TWI607362B - Sensing device and detecting method - Google Patents

Description

Sensing device and detecting method

The invention relates to a sensing device and a detecting method, in particular to a sensing device and a detecting method of a touch panel.

With the development of technology, the technology of panel touch has become more mature. At present, panel touch technology is mainly divided into self-capacitive projected capacitive touch technology and mutual capacitive projected capacitive touch technology. Self-capacitive projected capacitive touch technology charges the electrodes and detects their capacitance values. Since the capacitance value detected by the finger touch is different from the untouched capacitance value, the coordinate information touched by the finger can be known according to the change of the capacitance value. The mutual capacitive projection capacitive touch technology divides the electrodes into two groups, first charging one set of electrodes, and then detecting the capacitance value of the other set of electrodes. Since the capacitance value detected by the finger touch is different from the untouched capacitance value, the coordinate information of the finger touch is obtained according to the relative positional relationship between the two groups of electrodes. However, whether it is self-capacitive projected capacitive touch technology or mutual capacitive projected capacitive touch technology, only the touch position can be detected, but the force of pressing when touched cannot be detected.

The invention provides a sensing device and a detecting method, which can detect coordinate information when touched and the strength of pressing force.

A sensing device according to an embodiment of the invention includes a first substrate, a second substrate, a first electrode group, a second electrode group, and a dielectric layer. The first substrate has a first surface. The second substrate is located above the first substrate. The first electrode group is located on the first surface and includes a plurality of first electrodes and a plurality of second electrodes. The second electrode group is located on the second substrate and above the first electrode group. The second electrode group includes a plurality of third electrodes and a plurality of fourth electrodes. The dielectric layer is between the first electrode group and the second electrode group. During the touch detection period, the first electrode receives the first driving signal, and the second electrode is in the first operating mode. The third electrode receives the second drive signal and the fourth electrode is in the second mode of operation. During the pressure sensing detection period, the first electrode receives the third driving signal and the second electrode is in the second operating mode. The third electrode and the fourth electrode are both in the third mode of operation.

A detection method according to an embodiment of the present invention is suitable for a sensing device. The sensing device includes a first electrode group and a second electrode group. The first electrode group includes a plurality of first electrodes and a plurality of second electrodes. The second electrode group includes a plurality of third electrodes and a plurality of fourth electrodes. The detecting method is included in the touch detection period, providing a first driving signal to the first electrode and placing the second electrode in the first operating mode. During the touch detection period, the second driving signal is supplied to the third electrode and the fourth electrode is in the second operation mode. During the pressure sensing detection period, a third driving signal is provided to the first electrode and the second electrode is in the second operating mode. During the pressure sensing period, the third electrode and the fourth electrode are in the third mode of operation.

In summary, the sensing device and the detecting method provided by the present invention provide different operating modes in the sensing detection period and the touch detection period, respectively, in a mutual capacitive detection manner. The sensing device can simultaneously detect the coordinate information at the time of the touch and the strength of the pressing force.

The above description of the disclosure and the following description of the embodiments of the present invention are intended to illustrate and explain the spirit and principles of the invention, and to provide further explanation of the scope of the invention.

The detailed features and advantages of the present invention are set forth in the Detailed Description of the Detailed Description of the <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> <RTIgt; The objects and advantages associated with the present invention can be readily understood by those skilled in the art. The following examples are intended to describe the present invention in further detail, but are not intended to limit the scope of the invention.

Please refer to Table 1 first. From the data shown in Table 1, it can be known that the capacitance change detected by the self-capacitance sensing method and the mutual capacitance sensing method is 2.31% and 3.24%, respectively. Compared with the self-capacitance sensing method, as shown in Table 1, the change detected by the mutual capacitive sensing method is higher than the self-capacitive sensing method, that is, the mutual capacitance is adopted. The sensing effect obtained by the sensing method is more obvious. The sensing method adopted by the sensing device of the present invention is exemplified by a mutual capacitive sensing method. Table I         <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> Capacitance (pF) </td><td> Self-contained</td><td> Mutual capacity </td></tr><tr><td> touch detection</td><td> 172.7 </td><td> 90.4 </td></tr><tr><td > Pressure Sensing Detection</td><td> 176.7 </td><td> 93.3 </td></tr><tr><td> Capacitance Change</td><td> 2.31% </td ><td> 3.24% </td></tr></TBODY></TABLE>

