TWI616513B - Method for measuring temperature of light emitting diode chip and temperature-sensitive polymer used therein - Google Patents

Method for measuring temperature of light emitting diode chip and temperature-sensitive polymer used therein Download PDF

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TWI616513B
TWI616513B TW101133896A TW101133896A TWI616513B TW I616513 B TWI616513 B TW I616513B TW 101133896 A TW101133896 A TW 101133896A TW 101133896 A TW101133896 A TW 101133896A TW I616513 B TWI616513 B TW I616513B
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heat
temperature
light
sensitive polymer
polymer support
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TW201406923A (en
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謝雨倫
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榮創能源科技股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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  • Radiation Pyrometers (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

一種發光二極體晶片的溫度測量方法,包括以下步驟:提供高分子材料,該高分子材料包括支撐體和分散於該支撐體中的螢光分子、交聯劑、負離子基團及水分子,該螢光分子包覆於支撐體內,該螢光分子隨外部環境溫度的變化而變化;用不同波長的光源激發高分子材料並採集高分子材料在不同溫度條件下的螢光的光強值,得到光源波長、該高分子材料溫度及螢光的光強值的關聯資料庫;提供已固晶打線的發光二極體封裝結構,將高分子材料置於待測發光二極體晶片上並通電,測量該熱高分子材料的螢光光強並與資料庫對比得到發光二極體晶片溫度。 A method for measuring temperature of a light-emitting diode wafer, comprising the steps of: providing a polymer material comprising a support and fluorescent molecules, a crosslinking agent, an anion group and a water molecule dispersed in the support; The fluorescent molecules are coated in the support body, and the fluorescent molecules change according to changes in the external environment temperature; the high-frequency materials are excited by the light sources of different wavelengths, and the light intensity values of the fluorescent materials of the polymer materials under different temperature conditions are collected, Obtaining a correlation database of the wavelength of the light source, the temperature of the polymer material, and the intensity of the fluorescent light; providing a light-emitting diode package structure with a solid crystal wire, placing the polymer material on the LED to be tested and energizing The fluorescent light intensity of the thermal polymer material is measured and compared with a database to obtain a temperature of the light emitting diode wafer.

Description

發光二極體晶片的溫度測量方法及使用的熱敏高分子材 料 Temperature measuring method of light-emitting diode wafer and heat-sensitive polymer material used material

本發明涉及一種發光二極體晶片的溫度測量方法及該方法中使用的熱敏高分子材料。 The present invention relates to a method for measuring the temperature of a light-emitting diode wafer and a heat-sensitive polymer material used in the method.

發光二極體(light emitting diode,LED)作為一種高效的發光源,具有環保、省電、壽命長等諸多特點,已經被廣泛的運用於各種領域。 As a highly efficient light source, light emitting diode (LED) has many characteristics such as environmental protection, power saving and long life, and has been widely used in various fields.

發光二極體在應用到各領域中之前,需要進行封裝,以保護發光二極體晶片,從而獲得較高的發光效率及較長的使用壽命。一般的發光二極體封裝結構通常包括表面貼裝有電極的基板、設置於該基板上的反射杯、設於反射杯底部並與電極電連接的發光二極體晶片以及覆蓋該發光二極體晶片的透明封裝層。 Before being applied to various fields, the light-emitting diode needs to be packaged to protect the light-emitting diode wafer, thereby achieving high luminous efficiency and long service life. A general LED package structure generally includes a substrate with an electrode attached to the surface, a reflective cup disposed on the substrate, a light-emitting diode chip disposed at the bottom of the reflective cup and electrically connected to the electrode, and covering the light-emitting diode A transparent encapsulation layer of the wafer.

該發光二極體晶片工作時將電能轉換為光能,同時釋放出熱量,導致發光二極體晶片的溫度升高,影響發光二極體封裝結構的使用壽命。因此,測量發光二極體封裝結構中發光二極體晶片的溫度對於預測發光二極體封裝結構的使用壽命至關重要。然而,一般發光二極體封裝結構中發光二極體晶片被透明封裝層覆蓋,不能對發光二極體晶片直接進行測量。 When the LED chip is in operation, the electrical energy is converted into light energy, and at the same time, the heat is released, which causes the temperature of the LED chip to rise, which affects the service life of the LED package structure. Therefore, measuring the temperature of the light-emitting diode wafer in the light-emitting diode package structure is critical for predicting the service life of the light-emitting diode package structure. However, in a general LED package structure, the LED chip is covered by a transparent encapsulation layer, and the LED chip cannot be directly measured.

有鑒於此,有必要提供一種有效的發光二極體晶片的溫度測量方法。本發明還提供一種該方法中使用的熱敏高分子材料。 In view of this, it is necessary to provide an effective temperature measuring method for a light-emitting diode wafer. The present invention also provides a heat sensitive polymer material used in the method.

