TWI635634B - Multi-layer dye-sensitized solar cell structure and manufacturing method thereof - Google Patents

Abstract

A multilayer dye-sensitized solar cell comprises a first substrate, a first electrode layer, a plurality of semiconductor thin film layers, a plurality of photosensitizing dye layers, an electrolyte layer, a second electrode layer and a second substrate. A method for manufacturing a multilayer dye-sensitized solar cell comprises: forming the first electrode layer on the first substrate; forming the plurality of semiconductor thin film layers on the first electrode layer; and adsorbing the plurality of photosensitizing dye layers And forming the second electrode layer on the second substrate; and disposing the electrolyte layer between the plurality of photosensitizing dye layers and the second electrode layer. Another embodiment includes: when the semiconductor film layer is immersed in a photosensitizing dye solution or separately immersed in a plurality of photosensitizing dye solutions, the plurality of semiconductor film layers are processed by an ultrasonic processing program to adsorb the photosensitizing dye On the plurality of semiconductor thin film layers.

Description

Multilayer dye-sensitized solar cell structure and manufacturing method thereof

The present invention relates to a multilayer dye-sensitized solar cell [DSSC] structure and a method of fabricating the same; and more particularly to a multilayer dye-sensitized solar cell for treating a photo-sensitizer or a photosensitizing dye by ultrasonic treatment Construction and manufacturing method thereof; in particular, relating to a composite dye sensitized solar cell structure and a method of manufacturing the same.

In general, a method for producing a dye-sensitized solar cell is disclosed, for example, in the method of producing a dye-sensitized solar cell of the Republic of China Patent Publication No. 200919742, and a method for producing a dye-sensitized solar cell. The method for manufacturing a dye-sensitized solar cell comprises: forming a semiconductor film layer on a first conductive substrate; surface-treating the semiconductor film layer; coating a photosensitive dye layer on the semiconductor film layer; and introducing an electrolyte layer to the photosensitive layer The dye layer is interposed between the second conductive substrate on the other side; and the second conductive substrate is encapsulated above the electrolyte layer.

In the above-mentioned No. 200919742, the step of surface-treating the semiconductor film layer before applying the photosensitive dye layer to the semiconductor film layer comprises: placing an aqua regia solution in an ultrasonic oscillator; soaking The first conductive substrate having the semiconductor film layer is applied to the ultrasonic oscillator; the ultrasonic oscillator is used to oscillate the aqueous solution; the first conductive substrate having the semiconductor film layer in the aqueous solution of the king is taken out; and the semiconductor is washed with the semiconductor The first conductive substrate of the film layer; and drying having the semiconductor The first conductive substrate of the body film layer.

In addition, the above-mentioned semiconductor film layer is also selected to be subjected to other surface treatments such as plasma surface treatment, ultraviolet surface treatment, and ultraviolet-ozone surface treatment. Furthermore, the above-mentioned No. 200919742 forms the photosensitizing dye layer using techniques including spin coating, screen printing, ink jetting, and immersion adsorption.

In fact, the aforementioned No. 200919742 simply coats or soaks the photosensitizing dye on the semiconductor film layer to form the photosensitizing dye layer. However, since the photosensitizing dye is not adsorbed by the immersion adsorption or uniform immersion on the semiconductor film layer by immersing the photosensitizing dye in the semiconductor film layer, the immersion time is too long. And the shortcomings of slow process time.

In general, in addition to the conventional method of the conventional 24 hour immersion method, the adsorption method of the photosensitizing dye may be carried out by increasing the dye concentration or increasing the working temperature to increase the dye diffusion flux and accelerate the dye adsorption, or in a closed space. Pressurizing and increasing the operating temperature mode accelerates the dye soaking adsorption, or the high speed rotating disk causes the dye droplets to impinge on the titanium dioxide film at a high speed to accelerate the dye adsorption, but it is not intended to limit the scope of the present invention.

Obviously, in order to shorten the process time and improve the soaking adsorption quality of the photosensitizing dye, it is also inevitable that there is a potential need to provide other methods for accelerating soaking adsorption or uniform soaking of the photosensitizing dye onto the multilayer semiconductor film layer. The above-mentioned patent application of the Japanese Patent Publication No. 200919742 is only a reference to the technical background of the present invention and the state of the art is not limited to the scope of the present invention.

In view of the above, the present invention provides a multilayer dye-sensitized solar cell structure and a method of fabricating the same, which form a plurality of semiconductor thin film layers on a working electrode, and immerse the plurality of semiconductor thin film layers in When using a photosensitive solution, use several ultrasonic treatments The program processes the plurality of semiconductor thin film layers to accelerate and uniformly adsorb the photosensitizing dye on the plurality of semiconductor thin film layers, so as to improve the technical disadvantage that the conventional dye-sensitized solar cell manufacturing method can only slowly adsorb the dye to the semiconductor film layer. .

