TWI612162B - Coating Equipment - Google Patents

Coating Equipment Download PDF

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TWI612162B
TWI612162B TW106129073A TW106129073A TWI612162B TW I612162 B TWI612162 B TW I612162B TW 106129073 A TW106129073 A TW 106129073A TW 106129073 A TW106129073 A TW 106129073A TW I612162 B TWI612162 B TW I612162B
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magnetic
magnetoresistive
coating
region
mask
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TW106129073A
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TW201912823A (en
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林意惠
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友達光電股份有限公司
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Priority to CN201710911925.5A priority patent/CN107641787B/en
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Publication of TW201912823A publication Critical patent/TW201912823A/en

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Abstract

一種鍍膜設備包含磁性裝置以及磁阻裝置。磁性裝置包含複數磁力元件。此些磁力元件形成至少一第一磁力區與至少一第二磁力區,且第一磁力區的磁力小於第二磁力區的磁力。磁阻裝置位於磁性裝置與待鍍物之間。磁阻裝置包含至少一第一磁阻部與至少一第二磁阻部。第一磁阻部對應於第一磁力區,且第二磁阻部對應於第二磁力區。第一磁組部的磁阻能力小於第二磁阻部的磁阻能力。A coating apparatus includes a magnetic device and a magnetoresistive device. The magnetic device includes a plurality of magnetic elements. The magnetic elements form at least a first magnetic region and at least a second magnetic region, and the magnetic force of the first magnetic region is smaller than the magnetic force of the second magnetic region. The magnetoresistive device is located between the magnetic device and the object to be plated. The magnetoresistive device includes at least one first magnetoresistive portion and at least one second magnetoresistive portion. The first magnetoresistive portion corresponds to the first magnetic region, and the second magnetoresistive portion corresponds to the second magnetic region. The magnetoresistance capability of the first magnetic group portion is smaller than the magnetoresistance capability of the second magnetoresistive portion.

Description

鍍膜設備Coating equipment

本發明是關於鍍膜技術,特別是一種鍍膜設備。This invention relates to coating techniques, and more particularly to a coating apparatus.

隨著多媒體技術與資訊的蓬勃發展,可用以顯示資訊並作為人機溝通界面的顯示器之發展便顯得格外重要。近年來,環保意識逐漸抬頭。在諸多顯示器中,尤以有機發光二極體(OLED)顯示器因其自發光特性而無須設置額外背光源之特性而備受重視。此外,有機發光二極體顯示器更具有廣視角、高對比、製程簡單、低操作電壓、高反應速率以及全彩化等優點,而賦有廣闊的應用前景。因此,有機發光二極體顯示器有望可成為顯示器的主流。With the rapid development of multimedia technology and information, the development of displays that can be used to display information and serve as a human-machine interface is particularly important. In recent years, environmental awareness has gradually risen. Among many displays, organic light-emitting diode (OLED) displays have received much attention due to their self-luminous characteristics without the need to provide additional backlight characteristics. In addition, the organic light-emitting diode display has the advantages of wide viewing angle, high contrast, simple process, low operating voltage, high reaction rate and full color, and has broad application prospects. Therefore, the organic light emitting diode display is expected to become the mainstream of the display.

一般而言,有機發光二極體顯示器的發光結構是藉由在陽極與陰極的一對電極之間夾設多層有機材料層所組成。有機發光二極體顯示器的發光機制是利用施加電壓於電極時,電洞與電子會分別從陽極與陰極流出並注入到有機材料層中,並透過電洞與電子之再結合的能量來激發有機材料的分子放出光子而發光。In general, the light-emitting structure of an organic light-emitting diode display is composed of a plurality of organic material layers interposed between a pair of electrodes of an anode and a cathode. The illuminating mechanism of the organic light-emitting diode display is that when a voltage is applied to the electrode, the hole and the electron are respectively flowed out from the anode and the cathode and injected into the organic material layer, and the energy recombined by the hole and the electron is used to excite the organic light. The molecules of the material emit photons and emit light.

習知有機發光二極體顯示器可採用蒸鍍方式將有機材料鍍於基板上以形成所需的層膜,且有機發光二極體顯示器中各像素是藉由所使用的掩膜板之開口來定義。因此,掩膜板與基板貼合的緊密程度會影響到各像素位置精確度,甚至會造成後續成品之後的亮度不均或混色等問題。為了使掩膜板可緊密貼合於基板,在傳統作法上會在基板上方設置磁力裝置,以透過磁力裝置之磁力,來吸引位於基板下方的掩膜板,而使得掩膜板可貼附於基板。Conventional organic light-emitting diode displays may use an evaporation method to plate an organic material on a substrate to form a desired layer film, and each pixel in the organic light-emitting diode display is opened by an opening of the mask used. definition. Therefore, the closeness of the mask to the substrate affects the accuracy of each pixel position, and may even cause uneven brightness or color mixing after the subsequent products. In order to make the mask plate fit tightly to the substrate, in the conventional method, a magnetic device is disposed above the substrate to penetrate the magnetic force of the magnetic device to attract the mask plate under the substrate, so that the mask can be attached to the mask. Substrate.

在傳統的鍍膜設備中,磁力裝置之磁力元件的配置佈局已為固定而不能隨意改變。然而,此些磁力元件所生成的磁場並非是一個均勻的磁場。即便想變動磁力裝置對掩膜板之吸附強度時,亦僅能藉由調整磁力裝置於垂直方向與掩膜板之間的相對距離,來變動磁力裝置對掩膜板的吸附強度。此外,發明人於鍍膜過程中更發現,即便肉眼可見磁力裝置已將掩膜板緊密吸附於基板下方,但由於基板本身受到重力作用所產生之彎曲,使得掩膜板並非是完全緊密貼合於基板,並且掩膜板在某些部分與基板之間實際上是存有間隙(Gap),進而使得後續鍍於基板上之某些膜塊的寬度及/或長度會因所受到之磁力並不均勻而偏離期望值。In conventional coating equipment, the configuration of the magnetic components of the magnetic device has been fixed and cannot be changed at will. However, the magnetic field generated by such magnetic elements is not a uniform magnetic field. Even if it is desired to change the adsorption strength of the magnetic device to the mask, the adsorption strength of the magnetic device to the mask can only be changed by adjusting the relative distance between the magnetic device and the mask in the vertical direction. In addition, the inventor found in the coating process that even if the magnetic device is visible to the naked eye, the mask is tightly adsorbed under the substrate, but the mask itself is not completely completely adhered to due to the bending caused by the gravity of the substrate itself. The substrate, and the mask actually has a gap between some parts and the substrate, so that the width and/or length of some of the film blocks subsequently plated on the substrate may not be due to the magnetic force received. Uniform and deviate from the expected value.

