TWI675609B - Method for distributed microwave phase control - Google Patents

Method for distributed microwave phase control Download PDF

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TWI675609B
TWI675609B TW107147164A TW107147164A TWI675609B TW I675609 B TWI675609 B TW I675609B TW 107147164 A TW107147164 A TW 107147164A TW 107147164 A TW107147164 A TW 107147164A TW I675609 B TWI675609 B TW I675609B
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electric field
phase
field distribution
chamber
microwave
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TW107147164A
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TW202025850A (en
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黃家靖
蔡岳霖
陳叡宏
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財團法人工業技術研究院
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Abstract

一種分布式微波相位控制方法,係包括:令複數相控功率模組透過各輸入埠將微波輸入至腔室中,進而使腔室中的微波呈現第一電場分布;以及令各相控功率模組調整各輸入埠輸入至腔室之微波的相位,使得腔室中的微波因相位的變化產生與第一電場分布呈現互補的第二電場分布。A distributed microwave phase control method includes: allowing a plurality of phase-controlled power modules to input microwaves into a cavity through each input port, so that the microwaves in the cavity exhibit a first electric field distribution; and each phase-controlled power mode The group adjusts the phase of the microwave input from each input port to the chamber, so that the microwave in the chamber generates a second electric field distribution complementary to the first electric field distribution due to the change in phase.

Description

分布式微波相位控制方法Distributed microwave phase control method

本發明係有關微波控制技術,尤指一種分布式微波相位控制方法。The invention relates to a microwave control technology, in particular to a distributed microwave phase control method.

傳統微波加熱技術是利用磁控管產生微波來對被加熱物進行加熱,然而此種加熱方式之微波的電場強弱分布容易不均勻,使被加熱物位於弱電場區的部分會因吸收強度較弱的電場而產生無顯著加熱的低受熱區,而被加熱物位於強電場區的部分會因吸收強度較強的電場而產生顯著加熱的高受熱區,因此造成被加熱物經過微波加熱後形成加熱不均勻的狀況。The traditional microwave heating technology uses the magnetron to generate microwaves to heat the object to be heated. However, the electric field strength distribution of the microwaves in this heating method tends to be uneven, making the part of the object to be heated located in the weak electric field area weak in absorption intensity Low heating area without significant heating, and the part of the object to be heated located in the strong electric field area will generate significantly heated high heating area due to strong absorption of the electric field, so the heated object will be heated by microwave heating Uneven condition.

此外,為提高該被加熱物於該低受熱區之溫度,一般可透過機械式轉盤或微波攪拌器來改變該電場強弱分布,但其效果仍然有限。In addition, in order to increase the temperature of the object to be heated in the low-heat-receiving area, the intensity distribution of the electric field can generally be changed through a mechanical turntable or a microwave stirrer, but its effect is still limited.

因此,如何有效進行區域性加熱或者整體性的均勻加熱,實為目前業界所亟待解決的課題之一。Therefore, how to effectively perform regional heating or overall uniform heating is really one of the issues to be urgently addressed in the industry.

本發明係提供一種分布式微波相位控制方法,係包括:提供內部具有一腔室之殼體,且於殼體上形成有複數個連通腔室之輸入埠;令複數個相控功率模組透過各輸入埠將微波輸入至腔室中,以使腔室中的微波呈現第一電場分布;以及令各相控功率模組調整各輸入埠輸入至腔室之微波的相位,使得腔室中的微波因相位的變化產生與第一電場分布呈現互補的第二電場分布。The invention provides a distributed microwave phase control method, which includes: providing a housing with a cavity inside, and forming a plurality of input ports communicating with the cavity on the housing; and allowing a plurality of phased power modules to pass through. Each input port inputs microwaves into the chamber, so that the microwaves in the chamber exhibit a first electric field distribution; and each phase-controlled power module adjusts the phase of the microwaves input into the chamber by each input port, so that the Due to the change in phase, the microwave generates a second electric field distribution that is complementary to the first electric field distribution.

由上述可得知,本發明利用在殼體上形成分布式的輸入埠陣列,再透過相控功率模組提供不同相位的微波給輸入埠輸入至腔室,可主動式的控制腔室內之微波於不同階段的電場強弱分布的轉換,並使得腔室內的微波於不同階段的電場彼此呈現互補式電場分布,使腔室內的被加熱物從不同階段的互補式的電場分布中得到更加均勻的受熱,進而改善傳統加熱器加熱不均勻的現象。It can be known from the above that the present invention utilizes a distributed input port array formed on the casing, and then provides microwaves with different phases to the input port through the phased power module to input the input port to the chamber, and can actively control the microwave in the chamber. The transformation of the electric field strength distribution at different stages, and the microwave electric field in the chamber at different stages present complementary electric field distributions to each other, so that the heated objects in the chamber get more uniform heating from the complementary electric field distributions at different stages. , Thereby improving the phenomenon of uneven heating of traditional heaters.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。The following describes the implementation of the present invention through specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「第一」、「第二」及「第三」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當視為本發明可實施之範疇。It should be noted that the structures, proportions, sizes, etc. shown in the drawings in this specification are only used to match the content disclosed in the specification for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the present invention. The limited conditions are not technically significant. Any modification of the structure, change of the proportional relationship, or adjustment of the size should still fall within the scope of this invention without affecting the effects and goals that can be achieved by the present invention. The technical content disclosed by the invention can be covered. At the same time, the terms such as "first", "second" and "third" used in this specification are only for the convenience of description, and are not intended to limit the scope of the invention and their relative relationship. Changes or adjustments without substantial changes in technical content shall be deemed to be the scope of the present invention.

