TWI612344B - Image sensor - Google Patents

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TWI612344B
TWI612344B TW106109591A TW106109591A TWI612344B TW I612344 B TWI612344 B TW I612344B TW 106109591 A TW106109591 A TW 106109591A TW 106109591 A TW106109591 A TW 106109591A TW I612344 B TWI612344 B TW I612344B
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infrared light
layer
color filter
receiving portion
visible light
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TW106109591A
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TW201835615A (en
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謝於叡
陳柏男
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奇景光電股份有限公司
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Abstract

一種影像感測器,包含可見光接收部與紅外光接收部。可見光接收部用以接收可見光,紅外光接收部用以接收紅外光。可見光接收部包含:紅外光截止濾色層、多個主彩色濾色器與多個次彩色濾色器。主彩色濾色器與次彩色濾色器設置於紅外光截止濾色層上。紅外光接收部包含:多個第一紅外光穿透濾色器與多個第二紅外光穿透濾色器。第二紅外光穿透濾色器設置於第一紅外光穿透濾色器上。主彩色濾色器的每一者佔據第一面積。次彩色濾色器與第二紅外光穿透濾色器佔據第二面積。第一面積與第二面積實質上相等。 An image sensor includes a visible light receiving portion and an infrared light receiving portion. The visible light receiving portion is configured to receive visible light, and the infrared light receiving portion is configured to receive infrared light. The visible light receiving unit includes an infrared light cut filter layer, a plurality of main color filters, and a plurality of sub color filters. The main color filter and the sub color filter are disposed on the infrared cut filter layer. The infrared light receiving portion includes: a plurality of first infrared light penetrating color filters and a plurality of second infrared light penetrating color filters. The second infrared light penetrating color filter is disposed on the first infrared light penetrating color filter. Each of the main color filters occupies the first area. The secondary color filter and the second infrared light penetrating color filter occupy a second area. The first area is substantially equal to the second area.

Description

影像感測器 Image sensor

本發明是有關於一種影像感測器,且特別是有關於一種具有紅外光感測功能的影像感測器。 The present invention relates to an image sensor, and more particularly to an image sensor having an infrared light sensing function.

在相機的影像感測器中通常使用濾色器來選擇性地傳輸特定波長的光線至光感測層。對傳統的相機而言,通常形成拜爾濾色器(Bayer filter)於光感測層上。拜爾濾色器是透過在每個顏色像素上安排紅色濾色器、綠色濾色器與藍色濾色器之其中一者而形成的彩色濾色陣列。拜爾濾色器的佈局有50%是綠色濾色器,25%是紅色濾色器,25%是藍色濾色器。因為每個像素產生代表光線之某一顏色成分的強度之訊號,而非代表全範圍的顏色,所以對每個像素執行去馬賽克(demosaicing)法來內插一組紅色、綠色與藍色的值。然而,拜爾濾色器可能會增加紅外光的雜訊。此外,傳統相機的影像感測器不具有紅外光感測功能。 Color filters are commonly used in camera image sensors to selectively transmit light of a particular wavelength to the light sensing layer. For conventional cameras, a Bayer filter is typically formed on the light sensing layer. A Bayer color filter is a color filter array formed by arranging one of a red color filter, a green color filter, and a blue color filter on each color pixel. The layout of the Bayer filter is 50% green, 25% red, and 25% blue. Because each pixel produces a signal representative of the intensity of a certain color component of the light, rather than representing the full range of colors, a demosaicing method is performed on each pixel to interpolate a set of red, green, and blue values. . However, Bayer filters may increase the noise of infrared light. In addition, the image sensor of a conventional camera does not have an infrared light sensing function.

本發明提出一種影像感測器,包含可見光接收部與紅外光接收部。可見光接收部用以接收可見光,紅外光 接收部用以接收紅外光。可見光接收部包含:紅外光截止濾色層、多個主彩色濾色器與多個次彩色濾色器。主彩色濾色器與次彩色濾色器設置於紅外光截止濾色層上。紅外光接收部包含:多個第一紅外光穿透濾色器與多個第二紅外光穿透濾色器。第二紅外光穿透濾色器設置於第一紅外光穿透濾色器上。主彩色濾色器的每一者佔據第一面積。次彩色濾色器與第二紅外光穿透濾色器佔據第二面積。第一面積與第二面積實質上相等。 The invention provides an image sensor comprising a visible light receiving portion and an infrared light receiving portion. The visible light receiving portion is for receiving visible light and infrared light The receiving unit is configured to receive infrared light. The visible light receiving unit includes an infrared light cut filter layer, a plurality of main color filters, and a plurality of sub color filters. The main color filter and the sub color filter are disposed on the infrared cut filter layer. The infrared light receiving portion includes: a plurality of first infrared light penetrating color filters and a plurality of second infrared light penetrating color filters. The second infrared light penetrating color filter is disposed on the first infrared light penetrating color filter. Each of the main color filters occupies the first area. The secondary color filter and the second infrared light penetrating color filter occupy a second area. The first area is substantially equal to the second area.

