TWI608133B - A method of forming oxide layer and epitaxy layer - Google Patents

Description

Method for forming oxide layer and epitaxial layer

The present invention relates to the field of microelectronics, and more particularly to a method of forming an oxide layer and an epitaxial layer.

In the semiconductor manufacturing process, in order to obtain a high quality epitaxial layer, the surface treatment of the wafer is very important. The conventional surface treatment method uses a wet process to form a thin chemical oxide layer by a chemical reagent such as SC-1, thereby protecting the wafer from contamination during subsequent storage, transportation, and the like. However, long-term storage can lead to degradation of the chemical oxide layer, causing the surface of the wafer to be contaminated by substances such as carbon, non-uniform oxides, and metals. Therefore, high temperature pretreatment is required using in situ hydrogen or HCl/H ₂ prior to epitaxial growth.

However, the temperature of this high-temperature pretreatment is usually as high as 900-1200 ° C, which is easy to cause warpage, sliding line deformation of large-diameter wafers, such as wafers with a diameter of 300 mm and 450 mm, and even for a thin 200 mm wafer. It will also have an impact. In addition, such high temperature processing is not suitable for use in some advanced component structures such as FinFET, FDSOI, strain SD, and the like.

U.S. Patent No.: No. 8,318,921 B2 discloses a method of in situ growth of an oxide and tantalum layer in a chemical vapor deposition chamber, which is formed by forming a sacrificial oxide layer prior to epitaxy, and then adding a high temperature baking of hydrogen. The oxide volatilizes to obtain a clean substrate, so that epitaxial growth of germanium can continue in situ on the clean substrate. However, this kind of traditional epitaxial The method of growing the oxidized sacrificial layer in the chamber is less controllable if low temperature oxidation is used, and a high temperature of 900 ° C or higher is required when the hydrogen baking is added to remove the sacrificial oxide layer.

Therefore, it is necessary to find an epitaxial growth surface treatment method with a relatively low processing temperature to overcome various problems caused by high temperature processing of the wafer.

In view of the prior art described above, it is an object of the present invention to provide a method of forming an oxide layer and an epitaxial layer for solving various problems caused by high temperature surface treatment prior to epitaxial growth in the prior art.

In order to achieve the above object and other related objects, the present invention provides a method of forming an oxide layer, comprising the steps of: placing a substrate in a chamber; introducing an oxygen source gas into the chamber, and irradiating the light by ultraviolet rays; The surface of the substrate is oxidized to form an oxide layer.

Preferably, when the oxide layer is formed, the temperature in the chamber is controlled to be 700-800 °C.

Preferably, the oxygen source gas is one or more of O ₂ , O ₃ , N ₂ O, and NO.

Preferably, when the oxide layer is formed, the oxygen source gas has a pass time of 0.5 to 3 min, the oxygen source gas has a flow rate of 50 to 500 sccm, and the chamber has a pressure of 50 to 600 Torr.

Preferably, when irradiated with ultraviolet rays, ultraviolet rays are used in a wavelength of 10 to 400 nm, radiation power is 30 to 200 W/cm ² , and irradiation time is 1 msec to 3 min.

To achieve the above and other related objects, the present invention also provides a method of forming an oxide layer and an epitaxial layer, comprising the steps of: Inserting a substrate in the chamber; introducing an oxygen source gas into the chamber, and oxidizing the surface of the substrate to form a sacrificial oxide layer by ultraviolet irradiation; stopping introduction of the oxygen source gas, and in the chamber Introducing a hydrogen source gas to surface-treat the substrate on which the sacrificial oxide layer is formed, reacting the sacrificial oxide layer with the hydrogen source gas to generate a volatile material, and obtaining a surface-treated substrate; continuing in the chamber Epitaxial growth is performed to form an epitaxial layer on the surface-treated substrate.

Preferably, when the sacrificial oxide layer is formed, the temperature in the chamber is controlled to be 700-800 °C.

Preferably, when the sacrificial oxide layer is formed, the oxygen source gas is one or more of O ₂ , O ₃ , N ₂ O, and NO.

