TWI644983B - Thermosetting vinyl organic enamel resin composition and application thereof in high frequency circuit board - Google Patents
Thermosetting vinyl organic enamel resin composition and application thereof in high frequency circuit board Download PDFInfo
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- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
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Abstract
本發明關於一種熱固性乙烯基有機矽樹脂組合物,前述樹脂組合物包含:由線性乙烯基有機矽樹脂、環形乙烯基有機矽樹脂、三維無規網狀結構MQ乙烯基有機矽樹脂中的任意一種或至少兩種組合而成的乙烯基有機矽樹脂;乙烯基改性聚苯醚樹脂;以及自由基引發劑。本發明還提供了採用如上所述樹脂組合物製備的高頻電路基板及其應用。本發明所述高頻電路基板具有低介質常數、低介質損耗、低吸水率,且層間黏合力能夠滿足覆銅板層間黏合力的要求,同時能夠實現無鹵無磷V-0級阻燃。 The present invention relates to a thermosetting vinyl organic tantalum resin composition comprising: any one of a linear vinyl organic tantalum resin, a cyclic vinyl organic tantalum resin, and a three-dimensional random network structure MQ vinyl organic tantalum resin. Or a combination of at least two vinyl organic oxime resins; a vinyl modified polyphenylene ether resin; and a free radical initiator. The present invention also provides a high frequency circuit substrate prepared using the resin composition as described above and an application thereof. The high-frequency circuit substrate of the invention has low dielectric constant, low dielectric loss, low water absorption, and the interlayer adhesion can meet the requirements of the adhesion between the layers of the copper-clad layer, and can realize the halogen-free and phosphorus-free V-0 flame retardant.
Description
本發明關於一種乙烯基有機矽樹脂的組合物,具體而言,本發明關於一種熱固性乙烯基有機矽樹脂組合物及其在高頻電路基板中的應用。 The present invention relates to a composition of a vinyl organic oxime resin, and more particularly to a thermosetting vinyl phthalocyanine resin composition and its use in a high frequency circuit substrate.
近年來,隨著無線通訊技術、電子產品的迅速發展,電子電路步入資訊處理高速化、訊號傳輸高頻化階段,然而當頻率大於300MHz,甚至達到GHz以上時,基板的電性能將嚴重影響電子電路的特徵,因而對基板性能提出更高的要求。 In recent years, with the rapid development of wireless communication technology and electronic products, electronic circuits have entered the stage of high-speed information processing and high-frequency signal transmission. However, when the frequency is greater than 300MHz or even above GHz, the electrical performance of the substrate will be seriously affected. The characteristics of electronic circuits thus place higher demands on substrate performance.
就介質常數性能而言,在高頻電路中,訊號的傳輸速率與絕緣材料介質常數Dk的關係為:絕緣材料介質常數Dk越低,訊號傳輸速率越快。因此要實現訊號傳輸速率的高速化,必須開發低介質常數的基板。隨著訊號頻率的高速化,基板中訊號的損耗不能再忽略不計。訊號損耗與頻率、介質常數Dk、介質損耗Df的關係為:基板介質常數Dk越小、介質損耗Df越小,訊號損失就越小。因此開發具有低的介質常數Dk及低的介質損耗Df的高頻電路基板,成為CCL廠家共同關注的研發方向。 For dielectric constant on performance, high-frequency circuits, signal transmission rate and the relationship between the insulating material is a dielectric constant D k: the lower the dielectric constant D k dielectric material, the faster the rate of signal transmission. Therefore, in order to speed up the signal transmission rate, it is necessary to develop a substrate having a low dielectric constant. As the frequency of the signal increases, the loss of the signal in the substrate can no longer be ignored. The relationship between the signal loss and the frequency, the dielectric constant D k , and the dielectric loss D f is such that the smaller the substrate dielectric constant D k is, the smaller the dielectric loss D f is, and the smaller the signal loss is. Therefore, the development of a high-frequency circuit substrate having a low dielectric constant D k and a low dielectric loss D f has become a research and development direction common to CCL manufacturers.
目前,高頻電子電路基材採用的烯烴樹脂主要為聚丁二烯樹脂、丁苯共聚物等。採用該樹脂體系,所製備的基材雖然介質常數及介 質損耗低,但這類樹脂在熱氧環境中熱分解溫度低,易被熱氧老化,存在基材的介質常數及介質損耗隨著熱氧老化程度的加深而升高的問題。 At present, the olefin resin used in the high-frequency electronic circuit substrate is mainly a polybutadiene resin, a styrene-butadiene copolymer or the like. Using the resin system, the prepared substrate has a dielectric constant and The mass loss is low, but such a resin has a low thermal decomposition temperature in a hot oxygen environment, is easily aging by thermal oxygen, and has a problem that the dielectric constant of the substrate and the dielectric loss increase as the degree of thermal oxygen aging increases.
乙烯基有機矽樹脂不含極性基團,賦予了該種樹脂優異的低介質常數、低介質損耗、低吸水率性能。乙烯基有機矽樹脂主鏈以Si-O-Si為主鏈,熱分解溫度高,賦予了該種樹脂優異的抗熱氧老化性能,從而保證了採用該種樹脂製備的基材具有長期的介質常數及介質損耗穩定性。 The vinyl organic oxime resin does not contain a polar group, and imparts excellent low dielectric constant, low dielectric loss, and low water absorption performance to the resin. The main chain of vinyl organic bismuth resin is Si-O-Si as the main chain, and the thermal decomposition temperature is high, which gives the resin excellent thermal and aging resistance, thus ensuring the long-term medium of the substrate prepared by using the resin. Constant and dielectric loss stability.
CN105086417A公開了一種樹脂組合物,以乙烯基改性聚苯醚樹脂為主體樹脂,乙烯基MQ樹脂為交聯劑。以乙烯基改性聚苯醚樹脂的重量為100份計,乙烯基MQ樹脂為10-100重量份,所製備的基材具有低介質常數、低介質損耗、高玻璃化轉變溫度、高耐熱性、低吸水率等綜合性能。 CN105086417A discloses a resin composition comprising a vinyl-modified polyphenylene ether resin as a host resin and a vinyl MQ resin as a crosslinking agent. The vinyl MQ resin is 10-100 parts by weight based on 100 parts by weight of the vinyl modified polyphenylene ether resin, and the prepared substrate has low dielectric constant, low dielectric loss, high glass transition temperature, and high heat resistance. , comprehensive performance such as low water absorption.
CN102993683A公開了一種樹脂組合物,以乙烯基改性聚苯醚樹脂為主體樹脂,線性乙烯基樹脂或環形乙烯基樹脂為交聯劑。以乙烯基改性聚苯醚樹脂的重量為100份計,線性乙烯基樹脂或環形乙烯基樹脂為10-90重量份,所製備的基材具有低介質常數、低介質損耗、高玻璃化轉變溫度、高耐熱性、低吸水率等綜合性能。 CN102993683A discloses a resin composition comprising a vinyl-modified polyphenylene ether resin as a host resin, a linear vinyl resin or a cyclic vinyl resin as a crosslinking agent. The substrate has a low dielectric constant, a low dielectric loss, and a high glass transition, based on 100 parts by weight of the vinyl-modified polyphenylene ether resin, and a linear vinyl resin or a cyclic vinyl resin of 10 to 90 parts by weight. Comprehensive properties such as temperature, high heat resistance and low water absorption.
乙烯基改性聚苯醚樹脂的介質常數及介質損耗性能比乙烯基有機矽樹脂差。以上兩篇專利皆以乙烯基改性聚苯醚樹脂為主體樹脂,乙烯基有機矽樹脂為交聯劑,所製備的基材介質損耗仍不夠低,不能滿足市場對高頻基材介質損耗越來越低的需求。 The dielectric constant and dielectric loss performance of the vinyl modified polyphenylene ether resin are inferior to those of the vinyl organic resin. The above two patents all use vinyl modified polyphenylene ether resin as the main resin, and vinyl organic oxime resin as the crosslinking agent. The dielectric loss of the prepared substrate is still not low enough to meet the market demand for high frequency substrate dielectric loss. Low demand.
如以乙烯基有機矽樹脂作為全體樹脂,所製備的基材雖然 具有更低的介質常數及介質損耗,但基材層間黏合力差,不能滿足覆銅板對基材層間黏合力的要求。 If a vinyl organic oxime resin is used as the entire resin, the prepared substrate is It has lower dielectric constant and dielectric loss, but the adhesion between the substrate layers is poor, which cannot meet the requirements of the adhesion between the copper-clad laminates.
