TWI639725B - Method and apparatus for uniform metallization on a substrate - Google Patents

Abstract

Apparatus and methods for uniform metallization on a substrate are disclosed. According to an embodiment of the invention, the apparatus for uniform metallization on the substrate comprises: an immersion cavity, at least one electrode, a substrate holding device, at least one ultrasonic or megasonic device, and a reflector and a first driving device. The immersion chamber holds the metal salt electrolyte. At least one electrode is coupled to at least one power source. The substrate holding device holds at least one substrate, and the conductive surface of the substrate faces one electrode and is electrically conducted through the substrate holding device. At least one ultrasonic or megasonic device and reflector are used to form a standing wave within the immersed cavity. The first driving device drives the substrate holding device to periodically vibrate, so that the substrate holding device passes through the entire standing wave sound field region, so that the substrate surface obtains a uniform sound energy intensity distribution during the accumulation time.

Description

Method and apparatus for uniform metallization on a substrate

The invention relates to a method and a device for metallizing a substrate in an electrolyte, in particular to a method for applying at least one ultrasonic or megasonic device in a substrate metallization device and combining the dynamic control mechanism for controlling the movement of the substrate to obtain a uniform surface of the substrate. The sonic energy, so as to achieve ultra-uniform deposition of the metal film in the electrolyte, and the film deposition rate is significantly improved compared with the conventional method.

In the manufacture of ultra-large integrated circuits, a layer of metal film is electrochemically deposited on an ultra-thin large resist seed layer to form a conductive line, which is usually carried out in an electrolyte environment. This deposition process can fill a via structure, a trench structure, or a hybrid structure of both structures. When these structures are filled, metallic copper is continuously deposited and a film is formed on the surface of the semiconductor wafer. The resulting uniformity of the copper film is critical because the subsequent process steps to remove excess copper (usually the planarization step CMP) require a high degree of uniformity of the copper film, resulting in a final output between the device and the device. Get the same electrical performance.

Currently, metallization in the electrolyte is also applied to fill TSV (Through Silicon Via), thus in 3-D Vertical conduction is made between the wafer and the wafer. In TSV applications, the orifice diameter is a few microns or more, the hole depth is hundreds of microns, and the TSV size is orders of magnitude larger than the size of a typical dual damascene process. In such a high aspect ratio, and the depth is close to the thickness of the wafer itself, filling the pore structure becomes a problem. Metal deposition systems used in typical dual damascene processes have a low deposition rate, typically only a few thousand angstroms per minute, which does not meet the efficiency of TSV fabrication.

To achieve a void-free in the deep pores and a bottom-to-up fill hole, various organic additives are added to the electrolyte to control the local deposition rate. These organic additive components are often broken down into by-products during the deposition process. The by-products of decomposition are concentrated in the plating solution and the filling performance is lowered. If these by-products are incorporated as impurities into the plating film, they become the core of the nucleation of the holes, rendering the reliability of the device ineffective. Therefore, in the deposition process, it is necessary to increase the chemical exchange rate near the deep pores, and accelerate the removal of fresh active ingredients and the removal of by-products after decomposition. In addition, since the deep holes have a high aspect ratio, the electrolyte flows through the orifices, creating eddy currents in the pores. Convection is difficult to carry out in the electrolyte fluid and vortex, and the transport of fresh compounds and decomposition by-products at the bottom of the electrolyte main fluid and pores is mainly carried out in a diffusion manner. For deep wells such as TSVs, there is a longer diffusion path that further limits compound exchange. Moreover, the slow diffusion process in the long path of the TSV hinders the increase in deposition rate, and manufacturing often requires high deposition rates to reduce costs. In electrochemical methods controlled by mass transfer, the maximum deposition rate is related to the limiting current density. Under certain electrolyte concentrations, the limiting current density is inversely proportional to the thickness of the diffusion double layer. The lower the thickness of the diffusion double layer, the higher the limiting current density, and the higher the deposition rate. Patent WO/2012/174732, PCT/CN2011/076262 discloses an apparatus and method for depositing a thin metal film on a semiconductor wafer using ultrasonic or megasonic waves to overcome the above problems.

In an electroplating bath using an ultrasonic or megasonic device, energy intensity testing was performed by using an acoustic sensor and other photo-acoustic detecting tools, and it was found that the distribution of waves along the length direction of the ultrasonic or megasonic device was uneven. If the semiconductor wafer is metallized in such a plating bath, the acoustic energy obtained at each point on the semiconductor wafer is different, resulting in a decrease in the uniformity of the deposited metal film on the semiconductor wafer.

Furthermore, in electroplating baths with sound fields, the wave energy is lost during propagation due to absorption of the walls of the trench and diffraction occurring around the additives and by-products. Therefore, the intensity of the acoustic energy in the vicinity of the sound source is different from the intensity of the acoustic energy in the region farther from the sound source. The standing wave is formed between two parallel planes and minimizes the energy loss of the waves in the plating bath, and the energy transfer occurs only between the nodes of the standing wave and the non-nodes. However, the energy intensity of the waves is different at their nodes and non-nodes, resulting in no uniform application of sonic energy to the semiconductor wafer. Furthermore, it is difficult to control the formation of the standing wave throughout the deposition of the metal thin film because the difficulty in adjusting the parallelism and the spacing between the two planes is difficult.

In summary, it is necessary to find a method for controlling the uniformity of metal film deposition by controlling the uniformity of the energy density distribution of sound waves, and the energy loss of sound waves in the plating bath is required to be minimized.

It is an object of the present invention to apply at least one ultrasonic or megasonic device to a substrate metallization apparatus to achieve high uniformity metal film deposition in an electrolyte, and the film deposition rate is significantly improved compared to conventional methods. In the present invention, the substrate is dynamically controlled, so that each point on the substrate passes through the entire sound field region during each motion period of the substrate, so that each point on the substrate is obtained during an accumulation time. The total sound energy is the same, and the deposition thickness is uniform while the deposited film grows rapidly.

According to an embodiment of the invention, the proposed device for uniform metallization on a substrate comprises: an immersion cavity, at least one electrode, a substrate holding device, at least one ultrasonic or megasonic device, and a reflector and a first driving device. The immersion chamber holds the metal salt electrolyte. At least one electrode is coupled to at least one power source. The substrate holding device holds at least one substrate, and the conductive surface of the substrate faces one electrode and is electrically conducted through the substrate holding device. At least one ultrasonic or megasonic device and reflector are used to form a standing wave within the immersed cavity. The first driving device drives the substrate holding device to periodically vibrate, so that the substrate holding device passes through the entire standing wave sound field region, so that the substrate surface obtains a uniform sound energy intensity distribution during the accumulation time.

According to an embodiment of the invention, the proposed device for uniform metallization on a substrate comprises: an immersion cavity, at least one electrode, a substrate holding device, at least one ultrasonic or megasonic device, and a first driving device. The immersion chamber holds the metal salt electrolyte. At least one electrode is coupled to at least one power source. The substrate holding device holds at least one substrate, and the conductive side of the substrate faces one electrode, and is guided by the substrate holding device Electricity. At least one ultrasonic or megasonic device is mounted on the sidewall of the immersion cavity for forming a sound field within the immersion cavity. The first driving device drives the substrate holding device to periodically vibrate, so that the substrate holding device passes through the entire sound field region, so that the surface of the substrate obtains a uniform distribution of sound energy intensity during the accumulation time.

According to an embodiment of the invention, the proposed device for uniform metallization on a substrate comprises: an immersion cavity, a substrate holding device, at least one ultrasonic or megasonic device, and a first driving device. The immersion chamber holds the metal salt electrolyte. The substrate holding device holds at least one substrate. At least one ultrasonic or megasonic device is mounted on the sidewall of the immersion cavity for forming a sound field within the immersion cavity. The first driving device drives the substrate holding device to periodically vibrate, so that the substrate holding device passes through the entire sound field region, so that the surface of the substrate obtains a uniform distribution of sound energy intensity during the accumulation time.

According to an embodiment of the invention, the proposed device for uniform metallization on a substrate comprises: an immersion cavity, a substrate holding device, at least one ultrasonic or megasonic device, and a reflector and a first driving device. The immersion chamber holds the metal salt electrolyte. The substrate holding device holds at least one substrate. At least one ultrasonic or megasonic device and a reflector for forming a standing wave in the immersed cavity. The first driving device drives the substrate holding device to periodically vibrate, so that the substrate holding device passes through the entire standing wave sound field region, so that the substrate surface obtains a uniform sound energy intensity distribution during the accumulation time.

