TWI667805B - Method for reducing the resistance of metal oxide semiconductor and making the quantum battery therefrom - Google Patents

Abstract

The present invention provides a method for reducing the resistance of a metal oxide semiconductor, comprising: providing a negative voltage to a conductive substrate deposited with a metal oxide semiconductor layer and fixed to a cathode in an electrolyte solution containing a metal ion So that the metal ions are implanted into the metal oxide semiconductor layer. The metal ion is selected from the group consisting of an alkali metal ion, an alkaline earth metal ion, and a combination of the foregoing metal ions. The present invention also provides a method of fabricating a quantum battery by the above method.

Description

Method for reducing resistance of metal oxide semiconductor and method for preparing same

The present invention relates to a method for reducing the resistance of a semiconductor, and more particularly to a method for reducing the resistance of a metal oxide semiconductor and a method for fabricating the same.

Referring to FIG. 1, US Pat. No. 2013/0276878 A1 (hereinafter referred to as a prior) discloses a quantum battery 9 comprising a glass substrate 91 and a first indium tin oxide (hereinafter referred to as ITO) formed on the glass substrate 91. An electrode 92, an n-type metal oxide semiconductor layer 93 formed on the first ITO electrode 92, a charging layer 94 formed on the n-type metal oxide semiconductor layer 93, and a charging layer 94 formed on the charging layer 94. A p-type metal oxide semiconductor layer 95, and a second ITO electrode 96 formed on the p-type metal oxide semiconductor layer 95. The n-type metal oxide semiconductor layer 93 may be composed of titanium oxide (TiO ₂ ), tin dioxide (SnO ₂ ) or zinc oxide (ZnO); the p-type metal oxide semiconductor layer 95 may be made of nickel monoxide ( NiO) or copper iron ore type copper aluminum oxide (CuAlO ₂ ).

The charging layer 94 is also disclosed in the prior art, which first mixes and agitates a composition containing an aliphatic acid titanium and a silicone oil in a solvent to form a coating solution; The coating solution is spin coated on the n-type metal oxide semiconductor layer 93 to form a coating layer having a thickness of about 0.3 μm to 1 μm; subsequently, the coating is dried at a temperature of 50 ̊C. a layer; further annealing the n-type metal oxide semiconductor layer 93 at a temperature of 300 ̊C to 400 ̊C and firing the dried coating layer for 10 minutes to 1 hour, thereby The resistance of the n-type metal oxide semiconductor layer 93 is lowered and the fatty acid titanium and the eucalyptus oil are decomposed to form a charging layer 94 as shown in FIG. 2, and the charging layer 94 has a plurality of titanium oxide particles 941 and a coating of each of the titanium oxide particles 941. The insulating film 942 of the silicone has the charging layer 94 having a core-shell structure. Finally, the charging layer 94 is illuminated by ultraviolet light to excite the carriers in each of the titanium dioxide particles 941.

Although the method disclosed in the prior art 1 can lower the resistance of the n-type metal oxide semiconductor layer 93 and produce the charging layer 94. However, the n-type metal oxide semiconductor layer 93 and the charging layer 94 must be simultaneously annealed and fired at a high temperature of 300 ̊C to 400 ̊C, and the first ITO electrode 92 is affected by high temperature to cause sheet resistance. The improvement is not only due to the high temperature process, but also the production process is very cumbersome. Further, the fatty acid titanium mixed with eucalyptus oil is subjected to high-temperature firing to thermally crack the fatty acid titanium into the titanium oxide fine particles 941, and the eucalyptus oil is reacted into an insulating film 942 of the cerium resin to coat the titanium oxide fine particles 941, and the insulating film thereof. 942 is liable to cause unevenness in thickness so that the problem of not completely coating the titanium oxide fine particles 941 occurs, and the stability of the performance of the element is lowered.

As can be seen from the above description, reducing the resistance of the metal oxide semiconductor to reduce the internal resistance of the quantum battery and simplifying the manufacturing method of the quantum battery to reduce the manufacturing cost is a subject to be solved by those skilled in the related art of the present invention.