Please refer to FIG. 1A, FIG. 1B and FIG. 1C together. FIG. 1A is a schematic diagram of a sensing device according to an embodiment of the invention. 1B and FIG. 1C are top plan views of a second electrode group and a first electrode group, respectively, according to an embodiment of the invention. As shown in FIG. 1A, the sensing device 1 includes a first substrate 10, a second substrate 11, a first electrode group 101, a second electrode group 111, and a dielectric layer 12. As shown in FIG. 1B and FIG. 1C, the first electrode group 101 includes a plurality of first electrodes 101a-101c and a plurality of second electrodes 101d-101e, and the second electrode group 111 includes a plurality of third electrodes 111a-111c and a plurality of Fourth electrodes 111d to 111e. The first electrodes 101a-101c are exemplified in order, the second electrodes 101d-101e are arranged in order, the third electrodes 111a-111c are sequentially arranged, and the fourth electrodes 111d-111e are sequentially illustrated. arrangement. In this embodiment, as shown in FIG. 1B and FIG. 1C, the first electrode 101a is electrically connected through the first electrode connection portion 101a_1. The first electrode 101b is electrically connected by the first electrode connection portion 101b_1, and the first electrode 101c is electrically connected by the first electrode connection portion 101c_1. The second electrode 101d is electrically connected by the second electrode connecting portion 101d_1, and the second electrode 101e is electrically connected by the second electrode connecting portion 101e_1. The third electrode 111a is electrically connected through the third electrode connecting portion 111a_1, the third electrode 111b is electrically connected through the third electrode connecting portion 111b_1, and the third electrode 111c is electrically connected through the third electrode connecting portion 111c_1. The fourth electrode 111d is electrically connected by the fourth electrode connecting portion 111d_1, and the fourth electrode 111e is electrically connected by the fourth electrode connecting portion 111e_1.

In one embodiment, the plurality of first electrode connecting portions 101a_1 to 101c_1, the plurality of first electrodes 101a to 101c, and the plurality of second electrodes 101d to 101e are both located in the same layer of the sensing device 1, and a plurality of second The electrode connection portions 101d_1 to 101e_ are located in different layers. In another embodiment, the plurality of second electrode connecting portions 101d_1 to 101e_1, the plurality of first electrodes 101a to 101c, and the plurality of second electrodes 101d to 101e are located in the same layer of the sensing device 1, and the plurality of One of the electrode connection portions 101a_1 to 101c_1 is located at a different layer. The second electrode group 111 has a similar structure to the first electrode group 101 and will not be described again. Please refer to FIG. 1D and FIG. 2 together. FIG. 1D is a schematic top view of a sensing device according to an embodiment of the invention. 2 is a cross-sectional view showing the structure of a sensing device according to an embodiment of the present invention, which corresponds to a section line AA' of FIG. 1D.

As shown in FIG. 2, the first substrate 10 has a first surface E1. The second substrate 11 is disposed opposite to the first substrate 10. The first electrode group 101 is located on the first surface E1, and the second electrode group 111 is located on the second substrate 11 and above the first electrode group 101. In one embodiment, the plurality of first electrodes 101a-101c, the plurality of second electrodes 101d-101e, the plurality of third electrodes 111a-111c, and the plurality of fourth electrodes 111d-111e are made of conductive glass (FTO) A transparent conductive film such as an antimony tin oxide film (ATO) or indium tin oxide (ITO) for receiving a driving signal from the sensing circuit. In an embodiment, the positive projection of the plurality of third electrodes 111a-111c on the first surface E1 is not overlapped by the second electrodes 101d-101e, and the plurality of fourth electrodes 111d-111e are positive on the first surface E1. The projection example does not overlap the plurality of first electrodes 101a to 101c. For example, as shown in FIG. 2, the orthographic projection of the third electrode 111a on the first surface E1 does not overlap the second electrode 101d. The orthographic projection of the fourth electrode 111d on the first surface E1 does not overlap the first electrode 101a and the first electrode 101b.

