TWI643227B - Arc suppression device and arc suppression method - Google Patents
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Abstract
一種電弧抑制裝置包含交流/直流轉換器、開關、電阻器與控制器。開關耦接於交流/直流轉換器與電漿室之間。電阻器並聯耦接開關。控制器耦接開關。交流/直流轉換器用以將交流電壓轉換為直流電壓以提供至電漿室。控制器用以偵測電漿室接收之電漿電流之斜率。當控制器判斷電漿電流之斜率大於第一斜率門檻值時,控制器控制開關電性隔離交流/直流轉換器與電漿室以透過電阻器將電漿電流降低至第一電流值。An arc suppression device includes an AC/DC converter, a switch, a resistor, and a controller. The switch is coupled between the AC/DC converter and the plasma chamber. The resistor is coupled in parallel with the switch. The controller is coupled to the switch. An AC/DC converter is used to convert the AC voltage to a DC voltage to provide to the plasma chamber. The controller is configured to detect the slope of the plasma current received by the plasma chamber. When the controller determines that the slope of the plasma current is greater than the first slope threshold, the controller controls the switch to electrically isolate the AC/DC converter from the plasma chamber to reduce the plasma current to a first current value through the resistor.
Description
本案是有關於電弧抑制技術,且特別是有關於一種連續輸出能量的電弧抑制裝置與電弧抑制方法。This case relates to arc suppression technology, and in particular to an arc suppression device and an arc suppression method for continuously outputting energy.
於電漿製程中,當電漿室內發生電弧時,容易導致製程的良率不佳。然而,為了消除電漿室內的電弧而斷開輸出至電漿室的電源,將會產生能量不連續的問題。此外,若透過多個開關元件控制電源的輸出,則操作方式變得較為複雜。In the plasma process, when an arc occurs in the plasma chamber, the yield of the process is likely to be poor. However, in order to eliminate the arc in the plasma chamber and turn off the power output to the plasma chamber, there is a problem of energy discontinuity. Further, if the output of the power source is controlled by a plurality of switching elements, the operation mode becomes complicated.
本揭示內容的一態樣是提供一種電弧抑制裝置,其包含交流/直流轉換器、開關、電阻器與控制器。開關耦接於交流/直流轉換器與電漿室之間。電阻器並聯耦接開關。控制器耦接開關。交流/直流轉換器用以將交流電壓轉換為直流電壓以提供至電漿室。控制器用以偵測電漿室接收之電漿電流之斜率。當控制器判斷電漿電流之斜率大於第一斜率門檻值時,控制器控制開關電性隔離交流/直流轉換器與電漿室以透過電阻器將電漿電流降低至第一電流值。One aspect of the present disclosure is to provide an arc suppression device that includes an AC/DC converter, a switch, a resistor, and a controller. The switch is coupled between the AC/DC converter and the plasma chamber. The resistor is coupled in parallel with the switch. The controller is coupled to the switch. An AC/DC converter is used to convert the AC voltage to a DC voltage to provide to the plasma chamber. The controller is configured to detect the slope of the plasma current received by the plasma chamber. When the controller determines that the slope of the plasma current is greater than the first slope threshold, the controller controls the switch to electrically isolate the AC/DC converter from the plasma chamber to reduce the plasma current to a first current value through the resistor.
本揭示內容的另一態樣是提供一種電弧抑制方法,其包含以下步驟。透過控制器,當判斷電漿室接收之電漿電流之斜率大於第一斜率門檻值時,控制開關電性隔離交流/直流轉換器與電漿室以透過電阻器將電漿電流降低至第一電流值。開關電性耦接於交流/直流轉換器與電漿室之間,電阻器並聯耦接開關。Another aspect of the present disclosure is to provide an arc suppression method comprising the following steps. Through the controller, when it is determined that the slope of the plasma current received by the plasma chamber is greater than the first slope threshold, the control switch electrically isolates the AC/DC converter from the plasma chamber to reduce the plasma current to the first through the resistor. Current value. The switch is electrically coupled between the AC/DC converter and the plasma chamber, and the resistor is coupled in parallel with the switch.