根據本發明之一實施例,上述可見光接收部更包含可見光光二極體,紅外光截止濾色層設置於可見光光二極體上,其中可見光穿過主彩色濾色器、次彩色濾色器以及紅外光截止濾色層而被可見光光二極體所接收。 According to an embodiment of the invention, the visible light receiving portion further includes a visible light photodiode, and the infrared light blocking color filter layer is disposed on the visible light photodiode, wherein the visible light passes through the main color filter, the secondary color filter, and the infrared The light cuts off the color filter layer and is received by the visible light photodiode.

根據本發明之一實施例,上述紅外光接收部更包含紅外光光二極體,第一紅外光穿透濾色器設置於可見光光二極體上,其中紅外光穿過第二紅外光穿透濾色器以及第一紅外光穿透濾色器而被紅外光光二極體所接收。 According to an embodiment of the present invention, the infrared light receiving portion further includes an infrared light photodiode, and the first infrared light penetrating color filter is disposed on the visible light photodiode, wherein the infrared light passes through the second infrared light penetrating filter. The color filter and the first infrared light pass through the color filter and are received by the infrared light photodiode.

根據本發明之一實施例,上述影像感測器更包含晶圓層,位於紅外光光二極體與可見光光二極體上,其中晶圓層的第一部份位於可見光接收部內,且晶圓層的第二部份位於紅外光接收部內。 According to an embodiment of the invention, the image sensor further includes a wafer layer on the infrared light diode and the visible light diode, wherein the first portion of the wafer layer is located in the visible light receiving portion, and the wafer layer The second part is located in the infrared light receiving portion.

根據本發明之一實施例,上述晶圓層的第一部份位於紅外光截止濾色層與可見光光二極體之間,且晶圓層的第二部份位於第一紅外光穿透濾色器與紅外光光二極體之間。 According to an embodiment of the invention, the first portion of the wafer layer is between the infrared light-cutting filter layer and the visible light diode, and the second portion of the wafer layer is located at the first infrared light penetrating color filter. Between the device and the infrared light diode.

根據本發明之一實施例,上述主彩色濾色器包含紅色濾色單元、綠色濾色單元以及藍色濾色單元。 According to an embodiment of the present invention, the main color filter includes a red color filter unit, a green color filter unit, and a blue color filter unit.

根據本發明之一實施例,上述次彩色濾色器的每一者包含紅色像素、綠色像素以及藍色像素。 According to an embodiment of the invention, each of the sub-color filters includes a red pixel, a green pixel, and a blue pixel.

根據本發明之一實施例,上述影像感測器更包含平坦層,用以提供平坦表面,其中主彩色濾色器、次彩色濾色器與第二紅外光穿透濾色器設置於平坦表面上。 According to an embodiment of the invention, the image sensor further comprises a flat layer for providing a flat surface, wherein the main color filter, the secondary color filter and the second infrared light penetrating color filter are disposed on the flat surface on.

根據本發明之一實施例,上述平坦層位於可見光接收部與紅外光接收部內。 According to an embodiment of the invention, the flat layer is located in the visible light receiving portion and the infrared light receiving portion.

根據本發明之一實施例,上述影像感測器更包含微透鏡層,用以聚集可見光與紅外光。 According to an embodiment of the invention, the image sensor further includes a microlens layer for collecting visible light and infrared light.

根據本發明之一實施例,上述微透鏡層位於影像感測器的最上層。 According to an embodiment of the invention, the microlens layer is located at the uppermost layer of the image sensor.

根據本發明之一實施例,上述微透鏡層位於可見光接收部與紅外光接收部內。 According to an embodiment of the invention, the microlens layer is located in the visible light receiving portion and the infrared light receiving portion.

根據本發明之一實施例,上述影像感測器更包含間隔層,用以提供平坦表面,其中微透鏡層設置於平坦表面上。 According to an embodiment of the invention, the image sensor further includes a spacer layer for providing a flat surface, wherein the microlens layer is disposed on the flat surface.

