TWI611479B - Method for forming a thin film assembly - Google Patents
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Abstract
本揭露提供一種薄膜組件的製造方法,包括在一晶圓上形成一第一材料層,第一材料層為一透光薄膜。在第一材料層上形成一第二材料層。在第二材料層內形成一開口,開口露出第一材料層的一中心部分。在第二材料層內形成一溝槽,溝槽環繞開口。在第二材料層上形成一保護層,保護層填入開口,以覆蓋第一材料層的中心部分。沿著溝槽進行一雷射製程,使得溝槽延伸穿過第二材料層及第一材料層,以去除溝槽外側的第二材料層及第一材料層。在進行雷射製程之後,去除保護層及晶圓,以形成一薄膜組件。 The present disclosure provides a method of fabricating a thin film assembly, comprising forming a first material layer on a wafer, the first material layer being a light transmissive film. A second material layer is formed on the first material layer. An opening is formed in the second material layer, the opening exposing a central portion of the first material layer. A trench is formed in the second material layer, the trench surrounding the opening. A protective layer is formed on the second material layer, and the protective layer fills the opening to cover the central portion of the first material layer. A laser process is performed along the trench such that the trench extends through the second material layer and the first material layer to remove the second material layer and the first material layer outside the trench. After the laser process, the protective layer and the wafer are removed to form a thin film component.
Description
本揭露係有關於一種薄膜組件的製造方法,特別為有關於可應用於遮罩(mask)的護膜(pellicle membrane)之薄膜組件的製造方法。 The present disclosure relates to a method of making a film assembly, and more particularly to a method of making a film assembly that can be applied to a pellicle membrane.
半導體積體電路產業歷經快速的成長,積體電路材料及設計技術的進步產生數個世代的積體電路,每一世代的積體電路具有比前一世代更小且更複雜的電路。在積體電路的發展過程中,功能的密度(亦即,每晶片面積內所連接的裝置的數量)通常會增加,且幾何圖形尺寸(亦即,製程中所能製造出的最小元件或線路)縮小。尺寸縮小製程通常提供增加生產效率及降低成本的優點。然而尺寸的縮小也增加了積體電路製程與製造上的複雜度。為了實現這些進步,在積體電路製程及製造上也需要有相似地發展。 The semiconductor integrated circuit industry has experienced rapid growth, and advances in integrated circuit materials and design techniques have produced several generations of integrated circuits. Each generation of integrated circuits has smaller and more complex circuits than the previous generation. In the development of integrated circuits, the density of functions (ie, the number of devices connected per wafer area) typically increases, and the geometry size (ie, the smallest component or line that can be fabricated in the process) ) Zoom out. The downsizing process generally provides the advantage of increasing production efficiency and reducing costs. However, the reduction in size also increases the complexity of the integrated circuit process and manufacturing. In order to achieve these advances, similar developments in integrated circuit manufacturing and manufacturing are also required.
積體電路製程中通常包括在半導體基底上沉積介電層、導電層或半導體層等材料層,且對材料層進行圖案化製程(例如,微影製程及/或蝕刻製程),以在半導體基底上形成積體電路元件。微影製程係將遮罩的圖案轉移至材料層上的技術。一般而言,遮罩上具有保護膜及框架,保護膜通常拉伸展開且邊緣透過黏著劑附著至框架,而框架固定於遮罩上。保護 膜用以避免遮罩受損及/或被微粒汙染。 The integrated circuit process generally includes depositing a material layer such as a dielectric layer, a conductive layer or a semiconductor layer on the semiconductor substrate, and patterning the material layer (for example, a lithography process and/or an etching process) to form the semiconductor substrate. An integrated circuit component is formed thereon. The lithography process is a technique for transferring the pattern of the mask onto the layer of material. In general, the mask has a protective film and a frame, the protective film is usually stretched and the edge is adhered to the frame by an adhesive, and the frame is fixed to the mask. protection The membrane is used to avoid damage to the mask and/or contamination by particles.
然而,保護膜通常為透光的薄膜,根據某些傳統的製程步驟,可能造成保護膜變得扭曲、破裂或以其他方式受損,且在某些製程步驟期間保護膜容易受到汙染,而對保護膜進行清潔具有難度,因此無法製作出品質良好的保護膜。 However, the protective film is usually a light transmissive film, which may cause the protective film to become distorted, cracked or otherwise damaged according to some conventional manufacturing steps, and the protective film is susceptible to contamination during certain process steps, and It is difficult to clean the protective film, so it is impossible to produce a good quality protective film.
有鑒於此,需要尋求能夠解決上述問題的薄膜組件的製造方法。 In view of the above, there is a need to find a method of manufacturing a thin film module that can solve the above problems.
本揭露實施例係提供一種薄膜組件的製造方法,包括在一晶圓上形成一第一材料層,第一材料層為一透光薄膜。在第一材料層上形成一第二材料層。在第二材料層內形成一開口,開口露出第一材料層的一中心部分。在第二材料層內形成一溝槽,溝槽環繞開口。在第二材料層上形成一保護層,保護層填入開口,以覆蓋第一材料層的中心部分。沿著溝槽進行一雷射製程,使得溝槽延伸穿過第二材料層及第一材料層,以去除溝槽外側的第二材料層及第一材料層。在進行雷射製程之後,去除保護層及晶圓,以形成一薄膜組件。 Embodiments of the present disclosure provide a method of fabricating a thin film assembly, comprising forming a first material layer on a wafer, the first material layer being a light transmissive film. A second material layer is formed on the first material layer. An opening is formed in the second material layer, the opening exposing a central portion of the first material layer. A trench is formed in the second material layer, the trench surrounding the opening. A protective layer is formed on the second material layer, and the protective layer fills the opening to cover the central portion of the first material layer. A laser process is performed along the trench such that the trench extends through the second material layer and the first material layer to remove the second material layer and the first material layer outside the trench. After the laser process, the protective layer and the wafer are removed to form a thin film component.
