TWI673454B - Light emitting device - Google Patents

Abstract

A light-emitting bulb includes a lamp cover, an electrical connector, a light board and a first light-emitting device. The electrical connector is coupled to the lampshade. The lamp plate is disposed between the lamp cover and the electrical connection member. The first light-emitting device is disposed on the lamp board and includes a first carrier, a first electrode portion, a bent portion, and a second electrode portion. The first carrier has a first side and a second side. The first electrode portion is disposed on the first carrier and is close to the first side and extends toward the second side. The bent portion is disposed on the first carrier and is close to the second side and spaced apart from the first electrode portion. The second electrode portion extends from the bent portion to the first side. The second electrode portion is provided without a light emitting diode element thereon.

Description

Light emitting device

The present invention relates to a light emitting device, and more particularly, to a light emitting device having a uniform light field.

Light Emitting Diode (LED) in solid-state light-emitting devices has low power consumption, low heat generation, long operating life, impact resistance, small size, fast response speed, and can emit colored light with a stable wavelength. Optoelectronic characteristics, so it is often used in home appliances, indicator lights and optoelectronic products. Similar to the trend of light, thin and short commercial electronic products, optoelectronic components have also entered the era of micro-packages, and have developed die-level packages. In addition, with the development of optoelectronic technology, solid-state lighting has made significant progress in terms of lighting efficiency, operating life, and brightness. Therefore, light-emitting diodes have been used in general lighting applications in recent years. However, in some applications when a light-emitting diode lamp with an omnidirectional light field is required, the traditional light-emitting diode lamp cannot meet this demand.

It should be noted that the light-emitting diode can be combined with other devices to form a light-emitting device, such as placing the light-emitting diode on a substrate and then connecting it to one side of the carrier, or using solder joints or adhesives. The material is formed between the carrier and the light emitting diode to form a light emitting device. In addition, the carrier may further include an electrode that is electrically connected to the light emitting diode.

Therefore, the present invention relates to a light emitting bulb.

A light-emitting bulb includes a lampshade, an electrical connector, a lamp board, and a first light-emitting device. The electrical connector is coupled to the lampshade. The lamp plate is disposed between the lamp cover and the electrical connection member. The first light-emitting device is disposed on the lamp board and includes a first carrier, a first electrode portion, a bent portion, and a second electrode portion. The first carrier has a first side and a second side. The first electrode portion is disposed on the first carrier and is close to the first side and extends toward the second side. The bent portion is disposed on the first carrier and is close to the second side and spaced apart from the first electrode portion. The second electrode portion extends from the bent portion to the first side. The second electrode portion is provided without a light emitting diode element thereon.

In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the following describes the preferred embodiments in detail with the accompanying drawings, as follows.

The following embodiments will illustrate the concept of the present invention along with drawings. In the drawings or description, similar or identical parts are denoted by the same reference numerals, and in the drawings, the shape or thickness of elements can be enlarged or reduced. It is important to note that components not shown or described in the figures may be in a form known to those skilled in the art.

1A and 1B are perspective views of a light emitting device 100 according to an embodiment of the present invention. The light-emitting device 100 includes a long-shaped carrier 10 having an upper surface 101 and a lower surface 102 opposite to the upper surface 101; a plurality of light-emitting diode elements 11 are disposed on the upper surface 101; and an upper electrode 20 is formed on the upper surface 101. The surface 101; a lower electrode 30 is formed on the lower surface 102; and a transparent body 103 covers the upper electrode 20 and the light emitting diode element 11. In this embodiment, the length of the carrier 10 is 18 mm to 30 mm and the width is less than 3 mm; the width of the light emitting diode element 11 is 0.5 mm to 1.5 mm; the length of the light emitting diode element 11 is 1 mm to 3 mm. . Referring to FIG. 1A, the upper electrode 20 includes two upper electrode pads 201 and 202 and an upper electrode lead 203. Referring to FIG. 1B, the lower electrode 30 is formed on the lower surface 102 and includes two lower electrode pads 301 and 302 and a lower electrode lead 303. The lower electrode lead 303 is a straight line, is in contact with the two lower electrode pads 301, 302, and is electrically connected. As shown in FIG. 1C, a conductive connection line 208 may be selectively formed on the side of the carrier 10 to electrically connect the upper electrode pad 202 and the lower electrode pad 302. Alternatively, a hole (not shown) may be selectively formed through the carrier 10, and the hole may be completely or partially filled with a conductive substance, so that the upper electrode pad 202 and the lower electrode pad 302 may form an electrical connection. In operation, when the light emitting device 100 is connected to an external power supply, and when no conductive connection line 208 is formed, the upper electrode 20 bis and the upper electrode pads 201 and 202 may be connected to the positive and negative ends of the external power source, respectively. The terminals are connected to make the light-emitting diode element 11 emit light, that is, an external power source is connected to the same side (upper surface) of the carrier 10 but opposite sides. Alternatively, when a conductive connection line 208 is further formed to electrically connect the upper electrode pad 202 and the lower electrode pad 302, the positive and negative ends of the external power source may be electrically connected to the upper electrode pad 201 and the lower electrode pad 301, respectively, so that The polar element 11 emits light, that is, an external power source is connected to different sides (upper and lower surfaces) of the carrier 10 but on the same side. By forming the upper electrode 20, the lower electrode 30, and / or the conductive connection line 208, the light emitting device 100 can be electrically connected to an external power source selectively on different sides of the carrier 10 but on the same side or on the same side of the carrier 10 but on opposite sides. , Thereby increasing the applicability of the light emitting device 100.

The transparent body 103 may include a single layer or multiple layers. When the transparent body 103 is a plurality of layers (not shown), it may sequentially include a first transparent layer, a wavelength conversion layer, and a second transparent layer. The materials of the first transparent layer and the second transparent layer may include, for example, epoxy, polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), SU8, acrylic Resin (Acrylic Resin), Polymethyl Methacrylate (PMMA), Polyethylene Terephthalate (PET), Polycarbonate (PC), Polyetherimide, Fluorocarbon Polymer), glass, Al ₂ O ₃ , SINR, spin-on-glass (SOG), Teflon or a combination of the above materials. The wavelength conversion layer includes, but is not limited to, alumina (such as YAG or TAG), silicate, vanadate, alkaline earth metal silicate, alkaline earth metal sulfide, alkaline earth metal selenide, alkaline earth metal gallium sulfide, metal nitride, Metal oxynitride, tungsten molybdate group mixture, oxide mixture, or a combination of the above materials. In this embodiment, the light-emitting diode element 11 can emit blue light (wave peaks of 430 nm to 480 nm), and part of the blue light can excite the wavelength conversion layer to generate yellow light (wave peaks of 570 nm to 590 nm) or Yellow-green light (its wave peak is 540 nm ~ 570 nm). When yellow or yellow-green light is properly mixed with the remaining blue light, a white light is produced.

FIG. 2A is a top view of the light-emitting device of FIG. 1A, and the transparent body 103 is not shown. Referring to FIGS. 1A and 2A, the upper electrode lead 203 is patterned and has a plurality of electrode blocks 2031. In this embodiment, the electrode blocks 2031 are arranged in a straight line along the length direction (X direction) of the carrier 10, and are separated from each other and are not physically connected. Each electrode block 2031 includes a first end 2032 and a second end 2033. In an embodiment, the distance (d ₁ ) between the light-emitting diode elements 11 is between 0.5 mm and 1.2 mm, and the distance between the light-emitting diode elements 11 may be equal or unequal, and is designed according to actual needs. Of it. FIG. 2B is a cross-sectional view taken along line II ′ of FIG. 2A but showing the transparent body 103. Referring to FIG. 2B, each light-emitting diode element 11 has a first connection pad 111 (for example: p-pole) and a second connection pad (for example: n-pole) 113, the positions of which correspond to one of the electrode blocks 2031, respectively. The first end 2032 and the second end 2033 of the adjacent electrode block 2031 are in contact with each other to form an electrical connection. Thereby, the light emitting diode elements 11 are electrically connected to each other in series on the carrier 10. A transparent body 103 covers part of the upper electrode 20 and the light emitting diode element 11.

FIG. 3A shows a top view of a light emitting device according to another embodiment of the present invention, and a transparent body is not shown. Fig. 3B is a cross-sectional view of Fig. 3A along II-II 'but showing a transparent body. 3A and 3B, the upper electrode lead 204 includes a first electrode section 2041 and a second electrode section 2042. The first electrode section 2041 and the second electrode section 2042 are arranged along the length direction (X direction) of the carrier 10, and are parallel, staggered, and physically disconnected from each other. The light-emitting diode elements 11 are arranged along the length direction (X direction) of the carrier 10 and one of the first connection pads 111 and a second connection pad 113 of the light-emitting diode element 11 has positions corresponding to the first electrode regions, respectively. The segment 2041 and the second electrode section 2042 are electrically connected to each other. For example, the first connection pad 111 of the light-emitting diode element 11A corresponds to the first electrode section 2041A, and the second connection pad 113 of the light-emitting diode element 11A corresponds to the second electrode section 2042A; the light-emitting diode element 11B The first connection pad 111 corresponds to the second electrode section 2042A, and the second connection pad 113 of the light-emitting diode element 11B corresponds to the first electrode section 2041B. The second connection pad 113 of the light-emitting diode element 11A and the first connection pad 111 of the light-emitting diode element 11B are disposed on the second electrode section 2042A and form an electrical connection. Thereby, the light emitting diode elements 11 are electrically connected to each other in series on the carrier 10. In this embodiment, the second connection pad 113 of the light-emitting diode element 11A and the first connection pad 111 of the light-emitting diode element 11B are located on the same side of the carrier 10, and the first connection pad 111 of the light-emitting diode element 11A The second connection pad 113 connected to the light-emitting diode element 11B is located on the other side of the carrier 10. The light-emitting device further includes a transparent body 103 covering the upper electrode 20 and the light-emitting diode element 11.

