TWI638068B - Copper alloy porous wick and preparation method thereof - Google Patents
Copper alloy porous wick and preparation method thereof Download PDFInfo
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- TWI638068B TWI638068B TW106144627A TW106144627A TWI638068B TW I638068 B TWI638068 B TW I638068B TW 106144627 A TW106144627 A TW 106144627A TW 106144627 A TW106144627 A TW 106144627A TW I638068 B TWI638068 B TW I638068B
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- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 72
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000004070 electrodeposition Methods 0.000 claims abstract description 25
- 238000005245 sintering Methods 0.000 claims abstract description 19
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims abstract description 18
- 229910000365 copper sulfate Inorganic materials 0.000 claims abstract description 17
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000011259 mixed solution Substances 0.000 claims abstract description 4
- 239000004094 surface-active agent Substances 0.000 claims abstract description 4
- 230000003213 activating effect Effects 0.000 claims abstract description 3
- 239000007864 aqueous solution Substances 0.000 claims abstract description 3
- 238000005406 washing Methods 0.000 claims abstract description 3
- 238000004140 cleaning Methods 0.000 claims abstract 2
- 238000001035 drying Methods 0.000 claims abstract 2
- 229910001369 Brass Inorganic materials 0.000 claims description 21
- 239000010951 brass Substances 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 230000001965 increasing effect Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000010956 nickel silver Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 14
- 239000012530 fluid Substances 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 239000003792 electrolyte Substances 0.000 abstract description 3
- 150000007514 bases Chemical class 0.000 abstract description 2
- 230000035699 permeability Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 13
- 238000002791 soaking Methods 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 229910001297 Zn alloy Inorganic materials 0.000 description 4
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical class [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241000519995 Stachys sylvatica Species 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000011664 nicotinic acid Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/623—Porosity of the layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
- F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
- F28D15/04—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure
- F28D15/046—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure characterised by the material or the construction of the capillary structure
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Electroplating Methods And Accessories (AREA)
- Powder Metallurgy (AREA)
- Cell Electrode Carriers And Collectors (AREA)
Abstract
本發明提供一種銅合金多孔吸液芯的製備方法,包括如下步驟:(a)配製電解液,為包括體積莫耳濃度為每公升0.5至1.8莫耳之硫酸和體積莫耳濃度為每公升0.1至0.5莫耳之硫酸銅的水溶液;(b)採用表面活性劑和鹼性化合物的混合溶液對銅合金基底表面進行清洗,再用稀鹽酸活化,然後清洗乾淨;(c)將處理後的基底在電解液中電沉積以在基底上形成多孔結構;以及(d)對步驟(c)得到的產物水洗、乾燥後,燒結。通過本發明方法可以在基底表面直接獲得具有特定排布的、具有優異毛細力和滲透度的多孔結構,有利於工質傳輸。 The present invention provides a method for preparing a copper alloy porous liquid wick, including the following steps: (a) preparing an electrolyte solution including sulfuric acid having a volumetric molar concentration of 0.5 to 1.8 mol per liter and a volumetric molar concentration of 0.1 per liter To 0.5 mol copper sulfate aqueous solution; (b) using a mixed solution of a surfactant and a basic compound to clean the surface of the copper alloy substrate, then activating it with dilute hydrochloric acid, and then cleaning it; (c) treating the substrate Electrodeposition in an electrolyte to form a porous structure on the substrate; and (d) washing the product obtained in step (c) with water, drying, and sintering. The method of the present invention can directly obtain a porous structure with a specific arrangement and excellent capillary force and permeability on the surface of the substrate, which is beneficial to the transmission of working fluid.
Description
本發明涉及均熱板結構吸液芯結構,特別涉及一種通過軟模板法製備的通孔均熱板吸液芯製備方法。 The invention relates to a liquid wick structure of a soaking plate structure, in particular to a method for preparing a liquid wick of a through hole soaking plate prepared by a soft template method.