有鑑於此,本發明之一實施例提出一種鍍膜設備。在一實施例中,一種鍍膜設備包含磁性裝置與磁阻裝置。磁性裝置包含複數磁力元件。此些磁力元件形成至少一第一磁力區與至少一第二磁力區,且第一磁力區的磁力小於第二磁力區的磁力。磁阻裝置包含至少一第一磁阻部與至少一第二磁阻部。第一磁阻部對應於第一磁力區,且第二磁阻部對應於第二磁力區。第一磁阻部的磁阻能力小於第二磁阻部的磁阻能力。In view of this, an embodiment of the present invention provides a coating apparatus. In an embodiment, a coating apparatus includes a magnetic device and a magnetoresistive device. The magnetic device includes a plurality of magnetic elements. The magnetic elements form at least a first magnetic region and at least a second magnetic region, and the magnetic force of the first magnetic region is smaller than the magnetic force of the second magnetic region. The magnetoresistive device includes at least one first magnetoresistive portion and at least one second magnetoresistive portion. The first magnetoresistive portion corresponds to the first magnetic region, and the second magnetoresistive portion corresponds to the second magnetic region. The magnetoresistance capability of the first magnetoresistive portion is smaller than the magnetoresistive capability of the second magnetoresistive portion.

綜上所述,本發明之一實施例之鍍膜設備,其透過具有不同磁阻能力的磁阻部來均勻化磁性裝置對於掩膜板的磁力分佈,使得掩膜板可更貼合於待鍍物,進而改善鍍膜品質。In summary, the coating apparatus according to an embodiment of the present invention passes the magnetic resistance portions having different magnetoresistance capabilities to homogenize the magnetic distribution of the magnetic device to the mask, so that the mask can be more conformed to be plated. And improve the quality of the coating.

以下在實施方式中詳細敘述本發明之詳細特徵及優點,其內容足以使任何熟習相關技藝者瞭解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技藝者可輕易地理解本發明相關之目的及優點。The detailed features and advantages of the present invention are described in detail in the embodiments of the present invention. The objects and advantages associated with the present invention can be readily understood by those skilled in the art.

圖1為鍍膜設備之一實施例的概要示意圖。請參閱圖1,鍍膜設備100用以對待鍍物200進行鍍膜處理。鍍膜設備100包含磁性裝置110與磁阻裝置120。磁阻裝置120相對於磁性裝置110設置且位於磁性裝置110之下方。當待鍍物200進入至鍍膜設備100中時,待鍍物200可被送至磁阻裝置120的下方,換言之,此時磁阻裝置120是位於磁性裝置110與待鍍物200之間。此外,鍍膜設備100更包含掩膜板130以及鍍膜材料源140。掩膜板130對應於磁性裝置110設置並且位於磁阻裝置120的下方。鍍膜材料源140對應於磁性裝置110設置並且位於掩膜板130的下方。當待鍍物200傳入至鍍膜設備100中時,掩膜板130會位於待鍍物200與鍍膜材料源140之間。1 is a schematic diagram of an embodiment of a coating apparatus. Referring to FIG. 1 , the coating apparatus 100 is used for coating a plating object 200 . The coating apparatus 100 includes a magnetic device 110 and a magnetoresistive device 120. The magnetoresistive device 120 is disposed relative to the magnetic device 110 and below the magnetic device 110. When the object to be plated 200 enters the coating apparatus 100, the object to be plated 200 can be sent to the lower side of the magnetoresistive device 120, in other words, the magnetoresistive device 120 is located between the magnetic device 110 and the object to be plated 200. In addition, the coating apparatus 100 further includes a mask 130 and a coating material source 140. The mask 130 is disposed corresponding to the magnetic device 110 and is located below the magnetoresistive device 120. The coating material source 140 is disposed corresponding to the magnetic device 110 and is located below the mask plate 130. When the object to be plated 200 is introduced into the coating apparatus 100, the mask 130 may be located between the object to be plated 200 and the source of the coating material 140.

圖2為圖1中磁性裝置之第一實施例的概要示意圖,圖3為圖1中磁性裝置之第二實施例的概要示意圖,且圖4為圖2中磁性裝置的局部透視圖。請參閱圖1至圖4,磁性裝置110可用以吸引掩膜板130,以使得掩膜板130可因受到磁性裝置110之磁吸力而貼附於位於其上方的待鍍物200。2 is a schematic diagram of a first embodiment of the magnetic device of FIG. 1, FIG. 3 is a schematic diagram of a second embodiment of the magnetic device of FIG. 1, and FIG. 4 is a partial perspective view of the magnetic device of FIG. Referring to FIGS. 1 through 4, the magnetic device 110 can be used to attract the mask 130 such that the mask 130 can be attached to the object to be plated 200 located above it by the magnetic attraction of the magnetic device 110.

磁性裝置110包含複數磁力元件111。此些磁力元件111可依據預設的配置佈局進行配置,並且形成至少一第一磁力區與至少一第二磁力區。於此,第一磁力區的磁力強度小於第二磁力區的磁力強度。Magnetic device 110 includes a plurality of magnetic elements 111. The magnetic elements 111 can be configured according to a preset configuration layout and form at least a first magnetic region and at least a second magnetic region. Here, the magnetic strength of the first magnetic region is smaller than the magnetic strength of the second magnetic region.

在一實施例中,所述的第一磁力區與第二磁力區可為此些磁力元件111因配置佈局所產生之不同磁力大小的區域。但本發明並非僅限於此,在另一實施例中,所述的第一磁力區與第二磁力區更可為此些磁力元件111與待鍍物200及/或掩膜板130所共同形成之不同磁力大小的區域。In an embodiment, the first magnetic region and the second magnetic region may be regions of different magnetic force generated by the magnetic component 111 due to the configuration layout. However, the present invention is not limited thereto. In another embodiment, the first magnetic region and the second magnetic region may be formed by the magnetic component 111 and the object to be plated 200 and/or the mask 130. Different magnetic size areas.

在一實施例中,磁性裝置110可為呈平板狀之磁板。因此,在一些實施例中,磁性裝置110更包含板體112,且此些磁力元件111可嵌入於板體112之中。In an embodiment, the magnetic device 110 can be a magnetic plate in the form of a flat plate. Therefore, in some embodiments, the magnetic device 110 further includes a plate body 112, and the magnetic elements 111 can be embedded in the plate body 112.