FIG. 4A shows a top view of a light emitting device in another embodiment of the present invention. Referring to FIG. 4A, the upper electrode lead 205 includes a plurality of electrode blocks 2051 arranged along a length direction of the carrier 10 at an inclined angle. Each electrode block 2051 includes a first end 2052 and a second end 2053. The light-emitting diode elements 11 are arranged along the length direction of the carrier 10 and at an inclined angle with the electrode block 2051. Each light-emitting diode element 11 has a first connection pad (not shown) and a second connection pad (not shown), the positions of which correspond to a first end 2052 of an electrode block 2051 and an adjacent electrode, respectively. The second end 2053 of the block 2051 is electrically connected to each other. Thereby, the light emitting diode elements 11 are electrically connected to each other in series on the carrier 10. In this embodiment, the second connection pads of the light-emitting diode element 11 are located on the same side of the carrier 10, and the first connection pads are located on the other side of the carrier 10.

FIG. 4B is a top view of a light emitting device according to another embodiment of the present invention. Referring to FIG. 4B, the upper electrode lead 206 includes a first electrode strip-shaped region 2061 and a second electrode strip-shaped region 2062. The upper electrode pad 201 is electrically connected to the first electrode strip region 2061 only, and the upper electrode pad 202 is electrically connected to the second electrode strip region 2062 only. Each light-emitting diode element 11 has a first connection pad (not shown) and a second connection pad (not shown), the positions of which correspond to the first electrode strip regions 2061 and The two electrode strip regions 2062 are electrically connected to each other. Thereby, the light emitting diode elements 11 are electrically connected to each other in parallel on the carrier 10.

FIG. 4C is a top view of a light emitting device according to another embodiment of the present invention. Referring to FIG. 4C, the upper electrode 20 includes an upper electrode pad 201 and an upper electrode lead 209 formed on the upper surface 101 of the carrier board 10. The upper electrode lead 209 includes a first electrode bar 2091 and a second electrode bar 2092. The first electrode bar 2091 and the second electrode bar 2092 are separated from each other and are not physically connected. The first electrode strip 2091 includes a first region 20911; a first long strip 20912 extends from the first region 20911 along the length direction (-X direction) of the carrier 10 and is electrically connected to the first region 20911; and a plurality of first The branch 20913 extends from the first strip 20912 in the width direction (-Y direction) of the carrier 10 and is electrically connected to the first strip 20912. The second electrode strip 2092 includes a second long strip 20921, which extends from the upper electrode pad 201 along the length direction (-X direction) of the carrier 10 and is electrically connected to the upper electrode pad 201; a plurality of second branches 20922, which are from the first The two long strips 20921 extend along the width direction (Y direction) of the carrier 10 and are electrically connected to the second long strips 20921. The first strip 20912 and the second strip 20921 are parallel to each other; the first branch 20913 and the second branch 20922 are staggered and parallel to each other. The plurality of light-emitting diode elements 11 have a first connection pad (not shown) and a second connection pad (not shown), the positions of which correspond to the first branch 20913 and the second branch 20922 and form electrical connections with each other. connection.

Figure 4D shows a top view of the light emitting device in Figure 4C. Referring to FIG. 4D, the lower electrode 30 includes a lower electrode pad 301 and a lower electrode lead 310 formed on the lower surface 102 of the carrier board 10. The lower electrode lead 310 includes a third electrode bar 3101 and a fourth electrode bar 3102. The third electrode bar 3101 and the fourth electrode bar 3102 are separated from each other and are not physically connected. The third electrode strip 3101 includes a second region 31011; the third long strip 31012 extends from the second region 31011 along the length direction (-X direction) of the carrier 10 and is electrically connected to the second region 31011; a plurality of third The branch 31013 extends from the third strip 31012 along the width direction (-Y direction) of the carrier 10 and is electrically connected to the third strip 31012. The fourth electrode strip 3102 includes a third region 31021; the fourth long strip 31022 extends from the lower electrode pad 301 along the length direction (-X direction) of the carrier 10 and is electrically connected to the lower electrode pad 301 and the third region 31021 ; A plurality of fourth branches 31023 extend from the fourth strip 31022 along the width direction (Y direction) of the carrier 10 and are electrically connected to the fourth strip 31022. The third strip 31012 and the fourth strip 31022 are parallel to each other; the third branch 31013 and the fourth branch 31023 are staggered and parallel to each other. The plurality of light-emitting diode elements 11 have a first connection pad (not shown) and a second connection pad (not shown), the positions of which correspond to the fourth branch 31023 and the third branch 31013, respectively, and are electrically connected to each other. . 4C and 4D, the position of the first region 20911 corresponds to the third region 31021, and a hole 211 is formed in the first region 20911 and the third region 31021 and penetrates the carrier board 10; the position of the second region 31011 corresponds to A hole 212 is formed in the upper electrode pad 201, and a hole 212 is formed in the second region 31011 and the upper electrode pad 201 and penetrates the carrier board 10. The holes 211 and 212 can be completely or partially filled with a conductive substance, so that both sides of the carrier 10 can be electrically connected to each other. In detail, when the positive and negative ends of the external power supply are electrically connected to the upper electrode pad 201 and the lower electrode pad 301, respectively, through the hole 212, the upper electrode pad 201 is electrically connected to the second region 31011, and further to the third electrode. The strip 31012 is electrically connected to the third branch 31013, that is, the upper electrode pad 201, the second electrode strip 2092, and the third electrode strip 3101 are electrically connected to a positive terminal of an external power source. Similarly, through the hole 211, the first region 20911 and the third region 31021 form an electrical connection. Since the third region 31021 forms an electrical connection with the lower electrode pad 301, the lower electrode pad 301 may be connected to the first long strip 20912 and the first branch 20913. An electrical connection is formed, that is, the lower electrode pad 301, the first electrode bar 2091, and the fourth electrode bar 3102 are electrically connected to a negative terminal of an external power source. Thereby, the light emitting diode elements 11 on the upper surface 101 and the lower surface 102 can both emit light and be electrically connected to each other in parallel. It should be noted that, in this embodiment, the first strip and the fourth strip can be electrically connected only through the holes 211. In another embodiment, it is not necessary to form the first strip 20912, the first region 20911, and the hole 211, but to form a plurality of holes corresponding to each first branch so that the first branch is electrically connected to the fourth strip respectively. .

FIG. 4E is a top view of a light emitting device according to another embodiment of the present invention. Referring to FIG. 4E, the upper electrode lead 207 includes a first electrode region 2071, a second electrode region 2072, and a third electrode region 2073. The long sides of the first electrode region 2071 and the third electrode region 2073 are parallel to the short side (width) of the carrier 10; the short sides of the second electrode region 2072 are parallel to the long side (length) of the carrier 10. A plurality of light-emitting diode elements are disposed on the carrier 10 and are electrically connected to each other in a bridge circuit manner by the arrangement of the upper electrode wires 207. The first connection pad and the second connection pad of the light-emitting diode element are located between the light-emitting diode element and the upper electrode lead. In order to facilitate understanding of the content of this embodiment, they are shown in FIG. 4E. In detail, the position of the first connection pad 111C of the light-emitting diode element 11C corresponds to the first electrode region 2071 to form an electrical connection; the position of the second connection pad 113C of the light-emitting diode element 11C corresponds to the second electrode region. 2072A to form an electrical connection; the position of the first connection pad 111D of the light-emitting diode element 11D corresponds to the third electrode region 2073 to form an electrical connection; the position of the second connection pad 113D of the light-emitting diode element 11D corresponds to the second The electrode region 2072A forms an electrical connection; the position of the first connection pad 111E of the light emitting diode element 11E corresponds to the second electrode region 2072A to form an electrical connection; the position of the second connection pad 113E of the light emitting diode element 11E corresponds to The second electrode region 2072B forms an electrical connection; the position of the first connection pad 111F of the light emitting diode element 11F corresponds to the second electrode region 2072B to form an electrical connection; the position of the second connection pad 113F of the light emitting diode element 11F Corresponds to the first electrode region 2071 to form an electrical connection; and the position of the first connection pad 111G of the light-emitting diode element 11G corresponds to the second electrode region 2072B to form an electrical connection; Diode element 11G of the second connection pads 113G of positions corresponding to the third electrode region 2073 to form an electrical connection. With the arrangement of the upper electrode wires 207, the light-emitting diode elements 11C, 11D, 11E, 11F, and 11G are electrically connected to each other in a bridge circuit manner. Therefore, the light-emitting device can be directly electrically connected to an alternating current (AC) power supply . Refer to Figure 4G, which is an equivalent circuit diagram. Under the positive cycle of the AC power supply, the positive circulating current will flow through the light-emitting diode elements 11C, 11E, 11G. Under the negative cycle of the AC power supply, The negative circulating current flows through the light-emitting diode elements 11D, 11E, and 11F. It should be noted that only a group of bridge circuits are described here. However, as shown in FIG. 4E, a complex array of bridge circuits can be electrically connected to each other on the carrier 10, and the number can be based on the required voltage. (For example: 110V, 120V, 220V, or 240V). FIG. 4F is a top view of a light emitting device according to another embodiment of the present invention. Figure 4F is similar to Figure 4E, except that the second electrode region 2072 may include a plurality of secondary electrode regions 2072C located between the secondary electrode regions 2072A and 2072B. The positions of the plurality of light emitting diode elements 11E correspond to the secondary electrode regions 2072A, 2072C, and 2072B, respectively, and are electrically connected to each other in series. In another embodiment, the light-emitting diode elements 11E may be electrically connected to each other in parallel, or in a series-parallel manner.