隨著科學技術的發展,電子產品逐漸趨於微小化,由於電子產品的功能越來越多,其散熱元件越來越集中在更小的範圍內。因此電子產品的散熱是產品設計和生產組裝過程中必須考慮的一個重要議題。 With the development of science and technology, electronic products are gradually becoming smaller. As electronic products have more and more functions, their heat dissipation components are increasingly concentrated in a smaller range. Therefore, the heat dissipation of electronic products is an important issue that must be considered in the product design and production assembly process.
依靠相變散熱而發明的熱管、均熱板等電子產品散熱器件也應運而生,並在產品功能中提供了很好的散熱保證。也因此,諸如此類的散熱器件給製造廠商創造了不菲的價值和利潤。均熱板等散熱器件的散熱功率也亟待進一步的提高。發明專利申請案CN103542749A公開了一種仿生均熱板吸液芯,該吸液芯結構有利於工質的傳輸,提高了均熱板的散熱能力,但由於結構較為複雜,需要用到光刻等複雜且昂貴的設備。發明專利申請案CN106435665A通過電化學沉積製備一種具有天然多尺度樹枝狀微針翅銅表面結構作為熱管或均熱板的吸液芯結構,但該結構容易造成工質被氣流攜帶,降低傳熱效率。且通過 電化學沉積方法製備的多孔結構與基底結合力弱,力學強度差等問題,對產品的可靠性和壽命方面帶來巨大挑戰。 Electronic products such as heat pipes and soaking plates, which rely on phase change heat dissipation, have also emerged at the historic moment, and provide good heat dissipation guarantee in product functions. As a result, such radiator components have created a lot of value and profits for manufacturers. The heat dissipation power of heat sinks such as soaking plates also needs to be further improved. The invention patent application CN103542749A discloses a bionic soaking plate liquid wick. The structure of the wick is beneficial to the transfer of working fluid and improves the heat dissipation ability of the soaking plate. And expensive equipment. Invention patent application CN106435665A uses electrochemical deposition to prepare a liquid-absorbent core structure with a natural multi-scale dendritic microneedle-fin copper surface structure as a heat pipe or soaking plate, but this structure is likely to cause the working fluid to be carried by the air stream and reduce heat transfer efficiency . And pass Porous structures prepared by electrochemical deposition methods have problems such as weak bonding with the substrate and poor mechanical strength, which pose great challenges to the reliability and life of the product.
為克服以上缺點和不足,本發明的目的在於提供一種銅合金多孔吸液芯的製備方法,包括如下步驟:(a)配製電解液,為包括體積莫耳濃度為每公升0.5至1.8莫耳之硫酸和體積莫耳濃度為每公升0.1至0.5莫耳之硫酸銅的水溶液;(b)採用表面活性劑和鹼性化合物的混合溶液對銅合金基底表面進行清洗,再用稀鹽酸活化,然後清洗乾淨;(c)將處理後的基底在該電解液中電沉積以在該基底上形成多孔結構;以及(d)對步驟(c)得到的產物水洗及乾燥後,燒結。 In order to overcome the above shortcomings and deficiencies, an object of the present invention is to provide a method for preparing a copper alloy porous wick, including the following steps: (a) preparing an electrolytic solution to include a volumetric mole concentration of 0.5 to 1.8 moles per liter; An aqueous solution of sulfuric acid and copper sulphate with a volumetric mole concentration of 0.1 to 0.5 mol per liter; (b) using a mixed solution of a surfactant and a basic compound to clean the surface of the copper alloy substrate, then activating it with dilute hydrochloric acid, and then washing Clean; (c) electrodeposit the treated substrate in the electrolyte to form a porous structure on the substrate; and (d) wash and dry the product obtained in step (c), and sinter.
根據本發明的一實施方式,採用恆定電流密度方式進行電沉積,恆定電流密度為每平方公分0.5至5安培,沉積時間為20秒至10分鐘。 According to an embodiment of the present invention, the electrodeposition is performed by a constant current density method, the constant current density is 0.5 to 5 amperes per square centimeter, and the deposition time is 20 seconds to 10 minutes.
