TWI646677B - Image sensor and manufacturing method thereof - Google Patents

Abstract

The disclosure provides an image sensor and a method of fabricating the same. The image sensor includes a pixel sensing circuit, a pixel electrode, and a photoelectric conversion layer. The pixel sensing circuit corresponds to at least one of the first pixel region and the second pixel region. The pixel electrode is disposed on the pixel sensing circuit, wherein the pixel electrode corresponds to the first pixel region and the second pixel region, and the pixel electrode comprises a first electrode and a second electrode and is electrically connected to the pixel sensing a circuit, wherein the first electrode and the second electrode are coplanar, the first electrode and the second electrode have different polarities, and the first electrode or the second electrode located in the first pixel region is adjacent to the second pixel A first electrode or a second electrode having the same polarity in the region. The photoelectric conversion layer is disposed on the pixel sensing circuit and the pixel electrode, wherein the photoelectric conversion layer comprises a photosensitive layer and a carrier transport layer, the photosensitive layer is located on the carrier transport layer, and the carrier transport layer is located on the pixel electrode and the photosensitive layer Between the layers.

Description

Image sensor and manufacturing method thereof

The disclosure relates to an image sensor and a method of fabricating the same.

In recent years, in order to enable the CMOS Image Sensor to have a bright performance in a dark light source environment, the related companies have focused on developing high-sensitivity sensing elements.

However, in general, a photosensitive material mainly composed of a ruthenium material is used, in order to increase the resolution under the same wafer area, the pixel number is greatly increased, the pixel size is continuously reduced, and the amount of light entering each pixel is relatively reduced. Light collection area. Due to the limitation of the amount of light entering the light-receiving element and the light-receiving area, even if the semiconductor process continues to advance, the pixel area of the sensing element can no longer be reduced, and the number of pixels can no longer be increased, so the resolution of the image sensing chip can no longer be improved. Therefore, how to increase the amount of light entering and the area of light collection is the current discussion, and it is also the development focus of current image sensing components.

According to an embodiment of the present disclosure, an image sensor is proposed. The image sensor includes a pixel sensing circuit, a pixel electrode, and a photoelectric conversion layer. The pixel sensing circuit corresponds to at least one of the first pixel region and the second pixel region. The pixel electrode is disposed on the pixel sensing circuit, wherein the pixel electrode corresponds to the first pixel region and the second pixel region, and the pixel electrode comprises a first electrode and a second electrode and is electrically connected to the pixel sensing a circuit, wherein the first electrode and the second electrode are coplanar, the first electrode and the second electrode have different polarities, and the first electrode or the second electrode located in the first pixel region is adjacent to the second pixel A first electrode or a second electrode having the same polarity in the region. The photoelectric conversion layer is disposed on the pixel sensing circuit and the pixel electrode, wherein the photoelectric conversion layer comprises a photosensitive layer and a carrier transport layer, the photosensitive layer is located on the carrier transport layer, and the carrier transport layer is located on the pixel electrode and the photosensitive layer Between the layers.

According to another embodiment of the present disclosure, an image sensor is provided. The image sensor includes a pixel sensing circuit, a pixel isolation structure, a pixel electrode, and a photoelectric conversion layer. The pixel isolation structure is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode, and the first electrode and the second electrode are electrically connected to the pixel sensing circuit, wherein the first electrode and the second electrode are coplanar with each other. The photoelectric conversion layer is disposed on the pixel sensing circuit, wherein the photoelectric conversion layer is located in the pixel isolation structure, and the top surface of the photoelectric conversion layer is lower than the top surface of the pixel isolation structure.

According to still another embodiment of the present disclosure, an image sensor is provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and a photoelectric conversion layer. The pixel sensing circuit corresponds to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit, the pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit, wherein the first electrode and the second electrode are coplanar, One electric The pole and the second electrode have different polarities. The photoelectric conversion layer is disposed on the pixel sensing circuit, and the photoelectric conversion layer has a plurality of photoelectric conversion layer blocks, each of the photoelectric conversion layer blocks respectively corresponding to each pixel region, and the photoelectric conversion layer blocks are mutually connected via A pixel isolation trench is separated.

According to still another embodiment of the present disclosure, a method of fabricating an image sensor is provided. The method for manufacturing an image sensor includes the following steps: providing a pixel sensing circuit, the pixel sensing circuit corresponding to the plurality of pixel regions; and setting a pixel electrode on the pixel sensing circuit, the pixel electrode includes a first An electrode and a second electrode are electrically connected to the pixel sensing circuit, wherein the first electrode and the second electrode are coplanar, the first electrode and the second electrode have different polarities; and a photoelectric conversion layer is disposed On the sensing circuit, the photoelectric conversion layer has a plurality of photoelectric conversion layer blocks, each of the photoelectric conversion layer blocks respectively corresponding to each pixel region, and the photoelectric conversion layer blocks are connected to each other via a pixel isolation trench Separated by.

In order to provide a better understanding of the above and other aspects of the present invention, various embodiments are described below in detail as follows:

10, 20-1, 20-2, 30, 40, 40-1, 40-2, 40-3, 50, 60, 70, 80, 90, 90-1, 1200, 1200-1, 1200-2‧ ‧‧Image sensor

100‧‧‧ pixel sensing circuit

110‧‧‧矽 substrate

120‧‧‧Electronic components

200‧‧‧ pixel isolation structure

200a, 230a, 250a, 300a‧‧‧ top surface

210‧‧‧First electrode

220‧‧‧second electrode

230, 240‧‧‧ non-conductive layer

250, M1~Mn‧‧‧ metal layer

300‧‧‧ photoelectric conversion layer

300-1~300-5‧‧‧ photoelectric conversion layer block

300T‧‧‧ pixel isolation trench

310‧‧‧Photosensitive layer

320‧‧‧ Carrier Transport Layer

330‧‧‧Photoelectric conversion material first precursor material

330-1, 330-2‧‧‧Parts of the first material

340‧‧‧Photoelectric conversion material second precursor material

400‧‧‧Water Oxygen Protective Layer

1B-1B’, 3B-3B’, 4B-4B’‧‧‧ hatching

C1, C2, V1, V2, S‧‧‧ connecting columns

P1~P8‧‧‧ pixel area

PR‧‧‧ patterned photoresist layer

△H‧‧‧ height difference

FIG. 1A is a top view of an image sensor according to an embodiment of the present disclosure.

Fig. 1B is a schematic cross-sectional view along section line 1B-1B'.

FIG. 2A is a schematic diagram of an image sensor according to another embodiment of the disclosure.

FIG. 2B is a schematic diagram of an image sensor according to another embodiment of the disclosure.

FIG. 3A is a top view of an image sensor according to still another embodiment of the disclosure.

Fig. 3B is a schematic cross-sectional view along section line 3B-3B'.

FIG. 4A is a top view of an image sensor according to still another embodiment of the present disclosure.

Fig. 4B is a schematic cross-sectional view along section line 4B-4B'.

4C through 4E are cross-sectional views showing various embodiments along section line 4B-4B'.

FIG. 5 is a schematic diagram of an image sensor according to a further embodiment of the disclosure.