一種發光二極體晶片的溫度測量方法,包括以下步驟:提供熱敏高分子材料,該熱敏高分子材料包括熱敏性高分子支撐體和分散於該熱敏性高分子支撐體中的螢光分子、交聯劑、負離子基團及水分子, 其中該熱敏性高分子支撐體的結構為,其中R為碳原子數 為3的飽和烷基,該螢光分子的結構為,其中x 為1或2,該螢光分子包覆於該熱敏性高分子支撐體內,當外部環境溫度升高時,該熱敏性高分子支撐體隨之逐漸皺縮,進而引起包覆於該熱敏性高分子內的該螢光分子的螢光光強逐漸增強,當外部環境溫度降低時,該熱敏性高分子支撐體隨之逐漸膨脹,進而引起包覆於該熱敏性高分子內的該螢光分子的螢光光強隨之逐漸減弱,該負離子基團阻止該螢光分子與該熱敏性高分子支撐體發生交聯,該交聯劑促進該熱敏性高分子支撐體的交聯;用一定波長的光源激發所述熱敏高分子材料,並採集該熱敏高分子材料在該波長的光源、不同溫度條件下的螢光的光強值,再變換光源的波長值,重複採集該熱敏高分子材料在不同溫度條件下的螢光的光強值,從而得到光源的波長、該熱敏高分子材料的溫度及螢光 的光強值三者之間的對應函數關聯資料庫;提供已固晶打線的發光二極體封裝結構,將所述熱敏高分子材料置於待測發光二極體晶片上,使該待測發光二極體晶片通電發光,用光譜議測量該熱敏高分子材料的螢光光強,將該螢光的光強值及待測發光二極體晶片發出的光源的波長與所述資料庫中對應的螢光的光強值及波長匹配,從而得到待測發光二極體晶片的溫度。 A method for measuring a temperature of a light-emitting diode wafer, comprising the steps of: providing a heat-sensitive polymer material comprising a heat-sensitive polymer support and a fluorescent molecule dispersed in the heat-sensitive polymer support; a coupling agent, an anion group, and a water molecule, wherein the structure of the thermosensitive polymer support is Wherein R is a saturated alkyl group having 3 carbon atoms, and the structure of the fluorescent molecule is Wherein x is 1 or 2, and the fluorescent molecule is coated in the heat-sensitive polymer support body, and when the temperature of the external environment is increased, the heat-sensitive polymer support body is gradually shrunk, thereby causing the coating to have high heat sensitivity. The fluorescence intensity of the fluorescent molecule in the molecule is gradually increased, and when the temperature of the external environment is lowered, the heat-sensitive polymer support gradually expands, thereby causing the fluorescent molecule of the fluorescent molecule coated in the thermosensitive polymer. The light intensity is gradually weakened, and the negative ion group prevents the fluorescent molecule from cross-linking with the heat-sensitive polymer support, the crosslinking agent promotes crosslinking of the heat-sensitive polymer support; and the light source is excited by a light source of a certain wavelength The heat sensitive polymer material is collected, and the light intensity value of the light-sensitive polymer material at a wavelength of the light source and the different temperature conditions is collected, and the wavelength value of the light source is converted, and the heat-sensitive polymer material is repeatedly collected in different a light intensity value of the fluorescent light under temperature conditions, thereby obtaining a correlation function database between the wavelength of the light source, the temperature of the thermosensitive polymer material, and the intensity value of the fluorescent light; A light-emitting diode package structure having a solid crystal wire, the thermosensitive polymer material is placed on a light-emitting diode wafer to be tested, and the light-emitting diode chip to be tested is electrically light-emitting, and the heat sensitivity is measured by a spectroscopic method. The fluorescence intensity of the polymer material is matched by the light intensity value of the fluorescent light and the wavelength of the light source emitted from the light emitting diode chip to be detected, and the light intensity value and wavelength of the corresponding fluorescent light in the data library, thereby obtaining The temperature of the light-emitting diode wafer to be tested.

一種熱敏高分子材料,所述熱敏高分子材料包括熱敏性高分子支撐體和分散於該熱敏性高分子支撐體中的螢光分子、交聯劑、負 離子基團及水分子,其中該熱敏性高分子支撐體的結構為 其中R為碳原子數為3的飽和烷基,該螢光分子的結構為 ,其中x為1或2。 A heat-sensitive polymer material comprising a heat-sensitive polymer support and fluorescent molecules, a crosslinking agent, an anion group and a water molecule dispersed in the heat-sensitive polymer support, wherein the heat sensitive property is high The structure of the molecular support is Wherein R is a saturated alkyl group having 3 carbon atoms, and the structure of the fluorescent molecule is Where x is 1 or 2.

在本發明中,該熱敏性高分子支撐體隨外部環境溫度的升高(降低)而逐漸皺縮(膨脹),進而引起包覆於該熱敏性高分子支撐體內的該螢光分子的螢光光強的逐漸增強(減弱),利用該螢光分子的螢光光強與溫度之間的變化關係,只需要測量該熱敏高分子材料的螢光光強,就可以得出發光二極體晶片的溫度。 In the present invention, the heat-sensitive polymer support gradually shrinks (expands) as the temperature of the external environment increases (decreases), thereby causing the fluorescence intensity of the fluorescent molecule coated in the heat-sensitive polymer support body. The gradual enhancement (attenuation), by using the relationship between the fluorescence intensity of the fluorescent molecule and the temperature, it is only necessary to measure the fluorescence intensity of the thermosensitive polymer material, and the temperature of the light-emitting diode wafer can be obtained. .

100‧‧‧熱敏高分子材料 100‧‧‧Thermal polymer materials

10‧‧‧熱敏性高分子支撐體 10‧‧‧Thermal polymer support

20‧‧‧螢光分子 20‧‧‧Fluorescent molecules

30‧‧‧水分子 30‧‧‧Water molecules

40‧‧‧負離子基團 40‧‧‧negative ionic groups

50‧‧‧交聯劑 50‧‧‧crosslinking agent

60‧‧‧發光二極體封裝結構 60‧‧‧Light emitting diode package structure

61‧‧‧電極 61‧‧‧ electrodes

62‧‧‧基板 62‧‧‧Substrate

63‧‧‧反射杯 63‧‧‧Reflection Cup

64‧‧‧發光二極體晶片 64‧‧‧Light Emitter Wafer

70‧‧‧透明封裝層 70‧‧‧Transparent encapsulation layer

圖1係本發明中一種發光二極體晶片的溫度測量方法的流程圖。 1 is a flow chart showing a method of measuring the temperature of a light-emitting diode wafer in the present invention.

圖2係圖1中發光二極體晶片的溫度測量方法步驟S101中熱敏性高分子的吸熱反應示意圖。 2 is a schematic diagram showing the endothermic reaction of the thermosensitive polymer in the step S101 of the temperature measuring method of the light-emitting diode wafer of FIG. 1.

