TWI606141B - Electroless copper plating bath and electroless copper plating method for increasing copper plating flatness - Google Patents

Electroless copper plating bath and electroless copper plating method for increasing copper plating flatness Download PDF

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TWI606141B
TWI606141B TW105138387A TW105138387A TWI606141B TW I606141 B TWI606141 B TW I606141B TW 105138387 A TW105138387 A TW 105138387A TW 105138387 A TW105138387 A TW 105138387A TW I606141 B TWI606141 B TW I606141B
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copper plating
leveling agent
electroless copper
plating solution
concentration
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TW201723224A (en
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Ming-Guo Wei
Yan-Jin Lin
Chun-Ru Lin
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/38Coating with copper
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating

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Description

無電鍍銅鍍液及增加銅鍍層平整性的無電鍍銅方法Electroless copper plating bath and electroless copper plating method for increasing the flatness of copper plating

本發明是有關於一種銅鍍液及鍍銅方法,特別是指一種無電鍍銅鍍液及無電鍍銅方法。The invention relates to a copper plating solution and a copper plating method, in particular to an electroless copper plating solution and an electroless copper plating method.

無電鍍(electroless plating),又稱化學鍍(chemical plating)或自催化電鍍(auto-catalytic plating),其是在高分子的物體表面,以化學氧化還原之方式,形成一層厚度約在0.2至2微米的連續金屬層,使非導體的物體表面能被導通,以利後續電鍍的作業。此種鍍銅方式,具有鍍層均勻、鍍層孔率低、操作簡單、可鍍在非導體上…等優點,常在塑膠上進行,又或者用於印刷電路板(PCB)之穿孔鍍層,以及MID(Molded Interconnect Device)製程。Electroless plating, also known as chemical plating or auto-catalytic plating, is formed on the surface of a polymer object by chemical redox to form a layer having a thickness of about 0.2 to 2. The micron continuous metal layer enables the surface of the non-conductor object to be turned on for subsequent electroplating operations. The copper plating method has the advantages of uniform plating, low plating porosity, simple operation, plating on non-conductors, etc., and is often performed on plastic, or used for perforated plating of printed circuit boards (PCB), and MID. (Molded Interconnect Device) process.

所謂的MID製程,是透過雷射雕刻技術在非導電基材上雕刻出3D立體線路,之後,再以無電鍍銅的方式,在前述所雕刻出的內凹線路中直接鍍出超過8微米厚的銅鍍層(通常為12微米),接著再披覆上一層薄的金層、銀層或銅保護劑,以防止銅鍍層氧化。MID製程已廣泛用於智慧型手機、IPad或傳輸元件中的天線製造,主要能提供足夠之電通量以利訊號之傳輸。然而,手機訊號之傳輸由原先之2G、3G,演進至現今的4G,天線在精準度上的要求越來越嚴苛,其中對訊號影響頗深者,即為鍍層之粗糙度,原因在於高頻信號是行走在導電體的表面,當表面愈粗糙,又或具有突點時,將會產生雜訊,導致通訊品質變差。為了達到低雜訊的要求,Ra值需要低於0.35。The so-called MID process is to engrave a 3D three-dimensional line on a non-conductive substrate by laser engraving technology, and then directly plate the above-mentioned engraved recessed line to a thickness of more than 8 μm by electroless copper plating. The copper plating (usually 12 microns) is then coated with a thin layer of gold, silver or copper to prevent oxidation of the copper coating. The MID process has been widely used in the manufacture of antennas in smart phones, IPads or transmission components, and is primarily capable of providing sufficient electrical flux for signal transmission. However, the transmission of mobile phone signals has evolved from the original 2G and 3G to the current 4G. The accuracy of the antenna is becoming more and more stringent. The influence on the signal is the roughness of the coating. The frequency signal is walking on the surface of the conductor. When the surface is rougher or has a bump, noise will be generated, resulting in poor communication quality. In order to achieve low noise requirements, the Ra value needs to be less than 0.35.

傳統的無電鍍銅鍍層厚度不會超過3微米,且對於平整性通常沒有過多的要求。然而,為了符合天線的需求,勢必要在MID製程中以無電鍍法製造高厚度的銅層,但傳統無電鍍銅鍍液常有表面粗糙度過大(Ra值大於0.6)的問題,無法滿足此一要求。再者,透過已發表有關無電鍍銅之相關技術文獻,多著重在於鍍層的光澤性,而非平整性。但鍍層的光澤性是指鍍層結晶在微觀上的光澤,平整性是指表面的粗糙度,二者的定義略有不同,因此依據現有的技術文獻,依然無法獲知何以無電鍍銅鍍的方式,製作出在厚度超過8微米後仍能具有高平整度的鍍層。Conventional electroless copper plating does not exceed 3 microns in thickness and there is usually no excessive requirement for flatness. However, in order to meet the requirements of the antenna, it is necessary to manufacture a high-thickness copper layer by electroless plating in the MID process, but the conventional electroless copper plating solution often has a problem of excessive surface roughness (Ra value greater than 0.6), which cannot be satisfied. A request. Furthermore, through the published technical literature on electroless copper, the focus is on the gloss of the coating, not the flatness. However, the gloss of the coating refers to the microscopic gloss of the coating crystal, and the flatness refers to the roughness of the surface. The definitions of the two are slightly different. Therefore, according to the existing technical literature, it is still impossible to know how to electroless copper plating. A coating having a high flatness after a thickness exceeding 8 μm was produced.

因此,本發明之目的,即在提供一種無電鍍銅鍍液,其能使化學鍍銅層厚度在高厚度時具有較高的平整性。Accordingly, it is an object of the present invention to provide an electroless copper plating bath which enables a high degree of flatness in the thickness of the electroless copper plating layer at a high thickness.

於是,本發明無電鍍銅鍍液,含有溶劑、銅離子、錯合劑、還原劑,及整平劑組分。其中,整平劑組分含有第一整平劑。該第一整平劑選自聚亞胺、咪唑系季銨鹽材料或其等的組合。Thus, the electroless copper plating bath of the present invention contains a solvent, a copper ion, a binder, a reducing agent, and a leveling agent component. Wherein the leveler component contains a first leveling agent. The first leveling agent is selected from the group consisting of polyimine, imidazole quaternary ammonium salt materials, or the like.

