TWI611479B - Method for forming a thin film assembly - Google Patents

Abstract

The present disclosure provides a method of fabricating a thin film assembly, comprising forming a first material layer on a wafer, the first material layer being a light transmissive film. A second material layer is formed on the first material layer. An opening is formed in the second material layer, the opening exposing a central portion of the first material layer. A trench is formed in the second material layer, the trench surrounding the opening. A protective layer is formed on the second material layer, and the protective layer fills the opening to cover the central portion of the first material layer. A laser process is performed along the trench such that the trench extends through the second material layer and the first material layer to remove the second material layer and the first material layer outside the trench. After the laser process, the protective layer and the wafer are removed to form a thin film component.

Description

Method for manufacturing film assembly

The present disclosure relates to a method of making a film assembly, and more particularly to a method of making a film assembly that can be applied to a pellicle membrane.

The semiconductor integrated circuit industry has experienced rapid growth, and advances in integrated circuit materials and design techniques have produced several generations of integrated circuits. Each generation of integrated circuits has smaller and more complex circuits than the previous generation. In the development of integrated circuits, the density of functions (ie, the number of devices connected per wafer area) typically increases, and the geometry size (ie, the smallest component or line that can be fabricated in the process) ) Zoom out. The downsizing process generally provides the advantage of increasing production efficiency and reducing costs. However, the reduction in size also increases the complexity of the integrated circuit process and manufacturing. In order to achieve these advances, similar developments in integrated circuit manufacturing and manufacturing are also required.

The integrated circuit process generally includes depositing a material layer such as a dielectric layer, a conductive layer or a semiconductor layer on the semiconductor substrate, and patterning the material layer (for example, a lithography process and/or an etching process) to form the semiconductor substrate. An integrated circuit component is formed thereon. The lithography process is a technique for transferring the pattern of the mask onto the layer of material. In general, the mask has a protective film and a frame, the protective film is usually stretched and the edge is adhered to the frame by an adhesive, and the frame is fixed to the mask. protection The membrane is used to avoid damage to the mask and/or contamination by particles.

However, the protective film is usually a light transmissive film, which may cause the protective film to become distorted, cracked or otherwise damaged according to some conventional manufacturing steps, and the protective film is susceptible to contamination during certain process steps, and It is difficult to clean the protective film, so it is impossible to produce a good quality protective film.

In view of the above, there is a need to find a method of manufacturing a thin film module that can solve the above problems.

Embodiments of the present disclosure provide a method of fabricating a thin film assembly, comprising forming a first material layer on a wafer, the first material layer being a light transmissive film. A second material layer is formed on the first material layer. An opening is formed in the second material layer, the opening exposing a central portion of the first material layer. A trench is formed in the second material layer, the trench surrounding the opening. A protective layer is formed on the second material layer, and the protective layer fills the opening to cover the central portion of the first material layer. A laser process is performed along the trench such that the trench extends through the second material layer and the first material layer to remove the second material layer and the first material layer outside the trench. After the laser process, the protective layer and the wafer are removed to form a thin film component.

The disclosed embodiments provide a method of fabricating a thin film assembly, comprising forming a first material layer on a substrate, the first material layer being a light transmissive film. A second material layer is formed on the first material layer, the second material layer having a thickness greater than a thickness of the first material layer. An opening is formed in the second material layer, the opening exposing the first material layer. A protective layer is formed on the second material layer, and the protective layer fills the opening to cover the exposed first material layer. A first trench is formed in the protective layer, the first trench exposing the second material layer and surrounding the opening. Along the first groove in the second material A second trench is formed in the layer, and the second trench surrounds the opening. Performing a laser process along the first trench and the second trench such that the second trench extends through the second material layer and the first material layer to remove the second material layer outside the second trench and the first Material layer. After the laser process, the protective layer and the substrate are removed to form a film assembly.

