TWI658002B - Method of manufacturing silicon monoxide deposit and manufacturing equipment implementing such method - Google Patents

Abstract

A method for manufacturing a silicon oxide deposit and manufacturing equipment for performing the method. The method according to the present invention uses multiple silicon dioxide shell / silicon core composite powders instead of using silicon powders and silicon dioxide powders to react to silicon oxide and sublimate it into silicon monoxide vapor, and then collects silicon monoxide vapor It is cooled to a silicon oxide deposit.

Description

Method for manufacturing silicon monoxide deposit and manufacturing equipment for carrying out the method

The present invention relates to a method for manufacturing a silicon monoxide deposit and a manufacturing device for performing the method, and in particular, to a method for manufacturing a silicon monoxide deposit without using a silicon powder and a silicon dioxide powder, and to execute the method Manufacturing equipment.

Silicon monoxide powder is a widely used material for optical glass coating and semiconductor manufacturing. For example, coatings for lighting fixtures, glasses, optical lenses, gems, toys and other important raw materials for the IC industry. For optical applications of silicon oxide, it can be used as anti-reflective coating, absorption coating, protective coating, etc. Silicon monoxide can be used as a protective insulating coating for liquid crystal conductive films. Silicon monoxide can be used as a protective insulating coating for semiconductor components. Silicon oxide can be used as a dielectric layer for thin film capacitors. Silicon monoxide can be used as an anti-reflection coating for solar cells. Silicon monoxide can be used as a deposition material for a gas barrier film. Silicon monoxide can be used as a negative electrode material for lithium ion rechargeable batteries

For the prior art of the manufacturing method of silicon monoxide, please refer to Mainland China Patent Publication No. 1451057A and US Patent Publication No. 7,431,899B2. These previous techniques revealed that mixing silicon powder with silicon dioxide powder, and placing silicon powder and silicon dioxide powder at high temperature to react with silicon oxide and sublimate it into silicon monoxide vapor, and then collect silicon monoxide vapor to separate it Cool to a silicon oxide deposit.

However, the specific surface area of silicon dioxide powder can be as high as 400-600 m ² / g, and the specific surface area of silicon powder is 3 m ² / g. One example of U.S. Patent Publication No. 7,431,899 B2 is that the specific surface area of silicon dioxide powder can be as high as 200 m ² / g, and the specific surface area of silicon powder is 3 m ² / g. And silicon powder are mixed together as a raw material, and the overall density of the mixture is 0.25 g / cm ³ . Therefore, the mixed powder of silicon dioxide powder and silicon powder per unit weight occupies a larger space and consumes more energy in heating.

In addition, since the reaction between the silicon powder and the silicon dioxide powder in the heating chamber is a solid phase reaction, the aforementioned contact area controls the reaction speed. Therefore, the smaller the contact area, the slower the reaction rate, and the less the amount of deposition per unit time.

At present, there is still a lack of a method for forming silicon monoxide without using the reaction between silicon powder and silicon dioxide powder to reduce the space of the heating chamber and reduce energy consumption.

In addition, the equipment for manufacturing silicon oxide deposits in the prior art has a large overall space. Not only does the larger heating space consume more energy, but its cooling design also has room for improvement.

Therefore, one technical problem to be solved by the present invention is to provide a method for manufacturing a silicon oxide deposit without using a silicon powder and a silicon dioxide powder, and a manufacturing equipment for performing the method. The method according to the present invention has a higher capacity per unit time. The overall volume of the manufacturing equipment according to the present invention is smaller, and it consumes less energy, and the production capacity per unit time is higher.

The method for manufacturing a silicon oxide deposit according to the first preferred embodiment of the present invention is to first prepare a plurality of silicon powders. Next, the method of the present invention heats a plurality of silicon powders to a first temperature and maintains a heating time, so that a silicon dioxide layer is formed on the surface of each silicon powder. Multiple silicon powders become multiple silicon dioxide shell / silicon composite powders. Next, in the method of the present invention, a plurality of silicon dioxide shell / silicon core composite powders are placed in a vacuum environment or a passive atmosphere and heated to a second temperature, so that each silicon dioxide shell / silicon core composite powder is Dioxide The silicon shell reacts with the silicon core to form silicon monoxide and sublimates into silicon monoxide vapor. Finally, the method of the present invention collects and cools silicon monoxide vapor to obtain silicon monoxide deposits.