FIG. 6 is a schematic diagram of an image sensor according to still another embodiment of the present disclosure.

FIG. 7 is a top view of an image sensor according to still another embodiment of the present disclosure.

FIG. 8 is a top view of an image sensor according to still another embodiment of the present disclosure.

FIG. 9 is a top view of an image sensor according to still another embodiment of the present disclosure.

FIG. 9A is a top view of an image sensor according to still another implementation of the disclosure.

10A to 10D are schematic views showing a method of manufacturing an image sensor according to an embodiment of the present invention.

11A to 11C are schematic views showing a method of manufacturing an image sensor according to another embodiment of the present invention.

FIG. 12 is a cross-sectional view showing an image sensor according to still another embodiment of the present disclosure.

12A to 12B are cross-sectional views showing an image sensor of still further embodiments of the present disclosure.

13A to 13F are schematic views showing a method of manufacturing an image sensor according to still another embodiment of the present invention.

In an embodiment of the disclosure, the top surface of the photoelectric conversion layer of the image sensor is lower than the top surface of the pixel isolation structure, so that the photoelectric conversion is completed because of the difference in height between the two top surfaces. The layer is isolated by a pixel isolation structure in one pixel region, so that the problem of cross talk of the photoelectric conversion layer in the adjacent pixel region can be avoided. The embodiments of the present disclosure are described in detail below. The details of the embodiments are for illustrative purposes and are not intended to limit the scope of the disclosure. Those having ordinary knowledge may modify or change the components as needed in accordance with the actual implementation.

1A is a top view of an image sensor according to an embodiment of the present disclosure, and FIG. 1B is a cross-sectional view taken along line 1B-1B' of FIG. 1A. As shown in FIGS. 1A-1B, the image sensor 10 includes a pixel sensing circuit 100, a pixel electrode (210, 220), a photoelectric conversion layer 300, and a water and oxygen protection layer 400. The pixel sensing circuit 100 corresponds to at least a first pixel region P1 and a second pixel region P2 adjacent to each other. The pixel electrode is disposed on the pixel sensing circuit 100. The pixel electrode corresponds to the first pixel region P1 and the second pixel region P2. The pixel electrode includes a first electrode 210 and a second electrode 220 and is electrically connected. To the pixel sensing circuit 100. First electrode 210 The first electrode 210 and the second electrode 220 have different polarities, and the first electrode 210 or the second electrode 220 located in the first pixel region P1 is adjacent to the second pixel. The first electrode 210 or the second electrode 220 having the same polarity in the region P2. The photoelectric conversion layer 300 is disposed on the pixel sensing circuit 300 and the pixel electrode. The photoelectric conversion layer 300 includes a photosensitive layer 310 and a carrier transport layer 320. The photosensitive layer 310 is located on the carrier transport layer 320, and the carrier transport layer 320 is located between the pixel electrodes (the first electrode 210 and the second electrode 220) and the photosensitive layer 310.

In the photoelectric conversion layer 300, the photosensitive layer 310 absorbs photons to generate excitons, and the excitons are separated into electrons and holes, and the electrons and holes are moved to the two electrodes to form photocurrents under the influence of the electric field. Under actual operating conditions, the generation of the electric field may come from the electrode, the energy level difference of each layer in the photoelectric conversion layer 300, or the applied operating voltage. In the embodiment, the carrier transport layer 320 may be an electron transport layer (ETL) or a hole transport layer (HTL), which can enhance exciton separation and conduct carriers, and thus can improve the overall photoelectric conversion efficiency of the photoelectric conversion layer 300. Further, the carrier transport layer 320 may also have a function as a carrier barrier layer, in other words, it is possible to block the carrier from flowing back to the photoelectric conversion layer 300 by the electrodes, and thus it is possible to effectively suppress a dark current. Alternatively, the carrier transport layer 320 can also prevent the interaction between the photosensitive layer 310 and the electrode interface, and has the function of improving the electrode stability.

In the embodiment, the material of the carrier transport layer 320 includes titanium oxide (TiO ₂ ), zinc oxide (ZnO), aluminum oxide (Al ₂ O ₃ ), fullerene derivative (PCBM), poly 3,4-vinyl Dioxythiophene: polystyrene sulfonate (PEDOC: PSS), nickel oxide (NiO) and/or vanadium oxide (V ₂ O ₅ ), PFN, ethoxylated polyethyleneimine (PEIE), polyethyleneimine (PEI), molybdenum trioxide (MoO ₃ ), tungsten trioxide (WO ₃ ), LiF (lithium fluoride), 4,7-diphenyl-1,10-phenanthroline (bphen,bathophenanthroline), 8- Aluminum hydroxyquinolate (Alq3), but is not limited thereto.

Since the generation of the electric field may come from the energy level difference of the electrodes, the layers in the photoelectric conversion layer 300, or the applied operating voltage, the electrons and the holes may be affected by the electric field to form a photocurrent, so when the carrier transport layer 320 serves as a load When the sub-barrier layer functions, the applicable material can be selected via energy level matching, and the dark current can be effectively reduced without sacrificing too much photoelectric conversion efficiency.

In one embodiment, an energy barrier formed by the carrier transport layer 320 and the pixel electrode is, for example, greater than an operating voltage of the image sensor. For example, the energy barrier formed by the carrier transport layer 320 and the pixel electrode is, for example, greater than about 0.3 electron volts (eV) of the operating voltage of the image sensor. In this way, it is possible to avoid that the electrons or electric power on the electrode have sufficient energy to pass the energy barrier to generate a dark current due to the application of the operating voltage.

For example, the carrier transport layer 320 as a carrier barrier layer may include three types of barrier layers: (1), an electron, a hole barrier layer, and the material thereof may be, for example, 1,3,5-tris(1-benzene 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene, TPBI), 4,4',4"-tris(carbazole-9- (Tris(4-carbazoyl-9-ylphenyl)amine, TCTA); (2) a hole barrier layer, the material of which may be, for example, titanium oxide (TiO ₂ ), zinc oxide (ZnO); and (3) The electron blocking layer may be made of PFN, molybdenum trioxide (MoO ₃ ), N, N'-diphenyl-N, N'-(1-naphthyl)-1,1'-biphenyl-4, for example. 4'-Diamine (N,N'-Bis-(1-naphthalenyl)-N,N'-bis-phenyl-(1,1'-biphenyl)-4,4'-diamine, NPB). The material can be matched with, for example, a pixel electrode made of aluminum (having a work function of about 4.2 eV) and a photosensitive layer 310 made of a perovskite material (the highest filling sub-orbital energy level of the perovskite is about 5.45 eV, the minimum is not The filling sub-track domain energy level is about 3.95 eV).

In the embodiment, the material of the first electrode 210 is different from the material of the second electrode 220, for example, by using different work functions of different electrode materials to match the energy levels of the photoelectric conversion layer 300, thereby further improving the photoelectric conversion layer 300. Conversion efficiency and suppression of dark current. In some embodiments, the material of the first electrode 210 and the material of the second electrode 210 may include aluminum, gold, silver, titanium, nickel, copper, tungsten, tantalum, titanium nitride (TiN), and an alloy of the foregoing metals, And/or coated with titanium nitride or other semiconductor process compatible metals.

