TWI662319B - Light pipe structure, manufacturing method tehreof and image sensing device - Google Patents
Light pipe structure, manufacturing method tehreof and image sensing device Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 216
- 238000000034 method Methods 0.000 claims description 83
- 239000000463 material Substances 0.000 claims description 67
- 238000007789 sealing Methods 0.000 claims description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 239000011241 protective layer Substances 0.000 claims description 15
- 238000001459 lithography Methods 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000002955 isolation Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
一種光管結構，包括介電層、光管層與氣隙。介電層設置於基底上，其中在介電層中具有第一開口。光管層設置於第一開口中。氣隙位於光管層與第一開口的側壁之間。A light pipe structure includes a dielectric layer, a light pipe layer, and an air gap. The dielectric layer is disposed on the substrate, wherein the dielectric layer has a first opening. The light pipe layer is disposed in the first opening. The air gap is located between the light pipe layer and the sidewall of the first opening.
Description
本發明是有關於一種光管結構、其製造方法及影像感測元件，且特別是有關於一種具有氣隙的光管結構、其製造方法及影像感測元件。The invention relates to a light pipe structure, a manufacturing method thereof and an image sensing element, and more particularly to a light pipe structure with an air gap, a manufacturing method thereof, and an image sensing element.
光管結構可用於捕捉與聚集入射光，常用於提升如影像感測元件等光學元件的感光度。然而，當入射光的入射角度超過光管結構所能產生全反射的臨界角度時，光管結構將無法有效地捕捉入射光。因此，如何提高光管結構所能夠產生全反射的臨界角度，來捕捉與聚集更大量的入射光，以進一步地提高影像感測元件的感光度為目前業界積極發展的目標。The light pipe structure can be used to capture and focus incident light, and is often used to improve the sensitivity of optical elements such as image sensing elements. However, when the incident angle of the incident light exceeds the critical angle that the light pipe structure can generate total reflection, the light pipe structure will not be able to effectively capture the incident light. Therefore, how to increase the critical angle of the total reflection that the light pipe structure can generate to capture and collect a larger amount of incident light, and to further improve the sensitivity of the image sensing element is the current active development goal of the industry.
本發明提供一種光管結構及其製造方法，其可有效地提高光管結構所能夠產生全反射的臨界角度。The invention provides a light pipe structure and a manufacturing method thereof, which can effectively improve the critical angle that the light pipe structure can generate total reflection.
本發明提供一種影像感測元件，其可具有較佳的感光度。The invention provides an image sensing element, which can have better sensitivity.
本發明提出一種光管結構，包括介電層、光管層與氣隙。介電層設置於基底上，其中在介電層中具有第一開口。光管層設置於第一開口中。氣隙位於光管層與第一開口的側壁之間。The invention provides a light pipe structure including a dielectric layer, a light pipe layer and an air gap. The dielectric layer is disposed on the substrate, wherein the dielectric layer has a first opening. The light pipe layer is disposed in the first opening. The air gap is located between the light pipe layer and the sidewall of the first opening.
依照本發明的一實施例所述，在上述光管結構中，光管層的折射率例如是大於氣隙的折射率。According to an embodiment of the present invention, in the light pipe structure, a refractive index of the light pipe layer is, for example, a refractive index greater than an air gap.
依照本發明的一實施例所述，在上述光管結構中，更可包括保護層。保護層設置於氣隙與介電層之間。According to an embodiment of the present invention, the light pipe structure may further include a protective layer. The protective layer is disposed between the air gap and the dielectric layer.
依照本發明的一實施例所述，在上述光管結構中，更可包括封口層。封口層覆蓋光管層與介電層的頂面，且封住第一開口。According to an embodiment of the present invention, the light pipe structure may further include a sealing layer. The sealing layer covers the top surfaces of the light pipe layer and the dielectric layer, and seals the first opening.
依照本發明的一實施例所述，在上述光管結構中，更包括支撐層。支撐層設置封口層與光管層之間以及封口層與介電層的頂面之間，且具有暴露出氣隙的多個第二開口。According to an embodiment of the present invention, the light pipe structure further includes a support layer. The support layer is provided between the sealing layer and the light pipe layer and between the sealing layer and the top surface of the dielectric layer, and has a plurality of second openings exposing an air gap.
依照本發明的一實施例所述，在上述光管結構中，支撐層的材料例如是光阻材料或硬罩幕材料。According to an embodiment of the present invention, in the light pipe structure, a material of the supporting layer is, for example, a photoresist material or a hard mask material.
本發明提出一種影像感測元件，包括上述光管結構與感光元件。感光元件設置於光管結構的基底中，且位於光管結構的光管層下方。The invention provides an image sensing element, which includes the light pipe structure and a photosensitive element. The photosensitive element is disposed in the base of the light pipe structure and is located below the light pipe layer of the light pipe structure.