In a specific embodiment, the Si / SO ₂ mole number ratio of the plurality of silica dioxide / silicon core composite powders ranges from 0.8 to 1.2.

In a specific embodiment, the first temperature ranges from 600 ° C to 900 ° C.

In a specific embodiment, the second temperature ranges from 1200 ° C to 1450 ° C.

The method for manufacturing a silicon oxide deposit according to the second preferred embodiment of the present invention is to first prepare a plurality of first silicon powders. Then, the method of the present invention heats a plurality of first silicon powders to a first temperature and maintains a heating time, so that a silicon dioxide layer is formed on the surface of each first silicon powder. Multiple first silicon powders become multiple silicon dioxide shell / silicon core composite powders. Next, in the method of the present invention, a plurality of silicon dioxide shell / silicon core composite powders and a plurality of second silicon powders are placed in a vacuum environment or a passive atmosphere and heated to a second temperature, so that each of them The silica shell of the silicon shell / silicon core composite powder reacts with the silicon core and each second silicon powder to form silicon monoxide and sublimates into silicon monoxide vapor. Finally, the method of the present invention collects and cools silicon monoxide vapor to obtain silicon monoxide deposits.

The manufacturing equipment of the first preferred embodiment of the present invention includes a furnace body, a cooling jacket, at least one deposition substrate, and a vacuum extraction device. A plurality of first silicon powder systems are placed in the furnace. The cooling jacket is arranged on the first top of the furnace body and communicates with the first top of the furnace body. The cooling jacket has a liquid storage cavity, a liquid inlet and a liquid outlet. At least one deposition substrate is placed in the cooling jacket and is thermally coupled to the inner wall of the cooling jacket. The vacuum extraction device is in communication with the second top of the cooling jacket. The furnace body heats a plurality of first silicon powders to a first temperature and maintains a heating time, so that the surface of each first silicon powder forms two Silicon oxide layer. Multiple first silicon powders become multiple silicon dioxide shell / silicon core composite powders. The vacuum extraction device continues to operate to form a vacuum environment inside the furnace and the cooling jacket. The furnace body then heats multiple silicon dioxide shells / silicon core composite powders or multiple silicon dioxide shells / silicon core composite powders with the newly added plurality of second silicon powders to a second temperature, so that each One silicon dioxide shell / silicon core composite powder of silicon dioxide shell and silicon core reaction or each silicon dioxide shell / silicon core composite powder of silicon dioxide shell and silicon core and each second silicon powder The body reacts to silicon monoxide and sublimates into silicon monoxide vapor. The cooling liquid flows from the liquid inlet of the cooling jacket into the liquid storage cavity of the cooling jacket and flows out of the liquid outlet of the cooling jacket, so that the temperature of at least one deposition substrate is lower than the third temperature, causing a silicon oxide flowing through the cooling jacket Vapor deposition is performed on at least one deposition substrate to form a silicon oxide deposit.

Further, the manufacturing apparatus according to the present invention further includes a first baffle. The first baffle plate is disposed above the space surrounded by the at least one deposition substrate. Silicon monoxide vapor is also deposited on the first baffle.

Further, the manufacturing apparatus according to the present invention further includes a second baffle. The vacuum pumping device is connected to the second top of the cooling jacket by a duct. The second baffle plate is arranged in the cooling jacket near the duct to prevent the silicon oxide vapor from being drawn out of the cooling jacket.

