TWI613798B - Printheads and a printer cartridge with high dielectric eprom cells - Google Patents

Abstract

In an example according to the present disclosure, a print head having several high-dielectric erasable and programmable read-only memory (EPROM) cells is illustrated. The print head is used to deposit fluid onto a print medium. The print head also includes several EPROM cells. Each EPROM cell includes a substrate having a source and a drain, a floating gate separated from the substrate by a first dielectric layer, and a second dielectric layer A control gate separate from the floating gate. The second dielectric layer includes a high dielectric constant material.

Description

Print head and printer cartridge with high dielectric, erasable and programmable read-only memory cells Field of invention

The invention relates to a print head with high dielectric erasable and programmable read-only memory cells.

Background of the invention

A memory system can be used to store data. In some examples, the imaging device, for example, the print head may include memory for storing printer identification information, security information, and authentication information about other types of information.

Summary of invention

According to an embodiment of the present invention, a print head having a plurality of high-dielectric erasable and programmable read-only memory (EPROM) cells is specifically proposed. The print head includes: a plurality of nozzles, which are used for Depositing a quantity of fluid onto a printing medium, each nozzle comprising: a launching chamber for holding the quantity of fluid; an opening for distributing the quantity of fluid onto the printing medium; and a An ejector for ejecting the quantity of fluid through the opening; and several EPROM cells, each EPROM cell including: a base A chip having a source and a drain disposed therein; a floating gate separated from the substrate by a first dielectric layer; and a control gate by a second dielectric A dielectric layer is separated from the floating gate; wherein the second dielectric layer includes a high dielectric constant material.

100‧‧‧printing system

102‧‧‧ Computing Device

106‧‧‧controller

108‧‧‧ processor

110‧‧‧data storage device

112‧‧‧ Fluid Supply

114‧‧‧Printer cartridge

116‧‧‧Print head

124‧‧‧Nozzle

126‧‧‧Print media

130‧‧‧Power supply

134‧‧‧High Dielectric EPROM Array

248‧‧‧High Dielectric EPROM Cell

336‧‧‧Flexible cable

338‧‧‧Conductive gasket

342‧‧‧Ejector

344‧‧‧ launch container

346‧‧‧Opening

450‧‧‧Control gate

452‧‧‧ floating gate

454‧‧‧ Substrate

456‧‧‧Source

458‧‧‧ Drain

460‧‧‧First dielectric layer

462‧‧‧Polycrystalline silicon layer

464‧‧‧The first conductive layer

466‧‧‧Second dielectric layer

468‧‧‧Second conductive layer

478‧‧‧ third dielectric layer

570‧‧‧floating gate voltage

572‧‧‧ Applied voltage

574‧‧‧Control gate capacitance

576‧‧‧Floating gate capacitor

680‧‧‧ Memristor

684‧‧‧first electrode

686‧‧‧Switch oxide

688‧‧‧Second electrode

688-1‧‧‧Second electrode first sublayer

688-2‧‧‧second electrode second sublayer

690‧‧‧Transmitting resistor first layer

692‧‧‧Laser resistor second layer

694‧‧‧Third layer of transmitting resistor

696, 699‧‧‧Print head passive layer

698-1‧‧‧First transistor

698-2‧‧‧Second transistor

The drawings illustrate various examples of the principles described herein and are a part of the description. The illustrated examples are not limited to the scope of patent application.

FIG. 1 is a diagram of a printing system according to an example of the principles described herein.

FIG. 2 is a block diagram of a printer cartridge using a print head with several high-dielectric erasable programmable read-only memory (EPROM) cells in accordance with an example of the principles described herein.

FIG. 3A is a diagram of a printer cartridge having one of several high-dielectric EPROM cells in accordance with an example of the principles described herein.

3B is a cross-sectional illustration of a printer cartridge having one of several high-dielectric EPROM cells in accordance with an example of the principles described herein.

3C is a cross-sectional illustration of a print head having one of several high-dielectric EPROM cells in accordance with an example of the principles described herein.

FIG. 4A is a circuit diagram of a high-dielectric EPROM cell according to an example of the principles described herein.

4B is a cross-sectional view of a high-dielectric EPROM cell according to an example of the principles described herein.

Figure 5 is an example of a principle based on the principles described here. A circuit diagram of a print head of one of the EPROM cells.

6 is a cross-sectional view of a print head including a high-dielectric EPROM cell, a memristor, and an emission resistor according to an example of the principles described herein.

In the overall drawings, the same reference numbers indicate similar, but not necessarily the same components.

Detailed description of the preferred embodiment

A memory device is used to store information for a printer cartridge. The printer cartridge includes memory to store information about the operation of the print head. For example, a print head may include memory to store information about 1) the print head; about 2) fluid, for example, the ink used for the print head; or about 3) the print head Use and maintenance. Examples of other information that can be stored on a printhead, including information about other types of fluid or imaging device related data, including: 1) a fluid supply information, 2) fluid identification information, 3) fluid characteristics information, and ) Fluid usage information. Examples of more information that can be stored include identification information, serial numbers, security information, feature information, and anti-counterfeiting (ACF) information among other types of information. Although memory utilization on print heads is required, changing circumstances can reduce their effectiveness in storing information.

For example, the increasing trend of counterfeiting may cause current memory devices to be too small to contain sufficient security information and security and authentication information. In addition, due to loyal customer reward planning, new business modules through cloud printing and other printing structures, and other customer relationship management planning, additional marketing For field data, customer appreciation value information, encrypted information, and other types of information on the rise, a manufacturer may request to store more information on a memory device in a printer cartridge.

In addition, as new technologies are created, circuit space is very precious. Therefore, a larger amount of data storage that occupies less space within a device may be required. Erasable and Programmable Read-Only Memory (EPROM) cells can be used because of their simple structure, non-erasability, and efficient data storage. The EPROM array includes a conductive grid of one of rows and columns. EPROM cells placed at the intersection of columns and rows have two gates that are separated from each other by a dielectric layer. One of these gates is called a floating gate and the other is called a control gate. A logical value can be expressed by either allowing current to flow or preventing current from flowing through the EPROM cell. In other words, the logical value of an EPROM cell can be determined by the resistance of the EPROM cell. This resistance is dependent on the voltage of the floating gate in the EPROM cell. Although such EPROM cells can be used as useful memory storage devices, their use presents several intricacies.

