TWI649806B - Method for operating microwave heating device and microwave annealing process using the same - Google Patents

Method for operating microwave heating device and microwave annealing process using the same Download PDF

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Publication number
TWI649806B
TWI649806B TW106133483A TW106133483A TWI649806B TW I649806 B TWI649806 B TW I649806B TW 106133483 A TW106133483 A TW 106133483A TW 106133483 A TW106133483 A TW 106133483A TW I649806 B TWI649806 B TW I649806B
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heating chamber
microwave
waveguides
transverse
longitudinal
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TW106133483A
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Chinese (zh)
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TW201916173A (en
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黃昆平
胡竹生
張志振
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財團法人工業技術研究院
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Priority to TW106133483A priority Critical patent/TWI649806B/en
Priority to US15/854,802 priority patent/US10692742B2/en
Priority to CN201810263226.9A priority patent/CN109587863B/en
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Publication of TW201916173A publication Critical patent/TW201916173A/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/64Heating using microwaves
    • H05B6/80Apparatus for specific applications
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/64Heating using microwaves
    • H05B6/66Circuits
    • H05B6/68Circuits for monitoring or control
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2206/00Aspects relating to heating by electric, magnetic, or electromagnetic fields covered by group H05B6/00
    • H05B2206/04Heating using microwaves

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Constitution Of High-Frequency Heating (AREA)

Abstract

本發明提供一種微波加熱裝置的操作方法,包括在加熱腔室中設置載台、在加熱腔室外設置微波發射機,並提供半波整流電源供應器耦接至微波發射機,半波整流電源供應器包含有電容器;加熱腔室與微波發射機之間連接有縱向波導波管與橫向波導波管。調整半波整流電源供應器之電容器的電容值,使微波發射機發出的微波波形頻寬擴大至產生複數重疊耦合,倍增微波模態數;經由半波整流電源供應器供應電力至微波發射機,使微波藉由縱向波導波管與橫向波導波管傳遞至加熱腔室中,並於加熱腔室中形成多重微波模態,達到均勻加熱的目的。The invention provides a method for operating a microwave heating device, which includes setting a carrier in a heating chamber, setting a microwave transmitter outside the heating chamber, and providing a half-wave rectified power supply coupled to the microwave transmitter and a half-wave rectified power supply. The condenser includes a capacitor; a longitudinal waveguide tube and a transverse waveguide tube are connected between the heating chamber and the microwave transmitter. Adjust the capacitance value of the capacitor of the half-wave rectified power supply, so that the bandwidth of the microwave waveform emitted by the microwave transmitter is expanded to produce complex overlapping coupling and multiply the number of microwave modes. Power is supplied to the microwave transmitter through the half-wave rectified power supply. The microwave is transmitted to the heating chamber through the longitudinal waveguide tube and the transverse waveguide tube, and multiple microwave modes are formed in the heating chamber to achieve the purpose of uniform heating.

Description

微波加熱裝置的操作方法及使用該方法之微波退火製程Operation method of microwave heating device and microwave annealing process using the same

本發明是有關於一種微波加熱裝置的操作方法及使用該方法之微波退火製程,特別是有關於一種微波加熱裝置的耦合操作方法,其藉由調整半波整流電源供應器之電容器的電容,使微波發射機發出的微波波形頻寬產生重疊耦合,從而倍增微波模態數,達到高均勻度且省時節能的微波加熱效果。 The invention relates to a method for operating a microwave heating device and a microwave annealing process using the method, and more particularly to a method for coupling operation of a microwave heating device. By adjusting the capacitance of a capacitor of a half-wave rectified power supply, The microwave waveform bandwidth generated by the microwave transmitter is overlapped and coupled, thereby multiplying the number of microwave modalities to achieve a highly uniform and time-saving energy-saving microwave heating effect.

微波加熱技術除了應用於如木材、酒麴等之乾燥,橡膠硫化處理,肉品解凍等,亦具有應用於半導體矽晶圓退火製程之潛力。半導體製程多達數百項程序,每一項皆影響矽晶圓的產能與良率。其中晶圓退火乃是在離子佈植(ion implantation)後的必要程序。因四價半導體佈植三價或五價元素時,容易產生晶格缺陷,導致半導體性質劇變,故須以退火程序恢復晶體的結構和消除缺陷,並使間隙式位置的雜質原子藉由退火進入置換式位置, 達到電性活化的目的。在半導體製程中,由於摻雜物質於高溫下(高於800℃)容易發生擴散,再加上當涉及矽鍺材料的使用,退火溫度必須低於450℃以避免鍺元素的擴散,因此採用低溫之微波退火製程,是半導體製程可預見的趨勢;此外,其他退火方式如紅外線退火或遠紫外線雷射退火技術,在面對半導體元件介面厚度與線寬不斷縮小的要求下,已出現瓶頸,但微波退火方法則不受上述限制。 In addition to microwave heating technology such as drying of wood, wine, etc., rubber vulcanization, meat thawing, etc., it also has the potential to be applied to the semiconductor silicon wafer annealing process. There are hundreds of procedures in the semiconductor manufacturing process, each of which affects the yield and yield of silicon wafers. The wafer annealing is a necessary process after ion implantation. Because trivalent or pentavalent elements are implanted in a tetravalent semiconductor, lattice defects are easily generated, resulting in dramatic changes in semiconductor properties. Therefore, the annealing structure must be used to restore the crystal structure and eliminate defects, and allow impurity atoms in the gap position to enter through annealing. Displacement position, To achieve the purpose of electrical activation. In the semiconductor manufacturing process, since the dopant is prone to diffusion at high temperatures (above 800 ° C), coupled with the use of silicon-germanium materials, the annealing temperature must be lower than 450 ° C to avoid the diffusion of germanium, so a low-temperature The microwave annealing process is a foreseeable trend in the semiconductor process. In addition, other annealing methods such as infrared annealing or far-ultraviolet laser annealing technology have encountered bottlenecks in the face of the shrinking semiconductor device interface thickness and line width, but microwave The annealing method is not limited by the above.

然而,微波退火的技術門檻在於均勻度的要求須達到高良率的嚴格標準。現有商用微波退火設備普遍採用5.8GHz微波頻率取代較為通用之工業微波加熱頻率2.45GHz,藉由縮短微波波長進而壓抑駐波效應,達到均勻退火之目的。惟5.8GHz磁控管相較於2.45GHz磁控管,成本高而效率低。因此,本發明對於半導體(矽晶、III-V或II-VI半導體)微波退火程序以及其他的被加熱物件提出一種多重模態微波加熱裝置的操作方法,其可採用2.45GHz通用工業加熱頻率,並藉由倍增微波加熱模態之數量,提升微波加熱效率與均勻度,進而提高被加熱物的產能與良率。 However, the technical threshold of microwave annealing is that the requirement of uniformity must meet the strict standard of high yield. Existing commercial microwave annealing equipment generally uses a 5.8GHz microwave frequency to replace the more common industrial microwave heating frequency of 2.45GHz. By shortening the microwave wavelength and suppressing the standing wave effect, the purpose of uniform annealing is achieved. However, compared to a 2.45GHz magnetron, a 5.8GHz magnetron is costly and inefficient. Therefore, the present invention proposes a method of operating a multi-mode microwave heating device for a semiconductor (silicon, III-V or II-VI semiconductor) microwave annealing program and other heated objects, which can use a general industrial heating frequency of 2.45 GHz. And by doubling the number of microwave heating modes, the microwave heating efficiency and uniformity are improved, and the productivity and yield of the object to be heated are improved.

本發明提供一種微波加熱裝置的操作方法,可採用2.45GHz通用工業加熱頻率進行加熱(但本發明並不限定於採用2.45GHz微波頻率),藉由倍增微波模態數,進而提升微波加熱的均勻度並且省時節能。 The invention provides a method for operating a microwave heating device, which can be heated using a general industrial heating frequency of 2.45 GHz (but the invention is not limited to the use of a microwave frequency of 2.45 GHz). By doubling the number of microwave modes, the uniformity of microwave heating can be improved. And save time and energy.

本發明的微波加熱裝置的操作方法,包括在加熱腔室中設置容置空間;容置空間中之一載台具有平面用以承載微波受熱物件;於加熱腔室外設置微波發射機用以發射微波;設置半波整流電源供應器分別耦接至各個微波發射機,各個半波整流電源供應器包含有一電容器;於加熱腔室與微波發射機之間連接縱向波導波管與橫向波導波管,縱向波導波管中的電場極化方向垂直於載台的該平面,橫向波導波管中的電場極化方向平行於載台的該平面。調整各個半波整流電源供應器之電容器的電容值,使微波發射機發出的微波波形頻寬產生重疊耦合,並經由半波整流電源供應器供應電力至微波發射機,使微波藉由縱向波導波管與橫向波導波管傳遞至加熱腔室中,並於加熱腔室中形成多重微波模態。 The operating method of the microwave heating device of the present invention includes setting an accommodating space in the heating chamber; one of the pedestals in the accommodating space has a plane for carrying microwave heated objects; and a microwave transmitter is arranged outside the heating chamber for transmitting microwaves. ; Set a half-wave rectified power supply respectively coupled to each microwave transmitter, each half-wave rectified power supply includes a capacitor; a longitudinal waveguide tube and a transverse waveguide tube are connected between the heating chamber and the microwave transmitter, longitudinally The direction of the electric field polarization in the waveguide is perpendicular to the plane of the stage, and the direction of the electric field polarization in the transverse waveguide is parallel to the plane of the stage. Adjust the capacitance of the capacitors of each half-wave rectified power supply, so that the microwave waveform bandwidth from the microwave transmitter is overlapped and coupled, and supply power to the microwave transmitter through the half-wave rectified power supply, so that the microwave passes through the longitudinal waveguide wave. The tube and the transverse waveguide are transmitted to the heating chamber, and multiple microwave modes are formed in the heating chamber.

本發明並提供一種半導體摻雜物質之微波退火製程與一種多重模態微波加熱裝置的製程,使用本發明之微波加熱裝置的操作方法,可採用2.45GHz通用工業加熱頻率進行加熱(但不限定於採用2.45GHz微波頻率),藉由倍增微波模態數,進而提升如半導體摻雜物質之微波退火製程的效率與均勻度,進而提高產能與良率。 The invention also provides a microwave annealing process of a semiconductor doped substance and a process of a multi-mode microwave heating device. Using the operating method of the microwave heating device of the present invention, the general industrial heating frequency of 2.45 GHz can be used for heating (but not limited to (Using 2.45GHz microwave frequency), by multiplying the number of microwave modes, the efficiency and uniformity of the microwave annealing process such as semiconductor doped substances are improved, thereby increasing productivity and yield.

本發明的半導體摻雜物質之微波退火製程,包括對一具有摻雜物質之半導體元件,提供一個微波加熱裝置,調整微波加熱裝置之半波整流電源供應器的電容器之電容值,經由半波整流電源供應器供應電力至微波發射機,使微波藉由縱向波導波管與橫向波導波管傳遞至微波加熱裝置的加熱腔室中,並於加熱腔室 中形成多重微波模態,進而對具有摻雜物質之半導體元件進行退火製程。 The microwave annealing process for a semiconductor doped substance of the present invention includes providing a microwave heating device for a semiconductor element having a doped substance, adjusting the capacitance value of a capacitor of a half-wave rectified power supply of the microwave heating device, and subjecting the half-wave rectification to The power supply supplies power to the microwave transmitter, so that the microwave is transmitted to the heating chamber of the microwave heating device through the longitudinal waveguide tube and the transverse waveguide tube, and the heating chamber Multiple microwave modalities are formed during the annealing process.

本發明的多重模態微波加熱裝置的製程,包括提供一個微波加熱裝置,調整微波加熱裝置之半波整流電源供應器的電容值,使微波發射機發出的微波波形頻寬擴大至產生複數重疊耦合,倍增微波模態數。經由半波整流電源供應器供應電力至微波發射機,使微波藉由縱向波導波管與橫向波導波管傳遞至微波加熱裝置的加熱腔室中,並於加熱腔室中形成多重微波模態。 The manufacturing process of the multi-modal microwave heating device of the present invention includes providing a microwave heating device, adjusting the capacitance value of the half-wave rectified power supply of the microwave heating device, and expanding the bandwidth of the microwave waveform emitted by the microwave transmitter to produce complex overlapping coupling. , Multiply the number of microwave modes. Power is supplied to the microwave transmitter through a half-wave rectified power supply, so that the microwave is transmitted to the heating chamber of the microwave heating device through the longitudinal waveguide tube and the transverse waveguide tube, and multiple microwave modes are formed in the heating chamber.