In the embodiment, in the photoelectric conversion layer 300, a photosensitive layer (not shown) may be disposed on the photosensitive layer 310 to reduce defects on the surface of the photosensitive layer 310 or between the crystal gaps. The material of the modifying layer can be a fullerene derivative (PCBM) or other material that reduces the dangling bond.

FIG. 2A is a schematic diagram of an image sensor according to another embodiment of the disclosure. The same or similar components as those of the above-mentioned embodiments are denoted by the same or similar components, and the related descriptions of the same or similar components are referred to the foregoing, and are not described herein again.

As shown in FIG. 2A, the image sensor 20-1 includes a pixel sensing circuit 100, a pixel electrode, a pixel isolation structure 200, and a photoelectric conversion layer 300. The pixel isolation structure 200 is disposed on the pixel sensing circuit 100. In an embodiment, the pixel electrode includes a first electrode 210 and a second electrode 220 , and the first electrode 210 and the second electrode 220 are electrically connected to the pixel sensing circuit 100 . The photoelectric conversion layer 300 is disposed on the pixel sensing circuit 100, and the photoelectric conversion layer 300 is located in the pixel isolation structure 200, and a top surface 300a of the photoelectric conversion layer 300 is lower than a top surface 200a of the pixel isolation structure 200.

In the embodiment, as shown in FIG. 2A, the height difference ΔH of the top surface 300a of the photoelectric conversion layer 300 and the top surface 200a of the pixel isolation structure 200 is, for example, greater than 0, and can be adjusted according to various processes. For example, in one embodiment, the height difference ΔH may be, for example, greater than or equal to 0.1 μm. In some embodiments, the height of the photoelectric conversion layer 300 is, for example, 0.2 to 0.5 μm, and the height of the pixel isolation structure 200 is, for example, >0.2 μm. In some other embodiments, the top surface 300a of the photoelectric conversion layer 300 and the top surface 200a of the pixel isolation structure 200 may also be flush (not shown in the drawing), and the height difference ΔH is equal to 0 (equivalent to Does not have a height difference).

In the embodiment, the top surface 300a of the photoelectric conversion layer 300 is lower than the top surface 200a of the pixel isolation structure 200, because the height difference ΔH naturally causes the completed photoelectric conversion layer 300 to be isolated by a pixel isolation structure 200 in one pixel. In the region, it is therefore possible to avoid the problem of cross talk of the photoelectric conversion layer 300 in the adjacent pixel regions.

As shown in FIG. 2A, the first electrode 210 and the second electrode 220 are both disposed on the pixel sensing circuit 100 and are coplanar with each other. Compared with the design in which the two electrodes are generally stacked one on top of the other, the planar single-layer electrode design of the first electrode 210 and the second electrode 220 can further increase the amount of light incident.

In an embodiment, the material of the first electrode 210 and the material of the second electrode 220 may be the same or different. In an embodiment, the materials of the first electrode 210 and the second electrode 220 may include, for example, aluminum, gold, silver, titanium, nickel, tantalum, tungsten, and/or copper, titanium nitride, and/or aluminum coated with titanium nitride, respectively. Or other semiconductor process compatible metals, but are not limited to this.

In some embodiments, the photoelectric conversion layer 300 may include an organic material or an inorganic organic composite material, for example, a quantum dot material, a single crystal perovskite structure, methyl ammonium lead iodide perovskite. Material, polycrystalline perovskite structure methyl ammonium iodide lead material, amorphous phase perovskite structure methyl ammonium iodide lead material or single crystal, polycrystalline or amorphous phase perovskite structure A A methyl ammonium lead iodide chloride perovskite material. For example, the quantum dot material may be a quantum dot film, and the perovskite structure methyl ammonium iodide lead material is, for example, a perovskite structure methyl ammonium triiodide (CH ₃ NH ₃ PbI). ₃ ) nanowire, perovskite structure methyl ammonium chloride lead iodide material such as perovskite structure methyl ammonium chloride lead diiodide (CH ₃ NH ₃ PbI ₂ Cl) or perovskite The structure of methylammonium is doped with lead chloroiodide (CH ₃ NH ₃ PbI _3-x Cl _x ).

As shown in FIG. 2A, in the embodiment, the image sensor 20-1 may further include a water and oxygen protection layer 400, and the water oxygen protection layer 400 covers the pixel sensing circuit 100, the pixel isolation structure 200, and the photoelectric conversion layer. 300.

FIG. 2B is a schematic diagram of an image sensor according to another embodiment of the disclosure. The same or similar components as those of the above-mentioned embodiments are denoted by the same or similar components, and the related descriptions of the same or similar components are referred to the foregoing, and are not described herein again. The difference between this embodiment and the embodiment shown in FIG. 2A is mainly in the design of the photoelectric conversion layer 300.

Referring to FIG. 2B, in the image sensor 20-2, the photoelectric conversion layer 300 may include a photosensitive layer 310 and a carrier transport layer 320. The carrier transport layer 320 is disposed on the pixel electrode (the first electrode 210, the first Between the two electrodes 220) and the photosensitive layer 310. In an embodiment, the carrier transport layer 320 may be, for example, an electron transport layer (ETL) or a hole transport layer (HTL), which has the function of facilitating the photoelectric conversion layer 300 to enhance exciton separation and conduct carriers, thereby improving photoelectric conversion. Overall photoelectric conversion of layer 300 rate. Further, the carrier transport layer 320 also has a function as a carrier blocking layer, and can block the carrier from flowing back to the photoelectric conversion layer 300 by the electrode, so that the dark current can be effectively suppressed or the electrode stability can be improved.

In the present embodiment, as shown in FIG. 2B, the top surface of the carrier transport layer 320 is lower than the top surface 200a of the pixel isolation structure 200.

In an embodiment, the material of the carrier transport layer 320 may include, for example, titanium oxide (TiO ₂ ), zinc oxide (ZnO), aluminum oxide (Al ₂ O ₃ ), fullerene derivative (PCBM), poly 3,4- Vinyl dioxythiophene: polystyrene sulfonate (PEDOC: PSS), nickel oxide (NiO) and/or vanadium oxide (V ₂ O ₅ ), PFN, ethoxylated polyethyleneimine (PEIE), polyethylene Imine (PEI), molybdenum trioxide (MoO ₃ ), tungsten trioxide (WO ₃ ), LiF (lithium fluoride), 4,7-diphenyl-1,10-phenanthroline (bphen,bathophenanthroline) or It is 8-hydroxyquinoline aluminum (Alq3).

FIG. 3A is a top view of the image sensor according to still another embodiment of the present disclosure, and FIG. 3B is a cross-sectional view along the section line 3B-3B'. The same or similar components as those of the above-mentioned embodiments are denoted by the same or similar components, and the related descriptions of the same or similar components are referred to the foregoing, and are not described herein again. The difference between this embodiment and the embodiment shown in the above FIG. 2A is mainly that the pixel isolation structure 200 defines a design of a plurality of pixel regions.

