TWI673698B - Touch apparatus - Google Patents

Abstract

A touch device includes a plurality of touch electrodes, a multiplexer circuit, and a sensing driving circuit. According to the positions of the touch electrodes, the touch electrodes are divided into a first touch electrode group and a second touch electrode group. The multiplexer circuit is electrically connected between the touch electrodes and the sensing driving circuit, and includes a plurality of first transistors electrically connected to the first touch electrode group and a plurality of electrically connected to the second touch electrode group. Two second transistors, wherein the sizes of the first transistors are different from the sizes of the second transistors corresponding to the positions of the first touch electrode group and the second touch electrode group.

Description

Touch device

The present invention relates to a touch technology, and more particularly, to a touch device.

In recent years, touch devices combined with display panels as the input interface of electronic devices have begun to replace traditional physical keys. Capacitive touch devices respond to changes in the capacitance of the panel caused by touch objects (such as fingers and stylus). Sensing signals to determine the position of the touch point. However, as the panel size of a touch device increases, the difference between the touch sensing signals provided by the far and near ends of the touch electrodes becomes larger, which affects the accuracy of touch. How to avoid the misjudgment of the touch of the large-sized touch device becomes an important issue.

The invention provides a touch device, which can improve the signal difference between the touch electrodes at the far and near ends, compensate the signals of the touch electrodes at the far ends, and thereby improve the accuracy of touch judgment.

An embodiment of the present invention provides a touch device including a plurality of touch electrodes, a multiplexer circuit, and a sensing driving circuit. According to the positions of the touch electrodes, the touch electrodes are divided into a first touch electrode group and a second touch electrode group. The multiplexer circuit is electrically connected between the touch electrodes and the sensing driving circuit, and includes a plurality of first transistors electrically connected to the first touch electrode group and a plurality of electrically connected to the second touch electrode group. Two second transistors, wherein the sizes of the first transistors are different from the sizes of the second transistors corresponding to the positions of the first touch electrode group and the second touch electrode group.

An embodiment of the present invention provides a touch device including a plurality of touch electrodes, a multiplexer circuit, and a sensing driving circuit. According to the positions of the touch electrodes, the touch electrodes are divided into a first touch electrode group and a second touch electrode group. The multiplexer circuit is electrically connected between the touch electrodes and the sensing driving circuit. The multiplexer circuit includes a plurality of first transistors, a plurality of second transistors, a plurality of third transistors, and a plurality of fourth transistors. Each third transistor and each first transistor share a sensing line to electrically connect the first touch electrode group, and each fourth transistor and each second transistor share another sensing line to electrically Connect the second touch electrode group. The impedance of each first transistor is different from that of the third transistor on the same sensing line, and the impedance of the second transistor is different from that of the fourth transistor also on the other sensing line.

Based on the above, the touch device of the present invention adaptively adjusts the size of the transistor in the multiplexer circuit, so that the transistor used as a switch can provide a compensation resistor for the touch sensing signal. The size of the transistor will vary according to the position of the electrically connected sensing electrodes. Thereby, the accuracy of the touch electrodes at a long distance can be increased, and the performance of the touch device can be improved.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

Please refer to FIG. 1, which is a schematic diagram of a touch device according to an embodiment of the present invention. The touch device 100 includes a touch sensing area 110, a multiplexer circuit 120, and a sensing driving circuit 130. The touch sensing area 110 includes a plurality of touch electrodes PX. These touch electrodes PX are respectively arranged in an array along the first direction (taking the Y direction as an example) and the second direction (taking the X direction as an example). The touch electrodes PX are electrically connected to the sensing driving circuit 130 through the sensing line SL and the multiplexer circuit 120 respectively. The sensing driving circuit 130 performs a touch scan on the touch sensing area 110. When a user uses, for example, a finger, a stylus pen, a touch glove, or another suitable medium to perform a touch operation on the touch electrode PX, a touch sensing signal is generated. The touch sensing signal is transmitted from the touch electrode PX to the sensing driving circuit 130 to further determine the position of the touch point. The present invention does not limit the number of touch electrodes PX or sensing lines SL.

The multiplexer circuit 120 is electrically connected between the touch electrodes PX and the sensing driving circuit 130 and includes a plurality of transistors as switches (not shown in FIG. 1). Each of the transistors of the multiplexer circuit 120 is electrically connected. A touch electrode PX is connected to control the signal transmission of each touch electrode PX. The multiplexer circuit 120 controls the on or off of these transistors according to the driving signal DS provided by the sensing driving circuit 130.

In this embodiment, these touch electrodes PX are divided into at least a first touch electrode group and a second touch electrode group according to their positions, and a plurality of transistors electrically connected to the first touch electrode group A plurality of transistors electrically connected to the second touch electrode group are referred to as a first transistor, and corresponding to the positions of the first touch electrode group and the second electrode group, these first The size of one transistor is different from the size of these second transistors.

