TWI653122B - Method and system for real-time polishing recipe control - Google Patents

Abstract

This document provides systems and methods for controlling an instant polishing process. The first characteristic and the second characteristic are respectively identified in the first data set and the second data set, and each data set corresponds to an instant wafer polishing data. A time increment between the time at which the first characteristic and the second characteristic appear within each of the data sets is calculated, and then the polishing parameter is updated on the basis of the calculated time increment.

Description

Method and system for instant polishing recipe control [Reciprocal Reference of Related Applications]

The present application claims priority to U.S. Provisional Patent Application No. 62/008,300, filed on Jun. 5, 2014, which is hereby incorporated by reference.

Embodiments of the present disclosure relate to chemical mechanical polishing and, more particularly, to parameters that control immediate chemical mechanical polishing.

Chemical mechanical polishing (CMP) is a process used in the semiconductor industry to smooth the surface of a wafer by using a combination of chemical etching and mechanical force. The wafer is placed on a rotating platform and the wafer is held in place by the retaining ring as the polishing head contacts the wafer. The material is removed from the surface of the wafer to create a flat surface. The removal rate can vary with the pressure applied between the wafer and the polishing head.

In many cases, different regions of the wafer can be polished at different rates (eg, wafer edges can be polished faster than the wafer center). Although polishing formulations can be developed and calibrated to compensate for different polishing rates in the wafer set, they can still crystallize due to surface irregularities. Inconsistent polishing between the circle and the wafer, even if a previous calibration has been made.

A method comprising: identifying a first characteristic occurring at a first time point in a first data set corresponding to a first series of measurements of a first region on a wafer, wherein the first data set is on a wafer The first region on the first surface is polished according to the first polishing parameter value; in the second data set corresponding to the second series of measurement results of the second region on the wafer, the second occurs at the second time point a characteristic, wherein the second data set is generated immediately when the second region on the wafer is polished according to the second polishing parameter value; calculating a time increment, wherein the time increment is between the first time point and the second time point a difference; and updating at least one of the first polishing parameter value or the second polishing parameter value based on the time increment.

A method for providing coexistence between a first wireless protocol and a second wireless protocol, comprising: receiving, by using a first transceiver, an allocation of network resources, the first transceiver configured to use a first wireless protocol And intermodulating distortion (IMD) prediction for the upcoming transmission at the first transceiver, based at least in part on at least one characteristic determined from the network resource allocation; and at the first receiver When the received quality is below a desired threshold, the transmit power of the second transceiver is selectively reduced based at least in part on the predicted IMD, the second transceiver being configured to operate using the second wireless protocol.

A non-transitory processor readable storage medium for providing coexistence between a first wireless protocol and a second wireless protocol in a wireless communication device, the processor readable storage medium having instructions, the instructions When executed by the processor, causing the wireless communication device to receive an allocation of network resources using the first transceiver, the first transceiver configured to operate using the first wireless protocol; based at least in part on the self-network resource allocation Determining at least one characteristic for intermodulation distortion (IMD) prediction for the upcoming transmission at the first transceiver; and at least when the reception quality at the first receiver is below a desired threshold The transmit power of the second transceiver is selectively reduced based in part on the predicted IMD, the second transceiver being configured to operate using the second wireless protocol.