針對現有技術存在的問題,本發明的目的之一在於提供一種熱固性乙烯基有機矽樹脂組合物。應用該樹脂組合物製備的基材具有低介質常數、低介質損耗、低吸水率,且層間黏合力能夠滿足覆銅板層間黏合力的要求。 In view of the problems of the prior art, it is an object of the present invention to provide a thermosetting vinyl organic tantalum resin composition. The substrate prepared by using the resin composition has a low dielectric constant, a low dielectric loss, a low water absorption rate, and the interlayer adhesion force can satisfy the requirement of the adhesion between the layers of the copper clad laminate.
為達此目的,本發明採用如下技術手段:本發明提供了一種熱固性乙烯基有機矽樹脂組合物,其包含:(1)乙烯基有機矽樹脂;該乙烯基有機矽樹脂為線性乙烯基有機矽樹脂、環形乙烯基有機矽樹脂、三維無規網狀結構MQ乙烯基有機矽樹脂中的任意一種或至少兩種的混合物;(2)乙烯基改性聚苯醚樹脂;(3)自由基引發劑;以乙烯基有機矽樹脂的重量為100份計,乙烯基改性聚苯醚樹脂的重量為10~30份。 To this end, the present invention employs the following technical means: The present invention provides a thermosetting vinyl organic tantalum resin composition comprising: (1) a vinyl organic tantalum resin; the vinyl organic tantalum resin is a linear vinyl organic germanium Any one or a mixture of at least two of a resin, a cyclic vinyl organic oxime resin, a three-dimensional random network structure MQ vinyl organic oxime resin; (2) a vinyl-modified polyphenylene ether resin; (3) a radical-induced The weight of the vinyl-modified polyphenylene ether resin is 10 to 30 parts by weight based on 100 parts by weight of the vinyl organic oxime resin.
本發明通過將乙烯基有機矽樹脂作為主體樹脂應用於覆銅板領域,由於其結構中不含有極性基團,從而保證了所製備的基材具有低介質常數、低介質損耗及低吸水率性能;由於乙烯基有機矽樹脂主鏈以 Si-O-Si為主鏈,熱分解溫度高,賦予了該種樹脂優異的抗熱氧老化性能,從而保證了採用該種樹脂製備的基材具有長期的介質常數及介質損耗穩定性。 The invention adopts the vinyl organic bismuth resin as the main resin in the field of copper clad laminates, and since the structure does not contain polar groups, the prepared substrate has low dielectric constant, low dielectric loss and low water absorption performance; Because of the vinyl organic bismuth resin backbone Si-O-Si is the main chain and has a high thermal decomposition temperature, which gives the resin excellent thermal and aging resistance, thereby ensuring long-term dielectric constant and dielectric loss stability of the substrate prepared by using the resin.
本發明中採用乙烯基有機矽樹脂作為主體樹脂,乙烯基改性聚苯醚樹脂作為基板層間黏合力改性劑,相對於純乙烯基有機矽樹脂體系,其所製備的基材層間黏合力大幅度提高,可滿足覆銅板對基材層間黏合力的要求;同時,發明人意外發現,其所製備的基材在介質常數及介質損耗性能方面與純乙烯基有機矽體系一致,也就是說,本發明採用乙烯基改性聚苯醚作為基板層間黏合力改性劑,沒有損害基材的介質常數及介質損耗性能,該技術達到該領域中具有通常知識者無法預期的功效。 In the invention, a vinyl organic bismuth resin is used as a main resin, and a vinyl modified polyphenylene ether resin is used as a substrate interlaminar adhesion modifier. Compared with a pure vinyl organic oxime resin system, the prepared substrate has a large interlaminar adhesion. The increase in amplitude can meet the requirements of the adhesion between the copper-clad laminates on the substrate; at the same time, the inventors have unexpectedly found that the substrates prepared are consistent with the pure vinyl organic germanium system in terms of dielectric constant and dielectric loss performance, that is, The invention adopts vinyl modified polyphenylene ether as the interlaminar adhesion modifier, without impairing the dielectric constant and dielectric loss performance of the substrate, and the technology achieves the unpredictable effect in the field which is generally not known.
此外,本發明通過採用乙烯基有機矽樹脂作為主體樹脂,乙烯基改性聚苯醚樹脂作為基板層間黏合力改性劑,在沒有使用阻燃劑的條件下,能夠實現無鹵無磷V-0級阻燃。 In addition, the present invention can realize halogen-free and phosphorus-free V-- using a vinyl-organophthalene resin as a host resin and a vinyl-modified polyphenylene ether resin as a substrate interlayer adhesion modifier without using a flame retardant. Grade 0 flame retardant.
本發明中,以乙烯基有機矽樹脂的重量為100重量份計,乙烯基改性聚苯醚樹脂的重量為10~30份,例如10份、12份、15份、18份、20份、22份、25份、28份或30份等。 In the present invention, the weight of the vinyl-modified polyphenylene ether resin is 10 to 30 parts by weight, for example, 10 parts, 12 parts, 15 parts, 18 parts, 20 parts, based on 100 parts by weight of the vinyl organic oxime resin. 22, 25, 28 or 30 parts, etc.
理想地,前述線性乙烯基有機矽樹脂的結構為:
其中,R1、R2、R3三者至少有一個為取代或未取代的C2~C10(例如C2、C3、C4、C5、C6、C7、C8、C9或C10等)含C=C的基團;其餘兩 者均獨立地選自取代或未取代的C1~C8(例如C1、C2、C3、C4、C5、C6、C7或C8等)直鏈烷基、取代或未取代的C1~C8(例如C1、C2、C3、C4、C5、C6、C7或C8等)支鏈烷基、取代或未取代的苯基、取代或未取代的C2~C10(例如C2、C3、C4、C5、C6、C7、C8、C9或C10等)含C=C的基團中的任意一種,且5m100(例如m為5、7、9、15、22、32、38、48、50、61、72、81、90、92或100等)。 Wherein at least one of R 1 , R 2 and R 3 is a substituted or unsubstituted C 2 -C 10 (for example C2, C3, C4, C5, C6, C7, C8, C9 or C10, etc.) containing C=C a group; the other two are independently selected from substituted or unsubstituted C1~C8 (eg, C1, C2, C3, C4, C5, C6, C7 or C8, etc.) linear alkyl, substituted or unsubstituted C1~ C8 (eg, C1, C2, C3, C4, C5, C6, C7 or C8, etc.) branched alkyl, substituted or unsubstituted phenyl, substituted or unsubstituted C2~C10 (eg C2, C3, C4, C5) , C6, C7, C8, C9 or C10, etc.) any of the groups containing C=C, and 5 m 100 (for example, m is 5, 7, 9, 15, 22, 32, 38, 48, 50, 61, 72, 81, 90, 92 or 100, etc.).
前述線性乙烯基有機矽樹脂的一個典型但非限制性實例是Gelestd的商品名為DMS-V05,其R1、R2、R3分別為甲基、乙烯基、甲基。對於DMS-V05樹脂,其所含的分子量是一個分佈,分子量有大有小,嚴格意義來說,相異分子量對應的m值相異,是一個範圍,而不是一個值。在實驗室,檢測高分子的分子量一般採用的是凝膠層析儀GPC,所得到數均分子量Mn,或重均分子量Mw,或黏均分子量Mp是一個相對值。因此對於DMS-V05樹脂,不能給出該樹脂分子量對應的m值。採用GPC儀器進行檢測,以甲苯作為流動相,該樹脂所得的分子量大小為Mn=800。同理適用於三維無規網狀結構MQ乙烯基有機矽樹脂。 A typical, but non-limiting example of the foregoing linear vinyl organoanthraquinone resin is the trade name DMS-V05 from Gelestd, wherein R 1 , R 2 , and R 3 are each a methyl group, a vinyl group, and a methyl group. For the DMS-V05 resin, the molecular weight contained therein is a distribution, and the molecular weight is large or small. In a strict sense, the m values corresponding to the different molecular weights are different, and are a range rather than a value. In the laboratory, the molecular weight of the polymer is generally determined by a gel chromatography GPC, and the number average molecular weight Mn, or the weight average molecular weight Mw, or the viscosity average molecular weight Mp is a relative value. Therefore, for the DMS-V05 resin, the m value corresponding to the molecular weight of the resin cannot be given. The detection was carried out by a GPC apparatus using toluene as a mobile phase, and the molecular weight of the resin was Mn = 800. The same applies to the three-dimensional random network structure MQ vinyl organic resin.