依照本發明的一實施例所述，在上述影像感測元件中，更包括彩色濾光層與微透鏡。彩色濾光層設置於光管結構的光管層上方。微透鏡設置於彩色濾光層上。According to an embodiment of the present invention, the image sensing device further includes a color filter layer and a micro lens. The color filter layer is disposed above the light pipe layer of the light pipe structure. The micro lens is disposed on the color filter layer.
本發明提出一種光管結構的製造方法，包括以下步驟。提供基底。於基底上形成介電層。於介電層中形成第一開口。於第一開口中形成光管層。於光管層與第一開口的側壁之間形成氣隙。The invention provides a manufacturing method of a light pipe structure, which includes the following steps. Provide a substrate. A dielectric layer is formed on the substrate. A first opening is formed in the dielectric layer. A light pipe layer is formed in the first opening. An air gap is formed between the light pipe layer and the sidewall of the first opening.
依照本發明的一實施例所述，在上述光管結構的製造方法中，第一開口的形成方法例如是對介電層進行圖案化製程。According to an embodiment of the present invention, in the method for manufacturing a light pipe structure, a method for forming the first opening is, for example, a patterning process of a dielectric layer.
依照本發明的一實施例所述，在上述光管結構的製造方法中，光管層與氣隙的形成方法可包括以下步驟。於第一開口的側壁上形成犧牲襯層。形成填滿第一開口且覆蓋犧牲襯層的光管材料層。移除第一開口以外的光管材料層，而形成光管層，且暴露出犧牲襯層。移除犧牲襯層，而形成氣隙。According to an embodiment of the present invention, in the method for manufacturing a light pipe structure, a method for forming a light pipe layer and an air gap may include the following steps. A sacrificial liner is formed on a sidewall of the first opening. A light pipe material layer is formed to fill the first opening and cover the sacrificial liner. The light pipe material layer outside the first opening is removed to form a light pipe layer, and the sacrificial liner is exposed. The sacrificial liner is removed and an air gap is formed.
依照本發明的一實施例所述，在上述光管結構的製造方法中，犧牲襯層的形成方法可包括以下步驟。於第一開口中形成共形的犧牲層。對犧牲層進行回蝕刻製程。According to an embodiment of the present invention, in the method for manufacturing a light pipe structure, a method for forming a sacrificial liner layer may include the following steps. A conformal sacrificial layer is formed in the first opening. An etch-back process is performed on the sacrificial layer.
依照本發明的一實施例所述，在上述光管結構的製造方法中，第一開口以外的光管材料層的移除方法例如是化學機械研磨法。According to an embodiment of the present invention, in the method for manufacturing a light pipe structure, a method for removing a light pipe material layer other than the first opening is, for example, a chemical mechanical polishing method.
依照本發明的一實施例所述，在上述光管結構的製造方法中，犧牲襯層的移除方法例如是濕式蝕刻法。According to an embodiment of the present invention, in the method for manufacturing a light pipe structure, a method for removing the sacrificial liner is, for example, a wet etching method.
依照本發明的一實施例所述，在上述光管結構的製造方法中，更可包括在形成犧牲襯層之前，於第一開口中形成共形的保護層。According to an embodiment of the present invention, in the method for manufacturing a light pipe structure, the method may further include forming a conformal protective layer in the first opening before forming the sacrificial liner layer.
依照本發明的一實施例所述，在上述光管結構的製造方法中，更可包括形成覆蓋光管層與介電層的頂面的封口層。封口層封住第一開口。According to an embodiment of the present invention, in the method for manufacturing a light pipe structure, it may further include forming a sealing layer covering a top surface of the light pipe layer and the dielectric layer. The sealing layer seals the first opening.
依照本發明的一實施例所述，在上述光管結構的製造方法中，更可包括在形成封口層之前，形成覆蓋光管層與介電層的頂面的支撐層。支撐層具有暴露出氣隙的多個第二開口。According to an embodiment of the present invention, in the manufacturing method of the light pipe structure described above, it may further include forming a supporting layer covering the top surfaces of the light pipe layer and the dielectric layer before forming the sealing layer. The support layer has a plurality of second openings exposing the air gap.
依照本發明的一實施例所述，在上述光管結構的製造方法中，支撐層的材料例如是光阻材料或硬罩幕材料。According to an embodiment of the present invention, in the manufacturing method of the light pipe structure, a material of the supporting layer is, for example, a photoresist material or a hard mask material.
依照本發明的一實施例所述，在上述光管結構的製造方法中，當支撐層的材料為光阻材料時，支撐層的形成方法例如是進行微影製程。According to an embodiment of the present invention, in the manufacturing method of the light pipe structure, when the material of the support layer is a photoresist material, the method for forming the support layer is, for example, a lithography process.
依照本發明的一實施例所述，在上述光管結構的製造方法中，當支撐層的材料為硬罩幕材料時，支撐層的形成方法例如是組合使用沉積製程、微影製程與蝕刻製程。According to an embodiment of the present invention, in the manufacturing method of the light pipe structure, when the material of the support layer is a hard mask material, the method of forming the support layer is, for example, a combination of a deposition process, a lithography process, and an etching process .
