TWI647114B - Glass laminate - Google Patents

Glass laminate Download PDF

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Publication number
TWI647114B
TWI647114B TW104104085A TW104104085A TWI647114B TW I647114 B TWI647114 B TW I647114B TW 104104085 A TW104104085 A TW 104104085A TW 104104085 A TW104104085 A TW 104104085A TW I647114 B TWI647114 B TW I647114B
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Taiwan
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resin layer
glass substrate
glass
organic
layer
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TW104104085A
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Chinese (zh)
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TW201534480A (en
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山本今日子
佐佐木崇
下坂鷹典
閔庚薰
內田大輔
宮嶋達也
中村有希
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日商Agc股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06Joining glass to glass by processes other than fusing
    • C03C27/10Joining glass to glass by processes other than fusing with the aid of adhesive specially adapted for that purpose
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/283Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/06Interconnection of layers permitting easy separation
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/30Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04Polysiloxanes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/582Recycling of unreacted starting or intermediate materials

Abstract

本發明提供一種即便於高溫加熱處理後亦可容易將玻璃基板剝離,且矽氧樹脂層之分解亦已受到抑制的玻璃基層體。 The present invention provides a glass base layer which can be easily peeled off even after high-temperature heat treatment, and decomposition of the silicone resin layer is suppressed.

一種玻璃積層體,依序具備有支持基材層、矽氧樹脂層及玻璃基板層;矽氧樹脂層中之矽氧樹脂具有下述T3所示之有機矽氧基單元,且相對於全部有機矽氧基單元,T3所示之有機矽氧基單元的合計比率為80~100莫耳%;T3中R為苯基之有機矽氧基單元(A-1)與T3中R為甲基之有機矽氧基單元(B-1)之莫耳比((A-1):(B-1))為80~20:20~80;並且,滿足預定之剝離強度關係;T3:R-SiO3/2(式中,R表示苯基或甲基)。 A glass laminate comprising a support substrate layer, a silicone resin layer and a glass substrate layer in sequence; the epoxy resin in the epoxy resin layer has an organic phosphonium unit represented by the following T3, and is relatively organic The total ratio of the organic methoxy unit represented by T3 in the decyloxy unit is 80 to 100 mol%; in T3, R is an organic decyl unit (A-1) of a phenyl group and R is a methyl group in T3. The molar ratio of the organic methoxy unit (B-1) ((A-1): (B-1)) is 80 to 20: 20 to 80; and, the predetermined peel strength relationship is satisfied; T3: R-SiO 3/2 (wherein R represents a phenyl group or a methyl group).

Description

玻璃積層體 Glass laminate 發明領域 Field of invention

本發明係有關於一種玻璃積層體,特別是有關於一種具備預定之矽氧樹脂層的玻璃積層體。 The present invention relates to a glass laminate, and more particularly to a glass laminate having a predetermined silicone resin layer.

發明背景 Background of the invention

近年來,太陽電池(PV)、液晶面板(LCD)、有機EL面板(OLED)等之裝置(電子機器)的薄型化及輕量化持續進展,且用於該等裝置之玻璃基板的薄板化亦持續進展。然一旦因薄板化而導致玻璃基板之強度不足的話,則於裝置之製造步驟中,玻璃基板之處理性即會降低。 In recent years, thinner devices and electronic devices such as solar cells (PV), liquid crystal panels (LCDs), and organic EL panels (OLEDs) have been thinner and lighter, and the thinning of glass substrates used in such devices has also been made. Continue to progress. However, if the strength of the glass substrate is insufficient due to thinning, the rationality of the glass substrate is lowered in the manufacturing process of the device.

最近,為了因應前述之課題,而提案有如下之方法:準備一積層有薄板玻璃基板與補強板之玻璃積層體,並於在玻璃積層體之薄板玻璃基板上形成顯示裝置等之電子裝置用構件之後,自薄板玻璃基板將支持板分離(例如參考專利文獻1)。補強板具有支持板及被固定於該支持板上之矽氧樹脂層,且矽氧樹脂層與薄板玻璃基板係可剝離地緊貼著。玻璃積層體之矽氧樹脂層與薄板玻璃基板之界面被剝離,而自薄板玻璃基板分離之補強板可與新的薄板玻璃基 板進行積層,並作為玻璃積層體再利用。 Recently, in order to cope with the above-mentioned problems, there has been proposed a method of preparing a glass laminate having a laminated glass substrate and a reinforcing plate, and forming a member for an electronic device such as a display device on a thin glass substrate of a glass laminate. Thereafter, the support sheets are separated from the thin glass substrate (for example, refer to Patent Document 1). The reinforcing plate has a support plate and a silicone resin layer fixed to the support plate, and the silicone resin layer and the thin glass substrate are detachably adhered to each other. The interface between the epoxy resin layer of the glass laminate and the thin glass substrate is peeled off, and the reinforcing plate separated from the thin glass substrate can be combined with the new thin glass substrate. The sheets are laminated and reused as a glass laminate.

先行技術文獻 Advanced technical literature 專利文獻 Patent literature

專利文獻1:國際公開第2007/018028號 Patent Document 1: International Publication No. 2007/018028

發明概要 Summary of invention

關於記載於專利文獻1之玻璃積層體,近年來則變得要求更高之耐熱性。隨著形成於玻璃積層體之玻璃基板上之電子裝置用構件之高機能化及複雜化,不僅於形成電子裝置用構件時之溫度變得更高溫,曝露於其高溫中之時間需要長時間的情況亦不少。 In the glass laminate described in Patent Document 1, in recent years, higher heat resistance has been demanded. With the high functionality and complication of the components for electronic devices formed on the glass substrate of the glass laminate, the temperature becomes higher than the temperature at which the components for the electronic device are formed, and the time required for exposure to the high temperature takes a long time. There are also many situations.

記載於專利文獻1之玻璃積層體可耐大氣中300℃且1小時之處理。但是,依據本案發明者等之檢討,對記載於專利文獻1之玻璃積層體進行了450℃且1小時之處理的情況時,於欲將玻璃基板與支持基板分離時,玻璃基板無法自矽氧樹脂層表面剝離,然若欲勉強予以剝離的話玻璃基板之一部分會遭受破壞,結果有招致電子裝置之生產性降低的情形。 The glass laminate described in Patent Document 1 is resistant to atmospheric treatment at 300 ° C for 1 hour. However, when the glass laminate disclosed in Patent Document 1 is treated at 450 ° C for one hour, the glass substrate cannot be self-deoxidized when the glass substrate and the support substrate are to be separated. When the surface of the resin layer is peeled off, if a part of the glass substrate is to be peeled off, the glass substrate may be damaged, and as a result, the productivity of the electronic device may be lowered.

又,記載於專利文獻1之玻璃積層體中之矽氧樹脂層,於450℃下會於短時間內發生分解,而產生大量的出氣(outgas)。而所述出氣之產生,會污染形成於玻璃基板上之電子裝置用構件,結果成為使電子裝置之生產性降低之原因。 Further, the epoxy resin layer described in the glass laminate of Patent Document 1 is decomposed in a short time at 450 ° C, and a large amount of outgas is generated. On the other hand, the generation of the exhaust gas contaminates the member for an electronic device formed on the glass substrate, and as a result, the productivity of the electronic device is lowered.

本發明是有鑑於前述課題而作成者,目的在於提供一種玻璃積層體,其即便於高溫加熱處理後亦可容易將玻璃基板剝離,且矽氧樹脂層之分解亦已受到抑制。 The present invention has been made in view of the above problems, and it is an object of the invention to provide a glass laminate which can easily peel off a glass substrate even after high-temperature heat treatment, and the decomposition of the silicone resin layer is also suppressed.

本案發明者等為了解決前述課題致力進行檢討,結果完成了本發明。 The inventors of the present invention have made efforts to review the above problems in order to solve the above problems, and as a result, have completed the present invention.

即,本發明是一種玻璃積層體,其依序具備有支持基材層、矽氧樹脂層及玻璃基板層,其中矽氧樹脂層中之矽氧樹脂具有後述T3所示之有機矽氧基單元,且相對於全部有機矽氧基單元,T3所示之有機矽氧基單元的合計比率為80~100莫耳%;且T3中R為苯基之有機矽氧基單元(A-1)與T3中R為甲基之有機矽氧基單元(B-1)之莫耳比((A-1)/(B-1))為80/20~20/80;並且,矽氧樹脂層對於玻璃基板層之界面剝離強度與矽氧樹脂層對於支持基材層之界面剝離強度不同。 That is, the present invention is a glass laminate comprising a support substrate layer, a silicone resin layer, and a glass substrate layer in this order, wherein the epoxy resin in the epoxy resin layer has an organic phosphonium unit represented by T3 described later. And the total ratio of the organic decyloxy units represented by T3 is 80 to 100 mol% with respect to all the organic decyloxy units; and in the T3, R is an organic decyloxy unit (A-1) of the phenyl group and The molar ratio ((A-1)/(B-1)) of the organic decyloxy unit (B-1) wherein R is a methyl group in T3 is 80/20 to 20/80; and the epoxy resin layer is The interfacial peel strength of the glass substrate layer is different from the interfacial peel strength of the silicone resin layer to the support substrate layer.

本發明中,矽氧樹脂宜更具有後述Q所示之有機矽氧基單元。 In the present invention, the oxime resin preferably further has an organic decyloxy unit represented by Q described later.

本發明中,矽氧樹脂為硬化性有機聚矽氧之硬化物,且該硬化性有機聚矽氧宜為按以下比例含有後述T1~T3所示有機矽氧基單元的有機聚矽氧:以單元之個數比例(莫耳量)計,T1:T2:T3=0~5:20~50:50~80(惟,滿足T1+T2+T3=100之關係)。 In the present invention, the oxime resin is a hardened organic polyfluorene oxide, and the curable organic polyfluorene is preferably an organic polyoxygen oxide containing an organic decyloxy unit represented by T1 to T3 described later in the following ratio: The ratio of the number of cells (mole amount), T1: T2: T3 = 0 to 5: 20 to 50: 50 to 80 (however, the relationship of T1 + T2 + T3 = 100 is satisfied).

本發明中,硬化性有機聚矽氧之數目平均分子量宜為500~2000。 In the present invention, the number average molecular weight of the curable organopolyfluorene is preferably from 500 to 2,000.

本發明中,硬化性有機聚矽氧之質量平均分子量/數目平均分子量宜為1.00~2.00。 In the present invention, the mass average molecular weight/number average molecular weight of the curable organopolyfluorene is preferably from 1.00 to 2.00.

本發明中,藉由動態光散射法測出之硬化性有機聚矽氧之粒徑宜為0.5~100nm。 In the present invention, the particle diameter of the curable organopolyphosphonium oxide measured by the dynamic light scattering method is preferably from 0.5 to 100 nm.

本發明中,硬化性有機聚矽氧宜為將苯基三氯矽烷與甲基三氯矽烷進行水解而得之有機聚矽氧。 In the present invention, the curable organopolyfluorene is preferably an organic polyfluorene obtained by hydrolyzing phenyltrichloromethane and methyltrichloromethane.

本發明中,矽氧樹脂層之厚度宜為0.1~30μm。 In the present invention, the thickness of the silicone resin layer is preferably from 0.1 to 30 μm.

本發明中,支持基材宜為玻璃板。 In the present invention, the support substrate is preferably a glass plate.

本發明中,矽氧樹脂層對於玻璃基板層之界面剝離強度宜低於矽氧樹脂層對於支持基材層之界面剝離強度。且以下亦將該態樣之本發明稱為「第1態樣」。 In the present invention, the interfacial peel strength of the silicone resin layer to the glass substrate layer is preferably lower than the interfacial peel strength of the silicone resin layer to the support substrate layer. Hereinafter, the present invention is also referred to as "the first aspect".

又,本發明中,矽氧樹脂層對於玻璃基板層之界面剝離強度宜高於矽氧樹脂層對於支持基材層之界面剝離強度。且以下亦將該態樣之本發明稱為「第2態樣」。 Further, in the present invention, the interfacial peeling strength of the silicone resin layer to the glass substrate layer is preferably higher than the interfacial peel strength of the silicone resin layer to the supporting substrate layer. Hereinafter, the present invention is also referred to as "the second aspect".

依據本發明,可提供一種玻璃積層體,其即便於高溫加熱處理後亦可容易將玻璃基板剝離,且矽氧樹脂層之分解亦已受到抑制。 According to the present invention, it is possible to provide a glass laminate which can easily peel off the glass substrate even after the high-temperature heat treatment, and the decomposition of the silicone resin layer is also suppressed.

10、100、200‧‧‧玻璃積層體 10,100,200‧‧‧glass laminate

12‧‧‧支持基材 12‧‧‧Support substrate

14‧‧‧矽氧樹脂層 14‧‧‧Oxygenated resin layer

14a‧‧‧矽氧樹脂層與玻璃基板相接之表面 14a‧‧‧ surface of the epoxy resin layer and the glass substrate

16‧‧‧玻璃基板 16‧‧‧ glass substrate

16a‧‧‧玻璃基板之第1主面 16a‧‧‧1st main surface of the glass substrate

16b‧‧‧玻璃基板之第2主面 16b‧‧‧2nd main surface of the glass substrate

18‧‧‧附樹脂層之支持基材 18‧‧‧Support substrate with resin layer

20‧‧‧附樹脂層之玻璃基板 20‧‧‧ glass substrate with resin layer

22‧‧‧電子裝置用構件 22‧‧‧Members for electronic devices

24‧‧‧附電子裝置用構件之積層體 24‧‧‧Laminated body of components for electronic devices

26‧‧‧附構件之玻璃基板 26‧‧‧ Glass substrate with attached components

圖1係有關本發明玻璃積層體之第1實施態樣之示意截面圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a first embodiment of a glass laminate according to the present invention.

圖2係按步驟順序顯示有關本發明附構件之玻璃基板之製造方法之一實施形態的示意截面圖。 Fig. 2 is a schematic cross-sectional view showing an embodiment of a method for producing a glass substrate according to the attachment member of the present invention in order of steps.

圖3係有關本發明玻璃積層體之第2實施態樣之示意截 面圖。 Figure 3 is a schematic cross-sectional view showing a second embodiment of the glass laminate of the present invention. Surface map.

用以實施發明之形態 Form for implementing the invention

以下,將參照圖式就用以實施本發明之形態進行說明,惟本發明並不侷限於以下之實施形態,於無脫離本發明範圍的情況下,可對以下之實施形態施加各種變形及置換。 In the following, the embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited to the embodiments described below, and various modifications and substitutions can be made to the following embodiments without departing from the scope of the invention. .

本發明之玻璃積層體之特點,可舉下述點:矽氧樹脂層中之矽氧樹脂不僅含有預定量之後述T3所示之有機矽氧基單元,且T3中R為苯基之有機矽氧基單元(A-1)與T3中R為甲基之有機矽氧基單元(B-1)之莫耳比((A-1)/(B-1))在預定之範圍。更具體而言,藉由矽氧樹脂含有預定量之T3所示之有機矽氧基單元,可使矽氧樹脂層之耐熱性提升。 The glass laminate of the present invention is characterized in that the oxime resin in the oxime resin layer contains not only a predetermined amount of an organic oxime unit represented by T3 described later, but also an organic ruthenium in which T is a phenyl group. The molar ratio ((A-1) / (B-1)) of the oxy group (A-1) to the organomethoxy unit (B-1) wherein R is a methyl group in T3 is within a predetermined range. More specifically, the heat resistance of the silicone resin layer can be improved by the fact that the silicone resin contains a predetermined amount of the organic phosphonium oxygen unit represented by T3.

又,本案發明人等就高溫加熱處理後之玻璃積層體中玻璃基板與支持基板變得難分離之理由進行檢討,發現乃為矽氧樹脂層表面上所含有之官能基造成之影響。舉例來說,於矽氧樹脂層表面含有Si-Me基的情況時,該基於250℃以上之高溫加熱處理後會較易變為Si-OH基。因此,一旦矽氧樹脂層中所含之Si-Me基的量過多的話,於高溫加熱處理後許多Si-OH基即會出現於矽氧樹脂層表面,而與鄰接之基板(例如玻璃基板)之結合力增加,結果矽氧樹脂層與鄰接於該矽氧樹脂層之基板會變得難剝離。另一方面,Si-Ph基則較難轉換成Si-OH基。但是,一旦Si-Ph基過多的話,因取 代基之立體障礙之故,硬化性有機聚矽氧之交聯硬化會難充分進行,從而矽氧樹脂層之交聯度會降低。因而,因為矽氧樹脂層之機械強度降低,或於矽氧樹脂層之表面殘留有源自有機聚矽氧之未反應Si-OH基,結果玻璃基板之剝離性會變差。本案發明人基於如前述之見解,藉由調整前述莫耳比((A-1)/(B-1)),而發現一即便高溫加熱處理後玻璃基板亦容易剝離之矽氧樹脂層之組成。 Moreover, the inventors of the present invention examined the reason why the glass substrate and the support substrate were difficult to separate in the glass laminate after the high-temperature heat treatment, and found that it was an influence of the functional group contained on the surface of the epoxy resin layer. For example, in the case where the surface of the epoxy resin layer contains a Si-Me group, it is more likely to become a Si-OH group after heat treatment at a high temperature of 250 ° C or higher. Therefore, once the amount of the Si-Me group contained in the silicone resin layer is excessive, many Si-OH groups appear on the surface of the silicone resin layer after the high-temperature heat treatment, and the adjacent substrate (for example, a glass substrate). As a result, the bonding force increases, and as a result, the epoxy resin layer and the substrate adjacent to the epoxy resin layer become difficult to peel off. On the other hand, the Si-Ph group is more difficult to convert to a Si-OH group. However, once there are too many Si-Ph groups, Due to the steric hindrance of the base, the cross-linking hardening of the hardening organic polyoxygen will be difficult to proceed sufficiently, so that the degree of crosslinking of the silicone resin layer is lowered. Therefore, since the mechanical strength of the silicone resin layer is lowered or the unreacted Si-OH group derived from the organic polyfluorene remains on the surface of the silicone resin layer, the peeling property of the glass substrate is deteriorated. The inventors of the present invention have found that the composition of the silicone resin layer which is easily peeled off even after the high-temperature heat treatment is obtained by adjusting the aforementioned molar ratio ((A-1)/(B-1)) based on the above findings. .

又,以玻璃積層體來說,其特徵在於矽氧樹脂層對於玻璃基板層之界面剝離強度與矽氧樹脂層對於支持基材層之界面剝離強度不同。例如,於第1實施態樣中,矽氧樹脂層對於玻璃基板層之界面剝離強度低於矽氧樹脂層對於支持基材層之界面剝離強度,從而矽氧樹脂層與玻璃基板層會剝離,而分離成矽氧樹脂層與支持基材之積層體、及玻璃基板。又,於第2實施態樣中,矽氧樹脂層對於玻璃基板層之界面剝離強度高於矽氧樹脂層對於支持基材層之界面剝離強度,從而矽氧樹脂層與支持基材層會剝離,而分離成玻璃基板與矽氧樹脂層之積層體、及支持基材。 Further, in the case of a glass laminate, the interfacial peel strength of the silicone resin layer to the glass substrate layer is different from the interfacial peel strength of the silicone resin layer to the support substrate layer. For example, in the first embodiment, the interfacial peel strength of the silicone resin layer to the glass substrate layer is lower than the interfacial peel strength of the epoxy resin layer to the support substrate layer, and the epoxy resin layer and the glass substrate layer are peeled off. The laminate is separated into a laminate of a silicone resin layer and a support substrate, and a glass substrate. Further, in the second embodiment, the interface peeling strength of the silicone resin layer with respect to the glass substrate layer is higher than the interface peeling strength of the silicone resin layer with respect to the supporting substrate layer, so that the epoxy resin layer and the supporting substrate layer are peeled off. And separated into a laminate of a glass substrate and a silicone resin layer, and a support substrate.

以下,將分為第1實施態樣及第2實施態樣來進行說明。 Hereinafter, the first embodiment and the second embodiment will be described.

<第1實施態樣> <First embodiment>

圖1係有關於本發明玻璃積層體之第1實施態樣之示意截面圖。 Fig. 1 is a schematic cross-sectional view showing a first embodiment of the glass laminate of the present invention.

如圖1所示,玻璃積層體10係一具有支持基材12之層、玻璃基板16之層及存在於其等之間之矽氧樹脂層14的積層 體。而矽氧樹脂層14其中一面係與支持基材12之層相接,並且另一面係與玻璃基板16之第1主面16a相接。 As shown in FIG. 1, the glass laminate 10 is a laminate having a layer supporting the substrate 12, a layer of the glass substrate 16, and a layer of the epoxy resin layer 14 present between the layers. body. On the other hand, the surface of the silicone resin layer 14 is in contact with the layer of the support substrate 12, and the other surface is in contact with the first main surface 16a of the glass substrate 16.

由支持基材12之層及矽氧樹脂層14構成之2層部分,於製造液晶面板等之電子裝置用構件之構件形成步驟中,是用以補強玻璃基板16。另外,將為了製造玻璃積層體10而預先製造之由支持基材12之層及矽氧樹脂層14構成之2層部分稱為「附樹脂層之支持基材18」。 The two-layer portion composed of the layer of the support substrate 12 and the epoxy resin layer 14 is used to reinforce the glass substrate 16 in the member forming step of manufacturing the member for an electronic device such as a liquid crystal panel. In addition, the two-layer portion composed of the layer of the support substrate 12 and the silicone resin layer 14 which are previously manufactured to produce the glass laminate 10 is referred to as "the support substrate 18 with the resin layer".

該玻璃積層體10係使用至後述構件形成步驟為止。即,該玻璃積層體10係使用至於其玻璃基板16之第2主面16b表面上形有液晶顯示裝置等之電子裝置用構件為止。其後,形成有電子裝置用構件之玻璃積層體會被分離成支持基材12與附構件之玻璃基板,而附樹脂層之支持基材18則不會成為構成電子裝置之部分。附樹脂層之支持基材18可與新的玻璃基板16進行積層,並作為新的玻璃積層體10再利用。 This glass laminate 10 is used until the member forming step described later. In other words, the glass laminate 10 is formed such that a member for an electronic device such as a liquid crystal display device is formed on the surface of the second main surface 16b of the glass substrate 16. Thereafter, the glass laminate in which the member for electronic device is formed is separated into the glass substrate supporting the substrate 12 and the attached member, and the support substrate 18 with the resin layer does not become a part constituting the electronic device. The support substrate 18 with the resin layer can be laminated with the new glass substrate 16 and reused as a new glass laminate 10.

支持基材12與矽氧樹脂層14之界面具有剝離強度(x),而一旦對支持基材12與矽氧樹脂層14之界面施加超過剝離強度(x)之剝離方向的應力時,支持基材12與矽氧樹脂層14之界面即會剝離。矽氧樹脂層14與玻璃基板16之界面具有剝離強度(y),而一旦對矽氧樹脂層14與玻璃基板16之界面施加超過剝離強度(y)之剝離方向的應力,矽氧樹脂層14與玻璃基板16之界面即會剝離。 The interface between the support substrate 12 and the silicone resin layer 14 has a peel strength (x), and when a stress exceeding the peeling strength (x) in the peeling direction is applied to the interface between the support substrate 12 and the silicone resin layer 14, the support base The interface between the material 12 and the silicone resin layer 14 is peeled off. The interface between the silicone resin layer 14 and the glass substrate 16 has a peeling strength (y), and when a stress exceeding the peeling strength (y) in the peeling direction is applied to the interface between the silicone resin layer 14 and the glass substrate 16, the silicone resin layer 14 is applied. The interface with the glass substrate 16 is peeled off.

於玻璃積層體10中,前述剝離強度(x)係高於前述剝離強度(y)。因此,於玻璃積層體10施加拉開支持基材12與玻 璃基板16之方向的應力的話,玻璃積層體10會於矽氧樹脂層14與玻璃基板16之界面剝離,而分離成玻璃基板16與附樹脂層之支持基材18。 In the glass laminate 10, the peel strength (x) is higher than the peel strength (y). Therefore, the support substrate 12 and the glass are pulled apart from the glass laminate 10 In the direction of the glass substrate 16, the glass laminate 10 is peeled off from the interface between the silicone resin layer 14 and the glass substrate 16, and is separated into the glass substrate 16 and the support substrate 18 with the resin layer.

剝離強度(x)宜高於剝離強度(y)。提高剝離強度(x)係指提高第1矽氧樹脂層14對於支持基材12之附著力,且於加熱處理後還可對於玻璃基板16維持相對高之附著力。 The peel strength (x) is preferably higher than the peel strength (y). Increasing the peel strength (x) means increasing the adhesion of the first silicone resin layer 14 to the support substrate 12, and maintaining a relatively high adhesion to the glass substrate 16 after the heat treatment.

為了提高矽氧樹脂層14對於支持基材12之附著力,宜使後述硬化性有機聚矽氧於支持基材12上交聯硬化而形成矽氧樹脂層。藉由交聯硬化時之黏著力,可形成經以高結合力對支持基材12結合之矽氧樹脂層14。 In order to improve the adhesion of the silicone resin layer 14 to the support substrate 12, it is preferable to form a silicone resin layer by crosslinking and curing the curable organopolysiloxane described later on the support substrate 12. The epoxy resin layer 14 bonded to the support substrate 12 with high bonding force can be formed by the adhesive force at the time of crosslinking hardening.

另一方面,對交聯硬化後之矽氧樹脂之玻璃基板16的結合力會低於前述交聯硬化時產生之結合力為通例。因此,於支持基材12上形成矽氧樹脂層14,其後再於矽氧樹脂層14的面上積層玻璃基板16,藉此可製造玻璃積層體10。 On the other hand, the bonding strength of the glass substrate 16 of the cross-linking hardened epoxy resin is lower than that of the bonding force generated at the time of the crosslinking hardening. Therefore, the epoxy resin layer 14 is formed on the support substrate 12, and then the glass substrate 16 is laminated on the surface of the epoxy resin layer 14, whereby the glass laminate 10 can be produced.