理想地,前述環形乙烯基有機矽樹脂的結構為:
其中,R4選自取代或未取代的C1~C12(例如C1、C2、C3、C4、C5、C6、C7、C8、C10或C12等)直鏈烷基或取代或未取代的C1~C12(例如C1、C2、C3、C4、C5、C6、C7、C8、C10或C12等)支鏈烷基;2n10,n為自然數(例如n為2、3、4、5、6、7、8、9或10等)。 Wherein R 4 is selected from a substituted or unsubstituted C1 to C12 (eg, C1, C2, C3, C4, C5, C6, C7, C8, C10 or C12, etc.) linear alkyl group or substituted or unsubstituted C1 to C12 (for example, C1, C2, C3, C4, C5, C6, C7, C8, C10 or C12, etc.) branched alkyl; 2 n 10, n is a natural number (for example, n is 2, 3, 4, 5, 6, 7, 8, 9, or 10, etc.).
前述環形乙烯基有機矽樹脂的一個典型但非限制性實例是武大有機矽的商品名為WD-V4,其R4為甲基,n=2。 A typical, but non-limiting example of the foregoing cyclic vinyl organic oxime resin is the trade name WD-V4 of Wuda organic ruthenium, wherein R 4 is methyl and n=2.
理想地,前述三維無規網狀結構MQ乙烯基有機矽樹脂的結構為:(R5R6R7SiO1/2)x(SiO4/2)y Desirably, the structure of the aforementioned three-dimensional random network structure MQ vinyl organic tantalum resin is: (R 5 R 6 R 7 SiO 1/2 ) x (SiO 4/2 ) y
其中,3x100(例如x為3、5、10、20、25、31、40、52、61、70、80、92、95或100等),6y100(例如x為6、10、20、25、31、40、52、61、70、80、92、95或100等),9x+y200(例如9x+y14、15x+y30、40x+y52、55x+y68、70x+y82、89x+y105、121x+y153、157x+y175、182x+y193、195x+y200等),且0.1x/y4(例如x/y為0.1、0.2、0.3、0.4、0.5、0.6、0.7、0.8、0.9、1.0、1.2、1.5、1.8、2.0、2.3、2.5、2.8、3.0、3.3、3.5、3.8或4.0等);R5、R6、R7三者至少有一個為含不飽和雙鍵的基團,其餘兩者均獨立地選自取代或未取代的C1~C8(例如C1、C2、C3、C4、C5、C6、C7或C8等)直鏈烷基、取代或未取代的C1~C8(例如C1、C2、C3、C4、C5、C6、C7或C8等)支鏈烷基、取代或未取代的苯基、取代或未取代的含C=C的基團中的任意一種。 Among them, 3 x 100 (for example, x is 3, 5, 10, 20, 25, 31, 40, 52, 61, 70, 80, 92, 95 or 100, etc.), 6 y 100 (for example, x is 6, 10, 20, 25, 31, 40, 52, 61, 70, 80, 92, 95 or 100, etc.), 9 x+y 200 (for example, 9 x+y 14,15 x+y 30, 40 x+y 52, 55 x+y 68, 70 x+y 82, 89 x+y 105, 121 x+y 153,157 x+y 175, 182 x+y 193, 195 x+y 200, etc.), and 0.1 x/y 4 (for example, x/y is 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 1.2, 1.5, 1.8, 2.0, 2.3, 2.5, 2.8, 3.0, 3.3, 3.5, 3.8 or 4.0 And the like; at least one of R 5 , R 6 , and R 7 is a group containing an unsaturated double bond, and the other two are independently selected from substituted or unsubstituted C1 to C8 (eg, C1, C2, C3, C4, C5, C6, C7 or C8, etc.) linear alkyl, substituted or unsubstituted C1~C8 (eg C1, C2, C3, C4, C5, C6, C7 or C8, etc.) branched alkyl, substituted or Any one of an unsubstituted phenyl group, a substituted or unsubstituted C=C-containing group.
前述三維無規網狀結構MQ乙烯基有機矽樹脂的一個典型但非限制性實例是山東大易化工的商品名為DY-VMQ102,其R5、R6、R7分別為甲基、甲基、乙烯基。採用GPC儀器進行檢測,以甲苯作為流動相,該樹脂所得的分子量大小為Mn=2632。 A typical but non-limiting example of the aforementioned three-dimensional random network structure MQ vinyl organic tantalum resin is the trade name of DY-VMQ102 of Shandong Dayi Chemical Co., Ltd., and R 5 , R 6 and R 7 are respectively methyl and methyl groups. , vinyl. The detection was carried out by a GPC apparatus using toluene as a mobile phase, and the molecular weight of the resin was Mn = 2632.
前述三維網狀結構具有多個節點,形成多個孔洞的結構,
例如如下結構(該結構只作為例舉,而不作為窮盡):
理想地,前述乙烯基改性聚苯醚樹脂具有如下結構:
其中,1e100(例如e為1、3、5、7、9、15、22、32、38、48、50、61、72、81、90、92或100等),1f100(例如f為1、3、5、7、9、15、22、32、38、48、50、61、72、81、90、92或100等),2e+f100(例如2e+f10、10e+f20、15e+f30、25e+f40、30e+f55,60e+f85、65e+f75、80e+f98或85e+f100等);此外M選自:或,
其中,N選自-O-、-CO-、-SO-、-SC-、-SO2-、-C(CH3)2-中的任意一種或至少兩種的組合;R8、R10、R12、R14、R17、R19、R21及R23均獨立地選自取代或未取代的C1~C8(例如C1、C2、C3、C4、C5、C6、C7或C8等)直鏈烷基、取代或未取代的C1~C8(例如C1、C2、C3、C4、C5、C6、C7或C8等)支鏈烷基、取代或未取代的苯基中的任意一種或至少兩種的組合;R9、R11、R13、R15、R18、R20、R22及R24均獨立地選自氫原子、取代或未取代的C1~C8(例如C1、C2、C3、C4、C5、C6、C7或C8等)直鏈烷基、取代或未取代的C1~C8(例如C1、C2、C3、C4、C5、C6、C7或C8等)支鏈烷基、取代或未取代的苯基中的任意一種或至少兩種的組合;R16選自:或,
理想地,前述乙烯基改性聚苯醚樹脂的數均分子量為500~10000g/mol,例如500g/mol、800g/mol、1000g/mol、1100g/mol、1500g/mol、4000g/mol、5600g/mol、8000g/mol或10000g/mol等,理想為800~8000g/mol,進一步理想為1000~4000g/mol。 Desirably, the vinyl-modified polyphenylene ether resin has a number average molecular weight of 500 to 10000 g/mol, for example, 500 g/mol, 800 g/mol, 1000 g/mol, 1100 g/mol, 1500 g/mol, 4000 g/mol, 5600 g/ Mol, 8000 g/mol or 10000 g/mol, etc., preferably 800 to 8000 g/mol, further preferably 1000 to 4000 g/mol.
理想地,前述自由基引發劑為過氧化物自由基引發劑。 Desirably, the aforementioned free radical initiator is a peroxide free radical initiator.
進一步理想地,前述自由基引發劑選自過氧化二異丙苯、過氧化二苯甲醯、過氧化苯甲酸叔丁酯或4,4-二(叔丁基過氧化)戊酸正丁酯中的任意一種或至少兩種的混合物,其中典型但非限制性的混合物為:4,4-二(叔丁基過氧化)戊酸正丁酯及過氧化苯甲酸叔丁酯的混合物,過氧化二苯甲醯及過氧化二異丙苯的混合物,4,4-二(叔丁基過氧化)戊酸正丁酯及過氧化二苯甲醯的混合物,過氧化苯甲酸叔丁酯及過氧化二異丙苯的混合物,4,4-二(叔丁基過氧化)戊酸正丁酯、過氧化苯甲酸叔丁酯及過氧化二苯甲醯的混合物。 Further desirably, the aforementioned radical initiator is selected from the group consisting of dicumyl peroxide, dibenzoyl peroxide, tert-butyl peroxybenzoate or n-butyl 4,4-di(tert-butylperoxy)pentanoate Any one or a mixture of at least two, wherein a typical but non-limiting mixture is: a mixture of n-butyl 4,4-di(tert-butylperoxy)pentanoate and t-butyl peroxybenzoate, a mixture of benzamidine oxide and dicumyl peroxide, a mixture of n-butyl 4,4-di(tert-butylperoxy)pentanoate and benzammonium peroxide, tert-butyl peroxybenzoate and A mixture of dicumyl peroxide, a mixture of n-butyl 4,4-di(tert-butylperoxy)valerate, tert-butyl peroxybenzoate, and benzammonium peroxide.