銅離子係源自水溶性銅鹽。前述水溶性銅鹽選自硫酸銅、氯化銅、硝酸銅、甲基磺酸銅,或上述任意的組合。The copper ion is derived from a water-soluble copper salt. The water-soluble copper salt is selected from the group consisting of copper sulfate, copper chloride, copper nitrate, copper methanesulfonate, or any combination thereof.

較佳地,該聚亞胺的數目平均分子量範圍為100至3000。該聚亞胺例如但不限於聚乙烯亞胺(即:polyethylenimine)。該咪唑系季銨鹽材料例如但不限於咪唑系季銨鹽化合物或咪唑系季銨鹽聚合物。該咪唑系季銨鹽化合物例如但不限於由包含咪唑系化合物與季銨化劑的組分進行季銨化(quaterisation)反應所形成的水溶性產物。該咪唑系季銨鹽聚合物例如但不限於由該咪唑系季銨鹽化合物經聚合反應所形成的產物。該咪唑系季銨鹽聚合物例如但不限於咪唑/環氧氯丙烷共聚物(即:imidazole/epichlorohydrin copolymer)。該咪唑系化合物可單一使用或混合多種使用,且該咪唑系化合物例如但不限於咪唑(imidazole)、1-甲基咪唑(1-methylimidazole)、1-乙基咪唑(1-ethylimidazole)、2-甲基咪唑(2-methylimidazole)、1,5-二甲基咪唑(1,5-dimethylimidazole)、1-乙基-2甲基咪唑 (1-ethyl-2-methylimidazole)、1-甲氧基咪唑(1-oxymethylimidazole),或 1-乙烯基咪唑(1-vinyl imidazole)等。該季銨化劑可單一使用或混合多種使用,且該季銨化劑例如但不限於環氧氯丙烷(epichlorohydrin)、一氯乙酸(monochloroacetic acid)、氯化苄(benzyl chloride)、氯乙醯胺(chloroacetoamide)、 3-胺基苯甲醯氯(3-aminobenzyl chloride)、二氯甘油(dichloroglycerine)、碘甲烷 (methyl iodide)、烯丙基氯(allyl chloride)、二氯乙烷(dichloroethane),或單氯丙烷(monochloropropane)等。以該咪唑系化合物的用量為1莫耳計,該季銨化劑的用量範圍為1莫耳至1.5莫耳。該季銨化反應的操作溫度範圍為40℃至100℃。該季銨化反應的操作時間範圍為0.5至4小時。較佳地,該第一整平劑的聚亞胺為聚乙烯亞胺,咪唑系季銨鹽材料為咪唑/環氧氯丙烷共聚物。Preferably, the polyimine has a number average molecular weight ranging from 100 to 3,000. The polyimine is for example but not limited to polyethyleneimine (ie polyethylenimine). The imidazole-based quaternary ammonium salt material is, for example but not limited to, an imidazole-based quaternary ammonium salt compound or an imidazole-based quaternary ammonium salt polymer. The imidazole-based quaternary ammonium salt compound is, for example but not limited to, a water-soluble product formed by a quaterisation reaction of a component comprising an imidazole-based compound and a quaternizing agent. The imidazole-based quaternary ammonium salt polymer is, for example but not limited to, a product formed by polymerization of the imidazole-based quaternary ammonium salt compound. The imidazole-based quaternary ammonium salt polymer is, for example but not limited to, an imidazole/epichlorohydrin copolymer (i.e., imidazole/epichlorohydrin copolymer). The imidazole compound may be used singly or in combination, and the imidazole compound is, for example but not limited to, imidazole, 1-methylimidazole, 1-ethylimidazole, 2- 2-methylimidazole, 1,5-dimethylimidazole, 1-ethyl-2-methylimidazole, 1-methoxyimidazole (1-oxymethylimidazole), or 1-vinyl imidazole (1-vinyl imidazole). The quaternizing agent may be used singly or in combination, and the quaternizing agent is, for example but not limited to, epichlorohydrin, monochloroacetic acid, benzyl chloride, chloroacetic acid. Chloroacetoamide, 3-aminobenzyl chloride, dichloroglycerine, methyl iodide, allyl chloride, dichloroethane , or monochloropropane, etc. The quaternizing agent is used in an amount ranging from 1 mole to 1.5 moles, based on the amount of the imidazole compound. The quaternization reaction has an operating temperature in the range of from 40 °C to 100 °C. The quaternization reaction has an operating time ranging from 0.5 to 4 hours. Preferably, the first leveling agent polyimine is polyethyleneimine, and the imidazole quaternary ammonium salt material is an imidazole/epichlorohydrin copolymer.

較佳地,該第一整平劑的分子量為介於100至3000。更佳的,該第一整平劑的分子量為介於200至2000。又更佳地,該第一整平劑的分子量為介於150至1500。Preferably, the first leveling agent has a molecular weight of from 100 to 3,000. More preferably, the first leveling agent has a molecular weight of from 200 to 2,000. Still more preferably, the first leveling agent has a molecular weight of from 150 to 1500.

為使鍍層具有更佳的平整性且形成鍍層的成長速率更快。因此較佳地,該第一整平劑的濃度為0.01至0.8g/L(即:10至800ppm)。更佳地該第一整平劑的濃度為0.02至0.3g/L(即:20至300ppm)。In order to make the plating layer have better flatness and the formation of the plating layer is faster. Therefore, preferably, the concentration of the first leveling agent is from 0.01 to 0.8 g/L (i.e., from 10 to 800 ppm). More preferably, the concentration of the first leveling agent is 0.02 to 0.3 g/L (i.e., 20 to 300 ppm).

當第一整平劑為聚亞胺時,其濃度較佳地為0.01至0.2g/L(即:10至200ppm),最佳為0.02至0.15g/L(即:20至150ppm)。當第一整平劑為咪唑系季銨鹽材料時,其濃度較佳地為0.02至0.8g/L(即:20至800ppm),最佳為0.05至0.3g/L(即:50至300ppm)。When the first leveling agent is a polyimine, the concentration thereof is preferably from 0.01 to 0.2 g/L (i.e., from 10 to 200 ppm), most preferably from 0.02 to 0.15 g/L (i.e., from 20 to 150 ppm). When the first leveling agent is an imidazole-based quaternary ammonium salt material, the concentration thereof is preferably 0.02 to 0.8 g/L (i.e., 20 to 800 ppm), most preferably 0.05 to 0.3 g/L (i.e., 50 to 300 ppm). ).