各磁力元件111可為矩形磁塊,並具有二相對的第一邊111a與二相對的第二邊111b。在一些實施例中,各磁力元件111的第一邊111a之長度和其第二邊111b之長度不同,例如磁力元件111可為條狀磁塊。但本發明並非僅限於此,在另一些實施例中,各磁力元件111的第一邊111a之長度亦可和其第二邊111b之長度相同,例如磁力元件111可為方形磁塊。Each of the magnetic elements 111 may be a rectangular magnetic block and has two opposite first sides 111a and two opposite second sides 111b. In some embodiments, the length of the first side 111a of each of the magnetic elements 111 is different from the length of the second side 111b thereof. For example, the magnetic element 111 may be a strip-shaped magnetic block. However, the present invention is not limited thereto. In other embodiments, the length of the first side 111a of each magnetic element 111 may be the same as the length of the second side 111b thereof. For example, the magnetic element 111 may be a square magnetic block.

以下,以呈條狀之磁力元件111為例,並以磁力元件111中較長的一邊為第一邊111a,且以較短的一邊為第二邊111b來進行說明,但本發明並非以此為限,在另一實施例中,亦可以磁力元件111中較短的一邊為第一邊111a,且以較長的一邊為第二邊111b。Hereinafter, the strip-shaped magnetic element 111 is taken as an example, and the longer side of the magnetic element 111 is the first side 111a, and the shorter side is the second side 111b. However, the present invention does not To be limited, in another embodiment, the shorter side of the magnetic element 111 may be the first side 111a and the longer side being the second side 111b.

在一實施例中,此些磁力元件111可以陣列形式排列,並且形成複數個第一交界處與複數個第二交界處。於此,第一交界處的延伸方向是不同於第二交界處的延伸方向。舉例而言,如圖2所示,各第一交界處可沿第一方向D1延伸,且各第二交界處沿第二方向D2延伸,第二方向D2正交於第一方向D1。又或者,如圖3所示,各第一交界處亦可沿第二方向D2延伸,且各第二交界處沿第一方向D1延伸。In an embodiment, the magnetic elements 111 may be arranged in an array and form a plurality of first junctions and a plurality of second junctions. Here, the extending direction of the first boundary is different from the extending direction of the second boundary. For example, as shown in FIG. 2, each of the first junctions may extend along the first direction D1, and each of the second junctions extends along the second direction D2, and the second direction D2 is orthogonal to the first direction D1. Alternatively, as shown in FIG. 3, each of the first junctions may also extend along the second direction D2, and each of the second junctions extends along the first direction D1.

在一實施例中,各磁力元件111之第一邊111a是平行於相鄰之磁力元件111的第一邊111a,且各磁力元件111的第二邊111b是平行於相鄰之磁力元件111的第二邊111b。換言之,此些磁力元件111之設置配向可彼此相同。In one embodiment, the first side 111a of each magnetic element 111 is parallel to the first side 111a of the adjacent magnetic element 111, and the second side 111b of each magnetic element 111 is parallel to the adjacent magnetic element 111. The second side 111b. In other words, the arrangement alignment of the magnetic elements 111 can be identical to each other.

在一實施例中,此些磁力元件111所形成的各第一交界處之長度可大於各第二交界處之長度。換言之,此時各第一交界處是位於任二相鄰之磁力元件111的第一邊111a,且各第二交界處是位於任二相鄰之磁力元件111的第二邊111b。In an embodiment, the length of each of the first junctions formed by the magnetic elements 111 may be greater than the length of each of the second junctions. In other words, at this time, each first boundary is located at the first side 111a of any two adjacent magnetic elements 111, and each second boundary is located at the second side 111b of any two adjacent magnetic elements 111.

在一實施例中,此些磁力元件111彼此緊靠排列。此時各第一交界處可由任二相鄰之磁力元件111的第一邊111a所形成,且各第二交界處由任二相鄰之磁力元件111的第二邊111b所形成。In an embodiment, the magnetic elements 111 are arranged in close proximity to one another. At this time, each of the first junctions may be formed by the first side 111a of any two adjacent magnetic elements 111, and each of the second interfaces is formed by the second side 111b of any two adjacent magnetic elements 111.

在一實施例中,板體112呈矩形,並具有二相對的第一側邊112a與二相對的第二側邊112b。在一些實施例中,如圖2所示,各磁力元件111可以其第一邊111a平行於板體112之第一側邊112a,並且以其第二邊111b平行於板體112之第二側邊112b的配向方式配置於板體112,第一側邊112a小於第二側邊112b。在另一些實施例中,如圖3所示,各磁力元件111亦可以其第一邊111a平行於板體112之第二側邊112b,並且以其第二邊111b平行於板體112之第一側邊112a的配向方式配置於板體112,第一側邊112a大於第二側邊112b。In one embodiment, the plate body 112 is rectangular in shape and has two opposing first side edges 112a and two opposite second side edges 112b. In some embodiments, as shown in FIG. 2, each of the magnetic elements 111 may have its first side 111a parallel to the first side 112a of the plate body 112 and its second side 111b parallel to the second side of the plate body 112. The alignment of the side 112b is disposed on the plate body 112, and the first side 112a is smaller than the second side 112b. In other embodiments, as shown in FIG. 3, each of the magnetic elements 111 may have its first side 111a parallel to the second side 112b of the board 112, and its second side 111b parallel to the board 112. The alignment of one side 112a is disposed on the plate body 112, and the first side 112a is larger than the second side 112b.

各磁力元件111具有磁性不同的第一磁極N與第二磁極S。在一實施例中,各磁性元件111之第一磁極N與第二磁極S是沿垂直於第一方向D1與第二方向D2之第三方向D3上相對配置,如圖4所示。Each of the magnetic elements 111 has a first magnetic pole N and a second magnetic pole S that are different in magnetic properties. In one embodiment, the first magnetic pole N and the second magnetic pole S of each magnetic element 111 are disposed opposite each other in a third direction D3 perpendicular to the first direction D1 and the second direction D2, as shown in FIG.