本揭露實施例係提供一種薄膜組件的製造方法,包括在一基底上形成一第一材料層,第一材料層為一透光薄膜。在第一材料層上形成一第二材料層,第二材料層的厚度大於第一材料層的厚度。在第二材料層內形成一開口,開口露出第一材料層。在第二材料層上形成一保護層,保護層填入開口,以覆蓋露出的第一材料層。在保護層內形成一第一溝槽,第一溝槽露出第二材料層且環繞開口。沿著第一溝槽在第二材 料層內形成一第二溝槽,第二溝槽環繞開口。沿著第一溝槽及第二溝槽進行一雷射製程,使得第二溝槽延伸穿過第二材料層及第一材料層,以去除第二溝槽外側的第二材料層及第一材料層。在進行雷射製程之後,去除保護層及基底,以形成一薄膜組件。 The disclosed embodiments provide a method of fabricating a thin film assembly, comprising forming a first material layer on a substrate, the first material layer being a light transmissive film. A second material layer is formed on the first material layer, the second material layer having a thickness greater than a thickness of the first material layer. An opening is formed in the second material layer, the opening exposing the first material layer. A protective layer is formed on the second material layer, and the protective layer fills the opening to cover the exposed first material layer. A first trench is formed in the protective layer, the first trench exposing the second material layer and surrounding the opening. Along the first groove in the second material A second trench is formed in the layer, and the second trench surrounds the opening. Performing a laser process along the first trench and the second trench such that the second trench extends through the second material layer and the first material layer to remove the second material layer outside the second trench and the first Material layer. After the laser process, the protective layer and the substrate are removed to form a film assembly.
本揭露實施例係提供一種薄膜組件的製造方法,包括在一基底上形成一第一材料層,第一材料層為一透光薄膜。在第一材料層上形成一第二材料層。在第二材料層內形成一開口,開口露出第一材料層的一中心部分。在第二材料層內形成一溝槽,溝槽環繞開口。沿著溝槽進行一乾式蝕刻製程,使得溝槽延伸穿過第二材料層、第一材料層及基底,且去除溝槽外側的第二材料層、第一材料層及基底。在進行乾式蝕刻製程之後,去除殘留的基底,以形成一薄膜組件。薄膜組件具有一護膜及一框架,護膜由第一材料層的中心部分所構成,框架由第一材料層的一邊緣部分及位於邊緣部分上的第二材料層所構成。將薄膜組件組裝於一遮罩上。 The disclosed embodiments provide a method of fabricating a thin film assembly, comprising forming a first material layer on a substrate, the first material layer being a light transmissive film. A second material layer is formed on the first material layer. An opening is formed in the second material layer, the opening exposing a central portion of the first material layer. A trench is formed in the second material layer, the trench surrounding the opening. A dry etching process is performed along the trench such that the trench extends through the second material layer, the first material layer and the substrate, and the second material layer, the first material layer, and the substrate outside the trench are removed. After the dry etching process, the residual substrate is removed to form a thin film component. The film assembly has a cover film and a frame formed by a central portion of the first material layer, the frame being formed by an edge portion of the first material layer and a second material layer on the edge portion. The film assembly is assembled on a mask.
100‧‧‧基底 100‧‧‧Base
110‧‧‧第一材料層 110‧‧‧First material layer
110A‧‧‧中心部分 110A‧‧‧ central part
110B‧‧‧邊緣部分 110B‧‧‧Edge section
120‧‧‧第二材料層 120‧‧‧Second material layer
130‧‧‧開口 130‧‧‧ openings
140‧‧‧溝槽 140‧‧‧ trench
150‧‧‧保護層 150‧‧‧protection layer
152‧‧‧溝槽 152‧‧‧ trench
170‧‧‧護膜 170‧‧‧Shield
180‧‧‧框架 180‧‧‧Frame
190‧‧‧黏著層 190‧‧‧Adhesive layer
200‧‧‧薄膜組件 200‧‧‧film components
300‧‧‧基底 300‧‧‧Base
D1、D2‧‧‧深度 D 1 , D 2 ‧‧‧ Depth
第1A至7A圖係繪示出根據某些實施例之薄膜組件的製造方法的剖面示意圖。 1A through 7A are cross-sectional schematic views showing a method of fabricating a thin film assembly in accordance with some embodiments.
第1B至7B圖係繪示出根據某些實施例之薄膜組件的製造方法的平面示意圖。 1B through 7B are schematic plan views showing a method of fabricating a thin film assembly in accordance with some embodiments.
第8至10圖係繪示出根據某些實施例之薄膜組件的製造方法的剖面示意圖。 8 through 10 are schematic cross-sectional views showing a method of fabricating a thin film assembly in accordance with some embodiments.
以下的揭露內容提供許多不同的實施例或範例,以實施本揭露的不同特徵。而本說明書以下的揭露內容是敘述各個構件及其排列方式的特定範例,以求簡化發明的說明。當然,這些特定的範例並非用以限定本揭露。例如,若是本說明書以下的揭露內容敘述了將一第一特徵形成於一第二特徵之上或上方,即表示其包含了所形成的上述第一特徵與上述第二特徵是直接接觸的實施例,亦包含了尚可將附加的特徵形成於上述第一特徵與上述第二特徵之間,而使上述第一特徵與上述第二特徵可能未直接接觸的實施例。另外,本揭露的說明中不同範例可能使用重複的參考符號及/或用字。這些重複符號或用字係為了簡化與清晰的目的,並非用以限定各個實施例及/或所述外觀結構之間的關係。 The following disclosure provides many different embodiments or examples to implement various features of the present disclosure. The disclosure of the present specification is a specific example of the various components and their arrangement in order to simplify the description of the invention. Of course, these specific examples are not intended to limit the disclosure. For example, if the disclosure of the present specification describes forming a first feature on or above a second feature, that is, it includes an embodiment in which the formed first feature is in direct contact with the second feature. Also included is an embodiment in which additional features are formed between the first feature and the second feature described above, such that the first feature and the second feature may not be in direct contact. In addition, different examples in the description of the disclosure may use repeated reference symbols and/or words. These repeated symbols or words are not intended to limit the relationship between the various embodiments and/or the appearance structures for the purpose of simplicity and clarity.