The dielectric layer 12 is located between the first electrode group 101 and the second electrode group 111 for isolating the first electrode group 101 and the second electrode group 111. In one example, the higher the dielectric constant of the dielectric layer 12, the more desirable. In one embodiment, the dielectric layer 12 is air. In another embodiment, when the dielectric layer 12 of the sensing device 1 is a multi-layer dielectric layer, each dielectric layer has a dielectric constant of 1 or more and 8 or less. In the embodiment of FIG. 2, the second substrate 11 has a second surface E2 facing the first surface E1. The second electrode group 111 is located on the second surface E2. Referring to FIG. 2 and FIG. 3 together, FIG. 3 is a timing waveform diagram according to an embodiment of the present invention. As shown in FIG. 3, in the touch detection period Tt, the plurality of first electrodes 101a-101c of the sensing device 1 sequentially receive the first driving signal S1, respectively. For convenience of description, FIG. 3 only shows the first electrode. 101a~101b. In practice, when the plurality of first electrodes 101a-101c receive the first driving signal S1 from the sensing circuit (not shown), the plurality of first electrodes 101a-101c are charged.

During the touch detection period Tt, the plurality of second electrodes 101d to 101e are in the first operation mode. In one embodiment, the first mode of operation floats the plurality of second electrodes 101d-101e. Referring to FIG. 4 together, FIG. 4 is a circuit diagram of a portion of a sensing device according to an embodiment of the invention. In the example of FIG. 4, the second electrode 101d is connected to the sensing circuit SC through the switching unit SW. The floating connection refers to a state in which the switch unit SW is not turned on. Likewise, the second electrode 101e is also connected to the sensing circuit SC through the switching unit SW. That is to say, in the floating state, the plurality of second electrodes 101d to 101e are connected to the sensing circuit, but substantially the plurality of second electrodes 101d to 101e and the sensing circuit are in an open state. In another embodiment, the first mode of operation includes a reset phase Tr and a sensing phase Ts, and the reset phase and the sensing phase are closely linked, as shown in FIG. In the reset phase Tr, the plurality of second electrodes 101d-101e are reset back to a predetermined potential, and in the next sensing phase Ts, between the plurality of second electrodes 101d-101e and the sensing circuit SC The switching unit SW is turned on, and the potential of the plurality of second electrodes 101d to 101e is detected by the sensing circuit SC.

During the touch detection period Tt, the plurality of third electrodes 111a-111c sequentially receive the second driving signal S2, respectively. For convenience of description, FIG. 3 only shows the second electrodes 111a-111b. In practice, when the plurality of third electrodes 111a-111c receive the second driving signal S2 from the sensing circuit SC, the plurality of third electrodes 111a-111c are charged. In one embodiment, the plurality of first electrodes 101a-101c and the plurality of third electrodes 111a-111c are charged to the same potential. At this time, there is no potential difference between the first electrode and the third electrode corresponding to the upper and lower sides in FIG. . For example, there is no potential difference between the first electrode 101a and the third electrode 111a corresponding to the upper and lower sides. The plurality of fourth electrodes 111d to 111e are in the second operation mode. In an embodiment, the second operation mode is the same as the first operation mode, and includes a reset phase Tr and a sensing phase Ts, and the reset phase Tr and the sensing phase Ts are closely connected. Similarly, in the reset phase Tr, the plurality of fourth electrodes 111d-111e are reset back to a predetermined potential, and in the following sensing phase Ts, the plurality of fourth electrodes 111d-111e and the sensing circuit The switching unit SW between the SCs is turned on, and the sensing circuit SC detects the potentials of the plurality of fourth electrodes 111d to 111e.

