TWI604586B - Semiconductor memory card and its manufacturing method - Google Patents
Semiconductor memory card and its manufacturing method Download PDFInfo
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- TWI604586B TWI604586B TW100108390A TW100108390A TWI604586B TW I604586 B TWI604586 B TW I604586B TW 100108390 A TW100108390 A TW 100108390A TW 100108390 A TW100108390 A TW 100108390A TW I604586 B TWI604586 B TW I604586B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
本發明之實施形態係關於一種半導體記憶卡及其製造方法。Embodiments of the present invention relate to a semiconductor memory card and a method of fabricating the same.
本申請案享受以日本專利申請第2010-194090號(申請日:2010年8月31日)為基礎申請案的優先權。本申請案藉由準此基礎申請案而包含該基礎申請案之全部內容。The present application has priority on the application based on Japanese Patent Application No. 2010-194090 (filing date: August 31, 2010). This application contains the entire contents of the basic application by way of this basic application.
先前已知有一種於引線架上安裝快閃記憶體等之半導體記憶體,且以密封樹脂密封之半導體記憶卡。該構造之半導體記憶卡,其資料之讀寫用之外部端子係藉由使引線架之一部份(端子部)自密封樹脂局部露出而形成。A semiconductor memory card in which a semiconductor memory such as a flash memory or the like is mounted on a lead frame and sealed with a sealing resin has been known. In the semiconductor memory card of this configuration, the external terminals for reading and writing data are formed by partially exposing one portion (terminal portion) of the lead frame from the sealing resin.
製造上述構造之半導體記憶卡時,引線架之端子部在樹脂密封前係被連結支持於引線架的框部。且,於樹脂密封後,切斷引線架之端子部與框部,使成為作為半導體記憶卡之外形。因此,在半導體記憶卡完成之狀態下,存在引線架之一部份未被樹脂覆蓋地自引線架之端子部露出的可能性。其結果,有導致存儲於半導體記憶體的資料損毀的可能性。When the semiconductor memory card having the above structure is manufactured, the terminal portion of the lead frame is connected to the frame portion of the lead frame before the resin sealing. Further, after the resin is sealed, the terminal portion and the frame portion of the lead frame are cut to have a shape as a semiconductor memory card. Therefore, in the state where the semiconductor memory card is completed, there is a possibility that a part of the lead frame is exposed from the terminal portion of the lead frame without being covered with the resin. As a result, there is a possibility that the data stored in the semiconductor memory is damaged.
將半導體記憶體安裝於引線架且以密封樹脂密封的半導體記憶卡,被要求能夠防止存儲於半導體記憶體中之資料之損毀。A semiconductor memory card in which a semiconductor memory is mounted on a lead frame and sealed with a sealing resin is required to prevent damage of data stored in the semiconductor memory.
本發明之一實施形態之目的係提供一種半導體記憶卡及其製造方法,該記憶卡可防止安裝於引線架上之半導體記憶體所存儲的資料之損毀。It is an object of an embodiment of the present invention to provide a semiconductor memory card and a method of fabricating the same that prevent damage to data stored in a semiconductor memory mounted on a lead frame.
根據本發明之一實施形態,半導體記憶卡包含:引線架,其形成有記憶體搭載部、包含電源端子及信號端子之複數個端子、及較該端子更為窄幅且自各端子延伸至卡前端部的複數個連接部;半導體記憶體,其搭載於引線架之記憶體搭載部;及樹脂,其係以使電源端子露出至較信號端子更接近於卡前端面之部位,且於卡前端部使複數個連接部露出之方式,密封搭載有半導體記憶體之引線架。半導體記憶卡係以使複數個連接部在卡前端部之露出位置,自將信號端子之各者往卡前端面側延長之區域偏向卡前端面之長度方向的方式,使複數個連接部從各端子延伸。According to an embodiment of the present invention, a semiconductor memory card includes a lead frame formed with a memory mounting portion, a plurality of terminals including a power supply terminal and a signal terminal, and a narrower width than the terminal and extending from each terminal to a card front end a plurality of connection portions of the portion; a semiconductor memory device mounted on the memory mounting portion of the lead frame; and a resin for exposing the power supply terminal to a portion closer to the front end surface of the card than the signal terminal, and at the front end portion of the card The lead frame on which the semiconductor memory is mounted is sealed so that a plurality of connection portions are exposed. The semiconductor memory card has a plurality of connection portions from the respective positions in which the plurality of connection portions are exposed at the front end portion of the card from the region where the signal terminals extend toward the card front end surface side toward the longitudinal direction of the card front end surface. The terminal extends.