According to an embodiment of the invention, the proposed method for uniform metallization on a substrate comprises: introducing a metal salt electrolyte into the immersed cavity; Transferring at least one substrate to the substrate holding device such that the conductive side of the substrate faces the electrode, the substrate holding device has electrical conductivity and is in electrical communication with the conductive layer of the substrate; loading the substrate with a first bias; loading a current to the electrode; opening Ultrasonic or megasonic device; driving the substrate holding device to periodically vibrate, so that the substrate holding device passes through the entire sound field; periodically changing the distance between the ultrasonic or megasonic device and the reflecting plate; turning off the ultrasonic or megasonic device, stopping the vibrating substrate And changing the distance between the ultrasonic or megasonic device and the reflector; loading the substrate with a second bias; moving the substrate out of the metal salt electrolyte.

According to an embodiment of the present invention, a method for uniformly metallizing on a substrate includes: introducing a metal salt electrolyte into the immersed cavity; transferring at least one substrate to the substrate holding device such that a conductive side of the substrate faces the electrode, The substrate holding device has electrical conductivity and is electrically connected to the conductive layer of the substrate; loading the substrate with a first bias voltage; loading a current to the electrode; opening the ultrasonic or megasonic device; driving the substrate holding device to periodically vibrate, causing the substrate holding device to pass The entire sound field area; the ultrasonic or megasonic device is turned off, the substrate is stopped; the second bias is applied to the substrate; and the substrate is removed from the metal salt electrolyte.

According to an embodiment of the invention, the proposed method for uniform metallization on a substrate comprises: introducing a metal salt electrolyte into the immersed cavity; transferring at least one substrate to the substrate holding device; opening the ultrasonic or megasonic device; driving the substrate to hold The device periodically vibrates to cause the substrate holding device to pass through the entire sound field region; the ultrasonic or megasonic device is turned off to stop vibrating the substrate; and the substrate is removed from the metal salt electrolyte.

According to an embodiment of the invention, the proposed method for uniform metallization on a substrate comprises: introducing a metal salt electrolyte into the immersed cavity; transferring at least one substrate to the substrate holding device; opening the ultrasonic or megasonic device; driving the substrate to hold The device periodically vibrates to cause the substrate holding device to pass through the entire sound field; periodically change the distance between the ultrasonic or megasonic device and the reflector; turn off the ultrasonic or megasonic device, stop vibrating the substrate, and stop changing the ultrasonic or megasonic device The distance between the reflectors; The substrate is removed from the metal salt electrolyte.

1004‧‧‧ ultrasonic device

2001a‧‧‧Substrate

2001b‧‧‧Substrate

2002a‧‧‧Electrode

2002b‧‧‧Electrode

2003‧‧‧Substrate holding device

2004‧‧‧Ultrasonic or megasonic devices

2011a‧‧‧ permeable layer

2011b‧‧‧ permeable layer

2012‧‧‧ Vertical mobile drive

2013‧‧‧Vertical vibration drive

2020‧‧‧Metal salt electrolyte

2021‧‧‧Immersion cavity

2024a‧‧‧Power supply

2024b‧‧‧Power supply

2040‧‧‧Sonic absorption layer

3001‧‧‧Substrate

3003‧‧‧Substrate holding device

3004‧‧‧Ultrasonic or megasonic devices

3017‧‧‧Rotary drive

3020‧‧‧Metal salt electrolyte

3021‧‧‧Immersion cavity

3040‧‧‧Sonic absorption layer

4001‧‧‧Substrate

4003‧‧‧Substrate holding device

4004‧‧‧Ultrasonic or megasonic devices

4020‧‧‧Metal salt electrolyte

4021‧‧‧Immersion cavity

4040‧‧‧ slope

5001‧‧‧Substrate

5004‧‧‧Ultrasonic or megasonic devices

5005‧‧‧reflector

6001a‧‧‧Substrate

6001b‧‧‧Substrate

6002a‧‧‧electrode

6002b‧‧‧electrode

6003‧‧‧Sheet holding device

6004‧‧‧Ultrasonic or megasonic devices

6005‧‧‧reflector

6012‧‧‧Vertical mobile drive

6013‧‧‧Vertical vibration drive

6020‧‧‧Metal salt electrolyte

6021‧‧‧Immersion cavity

6024a‧‧‧Power supply

6024b‧‧‧Power supply

7001‧‧‧Substrate

7003‧‧‧Substrate holding device

7004‧‧‧ Ultrasonic or megasonic devices

7005‧‧‧reflector

7013‧‧‧Vertical vibration drive

7020‧‧‧Metal salt electrolyte

7021‧‧‧Immersion cavity

8001‧‧‧Substrate

8003‧‧‧Substrate holding device

8004‧‧‧ Ultrasonic or megasonic devices

8005‧‧‧reflector

8013‧‧‧Vertical vibration drive

8015‧‧‧Vibration drive

8020‧‧‧Metal salt electrolyte

8021‧‧‧Immersion cavity

9001‧‧‧Substrate

9002‧‧‧electrode

9003‧‧‧Substrate holding device

9004‧‧‧ Ultrasonic or megasonic devices

9005‧‧‧reflector

9013‧‧‧Vertical vibration drive

9020‧‧‧Metal salt electrolyte

9021‧‧‧Immersion cavity

9024‧‧‧Power supply

9030‧‧‧Connecting components

9033‧‧‧Rotary actuator

9036‧‧‧Rotating components

9038‧‧‧ gas pipeline

10004‧‧‧ Ultrasonic or megasonic devices

10005‧‧‧reflector

11001‧‧‧Substrate

11004‧‧‧Ultrasonic or megasonic devices

11005‧‧‧reflector

12001a‧‧‧Substrate

12001b‧‧‧Substrate

12002a‧‧‧electrode

12002b‧‧‧Electrode

12003‧‧‧Substrate holding device

12004‧‧‧Ultrasonic or megasonic devices

12005‧‧‧reflector

12006‧‧‧Vibration driver

12007‧‧‧ Bellows components

12013‧‧‧Vertical vibration drive

12020‧‧‧Metal salt electrolyte

12021‧‧‧Immersion cavity

12024a‧‧‧Power supply

12024b‧‧‧Power supply

13004‧‧‧ Ultrasonic or megasonic devices

13005‧‧‧reflector

13006‧‧‧Vibration driver

13007‧‧‧ Bellows components

14005‧‧‧reflector

14050‧‧‧solid board

14051‧‧‧Air gap

14052‧‧‧solid board

14053‧‧‧ sealing ring

15001a‧‧‧Substrate

15001b‧‧‧Substrate

15003‧‧‧Substrate holding device

15004‧‧‧Ultrasonic or megasonic devices

15013‧‧‧Vertical vibration drive

15020‧‧‧Metal salt electrolyte

15021‧‧‧Immersion cavity

Figure 1 discloses a schematic diagram of the distribution of acoustic energy intensity in the acoustic region in front of the ultrasonic device.

2A and 2B show schematic views of an embodiment of a uniform metallization apparatus on a substrate.

Figure 3 discloses a schematic diagram of yet another embodiment of a uniform metallization apparatus on a substrate.

Figure 4 discloses a schematic diagram of yet another embodiment of a uniform metallization apparatus on a substrate.

5A and 5B show a schematic diagram of the distribution of the intensity of the acoustic energy in the acoustic region between the ultrasonic or megasonic device and the reflector, and FIG. 5C reveals the acoustic energy at any point in the acoustic region between the ultrasonic or megasonic device and the reflector. Schematic diagram of the intensity.

6A and 6B show schematic views of an embodiment of a uniform metallization apparatus on a substrate.

Figure 7 discloses a schematic diagram of yet another embodiment of a uniform metallization apparatus on a substrate.

Figure 8 discloses a schematic diagram of yet another embodiment of a uniform metallization apparatus on a substrate.

Figure 9 discloses a schematic view of yet another embodiment of a uniform metallization device on a substrate.

Fig. 10A discloses a schematic diagram of the change of the acoustic energy intensity in the acoustic region between the ultrasonic or megasonic device and the reflector as the distance between the ultrasonic or megasonic device and the reflector changes, and Fig. 10B discloses the ultrasonic or megasonic device. A schematic representation of the acoustic energy intensity at any point in the acoustic region between the ultrasonic or megasonic device and the reflector when the distance between the reflector and the reflector is changed.

11A and 11B are schematic views showing the movement of the substrate along the Z axis and the movement of the reflecting plate in the X' direction.

12A through 12C illustrate schematic views of yet another embodiment of a uniform metallization apparatus on a substrate.

Figure 13 discloses a schematic diagram of yet another embodiment of a uniform metallization apparatus on a substrate.

Figure 14 discloses a schematic view of an embodiment of a reflector.

Figure 15 discloses a schematic view of yet another embodiment of a uniform metallization apparatus on a substrate.

The details of the technical contents, structural features, objects and effects of the present invention will be described in detail below with reference to the embodiments.

