TWI652858B - Beam-steering antenna - Google Patents

Abstract

A tunable beam-switching antenna, the main body of which is a cylindrical resonant cavity and a cylindrical bias circuit. The cylindrical resonant cavity includes a cylindrical outer metal layer overlying an outer surface of a cylindrical substrate. The cylindrical outer metal layer is divided into a plurality of electrically separated conductive regions by the plurality of slots, the plurality of first gaps, and the plurality of second gaps. Each slot includes a control edge and a power supply edge opposite to each other for arranging a diode therein. The first gap electrically separates the two control sides of each two adjacent slots. The second gap electrically separates the control side of the same slot from the power supply side. The invention directly forms the bias circuit for controlling the diode switch into a cylindrical shape, and simultaneously realizes the functions of beam switching and resonant cavity in a simple structure.

Description

Adjustable beam switching antenna

The invention relates to a smart antenna, and in particular to a beam switching antenna.

In wireless communication systems, the antenna is one of the important components that affect the quality of communication. It is an important window for transmitting and receiving electromagnetic waves. Therefore, antennas with good performance can effectively improve communication quality. The current smart antennas can be roughly divided into two categories. The first is adaptive. It uses digital signal processing and adaptive array techniques to generate the required beam pattern. This antenna allows the beam to be accurately targeted to the target while suppressing other interfering signals to enhance reception quality. The second type is a beam-switching antenna, which can switch the direction of the beam pattern to the desired position of the receiving end, so that the signal strength of the receiving end is maximized.

The beam switching antenna is simpler and less expensive than the adaptive antenna. Since the beam switching antenna can appropriately adjust the beam angle during communication, a better communication quality can be achieved in the direction of transmission, and thus it is also widely used.

One of the methods for implementing the beam-switching antenna is to change the radiation direction of the antenna by using the conduction and non-conduction of the diode, for example, using a phase shifter (Phase Shifter) and a Butler Matrix (Butler Matrix) as the front-end circuit manufacturing. The phase difference is obtained, and the antenna is connected to the terminals of these front-end circuits to achieve the effect of beam switching.

However, the insertion loss, area, and bandwidth of these front-end circuits affect the performance of the antenna. In order for the conventional beam switching antenna to have more switching angles, the complexity of the front end circuit design is increased, and the insertion loss is also higher. Therefore, the switchable angle of the conventional beam switching antenna is often limited and cannot be arbitrarily increased.

The object of the present invention is to provide an adjustable beam-switching antenna that does not require a front-end circuit, and can perform a 360-degree beam switching function on a horizontal plane by using a simple bias circuit structure, and avoid complicated front-end circuit design and insertion loss. problem.

In order to achieve the above object, an adjustable beam switching antenna of the present invention has a cylindrical resonant cavity including a cylindrical substrate, a cylindrical outer metal layer and a plurality of diodes. The cylindrical outer metal layer covers an outer surface of the cylindrical substrate, and has a plurality of annular strip-shaped slots, a plurality of first gaps and a plurality of second gaps. The edge of each slot includes a control edge and a power supply edge opposite each other. The first gap is separated between two control edges of each two adjacent slots. These first gaps divide the cylindrical outer metal layer into a plurality of control regions that are electrically separated from one another. The second gap is separated between the control edge of the same slot and the power supply side. The second gaps and slots divide the cylindrical outer metal layer into at least one power supply region, and the power supply region is electrically separated from each control region. Each of the diodes is disposed in one of the plurality of slots and combined with the cylindrical outer metal layer to form a cylindrical bias circuit. Each of the diodes has a positive electrode and a negative electrode. The positive electrode is electrically connected to the power supply region through the power supply side of the corresponding slot, and the negative electrode is electrically connected to the control region through the control edge of the corresponding slot. One.

In one embodiment, the aforementioned slots are laterally arranged as a single endless belt with a spacer between each adjacent slot. The first gap extends vertically downward from the top edge and terminates in the spacing region. The second gap extends transversely through the spacer and is connected between the two adjacent slots and is perpendicular to the first gap to form a T-shaped connection.