根據上述,本發明藉由調整半波整流電源供應器之電容器的電容值,使微波發射機發出的微波波形頻寬擴大至產生複數重疊耦合,倍增微波模態數,再藉由半波整流電源供應器以及縱向波導波管與橫向波導波管傳遞微波至加熱腔室中並於加熱腔室中形成多重微波模態,進而達到均勻加熱的目的。 According to the above, by adjusting the capacitance value of the capacitor of the half-wave rectified power supply, the present invention expands the microwave waveform bandwidth emitted by the microwave transmitter to produce complex overlapping coupling, doubles the number of microwave modes, and then uses the half-wave rectified power supply. The supplier, the longitudinal waveguide tube and the transverse waveguide tube transmit microwaves to the heating chamber and form multiple microwave modes in the heating chamber, thereby achieving the purpose of uniform heating.

為讓本發明的上述特徵能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 In order to make the above features of the present invention more comprehensible, embodiments are described below in detail with reference to the accompanying drawings.

50‧‧‧被加熱物件 50‧‧‧ heated object

100、200、500‧‧‧多重模態微波加熱裝置 100, 200, 500‧‧‧ multi-mode microwave heating devices

110、210、310、410‧‧‧加熱腔室 110, 210, 310, 410‧‧‧ heating chamber

111a~114a、111b~114b、201a~212a、201b~212b、311~316‧‧‧輸入埠 111a ~ 114a, 111b ~ 114b, 201a ~ 212a, 201b ~ 212b, 311 ~ 316‧‧‧ Input port

120‧‧‧旋轉及升降機構 120‧‧‧Rotating and lifting mechanism

125、325‧‧‧載台 125, 325‧‧‧

1~12、1’~12’、1”~12”、131~142、331~336、431~442‧‧‧微波發射機 1 ~ 12, 1 ’~ 12’, 1 ”~ 12”, 131 ~ 142, 331 ~ 336, 431 ~ 442‧‧‧microwave transmitter

151~156、151a、152a‧‧‧縱向波導波管 151 ~ 156, 151a, 152a‧‧‧Vertical waveguide

161~166、161a、162a‧‧‧橫向波導波管 161 ~ 166, 161a, 162a‧‧‧transverse waveguide

170‧‧‧三相交流電源 170‧‧‧Three-phase AC power

172‧‧‧△接電源 172‧‧‧ △ Power

174‧‧‧Y接電源 174‧‧‧Y connected to power

180‧‧‧同相位等功率分配器 180‧‧‧ Same-phase equal power splitter

185‧‧‧180度相位移轉器 185‧‧‧180 degree phase shift converter

190‧‧‧半波整流電源供應器 190‧‧‧ Half-wave Rectified Power Supply

191‧‧‧電容器 191‧‧‧Capacitor

351~356、451~456‧‧‧縱向波導波管 351 ~ 356, 451 ~ 456‧‧‧ Vertical waveguide

461~466‧‧‧橫向波導波管 461 ~ 466‧‧‧transverse waveguide

570‧‧‧捲軸 570‧‧‧Scrolls

575‧‧‧輸送帶 575‧‧‧ conveyor belt

580‧‧‧低通濾波器 580‧‧‧low-pass filter

h1~h12‧‧‧高度 h 1 ~ h 12 ‧‧‧ height

L1~L6、L11~L22、L31~L42‧‧‧長度 L 1 ~ L 6 , L 11 ~ L 22 , L 31 ~ L 42 ‧‧‧length

S101~S106、S201~S203‧‧‧流程 S101 ~ S106, S201 ~ S203‧‧‧Process

Zin1~Zin6、Zin11~Zin22‧‧‧輸入阻抗 Z in1 ~ Z in6 , Z in11 ~ Z in22 ‧‧‧Input impedance

λg‧‧‧導波管波長 λ g ‧‧‧ Waveguide Wavelength

圖1A-1、圖1A-2是依照本發明第一實施例的多重模態微波加熱裝置的示意圖。 1A-1 and 1A-2 are schematic diagrams of a multi-modal microwave heating device according to a first embodiment of the present invention.

圖1B-1、圖1B-2、圖1B-3、圖1B-4、圖1B-5、圖1B-6是依照本發明的第一實施例的多重模態微波加熱裝置的電源電路配置 圖。 1B-1, FIG. 1B-2, FIG. 1B-3, FIG. 1B-4, FIG. 1B-5, and FIG. 1B-6 are power circuit configurations of a multi-mode microwave heating device according to a first embodiment of the present invention Illustration.

圖2A是依照本發明的第一實施例的多重縱向奇模態的激發方式的示意圖。 FIG. 2A is a schematic diagram of an excitation method of multiple longitudinal odd modes according to the first embodiment of the present invention.

圖2B是依照本發明的第一實施例的多重縱向偶模態的激發方式的示意圖。 FIG. 2B is a schematic diagram of an excitation manner of multiple longitudinal even modes according to the first embodiment of the present invention.

圖2C是依照本發明的第一實施例的多重橫向奇模態的激發方式的示意圖。 FIG. 2C is a schematic diagram of an excitation manner of multiple lateral odd modes according to the first embodiment of the present invention.

圖2D是依照本發明的第一實施例的多重橫向偶模態的激發方式的示意圖。 FIG. 2D is a schematic diagram of an excitation manner of multiple transverse even modes according to the first embodiment of the present invention.

圖2E是依照本發明的第一實施例的合併多重縱向奇模態與多重縱向偶模態的激發方式的示意圖。 FIG. 2E is a schematic diagram of an excitation manner combining multiple longitudinal odd modes and multiple longitudinal even modes according to the first embodiment of the present invention.

圖2F是依照本發明的第一實施例的合併多重橫向奇模態與多重橫向偶模態的激發方式的示意圖。 FIG. 2F is a schematic diagram of an excitation method combining multiple transverse odd modes and multiple transverse even modes according to the first embodiment of the present invention.

圖2G是依照本發明的第一實施例合併多重縱向奇模態、多重縱向偶模態、多重橫向奇模態以及多重橫向偶模態的激發方式的示意圖。 FIG. 2G is a schematic diagram of an excitation manner combining multiple longitudinal odd modes, multiple longitudinal even modes, multiple transverse odd modes, and multiple transverse even modes according to the first embodiment of the present invention.

圖2H是依照本發明的第二實施例的多重模態微波加熱裝置的之立體透視圖。 FIG. 2H is a perspective view of a multi-modal microwave heating device according to a second embodiment of the present invention.

圖3A是依照本發明的第三實施例的多重模態微波加熱裝置的示意圖。 3A is a schematic diagram of a multi-modal microwave heating device according to a third embodiment of the present invention.

圖3B是圖3A的縱向電場強度分布的模擬結果的示意圖。 FIG. 3B is a schematic diagram of a simulation result of the longitudinal electric field intensity distribution of FIG. 3A.

圖3C是依照本發明的第三實施例的另一實施方式的示意圖。 FIG. 3C is a schematic diagram of another embodiment according to a third embodiment of the present invention.

圖4是依照本發明的第四實施例的多重模態微波加熱裝置的示意圖。 FIG. 4 is a schematic diagram of a multi-modal microwave heating apparatus according to a fourth embodiment of the present invention.

圖5是依照本發明的第五實施例的微波加熱裝置的操作方法之步驟圖。 5 is a step diagram of a method of operating a microwave heating apparatus according to a fifth embodiment of the present invention.

圖6是依照本發明的第六實施例的半導體摻雜物質之微波退火製程步驟圖。 FIG. 6 is a step diagram of a microwave annealing process of a semiconductor doped substance according to a sixth embodiment of the present invention.

請參考以下實施例及隨附圖式,以便更充分地了解本發明,但是本發明仍可以藉由多種不同形式來實踐,且不應將其解釋為限於本文所述之實施例。而在圖式中,為求明確起見對於各構件以及其相對尺寸可能未按實際比例繪製。 Please refer to the following embodiments and accompanying drawings to better understand the present invention, but the present invention can still be implemented in many different forms, and should not be construed as being limited to the embodiments described herein. In the drawings, for the sake of clarity, the components and their relative sizes may not be drawn to actual scale.

圖1A-1是依照本發明第一實施例的多重模態微波加熱裝置的示意圖。請參考圖1A-1,多重模態微波加熱裝置100具有六個縱向波導波管151~156與六個橫向波導波管161~166,其分別連接於加熱腔室110與十二個微波發射機131~142之間,用以傳輸微波發射機131~142所產生的微波至加熱腔室110中,並於加熱腔室110中形成多重固有模態(或稱本徵模態)。此外,多重模態微波加熱裝置100具有載台125,其配置於加熱腔室110中,以承載被加熱物件50。在本實施例中,載台125藉由載台旋轉及升降機構120上下移動並旋轉。縱向波導波管151~156中的傳波模式為TE10模式,其電場方向與載台125的平面(xy平面)垂直。橫向 波導波管161~166中的傳波模式亦為TE10模式,但其電場方向與載台125的平面平行。由於前述兩者的電場方向互相垂直,因此,六個縱向波導波管151~156所激發的多重固有模態與六個橫向波導波管161~166所激發的多重固有模態彼此是正交的。此外,由於六個縱向波導波管151~156與加熱腔室110的連接位置各不相同,因此,六個縱向波導波管151~156垂直加熱腔室110的底面的高度h1、h3、h5、h7、h9、h11皆相異。也就是h1≠h3≠h5≠h7≠h9≠h11。故,在本實施例中,只要加熱腔室110夠大,則加熱腔室110中即可具有足夠的多重固有模態數目,使得該六個縱向波導波管151~156所激發的多重固有模態可為不同。 1A-1 is a schematic diagram of a multi-modal microwave heating device according to a first embodiment of the present invention. Please refer to FIG. 1A-1. The multi-mode microwave heating device 100 has six longitudinal waveguide tubes 151 to 156 and six transverse waveguide tubes 161 to 166, which are respectively connected to the heating chamber 110 and twelve microwave transmitters. Between 131 and 142, the microwaves generated by the microwave transmitters 131 to 142 are transmitted to the heating chamber 110, and multiple natural modes (or intrinsic modes) are formed in the heating chamber 110. In addition, the multi-modal microwave heating device 100 has a stage 125 that is disposed in the heating chamber 110 to carry the object 50 to be heated. In this embodiment, the stage 125 is moved up and down by the stage rotation and lifting mechanism 120 and rotated. The wave propagation modes in the longitudinal waveguide tubes 151 to 156 are TE 10 modes, and the direction of the electric field is perpendicular to the plane (xy plane) of the stage 125. The wave propagation modes in the transverse waveguides 161 to 166 are also TE 10 mode, but the direction of the electric field is parallel to the plane of the stage 125. Since the electric fields of the foregoing two are perpendicular to each other, the multiple natural modes excited by the six longitudinal waveguides 151 to 156 and the multiple natural modes excited by the six lateral waveguides 161 to 166 are orthogonal to each other. . In addition, since the connection positions of the six longitudinal waveguides 151 to 156 and the heating chamber 110 are different, the heights of the bottom surfaces of the six longitudinal waveguides 151 to 156 perpendicular to the heating chamber 110 are h 1 , h 3 , h 5 , h 7 , h 9 and h 11 are all different. That is, h 1 ≠ h 3 ≠ h 5 ≠ h 7 ≠ h 9 ≠ h 11 . Therefore, in this embodiment, as long as the heating chamber 110 is large enough, the heating chamber 110 may have a sufficient number of multiple natural modes, so that the multiple natural modes excited by the six longitudinal waveguides 151 to 156 are multiple. The states can be different.