100‧‧‧ Manufacturing System

110‧‧‧ Manufacturing Execution System

120‧‧‧Chemical mechanical grinding system

122‧‧‧ polishing parameters

130‧‧‧In-situ rate monitoring system

140‧‧‧Network

200‧‧‧ feedback module

202‧‧‧Analysis submodule

204‧‧‧CMP Control Submodule

206‧‧‧User interface sub-module

210‧‧‧ Polishing unit

220‧‧‧User interface

250‧‧‧Data storage

252‧‧‧ Section archives

254‧‧‧ lookup table

260‧‧‧ wafer

262‧‧‧Central area

264‧‧‧Intermediate area

Edge of 266‧‧

300‧‧‧ drawing

302‧‧‧ Curve

304‧‧‧ Curve

306‧‧‧ Curve

308‧‧‧ time point

310‧‧‧Information points

312‧‧‧Information points

314‧‧‧Information points

316‧‧‧ time

318‧‧‧Information points

320‧‧‧Information points

322‧‧‧ time point

324‧‧‧Information points

326‧‧‧ time point

328‧‧‧Information points

330‧‧‧ time point

332‧‧‧Information points

334‧‧‧ time point

336‧‧‧Information points

340‧‧‧ Time increment

342‧‧‧ time increment

344‧‧‧ Time increment

400‧‧‧ method

410‧‧‧Steps

420‧‧ steps

430‧‧ steps

440‧‧‧Steps

500‧‧‧ method

510‧‧ steps

520‧‧‧Steps

530‧‧‧Steps

540‧‧‧Steps

550‧‧ steps

570‧‧‧Steps

600‧‧‧ Computing device

602‧‧‧Processing device

604‧‧‧ main memory

606‧‧‧ Static memory

608‧‧‧Network interface device

610‧‧‧Video display unit

612‧‧‧Text input device

614‧‧‧ cursor control device

616‧‧‧Signal generator

618‧‧‧ data storage device

620‧‧‧Network

622‧‧‧ directive

628‧‧‧Computer readable storage media

630‧‧ ‧ busbar

The present invention is illustrated by way of example, and not in the It should be noted that the different references to the "an" or "one" embodiment of the present disclosure are not necessarily to the same implementation, and the reference is intended to mean at least one.

1 is a block diagram illustrating chemical mechanical polishing according to one embodiment; FIG. 2A is a block diagram of one embodiment of a feedback module according to an embodiment; FIG. 2B illustrates a chemical according to an embodiment Different areas of the wafer are monitored during mechanical polishing; FIG. 3 is a drawing illustrating data obtained from monitoring different regions of the wafer according to one embodiment; and FIG. 4 illustrates updating the instant polishing process embodiment of the method of the parameter; embodiment of the method of FIG. 5 illustrates the parameters for the continuous real time updating of the polishing process; and FIG. 6 is a block diagram illustrating an exemplary computing device.

Embodiments of the present disclosure are directed to methods and systems for controlling instant wafer polishing formulations. The in-situ rate monitoring system monitors the material removal rate instantaneously during the polishing process performed by the CMP system. Since the wafer is polished, the measurement data (referred to as "segment file") measured by the in-situ rate monitoring system in different areas of the wafer may include discernible characteristics that occur at different points in time and depend on the thickness. The CMP system compares data from different sector files to determine one or more time increments between when such characteristics occur in time. Based on the time increments, the CMP system thereby recognizes the updated polishing parameters (eg, based on a lookup table) and instantly updates its polishing recipe to compensate for any polishing rate differences at different regions in the wafer.

1 is a block diagram illustrating a manufacturing system 100 that includes a manufacturing system data source (eg, a manufacturing execution system (MES) 110), a chemical mechanical polishing (CMP) system 120, and In situ rate monitoring (ISRM) system 130, each system/server is configured to communicate with each other, for example, via network 140. The network 140 can be a local area network (LAN), a wireless network, a mobile communication network, a wide area network (WAN), such as the Internet, or the like.

The MES 110, the CMP system 120, the ISRM system 130, and the feedback module 200 can be hosted by any type of computing device, including a server computer, a gateway computer, a desktop computer, a laptop computer, and a tablet computer. , a notebook computer, a personal digital assistant (PDA), a mobile communication device, a cellular phone, a smart phone, a handheld computer, or the like. Alternatively, any combination of MES 110, CMP system 120, ISRM system 130, and feedback module 200 can be hosted on a single computing device, including a server computer, a gateway computer, a desktop computer, a laptop Computer, mobile communication device, cellular phone, smart phone, handheld computer, or similar computing device.

The ISRM system 130 can collect and analyze information about the CMP system 120. In one embodiment, the ISRM system 130 is coupled to a factory system data source (eg, MES 110, ERP) to receive scheduling data and device (eg, chamber) data, etc. Wait. In one embodiment, the ISRM system 130 may retrieve data measurement data during a wafer polishing process performed by the CMP system 120. The CMP system 120 can include a feedback module 200 that receives measurement data from the ISRM system 130 and processes the data to update the polishing parameters 122 used by the CMP system 120 in the wafer polishing process. For example, the feedback module 200 can analyze the real-time wafer polishing data to determine whether different regions of the wafer are being polished by the CMP system at different rates, and to update the polishing parameters/settings of the CMP system 120, and the CMP system 120 then adjusts differently. The polishing rate of the area.