在本發明所述樹脂組合物中,自由基引發劑可以單獨使用,亦可混合使用,混合使用可以達到更好的協同效果。 In the resin composition of the present invention, the radical initiators may be used singly or in combination, and a mixed effect may be used to achieve a better synergistic effect.
理想地,以乙烯基有機矽樹脂及乙烯基改性聚苯醚樹脂的重量份之及為100份計,自由基引發劑的重量為1~3份,例如1份、1.2份、1.5份、1.8份、2份、2.2份、2.5份、2.8份或3份等。 Desirably, the weight of the radical initiator is from 1 to 3 parts by weight of the vinyl organic oxime resin and the vinyl modified polyphenylene ether resin, for example, 1 part, 1.2 parts, 1.5 parts, 1.8 parts, 2 parts, 2.2 parts, 2.5 parts, 2.8 parts or 3 parts, and the like.
理想地,本發明所述樹脂組合物還可以包含粉末填料。 Desirably, the resin composition of the present invention may further comprise a powder filler.
理想地,前述粉末填料選自結晶型二氧化矽、無定形二氧化矽、球形二氧化矽、熔融二氧化矽、二氧化鈦、碳化矽、玻璃纖維、氧 化鋁、氮化鋁、氮化硼、鈦酸鋇或鈦酸鍶中的任意一種或至少兩種的混合物,其中典型但非限制性的混合物為:結晶型二氧化矽及無定形二氧化矽的混合物,球形二氧化矽及二氧化鈦的混合物,碳化矽及玻璃纖維的混合物,氧化鋁及氮化鋁的混合物,氮化硼及鈦酸鋇的混合物,鈦酸鍶及碳化矽的混合物,球形二氧化矽、結晶型二氧化矽及無定形二氧化矽的混合物。 Desirably, the aforementioned powder filler is selected from the group consisting of crystalline cerium oxide, amorphous cerium oxide, spherical cerium oxide, molten cerium oxide, titanium dioxide, cerium carbide, glass fiber, oxygen. Any one or a mixture of at least two of aluminum, aluminum nitride, boron nitride, barium titanate or barium titanate, wherein a typical but non-limiting mixture is: crystalline cerium oxide and amorphous cerium oxide Mixture, a mixture of spherical cerium oxide and titanium dioxide, a mixture of cerium carbide and glass fiber, a mixture of aluminum oxide and aluminum nitride, a mixture of boron nitride and barium titanate, a mixture of barium titanate and strontium carbide, spherical a mixture of cerium oxide, crystalline cerium oxide and amorphous cerium oxide.
在本發明所述樹脂組合物中,粉末填料起著提高尺寸穩定性、降低熱膨脹係數、降低體系成本等作用。對於前述粉末填料的形狀及粒徑,本發明不作特殊限定,通常使用的粒徑為0.2~10μm,例如0.2μm、0.5μm、1μm、2μm、3μm、5μm、8μm、9μm或10μm等,例如,可選擇粒徑為0.2~10μm的球形二氧化矽。 In the resin composition of the present invention, the powder filler functions to improve dimensional stability, lower thermal expansion coefficient, lower system cost, and the like. The shape and particle diameter of the powder filler are not particularly limited, and the particle diameter generally used is 0.2 to 10 μm, for example, 0.2 μm, 0.5 μm, 1 μm, 2 μm, 3 μm, 5 μm, 8 μm, 9 μm or 10 μm, etc., for example, A spherical cerium oxide having a particle diameter of 0.2 to 10 μm can be selected.
理想地,以乙烯基有機矽樹脂及乙烯基改性聚苯醚樹脂的重量份之和為100份計,粉末填料的重量為100~300份,例如100份、110份、120份、130份、140份、150份、160份、180份、180份、190份、200份、210、220份、230份、240份、250份、260份、270份、280、290或300份等。 Desirably, the weight of the powdered filler is 100 to 300 parts, for example, 100 parts, 110 parts, 120 parts, 130 parts by weight of 100 parts by weight of the vinyl organic oxime resin and the vinyl modified polyphenylene ether resin. , 140 parts, 150 parts, 160 parts, 180 parts, 180 parts, 190 parts, 200 parts, 210, 220 parts, 230 parts, 240 parts, 250 parts, 260 parts, 270 parts, 280, 290 or 300 parts, and the like.
本發明所述的「包含」,意指其除前述組分外,還可以包含其他組分,這些其他組分賦予前述樹脂組合物相異的特性。除此之外,本發明所述的「包含」,還可以替換為封閉式的「為」或「由……組成」。 The term "comprising" as used in the present invention means that it may contain, in addition to the foregoing components, other components which impart different characteristics to the aforementioned resin composition. In addition, the "include" described in the present invention may be replaced by a closed "yes" or "consisting of".
例如,本發明所述熱固性乙烯基有機矽樹脂組合物可以添加配合的熱固性樹脂,作為具體例,可以舉出環氧樹脂、氰酸酯樹脂、酚醛樹脂、聚胺酯樹脂、蜜胺樹脂等,亦可添加這些熱固性樹脂的固化劑或 者固化促進劑。 For example, the thermosetting vinyl phthalocyanine resin composition of the present invention may be added with a thermosetting resin, and specific examples thereof include an epoxy resin, a cyanate resin, a phenol resin, a polyurethane resin, a melamine resin, and the like. Add these curing agents for thermosetting resins or Curing accelerator.
此外,前述樹脂組合物還可以含有各種添加劑,作為具體例,可以舉出矽烷偶聯劑、鈦酸酯偶聯劑、抗氧劑、熱穩定劑、抗靜電劑、紫外線吸收劑、顏料、著色劑、潤滑劑等。這些添加劑可以單獨使用,亦可兩種或者兩種以上混合使用。 Further, the resin composition may further contain various additives, and specific examples thereof include a decane coupling agent, a titanate coupling agent, an antioxidant, a heat stabilizer, an antistatic agent, an ultraviolet absorber, a pigment, and a coloring. Agents, lubricants, etc. These additives may be used singly or in combination of two or more.
作為本發明樹脂組合物之一的製備方法,可以通過習知的方法配合、攪拌、混合前述的乙烯基有機矽樹脂、乙烯基改性聚苯醚樹脂、自由基引發劑、粉末填料,以及各種熱固性樹脂、各種添加劑,來製備。 As a preparation method of one of the resin compositions of the present invention, the aforementioned vinyl organic oxime resin, vinyl-modified polyphenylene ether resin, radical initiator, powder filler, and various various kinds can be blended, stirred, and mixed by a conventional method. It is prepared by using a thermosetting resin and various additives.
本發明的目的之二在於提供一種樹脂膠液,其是將如上所述的樹脂組合物溶解或分散在溶劑中得到。 Another object of the present invention is to provide a resin glue obtained by dissolving or dispersing the resin composition as described above in a solvent.
作為本發明中的溶劑,沒有特別限定,作為具體例,可以舉出甲醇、乙醇、丁醇等醇類,乙基溶纖劑、丁基溶纖劑、乙二醇-甲醚、卡必醇、丁基卡必醇等醚類,丙酮、丁酮、甲基乙基甲酮、甲基異丁基甲酮、環己酮等酮類,甲苯、二甲苯、均三甲苯等芳香族烴類,乙氧基乙基乙酸酯、醋酸乙酯等酯類,N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基-2-吡咯烷酮等含氮類溶劑。上述溶劑可以單獨使用一種,亦可兩種或者兩種以上混合使用,理想為甲苯、二甲苯、均三甲苯等芳香族烴類溶劑與丙酮、丁酮、甲基乙基甲酮、甲基異丁基甲酮、環己酮等酮類熔劑混合使用。前述溶劑的使用量該領域中具有通常知識者可以根據自己的經驗來選擇,使得到的樹脂膠液達到適於使用的黏度即可。 The solvent in the present invention is not particularly limited, and specific examples thereof include alcohols such as methanol, ethanol, and butanol, ethyl cellosolve, butyl cellosolve, ethylene glycol-methyl ether, carbitol, and butyl. Ethers such as carbitol, ketones such as acetone, methyl ethyl ketone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; aromatic hydrocarbons such as toluene, xylene, and mesitylene; An ester such as ethyl acetate or ethyl acetate; a nitrogen-containing solvent such as N,N-dimethylformamide, N,N-dimethylacetamide or N-methyl-2-pyrrolidone. These solvents may be used singly or in combination of two or more. It is preferably an aromatic hydrocarbon solvent such as toluene, xylene or mesitylene and acetone, methyl ethyl ketone, methyl ethyl ketone or methyl A ketone flux such as butyl ketone or cyclohexanone is used in combination. The amount of the aforementioned solvent used can be selected according to one's own experience in the field, so that the obtained resin glue can reach a viscosity suitable for use.