Preferably, when the sacrificial oxide layer is formed, the oxygen source gas has an opening time of 0.5 to 3 min, the oxygen source gas has a flow rate of 50 to 500 sccm, and the chamber has a pressure of 50 to 600 Torr.

Preferably, when the sacrificial oxide layer is formed, the ultraviolet wavelength is 10-400 nm, the radiation power is 30-200 W/cm ² , and the irradiation time is 1 msec-3 min.

Preferably, when the hydrogen source gas is introduced to surface-treat the substrate on which the sacrificial oxide layer is formed, the temperature in the chamber is controlled to be 700 to 800 °C.

Preferably, when the hydrogen source gas is introduced to surface-treat the substrate on which the sacrificial oxide layer is formed, ultraviolet irradiation is performed in the chamber. Further preferably, when the hydrogen source gas is introduced to surface-treat the substrate on which the sacrificial oxide layer is formed, the ultraviolet irradiation uses ultraviolet light having a wavelength of 10 to 400 nm, a radiation power of 30 to 200 W/cm ² , and a radiation time of 1 msec to 3 min. .

Preferably, the hydrogen source gas is H ₂ gas, a mixed gas of HF and H ₂ , or a mixed gas of HCl and H ₂ .

Preferably, when the hydrogen source gas is introduced to surface-treat the substrate on which the sacrificial oxide layer is formed, the hydrogen source gas has an introduction time of 0.5 to 3 min, and the intracavity pressure is 50 to 600 Torr.

Preferably, when the hydrogen source gas is H ₂ gas, the flow rate of H ₂ is 10-30 slm; when the hydrogen source gas is a mixed gas of HF and H ₂ , the flow rate of H ₂ is 10-30 slm, and the flow rate of HF It is 50-500 sccm; when the hydrogen source gas is a mixed gas of HCl and H ₂ , the flow rate of H ₂ is 10-30 slm, and the flow rate of HCl is 50-500 sccm.

Preferably, when the epitaxial growth is performed, infrared irradiation is performed in the chamber. Further preferably, in the case of infrared irradiation, an infrared ray having a wavelength of 750 nm to 100 μm, a radiation power of 50 to 150 W/cm ² and a radiation time of 0.5 to ³ minutes are used.

Preferably, the method of forming an oxide layer and an epitaxial layer according to the present invention further comprises forming a protective oxide layer on the surface of the epitaxial layer formed.

Preferably, when the protective oxide layer is formed, an oxygen source gas is introduced into the chamber, and ultraviolet irradiation is performed in the chamber.

Further preferably, when the protective oxide layer is formed, the introduced oxygen source gas is one or more of O ₂ , O ₃ , N ₂ O, and NO, and the oxygen source gas is introduced in a time of 0.5-3 min, and the oxygen source gas is The flow rate is 50-500 sccm and the pressure in the chamber is 50-600 Torr.

Further preferably, when the protective oxide layer is formed by ultraviolet irradiation, ultraviolet rays are used in a wavelength of 10 to 400 nm, a radiation power is 30 to 200 W/cm ² , and a radiation time is 1 to 3 minutes.

Preferably, when the protective oxide layer is formed, the temperature in the chamber is controlled to be 700-800 °C.

As described above, the method of forming an oxide layer and an epitaxial layer of the present invention has the following advantageous effects: the method of forming an oxide layer and an epitaxial layer of the present invention, forming a sacrificial oxide layer on the surface of the substrate by UV irradiation, and then using hydrogen The source gas is surface-treated with the substrate having the sacrificial oxide layer, thereby obtaining a pure surface suitable for epitaxial growth. After the surface treatment, the epitaxial layer can be grown in situ in the same chamber, and after the epitaxial growth The oxidation can continue to form a protective layer. The surface pretreatment and epitaxial growth of the method of the invention can be completed in situ in the same reaction chamber, the epitaxial efficiency is high, and the production resource consumption is small. Due to the UV irradiation, the epitaxial surface pretreatment process can be performed at a lower temperature than the conventional high temperature surface treatment, such as 700-800 ° C, under the action of UV radiation, thereby avoiding warpage deformation of the wafer caused by high temperature treatment. And other issues. The lower processing temperature allows the present invention to be used in some manufacturing processes that require high temperature processing, such as FinFET, FDSOI, and the like.