根據本發明的另一實施方式,該電流密度為每平方公分0.8至1.5安培,沉積時間為50至90秒。 According to another embodiment of the present invention, the current density is 0.8 to 1.5 amps per square centimeter, and the deposition time is 50 to 90 seconds.
根據本發明的另一實施方式,採用逐漸增大電流密度的方式進行電沉積,起始電流密度為每平方公分0.01至0.1安培、電流密度增速為每平方公分秒0.001至0.05安培、沉積時間為10秒至10分鐘。 According to another embodiment of the present invention, electrodeposition is performed by gradually increasing the current density. The initial current density is 0.01 to 0.1 amperes per square centimeter, the current density growth rate is 0.001 to 0.05 amperes per square centimeter per second, and the deposition time For 10 seconds to 10 minutes.
根據本發明的另一實施方式,採用逐漸減小電流密度的方式進行電沉積,起始電流密度為每平方公分0.5至5安培、電流密度減小速度為每平方公分秒0.001至0.05安培、沉積時間為10秒至10分鐘。 According to another embodiment of the present invention, the electrodeposition is performed by gradually reducing the current density. The initial current density is 0.5 to 5 amperes per square centimeter, and the current density reduction rate is 0.001 to 0.05 amperes per square centimeter per second. The time is 10 seconds to 10 minutes.
根據本發明的另一實施方式,該基底為黃銅、錫黃銅、鉛黃銅、鋁黃銅、鎳黃銅或鐵黃銅。 According to another embodiment of the present invention, the substrate is brass, tin brass, lead brass, aluminum brass, nickel brass, or iron brass.
根據本發明的另一實施方式,該燒結是在保護氣氛、還原氣氛或真空環境、攝氏溫度450至750度下燒結。 According to another embodiment of the present invention, the sintering is performed in a protective atmosphere, a reducing atmosphere, or a vacuum environment at a temperature of 450 to 750 degrees Celsius.
根據本發明的另一實施方式,該保護氣氛為選自氮氣、氬氣中的至少一種。該還原氣氛為氮氣和氫氣的混合氣。 According to another embodiment of the present invention, the protective atmosphere is at least one selected from nitrogen and argon. The reducing atmosphere is a mixed gas of nitrogen and hydrogen.
本發明更提供一種銅合金多孔吸液芯,由上述方法製成。 The invention further provides a copper alloy porous liquid wick, which is made by the above method.
本發明採用電沉積和燒結的複合方式製備的多孔吸液芯,電沉積製備的純銅多孔結構經過高溫處理,利用奈米效應將奈米結構進行了重新排佈,增強了其結構強度。本發明的方法可以用於各種形狀的熱管和均熱板產品上,多孔結構厚度可在10微米(μm)以上任意調節,為產品的個性化設計提供新的方向。通過本發明方法可以在基底表面直接獲得具有特定排佈的、具有優異毛細力和滲透度的多孔結構,有利於工質傳輸。 In the present invention, a porous wick prepared by a composite method of electrodeposition and sintering is used. The pure copper porous structure prepared by electrodeposition is subjected to high temperature treatment, and the nanostructure is rearranged by using the nano effect, thereby enhancing its structural strength. The method of the present invention can be applied to various shapes of heat pipes and soaking plates. The thickness of the porous structure can be arbitrarily adjusted above 10 microns (μm), which provides a new direction for the personalized design of the product. The method of the present invention can directly obtain a porous structure with a specific arrangement and excellent capillary force and permeability on the surface of the substrate, which is beneficial to the transmission of working fluid.
圖1(a)、圖1(b)、圖1(c)及圖1(d)是本發明實施例1製備的多孔吸液芯鑲嵌截面的掃描電子顯微鏡照片和元素分佈圖。 FIG. 1 (a), FIG. 1 (b), FIG. 1 (c), and FIG. 1 (d) are scanning electron microscope photos and element distribution diagrams of a porous wick inlay section prepared in Example 1 of the present invention.