Accordingly, it is an object of the present invention to provide a method of reducing the resistance of a metal oxide semiconductor.

Another object of the present invention is to provide a method of fabricating a quantum cell having a low internal resistance.

Thus, the method of the present invention for reducing the resistance of a metal oxide semiconductor comprises: providing a conductive substrate having a metal oxide layer deposited on a conductive substrate fixed to a cathode in an electrolyte solution containing a metal ion A negative voltage is applied to implant the metal ions into the metal oxide semiconductor layer. The metal ion is selected from the group consisting of alkali metal ions, alkaline earth metal ions, and a combination of the foregoing metal ions.

In addition, the method for fabricating a low internal resistance quantum cell of the present invention comprises: (a) depositing a first electrode type metal oxide semiconductor layer on a first conductive substrate to thereby obtain a first electrode unit; b) depositing a metal oxide semiconductor layer opposite to the first pole type of the first pole type on a second conductive substrate to thereby obtain a second electrode unit; (c) the first pole type At least one of the metal oxide semiconductor layer and the second-type metal oxide semiconductor layer is subjected to a method of reducing the resistance of the metal oxide semiconductor as described above; (d) formulating a compound containing a plurality of inorganic oxides a slurry of the powder, each inorganic oxide powder comprising an n-type metal oxide particle and an insulating oxide layer covering the n-type metal oxide particle; (e) after the step (c), at the first Coating the slurry on the metal oxide semiconductor layer of the electrode unit and the metal oxide semiconductor layer of the second electrode unit to obtain a slurry film, respectively; (f) drying the slurry film to obtain two precursors Film (g) film of the precursor film Such pre-shaped and after (h) engaging such preform via bonding film in order to make the film into a charging layer and thus obtain a low internal resistance of the quantum battery; thereby obtaining two pre-shaped film.

The effect of the present invention is that the conductive substrate on which the metal oxide semiconductor layer is formed is fixed on the cathode in the electrolyte solution, and the negative voltage is applied to move the metal ions in the electrolyte solution toward the cathode to inject the metal oxide. The semiconductor layer reduces the resistance of the semiconductor layer, and simplifies the process and cost by omitting the steps of high-temperature thermal annealing and firing, thereby reducing the internal resistance of the quantum battery.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals. <Detailed Description of the Invention>

An embodiment of the method for fabricating a low internal resistance quantum cell of the present invention comprises: (a) depositing a first electrode type metal oxide semiconductor layer 12 on a first conductive substrate 11 to thereby obtain a first Electrode unit 1 (see FIG. 3); (b) depositing a second oxide-type metal oxide semiconductor layer 22 opposite to the first-pole type on a second conductive substrate 21, thereby producing a second Electrode unit 2 (see FIG. 4); (c) performing a reduced metal oxide on at least one of the first-pole metal oxide semiconductor layer 12 and the second-pole metal oxide semiconductor layer 22 a method for resisting a semiconductor (see FIG. 5); (d) formulating a slurry containing water, a polyalkoxylated polyol (also referred to as a polyalkoxy polyol), and a plurality of inorganic oxide powders 31 Slurry 3d, the polyalkoxy copolymer contains at least a hydrophilic segment and a hydrophobic segment, and each inorganic oxide powder 31 includes an n-type metal oxide particle 311 and a coating. An insulating oxide layer 312 of the n-type metal oxide particles 311 (see FIG. 6); (e) in the step (c) The slurry 3d is coated on the metal oxide semiconductor layer 12 of the first electrode unit 1 and the metal oxide semiconductor layer 22 of the second electrode unit 2, respectively, to obtain a slurry film 3e (see FIG. 7); (f) drying the slurry film 3e to obtain two precursor films 3f (see FIG. 8); (g) illuminating the precursor film 3f to obtain two pre-shaped films 3g (see FIG. 9); And (h) joining the pre-formed films 3g so that the bonded pre-formed films 3g become a charging layer 3, and thereby producing a low internal resistance quantum cell (see FIG. 10).