較佳地,本發明無電鍍銅鍍液的整平劑組分還含有第二整平劑。該第二整平劑為烷基磺酸鹽類化合物。Preferably, the leveler component of the electroless copper plating bath of the present invention further contains a second leveling agent. The second leveling agent is an alkyl sulfonate compound.

較佳地,該第二整平劑的烷基磺酸鹽類化合物選自雙(3-磺酸丙基)二硫二鈉鹽(即:3,3'-Dithiobis-1-propanesulfonic acid disodium salt)、3-硫-異硫脲丙基磺酸鹽(即:3-S-Isothiuronium-propyl sulfonate)、喹醛啶丙磺酸芐(即:Quinaldinium Propane Sulfonic Betaine)、N,N-二甲基-二硫代氨基甲酸-3-(磺酸丙基酯)鈉鹽(即:N,N-Dimethyl-dithiocarbamic acid-3-(sulfopropyl ester)sodium salt),或3-(苯并噻唑基-2-硫代)丙磺酸鈉鹽(即:(3-(Benzothiazolyl-2-thio)propyl sulfonic acid Sodium Salt)。Preferably, the alkyl sulfonate compound of the second leveling agent is selected from the group consisting of bis(3-sulfopropyl)dithio disodium salt (ie: 3,3'-Dithiobis-1-propanesulfonic acid disodium salt , 3-Sulphos-Isothiouronylpropylsulfonate (ie, 3-S-Isothiuronium-propyl sulfonate), Quinaldinium Propane Sulfon Betaine, N,N-dimethyl -Sodium dithiocarbamic acid-3-(sulfopropyl ester) sodium salt, or 3-(benzothiazolyl-2) -Sodium thiosulfonate sodium salt (i.e., (3-(Benzothiazolyl-2-thio)propyl sulfonic acid Sodium Salt).

較佳地,該第二整平劑的濃度為0.0001至0.02g/L(即:0.1至20ppm)。更佳地,該第二整平劑的濃度為0.0002至0.01g/L(即:0.2至10ppm)。Preferably, the concentration of the second leveling agent is from 0.0001 to 0.02 g/L (i.e., from 0.1 to 20 ppm). More preferably, the concentration of the second leveling agent is from 0.0002 to 0.01 g/L (i.e., from 0.2 to 10 ppm).

錯合劑係與金屬離子形成錯合物,能有效提高鍍液穩定性、調整金屬析出的速度,以及改善鍍層的性質。較佳地,該錯合劑選自乙二胺四乙酸四鈉鹽、乙二胺四乙酸(即:Ethylenediaminetetraacetic acid)、N,N,N',N'-四-(2-羥基丙基)-乙烯二胺(即:N,N,N',N'-tetrakis-(2-hydroxypropyl)-ethylenediamine),或酒石酸鉀鈉(即:Potassium sodium tartrate)。The complexing agent forms a complex with the metal ions, which can effectively improve the stability of the plating solution, adjust the rate of metal precipitation, and improve the properties of the plating layer. Preferably, the complexing agent is selected from the group consisting of tetrasodium ethylenediaminetetraacetate, ethylenediaminetetraacetic acid, N, N, N', N'-tetrakis (2-hydroxypropyl)- Ethylene diamine (i.e., N, N, N', N'-tetrakis-(2-hydroxypropyl)-ethylenediamine), or sodium potassium tartrate (i.e., Potassium sodium tartrate).

當待鍍物表面有氣體析出時,為加速氣體的排出,能加入潤濕劑進行改善。潤濕劑能避免氣體與金屬沈積並列進行,降低針孔的形成。較佳地,無電鍍銅鍍液還含有潤濕劑。更佳地,潤濕劑選自聚醚、聚烯醇或聚磷酸脂(即:Polyphosphoester)。該聚醚例如但不限於聚乙二醇。該聚磷酸脂例如但不限於聚壬基酚聚氧乙烯醚磷酸酯(polyoxyethylene nonylphenyl ether branched phosphate)。When gas is deposited on the surface of the object to be plated, in order to accelerate the discharge of the gas, a wetting agent can be added for improvement. The wetting agent prevents gas and metal deposition from juxtaposed, reducing the formation of pinholes. Preferably, the electroless copper plating bath further contains a wetting agent. More preferably, the wetting agent is selected from the group consisting of polyethers, polyenols or polyphosphates (i.e., Polyphosphoester). The polyether is for example but not limited to polyethylene glycol. The polyphosphate is, for example but not limited to, polyoxyethylene nonylphenyl ether branched phosphate.

為了穩定鍍液,能透過添加安定劑的方式,控制鍍液的活性,避免劣化。較佳地,無電鍍銅鍍液還含有安定劑。安定劑選自氰化物(即:Cyanide)或2,2'-聯吡啶(即:2,2'-Bipyridine)。該氰化物例如但不限於亞鐵氰化鉀(Potassium ferrocyanide)。In order to stabilize the plating solution, the activity of the plating solution can be controlled by adding a stabilizer to avoid deterioration. Preferably, the electroless copper plating bath further contains a stabilizer. The stabilizer is selected from the group consisting of cyanide (ie, Cyanide) or 2,2'-bipyridine (ie, 2,2'-Bipyridine). The cyanide is, for example but not limited to, Potassium ferrocyanide.

本發明所採用的還原劑可以為任何在無電鍍銅中習知的組分。而較佳地,該還原劑選自甲醛(即:Formaldehyde)、乙醛酸(即:Glyoxylic acid)、聯胺(即:Hydrazine)、硼氫化鈉(即:Sodium borohydride)、二甲基胺硼烷(即:Dimethylamine borane)、N,N-二乙基胺硼烷(即:N,N-diethylamine borane),或次磷酸鈉(即:Sodium hypophosphite)。The reducing agent employed in the present invention may be any of the components conventionally known in electroless copper plating. Preferably, the reducing agent is selected from the group consisting of formaldehyde (ie, Formaldehyde), glyoxylic acid (ie, Glyoxylic acid), hydrazine (ie, Hydrazine), sodium borohydride (ie, sodium borohydride), and dimethylamine boron. Alkane (ie: Dimethylamine borane), N,N-diethylamine borane (or N,N-diethylamine borane), or sodium hypophosphite (ie: Sodium hypophosphite).