再者,為了方便描述圖式中一元件或特徵部件與另一(複數)元件或(複數)特徵部件的關係,可使用空間相關用語,例如“在...之下”、“下方”、“下部”、“上方”、“上部”及類似的用語等。可以理解的是,除了圖式所繪示的方位之外,空間相關用語涵蓋使用或操作中的裝置的不同方位。所述裝置也可被另外定位(例如,旋轉90度或者位於其他方位),並對應地解讀所使用的空間相關用語的描述。可以理解的是,在所述方法之前、期間及之後,可提供額外的操作步驟,且在某些方法實施例中,所述的某些操作步驟可被替代或省略。 Furthermore, for convenience of describing the relationship of one element or feature in the drawings to another (plural) element or (complex) feature, space-related terms such as "below", "below", "lower", "above", "upper" and similar terms. It will be understood that the spatially relative terms encompass different orientations of the device in use or operation, in addition to the orientation depicted in the drawings. The device may also be additionally positioned (eg, rotated 90 degrees or at other orientations) and the description of the spatially relevant terms used may be interpreted accordingly. It will be appreciated that additional operational steps may be provided before, during, and after the method, and in some method embodiments, some of the operational steps may be replaced or omitted.
以下所討論的實施例可能討論特定的內容,例如所製作出的薄膜組件可以應用於遮罩(亦可稱為光罩 (photomask)或網線(reticle))的護膜(pellicle membrane)。所屬技術領域中具有通常知識者閱讀所揭露內容可輕易理解在其他實施例中可考慮其他應用,例如薄膜組件的製造方法可以應用於任何具有框架的薄膜,而不限定於上述護膜。 The embodiments discussed below may discuss specific aspects, such as the fabricated thin film component that can be applied to a mask (also known as a mask) (photomask) or reticle (pellicle membrane). Those skilled in the art will readily appreciate that other applications may be considered in other embodiments. For example, the method of fabricating a film assembly can be applied to any film having a frame, and is not limited to the above-described film.
應注意的是,此處所討論的實施例可能未必敘述出可能存在於結構內的每一個部件或特徵。舉例來說,圖式中可能省略一個或多個部件,例如當部件的討論說明可能足以傳達實施例的各個樣態時可能將其從圖式中省略。再者,此處所討論的方法實施例可能以特定的進行順序來討論,然而在其他方法實施例中,可以以任何合理的順序進行。 It should be noted that the embodiments discussed herein may not necessarily describe every component or feature that may be present within the structure. For example, one or more components may be omitted from the drawings, such as may be omitted from the drawings when the description of the components may be sufficient to convey various aspects of the embodiments. Furthermore, the method embodiments discussed herein may be discussed in a particular order, but in other method embodiments, the order may be performed in any reasonable order.
在具體說明實施例之前,簡要地說明本揭露實施例的某些有益的特徵及樣態。概括而言,本揭露提供一種薄膜組件的製造方法,在製作薄膜組件的框架時使用乾式蝕刻製程(例如,雷射製程),能夠避免薄膜扭曲、破裂或以其他方式受損,因此可製作出品質良好的薄膜組件。特別是,如以下所揭露的實施例,在進行上述雷射製程之前,先形成對應於薄膜組件的框架之溝槽以及形成保護層,溝槽有助於順利進行雷射製程,而保護層防止薄膜在製程期間(特別是雷射製程期間)受到汙染或破壞,因此能夠確保薄膜組件具有優良的品質而無缺陷問題。 Before describing embodiments, certain advantageous features and aspects of the disclosed embodiments will be briefly described. In summary, the present disclosure provides a method of fabricating a thin film module that uses a dry etching process (eg, a laser process) to fabricate a frame of the thin film assembly, thereby preventing the film from being twisted, broken, or otherwise damaged, thereby enabling fabrication Good quality film components. In particular, as in the embodiments disclosed below, prior to performing the laser process described above, a trench corresponding to the frame of the thin film assembly is formed and a protective layer is formed, the trench helps to smoothly perform the laser process, and the protective layer prevents The film is contaminated or destroyed during the process (especially during the laser process), thus ensuring that the film assembly has excellent quality without defects.
以下描述本揭露的某些實施例。第1A至7A圖係繪示出根據某些實施例之薄膜組件的製造方法的剖面示意圖。第1B至7B圖係繪示出根據某些實施例之薄膜組件的製造方法的平面示意圖。 Certain embodiments of the present disclosure are described below. 1A through 7A are cross-sectional schematic views showing a method of fabricating a thin film assembly in accordance with some embodiments. 1B through 7B are schematic plan views showing a method of fabricating a thin film assembly in accordance with some embodiments.
請參照第1A圖及第1B圖,提供一基底100。基底100係作為暫時性載板。基底100可包括半導體材料(例如,矽或其他半導體材料)、金屬材料或其他適合作為載板的材料。在某些實施例中,基底100為一晶圓。在某些實施例中,基底100具有大致上為圓形的上視輪廓,如第1B圖所示。然而,本揭露的實施例並不限定於此,基底100也可能具有矩形或其他形狀的上視輪廓。 Referring to FIGS. 1A and 1B, a substrate 100 is provided. The substrate 100 serves as a temporary carrier. Substrate 100 can comprise a semiconductor material (eg, germanium or other semiconductor material), a metallic material, or other material suitable as a carrier. In some embodiments, substrate 100 is a wafer. In some embodiments, the substrate 100 has a generally circular top view profile as shown in FIG. 1B. However, embodiments of the present disclosure are not limited thereto, and the substrate 100 may also have a top view profile of a rectangular or other shape.
請參照第2A圖及第2B圖,在某些實施例中,在基底100上沉積一第一材料層110。第一材料層110主要作為薄膜組件中透光的薄膜。第一材料層110可為單層材料層或多層材料層。 Referring to FIGS. 2A and 2B, in some embodiments, a first material layer 110 is deposited on the substrate 100. The first material layer 110 serves primarily as a light transmissive film in the film assembly. The first material layer 110 can be a single layer of material or a plurality of layers of material.
在某些實施例中,第一材料層110的厚度介於大約10nm至大約1μm的範圍。在某些實施例中,第一材料層110包括含矽材料(例如,矽(Si)、alpha-Si等)、含碳材料(例如,碳奈米管等)、金屬材料(例如,釕(Ru)、鉬(Mo)、鋯(Zr)、鎳(Ni)等)、含有氮、氧或氫的化合物、其他適合的材料、或其組合。本揭露所採用的第一材料層110的材料可包括任何適用於薄膜的材料而並不受限。在某些實施例中,適當選擇第一材料層110的材料及厚度,使得第一材料層110可作為透光的薄膜。 In some embodiments, the thickness of the first material layer 110 ranges from about 10 nm to about 1 [mu]m. In certain embodiments, the first material layer 110 comprises a germanium-containing material (eg, germanium (Si), alpha-Si, etc.), a carbonaceous material (eg, a carbon nanotube, etc.), a metallic material (eg, germanium ( Ru), molybdenum (Mo), zirconium (Zr), nickel (Ni), etc., compounds containing nitrogen, oxygen or hydrogen, other suitable materials, or combinations thereof. The material of the first material layer 110 employed in the present disclosure may include any material suitable for the film without limitation. In some embodiments, the material and thickness of the first material layer 110 are suitably selected such that the first material layer 110 acts as a light transmissive film.