For example, a print head is formed by depositing a layer of material on a substrate surface. Because an EPROM cell includes two gates, multiple additional layers of material are used to form these EPROM cells. The additional layers increase the print head thickness and the overall size of the print head. In addition, as will be explained below, in order to generate an EPROM that is easily read from and written to a dielectric layer, that is, a control gate and a floating gate in the EPROM cell The layers in between may be quite thick, and their thickness is further increased The size and inefficiency of EPROM as a memory storage device.

Thus, this disclosure illustrates a printhead with EPROM cells that mitigate these and other complications. For example, an EPROM cell can be formed using a memory capacitor to form a portion of the EPROM cell. More specifically, a first conductive layer, which forms a part of the floating gate, may be separated from a second conductive layer forming one of the control gates by a dielectric layer. The dielectric layer may be formed of an oxide material having a high dielectric constant. Using this interlayer with a high dielectric constant oxide material as a dielectric material between two conductive, or metal flat plates, allows a thinner EPROM cell to be formed while retaining it for efficient memory storage One is fully capacitive.

More specifically, this disclosure illustrates a print head having one of several high-dielectric erasable and programmable read-only memory (EPROM) cells. The print head includes a plurality of nozzles for depositing a quantity of fluid onto a print medium. Each nozzle includes a firing chamber for holding one of the quantity of fluid, an opening for distributing the quantity of fluid to the printing medium, and one for ejecting the quantity of fluid through the opening. Device. The print head also includes several EPROM cells. Each EPROM cell includes a substrate having a source and a drain disposed therein, a floating gate separated from the substrate by a first dielectric layer, and a second gate by a second dielectric layer. A control gate separated from the floating gate by a dielectric layer. The second dielectric layer includes a high dielectric constant material.

This disclosure also illustrates a printer cartridge having one of several high-dielectric EPROM cells. The printer cartridge includes a fluid supply and a The fluid from the fluid supply is deposited on a print head on a print medium. The print head includes several EPROM cells. Each EPROM cell includes a substrate having a source and a drain disposed therein, a polycrystalline silicon layer separated from the substrate by a first dielectric layer, and a third dielectric A first conductive layer separated from the polycrystalline silicon layer; The first conductive layer contacts the polycrystalline silicon layer through a gap in the third dielectric layer, and the first conductive layer and the polycrystalline silicon layer form a floating gate of the EPROM cell. At the same time, the print head also includes a second conductive layer separated from the first conductive layer by a second dielectric layer. The second conductive layer forms a control gate of the EPROM cell and the second dielectric layer has a high dielectric constant.

Using a high-dielectric EPROM cell printer cartridge and a print head can provide a memory storage section to a print head in the form of EPROM memory, and reduce the number of layers and layer thickness used to form the print head . In addition, the layers used to form the EPROM may correspond to layers used to form other components, such as the emission resistors and memristors of a print head. Therefore, several layers set can be used cooperatively to form the EPROM memory cells.

As used in this description and in the scope of the additional patent application, the term "printer cartridge" may refer to a device used to eject ink, or other fluids, onto a print medium. Generally, a printer cartridge may be a fluid ejection device that dispenses a fluid (eg, ink, wax, polymer, or other fluid). A printer cartridge may include a print head. In some examples, a print head can be used in printers, graphics plotters, photocopiers, and fax machines. In these examples, a print head can Ink, or another fluid, is sprayed onto a medium (e.g., paper) to form a desired image or a desired three-dimensional geometry.

Therefore, as used in this description and in the scope of the appended patent application, the word "printer" is meant to be broadly understood as any device capable of selectively placing a fluid on a print medium. In one example, the printer is an inkjet printer. In another example, the printer is a three-dimensional printer. However, in another example, the printer is a digital titration device.

Furthermore, as used in this description and in the scope of the additional patent application, the word "fluid" means any substance that is widely understood as continuously deforming under an applied shear stress. In one example, a fluid may be a drug. In another example, the fluid may be an ink. In another example, the fluid may be a liquid.

Furthermore, as used in this description and in the scope of the appended patent application, the word "printing medium" is used to mean a broad understanding of any surface in which a nozzle ejected from a nozzle of a printer cartridge Fluid can be deposited on the surface. In one example, the print medium may be paper. In another example, the print medium may be an edible substrate. However, in another example, the print medium may be a pill.

Furthermore, as used in this description and in the scope of additional patent applications, the word "memristor" may refer to a passive two-point circuit element that is maintained between the time integral of current and the time integral of voltage. A functional relationship between them.

Further, as in this description and in additional patent applications As used in the context, the term "high dielectric" may refer to any structure that includes a dielectric layer having a dielectric constant greater than one of six. For example, a high dielectric EPROM may be an EPROM having at least one dielectric layer (ie, a second dielectric layer having a dielectric constant greater than 6). Similarly, a high dielectric oxide material may be an oxide material having a dielectric constant greater than one of six.

Furthermore, as used in this description and in the scope of the additional patent application, the word "short channel" may refer to a transistor having a short channel length. For example, the space between the source and the drain of the channel can be the same number of stages for the width of the consumption layer. As a numerical example, the distance between a source and a drain of a short-channel transistor may be smaller than 2.4 micron.

Still further, as used in this specification and in the scope of additional patent applications, unless clearly indicated by the context herein, "a", "an", and "the" are intended to include the plural.

Still further, as used in this description and in the scope of additional patent applications, the word "several" or similar language may include any positive number (including 1 to infinity), but excluding zero, which is not a positive number.

In the following description, for the purposes of illustration, many specific details are set forth in order to provide a thorough understanding of the system and method. However, those skilled in the art will understand that the devices, systems, and methods may be implemented without these specific details. The reference to "an example" or similar language in the description means that one of the specific features, structures, or characteristics mentioned above is included in at least one example, but not necessarily in other examples.