The disclosed embodiments provide a method of fabricating a thin film assembly, comprising forming a first material layer on a substrate, the first material layer being a light transmissive film. A second material layer is formed on the first material layer. An opening is formed in the second material layer, the opening exposing a central portion of the first material layer. A trench is formed in the second material layer, the trench surrounding the opening. A dry etching process is performed along the trench such that the trench extends through the second material layer, the first material layer and the substrate, and the second material layer, the first material layer, and the substrate outside the trench are removed. After the dry etching process, the residual substrate is removed to form a thin film component. The film assembly has a cover film and a frame formed by a central portion of the first material layer, the frame being formed by an edge portion of the first material layer and a second material layer on the edge portion. The film assembly is assembled on a mask.

100‧‧‧Base

110‧‧‧First material layer

110A‧‧‧ central part

110B‧‧‧Edge section

120‧‧‧Second material layer

130‧‧‧ openings

140‧‧‧ trench

150‧‧‧protection layer

152‧‧‧ trench

170‧‧‧Shield

180‧‧‧Frame

190‧‧‧Adhesive layer

200‧‧‧film components

300‧‧‧Base

D ₁ , D ₂ ‧‧‧ Depth

1A through 7A are cross-sectional schematic views showing a method of fabricating a thin film assembly in accordance with some embodiments.

1B through 7B are schematic plan views showing a method of fabricating a thin film assembly in accordance with some embodiments.

8 through 10 are schematic cross-sectional views showing a method of fabricating a thin film assembly in accordance with some embodiments.

The following disclosure provides many different embodiments or examples to implement various features of the present disclosure. The disclosure of the present specification is a specific example of the various components and their arrangement in order to simplify the description of the invention. Of course, these specific examples are not intended to limit the disclosure. For example, if the disclosure of the present specification describes forming a first feature on or above a second feature, that is, it includes an embodiment in which the formed first feature is in direct contact with the second feature. Also included is an embodiment in which additional features are formed between the first feature and the second feature described above, such that the first feature and the second feature may not be in direct contact. In addition, different examples in the description of the disclosure may use repeated reference symbols and/or words. These repeated symbols or words are not intended to limit the relationship between the various embodiments and/or the appearance structures for the purpose of simplicity and clarity.

Furthermore, for convenience of describing the relationship of one element or feature in the drawings to another (plural) element or (complex) feature, space-related terms such as "below", "below", "lower", "above", "upper" and similar terms. It will be understood that the spatially relative terms encompass different orientations of the device in use or operation, in addition to the orientation depicted in the drawings. The device may also be additionally positioned (eg, rotated 90 degrees or at other orientations) and the description of the spatially relevant terms used may be interpreted accordingly. It will be appreciated that additional operational steps may be provided before, during, and after the method, and in some method embodiments, some of the operational steps may be replaced or omitted.

The embodiments discussed below may discuss specific aspects, such as the fabricated thin film component that can be applied to a mask (also known as a mask) (photomask) or reticle (pellicle membrane). Those skilled in the art will readily appreciate that other applications may be considered in other embodiments. For example, the method of fabricating a film assembly can be applied to any film having a frame, and is not limited to the above-described film.

It should be noted that the embodiments discussed herein may not necessarily describe every component or feature that may be present within the structure. For example, one or more components may be omitted from the drawings, such as may be omitted from the drawings when the description of the components may be sufficient to convey various aspects of the embodiments. Furthermore, the method embodiments discussed herein may be discussed in a particular order, but in other method embodiments, the order may be performed in any reasonable order.

Before describing embodiments, certain advantageous features and aspects of the disclosed embodiments will be briefly described. In summary, the present disclosure provides a method of fabricating a thin film module that uses a dry etching process (eg, a laser process) to fabricate a frame of the thin film assembly, thereby preventing the film from being twisted, broken, or otherwise damaged, thereby enabling fabrication Good quality film components. In particular, as in the embodiments disclosed below, prior to performing the laser process described above, a trench corresponding to the frame of the thin film assembly is formed and a protective layer is formed, the trench helps to smoothly perform the laser process, and the protective layer prevents The film is contaminated or destroyed during the process (especially during the laser process), thus ensuring that the film assembly has excellent quality without defects.

Certain embodiments of the present disclosure are described below. 1A through 7A are cross-sectional schematic views showing a method of fabricating a thin film assembly in accordance with some embodiments. 1B through 7B are schematic plan views showing a method of fabricating a thin film assembly in accordance with some embodiments.