圖2(a)及圖2(b)是本發明實施例1製備的多孔吸液芯表面掃描電子顯微鏡照片。 2 (a) and 2 (b) are scanning electron microscope photographs of the surface of the porous wick prepared in Example 1 of the present invention.
下面結合具體實施例對本發明作詳細說明。但本發明的保護範圍不限於下述的實施例。 The present invention is described in detail below with reference to specific embodiments. However, the protection scope of the present invention is not limited to the following embodiments.
實施例1 Example 1
稱取一定量的硫酸銅,將硫酸銅溶解在去離子水中形成硫酸銅溶液,然後向硫酸銅溶液中加入合適量的濃硫酸,得到體積莫耳濃度為每公升0.5莫耳(mol/L)之硫酸和體積莫耳濃度為每公升0.1莫耳(mol/L)之硫酸銅的電解液。 Weigh a certain amount of copper sulfate, dissolve the copper sulfate in deionized water to form a copper sulfate solution, and then add an appropriate amount of concentrated sulfuric acid to the copper sulfate solution to obtain a volume mole concentration of 0.5 moles per liter (mol / L) Electrolyte having a sulfuric acid and volume mol concentration of 0.1 mol / L copper sulfate per liter.
以H70黃銅為基底,採用表面活性劑和鹼性化合物的混合溶液對基底進行清洗,再用稀鹽酸活化,然後用去離子水清洗乾淨。 H70 brass was used as the substrate, and the substrate was washed with a mixed solution of a surfactant and an alkaline compound, then activated with dilute hydrochloric acid, and then cleaned with deionized water.
將處理後的基底在配製的溶液中採用恆定電流密度方式進行電沉積,以在基底上形成多孔結構,其中電沉積溫度為攝氏溫度20度,電流密度為每平方公分0.5安培(A/cm2),時間為10分鐘。 The treated substrate was electrodeposited in a prepared solution using a constant current density method to form a porous structure on the substrate. The electrodeposition temperature was 20 degrees Celsius and the current density was 0.5 amps per square centimeter (A / cm 2 ) For 10 minutes.
將基底及其上的多孔結構水洗、乾燥後,在真空燒結爐中以攝氏溫度450度燒結。 The substrate and the porous structure thereon were washed with water and dried, and then sintered at 450 ° C in a vacuum sintering furnace.
實施例2 Example 2
以與實施例1相同的方法製備電解液,除了硫酸的濃度為每公升1.8莫耳(mol/L),硫酸銅的濃度為每公升0.5莫耳(mol/L)。 An electrolytic solution was prepared in the same manner as in Example 1, except that the concentration of sulfuric acid was 1.8 moles (mol / L) per liter, and the concentration of copper sulfate was 0.5 moles (mol / L) per liter.
以鐵黃銅為基底,以與實施例1相同的方法預處理基底。 Using iron brass as a substrate, the substrate was pretreated in the same manner as in Example 1.
將處理後的基底在配製的溶液中採用恆定電流密度方式進行電沉積,以在基底上形成多孔結構,其中電沉積溫度為室溫,電流密度為每平方公分0.8安培(A/cm2),時間為90秒。 The treated substrate was electrodeposited in a prepared solution using a constant current density method to form a porous structure on the substrate. The electrodeposition temperature was room temperature and the current density was 0.8 amperes per square centimeter (A / cm 2 ). The time is 90 seconds.
將基底及其上的多孔結構水洗、乾燥後,在真空燒結爐中以攝氏溫度500度燒結。 The substrate and the porous structure thereon were washed with water and dried, and then sintered in a vacuum sintering furnace at 500 degrees Celsius.
實施例3 Example 3
以與實施例1相同的方法製備電解液,除了硫酸的濃度為每公升1.0莫耳(mol/L),硫酸銅的濃度為每公升0.2莫耳(mol/L)。 An electrolytic solution was prepared in the same manner as in Example 1, except that the concentration of sulfuric acid was 1.0 mole (mol / L) per liter, and the concentration of copper sulfate was 0.2 mole (mol / L) per liter.
