0 with respect to the total amount of the solid content of the photosensitive resin composition. It is 20% by mass or less. The photosensitive resin composition may contain (b3) a compound having an aromatic ring and an ethylenically unsaturated bond as (B) a compound having an ethylenically unsaturated bond. (b3) The compound having an aromatic ring and an ethylenically unsaturated bond may further have an alkylene oxide chain. The aromatic ring is preferably incorporated into the compound in the form of a divalent skeleton derived from bisphenol A, a divalent skeleton derived from naphthalene, a divalent aromatic group such as phenylene, methyl phenylene, and the like. The alkylene oxide chain may be an ethylene oxide chain, a propylene oxide chain, or a combination thereof. The ethylenically unsaturated bond is preferably incorporated into the (b3) compound having an aromatic ring and an ethylenically unsaturated bond in the form of a (meth) acrylfluorenyl group. Specifically, as the compound having an aromatic ring and an ethylenically unsaturated bond (b3), a compound represented by the following general formula (II) can be used: [化 3] {Where R 1 And R 2 Each independently represents a hydrogen atom or a methyl group, and A is C 2 H 4 , B is C 3 H 6 , N 1 And n 3 Are each independently an integer from 1 to 39, and n 1 + N 3 Is an integer from 2 to 40, n 2 And n 4 Are each independently an integer from 0 to 29, and n 2 + N 4 It is an integer from 0 to 30. The arrangement of repeating units of-(AO)-and-(BO)-can be random or block. In the case of block,-(AO)-and-( BO)-can be biphenyl side}. For example, the two ends of bisphenol A are added with an average of 5 moles of ethylene oxide dimethacrylate, and the two ends of bisphenol A are added with an average of 2 moles each. Dimethacrylate of polyethylene glycol made from ethylene oxide, and polyethylene glycol dimethacrylate made of p-bisphenol A at the two ends added with an average of 1 mole of ethylene oxide each The acrylate and the like are preferable in terms of resolvability and adhesion. A compound having a hetero atom and / or a substituent may be used for the aromatic ring in the general formula (II). Examples of the hetero atom include a halogen atom, and examples of the substituent include an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an aryl group having 6 to 18 carbon atoms, and benzamidine Methyl, amine, 1 to 10 carbon alkyl amine, 2 to 20 carbon dialkyl amine, nitro, cyano, carbonyl, mercapto, 1 to 10 carbon thiol, aromatic Group, hydroxy group, hydroxyalkyl group having 1 to 20 carbon atoms, carboxyl group, carboxyalkyl group having 1 to 10 carbon atoms, fluorenyl group having 1 to 10 carbon atoms, and 1 to 20 carbon group Oxygen, alkoxycarbonyl with 1 to 20 carbons, alkylcarbonyl with 2 to 10 carbons, alkenyl with 2 to 10 carbons, N-alkylamine formamyl with 2 to 10 carbons or containing hetero A cyclic group, or an aryl group substituted with such a substituent. These substituents may also form a condensed ring or a hydrogen atom in the substituent may be substituted with a hetero atom such as a halogen atom. When the aromatic ring in the general formula (II) has a plurality of substituents, the plurality of substituents may be the same or different. (b3) The content of the compound having an aromatic ring and an ethylenically unsaturated bond is preferably more than 0% by mass and 50% by mass or less with respect to the total amount of the solid content of the photosensitive resin composition. When the content exceeds 0% by mass, resolution and adhesion tend to be improved. From the viewpoint of development time and edge melting, the content is preferably 50% by mass or less. From the viewpoints of the adhesion and softness of the photoresist pattern, developability, and suppression of foaming of the developer, the photosensitive resin composition of this embodiment is particularly preferably one containing (b4) 1 mole or more in one molecule. A compound having an ethylene oxide structure of 15 mol or less and having two ethylenically unsaturated bonds in one molecule is referred to as (B) a compound having ethylenically unsaturated bonds. The amount of the ethylene oxide structure is preferably 1 mol or more from the viewpoint of softness, developability of the photoresist pattern, and suppression of foaming of the developing solution, and from the viewpoint of closeness of the photoresist pattern It is preferably 15 mol or less. From the viewpoint of the photoresist pattern adhesiveness and the photoresist pattern flexibility, it is preferable to include two ethylenically unsaturated bonds in one molecule. The ethylenically unsaturated bond is particularly preferably a (meth) acrylfluorenyl group. (b4) The compound containing an ethylene oxide structure of 1 mol to 15 mol in one molecule and having two ethylenically unsaturated bonds in one molecule preferably further includes an aromatic ring. (B4) As a compound containing an ethylene oxide structure of 1 mol or more and 15 mol or less in one molecule and having two ethylenically unsaturated bonds in one molecule, examples include two ends of p-bisphenol A Adding an average of 7.5 moles each of ethylene oxide di (meth) acrylate, and two ends of p-bisphenol A are each adding an average of 5 moles of ethylene oxide. A polyethylene glycol di (meth) acrylate, and a polyethylene glycol di (meth) acrylate obtained by adding an average of 2 moles of ethylene oxide to each end of bisphenol A 2. The two (meth) acrylates of polyethylene glycol obtained by adding an average of 1 mole of ethylene oxide to both ends of bisphenol A, and the average of each of the two ends of hydrogenated bisphenol A Polyethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, nonaethylene glycol di (meth) acrylate and the like made of 5 moles of ethylene oxide. Of these, particularly preferred are di (meth) acrylates of polyethylene glycol obtained by adding an average of 5 moles of ethylene oxide to both ends of bisphenol A, respectively. (b4) The amount of the compound containing an ethylene oxide structure of 1 mol or more and 15 mol or less in one molecule and having two ethylenically unsaturated bonds in one molecule relative to the solid content of the photosensitive resin composition The total amount of the components is preferably 5 mass% or more, more preferably 10 mass% or more, particularly preferably 15 mass% or more, and from the viewpoint of alkali resistance of the photoresist pattern, it is preferably 50 mass% or less. When (b4) a compound containing an ethylene oxide structure of 1 mol or more and 15 mol or less in one molecule and having two ethylenically unsaturated bonds in one molecule is used, (A) the alkali solubility is high The copolymerization ratio of the aromatic group-containing comonomer in the molecule is 40% by mass or more, and in particular, the copolymerization ratio of styrene in the (A) alkali-soluble polymer is 30% by mass or more. And resolution. The (meth) acrylate compound having an alkylene oxide chain and a dipentaerythritol skeleton and the compounds (b1) to (b4) described above can be used individually or in combination. The photosensitive resin composition may include not only a (meth) acrylate compound having an alkylene oxide chain and a dipentaerythritol skeleton and (b1) to (b4) compounds but also other compounds as (B) having an ethylenically unsaturated bond Of compounds. Other compounds include an acrylate compound having at least one (meth) acrylfluorenyl group, a (meth) acrylate having a urethane bond, and an α, β-unsaturated carboxylic acid and a polyhydric alcohol. Compounds obtained by a reaction, compounds obtained by reacting an α, β-unsaturated carboxylic acid with a glycidyl group-containing compound, a phthalic acid-based compound, and the like. Among these, a (meth) acrylate compound having at least two (meth) acrylfluorenyl groups is preferable from the viewpoints of resolution, adhesion, and peeling time. The (meth) acrylate compound having at least two (meth) acrylfluorenyl groups may be di-, tri-, tetra-, penta-, hexa- (meth) acrylate or the like. For example, polyethylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, and di (meth) acrylate having both ethylene oxide and polypropylene oxide (e.g., "FA-023M , FA-024M, FA-027M, product name, manufactured by Hitachi Chemical Co., Ltd. ") From the viewpoints of flexibility, resolvability, and adhesion, etc. are preferred. Also, 4-n-nonylphenoxy octaethylene glycol acrylate, 4-n-nonylphenoxy tetraethylene glycol acrylate, γ-chloro-β-hydroxypropyl phthalate β'-methyl A compound having one ethylenically unsaturated bond, such as propylene ethoxyethyl ester, is preferred from the viewpoints of peelability and flexibility of the cured film, and γ-chloro-β-hydroxypropyl phthalate β'- Methacryloxyethyl is also preferable from a viewpoint of sensitivity, resolvability, and adhesiveness. In this embodiment, in order to suppress the exudation of the constituent components of the dry film photoresist and improve the storage stability, it is preferably 70% by mass based on the total solid component content of the compound having an ethylenically unsaturated bond (B) Above, more preferably 80% by mass or more, still more preferably 90% by mass or more, even more preferably 100% by mass is a compound having a weight average molecular weight of 500 or more. From the viewpoint of suppressing the chemical resistance of the exudation and the photoresist pattern, the weight average molecular weight of the compound having an ethylenically unsaturated bond (B) is preferably 760 or more, more preferably 800 or more, and even more preferably 830 or more , Especially preferably above 900. The weight average molecular weight of the (B) compound having an ethylenically unsaturated bond can be determined as a molecular weight calculated from the molecular structure of the (B) compound