圖3係圖1中發光二極體晶片的溫度測量方法步驟S101中熱敏性高分子的放熱反應示意圖。 3 is a schematic diagram showing the exothermic reaction of the thermosensitive polymer in the step S101 of the temperature measuring method of the light-emitting diode wafer of FIG. 1.

圖4係圖1中發光二極體晶片的溫度測量方法步驟S102中熱敏高分子材料的光譜。 4 is a spectrum of a temperature sensitive polymer material in step S102 of the temperature measuring method of the light emitting diode wafer of FIG. 1.

圖5係圖4中所示光譜中溫度與螢光光強峰值的分佈圖。 Figure 5 is a graph showing the distribution of temperature and peak intensity of fluorescence in the spectrum shown in Figure 4.

圖6係圖1中發光二極體晶片的溫度測量方法步驟S103中發光二極體封裝結構的剖視圖。 6 is a cross-sectional view showing a light emitting diode package structure in step S103 of the temperature measuring method of the light emitting diode wafer of FIG. 1.

請參閱圖1,所示為本發明一實施例的發光二極體晶片的溫度測量方法的流程圖,該發光二極體晶片的溫度測量方法包括如下步驟: 步驟S101,請一併參考圖2和圖3,提供一種熱敏高分子材料100,該熱敏高分子材料100包括熱敏性高分子支撐體10和分散於該熱敏性高分子支撐體10中的螢光分子20、水分子30、負離子基團40及交聯劑50。 Referring to FIG. 1 , a flow chart of a method for measuring temperature of a light-emitting diode wafer according to an embodiment of the present invention is shown. The method for measuring temperature of the LED chip includes the following steps: In step S101, referring to FIG. 2 and FIG. 3, a heat-sensitive polymer material 100 including a heat-sensitive polymer support 10 and fluorescent light dispersed in the heat-sensitive polymer support 10 is provided. Molecule 20, water molecule 30, negative ion group 40, and crosslinker 50.

上述熱敏性高分子支撐體10的結構式為,其 中R為碳原子數為3的飽和烷基。所述飽和烷基R係異丙基、丙基、叔丁基中的一種。該熱敏性高分子支撐體10的分子鏈相互交錯呈網狀結構。 The structural formula of the heat-sensitive polymer support 10 is Wherein R is a saturated alkyl group having 3 carbon atoms. The saturated alkyl group R is one of an isopropyl group, a propyl group, and a t-butyl group. The molecular chains of the thermosensitive polymer support 10 are alternately in a network structure.

該熱敏性高分子支撐體10在不同的外部環境溫度條件下具有不同的交聯度。該熱敏性高分子支撐體10的分子間距隨著外部環境溫度的變化而變化。當外部環境溫度升高時,該熱敏性高分子支撐體10吸收外部熱量而溫度升高,該熱敏性高分子支撐體10的交聯度隨之變大,該熱敏性高分子支撐體10的分子間距隨之逐漸變小,使得該熱敏性高分子支撐體10發生皺縮。當外部環境溫度降低時,該熱敏性高分子支撐體10向外部釋放出熱量而溫度降低,該熱敏性高分子支撐體10的交聯度隨之變小,該熱敏性高分子支撐體10的分子間距隨之逐漸變大,該熱敏性高分子支撐體10發生膨脹。該熱敏性高分子支撐體10的吸熱反應和放熱反應係可逆反應。 The thermosensitive polymer support 10 has different degrees of crosslinking under different external ambient temperature conditions. The molecular spacing of the thermosensitive polymer support 10 changes as the temperature of the external environment changes. When the temperature of the external environment is increased, the heat-sensitive polymer support 10 absorbs external heat and the temperature rises, and the degree of crosslinking of the heat-sensitive polymer support 10 becomes large, and the molecular spacing of the heat-sensitive polymer support 10 varies. This gradually becomes smaller, causing the heat-sensitive polymer support 10 to shrink. When the temperature of the external environment is lowered, the heat-sensitive polymer support 10 releases heat to the outside and the temperature is lowered, and the degree of crosslinking of the heat-sensitive polymer support 10 becomes smaller, and the molecular spacing of the heat-sensitive polymer support 10 varies. As the size gradually increases, the heat-sensitive polymer support 10 expands. The endothermic reaction and the exothermic reaction of the thermosensitive polymer support 10 are reversible.

該熱敏性高分子支撐體10還存在一個最低臨界溶解溫度。 該熱敏性高分子支撐體10的最低臨界溶解溫度為32℃。當該熱敏性高分子支撐體10的溫度低於32℃時,該熱敏性高分子支撐體10的交聯較小,該熱敏性高分子支撐體10的分子間距較大,該熱敏性高分子支撐體10中親水性基團醯胺鍵與分散於該熱敏性高分子支撐體10中的水分子30存在較強的氫鍵作用,該熱敏性高分子支撐體10以親水性作用為主。反之,當該熱敏性高分子支撐體10的溫度高於32℃時,該熱敏性高分子支撐體10的交聯度變大,該熱敏性高分子支撐體10的分子間距變小,該熱敏性高分子支撐體10中親水性基團醯胺鍵與分散於該熱敏性高分子支撐體10內的水分子30之間的氫鍵作用被破壞,該熱敏性高分子支撐體10以疏水作用為主。 The heat-sensitive polymer support 10 also has a minimum critical solution temperature. The lowest critical solution temperature of the thermosensitive polymer support 10 was 32 °C. When the temperature of the heat-sensitive polymer support 10 is lower than 32° C., the heat-sensitive polymer support 10 has a small cross-linking, and the thermosensitive polymer support 10 has a large molecular pitch, and the thermosensitive polymer support 10 is in the heat-sensitive polymer support 10 . The hydrophilic group guanamine bond has a strong hydrogen bonding action with the water molecule 30 dispersed in the heat-sensitive polymer support 10, and the heat-sensitive polymer support 10 mainly has a hydrophilic action. On the other hand, when the temperature of the heat-sensitive polymer support 10 is higher than 32 ° C, the degree of crosslinking of the heat-sensitive polymer support 10 becomes large, and the molecular pitch of the heat-sensitive polymer support 10 becomes small, and the heat-sensitive polymer support The hydrogen bond between the hydrophilic group guanamine bond and the water molecule 30 dispersed in the heat-sensitive polymer support 10 in the body 10 is destroyed, and the heat-sensitive polymer support 10 mainly has a hydrophobic action.