在如上所述的樹脂組合物溶解或分散在溶劑的過程中,可 以添加乳化劑。通過乳化劑進行分散,可以使粉末填料等在膠液中分散均勻。 In the process of dissolving or dispersing the resin composition as described above in the solvent, To add an emulsifier. By dispersing by an emulsifier, the powder filler or the like can be uniformly dispersed in the glue.
本發明的目的之三在於提供一種預浸料,其是將玻璃纖維布浸潤在如上所述的樹脂膠液後,乾燥得到。 A third object of the present invention is to provide a prepreg obtained by dipping a glass fiber cloth in a resin glue as described above and drying it.
在本發明中,玻璃纖維布為增強材料,在複合材料中起著提高強度、提高尺寸穩定性、降低熱固性樹脂固化的收縮等作用。根據板材厚度等要求相異,可選用相異類型的玻璃纖維布。示例性的玻璃纖維布如:7628玻纖布、2116玻纖布。 In the present invention, the glass fiber cloth is a reinforcing material, and functions to increase strength, improve dimensional stability, and reduce shrinkage of curing of the thermosetting resin in the composite material. Depending on the thickness of the sheet, etc., different types of fiberglass cloth can be used. Exemplary glass fiber cloths are: 7628 fiberglass cloth, 2116 fiberglass cloth.
以乙烯基有機矽樹脂、乙烯基改性聚苯醚樹脂及粉末填料的重量之和為100重量份計,玻璃纖維布的重量為40~150份,例如40份、50份、60份、70份、80份、90份、100份、110份、120份、130份、140份或150份等。 The weight of the glass fiber cloth is 40 to 150 parts, for example, 40 parts, 50 parts, 60 parts, 70, based on 100 parts by weight of the sum of the weights of the vinyl organic oxime resin, the vinyl modified polyphenylene ether resin, and the powder filler. Parts, 80 parts, 90 parts, 100 parts, 110 parts, 120 parts, 130 parts, 140 parts or 150 parts, and the like.
前述乾燥溫度為80~220℃,例如80℃、90℃、110℃、150℃、170℃、190℃、200℃或220℃等;前述乾燥時間為1~30min,例如1min、5min、8min、13min、17min、21min、24min、28min或30min等。 The drying temperature is 80-220 ° C, such as 80 ° C, 90 ° C, 110 ° C, 150 ° C, 170 ° C, 190 ° C, 200 ° C or 220 ° C, etc.; the aforementioned drying time is 1 ~ 30 min, such as 1 min, 5 min, 8 min, 13min, 17min, 21min, 24min, 28min or 30min.
本發明的目的之四在於提供一種高頻電路基板,其由如上所述的預浸料製成,具體而言,前述高頻電路基板是通過下述方法製得的:重疊至少一張如上所述的預浸料,在重疊預浸料的上下兩側放置銅箔,進行層壓成型製備得到。 A fourth object of the present invention is to provide a high-frequency circuit substrate which is made of the prepreg as described above, and in particular, the above-mentioned high-frequency circuit substrate is obtained by overlapping at least one of the above The prepreg is prepared by placing a copper foil on the upper and lower sides of the overlapping prepreg and performing lamination molding.
前述重疊理想為採用自動堆疊操作,從而使工藝操作更加簡便。 The aforementioned overlap is ideal for automatic stacking operations, which makes the process operation easier.
前述層壓成型理想為真空層壓成型,真空層壓成型可以通過真空層壓機實現。前述層壓的時間為70~120min,例如70min、75min、80min、85min、90min、95min、100min、105min、110min、115min或120min等;前述層壓的溫度為180~220℃,例如180℃、185℃、190℃、195℃、200℃、205℃、210℃、215℃或220℃;前述層壓的壓力為40~60kg/cm2,例如40kg/cm2、45kg/cm2、50kg/cm2、55kg/cm2、58kg/cm2或60kg/cm2等。 The aforementioned lamination molding is desirably a vacuum lamination molding, and the vacuum lamination molding can be realized by a vacuum laminator. The lamination time is 70-120 min, such as 70 min, 75 min, 80 min, 85 min, 90 min, 95 min, 100 min, 105 min, 110 min, 115 min or 120 min, etc.; the lamination temperature is 180-220 ° C, for example 180 ° C, 185 °C, 190 ° C, 195 ° C, 200 ° C, 205 ° C, 210 ° C, 215 ° C or 220 ° C; the pressure of the aforementioned lamination is 40 ~ 60 kg / cm 2 , for example 40 kg / cm 2 , 45 kg / cm 2 , 50 kg / cm 2, 55kg / cm 2, 58kg / cm 2 or 60kg / cm 2 and the like.
本發明典型但非限制性的高頻電路基板的製備方法如下:(1)按上述前述樹脂組合物配方,稱取各組分:以乙烯基有機矽樹脂的重量為100份計,乙烯基改性聚苯醚樹脂的重量為10~30份;以乙烯基有機矽樹脂及乙烯基改性聚苯醚樹脂的重量份之和為100份計,自由基引發劑的重量為1~3份;以乙烯基有機矽樹脂及乙烯基改性聚苯醚樹脂的重量份之和為100份計,前述粉末填料的重量為100~300份;(2)將乙烯基有機矽樹脂、乙烯基改性聚苯醚樹脂、自由基引發劑及粉料填料混合,並加入適量溶劑,攪拌分散均勻,使粉料填料與阻燃劑均勻分散在樹脂膠液中;用製備的膠液浸潤玻璃纖維布,烘乾,除去溶劑,得到預浸料;(3)重疊至少一張的預浸料,在預浸料的兩側放置銅箔,在真空層壓機中層壓固化,從而得到高頻電路基板。 A typical but non-limiting method for preparing a high-frequency circuit substrate of the present invention is as follows: (1) According to the above-mentioned resin composition formulation, each component is weighed: the weight of the vinyl organic oxime resin is 100 parts, and the vinyl is changed. The weight of the polyphenylene ether resin is 10 to 30 parts; and the weight of the vinyl organic oxime resin and the vinyl modified polyphenylene ether resin is 100 parts by weight, and the weight of the radical initiator is 1 to 3 parts; The weight of the vinyl filler resin and the vinyl modified polyphenylene ether resin is 100 parts by weight, and the weight of the powder filler is 100 to 300 parts; (2) the vinyl organic resin and vinyl modification are used. Polyphenylene ether resin, free radical initiator and powder filler are mixed, and an appropriate amount of solvent is added, and the mixture is uniformly dispersed, so that the powder filler and the flame retardant are uniformly dispersed in the resin glue; the glass fiber cloth is infiltrated with the prepared glue liquid, Drying, removing the solvent to obtain a prepreg; (3) overlapping at least one prepreg, placing copper foil on both sides of the prepreg, and laminating and solidifying in a vacuum laminator to obtain a high-frequency circuit substrate.
本發明的目的之五在於提供一種如上所述的樹脂組合物在製備樹脂膠液、預浸料及高頻電路基板中的應用。 A fifth object of the present invention is to provide an application of the above-described resin composition for preparing a resin glue, a prepreg, and a high-frequency circuit substrate.
採用本發明所述的樹脂組合物可以製備得到具有低的介質 常數、低的介質損耗,低的吸水率的高頻電路基板,此外基材間的層間黏合力能夠滿足覆銅板層間黏合力的要求。 The resin composition of the present invention can be prepared to have a low medium The high-frequency circuit substrate with constant, low dielectric loss, low water absorption, and the interlayer adhesion between the substrates can meet the requirements of the adhesion between the layers of the copper-clad laminate.
本發明中前述「高頻」意指頻率大於100MHz。 The aforementioned "high frequency" in the present invention means that the frequency is greater than 100 MHz.