Turning next to the figure, FIG. 1 is a diagram of a printing system (100) having a printer cartridge (114) and a print head (116) according to an example of the principles described herein. In some examples, the printing system (100) may be included on a printer. The system (100) includes an interface having a computing device (102). The interface enables the system (100), and specifically, the processor (108) is used to interface to various hardware components, such as a computing device (102) external to and internal to the system (100). Other examples of external devices include external storage devices, network devices (eg, servers), switches, routers, and client devices among other types of external devices.

Generally, the computing device (102) can be from any source, and the system (100) can receive data from that source, which describes a job to be performed by the controller (106) to eject fluid to the print medium (126 )on. For example, via the interface, the controller (106) receives data from the computing device (102) and temporarily stores the data in the data storage device (110). Data can be transmitted to the controller (106) along an electrical, infrared, optical, or other information transfer path. This information may represent one document and / or file to be printed. Therefore, the data forms a job and includes job commands and / or command parameters.

A controller (106) includes a processor (108), a data storage device (110), and other electrical appliances for communicating with and controlling the print head (116). The controller (106) receives data from the computing device (102) and temporarily stores the data in a data storage device (110).

A controller (106) controls the print head (116) to eject fluid from a nozzle (124). For example, the controller (106) defines the words, symbols, and / or The pattern of other graphics or images on a print medium (126) as a jet of fluid. The pattern of the ejected fluid droplets is determined by a print job command and / or command parameters received from the computing device (102). The controller (106) may be, for example, an application specific integrated circuit (ASIC) on a printer to determine the print head based on the resistance value of the EPROM cell integrated on the print head (116). 116) fluid level. The ASIC may include a power supply and an analog-to-digital converter (ADC). The ASIC converts a voltage present at the power source to determine a resistance of an EPROM cell, and then passes the ADC to determine a corresponding digital resistance value. The computer can read the code, execute the executable instructions, enable the resistance determination, and then perform the digital conversion of the ADC.

The processor (108) may include a hardware structure to obtain executable code from the data storage device (110) and execute the executable code. When executed by the processor (108), the executable code can cause the processor (108) to perform a function of at least ejecting fluid onto the print medium (126). When executed by the processor (108), the executable code can also cause the processor (108) to perform the function of providing instructions to the power supply (130), so that the power supply (130) provides power to the system ( 100).

The data storage device (110) may store data, for example, executable code executed by a processor (108) or other processing device. The data storage device (110) may specifically store computer program code representing several application programs executed by the processor (108) to perform at least the functions described herein.

The data storage device (110) may include various types of memory Modulus, which includes electrical and non-electrical memory. For example, the data storage device (110) of this example includes a random access memory (RAM), a read-only memory (ROM), and a hard disk drive (HDD) memory. Many other types of memory can also be used, and this description anticipates that the use of many variants of memory in the data storage device (110) can be adapted to a particular application of the principles described herein. In some examples, different types of memory in the data storage device (110) can be used for different data storage requirements. For example, in some examples, the processor (108) may be booted from read-only memory (ROM), maintained non-electrically stored in hard disk drive (HDD) memory, and executed in random access memory Code in the RAM (RAM).

Generally, the data storage device (110) may include a computer-readable medium, a computer-readable storage medium, or a non-transitory computer-readable medium, and so on. For example, the data storage device (110) may be an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or device, or any suitable combination of the foregoing. More specific examples of computer-readable storage media may include, for example, the following: an electrical connection with one of several lines, a portable computer diskette, a hard disk drive, a random access memory (RAM), a unique memory Read memory (ROM), an erasable and programmable read-only memory (EPROM or flash memory), a compact compact disc read-only memory (CD-ROM), an optical storage device, a magnetic type A storage device, or any suitable combination of the foregoing. In the context of this document, a computer-readable storage medium can be any tangible medium that can contain or store computer-usable code for use by or connected to an instruction execution system, device, or device. In another example, a computer-readable storage medium may Is any non-transitory medium that can contain or store a program for use by or in connection with a command execution system, device, or device.

The printing system (100) includes a printer cartridge (114). The printer cartridge (114) includes a print head (116) and a fluid supply (112). The printer cartridge (114) may be removable from the system (100), for example, as a replaceable printer cartridge (114).

The printer cartridge (114) includes a print head (116) that ejects fluid droplets toward a print medium (126) through a plurality of nozzles (124). The print medium (126) may be any type of suitable sheet or rolling material, such as paper, card stock, transparencies, polyester, plywood, foam board, cloth, canvas, and the like. In another example, the print medium (126) may be an edible substrate. In yet another example, the print medium (126) may be a pill.

The nozzles (124) can be arranged in rows or arrays, so that when the print head (116) and the print medium (126) move relative to each other, the jets of fluid from the nozzles (124) are properly ordered, resulting in Text, symbols, and / or other graphics or images are printed on the print medium (126). In one example, the number of nozzles (124) emitted may be smaller than one of the total number of nozzles (124) available and defined on the print head (116).

The printer cartridge (114) also includes a fluid supply (112) to supply a quantity of fluid to the print head (116). Generally, fluid flows between the fluid supply (112) and the print head (116). In some examples, the fluid supplied to a portion of the print head (116) is consumed during operation and the fluid not consumed during printing is returned to the fluid supply (112).

In some examples, a mounting assembly places a print head (116) relative to a media transport assembly, and a media transport assembly places the print medium (126) relative to the print head (116). . Therefore, a printing area (128), represented by a dashed frame, is defined adjacent to the nozzles (124) in an area between the printing head (116) and the printing medium (126). ). In one example, the print head (116) is a scan-type print head (116). Thus, the mounting assembly includes a transport cylinder for moving the print head (116) relative to the media transport assembly to scan the print medium (126). In another example, the print head (116) is a non-scanning print head (116). Thus, the mounting assembly fixes the print head (116) at a predetermined position relative to the media transport assembly. Therefore, the print medium (126) is placed relative to the print head (116) by the media transport assembly.