基於上述，在本發明所提出的光管結構、其製造方法及影像感測元件中，由於氣隙位於光管層與第一開口的側壁之間，所以可有效地提高光管結構所能夠產生全反射的臨界角度，因此能夠捕捉與聚集更大量的入射光，進而使得影像感測元件可具有較佳的感光度。Based on the above, in the light pipe structure, the manufacturing method and the image sensing element of the present invention, since the air gap is located between the light pipe layer and the side wall of the first opening, the light pipe structure can effectively improve The critical angle of total reflection can therefore capture and gather a larger amount of incident light, so that the image sensing element can have better sensitivity.
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.
圖1A至圖1E為本發明一實施例的影像感測元件的製造流程剖面圖。1A to 1E are cross-sectional views of a manufacturing process of an image sensing device according to an embodiment of the present invention.
首先，請參照圖1A，提供基底100。基底100的材料例如是矽等半導體材料。在基底100中可選擇性地包括感光元件102、隔離結構104與浮置擴散區106中的至少一者。感光元件102例如是光二極體。隔離結構104位於感光元件102的一側。隔離結構104例如是淺溝渠隔離結構。浮置擴散區106與感光元件102分離設置，且位於感光元件102的另一側。First, referring to FIG. 1A, a substrate 100 is provided. The material of the substrate 100 is, for example, a semiconductor material such as silicon. The substrate 100 may optionally include at least one of a photosensitive element 102, an isolation structure 104 and a floating diffusion region 106. The light receiving element 102 is, for example, a photodiode. The isolation structure 104 is located on one side of the photosensitive element 102. The isolation structure 104 is, for example, a shallow trench isolation structure. The floating diffusion region 106 is disposed separately from the photosensitive element 102 and is located on the other side of the photosensitive element 102.
接著，可於感光元件102與浮置擴散區106之間的基底100上形成轉移閘極結構108。轉移閘極結構108可與部分感光元件102重疊。轉移閘極結構108包括閘介電層110與設置於閘介電層110上的轉移閘極112。閘介電層110的材料例如是氧化矽。閘介電層110的形成方法例如是熱氧化法或化學氣相沉積法。轉移閘極112的材料例如是摻雜多晶矽。轉移閘極112的形成方法例如是化學氣相沉積法。在其他實施例中，更可選擇性地於轉移閘極112上形成金屬矽化物層。Next, a transfer gate structure 108 may be formed on the substrate 100 between the photosensitive element 102 and the floating diffusion region 106. The transfer gate structure 108 may overlap a portion of the photosensitive element 102. The transfer gate structure 108 includes a gate dielectric layer 110 and a transfer gate 112 disposed on the gate dielectric layer 110. The material of the gate dielectric layer 110 is, for example, silicon oxide. The method for forming the gate dielectric layer 110 is, for example, a thermal oxidation method or a chemical vapor deposition method. The material of the transfer gate 112 is, for example, doped polycrystalline silicon. A method for forming the transfer gate 112 is, for example, a chemical vapor deposition method. In other embodiments, a metal silicide layer may be selectively formed on the transfer gate 112.
然後，於基底100上形成介電層114。介電層114可為多層結構或單層結構。介電層114的材料例如是氧化矽。介電層114的形成方法例如是化學氣相沉積法。此外，在介電層114中可形成有內連線結構116。內連線結構116可電性連接至轉移閘極結構108。Then, a dielectric layer 114 is formed on the substrate 100. The dielectric layer 114 may be a multilayer structure or a single-layer structure. The material of the dielectric layer 114 is, for example, silicon oxide. A method of forming the dielectric layer 114 is, for example, a chemical vapor deposition method. In addition, an interconnect structure 116 may be formed in the dielectric layer 114. The interconnect structure 116 may be electrically connected to the transfer gate structure 108.
接下來，於介電層114中形成開口118。在此實施例中，開口118是以未完全貫穿介電層114為例來進行說明，但本發明並不以此為限。在另一實施例中，開口118亦可完全貫穿介電層114。開口118的形成方法例如是對介電層114進行圖案化製程。Next, an opening 118 is formed in the dielectric layer 114. In this embodiment, the opening 118 is described by taking the dielectric layer 114 not completely penetrated as an example, but the present invention is not limited thereto. In another embodiment, the opening 118 may also completely penetrate the dielectric layer 114. The method of forming the opening 118 is, for example, performing a patterning process on the dielectric layer 114.