In one embodiment, the aforementioned slot includes a plurality of upper slots and a plurality of lower slots. The plurality of upper slots are arranged as an upper loop. A plurality of lower slots are arranged as a lower loop. Each of the upper slots is aligned with one of the lower slots. The power side of each upper slot is below its control edge. The power edge of each slot is above its control edge. There is an upper spacer between each two adjacent upper slots, and a lower spacer between each two adjacent lower slots. Each of the first gaps extends vertically downward from a top edge of the cylindrical outer metal layer through the upper spacer region and the lower spacer region to a bottom edge of the cylindrical outer metal layer. Each second gap extends vertically downward from one end of the power supply side of the upper slot to one end of the power supply side of the lower slot.

In one embodiment, the cylindrical substrate has an inner surface on the back surface of the outer surface, and the inner surface is covered with a cylindrical inner metal layer to compensate for the coupling effect of the radio frequency signal.

In one embodiment, the power supply side of each upper slot is connected with the power edge of the corresponding lower slot by two second gaps, thereby separating the cylindrical outer metal layer from a rectangular power supply area, rectangular A through hole is formed in the power supply region, and the through hole penetrates the cylindrical substrate to communicate with the cylindrical inner metal layer.

In an embodiment, the foregoing adjustable beam switching antenna further includes a skirt structure for increasing the gain value of the adjustable beam switching antenna. The skirt structure surrounds and is connected to one of a top portion and a bottom portion of the cylindrical resonant cavity, wherein the skirt structure is electrically separated from the cylindrical outer metal layer.

In one embodiment, the skirt structure has a metallic skirt with an angle between the metal skirt and the horizontal plane of 12 to 35 degrees.

In one embodiment, the metal skirt has an inner edge and an outer edge, the inner edge is connected to the cylindrical resonant cavity, and the distance between the inner edge and the outer edge is defined as a skirt length of 150 mm to 400 mm. .

In one embodiment, a control circuit is disposed on the top of the cylindrical resonant cavity for controlling conduction or non-conduction of the diode, wherein the control signal generated by the control circuit is transmitted to the cylindrical inner metal layer by a control line. A contact of the top portion is transferred to the control region of the cylindrical outer metal layer through the joint and through the cylindrical substrate.

In one embodiment, the cylindrical resonant cavity is adapted to feed a signal transmission line of a coaxial connector, and the signal transmission line extends from the bottom of the cylindrical resonant cavity to the top.

The adjustable beam switching antenna of the present invention controls the beam switching of the antenna by conducting and non-conducting the diode, and directly forms the bias circuit of the control diode switch into a cylindrical resonant cavity type, and the essence It also has the function of a resonant cavity.

The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments. The directional terms mentioned in the following embodiments, such as upper, lower, left, right, front or rear, etc., are only used to refer to the directions of the accompanying drawings. Therefore, the directional terms are used for illustration only and are not intended to limit the invention.

Referring to FIG. 1A, the adjustable beam-switching antenna 100 of the first embodiment has a cylindrical resonant cavity 100A and is also a cylindrical biasing circuit 150. A control circuit 160 is provided on the top of the cylindrical resonant cavity 100A. The cylindrical resonant cavity 100A has a Flange Mount coaxial connector, also known as an SMA connector. The signal transmission line 200 in the SMA connector extends upwardly to the top of the cylindrical resonant cavity 100A, but is not electrically Connected to control circuit 160.

The cylindrical resonant cavity 100A includes a cylindrical substrate 110, a cylindrical outer metal layer 120, a cylindrical inner metal layer 130, and a plurality of diodes 140. The cylindrical outer metal layer 120 covers the outer surface 112 of the cylindrical substrate 110, and the cylindrical inner metal layer 130 covers the inner surface 114 of the cylindrical substrate 110. The cylindrical outer metal layer 120 is divided into a plurality of conductive regions, such as the control region 121 and the power source shown in FIG. 1A, by a plurality of slots 126 arranged in an annular band shape, a plurality of first gaps 122, and a plurality of second gaps 124. District 123. The edge of the slot 126 includes a control edge 1262 and a power supply edge 1264 opposite each other. It should be noted that the first gap 122 is spaced between the two control edges 1262 of each two adjacent slots 126 for dividing the cylindrical outer metal layer 120 to form a plurality of control regions 121 electrically separated from each other. The second gap 124 is spaced between the control edge 1262 of the same slot 126 and the power supply side 1264. The second gaps 124 and the slots 126 are used to divide the cylindrical outer metal layer 120 into a power source region 123. The power source region 123 is electrically separated from all of the control regions 121.