having an ethylenically unsaturated bond. When there are a plurality of types (B) of compounds having an ethylenically unsaturated bond, they can be determined by weighting the molecular weight of each compound according to the content. From the viewpoints of chemical resistance, adhesion, high resolution, and shape of the foot of the photoresist pattern, the concentration of the methacrylfluorenyl group in the compound having an ethylenically unsaturated bond is preferably (B) 0.20 mol / 100 g or more, more preferably 0.30 mol / 100 g or more, and even more preferably 0.35 mol / 100 g or more. The upper limit of the concentration of the methacryl group is not limited as long as the polymerizability and alkali developability are ensured, and it may be, for example, 0.90 mol / 100 g or less or 0.80 mol / 100 g or less. From the same viewpoint, the value of (B) the concentration of methacryl group in the compound having an ethylenically unsaturated bond / (the concentration of methacryl group + the concentration of acryl group) is preferably 0.50 or more , More preferably 0.60 or more, even more preferably 0.80 or more, particularly preferably 0.90 or more, and most preferably 0.95 or more. In this embodiment, from the viewpoints of improving the adhesion of the photoresist pattern and suppressing poor curing of the photoresist pattern, delaying the development time, cold flow, bleeding, and peeling delay of the cured photoresist, the photosensitive resin composition The total content of all (B) compounds having an ethylenically unsaturated bond in the photosensitive resin composition is preferably 1% by mass to 70% by mass, and more preferably 2% by mass to 60% by mass with respect to the total solid content of the photosensitive resin composition. %, More preferably in the range of 4% by mass to 50% by mass. (C) Photopolymerization initiator (C) The photopolymerization initiator is a compound which polymerizes a monomer by light. The photosensitive resin composition may contain, as the (C) photopolymerization initiator, a compound generally known in the art. In this embodiment, (C) the photopolymerization initiator includes a compound that functions as a polymerization initiator by absorbing the first active light having a central wavelength of less than 390 nm and the second active light having a central wavelength of 390 nm or more. . Thereby, the photosensitive resin composition can have photosensitivity to a 1st active light and a 2nd active light, and can be used for dual-wavelength exposure. Therefore, as the (C) photopolymerization initiator used in the present embodiment, it is advantageous to have a plurality of compounds having extremely high absorption in the wavelength range of the first active light and the second active light. More specifically, (C) the photopolymerization initiator contains anthracene and / or anthracene derivative. The use of at least anthracene and / or anthracene derivative as the (C) photopolymerization initiator is advantageous in that the photosensitive resin composition of the present embodiment has a composition suitable for two-wavelength exposure. The total content of the (C) photopolymerization initiator in the photosensitive resin composition is preferably 0.01 to 20% by mass, more preferably 0.05 to 10% by mass, and still more preferably 0.1 to 7% by mass. It is particularly preferably within a range of 0.1% by mass to 6% by mass. (C) The total content of the photopolymerization initiator is preferably 0.01% by mass or more from the viewpoint of obtaining sufficient sensitivity, and from the viewpoint of sufficiently transmitting light to the bottom surface of the photoresist to obtain good high resolution In other words, it is preferably 20% by mass or less. The photosensitive resin composition contains anthracene and / or anthracene derivative as a (C) photopolymerization initiator from a viewpoint of improving sensitivity and adhesiveness. From the viewpoint of obtaining good adhesion and resolution, the anthracene derivative preferably has an alkoxy group having 1 to 40 carbon atoms which may have a substituent at at least one of the 9- or 10-position, and more preferably At least one of the 9 or 10 positions has an alkoxy group having 1 to 30 carbon atoms which may have a substituent. From the standpoint of obtaining good adhesion and resolution, it is preferable to have an alkoxy group having 1 to 40 carbon atoms which may have a substituent at the 9 and 10 positions, and it is more preferable to have an optionally substituted group at the 9 and 10 positions. An alkoxy group having 1 to 30 carbon atoms. The carbon numbers of the 9- and 10-bases may be the same or different. Examples of the alkoxy group which may have a substituent include a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, a third butoxy group, a 2-methylpropoxy group, 1-methylpropoxy, n-pentyloxy, isopentyloxy, n-hexyloxy, 2-ethylhexyloxy, nonyloxy, decoxy, undecyloxy, dodecyloxy, Tetradecyloxy, hexadecyloxy, eicosyloxy, cyclohexyloxy, noxyloxy, tricyclodecyloxy, tetracyclododecyloxy, adamantyloxy , Methyladamantyloxy, ethyladamantyloxy, and butanedamantyloxy; halogen-modified alkoxy, such as chlorobutoxy, chloropropoxy; alkoxy groups with added hydroxyl groups , Such as hydroxybutoxy; alkoxy added with cyano, such as cyanobutoxy; alkoxy added with alkylene oxide, such as methoxybutoxy; Alkoxy, such as phenoxybutoxy; etc. Among these, n-butoxy is more preferable. From the viewpoint of obtaining good adhesion and resolution, the anthracene derivative preferably has an aryl group having 6 to 40 carbon atoms which may have a substituent in at least one of the 9 or 10 positions, and more preferably the 9 position. Or at least one of the 10 positions has an aryl group having 6 to 30 carbon atoms which may have a substituent. From the viewpoint of obtaining good adhesion and resolution, an aryl group having 6 to 40 carbon atoms which may have a substituent at the 9 and 10 positions is more preferable, and an aryl group having a substituent which may have a 9 to 10 position is more preferable. An aryl group having 6 to 30 carbon atoms. The carbon numbers of the 9- and 10-bases may be the same or different. The bases at 9 and 10 may be the same base or different bases. For example, the 9-position group is an alkoxy group having 1 to 40 carbon atoms which may have a substituent, and the 10-position group may also be an aryl group having 6 to 40 carbon atoms which may have a substituent. Examples of the aryl group having 6 to 40 carbon atoms which may have a substituent include a phenyl group, a biphenyl group, a naphthyl group, and an anthryl group; an aryl group to which an alkoxy group is added, such as a methoxyphenyl group and an ethoxy group Phenyl groups; aryl groups added with alkyl groups, such as tolyl, xylyl, 2,4,6-trimethylphenyl, nonylphenyl groups; aryl groups added with halogen, such as chlorophenyl groups; An aryl group having a hydroxy group, such as a hydroxyphenyl group. Among these, phenyl is more preferable. The anthracene derivative is preferably represented by the following general formula (IV). [Chemical 4] R 1 Independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 40 carbon atoms, a substituted or unsubstituted alicyclic group having 3 to 20 carbon atoms, an alkenyl group having 2 to 4 carbon atoms, Substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl, or N (R ') 2 Base, 2 or more R 1 They may be bonded to each other to form a cyclic structure, and the cyclic structure may also include heteroatoms. X independently represents a single bond, an oxygen atom, a sulfur atom, a carbonyl group, a sulfonyl group, -N (R ')-group, -CO-O- group, -CO-S- group, -SO 2 -O-based, -SO 2 -S-base, -SO 2 -N (R ')-group, -O-CO- group, -S-CO- group, -O-SO 2 -Base or S-SO 2 -base. Where X is a single bond and R 1 Exceptions are combinations of hydrogen atoms (ie, unsubstituted anthracene). The above R ′ represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 40 carbon atoms, a substituted or unsubstituted alicyclic group having 3 to 20 carbon atoms, an alkenyl group having 2 to 4 carbon atoms, For substituted or unsubstituted aryl groups or substituted or unsubstituted heteroaryl groups having 6 to 40 carbon atoms, R 'may also be bonded to each other to form a cyclic structure, and the cyclic structure may also include hetero atoms. . p is an integer of 1 to 10, and preferably 2 to 4. As the above R 1 And substituted or unsubstituted alkyl groups having 1 to 40 carbon atoms in R ′, specifically, methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, n-heptyl Base, n-octyl, n-nonyl, n-decyl, n-undecyl, n-dodecyl, n-tetradecyl, n-hexadecyl, n-icosyl, isopropyl, isobutyl Base, second butyl, and third butyl. As the above R 1 And specific examples of the substituted or unsubstituted alicyclic group having 3 to 20 carbon atoms in R ′, and examples thereof include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, and 6 to 20 carbon atoms There are bridged alicyclic hydrocarbon groups (e.g., alkoxy, tricyclodecyl, tetracyclododecyl, adamantyl, methyladamantyl, ethyladamantyl, and butanyl adamyl). and many more. As the above R 1 Specific examples of the alkenyl group having 2 to 4 carbon atoms in R ′ include a vinyl group and a propenyl group. As the above R 1 And specific examples of substituted or unsubstituted aryl groups having 6 to 40 carbon atoms in R ′ include phenyl, biphenyl, naphthyl, anthryl, methoxyphenyl, and ethoxybenzene Methyl, tolyl, xylyl, 2,4,6-tricyl, nonylphenyl, chlorophenyl, hydroxyphenyl. As the above R 1 And the substituted or unsubstituted heteroaryl group in R ′ include a group containing at least one hetero atom such as a sulfur atom, an oxygen atom, and a nitrogen atom in the substituted or unsubstituted aryl group, such as pyridine , Imidazolyl, morpholinyl, piperidinyl, pyrrolidinyl, and the like. Moreover, the