Referring to FIGS. 1A and 1B, a substrate 100 is provided. The substrate 100 serves as a temporary carrier. Substrate 100 can comprise a semiconductor material (eg, germanium or other semiconductor material), a metallic material, or other material suitable as a carrier. In some embodiments, substrate 100 is a wafer. In some embodiments, the substrate 100 has a generally circular top view profile as shown in FIG. 1B. However, embodiments of the present disclosure are not limited thereto, and the substrate 100 may also have a top view profile of a rectangular or other shape.

Referring to FIGS. 2A and 2B, in some embodiments, a first material layer 110 is deposited on the substrate 100. The first material layer 110 serves primarily as a light transmissive film in the film assembly. The first material layer 110 can be a single layer of material or a plurality of layers of material.

In some embodiments, the thickness of the first material layer 110 ranges from about 10 nm to about 1 [mu]m. In certain embodiments, the first material layer 110 comprises a germanium-containing material (eg, germanium (Si), alpha-Si, etc.), a carbonaceous material (eg, a carbon nanotube, etc.), a metallic material (eg, germanium ( Ru), molybdenum (Mo), zirconium (Zr), nickel (Ni), etc., compounds containing nitrogen, oxygen or hydrogen, other suitable materials, or combinations thereof. The material of the first material layer 110 employed in the present disclosure may include any material suitable for the film without limitation. In some embodiments, the material and thickness of the first material layer 110 are suitably selected such that the first material layer 110 acts as a light transmissive film.

In some embodiments, the chemical vapor deposition (CVD) process, the physical vapor deposition (PVD) process, the atomic layer deposition (ALD) process, and the spin coating process can be performed. The first material layer 110 is deposited by other suitable methods or combinations thereof.

Next, in some embodiments, a second material layer 120 is deposited over the first material layer 110, as shown in Figures 2A and 2B. The second material layer 120 serves as a frame in the film assembly. The second material layer 120 can be a single layer of material or a plurality of layers of material.

In some embodiments, the thickness of the second material layer 120 ranges from about 10 nm to about 100 nm. For example, the thickness of the second material layer 120, which is a single layer of material, ranges from about 10 nm to about 100 nm. In certain other embodiments, the thickness of the second material layer 120 ranges from about 10 nm to about 1 [mu]m. For example, the thickness of the second material layer 120 that is a multi-layer material layer ranges from about 10 nm to about 100 nm.

In some embodiments, the thickness of the second material layer 120 is greater than the thickness of the first material layer 110. In some embodiments, the second material layer 120 comprises a germanium-containing material (eg, Si, alpha-Si, etc.), a carbonaceous material (eg, a carbon nanotube, etc.), a metallic material (eg, germanium, molybdenum, zirconium) , nickel, etc.), a compound containing nitrogen, oxygen or hydrogen, other suitable materials, or a combination thereof. The material of the second material layer 120 may be the same or different from the material of the first material layer 110. The material of the second material layer 120 employed in the present disclosure may include any material suitable for the frame without limitation.

In some embodiments, the second material layer 120 can be deposited by a chemical vapor deposition process, a physical vapor deposition process, an atomic layer deposition process, a spin coating process, other suitable methods, or a combination thereof.

Referring to FIGS. 3A and 3B, in some embodiments, an opening 130 is formed in the second material layer 120. The opening 130 exposes the first material layer 110 below the second material layer 120. In other words, the depth D _{1 of the} opening 130 is substantially the same as the thickness of the second material layer 120. In some embodiments, the depth D _{1 of the} opening 130 ranges from about 10 nm to about 1 μm.

In some embodiments, the opening 130 has a generally rectangular (eg, square) top view profile, as shown in FIG. 3B. However, embodiments of the present disclosure are not limited thereto, and the opening 130 may also have a top view profile of a rectangular or other shape. The shape or size of the opening 130 can be changed as needed.

In some embodiments, the opening 130 is formed in the second material layer 120 by an etch process (eg, a wet etch process or other suitable process).

Referring to FIGS. 3A and 3B, in some embodiments, a trench 140 is formed in the second material layer 120. The grooves 140 define the frame of the film assembly such that the dimensions and shape of the grooves 140 generally correspond to the size and shape of the frame of the film assembly.