The manufacturing equipment of the second preferred embodiment of the present invention includes a furnace body, a cooling jacket, at least one deposition substrate, and a passive gas supply device. A plurality of first silicon powder systems are placed in the furnace. The cooling jacket is arranged on the first top of the furnace body and communicates with the first top of the furnace body. The cooling jacket has a liquid storage cavity, a liquid inlet and a liquid outlet. At least one deposition substrate is placed in the cooling jacket and is thermally coupled to the inner wall of the cooling jacket. The passive gas supply device is in communication with the second top of the cooling jacket. The furnace body heats the plurality of first silicon powders to a first temperature and maintains a heating time, so that a silicon dioxide layer is formed on the surface of each of the first silicon powders. Multiple first silicon powders become multiple silicon dioxide shell / silicon core composite powders. The passive gas supply device then continues to operate to supply a passive gas to form a passive atmosphere in the furnace and the cooling jacket. The furnace body will then Silicon dioxide shell / silicon core composite powder or heating multiple silicon dioxide shell / silicon core composite powders with newly added plurality of second silicon powders to a second temperature, resulting in each silicon dioxide shell The silicon dioxide shell of the / silicon core composite powder reacts with the silicon core or the silicon dioxide shell of each silicon dioxide shell / silicon core composite powder reacts with the silicon core and each second silicon powder to form silicon monoxide and Sublimation into silicon monoxide vapor. The cooling liquid flows from the liquid inlet of the cooling jacket into the liquid storage cavity of the cooling jacket and flows out of the liquid outlet of the cooling jacket, so that the temperature of at least one deposition substrate is lower than the third temperature, causing a silicon oxide flowing through the cooling jacket Vapor deposition is performed on at least one deposition substrate to form a silicon oxide deposit.

Unlike the prior art, the method of the present invention does not use silicon powder and silicon dioxide powder to make silicon monoxide deposits. The manufacturing equipment for implementing the method of the present invention has a smaller overall volume and less energy consumption, and has a higher productivity per unit time.

The advantages and spirit of the present invention can be further understood through the following detailed description of the invention and the accompanying drawings.

1‧‧‧method

S10 ~ S16‧‧‧Process steps

2‧‧‧Method

S20 ~ S26‧‧‧Process steps

3‧‧‧ manufacturing equipment

30‧‧‧furnace

300‧‧‧through hole

302‧‧‧First top

304‧‧‧ seat

306‧‧‧heater

32‧‧‧cooling jacket

322‧‧‧second top

324‧‧‧Storage chamber

326‧‧‧Liquid inlet

328‧‧‧Liquid outlet

34‧‧‧ Deposition substrate

342‧‧‧Space

36‧‧‧Vacuum extraction device

362‧‧‧catheter

37‧‧‧First baffle

38‧‧‧Second baffle

39‧‧‧ Passive gas supply device

40‧‧‧The first silicon powder

42‧‧‧Silica dioxide / silicon core composite powder

44‧‧‧Silicon monoxide vapor

46‧‧‧Silica oxide deposits

5‧‧‧ Crucible

L‧‧‧ cooling liquid

FIG. 1 is a flowchart of each program step of the method of the first preferred embodiment of the present invention.

FIG. 2 is a flowchart of each program step of the method of the second preferred embodiment of the present invention.

FIG. 3 is a schematic diagram of the structure of the manufacturing equipment of the first preferred embodiment of the present invention.

4 and 5 are schematic diagrams of the manufacturing equipment shown in FIG. 3 at different stages of manufacturing silicon oxide deposits.

FIG. 6 is a schematic diagram of a structure of a manufacturing apparatus according to a second preferred embodiment of the present invention.

FIG. 7 and FIG. 8 are schematic diagrams of the manufacturing equipment shown in FIG. 6 at different stages of manufacturing silicon oxide deposits.

Please refer to FIG. 1, which is a flowchart of a method 1 according to a first preferred embodiment of the present invention. Method 1 according to a preferred embodiment of the present invention does not use the silicon powder and the silicon dioxide powder used in the prior art to manufacture the silicon monoxide deposit.

As shown in FIG. 1, the method 1 of the present invention first executes step S10 to prepare a plurality of silicon powders.

In practical applications, the plurality of silicon powders can be high-purity silicon powders recovered from silicon mud. Silicon mud is obtained by cutting silicon rods and silicon ingots using wire cutting technology. The composition of silicon mud includes organic matter, metal substances, multiple silicon powders and multiple silicon carbide powders. Existing technologies can recover very pure silicon from silicon mud, which is not described in detail here.

Next, the method 1 of the present invention executes step S12 to heat a plurality of silicon powders to a first temperature and maintain a heating time, so that a silicon dioxide layer is formed on the surface of each silicon powder. In particular, multiple silicon powders become multiple silicon dioxide shell / silicon core composite powders.