以下,首先將就構成玻璃積層體10之各層(支持基材12、玻璃基板16及矽氧樹脂層14)進行詳細敘述,之後,再就玻璃積層體之製造方法進行詳細敘述。 Hereinafter, the respective layers (the support substrate 12, the glass substrate 16, and the epoxy resin layer 14) constituting the glass laminate 10 will be described in detail, and then the method for producing the glass laminate will be described in detail.

[支持基材] [Support substrate]

支持基材12可支持並補強玻璃基板16,而於後述構件形成步驟(製造電子裝置用構件之步驟)中防止製造電子裝置用構件時玻璃基板16之變形、受傷及破損等。 The support substrate 12 can support and reinforce the glass substrate 16 and prevent deformation, damage, breakage, and the like of the glass substrate 16 when the electronic device member is manufactured in the member forming step (step of manufacturing the electronic device).

作為支持基材12係使用例如玻璃板、塑膠板、及SUS板等之金屬板等。通常,因構件形成步驟會伴隨熱處理,故支持基材12宜由與玻璃基板16之線膨脹係數差小的材料 來形成,且以與玻璃基板16同一材料來形成更佳,並且支持基材12宜為玻璃板。特別是,支持基材12宜為由與玻璃基板16相同之玻璃材料構成之玻璃板。 As the support base material 12, for example, a metal plate such as a glass plate, a plastic plate, or a SUS plate is used. Generally, since the member forming step is accompanied by heat treatment, the support substrate 12 is preferably made of a material having a small difference in linear expansion coefficient from the glass substrate 16. It is preferably formed and formed in the same material as the glass substrate 16, and the support substrate 12 is preferably a glass plate. In particular, the support substrate 12 is preferably a glass plate composed of the same glass material as the glass substrate 16.

另外,如後述支持基材12亦可為由2種以上的層構成之積層體。 Further, the support base material 12 to be described later may be a laminate body composed of two or more layers.

支持基材12之厚度可較玻璃基板16厚,且亦可較薄。而理想的是根據玻璃基板16之厚度、矽氧樹脂層14之厚度及玻璃積層體10之厚度來選擇支持基材12之厚度。例如,一現行之構件形成步驟經設計成欲處理厚度0.5mm之基板者,當玻璃基板16之厚度與矽氧樹脂層14之厚度的和為0.1mm時,將支持基材12之厚度設為0.4mm。而支持基材12之厚度在通常的情況下宜為0.2~5.0mm。 The thickness of the support substrate 12 can be thicker than the glass substrate 16, and can also be thin. It is desirable to select the thickness of the support substrate 12 in accordance with the thickness of the glass substrate 16, the thickness of the silicone resin layer 14, and the thickness of the glass laminate 10. For example, a current member forming step is designed to treat a substrate having a thickness of 0.5 mm, and when the sum of the thickness of the glass substrate 16 and the thickness of the silicone resin layer 14 is 0.1 mm, the thickness of the supporting substrate 12 is set to 0.4mm. The thickness of the support substrate 12 is usually 0.2 to 5.0 mm in the usual case.

支持基材12為玻璃板的情況時,玻璃板之厚度基於容易處理且不易龜裂等之理由,宜在0.08mm以上。又,基於於電子裝置用構件形成後進行剝離之際,期望具有不會龜裂而能適度撓曲之剛性的理由,玻璃板之厚度則宜在1.0mm以下。 When the support substrate 12 is a glass plate, the thickness of the glass plate is preferably 0.08 mm or more for the reason that it is easy to handle and is not easily cracked. In addition, when the member for an electronic device is formed and peeled off, it is desirable to have a rigidity that can be flexed without being cracked, and the thickness of the glass plate is preferably 1.0 mm or less.

支持基材12與玻璃基板16於25~300℃下之平均線膨脹係數的差,宜在500×10-7/℃以下,較佳為300×10-7/℃以下,且200×10-7/℃以下更佳。一旦差過大的話,於構件形成步驟中加熱冷卻時,可能有玻璃積層體10劇烈翹曲,或支持基材12與玻璃基板16發生剝離的情形。而當支持基材12之材料與玻璃基板16之材料相同的情況時,可抑制所述問題之發生。 The difference between the average linear expansion coefficient of the support substrate 12 and the glass substrate 16 at 25 to 300 ° C is preferably 500 × 10 -7 / ° C or less, preferably 300 × 10 -7 / ° C or less, and 200 × 10 - 7 / ° C or less is better. When the difference is too large, when the member is heated and cooled in the member forming step, there is a possibility that the glass laminate 10 is strongly warped or the substrate 12 and the glass substrate 16 are peeled off. When the material of the support substrate 12 is the same as the material of the glass substrate 16, the occurrence of the problem can be suppressed.

[玻璃基板] [glass substrate]

玻璃基板16其第1主面16a與矽氧樹脂層14相接,而於與矽氧樹脂層14側相反之側的第2主面16b則設有電子裝置用構件。 In the glass substrate 16, the first main surface 16a is in contact with the silicone resin layer 14, and the second main surface 16b on the side opposite to the epoxy resin layer 14 side is provided with an electronic device member.

玻璃基板16之種類為一般的即可,可舉例如像LCD及OLED等之顯示裝置用之玻璃基板等。玻璃基板16具有優異之耐化學性及耐透濕性,且熱收縮率低。而作為熱收縮率之指標係使用JIS R 3102(1995年修正)所規定之線膨脹係數。 The type of the glass substrate 16 may be a general one, and examples thereof include a glass substrate for a display device such as an LCD or an OLED. The glass substrate 16 has excellent chemical resistance and moisture permeability, and has a low heat shrinkage rate. As an index of the heat shrinkage rate, the linear expansion coefficient prescribed in JIS R 3102 (1995 Revision) is used.

若玻璃基板16之線膨脹係數大的話,因構件形成步驟多伴隨著加熱處理,故容易產生各種不良狀況。舉例來說,於玻璃基板16上形成TFT的情況時,若於加熱下冷卻已形成有TFT之玻璃基板16的話,恐有因玻璃基板16之熱收縮而使TFT之位置偏離變得過大之虞。 When the linear expansion coefficient of the glass substrate 16 is large, since the member forming step is often accompanied by heat treatment, various defects are likely to occur. For example, when a TFT is formed on the glass substrate 16, if the glass substrate 16 on which the TFT is formed is cooled by heating, there is a fear that the positional deviation of the TFT becomes excessive due to thermal contraction of the glass substrate 16. .

玻璃基板16可熔融玻璃原料並將熔融玻璃成形成板狀而得。所述之成形方法為一般的方法即可,舉例來說,可使用浮製玻板法、熔融法、流孔下引法、福考特法(Fourcault process)、及魯伯(Lubbers)法等。又,尤其是厚度薄的玻璃基板16,可將已暫時成形成板狀之玻璃加熱至可成形溫度,並以延伸等之手段將其拉伸使其變薄之方法(再曳引法))來成形而得。 The glass substrate 16 can be obtained by melting a glass raw material and forming the molten glass into a plate shape. The forming method may be a general method, for example, a floating glass plate method, a melting method, a flow hole down-draw method, a Fourcault process, a Lubbers method, or the like may be used. . Further, in particular, the glass substrate 16 having a small thickness can be formed by heating a glass which has been temporarily formed into a plate shape to a moldable temperature, and stretching it to be thinned by means of stretching or the like (re-drawing method). To form it.

玻璃基板16之玻璃的種類並無特別限定,但以無鹼硼矽酸鹽玻璃、硼矽酸鹽玻璃、鈉鈣玻璃、高矽玻璃、及其他以氧化矽為主成分之氧化物系玻璃為宜。作為氧化 物系玻璃則宜為依氧化物換算之氧化矽含量在40~90質量%之玻璃。 The type of the glass of the glass substrate 16 is not particularly limited, but an alkali-free borosilicate glass, a borosilicate glass, a soda-lime glass, a sorghum glass, and other oxide-based glass containing cerium oxide as a main component are used. should. As oxidation The glass of the system is preferably a glass having a cerium oxide content of 40 to 90% by mass in terms of oxide.

作為玻璃基板16之玻璃,係採用適於電子裝置用構件之種類及其製造步驟之玻璃。例如,液晶面板用之玻璃基板,基於鹼金屬成分之溶出會易予液晶帶來影響,故由實質上不含鹼金屬成分之玻璃(無鹼玻璃)構成(惟,通常含鹼土金屬成分)。如所述,玻璃基板16之玻璃可根據所適用裝置之種類及其製造步驟來適當地選擇。 As the glass of the glass substrate 16, a glass suitable for the type of the member for electronic devices and the manufacturing steps thereof is used. For example, a glass substrate for a liquid crystal panel is easily formed by an alkali metal component, and therefore is made of a glass (alkali-free glass) which does not substantially contain an alkali metal component (except for an alkaline earth metal component). As described, the glass of the glass substrate 16 can be appropriately selected depending on the kind of the apparatus to be applied and the manufacturing steps thereof.

玻璃基板16之厚度,基於玻璃基板16之薄型化及/或輕量化之觀點,宜在0.3mm以下,較佳則在0.15mm以下。在0.3mm以下的情況時,可賦予玻璃基板16良好的可撓性。而在0.15mm以下的情況時,則可將玻璃基板16捲取成輥筒狀。 The thickness of the glass substrate 16 is preferably 0.3 mm or less, and preferably 0.15 mm or less, from the viewpoint of thinning and/or weight reduction of the glass substrate 16. When it is 0.3 mm or less, the glass substrate 16 can be provided with favorable flexibility. On the other hand, in the case of 0.15 mm or less, the glass substrate 16 can be wound into a roll shape.

又,玻璃基板16之厚度,基於易製造玻璃基板16及易處理玻璃基板16等之理由,宜在0.03mm以上。 Further, the thickness of the glass substrate 16 is preferably 0.03 mm or more for the reason that the glass substrate 16 and the disposable glass substrate 16 are easily produced.

另外,玻璃基板16亦可由2層以上構成,而此時,形成各層之材料可為同種材料,亦可為不同種材料。又,此時,「玻璃基板16之厚度」係指所有層之合計厚度。 Further, the glass substrate 16 may be composed of two or more layers, and in this case, the materials forming the respective layers may be the same material or different materials. In this case, the "thickness of the glass substrate 16" means the total thickness of all the layers.

[矽氧樹脂層] [矽 树脂 resin layer]

矽氧樹脂層14不僅可至進行分離玻璃基板16與支持基材12之操作為止防止玻璃基板16之位置偏離,且可防止玻璃基板16等因分離操作而破損。矽氧樹脂層14之與玻璃基板16相接之表面14a,係緊密貼合於玻璃基板16之第1主面16a。矽氧樹脂層14係以弱的結合力與玻璃基板16之第1主 面16a結合,從而其界面剥離強度(y)低於矽氧樹脂層14與支持基材12之間之界面剥離強度(x)。矽氧樹脂層14與玻璃基板16之界面的結合力,亦可於玻璃積層體10之玻璃基板16之面(第2主面16b)上形成電子裝置用構件之前後作變化。但是,即便是於形成電子裝置用構件之後,剥離強度(y)亦宜低於剥離強度(x)。 The epoxy resin layer 14 can prevent the positional deviation of the glass substrate 16 from the operation of separating the glass substrate 16 and the support substrate 12, and can prevent the glass substrate 16 and the like from being damaged by the separation operation. The surface 14a of the epoxy resin layer 14 that is in contact with the glass substrate 16 is in close contact with the first main surface 16a of the glass substrate 16. The epoxy resin layer 14 is weakly bonded to the first main glass substrate 16 The face 16a is bonded such that its interfacial peel strength (y) is lower than the interfacial peel strength (x) between the silicone resin layer 14 and the support substrate 12. The bonding force between the epoxy resin layer 14 and the glass substrate 16 may be changed before and after the electronic device member is formed on the surface (the second main surface 16b) of the glass substrate 16 of the glass laminate 10. However, even after forming the member for an electronic device, the peel strength (y) is preferably lower than the peel strength (x).

吾人推測矽氧樹脂層14與玻璃基板層16是以弱的接著力或源自凡得瓦力之結合力來結合。於形成矽氧樹脂層14後欲於其表面積層玻璃基板16時,當於矽氧樹脂層14之矽氧樹脂以展現不出接著力之程度充分交聯時,則推測係藉由源自凡得瓦力之結合力來結合。但是,矽氧樹脂層14之矽氧樹脂具有某種程度之弱的接著力的情況並不少。而即便在接著性極低的情況下,於玻璃積層體10製造後欲於其玻璃積層體10之上形成電子裝置用構件之際,推測亦會由於加熱操作等,使矽氧樹脂層14之矽氧樹脂與玻璃基板16面黏接,從而矽氧樹脂層14與玻璃基板層16之間的結合力上升。 It is assumed that the silicone resin layer 14 and the glass substrate layer 16 are bonded by a weak bonding force or a combination of van der Waals forces. When the glass substrate 16 is formed on the surface layer of the epoxy resin layer 14 after the formation of the epoxy resin layer 14, when the epoxy resin of the epoxy resin layer 14 is sufficiently crosslinked to exhibit no adhesion, it is presumed that The combination of the power of the tile to combine. However, it is not the case that the epoxy resin of the silicone resin layer 14 has a certain degree of weak adhesion. In the case where the adhesiveness of the glass laminate 10 is to be formed on the glass laminate 10 after the production of the glass laminate 10, it is presumed that the epoxy resin layer 14 is caused by a heating operation or the like. The epoxy resin adheres to the surface of the glass substrate 16 so that the bonding force between the epoxy resin layer 14 and the glass substrate layer 16 rises.

則依據情況,亦可對積層前之矽氧樹脂層14之表面或積層前之玻璃基板16之第1主面16a進行減弱兩者間之結合力之處理再行積層。藉由對要積層的面進行非接著性處理等,其後再進行積層,可減弱矽氧樹脂層14與玻璃基板層16之界面的結合力,使剥離強度(y)降低。 Further, depending on the case, the surface of the epoxy resin layer 14 before the deposition or the first main surface 16a of the glass substrate 16 before the deposition may be subjected to a process of weakening the bonding force therebetween. By performing non-adhesion treatment on the surface to be laminated, and then laminating, the bonding strength between the interface between the silicone resin layer 14 and the glass substrate layer 16 can be weakened, and the peel strength (y) can be lowered.

矽氧樹脂層14係以接著力或黏著力等之強結合力與支持基材12表面結合著,而提高兩者之密著性之方法 可採用眾所周知之方法。舉例來說,如後述可藉由於支持基材12表面上形成矽氧樹脂層14(更具體來說,係使可形成預定之矽氧樹脂的硬化性有機聚矽氧於支持基材12上交聯硬化),使矽氧樹脂層14中之矽氧樹脂接著於支持基材12表面,以獲得高結合力。又,於支持基材12表面與矽氧樹脂層14之間施行使產生強結合力之處理(例如使用耦合劑之處理),可提高支持基材12表面與矽氧樹脂層14之間的結合力。 The epoxy resin layer 14 is bonded to the surface of the support substrate 12 by a strong bonding force such as an adhesive force or an adhesive force, thereby improving the adhesion between the two. A well-known method can be employed. For example, as described later, the epoxy resin layer 14 is formed on the surface of the support substrate 12 (more specifically, the hardenable organic polyoxyl which can form a predetermined epoxy resin is formed on the support substrate 12). The co-hardening) causes the epoxy resin in the silicone resin layer 14 to adhere to the surface of the support substrate 12 to obtain high bonding force. Further, a treatment for generating a strong bonding force between the surface of the support substrate 12 and the silicone resin layer 14 (for example, treatment using a coupling agent) can improve the bonding between the surface of the support substrate 12 and the silicone resin layer 14. force.

矽氧樹脂層14與支持基材12之層以高結合力結合著,係意味著兩者之界面剥離強度(x)高。 The layer of the silicone resin layer 14 and the support substrate 12 are bonded with a high bonding force, which means that the interface peel strength (x) of both is high.

矽氧樹脂層14之厚度雖無特別限定,但上限宜為30μm(即,30μm以下),較佳為20μm,更佳為8μm。而下限只要為可剝離之厚度則並無特別限定,但多在0.1μm以上。矽氧樹脂層14之厚度在所述範圍的話,則難於矽氧樹脂層14產生裂痕,且即便矽氧樹脂層14與玻璃基板16之間存在有氣泡或異物,亦可抑制玻璃基板16之變形缺陷的發生。 The thickness of the silicone resin layer 14 is not particularly limited, but the upper limit is preferably 30 μm (that is, 30 μm or less), preferably 20 μm, and more preferably 8 μm. The lower limit is not particularly limited as long as it is a peelable thickness, but is usually 0.1 μm or more. When the thickness of the silicone resin layer 14 is within the above range, cracking of the epoxy resin layer 14 is difficult, and even if bubbles or foreign matter are present between the silicone resin layer 14 and the glass substrate 16, deformation of the glass substrate 16 can be suppressed. The occurrence of defects.

前述厚度意指平均厚度,為以接觸式膜厚測定裝置測定矽氧樹脂層14在5點以上任意位置之厚度,並將其等進行算術平均者。 The thickness means the average thickness, and the thickness of the epoxy resin layer 14 at any position of 5 points or more is measured by a contact type film thickness measuring apparatus, and arithmetic average is performed.

矽氧樹脂層14之玻璃基板16側之表面的表面粗度Ra雖無特別限制,但依玻璃基板16之積層性及剝離性較優異之觀點來看,宜為0.1~20nm,且0.1~10nm較佳。 The surface roughness Ra of the surface of the surface of the glass substrate 16 of the silicone resin layer 14 is not particularly limited, but is preferably 0.1 to 20 nm and 0.1 to 10 nm from the viewpoint of excellent laminate property and releasability of the glass substrate 16 . Preferably.

另外,表面粗度Ra之測定方法係按照JIS B 0601-2001來進行,將於任擇5處以上的點測出之Ra經算術平均所得之 值即為前述表面粗度Ra。 In addition, the method of measuring the surface roughness Ra is performed in accordance with JIS B 0601-2001, and the Ra measured by an arbitrary five or more points is arithmetically averaged. The value is the aforementioned surface roughness Ra.

另外,矽氧樹脂層14亦可由2層以上構成。且此時「矽氧樹脂層14之厚度」係指所有矽氧樹脂層之合計厚度。 Further, the silicone resin layer 14 may be composed of two or more layers. In this case, the "thickness of the epoxy resin layer 14" means the total thickness of all the silicone resin layers.

通常,經塗布於基材上之硬化性有機聚矽氧,係於常溫至小於基材的熱變形溫度之溫度條件下將材料中所含之溶劑予以乾燥並且去除之後,藉由加熱進行熱硬化而成為矽氧樹脂。於所述之熱硬化的過程中,硬化性有機聚矽氧中所含之矽醇基(-Si-OH)彼此會發生脫水縮合反應而形成矽氧烷鍵(-Si-O-Si-),於交聯之同時會硬化成為矽氧樹脂。於升溫過程中,由於因溶劑之蒸發而發生之毛細管力與於膜中進行之脫水縮合反應,凝膠薄膜會緻密化,從而膜的體積減少率會達數十%。凝膠薄膜雖非完全彈性體,然而一旦該凝膠薄膜近似於彈性體的話,依基材而異膜在面內方向呈拘束狀態下進行收縮時,會導致膜之面內方向有應變蓄積的情形。結果,於膜之面內方向會產生拉伸應力(以下,亦稱「收縮應力」)。 Usually, the curable organic polyfluorene coated on the substrate is subjected to heat hardening by heating after drying and removing the solvent contained in the material at a temperature from a normal temperature to a temperature lower than a heat distortion temperature of the substrate. And become a silicone resin. In the process of thermal hardening, the sterol groups (-Si-OH) contained in the hardenable organopolyoxygen will undergo dehydration condensation reaction with each other to form a siloxane chain (-Si-O-Si-). It will harden into a silicone resin at the same time as crosslinking. During the heating process, the gel film is densified due to the capillary force generated by evaporation of the solvent and the dehydration condensation reaction in the film, so that the volume reduction rate of the film is several tens of%. Although the gel film is not completely elastic, once the gel film is similar to the elastomer, when the film is shrunk in the in-plane direction depending on the substrate, strain accumulation occurs in the in-plane direction of the film. situation. As a result, tensile stress (hereinafter also referred to as "shrinkage stress") occurs in the in-plane direction of the film.

本發明之「矽氧樹脂層之收縮應力」係於矽氧樹脂層面內方向作用之拉伸應力值,其係將於周圍溫度25℃下以薄膜應力測定裝置測出該矽氧樹脂層形成前後之矽晶片之曲率半徑的值、與該矽氧樹脂層之膜厚的值,藉由下述式(1)所示之式算出而得。另外,測定程序會詳細敘述於實施例中。 The "shrinkage stress of the silicone resin layer" of the present invention is a tensile stress value acting in the direction of the layer of the epoxy resin, which is measured by a film stress measuring device at a peripheral temperature of 25 ° C before and after the formation of the silicone resin layer. The value of the radius of curvature of the wafer and the value of the film thickness of the silicone resin layer are calculated by the equation shown in the following formula (1). In addition, the measurement procedure will be described in detail in the examples.

[數1] [Number 1]

式中,E/(1-ν)係矽晶片之雙軸彈性係數(結晶面(100):1.805×1011Pa),h為矽晶片之厚度[m],t為矽氧樹脂層之厚度[m],R為形成矽氧樹脂層前之矽晶片之曲率半徑與形成矽氧樹脂層後之矽晶片之曲率半徑的差[m]。 Where E/(1-ν) is the biaxial elastic modulus of the tantalum wafer (crystal face (100): 1.805×10 11 Pa), h is the thickness of the tantalum wafer [m], and t is the thickness of the tantalum oxide layer [m], R is the difference [m] between the radius of curvature of the tantalum wafer before the formation of the tantalum resin layer and the radius of curvature of the tantalum wafer after the formation of the tantalum oxide layer.

而且,形成矽氧樹脂層前後之矽晶片之曲率半徑的差R係取決於矽晶片之厚度h、矽晶片之彈性率E、矽晶片之帕松比ν、膜厚t及拉伸應力σ。只要於經形成於矽晶片之單面的膜之面內方向產生拉伸應力σ,則如自前述式(1)可明白的,產生於膜之面內方向之應力σ愈大,前述曲率半徑的差R即會變得愈大,即矽晶片之翹曲會變得愈大。 Further, the difference R in the radius of curvature of the tantalum wafer before and after the formation of the tantalum resin layer depends on the thickness h of the tantalum wafer, the elastic modulus E of the tantalum wafer, the Pason ratio ν of the tantalum wafer, the film thickness t, and the tensile stress σ. As long as the tensile stress σ is generated in the in-plane direction of the film formed on one side of the tantalum wafer, as can be understood from the above formula (1), the larger the stress σ generated in the in-plane direction of the film, the aforementioned radius of curvature The difference R will become larger, that is, the warpage of the wafer will become larger.

因而,只要調查形成矽氧樹脂層前後之矽晶片之曲率半徑的差R與矽氧樹脂層之膜厚t,即可求得矽氧樹脂層之收縮應力。另外,曲率半徑R可藉由下述方式求得:於單結晶矽晶片之單面形成矽氧樹脂層,並使用薄膜應力測定裝置,以雷射光掃描形成有矽氧樹脂層之矽晶片表面,並從反射光之方向讀取R。 Therefore, the shrinkage stress of the silicone resin layer can be determined by investigating the difference R between the curvature radii of the tantalum wafer before and after the formation of the silicone resin layer and the thickness t of the tantalum oxide layer. Further, the radius of curvature R can be obtained by forming a silicone resin layer on one side of the single crystal germanium wafer, and scanning the surface of the germanium wafer on which the tantalum resin layer is formed by laser light using a film stress measuring device. And read R from the direction of the reflected light.

矽氧樹脂層14之收縮應力的大小雖然並無特別限制,但基於於使硬化性有機聚矽氧交聯硬化而形成矽氧樹脂層14之製程後,於冷卻過程中可防止裂痕出現,並且可更抑制所製出之玻璃積層體10之翹曲這點,則宜在50MPa以下,且45MPa以下較佳。而下限雖無特別限制,但 通常多在15MPa以上。 Although the size of the shrinkage stress of the silicone resin layer 14 is not particularly limited, it is prevented from occurring in the cooling process based on the process of forming the epoxy resin layer 14 by hardening the curable organic polyfluorene. The warpage of the glass laminate 10 to be produced can be further suppressed, and it is preferably 50 MPa or less and 45 MPa or less. The lower limit is not particularly limited, but Usually more than 15MPa.

矽氧樹脂層14係由含有預定之有機矽氧基單元之矽氧樹脂所構成。又,矽氧樹脂通常可藉由硬化處理將可成為該矽氧樹脂之硬化性有機聚矽氧予以交聯硬化而得。 The epoxy resin layer 14 is composed of a silicone resin containing a predetermined organic methoxy group. Further, the epoxy resin can be obtained by crosslinking and hardening the curable organopolyoxygen which can be the epoxy resin by a hardening treatment.

本發明之硬化性有機聚矽氧係使為單體之水解性有機矽烷化合物之混合物(單體混合物)進行部分水解縮合反應而得之部分水解縮合物(有機聚矽氧)。又,部分水解縮合物亦可含有未反應之單體。 The curable organic polyfluorene oxygen of the present invention is a partially hydrolyzed condensate (organic polyoxygen) obtained by subjecting a mixture (monomer mixture) of a monomeric hydrolyzable organodecane compound to a partial hydrolysis condensation reaction. Further, the partially hydrolyzed condensate may also contain unreacted monomers.