Referring to FIG. 3 and FIG. 4, the first electrode type metal oxide semiconductor layer 12 which is suitable for use in the present invention is made of a metal oxide semiconductor composed of the group consisting of tungsten trioxide (WO _{3 ).} ), titanium dioxide (TiO ₂ ), vanadium pentoxide (V ₂ O ₅ ), tin dioxide (SnO ₂ ), and zirconia (ZrO). In this embodiment of the invention, the first-pole metal oxide semiconductor layer 12 is an n-type metal oxide semiconductor layer made of tungsten trioxide (WO ₃ ); the second-pole metal oxide The semiconductor layer 22 is a p-type metal oxide semiconductor layer made of nickel oxide (NiO). Also. The first conductive substrate 11 of the first electrode unit 1 of the step (a) has a lower glass plate 111 and a lower ITO layer 112 formed on the lower glass plate 111, and the second electrode unit 2 of the step (b) The second conductive substrate 21 has an upper glass plate 211 and an upper ITO layer 212 formed on the upper glass plate 211. The first conductive substrate 11 and the second conductive substrate 21 of the present invention are not limited to the use of the above ITO as a conductive layer, as long as it is a transparent conductive material having a sheet resistance of 1 Ω/unit area or less, such as graphene or Aluminum-doped zinc oxide (AZO) may be substituted for the above ITO layers 112, 212.

Referring to FIG. 5, the method for reducing the resistance of the metal oxide semiconductor implemented in the step (c) is to pass through a power supply 8 electrically connected to an anode 9 in an electrolyte solution 6 containing a metal ion. The second electrode type metal oxide semiconductor layer 22 is deposited and provided on the first conductive substrate 21 of the cathode 7 to provide a negative voltage to inject the metal ions into the second electrode type metal oxide semiconductor layer. 22 in. Suitable for use in the present invention are metal ions selected from the group consisting of alkali metal ions, alkaline earth metal ions, and a combination of the foregoing metal ions.

Preferably, the alkali metal ion is selected from the group consisting of lithium (Li), sodium (Na), potassium (K), and a combination of the foregoing metal ions; the alkaline earth metal ion is selected from the group consisting of A group consisting of beryllium (Be), magnesium (Mg), and a combination of the foregoing metal ions. More preferably, the electrolyte solution 6 is obtained by mixing a metal salt containing the metal ion with a polar solvent. In this embodiment of the invention, the metal salt is lithium perchlorate (hereinafter referred to as LiClO ₄ ); the polar solvent is propylene carbonate (hereinafter referred to as C ₄ H ₆ O ₃ ). The weight percentage of the metal salt in the electrolyte solution 6 is between 1.7 wt% and its saturated concentration, based on the weight percentage (wt%) of the electrolyte solution 6.

It should be additionally noted here that (see FIG. 6 again), the hydrophilic segment in the polyalkoxy copolymer described in the step (d) of the embodiment of the present invention is used to bind the water in the slurry 3d, and The hydrophobic section in the polyalkoxy copolymer is used to bind the inorganic oxide powder 31 in the slurry 3d. Therefore, the polyalkoxy copolymer of the step (d) is one selected from the group consisting of a diblock copolymer and a triblock copolymer; the n-type metal of the step (d) The oxide particles 311 are selected from titanium oxide particles, tin oxide particles or zinc oxide particles (ZnO); the insulating oxide layer 312 of the step (d) is made of cerium oxide (SiO ₂ ) or aluminum oxide (Al ₂ O ₃ ) Composition.

The polyalkoxy-based copolymer suitable for the step (d) of this embodiment of the present invention is a three-stage copolymer; the n-type metal oxide particles 311 of the step (d) are titanium oxide particles; the step (d) The insulating oxide layer 312 is composed of yttrium oxide. In this embodiment of the invention, the three-stage copolymer (ie, polyalkoxy polyol) is a polyoxyethylene polyoxyethylene copolymer [(poly(ethylene glycol)-block-poly(propylene glycol)-block- (poly(ethylene glycol); hereinafter referred to as PEG-PPG-PEG]. This embodiment of the present invention is exemplified by PEG-PPG-PEG, but is not limited thereto.