Figure 1 discloses a schematic diagram of the distribution of acoustic energy intensity in the acoustic region in front of the ultrasonic device. The ultrasonic device 1004 has a strip shape. The schematic diagram of the acoustic energy intensity distribution shown in Fig. 1 is obtained by a hydrophone test in which a dark area represents a high sound energy intensity and a bright area represents a low sound energy intensity. The distribution of the acoustic energy intensity from the center of the ultrasonic device 1004 to the edge of the ultrasonic device 1004 is Uneven. The distribution of the intensity of the acoustic energy along the D direction perpendicular to the surface of the ultrasonic device 1004 is also non-uniform. The intensity of the acoustic energy near the region of the ultrasonic device 1004 is higher, and the intensity of the acoustic energy at a region remote from the ultrasonic device 1004 is lower.

2A and 2B show schematic views of an embodiment of a uniform metallization apparatus on a substrate. The apparatus includes an immersion cavity 2021, two electrodes 2002a, 2002b, a conductive substrate holding device 2003, an ultrasonic or megasonic device 2004, and a vertical vibration drive device 2013. The immersion chamber 2021 holds at least one metal salt electrolyte 2020. The electrodes 2002a, 2002b are connected to separate power sources 2024a, 2024b, respectively. The conductive substrate holding device 2003 holds the two substrates 2001a, 2001b such that the conductive sides of the substrates 2001a, 2001b face the electrodes 2002a, 2002b and are electrically conducted via the conductive substrate holding device 2003. The vertical vibration drive device 2013 is again named as the first drive device that drives the conductive substrate holding device 2003 and the electrodes 2002a, 2002b through ultrasonic or megasonic regions and non-ultrasonic or megasonic regions. The device is capable of simultaneously processing two substrates 2001a, 2001b or processing only one of the substrates. The metal salt electrolyte 2020 flows from the bottom of the immersion chamber 2021 to the top. The immersion chamber 2021 is provided with at least one inlet and one outlet for the metal salt electrolyte 2020 cycle. An ultrasonic or megasonic device 2004 is mounted on the sidewall of the immersion cavity 2021, and the surface of the ultrasonic or megasonic device 2004 is immersed in the metal salt electrolyte 2020. An ultrasonic or megasonic generator is coupled to the ultrasonic or megasonic device 2004 for generating acoustic waves having a frequency of 20 kHz to 10 MHz and an acoustic energy intensity of 0.01 to 3 W/cm ² . The ultrasonic or megasonic device 2004 is made of at least one piece of piezoelectric crystal. A sound field is formed in front of the ultrasonic or megasonic device 2004. In Fig. 2B, the region B has an ultrasonic or megasonic region, and the region A and the region C are non-ultrasonic or megasonic regions. The acoustic wave absorbing layer 2040 is disposed opposite the ultrasonic or megasonic device 2004 to prevent the formation of standing waves. The independent power supplies 2024a, 2024b are respectively connected to the electrodes 2002a, 2002b, and can operate in a voltage control mode or a current control mode according to a programmed waveform, and can switch between the two modes according to time requirements. The loading current can be either DC mode or dual pulse mode with a pulse period of 5ms to 2s. Each of the electrodes 2002a, 2002b can be composed of one or more electrodes, and each electrode is connected to a separate power source. A permeable membrane 2011a, 2011b having one or more layers is disposed between the electrodes 2002a, 2002b and the substrates 2001a, 2001b. The electrically conductive substrate holding device 2003 is coupled to a vertical movement drive device 2012 that drives the substrates 2001a, 2001b into the immersed cavity 2021 or out of the immersion cavity 2021. The vertical movement driving device 2012 and the electrodes 2002a, 2002b are both connected to the vertical vibration driving device 2013, and the vertical vibration driving device 2013 has a vibration amplitude of 1-300 mm and a vibration frequency of 0.001-0.5 Hz. The vertical vibration driving device 2013 drives the electrodes 2002a, 2002b and the substrates 2001a, 2001b to periodically vibrate up and down along the Z axis, and the Z axis is perpendicular to the sound wave propagation direction to ensure that each point on the substrates 2001a, 2001b passes through the entire sound field region, Is the area B. The vertical vibration driving device 2013 drives the electrodes 2002a, 2002b and the substrates 2001a, 2001b to vibrate from the sound field region B to the non-sound field region A, then returns to the sound field region B, vibrates from the sound field region B to the non-sound field region C, and then Return to sound field area B. Thus, each point on the substrates 2001a, 2001b has the same acoustic energy obtained during the process.

Figure 3 discloses a schematic diagram of yet another embodiment of a uniform metallization apparatus on a substrate. The apparatus includes an immersion chamber 3021, at least one electrode, a conductive substrate holding device 3003, an ultrasonic or megasonic device 3004, a vertical vibration driving device, an acoustic wave absorbing layer 3040, and a rotational driving device 3017. The immersion chamber 3021 holds at least one metal salt electrolyte 3020. The electrodes are connected to a separate power source. The conductive substrate holding device 3003 holds at least one substrate 3001 such that the conductive side of the substrate 3001 faces the electrode and conducts through the conductive substrate holding device 3003. The ultrasonic or megasonic device 3004 forms a sound field in region B. The vertical vibration drive device is also referred to as a first drive device that drives the conductive substrate holding device 3003 and the electrodes through ultrasonic or megasonic regions and non-ultrasonic or megasonic regions. The acoustic wave absorbing layer 3040 is disposed opposite the ultrasonic or megasonic device 3004 to prevent the formation of standing waves. The rotary driving device 3017 is also referred to as a second driving device connected to the conductive substrate holding device 3003. When the vertical vibration driving device drives the conductive substrate holding device 3003 to vibrate to the non-ultrasonic or megasonic region A and the region C, the rotary driving The device 3017 drives the conductive substrate holding device 3003 to rotate 180° around the axis of the conductive substrate holding device 3003. The purpose is to further improve the uniformity of the surface acoustic energy intensity distribution of the substrate 3001 when the substrate 3001 passes through the ultrasonic or megasonic region B.

Figure 4 discloses a schematic diagram of yet another embodiment of a uniform metallization apparatus on a substrate. The apparatus includes an immersion cavity 4021, at least one electrode, an electrically conductive substrate holding device 4003, an ultrasonic or megasonic device 4004, a vertical vibration drive, and a ramp 4040. The immersion chamber 4021 is filled with at least A metal salt electrolyte 4020. The electrodes are connected to a separate power source. The conductive substrate holding device 4003 holds at least one substrate 4001 such that the conductive side of the substrate 4001 faces the electrode and is electrically conducted via the conductive substrate holding device 4003. The ultrasonic or megasonic device 4004 forms a sound field in region B. The vertical vibration drive device is also referred to as a first drive device that drives the conductive substrate holding device 4003 and the electrodes through ultrasonic or megasonic regions and non-ultrasonic or megasonic regions. The slope 4040 has an angle α (0<α<45) with the sidewall of the immersion cavity 4021, and the slope 4040 is disposed opposite to the ultrasonic or megasonic device 4004, and the slope 4040 reflects the sound wave out of the immersion cavity 4021. To prevent the formation of standing waves.

FIG. 5A illustrates a standing wave passing through the surface of the substrate 5001 when the substrate 5001 is processed in the plating bath. When the sound wave propagates between the ultrasonic or megasonic device 5004 and the reflecting plate 5005, and the distance between the ultrasonic or megasonic device 5004 and the reflecting plate 5005 is equal to , N = 1, 2, 3..., λ is the wavelength of the ultrasonic or megasonic wave, N is an integer, and the forward wave interferes with the reflected wave to form a standing wave. The standing wave having the highest acoustic energy intensity is formed between the ultrasonic or megasonic device 5004 and the reflection plate 5005. When the distance between the ultrasonic or megasonic device 5004 and the reflecting plate 5005 is close to an integral multiple of a half wavelength, a standing wave can be formed between the ultrasonic or megasonic device 5004 and the reflecting plate 5005, but the acoustic energy intensity of the standing wave is not the former. Strong. The standing wave maintains energy uniformity along the direction of propagation of the wave. The energy loss of the standing wave propagating in the electrolyte is minimized. In this case, the uniformity of the distribution of the sound energy intensity from the region closer to the sound source to the region farther from the sound source is improved, and the efficiency of the sound wave generator is also improved.

However, the distribution of the intensity of the acoustic energy within one wavelength of the standing wave is not uniform due to the energy transfer between the nodes of the standing wave and the non-node. 5B illustrates the movement of the substrate 5001 at a distance of a quarter wavelength, moving from the node of the standing wave to the non-node of the standing wave, and the surface of the substrate 5001 obtains a uniform acoustic energy intensity during the accumulated time. Further, in order to maintain the same total acoustic energy intensity at each point on the substrate 5001, the moving distance of the substrate 5001 is equal to , N=1, 2, 3...

Where λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer. Each point on the substrate 5001 achieves the same total acoustic energy intensity during the accumulated plating time, thereby enabling a high plating rate and high plating uniformity.