為了使硬化性有機聚矽氧交聯硬化,通常是藉由加熱來進行交聯反應而使其硬化(即,使其熱硬化)。而且,藉由使硬化性有機聚矽氧熱硬化可獲得矽氧樹脂。惟,硬化亦有未必需要加熱之情形,亦可使其室溫硬化。 In order to harden the curable organopolyfluorene cross-linking, it is usually hardened by heat-crosslinking reaction (that is, it is thermally hardened). Further, a silicone resin can be obtained by thermally curing the curable organopolysiloxane. However, hardening does not necessarily require heating, and it can harden the room temperature.

一般之矽氧樹脂(有機聚矽氧)係由被稱為M單元之單官能有機矽氧基單元、被稱為D單元之雙官能有機矽氧基單元、被稱為T單元之3官能有機矽氧基單元或被稱為Q單元之4官能有機矽氧基單元構成。另外,Q單元雖為不具有鍵結於矽原子之有機基(具有鍵結於矽原子之碳原子的有機基)單元,但於本發明中仍視為有機矽氧基單元(含矽鍵單元)。以下將形成T單元之單體稱「T單體」。且將形成M單元、D單元及Q單元之單體亦同樣稱「M單體」、「D單體」及「Q單體」。 The general oxime resin (organopolyoxyl) is a monofunctional organic decyloxy unit called M unit, a bifunctional organic decyloxy unit called D unit, and a trifunctional organic compound called a T unit. A decyloxy unit or a tetrafunctional organomethoxy unit called a Q unit. Further, although the Q unit is a unit having no organic group bonded to a ruthenium atom (an organic group having a carbon atom bonded to a ruthenium atom), it is still regarded as an organic oxime unit (including a fluorene bond unit) in the present invention. ). Hereinafter, the monomer forming the T unit will be referred to as "T monomer". The monomers forming the M unit, the D unit, and the Q unit are also referred to as "M monomer", "D monomer", and "Q monomer".

於有機矽氧基單元中,由於矽氧烷鍵係2個矽原子透過1個氧原子鍵結之鍵,故於矽氧烷鍵中每1個矽原子 之氧原子視為1/2個,式中以O1/2來表示。更具體來說,例如,於一個D單元中,其1個矽原子係與2個氧原子鍵結,且各個氧原子係與其他單元之矽原子鍵結,從而其式子即為-O1/2-(R)2Si-O1/2-。由於存在有2個O1/2,故D單元一般是以(R)2SiO2/2來表示。 In the organic decyloxy unit, since the ruthenium atom bonds two 矽 atoms through a bond of one oxygen atom, the oxygen atom per 矽 atom in the siloxane bond is regarded as 1/2. In the formula, it is represented by O 1/2 . More specifically, for example, in one D unit, one of its ruthenium atoms is bonded to two oxygen atoms, and each oxygen atom is bonded to a ruthenium atom of another unit, so that the formula is -O 1 /2 -(R) 2 Si-O 1/2 -. Since there are two O 1/2 , the D unit is generally represented by (R) 2 SiO 2/2 .

另外,於以下說明中,鍵結於其他矽原子之氧原子O*係用以鍵結2個矽原子間之氧原子,意指Si-O-Si所示鍵結中之氧原子。因此,O*於2個有機矽氧基單元之矽原子間存在1個。 Further, in the following description, the oxygen atom O * bonded to another germanium atom is used to bond an oxygen atom between two germanium atoms, and means an oxygen atom in the bond shown by Si-O-Si. Therefore, O * exists between the ruthenium atoms of the two organic methoxy units.

一般而言,「T單元」意指R-SiO3/2(R表示氫原子或有機基)所示之有機矽氧基單元。即,T單元是具有1個矽原子,以及具有鍵結於該矽原子之1個氫原子或1價的有機基,及3個鍵結於其他矽原子之氧原子O*的單元。 In general, "T unit" means an organic decyloxy unit represented by R-SiO 3/2 (R represents a hydrogen atom or an organic group). That is, the T unit is a unit having one deuterium atom and having one hydrogen atom or a monovalent organic group bonded to the deuterium atom, and three oxygen atoms O * bonded to the other deuterium atom.

但是,於本說明書中,以具有可鍵結於其他矽原子之官能基來取代鍵結於其他矽原子之氧原子O*的一部分或全部時,亦將其視為T單元。可鍵結於其他矽原子之官能基係羥基或藉由水解成為羥基的基(以下,稱「水解性基」)。更具體而言,於本說明書中,T單元依據鍵結於其他矽原子之氧原子O*與可鍵結於其他矽原子之官能基之合計為3個,且與鍵結於其他矽原子之氧原子O*與可鍵結於其他矽原子之官能基之數量的不同,T單元可被分類為所謂T1單元、T2單元及T3單元之3種單元。T1單元與鍵結於其他矽原子之氧原子O*之數量為1個,T2單元其氧原子O*之數量為2個,而T3單元其氧原子O*之數量則為3個。另外,於本說明書中, 將可鍵結於其他矽原子之1價的官能基以Z來表示。 However, in the present specification, when a part or all of the oxygen atom O * bonded to another germanium atom is replaced by a functional group which may be bonded to another germanium atom, it is also regarded as a T unit. A functional group-based hydroxyl group which may be bonded to another germanium atom or a group which is hydrolyzed to a hydroxyl group (hereinafter referred to as "hydrolyzable group"). More specifically, in the present specification, the T unit is based on a total of three oxygen atoms O * bonded to other deuterium atoms and functional groups that can be bonded to other deuterium atoms, and is bonded to other deuterium atoms. The oxygen atom O * differs from the number of functional groups that can be bonded to other germanium atoms, and the T unit can be classified into three units of a so-called T1 unit, a T2 unit, and a T3 unit. T1 unit number bonded to a silicon atom of the other oxygen atom O * is a sum, T2 means the oxygen atom O * is the number 2, and T3 means the oxygen atom O * 3 compared to the number. Further, in the present specification, a monovalent functional group which may be bonded to another deuterium atom is represented by Z.

單體(水解性有機矽烷化合物)通常以(R’-)aSi(-Z)4-a來表示。惟,a為0~3之整數,R’為氫原子或1價的有機基,Z則表示羥基或水解性基。該化學式中,a=3之化合物為M單體,a=2之化合物為D單體,a=1之化合物為T單體,而a=0之化合物為Q單體。單體中,Z基為一般水解性基。又,若R’存在有2或3個時(a為2或3時),多數R’亦可相異。 The monomer (hydrolyzable organodecane compound) is usually represented by (R'-) a Si(-Z) 4-a . However, a is an integer of 0 to 3, R' is a hydrogen atom or a monovalent organic group, and Z represents a hydroxyl group or a hydrolyzable group. In the formula, the compound of a=3 is an M monomer, the compound of a=2 is a D monomer, the compound of a=1 is a T monomer, and the compound of a=0 is a Q monomer. Among the monomers, the Z group is a general hydrolyzable group. Further, if there are two or three R's (a is 2 or 3), most of the R's may be different.

部分水解縮合物之硬化性有機聚矽氧,可藉由將單體之Z基之一部分轉換成氧原子O*之反應而得。單體之Z基為水解性基時,Z基會因水解反應而轉換為羥基,接著藉由鍵結於個別之矽原子的2個羥基間之脫水縮合反應,2個矽原子會透過氧原子O*而鍵結。硬化性有機聚矽氧中會殘留有羥基(或未經水解之Z基),則於硬化性有機聚矽氧硬化時該等羥基或Z基會與前述同樣地發生反應而硬化。硬化性有機聚矽氧之硬化物通常會變成3次元交聯之聚合物(矽氧樹脂)。於硬化時,硬化性有機聚矽氧之Z基會轉換成O*,但推測Z基(特別是羥基)之一部分會殘留而成為具有羥基之硬化物。而於已在高溫下使硬化性有機聚矽氧硬化的情況時,亦會有變成幾乎不殘留有羥基之硬化物的情形。 The sclerosing organopolyfluorene which partially hydrolyzes the condensate can be obtained by a reaction of converting a part of the Z group of the monomer into an oxygen atom O * . When the Z group of the monomer is a hydrolyzable group, the Z group is converted into a hydroxyl group by a hydrolysis reaction, and then by a dehydration condensation reaction between two hydroxyl groups bonded to an individual germanium atom, two germanium atoms pass through the oxygen atom. O * and bonding. When a hydroxyl group (or an unhydrolyzed Z group) remains in the curable organic polyfluorene, the hydroxyl group or the Z group is reacted and hardened in the same manner as described above in the curing of the curable organopolysiloxane. The hardened organic polyfluorene hardened material usually becomes a three-dimensional crosslinked polymer (oxygenated resin). At the time of hardening, the Z group of the curable organopolyoxygen is converted into O * , but it is presumed that a part of the Z group (particularly a hydroxyl group) remains and becomes a cured product having a hydroxyl group. On the other hand, when the curable organic polyfluorene is hardened at a high temperature, there is a case where a cured product of a hydroxyl group hardly remains.

若單體之Z基為水解性基時,其Z基可列舉烷氧基、氯原子、醯氧基及異氰酸基等。在許多情況下,單體係使用Z基為烷氧基之單體。烷氧基與氯原子等相較下為一反應性較低之水解性基,且於使用Z基為烷氧基所得之硬化 性有機聚矽氧中,Z基大多係羥基與未反應之烷氧基一同存在。而當單體之Z基為反應性較高之水解性基(例如氯原子)時,使用該單體所得之硬化性有機聚矽氧中Z基幾乎為羥基。因此,於一般之硬化性有機聚矽氧中,構成其之各單元中之Z基大多不是由羥基構成就是由羥基與烷氧基構成。 When the Z group of the monomer is a hydrolyzable group, the Z group may, for example, be an alkoxy group, a chlorine atom, a decyloxy group or an isocyanate group. In many cases, a single system uses a monomer having a Z group as an alkoxy group. The alkoxy group is a less reactive hydrolyzable group than the chlorine atom and the like, and is hardened by using the Z group as an alkoxy group. In the organopolyorganosiloxane, the Z group is mostly a hydroxyl group which is present together with the unreacted alkoxy group. On the other hand, when the Z group of the monomer is a highly reactive hydrolyzable group (for example, a chlorine atom), the Z group in the curable organopolysiloxane obtained by using the monomer is almost a hydroxyl group. Therefore, in the general hardening organic polyfluorene oxide, the Z group in each of the units constituting it is mostly composed of a hydroxyl group or a hydroxyl group and an alkoxy group.

(矽氧樹脂) (oxygenated resin)

構成矽氧樹脂層14之矽氧樹脂,具有T3所示之有機矽氧基單元(以後,亦僅稱「T3單元」),且相對於全部有機矽氧基單元,T3所示之有機矽氧基單元的合計比率為80~100莫耳%,以所得之矽氧樹脂層14之耐熱性優異且玻璃基板16之剝離更容易進行之觀點而言,宜為82~100莫耳%,更佳為85~100莫耳%。總之,矽氧樹脂含有T3所示之有機矽氧基單元作為主成分。 The oxime resin constituting the oxime resin layer 14 has an organic decyloxy unit represented by T3 (hereinafter, also referred to as "T3 unit"), and an organic oxime represented by T3 with respect to all the organic decyloxy units. The total ratio of the base units is from 80 to 100 mol%, and is preferably from 82 to 100 mol%, more preferably from the viewpoint that the heat resistance of the obtained epoxy resin layer 14 is excellent and the peeling of the glass substrate 16 is easier. It is 85~100% by mole. In summary, the epoxy resin contains an organic decyloxy unit represented by T3 as a main component.

T3:R-SiO3/2 T3: R-SiO 3/2

(式中,R表示苯基或甲基)。 (wherein R represents a phenyl group or a methyl group).

另外,T3所示之有機矽氧基單元相當於一個前述T單元。且矽氧樹脂除了T3所示之有機矽氧基單元以外,亦可含有其他單元,而作為其他單元則可列舉M單元、D單元、T1單元、T2單元、及Q單元。 Further, the organic decyloxy unit represented by T3 corresponds to one of the aforementioned T units. Further, the epoxy resin may contain other units in addition to the organic decyloxy unit represented by T3, and examples of other units include M unit, D unit, T1 unit, T2 unit, and Q unit.

而其中,以剝離時矽氧樹脂層14不會發生內聚破壞,矽氧樹脂層14之機械強度優異及玻璃基板16之剝離性更優異之觀點而言,又以含下述Q所示之有機矽氧基單元(所謂Q單元)為佳。而Q單元之含量雖無特別限制,但相對於全部有機矽氧基單元,宜在1莫耳%以上,且5莫耳%以上較佳。 其上限並無特別限制,但以下述之觀點來說則宜在20莫耳%以下:因交聯度增加導致矽氧樹脂層14之脆性降低,而於矽氧樹脂層14剝離時恐有伴隨引發內聚破壞之虞;以及,恐有引發因伴隨硬化收縮之收縮應力的增大所致之玻璃複合體翹曲之疑慮。 In addition, the silicone resin layer 14 does not undergo cohesive failure at the time of peeling, and the mechanical strength of the silicone resin layer 14 is excellent and the peeling property of the glass substrate 16 is more excellent, and it is represented by the following Q. An organic decyloxy unit (so-called Q unit) is preferred. The content of the Q unit is not particularly limited, but is preferably 1 mol% or more and 5 mol% or more based on the total of the organic decyloxy unit. The upper limit is not particularly limited, but is preferably 20 mol% or less from the viewpoint of the fact that the brittleness of the epoxy resin layer 14 is lowered due to an increase in the degree of crosslinking, and there is a fear that the epoxy resin layer 14 is peeled off. The enthalpy of causing cohesive failure; and fear of causing warpage of the glass composite due to an increase in shrinkage stress accompanying hardening shrinkage.

Q:SiO4/2 Q: SiO 4/2

另外,前述「全部有機矽氧基單元」意指矽氧樹脂中所含之M單元、D單元、T單元、及Q單元之合計。且M單元、D單元、T單元(T1~T3單元)、及Q單元之數量(莫耳量)的比率,可自依據29Si-NMR之峰面積比的值來計算。 In addition, the "all organic methoxy group" means the total of the M unit, the D unit, the T unit, and the Q unit contained in the oxime resin. The ratio of the number of M units, D units, T units (T1 to T3 units), and Q units (molar amount) can be calculated from the value of the peak area ratio of 29 Si-NMR.

於矽氧樹脂層14中之矽氧樹脂中,T3中R為苯基之有機矽氧基單元(A-1)與T3中R為甲基之有機矽氧基單元(B-1)之莫耳比((A-1)/(B-1))為80/20~20/80(另外,滿足(A-1)+(B-1)=100之關係)。而其中,以更容易將玻璃基板剝離之觀點來說,莫耳比((A-1)/(B-1))宜為75/25~20/80,且70/30~20/80更佳。 In the epoxy resin in the epoxy resin layer 14, in the T3, R is an organic decyloxy unit (A-1) of a phenyl group and an organic decyloxy unit (B-1) wherein T is a methyl group in T3. The ear ratio ((A-1)/(B-1)) is 80/20 to 20/80 (in addition, the relationship of (A-1) + (B-1) = 100 is satisfied). Among them, in terms of making it easier to peel off the glass substrate, the molar ratio ((A-1)/(B-1)) is preferably 75/25 to 20/80, and 70/30 to 20/80 is more good.

「R為苯基之有機矽氧基單元(A-1)」意指以下P-T3所示之有機矽氧基單元。Ph表示苯基。 The "organomethoxy group (A-1) wherein R is a phenyl group" means an organic decyloxy unit represented by the following P-T3. Ph represents a phenyl group.

P-T3:Ph-SiO3/2 P-T3: Ph-SiO 3/2

又,「R為甲基之有機矽氧基單元(B-1)」意指以下M-T3所示之有機矽氧基單元。 Further, "organic methoxy unit (B-1) wherein R is a methyl group" means an organic decyloxy unit represented by the following M-T3.

M-T3:Me-SiO3/2 M-T3: Me-SiO 3/2

前述矽氧樹脂可使用眾所周知之材料製造。 The aforementioned silicone resin can be produced using well-known materials.

如前述,作為藉由硬化處理而可成為前述矽氧樹脂之 硬化性有機聚矽氧,係使用例如使為單體之水解性有機矽烷化合物之混合物進行部分水解縮合反應而得之部分水解縮合物(有機聚矽氧)。作為該單體,更具體來說係使用(Me-)Si(-Z)3所示之水解性有機矽烷化合物及(Ph-)Si(-Z)3所示之水解性有機矽烷化合物。另外,Z基表示羥基或水解性基,舉例來說,水解性基可列舉氯原子等之鹵素原子、烷氧基、醯基、胺基、及烷氧烷氧基等。 As described above, the curable organic polyfluorene which can be the above-described oxime resin by the curing treatment is, for example, a partially hydrolyzed condensate obtained by subjecting a mixture of a monomeric hydrolyzable organodecane compound to a partial hydrolysis condensation reaction. (organic polyoxo). More specifically, as the monomer, a hydrolyzable organodecane compound represented by (Me-)Si(-Z) 3 and a hydrolyzable organodecane compound represented by (Ph-)Si(-Z) 3 are used. In addition, the Z group represents a hydroxyl group or a hydrolyzable group, and examples of the hydrolyzable group include a halogen atom such as a chlorine atom, an alkoxy group, a mercapto group, an amine group, and an alkoxyalkoxy group.

另外,水解縮合反應係一種自T單體生成T1單元,自T1單元生成T2單元,自T2單元生成T3單元之反應。且推測縮合反應之反應速度會依下述順序變慢:自1個以上之水解性基經轉換成羥基之T單體生成T1單元之縮合反應;自T1單元生成T2單元之縮合反應;自T2單元生成T3單元之縮合反應。考量到水解性基之水解反應,推測隨著反應進行,各單元存在量的尖峰亦會自T單體往T3單元移動。於反應條件較溫和的情況時,推測存在量尖峰之移動會較整齊地進行。 Further, the hydrolysis condensation reaction is a reaction in which a T1 unit is generated from a T monomer, a T2 unit is generated from a T1 unit, and a T3 unit is generated from a T2 unit. It is presumed that the reaction rate of the condensation reaction is slowed down in the following order: a condensation reaction of T1 units from one or more hydrolyzable groups converted to hydroxyl groups; a condensation reaction of T2 units from T1 units; from T2 The unit generates a condensation reaction of the T3 unit. Considering the hydrolysis reaction of the hydrolyzable group, it is presumed that as the reaction proceeds, the peak of the amount of each unit will also move from the T monomer to the T3 unit. In the case where the reaction conditions are mild, it is presumed that the movement of the amount spikes will proceed neatly.

作為可成為前述矽氧樹脂之硬化性有機聚矽氧,如前述,從反應之控制及處理等之面向來說,係使用自水解性有機矽烷化合物之混合物而得之部分水解縮合物(有機聚矽氧)。部分水解縮合物係將水解性有機矽烷化合物混合成前述各有機矽氧基單元之比率而得單體混合物後,使該單體混合物進行部分水解縮合而得者。使其部分水解縮合之方法並無特別限制。通常是於觸媒存在下使水解性有機矽烷化合物之混合物在溶劑中進行反應來製造。觸媒則 可使用酸觸媒或鹼觸媒。又,對於水解反應通常宜使用水。使用於本發明之部分水解縮合物宜為於溶劑中使水解性有機矽烷化合物之混合物在酸或鹼水溶液之存在下進行反應而製成者。 As the curable organic polyfluorene which can be the above-mentioned oxime resin, as described above, a partial hydrolysis condensate (organic polymerization) obtained by using a mixture of hydrolyzable organodecane compounds is used from the viewpoint of control and treatment of the reaction. Oxygen). The partially hydrolyzed condensate is obtained by mixing a hydrolyzable organodecane compound into a ratio of each of the above organic decyloxy units to obtain a monomer mixture, and then partially hydrolyzing and condensing the monomer mixture. The method of partially hydrolyzing and condensing is not particularly limited. It is usually produced by reacting a mixture of hydrolyzable organodecane compounds in a solvent in the presence of a catalyst. Catalyst An acid catalyst or a base catalyst can be used. Further, it is preferred to use water for the hydrolysis reaction. The partially hydrolyzed condensate used in the present invention is preferably produced by reacting a mixture of hydrolyzable organodecane compounds in the presence of an acid or an aqueous alkali solution in a solvent.

所使用之水解性有機矽烷化合物雖然可舉前述(Me-)Si(-Z)3所示之水解性有機矽烷化合物及(Ph-)Si(-Z)3所示之水解性有機矽烷化合物,但其中以所得之硬化性有機聚矽氧之處理性優異、耐熱性高及可更容易將玻璃基板16剝離之觀點來說,則宜使用苯基三氯矽烷(下述式(1)所示之化合物)及甲基三氯矽烷(下述式(2)所示之化合物)。另外,式(1)中之Ph表示苯基。 The hydrolyzable organodecane compound (Me-)Si(-Z) 3 and the hydrolyzable organodecane compound represented by (Ph-)Si(-Z) 3 may be mentioned. However, in view of the fact that the obtained curable organic polyfluorene is excellent in practicability, high in heat resistance, and the glass substrate 16 can be more easily peeled off, phenyltrichloromethane is preferably used (shown by the following formula (1)). The compound) and methyltrichloromethane (a compound represented by the following formula (2)). Further, Ph in the formula (1) represents a phenyl group.

另外,如後述,於形成硬化性有機聚矽氧層時,雖然是使用含硬化性有機聚矽氧之組成物,但以可更加提升組成物中之硬化性有機聚矽氧之穩定性的觀點來說,亦可將硬化聚矽氧之末端予以封端化。更具體來說,係使硬化性有機聚矽氧中之末端Si-OH,於酸觸媒下(例如醋酸存在下)與醇進行反應,而可於去除水的同時將Si-OH保護封 端。舉例來說,使用甲醇時,會形成Si-OMe基。另外,所使用之醇的種類並無特別限制,可列舉甲醇、乙醇、1-丙醇、及1-丁醇等之低沸點之醇。而於該等之中,從與Si-OH基之反應性及硬化性有機聚矽氧之溶解性良好之觀點來看,則以甲醇及乙醇為佳。 Further, as described later, in the case of forming a curable organic polyfluorene oxide layer, a composition containing a curable organic polyfluorene oxide is used, but the stability of the curable organic polyfluorene in the composition can be further improved. In addition, the end of the hardened polyoxyl oxide can also be blocked. More specifically, the terminal Si-OH in the hardenable organopolyoxygen is reacted with an alcohol under an acid catalyst (for example, in the presence of acetic acid), and the Si-OH protective seal can be removed while removing water. end. For example, when methanol is used, a Si-OMe group is formed. Further, the type of the alcohol to be used is not particularly limited, and examples thereof include low-boiling alcohols such as methanol, ethanol, 1-propanol, and 1-butanol. Among these, methanol and ethanol are preferred from the viewpoints of good reactivity with the Si-OH group and solubility of the curable organic polyfluorene.

(硬化性有機聚矽氧之適宜態樣) (suitable form of hardening organic polyfluorene)

作為前述硬化性有機聚矽氧之適宜態樣之一,可舉如下之有機聚矽氧(以下,亦稱「有機聚矽氧X」):具有下述T1~T3所示之有機矽氧基單元中之至少任一者,且相對於全部有機矽氧基單元,下述T1~T3所示之有機矽氧基單元的合計比率為80~100莫耳%;下述T1~T3中R為苯基之有機矽氧基單元(A-2)與下述T1~T3中R為甲基之有機矽氧基單元(B-2)之莫耳比((A-2)/(B-2))為80/20~20/80。只要為該有機聚矽氧,則可容易獲得所欲之矽氧樹脂。 One of the suitable aspects of the curable organic polyfluorene oxide is an organic polyfluorene oxide (hereinafter also referred to as "organic polyxylene oxide X") having an organic decyloxy group represented by the following T1 to T3. At least one of the units, and the total ratio of the organic decyloxy units represented by the following T1 to T3 is 80 to 100 mol% with respect to all of the organic decyloxy units; R in the following T1 to T3 is The molar ratio of the organic decyloxy unit (A-2) of the phenyl group to the organic decyloxy unit (B-2) wherein R is a methyl group in the following T1 to T3 ((A-2)/(B-2) )) is 80/20~20/80. As long as it is the organic polyfluorene, the desired epoxy resin can be easily obtained.

T1:R-Si(-OX)2O1/2 T1: R-Si(-OX) 2 O 1/2

T2:R-Si(-OX)O2/2 T2: R-Si(-OX)O 2/2

T3:R-SiO3/2 T3: R-SiO 3/2

另外,式中,R表示苯基或甲基。X則表示氫原子或碳數1~6之烷基。 Further, in the formula, R represents a phenyl group or a methyl group. X represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms.

上述式中R不限於1種,T1、T2及T3個別之R亦可不同。 In the above formula, R is not limited to one type, and R of each of T1, T2 and T3 may be different.

又,-OX於T1單元及T2單元之間可相同亦可相異。且T1單元中之2個-OX亦可相異,例如,亦可其中一方為羥基而另一方為烷氧基。又,若2個-OX均為烷氧基時,其等之烷氧基亦可為不同之烷氧基。 Further, -OX may be the same or different between the T1 unit and the T2 unit. Further, two of the T1 units may be different from each other. For example, one of them may be a hydroxyl group and the other may be an alkoxy group. Further, when both -OX are alkoxy groups, the alkoxy groups may be different alkoxy groups.

以下將不具有鍵結2個矽原子之氧原子(O*)且僅具有3個-OX之T單元以「T0」稱之。T0實際上相當於未反應之T單體,而非有機矽烷氧基單元(含矽鍵單元)。該T0可依與T1~T3之單元解析中T1~T3同樣方式做測定。 Hereinafter, a T unit having no oxygen atom (O * ) in which two deuterium atoms are bonded and having only three -OX is referred to as "T0". T0 is actually equivalent to an unreacted T monomer, not an organodecyloxy unit (containing a fluorene bond unit). The T0 can be measured in the same manner as T1~T3 in the unit analysis of T1~T3.