在某些實施例中,可透過化學氣相沉積(chemical vapor deposition,CVD)製程、物理氣相沉積(physical vapor deposition,PVD)製程、原子層沉積(atomic layer deposition,ALD)製程、旋塗製程、其他適合的方法或其組合沉積第一材料層110。 In some embodiments, the chemical vapor deposition (CVD) process, the physical vapor deposition (PVD) process, the atomic layer deposition (ALD) process, and the spin coating process can be performed. The first material layer 110 is deposited by other suitable methods or combinations thereof.
接著,在某些實施例中,在第一材料層110上沉積一第二材料層120,如第2A圖及第2B圖所示。第二材料層120係作為薄膜組件中的框架。第二材料層120可為單層材料層或多層材料層。 Next, in some embodiments, a second material layer 120 is deposited over the first material layer 110, as shown in Figures 2A and 2B. The second material layer 120 serves as a frame in the film assembly. The second material layer 120 can be a single layer of material or a plurality of layers of material.
在某些實施例中,第二材料層120的厚度介於大約10nm至大約100nm的範圍。例如,為單層材料層的第二材料層120的厚度介於大約10nm至大約100nm的範圍。在某些其他實施例中,第二材料層120的厚度介於大約10nm至大約1μm的範圍。例如,為多層材料層的第二材料層120的厚度介於大約10nm至大約100nm的範圍。 In some embodiments, the thickness of the second material layer 120 ranges from about 10 nm to about 100 nm. For example, the thickness of the second material layer 120, which is a single layer of material, ranges from about 10 nm to about 100 nm. In certain other embodiments, the thickness of the second material layer 120 ranges from about 10 nm to about 1 [mu]m. For example, the thickness of the second material layer 120 that is a multi-layer material layer ranges from about 10 nm to about 100 nm.
在某些實施例中,第二材料層120的厚度大於第一材料層110的厚度。在某些實施例中,第二材料層120包括含矽材料(例如,Si、alpha-Si等)、含碳材料(例如,碳奈米管等)、金屬材料(例如,釕、鉬、鋯、鎳等)、含有氮、氧或氫的化合物、其他適合的材料、或其組合。第二材料層120的材料可相同或不同於第一材料層110的材料。本揭露所採用的第二材料層120的材料可包括任何適用於框架的材料而並不受限。 In some embodiments, the thickness of the second material layer 120 is greater than the thickness of the first material layer 110. In some embodiments, the second material layer 120 comprises a germanium-containing material (eg, Si, alpha-Si, etc.), a carbonaceous material (eg, a carbon nanotube, etc.), a metallic material (eg, germanium, molybdenum, zirconium) , nickel, etc.), a compound containing nitrogen, oxygen or hydrogen, other suitable materials, or a combination thereof. The material of the second material layer 120 may be the same or different from the material of the first material layer 110. The material of the second material layer 120 employed in the present disclosure may include any material suitable for the frame without limitation.
在某些實施例中,可透過化學氣相沉積製程、物理氣相沉積製程、原子層沉積製程、旋塗製程、其他適合的方法或其組合沉積第二材料層120。 In some embodiments, the second material layer 120 can be deposited by a chemical vapor deposition process, a physical vapor deposition process, an atomic layer deposition process, a spin coating process, other suitable methods, or a combination thereof.
請參照第3A圖及第3B圖,在某些實施例中,在第二材料層120內形成一開口130。開口130露出第二材料層120下方的第一材料層110。換言之,開口130的深度D1大致上相同於第二材料層120的厚度。在某些實施例中,開口130的深度D1 介於大約10nm至大約1μm的範圍。 Referring to FIGS. 3A and 3B, in some embodiments, an opening 130 is formed in the second material layer 120. The opening 130 exposes the first material layer 110 below the second material layer 120. In other words, the depth D 1 of the opening 130 is substantially the same as the thickness of the second material layer 120. In some embodiments, the depth D 1 of the opening 130 ranges from about 10 nm to about 1 μm.
在某些實施例中,開口130具有大致上為矩形(例如,正方形)的上視輪廓,如第3B圖所示。然而,本揭露的實施例並不限定於此,開口130也可能具有長方形或其他形狀的上視輪廓。可以根據需要改變開口130的形狀或尺寸。 In some embodiments, the opening 130 has a generally rectangular (eg, square) top view profile, as shown in FIG. 3B. However, embodiments of the present disclosure are not limited thereto, and the opening 130 may also have a top view profile of a rectangular or other shape. The shape or size of the opening 130 can be changed as needed.
在某些實施例中,透過蝕刻製程(例如,濕式蝕刻製程或其他適合的製程)在第二材料層120內形成開口130。 In some embodiments, the opening 130 is formed in the second material layer 120 by an etch process (eg, a wet etch process or other suitable process).
請參照第3A圖及第3B圖,在某些實施例中,在第二材料層120內形成一溝槽140。溝槽140定義出薄膜組件的框架,因此溝槽140的尺寸及形狀大致上對應於薄膜組件的框架的尺寸及形狀。 Referring to FIGS. 3A and 3B, in some embodiments, a trench 140 is formed in the second material layer 120. The grooves 140 define the frame of the film assembly such that the dimensions and shape of the grooves 140 generally correspond to the size and shape of the frame of the film assembly.
在某些實施例中,溝槽140的深度D2介於大約10nm至大約1μm的範圍。在某些實施例中,溝槽140的深度D2小於第二材料層120的厚度,因此溝槽140未露出第二材料層120下方的第一材料層110。換言之,在某些實施例中,溝槽140的深度D2小於開口130的深度D1。 In some embodiments, the depth D 2 of the trench 140 ranges from about 10 nm to about 1 μm. In some embodiments, the depth D 2 of the trench 140 is less than the thickness of the second material layer 120 such that the trench 140 does not expose the first material layer 110 below the second material layer 120. In other words, in some embodiments, the depth D 2 of the trench 140 is less than the depth D 1 of the opening 130.