之後，請參照圖1B，可於開口118中形成共形的保護層120。保護層120更可延伸至介電層114的頂面S上。保護層120可具有阻隔水氣的功能。保護層120的材料包括氮化矽。保護層120的形成方法例如是化學氣相沉積法，如電漿增強型化學氣相沉積法(PECVD)。Thereafter, referring to FIG. 1B, a conformal protective layer 120 may be formed in the opening 118. The protective layer 120 may further extend onto the top surface S of the dielectric layer 114. The protective layer 120 may have a function of blocking moisture. The material of the protective layer 120 includes silicon nitride. A method for forming the protective layer 120 is, for example, a chemical vapor deposition method, such as a plasma enhanced chemical vapor deposition method (PECVD).
再者，可於開口118中的保護層120上形成共形的犧牲層122。犧牲層122更可延伸至介電層114的頂面S上方。犧牲層122的材料例如是氧化矽、氮氧化矽、碳氧化矽、碳化矽、矽、低密度的氮化矽或低介電常數(low-k)材料(如，Black Diamond TM、SiLK TM、有機聚合物或多孔性材料)。犧牲層122的形成方法例如是化學氣相沉積法，如電漿增強型化學氣相沉積法(PECVD)。 Furthermore, a conformal sacrificial layer 122 may be formed on the protective layer 120 in the opening 118. The sacrificial layer 122 may further extend above the top surface S of the dielectric layer 114. The material of the sacrificial layer 122 is, for example, silicon oxide, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon, low-density silicon nitride, or low-k material (such as Black Diamond ™ , SiLK ™ , Organic polymers or porous materials). The method for forming the sacrificial layer 122 is, for example, a chemical vapor deposition method, such as a plasma enhanced chemical vapor deposition method (PECVD).
繼之，請參照圖1C，可對犧牲層122進行回蝕刻製程，而於開口118的側壁上形成犧牲襯層122a。回蝕刻製程例如是乾式蝕刻製程。Next, referring to FIG. 1C, the sacrificial layer 122 may be etched back to form a sacrificial liner 122 a on the sidewall of the opening 118. The etch-back process is, for example, a dry etching process.
隨後，可形成填滿開口118且覆蓋犧牲襯層122a的光管材料層124。光管材料層124的材料例如是聚合物，如光阻材料。當光管材料層124的材料為聚合物時，光管材料層124的形成方法例如是先以旋轉塗佈法形成填滿開口118的聚合物，再藉由烘烤等製程將聚合物硬化。Subsequently, a light pipe material layer 124 may be formed that fills the opening 118 and covers the sacrificial liner 122a. The material of the light pipe material layer 124 is, for example, a polymer, such as a photoresist material. When the material of the light pipe material layer 124 is a polymer, the method of forming the light pipe material layer 124 is, for example, first forming a polymer filling the opening 118 by a spin coating method, and then curing the polymer by a process such as baking.
接著，請參照圖1D，可移除開口118以外的光管材料層124，而於開口118中形成光管層124a，且暴露出犧牲襯層122a。開口118以外的光管材料層124的移除方法例如是化學機械研磨法。光管層124a的折射率例如是大於氣隙126的折射率。Next, referring to FIG. 1D, the light pipe material layer 124 other than the opening 118 may be removed, a light pipe layer 124 a is formed in the opening 118, and the sacrificial liner 122 a is exposed. The method of removing the light pipe material layer 124 other than the opening 118 is, for example, a chemical mechanical polishing method. The refractive index of the light pipe layer 124 a is, for example, larger than the refractive index of the air gap 126.
舉例來說，光管層124a的折射率可為1.1至3，較佳為1.6至1.9。氣隙126的折射率可為1(空氣折射率)。保護層120的折射率可為2.05(氮化矽折射率)。介電層114的折射率可為1.46(氧化矽折射率)。For example, the refractive index of the light pipe layer 124a may be 1.1 to 3, preferably 1.6 to 1.9. The refractive index of the air gap 126 may be 1 (refractive index of air). The refractive index of the protective layer 120 may be 2.05 (silicon nitride refractive index). The refractive index of the dielectric layer 114 may be 1.46 (silicon oxide refractive index).
然後，請參照圖1E，可移除犧牲襯層122a，而於光管層124a與開口118的側壁之間形成氣隙126。犧牲襯層122a的移除方法例如是濕式蝕刻法。舉例來說，可使用稀釋氫氟酸作為蝕刻劑，對犧牲襯層122a進行濕式蝕刻製程，而移除犧牲襯層122a。Then, referring to FIG. 1E, the sacrificial liner 122 a can be removed, and an air gap 126 is formed between the light pipe layer 124 a and the sidewall of the opening 118. The method of removing the sacrificial liner 122a is, for example, a wet etching method. For example, a dilute hydrofluoric acid can be used as an etchant to perform a wet etching process on the sacrificial liner 122a and remove the sacrificial liner 122a.
接下來，可形成覆蓋光管層124a與介電層114的頂面S的封口層128。封口層128封住開口118。封口層128的材料例如是氧化矽、氮氧化矽或氮化矽，其中氧化矽可為低溫氧化矽。Next, a sealing layer 128 covering the top surface S of the light pipe layer 124 a and the dielectric layer 114 may be formed. The sealing layer 128 seals the opening 118. The material of the sealing layer 128 is, for example, silicon oxide, silicon oxynitride, or silicon nitride, and the silicon oxide may be low-temperature silicon oxide.