FIG. 5A is a cross-sectional view of a light emitting device 200 according to another embodiment of the present invention. 5B and 5C show a top view and a bottom view of the light-emitting device 200 of the present invention, which does not show a light-emitting diode element. 5A to 5C, the light-emitting device 200 includes a carrier 10 'having an upper surface 101' and a lower surface 102 'opposite to the upper surface 101'; a plurality of light-emitting diode elements 12A and 12B are respectively disposed on the upper surface. On the surface 101 'and the lower surface 102'; an upper electrode 20 'is formed on the upper surface 101'; a lower electrode 30 'is formed on the lower surface 102'; and a transparent body 103 covers the upper electrode 20 ', the lower electrode 30' and Light-emitting diode elements 12A and 12B. As shown in FIG. 5B, the upper electrode 20 ′ includes an upper electrode pad 201 ′, a plurality of first electrode portions 2011 ′, and a plurality of second electrode portions 2012 ′. The first electrode portion 2011 ′ and the second electrode portion 2012 ′ are arranged in a straight line along the length direction (X direction) of the carrier 10 ′ and are staggered with each other. The second electrode portion 2012 'includes a plurality of non-connected secondary electrode portions 20121'. In this embodiment, the length of the first electrode portion 2011 'located between two adjacent second electrode portions 2012' is shorter than the length of the second electrode portion 2012 ', and the distance between the two adjacent light emitting diode elements is Less than the length of the light-emitting diode element. In this embodiment, the second electrode portion 2012 'includes three secondary electrode portions 20121', which are not connected to each other and are separated by a distance. 5A and 5B, the position of the first connection pad (not shown) of the light-emitting diode element 12A corresponds to the first electrode portion 2011 'to form an electrical connection; and the second connection pad of the light-emitting diode element 12A. The position (not shown) corresponds to the adjacent first electrode portion 2011 'to form an electrical connection. Therefore, the light emitting diode element 12A only partially covers the first electrode portion 2011' and the adjacent first electrode portion 2011 '. , And the light emitting diode element 12A completely covers the second electrode portion 2012 ′. The second electrode portion 2012 'is in contact with the light-emitting diode element 12A but is not electrically connected. The second electrode portion 2012' is used to conduct heat generated by the light-emitting diode element 12A to the outside (air). It should be noted that “contact” described herein may be direct contact or indirect contact. Indirect contact indicates that a conductive substance (such as solder) or a non-conductive substance (such as a bonding material) is formed between them. In another embodiment, the second electrode portion 2012 'may also be electrically connected to the light-emitting diode element 12A. As shown in FIG. 5C, the lower electrode 30 ′ includes a lower electrode pad 301 ′, a plurality of third electrode portions 3011 ′, and a plurality of fourth electrode portions 3012 ′. The pattern of the lower electrode 30 ′ is similar to the pattern of the upper electrode 20 ′. The third electrode portion 3011 ′ and the fourth electrode portion 3012 ′ are arranged in a straight line along the length direction (X direction) of the carrier 10 ′ and are staggered with each other. The fourth electrode portion 3012 'includes a plurality of non-connected secondary electrode portions 30121'. In this embodiment, the fourth electrode portion 3012 'includes three secondary electrode portions 30121', which are not connected to each other and are separated by a distance. 5A and 5C, the position of the first connection pad (not shown) of the light-emitting diode element 12B corresponds to the third electrode portion 3011 'to form an electrical connection; and the second connection pad of the light-emitting diode element 12B. The position (not shown) corresponds to the adjacent third electrode portion 3011 'to form an electrical connection. The fourth electrode portion 3012 'is in contact with the light-emitting diode element 12B but is not electrically connected, and is used to conduct heat generated by the light-emitting diode element 12B to the outside (air). In another embodiment, the fourth electrode portion 3012 'may also be electrically connected to the light emitting diode element 12B. It should be noted that the first electrode portion 2011 ′ and the fourth electrode portion 3012 ′ are respectively formed at positions substantially corresponding to the upper surface 101 ′ and the lower surface 102 ′ of the carrier 10 ′; The three electrode portions 3011 'are formed at positions corresponding to the upper surface 101' and the lower surface 102 'of the carrier 10', respectively. Accordingly, the plurality of light emitting diode elements 12A provided on the upper surface 101 'and the plurality of light emitting diode elements 12B provided on the lower surface 102' are staggered with each other, that is, the light emitting diode elements on the upper surface 101 ' 12A, the light emitting diode element 12B is not formed at a position corresponding to the lower surface 102 ', and the light emitting diode element 12A and the light emitting diode element 12B are not completely overlapped. The number, shape, length, and distance between the secondary electrode portions can be changed according to actual needs. In addition, the number, shape, and length of the first electrode portion 2011 ′, the second electrode portion 2012 ′, the third electrode portion 3011 ′, and the fourth electrode portion 3012 ′ may be changed according to actual needs. In this embodiment, referring to FIG. 1C, a conductive connection line 208 may be selectively formed on the side of the carrier 10 'to connect the first electrode portion 2011' at the extreme end and the third electrode portion at the extreme end. 3011 'are electrically connected to each other. Alternatively, a hole (not shown) may be selectively formed through the carrier 10 ′, and the hole may be completely or partially filled with a conductive substance, so that the first electrode portion 2011 ′ and the third electrode portion 3011 ′ may form electrical properties. connection. Therefore, in operation, when the light emitting device 200 is connected to an external power supply, the positive and negative ends of the external power supply can be electrically connected to the upper electrode pad 201 'and the lower electrode pad 301', respectively, so that the light emitting diodes The body elements 12A, 12B are connected in series with each other and emit light, that is, an external power source is connected to different sides (upper and lower surfaces) of the carrier 10 but on the same side.

FIG. 5D is a cross-sectional view of a light emitting device 200 'according to another embodiment of the present invention. FIG. 5E shows a top view of a light emitting device 200 'according to another embodiment of the present invention. The structure of the light-emitting device 200 ′ is similar to that of the light-emitting device 200, in which the same symbols, symbols, or corresponding elements, devices, or steps have similar or identical components, devices, or steps. The light emitting device 200 ′ further includes a surrounding plate 35 formed on the upper surface 101 ′ and / or the lower surface 102 ′ to surround the light emitting diode elements 12A and 12B (as shown in FIG. 5E). Next, a transparent body 103 is formed on the light-emitting diode elements 12A and 12B and the surrounding plate 35. In this embodiment, the height (0.3 mm to 0.75 mm) of the surrounding plate 35 is lower than the height (0.8 mm to 1 mm) of the light-emitting diode elements 12A and 12B, so that the formation range of the transparent body 103 can be made. It is substantially restricted by the fence 35. Therefore, when the same amount of transparent body 103 is used, the upper surface 1031 of the transparent body 103 of the light emitting device 200 ′ having the surrounding plate 35 is flat compared with the light emitting device without the surrounding plate 35 to improve the light emitting device 200. 'Uniformity of light angle. The material of the enclosure 35 may be the same as or different from that of the transparent body 103, and it includes epoxy, polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), SU8, Acrylic Resin, Polymethyl Methacrylate (PMMA), Polyethylene Terephthalate (PET), Polycarbonate (PC), Polyetherimide, Fluorocarbon Polymerization (Fluorocarbon Polymer), glass (Glass), alumina (Al ₂ O ₃ ), SINR, spin-on glass (SOG), Teflon or a combination of the above materials.

6A and 6B are cross-sectional views of a light-emitting device 300 according to another embodiment of the present invention. FIG. 6C shows a top view of the light-emitting device 300 in another embodiment of the present invention, and the electrical connection plate 25 is not shown. The light-emitting device 300 includes a carrier 10 "having an upper surface 101" and a lower surface 102 "opposite to the upper surface 101"; a plurality of light-emitting diode elements 13 are disposed on the upper surface 101 "; The upper electrode 20 ″ is formed on the upper surface 101 ″, an electrical connection plate 25; and a transparent body 103 covers the upper electrode 20 ″, the light-emitting diode element 13, and a part of the electrical connection plate 25. As shown in FIG. 6C, the upper electrode 20 '' includes a first electrode pad 201 '', a second electrode pad 202 '', a plurality of first electrode portions 2011 '', and a plurality of second electrode portions 2012 ''. , And the third electrode section 2013 ''. The first electrode pad 201 ″ and the second electrode pad 202 ″ are located on the same side and the same surface (upper surface) of the carrier 10 ″. The first electrode portion 2011 "and the second electrode portion 2012" are arranged in a straight line along the length direction (X direction) of the carrier 10 ", and are staggered with each other. The third electrode portion 2013 "is straight and parallel to the first electrode portion 2011" and the second electrode portion 2012 ". The upper electrode 20 '' further includes a bent portion 2014 '', one end of which is aligned on the same line as the second electrode portion 2012 '' but is not separated from each other, and the other end is in phase with the third electrode portion 2013 ''. Contact and electrical connection. The second electrode portion 2012 "includes a plurality of non-connected secondary electrode portions 20121". In this embodiment, the second electrode portion 2012 ″ includes three secondary electrode portions 20121 ”and is spaced apart from each other by a distance. 6A, the position of the first connection pad (not shown) of the light emitting diode element 13 corresponds to the first electrode portion 2011 "to form an electrical connection; and the second connection pad of the light emitting diode element 13 ( (Not shown) corresponds to the adjacent first electrode portion 2011 ″ to form an electrical connection. The second electrode portion 2012 ″ is in contact with the light-emitting diode element 13 but is not electrically connected, and is used to conduct heat generated by the light-emitting diode element 13 to the outside (air). In another embodiment, the second electrode portion 2012 ″ may also be electrically connected to the light emitting diode element 13. As shown in FIGS. 6A, 6B, 6D, and 6E, the light emitting device 300 further includes an electrical connection plate 25. The electrical connection board 25 includes a carrier board 250 having an upper surface 251 and a lower surface 252 opposite to the upper surface 251; and a first electrode block 253 is formed on the upper surface 251; a second electrode block 254 is formed on the lower surface 252. 6D, the first electrode block 253 has a first block region 2531; and a second block region 2532 is connected to the first block region 2531. Referring to FIG. 6E, the second electrode block 254 has a third block region 2541 and a fourth block region 2542 which is not connected to the third block region 2541. The second block region 2532 and the fourth block region 2542 are respectively formed on the upper surface 251 and the lower surface 252 and correspond to approximately the same positions. A hole 255 is formed in the second block 2532 and the fourth block 2542 and penetrates the carrier plate 250 (as shown in FIG. 6A). The hole 255 may be completely filled or partially filled with a conductive material to make the second block 2532 and the fourth block Region 2542 forms an electrical connection. The electrical connection plate 25 is placed on the upper electrode 20 '' corresponding to the carrier 10 ''; the fourth block 2542 is in contact with the first electrode pad 201 '' and is electrically connected; the third block 2541 and the second electrode pad 202 "is in contact with and electrically connected; the fourth block region 2542 is electrically connected to the first electrode block 253 by the conductive substance in the hole 255. In operation, when the light-emitting device 300 is electrically connected to an external power supply, the positive end and the negative end of the external power supply can be connected to the first block 2531 and the first block 2531 of the first electrode block 253 of the electrical connection board 25, respectively. The third block 2541 of the two electrode block 254 is in contact with each other and forms an electrical connection to make the light emitting diode element 13 emit light. In detail, the first electrode block 253 is electrically connected to the fourth block region 2542 through the conductive substance in the hole 255, and the fourth block region 2542 is in contact with and electrically connected to the first electrode pad 201 '', so an external power source The positive end may be electrically connected to the first electrode pad 201 ″. Similarly, the negative terminal of the external power source is electrically connected to the second electrode pad 202 "through the third block 2541. Because the positive and negative ends of the external power supply are electrically connected to the first electrode block 253 and the second electrode block 254, respectively, and the first electrode block 253 and the second electrode block 254 are located on the upper and lower surfaces 251 and 252 of the electrical connection plate 25, respectively Therefore, the external power sources are connected to different sides (the upper surface 251 and the lower surface 252) of the electrical connection board 25 but on the same side. Through the hole 255, the first electrode block 253 is electrically connected to the first electrode pad 201 '', so that the positive and negative ends of the external power source are electrically connected to the first electrode pad 201 '' and the second electrode pad 202 '', respectively. Connection , and the first electrode pad 201 "and the second electrode pad 202" are located on the surface 101 "above the carrier 10", therefore, the external power source is electrically connected to the same surface of the carrier 10 "(the upper surface 101) '') And on the same side. In another embodiment, the first electrode block and the second electrode block may also be designed to be located on the upper surface of the electrical connection plate, and holes are formed in the first electrode block and the second electrode block. Through the conductive substance in the hole, the first electrode block and the second electrode block are electrically connected to the first electrode pad and the second electrode pad. Therefore, the external power supply is connected to the same side (upper surface) and the same side of the electrical connection board.