然而,本揭露的實施例並不限定於此,在某些其他實施例中,溝槽140的深度D2可能大致上相同於第二材料層120的厚度,因此溝槽140露出第一材料層110。也就是說,在某些實施例中,溝槽140的深度D2大致上等於開口130的深度D1。 However, embodiments of the present disclosure are not limited thereto. In some other embodiments, the depth D 2 of the trench 140 may be substantially the same as the thickness of the second material layer 120, such that the trench 140 exposes the first material layer. 110. That is, in some embodiments, the depth D 2 of the trench 140 is substantially equal to the depth D 1 of the opening 130.
在某些實施例中,溝槽140的寬度遠小於開口130的寬度,如第3A圖所示。而且,溝槽140與開口130之間的距離也遠小於開口130的寬度,如第3A圖及第3B圖所示。 In some embodiments, the width of the trench 140 is much smaller than the width of the opening 130, as shown in FIG. 3A. Moreover, the distance between the trench 140 and the opening 130 is also much smaller than the width of the opening 130, as shown in FIGS. 3A and 3B.
在某些實施例中,溝槽140為環形的結構,且溝槽140環繞開口130,如第3B圖所示。在某些實施例中,溝槽140具有大致上為矩形(例如,正方形)的上視輪廓。然而,本揭露的實施例並不限定於此,溝槽140也可能具有長方形或其他形狀的上視輪廓。可以根據需要改變溝槽140的形狀或尺寸。 In some embodiments, the trench 140 is an annular structure and the trench 140 surrounds the opening 130 as shown in FIG. 3B. In some embodiments, the trench 140 has a top view profile that is generally rectangular (eg, square). However, embodiments of the present disclosure are not limited thereto, and the trench 140 may also have a top view profile of a rectangular or other shape. The shape or size of the trench 140 can be varied as desired.
在某些實施例中,可透過蝕刻製程(例如,濕式蝕刻製程或其他適合的製程)在第二材料層120內形成溝槽140。在某些實施例中,可透過同一蝕刻製程在第二材料層120內同時形成開口130及溝槽140。然而,本揭露的實施例並不限定於此,在某些其他實施例中,可在不同步驟形成開口130及溝槽140。在某些實施例中,濕式蝕刻製程所使用的蝕刻劑可為有機溶液或無機溶液。 In some embodiments, trenches 140 may be formed in second material layer 120 by an etch process (eg, a wet etch process or other suitable process). In some embodiments, the opening 130 and the trench 140 may be simultaneously formed in the second material layer 120 through the same etching process. However, embodiments of the present disclosure are not limited thereto, and in some other embodiments, the opening 130 and the trench 140 may be formed at different steps. In some embodiments, the etchant used in the wet etching process can be an organic solution or an inorganic solution.
請參照第4A圖及第4B圖,在某些實施例中,在第二材料層120上沉積一保護層150。保護層150係作為暫時性保護結構。在某些實施例中,保護層150填入開口130,以覆蓋露出的第一材料層110,而溝槽140可能被保護層150局部或全部填充。 Referring to FIGS. 4A and 4B, in some embodiments, a protective layer 150 is deposited over the second material layer 120. The protective layer 150 serves as a temporary protective structure. In some embodiments, the protective layer 150 fills the opening 130 to cover the exposed first material layer 110, while the trench 140 may be partially or fully filled by the protective layer 150.
在某些實施例中,保護層150的厚度介於大約10nm至大約100μm的範圍。在某些實施例中,保護層150包括光阻材料、金屬材料、高分子材料(例如,聚甲基丙烯酸甲酯(polymethylmethacrylate,PMMA)、聚異戊二烯(polyisoprene)或酚醛型環氧樹脂(novolac))、有機化合物、或其他適合的保護材料。 In some embodiments, the thickness of the protective layer 150 ranges from about 10 nm to about 100 μm. In some embodiments, the protective layer 150 comprises a photoresist material, a metal material, a polymer material (for example, polymethylmethacrylate (PMMA), polyisoprene or phenolic epoxy resin). (novolac)), organic compounds, or other suitable protective materials.
在某些實施例中,可透過化學氣相沉積製程、物 理氣相沉積製程、原子層沉積製程、旋塗製程、鍍膜製程(例如,電鍍製程、無電鍍製程或類似的製程)、其他適合的方法或其組合沉積保護層150。 In some embodiments, the chemical vapor deposition process, the substance The protective layer 150 is deposited by a vapor deposition process, an atomic layer deposition process, a spin coating process, a coating process (eg, an electroplating process, an electroless process, or the like), other suitable methods, or a combination thereof.
請參照第5A圖及第5B圖,在某些實施例中,沿著環形的溝槽140進行乾式蝕刻製程(例如,雷射製程或其他適合的製程),第二材料層120、第一材料層110及基底100被局部地去除,使得溝槽140延伸穿過第二材料層120、第一材料層110及基底100,進而去除溝槽140外側的保護層150、第二材料層120、第一材料層110及基底100。 Referring to FIGS. 5A and 5B, in some embodiments, a dry etching process (eg, a laser process or other suitable process) is performed along the annular trench 140, the second material layer 120, the first material. The layer 110 and the substrate 100 are partially removed, so that the trench 140 extends through the second material layer 120, the first material layer 110, and the substrate 100, thereby removing the protective layer 150, the second material layer 120, and the outer side of the trench 140. A material layer 110 and a substrate 100.
在某些實施例中,雷射製程可使用連續式雷射或脈衝式雷射。雷射製程所使用的介質可以是氣體、固體或液體。脈衝式雷射的脈衝寬度可能以奈秒(nanosecond,ns)、皮秒(picosecond,ps)或飛秒(femtosecond,fs)為單位。在某些實施例中,雷射製程可使用超快雷射脈衝(ultrafast laser pulses),亦即脈衝寬度以皮秒或飛秒為單位。 In some embodiments, the laser process can use a continuous laser or a pulsed laser. The medium used in the laser process can be a gas, a solid or a liquid. The pulse width of a pulsed laser may be in nanosecond (ns), picosecond (ps), or femtosecond (fs). In some embodiments, the laser process can use ultrafast laser pulses, that is, the pulse width in picoseconds or femtoseconds.