之後，可於封口層128上形成彩色濾光層130。彩色濾光層130例如是紅色濾光層、綠色濾光層或藍色濾光層。彩色濾光層130的材料例如是光阻材料，而彩色濾光層130的形成方法可為所屬技術領域具有通常知識者所周知的旋轉塗佈、對準、曝光、顯影等，故於此不再贅述。After that, a color filter layer 130 can be formed on the sealing layer 128. The color filter layer 130 is, for example, a red filter layer, a green filter layer, or a blue filter layer. The material of the color filter layer 130 is, for example, a photoresist material, and the method for forming the color filter layer 130 may be spin coating, alignment, exposure, development, etc., which are well known to those having ordinary knowledge in the technical field. More details.
再者，可於彩色濾光層130上形成微透鏡132。微透鏡132的材料例如是光阻材料。微透鏡132的形成方法例如是先旋塗微透鏡材料層(未繪示)，再使用罩幕進行一個微影製程加上高溫熱烘烤成圓弧透鏡形，或其他所屬技術領域具有通常知識者所周知的旋轉塗佈、對準、曝光、顯影等，故於此不再贅述。Furthermore, a microlens 132 may be formed on the color filter layer 130. The material of the microlens 132 is, for example, a photoresist material. The method of forming the microlens 132 is, for example, first spin-coating a microlens material layer (not shown), and then performing a lithography process using a mask and adding high-temperature heat baking to form a circular lens shape, or other conventional technical fields have ordinary The spin coating, alignment, exposure, development, etc. which are well known by the knowledgeable person, will not be repeated here.
以下，藉由圖1E來說明上述實施例的影像感測元件10與光管結構12。Hereinafter, the image sensing element 10 and the light pipe structure 12 of the above embodiment will be described with reference to FIG. 1E.
請參照圖1E，影像感測元件10包括光管結構12與感光元件102，且更可包括隔離結構104、浮置擴散區106、轉移閘極結構108、內連線結構116、彩色濾光層130與微透鏡132中的至少一者。影像感測元件10例如是互補式金屬氧化物半導體影像感測器(CMOS Image Sensor，CIS)。Referring to FIG. 1E, the image sensing element 10 includes a light pipe structure 12 and a light sensing element 102, and may further include an isolation structure 104, a floating diffusion region 106, a transfer gate structure 108, an interconnect structure 116, and a color filter layer. At least one of 130 and microlens 132. The image sensing element 10 is, for example, a complementary metal oxide semiconductor image sensor (CMOS Image Sensor, CIS).
光管結構12包括介電層114、光管層124a與氣隙126，且更可選擇性地包括保護層120與封口層128中的至少一者。介電層114設置於基底100上，其中在介電層114中具有開口118。光管層124a設置於開口118中。氣隙126位於光管層124a與開口118的側壁之間。光管層124a的折射率例如是大於氣隙126的折射率。保護層120設置於氣隙126與介電層114之間。封口層128覆蓋光管層124a與介電層114的頂面S，且封住開口118。The light pipe structure 12 includes a dielectric layer 114, a light pipe layer 124a, and an air gap 126, and may further optionally include at least one of a protective layer 120 and a sealing layer 128. The dielectric layer 114 is disposed on the substrate 100, and has an opening 118 in the dielectric layer 114. The light pipe layer 124 a is disposed in the opening 118. The air gap 126 is located between the light pipe layer 124 a and the sidewall of the opening 118. The refractive index of the light pipe layer 124 a is, for example, larger than the refractive index of the air gap 126. The protective layer 120 is disposed between the air gap 126 and the dielectric layer 114. The sealing layer 128 covers the top surface S of the light pipe layer 124 a and the dielectric layer 114, and seals the opening 118.
感光元件102設置於光管結構12的基底100中，且位於光管結構12的光管層124a下方。隔離結構104位於感光元件102的一側的基底100中。浮置擴散區106與感光元件102分離設置，且位於感光元件102的另一側。轉移閘極結構108設置於感光元件102與浮置擴散區106之間的基底100上。轉移閘極結構108可與部分感光元件102重疊。轉移閘極結構108包括閘介電層110與設置於閘介電層110上的轉移閘極112。內連線結構116設置於介電層114中。內連線結構116可電性連接至轉移閘極結構108。彩色濾光層130設置於光管結構12的光管層124a上方的封口層128上。微透鏡132設置於彩色濾光層130上。The photosensitive element 102 is disposed in the substrate 100 of the light pipe structure 12 and is located below the light pipe layer 124 a of the light pipe structure 12. The isolation structure 104 is located in the substrate 100 on one side of the photosensitive element 102. The floating diffusion region 106 is disposed separately from the photosensitive element 102 and is located on the other side of the photosensitive element 102. The transfer gate structure 108 is disposed on the substrate 100 between the photosensitive element 102 and the floating diffusion region 106. The transfer gate structure 108 may overlap a portion of the photosensitive element 102. The transfer gate structure 108 includes a gate dielectric layer 110 and a transfer gate 112 disposed on the gate dielectric layer 110. The interconnect structure 116 is disposed in the dielectric layer 114. The interconnect structure 116 may be electrically connected to the transfer gate structure 108. The color filter layer 130 is disposed on the sealing layer 128 above the light pipe layer 124 a of the light pipe structure 12. The microlens 132 is disposed on the color filter layer 130.
