TWI666307B - Resin composition for encapsulation, semiconductor device and structure - Google Patents

Resin composition for encapsulation, semiconductor device and structure Download PDF

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Publication number
TWI666307B
TWI666307B TW104118104A TW104118104A TWI666307B TW I666307 B TWI666307 B TW I666307B TW 104118104 A TW104118104 A TW 104118104A TW 104118104 A TW104118104 A TW 104118104A TW I666307 B TWI666307 B TW I666307B
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compound
resin composition
sealing
sealing resin
formula
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TW104118104A
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Chinese (zh)
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TW201643233A (en
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吉田顕二
Kenji Yoshida
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日商住友電木股份有限公司
Sumitomo Bakelite Co., Ltd.
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本發明之密封用樹脂組成物含有:環氧樹脂(A);具有聯伸苯基骨架之苯酚芳烷基樹脂(B);及僅具有一個酚性羥基之化合物(C);上述化合物(C)含有下述式(1)表示之化合物; The sealing resin composition of the present invention includes: an epoxy resin (A); a phenol aralkyl resin (B) having a biphenyl group; and a compound (C) having only one phenolic hydroxyl group; and the compound (C) ) Contains a compound represented by the following formula (1);

Description

密封用樹脂組成物、半導體裝置、及構造體 Resin composition for sealing, semiconductor device, and structure

本發明係關於一種密封用樹脂組成物、半導體裝置、及構造體。 The present invention relates to a sealing resin composition, a semiconductor device, and a structure.

半導體裝置例如係藉由使用密封用樹脂組成物將搭載於基板上之半導體元件密封成形而形成。作為此種密封用樹脂組成物,例如有使用含有環氧樹脂之環氧樹脂組成物之情況。 The semiconductor device is formed, for example, by sealing and molding a semiconductor element mounted on a substrate using a sealing resin composition. As such a sealing resin composition, for example, an epoxy resin composition containing an epoxy resin may be used.

專利文獻1中記載有與用作環氧樹脂用硬化劑之酚系酚醛清漆縮合體相關之技術。 Patent Document 1 describes a technique related to a phenol novolac condensate used as a hardener for an epoxy resin.

專利文獻1:日本特開平8-143648號公報 Patent Document 1: Japanese Unexamined Patent Publication No. 8-143648

為了穩定地進行半導體元件之密封,而要求提高密封用樹脂組成物之成形性。本發明者對作為用以評價密封用樹脂組成物之成形性之 指標之一的密封成形時之殘料滯留的抑制進行研究。所謂殘料滯留,係指於密封成形步驟中進行開模時殘料附著於柱塞或模具上,藉由成形機之自動去除處理亦無法去除,而殘存殘料之現象。於此情形時,必須停止密封成形而以手動去除殘料。因此,要求實現可進行更穩定之密封成形之密封用樹脂組成物。 In order to stably seal a semiconductor element, it is required to improve the moldability of the resin composition for sealing. The present inventor One of the indicators is to study the suppression of residual material retention during seal forming. The so-called residual material retention refers to the phenomenon that the residual material adheres to the plunger or the mold when the mold is opened in the sealing forming step, and cannot be removed by the automatic removal process of the forming machine, and the residual material remains. In this case, it is necessary to stop the seal forming and manually remove the residual material. Therefore, it is required to realize a sealing resin composition that can perform more stable sealing molding.

根據本發明,提供一種密封用樹脂組成物,其含有:環氧樹脂(A);具有聯伸苯基(biphenylene)骨架之苯酚芳烷基樹脂(B);及僅具有一個酚性羥基之化合物(C),上述化合物(C)含有下述式(1)表示之化合物。 According to the present invention, there is provided a resin composition for sealing, comprising: an epoxy resin (A); a phenol aralkyl resin (B) having a biphenylene skeleton; and a compound having only one phenolic hydroxyl group (C) The compound (C) contains a compound represented by the following formula (1).

又,根據本發明,提供一種半導體裝置,其具備:基材;搭載於上述基材上之半導體元件;及密封樹脂,該密封樹脂由上述密封用樹脂組成物之硬化物構成,且對上述半導體元件進行密封。 Furthermore, according to the present invention, there is provided a semiconductor device including: a base material; a semiconductor element mounted on the base material; and a sealing resin made of a hardened body of the sealing resin composition, and the semiconductor The components are sealed.

又,根據本發明,提供一種構造體,其具備:基材;搭載於上述基材上之多個半導體元件;及密封樹脂,該密封樹脂由上述密封用樹脂組成物之硬化物構成,且對上述多個半導體元件進行密封。 Furthermore, according to the present invention, there is provided a structure including: a base material; a plurality of semiconductor elements mounted on the base material; and a sealing resin made of a hardened body of the sealing resin composition. The plurality of semiconductor elements are sealed.

根據本發明,可穩定地進行半導體元件之密封。 According to the present invention, sealing of a semiconductor element can be performed stably.

10‧‧‧基材 10‧‧‧ Substrate

20‧‧‧半導體元件 20‧‧‧Semiconductor element

30‧‧‧密封樹脂 30‧‧‧sealing resin

40‧‧‧接合線 40‧‧‧ bonding wire

50‧‧‧焊料球 50‧‧‧solder ball

100‧‧‧半導體裝置 100‧‧‧ semiconductor device

102‧‧‧構造體 102‧‧‧ structure

上述之目的及其他目的、特徵及優點可藉由以下所述之較佳之實施形態、及隨附於其之以下之圖式而進一步明確。 The above-mentioned object and other objects, features, and advantages can be further clarified by the preferred embodiments described below and the following drawings attached thereto.

圖1係表示本實施形態之半導體裝置一例之剖面圖。 FIG. 1 is a sectional view showing an example of a semiconductor device according to this embodiment.

圖2係表示本實施形態之構造體一例之剖面圖。 FIG. 2 is a cross-sectional view showing an example of a structure body according to this embodiment.

以下,使用圖式對實施形態進行說明。再者,於所有圖式中,對同樣之構成要素標註同樣之符號,並適當省略說明。 Hereinafter, embodiments will be described using drawings. In all drawings, the same constituent elements are denoted by the same reference numerals, and descriptions thereof are appropriately omitted.

本實施形態之密封用樹脂組成物含有:環氧樹脂(A);具有聯伸苯基骨架之苯酚芳烷基樹脂(B);及僅具有一個酚性羥基之化合物(C)。又,化合物(C)含有下述式(1)表示之化合物。 The sealing resin composition according to this embodiment includes: an epoxy resin (A); a phenol aralkyl resin (B) having a biphenyl group; and a compound (C) having only one phenolic hydroxyl group. The compound (C) contains a compound represented by the following formula (1).

本發明者新認識到:於作為僅具有一個酚性羥基之化合物(C)而含有上述式(1)表示之化合物之情形時,可抑制殘料滯留。本實施形態係基於此種新見解,而實現含有上述式(1)表示之化合物之密封用樹脂組成物者。藉此,可抑制殘料滯留,而提高密封用樹脂組成物之成形性。 因此,可穩定地進行半導體元件之密封。 The present inventors have newly recognized that when a compound represented by the above formula (1) is contained as the compound (C) having only one phenolic hydroxyl group, retention of residues can be suppressed. This embodiment is based on such a new knowledge, and achieves the sealing resin composition containing the compound represented by said Formula (1). Thereby, stagnation of residual material can be suppressed, and the moldability of the resin composition for sealing can be improved. Therefore, the sealing of the semiconductor element can be performed stably.

以下,對本實施形態之密封用樹脂組成物、半導體裝置100、及構造體102詳細地進行說明。 Hereinafter, the sealing resin composition, the semiconductor device 100, and the structure 102 of this embodiment will be described in detail.

首先,對密封用樹脂組成物進行說明。 First, the sealing resin composition will be described.

密封用樹脂組成物係用於形成對搭載於基材上之半導體元件進行密封之密封樹脂。使用密封用樹脂組成物之密封成形並無特別限定,例如可藉由轉移成形法、或壓縮成形法進行。基材例如為插入式等之配線基板、或引線框架。又,半導體元件藉由打線接合或覆晶連接等而電連接於基材。 The sealing resin composition is used to form a sealing resin that seals a semiconductor element mounted on a substrate. The sealing molding using the sealing resin composition is not particularly limited, and can be performed by, for example, a transfer molding method or a compression molding method. The base material is, for example, a wiring board such as a plug-in type or a lead frame. The semiconductor element is electrically connected to the base material by wire bonding, flip-chip connection, or the like.

作為藉由使用密封用樹脂組成物之密封成形對半導體元件進行密封而得之半導體裝置,並無特別限定,例如可列舉:QFP(Quad Flat Package,四面扁平封裝)、SOP(Small Outline Package,小尺寸封裝)、BGA(Ball Grid Array,球狀柵格陣列)、CSP(Chip Size Package,晶片尺寸封裝)、QFN(Quad Flat Non-leaded Package,四面扁平無引線封裝)、SON(Small Outline Non-leaded Package,小尺寸無引線封裝)、LF-BGA(Lead Flame BGA,引線框架球狀柵格陣列)。又,本實施形態之密封用樹脂組成物亦與如下構造體有關,該構造體係藉由近年來該等封裝之成形所較多應用之MAP(Mold Array Package,模塊陣列封裝)成形而形成。於此情形時,藉由使用密封用樹脂組成物將搭載於基材上之多個半導體元件一併密封而獲得上述構造體。 The semiconductor device obtained by sealing a semiconductor element by sealing molding using a sealing resin composition is not particularly limited, and examples thereof include QFP (Quad Flat Package), SOP (Small Outline Package, small Package Size), BGA (Ball Grid Array), CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), SON (Small Outline Non- leaded Package (small size leadless package), LF-BGA (Lead Flame BGA, lead frame spherical grid array). In addition, the sealing resin composition of this embodiment is also related to a structure formed by molding a MAP (Mold Array Package) that has been widely used in molding of these packages in recent years. In this case, the above-mentioned structure is obtained by collectively sealing a plurality of semiconductor elements mounted on a substrate using a sealing resin composition.

密封用樹脂組成物包含:環氧樹脂(A);具有聯伸苯基骨架之苯酚芳烷基樹脂(B);及僅具有一個酚性羥基之化合物(C)。藉此,可實現成形性優異之密封用樹脂組成物。 The sealing resin composition includes: an epoxy resin (A); a phenol aralkyl resin (B) having a biphenyl group; and a compound (C) having only one phenolic hydroxyl group. Thereby, a sealing resin composition excellent in moldability can be realized.

(環氧樹脂(A)) (Epoxy (A))

作為環氧樹脂(A),可使用1分子內具有2個以上環氧基之單體、低聚物、聚合物全部,其分子量或分子構造並無特別限定。 As the epoxy resin (A), all monomers, oligomers, and polymers having two or more epoxy groups in one molecule can be used, and the molecular weight or molecular structure is not particularly limited.