The main object of the preferred embodiment of the present invention is to provide a multilayer dye-sensitized solar cell structure and a manufacturing method thereof, which form a plurality of semiconductor thin film layers on a working electrode, and immerse the plurality of semiconductor thin film layers in a photosensitive When the dye solution is dyed, the photosensitizing dye is accelerated and uniformly adsorbed on the plurality of semiconductor thin film layers to form a plurality of photosensitizing dye layers for the purpose of forming a multilayer photosensitive dye layer.

Another object of the preferred embodiment of the present invention is to provide a multilayer dye-sensitized solar cell structure and a method of fabricating the same, which comprises forming a plurality of semiconductor thin film layers on a working electrode, and immersing the plurality of semiconductor thin film layers in one When the dye solution is photosensitive, the plurality of semiconductor film layers are processed by using several ultrasonic processing programs, so that the photosensitizing dye is accelerated and uniformly adsorbed on the plurality of semiconductor film layers, thereby shortening the process time and improving the photosensitizing dye soaking. The purpose of adsorption quality.

In order to achieve the above object, a multilayer dye-sensitized solar cell structure according to a preferred embodiment of the present invention comprises: a first substrate; a second substrate corresponding to the first substrate; and a first electrode layer disposed on the first substrate a first electrode layer is formed on a substrate; a plurality of semiconductor film layers are formed on the first electrode layer; and a plurality of photosensitizing dye layers are adsorbed and formed on the plurality of semiconductor film layers; a second electrode layer disposed on the second substrate, and the The second electrode layer forms a pair of electrodes; and an electrolyte layer disposed between the plurality of photosensitizing dye layers and the second electrode layer; wherein the plurality of semiconductor film layers are immersed in a photosensitizing dye solution or separately soaked The photosensitizing dye is adsorbed on the plurality of semiconductor thin film layers to form the plurality of photosensitizing dye layers to enhance the photoelectric conversion efficiency of a dye-sensitized solar cell.

In a preferred embodiment of the invention, the plurality of semiconductor thin film layers are processed by at least one or more ultrasonic processing procedures, and the photosensitizing dye is adsorbed on the plurality of semiconductor thin film layers to form the plurality of photosensitizing dye layers.

In the preferred embodiment of the present invention, the plurality of semiconductor thin film layers comprise an outer semiconducting particle layer and an inner semiconducting particle layer to form a composite bilayer semiconductor layer, and the inner semiconducting particle layer is opposite to the outer semiconducting particle layer. The inner side of the semiconductor particle layer has a first particle gap, and the inner layer of semiconductor particles has a second particle gap, and the width of the first particle gap is greater than the width of the second particle gap.

In the preferred embodiment of the present invention, the plurality of semiconductor thin film layers comprise an outer semi-semiconductor particle layer, a middle semi-semiconductor particle layer and an inner semi-semiconductor particle layer to form a composite three-layer semiconductor layer by externally and sequentially arranged. The outer semiconducting particle layer has a first interparticle gap, and the middle semiconducting particle layer has a second interparticle gap, and the inner semiconducting particle layer has a third interparticle gap, and the first interparticle gap has a width greater than the first The width of the two particle gaps, and the width of the second particle gap is greater than the width of the third particle gap.

In the preferred embodiment of the present invention, the plurality of semiconductor thin film layers comprise an outer semi-semiconductor particle layer, a middle semi-semiconductor particle layer and an inner semi-semiconductor particle layer to form a composite three-layer semiconductor layer by externally and sequentially arranged. The outer semiconducting particle layer has a first particle gap, and the middle semiconductor particle layer has a second particle gap, and the inner layer is semiconductive The bulk particle layer has a third particle gap, and the width of the second particle gap is greater than a width of the first particle gap and a width of the third particle gap, and a width of the first particle gap is greater than a width of the third particle gap .

In the preferred embodiment of the invention, the plurality of photosensitizing dye layers comprise a first photosensitive dye layer and a second photosensitizing dye layer to form a composite double-layer photosensitive dye layer.

In a preferred embodiment of the invention, the first photosensitizing dye layer comprises a first photosensitizing dye, and the second photosensitizing dye layer comprises a second photosensitizing dye, and the first photosensitizing dye and the second photosensitizing dye The dyes are not the same.

In the preferred embodiment of the invention, the plurality of photosensitizing dye layers comprise a first photosensitive dye layer, a second photosensitizing dye layer and a third photosensitizing dye layer to form a composite three-layer photosensitizing dye layer.

In a preferred embodiment of the present invention, the first photosensitive dye layer comprises a first photosensitizing dye, and the second photosensitizing dye layer comprises a second photosensitizing dye, and the third photosensitizing dye layer comprises a third A photosensitizing dye, and the first photosensitizing dye, the second photosensitizing dye are different from the third photosensitizing dye.

In a preferred embodiment of the present invention, after the plurality of semiconductor thin film layers are processed by ultrasonic waves, the plurality of photosensitizing dye layers form a composite uniform photosensitizing dye layer.

The photosensitizing dye of the photosensitizing dye layer of the preferred embodiment of the invention is copper chlorophyll sodium.