與現有技術相比,本發明具有如下功效:(1)本發明通過將乙烯基有機矽樹脂應用於覆銅板領域,其化學結構中由於不含極性基團,從而保證了所製備的基材具有低的介質常數及低的介質損耗性能;(2)本發明通過採用乙烯基有機矽樹脂作為主體樹脂,乙烯基改性聚苯醚作為基板層間黏合力改性劑,相對於純乙烯基有機矽體系,其所製備的基材層間黏合力大幅度提高,可滿足覆銅板對基材層間黏合力的要求,且所製備的基材介質常數及介質損耗性能與純乙烯基有機矽體系一致,乙烯基改性聚苯醚作為層間黏合力改性劑,沒有損害基材的介質常數及介質損耗性能;(3)本發明採用乙烯基有機矽樹脂作為主體樹脂,乙烯基改性聚苯醚作為基板層間黏合力改性劑,在沒有使用阻燃劑的條件下,能夠實現無鹵無磷V-0級阻燃;本發明通過採用乙烯基有機矽樹脂作為主體樹脂,乙烯基改性聚苯醚作為基板層間黏合力改性劑,所製備的基板具有低介質常數及低介質損耗,好的基材層間黏合力,能滿足覆銅板的使用需求,同時能夠實現無鹵無磷V-0級阻燃,非常適合製備高頻電子設備的電路基板。 Compared with the prior art, the present invention has the following effects: (1) The present invention ensures that the prepared substrate has a chemical structure because it does not contain a polar group by applying a vinyl organic oxime resin to the field of copper clad laminates. Low dielectric constant and low dielectric loss performance; (2) The present invention uses a vinyl organic oxime resin as a host resin, and a vinyl-modified polyphenylene ether as a substrate interlayer adhesion modifier relative to a pure vinyl organic ruthenium The system has a greatly improved adhesion between the substrates, and can meet the requirements of the adhesion between the copper-clad laminates, and the dielectric constant and dielectric loss performance of the prepared substrates are consistent with the pure vinyl organic ruthenium system. The modified polyphenylene ether as the interlaminar adhesion modifier does not impair the dielectric constant and dielectric loss performance of the substrate; (3) The present invention uses a vinyl organic oxime resin as a host resin and a vinyl modified polyphenylene ether as a substrate. The interlayer adhesion modifier can realize halogen-free and phosphorus-free V-0 flame retardant without using a flame retardant; the invention adopts vinyl organic germanium resin as The resin and vinyl modified polyphenylene ether are used as the interlaminar adhesion modifier. The prepared substrate has low dielectric constant and low dielectric loss, and good adhesion between the substrates can meet the needs of the copper clad laminate. It realizes halogen-free and phosphorus-free V-0 flame retardant, and is very suitable for the circuit board for preparing high-frequency electronic equipment.
為便於理解本發明,本發明列舉實施例如下。該領域中具有通常知識者應該明瞭,前述實施例僅僅是幫助理解本發明,不應視為對本發明的具體限制,下述實施例及對比例中的4張2116亦可替換成1張2116、6張2116、2張1080等。 To facilitate an understanding of the invention, the invention is set forth below. It is to be understood by those skilled in the art that the foregoing embodiments are merely to be construed as an understanding of the present invention and are not to be construed as limiting the invention. In the following embodiments and comparative examples, four sheets of 2116 may be replaced by one sheet of 2116. 6 sheets of 2116, 2 sheets of 1080, etc.
下述表1所示為各實施例及比較例所用原料。 Table 1 below shows the materials used in the respective examples and comparative examples.
實施例1 Example 1
將80.0重量份的三維無規網狀結構MQ乙烯基有機矽樹脂DY-VMQ102,20.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表2所示。 80.0 parts by weight of a three-dimensional random network structure MQ vinyl organic resin DY-VMQ102, 20.0 parts by weight of a vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight of ruthenium The fine powder 525 was dissolved in a toluene solvent and adjusted to a suitable viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 2.
實施例2 Example 2
將80.0重量份的線性乙烯基有機矽樹脂DMS-V05,20.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表2所示。 80.0 parts by weight of a linear vinyl organic oxime resin DMS-V05, 20.0 parts by weight of a vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight of cerium fine powder 525, dissolved in toluene In the solvent, and adjust to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 2.
實施例3 Example 3
將80.0重量份的環形乙烯基有機矽樹脂WD-V4,20.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表2所示。 80.0 parts by weight of the cyclic vinyl organic fluorene resin WD-V4, 20.0 parts by weight of the vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of the radical initiator DCP, 233.0 parts by weight of the cerium fine powder 525, dissolved in toluene In the solvent, and adjust to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 2.
比較例1 Comparative example 1
將100重量份的三維無規網狀結構MQ乙烯基有機矽樹脂DY-VMQ102,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高 頻電路基板。基材綜合性能如表2所示。 100 parts by weight of a three-dimensional random network structure MQ vinyl organic resin DY-VMQ102, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight of cerium fine powder 525, dissolved in a toluene solvent, and adjusted to a suitable viscosity . The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 2.
比較例2 Comparative example 2
將100重量份的線性乙烯基有機矽樹脂DMS-V05,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表2所示。 100 parts by weight of a linear vinyl organic oxime resin DMS-V05, 3.0 parts by weight of a radical initiator DCP, and 233.0 parts by weight of cerium fine powder 525 were dissolved in a toluene solvent and adjusted to a suitable viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 2.
比較例3 Comparative example 3
將100重量份的環形乙烯基有機矽樹脂WD-V4,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表2所示。 100 parts by weight of the cyclic vinyl organic hydrazine resin WD-V4, 3.0 parts by weight of a radical initiator DCP, and 233.0 parts by weight of cerium fine powder 525 were dissolved in a toluene solvent and adjusted to a suitable viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 2.
比較例4 Comparative example 4
將20.0重量份的三維無規網狀結構MQ乙烯基有機矽樹脂DY-VMQ102,80.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並 在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表2所示。 20.0 parts by weight of a three-dimensional random network structure MQ vinyl organic resin DY-VMQ102, 80.0 parts by weight of a vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight of ruthenium The fine powder 525 was dissolved in a toluene solvent and adjusted to a suitable viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 2.
比較例5 Comparative Example 5
將20.0重量份的線性乙烯基有機矽樹脂DMS-V05,80.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表2所示。 20.0 parts by weight of a linear vinyl organic oxime resin DMS-V05, 80.0 parts by weight of a vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight of cerium fine powder 525, dissolved in toluene In the solvent, and adjust to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 2.
比較例6 Comparative Example 6
將20.0重量份的環形乙烯基有機矽樹脂WD-V4,80.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表2所示。 20.0 parts by weight of the cyclic vinyl organic fluorene resin WD-V4, 80.0 parts by weight of the vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of the radical initiator DCP, 233.0 parts by weight of the cerium fine powder 525, dissolved in toluene In the solvent, and adjust to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 2.
通過表2可以看出,將實施例1~3分別與比較例1~3相比,實施例1~3所製備的基材層間結合力為0.4~0.6,而比較例1~3製備的基材層間結合力僅為0.1~0.2,說明本發明通過採用乙烯基有機矽樹脂作為主體樹脂,乙烯基改性聚苯醚作為基板層間黏合力改性劑,相對於純乙烯基有機矽體系,其所製備的基材層間黏合力大幅度提高;此外,實施例1~3所製備的基材介質常數及介質損耗性能基本與比較例1~3一致,說明本發明採用乙烯基改性聚苯醚作為層間黏合力改性劑,沒有損害基材的介質常數及介質損耗性能。將實施例1~3分別與比較例4~6相比,實施例1~3所製備的基材在沒有使用阻燃劑的條件下,能夠實現無鹵無磷V-0級阻燃,而比較例4~6卻不能實現V-0級阻燃;此外,相對於比較例4~6,實施例1~3所製備的基材具有更低的介質常數及介質損耗,說明本發明通 過採用乙烯基有機矽樹脂作為主體樹脂,乙烯基改性聚苯醚作為基板層間黏合力改性劑,相對於採用乙烯基改性聚苯醚樹脂作為主體樹脂,乙烯基有機矽樹脂作為交聯劑,其所製備的基材具有更優異的介電常數及介質損耗性能,並能實現無鹵無磷V-0級阻燃。 As can be seen from Table 2, in Examples 1 to 3, compared with Comparative Examples 1 to 3, the adhesion between the substrates prepared in Examples 1 to 3 was 0.4 to 0.6, and the substrates prepared in Comparative Examples 1 to 3 were used. The bonding force between the layers is only 0.1~0.2, which indicates that the invention adopts vinyl organic oxime resin as the main resin and vinyl modified polyphenylene ether as the interlaminar adhesion modifier, compared with the pure vinyl organic ruthenium system. The prepared interlaminar adhesion between the substrates was greatly improved; in addition, the dielectric constants and dielectric loss properties of the substrates prepared in Examples 1 to 3 were basically the same as those in Comparative Examples 1 to 3, indicating that the present invention uses vinyl modified polyphenylene ether. As the interlayer adhesion modifier, the dielectric constant and dielectric loss performance of the substrate were not impaired. Comparing Examples 1 to 3 with Comparative Examples 4 to 6, respectively, the substrates prepared in Examples 1 to 3 were able to achieve halogen-free and phosphorus-free V-0 flame retardant without using a flame retardant. In Comparative Examples 4 to 6, the V-0 grade flame retardant could not be achieved; in addition, the substrates prepared in Examples 1 to 3 had lower dielectric constants and dielectric loss than Comparative Examples 4 to 6, indicating that the present invention is Vinyl organic fluorene resin is used as the main resin, vinyl modified polyphenylene ether is used as the interlaminar adhesion modifier, and vinyl organic fluorene resin is used as the main resin and vinyl organic hydrazine resin as the crosslinking. The substrate prepared by the invention has better dielectric constant and dielectric loss performance, and can realize halogen-free and phosphorus-free V-0 flame retardant.
