TWI658349B - Process monitoring method and process monitoring system - Google Patents
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Abstract
一種製程監控方法,包括以下步驟:接收設定參數;於蝕刻時間中的偵測指定時間內接收製程參數;於偵測指定時間中每隔取樣時間內處理製程參數,在製程取樣範圍內以產生製程參數的特徵碼;判斷製程補償時間,依據製程參數的特徵碼,搜尋相似之設定參數,以決定蝕刻時間的製程補償時間;更新製程參數的特徵碼至資料庫參數。此外,一種製程監控系統亦被提出。 A process monitoring method includes the following steps: receiving set parameters; receiving process parameters within a specified time of detection during etching time; processing the process parameters every sampling time during the specified time of detection, and generating a process within a process sampling range Parameter feature code; judge the process compensation time, search for similar setting parameters according to the process parameter feature code to determine the process compensation time of the etching time; update the process parameter feature code to the database parameters. In addition, a process monitoring system has also been proposed.
Description
本發明是有關於一種製程監控方法與製程監控系統,且特別是有關於一種對基板蝕刻時間動態改善的製程監控方法與製程監控系統。 The invention relates to a process monitoring method and a process monitoring system, and in particular to a process monitoring method and a process monitoring system that dynamically improve substrate etching time.
半導體元件或液晶顯示裝置等電子裝置是以多個精密圖案集積而成,這種圖案是通過多個製程步驟而成,其中有一種蝕刻步驟。在微電子製程中主要有兩種蝕刻型態,一種為利用液體蝕刻劑之濕式蝕刻法,而另一種則為利用電漿之乾式蝕刻法。 An electronic device such as a semiconductor element or a liquid crystal display device is formed by integrating a plurality of precise patterns. This pattern is formed by a plurality of process steps, including an etching step. There are two main types of etching in the microelectronic process, one is a wet etching method using a liquid etchant, and the other is a dry etching method using a plasma.
就濕式蝕刻法來說,濕蝕刻能力的控制影響產品品質與元件效能甚巨。習知濕蝕刻的方法在設定在一固定蝕刻時間內藉由控制液體濃度來加速或減低來達到所欲蝕刻膜厚,然而蝕刻速率會因為液體濃度與反應的溫度隨時間變化而改變,使得蝕刻製程顯得難以控制。因此,如何提供一種「製程監控方法與系統」來解決上述問題,是相關技術領域亟需解決的課題。 As far as the wet etching method is concerned, the control of the wet etching ability greatly affects the product quality and component performance. The conventional wet etching method is to set a fixed etching time by controlling the liquid concentration to accelerate or reduce to achieve the desired etching film thickness. However, the etching rate will change because the liquid concentration and the reaction temperature change with time, making the etching The process seems difficult to control. Therefore, how to provide a "process monitoring method and system" to solve the above-mentioned problems is a subject that needs to be solved in the related technical field.
本發明的一目的在於,能對基板蝕刻時間進行動態改善,以實現蝕刻之最佳化。 An object of the present invention is to dynamically improve the etching time of a substrate to optimize the etching.
本發明另一目的在於,濾除光感測元件因汙染、濕氣、反射等因素所偵測到的雜訊,以提升收取資料的品質,降低後續計算上的判斷失誤機率。 Another object of the present invention is to filter out the noise detected by the light sensing element due to pollution, moisture, reflection and other factors, so as to improve the quality of the received data and reduce the probability of judgment errors in subsequent calculations.
本發明另一目的在於,透過同步過程,降低因光感測元件通訊時間上的落差,也可避免造成量測同一時間點資料的時間誤差,更可降低後續計算上的錯誤率。 Another object of the present invention is to reduce the time difference due to the communication time of the light sensing element through the synchronization process, avoid time errors caused by measuring data at the same time point, and reduce the error rate in subsequent calculations.
本發明的一實施例提出一種製程監控方法,包括以下步驟:接收一設定參數,其中設定參數包括一配方參數與一資料庫參數,配方參數包含一蝕刻時間;於蝕刻時間中的一偵測指定時間內接收一製程參數,其中製程參數係產生自光感測元件;於偵測指定時間中每隔一取樣時間內處理製程參數,在一製程取樣範圍內以產生相應之製程參數的特徵碼;判斷製程補償時間,依據製程參數的特徵碼,搜尋相似之設定參數,以決定蝕刻時間的一製程補償時間;更新製程參數的特徵碼至資料庫參數。 An embodiment of the present invention provides a process monitoring method including the following steps: receiving a setting parameter, wherein the setting parameter includes a recipe parameter and a database parameter, the recipe parameter includes an etching time; a detection specification in the etching time Receive a process parameter within time, wherein the process parameter is generated from the light sensing element; process the process parameter every other sampling time during the detection specified time, and generate a corresponding process parameter characteristic code within a process sampling range; Determine the process compensation time, and search for similar setting parameters according to the feature code of the process parameter to determine a process compensation time for the etching time; update the feature code of the process parameter to the database parameter.