於本實施形態中,環氧樹脂(A)例如包含選自如下樹脂中之1種或2種以上:聯苯型環氧樹脂;雙酚A型環氧樹脂、雙酚F型環氧樹脂、四甲基雙酚F型環氧樹脂等雙酚型環氧樹脂;茋型環氧樹脂;酚系酚醛清漆型環氧樹脂、甲酚酚醛清漆(cresol novolac)型環氧樹脂等酚醛清漆型環氧樹脂;三苯酚甲烷型環氧樹脂、烷基改質三苯酚甲烷型環氧樹脂等多官能環氧樹脂;具有伸苯基骨架之苯酚芳烷基型環氧樹脂、具有聯伸苯基骨架之苯酚芳烷基型環氧樹脂等芳烷基型環氧樹脂;二羥基萘型環氧樹脂、將二羥基萘之二聚物環氧丙基醚化獲得之環氧樹脂等萘酚型環氧樹脂;三環氧丙基異氰尿酸酯、單烯丙基二環氧丙基異氰尿酸酯等含有三核之環氧樹脂;二環戊二烯改質酚型環氧樹脂等交聯環狀烴化合物改質酚型環氧樹脂。該等中,就提高耐濕可靠性與成形性之平衡之觀點而言,更佳包含雙酚型環氧樹脂、聯苯型環氧樹脂及苯酚芳烷基型環氧樹脂中之至少一者,尤佳包含聯苯型環氧樹脂及苯酚芳烷基型環氧樹脂中之至少一者。 In this embodiment, the epoxy resin (A) contains, for example, one or two or more selected from the following resins: biphenyl type epoxy resin; bisphenol A type epoxy resin, bisphenol F type epoxy resin, Bisphenol-type epoxy resins such as tetramethyl bisphenol F-type epoxy resin; 茋 -type epoxy resins; phenolic novolac-type epoxy resins, cresol novolac-type epoxy resins and other novolac-type rings Polyfunctional epoxy resins such as triphenol methane epoxy resin, alkyl modified triphenol methane epoxy resin, etc .; phenol aralkyl epoxy resin with phenylene skeleton, and biphenylene skeleton Aralkyl-based epoxy resins such as phenol aralkyl-based epoxy resins; naphthol-type rings such as dihydroxy naphthalene-type epoxy resins and epoxy resins obtained by etherifying a dimer of dihydroxy naphthalene with epoxypropyl group Oxygen resin; triglycidyl isocyanurate, monoallyl diglycidyl isocyanurate, etc. Core epoxy resin; crosslinked cyclic hydrocarbon compounds such as dicyclopentadiene modified phenol type epoxy resin and phenol type epoxy resin. Among these, from the viewpoint of improving the balance between moisture resistance reliability and moldability, it is more preferable to include at least one of a bisphenol type epoxy resin, a biphenyl type epoxy resin, and a phenol aralkyl type epoxy resin. It is particularly preferred to include at least one of a biphenyl type epoxy resin and a phenol aralkyl type epoxy resin.

作為環氧樹脂(A),尤佳使用含有選自由下述式(4)所表示之環氧樹脂、下述式(5)所表示之環氧樹脂、及下述式(6)所表示之環氧樹脂所組成之群中之至少1種者。 As the epoxy resin (A), it is particularly preferable to use an epoxy resin containing an epoxy resin represented by the following formula (4), an epoxy resin represented by the following formula (5), and the following formula (6). At least one of the group consisting of epoxy resin.

(式(4)中,Ar1表示伸苯基或伸萘基,Ar1為伸萘基時,環氧丙醚基亦可鍵結於α位、β位之任一個。Ar2表示伸苯基、聯伸苯基或伸萘基中之任一個基。Ra及Rb分別獨立地表示碳數1~10之烴基。g為0~5之整數,h為0~8之整數。n3表示聚合度,其平均值為1~3) (In formula (4), Ar 1 represents a phenylene group or a naphthyl group, and when Ar 1 is a naphthyl group, a glycidyl ether group may be bonded to any one of the α-position and the β-position. Ar 2 represents a phenylene Any one of a radical, a biphenylene group, or a naphthyl group. Ra and Rb each independently represent a hydrocarbon group having 1 to 10 carbon atoms. G is an integer of 0 to 5 and h is an integer of 0 to 8. n 3 represents the degree of polymerization, and its average value is 1 to 3)

(式(5)中,多個存在之Rc分別獨立地表示氫原子或碳數1~4之烴基。n5表示聚合度,其平均值為0~4) (In formula (5), a plurality of existing R c each independently represent a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms. N 5 represents a degree of polymerization, and an average value thereof is 0 to 4)

(式(6)中,多個存在之Rd及Re分別獨立地表示氫原子或碳數1~4之烴基。n6表示聚合度,其平均值為0~4) (In the formula (6), there are a plurality of R d and R e each independently represent a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms of 6 .n represents the degree of polymerization, an average value of 0 to 4)

於本實施形態中,密封用樹脂組成物中之環氧樹脂(A)之含量較佳相對於密封用樹脂組成物整體,為2質量%以上,更佳為3質量% 以上。藉由使環氧樹脂(A)之含量為上述下限值以上,可提高密封用樹脂組成物之流動性,謀求成形性之進一步提高。 In this embodiment, the content of the epoxy resin (A) in the sealing resin composition is preferably 2% by mass or more, and more preferably 3% by mass, with respect to the entire sealing resin composition. the above. When the content of the epoxy resin (A) is at least the above-mentioned lower limit value, the fluidity of the sealing resin composition can be improved, and the moldability can be further improved.

另一方面,密封用樹脂組成物中之環氧樹脂(A)之含量較佳相對於密封用樹脂組成物整體,為40質量%以下,更佳為30質量%以下。藉由使環氧樹脂(A)之含量為上述上限值以下,可針對包括使用密封用樹脂組成物形成之密封樹脂之半導體裝置提高耐濕可靠性及耐回焊性。 On the other hand, the content of the epoxy resin (A) in the sealing resin composition is preferably 40% by mass or less, more preferably 30% by mass or less, based on the entire sealing resin composition. When the content of the epoxy resin (A) is equal to or less than the above-mentioned upper limit value, moisture resistance reliability and reflow resistance can be improved for a semiconductor device including a sealing resin formed using a sealing resin composition.

(具有聯伸苯基骨架之苯酚芳烷基樹脂(B)) (Phenylaralkyl resin (B) with a biphenyl group)

具有聯伸苯基骨架之苯酚芳烷基樹脂(B)作為與環氧樹脂反應使其硬化之硬化劑而發揮功能。於本實施形態中,作為具有聯伸苯基骨架之苯酚芳烷基樹脂(B),更佳使用下述式(7)表示者,尤佳使用下述式(8)表示者。藉此,可更有效地提高密封用樹脂組成物之成形性。 The phenol aralkyl resin (B) having a biphenylene skeleton functions as a hardener that reacts with an epoxy resin to harden it. In this embodiment, as the phenol aralkyl resin (B) having a biphenyl group, it is more preferable to use the one represented by the following formula (7), and it is more preferable to use the one represented by the following formula (8). Thereby, the moldability of the sealing resin composition can be improved more effectively.

(式(7)中,Rf及Rg為氫、碳數1~4之烷基或芳基。各Rf彼此可相同亦可不同,各Rg彼此可相同亦可不同。n7表示聚合度,其平均值為1~5之整數) (In formula (7), R f and R g are hydrogen, alkyl or aryl group having 1 to 4 carbon atoms. Each R f may be the same as or different from each other, and each R g may be the same or different from each other. N 7 represents Degree of polymerization, whose average value is an integer from 1 to 5)

(式(8)中,n8表示聚合度,其平均值為1~5之整數) (In formula (8), n 8 represents the degree of polymerization, and the average value is an integer of 1 to 5)

於本實施形態中,密封用樹脂組成物中之具有聯伸苯基骨架之苯酚芳烷基樹脂(B)之含量較佳相對於密封用樹脂組成物整體,為1質量%以上,更佳為3質量%以上。藉由使具有聯伸苯基骨架之苯酚芳烷基樹脂(B)之含量為上述下限值以上,可提高密封用樹脂組成物之流動性,謀求成形性之進一步提高。 In this embodiment, the content of the phenol aralkyl resin (B) having a biphenylene skeleton in the resin composition for sealing is preferably 1% by mass or more, more preferably, based on the entire resin composition for sealing. 3% by mass or more. When the content of the phenol aralkyl resin (B) having a biphenyl group is greater than or equal to the above-mentioned lower limit, the fluidity of the sealing resin composition can be improved, and the moldability can be further improved.

另一方面,密封用樹脂組成物中之具有聯伸苯基骨架之苯酚芳烷基樹脂(B)之含量較佳相對於密封用樹脂組成物整體,為20質量%以下,更佳為10質量%以下。藉由使具有聯伸苯基骨架之苯酚芳烷基樹脂(B)之含量為上述上限值以下,可針對包括使用密封用樹脂組成物形成之密封樹脂之半導體裝置提高耐濕可靠性及耐回焊性。 On the other hand, the content of the phenol aralkyl resin (B) having a stretched phenyl skeleton in the sealing resin composition is preferably 20% by mass or less, more preferably 10% by mass relative to the entire sealing resin composition. %the following. By setting the content of the phenol aralkyl resin (B) having a biphenyl group to be less than the above-mentioned upper limit value, it is possible to improve moisture resistance reliability and resistance to a semiconductor device including a sealing resin formed using a sealing resin composition. Resolderability.

本實施形態之密封用樹脂組成物亦可進而含有具聯伸苯基骨架之苯酚芳烷基樹脂(B)以外之其他成分作為硬化劑。作為其他成分,例如可列舉:乙二胺、三亞甲基二胺、四亞甲基二胺、六亞甲基二胺等碳數2~20之直鏈脂肪族二胺、間苯二胺、對苯二胺、4,4'-二胺基二苯甲烷、4,4'-二胺基二苯丙烷、4,4'-二胺基二苯醚、4,4'-二胺基二苯基碸、4,4'-二胺基二環己烷、雙(4-胺基苯基)苯基甲烷、1,5-二胺基萘、間苯二甲胺、對苯二甲胺、1,1-雙(4-胺基苯基)環己烷、二胺基二醯胺等胺類;苯胺改質可溶酚 醛樹脂或二甲醚可溶酚醛樹脂等可溶酚醛型酚樹脂;苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚樹脂;含有伸苯基骨架之苯酚芳烷基樹脂等苯酚芳烷基樹脂;具有如萘骨架或蒽骨架之縮合多環構造之酚樹脂;聚對羥基苯乙烯等聚羥基苯乙烯;包含六氫鄰苯二甲酸酐(HHPA)、甲基四氫鄰苯二甲酸酐(MTHPA)等脂環族酸酐、偏苯三甲酸酐(TMA)、均苯四甲酸二酐(PMDA)、二苯甲酮四羧酸(BTDA)等芳香族酸酐等之酸酐等;多硫化物、硫酯、硫醚等聚硫醇化合物;異氰酸酯預聚物、封端化異氰酸酯等異氰酸酯化合物;含有羧酸之聚酯樹脂等有機酸類。 The sealing resin composition according to this embodiment may further contain, as a hardener, components other than the phenol aralkyl resin (B) having a biphenyl group. Examples of other components include linear aliphatic diamines having 2 to 20 carbon atoms such as ethylenediamine, trimethylenediamine, tetramethylenediamine, and hexamethylenediamine, m-phenylenediamine, P-phenylenediamine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylpropane, 4,4'-diaminodiphenyl ether, 4,4'-diaminediphenyl Phenylhydrazone, 4,4'-diaminodicyclohexane, bis (4-aminophenyl) phenylmethane, 1,5-diaminonaphthalene, m-xylylenediamine, p-xylylenediamine , 1,1-bis (4-aminophenyl) cyclohexane, diamine diamine and other amines; aniline modified soluble phenol Soluble novolac phenol resins such as aldehyde resins or dimethyl ether soluble phenol resins; novolac phenol resins such as phenol novolac resin, cresol novolac resin, third butyl novolac resin, nonylphenol novolac resin ; Phenol aralkyl resins such as phenol aralkyl resins containing a phenylene skeleton; phenol resins having a condensed polycyclic structure such as a naphthalene skeleton or an anthracene skeleton; polyhydroxystyrene such as polyparahydroxystyrene; containing hexahydroortho Cyclic anhydrides such as phthalic anhydride (HHPA), methyltetrahydrophthalic anhydride (MTHPA), trimellitic anhydride (TMA), pyromellitic dianhydride (PMDA), benzophenone tetracarboxylic acid Acid anhydrides such as aromatic anhydrides such as acids (BTDA); polythiol compounds such as polysulfides, thioesters, and thioethers; isocyanate compounds such as isocyanate prepolymers and blocked isocyanates; organic resins such as polyester resins containing carboxylic acids Acids.

