TWI654465B - Transposition head and transposition device - Google Patents

Abstract

A transposition head includes a substrate, a first electrode, a second electrode, a driving circuit, and an elastic body. The substrate has a top surface. The first electrode is disposed on the substrate. The second electrode is disposed on the substrate and separated from the first electrode structure. The driving circuit is disposed on the substrate and is electrically connected to the first electrode and the second electrode. The elastic body is disposed on the substrate and covers the first electrode and the second electrode. At least one of the first electrode and the second electrode has a vertex, and the distance between the vertex and the top surface of the substrate is A. The elastomer It has a transposed surface, and the distance between the transposed surface and the top surface of the substrate is B, and 1> A / B ≧ 0.1.

Description

Transpose head and transpose device

The invention relates to a transposition head and a transposition device, and in particular to a transposition head and a transposition device for transposing a micro light-emitting diode.

Transposed micro-light-emitting diode technology has been used in the manufacturing process of emerging electronic devices. Taking the manufacturing process of the light-emitting device as an example, the manufacturing process of the light-emitting device includes the following steps: providing an elastic transposition head with a plurality of transposed bumps; providing a light-emitting array including a plurality of target light-emitting elements; The transposed bump of the head is in contact with the target light-emitting element, thereby extracting a plurality of target light-emitting elements as desired; the target light-emitting element is transposed to the receiving substrate by using an elastic transposition head; Other structures are made to complete the light emitting device. However, when the scale of the transposition process is enlarged, the current transposition method using an elastic transposition head with a plurality of transposition bumps will face the problems of low process yield, low accuracy, and difficult mass production.

The invention provides a transposition head and a transposition device, which can achieve good process yield and operation accuracy when applied to a large number of transposition processes.

The transposition head of the present invention includes a substrate, a first electrode, a second electrode, a driving circuit, and an elastic body. The substrate has a top surface. The first electrode is disposed on the substrate. The second electrode is disposed on the substrate and separated from the first electrode structure. The driving circuit is disposed on the substrate and is electrically connected to the first electrode and the second electrode. The elastic body is disposed on the substrate and covers the first electrode and the second electrode. At least one of the first electrode and the second electrode has a vertex, and the distance between the vertex and the top surface of the substrate is A. The elastomer It has a transposed surface, and the distance between the transposed surface and the top surface of the substrate is B, and A / B ≧ 0.1.

The transposition device of the present invention includes the transposition head as described above and a carrier. The carrier is used to carry the transposed head and is electrically connected with the transposed head.

Based on the above, in the transposition head and the transposition device proposed by the present invention, the first electrode and the second electrode are covered by an elastomer having a transposition surface, wherein the second electrode is separated from the first electrode structure, and the first electrode The distance A from the vertex of at least one of the second electrodes to the top surface of the substrate and the distance B between the transposed surface and the top surface of the substrate satisfy the following relationship: 1> A / B ≧ 0.1 So that the transposition head and transposition device of the present invention can drive with a low operating voltage without generating any patterned structure on the transposition surface to generate a uniformly distributed lateral electric field between the first electrode and the second electrode. . In this way, the transposition surface is deformed by the action of the transverse electric field, which not only enables the transposition head and the transposition device of the present invention to effectively achieve the transposition function, but also improves the transposition head and the transposition device of the present invention. Applicability, convenience, and product competitiveness, and compared with the conventional transposition device with multiple transposition bumps, the transposition head and transposition device of the present invention can achieve good results when applied to a large number of transposition processes Process yield and operation accuracy.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

FIG. 1 is a schematic cross-sectional view of a transposition head according to an embodiment of the present invention. FIG. 2 is a schematic top view of the transpose head of FIG. 1. The cross-sectional position of FIG. 1 may correspond to the position of the cross-sectional line I-I 'of FIG. 2.

Please refer to FIG. 1 and FIG. 2 at the same time. The transposition head 10 of this embodiment includes a substrate 100, a first electrode 110, a second electrode 120, a driving circuit 130, and an elastic body 140. In addition, in this embodiment, the transposition head 10 may further include a first bump P1 and a second bump P2. In this embodiment, the transposition head 10 can be used to transpose a micro light emitting diode to manufacture a display device. It is worth noting that, in order to clearly illustrate the configuration relationship between the first electrode 110, the second electrode 120, and the driving circuit 130, the elastic body 140 is omitted from FIG. 2.