Slot 126 is used to provide horizontal beam scanning. After the diode 140 is mounted in the slot 126, the diode 140 is combined with the cylindrical outer metal layer 120 to form a cylindrical bias circuit 150. The control signal generated by the control circuit 160 is transmitted to the contact 128a at the top of the cylindrical inner metal layer 130 by a control line 162, and is transmitted to the control region of the cylindrical outer metal layer 120 through the contact 128a and through the cylindrical substrate 110. 121. The path can control the conduction or non-conduction of the diode 140 in the slot 126, and adjust the direction and strength of the electromagnetic wave radiated by the slot 126. When the diode 140 in a certain slot 126 is not conducting, the electromagnetic wave radiated by the slot 126 is stronger than the slot without the slot and the slot 126 in which the other diode is turned on. When a certain slot 126 diode 140 is turned on, the electromagnetic wave radiated by the slot 126 is weaker than when the diode 140 is not conducting.

The embodiment of FIG. 1A utilizes multiple slots 126 to operate simultaneously to increase the radiation gain of the tunable beam-switched antenna 100. A plurality of slots 126 are laterally arranged in the middle of the top edge 125 and the bottom edge 127 of the cylindrical outer metal layer 120 to form an endless belt. The framed portion 152 of FIG. 1A is enlarged as shown in FIG. 1B, with a spacer 154 between each two adjacent slots 126. The first gap 122 extends vertically downward from the top edge 125 and terminates within the spacer 154. In addition, a screw locking area 128 is provided at the boundary between the first gap 122 and the top edge 125, and is used as a lock screw when the skirt metal structure 170 of FIG. 2 (hereinafter referred to as a "skirt structure") is installed. . The second gap 124 extends transversely through the spacer 154 and is connected between two adjacent slots 126, and the second gap 124 is perpendicular to the first gap 122 to form a T-shaped connection within the spacer 154. FIG. 1B shows that the positive electrode P of each diode 140 is electrically connected to the power supply region 123 through the power supply side 1264 of its corresponding slot 126. The negative pole N of the diode 140 is electrically connected to one of the control regions 121 through the control edge 1262 of its corresponding slot 126.

In order to further increase the radiation gain of the tunable beam switching antenna 100. The present invention provides two methods: one is the second embodiment shown in FIG. 2, and a first skirt structure 170 and a second skirt structure 180 are respectively added to the top and bottom of the cylindrical resonant cavity 100A. The radiant energy above and below can be concentrated; the other is the third embodiment shown in FIG. 5, in which another annular strip-shaped slot is added to the cylindrical outer metal layer 320 of the cylindrical resonant cavity 300.

As shown in Fig. 3A, in practice, the cylindrical biasing circuit 150 is formed by forming 24 equally spaced slots 126 in the middle of the metal layer 120A on the surface of the strip-shaped circuit board having a thickness of 0.2 mm. The upper surface metal layer of the elongated circuit board is divided into upper and lower halves by an annular strip arrangement of the slots 126 and a plurality of lateral second gaps 124. The metal layer under the slot 126 serves as the power supply area 123. The metal layer above the slot 126 is divided into 24 equal parts by 24 first gaps 122, each of which is used as a control area 121.

Next, the elongated circuit board is wound into a cylinder to form a cylindrical bias circuit 150 shown in FIGS. 1A and 2. Specifically, a PIN diode is disposed in the slot 126. The cylindrical resonant cavity 100A has a radius R = 75.2 mm and a height H = 53.8 mm. The slot 126 has a length L of 15.6 mm and a slot 126 with a width of W = 3.5 mm. The first gap 122 and the second gap 124 have a width S _W of 0.2 mm. In operation, the power supply region 123 of the lower half of the cylindrical bias circuit 150 is fixedly biased by 5 V; each control region 121 of the upper half is selectively applied with 0 V by the single-chip control circuit 160 or It is 5 V, whereby the diodes 140 in each slot 126 are individually controlled to be conductive or non-conductive.