以鉛黃銅為基底,以與實施例1相同的方法預處理基底。 Using lead brass as a substrate, the substrate was pretreated in the same manner as in Example 1.
將處理後的基底在配製的溶液中採用恆定電流密度方式進行電沉積,以在基底上形成多孔結構,其中電沉積溫度為攝氏溫度20度,電流密度為每平方公分1.5安培(A/cm2),時間為50秒。 The treated substrate was electrodeposited in a prepared solution using a constant current density method to form a porous structure on the substrate. The electrodeposition temperature was 20 degrees Celsius and the current density was 1.5 amperes per square centimeter (A / cm 2 ) For 50 seconds.
將基底及其上的多孔結構水洗、乾燥後,在真空燒結爐中以攝氏溫度600度燒結。 The substrate and the porous structure thereon are washed with water and dried, and then sintered in a vacuum sintering furnace at a temperature of 600 degrees Celsius.
實施例4 Example 4
以與實施例1相同的方法製備電解液,除了硫酸的濃度為每公升0.8莫耳(mol/L),硫酸銅的濃度為每公升0.2莫耳(mol/L)。 An electrolytic solution was prepared in the same manner as in Example 1, except that the concentration of sulfuric acid was 0.8 moles (mol / L) per liter, and the concentration of copper sulfate was 0.2 moles (mol / L) per liter.
以鋁黃銅為基底,以與實施例1相同的方法預處理基底。 Using aluminum brass as a substrate, the substrate was pretreated in the same manner as in Example 1.
將處理後的基底在配製的溶液中採用恆定電流密度方式進行電沉積,以在基底上形成多孔結構,其中電沉積溫度為攝氏溫度20度,電流密度為每平方公分5安培(A/cm2),時間為20秒。 The treated substrate was electrodeposited in a prepared solution using a constant current density method to form a porous structure on the substrate. The electrodeposition temperature was 20 degrees Celsius and the current density was 5 amperes per square centimeter (A / cm 2 ) For 20 seconds.
將基底及其上的多孔結構水洗、乾燥後,在真空燒結爐中以攝氏溫度750度燒結。 The substrate and the porous structure thereon are washed with water and dried, and then sintered in a vacuum sintering furnace at a temperature of 750 degrees Celsius.
實施例5 Example 5
以與實施例1相同的方法製備電解液,除了硫酸的濃度為每公升0.7莫耳(mol/L),硫酸銅的濃度為每公升0.3莫耳(mol/L)。 An electrolytic solution was prepared in the same manner as in Example 1, except that the concentration of sulfuric acid was 0.7 moles (mol / L) per liter, and the concentration of copper sulfate was 0.3 moles (mol / L) per liter.
以H68黃銅為基底,以與實施例1相同的方法預處理基底。 H68 brass was used as the substrate, and the substrate was pretreated in the same manner as in Example 1.
將處理後的基底在配製的溶液中採用恆定電流密度方式進行電沉積,以在基底上形成多孔結構,其中電沉積溫度為攝氏溫度20度,電流密度為每平方公分1安培(A/cm2),時間為1分鐘。 The treated substrate was electrodeposited in a prepared solution using a constant current density method to form a porous structure on the substrate. The electrodeposition temperature was 20 degrees Celsius and the current density was 1 amp per square centimeter (A / cm 2 ) For 1 minute.
將基底及其上的多孔結構水洗、乾燥後,在真空燒結爐中以攝氏溫度700度燒結。 The substrate and the porous structure thereon were washed with water and dried, and then sintered in a vacuum sintering furnace at 700 degrees Celsius.
實施例6 Example 6
以與實施例1相同的方法製備電解液,除了硫酸的濃度為每公升0.5莫耳(mol/L),硫酸銅的濃度為每公升0.1莫耳(mol/L)。 An electrolytic solution was prepared in the same manner as in Example 1, except that the concentration of sulfuric acid was 0.5 moles (mol / L) per liter, and the concentration of copper sulfate was 0.1 moles (mol / L) per liter.