The substrate 100 is used to carry the first electrode 110, the second electrode 120, the driving circuit 130, and the elastic body 140. In this embodiment, the material of the substrate 100 may be, for example, glass, quartz, or an organic polymer.

The first electrode 110 and the second electrode 120 are disposed on the substrate 100. In this embodiment, the first electrode 110 and the second electrode 120 are structurally separated from each other. In this embodiment, the first electrode 110 is used to configure a first voltage V1, the second electrode 120 is used to configure a second voltage V2, and there is a voltage difference between the first voltage V1 and the second voltage V2. That is, the first electrode 110 and the second electrode 120 are electrically connected to different voltage sources. In one embodiment, the first voltage V1 is greater than the second voltage V2. Further, because there is a voltage difference between the first voltage V1 and the second voltage V2, when the first electrode 110 is applied with the first voltage V1 and the second electrode 120 is applied with the second voltage V2, the first electrode 110 and the first A lateral electric field is formed between the two electrodes 120.

In addition, as shown in FIG. 2, the shapes of the first electrode 110 and the second electrode 120 are straight, but the present invention is not limited thereto. In other embodiments, in order to meet the requirements for the image quality of the display device, the shapes of the first electrode 110 and the second electrode 120 may be diagonal stripes (as shown in FIG. 3A) and sawtooth shapes (as shown in FIG. 3B). , Ladder-like (as shown in Figure 3C) or wave-like (as shown in Figure 3D).

In this embodiment, the first bump P1 and the second bump P2 are disposed on the substrate 100, and the first bump P1 and the second bump P2 are separated from each other. In detail, in this embodiment, the first bump P1 and the second bump P2 are provided corresponding to the first electrode 110 and the second electrode 120, respectively. In more detail, in this embodiment, the first electrode 110 covers the top surface and the side surface of the first bump P1, and the second electrode 120 covers the top surface and the side surface of the second bump P2.

From another point of view, in this embodiment, the first electrode 110 and the first bump P1 constitute a first electrode structure E1, and the second electrode 120 and the second bump P2 constitute a second electrode structure E2, where the first The electrode structure E1 has an electrode structure top surface E1a and an electrode structure bottom surface E1b opposite to each other, and the second electrode structure E2 has an electrode structure top surface E2a and an electrode structure bottom surface E2b opposite to each other.

In this embodiment, the material of the first bump P1 and the second bump P2 is, for example, an insulating material, and the insulating material includes, for example, an inorganic material, an organic material, a combination thereof, or a stacked layer thereof, wherein the inorganic material is ( But not limited to: silicon oxide, silicon nitride, silicon oxynitride, a combination of the above, or other suitable materials. Organic materials such as (but not limited to): polyester (PET), polyolefin, polypropylene, Polycarbonates, polyalkylene oxides, polystyrenes, polyethers, polyketones, polyalcohols, polyaldehydes, combinations thereof, or other suitable materials.

In addition, although FIG. 1 illustrates that the first electrode 110 covers the top surface and the side surface of the first bump P1 and the second electrode 120 covers the top surface and the side surface of the second bump P2, the present invention is not limited thereto. In one embodiment, the first electrode 110 and the second electrode 120 may cover only the top surface of the first bump P1 and the top surface of the second bump P2, respectively. In another embodiment, the first electrode 110 may also cover the top surface and part of the side surface of the first bump P1, and the second electrode 120 may also cover the top surface and part of the side surface of the second bump P2.

In addition, although FIG. 1 illustrates that the cross-sectional outlines of the first bump P1 and the second bump P2 are rectangular, the present invention is not limited thereto. In other embodiments, the cross-sectional profile of the first bump P1 and the second bump P2 may also be trapezoidal (as shown in FIG. 4A), inverted trapezoidal (as shown in FIG. 4B), or bidirectional trapezoidal (as shown in FIG. 4B). 4C).