本發明的一實施例提出一種製程監控系統,包括一資料處理單元、一製程單元以及一PLC控制單元。資料處理單元用以接收一設定參數,設定參數包括一配方參數與一資料庫參數,配方參數包括一蝕刻時間。製程單元用以傳輸一製程參數。PLC控制單元訊號連接製程單元與資料處理單元,PLC控制單元接收製程參數,且PLC控制單元傳輸製程參數至資料處理單元,其中在蝕刻時間中的一偵測指定時間內,資料處理單元處理製程參數以產生相應之製程參數的特徵碼,資料處理單元依據製程參數的特徵 碼,搜尋相似之設定參數,以決定蝕刻時間的製程補償時間指令,資料處理單元傳輸製程補償時間指令至PLC控制單元,且PLC控制單元控制製程單元之製程補償時間。 An embodiment of the present invention provides a process monitoring system, which includes a data processing unit, a process unit, and a PLC control unit. The data processing unit is used for receiving a setting parameter, the setting parameter includes a recipe parameter and a database parameter, and the recipe parameter includes an etching time. The process unit is used to transmit a process parameter. The PLC control unit signal connects the process unit and the data processing unit. The PLC control unit receives the process parameters, and the PLC control unit transmits the process parameters to the data processing unit. Among them, the data processing unit processes the process parameters within a specified time of detection in the etching time In order to generate the characteristic code of the corresponding process parameter, the data processing unit is based on the characteristic of the process parameter Code, search for similar setting parameters to determine the process compensation time instruction of the etching time, the data processing unit transmits the process compensation time instruction to the PLC control unit, and the PLC control unit controls the process compensation time of the process unit.
基於上述,在本發明的製程監控方法與製程監控系統,在蝕刻時間中的偵測指定時間內分析處理所偵測的製程參數,來決定是否要對蝕刻時間進行製程補償時間,對基板蝕刻時間進行動態改善。 Based on the above, in the process monitoring method and the process monitoring system of the present invention, the detected process parameters are analyzed and processed within a specified time of the detection time in the etching time to determine whether to perform a process compensation time on the etching time and a substrate etching time. Make dynamic improvements.
100‧‧‧製程監控系統 100‧‧‧process monitoring system
110‧‧‧製程單元 110‧‧‧Processing unit
112‧‧‧光感測元件 112‧‧‧light sensor
120‧‧‧PLC控制單元 120‧‧‧PLC Control Unit
130‧‧‧資料處理單元 130‧‧‧Data Processing Unit
132‧‧‧資料收集模組 132‧‧‧Data Collection Module
134‧‧‧雜訊濾波模組 134‧‧‧Noise Filter Module
136‧‧‧判斷演算模組 136‧‧‧ Judgment Calculus Module
138‧‧‧信號控制模組 138‧‧‧Signal Control Module
140‧‧‧人機介面單元 140‧‧‧ human-machine interface unit
150‧‧‧資料庫單元 150‧‧‧Database Unit
S100‧‧‧製程監控方法 S100‧‧‧Process Monitoring Method
S110~S150‧‧‧步驟 S110 ~ S150‧‧‧step
S112~S116‧‧‧步驟 S112 ~ S116‧‧‧step
S1142~S1148‧‧‧步驟 S1142 ~ S1148‧‧‧step
S122~S126‧‧‧步驟 S122 ~ S126‧‧‧step
S1262~S1266‧‧‧步驟 S1262 ~ S1266‧‧‧step
S131~S137‧‧‧步驟 S131 ~ S137‧‧‧ steps
S141~S145‧‧‧步驟 S141 ~ S145‧‧‧step
圖1為本發明的製程監控系統的示意圖。 FIG. 1 is a schematic diagram of a process monitoring system of the present invention.
圖2為本發明的製程監控方法的流程圖。 FIG. 2 is a flowchart of a process monitoring method according to the present invention.
圖3為圖2中接收設定參數的流程圖。 FIG. 3 is a flowchart of receiving setting parameters in FIG. 2.
圖4為圖3中處理配方參數的流程圖。 FIG. 4 is a flowchart of processing recipe parameters in FIG. 3.
圖5為圖2中於蝕刻時間中的偵測指定時間內接收製程參數的流程圖。 FIG. 5 is a flowchart of receiving process parameters in a specified time during the etching time detection in FIG. 2.
圖6為圖5中接收透光率數值的流程圖。 FIG. 6 is a flowchart of receiving a transmittance value in FIG. 5.
圖7為圖2中處理製程參數的流程圖。 FIG. 7 is a flowchart of processing process parameters in FIG. 2.
圖8為圖2中判斷製程補償時間的流程圖。 FIG. 8 is a flowchart of determining a process compensation time in FIG. 2.
以下結合附圖和實施例,對本發明的具體實施方式作進一步描述。以下實施例僅用於更加清楚地說明本發明的技術方案,而不能以此限制本發明的保護範圍。 The specific embodiments of the present invention will be further described below with reference to the accompanying drawings and embodiments. The following embodiments are only used to more clearly illustrate the technical solution of the present invention, but cannot limit the protection scope of the present invention.
圖1為本發明的製程監控系統的示意圖。請參考圖1。本實施例的製程監控系統100例如為一監控蝕刻製程之系統。製程監控系統100包括一製程單元110、一PLC控制單元120、一資料處理單元130、一人機介面單元140以及一資料庫單元150。 FIG. 1 is a schematic diagram of a process monitoring system of the present invention. Please refer to Figure 1. The process monitoring system 100 of this embodiment is, for example, a system for monitoring an etching process. The process monitoring system 100 includes a process unit 110, a PLC control unit 120, a data processing unit 130, a human-machine interface unit 140, and a database unit 150.