上述螢光分子20的結構式為,其中 x為1或2。 The structural formula of the above fluorescent molecule 20 is Where x is 1 or 2.

該螢光分子20包覆於該熱敏性高分子支撐體10內。該螢光分子20的螢光光強隨著該熱敏性高分子支撐體10的間距變化而變化。 The fluorescent molecules 20 are coated in the heat-sensitive polymer support 10. The fluorescence intensity of the fluorescent molecules 20 changes as the pitch of the thermosensitive polymer support 10 changes.

該螢光分子20係一種有機螢光分子。該螢光分子20的螢光光強的強弱隨著該螢光分子20與水分子30的作用距離的長短有關。如前面所述,當外部環境溫度升高時,該熱敏性高分子支撐體10的分子間距隨之變小,該熱敏性高分子支撐體10逐漸皺縮,進而引起包覆於該熱敏性高分子支撐體10內的該螢光分子20與分散於該熱敏性高分子支撐體10中的水分子30的作用距離逐漸變短,使得該螢光分子20與水分子30的相互作用逐漸變大,該螢光分子20的螢光光強逐漸增強。反之,當外部環境溫度降低時,該熱敏性高分子支撐體10的分子間距隨之變大,該熱敏性高分子支撐體10逐漸膨脹,進而引起該螢光分子20與水分子30的作用距離逐漸變長,使得該螢光分子20與水分子30的相互作用逐漸變小,該螢光分子20的螢光光強逐漸減弱。 The fluorescent molecule 20 is an organic fluorescent molecule. The intensity of the fluorescent light of the fluorescent molecule 20 is related to the length of the distance between the fluorescent molecule 20 and the water molecule 30. As described above, when the temperature of the external environment is increased, the molecular spacing of the heat-sensitive polymer support 10 becomes smaller, and the heat-sensitive polymer support 10 is gradually shrunk, thereby causing coating on the heat-sensitive polymer support. The distance between the fluorescent molecules 20 in the 10 and the water molecules 30 dispersed in the thermosensitive polymer support 10 is gradually shortened, so that the interaction between the fluorescent molecules 20 and the water molecules 30 is gradually increased. The fluorescence intensity of the molecule 20 is gradually enhanced. On the other hand, when the temperature of the external environment is lowered, the molecular spacing of the heat-sensitive polymer support 10 becomes larger, and the heat-sensitive polymer support 10 gradually expands, thereby causing the distance between the fluorescent molecules 20 and the water molecules 30 to gradually change. The growth of the fluorescent molecules 20 and the water molecules 30 is gradually reduced, and the fluorescence intensity of the fluorescent molecules 20 is gradually weakened.

上述負離子基團40容易與該熱敏性高分子支撐體10相結合。該負離子基團40能阻止該螢光分子20與該熱敏性高分子支撐體10發生交聯。在本實施例中,該負離子基團40為磺酸根(-SO3-)。 The negative ion group 40 is easily bonded to the thermosensitive polymer support 10. The negative ion group 40 prevents the fluorescent molecule 20 from being crosslinked with the thermosensitive polymer support 10. In this embodiment, the negative ionic group 40 is a sulfonate (-SO3-).

上述交聯劑50能促進該熱敏性高分子支撐體10的分子鏈的交聯。在吸熱反應中,該交聯劑50能加快該熱敏性高分子支撐體10 的分子鏈的交聯反應速度,縮短反應時間。在本實施例中,該交聯劑50 的結構式為,該交聯劑50為亞甲基雙丙烯醯胺。 The crosslinking agent 50 can promote crosslinking of the molecular chain of the thermosensitive polymer support 10. In the endothermic reaction, the crosslinking agent 50 can accelerate the crosslinking reaction rate of the molecular chain of the thermosensitive polymer support 10 and shorten the reaction time. In this embodiment, the structural formula of the crosslinking agent 50 is The crosslinking agent 50 is methylenebis acrylamide.

所述熱敏性高分子支撐體10在一定的溫度範圍內發生上述反應,當溫度數值超出該範圍時,該熱敏性高分子支撐體10的分子間距將不產生變化,即該熱敏性高分子支撐體10對於超出範圍外的溫度變化不產生對應變化。 The heat-sensitive polymer support 10 undergoes the above reaction in a certain temperature range. When the temperature value exceeds the range, the molecular spacing of the heat-sensitive polymer support 10 does not change, that is, the heat-sensitive polymer support 10 Temperature changes outside the range do not produce a corresponding change.

該熱敏性高分子支撐體10的上述溫度範圍與分散於該熱敏性高分子支撐體10中的螢光分子20、負離子基團40及交聯劑50有關。 The temperature range of the heat-sensitive polymer support 10 is related to the fluorescent molecules 20, the negative ion groups 40, and the crosslinking agent 50 dispersed in the heat-sensitive polymer support 10.