Preferably, the content of water is between 68.5 wt% and 78.5 wt%, and the content of the polyalkoxy copolymer is between 20.0 wt% and 30.0, based on the weight percent (wt%) of the slurry 3d. Between wt%, and the content of the inorganic oxide powders 31 is between 1.5 wt% and 3.0 wt%. Further, the inorganic oxide powder 31 which is suitable for use in this embodiment of the present invention is a composite using a core-shell structure having a composition of SiO ₂ (between 5 wt% and 15 wt%) / TiO ₂ (between 95 wt% and 85 wt%). Hydrophobic powder. In other words, the higher the SiO ₂ content in each of the inorganic oxide powders 31 means that the particle diameter of the n-type metal oxide particles 311 of each of the inorganic oxide powders 31 is smaller, and the thickness of the insulating oxide layer 312 is higher. thick. In this embodiment of the invention, the particle size of the inorganic oxide powder 31 is between 10 nm and 50 nm.

Preferably, (see FIG. 7 again), the slurry film 3e of the step (e) is applied to the first-pole metal oxide semiconductor by spin coating at a rotational speed of 500 rpm to 2000 rpm. The layer 12 is on the second electrode type metal oxide semiconductor layer 22.

Preferably (refer to FIG. 7, FIG. 8 and FIG. 9 again), the step (f) is to bake the slurry film 3e through a furnace tube 4 at a temperature of between 100 ̊C and 200 ̊C. The slurry film 3e becomes the precursor film 3f; the step (g) illuminates the precursor film 3f with an ultraviolet light 5 to obtain the pre-shaped film 3g.

In the detailed description of the method for fabricating the above embodiments, it is only necessary to apply an electrochemical treatment to the second-pole metal oxide semiconductor layer 22 in the electrolyte solution 6 to cause metal ions toward the cathode 7 . Moving and injecting into the second-type metal oxide semiconductor layer 22, thereby lowering the resistance of the second-type metal oxide semiconductor layer 22; further, it is only necessary to apply 100 对该 to the slurry film 3e. Drying from C to 200 ̊C does not require annealing and firing above 300 ̊C as in the previous case. In terms of the process, the present method is simplified relative to the preparation method of the previous case, and the inorganic oxide powder 31 itself is insulated by the n-type metal oxide particles (TiO ₂ particles) 311 and the n-type metal oxide particles 311 coated thereon. The oxide layer (SiO ₂ ) 312 is formed, and the film thickness thereof is easily controlled with respect to the prior case. In the present invention, the metal oxide ions of the second-pole type metal oxide semiconductor layer 22 of the embodiment are implanted with metal ions, and the resistance value is lowered, and the film thickness of the charging layer 3 is easy. Control, it is also stable during charging and discharging. The results of the electrical tests related to the present invention are described later. <Starting raw materials and analytical equipment used>

LiClO ₄ is a product of the type A16059 available from Alfa Aesar; C ₄ H ₆ O ₃ is a product of the type A15552 available from Alfa Aesar.

PEG-PPG-PEG was an EO20PO70EO20 model Pluronic P123 available from Sigma-Aldrich Co., Ltd.

These inorganic oxide powders 31 are hydrophobic type titanium-titanium mixed oxide powders having a particle diameter of about 10 nm and having a composition of SiO ₂ (5 wt%) / TiO ₂ (95 wt%).

The electrical test was performed using a constant potential galvanometer model VersaSTAT4 from Princeton Applied Research. <Specific example>

Specific examples of the method for reducing the resistance of the metal oxide semiconductor of the present invention and the method for producing the quantum battery having low internal resistance are carried out according to the embodiment of the above-described production method, and the detailed production flow and parameters are described below.

