TWI639256B - Semiconductor light emitting apparatus - Google Patents

Abstract

A semiconductor light emitting device includes a semiconductor light emitting element, a lens, and a first anti-glare cover. The lens has a first first light incident side and a first light exiting side, and the first light incident side is adjacent to the semiconductor light emitting element. The first anti-glare cover has opposite second light-incident side and second light-emitting side and an annular side wall connected between the second light-incident side and the second light-emitting side. The second light incident side has an light entrance port, and the second light exiting side has a light exit opening. The inner diameter of the annular side wall gradually increases from the light entrance opening toward the light exit opening, and the outer surface of the annular side wall has a plurality of adjacent V rows. a groove, each V-shaped groove extending from the second light incident side to the second light exiting side. This semiconductor light emitting device has an anti-glare function.

Description

Semiconductor light emitting device

The present invention relates to a light emitting device, and more particularly to a semiconductor light emitting device.

With the development and advancement of technology, all kinds of lighting devices are also advancing with the times to meet the needs of modern people. Among many lighting devices, LEDs have gradually replaced traditional lighting devices (such as fluorescent lamps and incandescent bulbs) due to their low heat generation, low power consumption, long life and small size. .

In order to adjust the illumination effect of the light-emitting diode, the conventional technique generally adopts a method of covering the lens above the light-emitting diode, so that the light provided by the light-emitting diode passes through the lens to generate a suitable light-shaped distribution. Although the purpose of adjusting the light shape can be achieved by using a lens, the problem of glare cannot be effectively solved.

The present invention provides a semiconductor light emitting device to improve the problem of glare.

In order to achieve the above advantages or other advantages, an embodiment of the present invention provides a semiconductor light emitting device including a semiconductor light emitting element, a lens, and a first anti-glare cover. The lens has a first first light incident side and a first light exiting side, and the first light incident side is adjacent to the semiconductor light emitting element. The first anti-glare cover has opposite second light-incident side and second light-emitting side and an annular side wall connected between the second light-incident side and the second light-emitting side. The second light incident side has an light entrance port, and the second light exiting side has a light exit opening. The inner diameter of the annular side wall gradually increases from the light entrance opening toward the light exit opening, and the outer surface of the annular side wall has a plurality of adjacent V rows. a groove, each V-shaped groove extending from the second light incident side to the second light exiting side.

In an embodiment of the invention, the inner surface of the annular side wall has a rhombic score.

In an embodiment of the invention, the second light incident side is parallel to the second light exiting side.

In an embodiment of the invention, the second light incident side is not parallel to the second light exiting side, and the second light exiting side is parallel to the first light exiting side of the lens.

In an embodiment of the invention, the first light incident side of the lens has a groove structure.

In an embodiment of the invention, the semiconductor light emitting device further includes a heat dissipating component, wherein the semiconductor light emitting component is disposed on the heat dissipating component.

In an embodiment of the invention, the semiconductor light emitting device further includes a housing, and the heat dissipating component has a bearing portion and a fin portion. The housing houses the semiconductor light emitting element and the lens, and the carrying portion is located inside the housing to carry the semiconductor light emitting element, and the fin portion is located outside the housing and connected to the carrying portion.

In an embodiment of the invention, the semiconductor light emitting device further includes a fixing frame coupled to the sidewall of the housing, wherein the first anti-glare cover is fixed to the fixing frame.

In an embodiment of the invention, the semiconductor light-emitting device further includes a top cover fixed to the fixing frame and covering the second light-emitting side of the first anti-glare cover, wherein the top cover has an opening to expose a portion of the light emitted from the second light-emitting side. mouth.

In an embodiment of the invention, the angle between the two side walls of each of the V-shaped grooves gradually decreases or gradually decreases from the second light-emitting side of the first anti-glare cover toward the second light-incident side of the first anti-glare cover. Become bigger.

In an embodiment of the present invention, the angle between the ends of the two side walls of the V-shaped grooves on the second light-emitting side is φ, and the angle between the ends of the two side walls of the V-shaped grooves on the second light-incident side It is σ, and φ-30°≦σ≦φ+30°, φ and σ are respectively greater than or equal to 60°.