The print head (116) also includes a high-dielectric EPROM array (134). As mentioned above, a high dielectric EPROM array (134) can be used to store data. For example, each EPROM cell can initially make all the gates, that is, the control gate and the floating gate open, placing each EPROM cell in the array (134) in a low resistance state. To plan one EPROM cell of the EPROM array (134), or to change the state of the EPROM cell, for example, to a high resistance state, a planning voltage is applied to one of the EPROM cells to control the gate and the drain, and One of the EPROM sources and the substrate is maintained at ground. The planned voltage is injected through the heat carrier to draw electrons from the drain to the floating gate. The excited electrons are pushed through and trapped on the other side of the dielectric layer, providing more negative charge to the floating gate, thereby increasing the effective threshold voltage of the floating gate of the EPROM cell. Threshold voltage indicating a minimum voltage Used to energize a crystal or EPROM cell. During the use of EPROM cells, a cell impedance measurement unit monitors the resistance of the EPROM cells. If the EPROM cell resistance is low, the EPROM cell is determined to be in a first state (or pre-planning state) associated with a first logic value. If the cell resistance is high, the cell is determined to be in a second state (or planning state) associated with a second logic value. Therefore, a string of planned and unplanned EPROM cell symbols in an EPROM array (134) forms a series of 1s and 0s, which are used to represent the data stored in the print head (116) .

During reading, a single EPROM cell in an EPROM array (134) can be identified. In this example, each EPROM cell is connected to a row of select transistors and a column of select transistors for multiplexing. When both transistors are turned on, the EPROM cell is selected. The selection transistors are controlled by a multiplexed signal.

The EPROM array (134) is a high-dielectric EPROM array (134), which means that the EPROM array (134) is formed of EPROM cells having at least one dielectric layer (which has a high dielectric constant). For example, a layer of a dielectric material having a high dielectric constant may be placed between the floating gate and the control gate of the EPROM cell. A material with a high dielectric constant allows a thinner EPROM cell and a correspondingly thinner EPROM array (134) to be used on all print heads (116) while maintaining an EPROM cell in its There is a sufficient difference between them. In other words, a high dielectric constant may cause a large gap between the voltages corresponding to an unplanned and planned state of one EPROM cell, so that it is easy to detect different voltages and corresponding logic values are enabled. As will be explained below, the EPROM cell A short-channel transistor may be included, which includes a source, a drain, and a gate oxide.

As will be explained below, the high-dielectric EPROM array (134) can be used to store any type of data. Among other types of data, examples of data that can be stored in the high-dielectric EPROM array (134) include fluid supply specific data and / or fluid identification data, fluid characterization data, fluid usage data, print head (116 ) Specific data, print head (116) identification data, warranty data, print head (116) characteristic data, print head (116) usage data, authentication data, security data, anti-counterfeit data (ACF), ink drop weight, Transmit frequency, start print position, acceleration information, and gyroscope information. In several examples, the high-dielectric EPROM array (134) is written during manufacturing and / or during printer cartridge (114) operation. The stored data can provide information to the controller to adjust the operation of the printer and ensure correct operation.

Figure 2 is a block diagram of a printer cartridge (114) using a print head (116) with several high-dielectric EPROM cells (248) according to an example of the principles described herein. In some examples, the printer cartridge (114) includes a print head (116) that performs at least a portion of the functions of the printer cartridge (114). For example, the print head (116) may include several nozzles (FIG. 1, 124). The print head (116) ejects fluid from a nozzle (Fig. 1, 124) onto a print medium according to a received print job (Fig. 1, 126). The print head (116) may also include other circuits for performing various functions related to printing. In some examples, the print head (116) is a component of a larger system, such as an integrated print head (IPH). The print head (116) may be a variant. E.g, Among other types of print heads (116), the print head (116) may be a thermal inkjet (TIJ) print head or a piezoelectric inkjet (PIJ) print head.

The print head (116) includes a high-dielectric EPROM array (134) to store information about at least one of a printer cartridge (114) and a print head (116). In some examples, the high-dielectric EPROM array (134) includes several high-dielectric EPROM cells (248-1, 248-2) formed in the print head (116). To store information, an EPROM cell (248) can be set to a specific logical value.

As will be described below, an EPROM cell (248) includes a control gate, a floating gate, and a semiconductor substrate. The control gate and the floating gate are capacitively coupled to each other with a dielectric material between them, so that the control gate voltage is coupled to the floating gate voltage. Another dielectric material layer is also disposed between the floating gate and the semiconductor substrate.

An EPROM array (134) can store information by setting several EPROM cells (248) to different logical values. Setting an EPROM cell (248) to a value other than its initial value can be referred to as planning the EPROM cell (248). During the planning period, a high voltage bias on the drain of the EPROM cell (248) generates vibrant "hot" electrons. A positive voltage bias between the control gate and the drain pulls some of these hot electrons onto the floating gate. When electrons are dragged onto the floating gate, for example, through a Fowler-Nordheim (FN) tunnel, the threshold voltage of EPROM cells (248) increases, that is, used to adjust the gate The pole / drain increases with a voltage that conducts current. If full electrons are dragged to the floating gate At the pole, the effective cell threshold voltage will increase. Thus, for a given gate and drain bias voltage, the source-to-drain current will be reduced or stopped. This will cause the EMPROM cell (248) to block the current at that voltage level, which changes the operating state of the EPROM cell (248) from a low resistance state to a high resistance state. After the EPROM cell (248) was planned, a cell sensor (not shown in the figure) was used during operation to detect the state of the EPROM cell (248).

A specific number of examples are provided below. In this example, before planning, the resistance of one of the EPROM cells (248) may be low, for example, about 3000 ohms. During planning, a positive bias is applied to the gate and drain of the EPROM cell (248), so that a potential is generated between the drain and the control gate. The positive bias voltage applied to the drain can be close to the collapse level, for example, between 12-16 volts. Meanwhile, the source and one of the substrates disposed in the source and the drain can be set to ground. A positive voltage difference between the source and the drain draws electrons towards the drain. A large positive potential excites the electrons and when the electrons have sufficient energy, the electrons are drawn from the drain to the floating gate through the heat carrier injection, providing more negative charges to the floating gate, thereby increasing the floating gate. Effective threshold voltage. The threshold voltage of the floating gate is used to energize a crystal or one of the EPROM cells (248). Therefore, in some examples, enough electrons can be transferred to the floating gate to increase its resistance, for example, to 6000 ohms. In other words, the trapped electrons may cause a threshold voltage of approximately -5V. Therefore, when a 5V signal is applied to the control gate, no channel will be formed in the floating gate, thus increasing the resistance; the increase in resistance can be achieved by A controller (Figure 1, 106) is read to determine a logical value of the EPROM cell (248). Therefore, the resistance of the EPROM cell (248) and the corresponding logic value depend on the voltage of the floating gate.

