TWI632260B - High-stability quantum dots doped fiber and anti-counterfeit fabric having the same - Google Patents

High-stability quantum dots doped fiber and anti-counterfeit fabric having the same Download PDF

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TWI632260B
TWI632260B TW106109879A TW106109879A TWI632260B TW I632260 B TWI632260 B TW I632260B TW 106109879 A TW106109879 A TW 106109879A TW 106109879 A TW106109879 A TW 106109879A TW I632260 B TWI632260 B TW I632260B
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quantum dot
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fabric
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TW201835397A (en
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陳學仕
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清颺科技有限公司
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Abstract

不同於習知的量子點纖維顯示出穩定度與發光效率不佳的問題,本發明提出一種高穩定性的量子點纖維,主要係由複數個量子點、一聚合物鞘、以及一鞘保護膜所構成。特別地,聚合物鞘係以具有高玻璃轉換溫度的酯類聚合物製成,且鞘保護膜係以具有低玻璃轉換溫度的丙烯酸聚合物製成。其中,低玻璃轉換溫度的丙烯酸聚合物有助於提升量子點纖維的柔軟度及耐腐蝕性,進而可以有效避免聚合物鞘於貯存或加工過程中產生泛黃現象,達到避免水氧通過人造纖維聚合物而侵蝕量子點之目的。Different from the conventional quantum dot fiber, which shows the problem of poor stability and luminous efficiency, the present invention provides a high stability quantum dot fiber mainly composed of a plurality of quantum dots, a polymer sheath, and a sheath protective film. Composition. In particular, the polymer sheath is made of an ester polymer having a high glass transition temperature, and the sheath protective film is made of an acrylic polymer having a low glass transition temperature. Among them, the low glass transition temperature of the acrylic polymer helps to improve the softness and corrosion resistance of the quantum dot fiber, thereby effectively preventing the yellowing of the polymer sheath during storage or processing, and avoiding water and oxygen passing through the rayon. The purpose of the polymer to erode quantum dots.

Description

高穩定性量子點纖維及具有該高穩定性量子點纖維的防偽織物High stability quantum dot fiber and anti-counterfeit fabric having the high stability quantum dot fiber

本發明係關於纖維與織物之技術領域,尤指一種高穩定性量子點纖維及具有該高穩定性量子點纖維的一種防偽織物。The invention relates to the technical field of fibers and fabrics, in particular to a high stability quantum dot fiber and a security fabric having the high stability quantum dot fiber.

防偽技術(Anti-counterfeiting technology)的實施可用以遏止侵權者未經所有權人准許而進行產品仿製之活動。目前,防偽技術被分為:印刷防偽技術、化學材料防偽技術、物理防偽技術、數碼信息防偽技術、結構和包裝防偽技術。The implementation of anti-counterfeiting technology can be used to curb the infringer's activities of product imitation without the permission of the owner. At present, anti-counterfeiting technology is divided into: printing anti-counterfeiting technology, chemical material anti-counterfeiting technology, physical anti-counterfeiting technology, digital information anti-counterfeiting technology, structure and packaging anti-counterfeiting technology.

量子點纖維及其織物被發展為新興的防偽技術。中國專利號CN106245129即揭示了一種量子點纖維的製造方法,係包括以下製造步驟: (1’)將量子點加入有機溶劑之中,均勻攪拌後獲得量子點溶液; (2’)將添加劑聚合物依序加入量子點溶液之中,均勻攪拌後獲得量子點紡絲溶液; (3’)利用靜電紡絲設備將量子點紡絲溶液加工製成量子點纖維。Quantum dot fibers and their fabrics have been developed as emerging anti-counterfeiting technologies. Chinese Patent No. CN106245129 discloses a method for manufacturing quantum dot fibers, which comprises the following manufacturing steps: (1') adding quantum dots to an organic solvent, uniformly stirring to obtain a quantum dot solution; (2') adding an additive polymer The quantum dot spinning solution is sequentially added to the quantum dot solution, and uniformly stirred to obtain a quantum dot spinning solution; (3') the quantum dot spinning solution is processed into a quantum dot fiber by an electrospinning device.

請參閱圖1A、圖1B與圖1C,係顯示量子點防偽織物的示意圖。如圖1A所示,量子點防偽織物1’的簡單構造係包括:一主體11’、 一防偽織帶12’與一防偽圖案13’。其中,該主體11’為一個由複數條纖維織成的織物基底或一個紙製基底。另一方面,搭配使用複數條量子點纖維與複數條聚合物纖維可以織成防偽織帶12’與防偽圖案13’。特別地,圖1A顯示該防偽圖案13’為幾何圖形與圖樣之組合。與圖1A不同的是,圖1B顯示該防偽圖案13’為一個一維條形碼(1D barcode)。於防偽技術上,可利用多條寬度不同、螢光色也不同的量子點纖維組成所述條形碼,使得該條形碼的光激螢光(Photoluminescence, PL)光譜包括多個不同強度與波長之可見光波段,作為一組編碼。另一方面,圖1C則顯示該防偽圖案13’為字母與數字之組合碼。Referring to FIG. 1A, FIG. 1B and FIG. 1C, a schematic diagram of a quantum dot security fabric is shown. As shown in Fig. 1A, the simple configuration of the quantum dot security fabric 1' includes a main body 11', a security webbing 12' and a security pattern 13'. Here, the main body 11' is a woven fabric substrate or a paper substrate woven from a plurality of fibers. On the other hand, the anti-counterfeit webbing 12' and the security pattern 13' can be woven by using a plurality of quantum dot fibers and a plurality of polymer fibers in combination. In particular, Figure 1A shows the security pattern 13' as a combination of geometry and pattern. Different from Fig. 1A, Fig. 1B shows that the security pattern 13' is a one-dimensional barcode (1D barcode). In the anti-counterfeiting technology, a plurality of quantum dot fibers having different widths and different fluorescent colors may be used to form the barcode, so that the photoluminescence (PL) spectrum of the barcode includes a plurality of visible light bands of different intensities and wavelengths. As a set of codes. On the other hand, Fig. 1C shows that the security pattern 13' is a combination of letters and numbers.

量子點防偽織物1’展現了令人感興趣的防偽技術。然而,單核量子點(例如:CdSe)很容易與環境中的水氧分子反應,造成量子點穩定性不佳的問題。雖然殼核結構量子點(CdSe-ZnS)與多元合金量子點(Cd 1-XZn XSe或Cd 1-XZn 1-XSe)的提出與應用係改善了傳統單核量子點穩定性不佳的問題,但結構複雜的量子點也同時顯示出製程複雜及高成本等缺陷。相反地,選擇結構簡單的量子點作為嵌於防偽織帶12’之中的螢光物質又會顯示出穩定度不足之缺陷。因此,如何開發出兼具高穩定度與低成本的量子點防偽織物於是成為一個值得重視的課題。有鑑於此,本案之發明人係極力加以研究發明,而終於研發完成本發明之一種高穩定性量子點纖維及具有該高穩定性量子點纖維的一種防偽織物。 The quantum dot security fabric 1' exhibits an interesting anti-counterfeiting technique. However, mononuclear quantum dots (eg, CdSe) readily react with water-oxygen molecules in the environment, causing problems with poor quantum dot stability. Although the proposed and applied applications of core-nuclear structure quantum dots (CdSe-ZnS) and multi-alloy quantum dots (Cd 1-X Zn X Se or Cd 1-X Zn 1-X Se) improve the stability of traditional mononuclear quantum dots. Good problems, but complex quantum dots also show defects in process complexity and high cost. Conversely, the selection of a quantum dot having a simple structure as a fluorescent substance embedded in the security web 12' may show a defect of insufficient stability. Therefore, how to develop a quantum dot anti-counterfeiting fabric with high stability and low cost has become a subject worthy of attention. In view of this, the inventors of the present invention have tried their best to study the invention, and finally developed a high-stability quantum dot fiber of the present invention and a security fabric having the high-stability quantum dot fiber.