In an embodiment of the invention, the semiconductor light-emitting device further includes a second anti-glare cover disposed between the first anti-glare cover and the lens, wherein the second anti-glare cover has opposite third light-incident sides and a third On the light exit side, openings are formed on the third light incident side and the third light exit side, respectively.

In an embodiment of the invention, the second anti-glare cover further has a joint extending from the third light incident side, and the joint portion is coupled to the lens.

The semiconductor light-emitting device of the present invention has a first anti-glare cover disposed above the lens, and the outer surface of the annular side wall of the first anti-glare cover has a plurality of V-shaped grooves arranged adjacently, so that the glare can be effectively improved. .

The above and other objects, features and advantages of the present invention will become more <RTIgt;

1 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention, and FIG. 2 is a perspective view of the first anti-glare cover of FIG. Referring to FIG. 1 and FIG. 2 , the semiconductor light emitting device 100 of the present embodiment includes a semiconductor light emitting device 110 , a lens 120 , and a first anti-glare cover 130 , wherein the lens 120 is located between the semiconductor light emitting device 110 and the first anti-glare cover 130 . The lens 120 has a first first light incident side 121 and a first light exit side 122, and the first light incident side 121 is adjacent to the semiconductor light emitting element 110. The first anti-glare cover 130 has opposite second light-incident side 131 and second light-emitting side 132 and annular side wall 133 connected between the second light-incident side 131 and the second light-emitting side 132. The second light incident side 131 has a light entrance 134, and the second light exit side 132 has a light exit 135. The inner diameter D of the annular sidewall 133 gradually increases from the light entrance 134 toward the light exit 135, and the outer side of the annular sidewall 133. The surface 136 has a plurality of V-shaped grooves 137 arranged adjacent to each other, and each of the V-shaped grooves 137 extends from the second light incident side 131 to the second light exit side 132.

The semiconductor light-emitting device 110 described above includes, for example, a substrate 111 and a semiconductor light-emitting source 112 disposed on the substrate 111, such as a light-emitting diode wafer or other semiconductor light-emitting source. The semiconductor light emitting element 110 is used to provide light to the lens 120, and the lens 120 is used to adjust the light shape. For example, the first light incident side 121 of the lens 120 described above has, for example, a groove structure 123. The specific shape of the groove structure 123 can be adjusted as needed. The shape, angle, and the like of each wall surface 124 of the groove structure 123 are designed to adjust the light refraction path, and the shape, angle, and the like of the side surface 125 between the first light incident side 121 and the first light exit side 122 of the lens 120 are matched. The design can change the path of the light reflected from the side surface 125 of the lens 120, so that the light shape of the light emerging from the first light exiting side 122 can be adjusted.

In order to improve the glare problem of the prior art, the semiconductor light emitting device 100 of the present embodiment is provided with a first anti-glare cover 130 above the lens 120, and the outer surface 136 of the annular sidewall 133 of the first anti-glare cover 130 has an adjacent arrangement. A plurality of V-shaped grooves 137. As shown in FIG. 3, a mast 191 is formed between the adjacent two V-shaped grooves 137, and the light L entering the annular side wall 133 from the inner surface 139 of the annular side wall 133 may be sequentially followed by the mast 191. The two side walls 192 are totally reflective, so the arrangement of the V-shaped grooves 137 enables the first anti-glare cover 130 to have a better light reflection and anti-glare effect. In addition, the angle θ1 between the two side walls 138 of each V-shaped groove 137 may be determined according to different design requirements. For example, if the light L entering the mast 191 is to be parallel to the light L leaving the mast 191, the angle θ1 can be designed to be 90 degrees so that the angle θ2 between the two side walls 192 of the mast 191 is It is 90 degrees. In addition, in order to match the semiconductor light source 112 of different characteristics and the lens 120 of different shapes, the angle θ1 between the two side walls 138 of each V-shaped groove 137 can also be designed to be different angles, thereby changing the angle of the angle θ2.