本發明之另一目的,即在提供一種增加銅鍍層平整性的無電鍍銅方法,其能使化學鍍銅層厚度在高厚度時具有較高的平整性。Another object of the present invention is to provide an electroless copper plating method for increasing the flatness of a copper plating layer which enables the electroless copper plating layer to have a high flatness at a high thickness.

於是,本發明增加銅鍍層平整性的無電鍍銅方法,包含以下步驟:取一試片經前處理後,再浸入如前述之無電鍍銅鍍液,以成長銅鍍層。Therefore, the method for increasing the flatness of the copper plating layer of the present invention comprises the steps of: taking a test piece after pretreatment, and then immersing the electroless copper plating solution as described above to grow the copper plating layer.

鍍層厚度的控制,是透過先計算每單位小時鍍層成長的厚度(即:鍍層成長速率),再以浸泡時間的控制來調整鍍層厚度。較佳地,鍍層成長速率為4至6微米/小時,更佳地,鍍層成長速率為4.5至5.5微米/小時。對應前述鍍層成長速率,該試片的浸泡時間控制在1小時以上。較佳地,該試片的浸泡時間控制在2至3小時。The thickness of the coating is controlled by first calculating the thickness of the plating growth per unit hour (ie, the growth rate of the coating), and then adjusting the thickness of the coating by the control of the immersion time. Preferably, the plating growth rate is 4 to 6 μm / hr, and more preferably, the plating growth rate is 4.5 to 5.5 μm / hr. The immersion time of the test piece is controlled to be 1 hour or more in accordance with the plating growth rate. Preferably, the soaking time of the test piece is controlled to be 2 to 3 hours.

無電鍍銅鍍液的溫度影響到鍍層成長的速度,當溫度低於40°C之時,成長過慢,而當溫度高於60°C之時,則有耗能的問題。因此較佳地,該無電鍍銅鍍液的溫度控制在40至60°C。更佳地,該無電鍍銅鍍液的溫度控制在45至55°C。The temperature of the electroless copper plating bath affects the growth rate of the plating layer. When the temperature is lower than 40 ° C, the growth is too slow, and when the temperature is higher than 60 ° C, there is a problem of energy consumption. Therefore, preferably, the temperature of the electroless copper plating bath is controlled at 40 to 60 °C. More preferably, the temperature of the electroless copper plating bath is controlled at 45 to 55 °C.

本發明之功效在於:透過在無電鍍銅鍍液中添加第一整平劑,能使銅鍍層在超過8微米後,Ra值低於0.35,平整度較高。The effect of the invention is that by adding the first leveling agent to the electroless copper plating bath, the copper plating layer has an Ra value of less than 0.35 and a flatness after being more than 8 micrometers.

本發明無電鍍銅鍍液,含有溶劑、銅離子、錯合劑、還原劑,及整平劑組分。其中,整平劑組分含有第一整平劑及第二整平劑。該第一整平劑選自聚亞胺、咪唑系季銨鹽材料或其等的組合。該第二整平劑為烷基磺酸鹽類化合物。透過本發明的無電鍍銅鍍液所製得的鍍層,在高厚度(大於8微米)時具有較高的平整性,Ra值能低於0.35。The electroless copper plating solution of the invention comprises a solvent, a copper ion, a binder, a reducing agent, and a leveling agent component. Wherein, the leveling agent component comprises a first leveling agent and a second leveling agent. The first leveling agent is selected from the group consisting of polyimine, imidazole quaternary ammonium salt materials, or the like. The second leveling agent is an alkyl sulfonate compound. The plating layer produced by the electroless copper plating bath of the present invention has high flatness at a high thickness (greater than 8 μm) and an Ra value of less than 0.35.

本發明將就以下實施例作進一步說明,但應瞭解的是,該等實施例僅為例示說明之用,而不應被解釋為本發明實施之限制。The invention is further described in the following examples, but it should be understood that these examples are for illustrative purposes only and are not to be construed as limiting.

[[ 實施例Example 1]1]

鍍液製備Plating solution preparation

取5.29g的氯化銅(即:含有2.5g的銅離子)放入1L之燒杯中,並加入0.5L的水,溶解後加入乙二胺四乙酸四鈉鹽(EDTA-4Na)作為錯合劑,攪拌至溶解,並加入氫氧化鈉(NaOH)調整pH值至12.5以上,再加熱至55°C,隨後加入0.1g的聚壬基酚聚氧乙烯醚磷酸酯(購自RHODIA,品名為RHODAFAC® RE-610)作為潤濕劑,以及0.004g的2,2'-聯吡啶(購自Merck)作為安定劑,接著,再加入0.2g(即:200ppm)的咪唑/環氧氯丙烷共聚物(購自BASF,品名為Lugavan® IZE,下稱IZE)作為第一整平劑,待其等溶解後,再加入16g且重量百分濃度為24wt%的甲醛(Formalin)作為還原劑,並加水至鍍液中使整體體積為1L,最後放入試鍍的銅箔片起鍍5分鐘活化後,完成無電鍍銅鍍液之製備。Take 5.29g of copper chloride (ie: containing 2.5g of copper ions) into a 1L beaker, add 0.5L of water, dissolve and add ethylenediaminetetraacetic acid tetrasodium salt (EDTA-4Na) as a wrong agent Stir until dissolved, and add sodium hydroxide (NaOH) to adjust the pH to above 12.5, then heat to 55 ° C, then add 0.1g of polydecylphenol ethoxylate phosphate (purchased from RHODIA, the product name is RHODAFAC ® RE-610) as a wetting agent, and 0.004g of 2,2'-bipyridyl (purchased from Merck) as a stabilizer, followed by 0.2g (ie: 200ppm) of imidazole/epichlorohydrin copolymer (purchased from BASF, the product name is Lugavan® IZE, hereinafter referred to as IZE) as the first leveling agent. After it is dissolved, add 16g of formaldehyde (Formalin) with a concentration of 24wt% as a reducing agent and add water. The total volume was 1 L in the plating solution, and finally, the copper foil which was put into the test plating was activated by plating for 5 minutes, and the preparation of the electroless copper plating solution was completed.