In a specific embodiment, the first temperature ranges from 600 ° C to 900 ° C.

In one example, the average particle size of the plurality of silicon powders is 1 micron. The plurality of silicon powders are heated to 700 ° C. and maintained for 12 to 36 hours for carbon removal and subsequent surface oxidation. The Si / SO ₂ mole ratio of multiple silica dioxide / silicon core powders ranges from 0.8 to 1.2.

Next, the method 1 of the present invention executes step S14, placing a plurality of silicon dioxide shell / silicon core composite powders in a vacuum environment and heating to a second temperature, As a result, the silicon dioxide shell of each silicon dioxide shell / silicon core composite powder reacts with the silicon core to form silicon monoxide and sublimates into silicon monoxide vapor.

In a specific embodiment, the second temperature ranges from 1200 ° C to 1450 ° C.

In a specific embodiment, the vacuum degree of the vacuum environment is less than 1 torr.

Finally, the method of the present invention executes step S16 to collect and cool the silicon oxide vapor to obtain a silicon oxide deposit.

Please refer to FIG. 2, which is a flowchart of a method 2 according to a second preferred embodiment of the present invention. The method 2 according to a preferred embodiment of the present invention does not use the silicon powder and the silicon dioxide powder used in the prior art to manufacture silicon monoxide deposits.

As shown in FIG. 2, method 1 of the present invention first executes step S20 to prepare a plurality of first silicon powders.

In practical applications, similarly, the plurality of first silicon powders can be high-purity silicon powders recovered from silicon mud.

Next, the method 2 of the present invention executes step S22, heating a plurality of first silicon powders to a first temperature and maintaining a heating time, so that a silicon dioxide layer is formed on the surface of each first silicon powder. In particular, the plurality of first silicon powders becomes a plurality of silicon dioxide shell / silicon core composite powders.

In a specific embodiment, the first temperature ranges from 600 ° C to 900 ° C.

In one example, the average particle size of the plurality of first silicon powders is 1 micron. The plurality of first silicon powders are heated to 700 ° C. and maintained for 12 to 36 hours for carbon removal and subsequent surface oxidation.

Next, the method 2 of the present invention executes step S24, placing a plurality of silicon dioxide shell / silicon core composite powders and a plurality of second silicon powders in a vacuum environment and heating to a second temperature, so that each of the two dioxides The silica shell of the silicon shell / silicon core composite powder reacts with the silicon core and each second silicon powder to form silicon monoxide and sublimates into silicon monoxide vapor. The ratio of the Si / SO ₂ mole number of the plurality of silicon dioxide shell / silicon core powders to the plurality of second silicon powders ranges from 0.8 to 1.2. Similarly, the plurality of second silicon powders may be high-purity silicon powders recovered from silicon mud.

In a specific embodiment, the second temperature ranges from 1200 ° C to 1450 ° C.

In a specific embodiment, the vacuum degree of the vacuum environment is less than 1 torr.

Finally, the method of the present invention executes step S16 to collect and cool the silicon oxide vapor to obtain a silicon oxide deposit.

Please refer to FIG. 3. FIG. 3 schematically illustrates the structure of the manufacturing equipment 3 of the first preferred embodiment of the present invention. In FIG. 3, some components and devices are shown in a cross-sectional view.

As shown in FIG. 3, the manufacturing equipment 3 according to the first preferred embodiment of the present invention includes a furnace body 30, a cooling jacket 32, at least one deposition substrate 34, and a vacuum extraction device 36.

The furnace body 30 includes a thermally insulated base body 304 and at least one heater 306. In a specific embodiment, the base 304 may be made of carbon fiber, but is not limited thereto.

The cooling jacket 32 is disposed on the first top portion 302 of the furnace body 30 and communicates with the first top portion 302 of the furnace body 30. For example, as shown in FIG. 3, the first top portion 302 of the furnace body 30 has a plurality of through holes 300. The plurality of through holes 300 allow the cooling jacket 32 to communicate with the first top portion 302 of the furnace body 30.

The cooling jacket 32 has a liquid storage cavity 324, a liquid inlet 326, and a liquid outlet 328. Cooling liquid L from liquid inlet 326 of cooling jacket 32 The liquid storage cavity 324 flowing into the cooling jacket 32 flows out from the liquid outlet 328 of the cooling jacket 32.