As shown in FIGS. 3A-3B, in the image sensor 30, the pixel isolation structure 200 defines a plurality of pixel regions, such as the pixel regions P1 and P2 shown in FIGS. 3A-3B; the photoelectric conversion layer 300 has points. The plurality of photoelectric conversion layer blocks are separated, for example, the photoelectric conversion layer blocks 300-1 and 300-2 as shown in FIGS. 3A to 3B. Each of the photoelectric conversion layer blocks is disposed corresponding to each pixel region. For example, the photoelectric conversion layer block 300-1 is disposed corresponding to the pixel region P1, and the photoelectric conversion layer block 300-2 corresponds to the pixel region. The P2 setting, the photoelectric conversion layer block 300-1 and the photoelectric conversion layer block 300-2 are spaced apart from each other.

As shown in FIGS. 3A-3B, in the image sensor 30, the first electrode 210 is located in the middle of one photoelectric conversion layer block, and the second electrode 220 surrounds each photoelectric conversion layer block and defines respective pixel regions. In the embodiment shown in Fig. 3A, the second electrode 220 completely surrounds one of the photoelectric conversion layer blocks. In some other embodiments, the second electrode 220 may also have a small gap (not shown in the figure). When the photoelectric conversion layer is fabricated by a wet process, the small gap may allow the material of the photoelectric conversion layer to flow to other paintings. At the second electrode 220 of the prime region, a uniform photoelectric conversion layer can be formed in the plurality of pixel regions.

4A is a top view of an image sensor according to still another embodiment of the present disclosure, FIG. 4B is a cross-sectional view along section line 4B-4B′, and FIG. 4C to FIG. 4E are diagrams along a section line. A schematic cross-sectional view of various embodiments of 4B-4B'. The same or similar components as those of the above-mentioned embodiments are denoted by the same or similar components, and the related descriptions of the same or similar components are referred to the foregoing, and are not described herein again. The difference between this embodiment and the embodiment shown in FIGS. 3A-3B is mainly in the design of the pixel isolation structure 200.

As shown in FIGS. 4A-4B , in the image sensor 40 , the pixel isolation structure 200 further includes a plurality of non-conductive layers 230 , and the non-conductive layer 230 is located above the first electrode 210 and the second electrode 220 .

As shown in FIGS. 4A-4B, the top surface 200a of the pixel isolation structure 200 is also the top surface 230a of the non-conductive layers 230. Therefore, the height difference ΔH between the top surface 200a of the pixel isolation structure 200 and the top surface 300a of the photoelectric conversion layer 300 is also the top surface 230a of the non-conductive layer 230 and the top surface of the photoelectric conversion layer 300. The height difference of the face 300a. As in the embodiment shown in FIGS. 4A-4B, the non-conductive layer 230 is located above the first electrode 210 and the second electrode 220. In the embodiment, the material of the non-conductive layer 230 is, for example, tantalum nitride or tantalum oxide, and the photoelectric conversion layer 300 is located between the two non-conductive layers 230.

As in the embodiment shown in FIG. 4B, the sidewalls of the non-conductive layer 230 of the image sensor 40 are substantially aligned with the sides of the first electrode 210 and the second electrode 220.

Please refer to pictures 4C to 4E. As in the embodiment shown in FIG. 4C, the non-conductive layer 230 of the image sensor 40-1 substantially covers the first electrode 210 and the second electrode 220. In the embodiment shown in FIG. 4D, the non-conductive layer 230 of the image sensor 40-2 is located on a portion of the top surface of the first electrode 210 and the second electrode 220, and partially exposes the first electrode 210 and the The top surface of the two electrodes 220. In the embodiment shown in FIG. 4E, the non-conductive layer 230 of the image sensor 40-3 covers the first electrode 210 and the second electrode 220 and extends between the first electrode 210 and the second electrode 220, and The photoelectric conversion layer 300 is located on the non-conductive layer 230 between the first electrode 210 and the second electrode 220.

FIG. 5 is a schematic diagram of an image sensor according to a further embodiment of the disclosure. The same or similar components as those of the above-mentioned embodiments are denoted by the same or similar components, and the related descriptions of the same or similar components are referred to the foregoing, and are not described herein again.

As shown in FIG. 5, in the image sensor 50, the top surface 300a of the photoelectric conversion layer 300 is higher than the top surfaces of the first electrode 210 and the second electrode 220. In other words, the photoelectric conversion layer 300 of the image sensor 50 is located between the two non-conductive layers 230 , and the non-conductive layer 230 is located between the first electrode 210 and the second electrode 220 .

In an embodiment, the image sensor 50 further includes a 矽 substrate 110, painted The pixel sensing circuit 100 is located on the germanium substrate 110. The pixel sensing circuit 100 may include, for example, an electronic component 120, a metal layer M1 Mn, a connection post S, an amplifier, etc., for example, the electronic component 120 may be, for example, a transistor of a read circuit, a metal layer M1~ The Mn may include, for example, an electronic component such as a capacitor, and the connection post S is used as, for example, a signal channel, but is not limited thereto. In an embodiment, the first electrode 210 and the second electrode 220 are electrically connected to the pixel sensing circuit 100 via a via, for example, the first electrode 210 and the second electrode 220 are respectively connected via the connecting column V1 and V2 is electrically connected to the metal layer Mn of the pixel sensing circuit 100. In an embodiment, the pixel isolation structure 200 may further include a non-conductive layer 240 on the non-conductive layer 240, and the non-conductive layer 240 is made of, for example, a dielectric material (for example, a hafnium oxide layer) instead of The conductive layer 230 as a protective layer is, for example, a tantalum nitride layer.

In the embodiments described in the above FIGS. 3A to 5, the uppermost metal layer in the semiconductor process is used as the first electrode 210 and the second electrode 220 (pixel electrode).

FIG. 6 is a schematic diagram of an image sensor according to still another embodiment of the present disclosure. The same or similar components as those of the above-mentioned embodiments are denoted by the same or similar components, and the related descriptions of the same or similar components are referred to the foregoing, and are not described herein again. In this embodiment, the second metal layer from top to bottom in the semiconductor process is used as the first electrode 210 and the second electrode 220 (pixel electrodes).

As shown in FIG. 6 , in the image sensor 60 , the pixel isolation structure 200 further includes a plurality of metal layers 250 , and the metal layer 250 is located above the first electrode 210 and the second electrode 220 . As shown in FIG. 6, the top surface 200a of the pixel isolation structure 200 is also the top surface 250a of the metal layers 250. Therefore, the height difference ΔH between the top surface 200a of the pixel isolation structure 200 and the top surface 300a of the photoelectric conversion layer 300 is also the top surface 250a of the metal layer 250 and the top surface of the photoelectric conversion layer 300. The height of the surface 300a is different, and the metal layer 250 is electrically insulated from the first electrode 210 and the second electrode 220. As in the embodiment shown in FIG. 6, the top surface 300a of the photoelectric conversion layer 300 is higher than the top surfaces of the first electrode 210 and the second electrode 220.

In some embodiments, the metal layer 250 is disposed on the non-conductive layer 240, and thus the metal layer 250 and the non-conductive layer 240 constitute the pixel isolation structure 200.