於含有除上述具有聯伸苯基骨架之苯酚芳烷基樹脂(B)以外之其他成分作為硬化劑之情形時,較佳相對於硬化劑整體,含有20質量%以上之具有聯伸苯基骨架之苯酚芳烷基樹脂(B),更佳含有30質量%以上,進而較佳為含有50質量%以上。 When a component other than the above-mentioned phenol aralkyl resin (B) having a stretched phenyl skeleton is contained as a hardener, it is preferable to contain 20% by mass or more of a stretched phenyl skeleton with respect to the entire hardener. The phenol aralkyl resin (B) preferably contains 30% by mass or more, and more preferably contains 50% by mass or more.

(僅具有一個酚性羥基之化合物(C)) (Compound (C) having only one phenolic hydroxyl group)

密封用樹脂組成物含有僅具有一個酚性羥基之化合物(C)。藉此,可調整密封用樹脂組成物之硬化特性,而更有效地提高成形性與耐濕可靠性之平衡。再者,於本說明書中,所謂密封用樹脂組成物中含有僅具有一個酚性羥基之化合物(C),係指相對於密封用樹脂組成物整體含有1ppm以上之情形。 The sealing resin composition contains a compound (C) having only one phenolic hydroxyl group. Thereby, the hardening characteristics of the resin composition for sealing can be adjusted, and the balance between formability and moisture resistance reliability can be improved more effectively. In addition, in this specification, the case where the compound (C) which has only one phenolic hydroxyl group is contained in the sealing resin composition means the case where it contains 1 ppm or more with respect to the whole sealing resin composition.

於本實施形態中,僅具有一個酚性羥基之化合物(C)之含量較佳相對於密封用樹脂組成物整體,為1ppm以上,更佳為5ppm以上。又,僅具有一個酚性羥基之化合物(C)之含量較佳相對於密封用樹脂組成 物整體,為3000ppm以下,更佳為2500ppm以下。藉由將化合物(C)之含量設為此種範圍,可將與柱塞或模具接觸之樹脂硬化物之交聯狀態保持為適當之狀態,而可有效率地減少殘料滯留之現象。 In this embodiment, the content of the compound (C) having only one phenolic hydroxyl group is preferably 1 ppm or more, and more preferably 5 ppm or more, based on the entire sealing resin composition. The content of the compound (C) having only one phenolic hydroxyl group is preferably based on the composition of the sealing resin. The total amount is 3,000 ppm or less, and more preferably 2500 ppm or less. By setting the content of the compound (C) in such a range, the crosslinked state of the resin hardened material in contact with the plunger or the mold can be maintained in an appropriate state, and the phenomenon of residual material retention can be effectively reduced.

再者,僅具有一個酚性羥基之化合物(C)之含量例如可藉由氣相層析法進行分析。以下,關於下述式(1)表示之化合物、下述式(2)表示之化合物(D)、及下述式(3)表示之化合物(E)各自之含量,為同樣。 The content of the compound (C) having only one phenolic hydroxyl group can be analyzed, for example, by gas chromatography. Hereinafter, the respective contents of the compound represented by the following formula (1), the compound (D) represented by the following formula (2), and the compound (E) represented by the following formula (3) are the same.

僅具有一個酚性羥基之化合物(C)含有下述式(1)表示之化合物。藉此,可抑制密封成形時之殘料滯留,可實現成形性優異之密封用樹脂組成物。再者,於本說明書中,所謂化合物(C)中含有下述式(1)表示之化合物,係指相對於化合物(C)整體,含有1ppm以上之情形。 The compound (C) having only one phenolic hydroxyl group contains a compound represented by the following formula (1). With this, it is possible to suppress stagnation of residual material at the time of sealing molding, and to realize a sealing resin composition having excellent moldability. In addition, in this specification, the term "compound (C) contains a compound represented by the following formula (1)" means the case where it contains 1 ppm or more with respect to the whole compound (C).

於本實施形態中,上述式(1)表示之化合物之含量較佳相對於密封用樹脂組成物整體,為10ppm以上,更佳為15ppm以上,進而較佳為25ppm以上。藉由使上述式(1)表示之化合物之含量為上述下限值以上,可有效地抑制密封成形時之殘料滯留,謀求密封用樹脂組成物之成形性之進一步提高。如此,為了進而有效地抑制殘料滯留,較佳於密封用樹脂組成物中含有一定量以上之上述式(1)表示之化合物。其可藉由利用下述之本實施形態之方法進行僅具有一個酚性羥基之化合物(C)之合成而實現。 In this embodiment, the content of the compound represented by the above formula (1) is preferably 10 ppm or more, more preferably 15 ppm or more, and even more preferably 25 ppm or more with respect to the entire sealing resin composition. When the content of the compound represented by the formula (1) is equal to or more than the above-mentioned lower limit, it is possible to effectively suppress the retention of residue during sealing molding, and further improve the moldability of the resin composition for sealing. In this way, in order to further effectively suppress the retention of residual materials, it is preferable that the compound represented by the above formula (1) is contained in the sealing resin composition in a certain amount or more. This can be achieved by synthesizing the compound (C) having only one phenolic hydroxyl group by the method of this embodiment described below.

另一方面,上述式(1)表示之化合物之含量較佳相對於密封用樹脂組成物整體,為300ppm以下,更佳為200ppm以下,尤佳為100ppm以下。藉由使上述式(1)表示之化合物之含量為上述上限值以下,而可針對密封用樹脂組成物提高成形性與硬化性之間之平衡。 On the other hand, the content of the compound represented by the formula (1) is preferably 300 ppm or less, more preferably 200 ppm or less, and even more preferably 100 ppm or less with respect to the entire sealing resin composition. When the content of the compound represented by the formula (1) is equal to or less than the above-mentioned upper limit value, it is possible to improve the balance between moldability and hardenability for the sealing resin composition.

於本實施形態中,僅具有一個酚性羥基之化合物(C)亦可進而含有上述式(1)表示之化合物以外之其他化合物。作為此種其他成分,例如可列舉下述式(9)表示之化合物、或下述式(10)表示之化合物。藉由進而包含此種其他成分,可更容易地調整密封用樹脂組成物之硬化特性。 In this embodiment, the compound (C) having only one phenolic hydroxyl group may further contain a compound other than the compound represented by the formula (1). Examples of such other components include a compound represented by the following formula (9) or a compound represented by the following formula (10). By further including such other components, the hardening characteristics of the resin composition for sealing can be adjusted more easily.

(式(2)表示之化合物(D)) (Compound (D) represented by formula (2))

本實施形態之密封用樹脂組成物亦可進而含有例如下述式(2)表示之化合物(D)。藉此,可更有效地抑制密封成形時之殘料滯留,謀求成形性之進一步提高。又,亦可使硬化特性之調整更容易,而有助於成形性與耐濕可靠性之平衡。再者,於本說明書中,所謂密封用樹脂組成物中含有化合物(D),係指相對於密封用樹脂組成物整體,含有1ppm以上之情形。 The sealing resin composition of the present embodiment may further contain, for example, a compound (D) represented by the following formula (2). Thereby, it is possible to more effectively suppress the stagnation of the residual material at the time of the seal forming, and to further improve the formability. In addition, the adjustment of the hardening characteristics can be made easier, which contributes to the balance between moldability and moisture resistance reliability. In addition, in this specification, the term "comprising compound (D) in the sealing resin composition" means that the compound (D) is contained in an amount of 1 ppm or more with respect to the entire sealing resin composition.

於本實施形態中,上述式(2)表示之化合物(D)之含量較佳相對於密封用樹脂組成物整體,為30ppm以上,更佳為40ppm以上。又,上述式(2)表示之化合物(D)之含量較佳相對於密封用樹脂組成物整體,為800ppm以下,更佳為500ppm以下。藉由使上述式(2)表示之化合物(D)之含量處於上述範圍內,可更有效地抑制密封成形時之殘料滯留,謀求密封用樹脂組成物之成形性之進一步提高。又,可針對密封用樹脂組成物提高成形性與硬化性之間之平衡。 In this embodiment, the content of the compound (D) represented by the formula (2) is preferably 30 ppm or more, and more preferably 40 ppm or more, based on the entire sealing resin composition. The content of the compound (D) represented by the formula (2) is preferably 800 ppm or less, more preferably 500 ppm or less, based on the entire sealing resin composition. When the content of the compound (D) represented by the above formula (2) is within the above range, it is possible to more effectively suppress the retention of residual material during sealing molding, and to further improve the moldability of the resin composition for sealing. In addition, it is possible to improve the balance between moldability and hardenability for the resin composition for sealing.

(式(3)表示之化合物(E)) (Compound (E) represented by formula (3))

本實施形態之密封用樹脂組成物亦可進而含有例如下述式(3)表示之化合物(E)。藉此,可更有效地抑制密封成形時之殘料滯留,謀求成形性之進一步提高。再者,於本說明書中,所謂密封用樹脂組成物中含有化合物(E),係指相對於密封用樹脂組成物整體,含有1ppm以上之情形。 The sealing resin composition of the present embodiment may further contain, for example, a compound (E) represented by the following formula (3). Thereby, it is possible to more effectively suppress the stagnation of the residual material at the time of the seal forming, and to further improve the formability. In addition, in this specification, the term "comprising compound (E) in the sealing resin composition" means that the compound (E) is contained in an amount of 1 ppm or more with respect to the entire sealing resin composition.

於本實施形態中,上述式(3)表示之化合物(E)之含量較佳相對於密封用樹脂組成物整體,為1ppm以上,更佳為3ppm以上。又,上述式(3)表示之化合物(E)之含量較佳相對於密封用樹脂組成物整體, 為50ppm以下,更佳為30ppm以下。藉由使上述式(3)表示之化合物(E)之含量處於上述範圍內,可更有效地抑制密封成形時之殘料滯留,且謀求密封用樹脂組成物之硬化特性之進一步提高。 In this embodiment, the content of the compound (E) represented by the formula (3) is preferably 1 ppm or more, and more preferably 3 ppm or more, based on the entire sealing resin composition. The content of the compound (E) represented by the formula (3) is preferably based on the entire resin composition for sealing. It is 50 ppm or less, and more preferably 30 ppm or less. When the content of the compound (E) represented by the formula (3) is within the above-mentioned range, it is possible to more effectively suppress the retention of residue during sealing molding, and further improve the hardening characteristics of the resin composition for sealing.

於本實施形態中,密封用樹脂組成物中尤其可含有如上述式(1)、上述式(2)及上述式(3)所示者,其為具有4個以上芳香環之聯苯化合物,酚性羥基少至2個以下,且至少位於一末端之芳香環不具有酚性羥基。推測此種化合物具有提高開模時對柱塞或模具之脫模性之功能。本發明者基於此種見解,提高密封用樹脂組成物之開模時之脫模性,藉此實現密封成形時之殘料滯留之抑制。 In this embodiment, the sealing resin composition may contain a biphenyl compound having four or more aromatic rings as shown in the formula (1), the formula (2), and the formula (3). The phenolic hydroxyl group has as few as two or less, and the aromatic ring at least at one terminal does not have a phenolic hydroxyl group. It is presumed that this compound has the function of improving the release property of the plunger or the mold when the mold is opened. Based on this knowledge, the present inventors improved the mold release property at the time of mold opening of the sealing resin composition, thereby achieving suppression of residual material retention during sealing molding.