本發明之目的在於提出一種高穩定性的量子點纖維及具有該高穩定性的量子點纖維的一種防偽織物。不同於習知的量子點纖維顯示出穩定度與發光效率不佳的問題,本發明所提出的高穩定性的量子點纖維主要係由複數個量子點、一聚合物鞘、以及一鞘保護膜所構成。特別地,聚合物鞘係以具有高玻璃轉換溫度的酯類聚合物製成,且鞘保護膜係以具有低玻璃轉換溫度的丙烯酸聚合物製成。其中,低玻璃轉換溫度的丙烯酸聚合物有助於提升量子點纖維的柔軟度及耐腐蝕性,進而可以有效避免聚合物鞘於貯存或加工過程中產生泛黃現象,達到避免水氧通過人造纖維聚合物而侵蝕量子點之目的。The object of the present invention is to provide a high stability quantum dot fiber and a security fabric having the high stability quantum dot fiber. Different from the conventional quantum dot fiber, the stability and the luminous efficiency are not good. The high stability quantum dot fiber proposed by the invention mainly consists of a plurality of quantum dots, a polymer sheath, and a sheath protective film. Composition. In particular, the polymer sheath is made of an ester polymer having a high glass transition temperature, and the sheath protective film is made of an acrylic polymer having a low glass transition temperature. Among them, the low glass transition temperature of the acrylic polymer helps to improve the softness and corrosion resistance of the quantum dot fiber, thereby effectively preventing the yellowing of the polymer sheath during storage or processing, and avoiding water and oxygen passing through the rayon. The purpose of the polymer to erode quantum dots.

為了達成上述本發明之主要目的,本案之發明人係提供所述高穩定性量子點纖維的一第1實施例,其構成上係包括: 一聚合物鞘(polymer sheath); 複數個量子點,係摻雜或包覆於該聚合物鞘之中;以及 一鞘保護膜,係包覆該聚合物鞘。In order to achieve the above-mentioned primary object of the present invention, the inventors of the present invention provide a first embodiment of the high-stability quantum dot fiber, which is composed of: a polymer sheath; a plurality of quantum dots, Doped or coated in the polymer sheath; and a sheath protective film that coats the polymer sheath.

並且,為了達成上述本發明之主要目的,本案之發明人係同時提供所述高穩定性量子點纖維的一第2實施例,其構成上係包括: 一極性芯; 一聚合物鞘,係包覆該極性芯; 複數個量子點,係吸附於該極性芯之表面,藉以摻雜或包覆於該聚合物鞘之中;以及 一鞘保護膜,係包覆該聚合物鞘。Further, in order to achieve the above-mentioned primary object of the present invention, the inventors of the present invention simultaneously provide a second embodiment of the high-stability quantum dot fiber, which is composed of: a polar core; a polymer sheath, a package The polar core is coated; a plurality of quantum dots are adsorbed on the surface of the polar core to be doped or coated in the polymer sheath; and a sheath protective film is coated on the polymer sheath.

並且,為了達成上述本發明之主要目的,本案之發明人係同時提供所述高穩定性量子點纖維的一第3實施例,其構成上係包括: 一極性芯; 一聚合物鞘,係包覆該極性芯; 複數個量子點,係吸附於該極性芯之表面,藉以摻雜或包覆於該聚合物鞘之中; 一鞘保護膜,係包覆該聚合物鞘;以及 複數親水性奈米粒子,係混摻於該鞘保護膜之內。Further, in order to achieve the above-mentioned primary object of the present invention, the inventors of the present invention simultaneously provide a third embodiment of the high-stability quantum dot fiber, which is composed of: a polar core; a polymer sheath, a package Covering the polar core; a plurality of quantum dots adsorbed on the surface of the polar core to be doped or coated in the polymer sheath; a sheath protective film covering the polymer sheath; and a plurality of hydrophilic groups Nanoparticles are blended into the sheath protective film.

於所述高穩定性量子點纖維的第1實施例、第2實施例與第3實施例之中,該聚合物鞘的製造材料可為下列任一種:聚酯(Polyester, PET)、聚氨酯(Polyurethane, PU)、聚氯乙烯(Poly(vinyl chloride), PVC)、聚丙烯(Poly propylene, PP)、或聚醯胺(Polyamide, PA),或以上的組合物或共聚物,或與非人造材料之共織物。In the first embodiment, the second embodiment, and the third embodiment of the high-stability quantum dot fiber, the polymer sheath may be made of any of the following materials: polyester (Polyester, PET), polyurethane ( Polyurethane, PU), Poly(vinyl chloride, PVC), Polypropylene (PP), or Polyamide (PA), or a combination or copolymer of the above, or non-man-made Co-fabric of materials.

於所述高穩定性量子點纖維的第1實施例、第2實施例與第3實施例之中,該鞘保護膜係由具低玻璃轉換溫度的一丙烯酸聚合物單體製成。In the first embodiment, the second embodiment, and the third embodiment of the high-stability quantum dot fiber, the sheath protective film is made of an acrylic polymer monomer having a low glass transition temperature.

於所述高穩定性量子點纖維的第1實施例、第2實施例與第3實施例之中,該量子點可為下列任一者:II-VI族量子點、III-V族量子點、具有殼-核結構之II-VI族量子點、具有殼-核結構之III-V族量子點、具有合金結構之非球形II-VI量子點、上述任兩者之組合、或上述任兩者以上之組合。In the first embodiment, the second embodiment, and the third embodiment of the high-stability quantum dot fiber, the quantum dot may be any of the following: II-VI quantum dots, III-V quantum dots. a group II-VI quantum dot having a shell-core structure, a III-V quantum dot having a shell-core structure, an aspherical II-VI quantum dot having an alloy structure, a combination of any two of the above, or any two of the above The combination of the above.

於所述高穩定性量子點纖維的第1實施例、第2實施例與第3實施例之中,該量子點為一具有合金結構的非球形量子點,係於結構上包括: 一化合物核,係由化學式M1A1所表示; 一內殼層,係圍繞該化合物核,並由化學式M1 xM2 1-xA1 yA2 1-y所表示;以及 一多足結構外殼層,係圍繞該內殼層,係由化學式M1A2或M2A2所表示。 In the first embodiment, the second embodiment, and the third embodiment of the high-stability quantum dot fiber, the quantum dot is an aspherical quantum dot having an alloy structure, and the structure comprises: a compound core , represented by the chemical formula M1A1; an inner shell surrounding the core of the compound and represented by the chemical formula M1 x M2 1-x A1 y A2 1-y ; and a multi-legged outer shell surrounding the inner shell The layer is represented by the chemical formula M1A2 or M2A2.