請參閱第1圖,係為應用本發明之分布式微波相位控制方法之系統示意圖,該系統係包括:殼體1,內部係具有一腔室5;複數輸入埠(port),係位於殼體1上且連通該腔室;複數相控功率模組2,係連接各該輸入埠,以提供微波至各該輸入埠,使各該輸入埠將該微波輸入至腔室5中;串行外設介面3,係與各該相控功率模組2連接;以及微處理器4,係與串行外設介面3連接,並透過串行外設介面3控制各個相控功率模組2所輸出之微波的功率及相位。Please refer to FIG. 1, which is a schematic diagram of a system to which the distributed microwave phase control method of the present invention is applied. The system includes: a housing 1 having a cavity 5 inside; a plurality of input ports located in the housing. 1 is connected to the chamber; a plurality of phase-controlled power modules 2 are connected to the input ports to provide microwaves to the input ports so that each of the input ports inputs the microwave into the chamber 5; The interface 3 is provided to connect with each of the phase-controlled power modules 2; and the microprocessor 4 is connected to the serial peripheral interface 3 and control the output of each phase-controlled power module 2 through the serial peripheral interface 3 The power and phase of the microwave.

請參閱第2圖,係本發明之分布式微波相位控制方法之示意流程圖,係包括:在步驟S1中,提供內部具有一腔室5的殼體1;在步驟S2中,於殼體1上形成複數連通該腔室5之輸入埠;在步驟S3中,令複數相控功率模組2提供微波至各該輸入埠,以由該輸入埠將該微波輸入至該腔室5中,進而使該腔室5中的微波呈現第一電場分布;以及在步驟S4中,令各該相控功率模組2調整各該輸入埠輸入至該腔室之微波的相位,使得該腔室中的微波因相位的變化產生與該第一電場分布呈現互補的第二電場分布。Please refer to FIG. 2, which is a schematic flowchart of the distributed microwave phase control method of the present invention, which includes: in step S1, providing a housing 1 having a cavity 5 inside; in step S2, providing the housing 1 A plurality of input ports connected to the chamber 5 are formed thereon; in step S3, the plurality of phase-controlled power modules 2 are provided with microwaves to each of the input ports so that the input ports input the microwaves into the chamber 5 and further Make the microwaves in the chamber 5 exhibit a first electric field distribution; and in step S4, make each phase-controlled power module 2 adjust the phase of the microwaves input to the chamber by each of the input ports so that the Due to the change in phase, the microwave generates a second electric field distribution that is complementary to the first electric field distribution.

於一實施例中,殼體1係為矩形、圓柱形或多邊形,但不以此為限。In one embodiment, the casing 1 is rectangular, cylindrical or polygonal, but not limited thereto.

請參閱第3圖,係為在矩形之殼體1上設有複數輸入埠(port)之第一擺設實施例之透視圖,其中,於殼體1設有上下左右彼此對稱的環形陣列之輸入埠port1~port4。Please refer to FIG. 3, which is a perspective view of a first arrangement embodiment of a rectangular housing 1 provided with a plurality of input ports, wherein the housing 1 is provided with an input of a circular array symmetrical to each other up, down, left, and right. Ports port1 ~ port4.

於一實施例中,殼體1之腔室5的設計尺寸係為:腔室5之Z軸長度係為整數倍λ(微波波長),而腔室5之X及Y軸的長度係為整數倍λ或該整數倍λ再加上0.5λ,但不以此為限。In an embodiment, the design dimension of the cavity 5 of the housing 1 is: the length of the Z axis of the cavity 5 is an integer multiple of λ (microwave wavelength), and the length of the X and Y axes of the cavity 5 is an integer Double λ or the integer multiple λ plus 0.5λ, but not limited to this.

請參閱第4圖,係為本發明於第3圖之殼體1執行分布式微波相位控制方法中的步驟S3與步驟S4的電場分布圖,其中,1[1,0]係指port1[峰值功率大小為1瓦,微波之相位為0度],其他依此類推,另該殼體1的腔室5之尺寸依照該腔室5大小的設計之規則可分四種,第一種為1.5λ*1.5λ*1λ之倍數,第二種為2λ*2λ*1λ之倍數,第三種為2.5λ*2.5λ*1λ之倍數,第四種為3λ*3λ*1λ之倍數。Please refer to FIG. 4, which are electric field distribution diagrams of steps S3 and S4 in the distributed microwave phase control method of the casing 1 of FIG. 3 according to the present invention, where 1 [1,0] refers to port1 [peak The power is 1 watt, the phase of the microwave is 0 degrees], and so on, and the size of the chamber 5 of the housing 1 can be divided into four according to the design rules of the size of the chamber 5. The first is 1.5 Multiples of λ * 1.5λ * 1λ, the second is a multiple of 2λ * 2λ * 1λ, the third is a multiple of 2.5λ * 2.5λ * 1λ, and the fourth is a multiple of 3λ * 3λ * 1λ.

由第4圖可知電場分布圖依不同灰階色區分不同的電場強度,其中,灰階色由淺至深代表電場強度由低至高,而第一電場分布與第二電場分布互補係指第二電場分布圖與第一電場分布圖疊在一起時,第一電場分布圖中(例如中間區域)的弱電場區係重疊於第二電場分布圖中(例如中間區域)的強電場區,或是第二電場分布圖中(例如中間區域)的弱電場區重疊於第一電場分布圖中(例如中間區域)的強電場區。It can be seen from Figure 4 that the electric field distribution diagram distinguishes different electric field strengths according to different gray scale colors. Among them, the gray scale colors represent light field strength from low to high, and the first electric field distribution and the second electric field distribution are complementary. When the electric field distribution map is superimposed with the first electric field distribution map, the weak electric field area in the first electric field distribution map (for example, the middle area) overlaps the strong electric field area in the second electric field distribution map (for example, the middle area), or The weak electric field region in the second electric field distribution map (for example, the middle region) overlaps the strong electric field region in the first electric field distribution map (for example, the middle region).

所述步驟S3係令各相控功率模組2提供同相位的微波至各輸入埠port1~port4,使各輸入埠port1~port4將同相位的微波輸入至腔室5中,進而使腔室5中的微波呈現第一電場分布,其中,第一電場分布係呈駐波形式。The step S3 is to enable each phase-controlled power module 2 to provide microwaves of the same phase to each of the input ports port1 to port4, so that each of the input ports port1 to port4 can input microwaves of the same phase to the chamber 5 and thus the chamber 5 The microwaves present a first electric field distribution, wherein the first electric field distribution is in the form of a standing wave.