製程單元110用以製程基板,製程單元110例如為一蝕刻機,以蝕刻基板。製程單元110用以傳輸一製程參數,本實施例的製程單元110內包含複數個光感測元件112,製程參數係產生自光感測元件112,光感測元件112用以偵測基板的透光率,以獲得透光率數值,透過透光率數值可分析計算相應的製程參數,光感測元件112用以傳輸製程參數至PLC控制單元120,本實施例的光感測元件112的數量例如為三個,其端視實際製程所需(如基板的尺寸)而可擇定光感測件元件的數量與型態。 The process unit 110 is used to process a substrate. The process unit 110 is, for example, an etching machine to etch the substrate. The process unit 110 is used to transmit a process parameter. The process unit 110 of this embodiment includes a plurality of light sensing elements 112. The process parameters are generated from the light sensing element 112, and the light sensing element 112 is used to detect the transmission of the substrate. Light transmittance to obtain the light transmittance value, and the corresponding process parameters can be analyzed and calculated through the light transmittance value. The light sensing element 112 is used to transmit the process parameters to the PLC control unit 120. The number of light sensing elements 112 in this embodiment For example, there are three, and the number and type of the light sensor components can be selected depending on the actual manufacturing process (such as the size of the substrate).
PLC控制單元120為一可程式(Programmable Logic Controller)控制器,PLC控制單元120訊號連接製程單元110,PLC控制單元120接收自光感測元件112傳輸的製程參數,PLC控制單元120傳輸製程參數至資料處理單元130。 The PLC control unit 120 is a programmable logic controller. The PLC control unit 120 signals are connected to the process unit 110. The PLC control unit 120 receives the process parameters transmitted from the light sensing element 112. The PLC control unit 120 transmits the process parameters to Data processing unit 130.
人機介面單元140訊號連接資料處理單元130,人機介面單元140用以顯示使用者介面,並供使用者輸入所需配方參數至資料處理單元130。配方參數例如為蝕刻藥水、壓力、設定溫度、基板厚度、傳送速度、蝕刻時間、偵測指定時間、取樣時間等參數,其中蝕刻時間包含一連續之一第一時間區間與一第二時間區間,取樣時間與偵測指定時間係界定在第二時間區間,可端視實際機台與製程所需來調整配方參數的項目。資料庫單元150訊號連接資料處理單元130,資料庫單元150用以儲存並提取資料庫 參數至資料處理單元130。 The signal from the human-machine interface unit 140 is connected to the data processing unit 130. The human-machine interface unit 140 is used to display the user interface and allow the user to input the required recipe parameters to the data processing unit 130. The recipe parameters are, for example, etching solution, pressure, set temperature, substrate thickness, transfer speed, etching time, detection specified time, sampling time and other parameters. The etching time includes a continuous first time interval and a second time interval. Sampling time and detection specified time are defined in the second time interval, and the parameters of the recipe parameters can be adjusted depending on the actual machine and process requirements. The data of the database unit 150 is connected to the data processing unit 130, and the database unit 150 is used for storing and retrieving the database Parameters to the data processing unit 130.
資料處理單元130用以接收一設定參數,設定參數包括一配方參數與一資料庫參數,其中配方參數係接收自人機介面單元140,資料庫參數係接收自資料庫單元150。 The data processing unit 130 is configured to receive a setting parameter. The setting parameter includes a recipe parameter and a database parameter. The recipe parameter is received from the human-machine interface unit 140 and the database parameter is received from the database unit 150.
詳細而言,資料處理單元130包括一資料收集模組132、一雜訊濾波模組134、一判斷演算模組136以及一信號控制模組138,資料收集模組132訊號連接雜訊濾波模組134,雜訊濾波模組134訊號連接判斷演算模組136,判斷演算模組136訊號連接信號控制模組138。 In detail, the data processing unit 130 includes a data collection module 132, a noise filter module 134, a judgment calculation module 136, and a signal control module 138. The signal of the data collection module 132 is connected to the noise filter module. 134. The signal of the noise filtering module 134 is connected to the judgment calculation module 136, and the signal of the judgment calculation module 136 is connected to the signal control module 138.
資料收集模組132訊號連接PLC控制單元120,在蝕刻時間中的一偵測指定時間內,資料收集模組132用以接收自PLC控制單元120所傳輸的製程參數。雜訊濾波模組134依據製程參數與資料庫參數以產生一最終訊號曲線,判斷演算模組136依據最終訊號曲線與資料庫參數以產生相對應的製程參數的特徵碼,依據製程參數的特徵碼,搜尋資料庫單元150中相似之設定參數,搜尋到相似的設定參數後可由資料庫單元150提取相對應的特徵碼,所述相對應的特徵碼係有對應之蝕刻延長時間,藉此決定製程補償時間。 The signal of the data collection module 132 is connected to the PLC control unit 120. The data collection module 132 is used to receive the process parameters transmitted from the PLC control unit 120 within a specified period of time in the etching time. The noise filtering module 134 generates a final signal curve according to the process parameters and the database parameters, and the judgment calculation module 136 generates a corresponding code of the process parameters based on the final signal curve and the database parameters, and according to the feature codes of the process parameters After searching for similar setting parameters in the database unit 150, after searching for similar setting parameters, the database unit 150 can extract the corresponding feature code, and the corresponding feature code has a corresponding etching extension time, thereby determining the manufacturing process. Compensation time.
