TWI626575B - In-cell organic light-emitting diode display touch panel and manufacturing method thereof - Google Patents

Abstract

The present invention relates to an in-cell touch OLED panel and a method of fabricating the same, the in-cell touch OLED panel includes a touch electrode layer and at least one pixel, wherein the pixel includes an anode a layer, a first insulating layer, a second insulating layer, a third insulating layer, a cathode layer and a luminescent material layer. The anode layer is disposed on a transparent substrate. The first and second insulating layers are disposed on the anode layer and have a first pit and a second pit. The first pit includes a hole injection layer and a hole transport layer. The hole injection layer is disposed on the anode layer. The hole transport layer is disposed on the hole injection layer. The second pit includes a cathode layer, an electron injection layer, and an electron transport layer. The cathode layer is disposed on the bottom of the second pit. The electron injection layer is disposed on the cathode layer. An electron transport layer is disposed on the electron injection layer. The luminescent material layer is disposed on the hole transport layer, the third insulating layer, and the electron transport layer. The touch electrode layer is disposed between the second and third insulating layers for performing touch detection.

Description

In-cell touch organic light-emitting diode panel and manufacturing method thereof

The present invention relates to an organic light emitting diode technology, and more particularly to an in-cell touch organic light emitting diode panel and a method of fabricating the same.

In general, an organic light-emitting diode (OLED) element in which an organic material layer is vapor-deposited inside is vertically stacked. As shown in Fig. 1, it is a structural diagram of a prior art organic light emitting diode element. The organic light emitting diode device includes a glass substrate 100, an anode layer 101, a hole injection layer 102, a hole transport layer 103, an organic light emitting material layer 104, an electron transport layer 105 and an electron injection layer 106, and A cathode layer 107. The thickness of these layers is also indicated on Figure 1.

In this prior art, the following disadvantages exist:

(1) Because all organic materials are quite thin, about 1000~2000Å, the anode and cathode are easily short-circuited, resulting in a defect in the organic light-emitting diode display, abnormal high current and reduced production yield. And other issues.

(2) If the Bottom Emission structure is used, the aperture ratio of the glass substrate which is limited by the Thin Film Transistor (TFT) is low, and there is a problem of insufficient brightness.

(3) If the top Emission must be found, the material of the cathode must have high transparency and high conductivity. Moreover, the cathode material is generally metal. If it is made too thin, the impedance is too high, and if it is too thick, the luminous efficiency is not high.

In addition, the conventional organic light-emitting diode has only an on-cell organic light-emitting diode touch display panel in the process due to the limitation of the process. It is not possible to create an in-cell (In-Cell) organic light-emitting diode touch display panel. Please refer to Figure 1. The top of the structure is the cathode. The cathode is usually a metal electrode. To use this layer of metal as a touch-sensing electrode (Touch Sensor), you must make a touch-connected voltage electrode as shown in Figure 2. The shape of 201. FIG. 2 is a schematic diagram of a touch-connected voltage electrode of a prior art in-cell touch panel. The touch common voltage electrode 201 is generally divided into a plurality of rectangles, each of which has a corresponding wire connection. However, in order to make such a shape for a metal, it is necessary to use an exposure, development, and etching process. However, the organic material disposed under the cathode is afraid of encountering water and being resistant to high temperatures, which makes it impossible to divide the metal electrode and arrange the wires.

It is an object of the present invention to provide an in-line type The touch-sensitive organic light-emitting diode panel and the manufacturing method thereof are used for changing the structure of the existing organic light-emitting diode, achieving high luminous efficiency, improving production yield, and fabricating an in-line type on the organic light-emitting diode panel ( In-Cell) touch.

In view of this, the present invention provides an in-cell touch organic light emitting diode panel. The in-cell OLED panel includes at least one pixel and a touch electrode layer. The pixel includes an anode layer, a first insulating layer, a cathode layer, a second insulating layer, a first pit, a second pit, a third insulating layer, a hole injection layer, and a hole a transport layer, an electron injection layer, an electron transport layer, and a layer of luminescent material. The anode layer is disposed on a transparent substrate. The first insulating layer is disposed on the anode layer. The cathode layer is disposed on the first insulating layer. The second insulating layer is disposed on the anode layer. The third insulating layer is disposed on the second insulating layer and covers the touch electrode layer. The touch electrode layer is disposed between the second insulating layer and the third insulating layer for performing touch detection. The first recess penetrates through the first insulating layer, the second insulating layer, and the third insulating layer to expose the anode layer. The second pit penetrates the second insulating layer and the third insulating layer to expose the cathode layer. The hole injection layer is disposed in the first pit and disposed on the anode layer. The hole transport layer is disposed in the first pit and disposed on the hole injection layer. The electron injection layer is disposed in the second pit and disposed on the cathode layer. The electron transport layer is disposed in the second pit and disposed on the electron injection layer. The luminescent material layer is disposed on the hole transport layer, the third insulating layer, and the electron transport layer.