於一實施例中,所述步驟S4係令各相控功率模組2將相對稱的輸入埠所輸入至腔室之微波調整成互為相反相位(如相對稱的port1及port3輸入互為0或180度的相反相位之微波),使得腔室中的微波因相位的變化產生與第一電場分布呈現互補的第二電場分布,其中,第二電場分布係為駐波形式。In an embodiment, the step S4 causes the phase-controlled power modules 2 to adjust the microwaves input from the symmetrical input ports to the chambers to have opposite phases to each other (for example, the inputs of the port1 and port3 are 0 to each other). Or 180-degree microwaves with opposite phases), so that the microwave in the chamber produces a second electric field distribution that is complementary to the first electric field distribution due to the phase change, wherein the second electric field distribution is in the form of a standing wave.

於一實施例中,所述步驟S4係令各相控功率模組2將相鄰的輸入埠所輸入至腔室之微波調整成互為相反相位(如相鄰的port1及port2輸入互為0或180度的相反相位之微波),使得腔室中的微波因相位的變化產生與第一電場分布呈現互補的第二電場分布,其中,第二電場分布係為駐波形式。In an embodiment, the step S4 is to cause each phase-controlled power module 2 to adjust the microwaves input to the chamber by adjacent input ports to have opposite phases to each other (for example, the adjacent port1 and port2 inputs are 0 to each other). Or 180-degree microwaves with opposite phases), so that the microwave in the chamber produces a second electric field distribution that is complementary to the first electric field distribution due to the phase change, wherein the second electric field distribution is in the form of a standing wave.

於一實施例中,所述步驟S4係令各相控功率模組2將沿殼體1之各方位角度之方向上的各輸入埠(如port1~port4)之微波,依序調整為具有一相位差,使得腔室中的微波因相位的變化產生相位匹配波形式的第二電場分布。In an embodiment, the step S4 is to cause the phase-controlled power modules 2 to sequentially adjust the microwaves of the input ports (such as port1 to port4) in the direction of the angle of the various positions of the housing 1 to sequentially The phase difference causes the microwave in the chamber to generate a second electric field distribution in the form of a phase-matched wave due to a change in phase.

請參考第5圖,係為第4圖的腔室5大小為2λ*2λ*1λ時的輸入埠port1與輸入埠port2之間的電場曲線圖。Please refer to FIG. 5, which is a graph of the electric field between the input port port1 and the input port port2 when the size of the chamber 5 in FIG. 4 is 2λ * 2λ * 1λ.

第一電場曲線51代表輸入埠port1~ port4之微波的相位為同相位時,位於輸入埠port1與輸入埠port2之間的駐波形式的電場曲線,第二電場曲線52代表輸入埠port1~port4之相鄰輸入埠為相反相位時,位於輸入埠port1與輸入埠port2之間的駐波形式的電場曲線,其中,電場曲線的節點A代表弱電場區,位於強電場區中的波峰B或波谷C係為強電場區中的較高電場值,相對的,強電場區越接近節點A的電場值越小。The first electric field curve 51 represents the electric field curve in the form of a standing wave between the input port port1 and the input port port2 when the phases of the microwaves of the input ports port1 to port4 are in the same phase. The second electric field curve 52 represents the input port port1 to port4. An electric field curve in the form of a standing wave between input ports port1 and input port2 when adjacent input ports are in opposite phases, where node A of the electric field curve represents a weak electric field region, and peak B or trough C in a strong electric field region It is a higher electric field value in the strong electric field region. In contrast, the closer the strong electric field region is to the node A, the smaller the electric field value is.

由第5圖可知第一電場曲線51的節點A的位置在第二電場曲線52時是位於強電場區,而第二電場曲線52的節點A的位置在第一電場曲線51時是位於強電場區,換言之,電場曲線的互補之定義即為第一電場曲線51與第二電場曲線52彼此重疊時,第一電場曲線51之節點A的位置位於第二電場曲線52的強電場區,或是第二電場曲線52之節點A的位置位於第一電場曲線51的強電場區。需理解的是,由於駐波為原地震盪,故駐波的節點位置不會隨時間改變,其次,由於輸入埠port為微波饋入處,因此,駐波形式的第一電場曲線51與第二電場曲線52位於輸入埠port1及輸入埠port2邊界為最高電場值的波峰B或波谷C。此外,由第5圖可見,第一電場曲線51及第二電場曲線52在輸入埠port1及輸入埠port2之間的中間區域呈現大致上互補的分布。It can be seen from FIG. 5 that the position of the node A of the first electric field curve 51 is located in the strong electric field region when the second electric field curve 52 is located, and the position of the node A of the second electric field curve 52 is located in the strong electric field when the first electric field curve 51 is located In other words, the complementary definition of the electric field curve is that when the first electric field curve 51 and the second electric field curve 52 overlap each other, the position of the node A of the first electric field curve 51 is located in the strong electric field area of the second electric field curve 52, or The position of the node A of the second electric field curve 52 is located in the strong electric field region of the first electric field curve 51. It should be understood that, because the standing wave is the original oscillating, the node position of the standing wave will not change with time. Secondly, because the input port port is the microwave feeding point, the first electric field curve 51 and the first standing wave form The two electric field curves 52 are located at the peak B or the valley C of the highest electric field value at the boundary between the input port port1 and the input port port2. In addition, it can be seen from FIG. 5 that the first electric field curve 51 and the second electric field curve 52 present a substantially complementary distribution in the middle region between the input port port1 and the input port port2.