above-mentioned R 1 And each hydrocarbon group of R 'may be substituted with a substituent. Examples of such a substituent include a hydroxyl group, a carboxyl group, and a hydroxyalkyl group having 1 to 4 carbon atoms (for example, hydroxymethyl, 1-hydroxyethyl, 2-hydroxyethyl, 1-hydroxypropyl, and 2-hydroxypropyl). Group, 3-hydroxypropyl, 1-hydroxybutyl, 2-hydroxybutyl, 3-hydroxybutyl, 4-hydroxybutyl, etc.), alkoxy groups having 1 to 4 carbon atoms (for example, methoxy, ethyl (Oxy, n-propoxy, isopropoxy, n-butoxy, 2-methylpropoxy, 1-methylpropoxy, third butoxy, etc.), cyano, carbon number 2 to 5 Cyanoalkyl (e.g. cyanomethyl, 2-cyanoethyl, 3-cyanopropyl, 4-cyanobutyl, etc.), alkoxycarbonyl (e.g. methoxycarbonyl, ethoxycarbonyl) , Third butoxycarbonyl, etc.), alkoxycarbonylalkoxy (such as methoxycarbonylmethoxy, ethoxycarbonylmethoxy, third butoxycarbonylmethoxy, etc.), halogen atom ( (For example, fluorine, chlorine, bromine, etc.) and fluoroalkyl (for example, fluoromethyl, trifluoromethyl, pentafluoroethyl, etc.). Above R 1 And each of R 'is preferably substituted with a halogen atom. In particular, the anthracene derivative preferably has an alkoxy group substituted with a halogen atom at the 9-position and / or the 10-position. As the above R 1 And preferred specific examples of R ′ include hydrogen atom, methyl, ethyl, n-propyl, isopropyl, n-butyl, third butyl, n-pentyl, n-hexyl, n-heptyl, n- Octyl, cyclopentyl, cyclohexyl, camphormethyl, noryl, p-tolylmethyl, benzyl, methylbenzyl, phenyl and 1-naphthyl. Preferred examples of the X include a single bond, an oxygen atom, a sulfur atom, a -N (R ')-group, a -O-CO- group, and an O-SO. 2 -base. Here, when X is a -N (R ')-group, the R' is preferably a hydrogen atom, methyl, ethyl, n-propyl, isopropyl, n-butyl, cyclopentyl, Cyclohexyl, camphor, phenyl, or benzyl. Examples of the compound represented by the general formula (IV) include 1-methylanthracene, 2-methylanthracene, 2-ethylanthracene, 2-tert-butylanthracene, 9-methylanthracene, 9,10-dimethylanthracene, 9-vinylanthracene, 9-phenylanthracene, 9,10-diphenylanthracene, 2-bromo-9,10-diphenylanthracene, 9- (4-bromobenzene ) -10-phenylanthracene, 9- (1-naphthyl) anthracene, 9- (2-naphthyl) anthracene, 2-bromo-9,10-bis (2-naphthyl) anthracene, 2,6- Dibromo-9,10-bis (2-naphthyl) anthracene, 9,10-diethoxyanthracene, 9,10-dipropoxyanthracene, 9,10-dibutoxyanthracene, 9,10- Bis (2-ethylhexyloxy) anthracene, 1,2-benzoanthracene, 1,2,10-trihydroxyanthracene, 1,4,9,10-tetrahydroxyanthracene, 9-anthracene methanol, 1-amine Anthracene, 2-aminoanthracene, 9- (methylaminomethyl) anthracene, 9-acetamidoanthracene, 9-anthracenealdehyde, 10-methyl-9-anthracene, 1,8,9-tris Acetyloxyanthracene and the like. Among these, 9,10-dimethylanthracene, 9,10-diphenylanthracene, 9,10-diethoxyanthracene, 9,10-dipropoxyanthracene, and 9,10-bis Butoxyanthracene, 9,10-bis (2-ethylhexyloxy) anthracene, 9,10-bis- (3-chloropropoxy) anthracene, especially from the viewpoints of sensitivity, adhesion, and resolution , More preferably 9,10-diethoxyanthracene, 9,10-dibutoxyanthracene and 9,10-diphenylanthracene, 9,10-bis- (3-chloropropoxy) anthracene, especially Preferred are 9,10-dibutoxyanthracene and 9,10-diphenylanthracene. 9,10-dibutoxyanthracene is particularly advantageous in terms of adhesion and resolution. The compound represented by the general formula (IV) may be used alone or in combination of two or more kinds. The compound represented by the above general formula (IV) provides a display for dual-wavelength exposure using a first active light having a center wavelength of 390 nm or less and a second active light having a center wavelength of 390 nm or more as a center wavelength. A photosensitive resin composition having excellent sensitivity, adhesion, and resolution is particularly useful. In one aspect, the (C) photopolymerization initiator preferably contains an anthracene derivative having a halogen atom. A preferable example of the anthracene derivative having a halogen atom is a halogen substitute of 9,10-dialkoxyanthracene. A preferred example of the halogen substituent is a compound in which the alkoxy group at the 9-position and / or the 10-position of the 9,10-dialkoxyanthracene is modified by one or more halogens. Preferred examples of the alkoxy group include those described above as the alkoxy group having 1 to 40 carbon atoms. In one aspect, as the anthracene derivative, a compound having a halogen atom directly bonded to the anthracene skeleton is also preferable. Examples of such anthracene compounds include 9-bromo-10-phenylanthracene, 9-chloro-10-phenylanthracene, 9-bromo-10- (2-naphthyl) anthracene, and 9-bromo-10- ( 1-naphthyl) anthracene, 9- (2-biphenyl) -10-bromoanthracene, 9- (4-biphenyl) -10-bromoanthracene, 9-bromo-10- (9-phenanthryl) anthracene , 2-bromoanthracene, 9-bromoanthracene, 2-chloroanthracene, 9,10-dibromoanthracene. The total amount of anthracene and anthracene derivative, or in a preferred embodiment, the amount of the compound represented by the general formula (IV) is preferably 0.05 to 5% by mass with respect to the total solid content of the photosensitive resin composition. The range is more preferably 0.1 to 3% by mass, and even more preferably 0.1 to 1.0% by mass. (C) The photopolymerization initiator may further include compounds other than anthracene and anthracene derivatives. Examples of such compounds include quinones, aromatic ketones, acetophenones, fluorenylphosphine oxides, and benzoins. Or benzoin ethers, dialkyl ketals, 9-oxosulfur &#134079; Type, dialkylaminobenzoates, oxime esters, acridines (e.g. 9-phenylacridine, bisacridylheptane, 9- (p-methylphenyl) acridine, 9- ( M-methylphenyl) acridine is preferred in terms of sensitivity, resolution, and adhesion), hexaarylbiimidazole, pyrazoline compounds, coumarin compounds (e.g., 7-diethylamino- 4-methylcoumarin is preferred in terms of sensitivity, resolvability, and adhesion), N-arylamino acid or an ester compound thereof (e.g., N-phenylglycine) In terms of adhesiveness and adhesion), and halogen compounds (for example, tribromomethylphenylsulfonium). These can be used individually by 1 type or in combination of 2 or more types. In addition, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2-methyl-1- (4-methylthiophenyl) -2-morpholine can also be used Propane-1-one, 2,4,6-trimethylbenzylidene-diphenyl-phosphine oxide, triphenylphosphine oxide, and the like. Examples of the aromatic ketones include benzophenone, Michelin [4,4'-bis (dimethylamino) benzophenone], and 4,4'-bis (diethylamino). Benzophenone, 4-methoxy-4'-dimethylaminobenzophenone. These can be used individually by 1 type or in combination of 2 or more types. Among these, 4,4'-bis (diethylamino) benzophenone is preferable from a viewpoint of adhesiveness. Furthermore, from the viewpoint of transmittance, the content of the aromatic ketones in the photosensitive resin composition is preferably in a range of 0.01% by mass to 0.5% by mass, and more preferably in a range of 0.02% by mass to 0.3% by mass. Examples of hexaarylbiimidazole include 2- (o-chlorophenyl) -4,5-diphenylbiimidazole, 2,2 ', 5-tri- (o-chlorophenyl) -4- ( 3,4-dimethoxyphenyl) -4 ', 5'-diphenylbiimidazole, 2,4-bis- (o-chlorophenyl) -5- (3,4-dimethoxyphenyl) ) -Diphenylbiimidazole, 2,4,5-tri- (o-chlorophenyl) -diphenylbiimidazole, 2- (o-chlorophenyl) -bis-4,5- (3,4-di (Methoxyphenyl) -biimidazole, 2,2'-bis- (2-fluorophenyl) -4,4 ', 5,5'-tetra- (3-methoxyphenyl) -biimidazole, 2,2'-bis- (2,3-difluoromethylphenyl) -4,4 ', 5,5'-tetra- (3-methoxyphenyl) -biimidazole, 2,2'- Bis- (2,4-difluorophenyl) -4,4 ', 5,5'-tetra- (3-methoxyphenyl) -biimidazole, 2,2'-bis- (2,5- Difluorophenyl) -4,4 ', 5,5'-tetra- (3-methoxyphenyl) -biimidazole, 2,2'-bis- (2,6-difluorophenyl) -4 , 4 ', 5,5'-tetra- (3-methoxyphenyl) -biimidazole, 2,2'-bis- (2,3,4-trifluorophenyl) -4,4', 5 , 5'-tetra- (3-methoxyphenyl) -biimidazole, 2,2'-bis- (2,3,5-trifluorophenyl) -4,4 ', 5,5'-tetra -(3-methoxyphenyl) -biimidazole, 2,2'-bis- (2,3,6-trifluorophenyl) -4,4 ', 5,5'-tetra- (3-methyl (Oxyphenyl) -biimidazole, 2,2'-bis- (2,4,5-trifluorophenyl) -4,4 ', 5,5'-tetra- (3-methoxy (Phenyl) -biimidazole, 2,2'-bis- (2,4,6-trifluorophenyl) -4,4 ', 5,5'-tetra- (3-methoxyphenyl) -bi Imidazole, 2,2'-bis- (2,3,4,5-tetrafluorophenyl) -4,4 ', 5,5'-tetra- (3-methoxyphenyl) -biimidazole, 2 , 2'-bis- (2,3,4,6-tetrafluorophenyl) -4,4 ', 5,5'-tetra- (3-methoxyphenyl) -biimidazole, and 2,2 '-Bis- (2,3,4,5,6-pentafluorophenyl) -4,4', 5,5'-tetra- (3-methoxyphenyl) -biimidazole, etc .; these may These are used individually by 1 type or in combination of 2 or more types. From the viewpoints of sensitivity, resolution, and adhesion, 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer is preferred. From the viewpoint of improving the peeling characteristics and / or sensitivity of the photosensitive resin layer, the content of the hexaarylbiimidazole compound in the photosensitive resin composition is preferably 0.05% to 8% by mass, and more preferably 0.1% by mass. It is -7 mass%, and more preferably within a range of 1 mass% to 6 mass%. From the standpoint of peeling characteristics, sensitivity, resolution, and adhesion of the photosensitive resin layer, the photosensitive resin composition preferably contains one or two or more kinds of pyrazoline compounds as (C) photopolymerization. Starting agent. As the pyrazoline compound, from the above viewpoint, for example, 1-phenyl-3- (4-third-butyl-styryl) -5- (4-third-butyl-phenyl)- Pyrazoline, 1- (4- (benzoxazol-2-yl) phenyl) -3- (4-third butyl-styryl) -5- (4-third butyl-phenyl ) -Pyrazoline, 1-phenyl-3- (4-biphenyl) -5- (4-third butyl-phenyl) -pyrazoline, 1-phenyl-3- (4-bi Phenyl) -5- (4-third octyl-phenyl) -pyrazoline, 1-phenyl-3- (4-isopropylstyryl) -5- (4-isopropylphenyl ) -Pyrazoline, 1-phenyl-3- (4-methoxystyryl) -5- (4-methoxyphenyl) -pyrazoline, 1-phenyl-3- (3, 