At least one deposition substrate 34 is placed in the cooling jacket 32 and is thermally coupled to the inner wall of the cooling jacket 32. The vacuum extraction device 36 is in communication with the second top portion 322 of the cooling jacket 32.

Please refer to FIG. 3, FIG. 4 and FIG. 5 again, and use the manufacturing equipment 3 according to the first preferred embodiment of the present invention to manufacture the silicon oxide deposit 46 as described below.

As shown in FIG. 3, first, a plurality of silicon powders 40 are placed in the crucible 5, and then the crucible 5 containing the plurality of first silicon powders 40 is placed in the furnace body 30. At least one heater 306 surrounds the crucible 5 outer walls. In a specific embodiment, the crucible 5 may be made of graphite, but is not limited thereto.

As shown in FIG. 4, the furnace body 30 heats the plurality of first silicon powder bodies 40 to a first temperature and maintains a heating time, so that a silicon dioxide layer is formed on the surface of each of the first silicon powder bodies 40. The plurality of silicon powders 40 become a plurality of silicon dioxide shell / silicon core composite powders 42. The range of the first temperature and the range of the Si / SO ₂ ratio of the plurality of silicon dioxide shell / silicon core powders are as described above, and are not repeated here.

As shown in FIG. 5, the vacuum extraction device 36 continues to operate to form a vacuum environment in the furnace body 30 and the cooling jacket 32. The furnace body 30 then combines a plurality of silicon dioxide shells / silicon core composite powders 42 or a plurality of silicon dioxide shells / silicon core composite powders 42 with newly added plurality of second silicon powders (not shown in the figure) Middle) together to the second temperature, causing the silica dioxide of each silica shell / silicon core composite powder 42 and the silica or the silica of each silica shell / silicon core composite powder 42 The silicon shell reacts with the silicon core and each second silicon powder to form silicon oxide and sublimate into silicon oxide vapor 44. Silicon monoxide vapor 44 flows through the through hole 300 and flows into the cooling jacket 32. The through hole 300 can also prevent the silicon dioxide shell / silicon core composite powder 42 from splashing into the cooling jacket 32.

The cooling liquid L continuously flows from the liquid inlet 326 of the cooling jacket 32 into the liquid storage cavity 324 of the cooling jacket 32 and flows out of the liquid outlet 328 of the cooling jacket 32, so that the temperature of at least one deposition substrate 34 is lower than the third temperature, causing A silicon oxide vapor 44 in the cooling jacket 32 is deposited on at least one deposition substrate 34 to form a silicon oxide deposit 46. The range of the second temperature and the degree of vacuum of the vacuum environment are as described above, and are not repeated here.

In a specific embodiment, the cooling liquid L may be water, but is not limited thereto.

In a specific embodiment, the third temperature is 400 ° C.

Further, as shown in FIG. 3, the manufacturing equipment 3 according to the first preferred embodiment of the present invention further includes a first baffle plate 37. The first baffle plate 37 is disposed above the space 342 surrounded by the at least one deposition substrate 34. Silicon monoxide vapor 46 is also deposited on the first baffle plate 37.

Further, as shown in FIG. 3, the manufacturing apparatus 3 according to the first preferred embodiment of the present invention further includes a second baffle plate 38. The vacuum pumping device 36 is in communication with the second top portion 322 of the cooling jacket 32 through a duct 362. The second baffle plate 38 is disposed in the cooling jacket 32 near the duct 362 to prevent the silicon oxide vapor 46 from being drawn out of the cooling jacket 32.

After the silicon oxide deposit 46 is manufactured, at least one deposition substrate 34 and the first baffle plate 37 can be taken out of the cooling jacket 32 to collect the silicon oxide deposit 46. The silicon oxide deposit 46 produced according to the method of the present invention is a black deposit.

In one example, 1 kg of silicon powder is oxidized into a silicon dioxide shell / silicon core composite powder, and the overall density of the silicon dioxide shell / silicon core powder is about 0.656 g / cm ³ . The silicon monoxide deposit produced according to the method of the present invention can produce a silicon monoxide black deposit with a yield of more than 90% in about 6 hours.