According to the in-cell touch organic light-emitting diode panel of the preferred embodiment of the present invention, the pixel further includes a reference voltage. a layer, the reference voltage layer is disposed between the first pit and the second pit, wherein the cathode layer, the anode layer and the reference voltage layer constitute a three-terminal organic light emitting diode. In addition, in a preferred embodiment, the pixel further includes a thin film transistor and a capacitor. The thin film transistor includes a gate, a first source drain, and a second source drain. The gate of the thin film transistor is coupled to a scan line, and the first source drain of the thin film transistor is coupled to a data line. The second source drain of the thin film transistor is coupled to the reference voltage layer. The capacitor includes a first end and a second end, wherein the first end of the capacitor is coupled to the second source drain of the thin film transistor, and the second end of the capacitor is coupled to a common voltage. Additionally, in a preferred embodiment, the material of the reference voltage layer is a metal conductor. Moreover, in a preferred embodiment, the voltage of the reference voltage layer is used to control the magnitude of a current flowing from the anode layer to the cathode layer through the layer of luminescent material and the magnitude of the current flowing through the layer of luminescent material.

The present invention further provides a method for manufacturing an in-cell touch organic light emitting diode panel, wherein the method for manufacturing the in-cell touch organic light emitting diode panel comprises forming at least one pixel on a transparent substrate, wherein the manufacturing method The step of the pixel includes: performing a sputtering process on a glass substrate to generate an anode layer; disposing a first insulating layer on the anode layer; and disposing a cathode layer on the first insulating layer; a second insulating layer is disposed on the insulating layer; a touch electrode layer is disposed on the second insulating layer; a third insulating layer is disposed on the second insulating layer; and the first insulating layer and the second insulating layer are disposed The third insulating layer is etched to generate a first pit and a second pit respectively exposing the anode layer and the cathode layer; and depositing a hole injection layer in the first pit, wherein the hole injection layer Configured in Yang On the pole layer; depositing a hole transport layer on the hole injection layer; depositing an electron injection layer on the cathode layer; depositing an electron transport layer on the electron injection layer; and transporting the layer in the hole, third A layer of luminescent material is evaporated on the insulating layer and the electron transport layer.

The method for manufacturing an in-cell touch-sensitive organic light-emitting diode panel according to the preferred embodiment of the present invention includes: before the third insulating layer is disposed on the second insulating layer, the step of: touching the touch electrode In the layer, the electrode portion disposed between the anode layer and the cathode layer is subjected to a division process such that the metal disposed between the anode layer and the cathode layer serves as a reference voltage layer, and the remaining portion serves as a touch electrode, wherein The voltage layer is disposed between the first pit and the second pit.

A method for manufacturing an in-cell touch organic light-emitting diode panel according to a preferred embodiment of the present invention further includes the steps of: disposing an amorphous germanium on a glass substrate; converting the amorphous germanium into a polycrystalline germanium a gate oxide layer is disposed on the polysilicon layer; and a gate electrode is disposed on the gate oxide layer to form a thin film transistor, and a first capacitor electrode is disposed, wherein the anode layer is disposed on the gate oxide layer on. Furthermore, in another preferred embodiment, the manufacturing method of the in-cell touch organic light-emitting diode panel further includes the following steps: a first source drain of the polysilicon, a second source drain of the polysilicon, and a first a capacitor window and an anode layer are respectively provided with a via window; a dielectric layer is disposed on the via window on the anode layer; a common voltage is disposed on the via window on the capacitor electrode; and the first capacitor electrode is disposed on the first capacitor electrode And disposing a second capacitor electrode on the via window on the second source drain of the polysilicon; and on the via window on the first source drain of the polysilicon Set a data line.

The spirit of the present invention is to change the structure of the pixel of the organic light-emitting diode panel to change the organic light-emitting diode pixel of the original vertical stacking process to a planar process, and embed a layer of conductor between the insulating layers of the pixel. As the touch electrode layer, the in-cell touch organic light emitting diode display panel is completed without additional touch elements. Therefore, the organic light emitting diode display panel can also have a touch function and a lighter and thinner effect without adding additional cost.