在一實施例中,各磁力元件111是以其第一磁極N和相鄰之磁力元件111的第二磁極S相靠,且各磁力元件111是以其第二磁極S和相鄰之磁力元件111的第一磁極N相靠。換言之,各磁力元件111之第一磁極N可被相鄰之磁力元件111以其第二磁極S包圍,且各磁力元件111之第二磁極S可被相鄰之磁力元件111以其第一磁極N包圍,如圖2至圖4所示,但本發明並非以此為限。In one embodiment, each of the magnetic elements 111 is with its first magnetic pole N and the second magnetic pole S of the adjacent magnetic element 111, and each magnetic element 111 is its second magnetic pole S and an adjacent magnetic element. The first magnetic poles N of 111 are opposed to each other. In other words, the first magnetic pole N of each magnetic element 111 can be surrounded by the adjacent magnetic element 111 with its second magnetic pole S, and the second magnetic pole S of each magnetic element 111 can be adjacent to the magnetic element 111 by its first magnetic pole N enveloping, as shown in Figures 2 to 4, but the invention is not limited thereto.

圖5為圖1中磁阻裝置之第一實施例的概要示意圖,圖6為圖1中磁阻裝置之第二實施例的概要示意圖,圖7為圖1中磁阻裝置之第三實施例的概要示意圖,圖8為圖1中磁阻裝置之第四實施例的概要示意圖,圖9為圖1中磁阻裝置之第五實施例的概要示意圖,圖10為圖1中磁阻裝置之第六實施例的概要示意圖。請參閱圖1至圖10,磁阻裝置120包含對應於至少一第一磁力區(未標示)的至少一第一磁阻部121以及對應於至少一第二磁力區(未標示)的第二磁阻部122。於此,第一磁阻部121的磁阻能力(即削減磁力的能力)小於第二磁阻部122的磁阻能力。5 is a schematic diagram of a first embodiment of the magnetoresistive device of FIG. 1, FIG. 6 is a schematic diagram of a second embodiment of the magnetoresistive device of FIG. 1, and FIG. 7 is a third embodiment of the magnetoresistive device of FIG. FIG. 8 is a schematic diagram of a fourth embodiment of the magnetoresistive device of FIG. 1, FIG. 9 is a schematic diagram of a fifth embodiment of the magnetoresistive device of FIG. 1, and FIG. 10 is a schematic diagram of the magnetoresistive device of FIG. A schematic diagram of a sixth embodiment. Referring to FIG. 1 to FIG. 10, the magnetoresistive device 120 includes at least one first magnetoresistive portion 121 corresponding to at least one first magnetic region (not labeled) and a second portion corresponding to at least one second magnetic region (not labeled). Magnetoresistive portion 122. Here, the magnetoresistance capability of the first magnetoresistive portion 121 (that is, the ability to reduce the magnetic force) is smaller than the magnetoresistive capability of the second magnetoresistive portion 122.

在一實施例中,第一磁阻部121之數量可為一或多個,且第二磁阻部122之數量亦可為一或多個。In one embodiment, the number of the first magnetoresistive portions 121 may be one or more, and the number of the second magnetoresistive portions 122 may also be one or more.

在一實施例中,第一磁阻部121與第二磁阻部122可因對應於第一磁力區與第二磁力區之分佈而形成交錯排列的配置。舉例而言,如圖4與圖5所示,第一磁阻部121可為沿第一方向D1延展並在第二方向D2上依序間隔排列的區塊,並且任二相鄰之第一磁阻部121之間夾有至少一個第二磁阻部122。或者,如圖7所示,第一磁阻部121可為沿第二方向D2延展並在第一方向D1上依序間隔排列的區塊,並且任二相鄰之第一磁阻部121之間夾有至少一個第二磁阻部122。又或者,如圖8所示,此些第一磁阻部121更可為散佈的小區塊,且此些第一磁阻部121之間藉由至少一第二磁阻部122彼此相隔。In an embodiment, the first magnetoresistive portion 121 and the second magnetoresistive portion 122 may be arranged in a staggered arrangement due to a distribution corresponding to the first magnetic region and the second magnetic region. For example, as shown in FIG. 4 and FIG. 5, the first magnetoresistive portion 121 may be a block that extends in the first direction D1 and is sequentially arranged in the second direction D2, and is first adjacent to each other. At least one second magnetic resistance portion 122 is interposed between the magnetic resistance portions 121. Alternatively, as shown in FIG. 7, the first magnetoresistive portion 121 may be a block extending in the second direction D2 and sequentially arranged in the first direction D1, and any two adjacent first magnetoresistive portions 121 At least one second magnetic resistance portion 122 is sandwiched therebetween. Alternatively, as shown in FIG. 8 , the first magnetoresistive portions 121 may be interspersed cells, and the first magnetoresistive portions 121 are separated from each other by at least one second magnetoresistive portion 122 .

在一實施例中,如圖9與圖10所示,第一磁阻部121與第二磁阻部122可因對應於第一磁力區與第二磁力區之分佈而形成第一磁阻部121位於第二磁阻部122之外圍的配置。但本發明並非僅限於此,在另一實施例中,第一磁阻部121與第二磁阻部122亦可因對應於第一磁力區與第二磁力區之分佈而形成第二磁阻部122位於第一磁阻部121之外圍的配置。In an embodiment, as shown in FIG. 9 and FIG. 10, the first magnetoresistive portion 121 and the second magnetoresistive portion 122 may form a first magnetoresistive portion due to a distribution corresponding to the first magnetic region and the second magnetic region. 121 is disposed at a periphery of the second magnetoresistive portion 122. However, the present invention is not limited thereto. In another embodiment, the first magnetoresistive portion 121 and the second magnetoresistive portion 122 may also form a second magnetoresistance due to a distribution corresponding to the first magnetic region and the second magnetic region. The portion 122 is located at the periphery of the first magnetoresistive portion 121.

在一實施例中,當磁性裝置110之第一磁力區是位於磁力元件111所形成之第一交界處時,磁阻裝置120之各第一磁阻部121可分別對應於第一交界處而相互平行設置。In an embodiment, when the first magnetic region of the magnetic device 110 is located at the first boundary formed by the magnetic component 111, each of the first magnetoresistive portions 121 of the magnetoresistive device 120 may respectively correspond to the first interface. Set parallel to each other.

磁阻裝置120更包含本體123,且第一磁阻部121與第二磁阻部122為本體123的部分區塊及/或設置於本體123上之部件。在一些實施例中,本體123可呈平板狀。The magnetoresistive device 120 further includes a body 123, and the first magnetoresistive portion 121 and the second magnetoresistive portion 122 are a partial block of the body 123 and/or a component disposed on the body 123. In some embodiments, the body 123 can be in the form of a flat plate.