根據本發明之一實施例,上述間隔層位於可見光接收部與紅外光接收部內。 According to an embodiment of the invention, the spacer layer is located in the visible light receiving portion and the infrared light receiving portion.

100‧‧‧影像感測器 100‧‧‧Image sensor

110‧‧‧可見光接收部 110‧‧‧ Visible light receiving department

112‧‧‧可見光感測層 112‧‧‧ Visible light sensing layer

114‧‧‧紅外光截止濾色層 114‧‧‧Infrared light cut-off filter

116a、116b、116c‧‧‧主彩色濾色器 116a, 116b, 116c‧‧‧ main color filter

118r、118b、118g‧‧‧次彩色濾色器 118r, 118b, 118g‧‧‧ color filters

120‧‧‧紅外光接收部 120‧‧‧Infrared light receiving department

122‧‧‧紅外光感測層 122‧‧‧Infrared light sensing layer

124‧‧‧第一紅外光穿透濾色器 124‧‧‧First infrared light penetrating color filter

126‧‧‧第二紅外光穿透濾色器 126‧‧‧Second infrared light penetrating color filter

A-A’‧‧‧切線 A-A’‧‧‧ tangent

ML‧‧‧微透鏡層 ML‧‧‧microlens layer

PL‧‧‧平坦層 PL‧‧‧flat layer

SP‧‧‧間隔層 SP‧‧‧ spacer

WA‧‧‧晶圓層 WA‧‧‧ wafer layer

從以下結合所附圖式所做的詳細描述,可對本揭露之態樣有更佳的了解。需注意的是,根據業界的標準實 務,各特徵並未依比例繪示。事實上,為了使討論更為清楚,各特徵的尺寸都可任意地增加或減少。 A better understanding of the aspects of the present disclosure can be obtained from the following detailed description taken in conjunction with the drawings. It should be noted that according to industry standards The features are not drawn to scale. In fact, in order to make the discussion clearer, the dimensions of each feature can be arbitrarily increased or decreased.

[圖1]係繪示根據本發明的實施例之影像感測器的上視圖。 FIG. 1 is a top view of an image sensor according to an embodiment of the present invention.

[圖2]係繪示根據本發明的實施例之沿著圖1中的切線所取得的部分的影像感測器的剖視圖。 2 is a cross-sectional view showing an image sensor taken along a tangent line in FIG. 1 according to an embodiment of the present invention.

本揭露提供了許多不同的實施例或例子,用以實作此揭露的不同特徵。為了簡化本揭露,一些元件與佈局的具體例子會在以下說明。當然,這些僅僅是例子而不是用以限制本揭露。例如,若在後續說明中提到了第一特徵形成在第二特徵上面,這可包括第一特徵與第二特徵是直接接觸的實施例;這也可以包括第一特徵與第二特徵之間還形成其他特徵的實施例,這使得第一特徵與第二特徵沒有直接接觸。此外,本揭露可能會在各種例子中重複圖示符號及/或文字。此重複是為了簡明與清晰的目的,但本身並不決定所討論的各種實施例及/或設置之間的關係。 The disclosure provides many different embodiments or examples for implementing the various features disclosed herein. In order to simplify the disclosure, specific examples of components and layouts are described below. Of course, these are merely examples and are not intended to limit the disclosure. For example, if it is mentioned in the following description that the first feature is formed on the second feature, this may include an embodiment in which the first feature is in direct contact with the second feature; this may also include between the first feature and the second feature. Embodiments of other features are formed that make the first feature not in direct contact with the second feature. Moreover, the disclosure may repeat the symbols and/or text in various examples. This repetition is for the purpose of brevity and clarity, but does not in itself determine the relationship between the various embodiments and/or arrangements discussed.

再者,在空間上相對的用語,例如底下、下面、較低、上面、較高等,是用來容易地解釋在圖示中一個元件或特徵與另一個元件或特徵之間的關係。這些空間上相對的用語除了涵蓋在圖示中所繪的方向,也涵蓋了裝置在使用或操作上不同的方向。這些裝置也可被旋轉(例如旋轉90度或旋轉至其他方向),而在此所使用的空間上相對的描述同樣 也可以有相對應的解釋。 Furthermore, spatially relative terms such as "lower", "lower", """"""""""" These spatially relative terms are intended to encompass different orientations of the device in use or operation, in addition to the orientation depicted in the drawings. These devices can also be rotated (eg rotated 90 degrees or rotated to other directions), and the spatially relative description used here is the same There can also be corresponding explanations.