根據本發明之實施形態,能夠提供一種可防止安裝於引線架上之半導體記憶體所存儲的資料之損毀之半導體記憶卡及其製造方法。According to an embodiment of the present invention, it is possible to provide a semiconductor memory card capable of preventing damage of data stored in a semiconductor memory mounted on a lead frame and a method of manufacturing the same.
以下兹參照附圖,詳細說明實施形態之半導體記憶卡及其製造方法。另,本發明並不受限於該等之實施形態。Hereinafter, a semiconductor memory card according to an embodiment and a method of manufacturing the same will be described in detail with reference to the accompanying drawings. Further, the present invention is not limited to the embodiments.
就第1實施形態之半導體記憶卡進行說明。作為第1實施形態之半導體記憶卡,以microSDTM記憶卡(以下稱為microSD記憶卡)為例予以說明。圖1-1係microSD記憶卡10之仰視圖,圖1-2係microSD記憶卡10之俯視透視圖,圖1-3係microSD記憶卡10之側面透視圖。再者,圖1-2(a)係顯示microSD記憶卡10之整體,圖1-2(b)係放大顯示圖1-2(a)之一部份(I-IIb部)。又,圖1-3係顯示自圖1-2之右側觀察microSD記憶卡10之狀態。此處,圖1-1~1-3之紙面向上方向係朝向連接器之插入側,將該方向之端定義為「前端」。又,將圖1-1之視點方向、圖1-2之朝紙面深處方向、圖1-3之紙面右方向定義為「下(底面側)」、將反方向定義為「上」。又,將圖1-1、圖1-2之紙面左右方向定義為「橫(側面側)」。The semiconductor memory card of the first embodiment will be described. As a first embodiment of a semiconductor memory card, microSD (TM) memory card in order (hereinafter referred to as microSD card) described as an example. 1-1 is a bottom view of the microSD memory card 10, FIG. 1-2 is a top perspective view of the microSD memory card 10, and FIGS. 1-3 are side perspective views of the microSD memory card 10. Further, Fig. 1-2(a) shows the entirety of the microSD memory card 10, and Fig. 1-2(b) shows an enlarged portion (I-IIb portion) of Fig. 1-2(a). Further, Fig. 1-3 shows the state in which the microSD memory card 10 is viewed from the right side of Fig. 1-2. Here, the paper of FIGS. 1-1 to 1-3 faces the insertion side of the connector in the upward direction, and the end of the direction is defined as the "front end". Further, the direction of the viewpoint of FIG. 1-1, the direction toward the depth of the paper surface of FIG. 1-2, the right direction of the paper surface of FIGS. 1-3 are defined as "lower (bottom side)", and the reverse direction is defined as "upper". Moreover, the left-right direction of the paper of FIGS. 1-1 and 1-2 is defined as "horizontal (side surface side)".
於引線架1之上,除了作為半導體記憶體之NAND型快閃記憶體(以下簡稱NAND)2以外,亦安裝有被動零件3(電容器或熔絲等)。於NAND2之上形成有重配線層,於該重配線層上安裝有用以控制NAND2之控制器4。另,雖此處係以使用NAND型快閃記憶體之構成為例予以說明,但並不受限於NAND型快閃記憶體。例如,亦可應用NOR型快閃記憶體。於重配線層中形成有用以連接控制器4與引線架1之配線2a。控制器4之端子與重配線層上之配線2a之間、及重配線層上之配線2a與引線架1之間、以及重配線層上之配線2a彼此係利用接合導線5而連接。安裝有NAND2或被動零件3、控制器4,並利用接合導線5將其連接之引線架1,係藉由密封樹脂8密封。其中,引線架1之一部份(後述之端子部1b)係在卡前端附近於底面側露出,且形成有用以與連接器電性連接之外部端子6。On the lead frame 1, in addition to the NAND type flash memory (hereinafter referred to as NAND) 2 as a semiconductor memory, a passive component 3 (capacitor, fuse, etc.) is also mounted. A redistribution layer is formed over NAND2, and a controller 4 for controlling NAND2 is mounted on the redistribution layer. In addition, although the configuration using the NAND type flash memory is described as an example here, it is not limited to the NAND type flash memory. For example, a NOR type flash memory can also be applied. A wiring 2a for connecting the controller 4 and the lead frame 1 is formed in the heavy wiring layer. The terminal of the controller 4 and the wiring 2a on the redistribution layer, and the wiring 2a on the heavy wiring layer and the lead frame 1 and the wiring 2a on the heavy wiring layer are connected to each other by the bonding wires 5. The lead frame 1 to which the NAND2 or the passive component 3, the controller 4 is mounted, and which is joined by the bonding wires 5 is sealed by the sealing resin 8. Among them, a part of the lead frame 1 (a terminal portion 1b to be described later) is exposed on the bottom surface side in the vicinity of the front end of the card, and an external terminal 6 for electrically connecting to the connector is formed.