同理,由於六個橫向波導波管161~166與加熱腔室110的連接位置各不相同,因此,六個橫向波導波管161~166垂直於加熱腔室110的高度h2、h4、h6、h8、h10、h12皆相異。也就是,h2≠h4≠h6≠h8≠h10≠h12。因此,只要加熱腔室110中的多重固有模態數夠多,即可使得六個橫向波導波管161~166所激發的多重固有模態為不同。因此,本實施例的實施方式可達到均勻加熱的目的。在本實施例中,阻抗匹配器(未繪示)並非是必要元件,但可在下列情況發生時使用:(1).當微波發射機131~142承受的反射功率甚大時,可藉由阻抗匹配器調降之。(2).當某些導波管151~156、161~166所激發的多重模態為同一模態時,可藉由調整阻抗匹配器,使其激發不同模態。 Similarly, since the connection positions of the six transverse waveguides 161 to 166 and the heating chamber 110 are different, the six transverse waveguides 161 to 166 are perpendicular to the heights h 2 , h 4 , and h 6 , h 8 , h 10 , h 12 are all different. That is, h 2 ≠ h 4 ≠ h 6 ≠ h 8 ≠ h 10 ≠ h 12 . Therefore, as long as the number of multiple natural modes in the heating chamber 110 is sufficient, the multiple natural modes excited by the six transverse waveguides 161 to 166 can be made different. Therefore, the implementation of this embodiment can achieve the purpose of uniform heating. In this embodiment, an impedance matcher (not shown) is not an essential component, but can be used when the following conditions occur: (1). When the reflected power of the microwave transmitters 131 ~ 142 is very large, the impedance can be determined by the impedance The matcher lowers it. (2). When the multiple modes excited by some waveguides 151 ~ 156, 161 ~ 166 are the same mode, the impedance matcher can be adjusted to excite different modes.

圖1A-2是依照本發明第一實施例的多重模態微波加熱裝 置的另一示意圖。請參考圖1A-2,多重模態微波加熱裝置100具有六個縱向波導波管151~156與六個橫向波導波管161~166,其分別連接於加熱腔室110與十二個微波發射機131~142之間,用以傳輸微波發射機131~142所產生的微波至加熱腔室110中,並於加熱腔室110中形成多重固有模態(或稱本徵模態)。此外,多重模態微波加熱裝置100具有載台125,其配置於加熱腔室110中,以承載被加熱物件50。在本實施例中,載台125藉由載台旋轉及升降機構120上下移動並旋轉。縱向波導波管151~156中的傳波模式為TE10模式,其電場方向與載台125的平面(xy平面)垂直。橫向波導波管161~166中的傳波模式亦為TE10模式,但其電場方向與載台125的平面平行。由於前述兩者的電場方向互相垂直,因此,六個縱向波導波管151~156所激發的多重固有模態與六個橫向波導波管161~166所激發的多重固有模態彼此是正交且相異的。此外,六個縱向波導波管151~156的長度L31、L33、L35、L37、L39、L41皆相異。也就是L31≠L33≠L35≠L37≠L39≠L41。故,在本實施例中,只要加熱腔室110夠大,則加熱腔室110中即可具有足夠的多重固有模態數目,使得該六個縱向波導波管151~156所激發的多重固有模態可為不同。 1A-2 is another schematic diagram of a multi-modal microwave heating device according to a first embodiment of the present invention. Please refer to FIG. 1A-2. The multi-mode microwave heating device 100 has six longitudinal waveguide tubes 151 to 156 and six transverse waveguide tubes 161 to 166, which are respectively connected to the heating chamber 110 and twelve microwave transmitters. Between 131 and 142, the microwaves generated by the microwave transmitters 131 to 142 are transmitted to the heating chamber 110, and multiple natural modes (or intrinsic modes) are formed in the heating chamber 110. In addition, the multi-modal microwave heating device 100 has a stage 125 that is disposed in the heating chamber 110 to carry the object 50 to be heated. In this embodiment, the stage 125 is moved up and down by the stage rotation and lifting mechanism 120 and rotated. The wave propagation modes in the longitudinal waveguide tubes 151 to 156 are TE 10 modes, and the direction of the electric field is perpendicular to the plane (xy plane) of the stage 125. The wave propagation modes in the transverse waveguides 161 to 166 are also TE 10 mode, but the direction of the electric field is parallel to the plane of the stage 125. Because the directions of the electric fields are perpendicular to each other, the multiple natural modes excited by the six longitudinal waveguides 151 to 156 and the multiple natural modes excited by the six lateral waveguides 161 to 166 are orthogonal to each other and Different. In addition, the lengths L 31 , L 33 , L 35 , L 37 , L 39 , and L 41 of the six longitudinal waveguides 151 to 156 are all different. That is, L 31 ≠ L 33 ≠ L 35 ≠ L 37 ≠ L 39 ≠ L 41 . Therefore, in this embodiment, as long as the heating chamber 110 is large enough, the heating chamber 110 may have a sufficient number of multiple natural modes, so that the multiple natural modes excited by the six longitudinal waveguides 151 to 156 are multiple. The states can be different.

同理,六個橫向波導波管161~166的長度L32、L34、L36、L38、L40、L42皆相異。也就是,L32≠L34≠L36≠L38≠L40≠L42。因此,只要加熱腔室110中的多重固有模態數夠多,即可使得六個橫向波導波管161~166所激發的多重固有模態為不同。因此,本實施 例的實施方式可達到均勻加熱的目的。在本實施例中,阻抗匹配器(未繪示)並非是必要元件,但可在下列情況發生時使用:(1).當微波發射機131~142承受的反射功率甚大時,可藉由阻抗匹配器調降之。(2).當某些導波管151~156、161~166所激發的多重模態為同一模態時,可藉由調整阻抗匹配器,使其激發不同模態。 Similarly, the lengths L 32 , L 34 , L 36 , L 38 , L 40 , and L 42 of the six transverse waveguides 161 to 166 are all different. That is, L 32 ≠ L 34 ≠ L 36 ≠ L 38 ≠ L 40 ≠ L 42 . Therefore, as long as the number of multiple natural modes in the heating chamber 110 is sufficient, the multiple natural modes excited by the six transverse waveguides 161 to 166 can be made different. Therefore, the implementation of this embodiment can achieve the purpose of uniform heating. In this embodiment, an impedance matcher (not shown) is not an essential component, but can be used when the following conditions occur: (1). When the reflected power of the microwave transmitters 131 ~ 142 is very large, the impedance can be determined by the impedance The matcher lowers it. (2). When the multiple modes excited by some waveguides 151 ~ 156, 161 ~ 166 are the same mode, the impedance matcher can be adjusted to excite different modes.

圖1B-1、圖1B-2、圖1B-3、圖1B-4、圖1B-5以及圖1B-6是依照本發明第一實施例的多重模態微波加熱裝置的電源電路配置圖。其中,在一實施例中,圖1B-1、圖1B-2以及圖1B-3的電源電路配置的目的是為了使圖1A-1、圖1A-2的微波發射機131~142得以依時間順序(時序控制、或稱時序操作方法,Serial mode)發射微波,彼此互不干涉。此外,本實施例的電源電路的實施方法乃是使用如圖1B-1所示的工業用的三相交流電源170,其以圖1B-2的△接電源172並聯圖1B-3所示的Y接電源174分別供電於半波整流電源供應器190。然後,藉由半波整流電源供應器190供電至各個微波發射機131~142。詳細而言,工業用的三相交流電源170的三個接點分別以R、S、T表示,故可提供R-S、S-T、T-R三重相位之電力,並且彼此時域相位相差120度。此外,經由半波整流,可以產生R-S、S-T、T-R、S-R、T-S、R-T六重相位之電力,並且彼此時域相位相差60度,以形成△接電源172。 1B-1, FIG. 1B-2, FIG. 1B-3, FIG. 1B-4, FIG. 1B-5, and FIG. 1B-6 are configuration diagrams of a power circuit of a multi-mode microwave heating device according to a first embodiment of the present invention. Among them, in an embodiment, the power circuit configuration of FIG. 1B-1, FIG. 1B-2, and FIG. 1B-3 is to enable the microwave transmitters 131 to 142 of FIG. 1A-1 and FIG. 1A-2 to be timed. The sequence (sequence control, or serial operation method, Serial mode) emits microwaves without interfering with each other. In addition, the implementation method of the power supply circuit of this embodiment uses an industrial three-phase AC power supply 170 as shown in FIG. 1B-1, which is connected in parallel with the power supply 172 shown in FIG. 1B-2 as shown in FIG. 1B-3. The Y-connected power sources 174 are respectively supplied to the half-wave rectified power supply 190. Then, the microwave transmitters 131 to 142 are powered by the half-wave rectified power supply 190. In detail, the three contacts of the industrial three-phase AC power supply 170 are respectively represented by R, S, and T, so they can provide three-phase power of R-S, S-T, and T-R, and their phases in time domain differ by 120 degrees. In addition, through half-wave rectification, R-S, S-T, T-R, S-R, T-S, and R-T six-phase power can be generated, and the time-phase phase difference of each other is 60 degrees, so as to form a △ connected power source 172.

此外,如圖1B-1的圖式所示,三相交流電源170上可以選取一共接點C,從而產生R-C、S-C、T-C三重相位之電力,並且彼此時域相位相差120度。此外,經由半波整流,可以產生R-C、 S-C、T-C、C-R、C-S、C-T六重相位之電力,並且彼此時域相位相差60度,以形成Y接電源174。因此,△接電源172並聯Y接電源174,再經由半波整流,共可產生R-S、R-C、S-T、S-C、T-R、T-C、S-R、C-R、T-S、C-S、R-T、C-T十二重相位的電力,並且彼此時域相位相差30度。前述十二重相位的電力可分別為圖1B-2與圖1B-3,其中共有十二個半波整流電源供應器190。圖1B-2與圖1B-3中的每個半波整流電源供應器190如圖1B-4所示,其中包含有電容器191,例如一可變電容器。藉由調整每個半波整流電源供應器190的電容器191之電容值,能使所連接的微波發射機131~142發出的微波波形頻寬擴大到產生複數重疊耦合(coupling),即可達成微波模態的倍增。請參照圖1B-5,其顯示時序控制配合耦合控制(Coupling mode)的操作方法。 In addition, as shown in the diagram of FIG. 1B-1, a common contact C can be selected on the three-phase AC power supply 170 to generate R-C, S-C, and T-C triple-phase power, and the phases in time domain differ from each other by 120 degrees. In addition, through half-wave rectification, R-C, S-C, T-C, C-R, C-S, C-T six-phase power, and the time domain phase difference between each other by 60 degrees to form a Y-connected power source 174. Therefore, △ connected to power supply 172 and Y connected to power supply 174 in parallel, and then through half-wave rectification, can generate twelve-phase power of RS, RC, ST, SC, TR, TC, SR, CR, TS, CS, RT, and CT. , And they are 30 degrees out of phase with each other in time domain. The aforementioned twelve-phase power can be respectively shown in FIGS. 1B-2 and 1B-3. There are twelve half-wave rectified power supplies 190 in total. Each half-wave rectified power supply 190 in FIG. 1B-2 and FIG. 1B-3 is shown in FIG. 1B-4, which includes a capacitor 191, such as a variable capacitor. By adjusting the capacitance of the capacitor 191 of each half-wave rectified power supply 190, the bandwidth of the microwave waveforms emitted by the connected microwave transmitters 131 to 142 can be expanded to produce complex overlapping coupling, and the microwave can be achieved. Modal doubling. Please refer to FIG. 1B-5, which shows the operation method of timing control and coupling mode.

具體而言,當調整過電容值的十二個半波整流電源供應器190分別供應電力至十二個微波發射機131~142,使得十二個微波發射機131~142得以依時間順序(時序控制)發射微波,十二個導波管可產生二十四個模態,也就是如圖1B-5所示的二十四重相位;也就是說,微波模態倍增了24個,因此從12個模態增加成為36個模態,故,二十四個導波管總計產生七十二個模態。藉由倍增微波模態數量,耦合控制的操作方法較時序控制倍增了加熱效率以及均勻度。 Specifically, when the twelve half-wave rectified power supplies 190 whose capacitance values have been adjusted supply power to the twelve microwave transmitters 131 to 142, respectively, the twelve microwave transmitters 131 to 142 can be ordered in time (sequence Control) Transmitting microwaves, twelve waveguides can produce twenty-four modes, which is the twenty-four phase shown in Figure 1B-5; that is, the microwave modes are multiplied by 24, so from Twelve modes have increased to 36 modes, so a total of seventy-two modes are generated by the twenty-four waveguides. By doubling the number of microwave modalities, the operation method of the coupling control doubles the heating efficiency and uniformity compared with the timing control.