During the touch detection period Tt, the sensing device 1 uses the mutual capacitive sensing to obtain the coordinate information touched by the finger. For a practical example, please refer to FIG. 5. FIG. 5 is an equivalent circuit diagram of a structure of a portion of a sensing device according to an embodiment of the invention. As shown in FIG. 5, a capacitance CmA is provided between the first electrode 101a and the second electrode 101d, a capacitance Cf2t is provided between the first electrode 101a and the third electrode 111a, and a capacitance Cf2r is provided between the second electrode 101d and the fourth electrode 111d. There is a capacitance CmB between the third electrode 111a and the fourth electrode 111d. During the touch detection period, the first electrode 101a and the third electrode 111a respectively receive the first driving signal and the second driving signal to start charging to a potential. At this time, there is no potential difference between the first electrode 101a and the third electrode 111a. The second electrode 101d and the fourth electrode 111d are respectively in the first operation mode and the second operation mode. In this example, the first operation mode and the second operation mode both include the reset phase Tr and the sensing phase Ts, and there is substantially no potential difference between the second electrode 101d and the fourth electrode 111d. That is to say, during the touch detection period, the capacitance Cf2t and the capacitance Cf2r are substantially zero.

Referring to FIG. 2, FIG. 3, FIG. 5 and FIG. 6, FIG. 6 is an equivalent circuit diagram of a structure of a partial sensing device according to another embodiment of the present invention. In FIG. 5, a capacitance CmA is generated between the first electrode 101a and the second electrode 101d, a capacitance CmB is generated between the third electrode 111a and the fourth electrode 111d, and a capacitance Cf2t is generated between the first electrode 101a and the third electrode 111a. A capacitance Cf2r is generated between the second electrode 101d and the fourth electrode 111d, a capacitance Cf1 is generated between the third electrode 111a and the finger (ground), and a capacitance Cf1r is generated between the fourth electrode 111d and the finger (ground). For example, the capacitance CmA generated between the first electrode 101a and the second electrode 101d and the capacitance CmB generated between the third electrode 111a and the fourth electrode 111d are due to the first electrode 101a and the third electrode. The distance 111a is much larger than the distance between the first electrode 101a and the second electrode 101d, so the capacitance Cf2t generated between the first electrode 101a and the third electrode 111a and the second electrode 101d and the fourth electrode 111d are generated. When the capacitance Cf2r is regarded as substantially zero, the equivalent circuit diagram of FIG. 5 can be simplified to the equivalent circuit diagram of FIG. Specifically, during the touch detection period Tt, the third electrode 111a is charged, and a capacitance CmB is generated between the third electrode 111a and the fourth electrode 111d. When the finger (the grounding end of FIG. 5 and FIG. 6) is touched, in the sensing phase Ts of the second operation mode, the sensing circuit turns on the switching unit, thereby detecting the third electrode 111a and the fourth electrode 111d. The capacitance CmB generated between the two changes, and the coordinate information touched by the finger can be known. In this example, since the capacitance Cf2t and the capacitance Cf2r are substantially zero, the capacitance CmA generated between the first electrode 101a and the second electrode 101d is not detected.

Please return to Figure 3. As shown in FIG. 3, in the sensing detection period Tf, the plurality of first electrodes 101a-101c receive the third driving signal S3, the second electrodes 101d-101e are in the second operation mode, and the plurality of third electrodes 111a-111c The plurality of fourth electrodes 111d-111e are in the third mode of operation. For convenience of description, FIG. 3 only shows the first electrodes 101a-101b and the second electrodes 111a-111b. In this embodiment, when the plurality of first electrodes 101a to 101c receive the third driving signal S3, they are all charged to one potential. The second operation mode includes a reset phase Tr and a sensing phase Ts, and the operation mode of the reset phase Tr and the sensing phase Ts is the same as the foregoing, and will not be further described herein. In the third mode of operation, the plurality of third electrodes 111a-111c and the plurality of fourth electrodes 111d-111e receive a fixed reference voltage (eg, a DC voltage). In another embodiment, the reference voltage is exemplified by a ground voltage of the sensing device 1. The purpose of causing the plurality of third electrodes 111a 111 111c and the plurality of fourth electrodes 111d 111 111 to receive a fixed reference voltage or a ground voltage is to shield the signal generated when the finger is touched, so that the sensing device 1 can be more accurately Sensing the force of the finger down. In another embodiment, the plurality of third electrodes 111a-111c and the plurality of fourth electrodes 111d-111e are floating.