綜上所述,當電弧發生時,電弧抑制裝置可透過電阻器降低輸出至電漿室的電漿電流至第一電流值以消除電弧。此外,由於電弧抑制裝置並未中斷輸出至電漿室(亦即並未將電漿電流降至零),因此當電弧消除後電弧抑制裝置可快速地恢復電漿室正常操作。In summary, when an arc occurs, the arc suppression device can reduce the plasma current outputted to the plasma chamber to a first current value through the resistor to eliminate the arc. In addition, since the arc suppression means does not interrupt the output to the plasma chamber (i.e., the plasma current is not reduced to zero), the arc suppression device can quickly resume normal operation of the plasma chamber when the arc is removed.
以下將以實施方式對上述之說明作詳細的描述,並對本揭示內容之技術方案提供更進一步的解釋。The above description will be described in detail in the following embodiments, and further explanation of the technical solutions of the present disclosure is provided.
以下揭示提供許多不同實施例或例證用以實施本發明的特徵。本揭示在不同例證中可能重複引用數字符號且/或字母,這些重複皆為了簡化及闡述,其本身並未指定以下討論中不同實施例且/或配置之間的關係。The following disclosure provides many different embodiments or features for carrying out the invention. The disclosure may repeatedly recite numerical symbols and/or letters in the various examples, which are for simplicity and elaboration, and do not in themselves specify the relationship between the various embodiments and/or configurations in the following discussion.
於實施方式與申請專利範圍中,除非內文中對於冠詞有所特別限定,否則「一」與「該」可泛指單一個或複數個。將進一步理解的是,本文中所使用之「包含」、「包括」、「具有」及相似詞彙,指明其所記載的特徵、區域、整數、步驟、操作、元件與/或組件,但不排除其所述或額外的其一個或多個其它特徵、區域、整數、步驟、操作、元件、組件,與/或其中之群組。In the scope of the embodiments and claims, "one" and "the" may mean a single or plural unless the context specifically dictates the articles. It will be further understood that the terms "comprising", "comprising", "comprising", and "the" One or more of its other features, regions, integers, steps, operations, elements, components, and/or groups thereof.
當一元件被稱為「連接」或「耦接」至另一元件時,它可以為直接連接或耦接至另一元件,又或是其中有一額外元件存在。相對的,當一元件被稱為「直接連接」或「直接耦接」至另一元件時,其中是沒有額外元件存在。When an element is referred to as being "connected" or "coupled" to another element, it can be either directly connected or coupled to the other element or an additional element. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, no additional element is present.
關於本文中所使用之「約」、「大約」或「大致約」一般通常係指數值之誤差或範圍約百分之二十以內,較好地是約百分之十以內,而更佳地則是約百分五之以內。文中若無明確說明,其所提及的數值皆視作為近似值,即如「約」、「大約」或「大致約」所表示的誤差或範圍。As used herein, "about", "about" or "approximately" is generally within an error or range of about 20% of the index value, preferably within about 10%, and more preferably It is about five percent. Unless otherwise stated, the numerical values referred to are regarded as approximations, that is, the errors or ranges indicated by "about", "about" or "approximately".
關於本文中所使用之「第一」、「第二」、…等,並非特別指稱次序或順位的意思,亦非用以限定本案,其僅僅是為了區別以相同技術用語描述的元件或操作而已。The terms “first”, “second”, etc. used in this document are not specifically meant to refer to the order or order, nor are they used to limit the case, but merely to distinguish between components or operations described in the same technical terms. .
請參考第1圖,第1圖係根據本揭示內容一實施例繪示之電弧抑制裝置100之示意圖。電弧抑制裝置100包 含交流/直流轉換器(AC to DC converter)110、開關SW、電阻器R與控制器120。開關SW耦接於交流/直流轉換器110與電漿室150之間,電阻器R並聯耦接開關SW,控制器120耦接開關SW。交流/直流轉換器110用以將交流電源AC產生的交流電壓轉換為直流電壓以提供至電漿室150。於一實施例中,電漿室150的電漿電壓(如後第3A圖的電漿電壓V)關聯於交流/直流轉換器110輸出的直流電壓。例如,電漿室150的電漿電壓為經濾波後的直流電壓。Please refer to FIG. 1 , which is a schematic diagram of an arc suppression device 100 according to an embodiment of the present disclosure. The arc suppression device 100 includes an AC to DC converter 110, a switch SW, a resistor R, and a controller 120. The switch SW is coupled between the AC/DC converter 110 and the plasma chamber 150, the resistor R is coupled in parallel with the switch SW, and the controller 120 is coupled to the switch SW. The AC/DC converter 110 is configured to convert an AC voltage generated by the AC power source AC into a DC voltage to be supplied to the plasma chamber 150. In one embodiment, the plasma voltage of the plasma chamber 150 (such as the plasma voltage V of FIG. 3A later) is associated with the DC voltage output by the AC/DC converter 110. For example, the plasma voltage of the plasma chamber 150 is a filtered DC voltage.