步驟S102,用一定波長的光源(圖未示)激發該熱敏高分子材料100,並採集該熱敏高分子材料100在該波長的光源、不同溫度條件下的螢光光強峰值,再變換光源的波長值,重複採集該熱敏高分子材料100在不同溫度條件下的螢光光強峰值,從而得到光源波長、該熱敏高分子材料100的溫度及螢光光強峰值三者之間的對應函數關聯資料庫; Step S102, exciting the thermosensitive polymer material 100 with a light source of a certain wavelength (not shown), and collecting the peak value of the fluorescent light intensity of the thermosensitive polymer material 100 at a source of the wavelength and different temperature conditions, and then converting The wavelength value of the light source repeatedly collects the peak intensity of the fluorescent light of the thermosensitive polymer material 100 under different temperature conditions, thereby obtaining a wavelength between the light source, the temperature of the thermosensitive polymer material 100, and the peak value of the fluorescent light intensity. Corresponding function association database;

請一併參考圖4和圖5,舉例如該熱敏性高分子支撐體10中的飽和烷基R為異丙基,該螢光分子20的結構式(取x=2)為 ,該負離子基團40為磺酸根,該交聯劑50為亞 甲基雙丙烯醯胺。 Referring to FIG. 4 and FIG. 5 together, for example, the saturated alkyl group R in the thermosensitive polymer support 10 is an isopropyl group, and the structural formula of the fluorescent molecule 20 (taken x=2) is The negative ionic group 40 is a sulfonate group, and the crosslinking agent 50 is methylene bis acrylamide.

該熱敏性高分子支撐體10的採集溫度範圍為25℃-45℃。 用波長為456nm的藍光單色光源對該熱敏高分子材料100進行激發,並用光譜儀(圖未示)對應採集該熱敏高分子材料100在25℃、30℃、34℃、36℃、38℃、40℃以及45℃這七個不同溫度條件下的光譜,即在相同波長的光源、不同溫度條件下的該熱敏高分子材料100的光譜。 The temperature-sensitive polymer support 10 has an acquisition temperature in the range of 25 ° C to 45 ° C. The thermosensitive polymer material 100 is excited by a blue light monochromatic light source having a wavelength of 456 nm, and the thermosensitive polymer material 100 is collected by a spectrometer (not shown) at 25 ° C, 30 ° C, 34 ° C, 36 ° C, 38. The spectra at seven different temperature conditions of °C, 40 °C, and 45 °C, that is, the spectrum of the thermosensitive polymer material 100 under the same wavelength of light source and different temperature conditions.

具體見圖4,該光譜的橫坐標表示波長,該光譜的波長範圍為470nm-750nm,最小刻度值為10nm,縱坐標表示螢光光強。該光譜中的七條光譜線從下至上分別對應25℃、30℃、34℃、36℃、38℃、40℃以及45℃時該熱敏高分子材料100的光譜。該光譜中的七條光譜線的螢光光強峰值所對應的波長均為560nm。 Referring specifically to Figure 4, the abscissa of the spectrum represents the wavelength, the wavelength range of the spectrum is 470 nm - 750 nm, the minimum scale value is 10 nm, and the ordinate indicates the fluorescence intensity. The seven spectral lines in the spectrum correspond to the spectra of the thermosensitive polymer material 100 at 25 ° C, 30 ° C, 34 ° C, 36 ° C, 38 ° C, 40 ° C, and 45 ° C, respectively, from bottom to top. The peaks of the fluorescence intensity of the seven spectral lines in the spectrum correspond to wavelengths of 560 nm.

圖5為該熱敏高分子材料100在波長為456nm的光源的激發下其溫度與螢光光強峰值的對應關係圖。從圖中可以看出,該螢光光強峰值在30℃至38℃的區間內變化較快,而在30℃以下以及38℃以上該螢光光強峰值變化較慢。為了準確反映該熱敏高分子材料100在波長為456nm的光源的激發下其溫度與螢光光強峰值之間的關係,可以在30℃至38℃的區間內增加光譜的採集頻率,比如溫度每改變0.5℃就採集一次光譜。在本實施例中,該熱敏高分子材料100能分辨的最小溫度變化為0.2℃,即該熱敏高分子材料100在溫度範圍25℃-45℃內,該熱敏高分子材料100的溫度改變0.2℃都會引起該熱敏高分子材料100的螢光光強峰值的變化。 Fig. 5 is a graph showing the relationship between the temperature of the thermosensitive polymer material 100 and the peak of the fluorescence intensity under excitation of a light source having a wavelength of 456 nm. As can be seen from the figure, the peak intensity of the fluorescent light changes rapidly in the interval of 30 ° C to 38 ° C, and the peak value of the fluorescent light intensity changes slowly below 30 ° C and above 38 ° C. In order to accurately reflect the relationship between the temperature of the thermosensitive polymer material 100 and the peak of the fluorescence intensity under the excitation of a light source having a wavelength of 456 nm, the spectrum acquisition frequency, such as temperature, may be increased in the range of 30 ° C to 38 ° C. The spectrum was acquired every time 0.5 °C was changed. In this embodiment, the minimum temperature change that the thermosensitive polymer material 100 can resolve is 0.2 ° C, that is, the temperature of the thermosensitive polymer material 100 in the temperature range of 25 ° C to 45 ° C. A change of 0.2 ° C causes a change in the peak intensity of the fluorescent light of the thermosensitive polymer material 100.

容易理解地,更換不同波長的光源後重複上述步驟就可以測出不同波長的光源、不同溫度下該熱敏高分子材料100的螢光光強峰值,得到光源波長、該熱敏高分子材料100的溫度及螢光光強峰值三者之間的對應函數關聯資料庫。 It is easy to understand that after replacing the light source of different wavelengths, the above steps can be repeated to detect the fluorescence intensity peaks of the light source of different wavelengths and the temperature of the thermosensitive polymer material 100 at different temperatures, and obtain the wavelength of the light source and the temperature sensitive polymer material 100. Correlation function correlation database between the temperature and the peak value of the fluorescence intensity.