The above and other objects, features and advantages of the present invention will become more <RTIgt;

100, 30‧‧‧ Transparent substrate

101, 300, 601, 803 ‧ ‧ anode layer

102, 305, 609‧‧‧ hole injection layer

103, 306, 610‧‧‧ hole transport layer

104, 310, 613‧‧‧ layers of organic light-emitting materials

105, 309, 612‧‧‧ electron transport layer

106, 308, 611‧‧‧ electron injection layer

107, 307, 603, 808‧‧‧ cathode layer

201‧‧‧Common voltage electrode

301, 602, 806‧‧‧ first insulation

302, 604, 814‧‧‧ second insulation layer

303, 606, 819‧‧‧ third insulation layer

304, 605, 818‧‧‧ touch electrode layer

311, 607, 820‧‧‧ first pit

312, 608, 821‧‧‧ second pit

400, 817‧‧‧ reference voltage layer

S601~S612, S701S801~S813‧‧‧ Process steps for making embedded touch organic light-emitting diode panel pixels

501‧‧‧film transistor

503‧‧‧ Capacitance

502‧‧‧Organic LEDs

51‧‧‧Anode

52‧‧‧ cathode

53‧‧‧reference voltage pole

MSK1, MSK2‧‧‧ metal mask

801‧‧‧Amorphous

802‧‧‧ Thin film oxide layer

804‧‧‧gate electrode

805‧‧‧first electrode

807, 815‧‧ ‧ through window

809‧‧‧second electrode

810‧‧‧ source line

811‧‧‧Power voltage line

812‧‧‧Common voltage line

813‧‧‧reference voltage line

816‧‧‧ third metal layer

FIG. 1 is a structural diagram of a prior art organic light emitting diode element.

FIG. 2 is a schematic diagram of a common voltage electrode of a prior art in-cell touch panel.

FIG. 3 is a structural diagram of a pixel of an in-cell touch organic light emitting diode panel according to a preferred embodiment of the present invention.

FIG. 4 is a structural diagram of a pixel of an organic light emitting diode panel according to a preferred embodiment of the present invention.

FIG. 5 is an equivalent circuit diagram of a pixel of an organic light emitting diode panel according to a preferred embodiment of the present invention.

Figure 6 is a diagram showing a first embodiment of the present invention. 4 is a flow chart of a method for fabricating pixels of an organic light emitting diode panel.

FIG. 6A is a schematic diagram showing a step S601 of a method for fabricating a pixel of an organic light emitting diode panel.

FIG. 6B is a schematic diagram showing the step S602 of the method for fabricating the pixels of the organic light emitting diode panel.

FIG. 6C is a schematic diagram showing the step S603 of the method for fabricating the pixels of the organic light emitting diode panel.

FIG. 6D is a schematic diagram showing the step S604 of the method for fabricating the pixels of the organic light emitting diode panel.

FIG. 6E(1) is a schematic diagram showing the step S605 of the method for fabricating the pixels of the organic light emitting diode panel.

FIG. 6E(2) is a schematic diagram showing the step S605 of the method for fabricating the pixels of the organic light emitting diode panel.

FIG. 6F is a schematic diagram showing the step S606 of the method for fabricating the pixels of the organic light emitting diode panel.

FIG. 6G is a schematic diagram showing the step S607 of the method for fabricating the pixels of the organic light emitting diode panel.

FIG. 6H is a schematic diagram showing the step S608 of the method for fabricating the pixels of the organic light emitting diode panel.

FIG. 6I is a schematic diagram showing a step S609 of a method for fabricating a pixel of an organic light emitting diode panel.

FIG. 6J is a schematic diagram showing a step S610 of a method for fabricating a pixel of an organic light emitting diode panel.

Figure 6K is a diagram showing an organic light emitting diode panel A schematic diagram of step S611 of the method of fabricating a pixel.

FIG. 6L is a schematic diagram showing the step S612 of the method for fabricating the pixels of the organic light emitting diode panel.

FIG. 7 is a simplified flow chart showing a method of fabricating a pixel of an organic light emitting diode panel.

FIG. 7A is a schematic diagram showing a step S701 of a method for fabricating a pixel of an organic light emitting diode panel.

FIG. 8 is a flow chart showing a method of fabricating a pixel of an in-cell touch organic light emitting diode panel according to a fifth embodiment of the present invention.

FIG. 8A is a plan view and a cross-sectional view showing a step S801 of a method of fabricating a pixel of an organic light emitting diode panel.