操作上,請同時參考第2圖、第3A圖、第3B圖、第4A圖、第4B圖與第4C圖。第2圖係根據本案一實施例繪示之電弧抑制方法200流程圖。電弧抑制方法200具有多個步驟S201~S203,其可應用於如第1圖所示的電弧抑制裝置100。然熟習本案之技藝者應瞭解到,在上述實施例中所提及的步驟,除特別敘明其順序者外,均可依實際需要調整其前後順序,甚至可同時或部分同時執行。For operation, please refer to Fig. 2, Fig. 3A, Fig. 3B, Fig. 4A, Fig. 4B and Fig. 4C. 2 is a flow chart of an arc suppression method 200 according to an embodiment of the present disclosure. The arc suppression method 200 has a plurality of steps S201 to S203 which are applicable to the arc suppression device 100 as shown in Fig. 1. Those skilled in the art should understand that the steps mentioned in the above embodiments can be adjusted according to actual needs, and can be performed simultaneously or partially simultaneously, unless the order is specifically stated.
以下段落將依序針對普通電弧以及嚴重電弧等情況說明。其中,針對普通電弧或嚴重電弧的情況,控制器120可選擇性地設置為偵測電漿電流Ip、電漿電壓V或同時偵測上述兩者,以完成消除電弧的操作。相關操作將於以下段落詳細說明。The following paragraphs will be described in sequence for normal arcs and severe arcing. Wherein, for the case of ordinary arc or severe arc, the controller 120 can be selectively configured to detect the plasma current Ip, the plasma voltage V or both of the above to complete the arc elimination operation. Related operations are detailed in the following paragraphs.
以下說明普通電弧發生的情況。於一實施例中,控制器120用以偵測電漿室150接收之電漿電流Ip的斜率。當電漿室150於時間t0時發生電弧,電漿電壓V開始下降(如第4A圖所示),電漿電流Ip的斜率上升(如第4B圖所示)。於步驟S201,控制器120判斷電漿室150接收之電漿電流Ip的斜率是否大於第一斜率門檻值。於一實施例中,第一斜率門檻值可設計為普通電弧發生時的電漿電流Ip的斜率。The following describes the occurrence of a normal arc. In one embodiment, the controller 120 is configured to detect a slope of the plasma current Ip received by the plasma chamber 150. When the plasma chamber 150 arcs at time t0 and the plasma voltage V begins to decrease (as shown in Fig. 4A), the slope of the plasma current Ip rises (as shown in Fig. 4B). In step S201, the controller 120 determines whether the slope of the plasma current Ip received by the plasma chamber 150 is greater than the first slope threshold. In an embodiment, the first slope threshold value can be designed as the slope of the plasma current Ip when a normal arc occurs.
舉例而言,於時間t1,控制器120判斷電漿電流Ip的斜率大於第一斜率門檻值,則控制器120於步驟S202控制開關SW電性隔離交流/直流轉換器110與電漿室150以透過電阻器R將電漿電流Ip降低至第一電流值I1。換言之,當控制器120判斷電漿室150發生電弧而控制開關SW斷開,則大部分的功率消耗於電阻器R,電漿電流Ip於時間t1至t3之間下降至第一電流值I1以消除電弧。For example, at time t1, the controller 120 determines that the slope of the plasma current Ip is greater than the first slope threshold, the controller 120 controls the switch SW to electrically isolate the AC/DC converter 110 from the plasma chamber 150 in step S202. The plasma current Ip is lowered to a first current value I1 through the resistor R. In other words, when the controller 120 determines that the plasma chamber 150 is arcing and the control switch SW is turned off, most of the power is consumed by the resistor R, and the plasma current Ip drops to the first current value I1 between time t1 and t3. Eliminate the arc.