Compared with the prior art, if the prior art uses silicon dioxide powder with a particle size of 40 nm and silicon powder as a raw material, the overall density of the mixture is 0.25 g / cm ³ . If prior art materials are used the bulk density of 0.25g / cm ³ mixed powder was heated space which is required for the present invention is employed in the overall density of about 0.656g / cm ³ of silicon dioxide shell / silica core composite powder 2.5 times. Obviously, the energy consumed to make the silicon monoxide deposits according to the method of the invention is lower.

Please refer to FIG. 6. FIG. 6 schematically illustrates the structure of the manufacturing equipment 3 of the second preferred embodiment of the present invention. In FIG. 6, some components and devices are shown in a cross-sectional view.

As shown in FIG. 6, similar to the manufacturing equipment 3 according to the first preferred embodiment of the present invention, the manufacturing equipment 3 according to the second preferred embodiment of the present invention also includes a furnace body 30, a cooling jacket 32, and At least one deposition substrate 34. Differently, the manufacturing equipment 3 according to the second preferred embodiment of the present invention also includes a passive gas supply device 39, but does not include a vacuum pumping device 36. The passive gas supply device 39 is in communication with the second top portion 322 of the cooling jacket 32. Elements, components, and devices in FIG. 6 that have the same reference numerals as those in FIG. 3 have the same or similar structures and functions, and will not be repeated here.

Please refer to FIG. 6, FIG. 7 and FIG. 8 again, and use the manufacturing equipment 3 according to the second preferred embodiment of the present invention to manufacture the silicon oxide deposit 46 as described below.

As shown in FIG. 6, first, a plurality of silicon powder bodies 40 are placed in the crucible 5, and then the crucible 5 containing the plurality of first silicon powder bodies 40 is placed in the furnace body 30, and at least one heater 306 surrounds the crucible. 5 outer walls. In a specific embodiment, the crucible 5 may be made of graphite, but is not limited thereto.

As shown in FIG. 7, the furnace body 30 heats the plurality of first silicon powder bodies 40 to a first temperature for a heating time, so that a silicon dioxide layer is formed on the surface of each of the first silicon powder bodies 40. The plurality of silicon powders 40 become a plurality of silicon dioxide shell / silicon core composite powders 42. The range of the first temperature and the range of the Si / SO ₂ ratio of the plurality of silicon dioxide shell / silicon core powders are as described above, and are not repeated here.

As shown in FIG. 8, the passive gas supply device 39 continues to operate to supply a passive gas (for example, argon) to form a passive atmosphere in the furnace body 30 and the cooling jacket 32. The furnace body 30 then combines a plurality of silicon dioxide shells / silicon core composite powders 42 or a plurality of silicon dioxide shells / silicon core composite powders 42 and a plurality of newly added second silicon powders (not shown in the figure). Middle) together to the second temperature, causing the silica dioxide of each silica shell / silicon core composite powder 42 and the silica or the silica of each silica shell / silicon core composite powder 42 The silicon shell reacts with the silicon core and each second silicon powder to form silicon oxide and sublimate into silicon oxide vapor 44. Silicon monoxide vapor 44 flows through the through hole 300 and flows into the cooling jacket 32. The through hole 300 can also prevent the silicon dioxide shell / silicon core composite powder 42 from splashing into the cooling jacket 32.

The cooling liquid L continuously flows from the liquid inlet 326 of the cooling jacket 32 into the liquid storage cavity 324 of the cooling jacket 32 and flows out of the liquid outlet 328 of the cooling jacket 32, so that the temperature of at least one deposition substrate 34 is lower than the third temperature, causing A silicon oxide vapor 44 in the cooling jacket 32 is deposited on at least one deposition substrate 34 to form a silicon oxide deposit 46. Various process parameters and conditions are as described above, and will not be repeated here. The components, components, and devices in FIG. 7 and FIG. 8 that have the same reference numerals as those in FIG. 4 and FIG. 5 have the same or similar structures and functions, and will not be repeated here.