In some embodiments, the depth D _{2 of the} trench 140 ranges from about 10 nm to about 1 μm. In some embodiments, the depth D _{2 of the} trench 140 is less than the thickness of the second material layer 120 such that the trench 140 does not expose the first material layer 110 below the second material layer 120. In other words, in some embodiments, the depth D _{2 of the} trench 140 is less than the depth D _{1 of the} opening 130.

However, embodiments of the present disclosure are not limited thereto. In some other embodiments, the depth D _{2 of the} trench 140 may be substantially the same as the thickness of the second material layer 120, such that the trench 140 exposes the first material layer. 110. That is, in some embodiments, the depth D _{2 of the} trench 140 is substantially equal to the depth D _{1 of the} opening 130.

In some embodiments, the width of the trench 140 is much smaller than the width of the opening 130, as shown in FIG. 3A. Moreover, the distance between the trench 140 and the opening 130 is also much smaller than the width of the opening 130, as shown in FIGS. 3A and 3B.

In some embodiments, the trench 140 is an annular structure and the trench 140 surrounds the opening 130 as shown in FIG. 3B. In some embodiments, the trench 140 has a top view profile that is generally rectangular (eg, square). However, embodiments of the present disclosure are not limited thereto, and the trench 140 may also have a top view profile of a rectangular or other shape. The shape or size of the trench 140 can be varied as desired.

In some embodiments, trenches 140 may be formed in second material layer 120 by an etch process (eg, a wet etch process or other suitable process). In some embodiments, the opening 130 and the trench 140 may be simultaneously formed in the second material layer 120 through the same etching process. However, embodiments of the present disclosure are not limited thereto, and in some other embodiments, the opening 130 and the trench 140 may be formed at different steps. In some embodiments, the etchant used in the wet etching process can be an organic solution or an inorganic solution.

Referring to FIGS. 4A and 4B, in some embodiments, a protective layer 150 is deposited over the second material layer 120. The protective layer 150 serves as a temporary protective structure. In some embodiments, the protective layer 150 fills the opening 130 to cover the exposed first material layer 110, while the trench 140 may be partially or fully filled by the protective layer 150.

In some embodiments, the thickness of the protective layer 150 ranges from about 10 nm to about 100 μm. In some embodiments, the protective layer 150 comprises a photoresist material, a metal material, a polymer material (for example, polymethylmethacrylate (PMMA), polyisoprene or phenolic epoxy resin). (novolac)), organic compounds, or other suitable protective materials.

In some embodiments, the chemical vapor deposition process, the substance The protective layer 150 is deposited by a vapor deposition process, an atomic layer deposition process, a spin coating process, a coating process (eg, an electroplating process, an electroless process, or the like), other suitable methods, or a combination thereof.

Referring to FIGS. 5A and 5B, in some embodiments, a dry etching process (eg, a laser process or other suitable process) is performed along the annular trench 140, the second material layer 120, the first material. The layer 110 and the substrate 100 are partially removed, so that the trench 140 extends through the second material layer 120, the first material layer 110, and the substrate 100, thereby removing the protective layer 150, the second material layer 120, and the outer side of the trench 140. A material layer 110 and a substrate 100.

In some embodiments, the laser process can use a continuous laser or a pulsed laser. The medium used in the laser process can be a gas, a solid or a liquid. The pulse width of a pulsed laser may be in nanosecond (ns), picosecond (ps), or femtosecond (fs). In some embodiments, the laser process can use ultrafast laser pulses, that is, the pulse width in picoseconds or femtoseconds.

According to some embodiments of the present disclosure, a dry etching process is used instead of a wet etching process to remove excess material layers, for example, a laser process using a small destructive force (low stress variation and low thermal variation) can be used to avoid a small thickness. A material layer 110 is distorted and damaged, and the cut or ablated second material layer 120 and first material layer 110 have substantially straight but not rough edge sidewalls.

According to some embodiments, since a trench 140 is formed in the second material layer 120 first, the amount of material to be removed during the laser process can be reduced, thereby facilitating the smooth removal of excess lasers by a small destructive force. Material layer It is possible to prevent the first material layer 110 from being damaged.