FIG. 8B is a plan view and a cross-sectional view showing a step S803 of the method for fabricating a pixel of the organic light emitting diode panel.

FIG. 8C is a plan view and a cross-sectional view showing a step S804 of a method of fabricating a pixel of an organic light emitting diode panel.

FIG. 8D is a plan view and a cross-sectional view showing a step S805 of a method for fabricating a pixel of an organic light emitting diode panel.

FIG. 8E is a plan view and a cross-sectional view showing a step S806 of a method of fabricating a pixel of an organic light emitting diode panel.

FIG. 8F is a plan view and a cross-sectional view showing a step S807 of a method of fabricating a pixel of an organic light emitting diode panel.

FIG. 8G is a plan view and a cross-sectional view showing a step S808 of a method of fabricating a pixel of an organic light emitting diode panel.

FIG. 8H is a plan view and a cross-sectional view showing a step S809 of a method of fabricating a pixel of an organic light emitting diode panel.

FIG. 8I is a plan view and a cross-sectional view showing a step S810 of a method for fabricating a pixel of an organic light emitting diode panel.

FIG. 8J is a plan view and a cross-sectional view showing a step S811 of a method of fabricating a pixel of an organic light emitting diode panel.

FIG. 8K is a plan view and a cross-sectional view showing a step S812 of a method of fabricating a pixel of an organic light emitting diode panel.

8L is a plan view and a cross-sectional view showing a step S813 of a method of fabricating a pixel of an organic light emitting diode panel.

In the scope of the embodiments and claims, spatially relative terms such as "under", "below", "lower", "above", "upper" and the like may be used herein for convenience of description. The correspondence of one element or feature to another element(s) or feature(s) is illustrated in the figures. It will be understood by those of ordinary skill in the art that the spatially relative terms are intended to encompass different orientations of the device in use or operation. For example, elements or features that are described as "lower" or "lower" will be &quot;below&quot; Orientation. If the device can be additionally positioned (rotated 90 degrees or at other orientations), the spatially relative terms described above are used herein to provide a corresponding interpretation of the spatial relative description used.

FIG. 3 is a structural diagram of a pixel of an in-cell touch organic light emitting diode panel according to a preferred embodiment of the present invention. As shown, the organic material layers of this pixel are configured in a non-vertically stacked manner. The pixel includes an anode layer 300, a first insulating layer 301, a second insulating layer 302, a third insulating layer 303, a touch electrode layer 304, and a Hole Injection Layer (HIL) 305. a hole transport layer (HTL) 306, a cathode layer 307, an electron injection layer (EIL) 308, an electron transport layer (ETL) 309, and an organic light-emitting material layer (Emission Layer, EML) 310. The anode layer 300 and the cathode layer 307 of this pixel are arranged in a coplanar manner.

The anode layer 300 is disposed on a transparent substrate 30. The first insulating layer 301 is disposed on the anode layer 300, the cathode layer 307 is disposed on the first insulating layer 301, and the second insulating layer 302 is disposed on the first insulating layer 301 and the cathode layer 307. The touch electrode layer 304 is disposed on the second insulating layer 302. The third insulating layer 303 is disposed on the touch electrode layer 304. The first insulating layer 301, the second insulating layer 302 and the third insulating layer 303 have a first recess 311 and a second recess 312. Further, a hole injection layer 305 and a hole transport layer 306 are formed on the anode layer 300 in the first pit 311. In the second pit 312, from bottom to top are a cathode layer 307, an electron injection layer 308, and an electron transport layer 309, respectively. Further, an organic light-emitting material layer 310 is disposed on the third insulating layer 303, the first pit 311, and the second pit 312. The transparent substrate 30 may be a hard glass substrate or a soft plastic substrate.

It can be seen from this embodiment that this technique achieves a top emission illumination mode by arranging the luminescent material layer on a plane. In addition, since the touch electrode layer 304 is disposed between the third insulating layer 303 and the second insulating layer 302, and the exposure, development, and etching processes for processing the touch electrode layer 304 can be performed before the organic material layer is formed, The organic material layer will not be damaged, and the detailed production process will be detailed later.

In a preferred embodiment, the touch electrode layer can be driven by using a self-capacitance sensing method to measure the amount of capacitance change between the external object and the touch electrode layer to determine the touch position of the external object. Alternatively, the mutual sensing layer (Mutual-capacitance) sensing method is used to drive the touch layer, and the amount of capacitance change between the touch electrode layers is measured to determine the touch position of the external object.