Generally speaking, according to the position of the touch electrode PX, the larger the signal transmission distance from the touch electrode PX to the multiplexer circuit 120 or the sensing driving circuit 130, the more the touch sensing signal is due to the capacitance or resistance on the path. The greater the impedance experienced, the lower the strength of the received touch sensing signal. As a result, the difference between the touch sensing signals of the far-end and near-end touch electrodes PX is too large, which increases the difficulty of judging a touch event. In order to compensate for the touch sensing signals, the sizes of the transistors of the multiplexer circuit 120 in this embodiment will not be exactly the same, and the sizes of the transistors will be adjusted according to the distance of the coupled touch electrode PX. . As the channel width of the transistor increases, the impedance of the transistor decreases, and as the channel length of the transistor increases, the impedance of the transistor increases. Through proper transistor size design, the transistor coupled to the remote touch electrode PX can provide smaller impedance, and the transistor coupled to the near touch electrode PX can provide greater impedance, thereby achieving impedance matching. Effect. This will be described in detail in the following examples.

Please refer to FIG. 2, which is a partial schematic diagram of a touch device according to an embodiment of the present invention. The embodiment of FIG. 2 can be regarded as a schematic diagram of some touch electrodes of the touch device 100. Here, for convenience of explanation, only the touch electrodes PX1 to PX9 arranged in the Y direction and the connected transistors T1 to T9 are shown, and the shape of the touch electrodes PX1 to PX9 does not represent the actual shape. Each touch electrode is coupled to a transistor, touch electrode PX1 is coupled to transistor T1, touch electrode PX2 is coupled to transistor T2, touch electrode PX3 is coupled to transistor T3, and so on.

In this embodiment, the touch electrodes PX1 to PX9 are divided into a plurality of touch electrode groups, such as a first touch electrode group TG1, a second touch electrode group TG3, and a third touch electrode group G3. . Specifically, the plurality of touch electrodes PX1 to PX9 may be grouped along the Y direction, or the touch electrodes PX1 to PX9 may be divided into the touch electrodes PX1 to PX9 to the distance from the multiplexer circuit 120 or the sensing driving circuit 130. The multiple touch electrode groups are grouped according to the wiring distance of the touch electrodes PX1 to PX9 to the multiplexer circuit 120 or the wiring distance to the sensing driving circuit 130. In this embodiment, the touch electrodes PX1 to PX3 are divided into a first touch electrode group G1, the touch electrodes PX4 to PX6 are divided into a second touch electrode group G2, and the touch electrodes PX7 to PX9 are divided into a first Three touch electrode group G3. The first touch electrode group G1 is relatively far from the multiplexer circuit 120 or the sensing driving circuit 130, the third touch electrode group G3 is the closest, and the second touch electrode group G2 is centered.

The number of touch electrode groups in this embodiment is required to be at least two, but the number of touch electrodes of each touch electrode group is not limited.

Here, the transistors can be grouped corresponding to the grouping of the touch electrodes to simplify the number of traces of the multiplexer circuit 120 to the sensing driving circuit 130, but the present invention does not limit the grouping of the touch electrodes to be consistent with the grouping of the transistors. .

Accordingly, the transistors T1 to T3 (also referred to as first transistors) coupled to the first touch electrode group TG1 are divided into a first switch group TG1, and the transistors coupled to the second touch electrode group TG2 T4 ~ T6 (also referred to as the second transistor) are divided into the second switch group TG2, and transistors T7 ~ T9 (also referred to as the third transistor) coupled to the third touch electrode group TG3 are divided into the first group Three switch group TG3.

It should be noted that the first transistors corresponding to the touch electrodes of far (first touch electrode group G1), middle (second touch electrode group G2), and near (third touch electrode group G3), The second transistor and the third transistor are not the same size. The channel width of the transistor coupled to the touch electrode PX that is further away from the multiplexer circuit 120 or the sensing driving circuit 130 will be larger or the channel length will be smaller.

For example, when the wiring distance between the first touch electrode group G1 and the multiplexer circuit 120 is greater than the wiring distance between the second touch electrode group G2 and the multiplexer circuit 120, or when the first touch electrode group When the wiring distance between the group G1 and the sensing driving circuit 130 is greater than the wiring distance between the second touch electrode group G2 and the sensing driving circuit 130, the sizes of the first transistors are different from those of the second transistors so that The impedance of the first transistors is lower than the impedance of the second transistors.

In particular, since the touch sensing signals of the far-away first touch electrode group in the touch sensing area 110 will encounter a larger impedance than the touch sensing signals provided by the first touch electrode group, but Since the impedance of the first transistor is smaller than the impedance of the second transistor, the touch sensing signal can be compensated to limit the difference in signal size from the touch electrodes at the far and near ends.