樣品製備Sample Preparation

試片前處理步驟:取一電解銅箔試片(長*寬為5cm*5cm、厚度為18.5微米、Ra=0.192),浸入陰極電解脫脂液,並在60°C的溫度下以4ASD之電流密度進行脫脂5分鐘,然後取出試片水洗,再於常溫下浸泡濃度為10v/v%之稀硫酸2分鐘,待時間到達後取出水洗之,完成前處理步驟。Pre-treatment steps: Take an electrolytic copper foil test piece (length * width 5cm * 5cm, thickness 18.5 microns, Ra = 0.122), immerse in the cathode electrolytic degreasing solution, and apply 4ASD current at 60 ° C temperature The density was degreased for 5 minutes, then the test piece was taken out for washing, and then dilute sulfuric acid having a concentration of 10 v/v% was immersed at room temperature for 2 minutes. After the time was reached, the water was washed out to complete the pretreatment step.

速率估算Rate estimation

取一完成前處理的試片,將之浸入前述配製好的無電鍍銅鍍液,於55°C之溫度下浸泡30分鐘,再取出該試片並以水清洗及乾燥,而後量取厚度,估算出每30分鐘銅鍍層成長的速率。本實施例之速率約為5.5至6微米/小時。Taking a pre-processed test piece, immersing it in the prepared electroless copper plating solution, immersing it at a temperature of 55 ° C for 30 minutes, taking out the test piece, washing and drying with water, and then measuring the thickness, Estimate the rate of growth of the copper plating every 30 minutes. The rate of this embodiment is about 5.5 to 6 microns per hour.

無電鍍銅Electroless copper

取前述完成前處理的試片,將之浸入前述配製好的無電鍍銅鍍液,於55°C之溫度下浸泡,每過30分鐘即分析水位、銅離子、還原劑及氫氧化鈉之濃度,不足者即進行補充,待該試片浸泡2至3小時,於銅鍍層達厚度達12微米之後,再取出該試片並以水清洗及乾燥。Take the pre-finished test piece, immerse it in the prepared electroless copper plating bath, soak it at 55 ° C, and analyze the water level, copper ion, reducing agent and sodium hydroxide concentration every 30 minutes. The insufficiency is supplemented. After the test piece is immersed for 2 to 3 hours, after the copper plating layer reaches a thickness of 12 μm, the test piece is taken out and washed with water and dried.

樣品測試test sample

取前述鍍銅後的試片,以表面量測儀(Profile meter,購自Kosaka Laboratory LTD,日本小坂研究所,型號:Surf corder ET 4000A)進行測定,測試方式係以觸針移動紀錄Z軸之變動,測得表面粗糙度Ra值為0.32。The test piece after the copper plating was taken, and the surface measuring instrument (Profile meter, purchased from Kosaka Laboratory LTD, Japan Otaru Institute, model: Surf corder ET 4000A) was used for the measurement, and the test method was to record the Z-axis with the stylus movement. The surface roughness Ra was measured to be 0.32.

[[ 實施例Example 22 to 3]3]

參表1,本系列實施例與實施例1大致上相同,主要差異在於鍍液製備時採用的第一整平劑為聚乙烯亞胺,分子量分別為1400及200。其中,分子量1400之聚乙烯亞胺係購自BASF,品名為Lugalvan® G 20(下稱G-20),分子量200之聚乙烯亞胺亦購自BASF,品名為Lugalvan® G 35(下稱G-35)。其等地添加量皆為0.05g(即:50ppm)。經測得表面粗糙度Ra值分別為0.35及0.33。Referring to Table 1, the examples in this series are substantially the same as those in Example 1. The main difference is that the first leveling agent used in the preparation of the plating solution is polyethyleneimine, and the molecular weights are 1400 and 200, respectively. Among them, the polyethyleneimine of molecular weight 1400 is purchased from BASF, the product name is Lugalvan® G 20 (hereinafter referred to as G-20), and the polyethyleneimine of molecular weight 200 is also purchased from BASF, and the product name is Lugalvan® G 35 (hereinafter referred to as G -35). The amount of addition thereof was 0.05 g (i.e., 50 ppm). The surface roughness Ra values were measured to be 0.35 and 0.33, respectively.

[[ 比較例Comparative example 1]1]

參表1,本比較例與實施例1大致相同,主要差異在於鍍液製備時並未加入第一整平劑及第二整平劑。所製得的銅層Ra值為0.7。Referring to Table 1, this comparative example is substantially the same as that of Example 1, and the main difference is that the first leveling agent and the second leveling agent are not added in the preparation of the plating solution. The obtained copper layer had an Ra value of 0.7.

當無電鍍液中沒有添加整平劑時,銅鍍層達到厚度12微米之後,表面十分粗糙,Ra值為0.7,但當加入聚亞胺或咪唑系季銨鹽材料系列之整平劑後,在高膜厚下,Ra值可降至0.35以下(參實施例1至3)。因此,添加本發明之第一整平劑確實能讓銅鍍層在高膜厚下有平整化的效果。When no leveling agent is added to the electroless plating solution, the thickness of the copper plating layer after reaching a thickness of 12 μm is very rough, and the Ra value is 0.7, but when a flattening agent of the polyimide or imidazole quaternary ammonium salt material series is added, Under high film thickness, the Ra value can be reduced to less than 0.35 (see Examples 1 to 3). Therefore, the addition of the first leveling agent of the present invention does allow the copper plating layer to have a flattening effect at a high film thickness.

[[ 實施例Example 4]4]

參表1,本實施例與實施例1大致上相同,主要差異在於鍍液製備時,於加入第一整平劑IZE之後,再加入0.008g(即:8ppm)的喹醛啶丙磺酸芐(購自HOPAX,品名為QPS)作為第二整平劑,而後再續行添加還原劑、補水至1L及試鍍操作。由此鍍液製得的鍍層銅,經測其表面粗糙度Ra值為0.23。Referring to Table 1, this example is substantially the same as Example 1. The main difference is that after the plating solution is prepared, after adding the first leveling agent IZE, 0.008 g (i.e., 8 ppm) of benzyl quinone propyl sulfonate is further added. (purchased from HOPAX, the product name is QPS) as the second leveling agent, and then continue to add reducing agent, hydration to 1L and trial plating operation. The plated copper obtained by the plating solution was measured to have a surface roughness Ra of 0.23.