此外,由於十二個微波發射機131~142是以依時間順序(時序控制)發射微波,並且在同一時間內,僅有一個微波發射機發 射微波。因此,在未裝置隔離器的情形之下,各微波發射機131~142之間並無互相干涉而鎖模(mode lock)的可能。故,微波發射機131~142的效率不會降低。同時,只要每個微波發射機131~142所對應的導波管151~156、161~166皆激發加熱腔室110的多重固有模態,既使在不裝置隔離器的情形下,各微波發射機131~142承受的反射功率也不至過大。因此,微波發射機131~142效率不會降低。此外,由於本實施例的配置方式不需另外裝置隔離器,因此可排除干涉功率耗損的情形,進而提升多重模態微波加熱裝置100的加熱效率。 In addition, since the twelve microwave transmitters 131 to 142 transmit microwaves in time sequence (sequence control), and only one microwave transmitter transmits at the same time. Shoot microwave. Therefore, without an isolator, the microwave transmitters 131 to 142 do not interfere with each other and may be in mode lock. Therefore, the efficiency of the microwave transmitters 131 to 142 will not be reduced. At the same time, as long as the waveguides 151 to 156 and 161 to 166 corresponding to each of the microwave transmitters 131 to 142 excite the multiple natural modes of the heating chamber 110, even without an isolator, each microwave transmission The reflected power of the cameras 131 ~ 142 is not too large. Therefore, the efficiency of the microwave transmitters 131 to 142 will not be reduced. In addition, since the arrangement of this embodiment does not require an additional isolator, the situation of interference power loss can be eliminated, thereby improving the heating efficiency of the multi-modal microwave heating device 100.

又一實施例中,當半波整流電源供應器的電容值持續調整使得微波發射機發出的微波功率波形頻寬擴大到產生更多複數重疊耦合,例如倍增達48個,如圖1B-6所示,則從12個模態便增加成為60個模態,故,二十四個導波管總計可產生一百二十個模態。 In another embodiment, when the capacitance value of the half-wave rectified power supply is continuously adjusted, the bandwidth of the microwave power waveform emitted by the microwave transmitter is expanded to generate more complex overlapping couplings, such as 48 multiplications, as shown in Figure 1B-6. As shown in the figure, the number of modes is increased from 12 modes to 60 modes. Therefore, twenty-four waveguides can generate a total of 120 modes.

圖2A是依照本發明的第一實施例的多重縱向奇模態的激發方式的示意圖。第一微波發射機131可經由同相位等功率分配器180及兩個縱向波導波管151a輸入微波至加熱腔室110中。縱向波導波管151a與加熱腔室110的連接處定義為微波輸入埠(port),如圖2A所示,以細箭頭符號標註,並且分別以輸入埠111a與輸入埠111b標示之。在輸入埠111b與同相位等功率分配器180之間可裝置180度相位移轉器185。但是,輸入埠111a與同相位等功率分配器180之間則未裝置180度相位移轉器185。因此,抵 達輸入埠111a的縱向電場相位與抵達埠111b的縱向電場相位相差180度(其縱向電場極化方向分別以⊙與符號標示之,以表示電場極化方向垂直xy平面,並且相位相差180度)。因此,在加熱腔室110的中央線(x軸)上將形成破壞性干涉,稱之為多重縱向奇模態。多重縱向奇模態的縱向電場強度分布經由模擬器模擬的結果如圖2A中的右方圖式所示。在本實施例中,阻抗匹配器(未繪示)並非是必要元件,但可在下述情況發生時使用:當微波發射機131承受的反射功率較大時,可在微波發射機131與同相位等功率分配器180之間裝置阻抗匹配器,從而調降反射功率。 FIG. 2A is a schematic diagram of an excitation method of multiple longitudinal odd modes according to the first embodiment of the present invention. The first microwave transmitter 131 can input microwaves into the heating chamber 110 through the in-phase equal-power divider 180 and the two longitudinal waveguide tubes 151a. The connection between the longitudinal waveguide 151a and the heating chamber 110 is defined as a microwave input port, as shown in FIG. 2A, marked with a thin arrow symbol, and respectively marked with an input port 111a and an input port 111b. A 180-degree phase shift converter 185 may be installed between the input port 111b and the power splitter 180 of the same phase. However, a 180-degree phase shift converter 185 is not provided between the input port 111a and the power splitter 180 of the same phase. Therefore, the phase of the vertical electric field arriving at the input port 111a differs from the phase of the vertical electric field arriving at the port 111b by 180 degrees (the direction of polarization of the vertical electric field is Symbols are used to indicate that the direction of electric field polarization is perpendicular to the xy plane, and the phases are 180 degrees apart). Therefore, a destructive interference will be formed on the center line (x-axis) of the heating chamber 110, which is called a multiple longitudinal odd mode. The simulation results of the longitudinal electric field intensity distribution of the multiple longitudinal odd modes via the simulator are shown in the right diagram in FIG. 2A. In this embodiment, an impedance matcher (not shown) is not an essential component, but can be used when the following situations occur: When the reflected power of the microwave transmitter 131 is large, the microwave transmitter 131 can be in phase with the same phase. An impedance matcher is arranged between the equal power dividers 180 to reduce the reflected power.

圖2B是依照本發明的第一實施例的多重縱向偶模態的激發方式的示意圖。在本實施例中,第三微波發射機133可經由同相位等功率分配器180及兩個縱向波導波管152a輸入微波至加熱腔室110中。縱向波導波管152a與加熱腔室110的連接處定義為微波輸入埠,以細箭頭號標註,並且分別以輸入埠112a與輸入埠112b標示之。在本實施例中,只要兩個縱向波導波管152a同長,則抵達輸入埠112a的縱向電場相位與抵達輸入埠112b的縱向電場電位相同(其縱向電場極化方向皆以⊙符號標示之)。因此,在加熱腔室110的中央線(y軸)上將形成建設性干涉,稱之為多重縱向偶模態。縱向電場強度分布經由模擬器模擬的結果如圖2B中的右方圖式所示。當然,阻抗匹配器(未繪示)並非是本實施例的必要元件,但可在下述情況發生時使用:當微波發射機133承受的反射功率甚大時,可在微波發射機133與同相位等功率分 配器180之間裝置阻抗匹配器,從而調降反射功率。 FIG. 2B is a schematic diagram of an excitation manner of multiple longitudinal even modes according to the first embodiment of the present invention. In this embodiment, the third microwave transmitter 133 can input microwaves into the heating chamber 110 via the in-phase equal-power divider 180 and the two longitudinal waveguide tubes 152a. The connection between the longitudinal waveguide 152a and the heating chamber 110 is defined as a microwave input port, which is marked with a thin arrow, and is labeled with an input port 112a and an input port 112b, respectively. In this embodiment, as long as the two longitudinal waveguides 152a are the same length, the phase of the vertical electric field reaching the input port 112a is the same as the potential of the vertical electric field reaching the input port 112b (the direction of polarization of the vertical electric field is indicated by the ⊙ symbol). . Therefore, constructive interference will be formed on the center line (y-axis) of the heating chamber 110, which is called multiple longitudinal even modes. The result of the longitudinal electric field intensity distribution simulation via the simulator is shown in the right diagram in FIG. 2B. Of course, the impedance matcher (not shown) is not an essential component of this embodiment, but can be used when the following situations occur: when the reflected power of the microwave transmitter 133 is very large, the microwave transmitter 133 can be Power points An impedance matcher is installed between the distributors 180 to reduce the reflected power.

圖2C是依照本發明的第一實施例的多重橫向奇模態的激發方式的示意圖。在本實施例中,第二微波發射機132可經由同相位等功率分配器180及兩個橫向波導波管161a輸入微波至加熱腔室110中。橫向波導波管161a與加熱腔室110連接處定義為微波輸入埠,以細箭頭符號標註,並分別以輸入埠113a與輸入埠113b標示之。輸入埠113b與同相位等功率分配器180之間可裝置180度相位移轉器185,但輸入埠113a與同相位等功率分配器180之間則未裝置180度相位移轉器185。因此,抵達輸入埠113a的橫向電場相位與抵達輸入埠113b的橫向電場相位之間相差180度(圖2C中,橫向電場以粗箭頭符號標示之,箭頭方向相反表示相位相差180度,並且方向皆與x’y’平面平行)。因此,在加熱腔室110的中央線(z軸)上將形成破壞性干涉,稱之為多重橫向奇模態。橫向電場強度分布經由模擬器模擬的結果如圖2C中的右方圖式所示。在本實施例中,阻抗匹配器並非必要元件,但可在下述情況發生時可使用:當微波發射機132承受的反射功率較大時,可在微波發射機132與同相位等功率分配器180之間裝置阻抗匹配器,從而調降反射功率。 FIG. 2C is a schematic diagram of an excitation manner of multiple lateral odd modes according to the first embodiment of the present invention. In this embodiment, the second microwave transmitter 132 can input microwaves into the heating chamber 110 through the in-phase equal-power divider 180 and two transverse waveguide waveguides 161a. The connection between the transverse waveguide 161a and the heating chamber 110 is defined as a microwave input port, which is marked with a thin arrow symbol, and is labeled with an input port 113a and an input port 113b, respectively. A 180-degree phase shift converter 185 may be installed between the input port 113b and the same-phase equal power divider 180, but a 180-degree phase shift converter 185 is not installed between the input port 113a and the same-phase equal power divider 180. Therefore, the horizontal electric field phase arriving at input port 113a and the horizontal electric field phase arriving at input port 113b differ by 180 degrees (in FIG. 2C, the horizontal electric field is indicated by a thick arrow symbol, and the opposite direction of the arrows indicates that the phase is 180 degrees out of phase, and both directions are Parallel to the x'y 'plane). Therefore, a destructive interference will be formed on the center line (z-axis) of the heating chamber 110, which is called a multiple lateral odd mode. The results of the lateral electric field intensity distribution simulated by the simulator are shown in the right diagram in FIG. 2C. In this embodiment, the impedance matcher is not an essential component, but it can be used when the following conditions occur: When the reflected power of the microwave transmitter 132 is large, the microwave transmitter 132 and the same-phase equal power divider 180 can be used. An impedance matcher is installed between them to reduce the reflected power.

圖2D是依照本發明的第一實施例的多重橫向偶模態的激發方式的示意圖。第四微波發射機134可經由同相位等功率分配器180及兩個橫向波導波管162a輸入微波至加熱腔室110中。橫向波導波管162a與加熱腔室110的連接處定義為微波輸入埠, 以細箭頭符號標註之,並且分別以輸入埠114a及輸入埠114b標示之。在本實施例中,只要兩個橫向波導波管162a同長,則抵達輸入埠114a的橫向電場與抵達輸入埠114b的橫向電場的相位相同(在圖2D中,橫向電場皆以粗箭頭符號標示之)。因此,加熱腔室110的中央線(z軸)上將形成建設性干涉,其可被稱為多重橫向偶模態。橫向電場強度分布經由模擬器模擬之結果如圖2D中的右方圖式所示。當然,在本實施例中,阻抗匹配器並非必要元件,但可在下列情況發生時使用:當微波發射機134承受的反射功率甚大時,可在微波發射機134與同相位等功率分配器180之間裝置阻抗匹配器,從而調降反射功率。 FIG. 2D is a schematic diagram of an excitation manner of multiple transverse even modes according to the first embodiment of the present invention. The fourth microwave transmitter 134 can input microwaves into the heating chamber 110 through the in-phase equal-power divider 180 and two transverse waveguide tubes 162a. The connection between the transverse waveguide 162a and the heating chamber 110 is defined as a microwave input port. It is marked with a thin arrow symbol, and it is marked with an input port 114a and an input port 114b, respectively. In this embodiment, as long as the two transverse waveguides 162a are the same length, the phase of the lateral electric field reaching the input port 114a is the same as that of the lateral electric field reaching the input port 114b. (). Therefore, constructive interference will be formed on the center line (z-axis) of the heating chamber 110, which may be referred to as multiple lateral even modes. The results of the lateral electric field intensity distribution simulated by the simulator are shown in the right diagram in FIG. 2D. Of course, in this embodiment, the impedance matcher is not an essential component, but it can be used in the following situations: When the reflected power of the microwave transmitter 134 is very large, the microwave transmitter 134 and the same-phase equal power divider 180 can be used. An impedance matcher is installed between them to reduce the reflected power.