S101~S102‧‧‧Steps

S201~S204‧‧‧Steps

Fig. 1 is a schematic view showing a method of forming an oxide layer provided by the present invention.

Fig. 2 is a schematic view showing a method of forming an oxide layer and an epitaxial layer provided by the present invention.

The embodiments of the present invention are described below by way of specific examples, and those skilled in the art can readily understand other advantages and effects of the present invention from the disclosure of the present disclosure. The invention may also be embodied or applied in various specific embodiments, in the present specification. Various modifications and changes can be made without departing from the spirit and scope of the invention. It should be noted that the features in the following embodiments and embodiments may be combined with each other without conflict.

It should be noted that the illustrations provided in the following embodiments merely illustrate the basic concept of the present invention in a schematic manner, and only the components related to the present invention are shown in the drawings, rather than the number and shape of components in actual implementation. Dimensional drawing, the actual type of implementation of each component type, number and proportion can be a random change, and its component layout can be more complicated.

Referring to FIG. 1 , the present invention provides a method of forming an oxide layer, comprising the steps of: S101 placing a substrate in a chamber; S102 introducing an oxygen source gas into the chamber, and irradiating the substrate with ultraviolet rays; The surface is oxidized to form an oxide layer.

Specifically, the chamber may be a vacuum reaction chamber for preparing various films, or other reaction chambers suitable for preparing an oxide layer. The substrate may be a common semiconductor substrate such as a germanium substrate, a germanium substrate, or the like, or other substrates of various materials that require preparation of a surface oxide layer.

In the step S102, when the oxide layer is formed, preferably, the temperature in the chamber is controlled to be 700 to 800 °C. The oxygen source gas is preferably one or more of O ₂ , O ₃ , N ₂ O, NO, or other gases suitable for introduction as an oxygen source. When the oxide layer is formed, the pressure in the chamber is preferably 50 to 600 Torr, and the flow rate of the oxygen source gas may be 50 to 500 sccm. The introduction time of the oxygen source gas is preferably from 0.5 to 3 min. In the case of ultraviolet irradiation, the ultraviolet wavelength used is preferably from 10 to 400 nm, the radiation power is preferably from 30 to 200 W/cm ² , and the irradiation time is preferably from 1 msec to 3 min.

The invention oxidizes on the surface of the substrate by adopting a method of enhancing ultraviolet irradiation When the oxide layer is formed, the temperature in the chamber can be controlled at 700-800 ° C to avoid or reduce the adverse effect of high temperature on the substrate, and the conventional high-temperature oxidation surface oxide layer formation method usually requires 900 ° C or more. high temperature.

Referring to FIG. 2, the present invention also provides a method of forming an oxide layer and an epitaxial layer, comprising the steps of: S201 placing a substrate in a chamber; S202 introducing an oxygen source gas into the chamber, and irradiating with ultraviolet rays Etching the surface of the substrate to form a sacrificial oxide layer; S203 stops introducing the oxygen source gas, and introducing a hydrogen source gas into the chamber to surface-treat the substrate on which the sacrificial oxide layer is formed, The sacrificial oxide layer reacts with the hydrogen source gas to generate a volatile material to obtain a surface-treated substrate; S204 continues to perform epitaxial growth in the chamber to form an epitaxial layer on the surface-treated substrate.

The method can be used for surface pretreatment of epitaxial growth and in situ growth of the epitaxial layer in the same chamber. Specifically, the chamber may be a vacuum reaction chamber suitable for epitaxial growth, such as a reaction chamber of a chemical vapor deposition (CVD) apparatus. The substrate may be a common semiconductor substrate such as a germanium substrate, a germanium substrate, or the like, or a substrate of other materials that can be used for epitaxial growth.

In the step S202, when the sacrificial oxide layer is formed, preferably, the temperature in the chamber is controlled to be 700 to 800 °C.