請參考第6圖,係本發明之相位匹配波之示意圖,第6圖中的殼體1係為第3圖之殼體1的平面圖,假設輸入埠port1所提供的微波之相位為0度、輸入埠port2所提供的微波之相位為90度、輸入埠port3所提供的微波之相位為180度、輸入埠port4所提供的微波之相位為270度,細箭頭所示的駐波61形式之微波會由相位低的輸入埠往相位高的輸入埠傳輸,且輸入埠port1~port4係以環形陣列設置在殼體1上,因此,如細箭頭所標示的駐波61形式之微波會從輸入埠port1至輸入埠port4產生循環,形成粗箭頭所示的相位匹配波62,由於相位匹配波62會在循環的路徑進行移動,因此,相位匹配波62的節點位置會隨時間改變。Please refer to Fig. 6, which is a schematic diagram of the phase matching wave of the present invention. The casing 1 in Fig. 6 is a plan view of the casing 1 in Fig. 3. It is assumed that the phase of the microwave provided by the input port port1 is 0 degrees, The phase of the microwave provided by input port port2 is 90 degrees, the phase of the microwave provided by input port port3 is 180 degrees, the phase of the microwave provided by input port port4 is 270 degrees, and the microwave in the form of a standing wave 61 shown by a thin arrow It will be transmitted from the input port with a low phase to the input port with a high phase, and the input ports port1 to port4 are arranged on the casing 1 in a circular array. Therefore, a microwave in the form of a standing wave 61 indicated by a thin arrow will be transmitted from the input port Port1 to input port port4 generate a loop to form a phase-matched wave 62 shown by a thick arrow. Since the phase-matched wave 62 moves on a circular path, the node position of the phase-matched wave 62 will change with time.

請參閱第7圖,係本發明第4圖之相位匹配波於第3圖之腔室5中循環的第二電場分布圖,第7圖中的相位匹配波的四個態樣係每隔45度呈現相位匹配波在腔室5中的循環,其中,相位匹配波在第一態樣時,相位匹配波位於輸入埠port1~ port4的相位分別為0、90、180及270度,相位匹配波在第二態樣時,相位匹配波位於輸入埠port1~ port4的相位分別為45、135、225及315度,相位匹配波在第三態樣時,相位匹配波位於輸入埠port1~ port4的相位分別為90、180、270及0度,相位匹配波在第四態樣時,相位匹配波位於輸入埠port1~ port4的相位分別為135、225、315及45度。Please refer to FIG. 7, which is a second electric field distribution diagram of the phase matching wave of FIG. 4 circulating in the chamber 5 of FIG. 3 according to the present invention. The four states of the phase matching wave in FIG. The phase matches the cycle of the phase-matching wave in the chamber 5. When the phase-matching wave is in the first state, the phase-matching wave is located at the input ports port1 to port4 and the phases are 0, 90, 180, and 270 degrees, respectively. In the second aspect, the phases of the phase-matching waves at input ports port1 to port4 are 45, 135, 225, and 315 degrees, respectively. When the phase-matching wave is in the third aspect, the phase-matching waves are at the phase of input ports port1 to port4. 90, 180, 270, and 0 degrees, respectively. When the phase matching wave is in the fourth state, the phases of the phase matching wave at the input ports port1 to port4 are 135, 225, 315, and 45 degrees, respectively.

從第7圖可知相位匹配波在腔室5中循環的四個態樣之第二電場分布圖亦與第4圖的第一電場分布圖產生的能量大致上呈現互補。It can be seen from FIG. 7 that the second electric field distribution diagram of the four aspects of the phase matching wave circulating in the chamber 5 is also substantially complementary to the energy generated by the first electric field distribution diagram of FIG. 4.

於一實施例中,相位匹配波若欲在腔室5內有更均勻的分布,也就是說其電場分布具有最佳幾何對稱的特性,其輸入埠之微波的相位差之設計方式為:沿腔室方位角度方向一圈有N個輸入埠,若相鄰輸入埠之間相位差相同,則相位差約為(360/N)度或其倍數,若相位差不同,則輸入埠兩兩相位差相加之角度和約為360度或其倍數。In an embodiment, if the phase-matched wave is to be more uniformly distributed in the chamber 5, that is, its electric field distribution has the best geometric symmetry characteristic, and the phase difference of the microwave input port is designed as follows: There are N input ports in a circle in the azimuth direction of the chamber. If the phase difference between adjacent input ports is the same, the phase difference is about (360 / N) degrees or a multiple thereof. If the phase difference is different, the input ports have two phases. The sum of the angles of the differences is about 360 degrees or a multiple thereof.

以在第3圖之腔室5中設計更均勻分布的相位匹配波為例,由於第3圖之沿腔室5方位角度方向一圈有4個輸入埠,每個輸入埠之間的相位差之較佳設計為360度/4=90度,4個輸入埠的微波之相位分別為0、90、180及270度,由此可知,形成第4圖之該相位匹配波的輸入埠port1~port4之間的相位差即為較佳的設計。Taking a more uniformly distributed phase matching wave in chamber 5 in Fig. 3 as an example, since there are 4 input ports in a circle along the azimuth direction of chamber 5 in Fig. 3, the phase difference between each input port The preferred design is 360 degrees / 4 = 90 degrees, and the phases of the microwaves of the four input ports are 0, 90, 180, and 270 degrees, respectively. From this, it can be seen that the input port port1 of the phase-matching wave in Figure 4 is formed. The phase difference between port4 is a better design.

於一實施例中,相位匹配波不限於由第3圖所示的上下左右彼此對稱的環形陣列之輸入埠port1~port4所提供,亦可由非對稱的環形陣列之輸入埠所提供,例如於第3圖所示的殼體1上形成沿腔室5繞一圈有6個非對稱的環形陣列之輸入埠,其每個輸入埠之間的相位差之較佳設計為360度/6=60度,6個輸入埠的微波之相位分別為0、60、120、180、240及300度。In an embodiment, the phase-matching wave is not limited to the input ports port1 to port4 of the circular array symmetrically arranged up and down, left and right, as shown in FIG. 3, and can also be provided by the input ports of the asymmetric circular array, such as The housing 1 shown in FIG. 3 is formed with 6 asymmetrical annular array input ports around the cavity 5 and a preferred design of the phase difference between each input port is 360 degrees / 6 = 60. Degrees, the phases of the microwaves of the six input ports are 0, 60, 120, 180, 240, and 300 degrees, respectively.