圖1係繪示根據本發明的實施例之影像感測器100的上視圖。圖2係繪示根據本發明的實施例之沿著圖1中的切線A-A’所取得的部份的影像感測器100的剖視圖。如圖2所示,影像感測器100包含可見光接收部110與紅外光接收部120。可見光接收部110用以接收可見光,紅外光接收部120用以接收紅外光。 1 is a top view of image sensor 100 in accordance with an embodiment of the present invention. 2 is a cross-sectional view of the image sensor 100 taken along the line A-A' of FIG. 1 in accordance with an embodiment of the present invention. As shown in FIG. 2, the image sensor 100 includes a visible light receiving portion 110 and an infrared light receiving portion 120. The visible light receiving unit 110 is configured to receive visible light, and the infrared light receiving unit 120 is configured to receive infrared light.

如圖1與圖2所示,可見光接收部110包含可見光感測層112、紅外光截止(IR Cut)濾色層114、多個主彩色濾色器116a、116b、116c與多個次彩色濾色器118r、118g、118b。紅外光截止濾色層114、主彩色濾色器116a、116b、116c與次彩色濾色器118r、118g、118b皆設置於可見光感測層112上以提供彩色光給可見光感測層112。可見光感測層112用以接收可見光來相應地產生主影像訊號。在本實施例中,可見光感測層112包含至少一可見光光二極體以感測彩色光。可見光光二極體可為互補式金氧半導體(complementary metal oxide semiconductor,CMOS)二極體。然而,本發明的實施例不限於此。 As shown in FIG. 1 and FIG. 2, the visible light receiving portion 110 includes a visible light sensing layer 112, an infrared light cutoff (IR Cut) color filter layer 114, a plurality of main color filters 116a, 116b, 116c and a plurality of secondary color filters. Colors 118r, 118g, 118b. The infrared light cut filter layer 114, the main color filters 116a, 116b, 116c and the secondary color filters 118r, 118g, 118b are all disposed on the visible light sensing layer 112 to provide colored light to the visible light sensing layer 112. The visible light sensing layer 112 is configured to receive visible light to generate a main image signal accordingly. In this embodiment, the visible light sensing layer 112 includes at least one visible light diode to sense colored light. The visible light photodiode may be a complementary metal oxide semiconductor (CMOS) diode. However, embodiments of the invention are not limited thereto.

主彩色濾色器116a、116b、116c與次彩色濾色器118r、118g、118b用以提供彩色光。紅外光截止濾色層114用以截斷紅外光。換句話說,當彩色光穿過紅外光截止濾色層114時,紅外光截止濾色層114可阻斷紅外光的傳輸。在本實施例中,紅外光截止濾色層114阻斷波長大於850奈米的光,但本發明的實施例不限於此。再者,在本實施例 中,主彩色濾色器116a、116b、116c與次彩色濾色器118r、118g、118b位於紅外光截止濾色層114上,且紅外光截止濾色層114位於可見光感測層112上,但本發明的實施例不限於此。 Main color filters 116a, 116b, 116c and sub-color filters 118r, 118g, 118b are used to provide colored light. The infrared light cut filter layer 114 is used to intercept infrared light. In other words, when the colored light passes through the infrared light cut-off color filter layer 114, the infrared light cut-off color filter layer 114 blocks the transmission of the infrared light. In the present embodiment, the infrared light cut filter layer 114 blocks light having a wavelength of more than 850 nm, but embodiments of the present invention are not limited thereto. Furthermore, in this embodiment The main color filters 116a, 116b, and 116c and the sub color filters 118r, 118g, and 118b are located on the infrared light-cutting color filter layer 114, and the infrared light-cutting color filter layer 114 is located on the visible light sensing layer 112. Embodiments of the invention are not limited thereto.

如圖2所示,紅外光接收部120包含紅外光感測層122、多個第一紅外光穿透(IR Pass)濾色器124與多個第二紅外光穿透濾色器126。第一紅外光穿透濾色器124與第二紅外光穿透濾色器126設置於紅外光感測層122上以提供紅外光給紅外光感測層122。紅外光感測層122用以接收紅外光來相應地產生輔助影像訊號。在本實施例中,紅外光感測層122包含至少一紅外光光二極體以感測紅外光。紅外光光二極體可為互補式金氧半導體二極體。然而,本發明的實施例不限於此。 As shown in FIG. 2, the infrared light receiving portion 120 includes an infrared light sensing layer 122, a plurality of first infrared light penetrating (IR Pass) color filters 124, and a plurality of second infrared light penetrating color filters 126. The first infrared light penetrating color filter 124 and the second infrared light penetrating color filter 126 are disposed on the infrared light sensing layer 122 to provide infrared light to the infrared light sensing layer 122. The infrared light sensing layer 122 is configured to receive infrared light to generate an auxiliary image signal accordingly. In this embodiment, the infrared light sensing layer 122 includes at least one infrared light diode to sense infrared light. The infrared light photodiode can be a complementary MOS diode. However, embodiments of the invention are not limited thereto.