It should be noted that a plurality of non-connected secondary electrode portions described in FIG. 5A can also be formed in FIGS. 2A, 3A, 4A to 4E. That is, in FIG. 2A, a secondary electrode portion is formed between the electrode blocks 2031; in FIG. 3A, a secondary electrode portion is formed between the first electrode section 2041 and a second electrode section 2042; and FIG. 4A In FIG. 4B, a secondary electrode portion is formed between the electrode blocks 2051. In FIG. 4B, a secondary electrode portion is formed between the first electrode strip-shaped region 2061 and a second electrode strip-shaped region 2062. In FIG. 4C, the first A secondary electrode portion is formed between the branch 20913 and the second branch 20922; a secondary electrode portion is formed between the third branch 31013 and the fourth branch 31023 in FIG. 4D; and a first electrode region 2071, A secondary electrode portion is formed between the second electrode region 2072 and the third electrode region 2073. The secondary electrode part is in contact with the light-emitting diode element but is not electrically connected, and is used to conduct heat generated by the light-emitting diode element to the outside (air). In another embodiment, the secondary electrode portion may be electrically connected to the light emitting diode element.

FIG. 7A shows a cross-sectional view of a light-emitting diode unit 1000 in one embodiment of the present invention, which can be applied to the light-emitting diode elements 11 in FIGS. 1A, 3A, 4A to 4F, 5A, 5D, and 6A. 12A, 12B, 13. The light emitting diode unit 1000 includes a substrate 7000, a first type semiconductor layer 7001, an active layer 7002, and a second type semiconductor layer 7003. The first type semiconductor layer 7001 and the second type semiconductor layer 7003 are, for example, cladding A cladding layer or a confinement layer can provide electrons and holes, respectively, so that the electrons and holes are combined in the active layer 7002 to emit light. A first conductive portion 7004 and a second conductive portion 7005 are formed on the second type semiconductor layer 7003 and the first type semiconductor layer 7001, respectively. The light emitting diode unit 1000 is a flip-chip light emitting diode. In another embodiment, the light emitting diode unit 1000 may further include a wavelength conversion substance (not shown) formed on the substrate 7000 to convert light generated by the active layer 7002. In another embodiment, the light-emitting diode unit 1000 does not include the substrate 7000 to form a thin film light-emitting diode structure. Therefore, a wavelength conversion substance (not shown) is directly formed on the first type. 7001 on the semiconductor layer. It should be noted that when the light-emitting diode unit 1000 is applied to the light-emitting diode elements 11, 12A, 12B, and 13 in Figures 1A, 3A, 4A to 4F, 5A, 5D, and 6A, the first conductive portion 7004 It may be the aforementioned first or second connection pad, and the second conductive portion 705 may be the aforementioned second or first connection pad. Therefore, the connection manner between the first (second) connection pad, the second (first) connection pad and the upper electrode or / and the lower electrode of the light-emitting diode elements 11, 12A, 12B, and 13 mentioned above, that is, It is a connection method formed by the first conductive portion 7004 and the second conductive portion 7005 and the upper electrode or / and the lower electrode. The light emitting diode unit 1000 may further include a protective layer 7006, which may be a transparent non-conductive substance with a high thermal conductivity (for example, a carbon-like diamond), and is formed and covered with the first type semiconductor layer 7001 and the second type semiconductor Layer 7003 and active layer 7002. Therefore, when applied to, for example, the light-emitting diode elements 12A, 12B, and 13 in FIGS. 5A and 6A, the protective layer 7006 may be in contact with the second electrode portions 2012 ', 3012', 2012 '' to connect the light-emitting diodes. The heat generated by the unit 1000 is conducted to the outside. Furthermore, the protective layer 7006 may also have a substance with high reflectivity (for example, titanium dioxide, silicon dioxide, or aluminum oxide).

FIG. 7B is a cross-sectional view of a light emitting diode unit 1001 according to another embodiment of the present invention. The structure of the light-emitting diode unit 1001 is similar to that of the light-emitting diode unit 1000, and it can also be applied to the light-emitting diode elements 11, 12A, 12B, and 13 in Figures 1A, 2A, 3A, 4A to 4F, 5A, and 6, And the same symbols, signs or components, devices or steps corresponding to them have similar or identical components, devices or steps. The light emitting diode unit 1001 may further include a reflective layer 7007 covering the first type semiconductor layer 7001, the second type semiconductor layer 7003, and the active layer 7002. Thereby, the light emitted from the active layer 7002 can be reflected toward the substrate 7000 side. The light-emitting diode unit 1001 may also include a protective layer 7006 formed on the reflective layer 7007, which may be a transparent non-conductive material with high thermal conductivity (such as a carbon-like diamond). When applied to, for example, FIGS. 5A and 6A, The light-emitting diode elements 12A, 12B, 13 and the protective layer 7006 may be in contact with the second electrode portions 2012 ', 3012', 2012 '' to conduct the heat generated by the light-emitting diode to the outside. The reflective layer 7007 can be an insulating material, such as: silicon oxide (SiO _x ), aluminum oxide (Al ₂ O ₃ ), titanium dioxide (TiO ₂ ), or a combination thereof.

FIG. 7C is a cross-sectional view of a light emitting diode unit 1002 according to another embodiment of the present invention. The light-emitting diode unit 1002 is similar in structure to the light-emitting diode unit 1000, and can also be applied to the light-emitting diode elements 11, 12A, 12B, and 13 in the figures 1A, 3A, 4A to 4F, 5A, 5D, and 6A. And the same symbols, signs or components, devices or steps corresponding to them have similar or identical components, devices or steps. The light emitting diode unit 1000 includes only one light emitting diode, and the light emitting diode unit 1002 includes a plurality of light emitting diodes formed on a common substrate 7010. The light-emitting diodes are physically separated from each other on the substrate 7010 and are electrically connected to each other by a wire structure 7015, such as series, parallel, series-parallel, etc., to facilitate high-voltage conditions (greater than one light-emitting diode). Body forward voltage (generally 3V), such as 6V, 12V, 24V, 36V, or 45V) operation. An insulating layer 7016 is formed between the light-emitting diode and the lead structure 7015 to prevent unnecessary electrical lines. In another embodiment, as shown in FIGS. 7A and 7B, the light-emitting diode unit 1002 may include a protective layer (not shown), which may be a transparent non-conductive substance with a high thermal conductivity (for example, a kind of (Carbon diamond) is formed and covers the first type semiconductor layer 7001, the second type semiconductor layer 7003, the active layer 7002, and the wire structure 7015. Alternatively, a reflective layer (not shown) covers the first type semiconductor layer 7001, the second type semiconductor layer 7003, and the active layer 7002, so that the light emitted by the active layer 7002 can be reflected toward the substrate 7010 side. Similarly, when applied to, for example, the light-emitting diode elements 12A, 12B, and 13 in FIGS. 5A and 6A, the protective layer 7006 may be in contact with the electrode portions 2012 ', 3012', 2012 '' to separate the light-emitting diodes. The heat generated is conducted to the outside world. It should be noted that the light emitting diode unit 1002 has only a first conductive portion 7004 ′ formed on the second type semiconductor layer 7003 of a light emitting diode, and a second conductive portion 7005 ′ is formed on another light emitting diode. On the first type semiconductor layer 7001 of the body. When the light-emitting diode unit 1002 is applied to the light-emitting diode elements 11, 12A, 12B, and 13 in FIGS. 1A, 3A, 4A to 4F, 5A, 5D, and 6A, the first conductive portion 7004 'may be the same as described above. The first or second connection pads and the second conductive portion 7005 'mentioned may be the aforementioned second or first connection pads. Therefore, the connection manner between the first (second) connection pad, the second (first) connection pad and the upper electrode or / and the lower electrode of the light-emitting diode elements 11, 12A, 12B, and 13 mentioned above, that is, It is a connection method formed by the first conductive portion 7004 'and the second conductive portion 7005' and the upper electrode or / and the lower electrode. Only by electrically connecting the first conductive portion 7004 'and the second conductive portion 7005' with an external power source, a plurality of light emitting diodes can be made to emit light. The reflective layer may be an insulating material, such as: silicon oxide (SiO _x ), aluminum oxide (Al ₂ O ₃ ), titanium dioxide (TiO ₂ ), or a combination thereof.