請參閱第8圖,係於第3圖所示的腔室5中放置一圓形薄片的被加熱物6。Referring to FIG. 8, a circular thin sheet of the object 6 is placed in the chamber 5 shown in FIG. 3.

請同時配合參閱第9圖,係為本發明於第8圖之被加熱物6進行三種加熱方式之溫度分布圖,其中,圓形粗線代表被加熱物6,且該溫度分布圖依不同灰階色區分不同的溫度,其中,該灰階色由淺至深代表溫度由低至高。Please refer to FIG. 9 at the same time, which is a temperature distribution diagram of three heating methods of the heated object 6 in FIG. 8 according to the present invention. Among them, a thick circular line represents the heated object 6, and the temperature distribution diagram varies according to different gray levels. The gradation color distinguishes different temperatures, where the gray-scale color from light to dark represents the temperature from low to high.

第一種加熱方式:進行步驟S3,令各相控功率模組2將各輸入埠port1~port4輸入至腔室5中的微波調整為同相位且功率100W,並持續300秒輸入至腔室5對被加熱物6進行加熱。由第9圖中可知被加熱物6被第一種加熱方式持續300秒加熱後的溫度分布高低相差74.4度。The first heating method: Step S3 is performed, and each phase-controlled power module 2 adjusts the microwaves inputted from the input ports port1 to port4 into the chamber 5 to the same phase and the power of 100W, and is input to the chamber 5 for 300 seconds. The object to be heated 6 is heated. It can be seen from FIG. 9 that the temperature distribution of the heated object 6 after being heated by the first heating method for 300 seconds is 74.4 degrees.

第二種加熱方式:進行步驟S4,令各相控功率模組2將各輸入埠port1~port4輸入至腔室5中的微波調整為相位匹配波且功率100W,並持續300秒輸入至腔室5對被加熱物6進行加熱。由第9圖中可知被加熱物6被第二種加熱方式持續300秒加熱後的溫度分布高低相差47.4度。The second heating method: Step S4 is performed, and each phase-controlled power module 2 adjusts the microwave input from each of the input ports port1 to port4 into the chamber 5 to a phase-matched wave with a power of 100W and is input to the chamber for 300 seconds. 5 The object to be heated 6 is heated. It can be seen from FIG. 9 that the temperature distribution of the heated object 6 after being heated by the second heating method for 300 seconds differs by 47.4 degrees.

第三種加熱方式:進行第一種加熱方式持續150秒及第二種加熱方式持續150秒,由第9圖中可知採用第一種加熱方式及第二種加熱方式的配合應用對被加熱物6加熱後的溫度分布高低相差只34.4度,由此可知,步驟S3及步驟S4的配合應用可改善單獨進行步驟S3或步驟S4後之被加熱物6的溫度分布差異甚大的問題,換言之,在固定的加熱時間內採用步驟S3及步驟S4的配合應用可大大降低被加熱物6的溫差。The third heating method: the first heating method lasts for 150 seconds and the second heating method lasts for 150 seconds. From Figure 9, it can be seen that the combined application of the first heating method and the second heating method is applied to the object to be heated. 6 The difference in the temperature distribution between heating and heating is only 34.4 degrees. It can be seen that the combined application of step S3 and step S4 can improve the problem that the temperature distribution of the heated object 6 is greatly different after step S3 or step S4. In other words, in The combination of steps S3 and S4 in a fixed heating time can greatly reduce the temperature difference of the object 6 to be heated.

請參閱第10圖,係為在矩形之殼體1上設有複數輸入埠之第二實施例之透視圖,其中,於矩形殼體1的六個面上形成彼此對稱的三維陣列之輸入埠port1~port6,且於腔室5中放置一球形的被加熱物6。Please refer to FIG. 10, which is a perspective view of a second embodiment in which a plurality of input ports are provided on a rectangular housing 1, in which three-dimensional arrays of input ports symmetrical to each other are formed on six faces of the rectangular housing 1. port1 ~ port6, and a spherical object 6 is placed in the chamber 5.

請同時配合參閱第11圖,係為本發明於第10圖之被加熱物6進行三組方式加熱之溫度分布圖,其中,圓形粗線代表被加熱物6,且該溫度分布圖依不同灰階色區分不同的溫度,其中,灰階色由淺至深代表溫度由低至高。Please also refer to FIG. 11 at the same time, which is a temperature distribution diagram of the heating object 6 heated in three groups in FIG. 10 according to the present invention, wherein the thick circular line represents the heating object 6, and the temperature distribution diagram varies according to Grayscale colors distinguish between different temperatures, where grayscale colors from light to dark represent temperatures from low to high.

第一組加熱方式:進行步驟S3,其中,令各相控功率模組2對各輸入埠port1~port6輸入至腔室5中的微波調整為同相位且功率100W,並持續300秒輸入至腔室5對被加熱物6進行加熱。由第11圖中可知被加熱物6被第一組加熱方式持續加熱300秒後的溫度分布高低相差46.4度。The first group of heating methods: Step S3 is performed, in which each phase-controlled power module 2 adjusts the microwaves input into the chamber 5 from the input ports port1 to port6 to the same phase and the power is 100W, and is input to the chamber for 300 seconds. The chamber 5 heats the object 6 to be heated. It can be seen from FIG. 11 that the temperature distribution of the heated object 6 after being continuously heated by the first heating method for 300 seconds is 46.4 degrees.