FIG. 4 is a structural diagram of a pixel of an in-cell touch organic light emitting diode panel according to a preferred embodiment of the present invention. In this embodiment, a reference voltage layer 400 is additionally disposed under the organic light emitting material layer 310. This reference voltage layer 400 is used as a reference electrode. When the pixel is controlled, a reference voltage Vref is additionally applied to the reference voltage layer 400. This reference voltage Vref will cause the organic light-emitting material layer 310 of the pixel to generate more minority carrier charges. Therefore, the organic light-emitting material layer 310 is caused. The electrons and holes in the electrons are more easily combined to produce photons, so the lower anode-to-cathode voltage can be used to make the pixels emit light. At the same time, the luminous efficiency of the pixel is also improved. It can be understood that the embodiment in FIG. 4 may be a three-terminal organic light emitting diode panel pixel, and the embodiment of FIG. 3 may have a two-terminal organic light emitting diode. Body panel pixels.

In addition, the reference voltage layer 400 and the touch electrode layer 304 are disposed on the same layer. In other words, the reference voltage layer 400 and the touch electrode layer 304 can be fabricated using the same process. When the touch electrode layer 304 is formed, the electrode disposed between the first pit 311 and the second pit 312 is divided into the reference voltage layer 400 by the exposure and development etching process, and the rest is used as the touch electrode. Layer 304. Thereby, a three-terminal organic light-emitting diode can be obtained and a panel with an in-cell touch can be simultaneously provided. The three-terminal organic light-emitting diode can also effectively solve the collapse phenomenon of the organic light-emitting material layer due to excessive current concentration.

FIG. 5 is an equivalent circuit diagram of a pixel of an organic light emitting diode panel according to a preferred embodiment of the present invention. The equivalent circuit of this pixel includes a thin film transistor 501, a capacitor 503, and an organic light emitting diode pixel 502 of an embodiment of the present invention. In this embodiment, the organic light emitting diode pixel 502 includes an anode 51, a cathode 52, and a reference voltage electrode 53.

It can be seen from the above embodiment that only one thin film transistor 501 is needed for each pixel, and at least two thin film transistors are required for the pixels of the conventional organic light emitting diode panel, so the organic light emitting of the three-terminal element Polar body pixels can achieve the same display effect with fewer external components. In addition, the anode layer 300 and the reference voltage layer 400 may be, for example, Indium Tin Oxide (ITO), fluorine-doped tin oxide (F2:SnO2, FTO), or aluminum-doped zinc oxide (ZnO:Al). , AZO), gallium-doped zinc oxide (ZnO: Ga, GZO), etc. The invention is not limited thereto. In addition, it is worth mentioning that the anode layer 300, the reference voltage layer 400, and the touch electrode layer 304 may use a non-transparent conductive material such as a metal. Therefore, the present invention is more flexible in the use of materials.

The pixels of the above-mentioned organic light-emitting diode panel are generally exemplified by single-wavelength light, such as red light, green light or blue light. In order to produce mixed light, for example, yellow light, violet light, white light, or the like, an organic light-emitting material of different colors may be vapor-deposited while vapor-depositing the organic light-emitting material layer to form an effect of causing the organic light-emitting diode to emit mixed light.

FIG. 6 is a flow chart of a method for fabricating a pixel of an in-cell touch organic light emitting diode panel according to a third embodiment of the present invention. The manufacturing method includes the following steps:

Step S600: Start.

Step S601: An anode layer 601 is disposed on a transparent substrate as shown in FIG. 6A. Step S602: On the anode layer 601, a first insulating layer 602 is disposed as shown in FIG. 6B. Step S603: On the first insulating layer, a cathode layer 603 is disposed as shown in FIG. 6C. Step S604: A second insulating layer 604 is disposed on the first insulating layer 602 and the cathode layer 603, as shown in FIG. 6D.

Step S605: On the second insulating layer 604, a touch electrode layer 605 is disposed, as shown in FIG. 6E(1). The touch electrode layer 605 may be a transparent conductive material such as indium tin oxide or a deposited layer of a suitable metal. Then, the touch electrode layer 605 is formed into a plurality of common voltage electrode blocks in the in-cell touch panel of FIG. 2 through a process such as exposure development etching, as shown in FIG. 6E(2).

Step S606: A third insulating layer 606 is disposed on the second insulating layer 604 and the touch electrode layer, as shown in FIG. 6F.

Step S607: etching the first insulating layer 602, the second insulating layer 604 and the third insulating layer 606 to generate a first pit 607 and a second pit 608, as shown in FIG. 6G. In this figure, the first pit 607 and the second pit 608 are formed by etching. In addition, since the bottom of the second pit 608 has a cathode layer 603, the cathode layer 603 is generally made of a metal material, so Will be etched.