外部端子6中、分別被分配電源(VDD)及接地電位(VSS)之電源端子6d、6f,係露出至較被分配信號之信號端子6a~6c、6e、6g、6h更接近於卡前端面之部位。The power terminals 6d and 6f, to which the power supply (VDD) and the ground potential (VSS) are respectively assigned to the external terminals 6, are exposed to the signal terminals 6a to 6c, 6e, 6g, and 6h of the signal to be distributed, closer to the card front end surface. The part.
於microSD記憶卡10之前端部(卡前端面附近)設有錐形部7,作為用以連接器接腳導向形成有外部端子6之底面側的引導面。錐形部7係以跨卡前端面與底面、越靠近卡前端面側則卡厚度越薄的方式形成。再者,此處雖以具備錐形面作為引導面之構成為例,但亦可設為R面等曲面代替錐形面而作為引導面。A tapered portion 7 is provided at a front end portion (near the card front end surface) of the microSD memory card 10 as a guide surface for guiding the connector pin to the bottom surface side where the external terminal 6 is formed. The tapered portion 7 is formed such that the thickness of the card becomes thinner as it is closer to the front end surface and the bottom surface of the card and closer to the front end surface side of the card. Here, the configuration in which the tapered surface is provided as the guide surface is exemplified, but a curved surface such as an R surface may be used as the guide surface instead of the tapered surface.
圖2係顯示第1實施形態之microSD記憶卡10之製造所使用之引線架1的構成的圖。圖2中之虛線係表示於樹脂密封後切出作為microSD記憶卡10之範圍,引線架1係在虛線橫截之部份被切斷。引線架1包含:晶片安裝部1a,其係作為供安裝NAND2或被動零件3等電子零件之記憶體搭載部;及端子部1b,其係於樹脂密封後露出作為外部端子6。端子部1b係藉由連接部1c而被連結並支持於框部1d。引線架1可用42合金(Fe-Ni)或Cu等金屬材料形成,但並不限定於該等材料。又,成為各個外部端子6的引線架1係以絕緣膠帶12固定。Fig. 2 is a view showing the configuration of the lead frame 1 used for the manufacture of the microSD memory card 10 of the first embodiment. The broken line in Fig. 2 indicates that the range of the microSD memory card 10 is cut out after the resin is sealed, and the lead frame 1 is cut at the portion of the broken line in the broken line. The lead frame 1 includes a wafer mounting portion 1a as a memory mounting portion for mounting electronic components such as the NAND 2 or the passive component 3, and a terminal portion 1b which is exposed to the resin and exposed as an external terminal 6. The terminal portion 1b is coupled to and supported by the frame portion 1d by the connecting portion 1c. The lead frame 1 may be formed of a metal material such as 42 alloy (Fe-Ni) or Cu, but is not limited to these materials. Moreover, the lead frame 1 which becomes each external terminal 6 is fixed by the insulating tape 12.