In order to achieve the above object, a method for fabricating a multilayer dye-sensitized solar cell according to a preferred embodiment of the present invention comprises: Preparing a first substrate, forming a first electrode layer on the first substrate, and forming a working electrode on the first electrode layer; forming a plurality of semiconductor thin film layers on the first electrode layer; The dye layer is adsorbed on the plurality of semiconductors On the bulk film layer, and immersing the plurality of semiconductor film layers in a photosensitizing dye solution or immersing them in a plurality of photosensitizing dye solutions, respectively, so that the photosensitizing dye is adsorbed on the plurality of semiconductor film layers to form the plurality of a photosensitive dye layer; a second substrate is formed, a second electrode layer is formed on the second substrate, and the second electrode layer forms a pair of electrodes; and an electrolyte layer is disposed on the plurality of photosensitizing dye layers And between the second electrode layers.

In a preferred embodiment of the invention, the plurality of semiconductor thin film layers are processed by at least one or more ultrasonic processing procedures, and the photosensitizing dye is adsorbed on the plurality of semiconductor thin film layers to form the plurality of photosensitizing dye layers.

In the preferred embodiment of the present invention, the ultrasonic wave is converted into a high-frequency mechanical shock wave, so that a photosensitive dye solution generates a plurality of high-pressure microbubbles, and the high-voltage microbubbles are used to impact the plurality of semiconductor thin film layers to make the dye solution The dye molecules are rapidly attached to the plurality of semiconductor thin film layers as the high pressure microbubbles are guided to form uniform layers of the photosensitizing dye.

In the preferred embodiment of the present invention, the plurality of semiconductor thin film layers comprise an outer semiconducting particle layer and an inner semiconducting particle layer to form a composite bilayer semiconductor layer, and the inner semiconducting particle layer is opposite to the outer semiconducting particle layer. The inner side of the semiconductor particle layer has a first particle gap, and the inner layer of semiconductor particles has a second particle gap, and the width of the first particle gap is greater than the width of the second particle gap.

In the preferred embodiment of the present invention, the plurality of semiconductor thin film layers comprise an outer semi-semiconductor particle layer, a middle semi-semiconductor particle layer and an inner semi-semiconductor particle layer to form a composite three-layer semiconductor layer by externally and sequentially arranged. The outer semiconducting particle layer has a first interparticle gap, and the intermediate semiconductor particle layer has a second interparticle gap, and the inner semiconducting particle layer has a third interparticle gap, and the width of the first interparticle gap Greater than the width of the second particle gap, and the width of the second particle gap is greater than the width of the third particle gap.

In the preferred embodiment of the present invention, the plurality of semiconductor thin film layers comprise an outer semi-semiconductor particle layer, a middle semi-semiconductor particle layer and an inner semi-semiconductor particle layer to form a composite three-layer semiconductor layer by externally and sequentially arranged. The outer semiconducting particle layer has a first interparticle gap, and the middle semiconducting particle layer has a second interparticle gap, and the inner semiconducting particle layer has a third interparticle gap, and the second interparticle gap has a width greater than the first a width of the particle gap and a width of the third particle gap, and the width of the first particle gap is greater than the width of the third particle gap.

In the preferred embodiment of the invention, the plurality of photosensitizing dye layers comprise a first photosensitive dye layer and a second photosensitizing dye layer to form a double layer photosensitive dye layer.

In a preferred embodiment of the invention, the first photosensitizing dye layer comprises a first photosensitizing dye, and the second photosensitizing dye layer comprises a second photosensitizing dye, and the first photosensitizing dye and the second photosensitizing dye The dyes are not the same.

In the preferred embodiment of the invention, the plurality of photosensitizing dye layers comprise a first photosensitive dye layer, a second photosensitizing dye layer and a third photosensitizing dye layer to form a three-layer photosensitive dye layer.

In a preferred embodiment of the present invention, the first photosensitive dye layer comprises a first photosensitizing dye, and the second photosensitizing dye layer comprises a second photosensitizing dye, and the third photosensitizing dye layer comprises a third A photosensitizing dye, and the first photosensitizing dye, the second photosensitizing dye are different from the third photosensitizing dye.

In the preferred embodiment of the invention, the photosensitizing dye solution is formed by uniformly mixing copper chlorophyll sodium and an aqueous solution.

The concentration of the copper chlorophyll sodium in the preferred embodiment of the invention is 0.004M.

In the preferred embodiment of the invention, the semiconductor film layer and the plurality of photosensitizing dye layers have a large working area.

1‧‧‧Multilayer dye-sensitized solar cells

10a‧‧‧First substrate

10b‧‧‧second substrate

20a‧‧‧First electrode layer

20b‧‧‧Second electrode layer

30‧‧‧Semiconductor film layer

30A‧‧‧Semiconductor film layer

30B‧‧‧Semiconductor film layer

301‧‧‧First semiconductor particles

302‧‧‧Second semiconductor particles

303‧‧‧ Third semiconductor particles

40‧‧‧Photosensitive dye layer

50‧‧‧ electrolyte layer

Fig. 1 is a schematic view showing the construction of a multilayer dye-sensitized solar cell according to a preferred embodiment of the present invention.