Several EPROM cells (248) are grouped together to form an EPROM array (134). In some examples, the EPROM array (134) may be a cross-array. In this example, the EPROM cell (248) can be formed at the intersection of a first set of elements and one of a second number of elements, which form a grid of intersecting nodes that define an EPROM cell ( 248).

The EPROM array (134) can be used to store any type of data. Among other forms of data, examples of data that can be stored in the EPROM array (134) include fluid supply specific data and / or fluid identification data, fluid characteristic data, fluid usage data, print head (116) specific data, Print head (116) identification data, warranty data, print head (116) characterization data, print head (116) usage data, authentication data, security data, anti-counterfeit data (ACF), ink drop weight, emission frequency, Start printing position, acceleration information, and gyroscope information. In several examples, the EPROM array (134) is written at the time of manufacture and / or during operation of the printer cartridge (114).

In some examples, the printer cartridge (114) may be coupled to a controller (FIG. 1, 106) configured within the system (100). The controller (Figure 1, 106) receives a control signal from an external computing device (Figure 1, 102). The controller (Figure 1, 106) may be an application specific integrated circuit (ASIC) found on a printer. A computing device (FIG. 1, 102) can send a print job to the printer cartridge (114), the print job constituting text, images, or a combination thereof to be printed. The controller (Figure 1, 106) can conveniently store information to the EPROM array (134). Specifically, the controller (Figure 1, 106) can transmit at least one control signal to several EPROM cells (248). For example, the controller (FIG. 1, 106) may be coupled to the print head (116) via a control line (e.g., an identification line). Through the identification line, the controller (FIG. 1, 106) can change the logic state of the EPROM cell (248) in the EPROM array (134) to effectively store information to an EPROM array (134). For example, the controller (106) can transmit data (e.g., authentication data, security data, and print job data in addition to other types of data) to the print head (116) for storage in the EPROM array (134) on.

3A and 3B are diagrams of a printer cartridge (114) with several high-dielectric EPROM cells (248) according to an example of the principles described herein. As discussed above, the print head (116) may include a number of nozzles (124). In some examples, the print head (116) can be divided into a plurality of print dies, and each die has a plurality of nozzles (124). The print head (116) may be any type of print head (116), for example, including a print head (116) as illustrated in FIGS. 3A-3C. The examples shown in FIGS. 3A-3C are not meant to limit the description. Instead, various types of print heads (116) can be used in conjunction with the principles described herein.

The printer cartridge (114) also includes a fluid reservoir (112), a flexible cable (336), and a conductive gasket (338). In some examples, the fluid may be ink. For example, the printer cartridge (114) may be an inkjet printer cartridge, the print head (116) may be an inkjet print head, and the ink may be an inkjet ink.

The EPROM array (134) shown in Figure 3C can be similar EPROM array (134) shown in Figures 1 and 2. Specifically, the EPROM array (134) may include EPROM cells formed at least in part by using a dielectric layer formed from a high dielectric oxide material (FIG. 2, 248). The flexible cable (336) is a trace that is tightly adhered to both sides of the printer cartridge (114) and includes an EPROM array (134) and a print head (116) electrically connected by a conductive pad (338).

The printer cartridge (114) can be installed into a carriage integrated in a printer cartridge. When the printer cartridge (114) is correctly installed, the conductive pad (338) is squeezed against the corresponding electrical contact in the bracket, allowing communication with the printer and controlling the column Electrical functions of the printer cartridge (114). For example, the conductive pads (338) allow the printer to access and write to the EPROM array (134).

The EPROM array (134) can contain a variety of information, including the type of printer cartridge (114), the type of fluid contained in the printer cartridge (114), and the remaining fluid in the fluid reservoir (112). An estimate of fluid quantity, correction data, error information, and other data. In one example, the EPROM array (134) may include information about when the printer cartridge (114) should be serviced.

To generate an image, the system (Fig. 1, 100) moves a conveyor containing a printer cartridge (114) over a print medium (Fig. 1, 126). At the appropriate time, the system (Figure 1, 100) sends electrical signals to the printer cartridge (114) via electrical contacts in the carriage. The electrical signals are transmitted through the conductive pads (338) and routed through flexible cables (336) to the print head (116). The print head (116) then removes the fluid from the reservoir (112). Small droplets are ejected onto the surface of the print medium (Figure 1, 126). These small dots are combined to form an image on the surface of the print medium (Figure 1, 126).

FIG. 3C is an illustration of a print head (116) having several high-dielectric EPROM cells (FIG. 2, 248) according to an example of the principles described herein. More specifically, as illustrated here, as shown in FIG. 3A, the print head (116) may include a high-dielectric EPROM array (134), which includes several high-dielectric EPROM cells (FIG. 2, 248). The print head (116) may also include several components for depositing a fluid onto a print medium (FIG. 1, 126). For example, the print head (116) may include a number of nozzles (124). For simplicity, FIG. 3C illustrates a single nozzle (124) in detail; however, several nozzles (124) are presented on the print head (116). The print head (116) may include any number of nozzles (124). In an example where the fluid is an ink, a nozzle (124) of a first subset can eject a first color ink, and a nozzle (124) of a second subset can eject a second color ink. Nozzles (124) of another group can be reserved for inks of different colors.

A nozzle (124) may include an ejector (342), a launching chamber (344), and an opening (346). The opening (346) may allow a fluid, such as ink, to be deposited on a surface, such as a print medium (FIG. 1, 126). The launch chamber (344) may include a small amount of fluid. The ejector (342) may be a mechanism for ejecting fluid from a firing chamber (344) through an opening (346). The ejector (342) may include a firing resistor or other heating device, A piezoelectric element, or other mechanism for ejecting fluid from the launch chamber (344).