FIG. 7D shows a cross-sectional view of a light emitting diode unit 1003 in another embodiment of the present invention. The light-emitting diode unit 1003 is similar in structure to the light-emitting diode unit 1000, and can also be applied to the light-emitting diode elements 11, 12A, 12B, 13 in the figures 1A, 3A, 4A to 4F, 5A, 5D, and 6A. And the same symbols, signs or components, devices or steps corresponding to them have similar or identical components, devices or steps. The light emitting diode unit 1003 further includes a first enlarged electrode portion 7024 in contact with and electrically connected to the first conductive portion 7004; a second enlarged electrode portion 7025 in contact with and electrically connected to the second conductive portion 7005. Similarly, when the light-emitting diode unit 1003 is applied to the light-emitting diode elements 11, 12A, 12B, and 13 in FIGS. 1A, 3A, 4A-4F, 5A, 5D, and 6A, the first enlarged electrode portion 7024 may The aforementioned first (second) connection pad and the second enlarged electrode portion 7025 may be the aforementioned second (first) connection pad. Therefore, the connection manner between the first (second) connection pad, the second (first) connection pad and the upper electrode or / and the lower electrode of the light-emitting diode elements 11, 12A, 12B, and 13 mentioned above, that is, It is a connection method formed by the first enlarged electrode portion 7024 and the second enlarged electrode portion 7025 and the upper electrode and / or the lower electrode. The first enlarged electrode portion 7024 and the second enlarged electrode portion 7025 facilitate subsequent alignment processes.

FIG. 8A shows a cross-sectional view of a light-emitting diode unit 2000 in another embodiment of the present invention, and it can also be applied to the light-emitting diode element 11 in the figures 1A, 3A, 4A to 4F, 5A, 5D, and 6A. , 12A, 12B, 13. The light-emitting diode unit 2000 is similar to the light-emitting diode unit 1003, in which elements, devices, or steps corresponding to the same symbols or symbols have similar or identical elements, devices, or steps. The light emitting diode unit 2000 includes a substrate 7000, a first type semiconductor layer 7001, an active layer 7002, and a second type semiconductor layer 7003. The first type semiconductor layer 7001 and the second type semiconductor layer 7003 are, for example, cladding A cladding layer or a confinement layer can provide electrons and holes, respectively, so that the electrons and holes are combined in the active layer 7002 to emit light. A first conductive portion 7004 and a second conductive portion 7005 are formed on the second type semiconductor layer 7003 and the first type semiconductor layer 7001, respectively. The light-emitting diode unit 2000 is a flip-chip light-emitting diode. There is an aperture 7008 between the first conductive portion 7004 and the second conductive portion 7005, and the first conductive portion 7004 has an electrode contact surface 70041 and the second conductive portion 7005 has an electrode contact surface 70051; the electrode contact surface 70041 and the electrode contact surface 70051 lies at substantially the same horizontal plane. A transparent colloid covers the substrate 7000, the first type semiconductor layer 7001, the active layer 7002, and the second type semiconductor layer 7003 and fills the pores 7008 to form a first transparent structure 7026. In another embodiment, the transparent colloid does not completely fill the pores 7008. Therefore, air is formed between the first conductive portion 7004 and the second conductive portion 7005. The first transparent structure 7026 has a surface 70261, which is substantially flush with the electrode contact surfaces 70041, 70051. Next, a protective layer 7006 is formed on the surface of the first transparent structure 7026 and the first conductive portion 7004 and the second conductive portion 7005 are exposed. The first enlarged electrode portion 7024 and the second enlarged electrode portion 7025 are formed on the first conductive portion 7004 and the second conductive portion 7005, respectively, and are also formed on the protective layer 7006. The first enlarged electrode portion 7024 and the second enlarged electrode portion 7025 are electrically connected to the first conductive portion 7004 and the second conductive portion 7005, respectively. In this embodiment, one side 70241 of the first enlarged electrode part 7024 is not flush with one side 70061 of the protective layer 7006; the other side 70251 of the second enlarged electrode part 7025 is not aligned with the other of the protective layer 7006. The sides 70062 are flush. In another embodiment, one side 70241 of the first enlarged electrode portion 7024 may be flush with one side 70061 of the protective layer 7006; one side 70251 of the second enlarged electrode portion 7025 may be the other of the protective layer 7006. The sides 70062 are flush. The light emitting diode unit 2000 further includes a second transparent structure 7027 formed on the first transparent structure 7026. The first transparent structure 7026 may include epoxy resin (Epoxy), polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), SU8, acrylic resin (Acrylic Resin), and poly Methyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, alumina (Al ₂ O ₃ ), SINR, spin-on-glass (SOG). The second transparent structure 7027 includes Sapphire, Diamond, Glass, Epoxy, quartz, Acrylic Resin, SiO _X , and Alumina ( Al ₂ O ₃ ), zinc oxide (ZnO), or silicone. FIG. 8B shows a cross-sectional view of a light-emitting diode unit 2001 in another embodiment of the present invention, which can also be applied to the light-emitting diode elements 11 in FIGS. 1A, 3A, 4A to 4F, 5A, 5D, and 6A. , 12A, 12B, 13. The light-emitting diode unit 2001 is similar to the light-emitting diode unit 2000, in which the same symbols, or symbols, correspond to elements, devices, or steps that have similar or identical elements, devices, or steps. The light emitting diode unit 2000 series includes only one light emitting diode, but the light emitting diode unit 2001 series includes a plurality of light emitting diodes. In this embodiment, each light-emitting diode has its own substrate 7000. However, in other embodiments, as shown in FIG. 7C, a plurality of light-emitting diodes may be formed on a substrate together. The light-emitting diodes are electrically connected (series, parallel, or series-parallel) with a wire structure 7015 '. In this embodiment, the lead structure 7015 'is in contact with the second conductive portion 7005 of the light emitting diode and the first conductive portion 7004 of the adjacent light emitting diode and forms a series connection. The first transparent structure 7026 covers a plurality of light emitting diodes. It should be noted that when the light-emitting diode unit 2001 is applied to the light-emitting diode elements 11, 12A, 12B, and 13 in Figures 1A, 2A, 3A, 4A to 4F, 5A, 5D, and 6A, the first enlargement The electrode portion 7024 may be the aforementioned first (second) connection pad, and the second enlarged electrode portion 7025 may be the aforementioned second (first) connection pad. Therefore, the connection manner between the first (second) connection pad, the second (first) connection pad and the upper electrode or / and the lower electrode of the light-emitting diode elements 11, 12A, 12B, and 13 mentioned above, that is, It is a connection method formed by the first enlarged electrode portion 7024 and the second enlarged electrode portion 7025 and the upper electrode and / or the lower electrode. Only by electrically connecting the first enlarged electrode portion 7024 and the second enlarged electrode portion 7025 to an external power source, a plurality of light emitting diodes can be made to emit light. FIG. 8C shows a partial cross-sectional view of the light-emitting diode unit 2001 of FIG. 8B applied to the light-emitting device of FIG. 5A. In this embodiment, only one light-emitting diode unit 2001 is shown disposed on the carrier 10. The light-emitting diode unit 2001 includes four light-emitting diodes 12A1, 12A2, 12A3, and 12A4. The first connection pad 7024 of the light emitting diode unit 2001 only partially covers the first electrode portion 2011'A, and the second connection pad 7025 also partially covers the first electrode portion 2011'B. The lead structure 7015 'includes a plurality of secondary lead structures 70151', all of which are not in contact with the first electrode portions 2011'A, 2011'B. The first electrode portion 2011'A is only in contact with the light emitting diode 12A1, the second electrode portion 2012 'is in contact with the light emitting diodes 12A1, 12A2, 12A3, and 12A4, and the first electrode portion 2011'B is only in contact with the light emitting diode The bodies 12A4 are in contact. The first transparent structure 7026 only partially covers the first electrode portion 2011'A and the first electrode portion 2011'B, and completely covers the second electrode portion 2012 '. A protective layer 7006 is formed between the conductive wire structure 7015 'and the first transparent structure 7026. The lead structure 7015 'can be in contact with the electrode portion 2012' (3012 ') to conduct the heat generated by the light emitting diode unit 2001 to the outside. Similarly, the light-emitting diode unit 2001 can also be applied to the light-emitting diode element 13 in FIG. 6A. In this embodiment, the lead structure 7015 'includes a metal, such as gold, aluminum, copper, or platinum, and also forms an electrical connection with the electrode portion 2012' (3012 ', 2012 "). The lead structure 7015 'and the electrode portion 2012' (3012 ', 2012 ") may have the same shape or area. 5A and 8C (6A), the electrode portion 2012 '(3012', 2012 '') has three secondary electrode portions 20121 '(30121', 20121 ''), and the lead structure 7015 'has three secondary lead structures. 70151 ', that is, the number of secondary electrode portions corresponds to the number of secondary lead structures. In another embodiment, the area of the secondary lead structure 70151 'is smaller than the area of the corresponding secondary electrode.