圖11為圖5中沿AA’剖線之一實施例的剖視示意圖,圖12為圖5中沿AA’剖線之另一實施例的剖視示意圖,圖13為圖9中沿BB’剖線之一實施例的剖視示意圖,且圖14為圖9中沿BB’剖線之另一實施例的剖視示意圖。請參閱圖1至圖14,在一實施例中,第一磁阻部121可具有至少一通孔121H,且第二磁阻部122並不具有任何通孔121H。換言之,在本體123上開設有通孔121H之部分可為所述的第一磁阻部121,並且本體123之其餘部分可為所述的第二磁阻部122。Figure 11 is a cross-sectional view of the embodiment taken along line AA' of Figure 5, Figure 12 is a cross-sectional view of another embodiment taken along line AA' of Figure 5, and Figure 13 is taken along line BB' of Figure 9. A cross-sectional view of one embodiment of a section line, and FIG. 14 is a cross-sectional view of another embodiment of the section taken along line BB' of FIG. Referring to FIG. 1 to FIG. 14 , in an embodiment, the first magnetoresistive portion 121 may have at least one through hole 121H, and the second magnetoresistive portion 122 does not have any through holes 121H. In other words, a portion of the body 123 having the through hole 121H may be the first magnetoresistive portion 121, and the remaining portion of the body 123 may be the second magnetoresistive portion 122.

在一實施例中,當磁性裝置110之第一磁力區是位於磁力元件111所形成之第一交界處時,各通孔121H可分別對應於第一交界處而相互平行設置,如圖5、圖7與圖8所示。而在另一實施例中,當磁性裝置110之第一磁力區是位磁性裝置110之外圍,如位在此些磁性元件111所構成之陣列的最外圈部分或者板體112之外圈部分時,各通孔121H可對應地設置於本體123之外圈部分,如圖9所示。In an embodiment, when the first magnetic region of the magnetic device 110 is located at the first boundary formed by the magnetic element 111, each of the through holes 121H may be disposed parallel to each other corresponding to the first boundary, as shown in FIG. Figure 7 and Figure 8. In another embodiment, when the first magnetic region of the magnetic device 110 is at the periphery of the magnetic device 110, such as the outermost ring portion of the array formed by the magnetic elements 111 or the outer portion of the plate 112 When the through holes 121H are correspondingly disposed on the outer ring portion of the body 123, as shown in FIG.

在一些實施例中,磁力元件111所形成之各第一交界處在第一磁阻部121之正投影大致上可位於對應之通孔121H的中央。舉例而言,當各第一交界處由任二相鄰之磁力元件111的第一邊111a形成時,各磁力元件111之第一邊111a在第一磁阻部121之正投影大致上位於對應之通孔121H的中央。In some embodiments, the orthographic projection of each of the first junctions formed by the magnetic elements 111 at the first magnetoresistive portion 121 may be substantially at the center of the corresponding through hole 121H. For example, when each first boundary is formed by the first side 111a of any two adjacent magnetic elements 111, the first side 111a of each magnetic element 111 is substantially corresponding to the orthographic projection of the first magnetoresistive portion 121. The center of the through hole 121H.

在一些實施例中,如圖11與圖13所示,通孔121H是貫穿於本體123之相對二面,以使得第一磁力區的磁力在通過第一磁阻部121時可直經通過通孔121H而不受到衰減,但本發明並非以此為限,在另一些實施例中,如圖12與圖14所示,通孔121H亦可僅為設於本體123的凹洞而並未貫穿本體123,以使得第一磁力區發出的磁力在通過第一磁阻部121時僅受到些許的衰減。In some embodiments, as shown in FIG. 11 and FIG. 13 , the through holes 121H are penetrating through opposite sides of the body 123 such that the magnetic force of the first magnetic region passes through the first magnetoresistive portion 121. The hole 121H is not subjected to attenuation, but the present invention is not limited thereto. In other embodiments, as shown in FIG. 12 and FIG. 14, the through hole 121H may be only a recess provided in the body 123 and not penetrated. The body 123 is such that the magnetic force emitted by the first magnetic region is only slightly attenuated as it passes through the first magnetoresistive portion 121.

在一些實施例中,通孔121H的開口圖案可為矩形,但本發明並非僅限於此。在另一些實施例中,通孔121H的開口圖案亦可為圓形、橢圓形、六邊形等圖案。此外,通孔121H的開口大小可視各第一磁阻部121所需之磁阻能力進行調整。In some embodiments, the opening pattern of the through hole 121H may be a rectangle, but the invention is not limited thereto. In other embodiments, the opening pattern of the through hole 121H may also be a circular, elliptical, hexagonal, or the like pattern. In addition, the size of the opening of the through hole 121H can be adjusted according to the reluctance capability required of each of the first magnetoresistive portions 121.

在一實施例中,通孔121H的寬度W1(若通孔121H為圓形時即指其直徑)可為磁力元件111之寬度W2(即磁力元件111的第二邊111b)的0.2倍至0.25倍之間。此外,任二相鄰之通孔121H的中心相距距離I1可大致上等同於磁力元件111之寬度W2。In an embodiment, the width W1 of the through hole 121H (or the diameter when the through hole 121H is circular) may be 0.2 times to 0.25 of the width W2 of the magnetic element 111 (ie, the second side 111b of the magnetic element 111). Between times. Further, the center distance I1 of any two adjacent through holes 121H may be substantially equal to the width W2 of the magnetic element 111.

在一實施例中,通孔121H可對應於第一交界處設置,並沿著第一交界處的延伸方向延展。在一些實施例中,通孔121H所延展出的長度L1大致上小於或等於此些磁力元件111所排列出之陣列的總長度L2。In an embodiment, the through hole 121H may be disposed corresponding to the first boundary and extend along the extending direction of the first boundary. In some embodiments, the length L1 of the through hole 121H is substantially less than or equal to the total length L2 of the array in which the magnetic elements 111 are arranged.

圖15為圖6中沿CC’剖線之一實施例的剖視示意圖,圖16為圖10中沿DD’剖線之一實施例的剖視示意圖。請參閱圖1至圖16,在一實施例中,第一磁阻部121的厚度H1小於第二磁阻部122的厚度H2,以使得磁性裝置110之第一磁力區發出的磁力在通過第一磁阻部121時所受到的衰減量較第二磁力區發出的磁力在通過第二磁阻部122時所受到的衰減量低。Figure 15 is a cross-sectional view of the embodiment taken along line CC' of Figure 6, and Figure 16 is a cross-sectional view of the embodiment of Figure 10 taken along line DD'. Referring to FIG. 1 to FIG. 16 , in an embodiment, the thickness H1 of the first magnetoresistive portion 121 is smaller than the thickness H2 of the second magnetoresistive portion 122 such that the magnetic force emitted by the first magnetic region of the magnetic device 110 passes through the first The amount of attenuation received by the magnetoresistive portion 121 is lower than the amount of attenuation that the magnetic force emitted from the second magnetic region passes when passing through the second magnetoresistive portion 122.