During the sensing period Tf, the sensing device 1 can calculate the pressure channel under the finger of the sensing device 1 by the value of the capacitance change caused by the thickness variation of the dielectric layer 12. For a practical example, please refer to FIG. 2, FIG. 3, FIG. 5 and FIG. 7. FIG. 7 is an equivalent circuit diagram of a structure of a partial sensing device according to another embodiment of the present invention. In the pressure sensing detection period, since the third electrode 111a and the fourth electrode 111d receive a ground voltage as an example, and the finger is regarded as a ground voltage, the equivalent circuit diagram of FIG. 7 can be simplified. As shown in FIG. 7, when a finger touches the outer surface of the second substrate 11 with respect to the outer surface of the second surface E2, the dielectric material contained in the dielectric layer 12 is compressed, resulting in the dielectric layer 12. The thickness direction is deformed such that the distance between the finger and the first electrode 101a and the distance between the finger and the second electrode 101d are reduced. At this time, the capacitance Cf2t and the capacitance Cf2r are changed to the capacitance Cf2t' and the capacitance Cf2r', respectively. Therefore, the capacitance CmA is also changed to CmA'. At this time, by the amount of variation between CmA' and CmA, the magnitude of the pressure channel under the finger can be further estimated. In one embodiment, the touch detection period Tt and the pressure detection period Tf are closely connected. In other words, when one touch detection period Tt ends, one pressure detection period Tf will continue, and when the aforementioned pressure detection period Tf ends, another touch detection period Tt will continue. Thereafter, the above operational timing is repeated repeatedly.

Please refer to FIG. 8. FIG. 8 is a cross-sectional view showing the structure of a sensing device according to another embodiment of the present invention. In this embodiment, the second substrate 11 of the sensing device 1 has a third surface E3 opposite to the second surface E2, and the second electrode group 111, in addition to the second surface E2 facing the first substrate 10. Located on the third surface E3. In this embodiment, the dielectric layer 12 between the first substrate 10 and the second substrate 11 is exemplified by a liquid crystal material. In the pressure sensing detection period Tf, the degree of compression of the liquid crystal material is used to detect the under the finger. The strength of the pressure. Please refer to FIG. 9. FIG. 9 is a cross-sectional view showing the structure of a sensing device according to another embodiment of the present invention. In this embodiment, the sensing device 1 further includes a third substrate 14 and a liquid crystal layer 13 . The liquid crystal layer 13 is interposed between the third substrate 14 and the first substrate 10. In another embodiment, please refer to FIG. 10. FIG. 10 is a cross-sectional view showing the structure of a sensing device according to another embodiment of the present invention. 10 is different from the embodiment of FIG. 9 in that the second electrode group 111 of FIG. 10 is located on the third surface E3 of the second substrate 11, and the second substrate 11 is located in the second electrode group 111 and the first electrode group 101. between.

Please refer to FIG. 3 and FIG. 11 together. FIG. 11 is a flowchart of a method for detecting a method according to an embodiment of the present invention. This detection method is suitable for the sensing device 1 of FIG. As shown in FIG. 11, in step S301, in the touch detection period Tt, the first driving signal is provided by the sensing circuit to the plurality of first electrodes 101a-101c, and the plurality of second electrodes 101d-101e are in the first A mode of operation. In step S303, in the touch detection period Tt, the second drive signal is supplied from the sensing circuit to the plurality of third electrodes 111a-111c, and the plurality of fourth electrodes 111d-111e are in the second operation mode. In step S305, in the sensing detection period Tf, the third drive signal is supplied from the sensing circuit to the plurality of first electrodes 101a-101c, and the plurality of second electrodes 101d-101e are in the second operation mode. In step S307, in the sensing detection period Tf, the sensing circuit causes the plurality of third electrodes 111a-111c and the plurality of fourth electrodes 111d-111e to be in the third operation mode. In FIG. 11, although the order of steps S301 to S307 is indicated by an arrow, but not limited thereto, step S303 may precede or simultaneously with step S301, and step S307 may precede or simultaneously with step S305, and sense pressure detection. The measurement period Tf may precede the touch detection period Tt, but is not limited thereto. Those skilled in the art can adjust the order of the respective steps S301 to S307 according to the requirements according to the spirit of the embodiment.