或者,於另一實施例中,控制器120更用以偵測電漿室150接收之電漿電壓V。於步驟S201,控制器120判斷電漿室150接收之電漿電流Ip的斜率是否大於第一斜率門檻值,以及電漿電壓V是否小於第一電壓門檻值。在一些實施例中,第一電壓門檻值的範圍可設置為11~100伏特(V),但本揭示內容不以此為限。舉例而言,於時間t1,控制器120判斷電漿電流Ip的斜率大於第一斜率門檻值以及電漿電壓V小於第一電壓門檻值,則控制器120於步驟S202控制開關SW電性隔離交流/直流轉換器110與電漿室150以透過電阻器R將電漿電流Ip降低至第一電流值I1。Alternatively, in another embodiment, the controller 120 is further configured to detect the plasma voltage V received by the plasma chamber 150. In step S201, the controller 120 determines whether the slope of the plasma current Ip received by the plasma chamber 150 is greater than the first slope threshold value, and whether the plasma voltage V is less than the first voltage threshold value. In some embodiments, the first voltage threshold may be set to a range of 11 to 100 volts (V), but the disclosure is not limited thereto. For example, at time t1, the controller 120 determines that the slope of the plasma current Ip is greater than the first slope threshold and the plasma voltage V is less than the first voltage threshold, the controller 120 controls the switch SW to electrically isolate the alternating current in step S202. The /DC converter 110 and the plasma chamber 150 reduce the plasma current Ip to the first current value I1 with the transmission resistor R.
於步驟S203,經過第一時間(例如時間t1至t4期間)後,控制器120控制開關SW電性連接交流/直流轉換器110與電漿室150以調整電漿電流Ip至第二電流值I2。如第4B圖所示,第二電流值I2大於第一電流值I1。In step S203, after the first time (for example, during the period t1 to t4), the controller 120 controls the switch SW to electrically connect the AC/DC converter 110 and the plasma chamber 150 to adjust the plasma current Ip to the second current value I2. . As shown in FIG. 4B, the second current value I2 is greater than the first current value I1.
如此一來,當電弧發生時,電弧抑制裝置100可降低透過電阻器R輸出至電漿室150的電漿電流Ip至第一電流值I1以消除電弧。此外,由於電弧抑制裝置100並未中斷輸出至電漿室150(亦即並未將電漿電流Ip降至零),因此當電弧消除後電弧抑制裝置100可快速地恢復電漿室150正常操作。As such, when the arc occurs, the arc suppression device 100 can reduce the plasma current Ip output to the plasma chamber 150 through the resistor R to the first current value I1 to eliminate the arc. In addition, since the arc suppression device 100 does not interrupt the output to the plasma chamber 150 (ie, the plasma current Ip is not reduced to zero), the arc suppression device 100 can quickly resume normal operation of the plasma chamber 150 after the arc is eliminated. .
以下說明嚴重電弧發生的情況。於另一實施例中,於步驟S201,控制器120判斷電漿室150接收之電漿電流Ip的斜率是否大於第二斜率門檻值,其中第二斜率門檻值大於第一斜率門檻值。舉例而言,於時間t1,控制器120判斷電漿電流Ip的斜率大於第二斜率門檻值(表示電漿室150發生嚴重電弧),則控制器120於步驟S202控制開關SW電性隔離交流/直流轉換器110與電漿室150並且斷開交流/直流轉換器110以快速消除電弧。須說明的是,相較於普通電弧的情形,於本實施例中,當控制器120判斷嚴重電弧發生(亦即電漿電流Ip的斜率大於第二斜率門檻值)時,控制器120更控制開關SW來斷開交流/直流轉換器110,以有效地消除嚴重電弧。The following describes the situation of severe arcing. In another embodiment, in step S201, the controller 120 determines whether the slope of the plasma current Ip received by the plasma chamber 150 is greater than a second slope threshold value, wherein the second slope threshold value is greater than the first slope threshold value. For example, at time t1, the controller 120 determines that the slope of the plasma current Ip is greater than the second slope threshold (indicating that the plasma chamber 150 is severely arced), the controller 120 controls the switch SW to electrically isolate the AC in step S202. The DC converter 110 is connected to the plasma chamber 150 and disconnects the AC/DC converter 110 to quickly eliminate the arc. It should be noted that, in the present embodiment, when the controller 120 determines that a severe arc occurs (that is, the slope of the plasma current Ip is greater than the second slope threshold), the controller 120 controls the controller 120. The switch SW is used to disconnect the AC/DC converter 110 to effectively eliminate severe arcing.