就此種觀點而言,為了更有效地抑制殘料滯留,尤佳除僅具有一個酚性羥基之化合物(C)即上述式(1)表示之化合物以外,進而含有上述式(2)表示之化合物(D)及上述式(3)表示之化合物(E)中之至少一者。藉此,可實現能更穩定地進行密封成形之密封用樹脂組成物。 From this viewpoint, in order to more effectively suppress the retention of residual materials, it is particularly preferable to include the compound represented by the above formula (2) in addition to the compound (C) having only one phenolic hydroxyl group, that is, the compound represented by the above formula (1). (D) and at least one of the compounds (E) represented by the formula (3). Thereby, the sealing resin composition which can perform sealing molding more stably is realizable.

於本實施形態中,例如藉由對使酚類與4,4'-雙氯甲基聯苯等雙鹵代甲基聯苯進行縮聚合而獲得之反應產物進行未反應成分之蒸餾去除處理、及水洗處理,可獲得含具有聯伸苯基骨架之苯酚芳烷基樹脂(B)與僅具有一個酚性羥基之化合物(C)之混合物。此時,藉由適當地調整未反應成分之蒸餾去除處理、及水洗處理之條件,可獲得含上述式(1)表示之化合物之上述混合物。又,亦可控制僅具有一個酚性羥基之化合物(C)或上述式(1)表示之化合物各自之含量。於本實施形態中,未反應成分之蒸餾去除處理例如可藉由將低分子量成分去除之手法而進行。作為將低分子量成分去除之手法,例如可藉由於通用之減壓蒸餾之手法中適當地設定溫 度或減壓度而進行,亦可應用水蒸氣蒸餾、分子蒸餾、或利用GPC管柱等之分取、分餾等手法。尤其是為了含有適當量之上述式(1)表示之化合物等,亦較佳為採用如下手法:於利用上述通常之去除低分子量成分之手法將低分子量成分暫時去除之後,對被去除之低分子量成分進行蒸餾並分餾,再次添加至母體中。又,於水洗處理中,例如將於向反應產物中加入蒸餾水並振盪之後去掉水層之操作(水洗)進行數次即可。再者,作為酚類,例如可使用選自苯酚、甲酚、甲基苯酚、正丙基苯酚、二甲苯酚、甲基丁基苯酚、環戊基苯酚、及環己基苯酚中之1種或2種以上。 In this embodiment, for example, a reaction product obtained by polycondensing a phenol with a dihalomethylbiphenyl such as 4,4'-bischloromethylbiphenyl is subjected to a distillation and removal treatment of unreacted components, And water washing treatment, a mixture containing a phenol aralkyl resin (B) having a biphenyl group and a compound (C) having only one phenolic hydroxyl group can be obtained. At this time, by appropriately adjusting the conditions of the distillation removal treatment of the unreacted components and the water washing treatment, the above-mentioned mixture containing the compound represented by the above formula (1) can be obtained. In addition, the content of each of the compound (C) having only one phenolic hydroxyl group or the compound represented by the formula (1) can be controlled. In this embodiment, the distillation and removal processing of unreacted components can be performed, for example, by a method of removing low molecular weight components. As a method for removing low-molecular-weight components, for example, the temperature can be appropriately set by a general-purpose vacuum distillation method. It can be carried out at a degree of pressure or a reduced pressure, and can also be applied by methods such as steam distillation, molecular distillation, or fractionation and fractionation using a GPC column. In particular, in order to contain an appropriate amount of the compound represented by the above formula (1), it is also preferable to adopt the following method: After the low molecular weight component is temporarily removed by the above-mentioned ordinary method for removing the low molecular weight component, the low molecular weight to be removed is temporarily removed. The components were distilled and fractionated, and added to the matrix again. In the water washing treatment, for example, the operation (water washing) of removing the water layer after adding distilled water to the reaction product and shaking it may be performed several times. In addition, as the phenols, for example, one selected from phenol, cresol, methylphenol, n-propylphenol, xylenol, methylbutylphenol, cyclopentylphenol, and cyclohexylphenol may be used. 2 or more.

又,藉由進而高度地控制未反應成分之蒸餾去除處理、及水洗處理之條件,亦可獲得除上述式(1)表示之化合物以外進而含上述式(2)表示之化合物(D)、及上述式(3)表示之化合物(E)之上述混合物。又,亦可控制上述式(2)表示之化合物(D)及上述式(3)表示之化合物(E)各自之含量。 Furthermore, by further controlling the conditions of the distillation and removal treatment of unreacted components and the water washing treatment, a compound (D) represented by the above formula (2) can be obtained in addition to the compound represented by the above formula (1), and The above mixture of the compound (E) represented by the above formula (3). The content of each of the compound (D) represented by the formula (2) and the compound (E) represented by the formula (3) may be controlled.

(填充劑(F)) (Filler (F))

密封用樹脂組成物可進而包含例如填充劑(F)。作為填充材料(F),可使用一般之半導體密封用環氧樹脂組成物所使用者,例如可列舉:熔融球狀二氧化矽、熔融破碎二氧化矽、晶質二氧化矽、滑石、氧化鋁、鈦白、氮化矽等無機填充材料、有機矽酮粉末、聚乙烯粉末等有機填充材料。該等中,尤佳為使用熔融球狀二氧化矽。該等填充材料可單獨使用1種,亦可併用2種以上。 The sealing resin composition may further contain, for example, a filler (F). As the filler (F), users of general epoxy resin compositions for semiconductor sealing can be used, and examples thereof include fused spherical silica, fused and broken silica, crystalline silica, talc, and alumina. , Titanium white, silicon nitride and other inorganic fillers, organic silicone powder, polyethylene powder and other organic fillers. Among these, it is particularly preferable to use fused spherical silica. These fillers may be used alone or in combination of two or more.

又,作為填充材料(F)之形狀,並無特別限定,但就抑制密封用樹脂組成物之熔融黏度之上升、並且提高填充材料之含量之觀點而言,較佳儘 量為真球狀且粒度分佈寬。 In addition, the shape of the filler (F) is not particularly limited, but it is preferably from the viewpoint of suppressing an increase in the melt viscosity of the resin composition for sealing and increasing the content of the filler. The amount is truly spherical and the particle size distribution is wide.

於本實施形態中,填充劑(F)之含量較佳相對於密封用樹脂組成物整體,為35質量%以上,更佳為50質量%以上,尤佳為65質量%以上。藉由使填充劑(F)之含量為上述下限值以上,可提高使用密封用樹脂組成物形成之密封樹脂之低吸濕性及低熱膨脹性,更有效地提高耐濕可靠性及耐回焊性。 In this embodiment, the content of the filler (F) is preferably 35% by mass or more, more preferably 50% by mass or more, and even more preferably 65% by mass or more with respect to the entire sealing resin composition. When the content of the filler (F) is equal to or more than the above-mentioned lower limit value, the low hygroscopicity and the low thermal expansion property of the sealing resin formed using the sealing resin composition can be improved, and the moisture resistance reliability and the back resistance can be more effectively improved Weldability.

另一方面,填充劑(F)之含量較佳為95質量%以下,更佳為93質量%以下,尤佳為90質量%以下。藉由使填充劑(F)之含量為上述上限值以下,可抑制成形性伴隨密封用樹脂組成物之流動性降低而降低、及由高黏度化引起之接合線偏移等。 On the other hand, the content of the filler (F) is preferably 95% by mass or less, more preferably 93% by mass or less, and even more preferably 90% by mass or less. When the content of the filler (F) is equal to or less than the above-mentioned upper limit value, it is possible to prevent the moldability from being lowered as the flowability of the sealing resin composition is lowered, and the bonding wire is shifted due to an increase in viscosity.

(硬化促進劑(G)) (Hardening accelerator (G))

密封用樹脂組成物可進而含有例如硬化促進劑(G)。硬化促進劑(G)為促進環氧樹脂(A)之環氧基、與具有聯伸苯基骨架之苯酚芳烷基樹脂(B)之酚性羥基之交聯反應者即可,例如可使用一般之密封用環氧樹脂組成物所使用者。 The sealing resin composition may further contain, for example, a hardening accelerator (G). The hardening accelerator (G) may be one that accelerates the crosslinking reaction of the epoxy group of the epoxy resin (A) and the phenolic hydroxyl group of the phenol aralkyl resin (B) having a stretched phenyl skeleton. For example, it can be used For general sealing epoxy resin users.

於本實施形態中,硬化促進劑(G)例如可含有選自如下化合物中之1種或2種以上:有機膦、四取代鏻化合物、磷甜菜鹼(phosphobetaine)化合物、膦化合物與醌化合物之加成物、鏻化合物與矽烷化合物之加成物等含有磷原子之化合物;1,8-二氮雙環(5,4,0)十一烯-7、二甲苄胺、2-甲咪唑等所例示之脒或三級胺、上述脒或胺之四級鹽等含有氮原子之化合物。該等中,就提高硬化性之觀點而言,更佳含有含磷原子之化合物。又,就提高成形性與硬化性之平衡之觀點而言,更佳含有四取代鏻化合物、磷甜菜鹼化合 物、膦化合物與醌化合物之加成物、鏻化合物與矽烷化合物之加成物等具有潛伏性者。 In this embodiment, the hardening accelerator (G) may contain, for example, one or two or more compounds selected from the group consisting of organic phosphines, tetra-substituted phosphonium compounds, phosphobetaine compounds, phosphine compounds, and quinone compounds. Compounds containing phosphorus atoms, such as adducts, adducts of amidine compounds and silane compounds; 1,8-diazabicyclo (5,4,0) undecene-7, dimethylbenzylamine, 2-methylimidazole, etc. Examples of compounds containing nitrogen atoms include fluorene or tertiary amines, and quaternary salts of fluorene or amines. Among these, from the viewpoint of improving the hardenability, it is more preferable to contain a compound containing a phosphorus atom. From the viewpoint of improving the balance between moldability and hardenability, it is more preferable to contain a tetra-substituted phosphonium compound and a phosphorobetaine compound. Latent compounds, adducts of phosphine compounds and quinone compounds, adducts of amidine compounds and silane compounds, and the like.

作為密封用樹脂組成物中可使用之有機膦,例如可列舉:乙膦、苯膦等一級膦;二甲膦、二苯膦等二級膦;三甲膦、三乙膦、三丁膦、三苯膦等三級膦。 Examples of the organic phosphine that can be used in the sealing resin composition include primary phosphines such as ethylphosphine and phenylphosphine; secondary phosphines such as dimethylphosphine and diphenylphosphine; trimethylphosphine, triethylphosphine, tributylphosphine, triphenylphosphine Tertiary phosphines such as phenylphosphine.

作為密封用樹脂組成物中可使用之四取代鏻化合物,例如可列舉下述通式(13)所表示之化合物等。 Examples of the tetra-substituted fluorene compound that can be used in the sealing resin composition include a compound represented by the following general formula (13).

(於上述通式(13)中,P表示磷原子。R4、R5、R6及R7表示芳香族基或烷基。A表示芳香環上具有至少1個選自羥基、羧基、硫醇基中之任一官能基的芳香族有機酸之陰離子。AH表示芳香環上具有至少1個選自羥基、羧基、硫醇基中之任一官能基之芳香族有機酸。x、y為1~3之數,z為0~3之數,且x=y。) (In the general formula (13), P represents a phosphorus atom. R 4 , R 5 , R 6, and R 7 represent an aromatic group or an alkyl group. A represents that the aromatic ring has at least one member selected from a hydroxyl group, a carboxyl group, and a sulfur group. An anion of an aromatic organic acid having any functional group in an alcohol group. AH represents an aromatic organic acid having at least one functional group selected from a hydroxyl group, a carboxyl group, and a thiol group on an aromatic ring. X and y are 1 to 3, z is 0 to 3, and x = y.)