In addition, the sizes of the transistors coupled to the same touch electrode group may be the same or different, that is, the impedances of the transistors may be the same or different, which is not limited in the present invention. For example, the sizes of the transistors T1 to T3 may be the same or different. If the sizes are the same, it means that the impedances of the transistors T1 to T3 are the same.

Please refer to FIG. 3A. FIG. 3A is a schematic diagram of a channel size of a transistor according to an embodiment of the present invention. In the embodiment of FIG. 2, the impedances of the transistors T1 to T3 of the first transistor are equal, the impedances of the transistors T4 to T6 of the second transistor are equal, and the impedances of the transistors T6 to T9 of the third transistor are the same. In the following description, the transistors T1, T4, and T7 represent all the transistors in the first to third transistors, respectively.

FIG. 3A shows a state where the first transistor to the third transistor are side by side. The sizes of the first transistor to the third transistor are all different. Since the first touch electrode group G1 is farther than the second touch electrode group G2, the second touch electrode group G2 is farther than the third touch electrode group G3, and the channel length of the gate of the transistors T1 to T9 Under the same conditions, the channel width W1 of the transistor T1 is designed to be larger than the channel width W2 of the transistor T4 so that the impedance of the transistor T1 is smaller than that of the transistor T4, and the channel width W2 of the transistor T4 is designed to be greater than The channel width W3 of the transistor T7 is such that the impedance of the transistor T4 is smaller than the impedance of the transistor T7.

For the first to third switch groups TG1 to TG3, because the sizes of the transistors are equal, in some embodiments, the transistors of each switch group can be closely arranged on the substrate. For example, a transistor with a channel width of W1 The crystals T1 to T3 can be side by side on the substrate, and the transistors T4 to T6 with a channel width of W2 or the transistors T7 to T9 with a channel width of W3 can also be aligned side by side.

Because the sizes of the transistors of each switch group are different, the transistors of the same size can be closely arranged side by side, but for other transistors of different sizes, the present invention does not require that they be arranged side by side in the same column. In an embodiment, if there are multiple transistors with different channel widths (lengths) but the same channel length (widths), the transistors of the same size can be neatly arranged side by side, and the transistors with different channel widths can be arranged according to The channel length (width) is aligned and arranged along the extending direction of the channel width to form other columns to avoid wasted space due to uneven length.

The present invention does not limit the configuration of the transistor, but in different embodiments, in order to pursue a good substrate area efficiency, the area of the area allowed by the smaller transistor can be occupied by the largest transistor to make the transistor The layout area of the crystal is minimized.

In this embodiment, the scanning method is to turn on at least one transistor of different switch groups at the same time in one period. Transistors T1, T4, and T7 are controlled by driving signal DS1, transistors T2, T5, and T8 are controlled by driving signal DS2, and transistors T3, T6, and T9 are controlled by driving signal DS3. For waveforms of the driving signals DS1 to DS3, refer to FIG. 7A or FIG. 7B. When the driving signal DS is at a high level, the transistor is turned on. When the driving signal DS is at a low level, the transistor is not turned on, but it is not limited.

In the first period T1, the driving signal DS1 turns on the transistors T1, T4, and T7, and other transistors are turned off. At this time, the touch electrodes PX1, PX4, and PX7 can communicate with the sensing driving circuit 130. Transistors T1, T4, and T7 are turned off at other times. In the second period T2, the transistors T2, T5, and T8 are turned on, and the touch electrodes PX2, PX5, and PX8 can communicate with the sensing driving circuit 130. The transistors T2, T5, and T8 are turned off in other periods; in the third period T3, the transistors T3, T6, and T9 are turned on. The touch electrodes PX3, PX6, and PX9 can communicate with the sensing driving circuit 130, but Crystals T3, T6, and T9 are turned off at other times.

That is, in this embodiment, the multiplexer circuit 120 includes at least a first switch group and a second switch group, for example, a first switch group TG1 and a second switch group TG2. The first switch group TG1 includes a plurality of first transistors, such as transistors T1 to T3, and the second switch group TG2 includes a plurality of second transistors, such as transistors T4 to T6. Each of the first transistors and the second transistors are turned on in a plurality of periods, and in each period, the first transistors and at least one of the second transistors are turned on simultaneously. In each period, each of the first touch electrode group G1, the second touch electrode group G2, and the third touch electrode group G3 has one touch electrode that can communicate with the sensing driving circuit 130.