Figure 5C discloses a schematic representation of the acoustic energy intensity at any point in the acoustic region between the ultrasonic or megasonic device and the reflector. The result is obtained by measurement using an acoustic sensor, and the measurement is performed in an electroplating bath in which an ultrasonic or megasonic device and a reflecting plate are disposed. This result proves that the acoustic energy intensity changes periodically as the distance between the ultrasonic wave or the megasonic device and the reflecting plate in the plating bath changes. The distance between the node and the node is half wavelength of the ultrasonic wave or megasonic wave, and the distance between the node and the non-node is a quarter wavelength of the ultrasonic wave or the megasonic wave.

6A and 6B show schematic views of an embodiment of a uniform metallization apparatus on a substrate. The device includes an immersion cavity 6021, two electrodes 6002a, 6002b, a conductive substrate holding device 6003, an ultrasonic or megasonic device 6004, a reflective plate 6005, and a vertical vibration driving device 6013. The immersion chamber 6021 holds at least one metal salt electrolyte 6020. The electrodes 6002a, 6002b are connected to separate power sources 6024a, 6024b, respectively. A permeable membrane 6011a, 6011b having one or more layers is disposed between the electrodes 6002a, 6002b and the substrates 6001a, 6001b. The conductive substrate holding device 6003 holds the two substrates 6001a, 6001b such that the conductive side of the substrates 6001a, 6001b faces the electrodes 6002a, 6002b and is electrically conducted via the conductive substrate holding device 6003. The reflecting plate 6005 is arranged in parallel with the ultrasonic or megasonic device 6004. The vertical vibration driving device 6013 is also referred to as a first driving device that drives the conductive substrate holding device 6003 and the electrodes 6002a, 6002b through an ultrasonic or megasonic region and a non-ultrasonic or megasonic region. The device is capable of simultaneously processing two substrates 6001a, 6001b or processing only one of the substrates. Metal salt electrolyte 6020 flows from the bottom of immersion chamber 6021 to the top. The immersion chamber 6021 is provided with at least one inlet and one outlet for circulation of the metal salt electrolyte 6020. The electrically conductive substrate holding device 6003 is coupled to a vertical moving drive 6012 that drives the substrates 6001a, 6001b into the immersion cavity 6021 or out of the immersion cavity 6021. The vertical movement driving device 6012 and the electrodes 6002a, 6002b are both connected to the vertical vibration driving device 6013, and the vertical vibration driving device 6013 has a vibration amplitude of 1-300 mm and a vibration frequency of 0.001-0.5 Hz. The vertical vibration driving device 6013 periodically drives the electrodes 6002a, 6002b and the substrates 6001a, 6001b to vibrate up and down along the Z axis during the process, and the Z axis is perpendicular to the bottom plane of the immersion cavity 6021. The vertical vibration driving device 6013 drives the electrodes 6002a, 6002b and the substrates 6001a, 6001b to periodically vibrate up and down along the Z axis to ensure that each point on the substrate 6001a, 6001b passes through the entire sound field region, that is, the region B. The vertical vibration driving device 6013 drives the electrodes 6002a, 6002b and the substrates 6001a, 6001b to vibrate from the sound field region B to the non-sound field region A, then returns to the sound field region B, vibrates from the sound field region B to the non-sound field region C, and then Return to sound field area B. Thus, each point on the substrate 6001a, 6001b has the same acoustic energy obtained during the process. An ultrasonic or megasonic device 6004 and a reflecting plate 6005 parallel to the ultrasonic or megasonic device 6004 are mounted on the side wall of the immersion cavity 6021, and the ultrasonic or megasonic device 6004 and the reflecting plate 6005 are opposed to the conductive substrate holding device 6003. The vibration direction has an inclination angle θ (0 < θ < 45). The surface of the ultrasonic or megasonic device 6004 and the reflection plate 6005 is immersed in the metal salt electrolyte 6020. The standing wave is formed between the surfaces of the ultrasonic or megasonic device 6004 and the reflecting plate 6005. The propagation direction of the standing wave is parallel to the surfaces of the substrates 6001a, 6001b. The standing wave has an angle θ with the normal to the vibration direction of the conductive substrate holding device 6003. As shown in FIG. 6B, X' is the standing wave propagation direction, and the X axis is perpendicular to the vibration direction of the conductive substrate holding device 6003. When the offset ΔX′, that is, the distance that the substrates 6001a and 6001b move in the standing wave propagation direction is an integral multiple of a quarter wavelength, each point on the substrate 6001a, 6001b passes through during the movement of the substrates 6001a and 6001b. The nodes of the wave and the non-nodes, each point on the substrate 6001a, 6001b obtains the same total acoustic energy intensity for each movement cycle. Therefore, the vertical vibration amplitude ΔZ is equal to , N=1, 2, 3...

Where λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer. The reflection plate 6005 is made of one or more layers. The distance between the layers of the reflector 6005 is set to reduce the loss of acoustic energy. In order to keep the surface of the reflecting plate 6005 parallel to the surface of the ultrasonic or megasonic device 6004, the adjusting member is used to set the position of the reflecting plate 6005.

In another embodiment, the apparatus further includes a rotary driving device, which is in turn named as a second driving device connected to the conductive substrate holding device, and the vertical vibration driving device drives the conductive substrate holding device to move to the non-ultrasonic wave Or in the case of the megasonic wave region A and the region C, the rotary driving device drives the conductive substrate holding device to be turned 180° around the axis of the conductive substrate holding device.

Figure 7 discloses a schematic diagram of yet another embodiment of a uniform metallization apparatus on a substrate. The device includes an immersion cavity 7021, at least one electrode, a conductive substrate holding device 7003, an ultrasonic or megasonic device 7004, a reflective plate 7005, and a vertical vibration driving device 7013. The immersion chamber 7021 holds at least one metal salt electrolyte 7020. The electrodes are connected to a separate power source. The conductive substrate holding device 7003 holds at least one substrate 7001 such that the conductive side of the substrate 7001 faces the electrode and is electrically conducted via the conductive substrate holding device. The reflection plate 7005 is arranged in parallel with the ultrasonic or megasonic device 7004. The vertical vibration driving device 7013 is also referred to as a first driving device that drives the conductive substrate holding device 7003 and the electrodes through ultrasonic or megasonic regions and non-ultrasonic or megasonic regions. An ultrasonic or megasonic device 7004 and a reflector 7005 parallel to the ultrasonic or megasonic device 7004 are mounted on the sidewall of the immersion cavity 7021, and the ultrasonic or megasonic device 7004 and the reflector 7005 are perpendicular to the bottom of the immersion cavity 7021. flat. The surface of the ultrasonic or megasonic device 7004 and the reflection plate 7005 is immersed in the metal salt electrolyte 7020. The standing wave is formed between the surfaces of the ultrasonic or megasonic device 7004 and the reflecting plate 7005. The conductive substrate holding device 7003 is connected to the vertical vibration driving device 7013, and the vertical vibration driving device 7013 has a vibration amplitude of 1-300 mm and a vibration frequency of 0.001-0.5 Hz. The vertical vibration driving device 7013 periodically drives the conductive substrate holding device 7003 to vibrate up and down in the Z' direction, and has an angle θ (0< θ <45) between the Z' and the Z axis, and the Z axis is perpendicular to the standing wave. Direction of communication. When the offset ΔX, that is, the distance that the substrate 7001 moves in the standing wave propagation direction is an integral multiple of a quarter wavelength, each point on the substrate 7001 passes through the standing wave node and the non-node during the movement of the substrate 7001. Each point on the substrate 7001 achieves the same total acoustic energy intensity for each movement cycle. Therefore, the vertical vibration amplitude ΔZ' is equal to , N=1, 2, 3...

Where λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer. The vertical vibration driving device 7013 drives the substrate 7001 to periodically vibrate up and down in the Z' direction to ensure that each point on the substrate 7001 passes through the entire sound field region, that is, the region B. The vertical vibration driving device 7013 drives the substrate 7001 to vibrate from the sound field region B to the non-sound field region A, then returns to the sound field region B, vibrates from the sound field region B to the non-sound field region C, and then returns to the sound field region B. Thus, each point on the substrate 7001 has the same acoustic energy obtained during the process.