若達蝕刻時間內的偵測指定時間,判斷演算模組136將演算後的製程補償時間指令傳輸至信號控制模組138,信號控制模組138用以更新製程參數的特徵碼至資料庫單元150中的資料庫參數,且信號控制模組138用以傳輸製程補償時間指令至PLC控制單元120,PLC控制單元120用以控制製程單元110,使該製程單元110延長該所需補償時間。 If the detection time specified in the etching time is reached, the judgment calculation module 136 transmits the calculated process compensation time instruction to the signal control module 138, and the signal control module 138 updates the feature code of the process parameter to the database unit 150. Database parameters, and the signal control module 138 is used to transmit the process compensation time instruction to the PLC control unit 120, and the PLC control unit 120 is used to control the process unit 110, so that the process unit 110 extends the required compensation time.
舉例而言,在蝕刻時間內製程單元110製程基板,蝕刻時間 例如設定在120秒,其中第一時間區間為40秒,第二時間區間為80秒,在第一時間區間內製程基板後,在第二時間區間內指定偵測指定時間為77秒。據此,製程單元製程基板經過40秒後,在77秒之前,光感測元件112偵測基板的透光率,並傳輸製程參數至PLC控制單元120。PLC控制單元120傳輸製程參數至資料處理單元130。 For example, the process unit 110 processes the substrate in the etching time, and the etching time For example, it is set to 120 seconds, wherein the first time interval is 40 seconds and the second time interval is 80 seconds. After the substrate is processed in the first time interval, the designated detection and specified time is 77 seconds in the second time interval. According to this, after 40 seconds have elapsed on the substrate of the process unit, before 77 seconds, the light sensing element 112 detects the transmittance of the substrate and transmits the process parameters to the PLC control unit 120. The PLC control unit 120 transmits the process parameters to the data processing unit 130.
若達偵測指定時間的77秒,資料處理單元130中的判斷演算模組136處理製程參數來決定製程補償時間,資料處理單元130中信號控制模組138用以傳輸製程補償時間至PLC控制單元120,透過PLC控制單元120控制製程單元110之製程補償時間,以回授製程單元110所需補償時間,使得在120秒的蝕刻時間之內,能在77秒的偵測指定時間內接收並補償後續所需蝕刻補償時間,以對基板蝕刻時間進行動態改善。此外,信號控制模組138更新製程參數的特徵碼至資料庫單元150中的資料庫參數。 If the detection time reaches 77 seconds, the judgment calculation module 136 in the data processing unit 130 processes the process parameters to determine the process compensation time. The signal control module 138 in the data processing unit 130 is used to transmit the process compensation time to the PLC control unit. 120. The process compensation time of the process unit 110 is controlled by the PLC control unit 120. The compensation time required by the process unit 110 is feedbacked, so that within 120 seconds of the etching time, it can be received and compensated within 77 seconds of the specified detection time. Subsequent required etching compensation time to dynamically improve substrate etching time. In addition, the signal control module 138 updates the feature code of the process parameter to the database parameter in the database unit 150.
圖2為本發明的製程監控方法的流程圖。圖3為圖2中接收設定參數的流程圖。圖4為圖3中處理配方參數的流程圖。圖5為圖2中於蝕刻時間中的偵測指定時間內接收製程參數的流程圖。圖6為圖5中接收透光率數值的流程圖。圖7為圖2中處理製程參數的流程圖。圖8為圖2中判斷製程補償時間的流程圖。本實施例的製程監控方法S100係可用於如圖1所示製程監控系統100。製程監控方法S100包括以下步驟S110~S150。 FIG. 2 is a flowchart of a process monitoring method according to the present invention. FIG. 3 is a flowchart of receiving setting parameters in FIG. 2. FIG. 4 is a flowchart of processing recipe parameters in FIG. 3. FIG. 5 is a flowchart of receiving process parameters in a specified time during the etching time detection in FIG. 2. FIG. 6 is a flowchart of receiving a transmittance value in FIG. 5. FIG. 7 is a flowchart of processing process parameters in FIG. 2. FIG. 8 is a flowchart of determining a process compensation time in FIG. 2. The process monitoring method S100 of this embodiment can be used in the process monitoring system 100 shown in FIG. 1. The process monitoring method S100 includes the following steps S110 to S150.
請先參閱圖2,首先,進行步驟S110,接收一設定參數。以圖1而言,資料處理單元130用以接收設定參數。步驟S110可包括以下步驟S112~步驟S116,請參閱圖3,進行步驟S112,接收配方參數。以圖1而言,配方參數係資料處理單元130中的資料收集模組132接收自人機介面單元 140,例如為蝕刻藥水、壓力、設定溫度、基板厚度、傳送速度、蝕刻時間、偵測指定時間、取樣時間等參數,其中蝕刻時間包含一連續之一第一時間區間與一第二時間區間,取樣時間與偵測指定時間係界定在蝕刻時間中的第二時間區間,可端視實際機台與製程所需來調整配方參數的項目。 Please refer to FIG. 2 first. First, step S110 is performed to receive a setting parameter. As shown in FIG. 1, the data processing unit 130 is configured to receive setting parameters. Step S110 may include the following steps S112 to S116. Referring to FIG. 3, step S112 is performed to receive recipe parameters. According to FIG. 1, the recipe parameters are received by the data collection module 132 in the data processing unit 130 from the human-machine interface unit. 140, for example, etching parameters, pressure, set temperature, substrate thickness, transfer speed, etching time, detection specified time, sampling time and other parameters, wherein the etching time includes a continuous first time interval and a second time interval, The sampling time and the detection specified time are the second time interval defined in the etching time, and the items for adjusting the recipe parameters can be adjusted according to the actual machine and process requirements.