Moreover, since the protective layer 150 is deposited on the second material layer 120, the first material layer 110 can be prevented from being contaminated during the laser process, thereby ensuring that the first material layer 110 does not cause defects. In this way, it is not necessary to perform a difficult cleaning step on the first material layer 110.

Referring to FIGS. 6A and 6B, in some embodiments, the remaining portion of the protective layer 150 is removed after the laser process is performed. In some embodiments, the protective layer 150 can be removed by an etching process, a plasma process, or other suitable process.

Next, in some embodiments, an etch process, a plasma process, or other suitable process is performed to remove the remainder of the substrate 100 from the first material layer 110, as shown in FIGS. 6A and 6B.

After the residual substrate 100 is removed, the film assembly 200 is formed as shown in Figs. 6A and 6B. The central portion 110A of the first material layer 110 serves as the protective film 170 in the thin film assembly 200, and the edge portion 110B of the first material layer 110 and the second material layer 120 above the edge portion 110B collectively serve as the frame 180 of the thin film assembly 200. In other words, the protective film 170 and the frame 180 of the film assembly 200 are substantially integrally formed, and the adhesive film 170 and the frame 180 may not have an adhesive layer.

Referring to FIGS. 7A and 7B, in some embodiments, the film assembly 200 is further assembled on the substrate 300. For example, the film assembly 200 is assembled to the substrate 300 with the opening 130 facing the substrate 300. In some embodiments, the film assembly 200 is fixedly attached to the substrate 300 through an adhesive layer 190. The adhesive layer 190 is interposed between the frame 180 of the film assembly 200 and the substrate 300. In general, sticking Layer 190 includes polyurethanes, polyalkenes, or other suitable adhesive materials. In certain other embodiments, the film assembly 200 can be assembled to the substrate 300 without an adhesive layer.

In some embodiments, substrate 300 is a mask or other component that can mount thin film assembly 200. For example, the substrate 300 is a mask for an extreme ultraviolet (EUV) lithography process or other lithography process, such as a reflective reticle.

In certain embodiments, substrate 300 includes a transparent substrate (eg, glass, quartz, or other suitable material), as well as a pattern of opaque materials (eg, chromium, molybdenum, or other suitable materials). In some embodiments, the film assembly 200 is assembled at a specific distance above the substrate 300, the distance being selected such that any dust or particles on the film 170 remain away from the focal length during the lithography process. Projected on the layer of material to be patterned, so that no defects are caused and the accuracy of the lithography process is reduced.

In some embodiments, the size of the substrate 300 is greater than the size of the film assembly 200. In some embodiments, substrate 300 and film assembly 200 have substantially the same shape. However, the embodiments of the present disclosure are not limited, and the film assembly 200 can be assembled to the substrate 300 having any size, thickness, and shape as needed.

The embodiments of the present disclosure have many variations. For example, FIGS. 4A and 4B illustrate that the protective layer 150 is deposited after the opening 130 and the trench 140 are formed. However, embodiments of the present disclosure are not limited thereto, and in some other embodiments, The protective layer 150 is deposited after the opening 130 is formed and before the trench 140 is formed.

8 through 10 are schematic cross-sectional views showing a method of fabricating a thin film assembly in accordance with some embodiments. In some embodiments, the steps of Figures 8 through 10 can be substituted for the steps of Figures 3A through 4A and Figures 3B through 4B.

Referring to FIG. 8, a structure as shown in FIG. 2A is provided, and an opening 130 is formed in the second material layer 120. The opening 130 exposes the first material layer 110 below the second material layer 120.

Next, referring to FIG. 9, a protective layer 150 is deposited on the second material layer 120, as shown in FIG. The protective layer 150 is filled in the opening 130 to cover the exposed first material layer 110. Thereafter, a trench 152 is formed in the protective layer 150 as shown in FIG. The trench 152 exposes the second material layer 120 under the protective layer 150.