在其他實施例中,該光源可選取在可見光範圍內波長連續可調的單色光源,並對應採集該熱敏高分子材料100在波長連續可調的光源、不同溫度下的螢光光強峰值,得到光源波長、該熱敏高分子材料100的溫度及螢光光強峰值三者之間的對應函數關聯資料庫。 In other embodiments, the light source can select a monochromatic light source whose wavelength is continuously adjustable in the visible light range, and correspondingly collect the fluorescent light intensity peak of the temperature-continuously adjustable light source of the thermosensitive polymer material 100 at different temperatures. A correlation function correlation database between the wavelength of the light source, the temperature of the thermosensitive polymer material 100, and the peak of the fluorescence intensity is obtained.

步驟S103,請參閱圖6,提供已經固晶打線的發光二極體封裝結構60,將所述熱敏高分子材料100置於待測發光二極體晶片64上,使該待測發光二極體晶片64通電發光,用光譜議(圖未示)測量該熱敏高分子材料100的螢光光強峰值,將該螢光光強峰值及待測發光二極體晶片64所發出光源的波長與所述資料庫中對應的螢光光強峰值及波長匹配,即可得到待測發光二極體晶片64的溫度。 Step S103, referring to FIG. 6, providing a light-emitting diode package structure 60 that has been bonded and grounded, and placing the heat-sensitive polymer material 100 on the light-emitting diode wafer 64 to be tested, so that the light-emitting diode to be tested is The bulk wafer 64 is electrically illuminated, and the peak intensity of the fluorescent light of the thermosensitive polymer material 100 is measured by a spectroscopic diagram (not shown), and the peak of the fluorescent light intensity and the wavelength of the light source emitted from the LED substrate 64 to be tested are measured. The temperature of the fluorescent diode chip 64 to be tested can be obtained by matching the corresponding fluorescence intensity peak and wavelength in the database.

該發光二極體封裝結構60包括表面裝設有電極61的基板62、設置於基板62上的反射杯63及設於反射杯63底部並與電極61電連接的待測發光二極體晶片64。該待測發光二極體晶片64藉由導線(未標示)與電極61電連接。 The LED package structure 60 includes a substrate 62 on the surface of which the electrode 61 is mounted, a reflective cup 63 disposed on the substrate 62, and a light-emitting diode wafer 64 to be tested that is disposed at the bottom of the reflective cup 63 and electrically connected to the electrode 61. . The LED array 64 to be tested is electrically connected to the electrode 61 by a wire (not shown).

該熱敏高分子材料100直接覆蓋於發光二極體晶片64上,再將透明封裝層70覆蓋於該熱敏高分子材料100。當然,該熱敏高分子材料100也可以先摻入到透明封裝層70內,再將該透明封裝層70覆蓋於該發光二極體晶片64上。該透明封裝層70為矽膠、環氧樹脂或其他高分子的透明材料。 The thermosensitive polymer material 100 is directly coated on the LED substrate 64, and the transparent encapsulating layer 70 is covered on the thermosensitive polymer material 100. Of course, the thermosensitive polymer material 100 may also be incorporated into the transparent encapsulation layer 70, and the transparent encapsulation layer 70 may be overlaid on the LED substrate 64. The transparent encapsulation layer 70 is a transparent material of silicone, epoxy or other polymer.

該電極61與外部電源導通後即可使發光二極體晶片64發光。該發光二極體晶片64較佳為發藍光的氮化鎵基發光二極體晶片。 該發光二極體晶片64發出的一部分藍光對該熱敏高分子材料100進行 激發,該熱敏高分子材料100受到藍光的激發輻射出黃綠光,該黃綠光與該發光二極體晶片64發出的剩餘藍光混合形成白光。 The electrode 61 is electrically connected to the external power source to cause the light-emitting diode wafer 64 to emit light. The LED wafer 64 is preferably a blue-emitting gallium nitride-based light-emitting diode wafer. A part of the blue light emitted from the LED wafer 64 is applied to the thermosensitive polymer material 100. Excited, the thermosensitive polymer material 100 is excited by the blue light to emit yellow-green light, which is mixed with the remaining blue light emitted by the light-emitting diode wafer 64 to form white light.

用光譜議(圖未示)測量處於工作狀態時的發光二極體封裝結構60中的熱敏高分子材料100的螢光光強,將該熱敏高分子材料100的螢光光強峰值及待測發光二極體晶片64發出光線的波長與所述資料庫中對應的螢光光強峰值及波長匹配,從而得到待測發光二極體晶片64的溫度。 The fluorescence intensity of the thermosensitive polymer material 100 in the light-emitting diode package structure 60 in the operating state is measured by a spectral discussion (not shown), and the peak intensity of the fluorescent light of the heat-sensitive polymer material 100 is The wavelength of the light emitted by the LED array 64 to be tested matches the peak and wavelength of the corresponding fluorescent light intensity in the database, thereby obtaining the temperature of the LED array 64 to be tested.

在本發明中,該熱敏性高分子支撐體10隨外部環境溫度的升高(降低)而逐漸皺縮(膨脹),進而引起包覆於該熱敏性高分子支撐體10內的該螢光分子20的螢光光強的逐漸增強(減弱),利用該螢光分子20的螢光光強與溫度之間的變化關係,只需要測量該熱敏高分子材料100的螢光光強,就可以得出發光二極體晶片64的溫度。由於該熱敏高分子材料100微小的溫度變化都會引起該熱敏高分子材料100的螢光光強的變化,所以這種發光二極體晶片64的溫度測量方法得出的結果接近該發光二極體晶片64的實際溫度。 In the present invention, the heat-sensitive polymer support 10 is gradually shrunk (expanded) as the temperature of the external environment increases (decreases), thereby causing the fluorescent molecules 20 to be coated in the heat-sensitive polymer support 10. The gradual enhancement (attenuation) of the fluorescence intensity, by using the relationship between the fluorescence intensity of the fluorescent molecule 20 and the temperature, it is only necessary to measure the fluorescence intensity of the thermosensitive polymer material 100. The temperature of the photodiode wafer 64. Since a slight temperature change of the thermosensitive polymer material 100 causes a change in the fluorescence intensity of the thermosensitive polymer material 100, the temperature measurement method of the light-emitting diode wafer 64 is close to the light emission. The actual temperature of the polar body wafer 64.