以H70黃銅為基底,以與實施例1相同的方法預處理基底。 H70 brass was used as the substrate, and the substrate was pretreated in the same manner as in Example 1.
將處理後的基底在配製的溶液中採用逐漸減小電流密度的方式進行電沉積,以在基底上形成多孔結構,其中電沉積溫度為攝氏溫度20度,起始電流密度為每平方公分0.5安培(A/cm2),電流密度減速為每平方公分秒0.05安培(A/cm2.s),時間為10秒。 The treated substrate was electrodeposited in the prepared solution by gradually decreasing the current density to form a porous structure on the substrate. The electrodeposition temperature was 20 degrees Celsius and the initial current density was 0.5 amps per square centimeter. (A / cm 2 ), the current density is decelerated to 0.05 amps per square centimeter per second (A / cm 2 .s), and the time is 10 seconds.
將基底及其上的多孔結構水洗、乾燥後,在真空燒結爐中以攝氏溫度450度燒結。 The substrate and the porous structure thereon were washed with water and dried, and then sintered at 450 ° C in a vacuum sintering furnace.
實施例7 Example 7
以與實施例1相同的方法製備電解液,除了硫酸的濃度為每公升0.5莫耳(mol/L),硫酸銅的濃度為每公升0.1莫耳(mol/L)。 An electrolytic solution was prepared in the same manner as in Example 1, except that the concentration of sulfuric acid was 0.5 moles (mol / L) per liter, and the concentration of copper sulfate was 0.1 moles (mol / L) per liter.
以H70黃銅為基底,以與實施例1相同的方法預處理基底。 H70 brass was used as the substrate, and the substrate was pretreated in the same manner as in Example 1.
將處理後的基底在配製的溶液中採用逐漸減小電流密度的方式進行電沉積,以在基底上形成多孔結構,其中電沉積溫度為攝氏溫度20度,起 始電流密度為每平方公分2安培(A/cm2),電流密度減速為每平方公分秒0.002安培(A/cm2.s),時間為5分鐘。 The treated substrate was electrodeposited in the prepared solution by gradually reducing the current density to form a porous structure on the substrate. The electrodeposition temperature was 20 degrees Celsius and the initial current density was 2 amps per square centimeter. (A / cm 2 ), the current density is decelerated to 0.002 amps per square centimeter per second (A / cm 2 .s), and the time is 5 minutes.
將基底及其上的多孔結構水洗、乾燥後,在真空燒結爐中以攝氏溫度600度燒結。 The substrate and the porous structure thereon are washed with water and dried, and then sintered in a vacuum sintering furnace at a temperature of 600 degrees Celsius.
實施例8 Example 8
以與實施例1相同的方法製備電解液,除了硫酸的濃度為每公升0.5莫耳(mol/L),硫酸銅的濃度為每公升0.1莫耳(mol/L)。 An electrolytic solution was prepared in the same manner as in Example 1, except that the concentration of sulfuric acid was 0.5 moles (mol / L) per liter, and the concentration of copper sulfate was 0.1 moles (mol / L) per liter.
以H70黃銅為基底,以與實施例1相同的方法預處理基底。 H70 brass was used as the substrate, and the substrate was pretreated in the same manner as in Example 1.
將處理後的基底在配製的溶液中採用逐漸減小電流密度的方式進行電沉積,以在基底上形成多孔結構,其中電沉積溫度為攝氏溫度20度,起始電流密度為每平方公分5安培(A/cm2),電流密度減速為每平方公分秒0.001安培(A/cm2.s),時間為10分鐘。 The treated substrate was electrodeposited in the prepared solution by gradually reducing the current density to form a porous structure on the substrate. The electrodeposition temperature was 20 degrees Celsius and the initial current density was 5 amps per square centimeter. (A / cm 2 ), the current density is decelerated to 0.001 amps per square centimeter per second (A / cm 2 .s), and the time is 10 minutes.