Please refer to FIG. 4, which is a schematic diagram of a touch device according to another embodiment of the present invention. The embodiment of FIG. 4 can also be regarded as a schematic diagram of some touch electrodes of the touch device 100. The embodiment of FIG. 4 is similar to the embodiment of FIG. 2, but the transistors T1 to T9 of the multiplexer circuit 120 are coupled to the touch electrodes PX1 to PX9 in different ways.

Different from the embodiment of FIG. 2, in this embodiment, the grouping method of the first switch group TG1, the second switch group TG2 and the third switch group TG3 is related to the grouping method of the touch electrodes, but is coupled to the same contact. The transistors of the control electrode group are not divided into the same switch group.

Specifically, in this embodiment, the first switch group TG1 includes transistors T1 to T3, the second switch group TG2 includes transistors T4 to T6, and the third switch group TG3 includes transistors T7 to T9, but is coupled to the first A touch electrode group G1 is called a transistor T1, T4, and T7; a second touch electrode group G2 is called a transistor T2, T5, and T8; Connected to the third touch electrode group G3 are the third transistors T3, T6, and T9. Each of the first switch group TG1, the second switch group TG2, and the third switch group TG3 includes at least one of the first transistors, at least one of the second transistors, and at least one of the third transistors. One. Each switch group is coupled to at least one touch electrode in all touch electrode groups.

It should be noted that, in this embodiment, the sizes of the transistors of the same switch group are different, that is, the impedances of the transistors of the same switch group are different. For example, the sizes of the transistors T1 to T3 of the first switch group TG1 are all different. Different, but the size of some transistors of the first switch group TG1, the second switch group TG2 and the third switch group TG3 may be the same or different.

Please refer to FIG. 4 with reference to FIG. 4A again. The channel lengths L of the gates of the transistors T1 to T9 of FIG. 4 are set to be the same, and the channel widths of the transistors of the same switch group are different. The channel width W1 of the first transistor is larger than the channel width W2 of the second transistor, and the channel width W2 of the second transistor is larger than the channel width W3 of the third transistor. In the first switch group TG1, the channel width W1 of the transistor T1 is the largest, the channel width W2 of the transistor T2 is centered, and the channel width W3 of the transistor T3 is smallest. In the second switch group TG2, the channel width W1 of the transistor T4 is the largest, the channel width W2 of the transistor T5 is centered, and the channel width W3 of the transistor T6 is smallest. In the third switch group TG3, the channel width W1 of the transistor T7 is the largest, the channel width W2 of the transistor T8 is centered, and the channel width W3 of the transistor T9 is smallest.

Please refer to FIG. 3 with reference to FIG. 4. FIG. 3B is a schematic diagram of a channel size of a transistor according to another embodiment of the present invention. In the embodiment of FIG. 3B, the channel widths of the gates of the transistors of the same switch group may be the same but the channel lengths are different. Taking the first switch group TG1 as an example, the channel width W of the transistors T1 to T3 is set to be the same, but the channel length L1 of the transistor T1 is smaller than the channel length L2 of the transistor T2 so that the impedance of the transistor T1 is smaller than the impedance of the transistor T2 The channel length L2 of the transistor T2 is smaller than the channel length L3 of the transistor T3 so that the impedance of the transistor T2 is smaller than the impedance of the transistor T3.

Please refer to FIG. 3C with reference to FIG. 4. FIG. 3C is a schematic diagram of a channel size of a transistor according to another embodiment of the present invention. In the embodiment of FIG. 3C, the channel lengths L of the transistors T1 to T9 are set to be the same, and the channel widths of the transistors of the same switch group are different. In the same switch group, the channel width W1 of the first transistor is larger than the channel width W2 of the second transistor, and the channel width W2 of the second transistor is larger than the channel width W3 of the third transistor.

In particular, the embodiment in FIG. 3C is similar to FIG. 3A, but in order to improve the area use efficiency of the multiplexer circuit 120, one of the first switch group TG1, the second switch group TG2 and the third switch group TG3 Within the layout area LA, the area given up by the transistor with the smallest area can be occupied by the transistor with the largest area to minimize the area of the layout area LA. Taking the first switch group TG1 as an example, the channel width W1 of the transistor T1 is the largest, the channel width W2 of the transistor T2 is centered, and the channel width W3 of the transistor T3 is smallest. The largest transistor T1 can be divided into a channel width W11 portion and a channel width W12 portion, but the two portions are coupled. The smaller channel width W12 can be arranged next to the smallest transistor T3, effectively using the space given by the transistor T3 to save the area of the layout area LA.