Figure 8 discloses a schematic diagram of yet another embodiment of a uniform metallization apparatus on a substrate. The apparatus includes an immersion cavity 8021, at least one electrode, a conductive substrate holding device 8003, an ultrasonic or megasonic device 8004, a reflective plate 8005, and a vertical vibration driving device 8013. Immersion cavity 8021 At least one metal salt electrolyte 8020 is contained. The electrodes are connected to a separate power source. The conductive substrate holding device 8003 holds at least one substrate 8001 such that the conductive side of the substrate 8001 faces the electrode and conducts through the conductive substrate holding device 8003. The reflecting plate 8005 is arranged in parallel with the ultrasonic or megasonic device 8004. The vertical vibration drive device 8013 is also referred to as a first drive device that drives the conductive substrate holding device 8003 and the electrodes through ultrasonic or megasonic regions and non-ultrasonic or megasonic regions. An ultrasonic or megasonic device 8004 and a reflecting plate 8005 parallel to the ultrasonic or megasonic device 8004 are mounted on the side wall of the immersion cavity 8021, and the ultrasonic or megasonic device 8004 and the reflecting plate 8005 are perpendicular to the bottom of the immersed cavity 8021. flat. The surface of the ultrasonic or megasonic device 8004 and the reflecting plate 8005 is immersed in the metal salt electrolyte 8020. The standing wave is formed between the surfaces of the ultrasonic or megasonic device 8004 and the reflecting plate 8005. The conductive substrate holding device 8003 is connected to the vertical vibration driving device 8013. The vertical vibration driving device 8013 drives the conductive substrate holding device 8003 and the electrodes to periodically vibrate up and down along the Z axis during the process, and the Z axis is perpendicular to the standing wave propagation direction. . The vertical vibration driving device 8013 has a vibration amplitude of 1-300 mm and a vibration frequency of 0.001-0.5 Hz. Another vibration driving device 8015 is also named as a third driving device connected to the vertical vibration driving device 8013. When the vertical vibration driving device 8013 drives the conductive substrate holding device 8003 and the electrodes periodically vibrate up and down along the Z axis during the process. At this time, the vibration driving device 8015 drives the conductive substrate holding device 8003 to move along the X axis, and the X axis is the standing wave propagation direction. Under the driving of the vertical vibration driving device 8013 and the vibration driving device 8015, the conductive substrate holding device 8003 periodically rises and falls in a direction perpendicular to the standing wave propagation direction. The vibration is simultaneously reciprocated in the direction of the standing wave propagation, and the vibration frequency in the direction of the standing wave propagation is greater than the vibration frequency in the direction perpendicular to the direction in which the standing wave propagates. When the vibration driving device 8015 drives the amplitude of the vibration of the substrate 8001 along the X-axis to be an integral multiple of a quarter wavelength, each point on the substrate 8001 passes through the standing wave node and the non-node during the vibration of the substrate 8001, and the substrate 8001 Each point achieves the same total acoustic energy intensity at each vibration cycle.

Figure 9 discloses a schematic view of yet another embodiment of a uniform metallization device on a substrate. The device includes an immersion cavity 9021, at least one electrode 9002, a conductive substrate holding device 9003, an ultrasonic or megasonic device 9004, a reflective plate 9005, and a vertical vibration driving device 9013. The immersion chamber 9021 holds at least one metal salt electrolyte 9020. Electrode 9002 is coupled to a separate power source 9024. The conductive substrate holding device 9003 holds at least one substrate 9001 such that the conductive side of the substrate 9001 faces the electrode 9002 and is electrically conducted via the conductive substrate holding device 9003. The reflecting plate 9005 is arranged in parallel with the ultrasonic or megasonic device 9004. The vertical vibration driving device 9013 is also referred to as a first driving device that drives the conductive substrate holding device 9003 through ultrasonic or megasonic regions having different acoustic energy intensities. Metal salt electrolyte 9020 flows from the bottom of immersion chamber 9021 to the top. The immersion chamber 9021 is provided with at least one inlet and one outlet for the metal salt electrolyte 9020 to circulate. An ultrasonic or megasonic device 9004 and a reflecting plate 9005 parallel to the ultrasonic or megasonic device 9004 are mounted on the side wall of the immersion cavity 9021, and the surfaces of the ultrasonic or megasonic device 9004 and the reflecting plate 9005 are immersed in the metal salt electrolyte 9020. . Standing wave formed in ultrasonic or megasonic wave Place 9004 between the surfaces parallel to the reflector 9005. The rotating member 9036 is coupled to the conductive substrate holding device 9003, and the rotational speed of the rotating member 9036 is from 10 rpm to 300 rpm. The rotary actuator 9033 is again named as the fourth drive device located on the outer wall of the immersion cavity 9021, and the rotary actuator 9033 provides a driving force to drive the rotary member 9036 to rotate through the magnetic coupling mechanism. The connecting member 9030 connects the vertical vibration driving device 9013 and the rotating member 9036 together. The vertical vibration driving device 9013 drives the conductive substrate holding device 9003 to periodically vibrate up and down along the Z axis. At the same time, the rotating member 9036 drives the conductive substrate holding device 9003 to rotate about an axis perpendicular to the substrate surface. The vertical vibration driving device 9013 drives the conductive substrate holding device 9003 to vibrate along the Z-axis with an amplitude of 1-300 mm. In this case, each point on the substrate 9001 has the same acoustic energy intensity obtained during the process. During the rotation of the substrate 9001, the connecting member 9030 transmits electrical conduction with the substrate 9001 through the contact member 9034. Gas line 9038 provides gas to connecting element 9030 to maintain a positive pressure within connecting element 9030, thereby preventing electrolyte 9020 from entering connecting element 9030.

Fig. 10A discloses a schematic diagram in which the intensity of the acoustic energy in the acoustic region between the ultrasonic or megasonic device and the reflecting plate changes as the distance between the ultrasonic or megasonic device and the reflecting plate changes. The acoustic energy intensity profile between the ultrasonic or megasonic device 10004 and the reflector 10005 is obtained by an acoustic test station test in which the dark regions represent low acoustic energy intensity and the bright regions represent high acoustic energy intensity. The alternating lines of light and dark along the Z-axis in the distribution of the intensity of the sound energy reveal the formation of standing waves. The nodes of the standing wave correspond to the darkest line, and the non-nodes of the standing wave correspond to the brightest line. The distance between the ultrasonic or megasonic device 10004 and the reflector 10005 is indicated as d. When the distance between the ultrasonic or megasonic device 10004 and the reflecting plate 10005 is changed from d1 to d2 ( d 1≠ d 2), the sound energy intensity map changes from the brightest to the darkest, and the difference between d2 and d1 is the ultrasonic wave. Or an integer multiple of the quarter-wavelength of a megasonic wave. It can be seen that the formation of standing waves is different when the distance between the ultrasonic or megasonic device 10004 and the reflecting plate 10005 is changed. Fig. 10B is a view showing the acoustic energy intensity at any point in the acoustic region between the ultrasonic or megasonic device and the reflecting plate when the distance between the ultrasonic or megasonic device and the reflecting plate is changed. The distance between the ultrasonic or megasonic device and the reflector is reduced from dn to dm. Fig. 10B discloses that the acoustic energy intensity changes periodically when the distance between the ultrasonic or megasonic device and the reflecting plate is changed.

Schematic diagram of the movement. The acoustic energy intensity profile between the ultrasonic or megasonic device 11004 and the reflector 11005 is obtained by an acoustic test station test in which the dark regions represent low acoustic energy intensity and the bright regions represent high acoustic energy intensity. The alternating lines of light and dark along the Z-axis in the distribution of the intensity of the sound energy reveal the formation of standing waves. The nodes of the standing wave correspond to the darkest line, and the non-nodes of the standing wave correspond to the brightest line. A dark strip in the X' direction of the acoustic energy intensity profile indicates that the distribution of acoustic energy intensity along a direction perpendicular to the surface of the ultrasonic device is not uniform. The amplitude of the substrate vibrating along the Z axis is , N=1, 2, 3...

Where λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer. The angle between Z' and the Z axis is θ (0 degrees < θ < 45 degrees). The component motion along the X' direction, the angle between X' and the X axis is θ (0 degrees < θ < 45 degrees), causing each point on the substrate 11001 to pass through the standing and non-standing nodes in each vibration period. node. At the same time, the reflecting plate vibrates in the X' direction, and the vibration amplitude is an integral multiple of a half wavelength, thereby ensuring that the total acoustic energy intensity between the ultrasonic or megasonic device and the reflecting plate is the same in each vibration period. The vibration speed of the reflector is faster than the vibration speed of the substrate. The above method solves the problem of parallelism adjustment between the ultrasonic or megasonic device and the reflector, so that the optimal condition for standing wave formation is satisfied between the ultrasonic or megasonic device and the reflector. In addition, even if the immersion cavity is not very stable, the sound field in the immersed cavity can remain stable during each vibration cycle.