接著,進行步驟S114,處理配方參數,以產生相應之一基準特徵曲線,詳細而言,請參閱圖4,步驟S114包括以下步驟S1142~步驟S1148,進行步驟S1142,將配方參數轉換成相應的配方特徵碼,以圖1而言,資料收集模組132傳輸配方參數至雜訊濾波模組134,雜訊濾波模組134依據配方參數轉換成相應的配方特徵碼。接著,進行步驟S1144,依據配方特徵碼,搜尋資料庫參數中相應的特徵碼,以圖1而言,雜訊濾波模組134依據配方特徵碼,搜尋資料庫單元150中資料庫參數是否有相應的特徵碼。 Next, step S114 is performed to process the recipe parameters to generate a corresponding one of the reference characteristic curves. For details, please refer to FIG. 4. Step S114 includes the following steps S1142 to S1148, and step S1142 is performed to convert the recipe parameters into corresponding recipes. For the feature code, as shown in FIG. 1, the data collection module 132 transmits the recipe parameters to the noise filtering module 134, and the noise filtering module 134 converts the corresponding formula feature codes according to the recipe parameters. Then, step S1144 is performed, and the corresponding feature code in the database parameter is searched according to the formula feature code. In the case of FIG. 1, the noise filtering module 134 searches for the database parameter in the database unit 150 according to the formula feature code. Feature code.
接著,進行步驟S1146,若無資料庫參數中相應的特徵碼,將配方特徵碼更新至資料庫參數,以圖1而言,此時若資料庫單元150並無相應的特徵碼,這個配方特徵碼可能為最新製程,故雜訊濾波模組134便能將此配方特徵碼更新至資料庫單元150。反之,進行步驟S1148,若有資料庫參數中相應的特徵碼,依據資料庫參數中相應的特徵碼,以取得相對應的基準特徵曲線。因此,雜訊濾波模組134若搜尋到資料庫單元150中符合配方特徵碼相應的特徵碼,便能取得相對應的基準特徵曲線。 Next, step S1146 is performed. If there is no corresponding feature code in the database parameters, the formula feature code is updated to the database parameters. In the case of FIG. 1, if the database unit 150 does not have a corresponding feature code, this formula feature The code may be the latest process, so the noise filtering module 134 can update the formula feature code to the database unit 150. Otherwise, step S1148 is performed. If there is a corresponding feature code in the database parameter, a corresponding reference feature curve is obtained according to the corresponding feature code in the database parameter. Therefore, if the noise filtering module 134 searches for the feature code corresponding to the formula feature code in the database unit 150, it can obtain the corresponding reference feature curve.
經由上述步驟S1142~步驟S1148取得基準特徵曲線後,請復參閱圖3,接著進行步驟S116,界定製程取樣範圍,其中每隔取樣時間內在基準特徵曲線上界定製程取樣範圍。舉例而言,取樣時間例如為0.5秒,故每隔0.5秒,在基準特徵曲線上界定出所需的製程取樣範圍。 After obtaining the reference characteristic curve through the above steps S1142 to S1148, please refer to FIG. 3, and then proceed to step S116 to define a custom range sampling range, wherein the custom range sampling range is defined at the upper limit of the reference characteristic curve every sampling time. For example, the sampling time is 0.5 seconds, so every 0.5 seconds, the required process sampling range is defined on the reference characteristic curve.
請復參閱圖2,接著進行步驟S120,於蝕刻時間中的一偵測指定時間內接收一製程參數,其中製程參數係產生自光感測元件。詳細而言,請參閱圖5,步驟S120包括以下步驟S122~步驟S126,進行步驟S122,依據配方參數,於第二時間區間製程基板,其中設定參數包含一已製程參數,已製程參數係產生在第一時間區間內,以圖1而言,製程單元110在第一時間區間內製程基板後,產生已製程參數,PLC控制單元120能接收自製程單元110傳輸的已製程參數,資料收集模組132能接收自PLC控制單元120傳輸的已製程參數,資料收集模組132將已製程參數傳輸至雜訊濾波模組134,雜訊濾波模組134依據已製程參數轉換成相應的已製程特徵碼,依據已製程特徵碼,搜尋資料庫單元150中相似的特徵碼。 Please refer to FIG. 2, and then proceed to step S120 to receive a process parameter within a specified time of detection in the etching time, wherein the process parameter is generated from the light sensing element. For details, please refer to FIG. 5. Step S120 includes the following steps S122 to S126, and step S122 is performed to process the substrate in the second time interval according to the recipe parameters. The set parameter includes a process parameter. The process parameter is generated in In the first time interval, as shown in FIG. 1, after the process unit 110 processes the substrate in the first time interval, the process parameters are generated. The PLC control unit 120 can receive the process parameters transmitted by the self-made process unit 110. The data collection module 132 can receive the process parameters transmitted from the PLC control unit 120, the data collection module 132 transmits the process parameters to the noise filter module 134, and the noise filter module 134 converts into the corresponding process feature code according to the process parameters Based on the process feature code, search for similar feature codes in the database unit 150.