2A is a block diagram of one embodiment of a feedback module 200 in accordance with one embodiment. In one embodiment, the feedback module 200 can be the same as the feedback module 200 of FIG . The feedback module can be implemented on the CMP system 120, and the feedback module can include an analysis sub-module 202, a CMP control sub-module 204, and a user interface (UI) sub-module 206.

The feedback module 200 can be coupled to the data storage 250. The data store 250 can be a persistent storage unit, which can be a local storage unit or a remote storage unit. The persistent storage unit can be a magnetic storage unit, an optical storage unit, a solid state storage unit, an electronic storage unit (primary memory) or the like. The persistent storage unit can also be a single device or a distributed device group. As used in this case, "group" means any positive integer number of items. In some embodiments, the data store 250 can be any available over the network 140. The device is maintained. For example, data store 250 can be maintained on a server computer, a gateway computer, a desktop computer, a laptop computer, a mobile communication device, a cellular telephone, a smart phone, a handheld computer, or the like.

The data store 250 can store the section archive 252, the lookup table 254, and the polishing parameters 122. The section archive 252 can include section archives containing measurement data obtained from different regions of the wafer during the chemical mechanical polishing process. For example, the first segment file may correspond to the reflectance versus time data observed at the edge of the wafer, and the second segment file may correspond to the reflectance versus time data observed in the center region of the wafer. In some embodiments, the section archive 252 is received from the ISRM system 130. For example, when the section archive 252 flows from the ISRM system 130, the analysis sub-module 202 immediately receives and stores the section archive 252. The lookup table 254 can include tabular polishing parameters including, but not limited to, film pressure, tube pressure, and collar pressure. The table polishing parameters can be used to correct the offset of the pressure applied by the CMP system polishing head to different regions of the wafer. For example, the CMP control sub-module 204 can retrieve updated polishing parameters from the lookup table 254 and dynamically update the polishing recipe (eg, by controlling one or more pressures applied to the wafer by the polishing unit 210).

In one embodiment, a user interface (UI) sub-module 206 may be present in the user interface 220, the user interface 220 being displayed by the CMP system 120. One or more of the section profile 252, lookup table 254 parameters, or polishing parameters 222. User interface 220 can be a graphical user interface (GUI) implemented on any suitable device. In one embodiment, if the GUI is implemented on a CMP system, the GUI can display lookup table parameters 254 (eg, by using user interface 220). The GUI can also be implemented on a device other than the CMP system 120. In one embodiment, the GUI may display the section archive 252 if the GUI is implemented on the ISRM system 130.

Figure 2B illustrates monitoring different regions of the wafer during chemical mechanical polishing, according to one embodiment. The ISRM system 130 can be configured to perform measurements on the wafer 260 during the polishing process. In one embodiment, wafer 260 includes an optically clear film disposed thereon. The CMP system 120 polishes the wafer 260, which reduces the thickness of the optically clear film. The ISRM system 130 may collect measurement data in the form of a section file corresponding to the central area 262, the intermediate area 264, and the edge 266, respectively. The collected data can be analyzed by the analysis sub-module 202 in real time.

Figure 3 is a drawing 300 illustrating information obtained from monitoring different regions of a wafer in accordance with one embodiment. In one embodiment, the drawing 300 can be displayed for display in a GUI (eg, displayed on the UI 220) that can be updated on-the-fly as the CMP system receives the material. Plot 300 represents segment archives corresponding to immediate measurements taken over multiple regions of the wafer during the CMP process. The horizontal axis corresponds to the flattening time (the unit is seconds), and the flattening time corresponds to one time during the CMP process. The vertical axis corresponds to the intensity of the reflection (arbitrary units). The ISRM system (e.g., ISRM system 130) can monitor the intensity of the reflection at different regions of the wafer. In some embodiments, different types of processing data can be displayed in plot 300.

The feedback module 200 can use the data depicted in the drawing 300 to instantly update the parameters of the CMP process. Curves 302, 304, 306 correspond to section archives that are monitored immediately during the CMP process. For example, curve 302 may correspond to data obtained at a wafer center (eg, central region 262), curve 304 may correspond to data obtained at a wafer intermediate segment (eg, intermediate region 264), and curve 306 may correspond to Information obtained from a rounded edge (eg, edge region 266). In one embodiment, curves 302, 304, 306 are drawn as smooth curves. In one embodiment, curves 302, 304, 306 are drawn as a single data point.