Step S608: Evaporating a hole injection layer 609 in the first pit 607 as shown in FIG. 6H. In this figure, during vapor deposition, the material of the hole injection layer is accurately vapor-deposited into the first pit 607 through the metal mask MSK1.

Step S609: depositing a hole transport layer 610 on the hole injection layer as shown in FIG. 6I. In this step, during vapor deposition, the material of the hole transport layer is accurately vapor-deposited into the first pit 607 through the metal mask MSK1, and stacked on the hole injection layer 609.

Step S610: An electron injection layer 611 is deposited on the cathode layer 603 as shown in FIG. 6J. At this step, the opening of the metal mask MSK1 is translated onto the second pit 608, after which the electron injecting layer 611 is vapor-deposited, and the material of the electron injecting layer is stacked on the cathode layer 603.

Step S611: An electron transport layer 612 is evaporated on the electron injection layer 611 as shown in FIG. 6K. In this step, the electron transport layer 612 is evaporated, and the material of the electron transport layer 612 is stacked on the electron injection layer 611. Generally, the electron injection layer 611 is very thin. This pattern is only For the schematic, it is not a true ratio.

Step S612: depositing an organic light-emitting material layer 613 on the third insulating layer 606, and the organic light-emitting material layer 613 may be covered on the first pit 607 and the second pit 608, as shown in FIG. 6L. At this step, the organic light-emitting material layer 613 is also formed by vapor deposition, so it is necessary to replace the metal mask MSK2. In general, the organic light-emitting material layer 613 is an organic light-emitting material of red, green or blue as an example. If it is changed to another color, it can be vapor-deposited by mixing the above-mentioned red, green or blue organic light-emitting material.

In the above embodiment, the reference voltage electrode may be additionally configured in the pixel of the in-cell touch OLED panel to be converted into an organic light-emitting diode pixel having three-end control. FIG. 7 is a flow chart showing a method for fabricating a pixel of an in-cell touch organic light-emitting diode panel according to a fourth embodiment of the present invention. The manufacturing method includes the following steps:

Step S701: Perform a dividing process, and cut the touch electrode layer 605 disposed between the subsequent first pit and the second pit as a reference voltage layer 701, as shown in FIG. 7A. Thereby, a three-terminal organic light emitting diode pixel is produced. It can be understood that this dividing step can simultaneously form the touch electrode and the reference voltage layer 701. In other embodiments, the reference voltage layer 701 may not be formed between the first pit and the second pit, or the reference voltage may be suspended or not supplied to the reference voltage layer 701 to keep the organic light emitting diode pixel The aspect of the two-terminal component.

Figure 8 is a fifth diagram of a preferred embodiment of the present invention A flow chart of a method for fabricating a pixel of an in-cell touch organic light-emitting diode panel. In this embodiment, the pixels of the in-cell touch organic light emitting diode panel may be disposed on a thin film transistor (TFT) substrate. Please also refer to the top view and section view of each step shown in Figures 8A-8L. This production method includes the following steps:

Step S800: Start.

Step S801: disposing an amorphous silicon (a-Si) on a transparent substrate. Referring to Figure 8A, the amorphous germanium 801 is mainly used to fabricate a thin film transistor. In general, if an example of a soft plastic transparent substrate can be a lower annealing temperature, the entire deposition process can be performed at relatively low temperatures, such as chemical vapor deposition, physical vapor deposition (e.g., sputtering).

Step S802: performing a crystal conversion process to convert the amorphous germanium into poly-silicon (p-Si). Generally, this step uses an Excimer-Laser Annealing (ELA) method to convert the amorphous germanium into a polycrystalline germanium structure. In other embodiments, solid phase crystallization, metal induced crystallization, and the like may also be used, and the present invention is not limited thereto.

Step S803: A thin film oxide layer 802 is disposed, which is mainly used to form an oxide layer between the gate and the channel of the thin film transistor, as shown in FIG. 8B.

Step S804: Configuring a first metal layer as shown in FIG. 8C. In this embodiment, the first metal layer includes an anode layer 803, a gate electrode 804, and a first electrode 805 of the capacitor 703. Step S805: A first insulating layer 806 is disposed as shown in FIG. 8D.