或者,於另一實施例中,控制器120更用以偵測電漿室150接收之電漿電壓V。於步驟S201,控制器120判斷電漿室150接收之電漿電流Ip的斜率是否大於第二斜率門檻值以及電漿電壓V是否小於第二電壓門檻值。於一些實施例中,第二電壓門檻值可設置為11~100伏特(V),並小於第一電壓門檻值。舉例而言,於時間t1,控制器120判斷電漿電流Ip的斜率大於第二斜率門檻值以及電漿電壓V小於第二電壓門檻值(表示電漿室150發生嚴重電弧),則控制器120於步驟S202控制開關SW電性隔離交流/直流轉換器110與電漿室150並且斷開交流/直流轉換器110以快速消除電弧。此外,相較於普通電弧的情形,於本實施例中,當控制器120判斷嚴重電弧發生(亦即電漿電流Ip的斜率大於第二斜率門檻值以及電漿電壓V小於第二電壓門檻值)時,控制器120更控制開關SW來斷開交流/直流轉換器110,以有效地消除嚴重電弧。Alternatively, in another embodiment, the controller 120 is further configured to detect the plasma voltage V received by the plasma chamber 150. In step S201, the controller 120 determines whether the slope of the plasma current Ip received by the plasma chamber 150 is greater than the second slope threshold value and whether the plasma voltage V is less than the second voltage threshold value. In some embodiments, the second voltage threshold can be set to 11 to 100 volts (V) and less than the first voltage threshold. For example, at time t1, the controller 120 determines that the slope of the plasma current Ip is greater than the second slope threshold and the plasma voltage V is less than the second voltage threshold (indicating that the plasma chamber 150 is severely arced), the controller 120 The switch SW is electrically isolated from the AC/DC converter 110 and the plasma chamber 150 in step S202 and the AC/DC converter 110 is turned off to quickly eliminate the arc. In addition, in the present embodiment, when the controller 120 determines that a severe arc occurs (ie, the slope of the plasma current Ip is greater than the second slope threshold value and the plasma voltage V is less than the second voltage threshold value). When the controller 120 further controls the switch SW to turn off the AC/DC converter 110 to effectively eliminate severe arcing.
於上述討論普通電弧或嚴重電弧的例子中,僅以控制器120單獨偵測電漿電流Ip或同時偵測電漿電流Ip與電漿電壓V的操作為例說明,但本案不依此為限。於各種實施例中,控制器120可分別地偵測電漿電流Ip或電漿電壓V,或同時偵測電漿電流Ip與電漿電壓V,以消除電弧。例如,在前述的步驟S201中,控制器120可僅偵測電漿電壓V,並比較電漿電壓V與第一電壓門檻值與/或第二電壓門檻值來消除電弧。利用電漿電壓V的偵測方式與前述例子相同,故於此不再重複贅述。因此,各種可適用於控制器120來偵測電漿電流Ip與/或電漿電壓V的設置方式皆為本案所涵蓋之範圍。In the above discussion of the case of the ordinary arc or the severe arc, only the operation of the plasma current Ip or the simultaneous detection of the plasma current Ip and the plasma voltage V by the controller 120 is taken as an example, but the present invention is not limited thereto. In various embodiments, the controller 120 can separately detect the plasma current Ip or the plasma voltage V, or simultaneously detect the plasma current Ip and the plasma voltage V to eliminate the arc. For example, in the foregoing step S201, the controller 120 may detect only the plasma voltage V and compare the plasma voltage V with the first voltage threshold and/or the second voltage threshold to eliminate the arc. The detection method using the plasma voltage V is the same as the foregoing example, and thus the description thereof will not be repeated here. Therefore, various settings that can be applied to the controller 120 to detect the plasma current Ip and/or the plasma voltage V are within the scope of the present disclosure.