The shape of each of the curves 302, 304, 306 is generated based on a measurement of the reflectance of one or more films disposed on the wafer, the shapes exhibiting characteristics depending on the thickness of the film (eg, local minimum values) And local maxima). During the CMP process, the film thickness decreases over time as the film is polished. Although the individual data points of curves 302, 304, 306 are synchronized with time, the characteristics of each of curves 302, 304, 306 may occur at different points in time due to different flattening rates (eg, The pressure applied by the polishing head to the edge of the wafer may be greater than the pressure applied by the polishing head to the center of the wafer such that the film thickness reduction rate at the edge is greater than the film thickness reduction rate at the center).

Curve 302 may correspond to a wafer edge, curve 304 may correspond to a wafer middle segment, and curve 306 may correspond to a wafer center. Curve 302 has a first local maximum that occurs at data point 310, which appears at time point 308 (about 26 seconds after the start of the CMP process). Similarly, data point 312 (corresponding to the local maximum of curve 304) and data point 314 (corresponding to the local maximum of curve 306) also appear at time point 308. In one embodiment, the curve 302 (wafer edge curve) can be selected as a reference curve for which the analysis sub-module 202 calculates the time increment of the data points 312, 314 relative to the data point 310 (eg, data point 310). The time increment between the data points 312 and the data points 312 will be the difference between the time of occurrence of each data point in the data points). As depicted in plot 300, each of data points 310, 312, 314 coincides with time point 308. Therefore, the time increment between data point 310 and data point 312 will be zero, and the time increment between data point 310 and data point 314 will also be zero, indicating each of the three regions of the wafer. An area is being polished at the same rate. In one embodiment, the analysis sub-module 202 does not take action, and the analysis sub-module 202 continues to receive the section archives until new features are identified.

As the CMP process continues, data points 318, 320, 324 are identified. Each of the data points 318, 320, 324 corresponds to a local minimum of the curves 302, 304, 306, respectively. Two data points 318, 320 appear at the same time point 316, while data points 324 appear at time point 322. The analysis sub-module 202 can calculate the time increment between the data points 318, 320 to be zero. The analysis sub-module 202 can calculate a time increment 340 between time point 316 and time point 322 (Δ t ₁ = t _edge - t _center ). As depicted in plot 300, time increment 340 is -1 second. This hysteresis indicates that the polishing rate corresponding to curve 306 is less than the polishing rate corresponding to curve 302 (i.e., the wafer edge polishing rate is faster than the wafer center polishing rate). Accordingly, analysis sub-module 202 can use the value of time increment 340 to identify updated parameters from lookup table 254. For example, the lookup table 254 can be retrieved based on the time increment value, and the analysis sub-module 202 can identify an update pressure parameter (eg, rim pressure) corresponding to -1 second from the lookup table 254. Once the updated pressure parameters are identified, the CMP control sub-module 204 can transmit the updated pressure parameters to the polishing unit 210 (eg, the polishing head), which then dynamically updates the pressure applied to the wafer edge (eg, updated) The pressure parameter is positive so that the polishing pressure applied to the edge of the wafer is increased to compensate for the observed hysteresis in the segment archive. In one embodiment, the analysis sub-module 202 may not operate with respect to the measured non-zero time increment 340, but may store and flag the time increment 340. If additional non-zero time increments are observed, the analysis sub-module 202 can take action later.

As the CMP process continues, data points 328, 332, 336 are identified. Each of the data points 328, 332, 336 corresponds to a local maximum of the curves 302, 304, 306, respectively. Data point 328 appears at time point 326, data point 332 appears at time point 330, and data point 336 appears at time point 334. The analysis sub-module 202 can calculate a time increment 342 between time point 326 and time point 330 (Δ t ₂ = t _edge - t _intermediate ), which will be equal to -1, as depicted in plot 300 . This hysteresis indicates that the polishing rate corresponding to curve 304 is less than the polishing rate corresponding to curve 302 (i.e., the wafer center polishing rate is faster than the wafer edge polishing rate). Similarly, analysis sub-module 202 can calculate a time increment 344 (Δ t ₃ = t _edge - t _center ) between time point 326 and time point 334, which time increment 344 would be equal to -3, as in plot 300. Painted. This hysteresis indicates that the polishing rate corresponding to curve 306 is lower than the polishing rate corresponding to curve 302 (i.e., the wafer center polishing rate is faster than the wafer intermediate segment polishing rate). The analysis sub-module 202 can use the values of the time increments 342, 344 to identify the update parameters from the lookup table 254, and the CMP control sub-module 204 can transmit the update parameters to the polishing unit 210 to dynamically update the intermediate section of the wafer. Polished with the edge of the wafer.