Fig. 2 is a schematic view showing the use of a multilayer photosensitive dye layer in the multilayer dye-sensitized solar cell of the first preferred embodiment of the present invention.

Fig. 3 is a schematic view showing the use of a multilayer photosensitive dye layer in the multilayer dye-sensitized solar cell of the second preferred embodiment of the present invention.

Fig. 4 is a schematic view showing the use of a multi-layer photosensitive dye layer in the multilayer dye-sensitized solar cell of the third preferred embodiment of the present invention.

Fig. 5 is a schematic view showing the ultrasonic processing of a multilayer dye-sensitized solar cell according to a fourth preferred embodiment of the present invention using a multi-layer photosensitive dye layer.

In order to fully understand the present invention, the preferred embodiments of the present invention are described in detail below, and are not intended to limit the invention.

First, the multilayer dye-sensitized solar cell structure and the manufacturing method thereof according to the preferred embodiment of the present invention are applicable to various dye-sensitized solar cell devices; further, the multilayer dye-sensitized solar cell structure of the preferred embodiment of the present invention The production method can appropriately select various photosensitizing dyes, but it is not intended to limit the scope of application of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view showing the construction of a multilayer dye-sensitized solar cell according to a preferred embodiment of the present invention, the construction of which comprises a multilayer structure layer, but it is not intended to limit the scope of the invention. Referring to FIG. 1 , for example, the multilayer dye-sensitized solar cell 1 of the preferred embodiment of the present invention comprises a first substrate 10a, a first electrode layer 20a, and a number. Semiconductor thin film layer a membrane layer 30, a plurality of dye-dysitized layer 40, an electrolyte layer 50, a second electrode layer 20b, and a second substrate 10b, which can be appropriately combined with the multilayer dye Sensitized solar cell 1.

Referring to FIG. 1 again, for example, the first substrate 10a may be selected from various transparent or semi-transparent plate bodies, such as a glass substrate, a plastic substrate or the like; Similarly, the second substrate 10b can be selected from various transparent or translucent sheet bodies, such as a glass substrate, a plastic substrate, or the like. When assembled, the first substrate 10a and the second substrate 10b are disposed in a corresponding manner on both sides of the multilayer dye-sensitized solar cell 1 or other suitable arrangement positions.

Referring to FIG. 1 again, for example, the first electrode layer 20a is disposed on the first substrate 10a, and the first electrode layer 20a is used as a working electrode, and the first electrode layer 20a It may be selected from various suitable metal materials (for example, gold, silver, copper, aluminum or platinum) or various metal oxide materials (for example, indium tin oxide (ITO) or transparent oxidized metal materials) or any combination of various metal layers.

Referring to FIG. 1 again, for example, a method for fabricating a multilayer dye-sensitized solar cell according to a preferred embodiment of the present invention includes: preparing the first substrate 10a, and forming the first electrode layer on the first substrate 10a. 20a, and the first electrode layer 20a forms a working electrode.

Fig. 2 is a view showing a multilayer dye-sensitized solar cell of the first preferred embodiment of the present invention using a multilayer photosensitive dye layer. Referring to FIGS. 1 and 2, a method of fabricating a multilayer dye-sensitized solar cell according to a preferred embodiment of the present invention includes forming the plurality of semiconductor thin film layers 30 on the first electrode layer 20a in a plurality of molding manners. For example, the plurality of semiconductor thin film layers 30 may select various coating methods, including physical vapor deposition (eg, evaporation or sputtering) or chemical vapor deposition, or alternatively, various coating methods may be selected. It comprises, for example, a screen printing method, a spin coating method or an ink jet method to form a multilayer porous nano film such as a TiO ₂ semiconductor film.

Referring to FIG. 2, for example, the plurality of semiconductor thin film layers 30 include an outer layer of semiconductor particles (the right side of FIG. 2) and an inner layer of semiconductor particles (the left side of the second figure) to form a A composite bilayer semiconductor layer is disposed, and the inner semiconducting particle layer is opposite to the inner side of the outer semiconducting particle layer. The outer semiconducting particle layer has a plurality of first semiconductor particles [large particles] 301, and the inner semiconducting particle layer has a plurality of second semiconductor particles [small particles] 302. The first semiconductor particles 301 of the outer semiconductor particle layer have a first particle gap [large gap], and the second semiconductor particles 302 of the inner semiconductor particle layer have a second particle gap (small gap). And the width of the first particle gap is greater than the width of the second particle gap.

Referring to FIG. 2 again, since the width of the first particle gap [large gap] is larger than the width of the second particle gap [small gap], it is advantageous for the photosensitizing dye to pass through the first particle gap [large gap] The inner semiconducting particle layer is reached and can enter the second interparticle gap (small gap) to be adsorbed on the plurality of second semiconductor particles [small particles] 302 of the inner semiconducting particle layer.