於所述高穩定性量子點纖維的第1實施例、第2實施例與第3實施例之中,係更包括一耐候性層,係覆於該鞘保護膜之上;其中,該耐候性層之製造材料可為下列任一者:氟素聚合物或氧化物。In the first embodiment, the second embodiment, and the third embodiment of the high-stability quantum dot fiber, a weather-resistant layer is further included on the sheath protective film; wherein the weather resistance is The material from which the layer is made may be any of the following: a fluorocarbon polymer or an oxide.

於所述高穩定性量子點纖維的第2實施例之中,該極性芯為一球狀芯或一條狀芯;並且,該極性芯的製造材料可為下列任一者:二氧化矽(Silica,SiO2)、聚甲基丙烯酸甲酯(Polymethylmethacrylate,PMMA)、前述任一者之表面改質物、前述任兩者之組合、或前述任兩者以上之組合。In the second embodiment of the high-stability quantum dot fiber, the polar core is a spherical core or a strip core; and the polar core can be made of any of the following: cerium oxide (Silica) SiO2), polymethylmethacrylate (PMMA), a surface modification of any of the above, a combination of any two of the above, or a combination of any two or more of the foregoing.

於所述高穩定性量子點纖維的第2實施例之中,該親水性奈米粒子之製造材料可為下列任一者:二氧化矽(Silica,SiO2)粒子、二氧化鈦(Titania,TiO2)粒子、甲基乙烯基醚-馬來酸酐共聚物單烷基酯、聚乙烯吡咯烷酮(polyvinyl pyrrolidone,PVP)、或聚丙烯酸鹽類。In the second embodiment of the high-stability quantum dot fiber, the hydrophilic nanoparticle can be made of any of the following: cerium dioxide (Silica, SiO2) particles, titanium dioxide (Titania, TiO2) particles. , methyl vinyl ether-maleic anhydride copolymer monoalkyl ester, polyvinyl pyrrolidone (PVP), or polyacrylate.

為了能夠更清楚地描述本發明所提出之一種高穩定性量子點纖維及具有該高穩定性量子點纖維的一種防偽織物,以下將配合圖式,詳盡說明本發明之較佳實施例。In order to more clearly describe a high-stability quantum dot fiber and an anti-counterfeit fabric having the high-stability quantum dot fiber proposed by the present invention, a preferred embodiment of the present invention will be described in detail below with reference to the drawings.

高穩定性量子點纖維的第一實施例First embodiment of high stability quantum dot fiber

請參閱圖2,係顯示本發明之一種高穩定性量子點纖維的第一實施例的剖視圖。如圖2所示,本發明之高穩定性量子點纖維1係於結構上包括:複數個量子點11、一聚合物鞘(polymer sheath)12、以及一鞘保護膜(sheath protecting film)13;其中,聚合物鞘12係由一聚合物材料製成。常見的人造纖維之聚合物材料包括聚酯(Polyester, PET)、聚氨酯(Polyurethane, PU)、聚氯乙烯(Poly(vinyl chloride), PVC)、聚丙烯(Poly propylene, PP)、或聚醯胺(Polyamide, PA)。Referring to Figure 2, there is shown a cross-sectional view of a first embodiment of a high stability quantum dot fiber of the present invention. As shown in FIG. 2, the high stability quantum dot fiber 1 of the present invention comprises: a plurality of quantum dots 11, a polymer sheath 12, and a sheath protecting film 13; Among them, the polymer sheath 12 is made of a polymer material. Common synthetic fiber materials include polyester (Polyester, PET), polyurethane (PU), polyvinyl (vinyl chloride), PVC, polypropylene (PP), or polyamide. (Polyamide, PA).

值得說明的是,一些研究指出含有乙烯基(vinyl)的聚合物單體會於嬰兒或敏感膚質患者的皮膚引發紅腫、發癢等症狀。因此,為了改善類似的問題,聚合物鞘12也可以由一高分子聚合物製成,且該高分子聚合物含有重量比例(wt%)至少大於50的一矽土(silica)材料,使得該高分子聚合物的化學結構式為[Si(CH 3) 2O] n;其中,n係介於50-100之間。 It is worth noting that some studies have pointed out that vinyl monomers containing vinyl may cause redness, itching and other symptoms in the skin of infants or sensitive skin patients. Therefore, in order to improve the similar problem, the polymer sheath 12 may also be made of a high molecular polymer, and the high molecular polymer contains a silica material in a weight ratio (wt%) of at least more than 50, such that The chemical structure of the polymer is [Si(CH 3 ) 2 O] n ; wherein the n is between 50 and 100.

量子點11作為一光轉換器(light converter),其可以是II-VI族量子點、III-V族量子點、具有殼-核結構之II-VI族量子點、或具有殼-核結構之III-V族量子點、具有合金結構之非球形II-VI量子點、上述任兩者之組合、或上述任兩者以上之組合。並且,各種不同的量子點材料係整理於下表(1)中。 表(1) <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> 種類 </td><td> 示範性材料 </td></tr><tr><td> II-VI族量子點 </td><td> CdSe 或 CdS </td></tr><tr><td> III-V族量子點 </td><td> (Al, In, Ga)P、(Al, In, Ga)As、或 (Al, In, Ga)N </td></tr><tr><td> 具有殼-核結構之 II-VI族量子點 </td><td> CdSe/ZnS </td></tr><tr><td> 具有殼-核結構之 III-V族量子點 </td><td> InP/ZnS </td></tr><tr><td> 具有合金結構之非球形 II-VI量子點 </td><td> ZnCdSeS </td></tr></TBODY></TABLE>The quantum dot 11 functions as a light converter, which may be a II-VI quantum dot, a III-V quantum dot, a II-VI quantum dot having a shell-core structure, or a shell-core structure. A III-V group quantum dot, an aspherical II-VI quantum dot having an alloy structure, a combination of any two of the above, or a combination of any two or more of the above. Also, various quantum dot material materials are organized in the following Table (1). Table 1)  <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> Category</td><td> Exemplary material</td></tr><tr ><td> II-VI Quantum Dots</td><td> CdSe or CdS </td></tr><tr><td> III-V Quantum Dots</td><td> (Al, In, Ga)P, (Al, In, Ga)As, or (Al, In, Ga)N </td></tr><tr><td> Group II-VI quantum dots having a shell-core structure </td><td> CdSe/ZnS </td></tr><tr><td> III-V Quantum Dots with Shell-Nuclear Structure</td><td> InP/ZnS </td> </tr><tr><td> Non-spherical II-VI quantum dots with alloy structure</td><td> ZnCdSeS </td></tr></TBODY></TABLE>

必須特別說明的是,表(1)所列出的該些示範性材料並非用以限制該量子點11的種類。例如,圖3顯示具特殊非球形結構之量子點的示意性結構圖。如圖3所示,量子點11也可以是一個具有合金結構的非球形量子點,並於結構上包括:由化學式M1A1所表示的一化合物核112、由化學式M1 xM2 1-xA1 yA2 1-y所表示的一內殼層113、以及由化學式M1A2或M2A2所表示的一多足結構外殼層114。必須特別說明的是,於化學式M1 xM2 1-xA1 yA2 1-y之中,0<x<1且0<y<1。並且,y係沿著自該化合物核112的表面朝向該內殼層113的表面的一第一方向逐漸降低。另一方面,多足結構外殼層114有一基部1141及複數個突起部1142,且該複數個突起部1142係彼此間隔並自該基部1141往遠離該內殼層113的一第二方向延伸。 It must be particularly noted that the exemplary materials listed in Table (1) are not intended to limit the type of quantum dots 11. For example, Figure 3 shows a schematic structural diagram of a quantum dot having a special non-spherical structure. As shown in FIG. 3, the quantum dot 11 may also be an aspherical quantum dot having an alloy structure, and structurally include: a compound core 112 represented by the chemical formula M1A1, which is represented by the chemical formula M1 x M2 1-x A1 y A2 An inner shell layer 113 represented by 1-y , and a multi-legged outer shell layer 114 represented by the chemical formula M1A2 or M2A2. It must be particularly noted that among the chemical formulas M1 x M2 1-x A1 y A2 1-y , 0 < x < 1 and 0 < y < 1. Further, y is gradually decreased in a first direction from the surface of the compound core 112 toward the surface of the inner shell layer 113. On the other hand, the multi-legged structural outer layer 114 has a base portion 1141 and a plurality of protrusions 1142, and the plurality of protrusions 1142 are spaced apart from each other and extend from the base portion 1141 in a second direction away from the inner casing layer 113.