須說明的是,於本實施例中,經過第一時間(例如時間t1至t4期間)後,控制器120控制開關SW電性連接交流/直流轉換器110與電漿室150,並開啟交流/直流轉換器110以調整電漿電流Ip至第二電流值I2。如第4B圖所示,由於交流/直流轉換器110需要一段時間(例如時間t4至t5期間)來啟動,因此電漿電流Ip於時間t5之後上升至第二電流值I2。此外,第二斜率門檻值可設計為嚴重電弧發生時的電漿電流Ip的斜率。It should be noted that, in this embodiment, after the first time (for example, during the period t1 to t4), the controller 120 controls the switch SW to electrically connect the AC/DC converter 110 and the plasma chamber 150, and turns on the AC/ The DC converter 110 adjusts the plasma current Ip to the second current value I2. As shown in FIG. 4B, since the AC/DC converter 110 takes a period of time (for example, during the period t4 to t5) to be started, the plasma current Ip rises to the second current value I2 after the time t5. In addition, the second slope threshold value can be designed as the slope of the plasma current Ip at the time of severe arcing.
於一實施例中,電弧抑制裝置100更包含電感電容(LC)電路130、140。電感電容(LC)電路130耦接於交流/直流轉換器110與控制器120之間並用以對交流/直流轉換器110轉換出的直流電壓進行濾波。電感電容(LC)電路140耦接於控制器120與電漿室150之間並用以抑制電漿電流Ip之斜率並產生電漿電壓V。In an embodiment, the arc suppression device 100 further includes inductor-capacitor (LC) circuits 130, 140. The inductor-capacitor (LC) circuit 130 is coupled between the AC/DC converter 110 and the controller 120 and is used to filter the DC voltage converted by the AC/DC converter 110. The inductor-capacitor (LC) circuit 140 is coupled between the controller 120 and the plasma chamber 150 and is configured to suppress the slope of the plasma current Ip and generate a plasma voltage V.
於一實施例中,電感電容(LC)電路130包含電感器L1與電容器C1,電感電容(LC)電路140包含電感器L2與電容器C2。交流/直流轉換器110具有第一端111與第二端112,開關SW具有第一端SW_1與第二端SW_2,電感器L1具有第一端L1_1與第二端L1_2,電容器C1具有第一端C1_1與第二端C1_2,電感器L2具有第一端L2_1與第二端L2_2,電容器C2具有第一端C2_1與第二端C2_2。In one embodiment, the inductor-capacitor (LC) circuit 130 includes an inductor L1 and a capacitor C1. The inductor-capacitor (LC) circuit 140 includes an inductor L2 and a capacitor C2. The AC/DC converter 110 has a first end 111 and a second end 112. The switch SW has a first end SW_1 and a second end SW_2. The inductor L1 has a first end L1_1 and a second end L1_2, and the capacitor C1 has a first end. C1_1 and the second end C1_2, the inductor L2 has a first end L2_1 and a second end L2_2, and the capacitor C2 has a first end C2_1 and a second end C2_2.
關於電感電容(LC)電路130的連接方式,電感器L1之第一端L1_1耦接交流/直流轉換器110之第一端111,電感器L1之第二端L1_2耦接開關SW之第一端SW_1與電阻器R的第一端R_1。電容器C1之第一端C1_1耦接電感器L1之第二端L1_2,電容器C1之第二端C1_2耦接交流/直流轉換器110之第二端112。The first end L1_1 of the inductor L1 is coupled to the first end 111 of the AC/DC converter 110, and the second end L1_2 of the inductor L1 is coupled to the first end of the switch SW. SW_1 and the first end R_1 of the resistor R. The first end C1_1 of the capacitor C1 is coupled to the second end L1_2 of the inductor L1, and the second end C1_2 of the capacitor C1 is coupled to the second end 112 of the AC/DC converter 110.