For example, the injector (342) may be an emission resistor. The hair The radio resistor is heated in response to an applied voltage. When the firing resistor is heated, a portion of the fluid in the firing chamber (344) vaporizes to form a bubble. This bubble pushes the liquid out of the opening (346) and onto the print medium (Figure 1, 126). When the vaporized fluid bubble bursts, a vacuum pressure within the launching chamber (344) draws fluid from the fluid supply (112) into the launching chamber (344), and the process is repeated. In this example, the print head (116) may be a thermal inkjet print head.

In another example, the ejector (342) may be a piezoelectric device. When a voltage is applied, the piezoelectric device changes shape. It generates a pressure pulse in the emission chamber (344), and pushes a fluid out of the opening (346) and onto the printing medium (Figure 1,126). In this example, the print head (116) may be a piezoelectric inkjet print head.

The print head (116) and the printer cartridge (114) may also include other components for performing various functions related to printing. For simplicity, in Figures 3A-3C, these components and circuits included in the print head (116) and printer cartridge (114) are not shown; however, these components may be presented in In the print head (116) and the printer cartridge (114). In some examples, the printer cartridge (114) is removable from a printing system, such as a disposable printer cartridge.

4A and 4B are diagrams of a high-dielectric EPROM cell (248) according to an example of the principles described herein. Specifically, FIG. 4A is a circuit diagram of one of the high-dielectric EPROM cells (248) and FIG. 4B is a cross-sectional view of one of the high-dielectric EPROM cells (248) layers.

EPROM cell (248) includes a control gate (450), a floating gate Electrode (452), a source electrode (456), and a drain electrode (458). In some examples, the source (456) and the drain (458) may be formed in a substrate (454). In some examples, the substrate (454) may be an n-type substrate (454) having p-doped portions forming the source (456) and the drain (458). In other examples, the substrate (454) may be a p-type substrate (454) having n-doped portions forming the source (456) and the drain (458). In some examples, the EPROM cell (248) may include a short-channel transistor. For example, the EPROM cell (248) may include a short-channel transistor including a source (456), a drain (458), and a first dielectric layer (460), such as a gate oxide. The width of the gate oxide in a short-channel EPROM transistor can be between 2.2 microns and 2.4 microns.

The floating gate (452) of the EPROM cell (248) may be separated from the substrate (454) by a first dielectric layer (460). The first dielectric layer (460) may be a gate oxide, which electrically isolates the floating gate (452) from the source (456) and the drain (458). In some examples, the gate oxide may be composed of a high dielectric constant material, for example, a high dielectric constant material used between the control gate (450) and the floating gate (452). . In some examples, the first dielectric layer (460) may be silicon dioxide, silicon carbide, and silicon nitride among other dielectric materials. In some examples, the gate oxide may be 700 Angstroms thick.

In some examples, the floating gate (452) of the EPROM cell (248) may be through a polycrystalline silicon layer (462) and a first conductive layer (464) (which is electrically coupled to the polycrystalline silicon layer (462)). And formed. In some examples, the polycrystalline silicon layer (462) may be polycrystalline silicon capable of being doped. E.g, The polycrystalline silicon layer (462) may be n-doped polycrystalline silicon. The first conductive layer (464) may be formed of a conductive material. Examples of the conductive material may include an aluminum copper alloy, an aluminum copper silicon alloy, and a tantalum aluminum alloy with an aluminum copper alloy, and a tantalum silicon nitride with an aluminum copper alloy, among other conductive materials.

The stack of the substrate (454), the first dielectric layer (460) and the polycrystalline silicon layer (462) can be shown in a circuit as a capacitor, as explained in detail in FIG. 5 below. In some examples, during the formation, the polycrystalline silicon layer (462) may be initially separated from the first conductive layer (464) by a third dielectric layer (478). The third dielectric layer (478) may be made of phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), and / or undoped silicate glass (USG) among other dielectric materials. Formed. The first conductive layer (464) may contact the polycrystalline silicon layer (462) through a gap in the third dielectric layer (478). In brief, the floating gate (452) of the EPROM cell (248) may be a first conductive layer (464) and a first conductive layer (464) electrically coupled to each other through a gap in a third dielectric layer (478). A polycrystalline silicon layer (462) is formed. The first dielectric layer (460) between the polycrystalline silicon layer (462) and the substrate (454) creates a capacitive coupling between the polycrystalline silicon layer (462) and the substrate (454).

The control gate (450) of the EPROM cell (248) may be separated from the floating gate (452) by a second dielectric layer (466). In some examples, the second dielectric layer (466) may be formed of TEOS or other dielectric materials. The control gate (450) may be provided by a second conductive layer (468). The second conductive layer (468) may be formed of a conductive material. Examples of the conductive material may include aluminum, among other conductive materials. A copper alloy, an aluminum copper silicon alloy, and a tantalum aluminum alloy having one aluminum copper alloy, and a tantalum silicon nitride having an aluminum copper alloy.

A second dielectric layer (466) between the first conductive layer (464) of the floating gate (452) and the second conductive layer (468) of the control gate (450) is on the first conductive layer (464) A capacitive coupling is generated with the second conductive layer (468). In other words, a capacitive coupling is formed between the corresponding layers by the second dielectric layer (466) and the first dielectric layer (460), and the second conductive layer (468) forms the control The gate (450), and the first conductive layer (464) and the polycrystalline silicon layer (462) form a floating gate (452) of the EPROM cell (248).

In some examples, the second dielectric layer (466) may be an oxide material having a high dielectric constant. For example, the second dielectric layer (466) may be formed of a material having a dielectric constant of at least one of six. The second dielectric layer (466) may be a nitride material having a high dielectric constant. Specifically, the second dielectric layer (466) may be made of tantalum oxide, aluminum oxide, silicon nitride (Si3N4), hafnium oxide, zirconium oxide, titanium oxide (having a dielectric constant) 80) or a combination thereof. Although specific reference is made to various materials that can be used to form the second dielectric layer (466), any suitable material can also be used.