第二組加熱方式:進行步驟S4,其中,先將輸入埠中的至少一組對稱的輸入埠port5及port6接至匹配端(於一實施例中,匹配端係可為阻抗,但不以此為限),以令至少一組對稱的輸入埠port5及port6不提供微波輸入至腔室5,接著令各相控功率模組2將相鄰的輸入埠port1~port4輸入至腔室之微波調整為彼此互為相反相位且功率100W,並持續300秒輸入至腔室5對被加熱物6進行加熱。由第11圖中可知被加熱物6被第二組加熱方式持續加熱300秒後的溫度分布高低相差25.3度。The second group of heating methods: Step S4, in which at least one group of symmetrical input ports port5 and port6 in the input port are first connected to the matching terminal (in one embodiment, the matching terminal system may be an impedance, but this is not the case) To limit), so that at least one set of symmetrical input ports port5 and port6 does not provide microwave input to the chamber 5, and then each phased power module 2 makes adjacent input ports port1 ~ port4 input to the microwave adjustment of the chamber The objects to be heated 6 are heated in the opposite phase to each other with a power of 100 W and input to the chamber 5 for 300 seconds. It can be seen from FIG. 11 that the temperature distribution of the heated object 6 after being continuously heated by the second heating method for 300 seconds differs by 25.3 degrees.

第三組加熱方式:進行第一組加熱方式持續100秒及第二組加熱方式持續200秒,由第11圖可知採用第一組加熱方式及第二組加熱方式的配合應用對被加熱物6加熱後的溫度分布高低相差僅17.2度,由此可知,步驟S3及步驟S4的配合應用可改善單獨進行步驟S3或步驟S4後之被加熱物6的溫度分布差異甚大的問題,換言之,在固定的加熱時間內採用步驟S3及步驟S4的配合應用可大大降低被加熱物6的溫差。The third group of heating methods: the first group of heating methods lasts for 100 seconds and the second group of heating methods lasts for 200 seconds. From Figure 11, it can be seen that the first group of heating methods and the second group of heating methods are used in conjunction with the heated object 6 The difference in the temperature distribution after heating is only 17.2 degrees. It can be seen that the combined application of step S3 and step S4 can improve the problem that the temperature distribution of the heated object 6 after step S3 or step S4 is performed separately is very different. In other words, the fixed Using the combined application of steps S3 and S4 during the heating time can greatly reduce the temperature difference of the object 6 to be heated.

請參閱第12圖,係為在矩形之殼體1上設有複數輸入埠(port)之第三實施例之透視圖,其中,於殼體1上形成左右彼此對稱的線陣列之輸入埠port1~port2,且於腔室5之中心底部附有一載台7及於載台7上的被加熱物6。Please refer to FIG. 12, which is a perspective view of a third embodiment in which a plurality of input ports are provided on a rectangular casing 1, wherein the input ports port1 of a line array symmetrical to each other are formed on the casing 1. ~ port2, and a carrier 7 and a heated object 6 on the carrier 7 are attached to the bottom of the center of the chamber 5.

請同時配合參閱第13圖,係本發明之第12圖之輸入埠port1~port2在調整微波之相位後,腔室的剖視電場分布圖,第13圖所示的電場分布圖依不同灰階色區分不同的電場強度,該灰階色由淺至深代表電場強度由低至高,而虛線圓圈代表位於被加熱物6表面的強電場區,由第13圖可知位於被加熱物6表面的強電場區的位置會隨著輸入埠port1~port2之微波之相位的調整而產生位移,因此,透過微波相位於不同階段的調整,可使得腔室5內的微波於不同階段的電場產生彼此呈現互補式電場分布,以使被加熱物6從該不同階段的互補式電場分布中得到更加均勻的受熱,換言之,本發明之分布式微波相位控制方法亦可於步驟S3中改變各輸入埠之微波的相位,只要步驟S4的腔室5的電場分布圖與步驟S3的腔室5的電場分布圖呈現互補形式即為本發明的精神所在,再者,本發明之分布式微波相位控制方法所適用的複數輸入埠於殼體1上的擺設方式亦不限於上述幾種,例如複數輸入埠於殼體1上的擺設方式亦可為非對稱式的三維陣列或環形陣列,但不以此為限。Please refer to FIG. 13 at the same time, which is the sectional electric field distribution diagram of the chamber after adjusting the phase of the microwave of the input ports port1 to port2 of the twelfth diagram of the present invention. The electric field distribution diagram shown in FIG. 13 is according to different gray levels. The gray color indicates different electric field strengths. The gray scale color represents light field strength from low to high, and the dotted circle represents the strong electric field area located on the surface of the heated object 6. According to Fig. 13, it can be seen that the strong electric field strength is located on the surface of the heated object 6. The position of the electric field area will be shifted with the adjustment of the microwave phase of the input ports port1 ~ port2. Therefore, the adjustment of the microwave phase at different stages can make the microwaves in the chamber 5 generate complementary electric fields at different stages. Electric field distribution, so that the heated object 6 gets more uniform heating from the complementary electric field distribution at different stages. In other words, the distributed microwave phase control method of the present invention can also change the microwave of each input port in step S3. Phase, as long as the electric field distribution diagram of the chamber 5 in step S4 and the electric field distribution diagram of the chamber 5 in step S3 present complementary forms, this is the spirit of the present invention. Furthermore, the distribution of the present invention The arrangement of the plurality of input ports on the casing 1 to which the microwave phase control method is applicable is not limited to the above. For example, the arrangement of the plurality of input ports on the casing 1 may also be an asymmetric three-dimensional array or a ring array. But not limited to this.

請參閱第14圖,係本發明應用於圓柱形之殼體1之示意圖,其中,圓柱形之殼體1上可分層設置複數輸入埠之陣列,△Φ1~△Φ4表示為單層的各輸入埠所提供之微波的相位,△θ1與△θ2代表各層之間的微波之相位差,而由輸入埠提供之微波所產生的電場分布8中,S所指的圈代表強電場區而W所指的圈代表弱電場區,透過本發明之分布式微波相位控制方法即可對該強電場區與該弱電場區的分布進行切換,進而使該電場分布中的被加熱物能夠更加均勻受熱。Please refer to FIG. 14, which is a schematic diagram of the present invention applied to a cylindrical casing 1, in which an array of a plurality of input ports can be arranged in layers on the cylindrical casing 1, and △ Φ1 to △ Φ4 are shown as individual layers. The phase of the microwave provided by the input port, Δθ1 and Δθ2 represent the phase difference of the microwaves between the layers, and in the electric field distribution 8 generated by the microwave provided by the input port, the circle indicated by S represents the strong electric field region and W The indicated circle represents a weak electric field region. Through the distributed microwave phase control method of the present invention, the distribution of the strong electric field region and the weak electric field region can be switched, so that the object to be heated in the electric field distribution can be heated more uniformly. .