接著進行步驟S124,偵測基板的透光率以獲得透光率數值。以圖1而言,製程單元110繼續在第二時間區間內製程基板,於此同時,製程單元110中的光感測元件112於偵測指定時間內偵測基板的透光率以獲得透光率數值,藉由透光率數值可以分析計算基板被蝕刻的膜厚程度。 Then step S124 is performed to detect the transmittance of the substrate to obtain a transmittance value. As shown in FIG. 1, the processing unit 110 continues to process the substrate in the second time interval. At the same time, the light sensing element 112 in the processing unit 110 detects the light transmittance of the substrate within a specified time to obtain light transmission. The numerical value of the transmittance can be analyzed to calculate the degree of film thickness of the substrate being etched by the transmittance value.
接著,進行步驟S126,接收透光率數值,以獲得製程參數。詳細而言,請參閱圖6,步驟S126包括以下步驟S1262~步驟S1266,進行步驟S1262,設定複數個接收區間。接著,進行步驟S1264,接收複數個光感測元件所傳輸的透光率數值,以圖1而言,光感測元件112的數量例如為3個,這三個光感測元件112分別傳輸透光率數值至PLC控制單元120,資料收集模組132接收三個光感測元件112相對應的透光率數值並存取。 Next, step S126 is performed to receive a transmittance value to obtain a process parameter. For details, referring to FIG. 6, step S126 includes the following steps S1262 to S1266, and step S1262 is performed to set a plurality of receiving intervals. Next, step S1264 is performed to receive the transmittance values transmitted by the plurality of light sensing elements. In terms of FIG. 1, for example, the number of the light sensing elements 112 is three, and the three light sensing elements 112 respectively transmit the light transmittance. The light transmittance value is sent to the PLC control unit 120, and the data collection module 132 receives the light transmittance values corresponding to the three light sensing elements 112 and stores them.
接著,進行步驟S1266,將符合各接收區間的透光率數值結合成相對應的製程參數。舉例而言,由於每個光感測元件112傳輸的時間不 盡相同,進而使資料收集模組132接收相對應的透光率數值時間也不盡相同,因此,透過步驟S1262至步驟S1266將一接收區間內的透光率數值結合成相對應的製程參數,如此可以使得三個光感測元件112的製程參數同步發送至雜訊濾波模組134,藉此降低因光感測元件112通訊時間上的落差,也可避免造成量測同一時間點資料的時間誤差,更可降低後續分析計算上的錯誤率。 Next, step S1266 is performed to combine the light transmittance values corresponding to each receiving interval into corresponding process parameters. For example, since the transmission time of each light sensing element 112 is different It is the same, so that the data collection module 132 receives the corresponding light transmittance value time. Therefore, the light transmittance values in a receiving interval are combined into corresponding process parameters through steps S1262 to S1266. In this way, the process parameters of the three light sensing elements 112 can be sent to the noise filtering module 134 synchronously, thereby reducing the gap in communication time due to the light sensing elements 112, and avoiding the time for measuring data at the same time point. The error can further reduce the error rate in subsequent analysis and calculation.
在上述步驟S120接收製程參數後,請復參閱圖2,接著進行步驟S130,於偵測指定時間中每隔取樣時間內處理製程參數,在製程取樣範圍內以產生相應之製程參數的特徵碼。詳細而言,請參閱圖7,步驟S130包括以下步驟S131~步驟S137,進行步驟S131,於每隔取樣時間內接收製程參數,以圖1而言,取樣時間例如為0.5秒,故每隔0.5秒雜訊濾波模組134接收自資料收集模組132傳輸的製程參數。 After receiving the process parameters in the above step S120, please refer to FIG. 2 again, and then proceed to step S130, process the process parameters every sampling time during the detection specified time, and generate the corresponding process parameter characteristic code within the process sampling range. For details, please refer to FIG. 7. Step S130 includes the following steps S131 to S137, and step S131 is performed to receive the process parameters at every sampling time. For FIG. 1, the sampling time is 0.5 seconds, so every 0.5 The second noise filtering module 134 receives the process parameters transmitted from the data collection module 132.
接著,進行步驟S132,產生一製程特徵碼,其中製程特徵碼係產生自製程參數。以圖1而言,雜訊濾波模組134將製程參數轉換成相對應的製程特徵碼,製程特徵碼例如有多項式函數值、斜率、總積分或差值並具有相對應的權重值,製程特徵碼可依據實際應用與演算需求而可定,本實施例不對此加以限制。 Next, step S132 is performed to generate a process feature code, where the process feature code generates a self-made process parameter. In terms of FIG. 1, the noise filtering module 134 converts process parameters into corresponding process feature codes. The process feature codes have, for example, polynomial function values, slopes, total integrals, or differences and have corresponding weight values. The code may be determined according to actual application and calculation requirements, and this embodiment does not limit this.