FIG. 7 is a top view of an image sensor according to still another embodiment of the present disclosure. The same or similar components as those of the above-mentioned embodiments are denoted by the same or similar components, and the related descriptions of the same or similar components are referred to the foregoing, and are not described herein again. The difference between this embodiment and the foregoing embodiment is mainly in the design of the configuration of the first electrode 210 and the second electrode 220.

As shown in FIG. 7, in the image sensor 70, the second electrode 220 defines a plurality of pixel regions P1 to P4, and the photoelectric conversion layer blocks 300-1, 300-2, 300-3, and 300-4 correspond to each other. The pixel regions P1, P2, P3, and P4 are disposed, and the photoelectric conversion layer blocks 300-1, 300-2, 300-3, and 300-4 are spaced apart from each other. Each pixel area is substantially rectangular.

FIG. 8 is a top view of an image sensor according to still another embodiment of the present disclosure. The same or similar components as those of the above-mentioned embodiments are denoted by the same or similar components, and the related descriptions of the same or similar components are referred to the foregoing, and are not described herein again. The difference between this embodiment and the foregoing embodiment is mainly in the design of the configuration of the first electrode 210 and the second electrode 220.

As shown in FIG. 8, in the image sensor 80, the second electrode 220 defines a plurality of pixel regions P1 to P5, and the photoelectric conversion layer blocks 300-1, 300-2, 300-3, 300-4, and 300. -5 corresponding to the pixel regions P1, P2, P3, P4, and P5, respectively, and the photoelectric conversion layer blocks 300-1, 300-2, 300-3, 300-4, and 300-5 are spaced apart from each other Come. Each pixel area is substantially hexagonal.

In some other embodiments, in the structure shown in FIGS. 7-8, the second electrode 220 may also have a small gap (not shown in the figure), so that between the plurality of pixel regions P1, P2, P3, ... The photoelectric conversion layer blocks may be in communication with each other, and the small gaps may allow the material of the photoelectric conversion layer to flow between the plurality of pixel regions, and may form equal height photoelectric conversion layers in the plurality of pixel regions.

FIG. 9 is a top view of an image sensor according to still another embodiment of the present disclosure. The same or similar components as those of the above-mentioned embodiments are denoted by the same or similar components, and the related descriptions of the same or similar components are referred to the foregoing, and are not described herein again. The difference between this embodiment and the foregoing embodiment is mainly in the design of the configuration of the first electrode 210, the second electrode 220, and the non-conductive layer 230.

As shown in Fig. 9, the image sensor 90 is a 4x2 pixel area array. The first electrode 210 and the second electrode 220 are strip electrodes arranged in parallel. In this embodiment, the pixel isolation structure 200 defines eight pixel regions P1, P2, P3, P4, P5, P6, P7, and P8. In each of the pixel regions, the plurality of first electrodes 210 are electrically connected to each other via the plurality of connection pillars C1 and the metal layer Mn, and the plurality of second electrodes 220 are electrically connected to each other via the plurality of connection pillars C2 and the metal layer Mn. For example, the pixel sensing circuit 100 may include a plurality of metal layers, and a metal layer of the metal layer separated from the pixel electrode by the shortest distance passes through the connection pillar and the pixel electrode (for example, the first electrode 210). The electrical connection is made, and the metal layer separated from the pixel electrode by the shortest distance in the metal layer is electrically connected to the pixel electrode (for example, the second electrode 220) through the connection pillar. The photoelectric conversion layer 300 has eight photoelectric conversion layer blocks corresponding to the eight pixel regions P1 to P8.

FIG. 9A is a top view of an image sensor according to still another implementation of the disclosure. The same or similar component of the embodiment as in the previous embodiment For the same or similar components, the related descriptions of the same or similar components are referred to the foregoing, and are not described herein again. The difference between this embodiment and the foregoing embodiment is mainly in the design of the configuration of the first electrode 210 and the second electrode 220.

In some embodiments, one of the first electrode 210 and the second electrode 220 surrounds the other of the first electrode 210 and the second electrode 220. As shown in FIG. 9A, in the image sensor 90-1, the second electrode 220 defines a plurality of pixel regions P1 to P2, and the photoelectric conversion layer blocks 300-1 and 300-2 correspond to the pixel regions P1 and P2, respectively. It is provided that the photoelectric conversion layer blocks 300-1 and 300-2 are spaced apart from each other.

In the embodiment, as shown in FIG. 9A, the second electrode 220 surrounds the first electrode 210, and thus the adjacent pixel regions are adjacent to each other with the second electrode 220. The second electrode 220 surrounds a single pixel region, so that the signal in a single pixel region remains in the pixel region without crosstalk to another adjacent pixel region, and the effect is affected. Go to the pixel area next door. For example, the second electrode 220 surrounds the pixel region P1 such that the photocurrent generated by the pixel region P1 due to illumination is confined in the pixel region P1 and does not crosstalk to the adjacent pixel region P2.

10A to 10D are schematic views showing a manufacturing method of an image sensor (such as the image sensor 20-1 shown in FIG. 2A) according to an embodiment of the present invention. Hereinafter, a method of manufacturing an image sensor according to an embodiment of the present invention will be described with reference to FIGS. 2A and 10A to 10D. The same or similar components as those of the above-mentioned embodiments are denoted by the same or similar components, and the related descriptions of the same or similar components are referred to the foregoing, and are not described herein again.

As shown in FIG. 10A, first, a germanium substrate and a pixel sensing circuit 100 thereon are provided.

Next, as shown in Figure 10B, set the pixel electrode and pixel isolation Structure 200 is on pixel sensing circuit 100. As shown in FIG. 10B, the pixel electrode includes a first electrode 210 and a second electrode 220 electrically connected to the pixel sensing circuit 100. In the embodiment, the first electrode 210 and the second electrode 220 are formed on the pixel sensing circuit 100 in a single process, so that the first electrode 210 and the second electrode 220 can be fabricated in the same process, which is simplified. The advantages of the process.

Then, as shown in FIG. 10C, the photoelectric conversion layer 300 is disposed on the pixel sensing circuit 100, and the top surface 300a of the photoelectric conversion layer 300 is lower than the top surface 200a of the pixel isolation structure 200. In the embodiment, the photoelectric conversion layer 300 is formed on the pixel sensing circuit 100 by a coating or evaporation process. Because of the design of the height difference ΔH between the top surface 200a and the top surface 300a, the photoelectric conversion layer 300 is completely isolated by the pixel isolation structure 200 in one pixel, so that adjacent pixels do not occur. The photoelectric conversion layer 300 has a problem of cross talk.

Next, as shown in FIG. 10D, a water oxygen protective layer 400 is formed. The water oxygen protective layer 400 covers the pixel sensing circuit 100, the pixel isolation structure 200, and the photoelectric conversion layer 300. So far, the image sensor 20-1 shown in Fig. 10D (Fig. 2A) is completed.

Hereinafter, the manufacturing method of the image sensors 20-2 to 90 shown in FIGS. 2B to 9 will be respectively described according to the manufacturing method of the image sensor 20-1 of the foregoing embodiment.