Referring to FIG. 2 and FIG. 3, the angle θ1 of the single V-shaped groove 137 may also vary. For example, the angle θ1 may gradually decrease or gradually increase from the second light exiting side 132 of the first anti-glare cover 130 toward the second light incident side 131 of the first anti-glare cover 130. In an embodiment, the angle θ1 of the V-shaped groove 137 at one end of the second light-emitting side 132 is, for example, φ, and the angle θ1 of the V-shaped groove 137 at one end of the second light-incident side 131 is, for example, σ. Wherein φ-30° ≦ σ ≦ φ + 30°, and φ and σ are, for example, greater than or equal to 60°, respectively. In addition to meeting the design requirements, such angle design also helps to improve machining accuracy.

In general, among the light rays emerging from the first light exiting side 122 of the lens 120 of FIG. 1, light having a large exit angle generally causes glare. 4 is a schematic view of the first anti-glare cover of FIG. 1 for improving glare. Referring to FIG. 3 and FIG. 4 , when the light L1 that causes the glare has a large exit angle enters the first anti-glare cover 130 via the second light-incident side 131, the light L1 enters the annular sidewall 133, and then passes through the mast. The two side walls 192 of the 191 are reflected (as shown in FIG. 3) and are emitted from the second light exiting side 132, and the exit angle of the light L1 is also reduced by the design of the angle θ1. Therefore, in addition to the situation in which the glare is effectively improved, the first anti-glare cover 130 of the present embodiment can also convert the light L1 which would originally cause glare into light that is effectively utilized, thereby improving the light utilization efficiency.

Referring again to FIGS. 1 and 2, in order to further improve the problem of glare, the inner surface 139 of the annular side wall 133 may have a rhombic score 139a. The width of each notch of the rhombic indentation 139a may be between 0.4 mm and 5 mm, and the depth of the indentation is, for example, between 0.1 mm and 0.5 mm. The plaid notch 139a can have a homogenizing spot effect, and can make the appearance of the semiconductor light-emitting device 100 visually closer to the conventional luminaire, and the user acceptance is higher.

In this embodiment, the second light-incident side 131 of the first anti-glare cover 130 is inclined relative to the second light-emitting side 132, that is, the second light-incident side 131 of the first anti-glare cover 130 is not parallel to the second light-emitting side. Side 132. Moreover, the second light exiting side 132 is, for example, parallel to the first light exiting side 122 of the lens 120. Such a design can increase the amount of light received and avoid excessive energy loss of light entering the first anti-glare cover 130 via the lens 120.

In other embodiments, the first anti-glare cover 130 may be disposed such that the second light-incident side 131 is parallel to the first light-emitting side 122 of the lens 120 or the second light-incident side 131 and the second light-emitting side 132. Neither is parallel to the first light exit side 122 of the lens 120. In addition, the present invention does not limit the second light-incident side 131 from being parallel to the second light-emitting side 132. In another embodiment, the first anti-glare cover 130 may also be designed such that the second light-incident side 131 is parallel to the second. Light exit side 132.

FIG. 5 is a cross-sectional view showing a semiconductor light emitting device according to another embodiment of the present invention. Referring to FIG. 5 , the semiconductor light emitting device 100 a of the present embodiment is similar to the semiconductor light emitting device 100 described above. The difference is that the semiconductor light emitting device 100 a further includes a heat dissipating component 140 , wherein the semiconductor light emitting component 110 is disposed on the heat dissipating component 140 . The present invention does not limit the specific shape and material of the heat dissipating component 140.

In the present embodiment, the semiconductor light emitting device 100a further includes a housing 180, for example. The heat dissipating member 140 has, for example, a carrier portion 142 and a fin portion 143. The housing 180 houses the semiconductor light emitting element 110 and the lens 120. In detail, the housing 180 has a bottom wall 181 and a side wall 182 , and an accommodation space S is formed between the bottom wall 181 and the side wall 182 to accommodate the semiconductor light emitting element 110 and the lens 120 . In addition, the carrying portion 142 is located inside the housing 180 (ie, located in the accommodating space S) to carry the semiconductor light emitting element 110. The fin portion 143 is located outside the housing 180 and is coupled to the carrier portion 142. The fin portion 143 and the carrying portion 142 may be connected to each other through a through hole (not shown) passing through the bottom wall 181 of the housing 180. The heat generated by the semiconductor light emitting element 110 can be transferred to the fin portion 143 via the carrier portion 142 for heat dissipation. In another embodiment, the housing 180 may be made of a metal material having a heat dissipation effect, for example, the housing 180 is made of the same material as the heat dissipation member 140. As such, the bottom wall 181 of the housing 180 may have no through holes, and the fin portion 143 may be coupled to the carrier portion 142 by the bottom wall 181 of the housing 180.