In one embodiment, the first mode of operation includes floating a plurality of second electrodes 101d-101e. In another embodiment, the first operational mode includes a reset phase Tr and a sensing phase Ts, and the reset phase Tr and the sensing phase Ts are closely connected. The specific operation modes of the floating connection, the reset stage Tr segment, and the sensing phase Ts have been described in the foregoing paragraphs, and thus will not be described again. In an embodiment, the second mode of operation and the first mode of operation both include a reset phase Tr and a sensing phase Ts. In one embodiment, the third mode of operation includes floating the plurality of third electrodes 111a-111c and the plurality of fourth electrodes 111d-111e. In another embodiment, in the third mode of operation, the plurality of third electrodes 111a-111c and the fourth electrodes 111d-111e each receive a reference voltage or a ground voltage. In one example, the reference voltage is from 0 volts to 30 volts, preferably 3.3 volts, 5 volts, or 12 volts.

In summary, the sensing device and the detecting method of the present invention can detect the finger touch when the touch is detected by the different sensing modes in the sensing period and the touch detecting period. The amount of capacitance change is used to obtain the coordinate information of the touch, and the amount of capacitance variation caused by the pressing of the dielectric layer is used to estimate the magnitude of the force of the finger press.

Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. It is within the scope of the invention to be modified and modified without departing from the spirit and scope of the invention. Please refer to the attached patent application for the scope of protection defined by the present invention.

1‧‧‧Sensing device

10‧‧‧First substrate

11‧‧‧second substrate

12‧‧‧Dielectric layer

13‧‧‧Liquid layer

14‧‧‧ Third substrate

101‧‧‧First electrode group

111‧‧‧Second electrode group

101a~101c‧‧‧first electrode

101d~101e‧‧‧second electrode

111a~111c‧‧‧ third electrode

111d~111e‧‧‧fourth electrode

101a_1~101c_1‧‧‧First electrode connection

101d_1~101e_1‧‧‧Second electrode connection

111a_1~111c_1‧‧‧third electrode connection

111d_1~111e_1‧‧‧fourth electrode connection

AA’‧‧‧ hatching

E1‧‧‧ first surface

E2‧‧‧ second surface

E3‧‧‧ third surface

S1‧‧‧First drive signal

S2‧‧‧second drive signal

S3‧‧‧ third drive signal

SC‧‧‧Sensor circuit

SW‧‧‧Switch unit

Tr‧‧‧Reset phase

Ts‧‧‧Sensing phase

Cf1, Cf1r, Cf2t, Cf2t', Cf2r, Cf2r', CmA, CmA', CmB‧‧‧ capacitor

FIG. 1A is a schematic diagram of a sensing device according to an embodiment of the invention. FIG. 1B is a top plan view of a second electrode group according to an embodiment of the invention. FIG. 1C is a top plan view of a first electrode group according to an embodiment of the invention. FIG. 1D is a schematic top view of a sensing device according to an embodiment of the invention. 2 is a cross-sectional view showing the structure of a sensing device according to an embodiment of the present invention. FIG. 3 is a timing waveform diagram according to an embodiment of the invention. 4 is a circuit diagram of a portion of a sensing device in accordance with an embodiment of the present invention. FIG. 5 is an equivalent circuit diagram of a structure of a portion of a sensing device according to an embodiment of the invention. FIG. 6 is an equivalent circuit diagram of a structure of a portion of a sensing device according to another embodiment of the present invention. FIG. 7 is an equivalent circuit diagram of a structure of a portion of a sensing device according to another embodiment of the present invention. FIG. 8 is a cross-sectional view showing the structure of a sensing device according to another embodiment of the present invention. 9 is a cross-sectional view showing the structure of a sensing device according to another embodiment of the present invention. FIG. 10 is a cross-sectional view showing the structure of a sensing device according to another embodiment of the present invention. FIG. 11 is a flowchart of a method for detecting a method according to an embodiment of the invention.