The oxygen source gas is preferably one or more of O ₂ , O ₃ , N ₂ O, NO, or other gases suitable for introduction as an oxygen source. When the sacrificial oxide layer is formed, the pressure in the chamber is preferably 50 to 600 Torr, and the flow rate of the oxygen source gas may be 50 to 500 sccm. The introduction time of the oxygen source gas is preferably from 0.5 to 3 min. In the case of ultraviolet irradiation, the ultraviolet wavelength used is preferably from 10 to 400 nm, the radiation power is preferably from 30 to 200 W/cm ² , and the irradiation time is preferably from 1 msec to 3 min. Since the sacrificial oxide layer formed in this step is etched away by the reaction in the subsequent step, the thickness of the sacrificial oxide layer may be 1-3 nm depending on the actual situation.

In step S203, when the substrate on which the sacrificial oxide layer is formed is subjected to surface treatment, it is preferable to control the temperature in the chamber to be 700 to 800 °C.

In step S203, when the substrate on which the sacrificial oxide layer is formed is subjected to surface treatment, ultraviolet rays may be irradiated in the chamber, and the hydrogen source gas is favored by the ultraviolet radiation enhancement. Sacrifice the full reaction of the oxide layer. The ultraviolet wavelength used is 10-400 nm, the radiation power is 30-200 W/cm ² , and the irradiation time is 1 msec-3 min.

Specifically, the hydrogen source gas may be hydrogen, a mixed gas of HF and H ₂ , or a mixed gas of HCl and H ₂ . When the substrate on which the sacrificial oxide layer is formed is subjected to surface treatment, the pressure in the chamber is preferably 50 to 600 Torr, and the passage time of the hydrogen source gas may be 0.5 to 3 minutes. When the hydrogen source gas is H ₂ gas, the flow rate of H ₂ may be 10-30 slm; when the hydrogen source gas is a mixed gas of HF and H ₂ , the flow rate of H ₂ may be 10-30 slm, and the flow rate of HF may be It is 50-500 sccm; when the hydrogen source gas is a mixed gas of HCl and H ₂ , the flow rate of H ₂ may be 10-30 slm, and the flow rate of HCl may be 50-500 sccm.

The time for performing the surface treatment in step S203 may be determined according to the actual situation such as the thickness of the sacrificial oxide layer formed on the surface of the substrate. After the surface treatment is completed, the original pollutants on the surface of the substrate, such as carbon, non-uniform oxides, metals, etc., may be used. With the removal of the sacrificial oxide layer, the substrate surface is removed and the substrate surface is made pure, which is suitable for epitaxial growth. Step S204 may continue to perform the epitaxial growth in the chamber, and may generate an undesired gas such as volatiles generated by the reaction in step S203. The chamber is evacuated to facilitate a good quality epitaxial layer.

In step S204, when epitaxial growth is performed, a required gas source may be introduced into the chamber according to actual conditions. For example, performing epitaxial growth may introduce H ₂ , HCl, SiH ₂ Cl ₂ or SiHCl ₃ , SiCl. ₄ , Si ₂ H ₆ , SiH _{4 ,} etc., if doping is required, it is also possible to introduce a desired dopant, which is a technique well known to those skilled in the art, and thus will not be described herein.

As a preferred embodiment of the present invention, in performing the epitaxial growth, infrared rays may be irradiated in the chamber to heat the chamber to a suitable temperature. In the case of infrared irradiation, the infrared wavelength used is preferably 750 nm to 100 μm, the radiation power is 50-150 W/cm ² , and the irradiation time is 0.5-3 min.

After the epitaxial layer is formed in step s204, a protective oxide layer may be further formed on the surface of the epitaxial layer formed to protect the surface of the epitaxial layer formed. Preferably, when the protective oxide layer is formed, an oxygen source gas is introduced into the chamber, and ultraviolet irradiation is performed in the chamber. Oxygen source gas may be introduced into the _{O 2, O 3, N 2} O, NO is one or more; an oxygen source gas into time is preferably 0.5-3min, the flow rate of the oxygen source gas may 50-500sccm, the The pressure in the chamber is preferably from 50 to 600 Torr. When the protective oxide layer is formed by ultraviolet irradiation, the ultraviolet wavelength used is preferably from 10 to 400 nm, the radiation power is preferably from 30 to 200 W/cm ² , and the irradiation time is preferably from 1 msec to 3 min. When the protective oxide layer is formed, the temperature in the chamber can be controlled to be 700 to 800 °C.