5-dimethoxystyryl) -5- (3,5-dimethoxyphenyl) -pyrazoline, 1-phenyl-3- (3,4-dimethoxystyryl) -5- (3,4-dimethoxyphenyl) -pyrazoline, 1-phenyl-3- (2,6-dimethoxystyryl) -5- (2,6-dimethyl Oxyphenyl) -pyrazoline, 1-phenyl-3- (2,5-dimethoxystyryl) -5- (2,5-dimethoxyphenyl) -pyrazoline, 1-phenyl-3- (2,3-dimethoxystyryl) -5- (2,3-dimethoxyphenyl) -pyrazoline, 1-phenyl-3- (2, 4-dimethoxystyryl) -5- (2,4-dimethoxyphenyl) -pyrazoline , More preferably 1-phenyl-3- (4-biphenyl) -5- (4-tert - butylphenyl) - pyrazoline. (D) Additive The photosensitive resin composition may contain additives such as a dye, a plasticizer, an antioxidant, and a stabilizer, if necessary. For example, additives listed in Japanese Patent Laid-Open No. 2013-156369 can be used. From the viewpoints of colorability, hue stability, and exposure contrast, the photosensitive resin composition preferably contains tris (4-dimethylaminophenyl) methane [crypto crystal violet] and / or diamond green (Hodogaya Chemical Co., Ltd. makes Aizen (registered trademark) DIAMOND GREEN GH) as a dye. The content of the dye in the photosensitive resin composition is preferably 0.001% by mass to 3% by mass, more preferably 0.01% by mass to 2% by mass, and still more preferably within a range of 0.02% by mass to 1% by mass. The content of the dye is preferably 0.001% by mass or more from the viewpoint of obtaining good coloring properties, and is preferably 3% by mass or less from the viewpoint of maintaining the sensitivity of the photosensitive resin layer. From the viewpoints of thermal stability and storage stability of the photosensitive resin composition, the photosensitive resin composition preferably contains a material selected from the group consisting of a radical polymerization inhibitor, for example, an aluminum nitrosophenylhydroxylamine salt, and p-methoxyl. Phenol, 4-tert-butylcatechol, 4-ethyl-6-tert-butylphenol, etc .; benzotriazoles, such as 1- (N, N-bis (2-ethylhexyl) amine Methyl) -1,2,3-benzotriazole, 2,2 '-(((methyl-1H-benzotriazol-1-yl) methyl) imino) diethanol, 1- 1: 1 mixture of (2-di-n-butylaminomethyl) -5-carboxybenzotriazole and 1- (2-di-n-butylaminomethyl) -6-carboxybenzotriazole, etc .; Carboxybenzotriazoles, such as 4-carboxy-1,2,3-benzotriazole, 5-carboxy-1,2,3-benzotriazole, 6-carboxy-1,2,3-benzo Triazole and the like; and compounds having a glycidyl group, such as bisphenol A diglycidyl ether, hydrogenated bisphenol A diglycidyl ether, neopentyl glycol diglycidyl ether, etc .; at least one of the group consisting of Stabilizer. In addition, it may contain 2-mercaptobenzimidazole, 1H-tetrazole, 1-methyl-5-mercapto-1H-tetrazole, 2-amino-5-mercapto-1,3,4-thiadiazole, 3-amino-5-mercapto-1,2,4-triazole, 3-mercapto-1,2,4-triazole, 3-mercaptotriazole, 4,5-diphenyl-1,3-di Azole-2-yl, 5-amino-1H-tetrazole and the like. The total content of all stabilizers in the photosensitive resin composition is preferably from 0.001% by mass to 3% by mass, more preferably from 0.01% by mass to 1% by mass, and still more preferably from 0.05% by mass to 0.7% by mass. . The total content of the stabilizer is preferably 0.001% by mass or more from the viewpoint of imparting good storage stability to the photosensitive resin composition, and is preferably 3% from the viewpoint of maintaining the sensitivity of the photosensitive resin layer. %the following. The additives described above can be used singly or in combination of two or more. <Photosensitive resin composition preparation liquid> In this embodiment, a photosensitive resin composition preparation liquid can be formed by adding a solvent to a photosensitive resin composition. Preferred solvents include ketones, such as methyl ethyl ketone (MEK), acetone, and the like; and alcohols, such as methanol, ethanol, and isopropanol. It is preferable to add a solvent to the photosensitive resin composition so that the viscosity of the photosensitive resin composition preparation liquid becomes 500 mPa · sec to 4000 mPa · sec at 25 ° C. <Photosensitive resin laminated body> In this embodiment, a photosensitive resin laminated body including a support and a photosensitive resin layer including the above-mentioned photosensitive resin composition laminated on the support can be provided. The photosensitive resin laminated body may have a protective layer on the opposite side to the support side of the photosensitive resin layer as needed. The support is not particularly limited, and a transparent support that transmits light emitted from an exposure light source is preferred. Examples of such a support include a polyethylene terephthalate film, a polyvinyl alcohol film, a polyvinyl chloride film, a vinyl chloride copolymer film, a polyvinylidene chloride film, and a vinylidene chloride copolymer film. , Polymethyl methacrylate copolymer film, polystyrene film, polyacrylonitrile film, styrene copolymer film, polyamide film, and cellulose derivative film. These films can also be stretched if necessary. The haze is preferably 0.01% to 5.0%, more preferably 0.01% to 2.5%, and still more preferably 0.01% to 1.0%. Regarding the thickness of the film, although the thinner the film, the more advantageous it is in terms of image formation and economy, but it is preferably 10 μm to 30 μm because of the need to maintain strength. In addition, an important characteristic of the protective layer for the photosensitive resin laminate is that the adhesion between the protective layer and the photosensitive resin layer is smaller than the adhesion between the support and the photosensitive resin layer and can be easily peeled off. As a protective layer, a polyethylene film, a polypropylene film, etc. are preferable, for example. For example, a film excellent in peelability described in Japanese Patent Laid-Open No. 59-202457 can be used. The film thickness of the protective layer is preferably 10 μm to 100 μm, and more preferably 10 μm to 50 μm. In this embodiment, the thickness of the photosensitive resin layer in the photosensitive resin laminate is preferably 5 μm to 100 μm, and more preferably 7 μm to 60 μm. The smaller the thickness of the photosensitive resin layer, the higher the resolution of the photoresist pattern. On the other hand, the larger the thickness, the higher the strength of the cured film. Therefore, it can be selected according to the application. As a method for producing a photosensitive resin laminated body by sequentially laminating a support, a photosensitive resin layer, and a protective layer as necessary, a known method can be used. For example, the above-mentioned photosensitive resin composition blending liquid is prepared, and then the blending liquid is applied to a support using a rod coater or a roll coater and dried, and the photosensitive resin is laminated on the support. The photosensitive resin layer formed by the composition preparation liquid. Then, a protective layer is laminated on the photosensitive resin layer as necessary, whereby a photosensitive resin laminated body can be produced. <Method for Manufacturing Photoresist Pattern> This embodiment also provides a method for manufacturing a photoresist pattern. The method includes: an exposure step for exposing the photosensitive resin composition; and a developing step for developing the exposed photosensitive resin composition. The method preferably includes, in order, a laminating step of laminating a photosensitive resin layer containing the above-mentioned photosensitive resin composition on a support; an exposing step of exposing the photosensitive resin layer; and a developing step, It develops the photosensitive resin layer after exposure. An example of a specific method for forming a photoresist pattern in this embodiment will be described below. First, in a lamination step, a photosensitive resin layer is formed on a substrate using a laminator. Specifically, when the photosensitive resin laminated body has a protective layer, the protective layer is peeled off, and then the photosensitive resin layer is heated and pressure-bonded to the substrate surface by a laminator to be laminated. Examples of the material of the substrate include copper, stainless steel (SUS), glass, and indium tin oxide (ITO). In this embodiment, the photosensitive resin layer may be laminated on only one side of the substrate surface, or may be laminated on both sides if necessary. The heating temperature during lamination is usually 40 ° C to 160 ° C. In addition, the heat and pressure bonding when laminating is performed twice or more can improve the adhesion of the obtained photoresist pattern to the substrate. When heating and crimping, a two-stage laminating machine equipped with a double roll can be used, or crimping can be performed by repeatedly passing the laminate of the substrate and the photosensitive resin layer through the roll several times. Then, in the exposure step, the photosensitive resin layer is exposed to active light using an exposure machine. Exposure can be performed after peeling a support as needed. In the case of exposure through a photomask, the exposure amount depends on the illuminance and exposure time of the light source, and can also be measured using a light meter. In the exposure step, direct imaging exposure can also be performed. In direct imaging exposure, a direct drawing device is used to expose the substrate without using a mask. As a light source, a semiconductor laser or an ultra-high-pressure mercury lamp with a wavelength of 350 nm to 410 nm is used. When a computer is used to control a drawing pattern, the exposure amount depends on the illuminance of the exposure light source and the movement speed of the substrate. It can also be exposed by projecting the image of the photomask through a lens. In this embodiment, a direct imaging exposure step is applied. This step uses active light (preferably laser light) with a wavelength of less than 390 nm as the center wavelength and active light (center