The semiconductor light-emitting device 100a further includes a fixing frame 150 coupled to the sidewall 182 of the housing 180, and the first anti-glare cover 130 is fixed to the fixing frame 150. The holder 150 is fixed to the side wall 182 of the housing 180 via a fixing member 151, for example. The first anti-glare cover 130 is fixed to the top of the fixing frame 150 by, for example, the second light-emitting side 132. In addition, according to different design requirements, the semiconductor light emitting device 100a may further include a top cover 160 fixed to the fixing frame 150 and covering the second light exiting side 132 of the first anti-glare cover 130, wherein the top cover 160 has an opening 161 to expose the first A portion of the light exit opening 132 of the second light exiting side 132.

6 is a cross-sectional view showing a semiconductor light emitting device according to another embodiment of the present invention. Referring to FIG. 6 , the semiconductor light-emitting device 100 b of the present embodiment is similar to the above-described semiconductor light-emitting device 100 a . The difference is that the semiconductor light-emitting device 100 b of the present embodiment further includes a second anti-glare cover 170 disposed on the first anti-glare cover 130 . Between the lens 120 and the lens 120. The second anti-glare cover 170 has opposite third light-incident side 171 and third light-emitting side 172, and the third light-incident side 171 and the third light-emitting side 172 are respectively formed with openings 173, 174 to make the first from the lens 120. The light emitted from the light exiting side 122 passes. The inner surface of the annular side wall 175 of the second anti-glare cover 170 between the third light-incident side 171 and the third light-emitting side 172 is, for example, curved, but its shape can be adjusted according to design requirements. In addition, the second anti-glare cover 170 further has a joint portion 176 extending from the third light incident side 171, and the joint portion 176 is coupled to the lens 120. The joint 176 has, for example, an annular chassis 177 that bears against the first light exit side 122 of the lens 120 and a sidewall 178 that extends from the annular chassis 177, wherein the sidewall 178 surrounds the first light exit side 122 of the lens 120.

Since the semiconductor light-emitting device 100b of the present embodiment has the first anti-glare cover 130 and the second anti-glare cover 170, the problem of glare can be further improved. Further, the semiconductor light-emitting device (such as the semiconductor light-emitting device 100 of FIG. 1) of each of the above embodiments may be provided with the second anti-glare cover 170.

In summary, the semiconductor light emitting device of the embodiment of the present invention has a first anti-glare cover disposed above the lens, and the outer surface of the annular sidewall of the first anti-glare cover has a plurality of V-shaped grooves arranged adjacent to each other. Therefore, it can effectively improve the glare situation. In one embodiment, the semiconductor light-emitting device has a second anti-glare cover disposed between the first anti-glare cover and the lens, so that the glare can be further improved.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100, 100a, 100b‧‧‧ semiconductor light-emitting devices