It is worth mentioning that, in this embodiment, the ratio of the area of the top surface E1a of the electrode structure of the first electrode structure E1 to the area of the bottom surface E1b of the electrode structure is preferably greater than 0.6, and the top of the electrode structure of the second electrode structure E2 The ratio of the area of the surface E2a to the area of the bottom surface E2b of the electrode structure is preferably greater than 0.6, so that when the transducing head 10 is used to transpose the micro-light emitting diode, the transducing head 10 can be driven with a lower operating voltage. . From another point of view, in this embodiment, the outline of the first bump P1 and the second bump P2 is preferably a platform-like structure, such as a rectangle (as shown in FIG. 1), a trapezoid (as shown in FIG. 4A). Shown), inverted trapezoid (as shown in Figure 4B) or bidirectional trapezoid (as shown in Figure 4C). However, the present invention is not limited to this. In other embodiments, the outline shape of the first bump P1 and the second bump P2 may not be a platform structure, that is, the first electrode structure E1 and the second electrode structure E2 may not have the electrode structure top surface E1a and Electrode structure top surface E2a. For example, in one embodiment, the cross-sectional profile of the first bump P1 and the second bump P2 may be triangular (as shown in FIG. 5A) or arc-shaped (as shown in FIG. 5B).

Hereinafter, with reference to FIG. 7, adjusting the ratio of the area of the electrode structure top surface E1a to the area of the electrode structure bottom surface E1b and the ratio of the area of the electrode structure top surface E2a to the area of the electrode structure bottom surface E2b can reduce the transposition head. 10 operating voltage.

FIG. 7 is a simulation relationship diagram of the ratio of the operating voltage of the transposed head of FIG. 1 to the area of the top surface of the electrode structure and the area of the bottom surface of the electrode structure. It is worth mentioning that in the analog measurement of the operating voltage of the transposed head 10, liquid crystal molecules must be additionally provided in the elastomer 140 to quantify the direction and direction of the lateral electric field through the performance of the liquid crystal molecules due to the influence of the lateral electric field. Size in order to obtain simulation test results.

As can be seen from FIG. 7, as the ratio of the area of the top surface E1a of the electrode structure to the area of the bottom surface E1b of the electrode structure and the ratio of the area of the top surface E2a of the electrode structure to the area of the bottom surface E2b of the electrode structure are adjusted from 0.2 to 1, transpose The operating voltage of the head 10 gradually decreases. When the ratio of the area of the electrode structure top surface E1a to the area of the electrode structure bottom surface E1b and the area of the electrode structure top surface E2a to the area of the electrode structure bottom surface E2b are 0.6, the operating voltage of the transpose head 10 is reduced to About 17 V, and when the ratio of the area of the electrode structure top surface E1a to the area of the electrode structure bottom surface E1b and the area of the electrode structure top surface E2a to the area of the electrode structure bottom surface E2b is 1, the transpose head 10 The operating voltage is even lowered to about 12.5 V. This result confirms that the transposition head 10 of the present invention can indeed adjust the ratio of the area of the electrode structure top surface E1a to the area of the electrode structure bottom surface E1b or the area of the electrode structure top surface E2a to the area of the electrode structure bottom surface E2b. The ratio is used to reduce the operating voltage of the transpose head 10 so as to improve the applicability, convenience and product competitiveness of the transpose head 10.

The driving circuit 130 is disposed on the substrate 100, and the driving circuit 130 is electrically connected to the first electrode 110 and the second electrode 120, so as to electrically connect external signals (such as the first voltage V1 and the second voltage V2) to the first electrode. 110 与 第二 electrode 120. In this embodiment, the driving circuit 130 is, for example, a passive element array layer, which may be any type of passive element array layer for display devices known to those having ordinary knowledge in the art. For example, in one embodiment, the driving circuit 130 may include a signal line connected to the first electrode 110, a signal line connected to the second electrode 120, and a contact point connecting the aforementioned signal line and an external circuit. That is, in the present embodiment, the driving circuit 130 is a passive driving circuit.

In addition, in order to meet the image quality requirements of the display device, the layout of the driving circuit 130 is not limited to those depicted in FIG. 2. In other embodiments, the layout of the driving circuit 130 may be as shown in FIG. 6A or FIG. 6B.

It is worth mentioning that, in this embodiment, the driving circuit 130 may be any type of passive element array layer for display devices known to those skilled in the art, and the first electrode 110 and the second electrode 110 The electrodes 120 are substantially disposed on the same plane, so the transposition head 10 has a design similar to In-Plane Switching (IPS), thereby making the production of the transposition head 10 compatible with the manufacturing process of the existing display device. .