此外，圖1E中的其他構件的配置方式、材料、形成方法與功效已於前文中進行詳盡地說明，因此不再重複說明。In addition, the configuration, materials, forming methods, and effects of other components in FIG. 1E have been described in detail in the foregoing, and therefore will not be repeated.
基於上述實施例可知，在光管結構12、其製造方法及影像感測元件10中，由於氣隙126位於光管層124a與開口118的側壁之間，所以可有效地提高光管結構12所能夠產生全反射的臨界角度(例如，當光管層124a的折射率爲1.6，空氣折射率爲1時，入射光與氣隙126間的最大夾角可達51.4度)，因此能夠捕捉與聚集更大量的入射光，進而使得影像感測元件10可具有較佳的感光度。Based on the above embodiments, it can be known that, in the light pipe structure 12, its manufacturing method, and the image sensing element 10, since the air gap 126 is located between the light pipe layer 124a and the side wall of the opening 118, the light pipe structure 12 can be effectively improved. The critical angle that can generate total reflection (for example, when the refractive index of the light pipe layer 124a is 1.6 and the refractive index of air is 1, the maximum angle between the incident light and the air gap 126 can reach 51.4 degrees), so it can capture and focus more A large amount of incident light enables the image sensing element 10 to have better sensitivity.
圖2A至圖2C為本發明另一實施例接續圖1D且沿著圖4A中的I-I’剖面線的影像感測元件的製造流程剖面圖。圖3A至圖3C為本發明另一實施例接續圖1D且沿著圖4A中的II-II’剖面線的影像感測元件的製造流程剖面圖。圖4A為圖2A與圖3A的上視圖。圖4B為圖2B與圖3B的上視圖。FIG. 2A to FIG. 2C are cross-sectional views of a manufacturing process of an image sensing element following FIG. 1D and taken along a line I-I 'in FIG. 4A according to another embodiment of the present invention. FIGS. 3A to 3C are cross-sectional views of a manufacturing process of an image sensing device following FIG. 1D and taken along a line II-II 'in FIG. 4A according to another embodiment of the present invention. FIG. 4A is a top view of FIG. 2A and FIG. 3A. FIG. 4B is a top view of FIG. 2B and FIG. 3B.
請參照圖2A、圖3A與圖4A，可形成覆蓋光管層124a與介電層114的頂面S的支撐層202，其中支撐層202具有暴露出犧牲襯層122a的開口204(圖3A)。支撐層202可用於支撐光管層124a，以防止光管層124a產生歪斜、變形或倒塌的情況。支撐層202的材料例如是光阻材料或硬罩幕材料，其中硬罩幕材料可為氮化矽。Referring to FIG. 2A, FIG. 3A and FIG. 4A, a supporting layer 202 covering the top surface S of the light pipe layer 124a and the dielectric layer 114 can be formed, wherein the supporting layer 202 has an opening 204 (FIG. 3A) exposing the sacrificial liner 122a. . The support layer 202 can be used to support the light pipe layer 124a to prevent the light pipe layer 124a from being distorted, deformed, or collapsed. The material of the support layer 202 is, for example, a photoresist material or a hard mask material, wherein the hard mask material may be silicon nitride.
此外，當支撐層202的材料為光阻材料時，支撐層202的形成方法例如是進行微影製程。In addition, when the material of the support layer 202 is a photoresist material, a method for forming the support layer 202 is, for example, a lithography process.
另外，當支撐層的材料為硬罩幕材料時，支撐層202的形成方法例如是組合使用沉積製程、微影製程與蝕刻製程，詳細說明如下。首先，於形成覆蓋光管層124a與介電層114的頂面S的硬罩幕材料層(未示出)。接著，於硬罩幕材料層上形成圖案化光阻層(未示出)。然後，以圖案化光阻層為罩幕，移除部分硬罩幕材料層。接下來，移除圖案化光阻層。在此實施例中，圖案化光阻層是以於形成支撐層202之後立即移除為例來進行說明，但本發明並不以此為限。在另一實施例中，亦可在圖2B中移除犧牲襯層122a的步驟之後，再移除圖案化光阻層。In addition, when the material of the support layer is a hard mask material, the method for forming the support layer 202 is, for example, a combination of a deposition process, a lithography process, and an etching process, which are described in detail below. First, a hard mask material layer (not shown) covering the top surface S of the light pipe layer 124a and the dielectric layer 114 is formed. Next, a patterned photoresist layer (not shown) is formed on the hard mask material layer. Then, using the patterned photoresist layer as a mask, a part of the hard mask material layer is removed. Next, the patterned photoresist layer is removed. In this embodiment, the patterned photoresist layer is described by taking the example of removing the support layer 202 immediately after the formation, but the invention is not limited thereto. In another embodiment, the patterned photoresist layer may be removed after the step of removing the sacrificial liner 122a in FIG. 2B.