The manufacturing method of the image sensor 20-2 as shown in FIG. 2B differs from the foregoing embodiment mainly in the design of the photoelectric conversion layer 300. In this embodiment, before the photosensitive layer 310 is formed, the carrier transport layer 320 is formed on the pixel isolation structure 200, and then the photosensitive layer 310 is formed on the carrier transport layer 320 to form the photoelectric conversion layer 300.

11A-11C are schematic diagrams showing a method of manufacturing an image sensor (such as the image sensor 30 shown in FIGS. 3A-3B) according to another embodiment of the present invention. The difference between the manufacturing method of the image sensor 30 shown in FIGS. 3A to 3B and the embodiment shown in FIG. 2A is mainly that the pixel isolation structure 200 to be fabricated has a different structure. In other words, when the patterning process of the pixel isolation structure 200 is performed, the pattern of the pixel isolation structure 200 predetermined by the image sensor 30 is selected.

In detail, as shown in FIG. 11A, the germanium substrate and the pixel sensing circuit 100 thereon are provided; then, as shown in FIG. 11B, the pixel isolation structure 200 is disposed on the pixel sensing circuit 100. The pixel isolation structure 200 of the image sensor 30 defines a plurality of pixel regions, such as pixel regions P1 and P2.

Next, as shown in FIG. 11C, the photoelectric conversion layer 300 is formed on the pixel sensing circuit 100 by a coating or vapor deposition process. Because of the design of the height difference ΔH between the top surface 200a and the top surface 300a, the completed photoelectric conversion layer 300 is naturally isolated by the pixel isolation structure 200, and is separated in a plurality of pixel regions. Since a plurality of photoelectric conversion layer blocks are generated, the problem of cross talk of the photoelectric conversion layer 300 (multiple photoelectric conversion layer blocks) in adjacent pixels does not occur. Thus far, the image sensor 30 shown in Fig. 11C (Figs. 3A to 3B) is completed.

The difference between the manufacturing method of the image sensor 40 shown in FIGS. 4A to 4B and the embodiment shown in the above-mentioned 3A to 3B is mainly that the pixel isolation structure 200 to be fabricated has a different structure. In other words, when the patterning process of the pixel isolation structure 200 is performed, the pattern of the first electrode 210 and the second electrode 220 predetermined by the image sensor 40 is selected, and then the non-conductive layer 230 is formed. Above the electrode 210 and the second electrode 220.

In this embodiment, the first electrode 210 and the second electrode 220 are formed on the pixel sensing circuit 100 in a single process, and then the non-conductive layer 230 is formed on the first electrode 210 and the second electrode 220. As shown in Figures 4A-4B.

The manufacturing method of the image sensor 50 shown in FIG. 5 differs from the embodiment shown in the above-mentioned 3A to 3B mainly in the produced photoelectric conversion layer 300. The coating or vapor-deposited photoelectric conversion layer 300 of this embodiment has a higher top surface 300a.

Moreover, in this embodiment, the connection pillars V1 and V2 may be formed on the pixel sensing circuit 100, and then the first electrode 210 and the second electrode 220 may be fabricated on the connection columns V1 and V2.

The method of manufacturing the image sensor 60 as shown in FIG. 6 differs from the embodiment shown in FIG. 5 mainly in that the pixel isolation structure 200 is formed to have a different structure. In other words, when the patterning process of the pixel isolation structure 200 is performed, the pattern of the first electrode 210 and the second electrode 220 predetermined by the image sensor 60 is selected, and then the metal layer 250 is formed. Above the electrode 210 and the second electrode 220.

In detail, in this embodiment, the first electrode 210 and the second electrode 220 and the non-conductive layer 240 are formed on the pixel sensing circuit 100 in a single evaporation process, and then the metal layer 250 is formed on the non-conductive layer 240. .

The manufacturing method of the image sensors 70 and 80 as shown in FIGS. 7 to 8 differs from the foregoing embodiment mainly in that the fabricated first electrode 210 and second electrode 220 have different structures. In other words, when the patterning process of the pixel isolation structure 200 is performed, the patterns of the first electrode 210 and the second electrode 220 predetermined by the image sensors 70 and 80 are selected.

The manufacturing method of the image sensor 90 as shown in FIG. 9 differs from the foregoing embodiment mainly in that the fabricated first electrode 210, second electrode 220, and non-conductive layer 230 have different structures. In other words, when the patterning process of the pixel isolation structure 200 is performed, the pattern of the first electrode 210 and the second electrode 220 predetermined by the image sensor 90 is selected, and then the non-conductive layer 230 is formed. An electrode 210 and a second electrode 220 are disposed above.

FIG. 12 is a cross-sectional view showing an image sensor according to still another embodiment of the present disclosure. 12A to 12B are cross-sectional views showing an image sensor of still further embodiments of the present disclosure. The same or similar components as those of the above-mentioned embodiments are denoted by the same or similar components, and the related descriptions of the same or similar components are referred to the foregoing, and are not described herein again.

As shown in FIG. 12, the image sensor 1200 includes a pixel sensing circuit 100, a pixel electrode, and a photoelectric conversion layer 300. The pixel sensing circuit 100 corresponds to a plurality of pixel regions, such as pixel regions P1 and P2. The pixel electrode is disposed on the pixel sensing circuit 100. The pixel electrode includes a first electrode 210 and a second electrode 220 and is electrically connected to the pixel sensing circuit 100. The first electrode 210 and the second electrode 200 are coplanar, and the first electrode 210 and the second electrode 220 have different polarities. The photoelectric conversion layer 300 is disposed on the pixel sensing circuit 100, and the photoelectric conversion layer 300 has a plurality of photoelectric conversion layer blocks, for example, photoelectric conversion layer blocks 300-1 and 300-2. Each of the photoelectric conversion layer blocks respectively corresponds to each of the pixel regions, and the photoelectric conversion layer blocks are separated from each other by a pixel isolation trench 300T.

In the embodiment, each of the photoelectric conversion layer blocks is separated by a pixel isolation trench 300T in one pixel region, so that crosstalk of the photoelectric conversion layer 300 (photoelectric conversion layer block) in the adjacent pixel regions can be avoided. (cross talk) issue. For example In other words, the photoelectric conversion layer block 300-1 corresponds to the pixel area P1, the photoelectric conversion layer block 300-2 corresponds to the pixel area P2, and the photoelectric conversion layer block 300-1 and the photoelectric conversion layer block 300-2 They are separated from each other by a pixel isolation trench 300T.

In the embodiment, as shown in Fig. 12, the respective photoelectric conversion layer blocks 300-1, 300-2 are located between the first electrode 210 and the second electrode 220 in the respective pixel regions P1, P2, respectively.

In an embodiment, the photoelectric conversion layer 300 may include a quantum dot material, a single crystal perovskite structure methyl ammonium iodide material, a polycrystalline perovskite structure methyl ammonium iodide material, an amorphous phase perovskite. The structure is a methyl ammonium iodide lead material or a single crystal, polycrystalline or amorphous phase perovskite structure methyl ammonium chloroiodide material, but is not limited thereto.

In the embodiment shown in FIG. 12, the sidewalls of the pixel isolation trench 300T of the image sensor 1200 are substantially aligned with the sides of the first electrode 210 and the second electrode 220.