承上述,M1與M2為不同的材料,且M1與M2可以為下列任一種材料:Zn、Sn、Pb、Cd、In、Ga、Ge、Mn、Co、Fe、Al、Mg、Ca、Sr、Ba、Ni、Ag、Ti、或Cu。另外,A1與A2也是不同的材料,且A1與A2可以為下列任一種材料:Se、S、Te、P、As、N、I、或O。In view of the above, M1 and M2 are different materials, and M1 and M2 may be any of the following materials: Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti, or Cu. In addition, A1 and A2 are also different materials, and A1 and A2 may be any of the following materials: Se, S, Te, P, As, N, I, or O.

接著請參閱圖4A、圖4B、與圖4C所示的本發明之高穩定性量子點纖維的製程示意圖。本發明之高穩定性量子點纖維的第一實施例可利用以下步驟製造而得: 步驟(1):如圖4A所示,將複數顆量子點11加入一具有高玻璃轉換溫度(High Tg)的一酯類單體溶液12a之中,經聚合與造粒製程後獲得複數顆母粒半成品2; 步驟(2):如圖4B所示,將該複數顆母粒半成品2加入一具有低玻璃轉換溫度(Low Tg)的一丙烯酸單體溶液13a之中,經聚合與造粒製程後獲得複數顆纖維母粒3; 步驟(3):如圖4C所示,經抽絲製程後將該複數顆纖維母粒3製成複數條量子點纖維1。Next, please refer to the process diagram of the high stability quantum dot fiber of the present invention shown in FIG. 4A, FIG. 4B and FIG. 4C. The first embodiment of the high stability quantum dot fiber of the present invention can be produced by the following steps: Step (1): As shown in FIG. 4A, a plurality of quantum dots 11 are added to have a high glass transition temperature (High Tg). In the monoester monomer solution 12a, a plurality of masterbatch semi-finished products 2 are obtained after the polymerization and granulation process; Step (2): as shown in FIG. 4B, the plurality of masterbatch semi-finished products 2 are added to have a low glass. In the acrylic acid monomer solution 13a of the conversion temperature (Low Tg), a plurality of fiber masterbatches 3 are obtained after the polymerization and granulation process; Step (3): as shown in FIG. 4C, the plural number is obtained after the spinning process The fiber masterbatch 3 is made into a plurality of quantum dot fibers 1.

於此高穩定性量子點纖維1之中,將低玻璃轉換溫度的丙烯酸聚合物(即,鞘保護膜13)覆於高玻璃轉換溫度的聚酯膜(即,聚合物鞘12)之外,係有助於提升量子點纖維1的柔軟度及耐腐蝕性。例如,聚甲基丙烯酸甲酯有助於提升聚合物鞘12的抗氧化性,有效避免聚合物鞘12於貯存或加工過程中產生泛黃現象。可想而知,第一實施例係利用鞘保護膜13提升人造纖維聚合物的柔軟度及耐腐蝕性,藉此方式避免水氧通過人造纖維聚合物而侵蝕量子點11。Among the high-stability quantum dot fibers 1, an acrylic polymer having a low glass transition temperature (that is, a sheath protective film 13) is coated on the high glass transition temperature polyester film (ie, the polymer sheath 12). It helps to improve the softness and corrosion resistance of the quantum dot fiber 1. For example, polymethyl methacrylate helps to enhance the oxidation resistance of the polymer sheath 12, effectively preventing the polymer sheath 12 from yellowing during storage or processing. It is conceivable that the first embodiment utilizes the sheath protective film 13 to enhance the softness and corrosion resistance of the rayon polymer, thereby preventing the water oxygen from eroding the quantum dots 11 through the rayon polymer.

高穩定性量子點纖維的第二實施例Second embodiment of high stability quantum dot fiber

請參閱圖5A與圖5B,係顯示本發明之一種高穩定性量子點纖維的第二實施例的剖視圖。比較圖2與圖5A可以發現,相較於前述第一實施例,所述高穩定性量子點纖維1的第二實施例係於結構上更包括有一極性芯10,用以作為該複數顆量子點11的擔體。換句話說,不同於第一實施例將複數顆量子點11摻雜、分散於聚合物鞘12之中,第二實施例係將該些量子點11吸附於該極性芯10的表面。於第二實施例中,極性芯10的製造材料可以是二氧化矽(Silica, SiO 2)、聚甲基丙烯酸甲酯(Polymethylmethacrylate, PMMA)、前述任一者之改質物、前述任兩者之組合、或前述任兩者以上之組合。並且,就結構而言,極性芯10可以為一球狀芯或一條狀芯。此外,如圖5B所示,極性芯10的數量也可以是多個。 Referring to Figures 5A and 5B, there are shown cross-sectional views of a second embodiment of a high stability quantum dot fiber of the present invention. Comparing FIG. 2 with FIG. 5A, it can be found that, in comparison with the foregoing first embodiment, the second embodiment of the high-stability quantum dot fiber 1 further includes a polar core 10 as the plurality of quantum structures. Point 11 is the body. In other words, unlike the first embodiment, a plurality of quantum dots 11 are doped and dispersed in the polymer sheath 12, and in the second embodiment, the quantum dots 11 are adsorbed on the surface of the polar core 10. In the second embodiment, the polar core 10 may be made of cerium oxide (Silica, SiO 2 ), polymethylmethacrylate (PMMA), a modified substance of any of the foregoing, or both of the foregoing. Combination, or a combination of any two or more of the foregoing. Also, in terms of structure, the polar core 10 may be a spherical core or a strip core. Further, as shown in FIG. 5B, the number of the polar cores 10 may be plural.