Referring to FIGS. 1 and 2 again, for example, the plurality of semiconductor thin film layers 30 may be selected from various suitable inorganic semiconductor materials, including various metal oxides or composite metal oxides (eg, titanium dioxide [TiO ₂ ] Zinc oxide [ZnO], cadmium oxide [CdO], tin dioxide [SnO ₂ ] or any combination thereof].

Fig. 3 is a view showing a multilayer dye-sensitized solar cell according to a second preferred embodiment of the present invention, which is a schematic view of a multi-layer photosensitive dye layer, which corresponds to Fig. 2. Referring to FIG. 3, the plurality of semiconductor thin film layers 30A of the second preferred embodiment of the present invention comprise an outer layer with respect to the first embodiment. The semiconductor particle layer, the intermediate semiconductor particle layer and the inner semiconductor particle layer form a composite three-layer photosensitizing dye layer in an outwardly and inwardly arranged manner. The outer semiconducting particle layer has a plurality of first semiconductor particles [large particles] 301, and the intermediate semiconductor particle layer has a plurality of second semiconductor particles [middle particles] 302, and the inner semiconducting particle layer has a plurality of third semiconductors Granules [small particles] 303.

Referring to FIG. 3 again, the first semiconductor particles 301 of the outer semiconducting semiconductor layer have a first interparticle gap [large gap], and the second semiconductor particles 302 of the intermediate semiconductor particle layer have a first a second particle gap [middle gap], and a third particle gap [small gap] between the third semiconductor particles 303 of the inner semiconductor particle layer, and the width of the first particle gap is greater than the width of the second particle gap And the width of the second particle gap is greater than the width of the third particle gap.

Referring to FIG. 3 again, since the width of the first particle gap [large gap] is greater than the width of the second particle gap [middle gap], and the width of the second particle gap [middle gap] is greater than the third The width of the particle gap [small gap] is therefore advantageous for the photosensitizing dye to reach the inner layer of semiconductor particles via the first particle gap [large gap] and the second particle gap [middle gap], and can enter the third particle gap [Small gap] is adsorbed on a plurality of third semiconductor particles [small particles] 303 of the inner layer of semiconductor particles.

Fig. 4 is a view showing a multilayer dye-sensitized solar cell according to a third preferred embodiment of the present invention, which is a schematic view of a multi-layer photosensitive dye layer, which corresponds to Fig. 3. Referring to FIG. 4, the plurality of semiconductor thin film layers 30B of the third preferred embodiment of the present invention comprise an outer semiconducting film layer, a middle semiconducting semiconductor layer and an inner semiconducting particle layer. A single composite layer photosensitizing dye layer or a plurality of composite layer photosensitizing dye layers are formed by sequential arrangement from the outside to the inside. The outer semiconducting particle layer has a plurality of first semiconductor particles [medium particles] 301, and the middle semiconductor chip The grain layer has a plurality of second semiconductor particles [large particles] 302, and the inner layer of semiconductor particles has a plurality of third semiconductor particles [small particles] 303.

Referring to FIG. 4 again, the first semiconductor particles 301 of the outer semi-semiconductor particle layer have a first interparticle gap (intermediate gap), and the second semiconductor particles 302 of the intermediate semiconductor particle layer have a first a second particle gap [large gap], and a third particle gap [small gap] between the third semiconductor particles 303 of the inner semiconductor particle layer, and the width of the second particle gap is greater than the width of the first particle gap And a width of the third particle gap, and a width of the first particle gap is greater than a width of the third particle gap.

Referring to FIG. 4 again, since the width of the first particle gap [middle gap] and the width of the second particle gap [large gap] are larger than the width of the third particle gap [small gap], it is advantageous for photosensitization. The dye reaches the inner semiconducting particle layer via the first interparticle gap [intermediate gap] and the second interparticle gap [large gap], and may enter the third interparticle gap [small gap] and be adsorbed to the inner semiconducting particle layer A plurality of third semiconductor particles [small particles] 303. In addition, since the width of the first particle gap [middle gap] is smaller than the width of the second particle gap [large gap], the photosensitizing dye can be prevented from flowing out to the second particle gap [large gap] during the manufacturing process. The plurality of semiconductor thin film layers 30B are outside.

Fig. 5 is a view showing a multilayer dye-sensitized solar cell according to a fourth preferred embodiment of the present invention, which is a schematic view of a multi-layer photosensitive dye layer, which corresponds to Fig. 4. Referring to FIG. 5, with respect to the third embodiment, the fourth preferred embodiment of the present invention processes the plurality of semiconductor thin film layers 30B by using at least one or several ultrasonic processing programs (as shown in FIG. 4). The photosensitizing dye is continuously passed through the first particle gap [intermediate gap] and the second particle gap [large gap], and the photosensitizing dye is adsorbed on the plurality of semiconductor thin film layers 30B and the inner semiconducting particle layer to accelerate formation The plurality of photosensitizing dye layers 40.