In the embodiment shown in FIG. 12A, each of the photoelectric conversion layer blocks 300-1 and 300-2 of the image sensor 1200-1 covers the first electrode 210 and the first of the corresponding pixel regions P1 and P2. Two electrodes 220.

In the embodiment shown in FIG. 12B, the pixel isolation trench 300T of the image sensor 1200-2 exposes a portion of the first electrode 210 and a portion of the second electrode 220. For example, as shown in FIG. 12B, the photoelectric conversion layer block 300-1/300-2 corresponding to the pixel region P1/P2 covers some of the first electrode 210 and the second electrode 220 to expose the pixel region P1/ A portion of the second electrode 220 at the edge of P2.

13A to 13F are schematic views showing a manufacturing method of an image sensor (such as the image sensor 1200 shown in FIG. 12) according to still another embodiment of the present invention. The following is described with reference to FIG. 12 and FIG. 13A to FIG. 13F. A method of fabricating an image sensor according to an embodiment of the present invention. The same or similar components as those of the above-mentioned embodiments are denoted by the same or similar components, and the related descriptions of the same or similar components are referred to the foregoing, and are not described herein again.

As shown in FIG. 13A, a pixel sensing circuit 100 is provided. The pixel sensing circuit 100 corresponds to a plurality of pixel regions. Next, as shown in FIG. 13A, a pixel electrode is disposed on the pixel sensing circuit 100. on. As shown in FIG. 13A, the pixel electrode includes a first electrode 210 and a second electrode 220 and is electrically connected to the pixel sensing circuit 100, wherein the first electrode 210 and the second electrode 220 are coplanar, and The first electrode 210 and the second electrode 220 have different polarities.

Next, as shown in FIGS. 13B-13F, a photoelectric conversion layer 300 is disposed on the pixel sensing circuit 100, and the photoelectric conversion layer 300 has a plurality of photoelectric conversion layer blocks, and each photoelectric conversion layer block corresponds to each The pixel regions, and the photoelectric conversion layer blocks are separated from each other by a pixel isolation trench 300T. The method of manufacturing the photoelectric conversion layer 300 includes, for example, the following steps.

As shown in FIG. 13B, a patterned photoresist layer PR is formed on the pixel sensing circuit 100. In an embodiment, the pattern of the patterned photoresist layer PR corresponds to the configuration of the pixel region.

As shown in FIG. 13C, a first photoelectric conversion material precursor material 330 is formed on the structures of the first electrode 210 and the second electrode 220 and the patterned photoresist layer PR. In the embodiment, the photoelectric conversion material first precursor material 330 is formed on the first electrode 210 and the second electrode 220 in a comprehensive manner and covers the structures of the first electrode 210 and the second electrode 220 and the patterned photoresist layer PR. In an embodiment, the photoelectric conversion material first precursor material 330 is, for example, an inorganic material. In one embodiment, the first precursor material 330 of the photoelectric conversion material is, for example, lead iodide (PbI ₂ ).

As shown in FIG. 13D, the first precursor material 330 of the photoelectric conversion material is partially removed to form a plurality of first material portions, wherein each of the first material portions corresponds to each of the pixel regions. For example, a portion of the photoelectric conversion material first precursor material 330 is removed to form first material portions 330-1 and 330-2, the first material portion 330-1 corresponding to the pixel region P1, and the first material portion 330-2 corresponding Pixel area P2. In an embodiment, for example, a lift-off process may be performed to remove the patterned photoresist layer PR and a portion of the photoelectric conversion material first precursor material 330 on the patterned photoresist layer PR.

As shown in Fig. 13E, a photoelectric conversion material second precursor 340 is provided to react with the first material portion. In an embodiment, the photoelectric conversion material second precursor material 340 is, for example, a gaseous compound. In one embodiment, the second conversion material 340 of the photoelectric conversion material is, for example, methyl ammonium iodide.

Next, as shown in FIG. 13F, the photoelectric conversion material second precursor material 340 is reacted with the first material portion to form the photoelectric conversion layer 300. Since the photoelectric conversion material second precursor material 340 only reacts with the photoelectric conversion material first precursor material 330, the configuration of the patterned plurality of first material portions can be maintained, so that the photoelectric conversion material second precursor material The photoelectric conversion layer 300 formed after the reaction of 340 with the first material portion may have a predetermined pattern. The photoelectric conversion layer 300 formed after the reaction may include a quantum dot material, a single crystal perovskite structure methylammonium iodide material, a polycrystalline perovskite structure methylammonium iodide material, an amorphous phase perovskite. The structure is a methyl ammonium iodide lead material or a single crystal, polycrystalline or amorphous phase perovskite structure methyl ammonium chloroiodide material, but is not limited thereto. Next, an image sensor 1200 as shown in Fig. 12 is formed.

In summary, although the invention has been disclosed above in various embodiments, It is not intended to limit the invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

Claims (27)