The technical solution of the present invention will be described in detail below by way of specific examples.

Embodiment 1

This embodiment provides a method for forming an oxide layer and an epitaxial layer in situ, including the following steps: First, a germanium substrate is placed in the CVD reaction chamber.

Then, an oxygen source gas such as one or more of O ₂ , O ₃ , N ₂ O, NO is introduced into the chamber such that the pressure in the chamber is 50-600 Torr. The oxygen source gas flow rate is 50-500 sccm, and the access time is 0.5-3 min. At the same time, the ultraviolet lamp is irradiated with ultraviolet light having a wavelength of 10-400 nm, the radiation power is 30-200 W/cm ² , and the irradiation time is 1 msec-3 min. The temperature in the chamber is controlled at 700-800 ° C to oxidize the surface of the tantalum substrate to form a sacrificial oxide layer. The resulting sacrificial oxide layer has a thickness of about 2 nm.

Next, the introduction of the oxygen source gas is stopped, and a hydrogen source gas is introduced into the chamber to surface-treat the tantalum substrate on which the sacrificial oxide layer is formed, and the sacrificial oxide layer is reacted with the hydrogen source gas. A volatile matter is generated to obtain a surface-treated ruthenium substrate. In this embodiment, the introduced hydrogen source gas is pure H ₂ , the flow rate is 10-30 slm, the pressure in the chamber is 50-600 Torr, and the introduction time of the hydrogen source gas is 0.5-3 min. The temperature in the chamber was controlled at 700-800 ° C during the reaction. The generated volatiles are discharged into the chamber under the action of the H ₂ gas flow. After the surface treatment, the surface of the crucible substrate becomes pure, which is suitable for subsequent epitaxial growth of germanium.

Subsequently, introducing a gas source required for bismuth epitaxy, such as H ₂ , HCl, SiH ₂ Cl ₂ or SiHCl ₃ , SiCl ₄ , Si ₂ H ₆ , SiH _{4 ,} etc., continues to perform epitaxial growth in the chamber, A tantalum epitaxial layer is formed on the surface-treated germanium substrate. In the epitaxial growth, infrared rays are irradiated in the chamber, and the infrared wavelength is 750 nm-100 μm, the radiation power is 50-150 W/cm ² , and the irradiation time is 0.5-3 min.

Embodiment 2

The embodiment provides a method for forming an oxide layer and an epitaxial layer in situ, and adopts the same technical method as that of the first embodiment, and is different from the first embodiment in that the germanium substrate on which the sacrificial oxide layer is formed is performed. In the surface treatment, irradiation with an ultraviolet lamp in the chamber facilitates sufficient reaction of H ₂ with the sacrificial oxide layer under the effect of ultraviolet radiation. The ultraviolet wavelength used is 10-400 nm, the radiation power is 30-200 W/cm ² , and the irradiation time is 1 msec-3 min.

Embodiment 3

The embodiment provides a method for forming an oxide layer and an epitaxial layer in situ, and adopts substantially the same technical method as that of the second embodiment, and is different from the second embodiment in that the germanium substrate on which the sacrificial oxide layer is formed is performed. In the surface treatment, a mixed gas of HF and H ₂ is used as a hydrogen source gas, a flow rate of H ₂ is 10-30 slm, a flow rate of HF is 50-500 sccm, and an introduction time of the hydrogen source gas is 0.5-3 min. The pressure in the chamber is 50-600 Torr.

The introduction of HF gas for surface treatment can more effectively remove the original pollutants on the substrate, such as carbon, non-uniform oxides, metals and the like.

Embodiment 4

The embodiment provides a method for forming an oxide layer and an epitaxial layer in situ, and adopts substantially the same technical method as that of the third embodiment, and is different from the third embodiment in that the germanium substrate on which the sacrificial oxide layer is formed is performed. In the surface treatment, a mixed gas of HCl and H ₂ is used as a hydrogen source gas, the flow rate of H ₂ is 10-30 slm, the flow rate of HCl is 50-500 sccm, the pressure in the chamber is 50-600 Torr, and the passage time of the hydrogen source gas is 0.5-3min. The introduction of HCl gas for surface treatment can also effectively remove the original pollutants on the substrate, such as carbon, non-uniform oxides, metals and the like.