由上述可得知,本發明利用在殼體上形成分布式的輸入埠陣列,再透過相控功率模組提供不同相位的微波由輸入埠輸入腔室,可主動式的控制腔室內之微波於不同階段的電場強弱分布之轉換,並使得腔室內的微波於不同階段的電場彼此呈現互補式電場分布,以使腔室內的被加熱物從不同階段的互補式電場分布中得到更加均勻的受熱,進而改善傳統加熱器加熱不均勻的現象。As can be known from the above, the present invention utilizes a distributed input port array formed on the casing, and then provides microwaves of different phases through the phase-controlled power module to the input port to enter the chamber, and the microwave in the chamber can be actively controlled. The transformation of the electric field strength distribution at different stages, and the microwave electric field in the chamber at different stages present complementary electric field distributions to each other, so that the heated objects in the chamber can be heated more uniformly from the complementary electric field distributions at different stages. Furthermore, the phenomenon of uneven heating of the traditional heater is improved.

上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。The above embodiments are used to exemplify the principle of the present invention and its effects, but not to limit the present invention. Anyone skilled in the art can modify the above embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of patent application described later.

1‧‧‧殼體1‧‧‧shell

2‧‧‧相控功率模組 2‧‧‧phase-controlled power module

3‧‧‧串行外設介面 3‧‧‧Serial Peripheral Interface

4‧‧‧微處理器 4‧‧‧ Microprocessor

5‧‧‧腔室 5‧‧‧ chamber

6‧‧‧被加熱物 6‧‧‧ Object to be heated

7‧‧‧載台 7‧‧‧ carrier

8‧‧‧電場分布 8‧‧‧ Electric field distribution

51‧‧‧第一電場曲線 51‧‧‧First electric field curve

52‧‧‧第二電場曲線 52‧‧‧second electric field curve

61‧‧‧駐波 61‧‧‧ standing wave

62‧‧‧相位匹配波 62‧‧‧phase matching wave

A‧‧‧節點 A‧‧‧node

B‧‧‧波峰 B‧‧‧ crest

C‧‧‧波谷 C‧‧‧Po Valley

Port‧‧‧輸入埠 Port‧‧‧Input port

S1~S4‧‧‧步驟 Steps S1 ~ S4‧‧‧‧

第1圖為應用本發明之分布式微波相位控制方法之系統示意圖;FIG. 1 is a schematic diagram of a system to which the distributed microwave phase control method of the present invention is applied;

第2圖為本發明之分布式微波相位控制方法之示意流程圖;FIG. 2 is a schematic flowchart of a distributed microwave phase control method according to the present invention;

第3圖為本發明之輸入埠於矩形之殼體上之第一實施例之透視圖;Figure 3 is a perspective view of a first embodiment of an input port of the present invention on a rectangular casing;

第4圖為本發明第3圖之腔室的電場分布圖;Fig. 4 is an electric field distribution diagram of the chamber in Fig. 3 of the present invention;

第5圖為本發明第4圖的腔室大小為2λ*2λ*1λ時的輸入埠port1與輸入埠port2之間的電場曲線圖;FIG. 5 is a graph of the electric field between the input port port1 and the input port port2 when the chamber size of FIG. 4 is 2λ * 2λ * 1λ;

第6圖為本發明之相位匹配波之示意圖;FIG. 6 is a schematic diagram of a phase matching wave of the present invention;

第7圖為本發明第4圖之相位匹配波於循環中的電場分布圖;FIG. 7 is an electric field distribution diagram of a phase matching wave in a cycle according to FIG. 4 of the present invention; FIG.

第8圖為本發明第3圖所示的腔室中放置一圓心薄片的被加熱物之示意圖;FIG. 8 is a schematic view of a heated object placed in a cavity sheet in the cavity shown in FIG. 3 of the present invention; FIG.

第9圖為本發明第8圖之被加熱物之溫度分布圖;Fig. 9 is a temperature distribution diagram of the object to be heated in Fig. 8 of the present invention;

第10圖為本發明之輸入埠於矩形之殼體上之第二實施例之透視圖;FIG. 10 is a perspective view of a second embodiment of an input port of the present invention on a rectangular casing;

第11圖為本發明第10圖之被加熱物之溫度分布圖;FIG. 11 is a temperature distribution diagram of an object to be heated according to FIG. 10 of the present invention; FIG.

第12圖為本發明之輸入埠於矩形之殼體上之第三實施例之透視圖;FIG. 12 is a perspective view of a third embodiment of an input port of the present invention on a rectangular casing;

第13圖為本發明第12圖之腔室之剖視電場分布圖;以及Figure 13 is a sectional electric field distribution diagram of the chamber of Figure 12 of the present invention; and

第14圖為本發明之圓柱形之殼體之示意圖。Fig. 14 is a schematic view of a cylindrical casing according to the present invention.