高穩定性量子點纖維的第三實施例Third embodiment of high stability quantum dot fiber

請參閱圖6,係顯示本發明之一種高穩定性量子點纖維的第三實施例的剖視圖。比較圖5A與圖6可以發現,相較於前述第二實施例,所述高穩定性量子點纖維1的第三實施例係於結構上更包括有混摻於該鞘保護膜13之內的複數顆親水性奈米粒子14。於第三實施例中,所述親水性奈米粒子14的製造材料可以是二氧化矽(Silica,SiO 2)、二氧化鈦(Titania,TiO 2)、甲基乙烯基醚-馬來酸酐共聚物單烷基酯、聚乙烯吡咯烷酮(polyvinyl pyrrolidone,PVP)、或聚丙烯酸鹽類。透過將親水性奈米粒子14摻雜於鞘保護膜13之內,可提升鞘保護膜13抗油汙性,避免油汙通過鞘保護膜13而侵入聚合物鞘12。 Referring to Figure 6, there is shown a cross-sectional view of a third embodiment of a high stability quantum dot fiber of the present invention. Comparing FIG. 5A with FIG. 6, it can be seen that the third embodiment of the high-stability quantum dot fiber 1 is structurally further included in the structure of the sheath protective film 13 as compared with the foregoing second embodiment. A plurality of hydrophilic nanoparticles 14. In the third embodiment, the hydrophilic nanoparticle 14 may be made of cerium oxide (Silica, SiO 2 ), titanium dioxide (Titania, TiO 2 ), methyl vinyl ether-maleic anhydride copolymer. Alkyl esters, polyvinyl pyrrolidone (PVP), or polyacrylates. By doping the hydrophilic nanoparticle 14 into the sheath protective film 13, the oil-repellent property of the sheath protective film 13 can be improved, and the oil stain can be prevented from intruding into the polymer sheath 12 through the sheath protective film 13.

高穩定性量子點纖維的第四實施例Fourth Embodiment of High Stability Quantum Dot Fiber

請參閱圖7,係顯示本發明之一種高穩定性量子點纖維的第四實施例的剖視圖。比較圖5A與圖7可以發現,相較於前述第二實施例,所述高穩定性量子點纖維1的第四實施例係於結構上更包括覆於該鞘保護膜13之上一耐候性層15。於第四實施例中,所述耐候性層15可由氟素聚合物或氧化物製成,用以增加量子點纖維1的耐候性或防水性。Referring to Figure 7, there is shown a cross-sectional view of a fourth embodiment of a high stability quantum dot fiber of the present invention. Comparing FIG. 5A with FIG. 7, it can be seen that the fourth embodiment of the high-stability quantum dot fiber 1 is structurally further including a weathering property over the sheath protective film 13 as compared with the foregoing second embodiment. Layer 15. In the fourth embodiment, the weather resistant layer 15 may be made of a fluoropolymer or an oxide to increase the weather resistance or water repellency of the quantum dot fiber 1.

如此,上述說明係已清楚、完整地介紹本發明之高穩定性量子點纖維1的所有實施例。接著,下文將繼續說明具有該高穩定性量子點纖維1的一種防偽織物的所有實施例。Thus, the above description has clearly and completely described all embodiments of the high stability quantum dot fiber 1 of the present invention. Next, all embodiments of a security fabric having the high stability quantum dot fiber 1 will be described below.

請參閱圖8,係顯示本發明之一種防偽織物的應用圖。如圖8所示,所述防偽織物4係貼附於具有防偽需求的產品5上,例如圖8所示的T字衫(T-shirt)。並且,如圖9A與圖9B所示的具有防偽需求的產品之立體圖所示,所述防偽織物4也可以貼附至名牌背包或名牌球鞋之上,增加其防偽功效。於本發明中,所述防偽織物4主要由一主體41與一防偽圖案(anti-counterfeiting pattern)42組成;其中,該主體41可以是與所述具有防偽需求的產品5相互獨立的一織物基底、一紙製基底、或一硬質基底。若以織物基底作為主體41,則該織物基底可以利用複數條纖維加工織成。另一方面,該防偽圖案42則是以前文所介紹的高穩定性量子點纖維1加工織成。Referring to Figure 8, there is shown an application diagram of a security fabric of the present invention. As shown in Fig. 8, the security fabric 4 is attached to a product 5 having anti-counterfeiting requirements, such as a T-shirt as shown in Fig. 8. Moreover, as shown in the perspective view of the product having anti-counterfeiting requirements as shown in FIGS. 9A and 9B, the anti-counterfeiting fabric 4 can also be attached to a brand-name backpack or a brand-name sneaker to increase its anti-counterfeiting effect. In the present invention, the security fabric 4 is mainly composed of a main body 41 and an anti-counterfeiting pattern 42; wherein the main body 41 may be a fabric substrate independent of the product 5 having anti-counterfeiting requirements. , a paper substrate, or a rigid substrate. If the fabric substrate is used as the main body 41, the fabric substrate can be woven using a plurality of fibers. On the other hand, the security pattern 42 is processed by the high-stability quantum dot fiber 1 described above.

圖8係顯示該防偽圖案42為一圖形,然而並非以此限制防偽圖案42的呈現態樣。就實務上的防偽手段而言,該防偽圖案42可為下列任一者:量子點之螢光顏色、量子點之螢光波長、量子點之螢光強度、圖形、文字、字母、數字、一維條碼(1D barcode)、二維條碼(2D barcode)、漢信碼(Chinese-sensible code)、QR碼、矩陣條碼(Maxicode)、上述任兩者之組合、或上述任兩者以上之組合。必須特別說明的是,如圖10所示的防偽織物的上視圖所示,可以利用相同顏色的量子點纖維1織成所述防偽圖案42;當然,可以利用不同顏色的量子點纖維1織成所述防偽圖案42(如圖8所示)。FIG. 8 shows that the security pattern 42 is a graphic, but this does not limit the appearance of the security pattern 42. In terms of practical anti-counterfeiting means, the anti-counterfeiting pattern 42 can be any of the following: the fluorescent color of the quantum dot, the fluorescent wavelength of the quantum dot, the fluorescent intensity of the quantum dot, the graphic, the text, the letter, the number, and the A barcode (1D barcode), a 2D barcode, a Chinese-sensible code, a QR code, a matrix barcode (Maxicode), a combination of any two of the above, or a combination of any two or more of the above. It should be particularly noted that, as shown in the upper view of the security fabric shown in FIG. 10, the anti-counterfeiting pattern 42 can be woven by the quantum dot fibers 1 of the same color; of course, the quantum dot fibers 1 of different colors can be woven. The security pattern 42 (shown in Figure 8).

值得說明的是,若以量子點之螢光顏色、量子點之螢光波長、及量子點之螢光強度作為防偽手段,則必須先使用紫外燈照射由複數條量子點纖維織成的防偽圖案42,接著再利用光譜儀(spectrometer)分析防偽圖案42發出的螢光之波長組成與強度。參考圖11A所示的光激螢光(Photoluminescence, PL)光譜圖,其中顯示防偽圖案42所發出的螢光係包括多束不同色光,且該些色光的強度亦不同。因此,吾人便可以透過對所述多個光色與多個強度進行編碼,進而獲得一防偽碼。另外,參考圖11B所示的光激螢光光譜圖,其中顯示防偽圖案42所發出的螢光包括多束不同強度的單色光,且該單色光的顏色皆相同。因此,吾人便可以透過對所述不同單色光及其對應強度進行編碼,進而獲得一防偽碼。It is worth noting that if the fluorescent color of the quantum dot, the fluorescent wavelength of the quantum dot, and the fluorescent intensity of the quantum dot are used as anti-counterfeiting means, the anti-counterfeiting pattern woven by the plurality of quantum dot fibers must be irradiated with the ultraviolet lamp. 42. The wavelength composition and intensity of the fluorescent light emitted by the anti-counterfeiting pattern 42 are then analyzed using a spectrometer. Referring to the photoluminescence (PL) spectrum shown in FIG. 11A, the fluorescent light emitted by the display security pattern 42 includes a plurality of different colored lights, and the intensity of the colored lights is also different. Therefore, we can obtain a security code by encoding the plurality of light colors and the plurality of intensities. In addition, referring to the optical fluorescence spectrum shown in FIG. 11B, the fluorescent light emitted by the display security pattern 42 includes a plurality of monochromatic lights of different intensities, and the colors of the monochromatic lights are the same. Therefore, we can obtain a security code by encoding the different monochromatic lights and their corresponding intensities.