Below with respect to FIG 4 and FIG 5 and described in more detail for the instant embodiment of the control of the CMP process. It should be understood that the shape of the curves, the points of the data, and the time are only for the purpose of illustrating the embodiments of the present disclosure, and that other embodiments may have other curved shapes, data points, and times. In other embodiments, the data may be processed in a similar manner by using any suitable method to identify and compare the characteristics of the instant data.

Figure 4 illustrates an embodiment of a method 400 for updating parameters of an instant polishing process. Method 400 can be performed by processing logic including hardware (eg, circuitry, dedicated logic, programmable logic, microcode, etc.), software (eg, instructions executed on a processing device), or a combination of the above. In one embodiment, method 400 is performed by a CMP system (eg, feedback module 200 in ISRM system 130 described in FIG. 1 ), as described below. However, it should be noted that any suitable computing device described herein can perform method 400, and the CMP system is merely an illustrative example.

At block 410, a feedback module (eg, feedback module 200) identifies a first characteristic corresponding to a first time point within the first data set, the first data set corresponding to the first series of measurement results, the first series The measurement results are instantaneously generated during polishing of the first region on the wafer in accordance with the first polishing parameter. In one embodiment, the first data set corresponds to a sector file of the first region of the wafer while the wafer is undergoing a polishing process performed by a CMP system (eg, CMP system 120). The first region of the wafer can be, for example, a wafer edge, a wafer center, or a wafer intermediate segment. The first data set (segment file) can be instantly monitored and stored in a memory (e.g., data store 250) by an ISRM system (e.g., ISRM system 130). In one embodiment, the first data set may correspond to data of reflection intensity versus time, wherein the light passing through the optically transparent film is reversed The intensity of the shot is measured by a reflectometer from a CMP system or an ISRM system. The intensity of the reflection changes as the thickness of the film is reduced by the polishing process, resulting in local minima and local maxima in the first data set. In some embodiments, other types of measurement/characterization techniques can be used to obtain different types of polishing data, such as refractive index measurements.

At block 420, the feedback module identifies a second characteristic corresponding to a second time point within the second data set, the second data set corresponding to polishing the second region on the wafer according to the second polishing parameter The second series of measurements produced in real time. Block 420 may be performed for the second data set in a manner substantially similar to block 410. The second region of the wafer can be, for example, a wafer edge, a wafer center, or a wafer intermediate segment, and is an area different from the first region of the wafer.

At block 430, the feedback module calculates a time increment equal to the difference between the first time point and the second time point. In one embodiment, the first characteristic and the second characteristic are similar characteristics (e.g., both are local maxima) that occur at similar times (e.g., within about 10 seconds). At block 440, the feedback module updates (eg, by using the CMP control sub-module 204) at least one of the first polishing parameter or the second polishing parameter based on the calculated time increment. In some embodiments, block 440 may be ignored if the feedback module determines that the time increment is equal to zero.

Figure 5 illustrates an embodiment of a method 500 for continuously updating parameters of an instant polishing process. Method 500 can be performed by processing logic including hardware (eg, circuitry, dedicated logic, programmable logic, microcode, etc.), software (eg, instructions executed on a processing device), or a combination of the foregoing. In one embodiment, method 500 is performed by a CMP system (eg, for feedback module 200 in ISRM system 130 described in FIG. 1 ), as described below. However, it should be noted that any suitable computing device described herein can perform method 500, and the CMP system is merely an illustrative example.

At block 510, the feedback module (eg, the feedback module 200) identifies a first characteristic corresponding to the first time point within the first data set, the first data set corresponding to the first series of measurement results, the first The series of measurements are generated instantaneously during polishing of the first region on the wafer in accordance with the first polishing parameter. Block 510 can be the same or similar to block 410 described with respect to FIG .

At block 520, the feedback module (eg, the feedback module 200) identifies a first characteristic corresponding to the first time point within the first data set, the first data set corresponding to the first series of measurement results, the first The series of measurements are generated instantaneously during polishing of the first region on the wafer in accordance with the first polishing parameter. Block 520 may be the same or similar to block 420 described with respect to FIG .