1‧‧‧Sensing device

10‧‧‧First substrate

11‧‧‧second substrate

101‧‧‧First electrode group

111‧‧‧Second electrode group

12‧‧‧Dielectric layer

AA’‧‧‧ hatching

E1‧‧‧ first surface

E2‧‧‧ second surface

101a~101c‧‧‧first electrode

101d~101e‧‧‧second electrode

111a~111c‧‧‧ third electrode

111d~111e‧‧‧fourth electrode

Claims (10)

A sensing device includes: a first substrate having a first surface; a second substrate disposed above the first substrate; a first electrode group located on the first surface, comprising: a plurality of first electrodes and a plurality of second electrodes; a second electrode group, located on the second substrate and above the first electrode group, comprising: a plurality of third electrodes and a plurality of fourth electrodes; and at least one dielectric layer located at the Between an electrode group and the second electrode group, wherein the first electrodes receive a first driving signal during a touch detection period, and the second electrodes are in a first operation mode, and the third The electrode receives a second driving signal, and the fourth electrodes are in a second operation mode. During a sensing detection period, the first electrodes receive a third driving signal, and the second electrodes are in the second operation. a mode, the first mode of operation and the second mode of operation each comprise a reset phase and a sensing phase, wherein the reset phase is configured to reset the second electrodes and/or the fourth electrodes to a pre-stage Setting a potential, the sensing phase is for making the second electricity The potentials of the poles and/or the fourth electrodes are detected. The sensing device of claim 1, wherein the orthographic projections of the third electrodes on the first surface do not overlap the second electrodes, and the orthographic projections of the fourth electrodes on the first surface do not overlap. On the first electrodes. The sensing device of claim 1, wherein the third electrode and the fourth electrodes are both in a third mode of operation during the sensing period, and in the third mode of operation, the The three electrodes and the fourth electrodes each receive a reference voltage or a ground voltage. The sensing device of claim 1, wherein the touch detection period and the pressure detection period are closely connected. The sensing device of claim 1, wherein the second substrate has a second surface facing the first surface, and the second electrode group is located on the second surface. The sensing device of claim 1, further comprising: a third substrate; and a liquid crystal layer between the third substrate and the first substrate. The sensing device of claim 1, wherein the at least one dielectric layer is a multilayer dielectric layer, and each of the dielectric layers has a dielectric constant of 1 or more and 8 or less. A detecting method is suitable for a sensing device, the sensing device includes a first electrode group and a second electrode group, the first electrode group includes a plurality of first electrodes and a plurality of second electrodes, the second The electrode group includes a plurality of third electrodes and a plurality of fourth electrodes, and the detecting method includes: providing a first driving signal to the first electrodes in a touch detection period, and causing the second electrodes The electrode is in a first mode of operation; in the touch detection period, a second driving signal is provided to the third electrodes, and the fourth electrodes are in a second mode of operation; Providing a third driving signal to the first electrodes and the second electrodes in the second mode of operation; wherein the first mode of operation and the second mode of operation both comprise a reset phase a sensing phase for resetting the second electrodes and/or the fourth electrodes to a predetermined potential, the sensing phase for causing the second electrodes and/or the The potential of the fourth electrode is detected. The detecting method of claim 8, wherein the third electrodes and the fourth electrodes are in a third mode of operation during the sensing period, and in the third mode of operation, The third electrode and the fourth electrodes each receive a reference voltage or a ground voltage. The detection method of claim 8, wherein the touch detection period and the pressure detection period are closely connected.