The transistors T1 to T9 of the embodiment of FIG. 4 are controlled by the driving signals DS1 to DS3. In the first period T1, the driving signal DS1 turns on the crystals T1, T4, and T7, and the first sensing electrode group G1 can communicate with the sensing driving circuit 130. In the second period T2, the transistors T2, T5, and T8 are turned on. The second sensing electrode group G2 can communicate with the sensing driving circuit 130. In the third period T3, the transistors T3, T6, and T9 are turned on, and the third sensing electrode group G3 can communicate with the sensing driving circuit 130. In each period, one of the first touch electrode group G1, the second touch electrode group G2, and the third touch electrode group G3 may communicate with the sensing driving circuit 130.

That is, in this embodiment, the multiplexer circuit 120 includes at least a first switch group and a second switch group, for example, a first switch group TG1 and a second switch group TG2. The first switch group TG1 includes at least one of the first transistors (for example, transistor T1) and at least one of the second transistors (for example, transistor T2). The second switch group TG2 includes at least one other for these first transistors. One (eg transistor T4) and at least another of these second transistors (eg transistor T5). The first transistors are all turned on in the first period, and the second transistors are all turned on in the second period.

Please refer to FIG. 5, which is a schematic diagram of a touch device according to another embodiment of the present invention. The embodiment of FIG. 5 can also be regarded as a schematic diagram of some touch electrodes of the touch device 100. The embodiment in FIG. 5 is similar to the embodiment in FIG. 2 or FIG. 4, and the touch electrodes in the touch sensing area 110 are also divided into a first touch electrode group G1, a second touch electrode group G2, and a third touch electrode. Group G3. However, the multiplexer circuit 120 is replaced by the multiplexer circuit 520 in the embodiment of FIG. 5. The multiplexer circuit 520 includes more switch groups than the multiplexer circuit 120, and each touch electrode in the touch sensing area 110 is coupled to at least two transistors of the multiplexer circuit 520. That is, each sensing line SL can be coupled to at least two transistors, and the number is not limited.

Please refer to FIG. 6, which is a schematic diagram of a multiplexer circuit according to an embodiment of the present invention. In addition to the first switch group TG1, the second switch group TG2, and the third switch group TG3, the multiplexer circuit 520 includes a fourth switch group TG4, a fifth switch group TG5, and a sixth switch group TG6. Each sensing line SL One transistor (one of the transistors T1 to T9) of the first switch group TG1, the second switch group TG2, and the third switch group TG3, and the fourth switch group TG4, the fifth switch group TG5, and the first switch group TG3 are coupled. One transistor in the six-switch group TG6 (one of the transistors Ta to Ti). The transistor sizes of the fourth switch group TG4, the fifth switch group TG5, and the sixth switch group TG6 are not exactly the same. For example, refer to the sizes of the transistors of the first switch group TG1, the second switch group TG2, and the third switch group TG3. The design principle also determines the resistance of the transistor corresponding to the position of the coupled sensing electrode PX.

For convenience of illustration, FIG. 5 only shows three touch electrodes PX, and the transistors T1 to T3 coupled to the three touch electrodes PX and the transistors Ta to Tc of the fourth switch group TG4. The three touch electrodes PX may be the touch electrodes PX1 to PX3 of FIG. 2 or the touch electrodes PX1 of the first touch electrode group G1 of FIG. 4 and the touch electrodes PX4 and third touch electrodes of the second touch electrode group G2. Control electrode group G3 PX7. The output node NA of the first switch group TG1 and the output node NB of the fourth switch group TG4 can be coupled to the output node NC, and the output node NC outputs a touch sensing signal to the sensing driving circuit 130, as shown in FIG. 5.

In another embodiment, the output node NA and the output node NB may also be separated, and the touch sensing signal is transmitted to the sensing driving circuit 130 via the output node NA or the output node NB, which is not limited in the present invention.

In this embodiment, the fourth transistor Ta and the first transistor T1 share a sensing line SL to electrically connect the touch electrode PX, and the fifth transistor Tb and the second transistor T2 share a sensing line SL to electrically The touch electrode PX is connected, and the sixth transistor Tc and the third transistor T3 share a sensing line SL to electrically connect the touch electrode PX. The two transistors coupled to the same sensing line SL have different sizes, that is, the impedances of the transistors provided are different.

Please refer to FIG. 7A and FIG. 7B. FIG. 7A and FIG. 7B are waveform diagrams of a driving signal according to an embodiment of the present invention, respectively. The transistors T1 to T3 are controlled by the driving signals DS1 to DS3, and the transistors Ta to Tc are controlled by the driving signals DS4 to DS6, respectively. When the driving signal is at a high level, the transistor is turned on. When the driving signal is at a low level, the transistor is not turned on, but it is not limited.