實施例4 Example 4
將90.0重量份的三維無規網狀結構MQ乙烯基有機矽樹脂DY-VMQ102,10.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表3所示。 90.0 parts by weight of a three-dimensional random network structure MQ vinyl organic resin DY-VMQ102, 10.0 parts by weight of a vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight of ruthenium The fine powder 525 was dissolved in a toluene solvent and adjusted to a suitable viscosity. The 2116 glass fiber cloth was used to impregnate the resin glue, and the clamp shaft was controlled to be suitable for single weight, and dried in an oven to remove the toluene solvent, 2116 prepreg. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 3.
實施例5 Example 5
將90.0重量份的線性乙烯基有機矽樹脂DMS-V05,10.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表3所示。 90.0 parts by weight of a linear vinyl organic oxime resin DMS-V05, 10.0 parts by weight of a vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight of cerium fine powder 525, dissolved in toluene In the solvent, and adjust to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 3.
實施例6 Example 6
將90.0重量份的環形乙烯基有機矽樹脂WD-V4,10.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表3所示。 90.0 parts by weight of the cyclic vinyl organic fluorene resin WD-V4, 10.0 parts by weight of the vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of the radical initiator DCP, 233.0 parts by weight of the cerium fine powder 525, dissolved in toluene In the solvent, and adjust to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 3.
比較例7 Comparative Example 7
將10.0重量份的三維無規網狀結構MQ乙烯基有機矽樹脂DY-VMQ102,90.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力50kg/cm2,固化溫度200℃,製得高頻電路基板。基材綜合性能如表3所示。 10.0 parts by weight of a three-dimensional random network structure MQ vinyl organic resin DY-VMQ102, 90.0 parts by weight of a vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight of ruthenium The fine powder 525 was dissolved in a toluene solvent and adjusted to a suitable viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum laminated for 90 minutes in a press, a curing pressure of 50 kg/cm 2 , and a curing temperature of 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 3.
比較例8 Comparative Example 8
將10.0重量份的線性乙烯基有機矽樹脂DMS-V05,90.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度 的銅箔,在壓機中真空層壓固化90min,固化壓力50kg/cm2,固化溫度200℃,製得高頻電路基板。基材綜合性能如表3所示。 10.0 parts by weight of a linear vinyl organic oxime resin DMS-V05, 90.0 parts by weight of a vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight of cerium fine powder 525, dissolved in toluene In the solvent, and adjust to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum laminated for 90 minutes in a press, a curing pressure of 50 kg/cm 2 , and a curing temperature of 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 3.
比較例9 Comparative Example 9
將10.0重量份的環型乙烯基有機矽樹脂WD-V4,90.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力50kg/cm2,固化溫度200℃,製得高頻電路基板。基材綜合性能如表3所示。 10.0 parts by weight of a cyclic vinyl organic fluorene resin WD-V4, 90.0 parts by weight of a vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of a radical initiator DCP, and 233.0 parts by weight of a cerium fine powder 525 were dissolved in In toluene solvent, and adjusted to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum laminated for 90 minutes in a press, a curing pressure of 50 kg/cm 2 , and a curing temperature of 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 3.
通過表3可以看出,將實施例4~5分別與比較例7~9相比,實施例4~6所製備的基材在沒有使用阻燃劑的條件下,能夠實現無鹵無磷V-0級阻燃,而比較例7~9卻不能實現V-0級阻燃;此外,相對於比 較例7~9,實施例4~6所製備的基材具有更低的介質常數及介質損耗,說明本發明通過採用乙烯基有機矽樹脂作為主體樹脂,乙烯基改性聚苯醚作為基板層間黏合力改性劑,相對於採用乙烯基改性聚苯醚樹脂作為主體樹脂,乙烯基有機矽樹脂作為交聯劑,其所製備的基材具有更優異的介電常數及介質損耗性能,並能實現無鹵無磷V-0級阻燃。 As can be seen from Table 3, the substrates prepared in Examples 4 to 6 were able to achieve halogen-free and phosphorus-free V without using a flame retardant, as compared with Comparative Examples 7 to 9, respectively. -0 grade flame retardant, while Comparative Examples 7-9 can not achieve V-0 flame retardant; in addition, relative to the ratio Compared with Examples 7-9, the substrates prepared in Examples 4-6 have lower dielectric constant and dielectric loss, indicating that the present invention uses vinyl-based phthalocyanine resin as the host resin and vinyl-modified polyphenylene ether as the substrate layer. The adhesive modifier has a superior dielectric constant and dielectric loss performance compared with a vinyl-modified polyphenylene ether resin as a host resin and a vinyl organic oxime resin as a crosslinking agent. It can realize halogen-free and phosphorus-free V-0 flame retardant.
實施例7 Example 7
將85.0重量份的三維無規網狀結構MQ乙烯基有機矽樹脂DY-VMQ102,15.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表4所示。 85.0 parts by weight of a three-dimensional random network structure MQ vinyl organic resin DY-VMQ102, 15.0 parts by weight of a vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight of ruthenium The fine powder 525 was dissolved in a toluene solvent and adjusted to a suitable viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 4.
實施例8 Example 8
將85.0重量份的線性乙烯基有機矽樹脂DMS-V05,15.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表4所示。 85.0 parts by weight of a linear vinyl organic oxime resin DMS-V05, 15.0 parts by weight of a vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight of cerium fine powder 525, dissolved in toluene In the solvent, and adjust to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 4.
實施例9 Example 9
將85.0重量份的環形乙烯基有機矽樹脂WD-V4,15.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表4所示。 85.0 parts by weight of the cyclic vinyl organic fluorene resin WD-V4, 15.0 parts by weight of the vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of the radical initiator DCP, 233.0 parts by weight of the cerium fine powder 525, dissolved in toluene In the solvent, and adjust to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 4.
比較例10 Comparative Example 10
將15.0重量份的三維無規網狀結構MQ乙烯基有機矽樹脂DY-VMQ102,85.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表4所示。 15.0 parts by weight of a three-dimensional random network structure MQ vinyl organic resin DY-VMQ102, 85.0 parts by weight of a vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight of ruthenium The fine powder 525 was dissolved in a toluene solvent and adjusted to a suitable viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 4.
比較例11 Comparative Example 11
將15.0重量份的線性乙烯基有機矽樹脂DMS-V05,85.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶 劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表4所示。 15.0 parts by weight of a linear vinyl organic oxime resin DMS-V05, 85.0 parts by weight of a vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight of cerium fine powder 525, dissolved in toluene In the solvent, and adjust to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 4.
比較例12 Comparative Example 12
將15.0重量份的環形乙烯基有機矽樹脂WD-V4,85.0重量份的乙烯基改性聚苯醚樹脂SA9000,3.0重量份的自由基引發劑DCP,2330重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表4所示。 15.0 parts by weight of the cyclic vinyl organic fluorene resin WD-V4, 85.0 parts by weight of the vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of the radical initiator DCP, 2330 parts by weight of the cerium fine powder 525, dissolved in toluene In the solvent, and adjust to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 4.
通過表4可以看出,將實施例7~9分別與比較例10~12相 比,實施例7~9所製備的基材在沒有使用阻燃劑的條件下,能夠實現無鹵無磷V-0級阻燃,而比較例10~12卻不能實現V-0級阻燃;此外,相對於比較例10~12,實施例7~9所製備的基材具有更低的介質常數及介質損耗,說明本發明通過採用乙烯基有機矽樹脂作為主體樹脂,乙烯基改性聚苯醚作為基板層間黏合力改性劑,相對於採用乙烯基改性聚苯醚樹脂作為主體樹脂,乙烯基有機矽樹脂作為交聯劑,其所製備的基材具有更優異的介電常數及介質損耗性能,並能實現無鹵無磷V-0級阻燃。 As can be seen from Table 4, Examples 7-9 are respectively compared with Comparative Examples 10-12. In comparison, the substrates prepared in Examples 7 to 9 can achieve halogen-free and phosphorus-free V-0 flame retardant without using a flame retardant, while the comparative examples 10-12 cannot achieve V-0 flame retardant. Further, with respect to Comparative Examples 10 to 12, the substrates prepared in Examples 7 to 9 had lower dielectric constants and dielectric loss, indicating that the present invention uses a vinyl organic oxime resin as a host resin, vinyl modified poly As a binder for interlaminar adhesion between substrates, phenyl ether has a more excellent dielectric constant than a vinyl-modified polyphenylene ether resin as a host resin and a vinyl organic oxime resin as a crosslinking agent. Dielectric loss performance, and can achieve halogen-free and phosphorus-free V-0 flame retardant.