Embodiment 5

This embodiment provides a method for forming an oxide layer and an epitaxial layer in situ, which is implemented After the epitaxial layer is prepared by any one of the first to fourth embodiments, an oxygen source gas is continuously introduced into the chamber to oxidize the surface of the epitaxial layer to form a protective oxide layer to protect the surface of the epitaxial layer formed. To avoid contamination or damage in subsequent process steps.

The oxygen source gas that is introduced may be one or more of O ₂ , O ₃ , N ₂ O, and NO. When the oxidation reaction is performed, the pressure in the chamber is 50-600 Torr, and the flow rate of the oxygen source gas is 50-500 sccm. It is 0.5-3min. At the same time, an ultraviolet lamp can be used to irradiate ultraviolet rays having a frequency of 10 to 400 nm, the radiation power is 30-200 W/cm ² , and the irradiation time is 1 msec to 3 min. The temperature in the chamber was controlled at 700-800 °C. The resulting protective oxide layer has a thickness of about 1-3 nm.

In summary, the method for forming an oxide layer and an epitaxial layer of the present invention forms a sacrificial oxide layer on the surface of the substrate by UV irradiation, and then surface-treating the substrate having the sacrificial oxide layer by using a hydrogen source gas, thereby obtaining purity. The surface suitable for epitaxial growth can be grown in situ in the same chamber after surface treatment, and the oxide protective layer can continue to be formed after epitaxial growth. The surface pretreatment and epitaxial growth of the present invention can be completed in situ in the same reaction chamber, with high epitaxial efficiency and low production resource consumption. Due to the UV irradiation, the epitaxial surface pretreatment process can use a lower temperature than the conventional high temperature surface treatment, such as 700-800 ° C, to avoid or reduce the wafer warpage caused by high temperature treatment. And other issues. The lower processing temperature allows the present invention to be used in some manufacturing processes that require high temperature processing, such as FinFET, FDSOI, and the like. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

The above-described embodiments are merely illustrative of the principles of the invention and its effects, and are not intended to limit the invention. Modifications or variations of the above-described embodiments may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, it is common in the technical field All equivalent modifications or changes made by the skilled person without departing from the spirit and scope of the invention are intended to be covered by the appended claims.

S201~S204‧‧‧Steps

Claims (22)