[[ 實施例Example 5]5]

參表1,本實施例與實施例4大致上相同,採用的還原劑為重量百分濃度40wt%之乙醛酸,至於第二整平劑則是添加0.005g(即:5ppm)的3-(苯并噻唑基-2-硫代)丙磺酸鈉鹽(購自HOPAX,品名為ZPS)。經測得表面粗糙度Ra值為0.26。Referring to Table 1, this example is substantially the same as Example 4, using a reducing agent of 40% by weight of glyoxylic acid, and a second leveling agent of adding 0.005 g (ie: 5 ppm) of 3- Sodium (benzothiazolyl-2-thio)propanesulfonate (purchased from HOPAX, trade name ZPS). The surface roughness Ra was measured to be 0.26.

[[ 實施例Example 6]6]

參表1,本實施例與實施例4大致上相同,主要差異在於鍍液製備時採用的第二整平劑則是添加0.005g(即:5ppm)的雙(3-磺酸丙基)二硫二鈉鹽(購自HOPAX,品名為SPS)。經測得表面粗糙度Ra值為0.23。Referring to Table 1, this example is substantially the same as Example 4, the main difference being that the second leveling agent used in the preparation of the plating solution is added with 0.005 g (i.e., 5 ppm) of bis(3-sulfonylpropyl) Sulfur disodium salt (purchased from HOPAX, product name SPS). The surface roughness Ra was measured to be 0.23.

[[ 實施例Example 7]7]

參表1,本實施例與實施例4大致上相同,主要差異在於鍍液製備時第一整平劑是採用分子量為1400的聚乙烯亞胺(G-20),並添加0.05g(即:50ppm),第二整平劑則是添加0.003g(即:3ppm)的3-硫-異硫脲丙基磺酸鹽(3-S-Isothiuronium-propylsulfonate簡稱UPS,購自HOPAX)。經測得表面粗糙度Ra值為0.28。Referring to Table 1, this example is substantially the same as Example 4, the main difference being that the first leveling agent in the preparation of the plating solution is a polyethyleneimine (G-20) having a molecular weight of 1400, and 0.05 g is added (ie: 50 ppm), the second leveling agent is added 0.003 g (ie: 3 ppm) of 3-sulfur-isothiourea sulfonate (3-S-Isothiuronium-propylsulfonate UPS, available from HOPAX). The surface roughness Ra was measured to be 0.28.

[[ 實施例Example 8]8]

參表1,本實施例與實施例4大致上相同,主要差異在於鍍液製備時採用的第一整平劑為分子量200之聚乙烯亞胺(購自BASF,品名為Lugalvan® G 35,下稱G-35),而第二整平劑採用SPS。經測得表面粗糙度Ra值為0.23。Referring to Table 1, this example is substantially the same as Example 4, the main difference being that the first leveling agent used in the preparation of the plating solution is a polyethyleneimine having a molecular weight of 200 (purchased from BASF, the product name is Lugalvan® G 35, under G-35), and the second leveling agent uses SPS. The surface roughness Ra was measured to be 0.23.

[[ 實施例Example 99 to 11]11]

參表1,實施例9至11大致與實施例1相同,差異僅在於鍍液製備所採用的藥品不同。無電鍍銅鍍液的組份已列於表1,且Ra值分別為0.28、0.27、0.25。Referring to Table 1, Examples 9 to 11 are substantially the same as in Embodiment 1, except that the chemicals used for the preparation of the plating solution are different. The components of the electroless copper plating bath are listed in Table 1, and the Ra values are 0.28, 0.27, and 0.25, respectively.

[[ 比較例Comparative example 22 and 3]3]

參表1,本系列比較例與實施例1大致相同,只是在鍍液製備時,僅加入SPS作為整平劑組份或未加入整平劑組份。僅加入SPS其無鍍層產生,無法測得Ra值。而未加入整平劑組份者,Ra值為0.62。Referring to Table 1, this series of comparative examples is substantially the same as that of Example 1, except that in the preparation of the plating solution, only SPS is added as a leveling agent component or no leveling agent component is added. Only the SPS was added without plating, and the Ra value could not be measured. The Ra value was 0.62 when no leveling agent component was added.

由實施例4至11可得知,當無電鍍銅鍍液中同時含有第一整平劑及第二整平劑時,鍍層厚度達12微米後的Ra值皆小於0.3,範圍約在0.23至0.28之間。因此,若整平劑組分中還含有第二整平劑時,能再進一步地降低鍍層的Ra值至低於0.3。由此可知,同時第一整平劑及第二整平劑者,能更進一步地增加平整度,降低Ra值。而僅加入第二整平劑者,或無鍍層產生,又或Ra值較高。鍍層厚度不足的問題在於,當沒有添加該第一整平劑之情況下,會使第二整平劑的共鍍快速,導致銅離子停止反應,無法達到足夠的厚度。若鍍液中僅有第二整平劑,雖然有整平之效,但卻無法獲得足夠厚度的鍍層。It can be seen from Examples 4 to 11 that when the electroless copper plating solution contains both the first leveling agent and the second leveling agent, the Ra value after the thickness of the plating layer is less than 0.3, and the range is about 0.23. Between 0.28. Therefore, if the leveling agent component further contains a second leveling agent, the Ra value of the plating layer can be further lowered to less than 0.3. It can be seen that at the same time, the first leveling agent and the second leveling agent can further increase the flatness and reduce the Ra value. Only the second leveling agent is added, or no plating is produced, or the Ra value is high. The problem of insufficient plating thickness is that when the first leveling agent is not added, the co-plating of the second leveling agent is fast, causing the copper ions to stop reacting and failing to reach a sufficient thickness. If there is only a second leveling agent in the plating solution, although there is a leveling effect, it is impossible to obtain a plating layer having a sufficient thickness.