Referring again to FIGS. 1 and 2, another preferred embodiment of the present invention processes the plurality of semiconductor thin film layers 30 (as shown in FIG. 2) using at least one or several ultrasonic processing programs to cause photosensitizing dyes. Through the first particle gap, the photosensitizing dye is adsorbed on the plurality of semiconductor thin film layers 30 and the inner semiconducting particle layer to accelerate the formation of the plurality of photosensitizing dye layers 40.

Referring to FIGS. 1 and 3 again, another preferred embodiment of the present invention processes the plurality of semiconductor thin film layers 30A (as shown in FIG. 3) using at least one or several ultrasonic processing programs to cause photosensitizing dyes. The first particle gap and the second particle gap are continuously passed, and the photosensitizing dye is adsorbed on the plurality of semiconductor thin film layers 30A and the inner semiconductor particle layer to accelerate formation of the plurality of photosensitizing dye layers 40.

Referring to Figures 1, 2, 3, 4 and 5, the method for fabricating a multilayer dye-sensitized solar cell according to a preferred embodiment of the present invention comprises: adsorbing the plurality of photosensitizing dye layers 40 on the plurality of semiconductors. Processing the plurality of semiconductor film layers 30, 30A, 30B for one or more predetermined times on the film layers 30, 30A, 30B and using a plurality of ultrasonic processing procedures (continuous or discontinuous processing procedures) in a photosensitizing dye solution [Ultrasonic processing time of 10 minutes, 15 minutes, 20 minutes, 25 minutes, and 30 minutes, respectively, so that the photosensitizing dye is adsorbed on the plurality of semiconductor thin film layers 30 to accelerate the formation of a uniform or uniform quality of a uniform uniform photosensitive Dyestuff layer. If the ultrasonic processing power is too large or the processing time is too long, it is easy to break or wash the plurality of semiconductor thin film layers 30, 30A, 30B or the photosensitizing dye layer 40.

Referring again to Figures 1 and 2, for example, the plurality of photosensitizing dye layers 40 comprise a first photosensitive dye layer and a second photosensitizing dye layer to form a composite double-layer photosensitive dye layer. . In addition, the first photosensitizing dye layer comprises a first photosensitizing dye, and the second photosensitizing dye layer comprises a second photosensitizing dye, and the first photosensitizing dye and the first The two photosensitizing dyes can be selected to be different.

Referring again to Figures 1, 2, 3, 4 and 5, for example, the plurality of photosensitizing dye layers comprise a first photosensitizing dye layer, a second photosensitizing dye layer and a third photosensitizing layer. The dye layer is formed to form a composite three-layer photosensitive dye layer. In addition, the first photosensitizing dye layer comprises a first photosensitizing dye, and the second photosensitizing dye layer comprises a second photosensitizing dye, and the third photosensitizing dye layer comprises a third photosensitizing dye, and The first photosensitizing dye, the second photosensitizing dye and the third photosensitizing dye may be selected to be different.

Referring again to FIGS. 1 and 2, for example, the photosensitizing dye solution is formed by uniformly mixing copper chlorophyll sodium and an aqueous solution having a predetermined concentration (for example, 0.004 M). In another preferred embodiment of the present invention, the photosensitizing dye solution is a mixed cocktail photosensitive photosensitizing dye solution. The ultrasonic wave is converted into a high-frequency mechanical shock wave, and the photosensitive dye solution is caused to generate a plurality of high-pressure microbubbles, and the high-pressure microbubbles are suitable for carrying any area of the plurality of semiconductor thin film layers 30, such as a large area. . As such, the plurality of semiconductor thin film layers 30 and the plurality of photosensitizing dye layers 40 have a large working area.

Referring again to Figures 1 and 2, for example, the hybrid composite photosensitizing dye solution comprises N719 and SQ2 organic photosensitizing dyes having a predetermined solution volume ratio (e.g., about 10:0, about 8: 2. About 6:4, about 4:6, about 2:8, and about 0:10. In addition, since the price of N719 is higher than SQ2, the method for preparing the mixed composite photosensitizing dye solution can also reduce the manufacturing cost of the dye layer. For example, when the predetermined solution volume ratio is 6:4 and the super-boeing treatment time is 20 minutes, the dye-sensitized solar cell produced by the dye-sensitized solar cell can obtain the best conversion efficiency, and the conversion efficiency value is 4.65%. .

Table 1: Experimental measurement results of a dye-sensitized solar cell using a hybrid composite dye according to a preferred embodiment of the present invention

In another preferred embodiment of the invention, the photosensitizing dye solution is a stepwise complex photosensitizing dye solution. Another preferred embodiment of the present invention comprises: a first step of fabricating a N719 dye layer on a semiconductor layer of a working electrode, which is ultrasonically treated for 20 minutes to form a N719 dye layer; and a second step in the N719 dye An SQ2 dye layer was formed on the layer, and ultrasonic processing was used in the process (the processing time was set to 5, 10, and 15 minutes, respectively). When the ultrasonic treatment time required for the SQ2 dye layer preparation is 5 minutes and ethanol is the solvent, the dye-sensitized solar cell produced can obtain the best conversion efficiency, and the conversion efficiency value is 4.32%.