接著,進行步驟S133,依據製程特徵碼,搜尋資料庫參數中相似之一特徵碼。以圖1而言,雜訊濾波模組134依據製程參數轉換的製程特徵碼,搜尋資料庫單元150的資料庫參數中是否有相似的特徵碼。接著,若無資料庫參數中相應的特徵碼,進行步驟S134,將製程特徵碼更新至資料庫參數。反之,若有資料庫參數中相應的特徵碼,進行步驟S135, 產生複數個分類訊號曲線。 Next, step S133 is performed to search for a similar feature code in the database parameters according to the process feature code. As shown in FIG. 1, the noise filtering module 134 searches the database parameters of the database unit 150 for similar feature codes according to the process feature codes converted by the process parameters. Next, if there is no corresponding feature code in the database parameter, step S134 is performed to update the process feature code to the database parameter. Conversely, if there is a corresponding feature code in the database parameters, step S135 is performed. Generate a plurality of classification signal curves.
以圖1而言,若資料庫單元150內資料庫參數並無相應的特徵碼,將製程特徵碼更新至資料庫單元150內資料庫參數,反之,若資料庫單元150內資料庫參數有相應的特徵碼,依據特徵碼可產生分類訊號曲線,分類訊號曲線的數量可依據實際資料收取而決定。 In terms of FIG. 1, if the database parameter in the database unit 150 does not have a corresponding feature code, the process feature code is updated to the database parameter in the database unit 150. Conversely, if the database parameter in the database unit 150 has a corresponding According to the feature code, a classification signal curve can be generated, and the number of classification signal curves can be determined according to the actual data collection.
接著進行步驟S136,獲得一最終訊號曲線,最終訊號曲線係平均自符合製程取樣範圍內的複數個分類訊號曲線。以圖1而言,雜訊濾波模組134依據前述步驟S116所界定製程取樣範圍,擷取符合在製程取樣範圍內的分類訊號曲線,此舉可類似於濾波過程,以濾除光感測元件112因汙染、濕氣、反射等因素所偵測到的雜訊,以提升收取資料的品質,降低後續分析計算上的判斷失誤機率。擷取符合在製程取樣範圍內的分類訊號曲線後,平均這些分類訊號曲線以獲得最終訊號曲線。 Then step S136 is performed to obtain a final signal curve. The final signal curve is an average of a plurality of classified signal curves within the sampling range of the process. In terms of FIG. 1, the noise filtering module 134 extracts a classification signal curve that conforms to the sampling range of the process according to the customized range defined in step S116. This can be similar to the filtering process to filter out the light sensing element. 112 Noise detected due to pollution, moisture, reflection and other factors to improve the quality of received data and reduce the probability of judgment errors in subsequent analysis and calculation. After capturing the classification signal curves within the sampling range of the process, average these classification signal curves to obtain the final signal curve.
接著進行步驟S137,產生製程參數的特徵碼,其中製程參數的特徵碼係產生自最終訊號曲線。以圖1而言,雜訊濾波模組134將最終訊號曲線轉換成相對應的製程參數的特徵碼,雜訊濾波模組134將製程參數的特徵碼分別傳輸至資料庫單元150以及判斷演算模組136。 Then step S137 is performed to generate a feature code of the process parameter, wherein the feature code of the process parameter is generated from the final signal curve. In terms of FIG. 1, the noise filter module 134 converts the final signal curve into the characteristic code of the corresponding process parameter. The noise filter module 134 transmits the characteristic code of the process parameter to the database unit 150 and the judgment algorithm respectively. Group 136.
獲得製程參數的特徵碼後,請復參閱圖2,接著進行步驟S140,判斷製程補償時間,依據製程參數的特徵碼,搜尋相似之設定參數,以決定蝕刻時間的一製程補償時間。詳細而言,請參閱圖8,步驟S140包括以下步驟S141~步驟S145,進行步驟S141,判斷是否到達偵測指定時間。接著進行步驟S142,若達偵測指定時間,執行判斷製程補償時間的步驟,傳輸製程補償時間。 After obtaining the feature code of the process parameter, please refer to FIG. 2, and then proceed to step S140 to determine the process compensation time. According to the feature code of the process parameter, search for similar setting parameters to determine a process compensation time of the etching time. For details, referring to FIG. 8, step S140 includes the following steps S141 to S145, and step S141 is performed to determine whether the specified time is reached. Then step S142 is performed. If the specified time is detected, the step of judging the process compensation time is performed, and the process compensation time is transmitted.