第一紅外光穿透濾色器124與第二紅外光穿透濾色器126用以截斷可見光。換句話說,當光穿過第一紅外光穿透濾色器124與第二紅外光穿透濾色器126時,第一紅外光穿透濾色器124與第二紅外光穿透濾色器126可阻斷可見光的傳輸。在本實施例中,第一紅外光穿透濾色器124與第二紅外光穿透濾色器126阻斷波長小於850奈米的光,但本發明的實施例不限於此。再者,在本實施例中,第一紅外光穿透濾色器124設置於第二紅外光穿透濾色器126與紅外光感測層122之間,但本發明的實施例不限於此。 The first infrared light penetrating color filter 124 and the second infrared light penetrating the color filter 126 are used to intercept visible light. In other words, when light passes through the first infrared light penetrating color filter 124 and the second infrared light penetrating the color filter 126, the first infrared light penetrating the color filter 124 and the second infrared light penetrating the color filter The 126 can block the transmission of visible light. In the present embodiment, the first infrared light penetrating color filter 124 and the second infrared light penetrating color filter 126 block light having a wavelength of less than 850 nm, but embodiments of the present invention are not limited thereto. Furthermore, in the embodiment, the first infrared light penetrating color filter 124 is disposed between the second infrared light penetrating color filter 126 and the infrared light sensing layer 122, but embodiments of the present invention are not limited thereto. .

如圖2所示,可見光接收部110與紅外光接收部120更包含晶圓層WA、平坦層PL、間隔層SP以及微透鏡層 ML。晶圓層WA用以提供基板以使紅外光截止濾色層114與第一紅外光穿透濾色器124形成於其上。在本實施例中,晶圓層WA為玻璃晶圓,但本發明的實施例不限於此。 As shown in FIG. 2, the visible light receiving portion 110 and the infrared light receiving portion 120 further include a wafer layer WA, a flat layer PL, a spacer layer SP, and a microlens layer. ML. The wafer layer WA is used to provide a substrate on which the infrared light cut filter layer 114 and the first infrared light penetrating color filter 124 are formed. In the present embodiment, the wafer layer WA is a glass wafer, but embodiments of the present invention are not limited thereto.

如圖1與圖2所示,平坦層PL形成於紅外光截止濾色層114與第一紅外光穿透濾色器124上以提供平坦表面使主彩色濾色器116a、116b、116c、次彩色濾色器118r、118g、118b與第二紅外光穿透濾色器126設置於其上。平坦層PL亦提供良好界面以協助主彩色濾色器116a、116b、116c、次彩色濾色器118r、118g、118b與第二紅外光穿透濾色器126貼附於平坦層PL上。應注意的是,在本實施例中,紅外光截止濾色層114的厚度與第一紅外光穿透濾色器124的厚度實質上相等。 As shown in FIGS. 1 and 2, a flat layer PL is formed on the infrared light cut filter layer 114 and the first infrared light penetrating color filter 124 to provide a flat surface such that the main color filters 116a, 116b, 116c, and times Color filters 118r, 118g, 118b and a second infrared light penetrating color filter 126 are disposed thereon. The flat layer PL also provides a good interface to assist the primary color filters 116a, 116b, 116c, the secondary color filters 118r, 118g, 118b and the second infrared light penetrating color filter 126 to be attached to the flat layer PL. It should be noted that in the present embodiment, the thickness of the infrared light cut filter layer 114 is substantially equal to the thickness of the first infrared light penetrating color filter 124.