110‧‧‧Semiconductor light-emitting components

111‧‧‧Substrate

112‧‧‧Semiconductor light source

120‧‧‧ lens

121‧‧‧first light side

122‧‧‧first light side

123‧‧‧ Groove structure

124‧‧‧ wall

125‧‧‧ side

130‧‧‧First anti-glare cover

131‧‧‧Second entrance side

132‧‧‧Second light side

133‧‧‧ annular side wall

134‧‧‧Into the light port

135‧‧‧ light exit

136‧‧‧ outer surface

137‧‧‧V-shaped groove

138‧‧‧ side wall

139‧‧‧ inner surface

139a‧‧‧ plaid scoring

140‧‧‧Heat components

142‧‧‧Loading Department

143‧‧‧Fin section

150‧‧‧Retaining frame

151‧‧‧Fixed parts

160‧‧‧Top cover

161‧‧‧ openings

170‧‧‧Second anti-glare cover

171‧‧‧ third light side

172‧‧‧the third light side

173, 174‧‧

175‧‧‧ annular side wall

176‧‧‧Combination Department

177‧‧‧ ring chassis

178‧‧‧ side wall

180‧‧‧shell

181‧‧‧ bottom wall

182‧‧‧ side wall

191‧‧‧稜鏡柱

192‧‧‧ side wall

D‧‧‧Inner diameter

L, L1‧‧‧ rays

S‧‧‧ accommodating space

Θ1, θ2‧‧‧ angle

1 is a cross-sectional view showing a semiconductor light emitting device according to an embodiment of the present invention. 2 is a perspective view of the first anti-glare cover of FIG. 1. 3 is a schematic view of a V-shaped groove and a light path of a first anti-glare cover according to an embodiment of the present invention. 4 is a schematic view of the first anti-glare cover of FIG. 1 for improving glare. FIG. 5 is a cross-sectional view showing a semiconductor light emitting device according to another embodiment of the present invention. 6 is a cross-sectional view showing a semiconductor light emitting device according to another embodiment of the present invention.

Claims (13)

A semiconductor light emitting device comprising: a semiconductor light emitting element; a lens having a first light incident side and a first light exiting side, the first light incident side being adjacent to the semiconductor light emitting element; and a first anti-glare cover Having a second light-incident side and a second light-emitting side, and an annular side wall connected between the second light-incident side and the second light-emitting side, wherein the lens is disposed on the semiconductor light-emitting element and the first An anti-glare cover, and the second light-incident side is opposite to the first light-emitting side, the second light-incident side has an light-incident port, and the second light-emitting side has a light-emitting port, and the inner diameter of the ring-shaped side wall The light entrance port gradually becomes larger toward the light exit opening, and the outer surface of the annular side wall has a plurality of V-shaped grooves arranged adjacent to each other, and each of the V-shaped grooves extends from the second light incident side to the The second light exit side. The semiconductor light-emitting device of claim 1, wherein the inner surface of the annular side wall has a rhombic scribe. The semiconductor light emitting device of claim 1, wherein the second light incident side is parallel to the second light exiting side. The semiconductor light-emitting device of claim 1, wherein the second light-incident side is not parallel to the second light-emitting side, and the second light-emitting side is parallel to the first light-emitting side of the lens. The semiconductor light emitting device of claim 1, wherein the first light incident side of the lens has a groove structure. The semiconductor light emitting device of claim 1, further comprising a heat dissipating component, wherein the semiconductor light emitting component is disposed on the heat dissipating component. The semiconductor light-emitting device of claim 6, further comprising a casing, wherein the heat dissipating component has a bearing portion and a fin portion, wherein the casing houses the semiconductor light-emitting component and the lens, the bearing The portion is located inside the casing to carry the semiconductor light emitting element, and the fin portion is located outside the casing and connected to the bearing portion. The semiconductor light-emitting device of claim 7, further comprising a fixing frame coupled to a side wall of the housing, wherein the first anti-glare cover is fixed to the fixing frame. The semiconductor light-emitting device of claim 8, further comprising a top cover fixed to the fixing frame and covering the second light-emitting side of the first anti-glare cover, wherein the top cover has an opening to expose The portion of the second light exiting side is the light exit opening. The semiconductor light-emitting device of claim 1, wherein an angle between the two side walls of each of the V-shaped grooves is from the second light-emitting side of the first anti-glare cover toward the first anti-glare cover The second light entering side gradually becomes smaller or gradually becomes larger. The semiconductor light-emitting device of claim 10, wherein an angle of one end of each of the two sidewalls of the V-shaped groove on the second light-emitting side is φ, and the two sidewalls of each of the V-shaped trenches are located The angle of one end of the second light incident side is σ, and φ-30° ≦ σ ≦ φ + 30 °, and φ and σ are respectively greater than or equal to 60°. The semiconductor light-emitting device of any one of claims 1 to 11, further comprising a second anti-glare cover disposed between the first anti-glare cover and the lens, wherein the second anti-glare cover has An opposite third light entrance side and a third light exit side are formed, and the third light incident side and the third light exit side respectively form an opening. The semiconductor light-emitting device of claim 12, wherein the second anti-glare cover further has a joint extending from the third light-incident side, the joint being coupled to the lens.