必須補充說明的是,若以硬質基板作為所述主體41,則所述硬質基板可以是塑膠基板、金屬基板、木質基板等易於加工的基板。更富創意地,如圖12所示的主體與防偽圖案的立體圖所示,施作上可以使用導光板作為主體41,並令防偽圖案42貼附於該導光板之上。進一步地,將防偽織物4應用至具有防偽需求的產品5之上時,可同時於該具有防偽需求的產品5之內安裝一LED之UV光條6。如此設計,使用者只需要點亮該LED之UV光條6,便可以令防偽圖案42發出螢光,藉此方式啟用防偽辨識。It should be noted that, if a hard substrate is used as the main body 41, the hard substrate may be a substrate that is easy to process such as a plastic substrate, a metal substrate, or a wood substrate. More creatively, as shown in the perspective view of the main body and the security pattern shown in FIG. 12, a light guide plate can be used as the main body 41, and the security pattern 42 is attached to the light guide plate. Further, when the security fabric 4 is applied to the product 5 having anti-counterfeiting requirements, an LED light strip 6 of an LED can be mounted simultaneously in the product 5 having the anti-counterfeiting requirement. In this way, the user only needs to illuminate the UV strip 6 of the LED, so that the anti-counterfeiting pattern 42 can be illuminated, thereby enabling anti-counterfeiting identification.

如此,上述係已完整且清楚地說明本發明之高穩定性量子點纖維及具有該高穩定性量子點纖維的防偽織物;並且,經由上述可以得知本發明係具有下列之優點:Thus, the above-mentioned system has completely and clearly explained the high-stability quantum dot fiber of the present invention and the security fabric having the high-stability quantum dot fiber; and, as described above, the present invention has the following advantages:

(1)不同於習知的量子點纖維顯示出穩定度與發光效率不佳的問題,本發明提出一種高穩定性的量子點纖維1,主要係由複數個量子點11、一聚合物鞘12、以及一鞘保護膜13所構成。特別地,聚合物鞘12係以具有高玻璃轉換溫度的酯類聚合物製成,且鞘保護膜13係以具有低玻璃轉換溫度的丙烯酸聚合物製成。其中,低玻璃轉換溫度的丙烯酸聚合物有助於提升量子點纖維1的柔軟度及耐腐蝕性,進而可以有效避免聚合物鞘12於貯存或加工過程中產生泛黃現象,達到避免水氧通過人造纖維聚合物而侵蝕量子點11之目的。(1) Unlike conventional quantum dot fibers which exhibit poor stability and luminous efficiency, the present invention provides a highly stable quantum dot fiber 1 mainly composed of a plurality of quantum dots 11, a polymer sheath 12 And a sheath protective film 13 is formed. Specifically, the polymer sheath 12 is made of an ester polymer having a high glass transition temperature, and the sheath protective film 13 is made of an acrylic polymer having a low glass transition temperature. Among them, the low glass transition temperature of the acrylic polymer helps to improve the softness and corrosion resistance of the quantum dot fiber 1, thereby effectively preventing the yellowing of the polymer sheath 12 during storage or processing, thereby avoiding the passage of water and oxygen. The purpose of eroding quantum dots 11 by rayon polymers.

必須加以強調的是,上述之詳細說明係針對本發明可行實施例之具體說明,惟該實施例並非用以限制本發明之專利範圍,凡未脫離本發明技藝精神所為之等效實施或變更,均應包含於本案之專利範圍中。It is to be understood that the foregoing detailed description of the embodiments of the present invention is not intended to Both should be included in the scope of the patent in this case.

<本發明><present invention>

1‧‧‧量子點纖維1‧‧‧ quantum dot fiber

11‧‧‧量子點11‧‧‧ Quantum dots

12‧‧‧聚合物鞘12‧‧‧ polymer sheath

13‧‧‧鞘保護膜13‧‧‧ Sheath protective film

112‧‧‧化合物核112‧‧‧ compound core

113‧‧‧內殼層113‧‧‧ inner shell

114‧‧‧多足結構外殼層114‧‧‧Multiple structural outer shell

1141‧‧‧基部1141‧‧‧ base

1142‧‧‧突起部1142‧‧‧Protruding

12a‧‧‧酯類單體溶液12a‧‧‧Ester monomer solution

13a‧‧‧丙烯酸單體溶液13a‧‧‧Acrylic monomer solution

3‧‧‧纖維母粒3‧‧‧ fiber masterbatch

2‧‧‧母粒半成品2‧‧‧ masterbatch semi-finished products

10‧‧‧極性芯10‧‧‧Polar core

14‧‧‧親水性奈米粒子14‧‧‧Hydrophilic nanoparticle

15‧‧‧耐候性層15‧‧‧ weathering layer

4‧‧‧防偽織物4‧‧‧Security fabric

5‧‧‧具有防偽需求的產品5‧‧‧Products with anti-counterfeiting needs

41‧‧‧主體41‧‧‧ Subject

42‧‧‧防偽圖案42‧‧‧Anti-counterfeiting pattern

6‧‧‧LED之UV光條6‧‧‧LED UV strips

<習知><知知>

1’‧‧‧量子點防偽織物1'‧‧‧Quantum point security fabric

11’‧‧‧主體11’‧‧‧ Subject

12’‧‧‧防偽織帶12’‧‧‧Anti-counterfeiting webbing

13’‧‧‧防偽圖案13’‧‧‧ security pattern

圖1A係顯示量子點防偽織物的示意圖; 圖1B係顯示量子點防偽織物的示意圖; 圖1C係顯示量子點防偽織物的示意圖; 圖2係顯示本發明之一種高穩定性量子點纖維的第一實施例的剖視圖; 圖3係顯示具特殊非球形結構之量子點的示意性結構圖; 圖4A、圖4B、與圖4C所示的本發明之高穩定性量子點纖維的製程示意圖; 圖5A與圖5B係顯示本發明之一種高穩定性量子點纖維的第二實施例的剖視圖; 圖6係顯示本發明之一種高穩定性量子點纖維的第三實施例的剖視圖; 圖7係顯示本發明之一種高穩定性量子點纖維的第四實施例的剖視圖; 圖8係顯示本發明之一種防偽織物的應用圖; 圖9A與圖9B係顯示具有防偽需求的產品之立體圖; 圖10係顯示防偽織物的上視圖; 圖11A係顯示光激螢光(Photoluminescence, PL)光譜圖; 圖11B係顯示光激螢光光譜圖; 圖12係顯示主體與防偽圖案的立體圖所示。1A is a schematic view showing a quantum dot security fabric; FIG. 1B is a schematic view showing a quantum dot security fabric; FIG. 1C is a schematic view showing a quantum dot security fabric; and FIG. 2 is a first view showing a high stability quantum dot fiber of the present invention. 3 is a schematic structural view showing a quantum dot having a special non-spherical structure; FIG. 4A, FIG. 4B, and FIG. 4C are schematic views showing a process of the high-stability quantum dot fiber of the present invention; FIG. Figure 5B is a cross-sectional view showing a second embodiment of a high-stability quantum dot fiber of the present invention; Figure 6 is a cross-sectional view showing a third embodiment of a high-stability quantum dot fiber of the present invention; A cross-sectional view of a fourth embodiment of a high stability quantum dot fiber of the invention; Fig. 8 is a view showing the application of a security fabric of the present invention; Figs. 9A and 9B are perspective views showing a product having anti-counterfeiting requirements; Fig. 11A shows a photoluminescence (PL) spectrum; Fig. 11B shows a photoluminescence spectrum; Fig. 12 shows a main body and a security map It is shown in perspective in FIG.