At block 530, the feedback module calculates a time increment equal to the difference between the first time point and the second time point (eg, subtracting the second time point from the first time point). Block 530 can be the same or similar to block 430 described with respect to FIG .

At block 540, the feedback module determines if the calculated time increment is equal to zero. If the calculated time increment is not equal to zero, then method 500 proceeds to block 550. At block 550, the feedback module updates at least one of the first polishing parameter or the second polishing parameter based on the calculated increment. In one embodiment, new parameter values may be identified within a lookup table (eg, lookup table 254). The new parameter value can be assigned to at least one of the first or second polishing parameters, such as by replacing the stored polishing parameter with a new parameter (eg, storing the new parameter value in the data store 250 to replace the old parameter value) . In one embodiment, the feedback module can update the first and/or second polishing parameters by transmitting the updated parameters to a polishing unit (eg, polishing unit 210), which then adjusts the polishing settings (eg, applied to the crystal) Pressure in multiple areas of the circle).

In one embodiment, the feedback module can determine that the time increment is negative (eg, the second time point occurs later than the first time point). Subsequently, the feedback module can increase the second polishing parameter to compensate for the difference between the first time value and the second time value (eg, by increasing the polishing pressure applied to the region corresponding to the second data set). In one embodiment, the feedback module can determine that the time increment is positive (eg, the first time point occurs later than the second time point). Subsequently, the reverse reading module can reduce the second polishing parameter to compensate for the difference between the first time value and the second time value (eg, by reducing the application to the corresponding The polishing pressure of the area of the second data set). In some embodiments, if the absolute value of the time increment exceeds a non-zero threshold, method 500 can proceed to block 550. In some embodiments, method 500 may not proceed to block 550 unless it has been determined that the time increment has exceeded zero at least twice.

If at block 540, the calculated time increment is equal to zero, then method 500 proceeds to block 560. At block 560, the feedback module determines if the end of the polishing process is reached. For example, the CMP system may have been configured to perform a polishing process for a predetermined duration, and once a predetermined duration has elapsed, the feedback module may determine that the process is complete. If the feedback module determines that the endpoint has not been reached, then method 500 proceeds to block 570 where the feedback module continues to receive the monitored real-time polishing data (eg, polishing data received from the CMP system) until it is identifiable New features in the zone file (for example, local minima and local maxima), and new time increments between various time points of the new feature are calculated. If the feedback module determines that the end point has been reached, then method 500 ends.

600 of FIG. 6 is a block diagram illustrating an exemplary computing device. In one embodiment, the computing means 600 corresponding to the host machine and FIG. 2 of the drawing module 200 of the first feedback. Computing device 600 includes a set of instructions for causing a machine to perform any one or more of the methods discussed in this disclosure. In an alternative embodiment, the machine can be connected (e.g., networked) to a local area network (LAN), an internal network, an external network, or other machine in the Internet. The machine can operate in the capacity of the server machine in a master-slave network environment. The machine can be a personal computer (PC), a set-top box (STB), a server, a network router, a switch or a bridge, or any capable instruction set (continuous or otherwise) The machine, the set of instructions specifies the actions that the machine will take. Moreover, although only a single machine is illustrated, the term "machine" shall also be taken to include any collection of machines that individually or collectively execute one (or more) sets of instructions to perform any of the methods discussed herein. One or more.

The exemplary computing device 600 includes a processing system (processing device) 602 that communicates with each other via a bus bar 630, a main memory 604 (eg, read-only memory (ROM), flash memory, such as synchronous dynamics). Random dynamic random access memory (SDRAM) dynamic random access memory (DRAM), static memory 606 (eg, flash memory, static random access memory) Static random access memory (SRAM), etc., and data storage device 618. Each of processing device 602, main memory 604, and data storage device 618 can store instructions 622 associated with feedback module 200.

Processing device 602 represents one or more general purpose processing devices such as a microprocessor, central processing unit, or the like. More specifically, the processing device 602 can be a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, or a very long instruction word (very long instruction). Word; VLIW) A microprocessor, or a processor that implements other instruction sets, or a processor that implements a combination of instruction sets. The processing device 602 can also be an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal processor (DSP), a network. One or more dedicated processing devices of a road processor, or the like. Processing device 602 is configured to execute feedback module 200 for performing the operations and steps discussed in this context.