The above-mentioned light-emitting diode units 1000, 1001, 1002, 2000, and 2001 can protect the light emitted by the light-emitting diode unit toward the substrate side because they have a protective layer and / or a reflective layer. The application is substantially one to five sides. Light emitting diode unit. When the light-emitting diode elements 11, 13 are only provided on the top surfaces 101, 101 '' of the carrier 10, 10 '' (as shown in Figures 1A, 3A, 4A to 4F, 6A), and the wavelength conversion layer is transparent The body 103 is formed on the light-emitting diode elements 11, 12A, 12B, 13 and at least partially transparent carriers. The light (for example, blue light) emitted by part of the light-emitting diode elements can be converted into a wavelength conversion layer (or a wavelength conversion substance) into Another light (for example: yellow light or yellow-green light), further blue light or mixed with yellow light (or yellow-green light) can be mixed into a white light. In another embodiment, a light-emitting diode unit may include a wavelength conversion substance to convert light emitted from the active layer. Therefore, the transparent body 103 may not include a wavelength conversion layer. Part of the generated white light can be scattered or reflected by the particles of the wavelength conversion layer (or wavelength conversion substance) and incident on the transparent carrier, so that the white light can be emitted not only from one side (upper surface) of the light emitting diode wafer placed on the transparent carrier, It can also be emitted from the side and the lower surface of the transparent carrier board, that is, white light can be emitted from each surface of the transparent carrier (six-sided light emission). In addition, a diffusing powder (eg, titanium dioxide) can be added to the wavelength conversion layer (or wavelength conversion substance) to enhance the effect of white light downward scattering. In short, according to this embodiment, a light source with non-uniform light emission (five-sided light emission) can be used to achieve the effect of approximately uniform light emission (six-sided light emission). Furthermore, the white light on one side (upper surface) of the light emitting diode wafer placed on the transparent carrier has a first average color temperature; the white light on the other side (lower surface) on the transparent carrier has a second average color temperature; The first average color temperature is greater than the second average color temperature, and the difference between the first average color temperature and the second average color temperature is not less than 50K and not more than 300K. In detail, the light-emitting device is placed on a black substrate so that its upper surface is facing up and electrically connected to an external power source. When the light-emitting device emits light, its color temperature is measured with an illuminance meter (such as UPRtek, model MK350) to obtain the first An average color temperature. Next, the lower surface of the light-emitting device faces upward and is electrically connected to an external power source. When the light-emitting device emits light, its color temperature is measured to obtain a second average color temperature. Alternatively, a color analyzer can be used to obtain the color temperature value of the white light emitted by the light emitting device at any point in space. For example, a light-emitting device is regarded as a center point, and the distribution of the color temperature of light in space is shown in FIG. 8D (0˚ ~ 360 且), and the space on the upper surface of the light-emitting device (where a light-emitting diode element is set) is defined. The angle is 0˚ ~ 180˚, and the space angle of the lower surface of the light-emitting device (without a light-emitting diode element) is 180˚ ~ 360˚; in the range of 0˚ ~ 180˚, a first color temperature can be obtained at any angle Point; in the range of 180˚ ~ 360˚, a second color temperature point can be obtained at any angle, the first color temperature point is greater than the second color temperature point, and the difference between the first color temperature point and the second color temperature point is not less than 50K and More than 300K. It can be seen from FIG. 8D that in the range of 210˚ to 225 以及 and the range of 315˚ to 330˚, the color temperature value has a higher color temperature than the range of 180˚ to 360˚. In addition, the average color temperature of the upper surface (0˚ to 180˚) of the light emitting device is greater than the average color temperature of the lower surface (180˚ to 360˚).

FIG. 9 is a cross-sectional view of a light-emitting device 400 according to another embodiment of the present invention. The light-emitting device 400 includes a transparent carrier 10 ''', a plurality of light-emitting diode units 1004 disposed on the carrier 10''', a first electrode pad 201 ''', and a second electrode pad 201'''. The light-emitting diode unit 1004 includes a substrate 140, a first-type semiconductor layer 141, an active layer 142, and a second-type semiconductor layer 143. The first-type semiconductor layer 141 and the second-type semiconductor layer 143 are, for example, cladding A cladding layer or a confinement layer can provide electrons and holes, respectively, so that the electrons and holes are combined in the active layer 142 to emit light. The light emitting diode unit 1004 further includes a first wiring pad 144 formed on the first type semiconductor layer 141; a second wiring pad 145 is formed on the second type semiconductor layer 143. The light-emitting diode unit 1004 further includes a reflective structure 146 formed between the substrate 140 and the carrier 10 '''to reflect the light emitted by the light-emitting diode unit 1004 toward the wire bonding pad side. Its application is essentially one Five-sided light-emitting diode unit. A bonding wire 147 connects the first wire bonding pad 144 and the adjacent second wire bonding pad 145 of the light emitting diode unit 1004 to form an electrical connection with each other in series. Furthermore, the bonding wire 147 is connected between the light emitting diode unit 1004 and a first electrode pad 201 ′ ″ and a second electrode pad 202 ′ ″. When the light-emitting device 400 is connected to an external power supply, the positive and negative ends of the external power supply may be electrically connected to the first electrode pad 201 ″ ′ and the second electrode pad 202 ″ ″ to make the light-emitting diodes The body unit 1004 emits light. Similarly, since the transparent body 103 (not shown) including the wavelength conversion layer can be formed on the light-emitting diode unit 1004 and at least a part of the transparent carrier 10 ''', the light emitted by the part of the light-emitting diode unit 1004 (for example: (Blue light) can be converted into another light (for example, yellow light) through the wavelength conversion layer, and further blue light or yellow light can be mixed into a white light. Part of the generated white light can be scattered or reflected by the particles of the wavelength conversion layer into the transparent carrier, so that the white light can be emitted not only from one side (upper surface) of the light emitting diode wafer placed on the transparent carrier, but also from the transparent carrier. The side surface and the lower surface are emitted, that is, white light can be emitted from each surface of the transparent carrier (six-sided light emission). In addition, a diffusing powder (eg, titanium dioxide) can be added to the wavelength conversion layer to enhance the effect of white light scattering downward. In short, through this embodiment, a non-uniform light source (five-sided light) can be used to achieve the effect of approximately uniform light (six-sided light). In another embodiment, a wavelength conversion substance may be directly contacted and formed on the second type semiconductor layer 143 to convert light emitted from the active layer, so the transparent body may not include a wavelength conversion layer. The reflective structure 146 may include a single layer or multiple layers, and its material may be conductive or insulating. The conductive material includes silver, aluminum, nickel, copper, gold, titanium, or a combination thereof. The insulating material includes epoxy, silicon oxide (SiO _x ), aluminum oxide (Al ₂ O ₃ ), titanium dioxide (TiO ₂ ), silicone, resin, or a combination of the foregoing materials.

It should be noted that, according to the actual application, the light emitted by the carriers 10, 10 ', 10''to the light emitting diode elements 11, 12A, 12B, 13 may be transparent or opaque. When the carrier is transparent, its material can be glass (refractive index is about 1.4 ~ 1.7), silicon carbide, diamond, epoxy, quartz, acrylic, silicon oxide (SiO _x ), aluminum oxide (Al ₂ O ₃ ), zinc oxide (ZnO), silicone (silicone), or a combination of the above materials. The glass may include Soda-Lime Glass, Alumino Silicate Glass, or low alkali glass. When the carrier is opaque, it may be a circuit board. The substrate material of the circuit board includes a metal, a thermoplastic material, a thermosetting material, or a ceramic material. Metals include aluminum, copper, and the like. The thermosetting material includes a phenolic resin (Phonetic), an epoxy resin (Epoxy), a bismaleimide triazine resin (Bismaleimide Triazine), or a combination thereof. The thermoplastic material includes polyimide resin, polytetrafluorethylene, and the like. Ceramic materials include alumina, aluminum nitride, silicon aluminum carbide, and the like. The upper electrode and the lower electrode may include gold, aluminum, copper, silver, or a combination thereof. In another implementation, the carrier may be a flexible material. The transparent body 103 may be transparent or translucent to the light emitted from the light emitting diode elements 11, 12A, 12B, and 13.

FIG. 10A shows a perspective view of a light emitting diode bulb 500 according to an embodiment of the present invention. The light-emitting diode bulb 500 includes a lamp cover 50, a light-emitting device 100, a circuit board 52, a heat sink 54, and an electrical connection 56. The light-emitting device 100 can be replaced by the light-emitting devices 200 and 300, and both can be applied to the light-emitting diode bulb 500. The light-emitting device 100 can be regarded as a light-emitting diode light bar and, when fixed on the circuit board 52, is electrically connected to the circuit board 52 using the same side but different sides of the carrier 10 (such as FIG. 1C); The electrical connection board 25 is electrically connected to the circuit board 52 on the same side and the same side of the carrier 10 (as shown in FIGS. 6A to 6E). The circuit board 52 is fixed on the heat sink 54. The heat sink 54 can help the heat generated by the light emitting device 100 to leave the light emitting diode element bulb 500 by conduction, convection or radiation. The electrical connector 56 is connected to the heat sink 54 and is also electrically connected to an external power source. In this embodiment, the light emitting devices 100 are disposed substantially vertically (z direction) on the circuit board 52 and arranged in a triangle (top view). In another embodiment, the light emitting device 100 can be arranged on the circuit board 52 in a rectangular, polygonal, or approximately circular top view. FIG. 10B is a top view of a light emitting device on a circuit board according to another embodiment of the present invention. The light emitting devices 100 are arranged in a quadrangular shape, and the upper surface 101 (the side where the light emitting diode element is provided) of the light emitting device faces the outside, and the lower surface 102 (the side where the light emitting diode element is not provided) faces each other. The light-emitting diode element bulb 501 further includes a light-emitting diode element 15, which is disposed inside the quadrangle formed by the light-emitting device 100 and is surrounded by the light-emitting device 100. The light emitted from the light-emitting diode element 15 is emitted substantially in the z direction (as shown in FIG. 10A). It should be noted that the light emitting device 100 may be a white light emitting device, and the light emitting diode element 15 may be red light. With this configuration, the color rendering of the light emitting diode bulb 500 can be improved (CRI≥90) Or color quality scale (CQS ≥ 85). The light emitting diode units 1000, 1001, 1002, 1003, 2000, and 2001 can all be applied as the light emitting diode element 15.