有機聚矽氧X中之T1~T3之單元可藉由核磁共振分析(29Si-NMR)測定並解析矽原子之鍵結狀態。T0~T3之單元數量(莫耳量)的比係自29Si-NMR之峰面積比求得。 The unit of T1 to T3 in the organic polyoxo X can be determined by nuclear magnetic resonance analysis ( 29 Si-NMR) and the bonding state of the deuterium atom is analyzed. The ratio of the number of units (molar amount) of T0 to T3 was obtained from the peak area ratio of 29 Si-NMR.

另外,有機聚矽氧X之質量平均分子量Mw、數目平均分子量Mn及分散度Mw/Mn,係指藉由凝膠滲透層析法以聚苯乙烯為標準物質而經測定之值。而所述之有機聚矽氧X之特性並非指1個分子之特性,而是指以各分子之平均特性求得者。 Further, the mass average molecular weight Mw, the number average molecular weight Mn, and the dispersity Mw/Mn of the organopolyxylene X are values measured by gel permeation chromatography using polystyrene as a standard substance. The characteristics of the organopolyoxygen X described above do not refer to the characteristics of one molecule, but to the average characteristics of each molecule.

有機聚矽氧X中前述T1~T3所示之有機矽氧基單元之合計比率如前述,相對於全部有機矽氧基單元宜為80~100莫耳%,而以所得之矽氧樹脂層14之耐熱性優異,且玻璃基板16之剝離可較容易進行之觀點來說則宜為82~100莫耳%,且85~100莫耳%更佳。 The total ratio of the organic decyloxy units represented by the above T1 to T3 in the organic polyoxo X is as described above, and is preferably from 80 to 100 mol% based on the total of the organic decyloxy units, and the obtained oxirane resin layer 14 is used. The heat resistance is excellent, and from the viewpoint that the peeling of the glass substrate 16 can be easily performed, it is preferably 82 to 100 mol%, and more preferably 85 to 100 mol%.

另外,於有機聚矽氧X中,基於處理性之觀點,宜至少含有前述T3單元,更佳為至少含有前述T2單元及T3單元。且各種檢討之結果可知,一旦Ph基(苯基)變多,則T1單元之比率即會變多。而T1單元變多的話,因矽氧樹脂層製作過程中於硬化時收縮應力會變大,故T1單元較少者收縮應力會降低而較理想。 Further, in the organopolyoxygen X, it is preferred to contain at least the above T3 unit from the viewpoint of handleability, and more preferably at least the above T2 unit and T3 unit. As a result of various reviews, it is known that as the number of Ph groups (phenyl groups) increases, the ratio of T1 units increases. When the number of T1 units is increased, the shrinkage stress is increased during hardening of the silicone resin layer, so that the shrinkage stress of the T1 unit is less, which is preferable.

又,有機聚矽氧X亦可含有前述T1~T3所示之有機矽氧 基單元以外之其他單元,而作為其他單元則可列舉M單元、D單元及Q單元。 Further, the organopolyoxygen X may also contain the above-mentioned organic oxime represented by T1 to T3. Other units than the base unit, and other units include M units, D units, and Q units.

T體之硬化性有機聚矽氧一般為人所知的是聚苯基聚矽氧及聚甲基聚矽氧等,而矽醇末端聚苯基聚矽氧係將PhSiCl3予以水解後所得之分子量為數百~數千程度的寡聚物。若使用該寡聚物來製作0.1mm以上厚度之硬化物的話,因非常脆弱而會不堪使用。然而,卻可成為具有優異耐熱性之矽氧樹脂。 The sclerosing organic polyfluorene of the T body is generally known as polyphenyl polyfluorene oxide and polymethyl polyfluorene, and the sterol terminal polyphenyl polyoxyl is obtained by hydrolyzing PhSiCl 3 . An oligomer having a molecular weight of several hundred to several thousand. When the oligomer is used to produce a cured product having a thickness of 0.1 mm or more, it is extremely weak and can be used. However, it can be a silicone resin having excellent heat resistance.

另一方面,於矽原子上之取代基為甲基等之脂族烴基時,因可提供矽醇末端之RSiZ3型的單體之反應性高,而導致所得之水解-縮合物之分子量幾乎變成1萬以上。因此對溶劑之溶解性差,從而為使該縮合物溶解需要大量的溶劑,故雖可獲得用於塗布等之薄膜,但具有某程度厚度之硬化物則因會產生裂痕等而難製得。 On the other hand, when the substituent on the ruthenium atom is an aliphatic hydrocarbon group such as a methyl group, the reactivity of the monomer of the RSiZ 3 type which can provide a sterol terminal is high, and the molecular weight of the obtained hydrolysis-condensate is almost It becomes 10,000 or more. Therefore, the solubility in a solvent is inferior, and a large amount of solvent is required to dissolve the condensate. Therefore, a film for coating or the like can be obtained, but a cured product having a certain thickness is difficult to be obtained due to cracks or the like.

因此,宜使用已兼顧耐熱性及反應性且已提升溶解性之前述硬化性有機聚矽氧X。 Therefore, it is preferable to use the above-mentioned curable organopolyoxyxene X which has been considered to have both heat resistance and reactivity and has improved solubility.

於硬化性有機聚矽氧X中,T1~T3中R為苯基之有機矽氧基單元(A-2)與T1~T3中R為甲基之有機矽氧基單元(B-2)之莫耳比((A-2)/(B-2))宜為80/20~20/80(另外,滿足(A-2)+(B-2)=100之關係)。而其中,以該硬化性有機聚矽氧之溶解性優異,且可調製對經洗浄之玻璃基板具有適度之表面張力(即塗布性佳)的塗布液,並且可減低硬化時之收縮應力之觀點來說,莫耳比((A-2)/(B-2))宜為75/25~20/80,且70/30~20/80更佳。 In the sclerosing organopolyoxyxylene X, in the T1 to T3, R is an organic decyloxy unit (A-2) of a phenyl group and an organic decyloxy unit (B-2) wherein T is a methyl group in T1 to T3. The molar ratio ((A-2)/(B-2)) is preferably 80/20 to 20/80 (in addition, the relationship of (A-2) + (B-2) = 100 is satisfied). Among them, the solubility of the curable organic polyfluorene is excellent, and a coating liquid having a moderate surface tension (that is, good coatability) to the washed glass substrate can be prepared, and the viewpoint of shrinkage stress at the time of hardening can be reduced. For example, Mobi ((A-2)/(B-2)) should be 75/25~20/80, and 70/30~20/80 is better.

「R為苯基之有機矽氧基單元(A-2)」意指包含下述單元之概念:R為苯基之T1單元(以下之P-T1)、R為苯基之T2單元(以下之P-T2)、及R為苯基之T3單元(以下之P-T3)。以下,式P-T1~P-T3中,Ph表示苯基。 "R is an organic decyloxy unit (A-2) of a phenyl group" means a concept including a unit in which R is a T1 unit of a phenyl group (hereinafter P-T1), and R is a T2 unit of a phenyl group (hereinafter) P-T2), and R is a T3 unit of a phenyl group (hereinafter P-T3). Hereinafter, in the formulae P-T1 to P-T3, Ph represents a phenyl group.

P-T1:Ph-Si(-OX)2O1/2 P-T1: Ph-Si(-OX) 2 O 1/2

P-T2:Ph-Si(-OX)O2/2 P-T2: Ph-Si(-OX)O 2/2

P-T3:Ph-SiO3/2 P-T3: Ph-SiO 3/2

因此,前述有機矽氧基單元(A-2)之含量意指前述P-T1所示單元之含量、前述P-T2所示單元之含量、及前述P-T3所示單元之含量的合計量。 Therefore, the content of the above-mentioned organomethoxy group (A-2) means the total amount of the unit represented by the above P-T1, the content of the unit represented by the above P-T2, and the total content of the unit represented by the above P-T3. .

又,「R為甲基之有機矽氧基單元(B-2)」意指包含下述單元之概念:R為甲基之T1單元(以下之M-T1)、R為甲基之T2單元(以下之M-T2)、及R為甲基之T3單元(以下之M-T3)。以下,式M-T1~M-T3中,Me表示甲基。 Further, "organic methoxy unit (B-2) in which R is a methyl group" means a concept including a unit in which R is a T1 unit of a methyl group (hereinafter, M-T1), and R is a T2 unit of a methyl group. (M-T2 below), and T is a T3 unit of methyl group (hereinafter M-T3). Hereinafter, in the formulae M-T1 to M-T3, Me represents a methyl group.

M-T1:Me-Si(-OX)2O1/2 M-T1: Me-Si(-OX) 2 O 1/2

M-T2:Me-Si(-OX)O2/2 M-T2: Me-Si(-OX)O 2/2

M-T3:Me-SiO3/2 M-T3: Me-SiO 3/2

因此,前述有機矽氧基單元(B-2)之含量意指前述M-T1所示單元之含量、前述M-T2所示單元之含量、及前述M-T3所示單元之含量的合計量。 Therefore, the content of the above-mentioned organomethoxy group (B-2) means the total amount of the unit represented by the above M-T1, the content of the unit represented by the above M-T2, and the total content of the unit represented by the above M-T3. .

硬化性有機聚矽氧(特別是前述硬化性有機聚矽氧X)宜按下述比例含有前述T1~T3所示有機矽氧基單元:以單元之個數比例(莫耳量)計,T1:T2:T3=0~5:20~50:50~80(另外滿足T1+T2+T3=100之關係)。只要在前述範圍, 可更容易將玻璃基板16剝離。換言之,前述T1:T2:T3之比亦可稱T1單元之比率為0~5莫耳%,T2單元之比率為20~50莫耳%,T3單元之比率為50~80莫耳%。 The curable organopolyoxygen (especially the aforementioned curable organopolyoxygen X) preferably contains the above-mentioned organic decyloxy unit represented by T1 to T3 in the following ratio: in terms of the number of units (molar amount), T1 :T2: T3=0~5:20~50:50~80 (otherly, the relationship of T1+T2+T3=100 is satisfied). As long as it is within the aforementioned range, The glass substrate 16 can be peeled off more easily. In other words, the ratio of the above T1:T2:T3 may also be referred to as the ratio of the T1 unit being 0 to 5 mol%, the ratio of the T2 unit being 20 to 50 mol%, and the ratio of the T3 unit being 50 to 80 mol%.

以可容易將玻璃基板16剝離,且可縮小玻璃積層體10之翹曲之觀點來說,硬化性有機聚矽氧X中(A-2)單元與(B-2)單元的比((A-2)/(B-2))宜為80/20~20/80,且以T1~T3單元之個數比例(莫耳量)計,宜為T1:T2:T3=0~5:20~50:50~80。 The ratio of the (A-2) unit to the (B-2) unit in the curable organopolysiloxane X from the viewpoint that the glass substrate 16 can be easily peeled off and the warpage of the glass laminate 10 can be reduced. -2)/(B-2)) should be 80/20~20/80, and the ratio of the number of T1~T3 units (mole amount) should be T1:T2:T3=0~5:20 ~50:50~80.

另外,使用硬化性有機聚矽氧X形成矽氧樹脂層時,依據硬化條件,會有T1~T3中之甲基或苯基脫離而形成Q單元的情形。 Further, when the epoxy resin layer is formed using the curable organopolyoxygen X, the methyl group or the phenyl group in T1 to T3 may be desorbed depending on the curing conditions to form a Q unit.

硬化性有機聚矽氧(特別是前述硬化性有機聚矽氧X)之數目平均分子量,以可製作對硬化性有機聚矽氧之溶解性優異且異物缺陷少的矽氧樹脂層14,或是,以可更容易將玻璃基板16剝離之觀點來說,其依據GPC(凝膠滲透層析法)測定所得之以聚苯乙烯換算的數目平均分子量宜為500~2000,較佳為600~2000,且800~1800更佳。 The number average molecular weight of the curable organopolyfluorene (especially the above-mentioned curable organopolyoxygen X) is such that the epoxy resin layer 14 which is excellent in solubility to the curable organic polyfluorene and has few foreign matter defects can be produced, or In view of the fact that the glass substrate 16 can be more easily peeled off, the number average molecular weight in terms of polystyrene measured by GPC (gel permeation chromatography) is preferably 500 to 2,000, preferably 600 to 2,000. And 800~1800 is better.

又,硬化性有機聚矽氧(特別是前述硬化性有機聚矽氧X)之質量平均分子量/數目平均分子量,以可製作對硬化性有機聚矽氧之溶解性優異且異物缺陷少的矽氧樹脂層14,或是,可更容易將玻璃基板16剝離之觀點來說,宜為1.00~2.00,較佳為1.00~1.70,且1.00~1.50更佳。 Further, the mass average molecular weight/number average molecular weight of the curable organopolyfluorene (particularly the curable organopolyoxygen X) is such that it is excellent in solubility to curable organopolyfluorene and has less foreign matter defects. The resin layer 14 or the viewpoint of more easily peeling off the glass substrate 16 is preferably 1.00 to 2.00, preferably 1.00 to 1.70, and more preferably 1.00 to 1.50.

硬化性有機聚矽氧(特別是前述硬化性有機聚矽氧X)之分子量的調節,可藉由控制反應條件來進行。例如,調 節製造硬化性寡聚物時之溶劑量,並提高水解性有機矽烷化合物之濃度的話即可獲得高分子量物,而若將濃度降低的話即可獲得低分子量物。 The adjustment of the molecular weight of the curable organopolyfluorene (especially the aforementioned curable organopolyoxygen X) can be carried out by controlling the reaction conditions. For example, tune When the amount of the solvent in the production of the curable oligomer is increased and the concentration of the hydrolyzable organodecane compound is increased, a high molecular weight substance can be obtained, and if the concentration is lowered, a low molecular weight substance can be obtained.

硬化性有機聚矽氧(特別是前述硬化性有機聚矽氧X)之形狀並無特別限制,亦可為粒狀。即,將硬化性有機聚矽氧(特別是前述硬化性有機聚矽氧X)加入於溶劑中時,亦可以微粒子狀態存在。 The shape of the curable organopolyfluorene (particularly the above-mentioned curable organopolyoxygen X) is not particularly limited, and may be in the form of particles. In other words, when the curable organic polyfluorene oxide (especially the curable organopolyoxygen X) is added to a solvent, it may be present in a fine particle state.

此時,藉由動態光散射法測出之硬化性有機聚矽氧(特別是前述硬化性有機聚矽氧X)之粒徑雖無特別限制,但以可製作異物缺陷少的該矽氧樹脂層,或是,可更容易將玻璃基板16剝離之觀點來說,宜為0.5~100nm,且0.5nm以上且小於40nm更佳。 In this case, the particle size of the curable organopolyfluorene (especially the curable organopolyoxygen X) measured by the dynamic light scattering method is not particularly limited, but the niobium resin having less foreign matter defects can be produced. The layer or the viewpoint that the glass substrate 16 can be more easily peeled off is preferably 0.5 to 100 nm, and more preferably 0.5 nm or more and less than 40 nm.

另外,前述動態光散射法之測定方法,係將硬化性有機聚矽氧(特別是前述硬化性有機聚矽氧X)於PEGMEA溶液(丙二醇-1-單甲基醚-2-乙酸酯)中調整成20質量%來製作試料,並使用濃稠系粒徑分析儀(OTSUKA ELECTRONICS Co.,LTD製,FPAR-1000)求出直方圖平均粒徑(D50)作為粒徑。 Further, the method for measuring the dynamic light scattering method is to use a curable organic polyfluorene oxide (particularly, the aforementioned curable organopolyoxygen X) in a PEGMEA solution (propylene glycol-1-monomethyl ether-2-acetate). The sample was prepared by adjusting it to 20% by mass, and a histogram average particle diameter (D50) was determined as a particle diameter using a thick particle size analyzer (manufactured by OTSUKA ELECTRONICS Co., Ltd., FPAR-1000).

前述矽氧樹脂層14之製造方法並無特別限制,可採用眾所周知之方法。作為矽氧樹脂層14之製造方法宜如後述,於支持基材12上形成會成為前述矽氧樹脂之硬化性有機聚矽氧層,並使該硬化性有機聚矽氧交聯硬化而製成矽氧樹脂層14。為了於支持基材12上形成硬化性有機聚矽氧層,宜使用已使硬化性有機聚矽氧溶解於溶劑中之溶液 (含硬化性有機聚矽氧之組成物),並將該溶液塗布於支持基材12上形成溶液層,接著去除溶劑而製成硬化性有機聚矽氧層。藉由調整溶液之濃度可控制硬化性有機聚矽氧層之厚度。而其中,從具有優異之處理性及矽氧樹脂層14之膜厚控制更容易之觀點來說,含硬化性有機聚矽氧之組成物中之硬化性有機聚矽氧之含量,相對於組成物總質量宜為1~100質量%,且1~50質量%更佳。 The method for producing the above-described silicone resin layer 14 is not particularly limited, and a well-known method can be employed. As a method for producing the epoxy resin layer 14, as described later, a curable organic polyfluorene oxide layer which becomes the above-described epoxy resin is formed on the support substrate 12, and the curable organic polyfluorene is cross-linked and hardened. The epoxy resin layer 14. In order to form a hardenable organopolyfluorene layer on the support substrate 12, it is preferred to use a solution in which the curable organopolysiloxane is dissolved in a solvent. (Constituent containing a curable organopolyoxygen), and the solution is applied onto a support substrate 12 to form a solution layer, followed by removal of the solvent to form a curable organopolysiloxane layer. The thickness of the hardenable organopolysiloxane layer can be controlled by adjusting the concentration of the solution. Among them, the content of the hardening organic polyfluorene in the composition containing the hardening organic polyfluorene is relative to the composition from the viewpoint of having superiority and controlling the film thickness of the epoxy resin layer 14 to be easier. The total mass of the material is preferably from 1 to 100% by mass, and more preferably from 1 to 50% by mass.

作為溶劑,只要是於作業環境下可容易將硬化性有機聚矽氧溶解,且為可容易揮發去除之溶劑,則並無特別限制。具體來說,可舉例如乙酸丁酯、2-庚酮、及1-甲氧基-2-丙醇乙酸酯等。 The solvent is not particularly limited as long as it can easily dissolve the curable organic polyfluorene in an operating environment and is a solvent which can be easily removed by volatilization. Specific examples thereof include butyl acetate, 2-heptanone, and 1-methoxy-2-propanol acetate.

又,以可更提高組成物中之硬化性有機聚矽氧之穩定性的觀點來說,宜控制組成物中的pH。一般而言,矽醇基可穩定存在之pH有某個範圍,已知在中性附近的話膠化可容易進行,而在酸性側(pH2~4)或鹼性側(pH11~14)的話則可更穩定地存在。以可更提高硬化性有機聚矽氧之穩定性,且可在硬化性有機聚矽氧硬化時作為硬化觸媒發揮作用的觀點而言,對於控制pH則適於使用酸。添加酸可列舉鹽酸、硫酸、硝酸、磷酸、亞硝酸、過氯酸、磺胺酸等之無機酸;及蟻酸、醋酸、丙酸、酪酸、草酸、琥珀酸、馬來酸、乳酸、對甲苯磺酸等之有機酸;且以醋酸為宜。酸之使用量,相對於硬化性有機聚矽氧組成物100質量份,宜為0.1~50質量份,且1~20質量份特別理想。 Further, from the viewpoint of further improving the stability of the curable organopolyfluorene in the composition, it is preferred to control the pH in the composition. In general, the pH at which the sterol group can be stably present has a certain range, and it is known that gelation can be easily performed in the vicinity of neutral, and on the acidic side (pH 2 to 4) or the alkaline side (pH 11 to 14). It can exist more stably. From the viewpoint of further improving the stability of the curable organic polyfluorene and acting as a curing catalyst in the curing of the curable organopolysiloxane, it is suitable to use an acid for controlling the pH. The acid to be added may be an inorganic acid such as hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, nitrous acid, perchloric acid or sulfamic acid; and formic acid, acetic acid, propionic acid, butyric acid, oxalic acid, succinic acid, maleic acid, lactic acid, p-toluene An organic acid such as an acid; and acetic acid is preferred. The amount of use of the acid is preferably from 0.1 to 50 parts by mass, and particularly preferably from 1 to 20 parts by mass, per 100 parts by mass of the curable organopolyfluorene composition.

並且,以可更提高組成物中之硬化性有機聚矽氧 之穩定性之觀點而言,亦可添加沸點較塗料溶劑更高的醇。所使用之醇的種類並無特別限制,可列舉1-丁醇、1-甲氧基-2-丙醇、2-戊醇、3-甲基-1-丁醇、1-戊醇、二丙酮醇、及2-(2-乙氧乙氧基)乙醇等。而該等之中,從硬化性有機聚矽氧之溶解性良好的觀點來看,則以1-甲氧基-2-丙醇、二丙酮醇、及2-(2-乙氧乙氧基)乙醇為佳。 Moreover, in order to further improve the hardening organic polyoxygen in the composition From the standpoint of stability, it is also possible to add an alcohol having a higher boiling point than the coating solvent. The type of the alcohol to be used is not particularly limited, and examples thereof include 1-butanol, 1-methoxy-2-propanol, 2-pentanol, 3-methyl-1-butanol, and 1-pentanol. Acetyl alcohol, 2-(2-ethoxyethoxy)ethanol, and the like. Among these, from the viewpoint of good solubility of the curable organopolyfluorene, 1-methoxy-2-propanol, diacetone alcohol, and 2-(2-ethoxyethoxy) are used. Ethanol is preferred.

又,於提升對基材之塗布性之目的下,亦可含有消泡劑及黏性調整劑;於提升對基材之密著性之目的下亦可更含有密著性賦予劑等之添加劑;而於使塗布性及所得之塗膜之平滑性提升之目的下則亦可摻混流平劑。該等添加劑之摻混量相對於硬化性有機聚矽氧100質量份,各成分宜各為0.01~2質量份的量。又,於無損本發明目的之範圍內亦可添加填料等。 In addition, an antifoaming agent and a viscosity adjusting agent may be contained for the purpose of improving the coating property to the substrate, and an additive such as an adhesion imparting agent may be further contained for the purpose of improving the adhesion to the substrate. The leveling agent may also be blended for the purpose of improving the applicability and the smoothness of the resulting coating film. The blending amount of the additives is preferably 0.01 to 2 parts by mass per 100 parts by mass of the curable organopolyfluorene. Further, a filler or the like may be added to the extent that the object of the present invention is not impaired.

另外,關於使用硬化性有機聚矽氧形成矽氧樹脂層之程序,於之後的段落會予以詳細敘述。 Further, the procedure for forming the epoxy resin layer using the curable organopolysiloxane will be described in detail later.

[玻璃積層體及其製造方法] [Glass laminate and its manufacturing method]

本發明之玻璃積層體10,如前述係一具有支持基材12、玻璃基板16及存在於其等之間之矽氧樹脂層14的積層體。 The glass laminate 10 of the present invention is a laminate having the support substrate 12, the glass substrate 16, and the epoxy resin layer 14 present between them, as described above.

本發明之玻璃積層體10之製造方法,雖然並無特別限制,但為了製得剝離強度(x)高於剝離強度(y)之積層體,以於支持基材12表面上形成矽氧樹脂層14之方法為宜。其中又以下述方法為宜:將硬化性有機聚矽氧塗布於支持基材12之表面,而於支持基材12表面上形成矽氧樹脂層14,接著,於矽氧樹脂層14之矽氧樹脂面上積層玻璃基板16而製 造玻璃積層體10。 The method for producing the glass laminate 10 of the present invention is not particularly limited. However, in order to obtain a laminate having a peel strength (x) higher than the peel strength (y), a silicone resin layer is formed on the surface of the support substrate 12. The method of 14 is suitable. Further, it is preferable to apply the curable organic polyfluorene oxide to the surface of the support substrate 12, and form the epoxy resin layer 14 on the surface of the support substrate 12, followed by the oxygenation on the surface of the silicone resin layer 14. The glass substrate 16 is laminated on the resin surface A glass laminate 10 is provided.

吾人推測一旦使硬化性有機聚矽氧於支持基材12表面硬化的話,因藉由於硬化反應時與支持基材12表面之相互作用而接著,從而矽氧樹脂與支持基材12表面之剝離強度會變高。因此,即便玻璃基板16與支持基材12為由相同材質構成者,仍亦可於與矽氧樹脂層14兩者間之剝離強度設定差異。 It is assumed that once the surface of the support substrate 12 is hardened by the curable organopolysiloxane, the peel strength of the surface of the support resin substrate 12 is followed by the interaction with the surface of the support substrate 12 during the hardening reaction. Will become higher. Therefore, even if the glass substrate 16 and the support base material 12 are made of the same material, the difference in peel strength between the glass substrate 16 and the silicone resin layer 14 can be set.

以下,將硬化性有機聚矽氧形成於支持基材12之表面,並於支持基材12表面上形成矽氧樹脂層14之步驟稱「樹脂層形成步驟」,且將於矽氧樹脂層14之矽氧樹脂面上積層玻璃基板16而製成玻璃積層體10之步驟稱「積層步驟」,並就各步驟之程序詳細敘述。 Hereinafter, the step of forming the curable organic polyfluorene oxide on the surface of the support substrate 12 and forming the epoxy resin layer 14 on the surface of the support substrate 12 is referred to as "resin layer formation step", and the epoxy resin layer 14 will be formed. The step of laminating the glass substrate 16 on the epoxy resin surface to form the glass laminate 10 is referred to as "layering step", and the procedure of each step will be described in detail.

(樹脂層形成步驟) (Resin layer forming step)

於樹脂層形成步驟,係將硬化性有機聚矽氧層形成於於支持基材12之表面,並於支持基材12表面上形成矽氧樹脂層14。 In the resin layer forming step, a curable organic polyfluorene oxide layer is formed on the surface of the support substrate 12, and a silicone resin layer 14 is formed on the surface of the support substrate 12.