Claims (18)

一種高穩定性量子點纖維,係包括:一聚合物鞘;複數個量子點,係摻雜或包覆於該聚合物鞘之中;一鞘保護膜,係包覆該聚合物鞘;以及複數親水性奈米粒子,係混摻於該鞘保護膜之內;其中,該親水性奈米粒子之製造材料可為下列任一者:二氧化矽(Silica,SiO2)粒子、二氧化鈦(Titania,TiO2)粒子、甲基乙烯基醚-馬來酸酐共聚物單烷基酯、聚乙烯吡咯烷酮(polyvinyl pyrrolidone,PVP)、或聚丙烯酸鹽類。 A high stability quantum dot fiber comprising: a polymer sheath; a plurality of quantum dots doped or coated in the polymer sheath; a sheath protective film covering the polymer sheath; and a plurality The hydrophilic nanoparticle is blended into the sheath protective film; wherein the hydrophilic nanoparticle can be made of any of the following: cerium oxide (Silica, SiO 2 ) particles, titanium dioxide (Titania, TiO 2 ) particles, methyl vinyl ether-maleic anhydride copolymer monoalkyl ester, polyvinyl pyrrolidone (PVP), or polyacrylate. 如申請專利範圍第1項所述之高穩定性量子點纖維,其中,該聚合物鞘的製造材料可為下列任一種:聚酯(Polyester,PET)、聚氨酯(Polyurethane,PU)、聚氯乙烯(Poly(vinyl chloride),PVC)、聚丙烯(Poly propylene,PP)、或聚醯胺(Polyamide,PA)。 The high stability quantum dot fiber according to claim 1, wherein the polymer sheath can be made of any of the following materials: polyester (polyester, PET), polyurethane (PU), polyvinyl chloride. (Poly (vinyl chloride), PVC), polypropylene (PP), or Polyamide (PA). 如申請專利範圍第1項所述之高穩定性量子點纖維,其中,該聚合物鞘由一高分子聚合物製成,且該高分子聚合物含有重量比例(wt%)至少大於50的一矽土(silica)材料,使得該高分子聚合物的化學結構式為[Si(CH3)2O]n;其中,n係介於50-100之間。 The high stability quantum dot fiber according to claim 1, wherein the polymer sheath is made of a high molecular polymer, and the high molecular polymer contains a weight ratio (wt%) of at least 50. The silica material has a chemical structural formula of [Si(CH 3 ) 2 O] n ; wherein the n system is between 50 and 100. 如申請專利範圍第1項所述之高穩定性量子點纖維,其中,該量子點可為下列任一者:II-VI族量子點、III-V族量子點、具有殼-核結構之II-VI族量子點、具有殼-核結構之III-V族量子點、具有合金結構之非球形II-VI量子點、上述任兩者之組合、或上述任兩者以上之組合。 The high stability quantum dot fiber according to claim 1, wherein the quantum dot can be any one of the following: a II-VI quantum dot, a III-V quantum dot, and a shell-core structure II. a Group VI quantum dot, a III-V quantum dot having a shell-core structure, an aspherical II-VI quantum dot having an alloy structure, a combination of any two of the above, or a combination of any two or more thereof. 如申請專利範圍第1項所述之高穩定性量子點纖維,其中,該量子點為一具有合金結構的非球形量子點,係於結構上包括:一化合物核,係由化學式M1A1所表示;一內殼層,係圍繞該化合物核,並由化學式M1xM21-xA1yA21-y所表示;以及一多足結構外殼層,係圍繞該內殼層,係由化學式M1A2或M2A2所表示;其中:y係沿著自該化合物核的表面朝向該內殼層的表面的一第一方向逐漸降低,並且0<x<1且0<y<1;所述多足結構外殼層有一基部及複數個突起部,且該複數個突起部係彼此間隔並自該基部往遠離該內殼層的一第二方向延伸;M1與M2可為下列任一種材料:Zn、Sn、Pb、Cd、In、Ga、Ge、Mn、Co、Fe、Al、Mg、Ca、Sr、Ba、Ni、Ag、Ti、或Cu;A1與A2皆為下列任一種材料:Se、S、Te、P、As、N、I、或O。 The high-stability quantum dot fiber according to claim 1, wherein the quantum dot is an aspherical quantum dot having an alloy structure, and the structure comprises: a compound core represented by a chemical formula M1A1; An inner shell surrounding the core of the compound and represented by the chemical formula M1 x M2 1-x A1 y A2 1-y ; and a multi-legged outer shell surrounding the inner shell by the chemical formula M1A2 or M2A2 Wherein: y is gradually decreased along a first direction from the surface of the compound core toward the surface of the inner shell layer, and 0 < x < 1 and 0 < y <1; the multi-legged outer shell layer The base portion and the plurality of protrusions are spaced apart from each other and extend from the base portion in a second direction away from the inner casing layer; M1 and M2 may be any of the following materials: Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti, or Cu; both A1 and A2 are any of the following materials: Se, S, Te, P , As, N, I, or O. 如申請專利範圍第1項所述之高穩定性量子點纖維,其中,該鞘保護膜係由具低玻璃轉換溫度的一丙烯酸聚合物單體製成。 The high-stability quantum dot fiber according to claim 1, wherein the sheath protective film is made of an acrylic polymer monomer having a low glass transition temperature. 如申請專利範圍第1項所述之高穩定性量子點纖維,係更包括至少一極性芯,係包覆於該聚合物鞘之中,並用以作為該複數個量子點之擔體。 The high-stability quantum dot fiber according to claim 1, further comprising at least one polar core coated in the polymer sheath and used as a carrier of the plurality of quantum dots. 如申請專利範圍第1項所述之高穩定性量子點纖維,係更包括一耐候性層,係覆於該鞘保護膜之上;其中,該耐候性層之製造材料可為下列任一者:氟素聚合物或氧化物。 The high-stability quantum dot fiber according to claim 1, further comprising a weather-resistant layer overlying the sheath protective film; wherein the weather-resistant layer can be made of any of the following materials : Fluorinated polymer or oxide. 如申請專利範圍第7項所述之高穩定性量子點纖維,其中,該極性芯為一球狀芯或一條狀芯;並且,該極性芯的製造材料可為下列任一者:二氧化矽(Silica,SiO2)、聚甲基丙烯酸甲酯(Polymethylmethacrylate,PMMA)、前述任一者之表面改質物、前述任兩者之組合、或前述任兩者以上之組合。 The high stability quantum dot fiber according to claim 7, wherein the polar core is a spherical core or a strip core; and the polar core can be made of any of the following: cerium oxide (Silica, SiO 2 ), polymethylmethacrylate (PMMA), a surface modification of any of the above, a combination of any two of the above, or a combination of any two or more of the foregoing. 一種防偽織物,係包括:一主體;以及一防偽圖案,係設置於該主體之上,並由複數條高穩定性量子點纖維所織成;其中,每一條高穩定性量子點纖維係包括:一聚合物鞘; 複數個量子點,係摻雜或包覆於該聚合物鞘之中;一鞘保護膜,係包覆該聚合物鞘;以及複數親水性奈米粒子,係混摻於該鞘保護膜之內;其中,該親水性奈米粒子之製造材料可為下列任一者:二氧化矽(Silica,SiO2)粒子、二氧化鈦(Titania,TiO2)粒子、甲基乙烯基醚-馬來酸酐共聚物單烷基酯、聚乙烯吡咯烷酮(polyvinyl pyrrolidone,PVP)、或聚丙烯酸鹽類。 