Including a second dielectric layer (466) with a high dielectric constant allows for a thinner EPROM cell (248) by reducing the size of the second dielectric layer (466), while retaining EPROM cells ( 248). For example, as mentioned above, the resistance of the EPROM cell (248), and the corresponding logic value, depends on the voltage at the floating gate (452). The voltage at the floating gate (452) depends at least in part on the voltage of the control gate (450) Capacitors. In order to make a clearer distinction between the states of the EPROM cell (248), a larger capacitor at one of the control gates (450) is needed. Therefore, the use of a material with a smaller dielectric constant makes a larger dielectric required to achieve the required capacitance at the control gate (450). In other words, the high dielectric constant second dielectric layer (466) may allow a possibly thinner second dielectric layer (466) while maintaining a desired capacitance. For example, the second dielectric layer (466) may be a thickness between 2 and 100 nanometers. For example, the second dielectric layer (466) may be a thickness between 5 and 15 nanometers. In some examples, the thickness of the second dielectric layer (466) can be manipulated to achieve a desired capacitance.

In some examples, the second dielectric layer (466) may have a capacitance of at least 0.15 picofarad. As described above, when using a second dielectric layer (466) of a high dielectric material, such as an oxide or nitride of aluminum, tantalum, silicon, or a combination thereof, for a given capacitance, a Small EPROM cells (248) can be formed. In some examples, at least one of the first conductive layer (464) and the second conductive layer (468) may be smaller than 400 square microns. For example, at least one of the first conductive layer (464) and the second conductive layer (468) may be smaller than 100 square microns. In other words, in some examples, the dielectric constant of the second dielectric layer (466) may be sufficiently high that the area of the second dielectric layer (466) may be smaller than 400 square microns and the The thickness can be between 2 nm and 100 nm thick, with a capacitance of at least 0.15 picofarad.

In some examples, the second dielectric layer (466) may be controlled by a ratio of a control gate (450) capacitance to a floating gate (452) capacitance. Define. The control gate (450) capacitance relates to the capacitance generated by the first conductive layer (464) / the second dielectric layer (466) / the second conductive layer (468), and the floating gate (452) capacitance involves Capacitance generated by the substrate (454) / first dielectric layer (460) / polycrystalline silicon layer (462). In other words, the capacitance of the control gate (450) and the floating gate (452) can be defined by the properties of the dielectric layers (462, 466). For example, the separation of the first conductive layer (464) from the second conductive layer (468) by the second dielectric layer (466) produces a capacitive coupling of the control gate (450). In other words, parallel-opposed capacitor plates are formed in the first conductive layer (464) and the second conductive layer (468). Similarly, the separation of the polycrystalline silicon layer (462) from the substrate (454) by the first dielectric layer (460) produces a capacitive type of floating gate (452), source (456), and drain (458). coupling.

Returning to the ratio, the EPROM cell (248) according to this description may have a ratio of the control gate (450) capacitance and the floating gate (452) capacitance of at least two. In this example, the floating gate (452) may have a capacitance of 70 femtofarads. Having a conduction ratio of at least 2 as described above can further increase the voltage of the floating gate (452) and improve the control of the EPROM cell (248). In other words, the ratio as described above can further increase the gap between the planned and unplanned states by increasing the floating gate (452) voltage. For example, as shown in Figure 5, the EPROM cell (248) can be drawn as a circuit similar to a voltage divider. Therefore, relative to an applied voltage (572), V _dd applied to the control gate (Figure 4, 450), the voltage (570), V _float , seen at the floating gate (Figure 4, 452), can be obtained by The following Equation 1 is shown.

In Equation 1, C _cg indicates the control gate capacitance (574), and C _fg indicates the floating gate capacitance (576). Accordingly, a larger capacitance control gate (574) results in a large voltage seen one (570) pole (FIG. 4,452) in the floating gate, V _float, which increases the EPROM cell element (248) of the programming resistor.

FIG. 6 is a cross-sectional view of a print head (116) according to an example of the principles described herein. The print head (116) includes a high-dielectric EPROM cell (248), a memristor (680), and a Emission resistor (342). As described above, the print head (116) may include an EPROM cell (248) including a source (456) and a drain (458). The source (456) and the drain (458) may be separated from the polycrystalline silicon layer (462-1) by a first dielectric layer (460-1).

As mentioned above, the EPROM cell (248) also includes a first conductive layer (464), a second dielectric layer (466), and a second conductive layer (468). In some examples, the second conductive layer (468) may include multiple sub-layers with different oxidation properties. For example, the first sublayer (468-1) may include a tantalum aluminum alloy and the second sublayer (468-2) may include an aluminum copper alloy. In some examples, as shown in Figure 6, the EPROM cell (248) layer may be planar.

In some examples, at least one of these layers may have the same material properties, or the same material as other components in the print head (116). For example, the print head (116) may include a memristor (680) including a first electrode (684), a switching oxide (686) disposed on top of the first electrode (684), and A second electrode (688) is disposed on top of the switching oxide (686). In some examples, as shown in FIG. 6, the second electrode (688) may be a double-layer electrode, that is, it may include multiple material layers. For example, the second electrode may include a first sub-layer (688-1) and a second sub-layer (688-2).

In this example, the first conductive layer (464) of the EPROM cell (248) may be the same material, and in some cases is formed from the same layer of the same material, such as the first electrode of a memristor (680) (684) and at least one of a first layer (690) of a transmit resistor (342). Similarly, the second dielectric layer (466) of the EPROM cell (248) may be the same material, and in some cases is formed from the same layer of the same material, such as the switching oxide (686) of a memristor. Furthermore, the second conductive layer (468) of the EPROM cell (248) may be the same material, and in some cases is formed of the same layer of the same material, such as the second electrode of the memristor (680) ( 688) and at least one of a second layer (692) and / or a third layer (694) of the emission resistor (342).

More specifically, each of the first EPROM sublayer (468-1), the second sublayer (688-1) of the second electrode (688), and a second layer (692) of the emission resistor (342). Each may be a similar material, such as a tantalum aluminum alloy. In some examples, each of the first EPROM sublayer (468-1), the second sublayer (688-1) of the second electrode (688), and a second layer (692) of the emission resistor (342) This can be the same material layer. In other words, these components can be formed simultaneously by depositing a single material layer.