圖2E是依照本發明的第一實施例的合併多重縱向奇模態與多重縱向偶模態的激發方式的示意圖。如圖2E所示,本實施例是合併圖2A的多重縱向奇模態與圖2B的多重縱向偶模態。舉例而言,在圖2E中,多重縱向奇模態的兩個輸入埠111a與111b在y軸上。此外,多重縱向偶模態的兩個輸入埠112a與112b在x軸上。多重縱向奇模態與多重縱向偶模態兩者正交,故保有x方向與y方向上之對稱性。 FIG. 2E is a schematic diagram of an excitation manner combining multiple longitudinal odd modes and multiple longitudinal even modes according to the first embodiment of the present invention. As shown in FIG. 2E, this embodiment combines the multiple longitudinal odd modes of FIG. 2A with the multiple longitudinal even modes of FIG. 2B. For example, in FIG. 2E, the two input ports 111 a and 111 b in the multiple longitudinal odd modes are on the y-axis. In addition, the two input ports 112a and 112b of the multiple longitudinal even modes are on the x-axis. The multiple longitudinal odd modes and the multiple longitudinal even modes are orthogonal, so the symmetry in the x direction and the y direction is maintained.

圖2F是依照本發明的第一實施例的合併多重橫向奇模態與多重橫向偶模態的激發方式的示意圖。如圖2F所示,本實施例是合併圖2C的多重橫向奇模態及圖2D的多重橫向偶模態。舉例而言,在圖2F中,多重橫向奇模態的兩個輸入埠113a與113b在y’軸上。此外,多重橫向偶模態的兩個輸入埠114a與114b在x’ 軸上。多重橫向偶模態與多重橫向奇模態兩者正交,故保有x’方向與y’方向上的對稱性。再者,多重橫向模態與多重縱向模態彼此正交,故保有x方向與y方向之對稱性。在本實施例中,x'y’座標為xy座標繞z軸旋轉45度的新座標。 FIG. 2F is a schematic diagram of an excitation method combining multiple transverse odd modes and multiple transverse even modes according to the first embodiment of the present invention. As shown in FIG. 2F, this embodiment combines the multiple horizontal odd modes of FIG. 2C and the multiple horizontal even modes of FIG. 2D. For example, in FIG. 2F, the two input ports 113a and 113b in multiple lateral odd modes are on the y 'axis. In addition, the two input ports 114a and 114b of the multiple transverse even mode are at x ’ On the shaft. The multiple transverse even modes and the multiple transverse odd modes are orthogonal, so the symmetry in the x 'direction and the y' direction is maintained. Furthermore, the multiple transverse modes and the multiple longitudinal modes are orthogonal to each other, so the symmetry of the x-direction and the y-direction is maintained. In this embodiment, the x'y 'coordinate is a new coordinate in which the xy coordinate is rotated 45 degrees around the z axis.

圖2G是依照本發明的第一實施例的合併多重縱向奇模態、多重縱向偶模態、多重橫向奇模態以及多重橫向偶模態的激發方式的示意圖。在本實施中,第一組多重縱向奇模態、多重縱向偶模態、多重橫向奇模態以及多重橫向偶模態之輸入埠分別為:輸入埠111a、輸入埠111b、輸入埠112a、輸入埠112b、輸入埠113a,輸入埠113b、輸入埠114a以及輸入埠114b。為求簡明起見,圖2G僅標示上述八個輸入埠及電場極化方向,上述的八個輸入埠所對應的四個微波發射機則未繪出。 FIG. 2G is a schematic diagram of an excitation method combining multiple longitudinal odd modes, multiple longitudinal even modes, multiple transverse odd modes, and multiple transverse even modes according to the first embodiment of the present invention. In this implementation, the input ports of the first group of multiple vertical odd modes, multiple vertical even modes, multiple horizontal odd modes, and multiple horizontal even modes are: input port 111a, input port 111b, input port 112a, input Port 112b, input port 113a, input port 113b, input port 114a, and input port 114b. For the sake of simplicity, FIG. 2G only indicates the above eight input ports and the direction of electric field polarization. The four microwave transmitters corresponding to the above eight input ports are not shown.

圖2H是依照本發明的第二實施例的多重模態微波加熱裝置的立體透視圖。在圖2H中,細箭頭表示微波輸入方向,而以粗箭頭表示電場極化方向。本實施例的多重模態微波加熱裝置200合併了三組多重縱向奇模態、多重縱向偶模態、多重橫向奇模態以及多重橫向偶模態的激發方式。第一組的多重縱向奇模態、多重縱向偶模態、多重橫向奇模態以及多重橫向偶模態的輸入埠分別為:輸入埠201a、輸入埠201b、輸入埠202a、輸入埠202b、輸入埠203a、輸入埠203b、輸入埠204a以及輸入埠204b。前述的輸入埠分別由加熱腔室210的中段輸入微波。第二組的多重縱向奇模態、多重縱向偶模態、多重橫向奇模態以及多重橫向偶模 態的輸入埠分別為:輸入埠205a、輸入埠205b、輸入埠206a、輸入埠206b、輸入埠207a、輸入埠207b、輸入埠208a、輸入埠208b。前述的輸入埠分別由加熱腔室210的上段輸入微波。第三組多重縱向奇模態、多重縱向偶模態、多重橫向奇模態以及多重橫向偶模態的輸入埠分別為:輸入埠209a、輸入埠209b、輸入埠210a、輸入埠210b、輸入埠211a、輸入埠211b、輸入埠212a以及輸入埠212b。前述的輸入埠分別由加熱腔室210下段輸入微波。為求簡明起見,圖2H僅標示上述二十四個輸入埠以及電場極化方向,而上述輸入埠所對應的十二個微波發射機則未繪出。 2H is a perspective view of a multi-modal microwave heating device according to a second embodiment of the present invention. In FIG. 2H, the thin arrow indicates the microwave input direction, and the thick arrow indicates the electric field polarization direction. The multi-mode microwave heating device 200 of this embodiment combines three sets of multiple longitudinal odd modes, multiple longitudinal even modes, multiple transverse odd modes, and multiple transverse even modes. The first group of multiple vertical odd modal, multiple vertical even modal, multiple horizontal odd modal, and multiple horizontal even modal input ports are: input port 201a, input port 201b, input port 202a, input port 202b, input Port 203a, input port 203b, input port 204a, and input port 204b. The aforementioned input ports input microwaves from the middle section of the heating chamber 210, respectively. Multiple longitudinal odd modes, multiple longitudinal even modes, multiple transverse odd modes, and multiple transverse even modes of the second group The state input ports are: input port 205a, input port 205b, input port 206a, input port 206b, input port 207a, input port 207b, input port 208a, input port 208b. The aforementioned input ports input microwaves from the upper section of the heating chamber 210, respectively. The third group of multiple vertical odd modal, multiple vertical even modal, multiple horizontal odd modal, and multiple horizontal even modal input ports are: input port 209a, input port 209b, input port 210a, input port 210b, input port 211a, input port 211b, input port 212a, and input port 212b. The aforementioned input ports input microwaves from the lower section of the heating chamber 210, respectively. For the sake of simplicity, FIG. 2H only indicates the above-mentioned twenty-four input ports and the direction of electric field polarization, and the twelve microwave transmitters corresponding to the above-mentioned input ports are not shown.

本實施例的電源電路配置與圖1B-1的第一實施例相同。因此,本實施例的十二個微波發射機得以依時間順序(時序控制)發射微波。在同一時段內,僅有一個微波發射機發射微波。因此,在無需裝置隔離器的情形下,各微波發射機之間並無相互干涉而鎖模的可能。因此,微波發射機的效率不會降低。同時,只要每個微波發射機所對應的導波管皆激發加熱腔室210的多重固有模態,則在無需裝置隔離器的情形下,即可使微波發射機所承受的反射功率不致過大。此外,由於本實施例的配置方式,無需另外配置隔離器,從而排除來自於其他微波發射機的功率耗損,進而提升加熱效率。 The power supply circuit configuration of this embodiment is the same as the first embodiment of FIG. 1B-1. Therefore, the twelve microwave transmitters of this embodiment can transmit microwaves in time sequence (sequence control). During the same period, only one microwave transmitter transmitted microwaves. Therefore, without the need for an isolator, the microwave transmitters do not interfere with each other to lock the mode. Therefore, the efficiency of the microwave transmitter is not reduced. At the same time, as long as the waveguide corresponding to each microwave transmitter excites the multiple natural modalities of the heating chamber 210, the reflected power that the microwave transmitter can withstand without requiring an isolator is not excessive. In addition, due to the configuration of this embodiment, there is no need to configure an isolator separately, thereby eliminating power loss from other microwave transmitters, thereby improving heating efficiency.

圖3A是依照本發明的第三實施例的多重模態微波加熱裝置的示意圖。六個微波發射機331~336分別與六個縱向波導波管351~356,以間隔60度角的方式連結至加熱腔室310,六個縱 向波導波管351~356的長度L1、L2、L3、L4、L5、L6各不相同,並且滿足L6-L5=L5-L4=L4-L3=L3-L2=L2-L1g/12。也就是,相鄰的縱向波導波管351~356之間的長度差為導波管波長λg的十二分之一,使得各微波發射機331~336與其相連接的縱向波導波管351~356的接面處(定義為本實施例的輸入埠)的輸入阻抗Zin1、Zin2、Zin3、Zin4、Zin5、Zin6各不相同。也就是,Zin1≠Zin2≠Zin3≠Zin4≠Zin5≠Zin6,從而造成各發射機的頻率牽引程度各不相同。在本實施例中,只要加熱腔室310夠大,則其多重固有模態數就夠多,使得各個被牽引頻率略不相同的微波發射機331~336連通相對應的導波管351~356,其所激發的多重固有模態各不相同,進而達到多重模態均勻加熱的目的。 3A is a schematic diagram of a multi-modal microwave heating device according to a third embodiment of the present invention. The six microwave transmitters 331 to 336 and the six longitudinal waveguides 351 to 356 are respectively connected to the heating chamber 310 at an angle of 60 degrees. The lengths of the six longitudinal waveguides 351 to 356 are L 1 and L 2. , L 3 , L 4 , L 5 , and L 6 are all different and satisfy L 6 -L 5 = L 5 -L 4 = L 4 -L 3 = L 3 -L 2 = L 2 -L 1 = λ g / 12. That is, the length difference between the adjacent longitudinal waveguide waveguides 351 to 356 is one twelfth of the wavelength λ g of the waveguide, so that each microwave transmitter 331 to 336 is connected to the longitudinal waveguide waveguides 351 to 351. junction 356 at the input impedance Z in1 (input port embodiment of the present embodiment is defined) of, Z in2, Z in3, Z in4, Z in5, Z in6 vary. That is, Z in1 ≠ Z in2 ≠ Z in3 ≠ Z in4 ≠ Z in5 ≠ Z in6, resulting in pulling extent of each transmitter frequency varies. In this embodiment, as long as the heating chamber 310 is large enough, the number of multiple natural modes is sufficient, so that each of the microwave transmitters 331 to 336 with slightly different traction frequencies communicate with the corresponding waveguides 351 to 356. The multiple natural modes excited by them are different, so as to achieve the purpose of uniform heating of multiple modes.