Please refer to FIG. 1 at the same time. The elastic body 140 is disposed on the substrate 100 and covers the first electrode 110 and the second electrode 120. In this embodiment, the elastic body 140 has a transposition surface 140a. In detail, when the transposition head 10 is not transposed, the entire transposition surface 140 a is substantially a single and continuous plane. That is, in this embodiment, the transposition surface 140a does not have any patterned structure.

In this embodiment, the material of the elastomer 140 is, for example (but not limited to): polydimethylsiloxane (PDMS), rubber, or epoxy resin. It is worthwhile It is mentioned that in this embodiment, the elastic body 140 can be used to adhere the micro-light-emitting diodes, so as to extract the micro-light-emitting diodes during the operation of transposing the micro-light-emitting diodes.

In addition, in this embodiment, the first electrode 110 and the second electrode 120 have the highest apex T. In detail, since the outline shape of the first bump P1 and the second bump P2 is a platform structure, any point on the surface of the first electrode 110 covering the top surface of the first bump P1 is the highest vertex. T, and any point on the surface of the second electrode 120 covering the top surface of the second bump P2 is the highest vertex T. In this embodiment, the distance A between the most apex T and the top surface S of the substrate 100 and the distance B between the transposed surface 140a and the top surface S of the substrate 100 satisfy the following relationship: 1> A / B ≧ 0.1, so that when the micro-light-emitting diode is transposed using the transposition head 10, the first and second electrodes V1 and V2 are applied to the first and second electrodes 110 and 120 to generate a lateral direction between them. The electric field can be evenly distributed in the elastic body 140, so that the elastic body 140 is affected by the lateral electric field, which causes the corresponding transposed surface 140a to be uneven. In this way, the micro-light emitting diode adhered to the transposition surface 140a will be disengaged from the elastic body 140 due to the deformation of the transposition surface 140a, thereby achieving the transposition function.

8 and 9, when the transposition process is performed using the transposition head 10, the transposition head 10 can be driven with a low operating voltage and obtain a lateral electric field uniformly distributed in the elastic body 140. Effectively achieve the transpose function.

FIG. 8 is a simulation relationship diagram of the ratio of the operating voltage to the distance A and the distance B of the transpose head of FIG. 1. It is worth mentioning that in the analog measurement of the operating voltage of the transposed head 10, liquid crystal molecules must be additionally provided in the elastomer 140 to quantify the direction and direction of the lateral electric field through the performance of the liquid crystal molecules due to the influence of the lateral electric field. Size in order to obtain simulation test results.

As can be seen from FIG. 8, when the ratio of the distance A to the distance B is 0.1, the operating voltage of the transpose head 10 is reduced to about 40 V, and when the ratio of the distance A to the distance B is 0.2 to 0.7, the The operating voltage is further reduced to about 10 V to 20 V. This result confirms that the transposed head 10 of the present invention can indeed reduce the operating voltage of the transposed head 10 by adjusting the ratio of the distance A to the distance B to satisfy the following relationship: 1> A / B ≧ 0.1.

FIG. 9 is a simulation relationship diagram of the transmittance of the transposed head of FIG. 1 with respect to the ratio of the distance A to the distance B. FIG. Similarly, in the simulation measurement of the transmissivity of the transposed head 10, liquid crystal molecules must be additionally provided in the elastomer 140 to quantify the direction and size of the lateral electric field through the performance of the liquid crystal molecules due to the influence of the lateral electric field. In order to obtain the simulation test results.

It can be seen from FIG. 9 that when the ratio of the distance A to the distance B is 0.1, the transmissivity of the transpose head 10 can reach about 85%, and when the ratio of the distance A to the distance B is 0.2 to 0.7, the transpose head 10 The transmission rate is increased to about 94% to 98%. This result confirms that the ratio of the transmission distance A to the distance B satisfies the following relationship: 1> A / B ≧ 0.1, the transpose head 10 can be driven with a low operating voltage and obtain a good transmittance. That is, driving the transposition head 10 with a low operating voltage can generate a uniformly distributed lateral electric field between the first electrode 110 and the second electrode 120, thereby not only effectively achieving the transposition function, but also improving the transposition head. 10 application, convenience and product competitiveness.