In this embodiment, a first skirt structure 170 and a second skirt structure 180 are respectively mounted on the top and bottom of the cylindrical resonant cavity 100A to increase the gain value of the adjustable beam switching antenna 100. The first skirt structure 170 and the inner edge of the second skirt structure 180 are respectively surrounded and fixed to the circular top portion 170A and the circular bottom portion 180A. It should be noted, however, that the first skirt structure 170 needs to be electrically separated from the cylindrical outer metal layer 120, but the second skirt structure 180 and the cylindrical outer metal layer 120 may or may not be electrically separated. The angle θ s of the metal skirt 172 of the first skirt structure 170 from the horizontal plane is from 12 degrees to 35 degrees. The angle θ s of the metal skirt 182 of the second skirt structure 180 from the horizontal plane is also from 12 degrees to 35 degrees. The distance from the metal skirt 172 (or 182) to the inner edge of the cylindrical cavity 100A and its outer edge is defined as a skirt length Ls, and the skirt length Ls is 150 mm to 400 mm. Specifically, the skirt length Ls of the first skirt structure 170 and the second skirt structure 180 is 150 mm; the angle θ s of the metal skirt 172 (or 182) from the horizontal plane is 15 degrees. The inner edge of the metal skirt 182 (or 172) extends a fixing portion 184 as shown in FIG. 2 for bonding or fixing the second skirt structure 180 (or the first skirt structure 170) to the cylindrical cavity. The bottom edge (or top edge) of the 100A.

Some reference data regarding the angle θ s of the metal skirts 172, 182 of the first skirt structure 170 and the second skirt structure 180 from the horizontal plane and the skirt length Ls are as follows:

When θ s=15 degrees, <TABLE border="1"borderColor="#000000"width="85%"><TBODY><tr><td> skirt length Ls </td><td>Gain</td><td> Backward radiation</td><td> front to back ratio</td></tr><tr><td> 150mm </td><td> 10.04 dB </td><td > -4.37 dB </td><td> 14.4 dB </td></tr><tr><td> 200mm </td><td> 11.34 dB </td><td> 0.55 dB </td><td> 10.79 dB </td></tr><tr><td> 300mm </td><td> 12.46 dB </td><td> 1.50 dB </td><td> 10.96 dB </td ></tr><tr><td> 400mm </td><td> 13.57 dB </td><td> 1.57 dB </td><td> 12 dB </td></tr></TBODY ></TABLE>

When Ls=150mm,  <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> bevel angle</td><td> maximum sharpness gain</td><td> back </td></tr><tr><td> 12 degrees</td><td> 8.27 dB </td><td> -4.38 </td>< Td> 12.65 dB </td></tr><tr><td> 15 degrees</td><td> 10.04 dB </td><td> -4.38 </td><td> 14.41 dB </td ></tr><tr><td> 20 degrees</td><td> 11.42 dB. </td><td> -0.87 </td><td> 12.29 dB </td></tr>< Tr><td> 25 degrees</td><td> 11.54 dB </td><td> 1.28 </td><td> 10.26 dB </td></tr><tr><td> 30 degrees< /td><td> 10.50 dB </td><td> -1.70 </td><td> 12.20 dB </td></tr><tr><td> 35 degrees</td><td> 7.50 dB </td><td> -8.37 </td><td> 15.87 dB </td></tr></TBODY></TABLE>

In this embodiment, the number of non-conducting PIN diodes (P-intrinsic-N Diodes) can be controlled as needed. Through experiments, in the 24 diodes, when the main body direction and its adjacent left and right sides are in two directions, the diodes in the five directions are not turned on, and the other 19 are turned on, which is better. Maximum radiation gain and front-to-back ratio. Coupled with the effect of the skirt structure, there can be a maximum radiation gain of greater than 8 dB and a front-to-back ratio of greater than 10 dB at a frequency of 5.8 GHz. In the present invention, the "front-to-back ratio" of the antenna is defined as the ratio of the power flux density in the maximum radiation direction (defined as 0 degrees) to the maximum power flux density in the vicinity of the opposite direction (predetermined as 180 degrees ± 20 degrees).