FIG. 11A shows a perspective view of a light emitting diode bulb 502 according to another embodiment of the present invention. Figure 11B shows a top view of Figure 11A. The light-emitting diode light bulb 502 is similar to the light-emitting diode light bulb 500, in which the same symbols, or symbols, correspond to elements, devices, or steps that have similar or identical elements, devices, or steps. The light emitting devices 100 are disposed on the circuit board 52 substantially vertically (in the z direction) and are arranged in a quadrangle (top view). The above-mentioned light emitting devices 200 and 300 can also be applied in this embodiment. In another embodiment, the light emitting devices can be arranged on the circuit board 52 in a rectangular, polygonal, or approximately circular top view. Referring to FIG. 11B, the light emitting devices 100A and 100B are arranged along a first direction (direction A) and are in a straight line; the width directions of the light emitting devices 100A and 100B are parallel to the first direction. The light emitting devices 100C and 100D are arranged along a second direction (direction B) and are in a straight line; the width directions of the light emitting devices 100C and 100D are parallel to the second direction. The first direction is approximately perpendicular to the second direction, but the present invention is not limited thereto, and the first direction may be at an angle to the second direction (for example, 30 degrees, 45 degrees, or 60 degrees). The upper surfaces 101 of the light-emitting devices 100A and 100B (with the light-emitting diode element side) respectively have a normal line system perpendicular to the first direction (direction A) but facing the opposite direction (shown by arrows); the light-emitting devices 100C and 100D The upper surface 101 (the side where the light-emitting diode element is provided) has a normal line system perpendicular to the second direction (direction B) but facing the opposite direction (as shown by the arrow). In addition, the light emitting directions of the light emitting devices 100A, 100B, 100C, and 100D (shown by arrows) can be roughly connected in a clockwise (or counterclockwise) direction; the upper surface 101 of the light emitting device 100A faces the lower surface 102 of the light emitting device 100D. . FIG. 11C shows a top view of a light emitting device on a circuit board according to another embodiment of the present invention. The difference from FIG. 11B is that it further includes a light-emitting diode element 15 disposed in the space adjacent to the light-emitting device 100; the light emitted by the light-emitting diode element 15 is roughly emitted in the z direction (as shown in FIG. Figure 10A). It should be noted that the light emitting device 100 may be a white light emitting device, and the light emitting diode element 15 may be red light emitting. With this configuration, the color rendering of the light emitting diode bulb may be improved (CRI≥90) or Color quality scale (CQS≥85).

FIG. 12 is a cross-sectional view of a light-emitting tube according to an embodiment of the present invention. The light-emitting tube includes a light-emitting device, a supporting base 80 and a casing 81. The light-emitting devices described above can be combined with each other and used in light-emitting tubes. In another implementation, the casing 81 is a flexible material. In this embodiment, the light-emitting devices in FIGS. 4C and 4D are taken as examples. The supporting base 80 includes a first clamping portion 801, a second clamping portion 802, and a through hole 803. The first clamping portion 801 and the second clamping portion 802 are separated from each other by a distance and define a space therein; a part of the light-emitting device passes through the space between the clamping portions 801 and 802 and passes through the through hole 803 to expose the upper electrode The pad 201 and the lower electrode pad 301 are used to be electrically connected to an external power source. The light-emitting device is tightly clamped by the clamping portions 801 and 802, so that the light-emitting device can be fixed on the carrier 80. In another embodiment, the space between the clamping portions 801 and 802 may be larger than the width of the light emitting device, and the clamping portions 801 and 802 do not directly contact the light emitting device. An adhesive body (not shown) is filled to fix the light emitting device on the carrier 80 more stably. The carrier 80 substantially divides the light emitting device into two sides, one side having the light emitting diode element 11 and the other side having only the upper electrode pad 201 and the lower electrode pad 301; the case 81 covers only one side having the light emitting diode element 11 However, the other side with the upper electrode pad 201 and the lower electrode pad 301 is not covered. In addition, the shortest distance (d2) between the housing 81 and the light-emitting device is less than 2 mm, which can effectively transfer the heat generated by the light-emitting device through the housing to the outside (air). Alternatively, a filler is filled between the casing 81 and the light-emitting device, and the filler may include a transparent glue, a wavelength conversion layer, or a diffusion powder (not shown). The filling material is in contact with the light-emitting device, so it can help the heat generated by the light-emitting device to be transmitted to the filling material, and then to the outside (air). In addition, due to the filler, the light-emitting device has a better hot / cold ratio. In detail, when the light-emitting device is electrically connected to an external power source, the light-emitting device is in the initial light-emitting state, and a cold-state light-emitting efficiency (luminous flux / wattage) can be measured; then, the light-emitting efficiency is measured at intervals For example, 30ms), when the luminous efficiency value measured between two adjacent measurements is less than 0.5%, the luminous efficiency value of the latter is defined as a hot state luminous efficiency; / cold ratio) is the ratio of the hot state luminous efficiency to the cold state luminous efficiency. In this embodiment, there is a filler between the light-emitting device and the casing, and the heat-to-cool ratio of the light-emitting device is R ₁ ; without a filler between the light-emitting device and the casing, the heat-to-cool ratio of the light-emitting device is R ₂ ; The difference between R ₁ and R ₂ is greater than 20%. The material of the adhesive body can be the same as the transparent glue. The housing 81 includes diamond, glass, epoxy, quartz, acrylic resin, silicon oxide (SiO _x ), aluminum oxide (Al ₂ O ₃ ), and oxidation. Zinc (ZnO) or Silicone (Slicone). Transparent glue includes epoxy (epoxy), polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), SU8, acrylic resin (Acrylic Resin), polymethacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, alumina (Al ₂ O ₃ ) , SINR, spin-on-glass (SOG).

Figures 12A ~ 12C show the flow chart for making the light-emitting tube of Figure 12. Referring to FIG. 12A, a carrier 10 is provided and a light emitting diode element 11 is provided on the upper surface 101 and the lower surface 102 of the carrier 10 to form a light emitting device. Referring to FIG. 12B, a hollow casing 81 is provided and a transparent glue 811 (which may include a wavelength conversion layer and / or a diffusion powder) is filled in the casing 81. Referring to FIG. 12C, a part of the light-emitting device is embedded in the transparent glue 811. It should be noted that during the embedding step, bubbles may be generated, so a defoaming step may be performed to remove the bubbles. Or, the air bubbles are not completely removed, so there will be air bubbles in the transparent glue 811. Then, the transparent glue 811 can be cured by heating or light. Optionally, before the curing step, a supporting base can be provided, and the light-emitting device can be passed through the through hole of the supporting base and fixed on the supporting base (as shown in FIG. 12), thereby having a light-emitting diode element. One side of the light-emitting device of 11 can be completely sealed in the casing 81, and the upper electrode pad 201 and the lower electrode pad 301 are exposed to be electrically connected to an external power source.

13A to 13D show a flowchart of manufacturing a light emitting device 600 according to an embodiment of the present invention. The light-emitting device 600 is similar to the light-emitting device 100, in which elements, devices, or steps corresponding to the same symbols or signs have similar or identical elements, devices, or steps. 13A and 13B, a carrier 10 is provided, and an upper electrode 20, a lower electrode 30, and a temporary electrode 220 are formed on the carrier 10 by using a printed circuit board technology. A hole 221 is formed and a conductive substance is completely or partially filled therein to electrically connect the upper electrode 20 and the lower electrode 30. The temporary electrode 220 may form an electrical connection with the upper electrode 20. Further, a cutting line 222 is formed on the lower surface 102 of the carrier at a position corresponding to the position of the temporary electrode 220. The light emitting diode element 11 is disposed on the upper electrode 20 (or the lower electrode, as shown in FIG. 5A). The light-emitting diode element 11 fixed on the carrier 10 may include surface mounted technology or wire bonding. 13C and 13D, a first transparent layer 1032 is covered thereon along the outline of the light-emitting diode element 11; a wavelength conversion layer 1033 is covered thereon along the outline of the first transparent layer 1032; then, a The second transparent layer 1034 covers the wavelength conversion layer 1033 but does not have the same contour as the wavelength conversion layer 1033. During the testing process, the positive and negative ends of the external power supply can be electrically connected to the upper electrode 20 and the temporary electrode 220 respectively to make the light-emitting diode element 11 emit light. After that, the temporary electrode 220 and a part of the carrier 10 are removed along the cutting line 222. In this embodiment, the temporary electrode 220 may be removed by a method such as cleavage, laser cutting, diamond knife cutting, or the like. Because the temporary electrode 220 is removed by using the above method, the side 121 of the carrier 10 has a rough, uneven, or irregular surface. In contrast, the other side 122 of the carrier 10 has a flat surface. In short, the side edge 121 and the other side edge 122 have different roughnesses. The wavelength conversion layer 1033 may include a single layer or multiple layers. FIG. 13E is a side view (X direction) of FIG. 13D. The light-emitting diode element 11 has a height (H ₂ ), and the maximum distance between the second transparent layer 1034 and the carrier 10 is H ₁ , H ₂ ≥ 0.5H ₁ . It should be noted that when the light-emitting diode element 11 includes a first transparent structure (such as the light-emitting diode unit 2000 or 2001 shown in FIG. 8A or 8B), and the material of the first transparent structure 7026 is the same as the first When the materials of the transparent layer 1032 are the same, the interface between them is not obvious under the irradiation of the electron microscope, or no interface exists between the first transparent structure 7026 and the first transparent layer 1032.

When the light-emitting device described above is applied to AC or DC power supply 120V, the voltage of the light-emitting device can be designed at 140V ± 10%; when it is applied to AC or DC power supply 100V, the voltage of the light-emitting device can be designed at 115V ± 10 %; And when applied to AC or DC power supply 220V, the voltage of its light-emitting device can be designed at 280V ± 10%. The AC power is passed through a rectifier to form a DC power. Furthermore, the light-emitting device can also be applied to a DC power source (such as a battery) that is substantially constant voltage, and the voltage of the light-emitting device can be designed to be less than 15V. In addition, a plurality of the light-emitting devices described above may be disposed on a carrier, and the light-emitting devices may be connected in series, parallel, or series-parallel to increase their applicability. In addition, the light-emitting device or light-emitting tube described above can also be applied to a U-shaped bulb, a spiral tube bulb, a bulb lamp, or a candle lamp.

It should be understood that, in addition to the light-emitting diode units described in the present invention (as shown in FIGS. 7A to 7D and 8A to 8B), the light-emitting diode elements of the present invention can be applied. For example: 3014 or 5630 packages) can also be used as the light-emitting diode device of the present invention.

It should be understood that the above-mentioned embodiments of the present invention can be combined or replaced with each other where appropriate, instead of being limited to the specific embodiments described. The embodiments listed in the present invention are only used to illustrate the present invention and are not intended to limit the scope of the present invention. Any obvious modifications or changes made by anyone to the present invention can be made without departing from the spirit and scope of the present invention.