間隔層SP位於主彩色濾色器116a、116b、116c、次彩色濾色器118r、118g、118b與第二紅外光穿透濾色器126上以提供平坦表面使微透鏡層ML設置於其上。 應注意的是,在本實施例中,主彩色濾色器116a、116b、116c的厚度、次彩色濾色器118r、118g、118b的厚度與第二紅外光穿透濾色器126的厚度實質上相等。微透鏡層ML用以聚集紅外光與可見光。具體而言,當影像感測器100用以感測物體時,透過微透鏡層ML來聚焦物體。再者,可透過改變微透鏡層ML的厚度來調整影像感測器100的聚焦。 The spacer layer SP is located on the main color filters 116a, 116b, 116c, the secondary color filters 118r, 118g, 118b and the second infrared light penetrating color filter 126 to provide a flat surface on which the microlens layer ML is disposed. . It should be noted that in the present embodiment, the thickness of the main color filters 116a, 116b, 116c, the thickness of the sub-color filters 118r, 118g, 118b and the thickness of the second infrared light penetrating color filter 126 are substantially Equal on. The microlens layer ML is used to collect infrared light and visible light. Specifically, when the image sensor 100 is used to sense an object, the object is focused through the microlens layer ML. Furthermore, the focus of the image sensor 100 can be adjusted by changing the thickness of the microlens layer ML.

應注意的是,微透鏡層ML的材料可為環氧樹脂、光學膠、聚甲基丙烯酸甲酯(polymethylmethacrylates,PMMAs)、聚氨酯塑膠材料(polyurethanes,PUs)、聚二甲基 矽氧烷(polydimethylsiloxane,PDMS)或其他熱硬化或光硬化之透光材料,但本發明的實施例不限於此。 It should be noted that the material of the microlens layer ML may be epoxy resin, optical glue, polymethylmethacrylates (PMMAs), polyurethane plastics (PUs), polydimethyl. A polydimethylsiloxane (PDMS) or other thermally hardened or photohardenable light transmissive material, but embodiments of the invention are not limited thereto.

在本實施例中,主彩色濾色器116a、116b、116c分別包含紅色濾色單元、藍色濾色單元以及綠色濾色單元,但本發明的實施例不限於此。在本實施例中,次彩色濾色器118r、118g、118b的每一者包含紅色像素、藍色像素以及綠色像素。如圖1所示,主彩色濾色器116a、116b、116c的每一者,例如:主彩色濾色器116a、主彩色濾色器116b或主彩色濾色器116c,佔據第一面積。次彩色濾色器118r、118g、118b與第二紅外光穿透濾色器126佔據第二面積。如圖1所示,第一面積實質上相等於第二面積。 In the present embodiment, the main color filters 116a, 116b, 116c respectively include a red color filter unit, a blue color filter unit, and a green color filter unit, but the embodiment of the present invention is not limited thereto. In the present embodiment, each of the secondary color filters 118r, 118g, 118b includes a red pixel, a blue pixel, and a green pixel. As shown in FIG. 1, each of the main color filters 116a, 116b, 116c, for example, the main color filter 116a, the main color filter 116b, or the main color filter 116c, occupies the first area. The secondary color filters 118r, 118g, 118b and the second infrared light penetrating color filter 126 occupy a second area. As shown in Figure 1, the first area is substantially equal to the second area.

相較於使用拜爾濾色器的傳統影像感測器,本發明之影像感測器100因為第一紅外光穿透濾色器124與第二紅外光穿透濾色器126設置於紅外光接收部120內,而具有紅外光感測功能。此外,因為紅外光截止濾色層114設置於可見光接收部110內,本發明之影像感測器100所接收到的可見光具有較小的雜訊。 Compared with the conventional image sensor using the Bayer color filter, the image sensor 100 of the present invention is disposed in the infrared light because the first infrared light penetrating color filter 124 and the second infrared light penetrating color filter 126 are disposed. The receiving unit 120 has an infrared light sensing function. In addition, since the infrared light cut filter layer 114 is disposed in the visible light receiving portion 110, the visible light received by the image sensor 100 of the present invention has less noise.

以上概述了數個實施例的特徵,因此熟習此技藝者可以更了解本揭露的態樣。熟習此技藝者應了解到,其可輕易地把本揭露當作基礎來設計或修改其他的製程與結構,藉此實現和在此所介紹的這些實施例相同的目標及/或達到相同的優點。熟習此技藝者也應可明白,這些等效的建構並未脫離本揭露的精神與範圍,並且他們可以在不脫離本揭露精神與範圍的前提下做各種的改變、替換與變動。 The features of several embodiments are summarized above, and those skilled in the art will be able to understand the aspects of the disclosure. Those skilled in the art will appreciate that the present disclosure can be readily utilized as a basis for designing or modifying other processes and structures, thereby achieving the same objectives and/or achieving the same advantages as the embodiments described herein. . It should be understood by those skilled in the art that the invention may be made without departing from the spirit and scope of the disclosure.