wavelength with a wavelength of 390 nm or more). Preferably laser light). In this embodiment, the curing reaction of the photosensitive resin can also be promoted by performing heat treatment after exposure. The heat treatment after the exposure can be performed by a known method such as heating by an oven or heating by a heating roller. Next, in the developing step, a developing device is used to remove unexposed portions or exposed portions in the exposed photosensitive resin layer using a developing solution. When a support is present on the photosensitive resin layer after exposure, it is removed. Then, the unexposed portion or the exposed portion is developed and removed by using a developing solution containing an alkaline aqueous solution, and a photoresist image is obtained through a water washing step and a drying step. In the water washing step, ion-exchanged water or water to which magnesium ions or calcium ions are added may be used. The alkaline aqueous solution is preferably Na 2 CO 3 K 2 CO 3 And other aqueous solutions. The alkaline aqueous solution is selected according to the characteristics of the photosensitive resin layer, and Na is usually used at a concentration of 0.2% to 2% by mass. 2 CO 3 Aqueous solution. Surfactants, defoamers, and small amounts of organic solvents used to promote development can also be mixed in the alkaline aqueous solution. The temperature of the developing solution in the developing step is preferably kept fixed within a range of 20 ° C to 40 ° C. The photoresist pattern is obtained through the above steps, and if necessary, a heating step may be performed at 100 ° C to 300 ° C. By implementing this heating step, the chemical resistance of the photoresist pattern can be improved. In the heating step, a heating furnace using hot air, infrared, or far infrared can be used. <The manufacturing method of a circuit board> The photosensitive resin composition of this embodiment can be used suitably for forming the circuit of a printed circuit board. This embodiment provides a method for manufacturing a circuit board, which is formed by etching or plating a substrate having a photoresist pattern manufactured by the above-mentioned photoresist pattern manufacturing method. Generally, as a circuit formation method of a printed circuit board, a subtractive method and a semi-additive method (SAP) are used. The subtractive method is a method of forming a circuit by removing only non-circuit portions from a conductor disposed on the entire surface of a substrate by etching. The SAP method is as follows: After forming a photoresist on a non-circuit portion of a conductor seed layer disposed on the entire surface of a substrate, only a circuit portion is formed by plating. In this embodiment, the photosensitive resin composition is more preferably used for SAP. In this embodiment, in order to improve the softness of the photoresist pattern, the elongation of the cured product of the photosensitive resin composition is preferably 1 mm or more, more preferably 2 mm or more, and more preferably 40 mm in the lengthwise direction. 3 mm or more. The elongation of the cured product is measured by exposing a photosensitive resin laminate made using the photosensitive resin composition through a rectangular mask of 5 mm × 40 mm, and then exposing it to twice the minimum development time. It was developed over time, and the obtained hardened photoresist was stretched at a speed of 100 mm / min using a tensile tester (manufactured by Orientec (Stock Corporation), RTM-500). In this embodiment, from the viewpoint of the resolvability and flexibility of the photoresist pattern, the Young's modulus of the cured product of the photosensitive resin composition is preferably within a range of 1.5 GPa or more and less than 8 GPa. In this specification, the "Young's modulus" can be measured by the nanoindentation method using the nanoindenter DCM manufactured by TOYO TECHNICA Co., Ltd., for example. Specifically, the "Young's modulus" is a photosensitivity on a substrate obtained by laminating a resin composition to be measured on a substrate using a nanoindenter DCM manufactured by TOYO TECHNICA Co., Ltd. and exposing and developing the resin composition. The surface of the resin composition was measured. As a measurement method, DCM Basic Hardness, Modulus, Tip Cal, Load Control. Msm (MultiLoad Method) is used, and the parameters of the push-in test are set to Percent To Unload = 90%, the maximum load (Maximum Load) = 1 gf, Load Rate Multiple For Unload Rate = 1, Number Of Times to Load = 5, Peak Hold time = 10 s, Load Time (Time To Load) = 15 s, Poisson's ratio (Poisson's ratio) = 0.25. The Young's modulus is set to the value of "Modulas At Max Load". <Manufacturing method of conductor pattern> The manufacturing method of the conductor pattern preferably includes, in order, a lamination step of laminating a photosensitive resin layer containing the photosensitive resin composition on a substrate such as a metal plate, a metal film insulation plate, or the like; An exposure step that exposes the photosensitive resin layer; a development step that obtains a substrate on which a photoresist pattern is formed by removing unexposed portions or exposed portions of the exposed photosensitive resin layer with a developing solution; and The conductor pattern forming step includes etching or plating a substrate on which a photoresist pattern is formed. In this embodiment, the method of manufacturing a conductive pattern is performed by using a metal plate or a metal film insulation plate as a substrate, and forming the photoresist pattern by the above-mentioned photoresist pattern manufacturing method, and then going through the conductor pattern forming step. In the conductor pattern forming step, a conductor pattern is formed on a substrate surface (for example, a copper surface) exposed by development using a known etching method or plating method. Furthermore, the present invention is preferably applied to, for example, the following applications. <Manufacturing method of wiring board> After the conductor pattern is manufactured by the manufacturing method of the conductor pattern, a peeling step of peeling the photoresist pattern from the substrate using an aqueous solution having an alkali stronger than a developing solution is performed, thereby obtaining Wiring board with required wiring pattern (such as printed wiring board). In manufacturing a wiring board, a laminated body of an insulating resin layer and a copper layer, or a flexible substrate is used as a substrate. For SAP, it is preferable to use a laminated body of an insulating resin layer and a copper layer. For SAP, the copper layer is preferably an electroless copper plating layer containing palladium as a catalyst. For SAP, it is also preferable to perform the conductor pattern forming step by a known plating method. In order to perform the improved semi-additive method (MSAP), the substrate is preferably a laminate of an insulating resin layer and a copper foil, and more preferably a copper foil laminate. The alkaline aqueous solution for peeling (hereinafter also referred to as "peeling solution") is not particularly limited, and an aqueous solution of NaOH or KOH with a concentration of 2 to 5 mass% or an organic amine-based peeling solution is generally used. A small amount of a water-soluble solvent can be added to the stripping solution. Examples of the water-soluble solvent include alcohols. The temperature of the peeling liquid in the peeling step is preferably within a range of 40 ° C to 70 ° C. In order to perform SAP, the method of manufacturing a wiring board preferably further includes a step of removing palladium from the obtained wiring board. <Manufacture of lead frame> A lead frame can be manufactured by using a metal plate such as copper, a copper alloy, or an iron-based alloy as a substrate, and forming a photoresist pattern by a photoresist pattern manufacturing method through the following steps. First, a step of forming a conductor pattern by etching the substrate exposed by development is performed. Thereafter, by performing the peeling step of peeling the photoresist pattern by the same method as the method of manufacturing a wiring board, a desired lead frame can be obtained. <Production of Substrate with Concavo-Convex Pattern> A photoresist pattern formed by a photoresist pattern manufacturing method can be used as a protective mask member when a substrate is processed by a sandblasting method. In this case, examples of the substrate include glass, silicon wafers, amorphous silicon, polycrystalline silicon, ceramics, sapphire, and metal materials. A photoresist pattern is formed on these substrates by the same method as the photoresist pattern manufacturing method. Thereafter, a sandblasting process step of blowing a sandblasting material from above the formed photoresist pattern to cut to a target depth, and a stripping step of removing the photoresist pattern portion remaining on the substrate from the substrate using an alkaline stripping solution, etc. Manufactured on a substrate with a fine uneven pattern on a substrate. In the blasting step, a known blasting material may be used, for example, SiC, SiO 2 , Al 2 O 3 CaCO 3 , ZrO, glass, stainless steel and other particles with a particle diameter of 2 μm to 100 μm. <Manufacturing of Semiconductor Packages> After the formation of a large-scale integrated circuit (LSI) has been used as a substrate, a photoresist pattern is formed on the wafer by a photoresist pattern manufacturing method. Semiconductor packages can be manufactured. First, a step of forming a conductive pattern by performing columnar plating of copper, solder, or the like on an opening portion exposed by development is performed. Thereafter, a step of peeling off the photoresist pattern is performed by the same method as the method of manufacturing a wiring board, and