為了於支持基材12上形成硬化性有機聚矽氧層,宜使用已使硬化性有機聚矽氧溶解於溶劑中之塗布用組成物(相當於前述含硬化性有機聚矽氧之組成物),並將該組成物塗布於支持基材12上形成溶液層,接著施予硬化處理而製成矽氧樹脂層14。 In order to form the curable organic polyfluorinated layer on the support substrate 12, it is preferable to use a coating composition (corresponding to the composition containing the curable organic polyfluorene) in which the curable organopolysiloxane is dissolved in a solvent. The composition is applied onto the support substrate 12 to form a solution layer, and then subjected to a hardening treatment to form the epoxy resin layer 14.

於支持基材12表面上塗布含硬化性有機聚矽氧之組成物的方法並無特限制,可使用眾所周知之方法。舉例來說可舉噴塗法、模塗法、旋塗法、浸沾式塗布法、輥 塗法、棒式塗布法、網印法、及凹版塗布法等。 The method of applying the composition containing the curable organopolyfluorene on the surface of the support substrate 12 is not particularly limited, and a well-known method can be used. For example, spraying, die coating, spin coating, dip coating, roller Coating method, stick coating method, screen printing method, gravure coating method, and the like.

其次,使支持基材12上之硬化性有機聚矽氧硬化而形成矽氧樹脂層14。更具體來說係如圖2(A)所示,於該步驟中係於支持基材12之至少一面的表面上形成有矽氧樹脂層14。 Next, the curable organic polysiloxane is cured on the support substrate 12 to form the epoxy resin layer 14. More specifically, as shown in FIG. 2(A), a silicone resin layer 14 is formed on the surface of at least one side of the support substrate 12 in this step.

雖然硬化之方法並無特別限制,但通常是藉由熱硬化處理來進行。 Although the method of hardening is not particularly limited, it is usually carried out by a heat hardening treatment.

使其熱硬化之溫度條件,於可提升矽氧樹脂層14之耐熱性並可使與玻璃基板16積層後之剝離強度(y)控制在如前述之範圍內則並無特別限制,但宜為150~550℃,且200~450℃更佳。又,加熱時間通常宜在10~300分鐘,且20~120分鐘更佳。另外,加熱條件亦可變更溫度條件來階段性地實施。 The temperature condition for thermally hardening is not particularly limited as long as the peeling strength (y) after laminating the glass substrate 16 can be controlled within a range as long as the heat resistance of the epoxy resin layer 14 can be improved, but it is preferably 150~550°C, and 200~450°C is better. Moreover, the heating time is usually preferably from 10 to 300 minutes, and more preferably from 20 to 120 minutes. Further, the heating conditions may be carried out stepwise by changing the temperature conditions.

藉由設為前述溫度範圍及加熱時間之範圍,可控制T1單元、T2單元及T3單元,且可進一步控制易因250℃以上之加熱而生成之Q單元的生成比率。 By setting the temperature range and the heating time range, the T1 unit, the T2 unit, and the T3 unit can be controlled, and the generation ratio of the Q unit which is easily generated by heating at 250 ° C or higher can be further controlled.

另外,於熱硬化處理,宜於進行過PRECURE(預硬化)後進行硬化(正式硬化)來使其硬化。藉由進行預硬化可製得具有優異耐熱性之矽氧樹脂層14。預硬化宜接續溶劑之去除進行,且此時,自層去除溶劑並形成交聯物之層之步驟與進行預硬化之步驟並無特別作區別。去除溶劑宜加熱至100℃以上進行,且藉由加熱至150℃以上可接續進行預硬化。去除溶劑與進行預硬化之溫度以及加熱時間宜為100~420℃且5~60分鐘,而150~300℃且10~30分鐘更佳。 若在420℃以下的話則可製得容易剝離之矽氧樹脂層。 Further, in the heat hardening treatment, it is preferable to perform hardening (formal hardening) after performing PRECURE (pre-hardening) to harden it. The epoxy resin layer 14 having excellent heat resistance can be obtained by performing pre-hardening. The pre-hardening is preferably carried out by removing the solvent, and at this time, the step of removing the solvent from the layer and forming the layer of the cross-linking is not particularly different from the step of performing the pre-hardening. The solvent removal is preferably carried out by heating to 100 ° C or higher, and pre-curing can be carried out by heating to 150 ° C or higher. The temperature for removing the solvent and pre-hardening and the heating time are preferably 100 to 420 ° C and 5 to 60 minutes, and 150 to 300 ° C and 10 to 30 minutes are more preferable. If it is 420 ° C or less, an epoxy resin layer which is easily peeled off can be obtained.

(積層步驟) (layering step)

積層步驟係於經前述樹脂層形成步驟所得之矽氧樹脂層14之矽氧樹脂面上積層玻璃基板16,而製得依序具備有支持基材12之層、矽氧樹脂層14及玻璃基板16之層的玻璃積層體10的步驟。更具體來說如圖2(B)所示,是以矽氧樹脂層14之與支持基材12側相反之側的表面14a、及具有第1主面16a及第2主面16b之玻璃基板16之第1主面16a作為積層面,來積層矽氧樹脂層14及玻璃基板16而製得玻璃積層體10。 The layering step is to laminate the glass substrate 16 on the surface of the epoxy resin layer of the epoxy resin layer 14 obtained by the resin layer forming step, thereby obtaining a layer having the support substrate 12, the epoxy resin layer 14 and the glass substrate. The step of the layered glass laminate 10 of 16. More specifically, as shown in FIG. 2(B), the surface 14a of the side of the silicone resin layer 14 opposite to the support substrate 12 side, and the glass substrate having the first main surface 16a and the second main surface 16b are shown. The first main surface 16a of the 16 is used as an accumulation layer to laminate the silicone resin layer 14 and the glass substrate 16 to obtain a glass laminate 10.

將玻璃基板層16積層於矽氧樹脂層14上之方法並無特別限制,可採用眾所周知之方法。 The method of laminating the glass substrate layer 16 on the epoxy resin layer 14 is not particularly limited, and a well-known method can be employed.

可舉例如於常壓環境下將玻璃基板16疊於矽氧樹脂層14之表面上的方法。另外,亦可依所需,於將玻璃基板16疊於矽氧樹脂層14之表面上後,使用輥或壓機使玻璃基板16壓接於矽氧樹脂層14上。藉由利用輥或壓機之壓接,因可容易去除混入於矽氧樹脂層14與玻璃基板層16之間的氣泡而理想。 For example, a method of laminating a glass substrate 16 on the surface of the epoxy resin layer 14 under a normal pressure environment can be mentioned. Alternatively, after the glass substrate 16 is laminated on the surface of the silicone resin layer 14, the glass substrate 16 may be pressure-bonded to the silicone resin layer 14 by using a roll or a press. It is preferable that the air bubbles mixed between the epoxy resin layer 14 and the glass substrate layer 16 can be easily removed by pressure bonding using a roll or a press.

藉由真空積層法或真空壓製法進行壓接的話,因可抑制氣泡之混入及確保良好之密著故更為理想。藉由在真空下進行壓接,則即便於殘存有微小氣泡的情況下,亦不會有因加熱而導致氣泡成長的情形,而有不易牽連到玻璃基板16變形缺陷之優點。 When the pressure bonding is carried out by a vacuum lamination method or a vacuum pressing method, it is more preferable because the mixing of bubbles can be suppressed and a good adhesion can be ensured. When the pressure is applied under vacuum, even if fine bubbles remain, there is no possibility that the bubbles grow due to heating, and there is an advantage that the glass substrate 16 is not easily deformed.

於積層玻璃基板16時,宜充分洗淨要與矽氧樹脂 層14接觸之玻璃基板16的表面,並且於潔淨度高的環境下進行積層。因潔淨度愈高,玻璃基板16之平坦度會變得愈良好而理想。 When laminating the glass substrate 16, it should be sufficiently washed with the epoxy resin. The layer 14 is in contact with the surface of the glass substrate 16, and is laminated in an environment of high cleanliness. The higher the degree of cleanliness, the better the flatness of the glass substrate 16 becomes.

另外,於積層玻璃基板16之後,亦可依所需,進行預退火處理(加熱處理)。藉由進行該預退火處理,經積層之玻璃基板16對於矽氧樹脂層14之密著性會提升,而可製成適當之剝離強度(y),從而於後述構件形成步驟時難發生電子裝製用構件之位置偏離等,使電子裝置之生產性提升。 Further, after the laminated glass substrate 16, the pre-annealing treatment (heat treatment) may be performed as needed. By performing the pre-annealing treatment, the adhesion of the laminated glass substrate 16 to the silicone resin layer 14 is improved, and an appropriate peel strength (y) can be obtained, so that it is difficult to occur in the member forming step described later. The positional deviation of the manufacturing member or the like improves the productivity of the electronic device.

預退火處理之條件雖然是按照所使用之矽氧樹脂層14之種類來適當選擇最佳條件,但從可將玻璃基板16與矽氧樹脂層14之間之剝離強度(y)製成更適宜者之觀點來看,宜於300℃以上(宜在300~400℃)進行5分鐘以上(宜在5~30分鐘)加熱處理。 Although the conditions for the pre-annealing treatment are appropriately selected depending on the type of the epoxy resin layer 14 to be used, the peel strength (y) between the glass substrate 16 and the silicone resin layer 14 can be made more suitable. From the point of view of the person, it is preferable to carry out heat treatment for more than 5 minutes (preferably 5 to 30 minutes) at 300 ° C or higher (preferably at 300 to 400 ° C).

另外,要形成對於玻璃基板16之第1主面與對於支持基材12之第1主面之剝離強度已設有差異的矽氧樹脂層14,並不侷限於前述方法。 Further, the formation of the silicone resin layer 14 having a difference in peel strength between the first main surface of the glass substrate 16 and the first main surface of the support substrate 12 is not limited to the above method.

譬如,於使用對於矽氧樹脂層14表面之密著性高於玻璃基板16之材質的支持基材12的情況時,可將前述硬化性有機聚矽氧於某剝離性表面上進行硬化而製造矽氧樹脂之薄膜,並於使該薄膜介於玻璃基板16與支持基材12之間的同時進行積層。 For example, when the support substrate 12 having a higher adhesion to the surface of the silicone resin layer 14 than the material of the glass substrate 16 is used, the curable organic polyfluorene can be cured on a peelable surface to produce A film of a silicone resin is laminated while the film is interposed between the glass substrate 16 and the support substrate 12.

又,藉由硬化性有機聚矽氧之硬化使接著性對玻璃基板16充分地低且其接著性對支持基材12充分地高時,可於 玻璃基板16與支持基材12之間使交聯物硬化而形成矽氧樹脂層14。 Moreover, when the adhesion is sufficiently low to the glass substrate 16 by the curing of the curable organopolysiloxane, and the adhesion is sufficiently high for the support substrate 12, The crosslinked material is hardened between the glass substrate 16 and the support substrate 12 to form the epoxy resin layer 14.

並且,即便於支持基材12為由與玻璃基板16相同之玻璃材料構成的情況下,亦可施行提高支持基材12表面之接著性之處理以提高對於矽氧樹脂層14之剝離強度。例如,可舉如下之方法為例:如矽烷耦合劑般化學性地使固定力提升之化學性方法(底漆處理);如FLAME(火焰)處理般使表面活性基增加之物理性方法;及如噴砂處理般藉由使表面粗度增加以使牽曳增加之機械性處理方法等。 Further, even when the support base material 12 is made of the same glass material as the glass substrate 16, the treatment for improving the adhesion of the surface of the support substrate 12 can be performed to improve the peel strength against the silicone resin layer 14. For example, the following method can be exemplified: a chemical method (primer treatment) which chemically raises the fixing force like a decane coupling agent; a physical method of increasing a surface active group as in the case of FLAME (flame) treatment; A mechanical treatment method or the like which increases the thickness by increasing the surface roughness as in the case of sand blasting.

(玻璃基層體) (glass base layer)

本發明第1態樣的玻璃基層體10可用於各種用途上,可舉例如製造後述顯示裝置用面板、PV、薄膜二次電池及表面形成有電路之半導體晶圓等之電子零件之用途等。另外,於該用途來說,玻璃基層體10多被曝露於高溫條件(例如450℃以上)下(例如1小時以上)。 The glass substrate 10 according to the first aspect of the present invention can be used for various applications, and examples thereof include the use of an electronic component such as a panel for a display device to be described later, a PV, a thin film secondary battery, and a semiconductor wafer having a circuit formed thereon. Further, in this application, the glass base layer 10 is often exposed to high temperature conditions (for example, 450 ° C or higher) (for example, 1 hour or longer).

於此處,「顯示裝置用面板」包含LCD、OLED、電子紙、電漿顯示器、場發射顯示器、量子點LED顯示器、及MEMS(Micro Electro Mechanical Systems(微機電系統))快門顯示器(SHUTTER PANEL)等。 Here, the "display panel panel" includes an LCD, an OLED, an electronic paper, a plasma display, a field emission display, a quantum dot LED display, and a MEMS (Micro Electro Mechanical Systems) shutter display (SHUTTER PANEL). Wait.

<第2實施態樣> <Second embodiment>

圖3係有關本發明玻璃積層體之第2實施態樣的示意截面圖。 Fig. 3 is a schematic cross-sectional view showing a second embodiment of the glass laminate of the present invention.

如圖3所示,玻璃基層體100係一具有支持基材12之層、玻璃基板16之層及存在於其等之間之矽氧樹脂層14的積層 體。 As shown in FIG. 3, the glass substrate 100 is a layer having a layer supporting the substrate 12, a layer of the glass substrate 16, and a layer of the epoxy resin layer 14 present between the layers. body.

於圖3所示之玻璃基層體100,係與前述圖1所示之玻璃基層體10不同,其矽氧樹脂層14是被固定於玻璃基板16上,且附樹脂層之玻璃基板20是以使附樹脂層之玻璃基板20中之矽氧樹脂層14可與支持基材12直接相接之方式可剝離地積層(密著)於支持基材12上。該固定與可剝離之密著於剝離強度(即,剝離所需之應力)上係有差異的,固定係意味著相對於密著其剝離強度較高。即,以玻璃基層體100來說,矽氧樹脂層14與玻璃基板16之界面剝離強度係高於矽氧樹脂層14與支持基材12之界面剝離強度。 The glass substrate 100 shown in FIG. 3 is different from the glass substrate 10 shown in FIG. 1 in that the epoxy resin layer 14 is fixed on the glass substrate 16, and the glass substrate 20 with the resin layer is The epoxy resin layer 14 in the glass substrate 20 with the resin layer can be peelably laminated (adhered) to the support substrate 12 so as to be in direct contact with the support substrate 12. The fixing is different from the peelable adhesion to the peeling strength (that is, the stress required for peeling), and the fixing means that the peeling strength is high with respect to the adhesion. That is, in the glass base layer 100, the interfacial peel strength between the silicone resin layer 14 and the glass substrate 16 is higher than the interfacial peel strength of the silicone resin layer 14 and the support substrate 12.

更具體而言,玻璃基板16與矽氧樹脂層14之界面具有剝離強度(z),而一旦對玻璃基板16與矽氧樹脂層14之界面施加超過剝離強度(z)剝開方向之應力的話,玻璃基板16與第1矽氧樹脂層14之界面即會剝離。矽氧樹脂層14與支持基材12之界面具有剝離強度(w),而一旦對矽氧樹脂層14與支持基材12之界面施加超過剝離強度(w)剝開方向之應力的話,矽氧樹脂層14與支持基材12之界面即會剝離。 More specifically, the interface between the glass substrate 16 and the silicone resin layer 14 has a peeling strength (z), and once the interface between the glass substrate 16 and the silicone resin layer 14 is subjected to a stress exceeding the peeling strength (z) peeling direction, The interface between the glass substrate 16 and the first epoxy resin layer 14 is peeled off. The interface between the silicone resin layer 14 and the support substrate 12 has a peel strength (w), and when a stress exceeding the peel strength (w) peeling direction is applied to the interface between the silicone resin layer 14 and the support substrate 12, the oxygen is removed. The interface between the resin layer 14 and the support substrate 12 is peeled off.

於玻璃積層體100中,前述剝離強度(z)係高於前述剝離強度(w)。因此,對玻璃積層體100施加剝開支持基材12與玻璃基板16之方向的應力的話,本發明玻璃積層體100會於矽氧樹脂層14與支持基材12之界面剝離,而分離成附樹脂層之玻璃基板20與支持基材12。 In the glass laminate 100, the peel strength (z) is higher than the peel strength (w). Therefore, when the glass laminate 100 is subjected to the stress in the direction in which the support substrate 12 and the glass substrate 16 are peeled off, the glass laminate 100 of the present invention is peeled off at the interface between the silicone resin layer 14 and the support substrate 12, and is separated into attached. The glass substrate 20 of the resin layer and the support substrate 12.

剝離強度(z)相較於剝離強度(w)宜夠高。而提高剝離強度(z)意指提高矽氧樹脂層14對於玻璃基板16之附著 力,且於加熱處理後對於支持基材12更可維持相對高之附著力。 The peel strength (z) is preferably sufficiently high compared to the peel strength (w). Increasing the peel strength (z) means increasing the adhesion of the silicone resin layer 14 to the glass substrate 16. The force, and after the heat treatment, maintains a relatively high adhesion to the support substrate 12.

為了提高矽氧樹脂層14對於玻璃基板16之附著力,宜使前述硬化性有機聚矽氧於玻璃基板16上交聯硬化而形成矽氧樹脂層14。藉由交聯硬化時之接著力,可形成經以高結合力對玻璃基板16結合之矽氧樹脂層14。 In order to increase the adhesion of the silicone resin layer 14 to the glass substrate 16, the curable organic polyfluorene oxide is preferably cross-linked and hardened on the glass substrate 16 to form the epoxy resin layer 14. The epoxy resin layer 14 bonded to the glass substrate 16 with high bonding force can be formed by the adhesion force at the time of crosslinking hardening.

另一方面,交聯硬化後之矽氧樹脂對於支持基材12之結合力會低於前述交聯硬化時產生之結合力為通例。因此,藉由於玻璃基板16上形成矽氧樹脂層14,之後於矽氧樹脂層14的面上積層支持基材12,可製造玻璃積層體100。 On the other hand, the bonding strength of the cross-linking hardened epoxy resin to the support substrate 12 is lower than that of the above-mentioned cross-linking hardening. Therefore, the glass laminate 100 can be produced by forming the epoxy resin layer 14 on the glass substrate 16 and then laminating the support substrate 12 on the surface of the epoxy resin layer 14.

構成玻璃積層體100之各層(支持基材12、玻璃基板16及矽氧樹脂層14)與構成前述玻璃積層體10之各層為同義,故在此將說明省略。 The respective layers (the support substrate 12, the glass substrate 16, and the epoxy resin layer 14) constituting the glass laminate 100 are synonymous with the layers constituting the glass laminate 10, and thus will not be described here.

惟,矽氧樹脂層14之支持基材12側表面之表面粗度Ra雖無特別限制,但由玻璃基板16之積層性及剝離性更優異之觀點來看,宜為0.1~20nm,且0.1~10nm更佳。 However, the surface roughness Ra of the side surface of the supporting substrate 12 of the silicone resin layer 14 is not particularly limited, but is preferably 0.1 to 20 nm from the viewpoint of further excellent lamination property and releasability of the glass substrate 16. ~10nm is better.

另外,作為表面粗度Ra之測定方法是按照JIS B 0601-2001來進行,將在任意5處以上的點測出之Ra經算術平均數所得的值即為前述表面粗度Ra。 In addition, the method of measuring the surface roughness Ra is performed in accordance with JIS B 0601-2001, and the value obtained by arithmetic mean of Ra measured at any five or more points is the surface roughness Ra.

玻璃積層體100之製造方法雖然並無特別限制,然而可於前述玻璃積層體10之製造方法中,使用玻璃基板16取代支持基材12,且使用支持基材12取代玻璃基板16,藉此製造所欲之玻璃積層體100。更具體來說,可於玻璃基板16上形成矽氧樹脂層14,接著於矽氧樹脂層14上積層支 持基材12,而製造玻璃積層體100。 The method for producing the glass laminate 100 is not particularly limited. However, in the method for producing the glass laminate 10, the glass substrate 16 may be used instead of the support substrate 12, and the support substrate 12 may be used instead of the glass substrate 16 to manufacture the glass substrate 16. The desired glass laminate 100. More specifically, the epoxy resin layer 14 can be formed on the glass substrate 16, followed by laminating the layer on the silicone resin layer 14. The glass laminate 100 is produced by holding the substrate 12.

[附構件之玻璃基板及其製造方法] [Glass substrate with attached member and method of manufacturing the same]

於本發明中,可使用前述玻璃積層體(玻璃積層體10或玻璃積層體100)來製造電子裝置。 In the present invention, the above-described glass laminate (glass laminate 10 or glass laminate 100) can be used to manufacture an electronic device.

以下,就使用前述玻璃積層體10之態樣進行詳細敘述。 Hereinafter, the aspect of the glass laminate 10 will be described in detail.

藉由使用玻璃積層體10,可製造含有玻璃基板與電子裝置用構件之附構件之玻璃基板(附電子裝置用構件之玻璃基板)。 By using the glass laminate 10, a glass substrate (a glass substrate with a member for an electronic device) including a member for a glass substrate and a member for an electronic device can be manufactured.

該附構件之玻璃基板之製造方法雖然並無特別限制,然而從電子裝置之生產性優異之觀點來看,則以下述方法為宜:於前述玻璃積體中之玻璃基板上形成電子裝置用構件而製造附電子裝置用構件之積層體,並自所得之附電子裝置用構件之積層體,以矽氧樹脂層之玻璃基板側界面或樹脂層內部為剝離面,分離成附構件之玻璃基板及附樹脂層之支持基材。另外,按照需要,接著將附構件之玻璃基板之剝離面予以潔淨化更佳。 The method for producing the glass substrate of the member is not particularly limited. However, from the viewpoint of excellent productivity of the electronic device, it is preferable to form a member for an electronic device on the glass substrate in the glass composite. And the laminated body of the member for electronic devices is manufactured, and the laminated body of the member for electronic devices obtained is separated into the glass substrate of the attached member by using the glass substrate side interface of the oxime resin layer or the inside of the resin layer as a peeling surface. A support substrate with a resin layer. Further, it is more preferable to clean the peeled surface of the glass substrate of the attached member as needed.

以下,將於前述玻璃積體中之玻璃基板上形成電子裝置用構件以製造附電子裝置用構件之積層體的步驟稱「構件形成步驟」;係自附電子裝置用構件之積層體,以矽氧樹脂層之玻璃基板側界面為剝離面,分離成附構件之玻璃基板及附樹脂層之支持基材的步驟稱「分離步驟」;將附構件之玻璃基板之剝離面予以潔淨化的步驟稱「潔淨化處理步驟」。另外,如前述,潔淨化處理步驟係可按照需要來實施 之任擇步驟。 In the following, a step of forming a laminate for a member for an electronic device on a glass substrate in the glass laminate to produce a laminate for a member for an electronic device is referred to as a "member forming step", and a laminate of a member for an electronic device is used as a laminate. The glass substrate side interface of the oxygen resin layer is a peeling surface, and the step of separating the glass substrate of the attached member and the supporting substrate with the resin layer is referred to as a "separation step"; the step of cleaning the peeling surface of the glass substrate of the attached member is called "Kilution process steps". In addition, as described above, the cleaning process step can be implemented as needed Optional steps.

以下,就各步驟中所使用之材料及程序進行詳細敘述。 Hereinafter, the materials and procedures used in the respective steps will be described in detail.

(構件形成步驟) (component forming step)

構件形成步驟係於前述積層步驟中所得之玻璃積體10中之玻璃基板16上形成電子裝置用構件之步驟。更具體而言,係如圖2(C)所示,於玻璃基板16之第2主面16b(露出表面)上形成電子裝置用構件22,而製得附電子裝置用構件之積層體24。 The member forming step is a step of forming a member for an electronic device on the glass substrate 16 in the glass composite 10 obtained in the above-described lamination step. More specifically, as shown in FIG. 2(C), the electronic device member 22 is formed on the second main surface 16b (exposed surface) of the glass substrate 16, and the laminated body 24 for the electronic device is produced.

首先,將就本步驟中所使用之電子裝置用構件22做詳細敘述,其後再就步驟之程序進行詳細敘述。 First, the electronic device member 22 used in this step will be described in detail, and then the procedure of the steps will be described in detail.

(電子裝置用構件(機能性元件)) (Mechanical components (functional components))

電子裝置用構件22係用以構成已形成於玻璃積層體10中之玻璃基板16上之電子裝置之至少一部分的構件。更具體來說,電子裝置用構件22可舉用於顯示裝置用面板、太陽電池、薄膜二次電池,或是表面形成有電路之半導體晶圓等之電子零件等之構件(例如顯示裝置用構件、太陽電池用構件、薄膜二次電池用構件及電子零件用電路)。 The electronic device member 22 is a member for constituting at least a part of the electronic device formed on the glass substrate 16 in the glass laminate 10. More specifically, the electronic device member 22 can be used as a member for a display device panel, a solar cell, a thin film secondary battery, or an electronic component such as a semiconductor wafer on which a circuit is formed (for example, a member for a display device) , a member for a solar cell, a member for a thin film secondary battery, and a circuit for an electronic component).

舉例而言,作為太陽電池用構件以矽電池型來說,可舉正極之氧化錫等透明電極、p層/i層/n層所示之矽層、及負極之金屬等,此外,尚可舉對應於化合物型、染料敏化型及量子點型等之各種構件等。 For example, as a member for a solar cell, a tantalum battery type may be a transparent electrode such as tin oxide of a positive electrode, a tantalum layer of a p layer/i layer/n layer, a metal of a negative electrode, or the like. Various members such as a compound type, a dye-sensitized type, and a quantum dot type are used.