關於電感電容(LC)電路140的連接方式,電感器L2之第一端L2_1耦接開關SW之第二端SW_2,電感器L2之第二端L2_2耦接電漿室150之外殼151與接地端GND。電容器C2之第一端C2_1耦接電感器L2之第二端L2_2,電容器C2之第二端C2_2耦接交流/直流轉換器110之第二端112與電漿室150之靶材(target)152。The first end L2_1 of the inductor L2 is coupled to the second end SW_2 of the switch SW, and the second end L2_2 of the inductor L2 is coupled to the outer casing 151 and the ground of the plasma chamber 150. GND. The first end C2_1 of the capacitor C2 is coupled to the second end L2_2 of the inductor L2, and the second end C2_2 of the capacitor C2 is coupled to the second end 112 of the AC/DC converter 110 and the target 152 of the plasma chamber 150. .
須說明的是,於時間t2,由於流經電感器L2的電漿電流Ip續流而產生的反向電壓(如第4A圖所示)有助於消除電弧。It should be noted that at time t2, the reverse voltage (as shown in FIG. 4A) due to the freewheeling of the plasma current Ip flowing through the inductor L2 helps to eliminate the arc.
於一實施例中,電感器L1之電感值(約數百微亨利(μH))大於電感器L2之電感值(約數百微亨利(μH))。In one embodiment, the inductance of the inductor L1 (about several hundred microhenries (μH)) is greater than the inductance of the inductor L2 (about several hundred microhenries (μH)).
於一實施例中,電容器C1之電容值(約數十奈法拉(nF))大於電容器C2之電容值(約數奈法拉(nF))。In one embodiment, the capacitance of capacitor C1 (approximately tens of nanofarads (nF)) is greater than the capacitance of capacitor C2 (approximately Nefira (nF)).
實作上,開關SW可以是電晶體(例如絕緣閘極雙極性電晶體(Insulated gate bipolar transistor,IGBT),控制器120可以是微控制器(Microprocessor control unit,MCU)、可程式化邏輯陣列(Field-programmable gate array,FPGA),但本揭示內容不以此為限。In practice, the switch SW can be a transistor (eg, an insulated gate bipolar transistor (IGBT), and the controller 120 can be a microprocessor control unit (MCU), a programmable logic array ( Field-programmable gate array (FPGA), but the disclosure is not limited thereto.
綜上所述,當電弧發生時,電弧抑制裝置100可透過電阻器R降低輸出至電漿室150的電漿電流Ip至第一電流值I1以消除電弧。此外,由於電弧抑制裝置100並未中斷輸出至電漿室150(亦即並未將電漿電流Ip降至零),因此當電弧消除後電弧抑制裝置100可快速地恢復電漿室150正常操作。In summary, when an arc occurs, the arc suppression device 100 can reduce the plasma current Ip outputted to the plasma chamber 150 to the first current value I1 through the resistor R to eliminate the arc. In addition, since the arc suppression device 100 does not interrupt the output to the plasma chamber 150 (ie, the plasma current Ip is not reduced to zero), the arc suppression device 100 can quickly resume normal operation of the plasma chamber 150 after the arc is eliminated. .
雖然本案已以實施方式揭露如上,然其並非用以限定本案,任何熟習此技藝者,在不脫離本案之精神和範圍內,當可作各種之更動與潤飾,因此本案之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present case. Anyone skilled in the art can make various changes and refinements without departing from the spirit and scope of the case. Therefore, the scope of protection of this case is considered. The scope defined in the patent application is subject to change.