then a step of removing a thinner metal layer other than the columnar plating by etching is performed, whereby The required semiconductor package can be obtained. In this embodiment, the photosensitive resin composition can be used for: manufacturing of printed wiring boards; manufacturing of lead frames for IC (Integrated Circuit) chip mounting; precision processing of metal foils such as metal mask manufacturing; ball grid array ( BGA), chip size package (CSP), and other package manufacturing; film-on-chip (COF), tape-and-reel automatic bonding (TAB), and other tape substrate manufacturing; semiconductor bump manufacturing; and ITO electrodes and addressing Manufacturing of partition walls of flat panel displays such as electrodes and electromagnetic wave shields. In addition, the photosensitive resin composition of this embodiment is mainly intended to be used for dual-wavelength exposure by having sensitivity to the first active light and the second active light, but may further have a function of resisting the first active light and the second active light. Photosensitivity of one or more kinds of active light different from the second active light. In this case, for example, three-wavelength exposure can be applied to the photosensitive resin composition of this embodiment in the above-mentioned various applications. The values of the above parameters are measured in accordance with the measurement methods in the following examples unless otherwise specified. [Examples] The measurement of the physical properties of polymers and the methods for making samples for evaluation in Examples, Comparative Examples, and Reference Examples will be described. Second, the evaluation methods and evaluation results for the obtained samples will be disclosed. (1) Measurement or calculation of physical property value <Measurement of weight average molecular weight or number average molecular weight of a polymer> Weight average molecular weight or number average molecular weight of a polymer is a gel permeation chromatography (GPC) manufactured by JASCO Corporation ) (Using pump: Gulliver, PU-1580 type, column: Shodex (registered trademark) (KF-807, KF-806M, KF-806M, KF-802.5) manufactured by Showa Denko Corporation, 4 tubes in series, flowing Phase solvent: Tetrahydrofuran, polystyrene standard sample (calibration curve obtained by Shodex STANDARD SM-105, manufactured by Showa Denko Corporation) was calculated in terms of polystyrene. Furthermore, the degree of dispersion of the molecular weight of the polymer is calculated as the ratio of the weight average molecular weight to the number average molecular weight (weight average molecular weight / number average molecular weight). <Acid Equivalent> In the present disclosure, the term "acid equivalent" means the mass (g) of a polymer having 1 equivalent of a carboxyl group in a molecule. An Hiranuma automatic titration device (COM-555) manufactured by Hiranuma Sangyo Co., Ltd. was used, and an acid equivalent was measured by a potentiometric titration method using a 0.1 mol / L sodium hydroxide aqueous solution. (2) Preparation method of evaluation sample The evaluation sample was prepared as follows. <Production of photosensitive resin layered body> The components shown in the following Tables 1 to 3 (where the number of each component represents the compounding amount (parts by mass) based on the solid content component) and the solvent are sufficiently stirred and mixed, A photosensitive resin composition preparation liquid was obtained. The component names shown by abbreviations in Tables 1 to 3 are shown in Tables 4 to 6. Using a 16 μm-thick polyethylene terephthalate film (manufactured by Toray Co., Ltd., FB-40) as a support film, a bar coater was used to uniformly coat the blending solution on the surface, and the mixture was applied at 95 ° C. It dried in the dryer at 2.5 degreeC for 2.5 minutes, and the photosensitive resin composition layer was formed. The dry thickness of the photosensitive resin composition layer was 25 μm. Next, a 19 μm-thick polyethylene film (manufactured by TAMAPOLY (KK), GF-818) was laminated on the surface of the side of the non-laminated polyethylene terephthalate film of the photosensitive resin composition layer as a protective layer. To obtain a photosensitive resin laminate. <The entire surface of the substrate> As a substrate for evaluation of sensitivity, image properties, adhesion, and resistance to liquid fluids, a laminating material (manufactured by Japan Carlit (Japan), Sakurundum R (registered trademark # 220)) was laminated at a spray pressure of 0.2 MPa. A copper foil laminated board having a thickness of 0.4 mm of a rolled copper foil of 35 μm was spray-washed and polished to prepare a substrate for evaluation. <Lamination> While peeling the polyethylene film of the photosensitive resin laminate, the photosensitive resin laminate was laminated on a heated roll laminator (manufactured by Asahi Kasei Corporation, AL-700) at a roll temperature of 105 ° C. The whole surface was pre-heated to a copper foil laminated board of 60 ° C. to obtain a test piece. The air pressure was set to 0.35 MPa, and the lamination speed was set to 1.5 m / min. <Exposure> In Examples 1 to 23 and Comparative Example 1, exposure was performed using a direct drawing exposure machine (light source: 375 nm (30%) + 405 nm (70%)) and a Stouffer 41-stage exposure meter. The exposure is performed by using the Stouffer 41-stage stepwise exposure meter as a mask to perform exposure, and the maximum residual film level at the time of development is an exposure amount of 19 steps. In Reference Example 1 and Reference Example 3, a direct drawing exposure machine (light source: 355 nm) was used and exposure was performed using a Stouffer 41-stage exposure meter. The exposure is performed by using the Stouffer 41-stage stepwise exposure meter as a mask to perform exposure, and the maximum residual film level at the time of development is an exposure amount of 19 steps. In Reference Example 2 and Reference Example 4, a direct drawing exposure machine (light source: 405 nm) was used and exposure was performed using a Stouffer 41-stage exposure meter. The exposure is performed by using the Stouffer 41-stage stepwise exposure meter as a mask to perform exposure, and the maximum residual film level at the time of development is an exposure amount of 19 steps. In Reference Examples 5 and 6, exposure was performed using a parallel light exposure machine (light source: ultra-high pressure mercury lamp), a Stouffer 41-stage exposure meter, and a glass chromium mask. The exposure is performed by using the Stouffer 41-stage stepwise exposure meter as a mask to perform exposure, and the maximum residual film level at the time of development is an exposure amount of 19 steps. <Development> After peeling the polyethylene terephthalate film from the photosensitive resin laminate, a developing device manufactured by FUJIKIKO is used, and a full-cone nozzle is used to inject a developing spray pressure of 0.15 MPa for 30 minutes at a specific time. 1 mass% Na 2 CO 3 The solution is developed with an aqueous solution, and the unexposed portion of the photosensitive resin layer is dissolved and removed. At this time, the shortest time required for the photosensitive resin layer in the unexposed portion to completely dissolve was measured as the shortest development time, and development was performed at a time three times the minimum development time to produce a photoresist pattern. At this time, the water washing step is performed by using a flat nozzle at a water washing spray pressure of 0.15 MPa for 5 times the development step. (3) Evaluation method of the sample <Sensitivity evaluation> In the above-mentioned exposure step, after exposure through the mask of the Stouffer 41-stage exposure meter, it is developed, and according to the exposure level with the highest residual film level of 19, according to the following criteria Grading. A (Good): The maximum residual film level is 19 and the exposure is 60 mJ / cm 2 the following. B (possible): The highest residual film level is 19, and the exposure exceeds 60 mJ / cm 2 And 70 mJ / cm 2 the following. C (Defective): The highest residual film level is 19, and the exposure exceeds 70 mJ / cm 2 . <Resolvability> In the above-mentioned exposure step, exposure is performed using drawing data having a line pattern with a ratio of 1: 1 between the width of the exposed portion and that of the unexposed portion. It develops according to the said development conditions, and hardened photoresist line is formed. The minimum line width where the hardened photoresist line is normally formed is used as the value of the resolution and classified according to the following criteria. AA (Excellent): The resolution is 18 μm or less. A (Good): The value of the resolution exceeds 18 μm and does not reach 22 μm. C (bad): The value of the resolution is 22 μm or more. <Adhesiveness> In the above-mentioned exposure step, exposure is performed using drawing data having a line pattern having a ratio of 1: 200 in width between the exposed portion and the unexposed portion. It develops according to the said development conditions, and classifies the minimum line width of the hardened photoresist line normally formed as the value of adhesiveness according to the following reference | standard. AA (very good): The value of adhesion is 11 μm or less. A (Good): The value of the adhesion exceeds 11 μm and is 13 μm or less. B (possible): The value of the adhesion exceeds 13 μm and is 15 μm or less. C (poor): The value of the adhesiveness exceeds 15 μm. [Table 1] [Table 2] [table 3] [Table 4] [table 5] [TABLE 6] [Industrial Applicability] The photosensitive resin composition of the present invention can be preferably used for circuit formation by, for example, a subtractive method, a semi-additive method (SAP), or the like.