100, 100A, 100B, 100C, 100D, 200, 300, 400, 600‧‧‧ light-emitting devices

1000, 1001, 1002, 2000, 2001, 1004‧‧‧‧ light-emitting diode units

10, 10 ', 10' ', 10' '' ‧‧‧ carrier

101, 101 ', 101``‧‧‧ Top surface

102, 102 ', 102``‧‧‧ lower surface

103‧‧‧Transparent

1031‧‧‧ Top surface

1032‧‧‧The first transparent layer

1033‧‧‧wavelength conversion layer

1034‧‧‧Second transparent layer

11, 11A, 11B, 11C, 11D, 11E, 11F, 11G‧‧‧ light-emitting diode elements

12A ,, 12A1, 12A2, 12A3, 12A4, 12B, 13, 15‧‧‧ light-emitting diode elements

111, 111C, 111D, 111E, 111F, 111G‧‧‧The first connection pad

113, 113C, 113D, 113E, 113F, 113G‧‧‧Second connection pad

144‧‧‧First wire pad

145‧‧‧Second wire pad

146‧‧‧Reflective structure

147‧‧‧welding wire

20, 20 ', 20``‧‧‧ Upper electrode

201, 202, 201'‧‧‧ upper electrode pad

201 '' '‧‧‧First electrode pad

202 '' '‧‧‧Second electrode pad

2011 ', 2011'A, 2011'B, 2011''‧‧‧First electrode section

2012 ', 2012''‧‧‧Second electrode section

20121 ', 30121', 20121''‧‧‧ secondary electrode unit

2013``‧‧‧Third electrode section

2014''‧‧‧Bending part

203, 204, 205, 206, 207‧‧‧ Upper electrode lead

2031, 2051‧‧‧ electrode block

2032, 2052‧‧‧ First end

2033, 2053 ‧‧‧ second end

2041, 2041A, 2042B‧‧‧ first electrode section

2042, 2042A‧‧‧Second electrode section

2061‧‧‧First electrode strip

2062‧‧‧Second electrode strip

2071‧‧‧First electrode area

2072, 2072A, 2072B, 2072C‧‧‧Second electrode area

2073‧‧‧Third electrode area

208‧‧‧Conductive connection line

209‧‧‧upper electrode lead

2091‧‧‧First electrode strip

20911‧‧‧ Zone 1

20912‧‧‧First bar

20913‧‧‧First branch

2092‧‧‧Second electrode strip

20921‧‧‧The second bar

20922‧‧‧Second branch

211, 212, 221‧‧‧ holes

220‧‧‧Temporary electrode

222‧‧‧cut line

25‧‧‧electric connection board

250‧‧‧ Carrier Board

251‧‧‧upper surface

252‧‧‧ lower surface

253‧‧‧First electrode block

2531‧‧‧First block

2532‧‧‧Second Block

254‧‧‧Second electrode block

2541‧‧‧The third block

2542‧‧‧Fourth Block

255‧‧‧ Hole

30, 30'‧‧‧ bottom electrode

301, 302, 301'‧‧‧ bottom electrode pads

303‧‧‧Lower electrode lead

3011'‧‧‧ Third electrode section

3012'‧‧‧ Fourth electrode section

310‧‧‧ Lower electrode lead

3101‧‧‧Third electrode strip

31011‧‧‧Second Zone

31012‧‧‧The third bar

31013‧‧‧Third branch

3102‧‧‧Fourth electrode strip

31021 ‧ ‧ ‧ third zone

31022‧‧‧ Fourth bar

31023‧‧‧ Fourth branch

35‧‧‧Fence

500, 501, 502‧‧‧ bulbs

50‧‧‧ Lampshade

52‧‧‧Circuit Board

54‧‧‧ heat sink

56‧‧‧Electrical connection

7000, 7010, 140‧‧‧ substrate

7001, 141‧‧‧ the first type semiconductor layer

7002, 142‧‧‧ active layer

7003, 143‧‧‧Second type semiconductor layer

7004, 7004'‧‧‧ first conductive part

7005, 7005'‧‧‧ second conductive part

70041, 70051‧‧‧ electrode contact surface

7006‧‧‧ Protective layer

7007‧‧‧Reflective layer

7008‧‧‧ Pore

7015, 7015'‧‧‧ wire structure

70151'‧‧‧times lead structure

7016‧‧‧Insulation

7024‧‧‧The first enlarged electrode section

70241, 70251, 70061, 70062‧‧‧

7025‧‧‧Second enlarged electrode section

7026‧‧‧First transparent structure

70261‧‧‧ surface

7027‧‧‧Second transparent structure

80‧‧‧carrying plate

801‧‧‧First clamping section 802‧‧‧Second clamping section

803‧‧‧through hole

81‧‧‧shell

FIG. 1A is a perspective view of a light emitting diode device according to an embodiment of the present invention.

FIG. 1B is a perspective view of a light emitting diode device according to an embodiment of the present invention.

FIG. 1C is a perspective view of a light-emitting device according to another embodiment of the present invention, showing a conductive connection line formed on a side of a carrier.

FIG. 2A is a top view of a light emitting device according to an embodiment of the present invention.

Fig. 2B is a cross-sectional view taken along II-I 'in Fig. 2A.

FIG. 3A is a top view of a light emitting device according to another embodiment of the present invention, showing a conductive connection line formed on a side of a carrier.

Figure 3B is a sectional view of Figure 2A along II-II '.

FIG. 4A is a top view of a light emitting device according to another embodiment of the present invention.

FIG. 4B is a top view of a light emitting device according to another embodiment of the present invention.

FIG. 4C is a top view of a light emitting device according to another embodiment of the present invention.

Fig. 4D is a bottom view of the light emitting device in Fig. 4C.

FIG. 4E is a top view of a light emitting diode device according to another embodiment of the present invention.

FIG. 4F is a top view of a light emitting diode device according to another embodiment of the present invention.

Figure 4G is the equivalent circuit diagram of Figure 4F.

FIG. 5A is a cross-sectional view of a light emitting diode device according to another embodiment of the present invention.

FIG. 5B is a top view of a light emitting diode device according to another embodiment of the present invention.

FIG. 5C is a bottom view of a light emitting diode device according to another embodiment of the present invention.

FIG. 5D is a cross-sectional view of a light emitting diode device according to another embodiment of the present invention.

Figure 5E is a top view of Figure 5D.

6A and 6B are cross-sectional views of a light emitting device according to another embodiment of the present invention.

FIG. 6C is a top view of a light emitting device according to another embodiment of the present invention.

6D and 6E are top and bottom views of an electrical connection board of a light emitting device according to another embodiment of the present invention.

FIG. 7A is a cross-sectional view of a light emitting diode device according to an embodiment of the present invention.

FIG. 7B is a cross-sectional view of another light emitting diode device according to an embodiment of the present invention.

FIG. 7C is a cross-sectional view of another light emitting diode device according to an embodiment of the present invention.

FIG. 7D is a cross-sectional view of another light emitting diode device according to an embodiment of the present invention.

FIG. 8A is a cross-sectional view of another light emitting diode device according to an embodiment of the present invention.

FIG. 8B is a cross-sectional view of another light emitting diode device according to an embodiment of the present invention.

FIG. 8C shows a partial cross-sectional view of the light-emitting diode element of FIG. 8B applied to the light-emitting device of FIG. 5A.

FIG. 8D is a perspective view of a light emitting device according to an embodiment of the present invention.

FIG. 9 is a cross-sectional view of a light emitting device according to another embodiment of the present invention.

FIG. 10A is a perspective view of a light-emitting diode light bulb according to an embodiment of the present invention.

FIG. 10B is a top view of a light emitting device on a circuit board according to another embodiment of the present invention.

FIG. 11A shows a perspective view of a light-emitting diode bulb according to another embodiment of the present invention.

Figure 11B shows a top view of Figure 11A.

FIG. 11C shows a top view of a light emitting device on a circuit board according to another embodiment of the present invention.

FIG. 12 is a cross-sectional view of a light-emitting tube according to an embodiment of the present invention.

Figures 12A, 12B, and 12C show a flowchart of manufacturing the light-emitting tube of Figure 12.

13A, 13B, 13C, and 13D are cross-sectional views showing a process of manufacturing a light emitting device according to an embodiment of the present invention.

FIG. 13E shows a cross-sectional view of the light emitting device in FIG. 13D.

Claims (10)

A light emitting device includes: a first electrode bar having a first long bar and a plurality of first branches; a second electrode bar not directly connected to the first electrode bar and having a second long bar and a plurality of first branches; A second branch; and a plurality of first light emitting diode elements, each of the plurality of first light emitting diode elements being electrically connected to one of the plurality of first branches and one of the plurality of second branches, wherein The extending direction of the first strip is different from the extending direction of the plurality of first branches, and the extending direction of the second strip is different from the extending direction of the plurality of second branches. The light-emitting device according to item 1 of the scope of patent application, wherein the first strip and the second strip are parallel to each other. The light-emitting device according to item 1 of the scope of patent application, wherein the plurality of first branches and the plurality of second branches are staggered with each other. The light-emitting device according to item 1 of the scope of patent application, further comprising a third electrode strip electrically connected to the second electrode strip, and having a third strip and a plurality of third branches, an extension of the third strip. The direction is different from the extending direction of the plurality of third branches. The light-emitting device described in item 4 of the scope of patent application, further includes a fourth electrode bar that is not directly connected to the third electrode bar, and has a fourth strip and a plurality of fourth branches. The extending direction is different from the extending direction of the plurality of fourth branches. The light-emitting device according to item 5 of the scope of patent application, further comprising a plurality of second light-emitting diode elements, each of the plurality of second light-emitting diode elements and one of the plurality of third branches and the plurality of One of the fourth branches is electrically connected. The light-emitting device according to item 4 of the scope of patent application, further includes a conductive substance, which electrically connects the third electrode strip and the second electrode strip. The light-emitting device according to item 1 of the scope of patent application, wherein at least one of the plurality of first light-emitting diode elements is a flip-chip light-emitting diode. The light-emitting device according to item 1 of the patent application scope further includes a carrier having a first surface and a second surface opposite to the first surface, and the plurality of first light-emitting diode elements are located on the first surface. on. The light-emitting device according to item 1 of the scope of patent application, further includes a wavelength conversion substance covering the plurality of first light-emitting diode elements.