根據本揭露的某些實施例,使用乾式蝕刻製程而非濕式蝕刻製程去除多餘的材料層,例如選擇使用破壞力小(應力變化及熱變化低)的雷射製程,能夠避免厚度小的第一材料層110扭曲變形及破裂受損,也使得切割或燒蝕後的第二材料層120及第一材料層110具有大致上平直而不粗糙的邊緣側壁。 According to some embodiments of the present disclosure, a dry etching process is used instead of a wet etching process to remove excess material layers, for example, a laser process using a small destructive force (low stress variation and low thermal variation) can be used to avoid a small thickness. A material layer 110 is distorted and damaged, and the cut or ablated second material layer 120 and first material layer 110 have substantially straight but not rough edge sidewalls.
根據某些實施例,由於先在第二材料層120內形成一溝槽140,可減少在進行雷射製程時所需去除的材料量,因此有利於藉由破壞力小的雷射順利去除多餘的材料層,進而盡 可能防止第一材料層110受到破壞。 According to some embodiments, since a trench 140 is formed in the second material layer 120 first, the amount of material to be removed during the laser process can be reduced, thereby facilitating the smooth removal of excess lasers by a small destructive force. Material layer It is possible to prevent the first material layer 110 from being damaged.
再者,由於在第二材料層120上沉積保護層150,因此在進行雷射製程時可避免第一材料層110受到汙染,進而確保第一材料層110不會產生缺陷。如此一來,也可以不必對第一材料層110進行具有難度的清潔步驟。 Moreover, since the protective layer 150 is deposited on the second material layer 120, the first material layer 110 can be prevented from being contaminated during the laser process, thereby ensuring that the first material layer 110 does not cause defects. In this way, it is not necessary to perform a difficult cleaning step on the first material layer 110.
請參照第6A圖及第6B圖,在某些實施例中,在進行雷射製程之後,去除保護層150的剩餘部分。在某些實施例中,可透過蝕刻製程、電漿處理或其他適合的製程,去除保護層150。 Referring to FIGS. 6A and 6B, in some embodiments, the remaining portion of the protective layer 150 is removed after the laser process is performed. In some embodiments, the protective layer 150 can be removed by an etching process, a plasma process, or other suitable process.
接著,在某些實施例中,進行蝕刻製程、電漿處理或其他適合的製程,將基底100的剩餘部分自第一材料層110去除,如第6A圖及第6B圖所示。 Next, in some embodiments, an etch process, a plasma process, or other suitable process is performed to remove the remainder of the substrate 100 from the first material layer 110, as shown in FIGS. 6A and 6B.
在去除殘留的基底100之後,形成了薄膜組件200,如第6A圖及第6B圖所示。第一材料層110的中心部分110A作為薄膜組件200中的護膜170,而第一材料層110的邊緣部分110B及邊緣部分110B上方的第二材料層120共同作為薄膜組件200的框架180。換句話說,薄膜組件200的護膜170及框架180大致上為一體成形,且護膜170與框架180之間可不具有黏著層。 After the residual substrate 100 is removed, the film assembly 200 is formed as shown in Figs. 6A and 6B. The central portion 110A of the first material layer 110 serves as the protective film 170 in the thin film assembly 200, and the edge portion 110B of the first material layer 110 and the second material layer 120 above the edge portion 110B collectively serve as the frame 180 of the thin film assembly 200. In other words, the protective film 170 and the frame 180 of the film assembly 200 are substantially integrally formed, and the adhesive film 170 and the frame 180 may not have an adhesive layer.
請參照第7A圖及第7B圖,在某些實施例中,薄膜組件200進一步組裝於基底300上。例如,薄膜組件200以開口130朝向基底300的方式組裝於基底300上。在某些實施例中,薄膜組件200透過黏著層190固定連接至基底300。黏著層190夾設於薄膜組件200的框架180與基底300之間。一般而言,黏著 層190包括聚胺基甲酸酯(polyurethanes)、聚鏈烯(polyalkenes)或其他適合的黏著材料。在某些其他實施例中,薄膜組件200可不透過黏著層組裝於基底300。 Referring to FIGS. 7A and 7B, in some embodiments, the film assembly 200 is further assembled on the substrate 300. For example, the film assembly 200 is assembled to the substrate 300 with the opening 130 facing the substrate 300. In some embodiments, the film assembly 200 is fixedly attached to the substrate 300 through an adhesive layer 190. The adhesive layer 190 is interposed between the frame 180 of the film assembly 200 and the substrate 300. In general, sticking Layer 190 includes polyurethanes, polyalkenes, or other suitable adhesive materials. In certain other embodiments, the film assembly 200 can be assembled to the substrate 300 without an adhesive layer.
在某些實施例中,基底300為遮罩或其他可裝設薄膜組件200的元件。舉例來說,基底300為用於極紫外光(extreme ultraviolet,EUV)微影製程或其他微影製程的遮罩,例如反射型光罩。 In some embodiments, substrate 300 is a mask or other component that can mount thin film assembly 200. For example, the substrate 300 is a mask for an extreme ultraviolet (EUV) lithography process or other lithography process, such as a reflective reticle.
在某些實施例中,基底300包括透明基材(例如,玻璃、石英或其他適合的材料),以及不透明材料(例如,鉻、鉬或其他適合的材料)所構成的圖案。在某些實施例中,薄膜組件200組裝於基底300上方的特定距離,此距離需選定,使得在進行微影製程時,護膜170上的任何塵埃或顆粒會保持遠離焦距的狀態而不會投影在需圖案化的材料層上,因此不會造成缺陷而降低微影製程的精確度。 In certain embodiments, substrate 300 includes a transparent substrate (eg, glass, quartz, or other suitable material), as well as a pattern of opaque materials (eg, chromium, molybdenum, or other suitable materials). In some embodiments, the film assembly 200 is assembled at a specific distance above the substrate 300, the distance being selected such that any dust or particles on the film 170 remain away from the focal length during the lithography process. Projected on the layer of material to be patterned, so that no defects are caused and the accuracy of the lithography process is reduced.
在某些實施例中,基底300的尺寸大於薄膜組件200的尺寸。在某些實施例中,基底300及薄膜組件200具有大致上相同的形狀。然而,本揭露的實施例並無限定,可以依照需求將薄膜組件200組裝於具有任何尺寸、厚度、形狀的基底300。 In some embodiments, the size of the substrate 300 is greater than the size of the film assembly 200. In some embodiments, substrate 300 and film assembly 200 have substantially the same shape. However, the embodiments of the present disclosure are not limited, and the film assembly 200 can be assembled to the substrate 300 having any size, thickness, and shape as needed.