表1 註:錯合劑C1為乙二胺四乙酸四鈉鹽;錯合劑C2為N,N,N',N'-四(2-羥基丙基)乙烯二胺,購自BASF,品名為Lutropur® Q-75;錯合劑C3為酒石酸鉀鈉;還原劑R1為甲醛(Formalin,重量百分濃度:24wt%);還原劑R2為乙醛酸(Glyoxylic acid,重量百分濃度:40wt%);潤濕劑W1為聚壬基酚聚氧乙烯醚磷酸酯(Polyoxyethylene nonylphenyl ether branched phosphate,購自RHODIA,品名為RHODAFAC® RE-610);潤濕劑W2為聚乙二醇(polyethylene glycol,分子量為6000,購自Dow,品名為CARBOWAX™ PEG 6000);安定劑S1為2,2'-聯吡啶(2,2'-bipyridine,購自Merck);安定劑S2為亞鐵氰化鉀(Potassium ferrocyanide,購自Merck)。Table 1 Note: The wrong agent C1 is ethylenediaminetetraacetic acid tetrasodium salt; the wrong agent C2 is N, N, N', N'-tetrakis (2-hydroxypropyl) ethylene diamine, purchased from BASF, the product name is Lutropur® Q -75; the wrong agent C3 is sodium potassium tartrate; the reducing agent R1 is formaldehyde (Formalin, weight percent concentration: 24% by weight); the reducing agent R2 is Glyoxylic acid (weight percent concentration: 40% by weight); The agent W1 is polyoxyethylene nonylphenyl ether branched phosphate (purchased from RHODIA, the product name is RHODAFAC® RE-610); the wetting agent W2 is polyethylene glycol (polyethylene glycol, molecular weight 6000, Available from Dow under the trade name CARBOWAXTM PEG 6000); stabilizer S1 is 2,2'-bipyridine (2,2'-bipyridine, available from Merck); stabilizer S2 is potassium ferrocyanide (Potassium ferrocyanide) From Merck).

該第一整平劑係採用聚亞胺或咪唑系季銨鹽材料,不會被醛類反應而裂解,鍍液整體更臻穩定,並且,在使用時,該第一整平劑會在待鍍物的表面形成一遮蔽層,該遮蔽層會迫使銅離子以較為一致的方式進行排列,並附著於待鍍物的表層,而後再進行還原,並且,該遮蔽層還會抑制第二整平劑(烷基磺酸鹽類化合物)進入鍍層的速度,使得在鍍層厚度達8微米後可得到適當的硫含量。因此,本發明之無電鍍銅鍍液確實能解決平整性之問題。The first leveling agent is made of a polyimine or an imidazole-based quaternary ammonium salt material, is not cracked by the reaction of the aldehyde, and the plating solution is more stable overall, and, when used, the first leveling agent will be treated. The surface of the plating forms a shielding layer which forces the copper ions to be aligned in a more uniform manner and adheres to the surface layer of the object to be plated, and then is reduced, and the shielding layer also suppresses the second leveling. The rate at which the agent (alkyl sulfonate compound) enters the coating allows a suitable sulfur content to be obtained after a plating thickness of 8 microns. Therefore, the electroless copper plating bath of the present invention can solve the problem of flatness.

[[ 實施例Example 1212 to 15]15]

實施例12至15與實施例1大致相同,只是在鍍液製備時,差別在於試劑組份(見表2),以及操作溫度是控制在50°C。其中,其等之Ra值分別為0.25、0.24、0.26、0.24,皆小於0.35。Examples 12 to 15 were substantially the same as Example 1, except that in the preparation of the plating solution, the difference was in the reagent component (see Table 2), and the operating temperature was controlled at 50 °C. Among them, the Ra values thereof are 0.25, 0.24, 0.26, and 0.24, respectively, and are less than 0.35.

[[ 實施例Example 16]16]

本實施例的鍍液製備與實施例1大致相同,差異在於試劑的組分不同(見表2),並且,第一整平劑採用IZE與G-20混和之形式,並再加入第二整平劑SPS。其Ra值為0.27,小於0.35。The preparation of the plating solution of this embodiment is substantially the same as that of Example 1, except that the components of the reagent are different (see Table 2), and the first leveling agent is mixed with IZE and G-20, and then added to the second whole. Flat agent SPS. Its Ra value is 0.27 and less than 0.35.

表2 註:錯合劑C1為乙二胺四乙酸四鈉鹽;錯合劑C2為N,N,N',N'-四(2-羥基丙基)乙烯二胺,購自BASF,品名為Lutropur® Q-75;錯合劑C3為酒石酸鉀鈉;還原劑R1為甲醛(Formalin,重量百分濃度:24wt%);還原劑R2為乙醛酸(Glyoxylic acid,重量百分濃度:40wt%);潤濕劑W1為聚壬基酚聚氧乙烯醚磷酸酯(Polyoxyethylene nonylphenyl ether branched phosphate,購自RHODIA,品名為RHODAFAC® RE-610);潤濕劑W2為聚乙二醇(polyethylene glycol,分子量為6000,購自Dow,品名為CARBOWAX™ PEG 6000);安定劑S1為2,2'-聯吡啶(2,2'-bipyridine,購自Merck);安定劑S2為亞鐵氰化鉀(Potassium ferrocyanide,購自Merck)。Table 2 Note: The wrong agent C1 is ethylenediaminetetraacetic acid tetrasodium salt; the wrong agent C2 is N, N, N', N'-tetrakis (2-hydroxypropyl) ethylene diamine, purchased from BASF, the product name is Lutropur® Q -75; the wrong agent C3 is sodium potassium tartrate; the reducing agent R1 is formaldehyde (Formalin, weight percent concentration: 24% by weight); the reducing agent R2 is Glyoxylic acid (weight percent concentration: 40% by weight); The agent W1 is polyoxyethylene nonylphenyl ether branched phosphate (purchased from RHODIA, the product name is RHODAFAC® RE-610); the wetting agent W2 is polyethylene glycol (polyethylene glycol, molecular weight 6000, Available from Dow under the trade name CARBOWAXTM PEG 6000); stabilizer S1 is 2,2'-bipyridine (2,2'-bipyridine, available from Merck); stabilizer S2 is potassium ferrocyanide (Potassium ferrocyanide) From Merck).