Further, similarly, the manufacturing apparatus 3 according to the first preferred embodiment of the present invention further includes a first baffle plate 37 and a second baffle plate 38. The passive gas supply device 39 is in communication with the second top portion 322 of the cooling jacket 32 through a conduit 362. The second baffle plate 38 is disposed in the cooling jacket 32 near the duct 362 to block the silicon oxide vapor 46 from entering the duct 362.

Compared with the prior art, the silicon dioxide shell / silicon core composite powder used in the present invention has a larger contact area between silicon dioxide and silicon. So execute The manufacturing equipment of the method of the present invention has a small overall volume, consumes less energy, and has a higher capacity per unit time.

With the above detailed description of the preferred embodiments, it is hoped that the features and spirit of the present invention may be more clearly described, rather than limiting the aspects of the present invention with the preferred embodiments disclosed above. On the contrary, the intention is to cover various changes and equivalent arrangements within the scope of the patent scope of the present invention. Therefore, the aspect of the patent scope of the present invention should be explained in the broadest sense according to the above description, so that it covers all possible changes and equal arrangements.

Claims (15)

A method for manufacturing a silicon oxide deposit includes the following steps: preparing a plurality of silicon powders; heating the plurality of silicon powders to a first temperature and maintaining a heating time, so that the surface of each silicon powder is formed A silicon dioxide layer, the plurality of silicon powders are changed into a plurality of silicon dioxide shells / silicon core composite powders; the plurality of silicon dioxide shells / silicon core composite powders are placed in a vacuum environment or a passive state Medium and heated to a second temperature, causing the silica shell of each silica shell / silicon core composite powder to react with the silica core to form silicon oxide and sublimate into a silicon oxide vapor; and collect and cool the oxide Silicon vapor, the silicon monoxide deposit is obtained. The method according to claim 1, wherein one of the plurality of silica dioxide shells / silicon core composite powders has an overall density ranging from 0.62 g / cm ³ to 0.68 g / cm ³ , and the plurality of silica shells / One of the silicon core composite powders has a Si / SO ₂ mole ratio ranging from 0.8 to 1.2. The method according to claim 2, wherein the first temperature ranges from 600 ° C to 900 ° C, and the second temperature ranges from 1200 ° C to 1450 ° C. A method for manufacturing a silicon oxide deposit includes the following steps: preparing a plurality of first silicon powders; heating the plurality of first silicon powders to a first temperature and maintaining a heating time, so that each A silicon dioxide layer is formed on the surface of a silicon powder, and the plurality of first silicon powders become a plurality of silicon dioxide shells / silicon core composite powders; the plurality of silicon dioxide shells / silicon core composite powders and a plurality of The second silicon powder is placed in a vacuum environment or a passive atmosphere and heated to a second temperature, so that the silicon dioxide shell and silicon core of each silicon dioxide shell / silicon core composite powder and each The second silicon powder is reacted into silicon monoxide and sublimates into silicon monoxide vapor; and the silicon monoxide vapor is collected and cooled to obtain the silicon monoxide deposit. The method according to claim 4, wherein the first temperature ranges from 600 ° C to 900 ° C, and the second temperature ranges from 1200 ° C to 1450 ° C. A manufacturing equipment includes: a furnace body, in which a plurality of first silicon powder systems are placed in the furnace body; and a cooling jacket, which is arranged on a first top of one of the furnace bodies and is connected to the first of the furnace body. The cooling jacket has a liquid storage cavity, a liquid inlet, and a liquid outlet; at least one deposition substrate is placed in the cooling jacket and is thermally coupled to an inner wall of the cooling jacket; and a vacuum The air extraction device is in communication with a second top of the cooling jacket; wherein the furnace body heats the plurality of first silicon powder bodies to a first temperature and maintains a heating time, so that each of the first silicon powder bodies A silicon dioxide layer is formed on the surface of the body, and the plurality of first silicon powders are changed into a plurality of silicon dioxide shell / silicon core composite powders; the vacuum extraction device continues to operate to form the furnace body and the cooling jacket. A vacuum environment; the furnace body then heats the plurality of silica dioxide shells / silicon core composite powders or the plurality of silica dioxide shells / silicon core composite powders with the newly added plurality of second