In order to ensure the integrity of the RF signal and increase the coupling effect of the RF signal, the cylindrical inner metal layer 130 may be covered in the upper half of the inner surface 114 of the cylindrical substrate 110 to compensate for the coupling effect thereof, and the cylindrical inner metal layer 130 The unfolded state 130A is shown in the shaded portion in FIG. 3B.

4A and 4B show the radiation pattern of the antenna 100 in the XY plane. Since there are 24 controlled diodes, 24 azimuths can be switched in the XY plane, and FIGS. 4A and 4B are azimuth angles of 0 degrees and 15 degrees, respectively. In the photo at the lower left of FIGS. 4A and 4B, the light emitting diode lamp is lit to indicate that the diode in the azimuth is in a non-conducting state.

As shown in FIG. 5, the cylindrical outer metal layer 320 of the cylindrical resonant cavity 300 of the third embodiment includes a double slot array, the double slot array is composed of a plurality of upper slots 326a, and a plurality of lower slots. Each of the upper slots 326a is aligned with one of the lower slots 326b. The power supply edge 3264a of each upper slot 326a is located below its control edge 3262a; the power supply edge 3264b of each lower slot 326b is located above its control edge 3262b. There is an upper spacer 354a between each two adjacent upper slots 326a; and a lower spacer 354b between each two adjacent lower slots 326b. Each of the first gaps 322 extends vertically downward from the top edge 325 through the upper spacer 354a and the lower spacer 354b to the bottom edge 327. Each of the second gaps 324 extends vertically downward from one end of the power supply side 3264a of the upper slot 326a to one end of the power supply side 3264b of the lower slot 326b.

In a specific embodiment, the upper and lower annular bands are respectively located at 1/4 and 3/4 of the height of the cylindrical resonant cavity 300, and the radius R of the cylindrical resonant cavity 300 is 75.7 mm, and the cylindrical resonant cavity 300 The height H=57.2 mm, the length L of the upper slot 326a and the lower slot 326b is=13.6 mm, the width of the upper slot 326a and the lower slot 326b is W=4.5 mm, and the width of the first gap 322 and the second gap 324 is 0.2 mm, the cylindrical cavity 300 has a thickness of 0.2 mm. In the control of the PIN diode, when a diode in a total direction of five directions in a main direction and its adjacent left and right sides is not turned on, there is an optimum radiation gain. Since a double slot array is employed, the number of PIN diodes that control non-conduction is twice that of the previous embodiment. The maximum radiation gain at 5.8 GHz is approximately 5 dB with a front-to-back ratio of approximately 7.86 dB.

Unlike the second embodiment, the third embodiment has no skirt structure. Since the slots to be controlled are changed from one column to two columns, the cylindrical bias circuit of the third embodiment is also different. The power supply side 3264a of each upper slot 326a and the corresponding power supply side 3264b of the lower slot 326b are connected by two second gaps 324, and a rectangular power supply area 323 is partitioned, and a through hole 329 is defined in the rectangular power supply area 323. The via 329 is connected to the cylindrical inner metal layer 330 on the back side to give a DC bias.

Fig. 6 shows a simple cylindrical resonator 10 of a single slot 126 for observing the electromagnetic signal fed into the cylindrical resonator 10 to be emitted into the air through the slot 126. As shown in the electric field strength profile of Fig. 7A, when the slot 126 of Fig. 6 is not conducting, the electric field radiated at the slot 126 is significantly stronger than elsewhere. When the slot 126 of FIG. 6 is shorted due to the conduction of the diode 140, the electric field originally radiated at the slot 126 of FIG. 7A is weakened to the state shown in FIG. 7B.

In summary, the tunable beam switching antenna of the present invention does not require a front end circuit, but controls the beam switching by turning on and off the PIN diode. The PIN diode is disposed in the slot of the cylindrical resonator. The more the number of slots on the cylindrical cavity, the more azimuth angles can be switched on the horizontal plane. In order to further increase the radiation gain in the horizontal direction of the antenna, the present invention provides two methods: the first method is to add two skirt structures above and below the cylindrical resonant cavity; the second method is on the cylindrical resonant cavity, Design a dual slot array.