Step S806: Perform a via window (VIA) 1007 configuration as shown in FIG. 8E. For example, the source needs to be connected to the data line, so a via window needs to be configured to connect to the upper metal (not yet configured). Similarly, the drain needs to be connected to the second electrode of capacitor 703 (not yet configured). Furthermore, the first electrode 805 of the capacitor 703 needs to be connected to a common voltage (not yet configured). In addition, the anode layer 803 needs to be connected to a power supply voltage (not yet configured). Therefore, all of the above nodes need to configure the via 807.

Step S807: Perform a second metal layer configuration as shown in FIG. 8F. In this embodiment, the second metal layer includes a cathode layer 808, a second electrode 809 of the capacitor 703, a source line 810, a power supply voltage line 811, a common voltage line 812, and a reference voltage line 813.

Step S808: Configuring a second insulating layer 814 as shown in FIG. 8G. Step S809: The via window 815 is configured as shown in FIG. 8H. Step S810: performing a third metal layer 816 configuration, which can be mainly used as the touch electrode layer and the reference voltage layer as shown in FIG. 8I.

Step S811: dividing the third metal layer 816 to obtain a separated reference voltage layer 817 and a touch electrode layer 818. Referring to FIG. 8J, the reference voltage layer 817 and the touch electrode layer 818 are separated by processes such as exposure, development, and etching.

Step S812: Configuring a third insulating layer 819 covering the touch electrode 818 and the reference electrode layer 817 as shown in FIG. 8K.

Step S813: etching the first insulating layer 806, the second insulating layer 814 and the third insulating layer 819 to generate a first pit 820. And a second pit 821, as shown in Fig. 8L. The subsequent steps are the same as steps S608 to S612 described above, and therefore will not be described again. Since the steps are all performed before the evaporation of the organic material layer, the embodiment of the present invention can avoid the damage of the organic material layer by the process, and at the same time, the in-cell touch organic light emitting diode panel can also be fabricated.

8A-8L of the above embodiment are merely exemplary examples. Actually, when manufacturing a panel, it can be changed as needed, and the top view and the cross-sectional view of the above drawings are only schematic and do not correspond to each other. For example, the second source drain of the thin film transistor may be selectively connected to the first electrode of the capacitor 503 in addition to the second electrode connected to the capacitor 503 as shown in FIG. 5, and the capacitor 503 The second electrode is coupled to the common voltage. Furthermore, the anode layer 803 and the cathode layer 808 can also be interchanged. Therefore, the process of the present invention is not limited to the above drawings.

In summary, the spirit of the present invention is to change the structure of the pixel of the organic light-emitting diode panel to change the organic light-emitting diode pixel of the original vertical stacking process to a planar process, and embed a layer between the insulating layers. The conductor, by the embedded conductor, functions as a touch electrode layer to complete the in-cell touch organic light-emitting diode display panel without additional touch elements.

In addition, since the layer conductor is disposed under the luminescent material layer, a part of the conductor layer originally belonging to the touch electrode layer can be divided, and the conductor layer disposed under the luminescent material layer can be used as a reference voltage layer. The voltage layer controls the current path on the luminescent material layer, so that the organic luminescent diode pixel can reach a control mode similar to the three-terminal component, Therefore, if the improved organic light emitting diode pixel is implemented as an active matrix panel, each pixel can reduce the use of a thin film transistor. In this way, the complexity of the process and circuit control will be greatly reduced, and the manufacturing cost will also be reduced. Furthermore, since the reference voltage layer is buried under the luminescent material layer, the luminous efficiency can be increased.

The specific embodiments of the present invention are intended to be illustrative only and not to limit the invention to the above embodiments, without departing from the spirit of the invention and the following claims. The scope of the invention and the various changes made are within the scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

Claims (16)