12A through 12C illustrate schematic views of yet another embodiment of a uniform metallization apparatus on a substrate. The apparatus includes an immersion chamber 12021, two electrodes 12002a, 12002b, a conductive substrate holding device 12003, an ultrasonic or megasonic device 12004, a reflector 12005, a vertical vibration driving device 12013, and a vibration driver 12006. The immersion chamber 12021 holds at least one metal salt electrolyte 12020. The two electrodes 12002a, 12002b are connected to separate power supplies 12024a, 12024b, respectively. The conductive substrate holding device 12003 holds the two substrates 12001a, 12001b such that the conductive sides of the substrates 12001a, 12001b face the electrodes 12002a, 12002b and are electrically conducted via the conductive substrate holding device 12003. The reflecting plate 12005 is arranged in parallel with the ultrasonic or megasonic device 12004. The vertical vibration drive device 12013 is again named as the first drive device that drives the conductive substrate holding device 12003 through ultrasonic or megasonic regions and non-ultrasonic or megasonic regions. The vibration driver 12006 is connected to the reflection plate 12005. The vibration driver 12006 is mounted on the back surface of the reflector 12005 through the bellows element 12007, and the vibration driver 12006 drives the reflector 12005 to vibrate back and forth in the X' direction, that is, the direction of standing wave propagation, to change the reflector 12005 and the ultrasonic or megasonic device 12004. the distance between. The vibration frequency of the vibration driver 12006 is 1-10 Hz, and the amplitude is , λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer between 1 and 10. While the vibration driver 12006 drives the reflection plate 12005 to vibrate, the vertical vibration driving device 12013 drives the substrates 12001a and 12001b to periodically vibrate up and down along the Z axis, and each point on the substrate 12001a, 12001b passes through the entire sound field region, that is, the region B, The vertical vibration driving device 12013 drives the substrates 12001a, 12001b to vibrate from the sound field region B to the non-sound field region A, then returns to the sound field region B, vibrates from the sound field region B to the non-sound field region C, and then returns to the sound field region B. . The vibration speed of the vibration driver 12006 is faster than the vibration speed of the vertical vibration driving device 12013.

Figure 13 discloses a schematic diagram of yet another embodiment of a uniform metallization apparatus on a substrate. In this embodiment, the vibration driver 13006 is mounted on the back surface of the ultrasonic or megasonic device 13004 through the bellows member 13007, and the vibration driver 13006 drives the ultrasonic or megasonic device 13004 to vibrate back and forth along the direction of the standing wave to change the reflector 13005 and the ultrasonic wave. Or the distance between the megasonic devices 13004. The vibration frequency of the vibration driver 13006 is 1-10 Hz, and the amplitude is , λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer between 1 and 10.

Figure 14 discloses a schematic view of an embodiment of a reflector. The reflecting plate 14005 is composed of one or more solid plates 14050, 14052. An air gap 14051 is formed between the two solid plates 14050, 14052 to increase the reflectivity of the reflector 14005 and reduce acoustic energy loss. A seal ring 14053 is disposed between the two solid plates 14050, 14052 to prevent electrolyte from penetrating into the air gap 14051. In one embodiment, the solid plate 14050 is made of a thin quartz material, and the thickness of the solid plate 14050 is , λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer between 1 and 100.

Figure 15 discloses a schematic view of yet another embodiment of a uniform metallization apparatus on a substrate. The device includes an immersion cavity 15021, a substrate holding device 15003, an ultrasonic or megasonic device 15004, and a vertical vibration driving device 15013. The immersion chamber 15021 holds at least one metal salt electrolyte 15020. The substrate holding device 15003 holds the two substrates 15001a and 15001b, and immerses one side of the substrates 15001a and 15001b to be immersed in the electrolyte 15020. The vertical vibration driving device 15013 is also referred to as a first driving device that drives the substrate holding device 15003 through an ultrasonic or megasonic region and a non-ultrasonic or megasonic region. The substrate holding device 15003 can hold a plurality of substrates while performing processing in the immersion cavity 15021. The vertical vibration driving device 15013 periodically drives the substrate holding device 1503 to vibrate up and down along the Z axis during the process, and the Z axis is perpendicular to the bottom of the immersion cavity 15021. To ensure that each point on the substrate passes through the entire sound field, each point on the substrate acquires the same level of acoustic energy over the cumulative time. When the substrates 15001a and 15001b are moved to the non-sound field region, the substrates 15001a and 15001b are flipped by 180 degrees to further improve the uniformity of the surface acoustic energy intensity distribution of the substrates 15001a and 15001b. In another embodiment, the reflector is disposed in parallel with the ultrasonic or megasonic device 15004, and the distance between the reflector and the ultrasonic or megasonic device 15004 is controllable to create a standing wave within the immersion cavity 15021.

The present invention also provides a method of uniform metallization on a substrate, the method comprising the steps of:

Step 1: Introducing a metal salt electrolyte into the immersion chamber, wherein the metal salt electrolyte includes at least one of the following metal cations: Cu, Au, Ag, Pt, Ni, Sn, Co, Pd, Zn.

Step 2: Transfer at least one substrate to the substrate holding device such that the conductive side of the substrate faces the electrode, and the substrate holding device has electrical conductivity and is in electrical communication with the conductive layer of the substrate.

Step 3: Load the substrate with a small bias of up to 10V.

Step 4: The substrate is placed in an electrolyte, and the conductive side of the substrate is in complete contact with the electrolyte.

Step 5: Load current to each electrode, and the power supply connected to the electrode can be switched from voltage mode to current mode for a predetermined time.

Step 6: Maintain the electrode current constant, the current range is from 0.1A to 100A, and open the ultrasonic or megasonic device. The ultrasonic or megasonic device has an acoustic energy intensity of 0.01-3 W/cm ² and a frequency of 20 KHz-10 MHz. In another embodiment, the loaded current is an adjustable dual pulse mode with a pulse period of 5 ms to 2 s.

Step 7: Vibrate the substrate so that the substrate passes through the entire sound field region, vibrates from the sound field region B to the non-sound field region A, then returns to the sound field region B, vibrates from the sound field region B to the non-sound field region C, and then returns to the sound. In the field region B, the substrate vibration amplitude is 1 mm to 300 mm, and the vibration frequency is 0.001 to 0.5 Hz.

Step 8: Turn off the ultrasonic or megasonic device and stop vibrating the substrate.

Step 9: Switch the power supply to a small bias mode and load it into the substrate from 0.1V to 0.5V.

Step 10: Remove the substrate from the electrolyte.

Step 11: Stop the power supply and clean the residual electrolyte on the surface of the substrate.

The above method is suitable for depositing a metal layer in a deep hole on a substrate, the deep hole having a width of 0.5 to 50 μm and the deep hole having a depth of 5 to 500 μm.

In another embodiment, when the substrate vibrates to the non-sound field regions A and C, the substrate is flipped 180 degrees.

The present invention also provides another method of uniform metallization on a substrate, the method comprising the steps of:

Step 1: Introducing a metal salt electrolyte into the immersion chamber, wherein the metal salt electrolyte includes at least one of the following metal cations: Cu, Au, Ag, Pt, Ni, Sn, Co, Pd, Zn.

Step 2: Transfer at least one substrate to the substrate holding device such that the conductive side of the substrate faces the electrode, and the substrate holding device has electrical conductivity and is in electrical communication with the conductive layer of the substrate.

Step 3: Load the substrate with a small bias of up to 10V.

Step 4: Place the substrate in the electrolyte, the conductive side of the substrate and the electricity The solution is completely in contact.

Step 5: Load current to each electrode, and the power supply connected to the electrode can be switched from voltage mode to current mode for a predetermined time.

Step 6: Maintain the electrode current constant, the current range is from 0.1A to 100A, and open the ultrasonic or megasonic device. The ultrasonic or megasonic device has an acoustic energy intensity of 0.01-3 W/cm ² and a frequency of 20 KHz-10 MHz. In another embodiment, the loaded current is an adjustable dual pulse mode with a pulse period of 5 ms to 2 s.

Step 7: Vibrate the substrate so that the substrate passes through the entire sound field region, vibrates from the sound field region B to the non-sound field region A, then returns to the sound field region B, vibrates from the sound field region B to the non-sound field region C, and then returns to the sound. Field area B, the substrate vibration amplitude is 1mm-300mm, the vibration frequency is 0.001-0.5Hz, and at the same time, the distance between the ultrasonic or megasonic device and the reflector is periodically changed, and the length of the change is , [Lambda] is the wavelength of ultrasonic or megasonic, N being an integer between 1 and 10, changing the frequency of 1-10HZ.

Step 8: Turn off the ultrasonic or megasonic device, stop vibrating the substrate, and stop periodically changing the distance between the ultrasonic or megasonic device and the reflector.

Step 9: Switch the power supply to a small bias mode and load it into the substrate from 0.1V to 0.5V.

Step 10: Remove the substrate from the electrolyte.

Step 11: Stop the power supply and clean the residual electrolyte on the surface of the substrate.

The above method is suitable for depositing metal in deep holes on a substrate The layer has a deep hole having a width of 0.5 to 50 μm and a deep hole having a depth of 5 to 500 μm.