將基底及其上的多孔結構水洗、乾燥後,在真空燒結爐中以攝氏溫度450度燒結。 The substrate and the porous structure thereon were washed with water and dried, and then sintered at 450 ° C in a vacuum sintering furnace.
實施例9 Example 9
以與實施例1相同的方法製備電解液,除了硫酸的濃度為每公升0.5莫耳(mol/L),硫酸銅的濃度為每公升0.1莫耳(mol/L)。 An electrolytic solution was prepared in the same manner as in Example 1, except that the concentration of sulfuric acid was 0.5 moles (mol / L) per liter, and the concentration of copper sulfate was 0.1 moles (mol / L) per liter.
以H70黃銅為基底,以與實施例1相同的方法預處理基底。 H70 brass was used as the substrate, and the substrate was pretreated in the same manner as in Example 1.
將處理後的基底在配製的溶液中採用逐漸增大電流密度的方式進行電沉積,以在基底上形成多孔結構,其中電沉積溫度為攝氏溫度20度,起始電流密度為每平方公分0.01安培(A/cm2),電流密度增速為每平方公分秒0.05安培(A/cm2.s),時間為10秒。 The treated substrate was electrodeposited in the prepared solution by gradually increasing the current density to form a porous structure on the substrate. The electrodeposition temperature was 20 degrees Celsius and the initial current density was 0.01 amps per square centimeter. (A / cm 2 ), the current density increase rate is 0.05 amps per square centimeter second (A / cm 2 · s), and the time is 10 seconds.
將基底及其上的多孔結構水洗、乾燥後,在真空燒結爐中以攝氏溫度450度燒結。 The substrate and the porous structure thereon were washed with water and dried, and then sintered at 450 ° C in a vacuum sintering furnace.
實施例10 Example 10
以與實施例1相同的方法製備電解液,除了硫酸的濃度為每公升0.5莫耳(mol/L),硫酸銅的濃度為每公升0.1莫耳(mol/L)。 An electrolytic solution was prepared in the same manner as in Example 1, except that the concentration of sulfuric acid was 0.5 moles (mol / L) per liter, and the concentration of copper sulfate was 0.1 moles (mol / L) per liter.
以H70黃銅為基底,以與實施例1相同的方法預處理基底。 H70 brass was used as the substrate, and the substrate was pretreated in the same manner as in Example 1.
將處理後的基底在配製的溶液中採用逐漸增大電流密度的方式進行電沉積,以在基底上形成多孔結構,其中電沉積溫度為攝氏溫度20度,起始電流密度為每平方公分0.1安培(A/cm2),電流密度增速為每平方公分秒0.001安培(A/cm2.s),時間為10分鐘。 The treated substrate was electrodeposited in the prepared solution by gradually increasing the current density to form a porous structure on the substrate. The electrodeposition temperature was 20 degrees Celsius and the initial current density was 0.1 amps per square centimeter. (A / cm 2 ), the current density increased at a rate of 0.001 amps per square centimeter per second (A / cm 2 .s), and the time was 10 minutes.
將基底及其上的多孔結構水洗、乾燥後,在真空燒結爐中以攝氏溫度450度燒結。 The substrate and the porous structure thereon were washed with water and dried, and then sintered at 450 ° C in a vacuum sintering furnace.
實施例11 Example 11
以與實施例1相同的方法製備電解液,除了硫酸的濃度為每公升0.5莫耳(mol/L),硫酸銅的濃度為每公升0.1莫耳(mol/L)。 An electrolytic solution was prepared in the same manner as in Example 1, except that the concentration of sulfuric acid was 0.5 moles (mol / L) per liter, and the concentration of copper sulfate was 0.1 moles (mol / L) per liter.
以H70黃銅為基底,以與實施例1相同的方法預處理基底。 H70 brass was used as the substrate, and the substrate was pretreated in the same manner as in Example 1.