An in-cell touch OLED panel includes: a touch electrode layer; and at least one pixel, wherein the pixel comprises: an anode layer disposed on a transparent substrate; a first insulating layer, configured On the anode layer; a cathode layer disposed on the first insulating layer; a second insulating layer disposed on the anode layer; a third insulating layer disposed on the second insulating layer to cover the contact a control electrode layer, wherein the touch electrode layer is disposed between the second insulating layer and the third insulating layer for performing touch detection; a first pit extending through the first insulating layer, the second An insulating layer and the third insulating layer to expose the anode layer; a second recess penetrating the second insulating layer and the third insulating layer to expose the cathode layer; and a hole injection layer disposed on the first layer a pit is disposed on the anode layer; a hole transport layer disposed in the first pit and disposed on the hole injection layer; an electron injection layer disposed in the second pit And disposed on the cathode layer; an electron transport layer disposed on the The two pits, and disposed on the electron injection layer; A layer of luminescent material disposed on the third insulating layer. The in-cell touch-sensitive organic light-emitting diode panel according to the first aspect of the invention, wherein the pixel further comprises: a reference voltage layer disposed between the first pit and the second pit, Wherein, the cathode layer, the anode layer and the reference voltage layer constitute a three-terminal organic light-emitting diode. The in-cell touch organic light-emitting diode panel according to the second aspect of the invention, wherein the reference voltage layer and the touch electrode layer are disposed on the same plane. The in-cell touch-sensitive organic light-emitting diode panel of claim 2, wherein the pixel further comprises: a thin film transistor comprising a gate, a first source drain and a second source; a gate electrode, wherein a gate of the thin film transistor is coupled to a scan line, a first source drain of the thin film transistor is coupled to a data line, and a second source drain of the thin film transistor is coupled to the reference voltage layer And a capacitor, comprising a first end and a second end, wherein the first end of the capacitor is coupled to the second source drain of the thin film transistor, and the second end of the capacitor is coupled to a common voltage. In-line touch organic as described in item 2 of the patent application scope And a light emitting diode panel, wherein a voltage of the reference voltage layer controls a current flowing from the anode layer to the cathode layer through the luminescent material layer and a current path of the current flowing through the luminescent material layer. The in-cell touch organic light-emitting diode panel according to the first aspect of the invention, wherein the light-emitting material layer covers the first pit and the second pit. The in-cell touch organic light-emitting diode panel according to the first aspect of the invention, wherein the light-emitting material layer is mixed with at least two different color organic light-emitting materials. The in-cell touch OLED panel according to the first aspect of the invention, wherein the touch electrode layer detects a touch position of an external object by self-capacitance or mutual capacitance. The in-cell touch-sensitive organic light-emitting diode panel according to the first aspect of the invention, wherein a capacitance change is generated between the touch electrode layer and an external object, and the touch of the external object is determined by the amount of change. position. The in-cell touch-sensitive organic light-emitting diode panel according to the first aspect of the invention, wherein a capacitance change is generated between the touch electrode layers, and a touch position of an external object is determined. A method for manufacturing an in-cell touch OLED panel includes forming at least one pixel on a transparent substrate, wherein the step of fabricating the pixel includes: performing a sputtering process on the transparent substrate, An anode layer is disposed; a first insulating layer is disposed on the anode layer; a cathode layer is disposed on the first insulating layer; a second insulating layer is disposed on the first insulating layer; a touch electrode layer is disposed on the insulating layer; a third insulating layer is disposed on the second insulating layer; and the first insulating layer, the second insulating layer, and the third insulating layer are etched to generate a first a pit and a second pit respectively exposing the anode layer and the cathode layer; depositing a hole injection layer on the anode layer in the first pit; and depositing a vapor deposition layer on the hole injection layer a hole transport layer; an electron injection layer is deposited on the cathode layer; an electron transport layer is deposited on the electron injection layer; and a luminescent material layer is deposited on the third insulating layer. The method of manufacturing an in-cell touch organic light-emitting diode panel according to claim 11, wherein the light-emitting material layer is mixed with at least two organic light-emitting materials of different colors. The method for manufacturing an in-cell touch organic light-emitting diode panel according to claim 11, wherein the anode layer comprises a doped layer It is composed of a material of indium tin oxide. The method for manufacturing an in-cell touch-sensitive organic light-emitting diode panel according to the invention of claim 11, wherein before the disposing the third insulating layer on the second insulating layer, the method further comprises: the touch electrode layer An exposure and etch dicing process is performed to form a reference voltage layer and the touch electrode layer as a touch electrode, wherein the reference voltage layer is between the anode layer and the cathode layer. The method for fabricating an organic light-emitting diode panel according to claim 11, further comprising: disposing an amorphous germanium on the transparent substrate; converting the amorphous germanium into a polycrystalline germanium; and disposing the polycrystalline germanium on the polycrystalline germanium a gate oxide layer; and a gate electrode disposed on the gate oxide layer to form a thin film transistor, and a first capacitor electrode is disposed, wherein the anode layer is disposed on the gate oxide layer. The method for fabricating an organic light-emitting diode panel according to claim 15, further comprising: a first source drain of the polysilicon, a second source drain of the polysilicon, the first capacitor electrode, and the anode a layer window is disposed on the layer; a power line is disposed on the via window on the anode layer; and a common voltage is disposed on the via window on the capacitor electrode; Disposing a second capacitor electrode on the first capacitor electrode and the via on the second source drain of the polysilicon; and disposing a data line on the via on the first source drain of the polysilicon.