In view of this, in this embodiment, the transposition surface 140a does not need to be provided with any patterned structure to achieve the transposition function. In this way, compared with a conventional transposition device having a plurality of transposition bumps, the transposition head 10 of this embodiment can achieve a good process yield and operating accuracy when applied to a large number of transposition processes. Further, in this embodiment, by adjusting the ratio of the distance A to the distance B, the transducing head 10 can obtain a lateral electric field uniformly distributed in the elastic body 140 under the driving of a low operating voltage, thereby improving the transducing head 10 Applicability, convenience and product competitiveness.

In addition, although FIG. 1 illustrates that the first electrode 110 and the second electrode 120 both have the apex, the present invention is not limited thereto. In other embodiments, only one of the first electrode 110 and the second electrode 120 may have an apex.

Based on the foregoing, it is known that by applying the first voltage V1 and the second voltage V2 to the first electrode 110 and the second electrode 120 and the ratio of the distance A to the distance B satisfies the following relationship: 1> A / B ≧ 0.1, the transpose head 10 Can effectively achieve the function of transposed micro-light-emitting diodes. Hereinafter, an embodiment of transposing the micro light-emitting diode using the transposition head 10 will be described in detail with reference to FIGS. 10A to 10C.

10A to 10C are schematic cross-sectional views of a method for transposing a micro light-emitting diode by using the transposition head of FIG. 1.

Referring to FIG. 10A, after the transposition surface 140a of the elastic body 140 of the transposition head 10 is brought into contact with the miniature light emitting diodes M1 and M2 arranged on the carrier substrate S1, the transposition head 10 is moved upward to make the transposition head 10 Pick-up miniature light-emitting diodes M1, M2. In this step, the positions of the micro-light-emitting diode M1 and the micro-light-emitting diode M2 are respectively corresponding to adjacent first electrodes 110 and second electrodes 120. The carrier substrate S1 is, for example (but not limited to): a sapphire substrate (Sapphire base) or a silicon substrate (Silicon base). The micro-light-emitting diodes M1 and M2 are, for example, flip-chip micro-light-emitting diodes, vertical micro-light-emitting diodes, or organic micro-light-emitting diodes.

Next, referring to FIG. 10B, after the transducing head 10 places the micro light-emitting diodes M1 and M2 on the receiving substrate S2, a first voltage V1 and a second voltage V2 are applied to the first electrode 110 and the second electrode 120, respectively. So that a lateral electric field X is generated between the first electrode 110 and the second electrode 120. At this time, the transposed surface 140a corresponding to the first electrode 110 and the second electrode 120 is rugged due to the action of the lateral electric field X by the elastic body 140, thereby making the miniature light emitting diodes M1 and M2 naturally self-elastic. The body 140 is detached.

Next, referring to FIG. 10C, the transducing head 10 is moved upward and stops applying voltage to the first electrode 110 and the second electrode 120 to complete transposing the micro-light emitting diodes M1 and M2.

In the embodiment of FIGS. 10A to 10C, the micro-light-emitting diode M1 and the micro-light-emitting diode M2 respectively correspond to two adjacent electrodes (that is, a first electrode 110 and a second electrode 120). However, the present invention is not limited to this. In other embodiments, according to the size of the micro-light-emitting diode to be transposed, one micro-light-emitting diode may also correspond to a plurality of first electrodes 110 and a plurality of second electrodes 120 adjacent to each other.

In addition, although not shown in FIG. 9A to FIG. 9C, those with ordinary knowledge in the technical field should understand that when the micro-light-emitting diode is transposed using the transposition head 10, the transposition head 10 Will be assembled on the carrier of the transpose device. Hereinafter, the transposition device will be described with reference to FIG. 11.

11 is a schematic cross-sectional view of a transposing device according to an embodiment of the present invention. It is worth noting that, in order to clearly explain the configuration manner of the transposition head 10 in the transposition device 200, the components covered by the elastic body 140, such as the first electrode 110, the second electrode 120, and the driver, are omitted in FIG. For the detailed structure of the circuit 130 and the transposition head 10 and related descriptions, please refer to the embodiments of FIG. 1 and FIG. 2.