A method of forming an oxide layer, comprising the steps of: placing a substrate in a chamber; introducing an oxygen source gas into the chamber, and oxidizing a surface of the substrate to form an oxide layer by ultraviolet irradiation, wherein the forming In the case of the oxide layer, the temperature in the chamber is controlled to be 700-800 °C. The method of forming an oxide layer according to claim 1, wherein the oxygen source gas is one or more of O ₂ , O ₃ , N ₂ O, and NO. The method of forming an oxide layer according to claim 1, wherein when the oxide layer is formed, an oxygen source gas is introduced in a time of 0.5 to 3 minutes, and a flow rate of the oxygen source gas is 50 to 500 sccm. The body pressure is 50-600 Torr. The method of forming an oxide layer according to claim 1, wherein said ultraviolet ray is irradiated with an ultraviolet ray having a wavelength of from 10 to 400 nm, a radiant power of from 30 to 200 W/cm ² and a radiation time of from 1 msec to 3 min. A method of forming an oxide layer and an epitaxial layer, the method comprising the steps of: placing a substrate in a chamber; introducing an oxygen source gas into the chamber, and oxidizing the surface of the substrate by ultraviolet irradiation Sacrificating the oxide layer; stopping introduction of the oxygen source gas, and introducing a hydrogen source gas into the chamber to surface-treat the substrate on which the sacrificial oxide layer is formed, and reacting the sacrificial oxide layer with the hydrogen source gas And a volatile matter is generated to obtain a surface-treated substrate; epitaxial growth is continued in the chamber, and an epitaxial layer is formed on the surface-treated substrate. The method of forming an oxide layer and an epitaxial layer according to claim 5, wherein when the sacrificial oxide layer is formed, the temperature in the chamber is controlled to be 700 to 800 °C. The method of forming an oxide layer and an epitaxial layer according to claim 5, wherein when the sacrificial oxide layer is formed, the oxygen source gas is one or more of O ₂ , O ₃ , N ₂ O, and NO. The method of forming an oxide layer and an epitaxial layer according to claim 5, wherein when the sacrificial oxide layer is formed, the oxygen source gas is introduced in a time of 0.5 - 3 min, and the oxygen source gas has a flow rate of 50 - 500 sccm, the pressure in the chamber is 50-600 Torr. The method of forming an oxide layer and an epitaxial layer according to claim 5, wherein the sacrificial oxide layer is formed by using an ultraviolet wavelength of 10 to 400 nm, a radiation power of 30 to 200 W/cm ² , and a radiation time of 1 msec. 3min. The method of forming an oxide layer and an epitaxial layer according to claim 5, wherein when the hydrogen source gas is introduced to surface-treat the substrate on which the sacrificial oxide layer is formed, the temperature in the chamber is controlled to be 700 to 800 °C. The method of forming an oxide layer and an epitaxial layer according to claim 5, wherein when a substrate for forming the sacrificial oxide layer is subjected to surface treatment by introducing a hydrogen source gas, ultraviolet irradiation is performed in the chamber. The method of forming an oxide layer and an epitaxial layer according to claim 11, wherein the surface of the substrate on which the sacrificial oxide layer is formed is subjected to surface treatment by introducing a hydrogen source gas, and the ultraviolet ray is irradiated with an ultraviolet wavelength of 10 to 400 nm, and the radiation power is It is 30-200 W/cm ² and the irradiation time is 1 msec - 3 min. The method of forming an oxide layer and an epitaxial layer according to claim 5, wherein the hydrogen source gas is H ₂ gas, a mixed gas of HF and H ₂ , or a mixed gas of HCl and H ₂ . The method of forming an oxide layer and an epitaxial layer according to claim 5, wherein the introduction of the hydrogen source gas to the substrate on which the sacrificial oxide layer is formed is performed, and the introduction time of the hydrogen source gas is 0.5 to 3 minutes. The pressure in the chamber is 50-600 Torr. The method of forming an oxide layer and an epitaxial layer according to claim 13, wherein a flow rate of H ₂ is 10-30 slm when the hydrogen source gas is H ₂ gas; and the hydrogen source gas is a mixture of HF and H ₂ In the case of gas, the flow rate of H ₂ is 10-30 slm, and the flow rate of HF is 50-500 sccm; when the hydrogen source gas is a mixed gas of HCl and H ₂ , the flow rate of H ₂ is 10-30 slm, and the flow rate of HCl is 50- 500sccm. The method of forming an oxide layer and an epitaxial layer according to claim 5, wherein when the epitaxial growth is performed, infrared irradiation is performed in the chamber. The method of forming an oxide layer and an epitaxial layer according to claim 15, wherein said infrared ray is irradiated with an infrared wavelength of from 750 nm to 100 μm, a radiation power of from 50 to 150 W/cm ² and a radiation time of from 0.5 to 3 minutes. The method of forming an oxide layer and an epitaxial layer according to claim 5, further comprising forming a protective oxide layer on the surface of the epitaxial layer formed. The method of forming an oxide layer and an epitaxial layer according to claim 18, wherein when the protective oxide layer is formed, an oxygen source gas is introduced into the chamber, and ultraviolet irradiation is performed in the chamber. The method of forming an oxide layer and an epitaxial layer according to claim 19, wherein when the protective oxide layer is formed, the introduced oxygen source gas is one or more of O ₂ , O ₃ , N ₂ O, NO, and oxygen. The source gas has a pass time of 0.5-3 min, a flow rate of the oxygen source gas of 50-500 sccm, and a pressure in the chamber of 50-600 Torr. The method of forming an oxide layer and an epitaxial layer according to claim 19, wherein when the protective oxide layer is formed by ultraviolet irradiation, ultraviolet rays having a wavelength of 10 to 400 nm and a radiation power of 30 to 200 W/cm ^{2 are used} . It is 1msec-3min. The method of forming an oxide layer and an epitaxial layer according to claim 18, wherein when the protective oxide layer is formed, the temperature in the chamber is controlled to be 700 to 800 °C.