在一些實施例中,各第一磁阻部121之厚度H1以及各第二磁阻部122之厚度H2可視個別所需之磁阻能力進行調整。換言之,各個第一磁阻部121之厚度H1可互不相同,並且各個第二磁阻部122之厚度H2可互不相同。In some embodiments, the thickness H1 of each of the first magnetoresistive portions 121 and the thickness H2 of each of the second magnetoresistive portions 122 may be adjusted according to individual required magnetoresistance capabilities. In other words, the thickness H1 of each of the first magnetoresistive portions 121 may be different from each other, and the thickness H2 of each of the second magnetoresistive portions 122 may be different from each other.

在一些實施例中,磁阻裝置120之第一磁阻部121的厚度與第二磁阻部122之厚度介於15毫米(mm)與50毫米之間。In some embodiments, the thickness of the first magnetoresistive portion 121 of the magnetoresistive device 120 and the thickness of the second magnetoresistive portion 122 are between 15 millimeters (mm) and 50 millimeters.

在一些實施例中,磁阻裝置120之材質為可屏蔽磁力的磁導率高材質,例如,軟鐵、矽鋼、坡莫合金等。In some embodiments, the magnetic resistance device 120 is made of a material having a high magnetic permeability that can shield the magnetic force, for example, soft iron, neodymium steel, permalloy, and the like.

圖17為鍍膜方法之一實施例的流程圖。請參閱圖1至圖17,鍍膜方法包含傳送待鍍物200至磁性裝置110之下方(步驟S10)、調整掩膜板130與待鍍物200之間的對應位置(步驟S20)、調整磁阻裝置120(步驟S30),以及啟動鍍膜材料源140(步驟S40),以開始對待鍍物200進行鍍膜。Figure 17 is a flow chart of one embodiment of a coating process. Referring to FIG. 1 to FIG. 17, the coating method includes transferring the object to be plated 200 to the lower side of the magnetic device 110 (step S10), adjusting the corresponding position between the mask plate 130 and the object to be plated 200 (step S20), and adjusting the magnetic resistance. The device 120 (step S30), and the coating material source 140 is started (step S40) to start coating the object to be plated 200.

在一實施例中,鍍膜設備100更可包含待鍍物承載器150。待鍍物承載器150用以承載待鍍物200,並且可帶動待鍍物200進行移動。因此,在步驟S10中,鍍膜設備100可藉由控制待鍍物承載器150之移動將待鍍物200傳送至磁性裝置110之下方。In an embodiment, the coating apparatus 100 further includes a substrate carrier 150 to be plated. The object to be plated 150 is used to carry the object to be plated 200 and can drive the object to be plated 200 to move. Therefore, in step S10, the coating apparatus 100 can transfer the object to be plated 200 below the magnetic device 110 by controlling the movement of the object to be plated carrier 150.

在一實施例中,鍍膜設備100更可包含掩膜板承載器160。掩膜板承載器160用以承載掩膜板130,並且可帶動掩膜板130進行移動。因此,在步驟S20中,鍍膜設備100可藉由掩膜板承載器16將掩膜板130傳送至待鍍物200之下方,並且調整掩膜板130與待鍍物200之對應位置以進行預對位之相關操作。In an embodiment, the coating apparatus 100 may further include a mask carrier 160. The mask carrier 160 is used to carry the mask 130 and can move the mask 130 to move. Therefore, in step S20, the coating apparatus 100 can transfer the mask 130 to the underside of the object to be plated 200 by the mask carrier 16, and adjust the corresponding position of the mask 130 to the object to be plated 200 for pre-preparation. The operation of the alignment.

在一實施例中,鍍膜設備100更可包含調控裝置170,且調控裝置170耦接於磁阻裝置120。調控裝置170用以移動及/或轉動磁阻裝置120。例如,使得磁阻裝置120可於水平面上進行位置之線性移動及/或旋轉。In an embodiment, the coating device 100 further includes a regulating device 170 , and the regulating device 170 is coupled to the magnetoresistive device 120 . The regulating device 170 is used to move and/or rotate the magnetoresistive device 120. For example, the magnetoresistive device 120 is allowed to perform linear movement and/or rotation of the position on a horizontal plane.

因此,在步驟S30之一實施例中,鍍膜設備100可藉由調控裝置170之調控將磁阻裝置120移動至磁性裝置110之下方,並且使得經調控後之磁阻裝置120的第一磁阻部121可對應於磁性裝置110之第一磁力區,且使得磁阻裝置120的第二磁阻部122可對應於磁性裝置110之第二磁力區,以均勻化磁性裝置110對於掩膜板130之磁力分佈。Therefore, in an embodiment of step S30, the coating apparatus 100 can move the magnetoresistive device 120 below the magnetic device 110 by the regulation of the regulating device 170, and cause the first magnetoresistance of the controlled magnetoresistive device 120. The portion 121 may correspond to the first magnetic region of the magnetic device 110, and the second magnetoresistive portion 122 of the magnetoresistive device 120 may correspond to the second magnetic region of the magnetic device 110 to homogenize the magnetic device 110 for the mask 130 The magnetic distribution.

在步驟S30之一實施例中,調控裝置170更可根據前次鍍膜之成果對磁阻裝置120的位置進行微調,如透過移動及/或旋轉磁阻裝置120相對於磁性裝置100之位置來使得掩膜板130所受到之磁力可更加均勻。In an embodiment of step S30, the regulating device 170 can finely adjust the position of the magnetoresistive device 120 according to the result of the previous coating, such as by moving and/or rotating the magnetoresistive device 120 relative to the position of the magnetic device 100. The magnetic force received by the mask 130 can be more uniform.