Referring to FIG. 11, the transposition device 200 includes a carrier 210 for carrying the transposition head 10 and electrically connected to the transposition head 10. In detail, in the transposition head 10, the edge of the substrate 100 may protrude from the edge of the elastic body 140, thereby preventing the carrier 210 from damaging the elastic body 140 when assembling the transposition head 10 and the carrier 210; or In the transposition process, the carrier 210 is prevented from affecting the transposition effect of the transposition head 10.

In this embodiment, the transposition head 10 includes a contact C1, the carrier 210 includes a contact C2, and the transposition head 10 and the carrier 210 are electrically connected through contact between the contact C1 and the contact C2. That is, in the embodiment, the driving circuit 130 includes a contact C1.

In addition, although FIG. 11 illustrates that the transposition head 10 includes a contact C1 and the carrier 210 includes a contact C2, the present invention is not limited thereto. In other embodiments, the number and position of the contacts provided by the transposition device 200 can be adjusted according to the needs and conditions of the actual transposition process. For example, in one embodiment, the driving circuit 130 of the transpose head 10 may include more than two contacts C1, and the carrier 210 may also include more than two contacts C2 accordingly.

In the embodiments of FIGS. 1 and 2, the transposing head 10 includes a first electrode 110 and a second electrode 120 configured to configure a first voltage V1 and a second voltage V2 respectively, but the present invention is not limited thereto. In other embodiments, according to the actual needs and conditions of the transposition process, the transposition head 10 may also include a third electrode configured to configure a third voltage different from the first voltage V1 and the second voltage V2.

Hereinafter, another embodiment will be described with reference to FIG. 12. It must be noted here that the following embodiments inherit the component symbols and parts of the foregoing embodiments, in which the same or similar symbols are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeatedly described.

FIG. 12 is a schematic top view of a transposition head according to another embodiment of the present invention. Please refer to FIG. 12 and FIG. 2 at the same time. The transposition head 30 of FIG. 12 is similar to the transposition head 10 of FIG. 2, so only the main differences between them will be described below.

Referring to FIG. 12, in addition to the first electrode 110 for configuring a first voltage V1 and the second electrode 120 for configuring a second voltage V2, the transpose head 30 further includes a third electrode 310. In this embodiment, the third electrode 310 is used to configure a third voltage V3, wherein there is a voltage difference between the third voltage V3 and the second voltage V2, and the third voltage V3 is different from the first voltage V1 and the second voltage V2 . That is, the first electrode 110, the second electrode 120, and the third electrode 310 are electrically connected to different voltage sources. In one embodiment, the third voltage V3 is greater than the second voltage V2, the first voltage V1 is greater than the second voltage V2, and the third voltage V3 is greater than the first voltage V1. Further, since there is a voltage difference between the first voltage V1 and the second voltage V2 and a voltage difference between the third voltage V3 and the second voltage V2, when the first electrode 110 is applied with the first voltage V1 and the second electrode When a second voltage V2 is applied to 120 and a third voltage V3 is applied to the third electrode 310, a lateral electric field is formed between the first electrode 110 and the second electrode 120, and a lateral direction is formed between the second electrode 120 and the third electrode 310. electric field.

In addition, in this embodiment, the driving circuit 130 is electrically connected to the third electrode 310 in addition to being electrically connected to the first electrode 110 and the second electrode 120 to apply a third voltage V3 to the third electrode 310.

In the aforementioned transpose heads 10 and 30, the driving circuit 130 is a passive driving circuit, but the present invention is not limited thereto. In other embodiments, the driving circuit in the transposed head may be an active driving circuit.

Hereinafter, other embodiments will be described with reference to FIGS. 13 and 14. It must be noted here that the following embodiments inherit the component symbols and parts of the foregoing embodiments, in which the same or similar symbols are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeatedly described.

13 is a schematic cross-sectional view of a transposing head according to another embodiment of the present invention. FIG. 14 is a schematic top view of the transpose head of FIG. 13. The cross-sectional position of FIG. 13 may correspond to the position of the cross-sectional line I-I 'of FIG. 14. The transposition head 40 of FIGS. 13 and 14 is similar to the transposition head 10 of FIG. 1 and FIG. 2 described above, so only the main differences between them will be described below.