Referring again to Figures 1 and 2, for example, the plurality of photosensitizing dye layers 40 are formed by adsorption of various suitable photosensitizing dyes. The photosensitizing dyes of the plurality of photosensitizing dye layers 40 are hybrid composite dyes, stepwise complex dyes or other similar materials (for example, copper chlorophyll sodium). After the dye molecules of the plurality of photosensitizing dye layers 40 absorb light energy, electrons on the dye molecules jump from a ground state to an excited state; due to the dye molecules and inorganic semiconductors of the plurality of semiconductor thin film layers 30 (for example, TiO _{2 )} ] combined with each other by chemical bonds. Then, after the excited state electrons of the dye molecule are rapidly injected into the conduction band adjacent to the plurality of semiconductor thin film layers 30, the photosensitizing dye cations of the plurality of semiconductor thin film layers 30 are formed. After the conduction band of the plurality of semiconductor thin film layers 30 is transferred to the first electrode layer 20a, the dye-sensitized solar cell 1 can output a current.

Referring to FIGS. 1 and 2 again, for example, the second electrode layer 20b is disposed on the second substrate 10b with respect to the first substrate 10a, and the second electrode layer 20b serves as a counter electrode. The second electrode layer 20b may be selected from various suitable metal materials (for example, gold, silver, copper, aluminum or platinum) or various metal oxide materials (for example, indium tin oxide or transparent oxidized metal) or Any combination of various metal layers.

Referring to FIGS. 1 and 2, a method for fabricating a multilayer dye-sensitized solar cell according to a preferred embodiment of the present invention includes: preparing the second substrate 10b, and forming the second electrode layer 20b on the second substrate 10b. And the second electrode layer 20b forms at least one pair of electrodes as shown in the right position of FIG.

Referring to FIGS. 1 and 2, a method for fabricating a multilayer dye-sensitized solar cell according to a preferred embodiment of the present invention includes disposing the electrolyte layer 50 on the plurality of photosensitizing dye layers 40 and second electrode layers 20b. In order to provide an electrolyte between the plurality of photosensitizing dye layers 40 and the second electrode layer 20b. The electrolyte layer 50 is selected from a liquid electrolyte or a solid electrolyte according to various needs.

Referring again to FIG. 1, for example, the electrolyte of the electrolyte layer 50 serves as a hole-transport material (HTM). The photosensitizing dye cations of the plurality of photosensitizing dye layers 40 can obtain electrons from the redox reaction of the electrolyte layer 50, and thus the dye is divided into The sub-returns back to the ground state. At the same time, the electrolyte layer 50 is catalyzed by a catalytic material (for example, platinum) on the surface of the counter electrode of the second electrode layer 20b which obtains electrons, so that the electrolyte layer 50 undergoes a reduction reaction.

The above experimental data is preliminary experimental results obtained under specific conditions, which are only used to easily understand or refer to the technical content of the present invention, and other related experiments are still required. The experimental data and its results are not intended to limit the scope of the invention.

The foregoing preferred embodiments are merely illustrative of the invention and the technical features thereof, and the techniques of the embodiments can be carried out with various substantial equivalent modifications and/or alternatives; therefore, the scope of the invention is subject to the appended claims. The scope defined by the scope shall prevail. The copyright limitation of this case is used for the purpose of patent application in the Republic of China.

Claims (10)