實施例10 Example 10
將90.0重量份的三維無規網狀結構MQ乙烯基有機矽樹脂DY-VMQ102,10.0重量份的乙烯基改性聚苯醚樹脂OPE-2ST,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表5所示。 90.0 parts by weight of a three-dimensional random network structure MQ vinyl organic resin DY-VMQ102, 10.0 parts by weight of a vinyl modified polyphenylene ether resin OPE-2ST, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight The fine powder 525 is dissolved in toluene solvent and adjusted to a suitable viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 5.
實施例11 Example 11
將80.0重量份的線性乙烯基有機矽樹脂DMS-V05,20.0重量份的乙烯基改性聚苯醚樹脂OPE-2ST,2.0重量份的自由基引發劑DCP,185.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度 的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表5所示。 80.0 parts by weight of linear vinyl organic oxime resin DMS-V05, 20.0 parts by weight of vinyl modified polyphenylene ether resin OPE-2ST, 2.0 parts by weight of free radical initiator DCP, 185.0 parts by weight of bismuth micropowder 525, dissolved In toluene solvent, and adjusted to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 5.
實施例12 Example 12
將70.0重量份的環型乙烯基有機矽樹脂WD-V4,30.0重量份的乙烯基改性聚苯醚樹脂OPE-2ST,1.0重量份的自由基引發劑DCP,155.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表5所示。 70.0 parts by weight of a cyclic vinyl organic fluorene resin WD-V4, 30.0 parts by weight of a vinyl modified polyphenylene ether resin OPE-2ST, 1.0 part by weight of a radical initiator DCP, 155.0 parts by weight of bismuth fine powder 525, Dissolve in toluene solvent and adjust to suitable viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 5.
實施例13 Example 13
將85.0重量份的三維無規網狀結構MQ乙烯基有機矽樹脂DY-VMQ102,15.0重量份的乙烯基改性聚苯醚樹脂OPE-2ST,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表5所示。 85.0 parts by weight of a three-dimensional random network structure MQ vinyl organic resin DY-VMQ102, 15.0 parts by weight of a vinyl modified polyphenylene ether resin OPE-2ST, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight The fine powder 525 is dissolved in toluene solvent and adjusted to a suitable viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 5.
實施例14 Example 14
將85.0重量份的線性乙烯基有機矽樹脂DMS-V05,15.0重量份的乙烯基改性聚苯醚樹脂OPE-2ST,2.0重量份的自由基引發劑DCP,185.0重 量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表5所示。 85.0 parts by weight of linear vinyl organic oxime resin DMS-V05, 15.0 parts by weight of vinyl modified polyphenylene ether resin OPE-2ST, 2.0 parts by weight of free radical initiator DCP, 185.0 parts by weight of bismuth micropowder 525, dissolved In toluene solvent, and adjusted to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 5.
實施例15 Example 15
將85.0重量份的環型乙烯基有機矽樹脂WD-V4,15.0重量份的乙烯基改性聚苯醚樹脂OPE-2ST,1.0重量份的自由基引發劑DCP,155.0重量份的矽微粉525,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表5所示。 85.0 parts by weight of a cyclic vinyl organic fluorene resin WD-V4, 15.0 parts by weight of a vinyl-modified polyphenylene ether resin OPE-2ST, 1.0 part by weight of a radical initiator DCP, and 155.0 parts by weight of bismuth fine powder 525, Dissolve in toluene solvent and adjust to suitable viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 5.
實施例16 Example 16
將80.0重量份的三維無規網狀結構MQ乙烯基有機矽樹脂DY-VMQ102,20.0重量份的乙烯基改性聚苯醚樹脂OPE-2ST,3.0重量份的自由基引發劑DCP,233.0重量份的矽微粉SC-2300SVJ,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表5所示。 80.0 parts by weight of a three-dimensional random network structure MQ vinyl organic resin DY-VMQ102, 20.0 parts by weight of a vinyl modified polyphenylene ether resin OPE-2ST, 3.0 parts by weight of a radical initiator DCP, 233.0 parts by weight The bismuth micropowder SC-2300SVJ is dissolved in toluene solvent and adjusted to a suitable viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 5.
實施例17 Example 17
將80.0重量份的線性乙烯基有機矽樹脂DMS-V05,20.0重量份的乙烯基改性聚苯醚樹脂OPE-2ST,2.0重量份的自由基引發劑DCP,185.0重量份的矽微粉SC-2300SVJ,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表5所示。 80.0 parts by weight of linear vinyl organic oxime resin DMS-V05, 20.0 parts by weight of vinyl modified polyphenylene ether resin OPE-2ST, 2.0 parts by weight of free radical initiator DCP, 185.0 parts by weight of bismuth micropowder SC-2300SVJ , dissolved in toluene solvent and adjusted to the appropriate viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 5.
實施例18 Example 18
將80.0重量份的環型乙烯基有機矽樹脂WD-V4,20.0重量份的乙烯基改性聚苯醚樹脂OPE-2ST,1.0重量份的自由基引發劑DCP,155.0重量份的矽微粉SC-2300SVJ,溶解於甲苯溶劑中,並調節至適合黏度。用2116玻纖布浸潤樹脂膠液,過夾軸控制適合單重,並在烘箱中乾燥,除去甲苯溶劑,製得2116預浸料。將4張2116預浸料重疊,上下兩面配以1OZ厚度的銅箔,在壓機中真空層壓固化90min,固化壓力為50kg/cm2,固化溫度為200℃,製得高頻電路基板。基材綜合性能如表5所示。 80.0 parts by weight of a cyclic vinyl organic fluorene resin WD-V4, 20.0 parts by weight of a vinyl modified polyphenylene ether resin OPE-2ST, 1.0 part by weight of a radical initiator DCP, and 155.0 parts by weight of a bismuth micropowder SC- 2300SVJ, dissolved in toluene solvent and adjusted to a suitable viscosity. The 2116 prepreg was prepared by infiltrating the resin glue with 2116 glass fiber cloth, controlling the single weight by the clamp shaft, drying in an oven, and removing the toluene solvent. Four sheets of 2116 prepreg were overlapped, and the upper and lower sides were coated with a copper foil of 1 OZ thickness, vacuum-laminated and cured for 90 minutes in a press, the curing pressure was 50 kg/cm 2 , and the curing temperature was 200 ° C to obtain a high-frequency circuit substrate. The overall performance of the substrate is shown in Table 5.
通過表5可以看出,本發明通過採用乙烯基有機矽樹脂作為主體樹脂,乙烯基改性聚苯醚作為基板層間黏合力改性劑,其所製備的基材具有好的基材層間黏合力,能夠滿足覆銅板層間黏合力的要求,並具有低介質常數及低介質損耗,同時能夠實現無鹵無磷V-0級阻燃,非常適合製備高頻電子設備的電路基板。 It can be seen from Table 5 that the present invention adopts a vinyl organic fluorene resin as a host resin and a vinyl modified polyphenylene ether as a substrate interlayer adhesion modifier, and the prepared substrate has a good adhesion between the substrates. It can meet the requirements of adhesion between layers of CCL, has low dielectric constant and low dielectric loss, and can realize halogen-free and phosphorus-free V-0 flame retardant. It is very suitable for the circuit board of high-frequency electronic equipment.
申請人聲明,本發明通過上述實施例來說明本發明的詳細方法,但本發明並不侷限於上述詳細方法,即不意味著本發明必須依賴上述詳細方法才能實施。所屬技術領域的技術人員應該明瞭,對本發明的任何改進,對本發明產品各原料的均等置換及輔助成分的添加、具體方式的選擇等,均落在本發明的保護範圍及公開範圍之內。 The Applicant declares that the present invention is described by the above-described embodiments, but the present invention is not limited to the above detailed methods, that is, it does not mean that the present invention must be implemented by the above detailed methods. It should be apparent to those skilled in the art that any modification of the present invention, the equal replacement of the raw materials of the products of the present invention, the addition of auxiliary components, the selection of specific means, etc., are all within the scope of the present invention and the scope of the disclosure.
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