透過實施例12至15可知,本發明無電鍍銅鍍液之操作溫度在較低溫時,仍能形成厚度達12微米之銅鍍層,並且,其等地Ra值皆小於0.35,能符合MID製程中有關天線的製作要求。實施例16的第一整平劑採用混合形式,並在組以第二整平劑,所製得的銅鍍層依然具有高平整性(Ra值0.27)。It can be seen from Examples 12 to 15 that the operating temperature of the electroless copper plating bath of the present invention can still form a copper plating layer having a thickness of 12 μm at a lower temperature, and the Ra value thereof is less than 0.35, which can meet the MID process. Requirements for the production of the antenna. The first leveling agent of Example 16 was in a mixed form, and in the group of the second leveling agent, the resulting copper plating layer still had high flatness (Ra value of 0.27).

綜上所述,本發明之無電鍍銅鍍液能使銅鍍層在超過8微米後,Ra值低於0.35,平整度較高,故確實能達成本發明之目的。In summary, the electroless copper plating bath of the present invention enables the copper plating layer to have an Ra value of less than 0.35 and a high flatness after exceeding 8 μm, so that the object of the present invention can be achieved.

惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the above is only the embodiment of the present invention, and the scope of the invention is not limited thereto, and all the equivalent equivalent changes and modifications according to the scope of the patent application and the patent specification of the present invention are still The scope of the invention is covered.

Claims (12)

一種無電鍍銅鍍液,含有溶劑、銅離子、錯合劑、還原劑,及整平劑組分,其中,整平劑組分含有第一整平劑,該第一整平劑選自聚亞胺、咪唑系季銨鹽材料或其等的組合,該第一整平劑的分子量介於100至3000,該第一整平劑的濃度為0.01至0.8g/L。 An electroless copper plating solution comprising a solvent, a copper ion, a binder, a reducing agent, and a leveling agent component, wherein the leveling agent component comprises a first leveling agent, and the first leveling agent is selected from the group consisting of poly A combination of an amine, an imidazole-based quaternary ammonium salt material or a combination thereof, the first leveling agent having a molecular weight of from 100 to 3,000, and the first leveling agent having a concentration of from 0.01 to 0.8 g/L. 如請求項1所述的無電鍍銅鍍液,其中,該第一整平劑的聚亞胺為聚乙烯亞胺,咪唑系季銨鹽材料為咪唑/環氧氯丙烷共聚物。 The electroless copper plating solution according to claim 1, wherein the first leveling agent polyimine is polyethyleneimine, and the imidazole quaternary ammonium salt material is imidazole/epichlorohydrin copolymer. 如請求項1所述的無電鍍銅鍍液,其中,整平劑組分還含有第二整平劑,該第二整平劑為烷基磺酸鹽類化合物。 The electroless copper plating solution according to claim 1, wherein the leveling agent component further contains a second leveling agent, and the second leveling agent is an alkylsulfonate compound. 如請求項3所述的無電鍍銅鍍液,其中,該第二整平劑的烷基磺酸鹽類化合物選自雙(3-磺酸丙基)二硫二鈉鹽、3-硫-異硫脲丙基磺酸鹽、喹醛啶丙磺酸芐、N,N-二甲基-二硫代氨基甲酸-3-(磺丙基酯)鈉鹽,或3-(苯并噻唑基-2-硫代)丙磺酸鈉鹽。 The electroless copper plating solution according to claim 3, wherein the alkylating agent of the second leveling agent is selected from the group consisting of bis(3-sulfonylpropyl)disulfide disodium salt, 3-sulfur- Isothiourea propyl sulfonate, benzyl quinone propyl sulfonate, sodium N,N-dimethyl-dithiocarbamic acid-3-(sulfopropyl ester), or 3-(benzothiazolyl) Sodium 2-thio)propane sulfonate. 如請求項1所述的無電鍍銅鍍液,其中,該第一整平劑的濃度為0.02至0.3g/L。 The electroless copper plating solution according to claim 1, wherein the concentration of the first leveling agent is 0.02 to 0.3 g/L. 如請求項1所述的無電鍍銅鍍液,其中,當第一整平劑為聚亞胺時,其濃度為0.01至0.2g/L,當第一整平劑為咪唑系季銨鹽材料時,其濃度為0.02至0.8g/L。 The electroless copper plating solution according to claim 1, wherein when the first leveling agent is a polyimine, the concentration is 0.01 to 0.2 g/L, and when the first leveling agent is an imidazole-based quaternary ammonium salt material The concentration is 0.02 to 0.8 g/L. 如請求項6所述的無電鍍銅鍍液,其中,當第一整平劑為聚亞胺時,其濃度為0.02至0.15g/L,當第一整平劑為咪唑系季銨鹽材料時,其濃度為0.05至0.3g/L。 The electroless copper plating solution according to claim 6, wherein when the first leveling agent is a polyimine, the concentration is 0.02 to 0.15 g/L, and when the first leveling agent is an imidazole-based quaternary ammonium salt material The concentration is 0.05 to 0.3 g/L. 如請求項3所述的無電鍍銅鍍液,其中,該第二整平劑的濃度為0.0001至0.02g/L。 The electroless copper plating solution according to claim 3, wherein the concentration of the second leveling agent is 0.0001 to 0.02 g/L. 如請求項8所述的無電鍍銅鍍液,其中,該第二整平劑的濃度為0.0002至0.01g/L。 The electroless copper plating solution according to claim 8, wherein the concentration of the second leveling agent is 0.0002 to 0.01 g/L. 一種增加銅鍍層平整性的無電鍍銅方法,包含以下步驟:取一試片經前處理後,再浸入如請求項1所述之無電鍍銅鍍液,以成長銅鍍層。 An electroless copper plating method for increasing the flatness of a copper plating layer comprises the steps of: immersing a test piece after pretreatment, and then immersing the electroless copper plating solution as described in claim 1 to grow a copper plating layer. 如請求項10所述的增加銅鍍層平整性的無電鍍銅方法,其中,該無電鍍銅鍍液的溫度控制在40至60℃。 An electroless copper plating method for increasing the flatness of a copper plating layer as claimed in claim 10, wherein the temperature of the electroless copper plating bath is controlled at 40 to 60 °C. 如請求項10所述的增加銅鍍層平整性的無電鍍銅方法,其中,該試片浸泡於該無電鍍銅鍍液的時間為1小時以上。 The electroless copper plating method for increasing the flatness of a copper plating layer according to claim 10, wherein the test piece is immersed in the electroless copper plating bath for a time of 1 hour or longer.
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