可以理解地,為了使得得出的結果更準確反映發光二極體晶片64的實際溫度,將該熱敏高分子材料100摻入到透明封裝層70內時,該熱敏高分子材料100在透明封裝層70中的分佈可以不均勻,比如該熱敏高分子材料100集中分佈於該發光二極體晶片64周圍。 It can be understood that, in order to make the obtained result more accurately reflect the actual temperature of the LED wafer 64, when the thermosensitive polymer material 100 is incorporated into the transparent encapsulation layer 70, the thermosensitive polymer material 100 is transparent. The distribution in the encapsulation layer 70 may be uneven, for example, the thermosensitive polymer material 100 is concentrated around the LED array 64.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限製本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

Claims (10)

一種發光二極體晶片的溫度測量方法,包括以下步驟:提供熱敏高分子材料,該熱敏高分子材料包括熱敏性高分子支撐體和分散於該熱敏性高分子支撐體中的螢光分子、交聯劑、負離子基團及水分 子,其中該熱敏性高分子支撐體的結構為,其中R為碳原子 數為3的飽和烷基,該螢光分子的結構為,其中x 為1或2,該螢光分子包覆於該熱敏性高分子支撐體內,當外部環境溫度升高時,該熱敏性高分子支撐體隨之逐漸皺縮,進而引起包覆於該熱敏性高分子內的該螢光分子的螢光光強逐漸增強,當外部環境溫度降低時,該熱敏性高分子支撐體隨之逐漸膨脹,進而引起包覆於該熱敏性高分子內的該螢光分子的螢光光強隨之逐漸減弱,該負離子基團阻止該螢光分子與該熱敏性高分子支撐體發生交聯,該交聯劑促進該熱敏性高分子支撐體的交聯,該熱敏性高分子支撐體的最低臨界溶解溫度為32℃;用一定波長的光源激發所述熱敏高分子材料,並採集該熱敏高分子材料在該波長的光源、不同溫度條件下的螢光的光強值,再變換光源的波長值,重複採集該熱敏高分子材料在不同溫度條件下的螢光的光強值,從而得到光源的波長、該熱敏高分子材料的溫度及螢光的光強值三者之間的對應函數關聯資料庫; 提供已固晶打線的發光二極體封裝結構,將所述熱敏高分子材料置於待測發光二極體晶片上,使該待測發光二極體晶片通電發光,用光譜議測量該熱敏高分子材料的螢光光強,將該螢光的光強值及待測發光二極體晶片發出的光線的波長與所述資料庫中對應的螢光的光強值及波長匹配,從而得到待測發光二極體晶片的溫度。 A method for measuring a temperature of a light-emitting diode wafer, comprising the steps of: providing a heat-sensitive polymer material comprising a heat-sensitive polymer support and a fluorescent molecule dispersed in the heat-sensitive polymer support; a coupling agent, an anion group, and a water molecule, wherein the structure of the thermosensitive polymer support is Wherein R is a saturated alkyl group having 3 carbon atoms, and the structure of the fluorescent molecule is Wherein x is 1 or 2, and the fluorescent molecule is coated in the heat-sensitive polymer support body, and when the temperature of the external environment is increased, the heat-sensitive polymer support body is gradually shrunk, thereby causing the coating to have high heat sensitivity. The fluorescence intensity of the fluorescent molecule in the molecule is gradually increased, and when the temperature of the external environment is lowered, the heat-sensitive polymer support gradually expands, thereby causing the fluorescent molecule of the fluorescent molecule coated in the thermosensitive polymer. The light intensity is gradually weakened, and the negative ion group prevents the fluorescent molecule from cross-linking with the heat-sensitive polymer support, and the crosslinking agent promotes crosslinking of the heat-sensitive polymer support, and the heat-sensitive polymer support The minimum critical solution temperature is 32 ° C; the thermosensitive polymer material is excited by a light source of a certain wavelength, and the intensity value of the fluorescent polymer at the wavelength of the light source and the temperature under different temperature conditions is collected, and then converted. a wavelength value of the light source, and repeatedly collecting the intensity value of the fluorescent material of the thermosensitive polymer material under different temperature conditions, thereby obtaining a wavelength of the light source, a temperature of the thermosensitive polymer material, and Corresponding function correlation database between the light intensity values of the light; providing a light-emitting diode package structure with a solid-crystal wire bonding, placing the heat-sensitive polymer material on the light-emitting diode chip to be tested, so that the The light-emitting diode chip to be tested is electrically light-emitting, and the fluorescence intensity of the heat-sensitive polymer material is measured by a spectroscopic measurement, and the light intensity value of the fluorescent light and the wavelength of the light emitted by the light-emitting diode wafer to be tested are The light intensity values and wavelengths of the corresponding fluorescent lights in the database are matched to obtain the temperature of the light emitting diode chip to be tested. 如申請專利範圍第1項所述之發光二極體晶片的溫度測量方法,其中,該熱敏性高分子支撐體在不同溫度下具有不同的交聯度,該熱敏性高分子支撐體的溫度升高時,該熱敏性高分子支撐體的交聯度隨之變大,該熱敏性高分子支撐體的分子間距隨之變小,該熱敏性高分子支撐體逐漸皺縮,該熱敏性高分子支撐體的溫度降低時,該熱敏性高分子支撐體的交聯度隨之變小,該熱敏性高分子支撐體的分子間距隨之變大,該熱敏性高分子支撐體逐漸膨脹。 The method for measuring the temperature of a light-emitting diode wafer according to claim 1, wherein the heat-sensitive polymer support has a different degree of crosslinking at different temperatures, and the temperature of the heat-sensitive polymer support increases. The degree of crosslinking of the heat-sensitive polymer support is increased, and the molecular spacing of the heat-sensitive polymer support is reduced, and the heat-sensitive polymer support is gradually shrunk, and when the temperature of the heat-sensitive polymer support is lowered The degree of crosslinking of the heat-sensitive polymer support is reduced, and the molecular spacing of the heat-sensitive polymer support is increased, and the heat-sensitive polymer support gradually expands. 