通式(13)所表示之化合物例如以如下方式進行操作而獲得,但並不限定於此。首先,將四取代鏻鹵化物、芳香族有機酸及鹼混入有機溶劑中均勻地混合,使該溶液系內產生芳香族有機酸陰離子。繼而,加入水後,可使通式(13)所表示之化合物沈澱。於通式(13)所表示之化合物中,較佳為鍵結於磷原子之R4、R5、R6及R7為苯基,且AH為芳香環上具有羥基之化合物、即酚類,且A為該酚類之陰離子。作為上述酚類,可例示:苯酚、甲酚、間苯二酚、兒茶酚等單環式酚類、萘酚、二羥基萘、 氫蒽醌等縮合多環式酚類、雙酚A、雙酚F、雙酚S等雙酚類、苯基苯酚、聯苯酚等多環式酚類等。 The compound represented by the general formula (13) is obtained by, for example, operating as follows, but is not limited thereto. First, a tetra-substituted phosphonium halide, an aromatic organic acid and a base are mixed into an organic solvent and mixed uniformly, so that an aromatic organic acid anion is generated in the solution system. Then, after adding water, the compound represented by the general formula (13) can be precipitated. Among the compounds represented by the general formula (13), R 4 , R 5 , R 6, and R 7 bonded to a phosphorus atom are preferably phenyl groups, and AH is a compound having a hydroxyl group on an aromatic ring, that is, phenols And A is the anion of the phenol. Examples of the phenols include monocyclic phenols such as phenol, cresol, resorcinol, and catechol, condensed polycyclic phenols such as naphthol, dihydroxynaphthalene, and hydroanthraquinone, bisphenol A, Bisphenols such as bisphenol F and bisphenol S, polycyclic phenols such as phenylphenol and biphenol.

作為密封用樹脂組成物中可使用之磷甜菜鹼化合物,例如可列舉下述通式(14)所表示之化合物等。 Examples of the phosphorus betaine compound that can be used in the sealing resin composition include a compound represented by the following general formula (14).

(於上述通式(14)中,R8表示碳數1~3之烷基,R9表示羥基。f為0~5之數,g為0~3之數。) (In the general formula (14), R 8 represents an alkyl group having 1 to 3 carbon atoms, and R 9 represents a hydroxyl group. F is a number of 0 to 5 and g is a number of 0 to 3.)

通式(14)所表示之化合物例如以如下方式進行操作而獲得。首先,經過如下步驟而獲得:使作為三級膦之三芳香族取代膦與重氮鎓鹽接觸,使三芳香族取代膦與重氮鎓鹽所具有之重氮鎓基進行取代。然而並不限定於此。 The compound represented by general formula (14) is obtained, for example, as follows. First, it is obtained by contacting a triaromatic substituted phosphine as a tertiary phosphine with a diazonium salt, and substituting the triaromatic substituted phosphine with a diazonium group of the diazonium salt. However, it is not limited to this.

作為密封用樹脂組成物中可使用之膦化合物與醌化合物之加成物,例如可列舉下述通式(15)所表示之化合物等。 Examples of the adduct of a phosphine compound and a quinone compound that can be used in the sealing resin composition include a compound represented by the following general formula (15).

(於上述通式(15)中,P表示磷原子。R10、R11及R12表示碳數1~12之烷基或碳數6~12之芳基,彼此可相同亦可不同。R13、R14及R15表示氫原子或碳數1~12之烴基,彼此可相同亦可不同,R14與R15亦可鍵結而形成環狀構造。) (In the above general formula (15), P represents a phosphorus atom. R 10 , R 11, and R 12 represent an alkyl group having 1 to 12 carbon atoms or an aryl group having 6 to 12 carbon atoms, which may be the same as or different from each other. R 13 , R 14 and R 15 represent a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms, which may be the same as or different from each other, and R 14 and R 15 may be bonded to form a cyclic structure.)

作為膦化合物與醌化合物之加成物所使用之膦化合物,例如較佳為三苯膦、三(烷基苯基)膦、三(烷氧基苯基)膦、三萘基膦、三(卞基)膦等於芳香環上未經取代或存在烷基、烷氧基等取代基者,作為烷基、烷氧基等取代基,可列舉具有1~6之碳數者。就容易入手之觀點而言,較佳為三苯膦。 As the phosphine compound used as an adduct of a phosphine compound and a quinone compound, for example, triphenylphosphine, tri (alkylphenyl) phosphine, tri (alkoxyphenyl) phosphine, trinaphthylphosphine, tris ( Amidino) phosphine is equivalent to those having no substituents on the aromatic ring or having substituents such as alkyl groups and alkoxy groups. Examples of substituents such as alkyl groups and alkoxy groups include those having 1 to 6 carbon atoms. From the viewpoint of easy availability, triphenylphosphine is preferred.

又,作為膦化合物與醌化合物之加成物所使用之醌化合物,可列舉苯醌、蒽醌類,其中就保存穩定性方面而言,較佳為對苯醌。 Examples of the quinone compound used as an adduct of a phosphine compound and a quinone compound include benzoquinone and anthraquinones. Among them, p-benzoquinone is preferred in terms of storage stability.

作為膦化合物與醌化合物之加成物之製造方法,可藉由於有機三級膦與苯醌類兩者可溶解之溶劑中使該等接觸、混合而獲得加成物。作為溶劑,較佳為丙酮或甲基乙基酮等酮類、且對加成物之溶解性低者。然而,並不限定於此。 As a method for producing an adduct of a phosphine compound and a quinone compound, the adduct can be obtained by contacting and mixing these in a solvent in which both the organic tertiary phosphine and benzoquinone are soluble. The solvent is preferably a ketone such as acetone or methyl ethyl ketone and has low solubility in the adduct. However, it is not limited to this.

於通式(15)所表示之化合物中,就降低密封用樹脂組成物之硬化物之熱時彈性模數方面而言,較佳為鍵結於磷原子之R10、R11及R12為苯基、且R13、R14及R15為氫原子之化合物亦即使1,4-苯醌與三苯膦加成而得之化合物。 Among the compounds represented by the general formula (15), in terms of reducing the thermal modulus of the hardened product of the resin composition for sealing, it is preferable that R 10 , R 11, and R 12 bonded to a phosphorus atom are Compounds in which phenyl and R 13 , R 14 and R 15 are hydrogen atoms are also compounds obtained by addition of 1,4-benzoquinone and triphenylphosphine.

作為密封用樹脂組成物中可使用之鏻化合物與矽烷化合物之加成物,例如可列舉下述通式(16)所表示之化合物等。 Examples of the adduct of a sulfonium compound and a silane compound that can be used in the sealing resin composition include a compound represented by the following general formula (16).

(於上述通式(16)中,P表示磷原子,Si表示矽原子。R16、R17、R18及R19分別表示具有芳香環或雜環之有機基、或脂肪族基,彼此可相同亦可 不同。式中R20為與基Y2及Y3鍵結之有機基。式中R21為與基Y4及Y5鍵結之有機基。Y2及Y3表示供質子性基將質子釋出而成之基,同一分子內之基Y2及Y3與矽原子鍵結而形成螯合構造。Y4及Y5表示供質子性基將質子釋出而成之基,同一分子內之基Y4及Y5與矽原子鍵結而形成螯合構造。R20、及R21彼此可相同亦可不同,Y2、Y3、Y4及Y5彼此可相同亦可不同。Z1為具有芳香環或雜環之有機基、或脂肪族基。) (In the above general formula (16), P represents a phosphorus atom, and Si represents a silicon atom. R 16 , R 17 , R 18, and R 19 each represent an organic group having an aromatic ring or a heterocyclic ring, or an aliphatic group, and may each other. The same or different. In the formula, R 20 is an organic group bonded to the groups Y 2 and Y 3. In the formula, R 21 is an organic group bonded to the groups Y 4 and Y 5. Y 2 and Y 3 represent proton donating properties The base is a base from which protons are released, and the bases Y 2 and Y 3 in the same molecule are bonded to a silicon atom to form a chelate structure. Y 4 and Y 5 represent bases from which a proton donating group releases a proton. The groups Y 4 and Y 5 in the same molecule are bonded to a silicon atom to form a chelate structure. R 20 and R 21 may be the same as or different from each other, and Y 2 , Y 3 , Y 4, and Y 5 may be the same or different from each other. Different. Z 1 is an organic group having an aromatic ring or a heterocyclic ring, or an aliphatic group.)

於通式(16)中,作為R16、R17、R18及R19,例如可列舉:苯基、甲苯基、甲氧基苯基、羥苯基、萘基、羥萘基、卞基、甲基、乙基、正丁基、正辛基及環己基等;該等中,更佳為苯基、甲苯基、甲氧基苯基、羥苯基、羥萘基等具有烷基、烷氧基、羥基等取代基之芳香族基或未經取代之芳香族基。 Examples of R 16 , R 17 , R 18 and R 19 in the general formula (16) include phenyl, tolyl, methoxyphenyl, hydroxyphenyl, naphthyl, hydroxynaphthyl, and fluorenyl , Methyl, ethyl, n-butyl, n-octyl, and cyclohexyl; among these, phenyl, tolyl, methoxyphenyl, hydroxyphenyl, hydroxynaphthyl, and the like have alkyl groups, Aromatic or unsubstituted aromatic groups having substituents such as alkoxy and hydroxyl groups.

又,於通式(16)中,R20為與Y2及Y3鍵結之有機基。同樣地,R21為與基Y4及Y5鍵結之有機基。Y2及Y3為供質子性基將質子釋出而成之基,同一分子內之基Y2及Y3與矽原子鍵結形成螯合構造。同樣地,Y4及Y5為供質子性基將質子釋出而成之基,同一分子內之基Y4及Y5與矽原子鍵結形成螯合構造。基R20及R21彼此可相同亦可不同,基Y2、Y3、Y4、及Y5彼此可相同亦可不同。此種通式(16)中之-Y2-R20-Y3-、及Y4-R21-Y5-所表示之基為由質子供體釋出2個質子而成之基構成者,作為質子供體,較佳為分子內具有至少2個羧基、或羥基之有機酸,進而較佳為構成芳香環之鄰接之碳上具有至少2個羧基或羥基之芳香族化合物,更佳為構成芳香環之鄰接之碳上具有至少2個羥基之芳香族化合物,例如可列舉:兒茶酚、五倍子酚、1,2-二羥基萘、2,3-二羥基萘、2,2'-聯苯酚、1,1'-雙-2-萘酚、水楊 酸、1-羥基-2-萘甲酸、3-羥基-2-萘甲酸、氯冉酸、鞣酸、2-羥基苄醇、1,2-環己二醇、1,2-丙二醇及甘油等;該等中,更佳為兒茶酚、1,2-二羥基萘、2,3-二羥基萘。 In Formula (16), R 20 is an organic group bonded to Y 2 and Y 3 . Similarly, R 21 is an organic group bonded to the groups Y 4 and Y 5 . Y 2 and Y 3 are proton-derived groups that release protons. The Y 2 and Y 3 groups in the same molecule are bonded to silicon atoms to form a chelate structure. Similarly, Y 4 and Y 5 are radicals in which proton donating groups release protons, and the radicals Y 4 and Y 5 in the same molecule are bonded to silicon atoms to form a chelate structure. The radicals R 20 and R 21 may be the same as or different from each other, and the radicals Y 2 , Y 3 , Y 4 , and Y 5 may be the same or different from each other. The base represented by -Y 2 -R 20 -Y 3 -and Y 4 -R 21 -Y 5 -in the general formula (16) is a base constituted by a proton donor releasing two protons. As the proton donor, an organic acid having at least two carboxyl groups or hydroxyl groups in the molecule is preferred, and an aromatic compound having at least two carboxyl groups or hydroxyl groups on adjacent carbons constituting an aromatic ring is more preferred, more preferably Examples of aromatic compounds having at least two hydroxyl groups on adjacent carbons constituting the aromatic ring include catechol, gallophenol, 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, and 2,2'- Biphenol, 1,1'-bis-2-naphthol, salicylic acid, 1-hydroxy-2-naphthoic acid, 3-hydroxy-2-naphthoic acid, chlororanic acid, tannic acid, 2-hydroxybenzyl alcohol, 1,2-cyclohexanediol, 1,2-propylene glycol, glycerin, and the like; among these, catechol, 1,2-dihydroxynaphthalene, and 2,3-dihydroxynaphthalene are more preferable.