Computing device 600 can further include a network interface device 608. The computing device 600 can also include a video display unit 610 (eg, a liquid crystal display (LCD) or a cathode ray tube (CRT)), an alphanumeric input device 612 (eg, a keyboard), and a cursor control device 614 ( For example, a mouse), and a signal generating device 616 (such as a speaker).

The data storage device 618 can include a computer readable storage medium 628 having stored thereon one or more sets of instructions (eg, instructions 622 for the feedback module 200) that implement the methods described herein or Any one or more of the functions. During execution of the feedback module 200 by the computing device 600, the feedback module 200 may also reside wholly or at least partially within the main memory 604 and/or the processing device 602, the main memory 604 and the processing device 602. It also constitutes computer readable media. The feedback module 200 can be further transmitted or received over the network 620, such as the network 140, via the network interface device 608.

Although computer readable storage medium 628 is illustrated as a single medium in an exemplary embodiment, the term "computer readable storage medium" shall be taken to include a single medium or more storing one or more instruction sets. Media (such as centralized or decentralized repositories, and/or associated caches and servers). The term "computer readable storage medium" shall also be taken to include any medium that is capable of storing, encoding, or carrying a set of instructions executed by a machine and causing the machine to perform one or more of the methods of the present disclosure. Methods. The term "computer readable storage medium" shall be taken to include, but is not limited to, temporary computer readable storage media and non-transitory computer readable storage media, including but not Limited to the transmission of electrical or electromagnetic signals, such non-transitory computer readable storage media include, but are not limited to, electrical and non-electrical computer memory or storage devices such as hard disks, solid state memories, optical media, Magnetic media, floppy disks, USB drives, DVDs, CDs, media cards, scratchpad memory, processor cache memory, random access memory (RAM), and more.

In the above description, numerous details are set forth. However, it will be apparent to those skilled in the art <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; In some instances, well-known structures and devices are illustrated in block diagram form and not in detail.

Some portions of the detailed description are presented in terms of algorithms and symbolic representations of operations performed on data bits in computer memory. The descriptions and representations of such algorithms are the most effective means by which those skilled in the data processing techniques can convey the substance of their work to others who are familiar with the technology. In the present case and in general, it is envisaged that the algorithm is a self-consistent sequence of steps that produce the desired result. These steps are steps that require entity manipulation of the number of entities. Usually, though not necessarily, the quantities are in the form of electrical or magnetic signals that can be stored, transferred, combined, compared, and otherwise. It has proven convenient at times, principally for reasons of common usage, to refer to such signals as bits, values, elements, symbols, characters, items, numbers, and so forth.

However, it should be borne in mind that all such and similar terms will be associated with the appropriate number of entities, and are only applied to the number of conveniences. Unless otherwise stated, as highlighted in the discussion above It will be understood that in the full text description, the use of terms such as "decision", "addition", "provide", etc., refers to the operation and processing of a computing device or similar electronic computing device that is The computing device registers and the memory are represented as physical (eg, electronic) quantities of data and are converted to other data that is also represented as a physical quantity in the computing device memory or scratchpad or other such information storage device. .

Embodiments of the present disclosure are also directed to apparatus for performing the operations in this disclosure. The device may be specifically constructed for its intended use, or the device may include a general purpose computer selectively activated or reconfigured by a computer program stored in the computer. The computer program can be stored in a computer readable storage medium such as, but not limited to, any type of disc (including optical discs, CD-ROMs, and magnetic discs), read-only memory (read- Only memory; ROM), random access memory (RAM), erasable programmable read only memory (EPROM), electronic erasable programmable read only memory (electrically erasable programmable read only memory; EEPROM), magnetic or optical card, or any type of media suitable for storing electronic instructions.

It will be understood that the above description is intended to be illustrative, and not restrictive. After reading and understanding the above description, many other implementations It will be obvious to those familiar with the technology. Therefore, the scope of the present disclosure should be determined by reference to the appended claims, and the scope of the claims.