silica powders To a second temperature, causing every dioxin The silica shell of the silicon shell / silicon core composite powder reacts with the silicon core or the silicon dioxide shell of each silicon dioxide shell / silicon core composite powder reacts with the silicon core and each second silicon powder to form an oxide Silicon and sublimates into silicon monoxide vapor; a cooling liquid flows from the liquid inlet into the liquid storage cavity and flows out from the liquid outlet, so that the temperature of the at least one deposition substrate is lower than a third temperature, causing it to flow through the cooling jacket The silicon oxide vapor is deposited on the at least one deposition substrate to form a silicon oxide deposit. The manufacturing equipment according to claim 6, further comprising a first baffle plate, which is disposed above one of a space surrounded by the at least one deposition substrate, wherein the silicon monoxide vapor is also deposited on the first baffle plate. on. The manufacturing equipment according to claim 7, further comprising a second baffle, wherein the vacuum pumping device is connected to the second top of the cooling jacket by a duct, and the second baffle is disposed on the cooling The jacket is close to the conduit to prevent the silicon monoxide vapor from being drawn out of the cooling jacket. The manufacturing equipment according to claim 8, wherein one of the plurality of silica dioxide shells / silicon core composite powders has an overall density ranging from 0.62 g / cm ³ to 0.68 g / cm ³ , the plurality of silica shells The Si / SO ₂ molar ratio of one of the silicon / silicon core composite powders ranges from 0.8 to 1.2. The manufacturing equipment according to claim 9, wherein the first temperature range is from 600 ° C to 900 ° C, the second temperature range is from 1200 ° C to 1450 ° C, and the third temperature is 400 ° C. A manufacturing equipment includes: a furnace body, in which a plurality of first silicon powder systems are placed in the furnace body; and a cooling jacket, which is arranged on a first top of one of the furnace bodies and is connected to the first of the furnace body. The cooling jacket is connected at the top, and the cooling jacket has a liquid storage cavity, a liquid inlet and a liquid outlet; at least one deposition substrate is placed in the cooling jacket and is thermally coupled to an inner wall of the cooling jacket; and a blunt Gas supply device is in communication with a second top of one of the cooling jackets; wherein the furnace body heats the plurality of first silicon powders to a first temperature and maintains a heating time, so that each of the first silicon powders A silicon dioxide layer is formed on the surface of the powder, and the plurality of first silicon powders become a plurality of silicon dioxide shell / silicon core composite powders. The passive gas supply device then continuously operates to supply a passive gas to the furnace body. And a passive atmosphere is formed in the cooling jacket; the furnace body then combines the plurality of silicon dioxide shells / silicon core composite powders or the plurality of silicon dioxide shells / silicon core composite powders with the newly added plurality The second silicon powder is heated to the first The temperature causes the silicon dioxide shell of each silicon dioxide shell / silicon core composite powder to react with the silicon core or the silicon dioxide shell and silicon core of each silicon dioxide shell / silicon core composite powder and each The second silicon powder reacts into silicon oxide and sublimates into silicon monoxide vapor; a cooling liquid flows from the liquid inlet into the liquid storage cavity and flows out from the liquid outlet, so that the temperature of the at least one deposition substrate is lower than a third temperature Causing the silicon oxide vapor flowing through the cooling jacket to be deposited on the at least one deposition substrate to form a silicon oxide deposit. The manufacturing equipment according to claim 11, further comprising a first baffle plate, which is disposed above one of a space surrounded by the at least one deposition substrate, wherein the silicon monoxide vapor is also deposited on the first baffle plate. on. The manufacturing equipment according to claim 12, further comprising a second baffle, wherein the passive gas supply device is connected to the second top of the cooling jacket by a duct, and the second baffle is disposed on the The cooling jacket is close to the conduit to block the silicon monoxide vapor from entering the conduit. The manufacturing equipment according to claim 13, wherein one of the plurality of silica dioxide shells / silicon core composite powders has an overall density ranging from 0.62 g / cm ³ to 0.68 g / cm ³ , the plurality of silica shells The Si / SO ₂ molar ratio of one of the silicon / silicon core composite powders ranges from 0.8 to 1.2. The manufacturing equipment according to claim 14, wherein the first temperature ranges from 600 ° C to 900 ° C, the second temperature ranges from 1200 ° C to 1450 ° C, and the third temperature is 400 ° C.