圖3B是圖3A的縱向電場強度分布的模擬結果的示意圖。由於六個微波發射機331~336中當某一個微波發射機輸入微波的同時,其他五個微波發射機是休止的,故每次僅設定一個輸入埠輸入微波,其餘五個輸入埠則設為短路面。舉例而言,如圖3B中左上方的圖式所示,微波可經由輸入埠311輸入微波,而其餘五個輸入埠312~316則設為短路面。圖3B模擬結果顯示,圖3A中各個頻率略不相同的微波發射機331~336連通相對應的縱向波導波管351~356,其所激發的多重固有模態各不相同。 FIG. 3B is a schematic diagram of a simulation result of the longitudinal electric field intensity distribution of FIG. 3A. Since one of the six microwave transmitters 331 to 336 is inputting microwaves, the other five microwave transmitters are inactive, so only one input port is set to input microwaves at a time, and the remaining five input ports are set to Short-circuit surface. For example, as shown in the upper left diagram in FIG. 3B, the microwave can be input to the microwave through the input port 311, and the remaining five input ports 312 to 316 are set as short-circuit surfaces. The simulation results in FIG. 3B show that the microwave transmitters 331 to 336 with slightly different frequencies in FIG. 3A communicate with the corresponding longitudinal waveguides 351 to 356, and the multiple natural modes excited by them are different.

在本實施例中,電源電力的配置可依照圖1B-1的第一實施例,以工業用的三相交流電源170選擇△接電源172或Y接電源174供電於六個半波整流電源供應器190,再由六個半波整流電 源供應器190供電至六個微波發射機331~336。 In this embodiment, the configuration of the power source can be in accordance with the first embodiment of FIG. 1B-1. A three-phase AC power source 170 for industrial use is selected. The delta power source 172 or the Y power source 174 is used to supply six half-wave rectified power supplies. 190, and then rectified by six half-waves The source supplier 190 supplies power to six microwave transmitters 331-336.

圖3C是依照本發明的第三實施例的另一實施方式的示意圖。在本實施例中,12個微波發射機431~442分別以六個縱向波導波管451~456及六個橫向波導波管461~466,並以間隔30度角的方式連結至加熱腔室410。縱向波導波管451~456的長度L12、L14、L16、L18、L20、L22各不相同,但滿足L22-L20=L20-L18=L18-L16=L16-L14=L14-L12g/12。也就是,相鄰的縱向波導波管451~456的長度差為導波管波長λg的十二分之一,使得各微波發射機432、434、436、438、440、442與其相連結的縱向波導波管451~456的接面處(定義為本實施例的輸入埠)的輸入阻抗Zin12、Zin14、Zin16、Zin18、Zin20、Zin22各不相同,亦即Zin12≠Zin14≠Zin16≠Zin18≠Zin20≠Zin22,從而造成各微波發射機432、434、436、438、440、442的頻率牽引程度各不相同。 FIG. 3C is a schematic diagram of another embodiment according to a third embodiment of the present invention. In this embodiment, the twelve microwave transmitters 431 to 442 are respectively connected to the heating chamber 410 by six longitudinal waveguide tubes 451 to 456 and six transverse waveguide tubes 461 to 466, with an interval of 30 degrees. . The lengths L 12 , L 14 , L 16 , L 18 , L 20 , and L 22 of the longitudinal waveguides 451 to 456 are different, but satisfy L 22 -L 20 = L 20 -L 18 = L 18 -L 16 = L 16 -L 14 = L 14 -L 12 = λ g / 12. That is, the difference in length between adjacent longitudinal waveguides 451 to 456 is one twelfth of the wavelength λ g of the waveguide, so that each microwave transmitter 432, 434, 436, 438, 440, 442 is connected to it. The input impedances Z in12 , Z in14 , Z in16 , Z in18 , Z in20 , and Z in22 at the interfaces of the longitudinal waveguides 451 to 456 (defined as the input ports of this embodiment) are different, that is, Z in12 ≠ Z in14 ≠ Z in16 ≠ Z in18 ≠ Z in20 ≠ Z in22 , which results in different degrees of frequency pulling of each microwave transmitter 432, 434 , 436 , 438 , 440 , 442.

同理,本實施方式的橫向波導波管461~466的長度L13、L15、L17、L19、L21也各不相同,其滿足L21-L19=L19-L17=L17-L15=L15-L13=L13-L11g/12。也就是,相鄰的橫向波導波管461~466的長度差為導波管波長λg的十二分之一,使得各微波發射機431、433、435、437、439、441與其相連結的橫向波導波管461~466接面處(定義為此實施例的輸入埠)的輸入阻抗Zin11、Zin13、Zin15、Zin17、Zin19、Zin21各不相同,亦即Zin11≠Zin13≠Zin15≠Zin17≠Zin19≠Zin21,從而造成各微波發射機431、433、435、437、439、441的頻率牽引程度各不相同。因此,在本實施方式中,只要加熱腔室410夠 大,則其多重固有模態數就夠多,可使得各個被牽引頻率之程度略不相同的微波發射機431~442連通相對應的導波管451~456、461~466,其所激發的多重固有模態各不相同,進而達到多重模態均勻加熱的目的。 Similarly, the lengths L 13 , L 15 , L 17 , L 19 , and L 21 of the transverse waveguides 461 to 466 of this embodiment are also different, which satisfy L 21 -L 19 = L 19 -L 17 = L 17 -L 15 = L 15 -L 13 = L 13 -L 11 = λ g / 12. That is, the length difference between the adjacent transverse waveguides 461 to 466 is one twelfth of the wavelength λ g of the waveguide, so that each of the microwave transmitters 431, 433, 435, 437, 439, and 441 is connected to it. The input impedances Zin11 , Zin13 , Zin15 , Zin17 , Zin19 , and Zin21 at the interfaces of the transverse waveguides 461 to 466 (defined as the input ports of this embodiment) are different, that is, Z in11 ≠ Z in13 ≠ Z in15 ≠ Z in17 ≠ Z in19 ≠ Z in21 , which results in different degrees of frequency pulling of each microwave transmitter 431, 433 , 435 , 437 , 439 , 441. Therefore, in this embodiment, as long as the heating chamber 410 is large enough, the number of multiple natural modalities is sufficient, and the microwave transmitters 431 to 442 having different degrees of traction frequency can communicate with the corresponding guides. The wave tubes 451 to 456 and 461 to 466 have different multiple natural modes excited by them, thereby achieving the purpose of uniform heating of multiple modes.

本實施方式的電源電力配置可完全依照圖1B-1的第一實施例,以工業用的三相交流電源170以△接電源172並聯Y接電源174供電至十二個半波整流電源供應器(未繪示),再由該十二個半波整流電源供應器供電至該十二個微波發射機431~442。 The power configuration of the power supply in this embodiment can be completely in accordance with the first embodiment of FIG. 1B-1. The industrial three-phase AC power supply 170 is connected to the power supply 172 in parallel to the Y power supply 174 to supply twelve half-wave rectified power supplies. (Not shown), and then power is supplied from the twelve half-wave rectifier power supplies to the twelve microwave transmitters 431 to 442.

圖4是依照本發明的第四實施例的多重模態微波加熱裝置的示意圖。本實施例概述多重模態微波加熱裝置500以捲軸570對捲軸(roll to roll)連續式地帶動輸送帶575以輸送被加熱物件50沿圖4中的箭頭方向前進的加熱實施方法。多重模態微波加熱裝置500可具有多個(圖4僅舉例繪示三個)加熱腔室511、512、513以及多組(圖4僅舉例繪示三組)十二重微波發射機531、532、533,其分別具有十二個微波發射機1~12、1’~12’、1”~12”,並且每一組微波發射機分別搭配六個縱向波導波管以及六個橫向波導波管(未繪示)。在本實施例中,每一組的導波管與加熱腔室511、512、513的連接方式可參考上述的多個實施例並且擇一而實施之。此外,加熱腔室511、512、513的出入口以及其之間可配置多個低通濾波器580,以遏止高頻微波洩漏至外界或干涉相鄰的腔室中的多重固有模態。 FIG. 4 is a schematic diagram of a multi-modal microwave heating apparatus according to a fourth embodiment of the present invention. This embodiment outlines a heating implementation method in which the multi-modal microwave heating device 500 continuously drives a conveyor belt 575 with a reel 570 to a roll to convey a heated object 50 in the direction of the arrow in FIG. 4. The multi-modal microwave heating device 500 may have a plurality (only three are shown in FIG. 4 as examples) of heating chambers 511, 512, 513 and a plurality of groups (only three are shown in FIG. 4 as examples). 532, 533, which have twelve microwave transmitters 1-12, 1 '~ 12', 1 "~ 12", and each group of microwave transmitters is equipped with six longitudinal waveguides and six transverse waveguides Tube (not shown). In this embodiment, the connection modes of the waveguides of each group and the heating chambers 511, 512, and 513 can be implemented by referring to the above embodiments and selecting one of them. In addition, a plurality of low-pass filters 580 can be arranged at the entrances and exits of the heating chambers 511, 512, and 513 to prevent high-frequency microwaves from leaking to the outside or interfering with multiple natural modes in adjacent chambers.

在本實施例中,電源電力配置的方式可依照圖1B-1中 的第一實施例,以工業用的三相交流電源170選擇△接電源172或Y接電源174供電於每組十二個半波整流電源供應器,再由十二個半波整流電源供應器供電至每一組十二重微波發射機。由於每個加熱腔室511、512、513之間藉由低通濾波器580阻隔微波干涉,故每組的發射機之間並無干涉而導致磁控管鎖模(mode lock)的可能,以確保每個微波發射機的效率以及多重固有模態的多樣性。 In this embodiment, the manner of power source power allocation can be according to FIG. 1B-1 The first embodiment of the invention uses industrial three-phase AC power supply 170 to choose △ power supply 172 or Y power supply 174 to power each group of twelve half-wave rectified power supplies, and then twelve half-wave rectified power supplies Power is supplied to each group of twelve duplex microwave transmitters. Because each heating chamber 511, 512, 513 blocks microwave interference by a low-pass filter 580, there is no interference between the transmitters of each group, which may cause the possibility of a magnetron mode lock. Ensure the efficiency of each microwave transmitter and the diversity of multiple intrinsic modes.

圖5說明依照本發明的第五實施例的微波加熱裝置的操作方法之步驟圖。 FIG. 5 is a step diagram illustrating a method of operating a microwave heating apparatus according to a fifth embodiment of the present invention.

於步驟S101中,在加熱腔室中的容置空間提供一載台,載台的一平面用以承載一微波受熱物件。 In step S101, a carrier is provided in the accommodating space in the heating chamber, and a plane of the carrier is used to carry a microwave heated object.

於步驟S102中,於加熱腔室外設置多個微波發射機用以發射微波。 In step S102, a plurality of microwave transmitters are set outside the heating cavity for transmitting microwaves.

於步驟S103中,設置多個半波整流電源供應器,耦接至所述多個微波發射機,所述半波整流電源供應器各別包含有電容器,所述電容器例如為一可變電容器。至於半波整流電源供應器的個數與操作可參照以上實施例,故不再贅述。 In step S103, a plurality of half-wave rectified power supplies are provided and coupled to the plurality of microwave transmitters. The half-wave rectified power supplies each include a capacitor, and the capacitor is, for example, a variable capacitor. As for the number and operation of the half-wave rectified power supplies, reference may be made to the above embodiments, and details are not described herein again.

於步驟S104中,於加熱腔室與相應的微波發射機之間,分別連接縱向波導波管與橫向波導波管,其中各縱向波導波管中的電場極化方向垂直於載台的上述平面,各橫向波導波管中的電場極化方向平行於載台的上述平面。至於縱向波導波管與橫向波導波管的設置可參照以上實施例,故不再贅述。 In step S104, the longitudinal waveguide tube and the transverse waveguide tube are respectively connected between the heating chamber and the corresponding microwave transmitter, wherein the direction of the electric field polarization in each longitudinal waveguide tube is perpendicular to the plane of the carrier, The direction of electric field polarization in each transverse waveguide is parallel to the above-mentioned plane of the stage. As for the arrangement of the longitudinal waveguide tube and the transverse waveguide tube, reference may be made to the above embodiments, and details are not described herein again.

於步驟S105中,調整所述多個半波整流電源供應器各別電容器的電容值,使所連接的微波發射機發出的微波波形頻寬擴大到產生複數重疊耦合,達成微波模態的倍增。 In step S105, the capacitance values of the respective capacitors of the plurality of half-wave rectified power supplies are adjusted so that the bandwidth of the microwave waveform emitted by the connected microwave transmitter is expanded to produce complex overlapping coupling, thereby achieving a multiplication of the microwave mode.