Please refer to FIG. 13 and FIG. 14 at the same time. The driving circuit 410 included in the transposition head 40 is disposed on the substrate 100 and is electrically connected to the first electrode 110 and the second electrode 120 to transmit external signals (such as the first voltage V1). The second voltage V2) is electrically connected to the first electrode 110 and the second electrode 120.

As shown in FIG. 14, in this embodiment, the driving circuit 410 may include a scan line SL, a data line DL, a common line CL, and a transistor T, where the transistor T is electrically connected to the scan line SL, the data line DL, and the first transistor. An electrode 110 is used as a switching element, and a common line CL is electrically connected to the second electrode 120 to provide a second voltage V2. That is, in the present embodiment, the driving circuit 410 is, for example, an active element array layer, which may be any type of active element array layer for display devices known to those having ordinary knowledge in the art. In detail, in this embodiment, the transistor T is, for example, a top or bottom gate type thin film transistor, which may include a gate, a channel layer, a source, and a drain. In addition, in this embodiment, the extending direction of the scanning lines SL and the data lines DL are different, and the scanning lines SL and the data lines DL may be located in different film layers. Of course, the driving circuit 410 is not limited to those depicted in FIG. 12. Any person with ordinary knowledge in the art should understand that the driving circuit 410 may further include components such as capacitors, connection pads, signal lines, and insulation layers. From another perspective, in the present embodiment, the driving circuit 410 is an active driving circuit.

In addition, since the driving circuit 410 may be any type of active element array layer for display devices known to those having ordinary knowledge in the art, and the first electrode 110 and the second electrode 120 are substantially disposed on the same plane, Therefore, the transposition head 40 has a design similar to In-Plane Switching (IPS), thereby making the fabrication of the transposition head 40 compatible with the manufacturing process of the existing display device.

It is worth noting that based on the embodiments of FIG. 1 and FIG. 2, since the transposed surface 140 a does not need to be provided with any patterned structure, compared with a conventional transposed device having a plurality of transposed bumps, The transposition head 40 can achieve good process yield and operation accuracy when applied to a large number of transposition processes.

Further, based on the embodiments of FIGS. 1 and 2, it can be seen that the distance A between the apex T of the first electrode 110 and the second electrode 120 and the top surface S of the substrate 100 and the transposed surface 140 a and the top surface of the substrate 100 are transmitted. The distance B between S satisfies the following relationship: 1> A / B ≧ 0.1. When the transducing head 40 is used to transpose the micro light emitting diode, the transducing head 40 can be driven at a low operating voltage, that is, at the first A transverse electric field uniformly distributed in the elastic body 140 is obtained between the one electrode 110 and the second electrode 120. In this way, the elastic body 140 will cause the corresponding transposed surface 140a to be uneven due to the effect of the transverse electric field, so that the micro-light-emitting diodes adhered to the transposed surface 140a will be detached from the elastic body 140. This can not only effectively achieve the transposition function, but also improve the applicability, convenience and product competitiveness of the transposition head 40.

In addition, since the driving circuit 410 is an active driving circuit having a transistor T as a switching element, it can be known based on the contents of FIGS. 10A to 10C that the transposition head 40 can be selectively transposed through the control of the transistor T. One of the micro light emitting diode M1 and the micro light emitting diode M2 is shown in FIG. 15. That is, when the micro light emitting diode is transposed using the transposition head 40 including the active driving circuit 410, a specific micro light emitting diode is selectively transposed.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