A security fabric comprising: a body; and a security pattern disposed on the body and woven by a plurality of high stability quantum dot fibers; wherein each high stability quantum dot fiber system comprises: a polymer sheath; a plurality of quantum dots doped or coated in the polymer sheath; a sheath protective film covering the polymer sheath; and a plurality of hydrophilic nano particles mixed in the polymer sheath Within the sheath protective film; wherein the hydrophilic nanoparticle can be made of any of the following: cerium oxide (Silica, SiO 2 ) particles, titanium dioxide (Titania, TiO 2 ) particles, methyl vinyl ether - Maleic anhydride copolymer monoalkyl ester, polyvinyl pyrrolidone (PVP), or polyacrylate. 如申請專利範圍第10項所述之防偽織物,其中,該主體可以是下列任一種:由複數條纖維織成的一織物基底、一紙製基底、或一硬質基底。 The security fabric of claim 10, wherein the body can be any one of: a fabric substrate woven from a plurality of fibers, a paper substrate, or a rigid substrate. 如申請專利範圍第10項所述之防偽織物,其中,該防偽圖案可為下列任一者:量子點之螢光顏色、量子點之螢光波長、量子點之螢光強度、圖形、文字、字母、數字、一維條碼(1D barcode)、二維條碼(2D barcode)、漢信碼(Chinese-sensible code)、QR碼、矩陣條碼(Maxicode)、上述任兩者之組合、或上述任兩者以上之組合。 The anti-counterfeiting fabric of claim 10, wherein the anti-counterfeiting pattern can be any one of the following: a fluorescent color of a quantum dot, a fluorescent wavelength of a quantum dot, a fluorescent intensity of a quantum dot, a graphic, a text, Letters, numbers, 1D barcodes, 2D barcodes, Chinese-sensible codes, QR codes, matrix codes (Maxicode), combinations of the two, or both The combination of the above. 如申請專利範圍第10項所述之防偽織物,其中,該聚合物鞘的製造材料可為下列任一種:聚酯(Polyester,PET)、聚氨酯(Polyurethane,PU)、聚氯乙烯(Poly(vinyl chloride),PVC)、聚丙烯(Poly propylene,PP)、或聚醯胺(Polyamide,PA)。 The anti-counterfeiting fabric of claim 10, wherein the polymer sheath is made of any of the following materials: polyester (Polyester, PET), polyurethane (Polyurethane, PU), polyvinyl chloride (Poly (vinyl) Chloride), PVC), Polypropylene (PP), or Polyamide (PA). 如申請專利範圍第10項所述之防偽織物,其中,該量子點可為下列任一者:II-VI族量子點、III-V族量子點、具有殼-核結構之II-VI族量子點、具有殼-核結構之III-V族量子點、具有合金結構之非球形II-VI量子點、上述任兩者之組合、或上述任兩者以上之組合。 The anti-counterfeiting fabric of claim 10, wherein the quantum dot can be any of the following: a II-VI quantum dot, a III-V quantum dot, a II-VI quantum having a shell-core structure; a point, a III-V group quantum dot having a shell-core structure, an aspherical II-VI quantum dot having an alloy structure, a combination of any two of the above, or a combination of any two or more of the above. 如申請專利範圍第10項所述之防偽織物,其中,該量子點為一具有合金結構的非球形量子點,係於結構上包括:一化合物核,係由化學式M1A1所表示;一內殼層,係圍繞該化合物核,並由化學式M1xM21-xA1yA21-y所表示;以及一多足結構外殼層,係圍繞該內殼層,係由化學式M1A2或M2A2所表示;其中:y係沿著自該化合物核的表面朝向該內殼層的表面的一第一方向逐漸降低,並且0<x<1且0<y<1;所述多足結構外殼層有一基部及複數個突起部,且該複數個突起部係彼此間隔並自該基部往遠離該內殼層的一第二方向延伸;M1與M2可為下列任一種材料:Zn、Sn、Pb、Cd、In、Ga、Ge、Mn、Co、Fe、Al、Mg、Ca、Sr、Ba、Ni、Ag、Ti、或Cu;A1與A2皆為下列任一種材料:Se、S、Te、P、As、N、I、或O。 The anti-counterfeiting fabric of claim 10, wherein the quantum dot is an aspherical quantum dot having an alloy structure, the structure comprising: a compound core represented by a chemical formula M1A1; and an inner shell layer , surrounding the core of the compound, and represented by the chemical formula M1 x M2 1-x A1 y A2 1-y ; and a multi-legged outer shell layer surrounding the inner shell layer, represented by the chemical formula M1A2 or M2A2; : y is gradually decreased along a first direction from the surface of the compound core toward the surface of the inner shell layer, and 0 < x < 1 and 0 < y <1; the multi-legged outer shell layer has a base and a plurality a plurality of protrusions, and the plurality of protrusions are spaced apart from each other and extend from the base in a second direction away from the inner shell layer; M1 and M2 may be any of the following materials: Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti, or Cu; both A1 and A2 are any of the following materials: Se, S, Te, P, As, N , I, or O. 如申請專利範圍第10項所述之防偽織物,其中,該鞘保護膜係由具低玻璃轉換溫度的一丙烯酸聚合物單體製成。 The security fabric of claim 10, wherein the sheath protective film is made of an acrylic polymer monomer having a low glass transition temperature. 如申請專利範圍第10項所述之防偽織物,係更包括用以作為該複數個量子點之一擔體的至少一極性芯;並且,該極性芯為一球狀芯或一條狀芯。 The anti-counterfeiting fabric of claim 10, further comprising at least one polar core as a carrier of the plurality of quantum dots; and the polar core is a spherical core or a strip core. 如申請專利範圍第10項所述之防偽織物,係更包括一耐候性層,係覆於該鞘保護膜之上;其中,該耐候性層之製造材料可為下列任一者:氟素聚合物或氧化物。 The anti-counterfeiting fabric of claim 10, further comprising a weather-resistant layer overlying the sheath protective film; wherein the weather-resistant layer can be manufactured by any of the following: fluorination polymerization Or an oxide.
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CN101824667A (en) * 2008-09-08 2010-09-08 蒂姆·保罗·麦钱特 Multicomponent taggant fibers and method
CN105121742A (en) * 2013-04-08 2015-12-02 联邦印刷有限公司 Multi-luminescent security element and value or security product containing said security element

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CN111339796A (en) * 2018-12-19 2020-06-26 陈学仕 Anti-counterfeiting security method and device using quantum dots
CN111339796B (en) * 2018-12-19 2023-05-09 陈学仕 Anti-fake safety method and device using quantum dot

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