於步驟S106中,經由半波整流電源供應器供應電力至微波發射機,使微波藉由縱向波導波管與橫向波導波管傳遞至加熱腔室中,並於加熱腔室中形成多重微波模態,加熱所述微波受熱物件。 In step S106, power is supplied to the microwave transmitter through a half-wave rectified power supply, so that the microwave is transmitted to the heating chamber through the longitudinal waveguide tube and the transverse waveguide tube, and multiple microwave modes are formed in the heating chamber. , Heating the microwave heated object.

圖6說明依照本發明的第六實施例的半導體摻雜物質之微波退火製程步驟。 FIG. 6 illustrates the microwave annealing process steps of a semiconductor doped substance according to a sixth embodiment of the present invention.

於步驟S201中,對一具有摻雜物質之半導體元件,提供一個微波加熱裝置,如以上實施例所述的微波加熱裝置。 In step S201, a semiconductor heating device having a doped substance is provided with a microwave heating device, such as the microwave heating device described in the above embodiment.

於步驟S202中,調整微波加熱裝置之半波整流電源供應器的電容器之電容值,使所連接的微波發射機發出的微波波形頻寬擴大到產生複數重疊耦合,達成微波模態的倍增。 In step S202, the capacitance value of the capacitor of the half-wave rectified power supply of the microwave heating device is adjusted so that the bandwidth of the microwave waveform emitted by the connected microwave transmitter is expanded to produce complex overlapping coupling, thereby achieving a multiplication of the microwave mode.

於步驟S203中,經由半波整流電源供應器供應電力至微波發射機,使微波藉由縱向波導波管與橫向波導波管傳遞至微波加熱裝置之加熱腔室中,並於加熱腔室中形成多重微波模態,對一具有摻雜物質之半導體元件進行退火製程。 In step S203, power is supplied to the microwave transmitter through a half-wave rectified power supply, so that the microwave is transmitted to the heating chamber of the microwave heating device through the longitudinal waveguide tube and the transverse waveguide tube, and is formed in the heating chamber. Multiple microwave modes, an annealing process is performed on a semiconductor device with a doped substance.

以下列舉實驗來驗證本發明的功效,但本發明並不侷限於以下的內容。 Experiments are listed below to verify the efficacy of the present invention, but the present invention is not limited to the following.

實驗例:微波退火製程之微波波形無耦合與有耦合的操作方法結果比較。 Experimental example: Comparison of the results of the non-coupling and coupling methods of the microwave waveform in the microwave annealing process.

在此實驗例中,使用12吋晶圓進行砷(As)之摻雜(退火製程),採用頻率2.45GHz微波頻率;分別對操作方法(1)時序控制模式(依時間順序發射微波,Serial mode)以及操作方法(2)時序配合耦合控制模式(使微波發射機發出的微波波形頻寬擴大到產生複數重疊耦合,達成微波模態的倍增,Coupling mode),進行各項製程品質的比較,結果顯示於下表一。 In this experimental example, arsenic (As) doping (annealing process) was performed using a 12-inch wafer, using a microwave frequency of 2.45 GHz; operating methods (1) timing control mode (transmit microwaves in time sequence, Serial mode) ) And operation method (2) timing coordination coupling control mode (enlarges the bandwidth of the microwave waveform emitted by the microwave transmitter to produce complex overlapping coupling to achieve a doubling of the microwave mode, Coupling mode), compares the quality of various processes, and results Shown in Table 1 below.

由表一可知,在(2)之耦合操作方法下,較(1)之時序操作方法,微波退火時間減少約20%、片電阻值降低約達2.5%,且加熱均勻性提升(不均勻性降低約80%)。 As can be seen from Table 1, under the coupling operation method of (2), compared with the sequential operation method of (1), the microwave annealing time is reduced by about 20%, the sheet resistance value is reduced by about 2.5%, and the heating uniformity is improved (unevenness). (About 80% reduction).

綜上所述,在本發明中,微波發射機藉由縱向波導波管與橫向波導波管連接於加熱腔室,用以輸入微波至加熱腔室內,並於加熱腔室中形成多重固有模態,進而達到均勻加熱的目的。三相交流電源可供應電力至半波整流電源供應器,半波整流電源供應器再分別供應電力至該些微波發射機。藉由加大半波整流電源供應器之電容值,微波波形輸出頻寬加大,使前後波形有所重疊形成耦合,較原先倍增模態數;微波模態數越多,對加熱工件 的均勻性就越佳,亦即可增加晶圓摻雜退火製程或工件之微波加熱之效率與均勻性。 In summary, in the present invention, the microwave transmitter is connected to the heating chamber through the longitudinal waveguide tube and the transverse waveguide tube, and is used to input microwaves into the heating chamber and form multiple natural modes in the heating chamber. , And then achieve the purpose of uniform heating. The three-phase AC power supply can supply power to the half-wave rectified power supply, and the half-wave rectified power supply separately supplies power to the microwave transmitters. By increasing the capacitance value of the half-wave rectifier power supply, the output bandwidth of the microwave waveform is increased, so that the front and rear waveforms overlap and form a coupling, which doubles the number of modal modes. The more the number of microwave modal modes, the more heated the workpiece. The better the uniformity is, it can increase the efficiency and uniformity of the wafer doping annealing process or the microwave heating of the workpiece.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

Claims (20)