An image sensor includes: a pixel sensing circuit corresponding to at least one adjacent first pixel region and a second pixel region; a pixel electrode disposed on the pixel sensing circuit, The pixel electrode corresponds to the first pixel region and the second pixel region, the pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit, wherein the first electrode is The second electrode is coplanar, the first electrode and the second electrode have different polarities, and the first electrode or the second electrode located in the first pixel region is adjacent to the second pixel The first electrode or the second electrode having the same polarity in the region, the first pixel region and the first electrode adjacent to the second pixel region and having the same polarity or the second electrodes are connected to each other Separating and separating; and a photoelectric conversion layer disposed on the pixel sensing circuit and the pixel electrode, wherein the photoelectric conversion layer comprises a photosensitive layer and a carrier transport layer, wherein the photosensitive layer is located in the carrier transmission On the layer, the carrier transport layer is located between the photosensitive layer and the pixel electrode. The image sensor of claim 1, wherein the material of the carrier transport layer comprises titanium oxide (TiO ₂ ), zinc oxide (ZnO), aluminum oxide (Al ₂ O ₃ ), and fullerene derivative. (PCBM), poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOC:PSS), nickel oxide (NiO) and/or vanadium oxide (V ₂ O ₅ ), PFN, ethoxylate Polyethyleneimine (PEIE), polyethyleneimine (PEI), molybdenum trioxide (MoO ₃ ), tungsten trioxide (WO ₃ ), LiF (lithium fluoride), 4,7-diphenyl-1,10 - phenanthroline (bphen, bathohhenanthroline) or 8-hydroxyquinoline aluminum (Alq3). The image sensor of claim 1, wherein the material of the first electrode is different from the material of the second electrode. The image sensor of claim 3, wherein the material of the first electrode and the material of the second electrode respectively comprise a metal compatible with the semiconductor process. The image sensor of claim 4, wherein the material of the first electrode and the material of the second electrode comprise aluminum, gold, silver, titanium, nickel, copper, tantalum, tungsten, titanium nitride, respectively. (TiN) and/or aluminum coated with titanium nitride. The image sensor of claim 1, wherein the photoelectric conversion layer further comprises a modifying layer on the photosensitive layer to reduce defects on a surface or a crystal gap of the photosensitive layer, the modifying layer The material is a fullerene derivative (PCBM) or other material that reduces the levitation bond. The image sensor of claim 1, wherein the carrier transport layer and the pixel electrode form an energy barrier greater than an operating voltage of the image sensor. An image sensor includes: a pixel sensing circuit; a pixel isolation structure disposed on the pixel sensing circuit and defining a plurality of pixel regions; a pixel electrode is disposed on the pixel sensing circuit, the pixel electrode includes a plurality of first electrodes and a plurality of second electrodes, and the first electrodes and the second electrodes are electrically connected to the picture a sensing circuit, wherein the first electrodes and the second electrodes are coplanar with each other, and adjacent one of the first pixel regions and the second pixel region of the pixel regions have the same polarity The first electrodes or the second electrodes are adjacent to each other and separated from each other; and a photoelectric conversion layer is disposed on the pixel sensing circuit, wherein the photoelectric conversion layer is located in the pixel isolation structure, And a top surface of the photoelectric conversion layer is lower than a top surface of the pixel isolation structure. The image sensor of claim 8, wherein a height difference between the top surface of the photoelectric conversion layer and the top surface of the pixel isolation structure is greater than zero. The image sensor of claim 8, wherein the pixel isolation structure further comprises a plurality of non-conductive layers on the first electrode and the second electrodes, the pixel isolation structure The top surface is a plurality of top surfaces of the non-conductive layers. The image sensor of claim 8, wherein the pixel isolation structure further comprises a plurality of non-conductive layers between the first electrodes and the second electrodes, the pixel isolation structure The top surface is a plurality of top surfaces of the non-conductive layers. The image sensor of claim 8, wherein the pixel isolation structure further comprises a plurality of metal layers, the metal layers being the first electrodes of the pixel electrodes or the second The electrode, the top surface of the pixel isolation structure is a plurality of top surfaces of the metal layers. The image sensor of claim 8, wherein the pixel isolation structure further comprises a plurality of metal layers and a plurality of non-conductive layers, wherein the metal layers are disposed on the non-conductive layers, the pixels The top surface of the isolation structure is a plurality of top surfaces of the metal layers. The image sensor of claim 8, wherein the photoelectric conversion layer has a plurality of photoelectric conversion layer blocks separated, and each of the photoelectric conversion layer blocks is disposed corresponding to each of the pixel regions. The image sensor of claim 8, wherein the photoelectric conversion layer comprises at least one of an organic material and an inorganic organic composite material. The image sensor of claim 15, wherein the photoelectric conversion layer comprises a quantum dot material, a single crystal perovskite structure methyl ammonium lead iodide perovskite material. , polycrystalline perovskite structure methyl ammonium lead iodide material, amorphous phase perovskite structure methyl ammonium iodide lead material or perovskite structure methyl ammonium lead iodide chloride Perovskite) material. The image sensor of claim 8, wherein the photoelectric conversion layer comprises a photosensitive layer and a carrier transport layer, the carrier transport layer being disposed between the pixel electrode and the photosensitive layer. The image sensor of claim 8, wherein the pixel sensing circuit comprises a plurality of metal layers, and the first electrodes in each of the pixel regions are connected to the first plurality of first pillars Electrically connecting a metal layer separated from the pixel electrode by a shortest distance in the metal layer, and the second electrodes in each of the pixel regions are neutralized with the metal layers via a plurality of second connecting columns The pixel electrodes are electrically connected to each other by the metal layer of the shortest distance. The image sensor of claim 8, wherein one of the first electrode and the second electrode surrounds the other of the first electrode and the second electrode. An image sensor includes: a pixel sensing circuit corresponding to a plurality of pixel regions; a pixel electrode disposed on the pixel sensing circuit, the pixel electrode comprising a plurality of first electrodes and a plurality of pixels The second electrode is electrically connected to the pixel sensing circuit, wherein the first electrodes and the second electrodes are coplanar, the first electrodes and the second electrodes have different polarities, and the The first electrodes of the first pixel region and the second pixel regions of the second pixel region having the same polarity and the second electrodes are adjacent to each other and separated from each other; and a photoelectric conversion layer And disposed on the pixel sensing circuit, and the photoelectric conversion layer has a plurality of photoelectric conversion layer blocks, and each of the photoelectric conversion layer blocks respectively correspond to Up to each of the pixel regions, and the photoelectric conversion layer blocks are separated from each other by a pixel isolation trench. The image sensor of claim 20, wherein the photoelectric conversion layer is located on the pixel electrode, and a top surface of the photoelectric conversion layer is higher than a top surface of the pixel electrode. The image sensor according to claim 20, wherein the photoelectric conversion layer comprises a quantum dot material, a single crystal perovskite structure methyl ammonium iodide material, and a polycrystalline perovskite structure methyl ammonium. Lead iodide material, amorphous phase perovskite structure methyl ammonium iodide lead material or perovskite structure methyl ammonium chloride lead iodide material. A method for manufacturing an image sensor, comprising: providing a pixel sensing circuit corresponding to a plurality of pixel regions; and providing a pixel electrode on the pixel sensing circuit, the pixel electrode comprising a plurality of first electrodes And the plurality of second electrodes are electrically connected to the pixel sensing circuit, wherein the first electrodes and the second electrodes are coplanar, and the first electrodes and the second electrodes have different polarities, And the first first pixel regions and the second pixels having the same polarity in the adjacent pixel regions are adjacent to each other and separated from each other; and the setting a photoelectric conversion layer is disposed on the pixel sensing circuit, and the photoelectric conversion layer has a plurality of photoelectric conversion layer blocks, each of the photoelectric conversion layer blocks respectively corresponding to each of the pixel regions, and the photoelectric conversion The layer blocks are separated from each other by a pixel isolation trench. The method for manufacturing an image sensor according to claim 23, wherein the photoelectric conversion layer is disposed on the pixel sensing circuit, comprising: forming a photoelectric conversion material first precursor material on the first electrodes And the second electrode and the patterned photoresist; partially removing the photoelectric conversion material first precursor material to form a plurality of first material portions, wherein each of the first material portions corresponds to each of the plurality a pixel region; and providing a photoelectric conversion material second precursor material to react with the first material portions to form the photoelectric conversion layer. The method of manufacturing the image sensor of claim 24, wherein removing a portion of the first precursor material of the photoelectric conversion material comprises: forming a patterned photoresist layer on the pixel sensing circuit, wherein The patterned photoresist layer is disposed over the pixel sensing circuit and the first precursor material of the photoelectric conversion material; and performing a lift-off process to remove the patterned photoresist layer and portions The first precursor material of the photoelectric conversion material. The method of manufacturing an image sensor according to claim 24, wherein the second precursor material of the photoelectric conversion material is a gas compound. The method for manufacturing an image sensor according to claim 23, wherein the photoelectric conversion layer comprises a quantum dot material, a single crystal perovskite structure methylammonium iodide material, and a polycrystalline perovskite structure. Methylammonium iodide material, amorphous phase calcium Titanium-type structure methyl ammonium iodide lead material or perovskite structure methyl ammonium chloride lead iodide material.