又,作為薄膜二次電池用構件以鋰離子型來說,可舉正極及負極之金屬或金屬氧化物等之透明電極、電解質層 之鋰化合物、集電層之金屬、及作為密封層之樹脂等,其他則可舉對應於鎳氫型、聚合物型及陶瓷電解質型等之各種構件等。 In addition, as a member for a thin film secondary battery, a lithium ion type may be a transparent electrode or an electrolyte layer such as a metal or a metal oxide of a positive electrode or a negative electrode. The lithium compound, the metal of the collector layer, and the resin as the sealing layer may be various members such as a nickel-hydrogen type, a polymer type, and a ceramic electrolyte type.

又,作為電子零件用電路以CCD及CMOS來說,可舉導電部之金屬、絕緣部之氧化矽或氮化矽等,其他則可舉對應於壓力感測器.加速度感測器等各種感測器或剛性印刷電路板、可撓性印刷電路板、及剛撓性印刷電路板等之各種構件等。 Further, as the circuit for the electronic component, the CCD and the CMOS include a metal of a conductive portion, a ruthenium oxide or a tantalum nitride of an insulating portion, and the like, and may correspond to a pressure sensor. Various sensors such as an acceleration sensor or various components such as a rigid printed circuit board, a flexible printed circuit board, and a rigid flexible printed circuit board.

(步驟之程序) (procedure of steps)

前述附電子裝置用構件之積層體24之製造方法並無特別限制,可按照電子裝置用構件之構成構件之種類依以往眾所周知之方法,於玻璃積層體10之玻璃基板16之第2主面16b表面上形成電子裝置用構件22。 The method of manufacturing the laminated body 24 of the electronic device-attached member is not particularly limited, and may be applied to the second main surface 16b of the glass substrate 16 of the glass laminate 10 according to a conventionally known method depending on the type of the constituent member of the electronic device member. A member 22 for an electronic device is formed on the surface.

另外,電子裝置用構件22並非最後形成於玻璃基板16之第2主面16b之構件之全部(以下稱「全構件」),亦可為全構件之一部分(以下稱「部分構件」)。亦可將已自矽氧樹脂層14剝離之附部分構件之玻璃基板,於其後之步驟中製成附全部構件之玻璃基板(相當於後述電子裝置)。 Further, the electronic device member 22 is not the entire member (hereinafter referred to as "all members") formed on the second main surface 16b of the glass substrate 16, and may be one part of the entire member (hereinafter referred to as "partial member"). The glass substrate with the part of the member which has been peeled off from the epoxy resin layer 14 may be formed into a glass substrate (corresponding to an electronic device described later) in which all the members are attached.

又,於已自矽氧樹脂層14剝離之附全部構件之玻璃基板上亦可於其剝離面(第1主面16a)上形成其他電子裝置用構件。又,亦可組合附全部構件之積層體,之後自附全部構件之積層體將支持基材12剝離,而製造電子裝置。並且,亦可使用並組合2片附全部構件之積層體,之後自附全部構件之積層體將2片支持基材12剝離,而製造具有2片玻璃基 板之附構件之玻璃基板。 Further, other electronic device members may be formed on the peeling surface (first main surface 16a) of the glass substrate having all the members which have been peeled off from the silicone resin layer 14. Further, the laminate of all the members may be combined, and then the laminate of all the members may be peeled off from the support substrate 12 to manufacture an electronic device. Further, it is also possible to use and combine two laminated bodies with all the members, and then peel the two supporting substrates 12 from the laminated body of all the members, and to manufacture two glass substrates. A glass substrate attached to the board.

舉例而言,採製造OLED的情況為例,為了於玻璃積層體10中玻璃基板16之與矽氧樹脂層14側相反之側的表面上(相當於玻璃基板16之第2主面16b)形成有機EL構造體,會進行下述各種層之形成及處理:形成透明電極;進一步於形成有透明電極之面上蒸鍍電洞注入層、電洞傳輸層、發光層及電子傳輸層等;形成背面電極;及使用密封板進行密封等。該等層形成及處理,具體而言可舉例如成膜處理、蒸鍍處理及密封板之接著處理等。 For example, a case where the OLED is manufactured is formed on the surface of the glass laminate 10 on the side opposite to the side of the epoxy resin layer 14 (corresponding to the second main surface 16b of the glass substrate 16). The organic EL structure is formed and processed by forming a transparent electrode, and further depositing a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and the like on a surface on which the transparent electrode is formed; The back electrode; and sealing using a sealing plate. The layer formation and treatment are specifically, for example, a film formation treatment, a vapor deposition treatment, and a subsequent treatment of a sealing plate.

又,例如製造TFT-LCD時,則具有如下步驟等之各種步驟:TFT形成步驟,於玻璃積層體10之玻璃基板16之第2主面16b上,使用光阻液,於利用CVD法及濺鍍法等一般之成膜方法所形成之金屬膜及金屬氧化膜等上形成圖案而形成薄膜電晶體(TFT);CF形成步驟,於另一玻璃積層體10之玻璃基板16之第2主面16b上,將光阻液用於圖案形成而形成濾色片(CF);及貼合步驟,將於TFT形成步驟所得之附TFT之積層體與於CF形成步驟所得之附CF之積層體予以積層。 Further, for example, when manufacturing a TFT-LCD, there are various steps such as a step of forming a TFT on the second main surface 16b of the glass substrate 16 of the glass laminate 10 by using a photoresist solution and using a CVD method and sputtering. A metal film, a metal oxide film or the like formed by a general film forming method such as plating is patterned to form a thin film transistor (TFT), and a CF forming step is performed on the second main surface of the glass substrate 16 of the other glass laminate 10. 16b, a photoresist solution is used for pattern formation to form a color filter (CF); and a bonding step is performed on the laminate of the TFT obtained by the TFT forming step and the CF-attached layer obtained by the CF forming step. Laminated.

於TFT形成步驟及CF形成步驟中,係使用眾所周知之微影術及蝕刻技術等,於玻璃基板16之第2主面16b上形成TFT及CF。此時,圖案形成用之塗布液是使用光阻液。 In the TFT formation step and the CF formation step, TFTs and CFs are formed on the second main surface 16b of the glass substrate 16 by using well-known lithography and etching techniques. At this time, the coating liquid for pattern formation uses a photoresist liquid.

另外,於形成TFT及CF前,亦可視需要清洗玻璃基板16之第2主面16b。洗淨之方法可使用眾所周知之乾洗或濕洗。 Further, before forming the TFT and the CF, the second main surface 16b of the glass substrate 16 may be cleaned as needed. The method of washing can be carried out using a well-known dry cleaning or wet washing.

於貼合步驟係使附TFT之積層體的薄膜電晶體形成面與附CF之積層體的濾色片形成面相對向,並使用黏著劑(例如單元形成用紫外線硬化型黏著劑)貼合。之後,於由附TFT之積層體與附CF之積層體形成之單元內注入液晶材。注入液晶材之方法則有例如減壓注入法及滴下注入法。 In the bonding step, the thin film transistor forming surface of the laminated body with the TFT is opposed to the color filter forming surface of the laminated body with CF, and is bonded by using an adhesive (for example, an ultraviolet curing adhesive for cell formation). Thereafter, a liquid crystal material is injected into a cell formed of a laminate body with TFTs and a laminate body with CF. The method of injecting the liquid crystal material is, for example, a vacuum injection method and a dropping injection method.

(分離步驟) (separation step)

分離步驟係自前述構件形成步驟所得之附電子裝置用構件之積層體24,以矽氧樹脂層14與玻璃基板16之界面為剝離面,分離成積層有電子裝置用構件22之玻璃基板16(附構件之玻璃基板)、以及矽氧樹脂層14與支持基材12,而獲得含有電子裝置用構件22及玻璃基板16之附構件之玻璃基板26的步驟。 The separation step is a laminate body 24 of the member for an electronic device obtained by the member forming step, and the interface between the silicone resin layer 14 and the glass substrate 16 is a peeling surface, and is separated into a glass substrate 16 in which the electronic device member 22 is laminated ( The glass substrate of the member, the epoxy resin layer 14 and the support substrate 12 are obtained, and the glass substrate 26 containing the member for the electronic device 22 and the member of the glass substrate 16 is obtained.

而當剝離時玻璃基板16上之電子裝置用構件22為必要形成之全部構成構件之一部分的情況時,則亦可於分離後將剩餘之構成構件形成於玻璃基板16上。 On the other hand, when the electronic device member 22 on the glass substrate 16 is part of all the constituent members to be formed when peeling, the remaining constituent members may be formed on the glass substrate 16 after separation.

剝離附構件之玻璃基板26與附樹脂層之支持基材18之方法並無特別限定。具體來說,譬如可將銳利之刀狀物插入玻璃基板16與矽氧樹脂層14之界面,賦予剝離開端後,吹附水與壓縮空氣之混合流體來進行剝離。且宜為下述方式:以使附電子裝置用構件之積層體24之支持基材12為上側且電子裝置用構件22為下側之方式設置於定盤上,並將電子裝置用構件22側真空吸附於定盤上(於兩面已積層有支持基材時則依序進行),並且於該狀態下先使刀具進 入玻璃基板16-矽氧樹脂層14界面中。然後,於其後以多數真空吸附墊吸附支持基材12側,自已插入有刀具處附近依序使真空吸附墊上升。如此一來會於矽氧樹脂層14與玻璃基板16之界面形成空氣層,且該空氣層會擴散於界面整面,而可容易將附樹脂層之支持基材18剝離。 The method of peeling off the glass substrate 26 of the attachment member and the support substrate 18 with the resin layer is not particularly limited. Specifically, for example, a sharp blade can be inserted into the interface between the glass substrate 16 and the silicone resin layer 14, and after the peeling start is applied, a mixed fluid of water and compressed air is blown and peeled off. In addition, it is preferable that the support substrate 12 of the laminated body 24 of the member for electronic device is placed on the upper side and the electronic device member 22 is on the lower side, and the electronic device member 22 side is provided. The vacuum is adsorbed on the fixed plate (sequentially when the supporting substrate is laminated on both sides), and in this state, the tool is first introduced. The glass substrate 16 is placed in the interface of the silicone resin layer 14. Then, the support substrate 12 side is adsorbed by a plurality of vacuum adsorption pads thereafter, and the vacuum adsorption pad is sequentially raised in the vicinity of the inserted tool. As a result, an air layer is formed at the interface between the epoxy resin layer 14 and the glass substrate 16, and the air layer diffuses over the entire surface of the interface, and the support substrate 18 with the resin layer can be easily peeled off.

又,附樹脂層之支持基材18可與新的玻璃基板積層而製造本發明之玻璃基層體10。 Further, the support substrate 18 with the resin layer can be laminated with a new glass substrate to produce the glass base layer 10 of the present invention.

另外,於自附電子裝置用構件之積層體24將附構件之玻璃基板26予以分離時,藉由電離劑之吹附或濕度控制,可更控制矽氧樹脂層14之碎片靜電吸附於附構件之玻璃基板26。 Further, when the laminated body 24 of the member for electronic device is separated from the glass substrate 26 of the attached member, the electrode of the epoxy resin layer 14 can be more electrostatically adsorbed to the attached member by the blowing of the ionizing agent or the humidity control. The glass substrate 26 is.

[潔淨化處理步驟] [cleaning process steps]

潔淨化處理步驟係對前述分離步驟所得之附構件之玻璃基板26中之玻璃基板16之剝離面(第1主面16a)施行潔淨化處理之步驟。藉由實施該步驟,可除去附著於剝離面之矽氧樹脂、或附著於矽氧樹脂層及剝離面之前述構件形成步驟中所產生之金屬片及塵埃等雜質,而可維持剝離面之潔淨度。而結果,被黏貼於玻璃基板16之剝離面之相位差薄膜或偏光薄膜等之黏著性會提升。 The cleaning treatment step is a step of performing a cleaning treatment on the peeling surface (first main surface 16a) of the glass substrate 16 in the glass substrate 26 of the member obtained by the separation step. By performing this step, it is possible to remove impurities such as metal sheets and dust generated in the above-described member forming step of the epoxy resin adhered to the peeling surface or adhered to the epoxy resin layer and the peeling surface, thereby maintaining the cleansing of the peeling surface. degree. As a result, the adhesion of the retardation film or the polarizing film adhered to the peeling surface of the glass substrate 16 is improved.

潔淨化處理方法只要可除去附著於剝離面之樹脂及灰塵等,則其方法並無特別限制。可舉例如熱分解附著物之方法、藉由照射電漿或照射光(例如UV照射處理)來除去剝離面上之雜質之方法及使用溶劑進行潔淨處理之方法等。 The method of the cleaning treatment is not particularly limited as long as the resin, dust, and the like adhering to the peeling surface can be removed. For example, a method of thermally decomposing a deposit, a method of removing impurities on a peeling surface by irradiation with plasma or irradiation light (for example, a UV irradiation treatment), a method of performing a clean treatment using a solvent, and the like may be mentioned.

前述附構件之玻璃基板26之製造方法係適於如行動電話及PDA般使用於行動終端之小型顯示裝置之製造。且顯示裝置主要是LCD或OLED,而作為LCD包含TN型、STN型、FE型、TFT型、MIM型、IPS型、及VA型等。基本上無論為被動驅動型及主動驅動型中任一種顯示裝置均可適用。 The manufacturing method of the glass substrate 26 of the above-mentioned attached member is suitable for the manufacture of a small display device for use in a mobile terminal like a mobile phone and a PDA. Further, the display device is mainly an LCD or an OLED, and the LCD includes a TN type, an STN type, an FE type, a TFT type, an MIM type, an IPS type, and a VA type. Basically, any of the passive driving type and the active driving type can be applied.

經以前述方法製成之附構件之玻璃基板26,可列舉具有玻璃基板與顯示裝置用構件之顯示裝置用面板、具有玻璃基板與太陽電池用構件之太陽電池、具有玻璃基板與薄膜二次電池用構件之薄膜二次電池、及具有玻璃板與電子裝置用構件之電子零件等。而顯示裝置用面板則包含液晶面板、有機EL面板、電漿顯示器面板及場發射面板等。 The glass substrate 26 of the member which is produced by the above-mentioned method is a panel for a display device which has a glass substrate and the member for display devices, the solar cell which has the member of the glass substrate and solar cell, and the glass substrate and the thin film secondary battery. A thin film secondary battery using a member, an electronic component having a glass plate and a member for an electronic device, and the like. The panel for a display device includes a liquid crystal panel, an organic EL panel, a plasma display panel, and a field emission panel.

於前述係就使用玻璃積層體10之態樣進行了詳細敘述,然亦可使用玻璃積層體100並依循與前述相同程序製造電子裝置。 Although the above description has been made in detail using the glass laminate 10, the glass laminate 100 can be used and the electronic device can be manufactured in accordance with the same procedure as described above.

另外,使用玻璃積層體100時,於前述分離步驟之際,是以支持基材12與矽氧樹脂層14之界面為剝離面,分離成支持基材12,與矽氧樹脂層14、玻璃基板16及含電子裝置用構件22之電子裝置。 Further, when the glass laminate 100 is used, in the separation step, the interface between the support substrate 12 and the epoxy resin layer 14 is a release surface, and is separated into a support substrate 12, a silicone resin layer 14, and a glass substrate. 16 and an electronic device including the member 22 for an electronic device.

實施例 Example

以下,將藉由實施例等更具體說明本發明,惟本發明並不侷限於該等例子。又,於本製造例中,硬化性有機聚矽氧之評價係依據以下所示之項目及方法來進行。 Hereinafter, the present invention will be more specifically described by way of examples, but the invention is not limited to the examples. Further, in the present production example, the evaluation of the curable organopolyoxygen was carried out in accordance with the items and methods shown below.

(1)硬化性有機聚矽氧中之矽原子鍵結狀態之解析(T單元之 比率) (1) Analysis of the bonding state of the ruthenium atom in the sclerosing organic polyfluorene (T unit ratio)

使用核磁共振分析裝置(溶液29Si-NMR:JEOL RESONANCE股份有限公司製,ECP400)求出T1~T3的比。 The ratio of T1 to T3 was determined using a nuclear magnetic resonance analyzer (solution 29 Si-NMR: manufactured by JEOL RESONANCE Co., Ltd., ECP400).

T1~T3的比係分別自溶液29Si-NMR之峰面積比求出。測定條件設定為:脈寬20μsec、脈波迴復之等待時間30sec、累積次數256scan。溶劑係使用甲苯,且於調製成濃度30wt%者中添加了鬆弛試劑、即0.1wt%之Cr(acac)3。化學位移之基準係將源自TMS之尖峰訂為0ppm。 The ratio of T1 to T3 was determined from the peak area ratio of solution 29 Si-NMR. The measurement conditions were set to a pulse width of 20 μsec, a waiting time for pulse wave recovery of 30 sec, and a cumulative number of times of 256 scan. Toluene was used as the solvent, and a relaxation reagent, that is, 0.1 wt% of Cr(acac) 3 was added to a concentration of 30% by weight. The basis for the chemical shift is to set the peak from TMS to 0 ppm.

各構造之積分算出範圍如下:T1(Me基):-44~-49ppm、T1(Ph基):-60~-61ppm The integral calculation range of each structure is as follows: T1 (Me base): -44 to -49 ppm, T1 (Ph base): -60 to -61 ppm

T2(Me基):-50~-60ppm、T2(Ph基):-67~-74ppm T2 (Me base): -50~-60ppm, T2 (Ph base): -67~-74ppm

T3(Me基):-61~-67ppm、T3(Ph基):-74~-83ppm T3 (Me base): -61~-67ppm, T3 (Ph base): -74~-83ppm

(2)硬化性有機聚矽氧中之苯基莫耳%/甲基莫耳%(前述(A-2)/(B-2))組成比之解析 (2) Analysis of the composition ratio of phenyl mole %/methyl mole % (the aforementioned (A-2) / (B-2)) in the curable organopolyoxygen

使用核磁共振分析裝置(溶液1H-NMR:JEOL RESONANCE股份有限公司製,ECP400)求出苯基莫耳%/甲基莫耳%(前述(A-2)/(B-2))組成比。 The composition ratio of phenyl mole % / methyl mole % (the above (A-2) / (B-2)) was determined using a nuclear magnetic resonance analyzer (solution 1 H-NMR: manufactured by JEOL RESONANCE Co., Ltd., ECP400). .

苯基莫耳%/甲基莫耳%(前述(A-2)/(B-2))組成比係分別自1H-NMR之峰面積求出。測定條件設定為:脈寬6.7μsec、脈波迴復之等待時間5sec、累積次數16scan。溶劑係使用氘代氯仿,調製成濃度1wt%。化學位移之基準係將來自氯仿之尖峰訂為7.26ppm。又,源自各構造之1H-NMR的化學位移如下:A-2(Ph基):8.2~6.4ppm The phenyl mole % / methyl mole % (the above (A-2) / (B-2)) composition ratio was determined from the peak area of 1 H-NMR. The measurement conditions were set to a pulse width of 6.7 μsec, a waiting time for pulse wave recovery of 5 sec, and a cumulative number of 16 scans. The solvent was prepared by deuterated chloroform to a concentration of 1% by weight. The basis for the chemical shift is to set the peak from chloroform to 7.26 ppm. Further, the chemical shifts from 1 H-NMR of each structure are as follows: A-2 (Ph group): 8.2 to 6.4 ppm

B-2(Me基):0.6~-0.7ppm。 B-2 (Me base): 0.6 to -0.7 ppm.

(3)數目平均分子量Mn、質量平均分子量Mw、及分散度Mw/Mn之評價 (3) Evaluation of number average molecular weight Mn, mass average molecular weight Mw, and dispersity Mw/Mn

藉由凝膠滲透層析術(GPC,Tosoh Corporation製之HLC8220、RI檢出、管柱:TSK-GEL SuperHZ、溶析液:四氫呋喃)求出。 It was determined by gel permeation chromatography (GPC, HLC8220 manufactured by Tosoh Corporation, RI detection, column: TSK-GEL SuperHZ, eluent: tetrahydrofuran).

(4)利用動態光散射法之粒徑的評價 (4) Evaluation of particle size by dynamic light scattering method

將硬化性有機聚矽氧製成20質量%之PGMEA(丙二醇-1-單甲基醚-2-乙酸酯)溶液,並使用濃稠系粒徑分析儀(OTSUKA ELECTRONICS Co.,LTD製,FPAR-1000)求出直方圖平均粒徑(D50)作為粒徑。 The curable organic polyfluorene was made into a 20% by mass solution of PGMEA (propylene glycol-1-monomethyl ether-2-acetate), and a thick particle size analyzer (OTSUKA ELECTRONICS Co., Ltd., FPAR-1000) The histogram average particle diameter (D50) was determined as the particle diameter.

於以下之實施例1~10及比較例1、2中,係使用由無鹼硼矽酸鹽玻璃構成之玻璃板(縱274mm,橫274mm,板厚0.2mm,線膨脹係數38×10-7/℃,旭硝子股份有限公司製商品名稱「AN100」)作為玻璃基板。又,支持板則使用同為由無鹼硼矽酸鹽玻璃構成之玻璃板(縱274mm,橫274mm,板厚0.4mm,線膨脹係數38×10-7/℃,旭硝子股份有限公司製,商品名稱「AN100」)。 In the following Examples 1 to 10 and Comparative Examples 1 and 2, a glass plate composed of alkali-free borosilicate glass (274 mm in length, 274 mm in width, 0.2 mm in plate thickness, and linear expansion coefficient 38 × 10 -7 was used. /°C, the product name "AN100" manufactured by Asahi Glass Co., Ltd.) is used as a glass substrate. In addition, the support plate uses a glass plate which is composed of alkali-free borosilicate glass (transformation 274 mm, transverse 274 mm, plate thickness 0.4 mm, linear expansion coefficient 38×10 -7 /°C, manufactured by Asahi Glass Co., Ltd., The name "AN100").

<製造例1:硬化性有機聚矽氧之製造> <Production Example 1: Production of Curable Organic Polyoxane>

將碳酸鈉(12.7g,0.12莫耳)及水(80mL)放入具備有回流冷凝管、滴下漏斗及攪拌機之反應容器中並進行攪拌,之後更加入甲基異丁基酮(80mL)而製得反應溶液。其次,自滴下漏斗滴下甲基三氯矽烷(7.5g,0.05莫耳)及苯基三氯矽烷(10.6g,0.05莫耳)至反應溶液中歷時30分鐘。此時,係 使反應溶液之溫度上升至40℃為止。接著,於滴下結束後,將反應容器浸漬於60℃之油浴中,且加熱並攪拌24小時。反應結束後,將有機相洗淨至洗淨水成為中性為止,接著使用乾燥劑乾燥有機相。接下來,於將乾燥劑去除之後,以減壓抽去溶劑,並進行一夜真空乾燥,而獲得白色的固體(硬化性有機聚矽氧(U1))。 Sodium carbonate (12.7 g, 0.12 mol) and water (80 mL) were placed in a reaction vessel equipped with a reflux condenser, a dropping funnel, and a stirrer, and stirred, and then methyl isobutyl ketone (80 mL) was added thereto. The reaction solution was obtained. Next, methyltrichloromethane (7.5 g, 0.05 mol) and phenyltrichlorodecane (10.6 g, 0.05 mol) were dropped from the dropping funnel into the reaction solution for 30 minutes. At this time, The temperature of the reaction solution was raised to 40 °C. Next, after the completion of the dropwise addition, the reaction vessel was immersed in an oil bath of 60 ° C, and heated and stirred for 24 hours. After completion of the reaction, the organic phase is washed until the washing water becomes neutral, and then the organic phase is dried using a drying agent. Next, after removing the desiccant, the solvent was distilled off under reduced pressure, and vacuum drying was performed overnight to obtain a white solid (curable organic polyfluorene (U1)).

<製造例2~8> <Manufacturing Example 2 to 8>

針對硬化性有機聚矽氧(U2)~(U8),以與製造例1同樣方式,依表1所示之組成比進行製造。另外,關於(U4)係除了將反應時間自24小時調整成1小時以外,而關於(U6)係除了將反應時間自24小時調整成3小時以外,則係以與製造例1同樣之程序進行製造。並且(U5)係製造了(U4)後,將其製成50質量%之甲醇溶液,且於添加了相對於固形份為2質量%之醋酸之後,再度以減壓抽去溶劑,而獲得之白色固體。 The curable organic polysiloxanes (U2) to (U8) were produced in the same manner as in Production Example 1 according to the composition ratio shown in Table 1. In addition, (U4) except that the reaction time was adjusted from 24 hours to 1 hour, and (U6) was carried out in the same procedure as in Production Example 1 except that the reaction time was adjusted from 24 hours to 3 hours. Manufacturing. (U5), after (U4) was produced, it was made into a 50 mass % methanol solution, and after adding the acetic acid of 2 mass % with respect to a solid content, it was obtained by extracting the solvent under reduced pressure again. White solid.

另外,以下之表1中「苯基莫耳%/甲基莫耳%」欄,係表示於所得之硬化性有機聚矽氧中,T1~T3中R為苯基之有基矽氧基單元與T1~T3中R為甲基之有基矽氧基單元的莫耳比。 In addition, the column "Phenyl mole % / methyl mole %" in Table 1 below is shown in the obtained curable organopolyfluorene oxide, and R is a phenyl group-containing oxy group unit in T1 to T3. And the molar ratio of the decyloxy unit in which R is a methyl group in T1 to T3.

又,於「T單元之比率」欄,係表示所得之硬化性有機聚矽氧中T1~T3各單元之個數的比率(莫耳%),且以使T1~T3各單元之個數之比率的合計成為100之方式表示。 In the column of "T unit ratio", the ratio of the number of units of T1 to T3 in the obtained curable organopolyfluorinated oxygen (% by mole) is shown, and the number of each unit of T1 to T3 is made. The total of the ratios is expressed as 100.