一種微波加熱裝置的操作方法,包括:在一加熱腔室中設置一容置空間;提供一載台於該容置空間中,該載台具有一平面,用以承載至少一微波受熱物件;於該加熱腔室外設置多個微波發射機,用以發射微波;設置多個半波整流電源供應器,分別耦接至該些微波發射機,該些半波整流電源供應器中的每一個包含有一電容器;於該加熱腔室與相應的該些微波發射機之間,分別連接多個縱向波導波管與多個橫向波導波管,各該縱向波導波管中的電場極化方向垂直於該載台的該平面,各該橫向波導波管中的電場極化方向平行於該載台的該平面;調整該些半波整流電源供應器中該電容器的電容值,使該些微波發射機發出的微波波形頻寬擴大至產生複數重疊耦合;以及經由該些半波整流電源供應器供應電力至該些微波發射機,使所述微波藉由該些縱向波導波管與該些橫向波導波管傳遞至該加熱腔室中,並於該加熱腔室中形成多重微波模態。A method for operating a microwave heating device includes: setting a receiving space in a heating chamber; providing a carrier in the receiving space, the carrier having a plane for carrying at least one microwave heated object; and A plurality of microwave transmitters are arranged outside the heating cavity for transmitting microwaves; a plurality of half-wave rectified power supplies are provided, respectively coupled to the microwave transmitters, and each of the half-wave rectified power supplies includes a A capacitor; between the heating chamber and the corresponding microwave transmitters, a plurality of longitudinal waveguides and a plurality of transverse waveguides are respectively connected, and the direction of the electric field polarization in each of the longitudinal waveguides is perpendicular to the carrier The plane of the stage, the direction of the electric field polarization in each of the transverse waveguides is parallel to the plane of the stage; the capacitance values of the capacitors in the half-wave rectified power supplies are adjusted so that the microwave transmitters emit The microwave waveform bandwidth is expanded to produce complex overlapping coupling; and the half-wave rectified power supply is used to supply power to the microwave transmitters so that the microwaves pass through the longitudinal waveguide waves TWT transmitted to the heating chamber and the plurality of transverse waveguide, and forming a multi-mode microwave in the heating chamber. 如申請專利範圍第1項所述的操作方法,其中該些縱向波導波管以等功率的形式,分成兩組縱向波導波管,並且彼此相向且對稱地連接於該加熱腔室,以傳遞具有相反的電場相位的所述微波至該加熱腔室的內部,用以於該加熱腔室形成多重縱向奇模態。The operation method according to item 1 of the scope of patent application, wherein the longitudinal waveguides are divided into two groups of longitudinal waveguides in the form of equal power, and are connected to the heating chamber opposite to each other and symmetrically to transfer The microwaves of the opposite electric field phase go to the inside of the heating chamber to form multiple longitudinal odd modes in the heating chamber. 如申請專利範圍第1項所述的操作方法,其中該些縱向波導波管以等功率的形式,分成兩組縱向波導波管,並且彼此相向且對稱地連接於該加熱腔室,以傳遞具有相同的電場相位的所述微波至該加熱腔室的內部,用以於該加熱腔室中形成多重縱向偶模態。The operation method according to item 1 of the scope of patent application, wherein the longitudinal waveguides are divided into two groups of longitudinal waveguides in the form of equal power, and are connected to the heating chamber opposite to each other and symmetrically to transfer The microwaves with the same electric field phase go to the inside of the heating chamber to form multiple longitudinal even modes in the heating chamber. 如申請專利範圍第1項所述的操作方法,其中該些橫向波導波管以等功率的形式,分成兩組橫向波導波管,並且彼此相向且對稱地連接於該加熱腔室,以傳遞具有相反的電場相位的所述微波至該加熱腔室的內部,用以於該加熱腔室中形成多重橫向奇模態。The operation method according to item 1 of the scope of patent application, wherein the transverse waveguides are divided into two groups of transverse waveguides in the form of equal power, and are connected to the heating chamber oppositely and symmetrically to transfer The microwaves of the opposite electric field phase go to the inside of the heating chamber to form multiple transverse odd modes in the heating chamber. 如申請專利範圍第1項所述的操作方法,其中該些橫向波導波管以等功率的形式,分成兩組橫向波導波管,並且彼此相向且對稱地連接於該加熱腔室,以傳遞具有相同的電場相位的所述微波至該加熱腔室的內部,用以於該加熱腔室中形成多重橫向偶模態。The operation method according to item 1 of the scope of patent application, wherein the transverse waveguides are divided into two groups of transverse waveguides in the form of equal power, and are connected to the heating chamber oppositely and symmetrically to transfer The microwaves with the same electric field phase go to the inside of the heating chamber and are used to form multiple transverse even modes in the heating chamber. 如申請專利範圍第1項所述的操作方法,其中該些縱向波導波管以彼此間隔一固定角度連接於該加熱腔室與相應的該些微波發射機之間,以傳遞所述微波至該加熱腔室的內部,用以於該加熱腔室中形成多重橫向偶模態,其中彼此相鄰的該些導波管的長度差為導波管波長的二分之一再除以該些縱向波導波管個數。The operating method according to item 1 of the scope of patent application, wherein the longitudinal waveguides are connected between the heating chamber and the corresponding microwave transmitters at a fixed angle from each other to transfer the microwaves to the The interior of the heating chamber is used to form multiple transverse even modes in the heating chamber. The length difference between the waveguides adjacent to each other is a half of the wavelength of the waveguide and then divided by the longitudinal directions. Number of waveguide tubes. 如申請專利範圍第1項所述的操作方法,其中該些橫向波導波管以彼此間隔一固定角度連接於該加熱腔室與相應的該些微波發射機之間,以傳遞所述微波至該加熱腔室的內部,用以於該加熱腔室中形成多重縱向偶模態,其中彼此相鄰的該些導波管的長度差為導波管波長的二分之一再除以該些橫向波導波管個數。The operation method according to item 1 of the scope of patent application, wherein the transverse waveguides are connected between the heating chamber and the corresponding microwave transmitters at a fixed angle from each other to transfer the microwaves to the The interior of the heating chamber is used to form multiple longitudinal even modes in the heating chamber, wherein the length difference of the waveguides adjacent to each other is one-half of the wavelength of the waveguide and then divided by the transverse directions. Number of waveguide tubes. 如申請專利範圍第1項所述的操作方法,其中該些半波整流電源供應器係為十二個,且調整該電容值之前更包括使用工業用三相電源的三個接點R、S、T以△接電源的形式,分別形成R-S、S-T、T-R、S-R、T-S、R-T六相電力提供給該十二個半波整流電源供應器中的六個。The operating method according to item 1 of the scope of patent application, wherein the number of these half-wave rectified power supplies is twelve, and before adjusting the capacitor value, it includes three contacts R, S using industrial three-phase power. , T are in the form of △ connected power supply, which form RS, ST, TR, SR, TS, RT six-phase power to be supplied to six of the twelve half-wave rectified power supplies. 如申請專利範圍第8項所述的操作方法,其中調整該電容值之前更包括使用該工業用三相電源的三個接點R、S、T以Y接電源的形式共接於一C接點,以分別形成為R-C、S-C、T-C、C-R、C-S、C-T六相電力提供給該十二個半波整流電源供應器中的另外六個。The operating method according to item 8 of the scope of patent application, wherein before adjusting the capacitance value, the three contacts R, S, and T of the industrial three-phase power supply are connected to a C connection in the form of a Y connection power supply. Points to form six phases of RC, SC, TC, CR, CS, and CT to supply the other six of the twelve half-wave rectified power supplies. 如申請專利範圍第1項所述的操作方法,其中該些半波整流電源供應器係為十二個,且調整該電容值之前更包括使用工業用三相電源的三個接點R、S、T以△接電源並聯Y接電源的形式,分別形成R-S、R-C、S-T、S-C、T-C、T-R、C-R、S-R、C-S、T-S、R-T、C-T十二相電力提供給該十二個半波整流電源供應器。The operating method according to item 1 of the scope of patent application, wherein the number of these half-wave rectified power supplies is twelve, and before adjusting the capacitor value, it includes three contacts R, S using industrial three-phase power. T and T are in the form of △ connected to power in parallel with Y connected to power, forming RS, RC, ST, SC, TC, TR, CR, SR, CS, TS, RT, and CT. Rectified power supply. 如申請專利範圍第1項所述的操作方法,其中該電容器為一可變電容器。The operating method according to item 1 of the patent application scope, wherein the capacitor is a variable capacitor. 一種半導體摻雜物質之微波退火製程,包括:提供一個微波加熱裝置,其包含有:一加熱腔室,具有一容置空間;一載台,設置於該容置空間中,該載台具有一平面,用以承載至少一被加熱物件,該被加熱物件係為一具有摻雜物質之半導體元件;多個微波發射機,設置於該加熱腔室外,用以發射微波;多個半波整流電源供應器,分別耦接至該些微波發射機,該些半波整流電源供應器中的每一個包含有一電容器;以及多個縱向波導波管與多個橫向波導波管,分別連接於該加熱腔室與相應的該些微波發射機之間,各該縱向波導波管中的電場極化方向垂直於該載台的該平面,各該橫向波導波管中的電場極化方向平行於該載台的該平面;調整該些半波整流電源供應器中的該電容器的電容值,使該些微波發射機發出的微波波形頻寬擴大至產生複數重疊耦合,倍增微波模態數;以及經由該些半波整流電源供應器供應電力至該些微波發射機,使所述微波藉由該些縱向波導波管與該些橫向波導波管傳遞至該加熱腔室中,並於該加熱腔室中形成多重微波模態,對該具有摻雜物質之半導體元件進行退火製程。A microwave annealing process for a semiconductor doped substance includes: providing a microwave heating device, including: a heating chamber having a receiving space; a carrier disposed in the receiving space, the carrier having a A plane for carrying at least one heated object, the heated object being a semiconductor element with a doped substance; a plurality of microwave transmitters arranged outside the heating cavity to emit microwaves; a plurality of half-wave rectified power sources A power supply respectively coupled to the microwave transmitters, each of the half-wave rectified power supplies includes a capacitor; and a plurality of longitudinal waveguides and a plurality of transverse waveguides are respectively connected to the heating cavity Between the chamber and the corresponding microwave transmitters, the direction of the electric field polarization in each of the longitudinal waveguides is perpendicular to the plane of the carrier, and the direction of the electric field polarization in each of the transverse waveguides is parallel to the carrier. The plane; adjust the capacitance of the capacitors in the half-wave rectified power supplies to expand the microwave waveform bandwidth emitted by the microwave transmitters to produce complex overlapping coupling, Increasing the number of microwave modes; and supplying power to the microwave transmitters through the half-wave rectified power supplies, so that the microwaves are transmitted to the heating chamber through the longitudinal waveguides and the transverse waveguides And forming a multiple microwave mode in the heating chamber, and performing an annealing process on the semiconductor element having a doped substance. 一種多重模態微波加熱裝置的製程,包括:提供一個微波加熱裝置,其包含有:一加熱腔室,具有一容置空間;一載台,設置於該容置空間中,該載台具有一平面,用以承載至少一被加熱物件;多個微波發射機,設置於該加熱腔室外,用以發射微波;多個半波整流電源供應器,分別耦接至該些微波發射機,該些半波整流電源供應器中的每一個包含有一電容器;以及多個縱向波導波管與多個橫向波導波管,分別連接於該加熱腔室與相應的該些微波發射機之間,各該縱向波導波管中的電場極化方向垂直於該載台的該平面,各該橫向波導波管中的電場極化方向平行於該載台的該平面;調整該些半波整流電源供應器中該電容器的電容值,使該些微波發射機發出的微波波形頻寬擴大至產生複數重疊耦合,倍增微波模態數;以及經由該些半波整流電源供應器供應電力至該些微波發射機,使所述微波藉由該些縱向波導波管與該些橫向波導波管傳遞至該加熱腔室中,並於該加熱腔室中形成多重微波模態。A process for manufacturing a multi-modal microwave heating device includes: providing a microwave heating device, including: a heating chamber having a receiving space; a carrier set in the receiving space, the carrier having a A plane for carrying at least one object to be heated; a plurality of microwave transmitters arranged outside the heating cavity for transmitting microwaves; a plurality of half-wave rectified power supplies respectively coupled to the microwave transmitters, the Each of the half-wave rectified power supplies includes a capacitor; and a plurality of longitudinal waveguides and a plurality of transverse waveguides are respectively connected between the heating chamber and the corresponding microwave transmitters, and each of the longitudinal The direction of the electric field polarization in the waveguide is perpendicular to the plane of the carrier, and the direction of the electric field polarization in each of the transverse waveguides is parallel to the plane of the carrier; adjusting the half-wave rectifier power supply in the The capacitance value of the capacitor expands the bandwidth of the microwave waveforms emitted by the microwave transmitters to produce complex overlapping coupling, multiplying the number of microwave modes; and the power is supplied through the half-wave rectified power supplies. The plurality of microwave power to the transmitter, the plurality of the vertical waveguide by microwave waveguide and the plurality of transverse wave tube is transmitted to the waveguide heating chamber, and forms a multi-mode microwave in the heating chamber. 如申請專利範圍第12或13項所述的製程,其中該些縱向波導波管以等功率的形式,分成兩組縱向波導波管,並且彼此相向且對稱地連接於該加熱腔室,以傳遞具有相反的電場相位的所述微波至該加熱腔室的內部,用以於該加熱腔室中形成多重縱向奇模態。The process according to item 12 or 13 of the scope of patent application, wherein the longitudinal waveguides are divided into two groups of longitudinal waveguides in the form of equal power, and are connected to the heating chamber facing each other and symmetrically to transfer The microwaves having opposite electric-phase phases go to the inside of the heating chamber to form multiple longitudinal odd modes in the heating chamber. 如申請專利範圍第12或13項所述的製程,其中該些縱向波導波管以等功率的形式,分成兩組縱向波導波管,並且彼此相向且對稱地連接於該加熱腔室,以傳遞具有相同的電場相位的所述微波至該加熱腔室的內部,用以於該加熱腔室中形成多重縱向偶模態。The process according to item 12 or 13 of the scope of patent application, wherein the longitudinal waveguides are divided into two groups of longitudinal waveguides in the form of equal power, and are connected to the heating chamber facing each other and symmetrically to transfer The microwaves having the same electric field phase go to the inside of the heating chamber to form multiple longitudinal even modes in the heating chamber. 如申請專利範圍第12或13項所述的製程,其中該些橫向波導波管以等功率的形式,分成兩組橫向波導波管,並且彼此相向且對稱地連接於該加熱腔室,以傳遞具有相反的電場相位的所述微波至該加熱腔室的內部,用以於該加熱腔室中形成多重橫向奇模態。The process according to item 12 or 13 of the scope of patent application, wherein the transverse waveguides are divided into two groups of transverse waveguides in the form of equal power, and are connected to the heating chamber facing each other and symmetrically to transfer The microwaves having opposite electric-phase phases go to the inside of the heating chamber to form multiple transverse odd modes in the heating chamber. 如申請專利範圍第12或13項所述的製程,其中該些橫向波導波管以等功率的形式,分成兩組橫向波導波管,並且彼此相向且對稱地連接於該加熱腔室,以傳遞具有相同的電場相位的所述微波至該加熱腔室的內部,用以於該加熱腔室中形成多重橫向偶模態。The process according to item 12 or 13 of the scope of patent application, wherein the transverse waveguides are divided into two groups of transverse waveguides in the form of equal power, and are connected to the heating chamber facing each other and symmetrically to transfer The microwaves having the same electric field phase go to the inside of the heating chamber to form multiple transverse even modes in the heating chamber. 如申請專利範圍第12或13項所述的製程,其中該些縱向波導波管以彼此間隔一固定角度連接於該加熱腔室與相應的該些微波發射機之間,以傳遞所述微波至該加熱腔室的內部,用以於該加熱腔室中形成多重橫向偶模態,其中彼此相鄰的該些導波管的長度差為導波管波長的二分之一再除以該些縱向波導波管個數;其中該些橫向波導波管以彼此間隔一固定角度連接於該加熱腔室與相應的該些微波發射機之間,以傳遞所述微波至該加熱腔室的內部,用以於該加熱腔室中形成多重縱向偶模態,其中彼此相鄰的該些導波管的長度差為導波管波長的二分之一再除以該些橫向波導波管個數;其中該些半波整流電源供應器係為十二個,且調整該電容器值之前更包括:使用工業用三相電源的三個接點R、S、T以△接電源的形式,分別形成R-S、S-T、T-R、S-R、T-S、R-T六相電力提供給該十二個半波整流電源供應器中的六個;以及使用該工業用三相電源的三個接點R、S、T以Y接電源的形式共接於一C接點,以分別形成為R-C、S-C、T-C、C-R、C-S、C-T六相電力提供給該十二個半波整流電源供應器中的另外六個。The process according to item 12 or 13 of the scope of the patent application, wherein the longitudinal waveguides are connected between the heating chamber and the corresponding microwave transmitters at a fixed angle from each other to transmit the microwaves to The interior of the heating chamber is used to form multiple transverse even modes in the heating chamber. The length difference between the waveguides adjacent to each other is a half of the wavelength of the waveguide and then divided by the wavelengths. The number of longitudinal waveguides; wherein the transverse waveguides are connected at a fixed angle from each other between the heating chamber and the corresponding microwave transmitters to transmit the microwaves to the interior of the heating chamber, Configured to form multiple longitudinal even modes in the heating chamber, wherein the length difference between the waveguides adjacent to each other is a half of the wavelength of the waveguide and then divided by the number of the transverse waveguides; Among them, there are twelve half-wave rectified power supplies, and before adjusting the capacitor value, the method further includes: using the three contacts R, S, and T of the industrial three-phase power supply to form RS, respectively, forming RS , ST, TR, SR, TS, RT six-phase power Six of the twelve half-wave rectified power supplies were provided; and three contacts R, S, and T using the industrial three-phase power supply were connected in common to a C contact in the form of a Y power supply. Six phases of RC, SC, TC, CR, CS, and CT are formed to supply the other six of the twelve half-wave rectified power supplies. 如申請專利範圍第12或13項所述的製程,其中該些半波整流電源供應器係為十二個,且調整該電容值之前更包括使用工業用三相電源的三個接點R、S、T以△接電源並聯Y接電源的形式,分別形成R-S、R-C、S-T、S-C、T-C、T-R、C-R、S-R、C-S、T-S、R-T、C-T十二相電力提供給該十二個半波整流電源供應器。According to the process described in the patent application No. 12 or 13, the number of the half-wave rectified power supplies is twelve, and before adjusting the capacitor value, the three contacts R, S, T are in the form of △ connected to the power supply in parallel with Y connected to the power supply, forming RS, RC, ST, SC, TC, TR, CR, SR, CS, TS, RT, and CT. Wave Rectified Power Supply. 如申請專利範圍第12或13項所述的製程,其中該電容器為一可變電容器。The process as described in claim 12 or 13, wherein the capacitor is a variable capacitor.
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