接著，請參照圖2B、圖3B與圖4B，可移除犧牲襯層122a，而於光管層124a與開口118的側壁之間形成氣隙206。此時，支撐層202可具有暴露出氣隙206的開口204(請參照圖3B與圖4B)。犧牲襯層122a的移除方法例如是濕式蝕刻法。舉例來說，可使用稀釋氫氟酸作為蝕刻劑，對犧牲襯層122a進行濕式蝕刻製程，此時蝕刻劑會穿過支撐層202的開口204而移除犧牲襯層122a。2B, FIG. 3B and FIG. 4B, the sacrificial liner 122a can be removed, and an air gap 206 is formed between the light pipe layer 124a and the sidewall of the opening 118. At this time, the support layer 202 may have an opening 204 that exposes the air gap 206 (see FIGS. 3B and 4B). The method of removing the sacrificial liner 122a is, for example, a wet etching method. For example, a dilute hydrofluoric acid can be used as an etchant to perform a wet etching process on the sacrificial liner 122a. At this time, the etchant will pass through the opening 204 of the support layer 202 to remove the sacrificial liner 122a.
然後，請參照圖2C與圖3C，可依序於支撐層202上形成封口層128、彩色濾光層130與微透鏡132。圖2C與圖3C中的封口層128、彩色濾光層130與微透鏡132的材料、形成方法與功效與圖1E的內容相似且使用相同符號表示，因此不再重複說明。Then, referring to FIG. 2C and FIG. 3C, a sealing layer 128, a color filter layer 130, and a microlens 132 may be sequentially formed on the support layer 202. The materials, forming methods, and functions of the sealing layer 128, the color filter layer 130, and the microlens 132 in FIG. 2C and FIG. 3C are similar to those in FIG. 1E and are represented by the same symbols, and therefore will not be repeated.
以下，藉由圖2C與圖3C來說明上述實施例的影像感測元件20與光管結構22。Hereinafter, the image sensing element 20 and the light pipe structure 22 of the above embodiment will be described with reference to FIGS. 2C and 3C.
請參照圖1E、圖2C與圖3C，圖2C與圖3C的影像感測元件20與光管結構22相較於圖1E的影像感測元件10與光管結構12的差異如下。影像感測元件20與光管結構22更包括支撐層202。支撐層202設置封口層128與光管層124a之間以及封口層128與介電層114的頂面S之間，且具有暴露出氣隙206的多個開口204。圖2C與圖3C中的其他構件的配置方式、材料、形成方法與功效與圖1E的內容相似且使用相同符號表示，因此不再重複說明。Please refer to FIG. 1E, FIG. 2C and FIG. 3C. The differences between the image sensing element 20 and the light pipe structure 22 of FIG. 2C and FIG. 3C compared to the image sensing element 10 and the light pipe structure 12 of FIG. 1E are as follows. The image sensing element 20 and the light pipe structure 22 further include a support layer 202. The support layer 202 is provided between the sealing layer 128 and the light pipe layer 124 a and between the sealing layer 128 and the top surface S of the dielectric layer 114, and has a plurality of openings 204 that expose the air gap 206. The arrangement, materials, forming methods, and effects of the other components in FIG. 2C and FIG. 3C are similar to those in FIG. 1E and are represented by the same symbols, so the description is not repeated.
基於上述實施例可知，在光管結構22、其製造方法及影像感測元件20中，由於支撐層202可用於支撐光管層124a，以防止光管層124a產生歪斜、變形或倒塌的情況，進而可提高影像感測元件20與光管結構22的可靠度。Based on the above embodiments, it can be known that, in the light pipe structure 22, the manufacturing method thereof, and the image sensing element 20, the support layer 202 can be used to support the light pipe layer 124a to prevent the light pipe layer 124a from being skewed, deformed, or collapsed. Furthermore, the reliability of the image sensing element 20 and the light pipe structure 22 can be improved.
綜上所述，在上述實施例所提出的光管結構、其製造方法及影像感測元件中，可藉由氣隙有效地提高光管結構所能夠產生全反射的臨界角度，因此能夠捕捉與聚集更大量的入射光，進而使得影像感測元件可具有較佳的感光度。In summary, in the light pipe structure, the manufacturing method and the image sensing element proposed in the above embodiments, the critical angle that the light pipe structure can generate total reflection can be effectively improved by the air gap, so it can capture and A larger amount of incident light is collected, so that the image sensing element can have better sensitivity.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.