The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent. In addition, any of the objects or advantages or features of the present invention are not required to be achieved by any embodiment or application of the invention. In addition, the abstract sections and headings are only used to assist in the search of patent documents and are not intended to limit the scope of the invention.

10‧‧‧Simplified cylindrical cavity

100‧‧‧Adjustable beam switching antenna

100A‧‧‧Cylindrical cavity

110‧‧‧Cylindrical substrate

112‧‧‧ outer surface of cylindrical substrate

114‧‧‧The inner surface of the cylindrical substrate

120‧‧‧Cylindrical outer metal layer

120A‧‧‧metal layer on the surface of a long strip circuit board

121‧‧‧Control area

122‧‧‧First gap

123‧‧‧Power zone

124‧‧‧Second gap

125‧‧‧Top edge of cylindrical outer metal layer

126‧‧‧ slots

1262‧‧‧Control side

1264‧‧‧Power side

127‧‧‧Bottom of the cylindrical outer metal layer

128‧‧‧ Screw lock area

128a‧‧‧Contacts

130‧‧‧Cylindrical inner metal layer

130A‧‧‧Unfolded state of the inner metal layer

140‧‧‧ diode

150‧‧‧Cylindrical bias circuit

152‧‧‧Selected part of Figure 1A

154‧‧‧ interval zone

160‧‧‧Control circuit

162‧‧‧Control line

170‧‧‧First skirt structure

170A‧‧‧Circular top of cylindrical resonator

172‧‧‧Metal skirt

180‧‧‧Second skirt structure

180A‧‧‧round bottom of cylindrical resonator

182‧‧‧Metal skirt

184‧‧‧ Fixed Department

200‧‧‧ signal transmission line

300‧‧‧Cylindrical cavity

320‧‧‧Cylindrical outer metal layer

322‧‧‧First gap

323‧‧‧Rectangular power supply area

325‧‧‧Top edge of cylindrical cavity

326a‧‧‧Slot

326b‧‧‧Slots

3262a‧‧‧Control side of the upper slot

3264a‧‧‧Power side of the upper slot

3262b‧‧‧Control side of the lower slot

3264b‧‧‧ power supply side of the slot

327‧‧‧Bottom of cylindrical cavity

329‧‧‧through hole

330‧‧‧Cylindrical inner metal layer

354a‧‧‧ upper compartment

354b‧‧‧ lower compartment

Positive pole of P‧‧‧ diode

Negative pole of N‧‧‧ diode

R‧‧‧ Radius of cylindrical cavity

H‧‧‧ Height of cylindrical resonator

L‧‧‧Slot length

W‧‧‧Slot width

S _W ‧‧‧ gap width

θ s‧‧‧ The angle between the metal skirt of the skirt structure and the horizontal plane

Ls‧‧‧ skirt length

FIG. 1A is a schematic diagram showing the main structure of an adjustable beam switching antenna according to a first embodiment of the present invention.

FIG. 1B is an enlarged schematic view of the gap and the slot of FIG. 1A.

2 is a schematic diagram of an adjustable beam switching antenna having a skirt structure according to a second embodiment of the present invention.

3A is a schematic view showing the development of a cylindrical outer metal layer of the adjustable beam switching antenna of the present invention.

3B is a schematic view showing the development of a cylindrical inner metal layer of the adjustable beam switching antenna of the present invention.

4A is a radiation pattern diagram of the adjustable beam switching antenna when the five diodes in the vicinity of the horizontal azimuth angle of 0 degrees are not turned on.

FIG. 4B is a radiation pattern diagram of the adjustable beam switching antenna when the five diodes in the vicinity of the horizontal azimuth angle of 15 degrees are not turned on.

FIG. 5 is a schematic diagram of an adjustable beam switching antenna having a slot with a double loop strip arrangement according to a third embodiment of the present invention.

Figure 6 is a schematic view of a cylindrical resonant cavity with a single slot.

7A is an electric field distribution of a cylindrical resonant cavity when the slot of FIG. 6 is not conducting.