又,通式(16)中之Z1表示具有芳香環或雜環之有機基或脂肪族基,作為該等之具體之例,可列舉:甲基、乙基、丙基、丁基、己基及辛基等脂肪族烴基、或苯基、卞基、萘基及聯苯基等芳香族烴基、環氧丙氧基丙基、巰丙基、胺基丙基等具有環氧丙氧基、巰基、胺基之烷基及乙烯基等反應性取代基等;該等中,就熱穩定性方面而言,更佳為甲基、乙基、苯基、萘基及聯苯基。 In addition, Z 1 in the general formula (16) represents an organic group or an aliphatic group having an aromatic ring or a heterocyclic ring. Specific examples of these include methyl, ethyl, propyl, butyl, and hexyl. And aliphatic hydrocarbon groups such as octyl, or aromatic hydrocarbon groups such as phenyl, fluorenyl, naphthyl, and biphenyl; glycidoxypropyl, mercaptopropyl, and aminopropyl; Reactive substituents such as mercapto, amine alkyl, and vinyl; among these, in terms of thermal stability, methyl, ethyl, phenyl, naphthyl, and biphenyl are more preferred.

作為鏻化合物與矽烷化合物之加成物之製造方法,向裝有甲醇之燒瓶中,加入苯基三甲氧基矽烷等矽烷化合物、2,3-二羥基萘等質子供體,進行溶解,繼而於室溫攪拌下滴加甲醇鈉-甲醇溶液。進而,於室溫攪拌下向其中滴加預先準備之將溴化四苯基鏻等四取代鏻鹵化物溶於甲醇而得之溶液後,析出結晶。將已析出之結晶過濾、水洗、真空乾燥後,獲得鏻化合物與矽烷化合物之加成物。然而,並不限定於此。 As a method for producing an adduct of a sulfonium compound and a silane compound, a flask containing methanol is charged with a silane compound such as phenyltrimethoxysilane and a proton donor such as 2,3-dihydroxynaphthalene, followed by dissolution. A sodium methoxide-methanol solution was added dropwise with stirring at room temperature. Furthermore, a solution prepared by dissolving a tetrasubstituted phosphonium halide such as tetraphenylphosphonium bromide in methanol in advance was added dropwise thereto with stirring at room temperature, and then crystals were precipitated. The precipitated crystals were filtered, washed with water, and dried under vacuum to obtain an adduct of an amidine compound and a silane compound. However, it is not limited to this.

於本實施形態中,硬化促進劑(G)之含量較佳相對於密封用樹脂組成物整體,為0.05質量%以上,更佳為0.1質量%以上,尤佳為0.15質量%以上。藉由使硬化促進劑(G)之含量為上述下限值以上,可有效地提高密封成形時之硬化性。 In this embodiment, the content of the hardening accelerator (G) is preferably 0.05% by mass or more, more preferably 0.1% by mass or more, and even more preferably 0.15% by mass or more with respect to the entire sealing resin composition. By making content of a hardening accelerator (G) more than the said lower limit, the hardenability at the time of sealing molding can be improved effectively.

另一方面,硬化促進劑(G)之含量較佳相對於密封用樹脂組成物整體,為1.0質量%以下,更佳為0.5質量%以下。藉由使硬化促進劑(G)之含量為上述上限值以下,可謀求提高密封成形時之流動性。 On the other hand, the content of the hardening accelerator (G) is preferably 1.0% by mass or less, and more preferably 0.5% by mass or less based on the entire sealing resin composition. When the content of the hardening accelerator (G) is equal to or less than the above-mentioned upper limit value, it is possible to improve the fluidity during sealing molding.

(其他成分(H)) (Other ingredients (H))

視需要可向密封用樹脂組成物中適當調配例如偶合劑、脫模劑、離子捕捉劑、低應力成分、難燃劑、著色劑、及抗氧化劑等各種添加劑中之1種以上。 If necessary, one or more of various additives such as a coupling agent, a release agent, an ion trapping agent, a low-stress component, a flame retardant, a colorant, and an antioxidant may be appropriately blended into the resin composition for sealing.

關於偶合劑,可包含選自例如環氧矽烷、巰基矽烷、胺基矽烷、烷基矽烷、脲基矽烷、乙烯基矽烷、甲基丙烯醯基矽烷等各種矽烷系化合物、鈦系化合物、鋁螯合物類、鋁/鋯系化合物等公知之偶合劑中之1種或2種以上。該等中,作為更有效地表現出本案發明之效果者,更佳包含環氧矽烷或胺基矽烷,就流動性等觀點而言,尤佳包含二級胺基矽烷。關於脫模劑,可包含例如選自巴西棕櫚蠟等天然蠟、褐煤酸酯蠟等合成蠟、硬脂酸鋅等高級脂肪酸及其金屬鹽類、以及石蠟中之1種或2種以上。關於離子捕捉劑,包含例如鋁碳酸鎂。關於低應力成分,包含例如矽酮橡膠。關於難燃劑,可包含選自例如氫氧化鋁、氫氧化鎂、硼酸鋅、鉬酸鋅、磷腈中之1種或2種以上。關於著色劑,包含例如碳黑。 The coupling agent may include various silane-based compounds selected from, for example, epoxy silane, mercapto silane, amine silane, alkyl silane, ureido silane, vinyl silane, methacryl methanosilane, and the like One or two or more of known coupling agents such as compounds and aluminum / zirconium-based compounds. Among these, as the effect of the present invention is more effectively exhibited, it is more preferable to include an epoxy silane or an amino silane, and it is more preferable to include a secondary amine silane from the viewpoint of fluidity and the like. The release agent may include one or two or more kinds selected from natural waxes such as carnauba wax, synthetic waxes such as montan wax, higher fatty acids such as zinc stearate and metal salts thereof, and paraffin wax. The ion trapping agent contains, for example, aluminum magnesium carbonate. The low-stress component includes, for example, silicone rubber. The flame retardant may include one or two or more kinds selected from, for example, aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, and phosphazene. The colorant includes, for example, carbon black.

作為密封用樹脂組成物,例如可使用如下者等:利用公知之方法將上述之各成分混合,進而利用輥、捏合機或擠出機等混練機進行熔融混練,冷卻之後進行粉碎而得者,粉碎後打錠成型為錠狀者,及視需要適當調整分散度或流動性等而得者。 As the sealing resin composition, for example, those obtained by mixing the above-mentioned components by a known method, and further performing melt-kneading using a kneading machine such as a roll, a kneader, or an extruder, and pulverizing after cooling, Those who are crushed to form an ingot after pulverization, and those who have appropriately adjusted the dispersion degree or fluidity as needed.

繼而,對半導體裝置100進行說明。 Next, the semiconductor device 100 will be described.

圖1係表示本實施形態之半導體裝置100之一例之剖面圖。半導體裝置100係包括如下部分之半導體封裝:基材10;半導體元件20,其搭載於基材10上;及密封樹脂30,其對半導體元件20進行密封。於圖1中,例示 有半導體裝置100為BGA封裝之情形。於此情形時,於基材10中與搭載半導體元件20之正面相反側之背面,設置有多個焊料球50。 FIG. 1 is a cross-sectional view showing an example of a semiconductor device 100 according to this embodiment. The semiconductor device 100 includes a semiconductor package including a base material 10, a semiconductor element 20 mounted on the base material 10, and a sealing resin 30 that seals the semiconductor element 20. In Figure 1, an example The semiconductor device 100 may be a BGA package. In this case, a plurality of solder balls 50 are provided on the back surface of the base material 10 opposite to the front surface on which the semiconductor element 20 is mounted.

半導體元件20經由接合線40而電連接於基材10。另一方面,半導體元件20亦可覆晶構裝於基材10上。 The semiconductor element 20 is electrically connected to the base material 10 via a bonding wire 40. On the other hand, the semiconductor element 20 may be mounted on the substrate 10 by flip-chip structure.

於本實施形態中,密封樹脂30係由上述之密封用樹脂組成物之硬化物構成。藉此,可於半導體元件20之密封時抑制產生殘料滯留。因此,可實現更穩定之半導體裝置100之製造。密封樹脂30例如藉由使用轉移成形法或壓縮成形法等公知之方法將密封用樹脂組成物密封成形而形成。 In this embodiment, the sealing resin 30 is composed of a hardened product of the above-mentioned sealing resin composition. This makes it possible to suppress the occurrence of residual material retention during the sealing of the semiconductor device 20. Therefore, more stable manufacturing of the semiconductor device 100 can be achieved. The sealing resin 30 is formed by sealing-molding a sealing resin composition using a known method such as a transfer molding method or a compression molding method.

繼而,對構造體102進行說明。 Next, the structure 102 will be described.

圖2係表示本實施形態之構造體102一例之剖面圖。構造體102係藉由MAP成形而形成之成形品。因此,藉由於構造體102中按每一半導體元件20進行單片化,可獲得多個半導體封裝。 FIG. 2 is a cross-sectional view showing an example of the structure body 102 according to this embodiment. The structure body 102 is a molded product formed by MAP molding. Therefore, by singulating each semiconductor element 20 in the structure body 102, a plurality of semiconductor packages can be obtained.

構造體102包括基材10、多個半導體元件20及密封樹脂30。多個半導體元件20排列於基材10上。於圖2中,例示有各半導體元件20經由接合線40電連接於基材10之情形。然而,並不限定於此,各半導體元件20亦可覆晶構裝於基材10。再者,基材10及半導體元件20可使用與半導體裝置100中所例示者相同者。 The structure body 102 includes a base material 10, a plurality of semiconductor elements 20, and a sealing resin 30. A plurality of semiconductor elements 20 are arranged on the base material 10. FIG. 2 illustrates a case where each semiconductor element 20 is electrically connected to the base material 10 via a bonding wire 40. However, the present invention is not limited to this, and each semiconductor element 20 may be mounted on the substrate 10 with a crystal structure. The base material 10 and the semiconductor element 20 can be the same as those exemplified in the semiconductor device 100.

密封樹脂30係對多個半導體元件20進行密封。密封樹脂30由上述之密封用樹脂組成物之硬化物構成。藉此,可於密封成形時抑制產生殘料滯留。因此,可更穩定地製造構造體102及將其單片化而獲得之半導體裝置。密封樹脂30例如藉由使用轉移成形法或壓縮成形法等公知之 方法將密封用樹脂組成物密封成形而形成。 The sealing resin 30 seals a plurality of semiconductor elements 20. The sealing resin 30 is made of a cured product of the above-mentioned sealing resin composition. This makes it possible to suppress the occurrence of residual material retention during the sealing molding. Therefore, the structure 102 and the semiconductor device obtained by singulating the structure 102 can be manufactured more stably. The sealing resin 30 is known, for example, by using a transfer molding method or a compression molding method. Methods A sealing resin composition is formed by sealing.

實施例 Examples

繼而,對本發明之實施例進行說明。 Next, an embodiment of the present invention will be described.