In another embodiment, in step 7, the amplitude of the substrate periodically vibrating up and down is , N = 1, 2, 3..., λ is the wavelength of the ultrasonic or megasonic wave, N is an integer, and θ is the angle between the ultrasonic or megasonic device and the direction of vibration of the substrate. The direction in which the substrate periodically vibrates up and down is perpendicular to the bottom plane of the immersed cavity.

In step 7, the frequency at which the distance between the ultrasonic or megasonic device and the reflector periodically changes is greater than the frequency at which the substrate periodically vibrates up and down. By periodically changing the distance between the ultrasonic or megasonic device and the reflector and periodically vibrating the substrate up and down, each point on the substrate passes through the entire sound field during the process, thereby achieving the same acoustic energy.

In another embodiment, in step 7, while the substrate periodically vibrates up and down, the substrate also vibrates in the direction of propagation of the wave, and the amplitude of the vibration in the direction of propagation of the wave is an integer multiple of a quarter wavelength.

In another embodiment, when the substrate vibrates to the non-sound field regions A and C, the substrate is flipped 180 degrees.

In another embodiment, in step 7, the direction of vibration of the substrate and the ultrasonic or megasonic device and the reflector have an angle θ (0 degrees < θ < 45 degrees), and the amplitude of the substrate vibration is , N = 1, 2, 3..., λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer. The ultrasonic or megasonic device and the reflector are directed to the bottom plane of the immersion cavity.

In another embodiment, in step 7, while the substrate periodically vibrates up and down, the substrate rotates, and the rotation speed of the substrate rotates from 10 rpm to 300 rpm.

The present invention also provides another method of uniform metallization on a substrate, the method comprising the steps of:

Step 1: Introducing a metal salt electrolyte into the immersion chamber, wherein the metal salt electrolyte includes at least one of the following metal cations: Cu, Au, Ag, Pt, Ni, Sn, Co, Pd, Zn.

Step 2: Transfer at least one substrate to the substrate holding device.

Step 3: Turn on the ultrasonic or megasonic device. The ultrasonic or megasonic device has an acoustic energy intensity of 0.01 - 3 W/cm ² and a frequency of 20 kHz to 10 MHz.

Step 4: Vibrate the substrate so that the substrate passes through the entire sound field region, vibrates from the sound field region B to the non-sound field region A, then returns to the sound field region B, vibrates from the sound field region B to the non-sound field region C, and then returns to the sound. In the field region B, the substrate vibration amplitude is 1 mm to 300 mm, and the vibration frequency is 0.001 to 0.5 Hz.

Step 5: Turn off the ultrasonic or megasonic device and stop vibrating the substrate.

Step 6: Remove the substrate from the electrolyte.

The present invention also provides another method of uniform metallization on a substrate, the method comprising the steps of:

Step 1: Introducing a metal salt electrolyte into the immersion chamber, wherein the metal salt electrolyte includes at least one of the following metal cations: Cu, Au, Ag, Pt, Ni, Sn, Co, Pd, Zn.

Step 2: Transfer at least one substrate to the substrate holding device.

Step 3: Turn on the ultrasonic or megasonic device. The ultrasonic or megasonic device has an acoustic energy intensity of 0.01 - 3 W/cm ² and a frequency of 20 kHz to 10 MHz.

Step 4: Vibrate the substrate so that the substrate passes through the entire sound field region, vibrates from the sound field region B to the non-sound field region A, then returns to the sound field region B, vibrates from the sound field region B to the non-sound field region C, and then returns to the sound. Field area B, the substrate vibration amplitude is 1mm-300mm, the vibration frequency is 0.001-0.5Hz, and at the same time, the distance between the ultrasonic or megasonic device and the reflector is periodically changed, and the length of the change is , λ is the wavelength of the ultrasonic or megasonic wave, N is an integer between 1 and 10, and the frequency of change is 1-10HZ.

Step 5: Turn off the ultrasonic or megasonic device, stop vibrating the substrate, and stop periodically changing the distance between the ultrasonic or megasonic device and the reflector.

Step 6: Remove the substrate from the electrolyte.

In view of the above, the present invention has been specifically disclosed by the above-described embodiments and related drawings, and can be implemented by those skilled in the art. The above-mentioned embodiments are only intended to illustrate the invention, and are not intended to limit the invention, and the scope of the invention should be defined by the scope of the invention. Changes in the number of elements described herein or substitution of equivalent elements are still within the scope of the invention.

Claims (49)