The grooves 152 are used to define the frame of the film assembly, and thus the size and shape of the grooves 152 generally correspond to the size and shape of the frame of the film assembly. In some embodiments, the groove 152 is an annular structure and the groove 152 surrounds the opening 130 as viewed from above. In some embodiments, the grooves 152 have a top view profile that is generally rectangular (eg, square). However, embodiments of the present disclosure are not limited thereto, and the grooves 152 may also have a top view profile of a rectangular or other shape. The shape or size of the grooves 152 can be varied as desired.

In some embodiments, the protective layer 150 includes a photoresist material, and a trench 152 is formed in the protective layer 150 through an exposure process and a development process.

Referring to FIG. 10, the trench 140 is formed in the second material layer 120 along the trench 152. Therefore, the trench 140 is substantially the same size and shape as the trench 152. Moreover, the size and shape of the grooves 140 also substantially correspond to the size and shape of the frame of the film assembly.

Thereafter, a dry etching process is performed along the trenches 152 and the trenches 140. (eg, a laser process or other suitable process), thereby removing the protective layer 150, the second material layer 120, the first material layer 110, and the substrate 100 outside the trench 152 and the trench 140, as shown in FIGS. 5A and 5B. The figure shows.

The present disclosure provides various embodiments of a method of making a film assembly. The embodiments of the present disclosure have many advantages. The use of a dry etch process (e.g., a laser process) in the fabrication of the frame of the film assembly to remove excess material layers, rather than a wet etch process, can prevent the film from being twisted, cracked, or otherwise damaged.

Furthermore, before the above-described laser process, the grooves corresponding to the frame of the film assembly are formed, which can reduce the amount of material to be removed during the laser process, thereby facilitating the definition of the frame of the film assembly and reducing The laser processing time enables the use of a laser with a low destructive force to smoothly remove excess material layers, thereby preventing the film from being damaged as much as possible. Moreover, since the protective layer is deposited on the upper side of the film, the film can be prevented from being contaminated or destroyed during the laser process, so that the film assembly can be ensured with good quality without defects.

Further, the film assembly can be applied to a mask of a lithography process. By using the film assembly of the present invention as a mask film, the quality of the mask can be improved, and the precision of the lithography process can be improved, and the reliability of the integrated circuit component or the semiconductor device produced thereby can be remarkably improved.

According to certain embodiments, a method of making a film assembly is provided. A method of fabricating a thin film assembly includes forming a first material layer on a wafer, the first material layer being a light transmissive film. A second material layer is formed on the first material layer. An opening is formed in the second material layer, the opening exposing a central portion of the first material layer. A trench is formed in the second material layer, the trench surrounding the opening. A protective layer is formed on the second material layer, and the protective layer is filled in the opening to cover the central portion of the first material layer. Along the ditch The trench is subjected to a laser process such that the trench extends through the second material layer and the first material layer to remove the second material layer and the first material layer outside the trench. After the laser process, the protective layer and the wafer are removed to form a thin film component.

According to certain embodiments, a method of making a film assembly is provided. A method of fabricating a film assembly includes forming a first material layer on a substrate, the first material layer being a light transmissive film. A second material layer is formed on the first material layer, the second material layer having a thickness greater than a thickness of the first material layer. An opening is formed in the second material layer, the opening exposing the first material layer. A protective layer is formed on the second material layer, and the protective layer fills the opening to cover the exposed first material layer. A first trench is formed within the protective layer, the first trench exposing the second material layer and surrounding the opening. A second trench is formed in the second material layer along the first trench, the second trench surrounding the opening. Performing a laser process along the first trench and the second trench such that the second trench extends through the second material layer and the first material layer to remove the second material layer and the first material outside the second trench Floor. After the laser process, the protective layer and the substrate are removed to form a thin film component.

According to certain embodiments, a method of making a film assembly is provided. A method of fabricating a film assembly includes forming a first material layer on a substrate, the first material layer being a light transmissive film. A second material layer is formed on the first material layer. An opening is formed in the second material layer, the opening exposing a central portion of the first material layer. A trench is formed in the second material layer, the trench surrounding the opening. A dry etching process is performed along the trench such that the trench extends through the second material layer, the first material layer, and the substrate, and the second material layer, the first material layer, and the substrate outside the trench are removed. After the dry etching process, the residual substrate is removed to form a thin film component. The film assembly has a protective film and a frame, and the protective film is composed of a central portion of the first material layer, and the frame is composed of The edge portion of the first material layer and the second material layer on the edge portion are formed. The film assembly is assembled to the mask.