First, an ITO layer and a WO ₃ n-type metal oxide semiconductor layer having a thickness of 120 nm and a NiO having a thickness of 270 nm are sequentially sputtered on the glass plate and the upper glass plate, respectively. The metal oxide semiconductor layer is used to separately produce the first and second electrode units of the specific example. In this specific example of the present invention, the area of the n-type metal oxide semiconductor layer of WO ₃ and the p-type metal oxide semiconductor layer of the NiO are both 5 cm × 5 cm.

Next, mix 10.6 g of LiClO ₄ , 200 ml of C ₄ H ₆ O ₃ (density 1.205 g/cm ³ , converted to a weight of 241 g), and 50 ml of deionized water (DI water) to prepare One of the specific examples contains an electrolyte solution containing Li ⁺ (the content of LiClO ₄ in the electrolyte solution is 3.515 wt%), and the second electrode unit is immersed in the electrolyte solution to be fixed on a cathode, and is permeated. A power supply electrically connected to an anode (stainless steel) supplies a voltage of -2.5 V to the cathode for about 120 seconds to allow Li ⁺ in the electrolyte solution to be implanted into the p-type metal oxide semiconductor layer of the NiO.

Subsequently, 1 g of hydrophobic cerium-titanium mixed oxide powder, 15 g of EO20PO70EO20, and 50 g of deionized water were thoroughly mixed and stirred to prepare a mixture of hydrophobic cerium and titanium containing 1.51% by weight of one of the specific examples. Oxide powder, 75.76 wt% deionized water, and 22.73 wt% of EO20PO70EO20 slurry, and sequentially applied to the WO ₃ n-type at 500 rpm and 2000 rpm. A slurry film of this specific example was obtained on the metal oxide semiconductor layer and on the p-type metal oxide semiconductor layer of the NiO.

After the slurry film is completed, the slurry films are sequentially dried to obtain the two precursor films of the specific example, and the precursor films are irradiated with ultraviolet light having a wavelength of 254 nm to obtain the specific example. Two pre-formed films. Finally, the pre-shaped films are joined such that the bonded pre-formed films become a charging layer of the specific example, and thereby a quantum battery having a low internal resistance of the specific example is obtained. <Comparative example>

A comparative example of the method for reducing the resistance of a metal oxide semiconductor of the present invention and the method for producing a quantum battery having low internal resistance is substantially the same as the specific example, and the difference is that the comparative example does not implement a metal oxide semiconductor reduction. The method of resistance. <Analysis data>

Fig. 11 shows the results of the stability test of the long-term charge and discharge of this specific example. Specifically, the specific example of the present invention charges the charging layer for 30 minutes (1800 seconds) at a constant current of 2 μA, and then charges the layer with an open circuit mode in which the load resistance (R _L ) is greater than 10 GΩ. Perform self-discharge. As can be seen from Fig. 11, this specific example only takes about 8 minutes of charging time, and its maximum potential can exceed 1.85 V. After reaching the aforementioned maximum potential, stable charging begins; relatively, this specific example is self-discharge. It is discharged from 1.5 V.

In addition, FIG. 12 shows the results of the charge and discharge test of this specific example. Specifically, in the specific example of the present invention, the charging layer is charged for 30 minutes at a constant current of 2 μA, and then the charging layer is discharged in a negative current mode of reverse current (-1 μA). . As can be seen from Fig. 12, the specific example has a charging time of about 12 minutes, and its maximum potential has reached 1.8 V. After reaching the maximum potential, stable charging is started, and this specific example is also discharged from 1.5 V.