本揭露的實施例具有許多變化。舉例來說,第4A圖及第4B圖繪示出在形成開口130及溝槽140之後沉積保護層150,然而本揭露的實施例並不限定於此,在某些其他實施例中,可在形成開口130之後且在形成溝槽140之前沉積保護層150。 The embodiments of the present disclosure have many variations. For example, FIGS. 4A and 4B illustrate that the protective layer 150 is deposited after the opening 130 and the trench 140 are formed. However, embodiments of the present disclosure are not limited thereto, and in some other embodiments, The protective layer 150 is deposited after the opening 130 is formed and before the trench 140 is formed.
第8至10圖係繪示出根據某些實施例之薄膜組件的製造方法的剖面示意圖。在某些實施例中,第8至10圖的步驟可取代第3A至4A圖及第3B至4B圖的步驟。 8 through 10 are schematic cross-sectional views showing a method of fabricating a thin film assembly in accordance with some embodiments. In some embodiments, the steps of Figures 8 through 10 can be substituted for the steps of Figures 3A through 4A and Figures 3B through 4B.
請參照第8圖,提供如第2A圖所示的結構,且在第二材料層120內形成一開口130。開口130露出第二材料層120下方的第一材料層110。 Referring to FIG. 8, a structure as shown in FIG. 2A is provided, and an opening 130 is formed in the second material layer 120. The opening 130 exposes the first material layer 110 below the second material layer 120.
接著,請參照第9圖,在第二材料層120上沉積保護層150,如第9圖所示。保護層150填入開口130,以覆蓋露出的第一材料層110。之後,在保護層150內形成一溝槽152,如第9圖所示。溝槽152露出保護層150下方的第二材料層120。 Next, referring to FIG. 9, a protective layer 150 is deposited on the second material layer 120, as shown in FIG. The protective layer 150 is filled in the opening 130 to cover the exposed first material layer 110. Thereafter, a trench 152 is formed in the protective layer 150 as shown in FIG. The trench 152 exposes the second material layer 120 under the protective layer 150.
溝槽152用以定義出薄膜組件的框架,因此溝槽152的尺寸及形狀大致上對應於薄膜組件的框架的尺寸及形狀。在某些實施例中,溝槽152為環形的結構,且從上視方向來看,溝槽152環繞開口130。在某些實施例中,溝槽152具有大致上為矩形(例如,正方形)的上視輪廓。然而,本揭露的實施例並不限定於此,溝槽152也可能具有長方形或其他形狀的上視輪廓。可以根據需要改變溝槽152的形狀或尺寸。 The grooves 152 are used to define the frame of the film assembly, and thus the size and shape of the grooves 152 generally correspond to the size and shape of the frame of the film assembly. In some embodiments, the groove 152 is an annular structure and the groove 152 surrounds the opening 130 as viewed from above. In some embodiments, the grooves 152 have a top view profile that is generally rectangular (eg, square). However, embodiments of the present disclosure are not limited thereto, and the grooves 152 may also have a top view profile of a rectangular or other shape. The shape or size of the grooves 152 can be varied as desired.
在某些實施例中,保護層150包括光阻材料,且透過曝光製程及顯影製程在保護層150內形成溝槽152。 In some embodiments, the protective layer 150 includes a photoresist material, and a trench 152 is formed in the protective layer 150 through an exposure process and a development process.
請參照第10圖,沿著溝槽152在第二材料層120內形成溝槽140,因此溝槽140的尺寸及形狀大致上相同於溝槽152的尺寸及形狀。而且,溝槽140的尺寸及形狀也大致上對應於薄膜組件的框架的尺寸及形狀。 Referring to FIG. 10, the trench 140 is formed in the second material layer 120 along the trench 152. Therefore, the trench 140 is substantially the same size and shape as the trench 152. Moreover, the size and shape of the grooves 140 also substantially correspond to the size and shape of the frame of the film assembly.
之後,沿著溝槽152及溝槽140進行乾式蝕刻製程 (例如,雷射製程或其他適合的製程),進而去除溝槽152及溝槽140外側的保護層150、第二材料層120、第一材料層110及基底100,如第5A圖及第5B圖所示。 Thereafter, a dry etching process is performed along the trenches 152 and the trenches 140. (eg, a laser process or other suitable process), thereby removing the protective layer 150, the second material layer 120, the first material layer 110, and the substrate 100 outside the trench 152 and the trench 140, as shown in FIGS. 5A and 5B. The figure shows.
本揭露提供薄膜組件的製造方法之各種實施例。本揭露的實施例具有許多優點。在製作薄膜組件的框架時使用乾式蝕刻製程(例如,雷射製程)而非濕式蝕刻製程去除多餘的材料層,能夠避免薄膜扭曲、破裂或以其他方式受損。 The present disclosure provides various embodiments of a method of making a film assembly. The embodiments of the present disclosure have many advantages. The use of a dry etch process (e.g., a laser process) in the fabrication of the frame of the film assembly to remove excess material layers, rather than a wet etch process, can prevent the film from being twisted, cracked, or otherwise damaged.
再者,在進行上述雷射製程之前,先形成對應於薄膜組件的框架之溝槽,可減少在進行雷射製程時所需去除的材料量,因此有利於定義出薄膜組件的框架,並減少雷射製程時間而能夠採用破壞力小的雷射順利去除多餘的材料層,藉此盡可能防止薄膜受到破壞。而且,由於在薄膜的上側沉積保護層,在進行雷射製程時可防止薄膜受到汙染或破壞,因此能夠確保薄膜組件具有良好的品質而無缺陷問題。 Furthermore, before the above-described laser process, the grooves corresponding to the frame of the film assembly are formed, which can reduce the amount of material to be removed during the laser process, thereby facilitating the definition of the frame of the film assembly and reducing The laser processing time enables the use of a laser with a low destructive force to smoothly remove excess material layers, thereby preventing the film from being damaged as much as possible. Moreover, since the protective layer is deposited on the upper side of the film, the film can be prevented from being contaminated or destroyed during the laser process, so that the film assembly can be ensured with good quality without defects.