以圖1而言,若達偵測指定時間的77秒,判斷演算模組136處理製程參數來決定製程補償時間,判斷演算模組136依據製程參數的特徵碼,搜尋資料庫單元150中相似之設定參數,以決定製程補償時間。舉例而言,製程參數的特徵碼經搜尋後,找到相似的設定參數後可由資料庫單元150中提取相對應的特徵碼,所述相對應的特徵碼係有對應之蝕刻延長時間,故可由相對應的特徵碼計算並回授補償多久時間,判斷演算模組136將製程補償時間傳輸至信號控制模組138,信號控制模組138將製程補償時間指令傳輸至PLC控制單元120,PLC控制單元120傳輸製程補償時間指令至製程單元110。因此,本實施例透過上述步驟S140,可以在蝕刻時間之內的偵測指定時間回授至製程單元110所需蝕刻補償時間,以對基板蝕刻時間進行動態改善,而不是在基板蝕刻過後才進行分析。此外,透過產生製程參數的特徵碼的方式,來比對資料庫單元150中特徵碼,可減少資料量並加速後續搜尋時間。接著如圖2所示進行步驟S150,更新製程參數的特徵碼至資料庫參數,據此,信號控制模組138更新製程參數的特徵碼至資料庫單元150中的資料庫參數。 In terms of FIG. 1, if 77 seconds of the specified time is detected, the judgment calculation module 136 processes the process parameters to determine the process compensation time. The judgment calculation module 136 searches for similar data in the database unit 150 according to the feature code of the process parameters. Set the parameters to determine the process compensation time. For example, after searching for the feature code of the process parameter, after finding a similar setting parameter, the corresponding feature code can be extracted from the database unit 150. The corresponding feature code has a corresponding etching extension time, so The corresponding feature code calculates and feedbacks how long the compensation is, and the judgment calculation module 136 transmits the process compensation time to the signal control module 138, and the signal control module 138 transmits the process compensation time instruction to the PLC control unit 120, the PLC control unit 120 The process compensation time instruction is transmitted to the process unit 110. Therefore, in this embodiment, through the above step S140, the etching compensation time required for the process unit 110 can be fed back to the specified time within the etching time, so as to dynamically improve the substrate etching time, instead of performing it after the substrate is etched. analysis. In addition, comparing the feature codes in the database unit 150 by generating the feature codes of the process parameters can reduce the amount of data and speed up subsequent search time. Then, as shown in FIG. 2, step S150 is performed to update the feature code of the process parameter to the database parameter. Based on this, the signal control module 138 updates the feature code of the process parameter to the database parameter in the database unit 150.
此外,若判斷演算模組136經上述步驟S140判斷不需要製程補償時間,判斷演算模組136會傳輸移出基板的指令至信號控制模組138,信號控制模組138傳輸移出基板的指令至PLC控制單元,PLC控制單元接收信號控制模組138傳輸的移出基板的指令,PLC控制單元將移出基板的指令傳輸至製程單元110,製程單元110接收移出基板的指令後,將基板移出。 In addition, if the judgment calculation module 136 judges that no process compensation time is required through the above step S140, the judgment calculation module 136 transmits a command to remove the substrate to the signal control module 138, and the signal control module 138 transmits a command to remove the substrate to the PLC control The unit and the PLC control unit receive the instruction for removing the substrate transmitted by the signal control module 138. The PLC control unit transmits the instruction for removing the substrate to the processing unit 110. After the processing unit 110 receives the instruction for removing the substrate, the substrate is removed.
請復參閱圖8,若未達偵測指定時間,進行步驟S143,判斷是否在取樣時間範圍內。若未達取樣時間範圍內,進行步驟S144,執行步 驟S110設定參數中接收配方參數的步驟S112,若達取樣時間範圍內,進行步驟S145,執行步驟S120接收製程參數中偵測基板的透光率的步驟S124。 Please refer to FIG. 8 again. If the detection time is not reached, step S143 is performed to determine whether it is within the sampling time range. If it is not within the sampling time, step S144 is performed, and step S144 is executed. In step S110, the step S112 of receiving the recipe parameters is performed. If the sampling time is within the sampling time range, the step S145 is performed, and the step S120 is performed to receive the step S124 of detecting the light transmittance of the substrate in the process parameters.
綜上所述,在本發明的製程監控方法與製程監控系統,在蝕刻時間中的偵測指定時間內分析處理所偵測的製程參數,來決定是否要對蝕刻時間進行製程補償時間,對基板蝕刻時間進行動態改善。 In summary, in the process monitoring method and the process monitoring system of the present invention, the detected process parameters are analyzed and processed within a specified time of the detection in the etching time to determine whether to perform a process compensation time on the etching time and to control the substrate. The etching time is dynamically improved.
再者,本發明透過擷取符合在製程取樣範圍內的分類訊號曲線,此舉可類似於濾波過程,以濾除光感測元件因汙染、濕氣、反射等因素所偵測到的雜訊,以提升收取資料的品質,降低後續計算上的判斷失誤機率。 Furthermore, the present invention captures a classification signal curve that fits within the sampling range of the process. This can be similar to a filtering process to filter out noise detected by light sensing elements due to pollution, moisture, reflection and other factors. , In order to improve the quality of the received data and reduce the probability of judgment errors in subsequent calculations.
此外,本發明透過將不同光感測元件的製程參數同步發送,藉此降低因光感測元件通訊時間上的落差,也可避免造成量測同一時間點資料的時間誤差,更可降低後續計算上的錯誤率。 In addition, the present invention synchronously sends the process parameters of different light sensing elements, thereby reducing the gap in communication time due to the light sensing elements, which can also avoid the time error of measuring the data at the same time point, and can reduce subsequent calculations. Error rate.
以上所述,乃僅記載本發明為呈現解決問題所採用的技術手段的較佳實施方式或實施例而已,並非用來限定本發明專利實施的範圍。即凡與本發明專利申請範圍文義相符,或依本發明專利範圍所做的均等變化與修飾,皆為本發明專利範圍所涵蓋。 The above description only describes the preferred embodiments or examples of the technical means adopted by the present invention to solve the problem, and is not intended to limit the scope of patent implementation of the present invention. That is, all changes and modifications that are consistent with the meaning of the scope of patent application of the present invention, or made according to the scope of patent of the present invention, are covered by the scope of patent of the present invention.
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