(具有聯伸苯基骨架之苯酚芳烷基樹脂(B)及僅具有一個酚性羥基之化合物(C)之合成) (Synthesis of phenol aralkyl resin (B) having a biphenyl group and a compound (C) having only one phenolic hydroxyl group) (合成例1) (Synthesis example 1)

首先,於可分離式燒瓶安裝攪拌裝置、溫度計、回流冷卻器、及氮氣導入口。繼而,稱量苯酚(關東化學股份有限公司製造特級試劑,「phenol」,融點41℃,分子量94,純度99.3%)517質量份、預先弄碎成粒狀之4,4'-雙氯甲基聯苯(和光純藥工業股份有限公司製造,「4,4'-Dichloromethylbiphenyl」,融點126℃,純度95%,分子量251)251質量份置於上述可分離式燒瓶中,一面進行氮氣置換一面加熱,於苯酚開始熔融之同時開始進行攪拌。繼而,使系統內溫度為65℃而反應3小時之後,減壓為90kPa且以80℃進行1小時反應。繼而,將系統內溫度降至70℃,添加6質量份檸檬酸三鈉,攪拌30分鐘。繼而,添加已加溫之蒸餾水100質量份,升溫至140℃之後,於1kPa下對未反應成分進行蒸餾去除1小時,進而以180℃,於0.2kPa下對未反應成分進行蒸餾去除1小時。再者,保存藉由該未反應成分之蒸餾去除而獲得之餾分。進而,使暫時取出之產物均勻溶解於甲苯500質量份。進行2次把其移至分液漏斗添加蒸餾水150質量份並進行振盪之後去掉水層的操作(水洗)。然後,將把甲苯蒸餾去除獲得之產物利用氣相層析法進行分析,另外對上述未反應成分進行水洗、分子蒸餾,藉此將把低分子量成分等去除而得者添加至該產物中。如此, 獲得包含具有聯伸苯基骨架之苯酚芳烷基樹脂(B)、僅具有一個酚性羥基之化合物(C)、下述式(2)表示之化合物(D)、及下述式(3)表示之化合物(E)之混合物。 First, a separable flask was equipped with a stirring device, a thermometer, a reflux cooler, and a nitrogen inlet. Next, weigh 517 parts by mass of phenol (a special reagent manufactured by Kanto Chemical Co., Ltd., "phenol", a melting point of 41 ° C, a molecular weight of 94, and a purity of 99.3%). 251 parts by mass of phenylbiphenyl (manufactured by Wako Pure Chemical Industries, Ltd., "4,4'-Dichloromethylbiphenyl", melting point of 126 ° C, purity of 95%, molecular weight of 251) was placed in the separable flask, and nitrogen gas was replaced on the side While heating, stirring was started while the phenol started to melt. Subsequently, after the reaction was performed at a temperature of 65 ° C. for 3 hours, the pressure was reduced to 90 kPa, and the reaction was performed at 80 ° C. for 1 hour. Then, the temperature in the system was lowered to 70 ° C., 6 parts by mass of trisodium citrate was added, and the mixture was stirred for 30 minutes. Next, 100 parts by mass of the heated distilled water was added, and the temperature was raised to 140 ° C., and then the unreacted components were distilled off at 1 kPa for 1 hour, and then the unreacted components were distilled off at 180 ° C. and 0.2 kPa for 1 hour. Furthermore, the fraction obtained by distillation removal of this unreacted component was stored. Further, the temporarily taken out product was uniformly dissolved in 500 parts by mass of toluene. This operation was carried out twice, and 150 parts by mass of distilled water was added to the separatory funnel. After shaking, the water layer was removed (washing). Then, the product obtained by distilling off toluene is analyzed by gas chromatography, and the above-mentioned unreacted components are washed with water and molecular distillation, thereby adding low molecular weight components and the like to the product. in this way, A phenol aralkyl resin (B) containing a biphenyl group, a compound (C) having only one phenolic hydroxyl group, a compound (D) represented by the following formula (2), and the following formula (3) were obtained. A mixture of the compound (E) shown.

於所得之上述混合物中,化合物(C)之含量相對於具有聯伸苯基骨架之苯酚芳烷基樹脂(B),為1.0質量%。又,化合物(C)含有下述式(1)表示之化合物。下述式(1)表示之化合物之含量相對於具有聯伸苯基骨架之苯酚芳烷基樹脂(B),為720ppm。化合物(D)之含量相對於具有聯伸苯基骨架之苯酚芳烷基樹脂(B),為1900ppm。化合物(E)之含量相對於具有聯伸苯基骨架之苯酚芳烷基樹脂(B),為120ppm。再者,化合物(C)、式(1)表示之化合物、化合物(D)、及化合物(E)各自之含量係藉由氣相層析法進行分析。以下,關於合成例2~4,為同樣。 The content of the compound (C) in the obtained mixture was 1.0% by mass based on the phenol aralkyl resin (B) having a biphenyl group. The compound (C) contains a compound represented by the following formula (1). The content of the compound represented by the following formula (1) was 720 ppm based on the phenol aralkyl resin (B) having a biphenyl group. The content of the compound (D) was 1900 ppm based on the phenol aralkyl resin (B) having a biphenyl group. The content of the compound (E) was 120 ppm based on the phenol aralkyl resin (B) having a biphenyl group. The content of each of the compound (C), the compound represented by the formula (1), the compound (D), and the compound (E) was analyzed by gas chromatography. Hereinafter, the same applies to Synthesis Examples 2 to 4.

(合成例2) (Synthesis example 2)

除變更經分子蒸餾之未反應成分之添加量以外,與合成例1同樣地獲得包含具有聯伸苯基骨架之苯酚芳烷基樹脂(B)、僅具有一個酚性羥基之化合物(C)、上述式(2)表示之化合物(D)、及上述式(3)表示之化合物(E)的混合物。於所得之上述混合物中,化合物(C)之含量相對於具有聯伸苯基骨架之苯酚芳烷基樹脂(B),為1.5質量%。又,化合物(C)含有上述式(1)表示之化合物。上述式(1)表示之化合物之含量相對於具有聯伸苯基骨架之苯酚芳烷基樹脂(B),為1000ppm。化合物(D)之含量相對於具有聯伸苯基骨架之苯酚芳烷基樹脂(B),為2630ppm。化合物(E)之含量相對於具有聯伸苯基骨架之苯酚芳烷基樹脂(B),為160ppm。 A compound (C) containing a phenol aralkyl resin (B) having a biphenyl group and a compound (C) having only one phenolic hydroxyl group was obtained in the same manner as in Synthesis Example 1 except that the addition amount of the unreacted components through molecular distillation was changed. A mixture of the compound (D) represented by the formula (2) and the compound (E) represented by the formula (3). The content of the compound (C) in the obtained mixture was 1.5% by mass based on the phenol aralkyl resin (B) having a biphenyl group. The compound (C) contains a compound represented by the formula (1). The content of the compound represented by the above formula (1) was 1,000 ppm based on the phenol aralkyl resin (B) having a biphenyl group. The content of the compound (D) was 2630 ppm based on the phenol aralkyl resin (B) having a biphenyl group. The content of the compound (E) was 160 ppm based on the phenol aralkyl resin (B) having a biphenyl group.

(合成例3) (Synthesis example 3)

除變更經分子蒸餾之未反應成分之添加量以外,與合成例1同樣地獲得包含具有聯伸苯基骨架之苯酚芳烷基樹脂(B)、僅具有一個酚性羥基之化合物(C)、上述式(2)表示之化合物(D)、及上述式(3)表示之化合物(E)的混合物。於所得之上述混合物中,化合物(C)之含量相對於具有聯伸苯基骨架之苯酚芳烷基樹脂(B),為0.7質量%。又,化合物(C)含有上述式(1)表示之化合物。上述式(1)表示之化合物之含量相對於具有聯伸苯基骨架之苯酚芳烷基樹脂(B),為500ppm。化合物(D)之含量相對於具有聯伸苯基骨架之苯酚芳烷基樹脂(B),為1310ppm。化合物(E)之含量相對於具有聯伸苯基骨架之苯酚芳烷基樹脂(B),為80ppm。 A compound (C) containing a phenol aralkyl resin (B) having a biphenylene skeleton, a compound (C) having only one phenolic hydroxyl group, and A mixture of the compound (D) represented by the formula (2) and the compound (E) represented by the formula (3). The content of the compound (C) in the obtained mixture was 0.7% by mass based on the phenol aralkyl resin (B) having a biphenyl group. The compound (C) contains a compound represented by the formula (1). The content of the compound represented by the above formula (1) was 500 ppm based on the phenol aralkyl resin (B) having a biphenyl group. The content of the compound (D) was 1310 ppm based on the phenol aralkyl resin (B) having a biphenyl group. The content of the compound (E) was 80 ppm based on the phenol aralkyl resin (B) having a biphenyl group.

(合成例4) (Synthesis example 4)

首先,向附有攪拌機與冷卻器之燒瓶中加入苯酚564質量份、及雙(甲 氧基甲基)聯苯484質量份,並向其中滴加硫酸二乙酯15.4質量份。繼而,一面將系統內溫度保持為160℃一面反應3小時。於該期間內,將生成之乙醇蒸餾去除。反應結束後進行冷卻,將水洗進行3次。分離油層,利用減壓蒸餾將未反應苯酚蒸餾去除,藉此獲得包含具有聯伸苯基骨架之苯酚芳烷基樹脂(B)、及僅具有一個酚性羥基之化合物(C)之混合物。再者,於本合成例中,不進行經分子蒸餾之未反應成分之添加。於所得之上述混合物中,化合物(C)之含量相對於具有聯伸苯基骨架之苯酚芳烷基樹脂(B)為0.6質量%。 First, to a flask equipped with a stirrer and a cooler, 564 parts by mass of phenol and bis (a 484 parts by mass of oxymethyl) biphenyl, and 15.4 parts by mass of diethyl sulfate were added dropwise thereto. Then, the temperature in the system was maintained at 160 ° C while reacting for 3 hours. During this period, the ethanol produced was distilled off. After completion of the reaction, cooling was performed, and washing with water was performed three times. The oil layer was separated, and unreacted phenol was distilled off under reduced pressure to obtain a mixture containing a phenol aralkyl resin (B) having a biphenyl group and a compound (C) having only one phenolic hydroxyl group. In addition, in this synthesis example, the addition of unreacted components through molecular distillation was not performed. The content of the compound (C) in the obtained mixture was 0.6% by mass based on the phenol aralkyl resin (B) having a biphenylene skeleton.

另一方面,於上述混合物中不含有上述式(2)表示之化合物(D)及上述式(3)表示之化合物(E)。此處,所謂混合物中不含有,係指含量相對於混合物整體未達1ppm之情形。又,化合物(C)不含上述式(1)表示之化合物。 On the other hand, the compound (D) represented by the formula (2) and the compound (E) represented by the formula (3) are not contained in the mixture. Here, the term "not contained in the mixture" refers to a case where the content is less than 1 ppm with respect to the entire mixture. The compound (C) does not include the compound represented by the formula (1).

(密封用樹脂組成物) (Resin composition for sealing)

針對實施例1~4及比較例1~2之各者,以如下方式調整密封用樹脂組成物。首先,按照表1所示之組成,使用混合機於15~28℃將各成分混合之後,於70~100℃進行輥壓混練。繼而,將其冷卻,進行粉碎而獲得密封用樹脂組成物。再者,針對具有聯伸苯基骨架之苯酚芳烷基樹脂(B)、化合物(C)、化合物(D)及化合物(E),分別使用實施例1及實施例2中利用合成例1獲得之上述混合物、實施例3中利用合成例2獲得之上述混合物、實施例4中利用合成例3獲得之上述混合物、比較例1及比較例2中利用合成例4獲得之上述混合物。 Regarding each of Examples 1 to 4 and Comparative Examples 1 to 2, the sealing resin composition was adjusted as follows. First, according to the composition shown in Table 1, using a mixer to mix the ingredients at 15-28 ° C, roll-kneading was performed at 70-100 ° C. Then, this was cooled and pulverized to obtain a sealing resin composition. Furthermore, the phenol aralkyl resin (B), the compound (C), the compound (D), and the compound (E) having a biphenyl group were obtained using Synthesis Example 1 in Example 1 and Example 2, respectively. The aforementioned mixture, the aforementioned mixture obtained in Synthesis Example 2 in Example 3, the aforementioned mixture obtained in Synthesis Example 3 in Example 4, and the aforementioned mixture obtained in Synthesis Example 4 in Comparative Example 1 and Comparative Example 2.