Fig. 7B is an electric field distribution of the cylindrical resonant cavity when the slot of Fig. 6 is turned on.

no

no

Claims (10)

A tunable beam-switching antenna having a cylindrical resonant cavity, the cylindrical resonant cavity comprising: a cylindrical substrate having an outer surface; a cylindrical outer metal layer covering the outer surface of the cylindrical substrate And having a plurality of annular strip-shaped slots, a plurality of first gaps and a plurality of second gaps, wherein each of the slots includes a control edge and a power supply edge opposite to each other, wherein the first gap is separated by two phases Between the two control edges of the adjacent slot, and the first gap divides the cylindrical outer metal layer into a plurality of control regions electrically separated from each other, wherein the second gap is separated by the same slot The control edge and the power supply edge, and the second gap and the slots divide the cylindrical outer metal layer into at least one power supply region, the power supply region is electrically separated from the control regions; and the plurality of a pole body, each of the diodes being disposed in one of the plurality of slots, and combining with the cylindrical outer metal layer to form a cylindrical bias circuit, wherein each of the diodes has a positive pole and a negative pole , the positive pass The corresponding power supply side of the slot is electrically connected to the power zone, the negative electrode through which the control slots corresponding to its sides and electrically connected to the control region of one of these. The tunable beam-switching antenna of claim 1, wherein the cylindrical outer metal layer has a top edge and a bottom edge, and the plurality of slots are laterally arranged as a single ring band, and the ring zone is located In the middle of the top edge and the bottom edge, there is a space between each two adjacent slots, wherein the first gap extends vertically downward from the top edge and terminates in the spacing area, the second gap Transversely extending through the spacer to be connected between the two adjacent slots, and the second gap is perpendicular to the first gap to form a T-shaped connection. The tunable beam-switching antenna of claim 1, wherein the cylindrical outer metal layer has a top edge and a bottom edge, and the plurality of slots includes a plurality of upper slots and a plurality of lower slots. The upper slot is arranged as an upper loop, and the lower slot is arranged as a lower loop, and the upper loop and the lower loop are located between the top edge and the bottom edge, and each of the upper slots is aligned with the upper slot Waiting for one of the lower slots, the power edge of each of the upper slots is located below its control edge, and the power edge of each of the lower slots is above its control edge, and each of the two adjacent slots An upper spacer is disposed between the holes, and each of the two adjacent lower slots has a lower spacer region, wherein each of the first gaps extends vertically downward from the top edge through the upper spacer region and the lower spacer region And connected to the bottom edge, each of the second gaps extends vertically downward from one end of the power supply side of the upper slot to one end of the power supply side of the lower slot. The tunable beam-switching antenna of claim 3, wherein the cylindrical substrate has an inner surface on a back surface of the outer surface, the inner surface being covered with a cylindrical inner metal layer. The tunable beam-switching antenna of claim 4, wherein the power supply side of each of the upper slots is connected to the corresponding power supply side of the lower slot by two second gaps, The cylindrical outer metal layer is separated from the rectangular power supply region, and a through hole is formed in the rectangular power supply region, and the through hole penetrates the cylindrical substrate to communicate with the cylindrical inner metal layer. The adjustable beam-switching antenna according to claim 1, further comprising a skirt structure surrounding and connected to one of a top portion and a bottom portion of the cylindrical resonant cavity, wherein the skirt structure and the skirt structure The cylindrical outer metal layer is electrically separated. The tunable beam-switching antenna of claim 6, wherein the skirt structure has a metal skirt having an angle of from 12 to 35 degrees from the horizontal plane. The adjustable beam-switching antenna according to claim 6, wherein the metal skirt has an inner edge and an outer edge, and the inner edge is connected to the cylindrical resonant cavity, and the inner edge and the outer edge are The distance is defined as a skirt length of 150 mm to 400 mm. The tunable beam-switching antenna of claim 6, wherein the top of the cylindrical resonant cavity is provided with a control circuit, wherein the control signal generated by the control circuit is transmitted to the cylindrical inner metal by a control line. A junction at the top of the layer is transferred to the control region of the cylindrical outer metal layer through the joint and through the cylindrical substrate. The tunable beam-switching antenna of claim 6, wherein the cylindrical resonant cavity is adapted to feed a signal transmission line of a coaxial connector, the signal transmission line extending from the bottom of the cylindrical resonant cavity to the top .