A multilayer dye-sensitized solar cell structure comprising: a first substrate; a second substrate corresponding to the first substrate; a first electrode layer disposed on the first substrate, and the first electrode Forming a working electrode; a plurality of semiconductor thin film layers formed on the first electrode layer, wherein the plurality of semiconductor thin film layers comprise a plurality of semiconductor particle layers, and each of the plurality of semiconductor particle layers has a different semiconductor particle diameter, In order to form a width of different gaps between the plurality of semiconductor particles; a plurality of photosensitizing dye layers are formed on the plurality of semiconductor thin film layers; a second electrode layer is disposed on the second substrate, and the The second electrode layer forms a pair of electrodes; and an electrolyte layer disposed between the photosensitizing dye layer and the second electrode layer; wherein the plurality of semiconductor film layers are immersed in a photosensitizing dye solution or separately immersed in the number The photosensitizing dye solution adsorbs the photosensitizing dye on the plurality of semiconductor thin film layers to form the plurality of photosensitizing dye layers to improve photoelectric conversion efficiency. The multilayer dye-sensitized solar cell structure of claim 1, wherein the plurality of semiconductor thin film layers comprise an outer semiconducting particle layer and an inner semiconducting particle layer to form a composite bilayer semiconductor layer, and The inner semiconducting particle layer is opposite to the inner side of the outer semiconducting particle layer, and the outer semiconducting particle layer has a first interparticle gap, and the inner semiconducting particle layer has a width of a second interparticle gap, and the first interparticle gap Greater than the width of the second particle gap. The multilayer dye-sensitized solar cell structure of claim 1, wherein the plurality of semiconductor thin film layers comprise an outer semiconducting particle layer, a middle semiconducting particle layer and an inner semiconducting particle layer. Forming a composite three-layer semiconductor layer in an in-sequential arrangement, wherein the outer semi-semiconductor particle layer has a first interparticle gap, and the intermediate semiconductor particle layer has a second interparticle gap, and the inner semiconducting particle layer has a first a three-particle gap, wherein a width of the first particle gap is greater than a width of the second particle gap, and a width of the second particle gap is greater than a width of the third particle gap; or, a width of the second particle gap is greater than the first a width of the particle gap and a width of the third particle gap, and the width of the first particle gap is greater than the width of the third particle gap. The multi-layer dye-sensitized solar cell structure according to claim 1, wherein the plurality of photosensitizing dye layers comprise a first photosensitizing dye layer and a second photosensitizing dye layer to form a composite double-layer photosensitive layer. a dye layer, wherein the first photosensitizing dye layer comprises a first photosensitizing dye, and the second photosensitizing dye layer comprises a second photosensitizing dye, and the first photosensitizing dye and the second photosensitizing dye are not the same. The multi-layer dye-sensitized solar cell structure according to claim 1, wherein the plurality of photosensitizing dye layers comprise a first photosensitizing dye layer, a second photosensitizing dye layer and a third photosensitizing dye layer. Forming a composite three-layer photosensitizing dye layer, wherein the first photosensitizing dye layer comprises a first photosensitizing dye, and the second photosensitizing dye layer comprises a second photosensitizing dye, and the third photosensitizing dye The dye layer comprises a third photosensitizing dye, and the first photosensitizing dye, the second photosensitizing dye are different from the third photosensitizing dye. A method for manufacturing a multilayer dye-sensitized solar cell, comprising: preparing a first substrate, forming a first electrode layer on the first substrate, and forming a working electrode on the first electrode layer; and forming a plurality of semiconductor thin film layers Formed on the first electrode layer, and the plurality of semiconductor thin film layers comprise a plurality of semiconductor particle layers, and each of the plurality of semiconductor particle layers has different semiconductor particle diameters to form different gap widths between the plurality of semiconductor particles Adsorbing a plurality of photosensitizing dye layers on the plurality of semiconductor thin film layers And immersing the plurality of semiconductor film layers in a photosensitizing dye solution or immersing them in a plurality of photosensitizing dye solutions, respectively, so that the photosensitizing dye is adsorbed on the plurality of semiconductor film layers to form the plurality of photosensitizing dyes a second substrate is formed on the second substrate, and the second electrode layer forms a pair of electrodes; and an electrolyte layer is disposed on the plurality of photosensitizing dye layers and the second layer Between the electrode layers. The method for fabricating a multilayer dye-sensitized solar cell according to claim 6, wherein the plurality of semiconductor thin film layers comprise an outer semiconducting particle layer and an inner semiconducting particle layer to form a composite bilayer semiconductor layer, and The inner semiconducting particle layer is opposite to the inner side of the outer semiconducting particle layer, and the outer semiconducting particle layer has a first interparticle gap, and the inner semiconducting particle layer has a second interparticle gap, and the first interparticle gap The width is greater than the width of the second particle gap. The method for fabricating a multilayer dye-sensitized solar cell according to claim 6, wherein the plurality of semiconductor thin film layers comprise an outer semiconducting particle layer, a middle semiconducting particle layer and an inner semiconducting particle layer to be externally Forming a composite three-layer semiconductor layer in a sequential arrangement, wherein the outer semi-semiconductor particle layer has a first interparticle gap, and the intermediate semiconductor particle layer has a second interparticle gap, and the inner semiconducting particle layer has a third particle a gap, and a width of the first particle gap is greater than a width of the second particle gap, and a width of the second particle gap is greater than a width of the third particle gap; or, a width of the second particle gap is greater than the first particle The width of the gap and the width of the third particle gap, and the width of the first particle gap is greater than the width of the third particle gap. The method for manufacturing a multilayer dye-sensitized solar cell according to claim 6, wherein the plurality of photosensitizing dye layers comprise a first photosensitizing dye layer and a second photosensitizing dye layer to form a composite double layer. Photosensitive dye layer, wherein the first photosensitizing dye layer comprises a first photosensitizing dye, and the second photosensitizing dye layer comprises a second photosensitizing dye, and the first The photosensitizing dye is not the same as the second photosensitizing dye. The method for manufacturing a multilayer dye-sensitized solar cell according to claim 6, wherein the plurality of photosensitizing dye layers comprise a first photosensitizing dye layer, a second photosensitizing dye layer and a third photosensitizing dye. a layer to form a composite three-layer photosensitive dye layer, wherein the first photosensitizing dye layer comprises a first photosensitizing dye, and the second photosensitizing dye layer comprises a second photosensitizing dye, and the third photosensitive The dye layer comprises a third photosensitizing dye, and the first photosensitizing dye, the second photosensitizing dye are different from the third photosensitizing dye.