Claims (27)

一種感光性樹脂組合物，其係用以利用中心波長未達390nm之第1雷射光與中心波長為390nm以上之第2雷射光進行曝光而獲得樹脂硬化物者，並且上述感光性樹脂組合物包含(A)鹼可溶性高分子、(B)具有乙烯性雙鍵之化合物、及(C)光聚合起始劑，上述感光性樹脂組合物具有對上述第1雷射光及上述第2雷射光兩者之感光性，上述(C)光聚合起始劑包含蒽及/或蒽衍生物。A photosensitive resin composition for exposing a hardened resin by exposing a first laser light having a central wavelength of less than 390 nm and a second laser light having a central wavelength of 390 nm or more to obtain a cured resin, and the photosensitive resin composition includes (A) an alkali-soluble polymer, (B) a compound having an ethylenic double bond, and (C) a photopolymerization initiator, and the photosensitive resin composition includes both of the first laser light and the second laser light. For photosensitivity, the (C) photopolymerization initiator contains anthracene and / or anthracene derivative. 如請求項1之感光性樹脂組合物，其中上述(A)鹼可溶性高分子中之含芳香族基之共聚合單體之共聚合比率為40質量%以上，相對於感光性樹脂組合物整體之固形物成分而含有5質量%以上之具有2官能之乙烯性雙鍵且具有1莫耳以上且15莫耳以下之環氧乙烷結構之化合物作為(B)具有乙烯性雙鍵之化合物。For example, the photosensitive resin composition of claim 1, wherein the copolymerization ratio of the aromatic group-containing comonomer in the (A) alkali-soluble polymer is 40% by mass or more, compared to the entire photosensitive resin composition. As a solid component, a compound having 5% by mass or more of a bifunctional ethylenic double bond and having an ethylene oxide structure of 1 mol to 15 mol is referred to as (B) a compound having an ethylenic double bond. 如請求項1或2之感光性樹脂組合物，其中上述(A)鹼可溶性高分子中之苯乙烯之共聚合比率為30質量%以上。The photosensitive resin composition according to claim 1 or 2, wherein the copolymerization ratio of the styrene in the (A) alkali-soluble polymer is 30% by mass or more. 如請求項1或2之感光性樹脂組合物，其中上述蒽衍生物於9位及/或10位具有可具有取代基之碳數1~40之烷氧基及/或可具有取代基之碳數6~40之芳基。The photosensitive resin composition according to claim 1 or 2, wherein the anthracene derivative has an alkoxy group having a carbon number of 1 to 40 and / or a carbon having a substituent at the 9-position and / or 10-position Number 6 ~ 40 of aryl. 如請求項1或2之感光性樹脂組合物，其中上述蒽衍生物於9、10位具有可具有取代基之碳數1~40之烷氧基及/或可具有取代基之碳數6~40之芳基。For example, the photosensitive resin composition of claim 1 or 2, wherein the anthracene derivative has an alkoxy group having a carbon number of 1 to 40 and / or a substituent having a carbon number of 6 to 10 at the 9 and 10 positions. 40's aryl. 如請求項1或2之感光性樹脂組合物，其中上述(C)光聚合起始劑包含9,10-二苯基蒽。The photosensitive resin composition according to claim 1 or 2, wherein the (C) photopolymerization initiator contains 9,10-diphenylanthracene. 如請求項1或2之感光性樹脂組合物，其中上述(C)光聚合起始劑包含9,10-二丁氧基蒽。The photosensitive resin composition according to claim 1 or 2, wherein the (C) photopolymerization initiator comprises 9,10-dibutoxyanthracene. 如請求項1或2之感光性樹脂組合物，其中上述(B)具有乙烯性雙鍵之化合物包含具有3官能以上之乙烯性雙鍵之化合物。The photosensitive resin composition according to claim 1 or 2, wherein the compound (B) having an ethylenic double bond includes a compound having a trifunctional or more ethylenic double bond. 如請求項1或2之感光性樹脂組合物，其中上述(B)具有乙烯性雙鍵之化合物包含具有4官能以上之乙烯性雙鍵之化合物。The photosensitive resin composition according to claim 1 or 2, wherein the compound (B) having an ethylenic double bond includes a compound having a tetrafunctional or more ethylenic double bond. 如請求項1或2之感光性樹脂組合物，其中上述(B)具有乙烯性雙鍵之化合物包含具有6官能以上之乙烯性雙鍵之化合物。The photosensitive resin composition according to claim 1 or 2, wherein the compound (B) having an ethylenic double bond includes a compound having an ethylenic double bond having 6 or more functions. 如請求項1或2之感光性樹脂組合物，其中上述(B)具有乙烯性雙鍵之化合物包含碳數3以上之環氧烷結構。The photosensitive resin composition according to claim 1 or 2, wherein the compound (B) having an ethylenic double bond includes an alkylene oxide structure having a carbon number of 3 or more. 如請求項1或2之感光性樹脂組合物，其中上述第1雷射光之中心波長為350nm以上且380nm以下，上述第2雷射光之中心波長為400nm以上且410nm以下。For example, the photosensitive resin composition of claim 1 or 2, wherein the center wavelength of the first laser light is 350 nm to 380 nm, and the center wavelength of the second laser light is 400 nm to 410 nm. 如請求項9之感光性樹脂組合物，其中上述(C)光聚合起始劑包含9,10-二苯基蒽。The photosensitive resin composition according to claim 9, wherein the (C) photopolymerization initiator contains 9,10-diphenylanthracene. 如請求項13之感光性樹脂組合物，其中上述(B)具有乙烯性雙鍵之化合物包含碳數3以上之環氧烷結構。The photosensitive resin composition according to claim 13, wherein the compound (B) having an ethylenic double bond includes an alkylene oxide structure having a carbon number of 3 or more. 一種感光性樹脂硬化物之製造方法，其包括：利用中心波長未達390nm之第1雷射光與中心波長為390nm以上之第2雷射光將如請求項1或2之感光性樹脂組合物加以曝光。A method for producing a photosensitive resin hardened material, comprising: exposing the photosensitive resin composition as claimed in claim 1 or 2 using a first laser light having a center wavelength of less than 390 nm and a second laser light having a center wavelength of 390 nm or more. . 如請求項15之感光性樹脂硬化物之製造方法，其中上述第1雷射光之中心波長為350nm以上且380nm以下，上述第2雷射光之中心波長為400nm以上且410nm以下。For example, the method for producing a photosensitive resin cured product according to claim 15, wherein the center wavelength of the first laser light is 350 nm to 380 nm, and the center wavelength of the second laser light is 400 nm to 410 nm. 一種光阻圖案之製造方法，其包括：曝光步驟，其係利用中心波長未達390nm之第1雷射光與中心波長為390nm以上之第2雷射光將感光性樹脂組合物加以曝光，該感光性樹脂組合物包含(A)鹼可溶性高分子、(B)具有乙烯性雙鍵之化合物、及(C)光聚合起始劑，上述(C)光聚合起始劑包含蒽及/或蒽衍生物；及顯影步驟，其係將曝光後之感光性樹脂組合物予以顯影。A method for manufacturing a photoresist pattern includes an exposure step of exposing a photosensitive resin composition with a first laser light having a center wavelength of less than 390 nm and a second laser light having a center wavelength of 390 nm or more. The resin composition includes (A) an alkali-soluble polymer, (B) a compound having an ethylenic double bond, and (C) a photopolymerization initiator, and the (C) photopolymerization initiator includes anthracene and / or anthracene derivative And a developing step, which develops the photosensitive resin composition after exposure. 如請求項17之光阻圖案之製造方法，其中上述曝光步驟之上述第1雷射光之中心波長為350nm以上且380nm以下，上述第2雷射光之中心波長為400nm以上且410nm以下。For example, the method for manufacturing a photoresist pattern according to claim 17, wherein the center wavelength of the first laser light in the exposure step is 350 nm or more and 380 nm or less, and the center wavelength of the second laser light is 400 nm or more and 410 nm or less. 一種電路基板之製造方法，其係藉由對具有藉由如請求項17或18之方法所製造之光阻圖案的基板實施蝕刻或鍍覆而形成電路基板。A method of manufacturing a circuit substrate is to form a circuit substrate by etching or plating a substrate having a photoresist pattern manufactured by a method such as claim 17 or 18. 一種感光性樹脂組合物，其包含(A)鹼可溶性高分子、(B)具有乙烯性雙鍵之化合物、及(C)光聚合起始劑，上述(C)光聚合起始劑包含具有鹵素原子之蒽衍生物。A photosensitive resin composition comprising (A) an alkali-soluble polymer, (B) a compound having an ethylenic double bond, and (C) a photopolymerization initiator, wherein the (C) photopolymerization initiator contains a halogen Atomic anthracene derivatives. 如請求項20之感光性樹脂組合物，其中上述(C)光聚合起始劑包含9,10-二烷氧基蒽之鹵素取代物。