Claims (14)

A method comprising the steps of: identifying a first characteristic occurring at a first time point in a first data set corresponding to one of a first series of measurements of a first region on a wafer, Wherein the first data set is generated immediately when the first region on the wafer is polished according to a first polishing parameter value; and the second series of measurements is performed on a second region corresponding to the wafer Identifying, in one of the second data sets, a second characteristic occurring at a second time point, wherein the second data set is when the second area on the wafer is polished according to a second polishing parameter value Instantly generating; calculating a time increment, wherein the time increment is a difference between the first time point and the second time point; and determining that the time increment is positive or negative, and responding to the determination And: if the time increment is positive, decreasing the second polishing parameter value based on the time increment to reduce a polishing pressure applied to the second region; or if the time increment is negative, based on the time Increase the second polishing parameter value by increment The increase in the polishing pressure applied to the second region. The method of claim 1, wherein the step of increasing or decreasing the second polishing parameter value comprises the steps of: Identifying a new parameter value from a lookup table by using the time increment; and assigning the new parameter value to the second polishing parameter value. The method of claim 1, wherein the first region on the wafer is a wafer edge, and wherein the second region on the wafer is a wafer center. The method of claim 1, wherein the first series of measurement results and the second series of measurement results are reflection coefficient measurement results, and the first data set and the second data set respectively correspond to the first reflection intensity comparison time The data set and the data set of the second reflection intensity versus time. The method of claim 1, wherein the first characteristic and the second characteristic are each a local minimum of the first data set and the second data set, or each of the first data set and the first The local maximum of the data set. The method of claim 1, wherein the step of increasing or decreasing the second polishing parameter value comprises the step of separately increasing or decreasing a pressure applied to the wafer by a polishing head. A system comprising: a memory; and a processing device coupled to the memory, wherein the processing device is configured to: Identifying, in a first data set stored in the memory and corresponding to one of the first series of measurements of a first region on a wafer, identifying a first characteristic occurring at a first time point, wherein the first characteristic occurs The first data set is generated immediately when the first region on the wafer is polished according to a first polishing parameter value; stored in the memory and corresponding to one of the second regions on the wafer In a second data set of the second series of measurements, identifying a second characteristic occurring at a second time point, wherein the second data set is when the second area on the wafer is in accordance with a second polishing The parameter value is generated immediately upon polishing; calculating a time increment, wherein the time increment is a difference between the first time point and the second time point; and determining that the time increment is positive or negative, and Responding to the determination: if the time increment is positive, reducing the second polishing parameter value based on the time increment to reduce a polishing pressure applied to the second region; or if the time increment is negative , increasing the second polishing based on the time increment Value to increase the polishing pressure applied to the second region. The system of claim 7, wherein the processing device is further configured to: increase or decrease the second polishing parameter value: Identifying a new parameter value from a lookup table by using the time increment; and assigning the new parameter value to the second polishing parameter value. The system of claim 7, wherein the first area on the wafer is a wafer edge, and wherein the second area on the wafer is a wafer center. The system of claim 7, wherein the first series of measurement results and the second series of measurement results are reflection coefficient measurement results, and the first data set and the second data set respectively correspond to the first reflection intensity comparison time The data set and the data set of the second reflection intensity versus time. The system of claim 7, wherein the first characteristic and the second characteristic are each a local minimum of the first data set and the second data set, or each of the first data set and the first The local maximum of the data set. A non-transitory computer readable storage medium encoded with instructions that, when executed, cause a processing device to perform operations, the operations comprising the steps of: first corresponding to a wafer Identifying, in one of the first series of measurements of the first series of regions, a first characteristic occurring at a first time point, wherein the first data set is based on the first region on the wafer First polishing parameter value while polishing Instantly generating; identifying, in a second data set corresponding to one of the second series of measurements of a second region on the wafer, a second characteristic occurring at a second time point, wherein the second data The set is instantaneously generated when the second region on the wafer is polished according to a second polishing parameter value; calculating a time increment, wherein the time increment is the first time point and the second time point a difference between; and determining whether the time increment is positive or negative, and in response to the determining: if the time increment is positive, decreasing the second polishing parameter value based on the time increment to decrease a polishing pressure applied to the second region; or if the time increment is negative, the second polishing parameter value is increased based on the time increment to increase the polishing pressure applied to the second region. The non-transitory computer readable storage medium of claim 12, wherein the step of increasing or decreasing the second polishing parameter value comprises the step of: identifying a new parameter from a lookup table by using the time increment a value; and assigning the new parameter value to the second polishing parameter value. The non-transitory computer readable storage medium of claim 12, wherein the first area on the wafer is a wafer An edge, and wherein the second region on the wafer is a wafer center.