「粒徑」欄,係藉由前述動態光散射法測出之硬化性有機聚矽氧之粒徑,且「<40」意指粒徑小於40nm,「>100」則意指粒徑超過100nm。 The "particle size" column is the particle size of the sclerosing organic polyfluorene oxide measured by the above dynamic light scattering method, and "<40" means that the particle diameter is less than 40 nm, and ">100" means that the particle diameter exceeds 100 nm. .

另外,前述各單元之含量係藉由29Si-NMR或1H-NMR算出。 Further, the content of each of the above units was calculated by 29 Si-NMR or 1 H-NMR.

<實施例1> <Example 1>

使所得之硬化性有機聚矽氧(U1)溶解於PEGMEA而製作出含硬化性有機聚矽氧(U1)之液狀物(固形份濃度:40質量%)(另外,硬化性有機聚矽氧是以表1所示之粒徑的微粒子存在於液狀物中)。 The obtained curable organopolyfluorene (U1) was dissolved in PEGMEA to prepare a liquid material containing a curable organopolyfluorene (U1) (solid content concentration: 40% by mass) (in addition, curable organic polyoxyl The fine particles having the particle diameters shown in Table 1 were present in the liquid).

將支持基材進行純水洗浄後,再進行UV洗淨予以潔淨化。 The support substrate is washed with pure water, and then washed with UV to be cleaned.

其次,使用旋轉式塗布機於支持基材之第1主面上以縱278mm及橫278mm之大小,塗布含硬化性有機聚矽氧(U1)之液狀物(塗布量30g/m2)。 Next, a liquid material containing a curable organic polyfluorene oxide (U1) (coating amount: 30 g/m 2 ) was applied to the first main surface of the support substrate by a spin coater at a length of 278 mm and a width of 278 mm.

接著,將之以350℃於大氣中加熱硬化30分鐘,而於支持基材之第1主面形成厚度2.8μm之矽氧樹脂層,而獲得支持體A(附樹脂層之支持基材)。 Then, it was heat-hardened at 350 ° C for 30 minutes in the atmosphere, and a tantalum resin layer having a thickness of 2.8 μm was formed on the first main surface of the supporting substrate to obtain a support A (supporting substrate with a resin layer).

繼而,使支持體A之矽氧樹脂層之剝離性表面及與該矽 氧樹脂層同尺寸且厚度0.2mm之玻璃基板(「AN100」。旭硝子股份有限公司製)的第1主面相對向,並且於室溫且大氣壓下使用積層裝置以使兩基板之重心重疊之方式將兩基板疊合而獲得玻璃積層體S1。 Then, the peeling surface of the epoxy resin layer of the support A and the crucible The first main surface of the glass substrate ("AN100", manufactured by Asahi Glass Co., Ltd.) having the same size and a thickness of 0.2 mm is opposed to each other, and a stacking device is used at room temperature and atmospheric pressure to overlap the center of gravity of the two substrates. The two substrates are laminated to obtain a glass laminate S1.

另外,所得之玻璃積層體S1相當於前述圖1之玻璃積層體10,且於玻璃積層體S1中,支持基材之層與矽氧樹脂層之界面剝離強度(x)高於矽氧樹脂層與玻璃基板之界面剝離強度(y)。 Further, the obtained glass laminate S1 corresponds to the glass laminate 10 of Fig. 1 described above, and in the glass laminate S1, the interfacial peel strength (x) of the layer of the support substrate and the epoxy resin layer is higher than that of the epoxy resin layer. Interfacial peel strength (y) from the glass substrate.

接著,使用所得之玻璃積層體S1實施以下測定。且以下之評價結果將彙整顯示於後述之表1。 Next, the following measurement was carried out using the obtained glass laminate S1. The results of the following evaluations are shown in Table 1 below.

[剝離性評價] [Peeability evaluation]

自玻璃積層體S1切出50mm正方之試樣,並將該試樣載置於已加熱至450℃(氮氣體環境下)之熱風烘箱內,於放置60分鐘後取出。接著,使玻璃積層體S1中玻璃基板之第2主面真空吸附於定盤上後,將厚度0.1mm之不鏽鋼製刀具插入玻璃積層體S1之一角隅部的玻璃基板與矽氧樹脂層之界面,賦予前述玻璃基板之第1主面與前述矽氧樹脂層之剝離性表面之間剝離開端。然後,於已以90mm間距且多數真空吸附墊吸附玻璃積層體S1之支持基材之第2主面後,依序使自靠近前述角隅部之吸附墊上升,藉此將玻璃基板之第1主面與矽氧樹脂層之剝離性表面剝離。 A 50 mm square sample was cut out from the glass laminate S1, and the sample was placed in a hot air oven heated to 450 ° C (under a nitrogen atmosphere), and taken out after leaving for 60 minutes. Next, after the second main surface of the glass substrate in the glass laminate S1 is vacuum-adsorbed on the fixed plate, a stainless steel cutter having a thickness of 0.1 mm is inserted into the interface between the glass substrate and the silicone resin layer at one corner of the glass laminate S1. And a peeling opening is provided between the first main surface of the glass substrate and the peelable surface of the silicone resin layer. Then, after adsorbing the second main surface of the support substrate of the glass laminate S1 at a pitch of 90 mm and a plurality of vacuum adsorption pads, the adsorption pads from the corner portions are sequentially raised to thereby increase the first of the glass substrates. The main surface is peeled off from the peeling surface of the silicone resin layer.

依據前述結果,可確認即便高溫加熱處理後玻璃基板亦可剝離。 From the above results, it was confirmed that the glass substrate could be peeled off even after the high-temperature heat treatment.

另外,矽氧樹脂層之主要部分會與支持基材一同自玻 璃基板分離,依據該結果可確認支持基材之層與矽氧樹脂層之界面剝離強度(x)係高於矽氧樹脂層與玻璃基板之界面剝離強度(y)。 In addition, the main part of the silicone resin layer will be self-glassed together with the support substrate. The glass substrate was separated, and based on the results, it was confirmed that the interfacial peel strength (x) of the layer of the support substrate and the epoxy resin layer was higher than the interfacial peel strength (y) between the silicone resin layer and the glass substrate.

[耐熱性評價] [Heat resistance evaluation]

自玻璃積層體S1切出50mm正方之試樣,並將該試樣載置於已加熱至450℃(氮氣體環境下)之熱風烘箱內,於放置60分鐘後,將其取出並評價試樣內是否確認有到起泡或著色。 A 50 mm square specimen was cut out from the glass laminate S1, and the sample was placed in a hot air oven heated to 450 ° C (under a nitrogen atmosphere), and after being left for 60 minutes, it was taken out and the sample was evaluated. Whether it is confirmed to be foaming or coloring.

<實施例2~10> <Examples 2 to 10>

除了分別各使用下述表2所示之含硬化性有機聚矽氧(U2)~(U6)之液狀物來取代含硬化性有機聚矽氧(U1)之液狀物,並變更熱硬化處理條件以外,係遵循與實施例1同樣之程序,製造出玻璃積層體S2~S10。 The liquid material containing the curable organopolyfluorene (U1) was replaced with a liquid material containing a curable organic polyfluorene (U2) to (U6) as shown in Table 2 below, and the thermosetting was changed. The glass laminates S2 to S10 were produced in the same manner as in Example 1 except for the treatment conditions.

於下述表2中顯示於製造液狀物時所使用之溶劑之種類及固形份濃度等。又,關於實施例7及8,係將加熱硬化時之熱硬化處理條件自「350℃且30分鐘」變更成「以150℃於大氣中加熱硬化30分鐘,其後再以350℃於大氣中加熱硬化60分鐘」。並且,關於實施例9,是將加熱硬化時之熱硬化處理條件自「350℃且30分鐘」變更成「以150℃於大氣中加熱硬化30分鐘,其後再以350℃於大氣中加熱硬化60分鐘,並再進一步以500℃於大氣中加熱硬化60分鐘」。 The types of the solvent used in the production of the liquid material, the solid content concentration, and the like are shown in Table 2 below. Further, in Examples 7 and 8, the heat curing treatment conditions at the time of heat curing were changed from "350 ° C and 30 minutes" to "heat curing at 150 ° C for 30 minutes in the atmosphere, and then at 350 ° C in the atmosphere. Heat hardened for 60 minutes". Further, in the ninth embodiment, the thermosetting treatment conditions at the time of heat curing were changed from "350 ° C and 30 minutes" to "heat curing at 150 ° C for 30 minutes in the atmosphere, and then heat-hardening at 350 ° C in the atmosphere. After 60 minutes, and further heat-hardened in the atmosphere at 500 ° C for 60 minutes.

另外,所得之玻璃積層體S2~S10相當於前述圖1之玻璃積層體10,且於玻璃積層體S2~S10中,支持基材之層與矽氧樹脂層之界面剝離強度(x)係高於矽氧樹脂層與玻璃基板 之界面剝離強度(y)。 Further, the obtained glass laminates S2 to S10 correspond to the glass laminate 10 of Fig. 1 described above, and in the glass laminates S2 to S10, the interface peeling strength (x) between the layer of the support substrate and the silicone resin layer is high. On the epoxy resin layer and the glass substrate Interface peel strength (y).

又,使用所得之玻璃積層體S2~S10,實施前述[剝離性評價]及[耐熱性評價]。並將結果彙整顯示於表2。 Moreover, the above-mentioned [peelability evaluation] and [heat resistance evaluation] were carried out using the obtained glass laminates S2 to S10. The results are shown in Table 2.

<比較例1> <Comparative Example 1>

除了使用下述表2所示之含硬化性有機聚矽氧(U8)之液狀物來取代含硬化性有機聚矽氧(U1)之液狀物以外,係遵循與實施例1同樣之程序,進行玻璃積層體C1之製造。且使用所得之玻璃積層體C1,實施前述[剝離性評價]及[耐熱性評價]。並將結果彙整顯示於表2。 The same procedure as in Example 1 was followed except that the liquid material containing the curable organopolyfluorene (U1) was replaced with the liquid material containing the curable organopolyfluorene (U8) shown in Table 2 below. The manufacture of the glass laminate C1 is carried out. The above-mentioned [peelability evaluation] and [heat resistance evaluation] were carried out using the obtained glass laminate C1. The results are shown in Table 2.

<比較例2> <Comparative Example 2>

除了使用無溶劑附加反應型剝離紙用聚矽氧(Shin-Etsu Chemical Co.,Ltd.製,商品名稱:KNS-320A)100質量份與白金系觸媒(Shin-Etsu Chemical Co.,Ltd.製,商品名稱:CAT-PL-56)2質量份之混合物(U9)取代含硬化性有機聚矽氧(U1)之液狀物以外,係遵循與實施例1同樣之程序,製造出玻璃積層體C2。使用所得之玻璃積層體C2,實施前述[剝離性評價]及[耐熱性評價]。並將結果彙整顯示於表2。 100 parts by mass of polyfluorene (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KNS-320A) and platinum-based catalyst (Shin-Etsu Chemical Co., Ltd.) were used except for the solvent-free additional reaction type release paper. Manufactured, product name: CAT-PL-56) 2 parts by mass of the mixture (U9) was replaced with the liquid material containing the curable organopolyfluorene (U1), and the same procedure as in Example 1 was followed to produce a glass laminate. Body C2. The above-mentioned [peelability evaluation] and [heat resistance evaluation] were carried out using the obtained glass laminate C2. The results are shown in Table 2.

另外,前述玻璃積層體C2之態樣係相當於專利文獻1所載之態樣。 Further, the aspect of the glass laminate C2 corresponds to the aspect of Patent Document 1.

表2中,「塗布性評價」欄係將塗布含硬化性有機聚矽氧之液狀物後可形成矽氧樹脂層時當作「○」,而無法形成矽氧樹脂層時當作「×」。 In Table 2, the "Applicability Evaluation" column is treated as "○" when a liquid material containing a curable organic polyfluorene is applied, and when the epoxy resin layer is formed, "X" is not formed when the epoxy resin layer cannot be formed. "."

又,於「剝離性評價」欄中,將於玻璃基板與矽氧樹 脂層之界面插入不鏽鋼製刀具,而於賦予了剝離開端的時候玻璃基板與矽氧樹脂層之大部分會剝離而可容易將玻璃基板剝離的情況以「◎」來表示;將僅有剝離開端的話玻璃基板不會剝離,但仍可將玻璃基板剝離的情況以「○」來表示;將無法剝離玻璃基板,或是,玻璃基板破損的情況以「×」來表示。 Also, in the "peelability evaluation" column, the glass substrate and the enamel tree will be A stainless steel cutter is inserted into the interface of the grease layer, and when the peeling opening is applied, most of the glass substrate and the silicone resin layer are peeled off, and the glass substrate can be easily peeled off by "◎"; only the peeling start is provided. In the case where the glass substrate is not peeled off, the glass substrate may be peeled off by "○"; the glass substrate may not be peeled off, or the glass substrate may be broken by "x".

並且,於「耐熱性評價」欄中,無「著色」及「起泡」的情況時以「無」表示,有該等情況時則以「有」表示。 In addition, in the "heat resistance evaluation" column, "no" is indicated when there is no "coloring" and "bubble", and "yes" is indicated when there is such a case.

又,表2中,於「矽氧樹脂層」欄中,係顯示由依據29Si-NMR之峰面積比所算出之T3單元及Q單元之莫耳%。 Further, in Table 2, in the column of "oxygenated resin layer", the molar percentage of the T3 unit and the Q unit calculated from the peak area ratio of 29 Si-NMR was shown.

另外,於本製造例及比較例中係將矽氧樹脂層之解析依以下所示之項目及方法進行。 Further, in the present production examples and comparative examples, the analysis of the silicone resin layer was carried out in accordance with the items and methods shown below.

(1)矽氧樹脂層之矽原子之鍵結狀態之解析 (1) Analysis of bonding state of germanium atoms in the epoxy resin layer

使用核磁共振分析裝置(固體29Si-NMR:JEOL RESONANCE股份有限公司製,ECP600)求出T3單元及Q單元之含量(莫耳%)。 The content (% by mole) of the T3 unit and the Q unit was determined using a nuclear magnetic resonance analyzer (solid 29 Si-NMR: manufactured by JEOL RESONANCE Co., Ltd., ECP600).

T3單元及Q單元之含量(莫耳%)係分別自固體29Si-NMR之峰面積比求出。矽氧樹脂層係使用如下之固體試樣:以旋轉式塗布機於玻璃基材上塗布各實施例及比較例中所使用之含硬化性有機聚矽氧之液狀物,並以各實施例及比較例之加熱條件進行加熱硬化,於玻璃基材上形成矽氧樹脂層後,將該矽氧樹脂層以剃刀刀片削取而得者。測定法採用DDMAS法,測定條件係設定為:脈寬1.9μsec、脈波迴復之等待時間300sec、累積次數300scan以上、MAS 旋轉速度10KHz。化學位移之基準係將源自聚二甲矽氧之尖峰訂為-22ppm。又,源自各構造之固體29Si-NMR之化學位移如下:T3:-48~-88ppm The content (% by mole) of the T3 unit and the Q unit was determined from the peak area ratio of the solid 29 Si-NMR. As the epoxy resin layer, a solid sample containing the curable organopolyxylene-containing liquid used in each of the examples and the comparative examples was applied onto a glass substrate by a spin coater, and each of the examples was used. The heating conditions of the comparative examples were heat-hardened to form a silicone resin layer on the glass substrate, and the epoxy resin layer was obtained by cutting with a razor blade. The measurement method was performed by the DDMAS method, and the measurement conditions were set to be 1.9 μsec in pulse width, 300 sec in pulse wave recovery, 300 scan or more in cumulative number, and 10 KHz in MAS rotation speed. The basis for the chemical shift is to set the peak derived from polydimethyl oxime to -22 ppm. Further, the chemical shift of the solid 29 Si-NMR derived from each structure was as follows: T3: -48 to -88 ppm

Q:-96~-116ppm。 Q: -96~-116ppm.

(2)矽氧樹脂層之(A-1)/(B-1)比之解析 (2) Analysis of (A-1)/(B-1) ratio of the epoxy resin layer

使用核磁共振分析裝置(固體1H-NMR:JEOL RESONANCE股份有限公司製,ECP600),自源自Ph基及Me基之峰面積比求出。矽氧樹脂層係使用如下之固體試樣:以旋轉式塗布機於玻璃基材上塗布各實施例及比較例中所使用之含硬化性有機聚矽氧之液狀物,並以各實施例及比較例之加熱條件進行加熱硬化,於玻璃基材上形成矽氧樹脂層後,將該矽氧樹脂層以剃刀刀片削取而得者。測定法係使用Depth2,測定條件係設定為:脈寬2.3μsec、脈波迴復之等待時間15sec、累積次數16scan、MAS旋轉速度22KHz。化學位移之基準係將源自金剛烷之尖峰訂為1.7ppm。又,源自各構造之固體1H-NMR之化學位移如下:A-1(Ph基):18~4ppm Using a nuclear magnetic resonance analyzer (solid 1 H-NMR: manufactured by JEOL RESONANCE Co., Ltd., ECP600), the peak area ratio derived from the Ph group and the Me group was determined. As the epoxy resin layer, a solid sample containing the curable organopolyxylene-containing liquid used in each of the examples and the comparative examples was applied onto a glass substrate by a spin coater, and each of the examples was used. The heating conditions of the comparative examples were heat-hardened to form a silicone resin layer on the glass substrate, and the epoxy resin layer was obtained by cutting with a razor blade. In the measurement method, Depth2 was used, and the measurement conditions were set to be 2.3 μsec in pulse width, 15 sec in pulse wave recovery, 16 scan in cumulative number, and 22 KHz in MAS rotation speed. The basis for the chemical shift is to set the peak derived from adamantane to 1.7 ppm. Further, the chemical shift of the solid 1 H-NMR derived from each structure is as follows: A-1 (Ph group): 18 to 4 ppm

B-1(Me基):4~-10ppm。 B-1 (Me base): 4 to -10 ppm.

(3)矽氧樹脂層之膜厚 (3) Film thickness of the epoxy resin layer

矽氧樹脂層之膜厚係使用接觸式膜壓裝置之表面粗度.輪廓形狀測定機(東京精密股份有限公司製SURFCOM 1400G-12)進行測定。 The film thickness of the epoxy resin layer is the surface roughness of the contact membrane pressure device. The contour shape measuring machine (SURFCOM 1400G-12 manufactured by Tokyo Seimitsu Co., Ltd.) was measured.

(4)矽氧樹脂層之收縮應力 (4) Shrinkage stress of the epoxy resin layer

以外徑4吋且厚度為525±25μm之矽晶片的定向平面為基準,於收納於薄膜應力測定裝置FLX-2320(KLA Tencor Corporation製)內之預定位置之後,於周圍溫度25℃下,計測出矽晶片之曲率半徑。 After being placed in a predetermined position in the film stress measuring device FLX-2320 (manufactured by KLA Tencor Corporation), the measurement was performed at an ambient temperature of 25 ° C, based on the orientation of the wafer having an outer diameter of 4 吋 and a thickness of 525 ± 25 μm. The radius of curvature of the wafer.

接著,取出矽晶片,使用旋塗法於矽晶片上塗布各實施例及比較例中所使用之含硬化性有機聚矽氧之液狀物,並以各實施例及比較例之加熱條件進行加熱硬化而形成矽氧樹脂層。以與要形成矽氧系被膜前相同之方式,於周圍溫度25℃下,計測出已形成有矽氧樹脂層之矽晶片之曲率半徑。 Next, the ruthenium wafer was taken out, and the curable organic polyfluorene-containing liquid material used in each of the examples and the comparative examples was applied onto the ruthenium wafer by spin coating, and heated under the heating conditions of the respective examples and comparative examples. It is hardened to form a layer of a silicone resin. The radius of curvature of the tantalum wafer on which the tantalum oxide layer had been formed was measured in the same manner as before the formation of the tantalum-based coating film at an ambient temperature of 25 °C.

從(式中,E/(1-ν)為矽晶片之雙軸向彈性係數(結晶面(100):1.805×1011Pa),h為矽晶片之厚度[m],t為矽氧樹脂層之厚度[m],R為形成矽氧樹脂層前之矽晶片之曲率半徑與形成矽氧樹脂層後之曲率半徑的差[m])算出矽氧樹脂層於25℃下之收縮應力。 From (where E/(1-ν) is the biaxial elastic coefficient of the tantalum wafer (crystal face (100): 1.805×10 11 Pa), h is the thickness of the tantalum wafer [m], t is the epoxy resin The thickness [m] of the layer, R is the difference [v] between the radius of curvature of the tantalum wafer before the formation of the tantalum resin layer and the radius of curvature of the tantalum oxide layer, and the shrinkage stress of the tantalum resin layer at 25 ° C was calculated.

另外,玻璃複合體S1~S9中之矽氧樹脂層之有機矽氧基單元係由Q單元與T3單元所構成。而於前述實施例10及比較例1中,未檢出Q單元(為測定界限以下)。 Further, the organic methoxy unit of the oxime resin layer in the glass composites S1 to S9 is composed of a Q unit and a T3 unit. In the above-described Example 10 and Comparative Example 1, the Q unit was not detected (below the measurement limit).

如前述表2所示,於本發明之玻璃積層體中,矽氧樹脂層不僅顯示優異之耐熱性,於玻璃基板之剝離性(分離性)亦優異。特別是,於含Q單元之實施例1~9中,剝離性更優異。 As shown in the above-mentioned Table 2, in the glass laminate of the present invention, the epoxy resin layer exhibits excellent heat resistance and is excellent in peelability (separability) on a glass substrate. In particular, in Examples 1 to 9 containing Q units, the releasability was more excellent.

另一方面,如比較例1、2所示,未使用預定組成比之矽氧樹脂層時,則未獲得所期望之效果。 On the other hand, as shown in Comparative Examples 1 and 2, when the silicone resin layer having a predetermined composition ratio was not used, the desired effect was not obtained.

<實施例11> <Example 11>

於本例中,係使用於實施例1中所得之玻璃積層體S1來製造OLED。 In this example, the OLED was produced using the glass laminate S1 obtained in Example 1.

首先,於玻璃積層體S1中之玻璃基板之第2主面上,藉由電漿CVD法依序成膜氮化矽、氧化矽及非晶矽。其次,藉由離子摻雜裝置將低濃度的硼注入非晶矽層,並做加熱處理且進行去氫處理。接著,藉由雷射退火裝置進行非晶矽層之結晶化處理。繼而,藉由使用光刻法所行之蝕刻及離子摻雜裝置,將低濃度的磷注入非晶矽層,而形成N型及P型之TFT區。接著,於玻璃基板之第2主面側,藉由電漿CVD法成膜氧化矽膜而形成閘絕緣膜後,藉由濺鍍法將鉬成膜,並藉由使用光刻法所行之蝕刻形成閘電極。繼而,藉由光刻法及離子摻雜裝置,將高濃度的硼與磷注入N型、P型個別所欲之區域,而形成源極區及汲極區。接下來,於玻璃基板之第2主面側,利用電漿CVD法所行之氧化矽的成膜形成層間絕緣膜,並利用濺鍍法成膜鋁及使用光刻法所行之蝕刻形成TFT電極。其次,於氫氣體環境下,做加熱處理並進行過氫化處理之後,以利用電漿CVD法所行之氮化 矽的成膜形成保護層。繼而,於玻璃基板之第2主面側塗布紫外線硬化性樹脂,並藉由光刻法形成平坦化層及接觸孔。接著,以濺鍍法將銦錫氧化物成膜,並藉由使用光刻法之蝕刻形成畫素電極。 First, tantalum nitride, hafnium oxide, and amorphous germanium are sequentially formed by the plasma CVD method on the second main surface of the glass substrate in the glass laminate S1. Next, a low concentration of boron is implanted into the amorphous germanium layer by an ion doping apparatus, and heat treatment is performed and dehydrogenation treatment is performed. Next, the crystallization treatment of the amorphous germanium layer is performed by a laser annealing apparatus. Then, by using an etching and ion doping apparatus which is performed by photolithography, a low concentration of phosphorus is implanted into the amorphous germanium layer to form N-type and P-type TFT regions. Next, on the second main surface side of the glass substrate, a ruthenium oxide film is formed by a plasma CVD method to form a gate insulating film, and then molybdenum is formed by sputtering, and photolithography is used. Etching forms a gate electrode. Then, by using a photolithography method and an ion doping apparatus, a high concentration of boron and phosphorus is implanted into an N-type and a P-type desired region to form a source region and a drain region. Next, an interlayer insulating film is formed on the second main surface side of the glass substrate by a plasma CVD method, and aluminum is formed by sputtering and etching is performed by photolithography. electrode. Secondly, in a hydrogen gas environment, after heat treatment and hydrogenation treatment, nitriding by plasma CVD The film formation of ruthenium forms a protective layer. Then, an ultraviolet curable resin is applied to the second main surface side of the glass substrate, and a planarization layer and a contact hole are formed by photolithography. Next, indium tin oxide is formed into a film by sputtering, and a pixel electrode is formed by etching using photolithography.