The photosensitive resin composition according to claim 20, wherein the (C) photopolymerization initiator contains a halogen substitution product of 9,10-dialkoxyanthracene. 如請求項21之感光性樹脂組合物，其中上述(C)光聚合起始劑包含9,10-二烷氧基蒽之9位及/或10位之烷氧基經1個以上之鹵素原子修飾之化合物。The photosensitive resin composition according to claim 21, wherein the (C) photopolymerization initiator comprises a 9-position of 9,10-dialkoxyanthracene and / or a 10-position alkoxy group having one or more halogen atoms Modified compounds. 如請求項20之感光性樹脂組合物，其中上述(C)光聚合起始劑包含具有直接鍵結於蒽骨架之鹵素原子之化合物。The photosensitive resin composition according to claim 20, wherein the (C) photopolymerization initiator includes a compound having a halogen atom directly bonded to an anthracene skeleton. 一種光阻圖案之製造方法，其包括：曝光步驟，其係利用中心波長未達390nm之第1雷射光與中心波長為390nm以上之第2雷射光將如請求項20至23中任一項之感光性樹脂組合物加以曝光；及顯影步驟，其係將曝光後之感光性樹脂組合物予以顯影。A method for manufacturing a photoresist pattern, comprising: an exposure step, which uses the first laser light having a center wavelength of less than 390 nm and the second laser light having a center wavelength of 390 nm or more as in any one of claims 20 to 23 The photosensitive resin composition is exposed; and a developing step, in which the exposed photosensitive resin composition is developed. 一種感光性樹脂組合物，其係用以利用中心波長未達390nm之第1雷射光與中心波長為390nm以上之第2雷射光進行曝光而獲得樹脂硬化物者，並且上述感光性樹脂組合物包含(A)鹼可溶性高分子、(B)具有乙烯性雙鍵之化合物、及(C)光聚合起始劑，上述(A)鹼可溶性高分子中之含芳香族基之共聚合單體之共聚合比率為40質量%以上。A photosensitive resin composition for exposing a hardened resin by exposing a first laser light having a central wavelength of less than 390 nm and a second laser light having a central wavelength of 390 nm or more to obtain a cured resin, and the photosensitive resin composition includes (A) an alkali-soluble polymer, (B) a compound having an ethylenic double bond, and (C) a photopolymerization initiator, the above-mentioned (A) an aromatic-group-containing copolymerizable monomer in the alkali-soluble polymer The polymerization ratio is 40% by mass or more. 如請求項25之感光性樹脂組合物，其相對於感光性樹脂組合物整體之固形物成分而含有5質量%以上之具有2官能之乙烯性雙鍵且具有1莫耳以上且15莫耳以下之環氧乙烷結構之化合物作為上述(B)具有乙烯性雙鍵之化合物。For example, the photosensitive resin composition of claim 25, which contains 5 mass% or more of a bifunctional ethylenic double bond and has 1 mol or more and 15 mol or less with respect to the solid content of the entire photosensitive resin composition. A compound having an ethylene oxide structure is a compound having an ethylenic double bond in the above (B). 一種光阻圖案之製造方法，其包括：曝光步驟，其係利用中心波長未達390nm之第1雷射光與中心波長為390nm以上之第2雷射光將如請求項25或26之感光性樹脂組合物加以曝光；及顯影步驟，其係將曝光後之感光性樹脂組合物予以顯影。A method for manufacturing a photoresist pattern, comprising: an exposure step, using a first laser light having a center wavelength of less than 390 nm and a second laser light having a center wavelength of 390 nm or more to combine a photosensitive resin as described in claim 25 or 26 Exposing the object; and a developing step, which develops the photosensitive resin composition after exposure.
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Families Citing this family (4)

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KR20240046924A (en) * 2018-06-22 2024-04-11 아사히 가세이 가부시키가이샤 Photosensitive resin composition and resist pattern formation method
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005321587A (en) * 2004-05-10 2005-11-17 Nippon Synthetic Chem Ind Co Ltd:The Photosensitive resin composition, and photoresist film and resist pattern forming method using the same
JP2008146045A (en) * 2006-11-15 2008-06-26 Taiyo Ink Mfg Ltd Method for forming solder resist film and photosensitive composition
TW201035676A (en) * 2008-11-18 2010-10-01 Sumitomo Chemical Co Photosensitive resin composition and display device
WO2010126006A1 (en) * 2009-04-30 2010-11-04 日立化成工業株式会社 Photosensitive resin composition, photosensitive element utilizing the composition, method for formation of resist pattern, and process for production of printed circuit board
WO2012101908A1 (en) * 2011-01-25 2012-08-02 日立化成工業株式会社 Photosensitive resin composition, photosensitive element, method for producing resist pattern, and method for manufacturing printed wiring board

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3693199B2 (en) * 1996-07-10 2005-09-07 Ｊｓｒ株式会社 Radiation sensitive resin composition
JP4204700B2 (en) * 1999-06-08 2009-01-07 Ａｚエレクトロニックマテリアルズ株式会社 Photosensitive resin composition and method for improving dry etching resistance of photosensitive resin composition
US8105759B2 (en) 2005-07-05 2012-01-31 Hitachi Chemical Company, Ltd. Photosensitive resin composition, and, photosensitive element, method for forming resist pattern, method for manufacturing printed wiring board and method for manufacturing partition wall for plasma display panel using the composition
WO2007026520A1 (en) * 2005-08-30 2007-03-08 Jsr Corporation Radiation-sensitive resin composition and process for producing plating shaped item
JP4832466B2 (en) 2008-05-09 2011-12-07 日本合成化学工業株式会社 Resist pattern forming method
JP5777461B2 (en) 2011-09-14 2015-09-09 旭化成イーマテリアルズ株式会社 Photosensitive resin composition
JP5948539B2 (en) 2012-01-27 2016-07-06 旭化成株式会社 Photosensitive resin composition
US11635688B2 (en) * 2012-03-08 2023-04-25 Kayaku Advanced Materials, Inc. Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates
JP5948543B2 (en) 2012-05-29 2016-07-06 旭化成株式会社 Photosensitive resin composition
WO2015012272A1 (en) 2013-07-23 2015-01-29 日立化成株式会社 Photosensitive resin composition for projection exposure, photosensitive element, method for forming resist pattern, process for producing printed wiring board and process for producing lead frame
KR20160092793A (en) * 2015-01-28 2016-08-05 롬엔드하스전자재료코리아유한회사 Photosensitive resin composition and insulating film using same
CN114437251B (en) * 2015-04-08 2024-02-20 旭化成株式会社 Photosensitive resin composition
JP2018016696A (en) 2016-07-26 2018-02-01 理想科学工業株式会社 Photosensitive composition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005321587A (en) * 2004-05-10 2005-11-17 Nippon Synthetic Chem Ind Co Ltd:The Photosensitive resin composition, and photoresist film and resist pattern forming method using the same
JP2008146045A (en) * 2006-11-15 2008-06-26 Taiyo Ink Mfg Ltd Method for forming solder resist film and photosensitive composition
TW201035676A (en) * 2008-11-18 2010-10-01 Sumitomo Chemical Co Photosensitive resin composition and display device
WO2010126006A1 (en) * 2009-04-30 2010-11-04 日立化成工業株式会社 Photosensitive resin composition, photosensitive element utilizing the composition, method for formation of resist pattern, and process for production of printed circuit board
WO2012101908A1 (en) * 2011-01-25 2012-08-02 日立化成工業株式会社 Photosensitive resin composition, photosensitive element, method for producing resist pattern, and method for manufacturing printed wiring board

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