In the embodiment of FIG. 7A, in the first period T1, the driving signal DS1 is in a high level state, and the driving signals DS2 to DS6 are in a low level state. Only the transistor T1 is turned on, and other transistors T2, T3, and Ta are turned on. ~ Tc is off. In the second period T2, only the transistor T2 is turned on, and the other transistors T1, T3, and Ta to Tc are turned off. In the third period T3, only the transistor T3 is turned on, and the other transistors T1, T2, Ta to Tc are turned off. This embodiment is similar to the driving modes of the embodiments of FIG. 2 and FIG. 4, and only uses the first switch group TG1, the second switch group TG2, and the third switch group TG3 to control signal transmission.

In the embodiment of FIG. 7B, in the first period T1, the driving signal DS4 is in a high level state, the driving signals DS1 to DS3, DS5, and DS6 are in a low level state, and only the transistor Ta is turned on. In the second period T2, only the transistor Tb is turned on, and in the third period T3, only the transistor Tc is turned on.

In the embodiments of FIGS. 7A and 7B, the touch sensing signals of the touch electrodes PX may be output to the sensing driving circuit 130 through the first switch group TG1 or the fourth switch group TG4, where the first switch group TG1 and The transistors of the fourth switch group TG4 can provide different impedances.

In detail, when the three touch electrodes PX in FIG. 5 are the touch electrodes PX1 to PX3 in FIG. 2, the transistors T1 to T3 of the first switch group TG1 are all first transistors, and the transistors T1 to T3 are The impedances can be all the same, so the impedances of the transistors Ta to Tc can also be the same, wherein the impedance of the transistor T1 is designed to be smaller than the impedance of the transistor Ta. When the touch sensing signal needs a smaller impedance for impedance matching, the first switch group TG1 can be turned on to allow the touch sensing signal to be adjusted by the transistor T1 with a smaller impedance; otherwise, it can be turned on. The fourth switch group TG4 allows the touch sensing signal to be adjusted by the transistor Ta having a larger impedance.

In another embodiment, when the impedances of the transistors T1 to T3 are the same, the impedances of the transistors Ta to Tc may be different.

When the three touch electrodes PX of FIG. 5 are the touch electrodes PX1 of the first touch electrode group G1 of FIG. 4, the touch electrodes PX4 of the second touch electrode group G2 and PX7 of the third touch electrode group G3 The transistors T1 to T3 of the first switch group TG1 belong to the first to third transistors, respectively, and the transistors Ta to Tc of the fourth switch group TG4 also belong to the first to third transistors, so the transistors T1 to T3 The impedances are different, and the impedances of the transistors Ta to Tc may also be different. The resistance relationship between the transistors T1 to T3 and the transistors Ta to Tc is not limited in the present invention.

In another embodiment, when the resistances of the transistors T1 to T3 are different, the resistances of the transistors Ta to Tc may be the same.

Here, in another embodiment, the transistors of the first to third switch groups TG1 to TG3 may be turned on in a certain period, and the transistors of the fourth to sixth switch groups TG4 to TG6 may be turned on in other periods. In another embodiment, the first switch group TG1 and the fourth switch group TG4 may be turned on at the same time.

In particular, the sensing line SL can be coupled to multiple transistors with different impedances in the multiplexer circuit. By selecting and turning on the transistor with the desired impedance, the touch sensing signal can be adjusted to achieve zoom in or zoom out. The effect of touch sensing signals.

Please refer to FIG. 8, which is a schematic diagram of a touch device according to another embodiment of the present invention. The embodiment of FIG. 8 is similar to the embodiment of FIG. 5, but in the embodiment of FIG. 8, in addition to using different transistor sizes to adjust the matching impedance, further windings are used to add additional matching impedance.

In this embodiment, the fourth switch group TG4, the fifth switch group TG5, and the sixth switch group TG6 are coupled to the path that is coupled to the sensing line SL to increase the winding or change the material of the line to provide additional impedance, such as Impedance Ra, impedance Rb, and impedance Rc. The magnitudes of the increased impedances Ra, Rb, and Rc may be the same or different. The magnitude relationship of the impedances Ra, Rb, and Rc may also correspond to the positions of the touch electrodes to be coupled, as the transistors T1 to T9 in the above embodiments correspond to the positions of the touch electrodes PX and have different impedances. For example, in FIG. 8, the touch electrode PX coupled to the impedance Ra is the farthest, and the touch electrode PX coupled to the impedance Ra is the closest, so the impedance Ra is smaller than the impedance Rb and the impedance Rb is smaller than the impedance Rc.

Regarding the implementation of FIG. 8, those with ordinary knowledge in the art can obtain sufficient implementations, teachings, and suggestions through the description of the foregoing embodiments, and details are not described herein again.

In the embodiments of FIGS. 5 and 8, the flexibility of adjusting the touch sensing signal is expanded by providing more impedance options. When the touch sensing signal needs to be amplified, a path with a lower impedance can be selected, and when the touch sensing signal needs to be reduced, a path with a higher impedance can be selected. By switching between multiple transistors and winding or changing the additional impedance provided by the wiring material, the additional impedance Ra, Rb, Rc can increase the flexibility of impedance matching while maintaining the area of the transistor.