100‧‧‧影像感測器 100‧‧‧Image sensor

110‧‧‧可見光接收部 110‧‧‧ Visible light receiving department

112‧‧‧可見光感測層 112‧‧‧ Visible light sensing layer

114‧‧‧紅外光截止濾色層 114‧‧‧Infrared light cut-off filter

116c‧‧‧主彩色濾色器 116c‧‧‧Main color filter

118r‧‧‧次彩色濾色器 118r‧‧ color color filter

120‧‧‧紅外光接收部 120‧‧‧Infrared light receiving department

122‧‧‧紅外光感測層 122‧‧‧Infrared light sensing layer

124‧‧‧第一紅外光穿透濾色器 124‧‧‧First infrared light penetrating color filter

126‧‧‧第二紅外光穿透濾色器 126‧‧‧Second infrared light penetrating color filter

ML‧‧‧微透鏡層 ML‧‧‧microlens layer

PL‧‧‧平坦層 PL‧‧‧flat layer

SP‧‧‧間隔層 SP‧‧‧ spacer

WA‧‧‧晶圓層 WA‧‧‧ wafer layer

Claims (14)

一種影像感測器,包含:一可見光接收部,用以接收一可見光,其中該可見光接收部包含:一紅外光截止濾色層;複數個主彩色濾色器;以及複數個次彩色濾色器,其中該些主彩色濾色器與該些次彩色濾色器設置於該紅外光截止濾色層上;以及一紅外光接收部,用以接收一紅外光,其中該紅外光接收部包含:複數個第一紅外光穿透濾色器;以及複數個第二紅外光穿透濾色器,該些第二紅外光穿透濾色器設置於該些第一紅外光穿透濾色器上;其中該些主彩色濾色器的每一者佔據一第一面積,該些次彩色濾色器與該些第二紅外光穿透濾色器佔據一第二面積,該第一面積實質上相等於該第二面積。 An image sensor includes: a visible light receiving portion for receiving a visible light, wherein the visible light receiving portion comprises: an infrared light cut filter layer; a plurality of main color filters; and a plurality of sub color filters The primary color filter and the secondary color filters are disposed on the infrared light-cutting color filter layer; and an infrared light receiving portion is configured to receive an infrared light, wherein the infrared light receiving portion comprises: a plurality of first infrared light penetrating color filters; and a plurality of second infrared light penetrating color filters, wherein the second infrared light penetrating color filters are disposed on the first infrared light penetrating color filters Each of the main color filters occupies a first area, and the second color filter and the second infrared light penetrating color filter occupy a second area, the first area is substantially The phase is equal to the second area. 如申請專利範圍第1項所述之影像感測器,其中該可見光接收部更包含一可見光光二極體,該紅外光截止濾色層設置於該可見光光二極體上,其中該可見光穿過該些主彩色濾色器、該些次彩色濾色器以及該紅外光截止濾色層而被該可見光光二極體所接收。 The image sensor of claim 1, wherein the visible light receiving portion further comprises a visible light diode, wherein the infrared light blocking color filter layer is disposed on the visible light diode, wherein the visible light passes through the visible light photodiode The main color filters, the sub-color filters, and the infrared light-cutting filter layer are received by the visible light diode. 如申請專利範圍第2項所述之影像感測 器,其中該紅外光接收部更包含一紅外光光二極體,該些第一紅外光穿透濾色器設置於該可見光光二極體上,其中該紅外光穿過該些第二紅外光穿透濾色器以及該些第一紅外光穿透濾色器而被該紅外光光二極體所接收。 Image sensing as described in claim 2 The infrared light receiving portion further includes an infrared light emitting diode, wherein the first infrared light penetrating color filter is disposed on the visible light diode, wherein the infrared light passes through the second infrared light The color filter and the first infrared light pass through the color filter and are received by the infrared light diode. 如申請專利範圍第3項所述之影像感測器,更包含一晶圓層,位於該紅外光光二極體與該可見光光二極體上,其中該晶圓層的一第一部份位於該可見光接收部內,且該晶圓層的一第二部份位於該紅外光接收部內。 The image sensor of claim 3, further comprising a wafer layer disposed on the infrared light diode and the visible light diode, wherein a first portion of the wafer layer is located The visible light receiving portion has a second portion of the wafer layer located in the infrared light receiving portion. 如申請專利範圍第4項所述之影像感測器,其中該晶圓層的該第一部份位於該紅外光截止濾色層與該可見光光二極體之間,且該晶圓層的該第二部份位於該些第一紅外光穿透濾色器與該紅外光光二極體之間。 The image sensor of claim 4, wherein the first portion of the wafer layer is between the infrared light-cutting filter layer and the visible light diode, and the wafer layer The second portion is located between the first infrared light penetrating color filter and the infrared light photodiode. 