進一步而言,薄膜組件可應用於微影製程的遮罩。使用本揭露的薄膜組件作為遮罩之護膜,可提升遮罩的品質,改善微影製程的精確度,由此製作出的積體電路元件或半導體裝置的可靠度也顯著地提升。 Further, the film assembly can be applied to a mask of a lithography process. By using the film assembly of the present invention as a mask film, the quality of the mask can be improved, and the precision of the lithography process can be improved, and the reliability of the integrated circuit component or the semiconductor device produced thereby can be remarkably improved.
根據某些實施例,提供一種薄膜組件的製造方法。薄膜組件的製造方法包括在晶圓上形成第一材料層,第一材料層為透光薄膜。在第一材料層上形成第二材料層。在第二材料層內形成開口,開口露出第一材料層的中心部分。在第二材料層內形成溝槽,溝槽環繞開口。在第二材料層上形成保護層,保護層填入開口,以覆蓋第一材料層的中心部分。沿著溝 槽進行雷射製程,使得溝槽延伸穿過第二材料層及第一材料層,以去除溝槽外側的第二材料層及第一材料層。在進行雷射製程之後,去除保護層及晶圓,以形成薄膜組件。 According to certain embodiments, a method of making a film assembly is provided. A method of fabricating a thin film assembly includes forming a first material layer on a wafer, the first material layer being a light transmissive film. A second material layer is formed on the first material layer. An opening is formed in the second material layer, the opening exposing a central portion of the first material layer. A trench is formed in the second material layer, the trench surrounding the opening. A protective layer is formed on the second material layer, and the protective layer is filled in the opening to cover the central portion of the first material layer. Along the ditch The trench is subjected to a laser process such that the trench extends through the second material layer and the first material layer to remove the second material layer and the first material layer outside the trench. After the laser process, the protective layer and the wafer are removed to form a thin film component.
根據某些實施例,提供一種薄膜組件的製造方法。薄膜組件的製造方法包括在基底上形成第一材料層,第一材料層為透光薄膜。在第一材料層上形成第二材料層,第二材料層的厚度大於第一材料層的厚度。在第二材料層內形成開口,開口露出第一材料層。在第二材料層上形成保護層,保護層填入開口,以覆蓋露出的第一材料層。在保護層內形成第一溝槽,第一溝槽露出第二材料層且環繞開口。沿著第一溝槽在第二材料層內形成第二溝槽,第二溝槽環繞開口。沿著第一溝槽及第二溝槽進行雷射製程,使得第二溝槽延伸穿過第二材料層及第一材料層,以去除第二溝槽外側的第二材料層及第一材料層。在進行雷射製程之後,去除保護層及基底,以形成薄膜組件。 According to certain embodiments, a method of making a film assembly is provided. A method of fabricating a film assembly includes forming a first material layer on a substrate, the first material layer being a light transmissive film. A second material layer is formed on the first material layer, the second material layer having a thickness greater than a thickness of the first material layer. An opening is formed in the second material layer, the opening exposing the first material layer. A protective layer is formed on the second material layer, and the protective layer fills the opening to cover the exposed first material layer. A first trench is formed within the protective layer, the first trench exposing the second material layer and surrounding the opening. A second trench is formed in the second material layer along the first trench, the second trench surrounding the opening. Performing a laser process along the first trench and the second trench such that the second trench extends through the second material layer and the first material layer to remove the second material layer and the first material outside the second trench Floor. After the laser process, the protective layer and the substrate are removed to form a thin film component.
根據某些實施例,提供一種薄膜組件的製造方法。薄膜組件的製造方法包括在基底上形成第一材料層,第一材料層為透光薄膜。在第一材料層上形成第二材料層。在第二材料層內形成開口,開口露出第一材料層的中心部分。在第二材料層內形成溝槽,溝槽環繞開口。沿著溝槽進行乾式蝕刻製程,使得溝槽延伸穿過第二材料層、第一材料層及基底,且去除溝槽外側的第二材料層、第一材料層及基底。在進行乾式蝕刻製程之後,去除殘留的基底,以形成薄膜組件。薄膜組件具有護膜及框架,護膜由第一材料層的中心部分所構成,框架由 第一材料層的邊緣部分及位於邊緣部分上的第二材料層所構成。將薄膜組件組裝於遮罩上。 According to certain embodiments, a method of making a film assembly is provided. A method of fabricating a film assembly includes forming a first material layer on a substrate, the first material layer being a light transmissive film. A second material layer is formed on the first material layer. An opening is formed in the second material layer, the opening exposing a central portion of the first material layer. A trench is formed in the second material layer, the trench surrounding the opening. A dry etching process is performed along the trench such that the trench extends through the second material layer, the first material layer, and the substrate, and the second material layer, the first material layer, and the substrate outside the trench are removed. After the dry etching process, the residual substrate is removed to form a thin film component. The film assembly has a protective film and a frame, and the protective film is composed of a central portion of the first material layer, and the frame is composed of The edge portion of the first material layer and the second material layer on the edge portion are formed. The film assembly is assembled to the mask.
以上概略說明了本揭露數個實施例的特徵,使所屬技術領域中具有通常知識者對於後續本揭露的詳細說明可更為容易理解。任何所屬技術領域中具有通常知識者應瞭解到本說明書可輕易作為其它結構或製程的變更或設計基礎,以進行相同於本揭露實施例的目的及/或獲得相同的優點。任何所屬技術領域中具有通常知識者也可理解與上述等同的結構或製程並未脫離本揭露之精神和保護範圍內,且可在不脫離本揭露之精神和範圍內,當可作更動、替代與潤飾。 The above summary of the features of the present disclosure is to be understood by those of ordinary skill in the art and It should be understood by those of ordinary skill in the art that the present invention may be readily utilized as the basis of the embodiments of the present disclosure. It is to be understood that those skilled in the art can understand that the structure or the process of the above-described equivalents are not departing from the spirit and scope of the disclosure, and may be modified or replaced without departing from the spirit and scope of the disclosure. With retouching.
100‧‧‧基底 100‧‧‧Base
110‧‧‧第一材料層 110‧‧‧First material layer
120‧‧‧第二材料層 120‧‧‧Second material layer
130‧‧‧開口 130‧‧‧ openings
140‧‧‧溝槽 140‧‧‧ trench
150‧‧‧保護層 150‧‧‧protection layer
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