表1中之各成分之詳細情況如下所述。再者,表1所示之各成分之調 配比率全部係指相對於密封用樹脂組成物整體之調配比率(質量%或ppm)。 Details of each component in Table 1 are as follows. In addition, the components shown in Table 1 are adjusted. All the blending ratios refer to blending ratios (mass% or ppm) with respect to the entire sealing resin composition.

(環氧樹脂(A)) (Epoxy (A))

環氧樹脂1:含有伸苯基骨架之苯酚芳烷基型環氧樹脂(NC-2000,日本化藥股份有限公司製造) Epoxy resin 1: phenol aralkyl type epoxy resin containing phenylene skeleton (NC-2000, manufactured by Nippon Kayaku Co., Ltd.)

環氧樹脂2:聯苯型環氧樹脂(YX4000K,三菱化學股份有限公司製造) Epoxy resin 2: Biphenyl epoxy resin (YX4000K, manufactured by Mitsubishi Chemical Corporation)

(具有聯伸苯基骨架之苯酚芳烷基樹脂(B)) (Phenylaralkyl resin (B) with a biphenyl group)

含有聯伸苯基骨架之苯酚芳烷基樹脂1:藉由上述合成例1合成之具有聯伸苯基骨架之苯酚芳烷基樹脂(B) Phenol aralkyl resin having a stretched phenyl skeleton 1: Phenol aralkyl resin having a stretched phenyl skeleton synthesized by the above Synthesis Example 1 (B)

含有聯伸苯基骨架之苯酚芳烷基樹脂2:藉由上述合成例2合成之具有聯伸苯基骨架之苯酚芳烷基樹脂(B) Phenol aralkyl resin with a stretched phenyl skeleton 2: Phenol aralkyl resin (B) with a stretched phenyl skeleton synthesized by the above Synthesis Example 2

含有聯伸苯基骨架之苯酚芳烷基樹脂3:藉由上述合成例3合成之具有聯伸苯基骨架之苯酚芳烷基樹脂(B) Phenol aralkyl resin with a stretched phenyl skeleton 3: Phenol aralkyl resin with a stretched phenyl skeleton synthesized by the above Synthesis Example 3 (B)

含有聯伸苯基骨架之苯酚芳烷基樹脂4:藉由上述合成例4合成之具有聯伸苯基骨架之苯酚芳烷基樹脂(B) Phenol aralkyl resin with a stretched phenyl skeleton 4: Phenol aralkyl resin (B) with a stretched phenyl skeleton synthesized by the above Synthesis Example 4

(僅具有一個酚性羥基之化合物(C)) (Compound (C) having only one phenolic hydroxyl group)

化合物(C1):藉由上述合成例1合成之化合物(C) Compound (C1): Compound (C) synthesized by the above Synthesis Example 1

化合物(C2):藉由上述合成例2合成之化合物(C) Compound (C2): Compound (C) synthesized by the above Synthesis Example 2

化合物(C3):藉由上述合成例3合成之化合物(C) Compound (C3): Compound (C) synthesized by the above Synthesis Example 3

化合物(C4):藉由上述合成例4合成之化合物(C) Compound (C4): Compound (C) synthesized by the above Synthesis Example 4

(填充劑(F)) (Filler (F))

填充劑1:球狀熔融二氧化矽(電氣化學工業製造,FB560(平均粒徑30μm)) Filler 1: spherical fused silica (manufactured by Denka Kogyo Co., Ltd., FB560 (average particle size: 30 μm))

填充劑2:球狀熔融二氧化矽(Admatechs股份有限公司製造,SO-25R(平均粒徑0.5μm)) Filler 2: spherical fused silica (manufactured by Admatechs Co., Ltd., SO-25R (average particle size 0.5 μm))

(硬化促進劑(G)) (Hardening accelerator (G))

硬化促進劑1:下述式(11)所表示之化合物 Hardening accelerator 1: Compound represented by the following formula (11)

硬化促進劑2:下述式(12)所表示之化合物 Hardening accelerator 2: Compound represented by the following formula (12)

[硬化促進劑1之合成方法] [Synthesis method of hardening accelerator 1]

向附有冷卻管及攪拌裝置之可分離式燒瓶中加入苯醌6.49g(0.060mol)、三苯膦17.3g(0.066mol)及丙酮40ml,於攪拌下,以室溫進行反應。將所析出之結晶用丙酮洗淨後,進行過濾、乾燥,獲得暗綠色結晶之硬化促進劑1。 To a separable flask equipped with a cooling tube and a stirring device, 6.49 g (0.060 mol) of benzoquinone, 17.3 g (0.066 mol) of triphenylphosphine and 40 ml of acetone were added, and the reaction was performed at room temperature with stirring. The precipitated crystals were washed with acetone, and then filtered and dried to obtain a hardening accelerator 1 for dark green crystals.

[硬化促進劑2之合成方法] [Synthesis method of hardening accelerator 2]

向附有冷卻管及攪拌裝置之可分離式燒瓶中加入2,3-二羥基萘12.81g(0.080mol)、溴化四苯基鏻16.77g(0.040mol)及甲醇100ml,進行攪拌而使其均勻地溶解。向燒瓶內緩緩滴加預先將氫氧化鈉1.60g(0.04ml)溶解於10ml之甲醇而得之氫氧化鈉溶液後,析出結晶。將所析出之結晶過濾、水洗、真空乾燥,獲得硬化促進劑2。 In a separable flask equipped with a cooling tube and a stirring device, 12.81 g (0.080 mol) of 2,3-dihydroxynaphthalene, 16.77 g (0.040 mol) of tetraphenylphosphonium bromide, and 100 ml of methanol were added and stirred Dissolve evenly. A sodium hydroxide solution prepared by dissolving 1.60 g (0.04 ml) of sodium hydroxide in 10 ml of methanol was slowly added dropwise to the flask, and then crystals were precipitated. The precipitated crystal was filtered, washed with water, and dried under vacuum to obtain a hardening accelerator 2.

(其他成分(H)) (Other ingredients (H))

偶合劑1:N-苯基-3-胺基丙基三甲氧基矽烷(信越化學工業股份有限公司製造,KBM-573) Coupling agent 1: N-phenyl-3-aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Industry Co., Ltd., KBM-573)

偶合劑2:3-環氧丙氧丙基三甲氧基矽烷(信越化學工業股份有限公司製造,KBM-403) Coupling agent 2: 3-glycidoxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-403)

離子捕捉劑:鋁碳酸鎂(協和化學工業股份有限公司製造,DHT-4H) Ion trapping agent: aluminum magnesium carbonate (manufactured by Kyowa Chemical Industry Co., Ltd., DHT-4H)

脫模劑1:巴西棕櫚蠟(Nikko Fine Products股份有限公司製造,Nikko carnauba) Release agent 1: Carnauba wax (manufactured by Nikko Fine Products Co., Ltd., Nikko carnauba)

脫模劑2:胺基甲酸酯改質氧化聚乙烯蠟(NIPPON SEIRO股份有限公司製造,NSP-6010P) Release agent 2: Urethane modified oxidized polyethylene wax (manufactured by NIPPON SEIRO Co., Ltd., NSP-6010P)

著色劑:碳黑(三菱化學股份有限公司製造,MA-600) Colorant: Carbon black (manufactured by Mitsubishi Chemical Corporation, MA-600)

(成形性評價) (Formability evaluation)

針對實施例1~4及比較例1~2之各者,藉由所得之密封用樹脂組成物,使用低壓轉移成形機,於模具溫度175℃、注入壓力100kg/cm2、預熱3秒、注入時間7秒、硬化時間45秒之條件下,將80針腳四面扁平封裝(80pQFP,Cu製引線框架,封裝尺寸14mm×20mm×2.0mmt)密封成形直至達到500組整沖。此處,將於500組整沖中、因開模時殘料(密封用樹脂組成物之殘存物)附著殘存於柱塞或模具而手動去除殘料之次數作為殘料滯留之個數示於表1中。此處,對於殘料滯留之個數為2以下者可評價為成形性為良好。 For each of Examples 1 to 4 and Comparative Examples 1 to 2, the obtained sealing resin composition was subjected to a low-pressure transfer molding machine at a mold temperature of 175 ° C, an injection pressure of 100 kg / cm 2 , and a preheating time of 3 seconds. Under the conditions of an injection time of 7 seconds and a hardening time of 45 seconds, an 80-pin four-sided flat package (80pQFP, Cu lead frame, package size 14mm × 20mm × 2.0mmt) was hermetically sealed until it reached 500 sets of full punch. Here, the number of times of manual removal of the residual material (residual material of the sealing resin composition) during mold opening in 500 sets of blanking is adhered to the plunger or the mold, and the number of residual materials is shown as the number of residual materials retained. in FIG. 1. Here, when the number of remaining materials is 2 or less, it can be evaluated that the moldability is good.

Claims (5)

一種密封用樹脂組成物,其含有:環氧樹脂(A);具有聯伸苯基(biphenylene)骨架之苯酚芳烷基樹脂(B);及僅具有一個酚性羥基之化合物(C),該化合物(C)含有下述式(1)表示之化合物;
Figure TWI666307B_C0001
該密封用樹脂組成物進而含有下述式(2)表示之化合物(D)及下述式(3)表示之化合物(E),該化合物(E)之含量相對於密封用樹脂組成物整體,為1ppm以上且50ppm以下,
Figure TWI666307B_C0002
Figure TWI666307B_C0003
A resin composition for sealing, comprising: an epoxy resin (A); a phenol aralkyl resin (B) having a biphenylene skeleton; and a compound (C) having only one phenolic hydroxyl group, the Compound (C) contains a compound represented by the following formula (1);
Figure TWI666307B_C0001
The sealing resin composition further contains a compound (D) represented by the following formula (2) and a compound (E) represented by the following formula (3), and the content of the compound (E) relative to the entire sealing resin composition, 1ppm or more and 50ppm or less,
Figure TWI666307B_C0002
Figure TWI666307B_C0003
如申請專利範圍第1項之密封用樹脂組成物,其中,該式(1)表示之化合物之含量相對於該密封用樹脂組成物整體,為10ppm以上且300ppm以下。The resin composition for sealing as claimed in item 1 of the patent application, wherein the content of the compound represented by the formula (1) is 10 ppm or more and 300 ppm or less with respect to the entire resin composition for sealing. 如申請專利範圍第1或2項之密封用樹脂組成物,其中,該化合物(C)之含量相對於該密封用樹脂組成物整體,為1ppm以上且3000ppm以下。The resin composition for sealing according to claim 1 or 2, wherein the content of the compound (C) is 1 ppm or more and 3000 ppm or less with respect to the entire resin composition for sealing. 一種半導體裝置,其具備:基材;搭載於該基材上之半導體元件;及密封樹脂:由申請專利範圍第1至3項中任一項之密封用樹脂組成物之硬化物構成,且對該半導體元件進行密封。A semiconductor device comprising: a base material; a semiconductor element mounted on the base material; and a sealing resin: consisting of a cured product of the sealing resin composition according to any one of the patent application items 1 to 3, and The semiconductor element is sealed. 一種構造體,其具備:基材;搭載於該基材上之多個半導體元件;及密封樹脂:由申請專利範圍第1至3項中任一項之密封用樹脂組成物之硬化物構成,且對該多個半導體元件進行密封。A structure comprising: a base material; a plurality of semiconductor elements mounted on the base material; and a sealing resin: consisting of a hardened product of the sealing resin composition according to any one of claims 1 to 3, And the plurality of semiconductor elements are sealed.
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