將處理後的基底在配製的溶液中採用逐漸增大電流密度的方式進行電沉積,以在基底上形成多孔結構,其中電沉積溫度為攝氏溫度20度,起始電流密度為每平方公分0.2安培(A/cm2),電流密度增速為每平方公分秒0.005安培(A/cm2.s),時間為5分鐘。 The treated substrate was electrodeposited in the prepared solution by gradually increasing the current density to form a porous structure on the substrate. The electrodeposition temperature was 20 degrees Celsius and the initial current density was 0.2 amps per square centimeter. (A / cm 2 ), the current density increase rate is 0.005 amps per square centimeter second (A / cm 2 · s), and the time is 5 minutes.
將基底及其上的多孔結構水洗、乾燥後,在真空燒結爐中以攝氏溫度450度燒結。 The substrate and the porous structure thereon were washed with water and dried, and then sintered at 450 ° C in a vacuum sintering furnace.
圖1(a)是本發明實施例1製備的多孔吸液芯的掃描電子顯微鏡照片,從圖中可以看出,淺灰色部分為吸液芯主體結構;圖1(b)顯示的為元素鋅的分佈狀態,白色斑點代表元素的分佈及存在;圖1(c)是元素銅的分佈狀態,灰色斑點代表元素的分佈及存在;圖1(b)和圖1(c)說明該多孔吸液芯為銅鋅合金形式;圖1(d)是該結構的成分含量,可進一步證明銅鋅合金的存在。以上結果證明了經過燒結後基底中的鋅元素擴散到多孔結構中形成銅鋅合金。圖2(a)和圖2(b)分別是實施例1製備的多孔吸液芯表面不同放大倍率的掃描電子顯微鏡照片,圖2(a)可以看出吸液芯的多孔結構;圖2(b)看出表面出現棱柱結構,這證明燒結後基底中的鋅元素擴散導致。由於燒結過程中基底中的鋅元素擴散到多孔結構中形成了銅鋅合金,因此增加多孔結構的表面親水性,從而有利於工質在多孔結構中的傳輸,進而提高散熱效率。 Figure 1 (a) is a scanning electron microscope photograph of a porous wick prepared in Example 1 of the present invention. It can be seen from the figure that the light gray part is the main structure of the wick; Figure 1 (b) shows elemental zinc The distribution state of the element, the white spots represent the distribution and existence of the element; Figure 1 (c) is the distribution state of the element copper, and the gray spots represent the distribution and existence of the element; Figure 1 (b) and Figure 1 (c) illustrate the porous liquid absorption The core is in the form of a copper-zinc alloy; Figure 1 (d) is the composition content of the structure, which can further prove the existence of the copper-zinc alloy. The above results proved that the zinc element in the substrate diffused into the porous structure to form a copper-zinc alloy after sintering. Fig. 2 (a) and Fig. 2 (b) are scanning electron microscope photographs of different magnifications on the surface of the porous wick prepared in Example 1. Fig. 2 (a) shows the porous structure of the wick; Fig. 2 ( b) The prism structure is seen on the surface, which proves that the diffusion of zinc element in the substrate after sintering is caused. Since the zinc element in the substrate diffuses into the porous structure to form a copper-zinc alloy during the sintering process, the surface hydrophilicity of the porous structure is increased, which facilitates the transmission of the working fluid in the porous structure, thereby improving the heat dissipation efficiency.
對於本發明提供的其它實施例,所得產品結果與實施例1相同或相似,於此不再一一贅述。 For other embodiments provided by the present invention, the obtained product results are the same as or similar to those in Embodiment 1, and will not be described in detail here.
當然,本發明還可有其它多種實施例,在不背離本發明精神及其實質的情況下,本技術領域中具有通常知識者當可根據本發明作出各種相應的改變和變形,但這些相應的改變和變形都應屬於本發明所附的申請專利範圍的保護範圍。 Of course, the present invention may have other various embodiments. Without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and modifications according to the present invention, but these corresponding Changes and modifications should all fall within the protection scope of the patent application attached to the present invention.
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CN107868966A (en) | 2018-04-03 |
US20190145015A1 (en) | 2019-05-16 |
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