在一實施例中,鍍膜設備100更可包升降裝置180,且升降裝置180耦接於磁性裝置110。升降裝置180用以調整磁性裝置110與待鍍物200之間的相對距離。因此,在步驟S30之一實施例中,鍍膜設備100除可藉由調控裝置170對於磁阻裝置120之調整來改變掩膜板130各區塊所受到之磁力外,更可藉由升降裝置180對於磁性裝置110之升降調整來改變掩膜板130整體所受到之磁力。舉例而言,升降裝置180可藉由降低磁性裝置110之位置來提升掩膜板130所受到之磁力,之後再藉由調控裝置170對於磁阻裝置120之調整均勻化掩膜板130所受到之磁力,以使得掩膜板130可緊密貼合於待鍍物200。In an embodiment, the coating device 100 can further include the lifting device 180 , and the lifting device 180 is coupled to the magnetic device 110 . The lifting device 180 is used to adjust the relative distance between the magnetic device 110 and the object to be plated 200. Therefore, in an embodiment of the step S30, the coating device 100 can change the magnetic force received by each block of the mask plate 130 by adjusting the reluctance device 120 by the regulating device 170, and can also be used by the lifting device 180. The lifting adjustment of the magnetic device 110 is performed to change the magnetic force received by the entire mask 130. For example, the lifting device 180 can raise the magnetic force received by the mask 130 by lowering the position of the magnetic device 110, and then the mask 130 is evenly adjusted by the adjusting device 170 for the reluctance device 120. The magnetic force is such that the mask 130 can be closely attached to the object to be plated 200.

綜上所述,本發明實施例之鍍膜設備,其透過具有不同磁阻能力的磁阻部來均勻化磁性裝置對於掩膜板的磁力分佈,使得掩膜板可更貼合於待鍍物,進而改善鍍膜品質。In summary, the coating device of the embodiment of the present invention passes the magnetic resistance portion having different magnetoresistance capabilities to uniformize the magnetic force distribution of the magnetic device to the mask plate, so that the mask plate can be more closely attached to the object to be plated. Thereby improving the coating quality.

雖然本發明的技術內容已經以較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神所作些許之更動與潤飾,皆應涵蓋於本發明的範疇內,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the technical content of the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention, and any modifications and refinements made by those skilled in the art without departing from the spirit of the present invention are encompassed by the present invention. The scope of protection of the present invention is therefore defined by the scope of the appended claims.

100 ‧‧‧鍍膜設備
110‧‧‧磁性裝置
111‧‧‧磁力元件
111a‧‧‧第一邊
111b‧‧‧第二邊
112‧‧‧板體
112a‧‧‧第一側邊
112b‧‧‧第二側邊
120‧‧‧磁阻裝置
121‧‧‧第一磁阻部
121H‧‧‧通孔
122‧‧‧第二磁阻部
123‧‧‧本體
130‧‧‧掩膜板
140‧‧‧鍍膜材料源
150‧‧‧待鍍物承載器
160‧‧‧掩膜板承載器
170‧‧‧調控裝置
180‧‧‧升降裝置
200‧‧‧待鍍物
D1‧‧‧第一方向
D2‧‧‧第二方向
H1‧‧‧厚度
H2‧‧‧厚度
I1‧‧‧距離
L1‧‧‧長度
L2‧‧‧總長度
W1‧‧‧寬度
W2‧‧‧寬度
N‧‧‧第一磁極
S‧‧‧第二磁極
D3‧‧‧第三方向
S10-S40‧‧‧步驟
100 ‧‧‧ Coating equipment
110‧‧‧magnetic device
111‧‧‧ magnetic components
111a‧‧‧ first side
111b‧‧‧ second side
112‧‧‧ board
112a‧‧‧ first side
112b‧‧‧Second side
120‧‧‧Magnetoresistive device
121‧‧‧First Magnetoresistance
121H‧‧‧through hole
122‧‧‧Second magnetic reluctance
123‧‧‧Ontology
130‧‧ ‧ mask
140‧‧‧Source of coating material
150‧‧‧Board-bearing carrier
160‧‧‧mask carrier
170‧‧‧Control device
180‧‧‧ lifting device
200‧‧ ‧ to be plated
D1‧‧‧ first direction
D2‧‧‧ second direction
H1‧‧‧ thickness
H2‧‧‧ thickness
I1‧‧‧ distance
L1‧‧‧ length
L2‧‧‧ total length
W1‧‧‧Width
W2‧‧‧Width
N‧‧‧first magnetic pole
S‧‧‧second magnetic pole
D3‧‧‧ third direction
S10-S40‧‧‧Steps

圖1為鍍膜設備之一實施例的概要示意圖。 圖2為圖1中磁性裝置之第一實施例的概要示意圖。 圖3為圖1中磁性裝置之第二實施例的概要示意圖。 圖4為圖2中磁性裝置的局部透視圖。 圖5為圖1中磁阻裝置之第一實施例的概要示意圖。 圖6為圖1中磁阻裝置之第二實施例的概要示意圖。 圖7為圖1中磁阻裝置之第三實施例的概要示意圖。 圖8為圖1中磁阻裝置之第四實施例的概要示意圖。 圖9為圖1中磁阻裝置之第五實施例的概要示意圖。 圖10為圖1中磁阻裝置之第六實施例的概要示意圖。 圖11為圖5中沿AA’剖線之一實施例的剖視示意圖。 圖12為圖5中沿AA’剖線之另一實施例的剖視示意圖。 圖13為圖9中沿BB’剖線之一實施例的剖視示意圖。 圖14為圖9中沿BB’剖線之另一實施例的剖視示意圖。 圖15為圖6中沿CC’ 剖線之一實施例的剖視示意圖。 圖16為圖10中沿DD’剖線之一實施例的剖視示意圖。 圖17為鍍膜方法之一實施例的流程圖。1 is a schematic diagram of an embodiment of a coating apparatus. 2 is a schematic diagram of a first embodiment of the magnetic device of FIG. 1. 3 is a schematic diagram of a second embodiment of the magnetic device of FIG. 1. Figure 4 is a partial perspective view of the magnetic device of Figure 2. FIG. 5 is a schematic diagram of a first embodiment of the magnetoresistive device of FIG. 1. FIG. FIG. 6 is a schematic diagram of a second embodiment of the magnetoresistive device of FIG. 1. FIG. FIG. 7 is a schematic diagram of a third embodiment of the magnetoresistive device of FIG. 1. FIG. FIG. 8 is a schematic diagram of a fourth embodiment of the magnetoresistive device of FIG. 1. FIG. Figure 9 is a schematic diagram showing the fifth embodiment of the magnetoresistive device of Figure 1. Figure 10 is a schematic diagram showing the sixth embodiment of the magnetoresistive device of Figure 1. Figure 11 is a cross-sectional view of the embodiment of Figure 5 taken along line AA'. Figure 12 is a cross-sectional view showing another embodiment of the line taken along line AA' of Figure 5. Figure 13 is a cross-sectional view of the embodiment of Figure 9 taken along line BB'. Figure 14 is a cross-sectional view showing another embodiment of the line taken along line BB' in Figure 9. Figure 15 is a cross-sectional view of the embodiment of Figure 6 taken along line CC'. Figure 16 is a cross-sectional view of the embodiment of Figure 10 taken along line DD'. Figure 17 is a flow chart of one embodiment of a coating process.