如申請專利範圍第2項所述之發光二極體晶片的溫度測量方法,其中,該熱敏性高分子支撐體的吸熱反應和放熱反應係可逆的。 The method for measuring the temperature of a light-emitting diode wafer according to claim 2, wherein the endothermic reaction and the exothermic reaction of the heat-sensitive polymer support are reversible. 如申請專利範圍第3項所述之發光二極體晶片的溫度測量方法,其中,該熱敏性高分子支撐體逐漸皺縮時,該螢光分子與分散於該熱敏性高分子支撐體中的水分子的作用距離逐漸變短,該螢光分子與分散於該熱敏性高分子支撐體中的水分子的相互作用逐漸變強,該螢光分子的螢光光強隨之增強,當該熱敏性高分子支撐體逐漸膨脹時,該螢光分子與水分子的作用距離逐漸變長,該螢光分子與水分子的相互作用逐漸變弱,該螢光分子的螢光光強逐漸減弱。 The method for measuring the temperature of a light-emitting diode wafer according to the third aspect of the invention, wherein, when the heat-sensitive polymer support is gradually shrunk, the fluorescent molecule and the water molecule dispersed in the heat-sensitive polymer support The action distance is gradually shortened, and the interaction between the fluorescent molecules and the water molecules dispersed in the thermosensitive polymer support gradually becomes stronger, and the fluorescence intensity of the fluorescent molecules is enhanced, when the thermosensitive polymer supports When the body gradually expands, the interaction distance between the fluorescent molecules and the water molecules becomes longer, the interaction between the fluorescent molecules and the water molecules becomes weaker, and the fluorescence intensity of the fluorescent molecules gradually decreases. 如申請專利範圍第1項所述之發光二極體晶片的溫度測量方法,其中,所述熱敏高分子材料直接覆蓋於發光二極體晶片上,然後再將透明封裝層覆蓋於該熱敏高分子材料上。 The method for measuring the temperature of a light-emitting diode wafer according to claim 1, wherein the heat-sensitive polymer material directly covers the light-emitting diode wafer, and then the transparent packaging layer is covered with the heat-sensitive layer. On polymer materials. 如申請專利範圍第1項所述之發光二極體晶片的溫度測量方法,其中,該熱敏性高分子支撐體具有一定的溫度響應範圍,當溫度超 出該溫度響應範圍時,該熱敏性高分子支撐體的分子間距將不產生變化。 The method for measuring a temperature of a light-emitting diode wafer according to claim 1, wherein the heat-sensitive polymer support has a certain temperature response range, when the temperature is super When the temperature response range is exceeded, the molecular distance of the heat-sensitive polymer support does not change. 如申請專利範圍第1項所述之發光二極體晶片的溫度測量方法,其中,所述熱敏性高分子支撐體中的飽和烷基R為異丙基、丙基或叔丁基中的一種,該負離子基團為磺酸基,該螢光分子結構為 ,該交聯劑係亞甲基雙丙烯醯胺。 The method for measuring the temperature of a light-emitting diode wafer according to the first aspect of the invention, wherein the saturated alkyl group R in the heat-sensitive polymer support is one of an isopropyl group, a propyl group or a t-butyl group. The negative ionic group is a sulfonic acid group, and the fluorescent molecular structure is The crosslinking agent is methylenebis acrylamide. 如申請專利範圍第6項所述之發光二極體晶片的溫度測量方法,其中,所述熱敏性高分子支撐體的溫度響應範圍為25℃-45℃。 The method for measuring the temperature of a light-emitting diode wafer according to claim 6, wherein the temperature-sensitive polymer support has a temperature response range of 25 ° C to 45 ° C. 一種熱敏高分子材料,包括熱敏性高分子支撐體和分散於該熱敏性高分子支撐體中的螢光分子、交聯劑、負離子基團及水分子,其 中該熱敏性高分子支撐體的結構為,其中R為碳原子數為3 的飽和烷基,該螢光分子的結構為,其中x為1或 2,當外部環境溫度升高時,該熱敏性高分子支撐體隨之逐漸皺縮,該螢光分子的螢光光強逐漸增強,當外部環境溫度降低時,該熱敏性高分 子支撐體隨之逐漸膨脹,該螢光分子的螢光光強逐漸減弱,該熱敏性高分子支撐體的最低臨界溶解溫度為32℃。 A heat-sensitive polymer material comprising a heat-sensitive polymer support and a fluorescent molecule, a crosslinking agent, an anion group and a water molecule dispersed in the heat-sensitive polymer support, wherein the structure of the heat-sensitive polymer support is Wherein R is a saturated alkyl group having 3 carbon atoms, and the structure of the fluorescent molecule is Where x is 1 or 2, when the temperature of the external environment increases, the heat-sensitive polymer support gradually shrinks, and the fluorescence intensity of the fluorescent molecule gradually increases, and when the temperature of the external environment decreases, the heat sensitivity is high. The molecular support gradually expands, and the fluorescence intensity of the fluorescent molecule gradually decreases. The minimum critical solution temperature of the thermosensitive polymer support is 32 °C. 如申請專利範圍第9項所述之熱敏高分子材料,其中,該負離子基團能阻止該螢光分子與該熱敏性高分子支撐體交聯,該交聯劑促進該熱敏性高分子支撐體的交聯。 The heat-sensitive polymer material according to claim 9, wherein the negative ion group prevents the fluorescent molecule from being crosslinked with the heat-sensitive polymer support, and the crosslinking agent promotes the heat-sensitive polymer support Cross-linking.
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