The above summary of the features of the present disclosure is to be understood by those of ordinary skill in the art and It should be understood by those of ordinary skill in the art that the present invention may be readily utilized as the basis of the embodiments of the present disclosure. It is to be understood that those skilled in the art can understand that the structure or the process of the above-described equivalents are not departing from the spirit and scope of the disclosure, and may be modified or replaced without departing from the spirit and scope of the disclosure. With retouching.

100‧‧‧Base

110‧‧‧First material layer

120‧‧‧Second material layer

130‧‧‧ openings

140‧‧‧ trench

150‧‧‧protection layer

Claims (10)

A method of manufacturing a thin film assembly, comprising: forming a first material layer on a wafer, wherein the first material layer is a light transmissive film; forming a second material layer on the first material layer; Forming an opening in the two material layers, wherein the opening exposes a central portion of the first material layer; forming a trench in the second material layer, wherein the trench surrounds the opening; forming on the second material layer a protective layer, wherein the protective layer fills the opening to cover the central portion of the first material layer; performing a laser process along the trench such that the trench extends through the second material layer and a first material layer to remove the second material layer and the first material layer outside the trench; and after performing the laser process, removing the protective layer and the wafer to form a thin film component. The method of manufacturing a thin film module according to claim 1, wherein a width of the groove is smaller than a width of the opening, and a depth of the groove is less than or equal to a depth of the opening. The method of manufacturing a thin film module according to claim 1 or 2, wherein the opening and the trench are formed in the second material layer through the same wet etching process, and the protective layer fills the trench . The method of manufacturing a film assembly according to claim 1 or 2, wherein the protective layer is formed on the second material layer after forming the trench and before performing the laser process, and removing the Removing the crystal after the protective layer circle. A method of manufacturing a film assembly, comprising: forming a first material layer on a substrate, wherein the first material layer is a light transmissive film; forming a second material layer on the first material layer, wherein the second The thickness of the material layer is greater than the thickness of the first material layer; an opening is formed in the second material layer, wherein the opening exposes the first material layer; and a protective layer is formed on the second material layer, wherein the protective layer Filling the opening to cover the exposed first material layer; forming a first trench in the protective layer, wherein the first trench exposes the second material layer and surrounds the opening; along the first The trench defines a second trench in the second material layer, wherein the second trench surrounds the opening; and a laser process is performed along the first trench and the second trench to make the second trench a trench extending through the second material layer and the first material layer to remove the second material layer and the first material layer outside the second trench; and removing the protective layer after performing the laser process And the substrate to form a film assembly. The method of fabricating a thin film module according to claim 5, wherein the laser process uses ultrafast laser pulses. The manufacturing method of the film assembly of claim 5, wherein the width of the first groove is smaller than the width of the opening, and the distance between the second groove and the opening is smaller than the width of the opening. . A method of manufacturing a film assembly, comprising: forming a first material layer on a substrate, wherein the first material layer is a light transmissive film; forming a second material layer on the first material layer; Forming an opening in the material layer, wherein the opening exposes a central portion of the first material layer; forming a trench in the second material layer, wherein the trench surrounds the opening; performing a dry etching along the trench The process of extending the trench through the second material layer, the first material layer and the substrate, and removing the second material layer, the first material layer, and the substrate outside the trench; performing the dry mode After the etching process, the residual substrate is removed to form a film assembly, wherein the film assembly has a protective film and a frame, the protective film is composed of the central portion of the first material layer, the frame is composed of the first An edge portion of the material layer and the second material layer on the edge portion; and the film assembly is assembled on a mask. The method of manufacturing a thin film module according to claim 8 , further comprising: forming a protective layer on the central portion of the first material layer before performing the dry etching process; and performing the dry etching process The protective layer is then removed and before the residual substrate is removed. The method of manufacturing a film assembly according to claim 8 or 9, wherein the film assembly is assembled on the mask through an adhesive layer, and the second material layer is located on the adhesive layer and the first material layer. Between the edge parts.