In contrast, the comparative example (see FIG. 13 and FIG. 14), the charging conditions of the comparative example and the discharge conditions in the open mode (FIG. 13) and the negative current mode (FIG. 14) are the same as in the specific example. As can be seen from FIG. 13, the comparative example has a charging time of about 9 minutes, the maximum potential value is only 1.5 V, the charging time is relatively larger than 8 minutes of the specific example, and the maximum potential is lower than 1.85 V of the specific example. Moreover, the state of charge presented after reaching the aforementioned maximum potential is not stable, and the comparative example starts discharging from 1.2 V in the open mode, and its voltage drop is significantly lower than 1.5 V of the specific example. The specific example of the present invention is to reduce the resistance of the p-type metal oxide semiconductor layer itself of the NiO by injecting Li ⁺ ions into the p-type metal oxide semiconductor layer of NiO, thereby making the inside of the quantum battery of the specific example The resistance drops.

Similarly, as shown in FIG. 14, the comparative example has a charging time of about 12 minutes and 30 seconds, and the maximum potential value is only 1.45 V. Although the charging time is slightly larger than 12 minutes of the specific example, the maximum potential is lower than 1.8 V of the specific example; further, the state of charge presented after reaching the aforementioned maximum potential is also unstable, and the comparative example is also discharged from 1.2 V, and the voltage drop thereof is significantly smaller than 1.5 V of the specific example, which proves the case relatively. In this specific example, since the Li ⁺ ion is implanted into the p-type metal oxide semiconductor layer of NiO to lower the resistance of the p-type metal oxide semiconductor layer itself of the NiO, the internal resistance of the quantum battery of this specific example is low.

In summary, the present invention reduces the resistance of a metal oxide semiconductor and a method of manufacturing the same, and the second electrode unit of the n-type metal oxide semiconductor layer in which the NiO is formed is fixed in the electrolyte solution. Passing the negative voltage to move the Li ⁺ ions in the electrolyte solution toward the cathode to inject the NiO n-type metal oxide semiconductor layer to reduce the resistance value thereof, and omitting the high temperature thermal annealing and firing Under the premise of the process, the process and cost are simplified, and the internal resistance of the quantum battery is lowered, so that the object of the present invention can be achieved.

However, the above is only the embodiment of the present invention, and the scope of the invention is not limited thereto, and all the simple equivalent changes and modifications according to the scope of the patent application and the patent specification of the present invention are still Within the scope of the invention patent.

1‧‧‧First electrode unit

311‧‧‧n type metal oxide particles

11‧‧‧First conductive substrate

312‧‧‧Insulating oxide layer

111‧‧‧Under the glass plate

3d‧‧‧Slurry

112‧‧‧Under ITO layer

3e‧‧‧Slurry film

12‧‧‧First-pole metal oxide semiconductor layer

3f‧‧‧Precursor film

2‧‧‧Second electrode unit

3g‧‧‧Preform film

21‧‧‧Second conductive substrate

4‧‧‧ furnace tube

211‧‧‧Upper glass plate

5‧‧‧UV light

212‧‧‧Upper ITO layer

6‧‧‧Electrolyte solution

22‧‧‧Second-pole metal oxide semiconductor layer

7‧‧‧ cathode

3‧‧‧Charging layer

8‧‧‧Power supply

31‧‧‧Inorganic oxide powder

9‧‧‧Anode

Other features and advantages of the present invention will be apparent from the following description of the drawings, wherein: Figure 1 is a front elevational view showing the film structure of the quantum cell disclosed in the US Publication No. 2013/0276878 A1; 2 is a detailed view of a charging layer of the quantum battery of FIG. 1; FIG. 3 is a front elevational view showing a step (a) of an embodiment of the method for fabricating a low internal resistance quantum cell of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 5 is a front elevational view showing a step (c) of the process of the embodiment of the present invention; FIG. 6 is a front elevational view showing the present invention. A step (d) of the method of the embodiment; FIG. 7 is a front elevational view showing a step (e) of the method of the embodiment of the present invention; FIG. 8 is a front view showing a first embodiment of the method of the present invention. Step (f); Figure 9 is a front elevational view showing a step (g) of the process of the embodiment of the present invention; Figure 10 is a front elevational view showing a step (h) of the process of the embodiment of the present invention A quantum battery produced by the method of the invention; FIG. 11 is a voltage (V) versus time (sec) graph illustrating a specific example of the low internal resistance quantum cell of the present invention in an open circuit mode. Figure 12 is a voltage (V) vs. time (sec) graph illustrating the electrical properties of the specific example of the present invention in a negative current mode; Figure 13 is a voltage (V) vs. time (sec) a graph illustrating the electrical properties of one of the quantum cells of the low internal resistance of the present invention in an open circuit voltage mode; and FIG. 14 is a voltage (V) vs. time (sec) graph illustrating the comparative example of the present invention. Electrical properties in negative current mode.