A device for uniform metallization on a substrate, comprising: an immersion cavity for holding a metal salt electrolyte; at least one electrode connected to at least one power source; and a substrate holding device for holding at least one substrate, the substrate The electrically conductive side faces an electrode and is electrically conductive via the substrate holding device; at least one ultrasonic or megasonic device and a reflecting plate for forming a standing wave in the immersed cavity; and a first driving device for driving the substrate holding device to periodically vibrate The substrate holding device is passed through the entire standing wave sound field region so that the substrate surface obtains a uniform sound energy intensity distribution during the accumulation time. The device for uniform metallization on a substrate according to claim 1, wherein the first driving device drives the substrate holding device to periodically vibrate up and down along an axis perpendicular to a direction in which the standing wave propagates. The apparatus for uniformly metallizing on a substrate according to claim 1, wherein the first driving device drives the substrate holding device to periodically vibrate up and down in a direction between the direction and a normal of the standing wave propagation direction. Has an angle. The device for uniform metallization on a substrate according to claim 1, further comprising a rotation driving device, wherein when the substrate holding device passes through the non-sound field region, the rotation driving device drives the substrate holding device around the axis of the substrate holding device Flip 180 degrees. The apparatus for uniformly metallizing on a substrate according to claim 1, further comprising a third driving device, wherein the third driving device drives the substrate holding device to vibrate in a standing wave propagation direction, and the third driving device drives the substrate holding device The frequency of vibration in the direction of the standing wave propagation is greater than the vibration frequency of the first driving device driving the substrate holding device through the entire standing wave sound field region. The apparatus for uniformly metallizing on a substrate according to claim 1, wherein the substrate holding device holds two substrates. The apparatus for uniform metallization on a substrate according to claim 6, further comprising another electrode, each electrode facing an electrically conductive side of the substrate. A device for uniform metallization on a substrate according to claim 1, wherein each electrode comprises one or more electrodes, each electrode being connected to an independent power source. A device for uniform metallization on a substrate according to claim 1, wherein the first driving device has a vibration frequency of 0.001 to 0.5 Hz. The apparatus for uniform metallization on a substrate according to claim 1, further comprising at least one permeable membrane disposed between the substrate and the electrode. A device for uniform metallization on a substrate according to claim 1, wherein the ultrasonic or megasonic device comprises at least one piezoelectric crystal. The apparatus for uniform metallization on a substrate according to claim 1, wherein the ultrasonic or megasonic device has a frequency of 20 kHz to 10 MHz and an acoustic energy intensity of 0.01 to 3 W/cm 2 . A device for uniform metallization on a substrate according to claim 1, characterized in that the reflecting plate faces the ultrasonic or megasonic device and is arranged in parallel with the ultrasonic or megasonic device. The apparatus for uniformly metallizing on a substrate according to claim 1, wherein the ultrasonic or megasonic device and the reflector are mounted on a sidewall of the immersion cavity, the surface of the ultrasonic or megasonic device and the reflector Immerse in the metal salt electrolyte. The apparatus for uniform metallization on a substrate according to claim 1, wherein the direction of propagation of the standing wave is parallel to the surface of the substrate. The apparatus for uniformly metallizing on a substrate according to claim 1, wherein the ultrasonic or megasonic device and the reflecting plate are parallel to a vibration direction of the substrate holding device. a device for uniform metallization on a substrate according to claim 1, It is characterized in that the ultrasonic or megasonic device and the reflecting plate have an inclination angle with respect to the vibration direction of the substrate holding device. A device for uniform metallization on a substrate according to claim 1, further comprising an adjustment member that adjusts either of the ultrasonic or megasonic device and the reflector to be parallel. A device for uniform metallization on a substrate according to claim 18, wherein the adjustment member comprises a vibration driver that drives the propagation of any one of the ultrasonic or megasonic device and the reflector along the standing wave. Directional vibration, the vibration frequency of the vibration driver is 1-10HZ, and the amplitude is , λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer between 1 and 10. The apparatus for uniform metallization on a substrate according to claim 1, wherein the reflecting plate is composed of one or more solid plates, and the solid plate is made of a thin quartz material, and the thickness of the solid plate is , λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer between 1 and 100. The apparatus for uniformly metallizing on a substrate according to claim 1, wherein the reflecting plate comprises at least two solid plates, and an air gap is formed between two adjacent solid plates to reduce acoustic energy loss. . The apparatus for uniform metallization on a substrate according to claim 1, further comprising a rotary actuator that drives the substrate holding device to rotate along an axis perpendicular to the surface of the substrate. The apparatus for uniformly metallizing on a substrate according to claim 22, further comprising: a rotating element coupled to the substrate holding device, the rotary actuator providing a driving force to drive the rotating element to rotate through a magnetic coupling mechanism, thereby Drive the substrate holding device to rotate. A device for uniform metallization on a substrate according to claim 22, wherein the substrate holding device has a rotational speed of 10 to 100 rpm. A device for uniform metallization on a substrate, comprising: an immersion cavity for holding a metal salt electrolyte; at least one electrode connected to at least one power source; and a substrate holding device for holding at least one substrate, the substrate The electrically conductive side faces an electrode and is electrically conductive via the substrate holding device; at least one ultrasonic or megasonic device is mounted on the sidewall of the immersion cavity for forming a sound field in the immersion cavity; and a first driving device, The substrate holding device is driven to periodically vibrate, so that the substrate holding device passes through the entire sound field region, so that the surface of the substrate obtains a uniform distribution of sound energy intensity during the accumulation time. a device for uniform metallization on a substrate according to claim 25, It is characterized in that it further comprises an acoustic wave absorbing layer which is arranged opposite the ultrasonic or megasonic device to prevent the formation of standing waves. The apparatus for uniform metallization on a substrate according to claim 25, further comprising a slope surface having an angle α (0 degree < θ < 45 degrees) between the slope surface and the side wall of the immersed cavity, the slope The face is arranged opposite the ultrasonic or megasonic device to reflect the sound waves out of the immersion cavity to prevent the formation of standing waves. The apparatus for uniformly metallizing on a substrate according to claim 25, further comprising: a rotary driving device that drives the substrate holding device around the axis of the substrate holding device when the substrate holding device passes through the non-sound field region Flip 180 degrees. A device for uniform metallization on a substrate, comprising: an immersion cavity for holding a metal salt electrolyte; a substrate holding device for holding at least one substrate; at least one ultrasonic or megasonic device mounted in the immersion cavity a sidewall of the body for forming an acoustic field in the immersed cavity; and a first driving device for driving the substrate holding device to periodically vibrate, so that the substrate holding device passes through the entire sound field region, so that the substrate surface is obtained during the accumulation time Uniform distribution of sound energy intensity. A device for uniform metallization on a substrate, characterized in that The invention comprises: an immersed cavity for holding a metal salt electrolyte; a substrate holding device for holding at least one substrate; at least one ultrasonic or megasonic device and a reflector for forming a standing wave in the immersed cavity; and a first driving device The substrate holding device is periodically vibrated, so that the substrate holding device passes through the entire standing wave sound field region, so that the substrate surface obtains a uniform sound energy intensity distribution during the accumulation time. A method for uniformly metallizing on a substrate, comprising: introducing a metal salt electrolyte into the immersed cavity; transferring at least one substrate to the substrate holding device, the conductive side of the substrate facing the electrode, the substrate holding device having Conductive, in electrical communication with the substrate conductive layer; loading the substrate with a first bias; loading a current to the electrode; opening the ultrasonic or megasonic device; driving the substrate holding device to periodically vibrate, causing the substrate holding device to pass through the entire sound field region Periodically changing the distance between the ultrasonic or megasonic device and the reflector; turning off the ultrasonic or megasonic device, stopping the substrate and changing the distance between the ultrasonic or megasonic device and the reflector; loading the substrate with a second bias And removing the substrate from the metal salt electrolyte. A method of uniformly metallizing on a substrate according to claim 31, wherein the first bias voltage is 0.1V-10V; the current loaded to the electrode is 0.1A-100A; and the frequency of the ultrasonic or megasonic device is 20KHz-10MHz, the acoustic energy intensity is 0.01-3W/cm2; the amplitude of the periodic vibration of the substrate holding device is 1mm-300mm, the vibration frequency is 0.001-0.5Hz; the distance between the ultrasonic or megasonic device and the reflector is periodically changed. Length is λ is the wavelength of the ultrasonic or megasonic wave, N is an integer between 1 and 10, the frequency of change is 1-10HZ, and the second bias is 0.1V-5V. The method of uniformly metallizing on a substrate according to claim 31, wherein the metal salt electrolyte comprises at least one of the following metal cations: Cu, Au, Ag, Pt, Ni, Sn, Co, Pd, Zn. A method of uniformly metallizing on a substrate according to claim 31, wherein a metal layer is deposited in the deep hole of the substrate, the deep hole has a width of 0.5 to 50 μm, and the deep hole has a depth of 5 to 500 μm. A method of uniformly metallizing on a substrate according to claim 31, characterized in that the current loaded to the electrode is a DC mode or an adjustable double pulse Mode, pulse period is 5ms to 2s. A method of uniformly metallizing on a substrate according to claim 31, wherein the substrate is flipped by 180 degrees when the substrate passes through the non-sound field region. A method of uniform metallization on a substrate according to claim 31, wherein each point on the substrate passes through the entire sound field region, and each point on the substrate acquires the same acoustic energy intensity during the process. The method of uniformly metallizing on a substrate according to claim 31, characterized in that the two substrates are simultaneously processed in an immersed cavity. A method of uniformly metallizing on a substrate according to claim 31, characterized in that the amplitude of the substrate vibration is , N=1, 2, 3..., λ is the wavelength of the ultrasonic or megasonic wave, N is an integer, θ is the angle between the ultrasonic or megasonic device and the vibration direction of the substrate, and the direction of the periodic vibration of the substrate is perpendicular to the immersion The bottom plane of the cavity. A method of uniformly metallizing on a substrate according to claim 31, characterized in that the frequency at which the distance between the ultrasonic or megasonic device and the reflecting plate is periodically changed is greater than the frequency at which the substrate periodically vibrates. a method of uniformly metallizing on a substrate according to claim 31, It is characterized in that the substrate also vibrates in the direction of propagation of the wave while the substrate periodically vibrates up and down. The method of uniformly metallizing on a substrate according to claim 41, wherein the amplitude of the substrate vibrating in the wave propagation direction is an integral multiple of a quarter wavelength. A method of uniformly metallizing on a substrate according to claim 31, characterized in that the amplitude of the substrate vibration is , N=1, 2, 3..., λ is the wavelength of the ultrasonic or megasonic wave, N is an integer, θ is the angle between the ultrasonic or megasonic device and the direction of vibration of the reflector and the substrate, and the ultrasonic or megasonic device The reflector is straighter than the bottom plane of the immersion chamber. A method of uniformly metallizing on a substrate according to claim 31, wherein the substrate is rotated while the substrate is periodically vibrated up and down, and the rotation speed of the substrate is 10 rpm to 300 rpm. A method for uniformly metallizing on a substrate, comprising: introducing a metal salt electrolyte into the immersed cavity; transferring at least one substrate to the substrate holding device, the conductive side of the substrate facing the electrode, the substrate holding device having Conductive, in electrical communication with the conductive layer of the substrate; Loading a first bias voltage to the substrate; loading a current to the electrode; opening the ultrasonic or megasonic device; driving the substrate holding device to periodically vibrate, causing the substrate holding device to pass through the entire sound field; turning off the ultrasonic or megasonic device, stopping the vibration a substrate; loading a second bias to the substrate; and removing the substrate from the metal salt electrolyte. A method of uniformly metallizing on a substrate according to claim 45, wherein the first bias voltage is 0.1V-10V; the current loaded to the electrode is 0.1A-100A; and the frequency of the ultrasonic or megasonic device is 20KHz-10MHz, the acoustic energy intensity is 0.01-3W/cm2; the amplitude of the periodic vibration of the substrate holding device is 1mm-300mm, the vibration frequency is 0.001-0.5Hz; the second bias voltage is 0.1V-5V. A method of uniformly metallizing on a substrate according to claim 45, wherein the substrate is flipped by 180 degrees when the substrate passes through the non-sound field region. A method for uniformly metallizing on a substrate, comprising: introducing a metal salt electrolyte into the immersed cavity; Transferring at least one substrate to the substrate holding device; opening the ultrasonic or megasonic device; driving the substrate holding device to periodically vibrate, causing the substrate holding device to pass through the entire sound field; turning off the ultrasonic or megasonic device, stopping the vibration of the substrate; and moving the substrate out of the metal Salt electrolyte. A method for uniformly metallizing a substrate, comprising: introducing a metal salt electrolyte into the immersed cavity; transferring at least one substrate to the substrate holding device; opening the ultrasonic or megasonic device; and driving the substrate holding device to periodically vibrate , the substrate holding device passes through the entire sound field region; periodically changes the distance between the ultrasonic or megasonic device and the reflector; closes the ultrasonic or megasonic device, stops vibrating the substrate, and stops changing the ultrasonic or megasonic device and the reflector The distance; and removing the substrate from the metal salt electrolyte.