100‧‧‧電弧抑制裝置100‧‧‧Arc suppression device
110‧‧‧交流/直流轉換器110‧‧‧AC/DC converter
111、L1_1、C1_1、L2_1、C2_1、SW_1、R_1‧‧‧第一端111, L1_1, C1_1, L2_1, C2_1, SW_1, R_1‧‧‧ first end
112、L1_2、C1_2、L2_2、C2_2、SW_2、R_2‧‧‧第二端112, L1_2, C1_2, L2_2, C2_2, SW_2, R_2‧‧‧ second end
120‧‧‧控制器120‧‧‧ Controller
130、140‧‧‧電感電容電路130, 140‧‧‧Inductance and capacitance circuit
150‧‧‧電漿室150‧‧‧Plastic chamber
151‧‧‧外殼151‧‧‧Shell
152‧‧‧靶材152‧‧‧ targets
L1、L2‧‧‧電感器L1, L2‧‧‧ inductors
C1、C2‧‧‧電容器C1, C2‧‧‧ capacitor
R‧‧‧電阻器R‧‧‧Resistors
SW‧‧‧開關SW‧‧ switch
AC‧‧‧交流電源AC‧‧‧AC power supply
200‧‧‧電弧抑制方法200‧‧‧Arc suppression method
S201~S203‧‧‧步驟S201~S203‧‧‧Steps
Ip‧‧‧電漿電流Ip‧‧‧Electrical current
V‧‧‧電漿電壓V‧‧‧plasma voltage
t0、t1、t2、t3、t4、t5‧‧‧時間T0, t1, t2, t3, t4, t5‧‧‧ time
I1、I2‧‧‧電流值I1, I2‧‧‧ current value
為讓本揭示內容之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖示之說明如下: 第1圖係根據本揭示內容一實施例繪示之電弧抑制裝置之示意圖; 第2圖係根據本案一實施例繪示之電弧抑制方法流程圖; 第3A圖係根據本揭示內容一實施例繪示之電弧抑制裝置之操作示意圖; 第3B圖係根據本揭示內容一實施例繪示之電弧抑制裝置之操作示意圖; 第4A圖係繪示本揭示內容一實施例中對應第3A、3B圖之電弧抑制裝置之波形示意圖; 第4B圖係繪示本揭示內容一實施例中對應第3A、3B圖之電弧抑制裝置之波形示意圖;以及 第4C圖係繪示本揭示內容一實施例中對應第3A、3B圖之電弧抑制裝置之波形示意圖。The above and other objects, features, advantages and embodiments of the present disclosure will become more apparent and understood. 2 is a flow chart of an arc suppression method according to an embodiment of the present disclosure; FIG. 3A is a schematic diagram of operation of an arc suppression device according to an embodiment of the present disclosure; FIG. 3B is a diagram according to the disclosure. FIG. 4A is a schematic diagram showing the waveform of the arc suppression device corresponding to the 3A and 3B diagrams in the embodiment of the present disclosure; FIG. 4B is a schematic diagram showing an embodiment of the disclosure. The waveform diagram of the arc suppression device corresponding to the 3A and 3B diagrams; and the 4C diagram is a waveform diagram of the arc suppression device corresponding to the 3A and 3B diagrams in the embodiment of the present disclosure.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003037047A1 (en) * | 2001-10-22 | 2003-05-01 | Shibaura Mechatronics Corporation | Method for judging arc of glow discharger and high-frequency arc discharge suppressor |
TWI297902B (en) * | 2006-03-17 | 2008-06-11 | Delta Electronics Inc | Relay protection circuit and controlling method thereof having relatively better effectiveness for suppressing dc arc |
US7514936B2 (en) * | 2004-09-04 | 2009-04-07 | Applied Materials, Inc. | Detection and suppression of electrical arcing |
TWI327741B (en) * | 2005-05-06 | 2010-07-21 | Huttinger Elektronik Gmbh & Co Kg | Arc suppression arrangement and alternating voltage gas discharge excitation arrangement |
CN106735735A (en) * | 2017-02-20 | 2017-05-31 | 上海威特力焊接设备制造股份有限公司 | Arc device and method is received in a kind of pulse gas-shielded weldering |
-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003037047A1 (en) * | 2001-10-22 | 2003-05-01 | Shibaura Mechatronics Corporation | Method for judging arc of glow discharger and high-frequency arc discharge suppressor |
US7514936B2 (en) * | 2004-09-04 | 2009-04-07 | Applied Materials, Inc. | Detection and suppression of electrical arcing |
TWI327741B (en) * | 2005-05-06 | 2010-07-21 | Huttinger Elektronik Gmbh & Co Kg | Arc suppression arrangement and alternating voltage gas discharge excitation arrangement |
TWI297902B (en) * | 2006-03-17 | 2008-06-11 | Delta Electronics Inc | Relay protection circuit and controlling method thereof having relatively better effectiveness for suppressing dc arc |
CN106735735A (en) * | 2017-02-20 | 2017-05-31 | 上海威特力焊接设备制造股份有限公司 | Arc device and method is received in a kind of pulse gas-shielded weldering |
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