In summary, the touch device of the present invention can provide compensation resistance by adjusting the size of the transistor in the multiplexer circuit without increasing the area of the touch panel and the number of sensing lines. Support for touch sensing signals. Because it can achieve the effect of enhancing touch operation performance under low-cost conditions. In addition, it is also possible to use a combination of transistors of different sizes to optimize the spatial configuration of the transistor. The touch device of the present invention can also expand the adjustment flexibility of touch sensing signals by adding additional transistors or impedances of the traces.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

100‧‧‧ touch device

110‧‧‧touch sensing area

120、520‧‧‧Multiplexer circuit

130‧‧‧Sense driving circuit

DS, DS1 ～ DS6‧‧‧ driving signals

G1‧‧‧The first touch electrode group

G2‧‧‧Second touch electrode group

G3‧‧‧Third touch electrode group

L, L1, L2, L3‧‧‧ channel length

LA‧‧‧Layout area

NA, NB, NC‧‧‧ output nodes

PX, PX1 ～ PX9‧‧‧touch electrodes

Ra, Rb, Rc‧‧‧ additional impedance

SL‧‧‧sensing line

T1 ~ T9, Ta ~ Ti‧‧‧Transistors

TG1 ~ TG6‧‧‧‧The first switch group to the sixth switch group

W1, W11, W12, W2, W3‧‧‧Channel width

X, Y, Z‧‧‧ directions

FIG. 1 is a schematic diagram of a touch device according to an embodiment of the invention. FIG. 2 is a partial schematic diagram of a touch device according to an embodiment of the invention. FIG. 3A is a schematic diagram of a channel size of an transistor according to an embodiment of the present invention. FIG. 3B is a schematic diagram of a channel size of a transistor according to another embodiment of the present invention. FIG. 3C is a schematic diagram of a channel size of a transistor according to another embodiment of the present invention. FIG. 4 is a partial schematic diagram of a touch device according to another embodiment of the present invention. FIG. 5 is a partial schematic diagram of a touch device according to another embodiment of the present invention. FIG. 6 is a schematic diagram of a multiplexer circuit according to an embodiment of the present invention. 7A and 7B are waveform diagrams of a driving signal according to an embodiment of the present invention, respectively. FIG. 8 is a partial schematic diagram of a touch device according to another embodiment of the present invention.

Claims (18)