接下來,藉由蒸鍍法,於玻璃基板之第2主面側依序將下述成膜:作為電洞注入層為4,4’,4”-參(3-甲基苯基苯胺基)三苯胺;作為電洞輸送層為雙[(N-萘基)-N-苯基]聯苯胺;作為發光層為於8-喹啉酚鋁錯合物(Alq3)中混入40體積%之2,6-雙[4-[N-(4-甲氧苯基)-N-苯基]胺基苯乙烯基]萘-1,5-二碳腈(BSN-BCN)而成者;及作為電子輸送層為Alq3。其次,藉由濺鍍法將鋁成膜,並使用光刻法所行之蝕刻形成對向電極。接著,於玻璃基板之第2主面側,透過紫外線硬化型之接著層貼合另一片玻璃基板進行密封。藉由前述之程序於玻璃基板上形成有機EL構造體。玻璃基板上具有有機EL構造體之玻璃積層體S1(以下,稱「面板A」)即為本發明之附電子裝置用構件之積層體。 Next, the following film formation was sequentially performed on the second main surface side of the glass substrate by a vapor deposition method: 4,4',4"-parameter (3-methylphenylanilinyl group) as a hole injection layer Triphenylamine; as a hole transport layer is bis[(N-naphthyl)-N-phenyl]benzidine; as a light-emitting layer, 40% by volume is mixed in 8-quinolinol aluminum complex (Alq 3 ) 2,6-bis[4-[N-(4-methoxyphenyl)-N-phenyl]aminostyryl]naphthalene-1,5-dicarbonitrile (BSN-BCN); And the electron transport layer is Alq 3 . Next, aluminum is formed into a film by sputtering, and a counter electrode is formed by etching by photolithography. Then, on the second main surface side of the glass substrate, ultraviolet light is hardened. The other layer of the glass substrate is bonded to another glass substrate, and the organic EL structure is formed on the glass substrate by the above-described procedure. The glass laminate S1 having an organic EL structure on the glass substrate (hereinafter referred to as "panel A") That is, it is a laminate of the member for an electronic device of the present invention.

接著,於已使面板A之密封體側真空吸附於定盤上之狀態下,於面板A之角隅部之玻璃基板與樹脂層之界面插入厚度0.1mm之不鏽鋼製刀具,賦予玻璃基板與樹脂層之界面一剝離開端。然後,於已將面板A之支持基材表面以真空吸附墊吸附之狀態下,使吸附墊上升。於此處,刀具之插入係一邊自靜電消除器(KEYENCE CORPORATION製)朝該界面吹附除電性流體一邊進行。接下來,一邊繼續自靜電消除器朝著已形成之空隙吹附除電性流體,並且一邊將水 供於剝離前線一邊升高真空吸附墊。其結果為:定盤上僅留下形成有有機EL構造體之玻璃基板,而可將附樹脂層之支持基材剝離。 Next, in a state where the sealing body side of the panel A is vacuum-adsorbed on the fixing plate, a stainless steel cutter having a thickness of 0.1 mm is inserted into the interface between the glass substrate and the resin layer at the corner of the panel A, and the glass substrate and the resin are imparted. The interface of the layer is peeled off at the beginning. Then, the adsorption pad is raised in a state where the surface of the support substrate of the panel A has been adsorbed by the vacuum adsorption pad. Here, the insertion of the cutter is performed while blowing a static eliminating fluid from the static eliminator (manufactured by KEYENCE CORPORATION) toward the interface. Next, while continuing to blow the destaticizing fluid from the static eliminator toward the formed void, and water the side The vacuum adsorption pad is raised while peeling off the front line. As a result, only the glass substrate on which the organic EL structure was formed was left on the plate, and the support substrate with the resin layer was peeled off.

接著,使用雷射切割機或劃線裂片法(scribe breaking method)將經分離之璃基板切斷,於分割成多數單元後,與形成有有機EL構造體之玻璃基板及對向基板組裝,並實施模組形成步驟而製作OLED。如此所得之OLED特性上不會產生問題。 Next, the separated glass substrate is cut by a laser cutter or a scribe breaking method, and after being divided into a plurality of cells, the glass substrate and the counter substrate are formed with the organic EL structure, and The module forming step is performed to fabricate an OLED. The OLED characteristics thus obtained do not cause problems.

<實施例12> <Example 12>

於本例中,係使用於實施例1中所得之玻璃積層體S1製造LCD。 In this example, an LCD was produced using the glass laminate S1 obtained in Example 1.

首先,準備2片玻璃積層體S1,並於其中一玻璃積層體S1-1之玻璃基板之第2主面上,藉由電漿CVD法依序成膜氮化矽、氧化矽及非晶矽。其次,藉由離子摻雜裝置將低濃度的硼注入非晶矽層,並於氮氣體環境下做加熱處理且進行去氫處理。接著,藉由雷射退火裝置進行非晶矽層之結晶化處理。繼而,藉由使用光刻法所行之蝕刻及離子摻雜裝置,將低濃度的磷注入非晶矽層,而形成N型及P型之TFT區。接著,於玻璃基板之第2主面側,藉由電漿CVD法成膜氧化矽膜而形成閘絕緣膜後,藉由濺鍍法將鉬成膜,並使用光刻法所行之蝕刻形成閘電極。接下來,藉由光刻法及離子摻雜裝置,將高濃度的硼與磷注入N型、P型個別所欲之區域,而形成源極區及汲極區。繼而,於玻璃基板之第2主面側,利用電漿CVD法所行之氧化矽的成膜形成層間絕 緣膜,並利用濺鍍法成膜鋁及使用光刻法所行之蝕刻形成TFT電極。其次,於氫氣體環境下,做加熱處理並進行過氫化處理之後,利用電漿CVD法所行之氮化矽的成膜形成保護層。接著,於玻璃基板之第2主面側塗布紫外線硬化性樹脂,並藉由光刻法形成平坦化層及接觸孔。繼而,以濺鍍法將銦錫氧化物成膜,並使用光刻法所行之蝕刻形成畫素電極。 First, two glass laminates S1 are prepared, and on the second main surface of the glass substrate of one of the glass laminates S1-1, tantalum nitride, tantalum oxide, and amorphous germanium are sequentially formed by plasma CVD. . Next, a low concentration of boron is injected into the amorphous germanium layer by an ion doping apparatus, and heat treatment is performed in a nitrogen gas atmosphere to perform dehydrogenation treatment. Next, the crystallization treatment of the amorphous germanium layer is performed by a laser annealing apparatus. Then, by using an etching and ion doping apparatus which is performed by photolithography, a low concentration of phosphorus is implanted into the amorphous germanium layer to form N-type and P-type TFT regions. Next, on the second main surface side of the glass substrate, a ruthenium oxide film is formed by a plasma CVD method to form a gate insulating film, and then molybdenum is formed by sputtering, and etching is performed by photolithography. Gate electrode. Next, a high concentration of boron and phosphorus is implanted into the N-type and P-type regions as desired by photolithography and an ion doping apparatus to form a source region and a drain region. Then, on the second main surface side of the glass substrate, the ruthenium oxide formed by the plasma CVD method forms a layer between the layers. The film is formed by sputtering, and aluminum is formed by sputtering and etching is performed by photolithography to form a TFT electrode. Next, after heat treatment and hydrogenation treatment in a hydrogen gas atmosphere, a protective layer is formed by film formation of tantalum nitride by a plasma CVD method. Next, an ultraviolet curable resin is applied to the second main surface side of the glass substrate, and a planarization layer and a contact hole are formed by photolithography. Then, indium tin oxide is formed into a film by sputtering, and a pixel electrode is formed by etching by photolithography.

接著,將另一片玻璃積層體S1-2於大氣環境下進行加熱處理。其次,於玻璃積層體S1中之玻璃基板之第2主面上,藉由濺鍍法將鉻成膜,並使用光刻法所行之蝕刻形成遮光層。繼而,於玻璃基板之第2主面側,以模塗法塗布彩色光阻,並藉由光刻法及熱硬化而形成濾色片層。接下來,以濺鍍法將銦錫氧化物成膜而形成對向電極。繼而,於玻璃基板之第2主面側,以模塗法塗布紫外線硬化樹脂液,並藉由光刻法及熱硬化而形成柱狀間隔件。接著,以輥塗法塗布聚醯亞胺樹脂液,並藉由熱硬化形成配向層,並且進行摩擦。 Next, another glass laminated body S1-2 is heat-treated under an atmospheric environment. Next, chromium is formed on the second main surface of the glass substrate in the glass laminate S1 by sputtering, and a light shielding layer is formed by etching by photolithography. Then, a color resist is applied by a die coating method on the second main surface side of the glass substrate, and a color filter layer is formed by photolithography and thermal curing. Next, indium tin oxide is formed into a film by sputtering to form a counter electrode. Then, on the second main surface side of the glass substrate, the ultraviolet curable resin liquid was applied by a die coating method, and a columnar spacer was formed by photolithography and thermal curing. Next, the polyimide solvent solution was applied by a roll coating method, and an alignment layer was formed by thermal hardening, and rubbing was performed.

接下來,藉由分配器方式將密封用樹脂液描繪成框狀,並於框內藉由分配器方式將液晶滴下之後,使用前述形成有畫素電極之玻璃積層體S1-1,將2片玻璃積層體S1之玻璃基板之第2主面側彼此貼合,並藉由紫外線硬化及熱硬化而製得LCD面板。 Next, the sealing resin liquid is drawn into a frame shape by a dispenser method, and the liquid crystal is dropped by a dispenser in a frame, and then the glass laminated body S1-1 having the pixel electrode formed thereon is used. The second main surface side of the glass substrate of the glass laminate S1 is bonded to each other, and an LCD panel is produced by ultraviolet curing and heat curing.

繼而,使玻璃積層體S1-1之支持基材之第2主面真空吸附於定盤上,並於玻璃積層體S1-2之角隅部之玻璃 基板與樹脂層之界面插入厚度0.1mm之不鏽鋼製刀具,賦予玻璃基板之第1主面與樹脂層之剝離性表面一剝離開端。於此處,刀具之插入係一邊自靜電消除器(KEYENCE CORPORATION製)對該界面吹附除電性流體一邊進行。接著,一邊繼續自靜電消除器朝著已形成之空隙吹附除電性流體,一邊將水供於剝離前線一邊升高真空吸附墊。然後,於已將玻璃積層體S1-2之支持基材之第2主面以真空吸附墊吸附的情況下使吸附墊上升。其結果為:於定盤上僅留下附有玻璃積層體S1-1之支持基材的LCD之空單元,而可將附樹脂層之支持基材剝離。 Then, the second main surface of the support substrate of the glass laminate S1-1 is vacuum-adsorbed on the fixed plate, and the glass at the corner of the glass laminate S1-2 A stainless steel cutter having a thickness of 0.1 mm was inserted into the interface between the substrate and the resin layer, and the first main surface of the glass substrate was peeled off from the peeling surface of the resin layer. Here, the inserting of the cutter was performed while blowing a static eliminating fluid to the interface from a static eliminator (manufactured by KEYENCE CORPORATION). Next, while continuing to eject the destaticizing fluid from the static eliminator toward the formed void, the water is supplied to the peeling front line to raise the vacuum suction pad. Then, when the second main surface of the support substrate of the glass laminate S1-2 is adsorbed by the vacuum adsorption pad, the adsorption pad is raised. As a result, only the empty cells of the LCD with the support substrate of the glass laminate S1-1 are left on the fixed plate, and the support substrate with the resin layer can be peeled off.

其次,使第1主面形成有濾色片之玻璃基板的第2主面真空吸附於定盤,並於玻璃積層體S1-1之角隅部之玻璃基板與樹脂層之界面插入厚度0.1mm之不鏽鋼製刀具,賦予玻璃基板第1主面與樹脂層之剝離性表面一剝離開端。然後,於已將玻璃積層體S1-1之支持基材之第2主面以真空吸附墊吸附的情況下,一邊將水噴附於玻璃基板與樹脂層之間一邊使吸附墊上升。其結果為:於定盤上僅留下LCD單元,而可將固定有樹脂層之支持基材剝離。如此一來即可製得以厚度0.1mm之玻璃基板構成之多數LCD單元。 Next, the second main surface of the glass substrate on which the color filter is formed on the first main surface is vacuum-adsorbed to the fixed plate, and the thickness of the interface between the glass substrate and the resin layer at the corner portion of the glass laminate S1-1 is 0.1 mm. The stainless steel cutter is provided with a peeling open end of the first main surface of the glass substrate and the peeling surface of the resin layer. Then, when the second main surface of the support substrate of the glass laminate S1-1 is adsorbed by the vacuum adsorption pad, the adsorption pad is raised while spraying water between the glass substrate and the resin layer. As a result, only the LCD unit is left on the fixing plate, and the supporting substrate to which the resin layer is fixed can be peeled off. In this way, a plurality of LCD units composed of a glass substrate having a thickness of 0.1 mm can be produced.

接著,藉由切割步驟分割成多數LCD單元。對經完成之各個LCD單元實施貼上偏光板之步驟,繼而實施模組形成步驟而製得LCD。如此所得之LCD特性上不會產生問題。 Then, it is divided into a plurality of LCD units by a cutting step. An LCD is prepared by performing a step of applying a polarizing plate to each of the completed LCD units, and then performing a module forming step. There is no problem in the LCD characteristics thus obtained.

<實施例13> <Example 13>

於本例中,係使用於實施例1中所得之玻璃積層體S1製造OLED。 In this example, an OLED was produced using the glass laminate S1 obtained in Example 1.

首先,於玻璃積層體S1中之玻璃基板之第2主面上,藉由濺鍍法將鉬成膜,並使用光刻法所行之蝕刻形成閘電極。其次,藉由濺鍍法,進一步於玻璃基板之第2主面側將氧化鋁成膜而形成閘絕緣膜,繼而藉由濺鍍法將銦鎵鋅氧化物成膜並使用光刻法所行之蝕刻形成氧化物半導體層。接著,藉由濺鍍法,更進一步於玻璃基板之第2主面側將氧化鋁成膜而形成通道保護層,繼而以濺鍍法將鉬成膜並且使用光刻法所行之蝕刻而形成源極及汲極。 First, molybdenum is formed on the second main surface of the glass substrate in the glass laminate S1 by sputtering, and a gate electrode is formed by etching by photolithography. Next, a sputtering film is formed on the second main surface side of the glass substrate by a sputtering method to form a gate insulating film, and then indium gallium zinc oxide is formed by sputtering and photolithography is used. The etching forms an oxide semiconductor layer. Then, by a sputtering method, an aluminum oxide is formed on the second main surface side of the glass substrate to form a channel protective layer, and then molybdenum is formed by sputtering and formed by etching by photolithography. Source and bungee.

其次,於大氣中進行加熱處理。接著,更進一步於玻璃基板之第2主面側藉由濺鍍法將氧化鋁成膜而形成保護層,繼而藉由濺鍍法將銦錫氧化物成膜並使用光刻法所行之蝕刻形成畫素電極。 Next, heat treatment is performed in the atmosphere. Then, a film is formed by sputtering on the second main surface side of the glass substrate to form a protective layer, and then indium tin oxide is formed by sputtering and etched by photolithography. Form a pixel electrode.

接著,藉由蒸鍍法,於玻璃基板之第2主面側依序將下述成膜:作為電洞注入層為4,4’,4”-參(3-甲基苯基苯胺基)三苯胺;作為電洞輸送層為雙[(N-萘基)-N-苯基]聯苯胺;作為發光層為於8-喹啉酚鋁錯合物(Alq3)中混入40體積%之2,6-雙[4-[N-(4-甲氧苯基)-N-苯基]胺基苯乙烯基]萘-1,5-二碳腈(BSN-BCN)而成者;及作為電子輸送層為Alq3。其次,以濺鍍法將鋁成膜,並使用光刻法所行之蝕刻形成對向電極。接著,於玻璃基板之第2主面側,透過紫外線硬化型之接著層貼合另一片玻璃基板進行密封。藉由前述程序於玻璃基板上形成有機EL構造體。玻璃基板上具有有機EL 構造體之玻璃積層體S1(以下,稱「面板B」)即為本發明之附電子裝置用構件之積層體(附支持基材之顯示裝置用面板)。 Next, the following film formation was performed on the second main surface side of the glass substrate by a vapor deposition method: 4,4′,4′′-para (3-methylphenylanilinyl) as a hole injection layer. Triphenylamine; as a hole transport layer is bis[(N-naphthyl)-N-phenyl]benzidine; as a light-emitting layer, 40% by volume is mixed in the 8-quinolinol aluminum complex (Alq 3 ) 2,6-bis[4-[N-(4-methoxyphenyl)-N-phenyl]aminostyryl]naphthalene-1,5-dicarbonitrile (BSN-BCN); and The electron transporting layer is Alq 3 . Next, aluminum is formed into a film by a sputtering method, and a counter electrode is formed by etching by photolithography. Then, the second main surface side of the glass substrate is passed through an ultraviolet curing type. Then, the other glass substrate is bonded to the other layer, and the organic EL structure is formed on the glass substrate by the above procedure. The glass laminate S1 (hereinafter referred to as "panel B") having the organic EL structure on the glass substrate is A laminated body of a member for an electronic device according to the invention (a panel for a display device with a supporting substrate).

繼而,於已使面板B之密封體側真空吸附於定盤上之狀態下,於面板B之角隅部之玻璃基板與樹脂層之界面插入厚度0.1mm之不鏽鋼製刀具,賦予玻璃基板與樹脂層之界面一剝離開端。然後,於已將面板B之支持基材表面以真空吸附墊吸附之狀態下,使吸附墊上升。於此處,刀具之插入係一邊自靜電消除器(KEYENCE CORPORATION製)對該界面吹附除電性流體一邊進行。接著,一邊繼續自靜電消除器朝著已形成之空隙吹附除電性流體,並一邊將水供於剝離前線一邊升高真空吸附墊。其結果為:於定盤上僅留下形成有有機EL構造體之玻璃基板,而可將附樹脂層之支持基材剝離。 Then, in a state where the sealing body side of the panel B is vacuum-adsorbed on the fixing plate, a stainless steel cutter having a thickness of 0.1 mm is inserted into the interface between the glass substrate and the resin layer at the corner of the panel B to impart a glass substrate and a resin. The interface of the layer is peeled off at the beginning. Then, the adsorption pad is raised in a state where the surface of the support substrate of the panel B has been adsorbed by the vacuum adsorption pad. Here, the inserting of the cutter was performed while blowing a static eliminating fluid to the interface from a static eliminator (manufactured by KEYENCE CORPORATION). Next, the destaticizing fluid is continuously blown from the static eliminator toward the formed void, and the vacuum adsorption pad is raised while supplying water to the peeling front line. As a result, only the glass substrate on which the organic EL structure was formed was left on the plate, and the support substrate with the resin layer was peeled off.

接著,使用雷射切割機或劃線裂片法將經分離之璃基板切斷,並於分割成多數單元後,與形成有有機EL構造體之玻璃基板及對向基板做組裝,並實施模組形成步驟而製作OLED。如此所得之OLED特性上不會產生問題。 Then, the separated glass substrate is cut by a laser cutting machine or a scribing splicing method, and after being divided into a plurality of units, the glass substrate and the opposite substrate on which the organic EL structure is formed are assembled, and the module is implemented. The formation step produces an OLED. The OLED characteristics thus obtained do not cause problems.

另外,在此援引已於2014年2月7日提出申請之日本專利申請案第2014-022697號之說明書、申請專利範圍、摘要及圖式之全部內容,並將其納入作為本發明說明書之揭示。 In addition, the entire contents of the specification, the scope of the application, the abstract and the drawings of the Japanese Patent Application No. 2014-022697, filed on Feb. 7, 2014, the entire contents of .

Claims (13)

一種玻璃積層體,依序具備有支持基材層、矽氧樹脂層及玻璃基板層;前述矽氧樹脂層中之矽氧樹脂具有下述T3所示之有機矽氧基單元,且相對於全部有機矽氧基單元,下述T3所示之有機矽氧基單元的合計比率為80~100莫耳%;下述T3中R為苯基之有機矽氧基單元(A-1)與下述T3中R為甲基之有機矽氧基單元(B-1)之莫耳比((A-1)/(B-1))為80/20~20/80;並且,前述矽氧樹脂層對於前述玻璃基板層之界面剝離強度與前述矽氧樹脂層對於前述支持基材層之界面剝離強度不同;T3:R-SiO3/2(式中,R表示苯基或甲基)。 A glass laminate comprising a support base layer, a silicone resin layer and a glass substrate layer; wherein the epoxy resin in the epoxy resin layer has an organic phosphonium unit represented by the following T3, and is relative to all The organic decyloxy unit, the total ratio of the organic decyloxy unit represented by the following T3 is 80 to 100 mol%; and in the following T3, R is a phenyl organic decyloxy unit (A-1) and the following The molar ratio ((A-1)/(B-1)) of the organic decyloxy unit (B-1) wherein R is a methyl group in T3 is 80/20 to 20/80; and the above-mentioned epoxy resin layer The interfacial peel strength of the glass substrate layer is different from the interfacial peel strength of the above-mentioned niobium oxide layer to the support substrate layer; T3: R-SiO 3/2 (wherein R represents a phenyl group or a methyl group). 如請求項1之玻璃積層體,其中前述矽氧樹脂更具有下述Q所示之有機矽氧基單元:Q:SiO4/2The glass laminate according to claim 1, wherein the above-mentioned oxime resin further has an organic decyloxy unit represented by Q: Q: SiO 4/2 . 如請求項1之玻璃積層體,其中前述矽氧樹脂為硬化性有機聚矽氧之硬化物;且前述硬化性有機聚矽氧係按以下比例含有下述T1~T3所示有機矽氧基單元的有機聚矽氧:以前述單元之個數比例(莫耳量)計,T1:T2:T3=0~5:20~50: 50~80(惟,滿足T1+T2+T3=100之關係):T1:R-Si(-OX)2O1/2 T2:R-Si(-OX)O2/2 T3:R-SiO3/2(式中,R表示苯基或甲基;X則表示氫原子或碳數1~6之烷基)。 The glass laminate according to claim 1, wherein the oxime resin is a cured product of a curable organopolyfluorene; and the curable organopolysiloxane contains the organic methoxy unit represented by the following T1 to T3 in the following ratio; Organic polyfluorene: in terms of the number of units (molar amount), T1: T2: T3 = 0 to 5: 20 to 50: 50 to 80 (however, the relationship of T1 + T2 + T3 = 100 is satisfied) ): T1: R-Si(-OX) 2 O 1/2 T2: R-Si(-OX)O 2/2 T3: R-SiO 3/2 (wherein R represents a phenyl group or a methyl group; X It means a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. 如請求項2之玻璃積層體,其中前述矽氧樹脂為硬化性有機聚矽氧之硬化物;且前述硬化性有機聚矽氧係按以下比例含有下述T1~T3所示有機矽氧基單元的有機聚矽氧:以前述單元之個數比例(莫耳量)計,T1:T2:T3=0~5:20~50:50~80(惟,滿足T1+T2+T3=100之關係):T1:R-Si(-OX)2O1/2 T2:R-Si(-OX)O2/2 T3:R-SiO3/2(式中,R表示苯基或甲基;X則表示氫原子或碳數1~6之烷基)。 The glass laminate according to claim 2, wherein the oxime resin is a cured organic sulfonate; and the sclerosing organopolyoxygen contains the following organic methoxy unit represented by T1 to T3 in the following ratio; Organic polyfluorene: based on the number of units (molar amount), T1: T2: T3 = 0 to 5: 20 to 50: 50 to 80 (however, the relationship of T1 + T2 + T3 = 100 is satisfied) ): T1: R-Si(-OX) 2 O 1/2 T2: R-Si(-OX)O 2/2 T3: R-SiO 3/2 (wherein R represents a phenyl group or a methyl group; X It means a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. 如請求項3之玻璃積層體,其中前述硬化性有機聚矽氧之數目平均分子量為500~2000。 The glass laminate according to claim 3, wherein the hardening organic polyfluorene has a number average molecular weight of 500 to 2,000. 如請求項4之玻璃積層體,其中前述硬化性有機聚矽氧之數目平均分子量為500~2000。 The glass laminate according to claim 4, wherein the hardening organic polyfluorene has a number average molecular weight of 500 to 2,000. 如請求項3之玻璃積層體,其中前述硬化性有機聚矽氧之質量平均分子量/數目平均分子量為1.00~2.00。 The glass laminate according to claim 3, wherein the mass average molecular weight/number average molecular weight of the hardenable organopolyfluorene is from 1.00 to 2.00. 如請求項3至7中任一項之玻璃積層體,其藉由動態光散 射法測出之前述硬化性有機聚矽氧之粒徑為0.5~100nm。 The glass laminate according to any one of claims 3 to 7, which is characterized by dynamic light dispersion The particle size of the aforementioned curable organic polyfluorene oxide measured by the sputtering method is 0.5 to 100 nm. 如請求項3至7中任一項之玻璃積層體,其中前述硬化性有機聚矽氧係將苯基三氯矽烷與甲基三氯矽烷進行共水解縮合而得之有機聚矽氧。 The glass laminate according to any one of claims 3 to 7, wherein the curable organopolyfluorene is an organopolyoxygen obtained by cohydrolyzing and condensing phenyltrichloromethane with methyltrichloromethane. 如請求項1至7中任一項之玻璃積層體,其中前述矽氧樹脂層之厚度為0.1~30μm。 The glass laminate according to any one of claims 1 to 7, wherein the thickness of the above-mentioned silicone resin layer is 0.1 to 30 μm. 如請求項1至7中任一項之玻璃積層體,其中前述支持基材為玻璃板。 The glass laminate according to any one of claims 1 to 7, wherein the aforementioned support substrate is a glass plate. 如請求項1至7中任一項之玻璃積層體,其中前述矽氧樹脂層對於前述玻璃基板層之界面剝離強度低於前述矽氧樹脂層對於前述支持基材層之界面剝離強度。 The glass laminate according to any one of claims 1 to 7, wherein the interfacial peel strength of the silicone resin layer to the glass substrate layer is lower than the interfacial peel strength of the epoxy resin layer to the support substrate layer. 如請求項1至7中任一項之玻璃積層體,其中前述矽氧樹脂層對於前述玻璃基板層之界面剝離強度高於前述矽氧樹脂層對於前述支持基材層之界面剝離強度。 The glass laminate according to any one of claims 1 to 7, wherein the interfacial peel strength of the epoxy resin layer to the glass substrate layer is higher than the interfacial peel strength of the epoxy resin layer to the support substrate layer.
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