Claims (8)

A method for reducing the resistance of a metal oxide semiconductor, comprising: providing a negative voltage to a conductive substrate deposited with a metal oxide semiconductor layer and fixed to a cathode in an electrolyte solution containing a metal ion; Metal ions are implanted into the metal oxide semiconductor layer, the metal ions being selected from the group consisting of alkali metal ions, alkaline earth metal ions, and a combination of the foregoing metal ions; wherein the electrolyte solution is mixed a metal salt containing the metal ion and a polar solvent; and wherein, by weight percentage of the electrolyte solution, the concentration of the metal salt in the electrolyte solution is from 1.7 wt% to a saturation concentration thereof between. The method for reducing the resistance of a metal oxide semiconductor according to claim 1, wherein the alkali metal ion is selected from the group consisting of lithium, sodium, potassium, and a combination of the foregoing metal ions; The alkaline earth metal ion is selected from the group consisting of ruthenium, magnesium, and a combination of the foregoing metal ions. The method of reducing the resistance of a metal oxide semiconductor according to claim 1, wherein the metal salt is lithium perchlorate; and the polar solvent is propylene carbonate. The method of reducing the resistance of a metal oxide semiconductor according to claim 1, wherein the metal oxide semiconductor layer is made of a metal oxide semiconductor selected from the group consisting of nickel oxide, Tungsten trioxide, titanium dioxide, vanadium pentoxide, tin dioxide, and zirconia. A method for fabricating a low internal resistance quantum cell, comprising: (a) depositing a first electrode type metal oxide semiconductor layer on a first conductive substrate to thereby obtain a first electrode unit; (b) Depositing a metal oxide semiconductor layer opposite to the first pole type of the first pole type on a second conductive substrate to form a second electrode unit; (c) oxidizing the metal of the first pole type At least one of the semiconductor layer and the second-type metal oxide semiconductor layer is subjected to the method of claim 1; (d) a slurry containing a plurality of inorganic oxide powders, each inorganic oxide The powder comprises an n-type metal oxide particle and an insulating oxide layer covering the n-type metal oxide particle; (e) after the step (c), on the metal oxide semiconductor layer of the first electrode unit And coating the slurry on the metal oxide semiconductor layer of the second electrode unit to obtain a slurry film; (f) drying the slurry film to obtain two precursor films; (g) The precursor film layer illuminates to obtain two pre-shaped films; and (h) joins the same Such pre-shaped so that after the film was shaped into a charging bonding film layer, and to produce a low resistance of the obtained quantum battery. The method for producing a low internal resistance quantum cell according to claim 5, wherein the slurry of the step (d) further comprises water and a polyalkoxy copolymer, the polyalkoxy copolymer having at least one hydrophilic Segment and a hydrophobic section. The method for producing a low internal resistance quantum cell according to claim 6, wherein the polyalkoxy copolymer of the step (d) is selected from the group consisting of a two-stage copolymer and a three-stage copolymerization. One of the two; the n-type metal oxide particles of the step (d) are selected from the group consisting of titanium oxide particles, tin oxide particles or zinc oxide particles; the insulating oxide layer of the step (d) is made of cerium oxide or oxidized Made of aluminum. The method for producing a low internal resistance quantum cell according to claim 7, wherein the polyalkoxy copolymer of the step (d) is a polyoxypropylene polyoxyethylene copolymer; and the n-type metal oxidation of the step (d) The particles of the particles are titanium oxide particles; the insulating oxide layer of the step (d) is composed of cerium oxide.