Claims (13)

一種分布式微波相位控制方法,係包括: 提供內部具有一腔室之殼體,且於該殼體上形成有複數連通該腔室之輸入埠; 令複數相控功率模組透過該輸入埠將微波輸入至該腔室中,以使該腔室中的微波呈現第一電場分布;以及 令各該相控功率模組調整各該輸入埠輸入至該腔室之微波的相位,使得該腔室中的微波因相位的變化產生與該第一電場分布呈現互補的第二電場分布; 其中,與該第一電場分布呈現互補的第二電場分布係指該第二電場分布圖與該第一電場分布圖相疊時,該第一電場分布圖之中間區域中的弱電場區係重疊於該第二電場分布圖之中間區域中的強電場區,或該第二電場分布圖之中間區域中的弱電場區重疊於該第一電場分布圖之中間區域中的強電場區。A distributed microwave phase control method includes: providing a housing with a cavity inside, and a plurality of input ports communicating with the cavity are formed on the housing; and a plurality of phase-controlled power modules are connected to the input port through the input port. The microwave is input into the chamber so that the microwave in the chamber exhibits a first electric field distribution; and each of the phased power modules adjusts the phase of the microwave input from each of the input ports to the chamber so that the chamber Due to the phase change, the microwave in the microwave generates a second electric field distribution that is complementary to the first electric field distribution; wherein the second electric field distribution that is complementary to the first electric field distribution refers to the second electric field distribution map and the first electric field distribution. When the distribution maps overlap, the weak electric field region in the middle region of the first electric field distribution map overlaps the strong electric field region in the middle region of the second electric field distribution map, or the The weak electric field region overlaps the strong electric field region in the middle region of the first electric field distribution map. 如申請專利範圍第1項所述之方法,其中,該殼體上係形成有對稱式陣列的複數輸入埠。The method according to item 1 of the scope of patent application, wherein a plurality of input ports of a symmetrical array are formed on the casing. 如申請專利範圍第2項所述之方法,其中,各該相控功率模組提供同相位的微波至各該輸入埠,使各該輸入埠將該同相位的微波輸入至該腔室中,進而使該腔室中的微波呈現該第一電場分布。The method according to item 2 of the scope of patent application, wherein each of the phase-controlled power modules provides microwaves of the same phase to each of the input ports, so that each of the input ports inputs the microwaves of the same phase into the chamber, Furthermore, the microwaves in the chamber exhibit the first electric field distribution. 如申請專利範圍第3項所述之方法,其中,各該相控功率模組將相對稱的該輸入埠輸入至該腔室之微波調整成互為相反相位,使得該腔室中的微波因相位的變化產生與該第一電場分布呈現互補的第二電場分布,其中,該第一電場分布及該第二電場分布係呈駐波形式,且該駐波的節點位置不隨時間改變。The method according to item 3 of the scope of patent application, wherein each of the phase-controlled power modules adjusts the microwave input from the input port to the chamber into opposite phases to each other, so that the microwave factor in the chamber The change in phase produces a second electric field distribution that is complementary to the first electric field distribution, wherein the first electric field distribution and the second electric field distribution are in the form of standing waves, and the node positions of the standing waves do not change with time. 如申請專利範圍第3項所述之方法,其中,各該相控功率模組將相鄰的該輸入埠輸入至該腔室之微波調整成互為相反相位,使得該腔室中的微波因相位的變化產生與該第一電場分布呈現互補的第二電場分布,其中,該第一電場分布及該第二電場分布係呈駐波形式,且該駐波的節點位置不隨時間改變。The method according to item 3 of the scope of patent application, wherein each of the phase-controlled power modules adjusts the microwave input from the adjacent input port to the chamber to have opposite phases to each other, so that the microwave factor in the chamber is The change in phase produces a second electric field distribution that is complementary to the first electric field distribution, wherein the first electric field distribution and the second electric field distribution are in the form of standing waves, and the node positions of the standing waves do not change with time. 如申請專利範圍第5項所述之方法,其中,在產生該第一電場分布後,將該輸入埠中的至少一組對稱的輸入埠接至匹配端,以令該至少一組對稱的輸入埠不提供微波輸入至該腔室,接著令各該相控功率模組將相鄰的該輸入埠輸入至該腔室之微波調整為彼此互為相反相位。The method according to item 5 of the scope of patent application, wherein after generating the first electric field distribution, at least one group of symmetrical input ports in the input ports is connected to a matching terminal, so that the at least one group of symmetrical inputs The port does not provide microwave input to the chamber, and then each phase-controlled power module adjusts the microwave input from the adjacent input port to the chamber to have opposite phases to each other. 如申請專利範圍第3項所述之方法,其中,各該相控功率模組將沿該殼體之各方位角度之方向上的各該輸入埠之微波,依序調整為具有一相位差,使得該腔室中的微波因相位的變化產生該第二電場分布。The method according to item 3 of the scope of patent application, wherein each of the phase-controlled power modules sequentially adjusts the microwaves of the input ports in the direction of the azimuth angle of the casing to have a phase difference, The microwave in the chamber causes the second electric field distribution due to a change in phase. 如申請專利範圍第7項所述之方法,其中,該相位差的設計方式為沿該殼體之各方位角度之方向上有N個該輸入埠,則該相位差為(360/N)度或其倍數。The method as described in item 7 of the scope of patent application, wherein the phase difference is designed in such a manner that there are N input ports in the direction of the azimuth angle of the housing, and the phase difference is (360 / N) degrees Or its multiples. 如申請專利範圍第7項所述之方法,其中,該第一電場分布係為駐波形式,而該第二電場分布係為相位匹配波形式,其中,該駐波的節點位置不隨時間改變,而該相位匹配波的節點位置隨時間改變。The method according to item 7 of the scope of patent application, wherein the first electric field distribution is in the form of a standing wave, and the second electric field distribution is in the form of a phase-matched wave, wherein the node position of the standing wave does not change with time. , And the node position of the phase matching wave changes with time. 如申請專利範圍第1項所述之方法,其中,該殼體及腔室係為矩形、圓柱形或多邊形。The method according to item 1 of the patent application scope, wherein the shell and the cavity are rectangular, cylindrical or polygonal. 如申請專利範圍第2項所述之方法,其中,該對稱式陣列係為線陣列、三維陣列或環形陣列。The method according to item 2 of the application, wherein the symmetrical array is a line array, a three-dimensional array, or a circular array. 如申請專利範圍第1項所述之方法,其中,該殼體上係形成有非對稱式陣列的複數輸入埠。The method according to item 1 of the scope of patent application, wherein the casing is formed with a plurality of input ports of an asymmetric array. 如申請專利範圍第12項所述之方法,其中,該非對稱式陣列係為三維陣列或環形陣列。The method according to item 12 of the application, wherein the asymmetric array is a three-dimensional array or a circular array.
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