100‧‧‧鍍膜設備 100‧‧‧ Coating equipment

110‧‧‧磁性裝置 110‧‧‧magnetic device

120‧‧‧磁阻裝置 120‧‧‧Magnetoresistive device

130‧‧‧掩膜板 130‧‧ ‧ mask

140‧‧‧鍍膜材料源 140‧‧‧Source of coating material

150‧‧‧待鍍物承載器 150‧‧‧Board-bearing carrier

160‧‧‧掩膜板承載器 160‧‧‧mask carrier

170‧‧‧調控裝置 170‧‧‧Control device

180‧‧‧升降裝置 180‧‧‧ lifting device

200‧‧‧待鍍物 200‧‧ ‧ to be plated

Claims (11)

一種鍍膜設備,包含: 一磁性裝置,包含複數磁力元件,該些磁力元件形成至少一第一磁力區與至少一第二磁力區,其中該第一磁力區的磁力小於該第二磁力區的磁力;以及 一磁阻裝置,位於該磁性裝置與一待鍍物之間,該磁阻裝置包含至少一第一磁阻部與至少一第二磁阻部,該至少一第一磁阻部對應於該至少一第一磁力區,且該至少一第二磁阻部對應於該至少一第二磁力區,其中該第一磁阻部的磁阻能力小於該第二磁阻部的磁阻能力。A coating device comprising: a magnetic device comprising a plurality of magnetic elements, the magnetic elements forming at least a first magnetic region and at least a second magnetic region, wherein a magnetic force of the first magnetic region is smaller than a magnetic force of the second magnetic region And a magnetoresistive device between the magnetic device and a material to be plated, the magnetoresistive device comprising at least a first magnetoresistive portion and at least one second magnetoresistive portion, wherein the at least one first magnetoresistive portion corresponds to The at least one first magnetic region corresponds to the at least one second magnetic region, wherein a magnetic resistance of the first magnetic resistance portion is smaller than a magnetic resistance of the second magnetic resistance portion. 如請求項1所述的鍍膜設備,其中該至少一第一磁阻部之數量係為複數個,各該第一磁阻部具有至少一通孔。The coating device of claim 1, wherein the number of the at least one first magnetoresistive portion is plural, and each of the first magnetoresistive portions has at least one through hole. 如請求項2所述的鍍膜設備,其中各該通孔之寬度為各該磁力元件之寬度的0.2倍至0.25倍。The coating apparatus according to claim 2, wherein each of the through holes has a width of 0.2 to 0.25 times a width of each of the magnetic elements. 如請求項2所述的鍍膜設備,其中該些磁力元件以陣列形式排列而形成複數個第一交界處以及複數個第二交界處,該些第一交界處之延伸方向不同於該些第二交界處之延伸方向,該些通孔分別對應該些第一交界處,該些通孔係彼此平行設置。The coating apparatus of claim 2, wherein the magnetic elements are arranged in an array to form a plurality of first interfaces and a plurality of second interfaces, wherein the first boundaries extend in a different direction from the second In the extending direction of the junction, the through holes respectively correspond to the first interfaces, and the through holes are arranged in parallel with each other. 如請求項4所述的鍍膜設備,其中各該第一交界處之長度大於各該第二交界處之長度。The coating apparatus of claim 4, wherein a length of each of the first junctions is greater than a length of each of the second junctions. 如請求項1所述的鍍膜設備,其中該至少一第一磁阻部之數量係為複數個,各該第一磁阻部的厚度小於該至少一第二磁阻部的厚度。The coating device of claim 1, wherein the number of the at least one first magnetoresistive portion is plural, and the thickness of each of the first magnetoresistive portions is smaller than the thickness of the at least one second magnetoresistive portion. 如請求項1所述的鍍膜設備,其中該些磁力元件以陣列形式排列而形成複數個第一交界處以及複數個第二交界處,該些第一交界處之延伸方向不同於該些第二交界處之延伸方向,該至少一第一磁阻部之數量係為複數個,且該些第一磁阻部分別對應該些第一交界處,該些第一磁阻部係彼此平行設置 。The coating apparatus of claim 1, wherein the magnetic elements are arranged in an array to form a plurality of first interfaces and a plurality of second interfaces, wherein the first boundaries extend in a different direction from the second In the extending direction of the interface, the number of the at least one first magnetoresistive portion is plural, and the first magnetoresistive portions respectively correspond to the first interfaces, and the first magnetoresistive portions are disposed in parallel with each other. 如請求項7所述的鍍膜設備,其中各該第一交界處之長度大於各該第二交界處之長度。The coating apparatus of claim 7, wherein the length of each of the first junctions is greater than the length of each of the second junctions. 如請求項1所述的鍍膜設備,其中該至少一第一磁阻部以及該至少一第二磁阻部之數量均為複數個,該些第一磁阻部以及該些第二磁阻部係為交錯排列。The coating device of claim 1, wherein the at least one first magnetoresistive portion and the at least one second magnetoresistive portion are plural, the first magnetoresistive portion and the second magnetoresistive portions. The lines are staggered. 如請求項1所述的鍍膜設備,其中該至少一第一磁阻部位在該至少一第二磁阻部的外圍。The coating apparatus of claim 1, wherein the at least one first magnetoresistive portion is on a periphery of the at least one second magnetoresistive portion. 如請求項1所述的鍍膜設備,更包含: 一鍍膜材料源,位於該磁性裝置及該磁阻裝置下方; 一掩模板,位於該鍍膜材料源以及該磁阻裝置之間;以及 一調控裝置,用以移動或/及轉動該磁阻裝置,其中該磁阻裝置之材料係選自軟鐵、矽鋼與坡莫合金。The coating device of claim 1, further comprising: a source of coating material under the magnetic device and the magnetoresistive device; a mask plate between the source of the coating material and the magnetoresistive device; and a regulating device The magnetoresistive device is moved or/and rotated, wherein the material of the magnetoresistive device is selected from the group consisting of soft iron, neodymium steel and permalloy.
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