10、20‧‧影像感測元件10, 20‧‧Image sensor
12、22‧‧光管結構12, 22‧‧ light pipe structure
100‧‧基底100‧‧ substrate
102‧‧感光元件102‧‧photosensitive element
104‧‧‧隔離結構 104‧‧‧Isolated structure
106‧‧‧浮置擴散區 106‧‧‧Floating diffusion zone
108‧‧‧轉移閘極結構 108‧‧‧ transfer gate structure
110‧‧‧閘介電層 110‧‧‧ Gate dielectric layer
112‧‧‧轉移閘極 112‧‧‧transfer gate
114‧‧‧介電層 114‧‧‧ Dielectric layer
116‧‧‧內連線結構 116‧‧‧ Interconnection Structure
118、204‧‧‧開口 118, 204‧‧‧ opening
120‧‧‧保護層 120‧‧‧ protective layer
122‧‧‧犧牲層 122‧‧‧ sacrificial layer
122a‧‧‧犧牲襯層 122a‧‧‧ sacrificial liner
124‧‧‧光管材料層 124‧‧‧light pipe material layer
124a‧‧‧光管層 124a‧‧‧light pipe layer
126、206‧‧‧氣隙 126, 206‧‧‧ Air gap
128‧‧‧封口層 128‧‧‧Sealing layer
130‧‧‧彩色濾光層 130‧‧‧color filter
132‧‧‧微透鏡 132‧‧‧Micro lens
202‧‧‧支撐層 202‧‧‧Support layer
S‧‧‧頂面 S‧‧‧Top
圖1A至圖1E為本發明一實施例的影像感測元件的製造流程剖面圖。 圖2A至圖2C為本發明另一實施例接續圖1D且沿著圖4A中的I-I’剖面線的影像感測元件的製造流程剖面圖。 圖3A至圖3C為本發明另一實施例接續圖1D且沿著圖4A中的II-II’剖面線的影像感測元件的製造流程剖面圖。 圖4A為圖2A與圖3A的上視圖。 圖4B為圖2B與圖3B的上視圖。1A to 1E are cross-sectional views of a manufacturing process of an image sensing device according to an embodiment of the present invention. FIG. 2A to FIG. 2C are cross-sectional views of a manufacturing process of an image sensing element following FIG. 1D and taken along a line I-I 'in FIG. 4A according to another embodiment of the present invention. FIGS. 3A to 3C are cross-sectional views of a manufacturing process of an image sensing device following FIG. 1D and taken along a line II-II 'in FIG. 4A according to another embodiment of the present invention. FIG. 4A is a top view of FIG. 2A and FIG. 3A. FIG. 4B is a top view of FIG. 2B and FIG. 3B.
Claims (18)
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| TW106133080A TWI662319B (en) | 2017-09-27 | 2017-09-27 | Light pipe structure, manufacturing method tehreof and image sensing device |
| CN201710946233.4A CN109560092B (en) | 2017-09-27 | 2017-10-12 | Light pipe structure, manufacturing method thereof and image sensing element |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050040317A1 (en) * | 2003-08-21 | 2005-02-24 | Dun-Nian Yaung | Image sensor with guard rings and method for forming the same |
| CN101308860A (en) * | 2007-05-15 | 2008-11-19 | 索尼株式会社 | Solid-state image pickup device and a method of manufacturing the same, and image pickup apparatus |
| TW201208053A (en) * | 2010-08-09 | 2012-02-16 | Sony Corp | Solid-state imaging device, manufacturing method thereof, and electronic apparatus |
| TW201505165A (en) * | 2013-07-26 | 2015-02-01 | Toshiba Kk | Solid-state imaging device and method of manufacturing the same |
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| JP2007150087A (en) * | 2005-11-29 | 2007-06-14 | Fujifilm Corp | Solid-state imaging element and its manufacturing method |
| US20130293751A1 (en) * | 2012-05-03 | 2013-11-07 | Aptina Imaging Corporation | Imaging systems with separated color filter elements |
| US20140339606A1 (en) * | 2013-05-16 | 2014-11-20 | Visera Technologies Company Limited | Bsi cmos image sensor |
-
2017
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20050040317A1 (en) * | 2003-08-21 | 2005-02-24 | Dun-Nian Yaung | Image sensor with guard rings and method for forming the same |
| CN101308860A (en) * | 2007-05-15 | 2008-11-19 | 索尼株式会社 | Solid-state image pickup device and a method of manufacturing the same, and image pickup apparatus |
| TW201208053A (en) * | 2010-08-09 | 2012-02-16 | Sony Corp | Solid-state imaging device, manufacturing method thereof, and electronic apparatus |
| TW201505165A (en) * | 2013-07-26 | 2015-02-01 | Toshiba Kk | Solid-state imaging device and method of manufacturing the same |
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