10, 30, 40‧‧‧ transposed head

100‧‧‧ substrate

110‧‧‧first electrode

120‧‧‧Second electrode

130, 410‧‧‧ drive circuit

140‧‧‧ elastomer

140a‧‧‧ transposed surface

200‧‧‧ transpose device

210‧‧‧ Carrier

A, B‧‧‧ distance

C1, C2‧‧‧ contact

CL‧‧‧ Common Line

DL‧‧‧Data Line

E1‧‧‧First electrode structure

E2‧‧‧Second electrode structure

E1a, E2a‧‧‧Top surface of electrode structure

E1b, E2b‧‧‧ electrode bottom surface

M1, M2‧‧‧‧Mini Light Emitting Diodes

P1‧‧‧First bump

P2‧‧‧Second bump

S1‧‧‧bearing substrate

S2‧‧‧Receiving substrate

SL‧‧‧scan line

T‧‧‧Transistor

V1‧‧‧ the first voltage

V2‧‧‧Second voltage

X‧‧‧ transverse electric field

FIG. 1 is a schematic cross-sectional view of a transposition head according to an embodiment of the present invention. FIG. 2 is a schematic top view of the transpose head of FIG. 1. FIG. 3A, FIG. 3B, FIG. 3C, and FIG. 3D are schematic top views of modified embodiments of the electrodes, respectively. 4A, 4B, and 4C are schematic cross-sectional views of modified embodiments of the electrode structure, respectively. 5A and 5B are schematic cross-sectional views of modified embodiments of the electrode structure, respectively. 6A and 6B are schematic top views of a modified embodiment of a driving circuit, respectively. FIG. 7 is a simulation relationship diagram of the ratio of the operating voltage of the transposed head of FIG. 1 to the area of the top surface of the electrode structure and the area of the bottom surface of the electrode structure. FIG. 8 is a simulation relationship diagram of the ratio of the operating voltage to the distance A and the distance B of the transpose head of FIG. 1. FIG. 9 is a simulation relationship diagram of the transmittance of the transposed head of FIG. 1 with respect to the ratio of the distance A to the distance B. FIG. 10A to 10C are schematic cross-sectional views of a method for transposing a micro light-emitting diode by using the transposition head of FIG. 1. 11 is a schematic cross-sectional view of a transposing device according to an embodiment of the present invention. FIG. 12 is a schematic top view of a transposition head according to another embodiment of the present invention. 13 is a schematic cross-sectional view of a transposing head according to another embodiment of the present invention. FIG. 14 is a schematic top view of the transpose head of FIG. 13. FIG. 15 is a schematic cross-sectional view of one stage of a method of transposing a micro light emitting diode using the transposition head of FIG. 13.

Claims (9)

A transposition head includes: a substrate having a top surface; a first electrode disposed on the substrate; a second electrode disposed on the substrate and separated from the first electrode structure; a first protrusion A block is disposed on the substrate; a second bump is disposed on the substrate and separated from the first bump, wherein the first electrode covers at least a top surface of the first bump, and the second electrode is at least Covering a top surface of the second bump; a driving circuit disposed on the substrate and electrically connected to the first electrode and the second electrode; and an elastomer disposed on the substrate and covering the first electrode And the second electrode, wherein at least one of the first electrode and the second electrode has a vertex, a distance between the vertex and the top surface of the substrate is A, and the elastic body has a transposition Surface, the distance between the transposed surface and the top surface of the substrate is B, and 1> A / B ≧ 0.1. The transpose head according to item 1 of the scope of patent application, wherein the first electrode is used to configure a first voltage, the second electrode is used to configure a second voltage, between the first voltage and the second voltage With voltage difference. The transpose head according to item 1 of the scope of patent application, wherein the driving circuit is an active driving circuit or a passive driving circuit. According to the transposition head described in item 1 of the patent application scope, wherein the first electrode further covers a side surface of the first bump, and the second electrode further covers a side surface of the second bump. The transpose head according to item 4 of the scope of patent application, wherein the first electrode and the first bump constitute a first electrode structure, the second electrode and the second bump constitute a second electrode structure, and At least one of the first electrode structure and the second electrode structure has a top surface of the electrode structure and a bottom surface of the electrode structure, wherein a ratio of an area of the top surface of the electrode structure to an area of the bottom surface of the electrode structure. More than 0.6. The transpose head according to item 1 of the scope of patent application, wherein the shape of the first electrode and the second electrode includes a strip shape, a zigzag shape, a wavy strip shape, or a ladder shape. The transpose head according to item 1 of the patent application scope, wherein an edge of the substrate protrudes from an edge of the elastic body. A transposition device includes: the transposition head according to any one of claims 1 to 7 in the scope of patent application; and a carrier for carrying the transposition head and being electrically connected to the transposition head. . The transposition device according to item 8 of the scope of patent application, wherein the transposition head includes a first contact, the carrier includes a second contact, and the first contact is in contact with the second contact to The carrier is electrically connected to the transposition head.