A touch device includes: a plurality of touch electrodes, wherein according to the positions of the touch electrodes, the touch electrodes are divided into a first touch electrode group and a second touch electrode group; A test driving circuit; and a multiplexer circuit, which is electrically connected between the touch electrodes and the sensing driving circuit, and includes a plurality of first transistors and electrical circuits which are electrically connected to the first touch electrode group. A plurality of second transistors connected to the second touch electrode group, wherein the size of the first transistors is different from that of the first touch electrode group and the second touch electrode group The size of the second transistors, wherein the touch electrodes are divided into the first touch electrode group and the second touch electrode according to the distance from the touch electrodes to the multiplexer circuit or the sensing driving circuit; For a touch electrode group, when the wiring distance from the first touch electrode group to the multiplexer circuit is greater than the wiring distance from the second touch electrode group to the multiplexer circuit, or when the first touch electrode group The distance between the control electrode group and the sensing driving circuit is greater than the distance between the second touch electrode group and the sensing driving circuit. When the driving circuit traces measured distance, the plurality of first transistors of the plurality of second size different from the size of transistors to the plurality of the impedance of the first transistor is smaller than the impedance of the plurality of second transistors. According to the touch device described in item 1 of the scope of patent application, the greater the channel width or the smaller the channel length of the transistor coupled to the touch electrode as the distance from the multiplexer circuit or the sensing driving circuit is. The touch device according to item 1 of the scope of patent application, wherein the impedances of the first transistors are equal, and the impedances of the second transistors are equal. The touch device according to item 1 of the patent application scope, wherein the multiplexer circuit includes a first switch group and a second switch group, the first switch group includes the first transistors, and the second switch The group includes the second transistors, and each of the first transistors and the second transistors is turned on in a plurality of periods, and in each of the periods, the first transistors are turned on. It is turned on simultaneously with at least one of the second transistors. The touch device according to item 1 of the patent application scope, wherein the multiplexer circuit includes a first switch group and a second switch group, and the first switch group includes at least one of the first transistors and At least one of the second transistors, the second switch group includes at least another one of the first transistors and at least one other of the second transistors, and the first transistors are in a first period All are turned on, and the second transistors are all turned on in the second period. The touch device according to item 5 of the scope of patent application, wherein in a layout area of the first switch group or the second switch group, an area given by the smallest transistor is occupied by the largest transistor. In order to minimize the area of the layout area. A touch device includes: a plurality of touch electrodes, wherein according to the positions of the touch electrodes, the touch electrodes are divided into a first touch electrode group and a second touch electrode group; Test drive circuit; and A multiplexer circuit electrically connected between the touch electrodes and the sensing driving circuit, and including a plurality of first transistors electrically connected to the first touch electrode group and electrically connected to the second The plurality of second transistors of the touch electrode group, wherein the sizes of the first transistors are different from those of the second transistors corresponding to the positions of the first touch electrode group and the second touch electrode group. , Wherein the multiplexer circuit includes a first switch group and a second switch group, the first switch group includes the first transistors, the second switch group includes the second transistors, and Each of the first transistors and the second transistors are turned on for a plurality of periods, and in each of the periods, at least one of the first transistors and the second transistors is turned on. One is turned on at the same time. A touch device includes: a plurality of touch electrodes, wherein according to the positions of the touch electrodes, the touch electrodes are divided into a first touch electrode group and a second touch electrode group; A test driving circuit; and a multiplexer circuit, which is electrically connected between the touch electrodes and the sensing driving circuit, and includes a plurality of first transistors and electrical circuits which are electrically connected to the first touch electrode group. A plurality of second transistors connected to the second touch electrode group, wherein the size of the first transistors is different from that of the first touch electrode group and the second touch electrode group The size of the second transistors, wherein the multiplexer circuit includes a first switch group and a second switch group, the first switch group includes at least one of the first transistors and the second transistors At least one of the crystals, the second switch group includes at least one of the first transistors and the At least another one of the second transistors and the first transistors are all turned on in the first period, and the second transistors are all turned on in the second period. The touch device according to item 7 or item 8 of the scope of patent application, wherein the channel width of the transistor to which the touch electrode is coupled is larger the farther away from the multiplexer circuit or the sensing driving circuit or The smaller the channel length. The touch device according to item 7 or item 8 of the scope of patent application, wherein the touch electrodes are divided into the touch electrodes according to the distance from the touch electrodes to the multiplexer circuit or the sensing driving circuit. The first touch electrode group and the second touch electrode group. The touch device according to item 8 of the scope of patent application, wherein in a layout area of the first switch group or the second switch group, the area given by the smallest area transistor is occupied by the largest area transistor In order to minimize the area of the layout area. A touch device includes: a plurality of touch electrodes, wherein according to the positions of the touch electrodes, the touch electrodes are divided into a first touch electrode group and a second touch electrode group; A test driving circuit; and a multiplexer circuit electrically connected between the touch electrodes and the sensing driving circuit, the multiplexer circuit includes: a plurality of first transistors, a plurality of second transistors, A plurality of third transistors and a plurality of fourth transistors, wherein each of the third transistors and each of the first transistors share a sensing line to electrically connect the first touch electrode group, and each of the fourth Transistor and each second transistor Another sensing line is shared to electrically connect the second touch electrode group, wherein the impedance of each first transistor is different from the impedance of the third transistor on the same sensing line, and the second electrode The impedance of the crystal is different from the impedance of the fourth transistor that is also on the other sensing line. The touch device according to item 12 of the scope of patent application, wherein, based on the opening or closing of the first transistor and the third transistor on the same sensing line, the The size of the touch sensing signal. The touch device according to item 12 of the scope of patent application, wherein the sizes of the first transistors are different from those of the second corresponding to the positions of the first touch electrode group and the second touch electrode group. Transistor size. The touch device according to item 12 of the scope of patent application, wherein the touch electrodes are divided into the first touch according to the distance between the touch electrodes and the multiplexer circuit or the sensing driving circuit. An electrode group and the second touch electrode group. The touch device according to item 15 of the scope of patent application, wherein when the distance from the first touch electrode group to the multiplexer circuit or the sensing driving circuit is longer than the distance from the second touch electrode group to the multi The distance of the worker circuit or the sensing driving circuit, the channel width of the first transistor is larger than the channel width of the second transistor, or the channel length of the first transistor is shorter than the channel length of the second transistor. The touch device according to item 15 of the scope of patent application, wherein when the distance from the first touch electrode group to the multiplexer circuit or the sensing driving circuit is longer than the distance from the second touch electrode group to the multi Distance of the worker circuit or the sensing driving circuit, the first The channel width of the three transistors is larger than the channel width of the fourth transistor, or the channel length of the third transistor is smaller than the channel length of the fourth transistor. The touch device according to item 12 of the application, wherein when the third transistor is connected to the sensing line, there is a first additional resistor, and the fourth transistor is connected to the other sensor. The test line also has a second additional resistor.