Similarly, each of the second EPROM sublayer (468-2), the second sublayer (688-2) of the second electrode (688), and a third layer (694) of the emission resistor (342) can be It is formed from the same material, for example, an aluminum-copper alloy. In some examples, each of the second EPROM sublayer (468-2), the second sublayer (688-2) of the second electrode (688), and a third layer (694) of the emission resistor (342) This can be the same material layer. In other words, these components can borrow simultaneously It is formed by depositing a single material layer.

The print head (116) may also include several passive layers (696, 699), which may have a thickness from 3000 to 6000 Angstroms. Although different components may share a print head (116), the components may be associated with different transistors. For example, a first transistor (698-1) corresponding to the gate (460-1) and the first dielectric layer (462-1) may be adopted by the EPROM cell (248), and corresponding to the gate ( 460-2) and a second transistor (698-2) of the first dielectric layer (462-2) may not be used by the EPROM cell (248). Each transistor may be different. For example, the second transistor (698-2) may be a transistor having a width of about 2.8 microns and the first transistor (698-1) may have a width between 2.2 and 2.4 microns. One of the widths between the short channel transistors.

By using these layers together, multiple layers of different components can be formed simultaneously, thus reducing the operation of forming the components of a print head (116). In addition, stacks used to form high-dielectric EPROM cells (248) can currently be used in other components, such as memristors (680) and emission resistors (342), high-dielectric EPROM cells ( 248) can be formed without the need for additional manufacturing equipment or processing procedures.

Some examples of this disclosure are for a printer cartridge (FIG. 1, 114) and a print head (FIG. 1, 116) having one of several high-dielectric EPROM cells (FIG. 2, 248), which are not provided in Several previously provided advantages include the ability to generate an EPROM memory device that is small and has a high coupling ratio, which results in an improved memory device planning ratio; reduced coverage of an EPROM cell (Figure 2, 248) Zone to free up valuable silicon space for other components and provide backward compatibility with existing printers. However, its It is expected that the devices disclosed herein can provide useful fulfillment of other claims as well as the deficiencies of several technical areas. The systems and methods disclosed herein should therefore not be understood as dealing with any particular issue discussed.

The previous description has been presented to illustrate and illustrate examples of the principles described. This illustration is not intended to exclude or limit these principles to any precise form disclosed. Many modifications and variations are possible in light of the above teachings.

248‧‧‧High Dielectric EPROM Cell

454‧‧‧ Substrate

456‧‧‧Source

458‧‧‧ Drain

460‧‧‧First dielectric layer

462‧‧‧Polycrystalline silicon layer

464‧‧‧The first conductive layer

466‧‧‧Second dielectric layer

468‧‧‧Second conductive layer

478‧‧‧ third dielectric layer

Claims (15)

A printing head having several high-dielectric erasable and programmable read-only memory (EPROM) cells, the printing head includes: a plurality of nozzles for depositing a quantity of fluid onto a printing medium, Each nozzle includes: a firing chamber for holding the quantity of fluid; an opening for distributing the quantity of fluid to the printing medium; and an ejector for passing through the opening and The amount of fluid is ejected; and several EPROM cells, each EPROM cell includes: a substrate having a source and a drain disposed therein; and a floating gate through a first dielectric And a control gate separated from the floating gate by a second dielectric layer; wherein the second dielectric layer includes a high dielectric constant material. A print head as claimed in claim 1, wherein the fluid is inkjet ink. The printing head as claimed in claim 1, wherein the second dielectric layer comprises a high dielectric constant oxide material, a high dielectric constant nitride material, or a combination thereof. For example, the print head of claim 1, wherein: the floating gate includes: A polycrystalline silicon layer; and a first conductive layer in contact with the polycrystalline silicon layer; and the control gate includes a second conductive layer. The print head of claim 1, wherein the second dielectric layer has a dielectric constant greater than one. For example, the print head of claim 1, wherein a ratio of a capacitance of the second dielectric layer to a capacitance of the first dielectric layer is greater than two. The printing head of claim 1, wherein the second dielectric layer comprises aluminum oxide, tantalum oxide, or a combination thereof. A printer cartridge includes a plurality of high-dielectric erasable and programmable read-only memory (EPROM) cells. The ink cartridge includes: a fluid supply device; and a print head for receiving the The fluid from the fluid supply is deposited on a print medium, the print head includes; several EPROM cells, each EPROM cell includes: a short-channel EPROM transistor, which includes a source, a A drain and a gate oxide; a polycrystalline silicon layer separated from the substrate by the gate oxide; a first conductive layer separated from the polycrystalline silicon layer by a third dielectric layer Wherein: the first conductive layer contacts the polycrystalline silicon layer through a gap in the third dielectric layer; and the first conductive layer and the polycrystalline silicon layer form the A floating gate of an EPROM cell; and a second conductive layer separated from the first conductive layer by a second dielectric layer, wherein the second conductive layer forms a control gate of the EPROM cell And the second dielectric layer has a high dielectric constant. The printer cartridge of claim 8, wherein: the fluid is inkjet ink; the printer cartridge is an inkjet printer cartridge; and the printhead is an inkjet printhead. The printer cartridge of claim 8, wherein the second dielectric layer is between 2 nm and 100 nm thick. The printer cartridge of claim 8, wherein one of the first conductive layer and the second conductive layer has an area of less than 400 square microns. The printer cartridge of claim 8, wherein a capacitance of one of the second dielectric layers is greater than 0.15 picofarad. The printer cartridge of claim 8, wherein the second dielectric layer comprises aluminum oxide, tantalum oxide, or a combination thereof. The printer cartridge of claim 8, further comprising a memristor, the memristor comprising: a first electrode; a switching oxide disposed on top of the first electrode; and a first Two electrodes arranged on top of the switching oxide; Wherein the switching oxide of the memristor comprises the same material as the second dielectric layer of the several EPROM cells. The printer cartridge of claim 14, wherein the switching oxide of the memristor is formed in a same layer as the second dielectric layer of the several EPROM cells.