如申請專利範圍第1項所述之影像感測器,其中該些主彩色濾色器包含一紅色濾色單元、一綠色濾色單元以及一藍色濾色單元。 The image sensor of claim 1, wherein the main color filters comprise a red color filter unit, a green color filter unit, and a blue color filter unit. 如申請專利範圍第1項所述之影像感測器,其中該些次彩色濾色器的每一者包含一紅色像素、一綠色像素以及一藍色像素。 The image sensor of claim 1, wherein each of the secondary color filters comprises a red pixel, a green pixel, and a blue pixel. 如申請專利範圍第1項所述之影像感測 器,更包含一平坦層,用以提供一平坦表面,其中該些主彩色濾色器、該些次彩色濾色器與該些第二紅外光穿透濾色器設置於該平坦表面上。 Image sensing as described in claim 1 The device further includes a flat layer for providing a flat surface, wherein the main color filters, the sub-color filters, and the second infrared light penetrating color filters are disposed on the flat surface. 如申請專利範圍第8項所述之影像感測器,其中該平坦層位於該可見光接收部與該紅外光接收部內。 The image sensor of claim 8, wherein the flat layer is located in the visible light receiving portion and the infrared light receiving portion. 如申請專利範圍第1項所述之影像感測器,更包含一微透鏡層,用以聚集該可見光與該紅外光。 The image sensor of claim 1, further comprising a microlens layer for collecting the visible light and the infrared light. 如申請專利範圍第10項所述之影像感測器,其中該微透鏡層位於該影像感測器的最上層。 The image sensor of claim 10, wherein the microlens layer is located at an uppermost layer of the image sensor. 如申請專利範圍第10項所述之影像感測器,其中該微透鏡層位於該可見光接收部與該紅外光接收部內。 The image sensor of claim 10, wherein the microlens layer is located in the visible light receiving portion and the infrared light receiving portion. 如申請專利範圍第10項所述之影像感測器,更包含一間隔層,用以提供一平坦表面,其中該微透鏡層設置於該平坦表面上。 The image sensor of claim 10, further comprising a spacer layer for providing a flat surface, wherein the microlens layer is disposed on the flat surface. 如申請專利範圍第13項所述之影像感測器,其中該間隔層位於該可見光接收部與該紅外光接收部 內。 The image sensor of claim 13, wherein the spacer layer is located at the visible light receiving portion and the infrared light receiving portion Inside.
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645237B2 (en) * 1975-07-12 1981-10-24
WO2010084640A1 (en) * 2009-01-20 2010-07-29 シャープ株式会社 Area sensor and liquid crystal display device with area sensor
US20110085063A1 (en) * 2009-10-14 2011-04-14 Dong Ki Min Color filter array, image sensor having the same, and signal interpolating method
JP5645237B2 (en) 2007-11-26 2014-12-24 パナソニックIpマネジメント株式会社 Infrared detector
TW201523860A (en) * 2013-12-05 2015-06-16 Omnivision Tech Inc Image sensors for capturing both visible light images and infrared light images, and associated systems and methods
CN104735427A (en) * 2013-12-24 2015-06-24 浙江大华技术股份有限公司 Image sensor
US20150311239A1 (en) * 2012-12-04 2015-10-29 Siliconfile Technologies Inc. Cmos image sensor including infrared pixels having improved spectral properties, and method of manufacturing same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645237B2 (en) * 1975-07-12 1981-10-24
JP5645237B2 (en) 2007-11-26 2014-12-24 パナソニックIpマネジメント株式会社 Infrared detector
WO2010084640A1 (en) * 2009-01-20 2010-07-29 シャープ株式会社 Area sensor and liquid crystal display device with area sensor
US20110085063A1 (en) * 2009-10-14 2011-04-14 Dong Ki Min Color filter array, image sensor having the same, and signal interpolating method
US20150311239A1 (en) * 2012-12-04 2015-10-29 Siliconfile Technologies Inc. Cmos image sensor including infrared pixels having improved spectral properties, and method of manufacturing same
TW201523860A (en) * 2013-12-05 2015-06-16 Omnivision Tech Inc Image sensors for capturing both visible light images and infrared light images, and associated systems and methods
CN104735427A (en) * 2013-12-24 2015-06-24 浙江大华技术股份有限公司 Image sensor

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