連接部1c之構造包含:於microSD記憶卡10完成後,自端子部1b朝與向連接器插入方向的方向(卡前端面側)交叉之方向(卡側面側)突出之部份(突出部1g);及較端子部1b更為窄幅且自該部份朝卡前端面側延伸到達卡前端部之部份(延伸部1h)。又,連接部1c與外框聯絡部1i連接。外框聯絡部1i之寬度較連接部1c之寬度更寬。藉由該外框聯絡部1i,可安定地固定外部端子1b與外框1d。故,如圖1-2所示,於連接部1c之在卡完成後被切出作為microSD記憶卡10之部份,不在使端子部1b往卡前端面側延長之區域內。因此,如圖1-1所示,使用引線架1製成之microSD記憶卡10中,於利用密封樹脂8樹脂密封後被切斷之連接部1c的切斷面11(11a~11h),係在自將外部端子6a~6h向卡前端面側延長之區域(以下有時稱作「外部端子延長區域」)偏向橫向(卡前端面之長度方向)之區域露出。又,切斷面11a~11h係對應於外部端子6a~6h之各連接部1c之切斷面。另,此處顯示連接部1c朝與向連接器插入方向正交之方向突出之構成,然而連接部1c突出之方向與向連接器之插入方向所成的角度未必一定要為直角。再者,外框聯絡部1i亦可不存在於外部端子延長區域。The structure of the connection portion 1c includes a portion protruding from the terminal portion 1b in a direction intersecting the direction in which the connector is inserted (the card front end side) (the card side surface side) after the microSD memory card 10 is completed (the projection 1g) And a portion (extension portion 1h) that is narrower than the terminal portion 1b and extends from the portion toward the front end surface side of the card to the front end portion of the card. Moreover, the connection part 1c is connected to the outer frame communication part 1i. The width of the outer frame contact portion 1i is wider than the width of the connecting portion 1c. The external terminal 1b and the outer frame 1d can be stably fixed by the outer frame communication portion 1i. Therefore, as shown in FIG. 1-2, the portion of the connecting portion 1c which is cut out as the microSD memory card 10 after the completion of the card is not in the region where the terminal portion 1b is extended toward the card front end side. Therefore, as shown in FIG. 1-1, in the microSD memory card 10 manufactured using the lead frame 1, the cut surface 11 (11a to 11h) of the connecting portion 1c which is cut by the sealing resin 8 resin is cut. A region extending from the external terminals 6a to 6h toward the card distal end surface side (hereinafter sometimes referred to as "external terminal extension region") is exposed in a lateral direction (the longitudinal direction of the card distal end surface). Further, the cut surfaces 11a to 11h correspond to the cut surfaces of the respective connection portions 1c of the external terminals 6a to 6h. Further, here, the connection portion 1c is configured to protrude in a direction orthogonal to the direction in which the connector is inserted. However, the direction in which the connection portion 1c protrudes and the angle to which the connector is inserted are not necessarily at right angles. Furthermore, the outer frame contact portion 1i may not exist in the external terminal extension region.
圖3係顯示第1實施形態之microSD記憶卡10之製造所使用之引線架1之樹脂密封後的狀態的圖。此處為說明之簡單化,省略業已安裝至引線架1之NAND2或被動零件3、控制器4、接合導線5等之圖示。又,關於密封樹脂8雖僅顯示切出作為microSD記憶卡10之部份,但實際上,密封樹脂8係被塑製於較microSD記憶卡10之外形(以圖2之虛線包圍之部份)更寬之範圍中。端子部1b於樹脂密封時係與未圖示之模具密著,以免密封樹脂8流入端子部1b之底面側。於連接部1c之切出作為microSD記憶卡10之範圍內(延伸部1h)設置有彎曲部1e,且引線架1之框部1d係配置成為與樹脂密封時所用之模具之分割線大致相等之高度。FIG. 3 is a view showing a state in which the lead frame 1 used in the manufacture of the microSD memory card 10 of the first embodiment is sealed with a resin. Here, for simplification of the description, illustration of the NAND2 or passive component 3, the controller 4, the bonding wires 5, and the like which have been mounted to the lead frame 1 is omitted. Further, although the sealing resin 8 is only shown as being cut out as a part of the microSD memory card 10, in reality, the sealing resin 8 is molded in a shape other than the microSD memory card 10 (the portion surrounded by a broken line in Fig. 2). In a wider range. When the terminal portion 1b is resin-sealed, it is adhered to a mold (not shown) so that the sealing resin 8 does not flow into the bottom surface side of the terminal portion 1b. The bent portion 1e is provided in the range in which the connecting portion 1c is cut out as the microSD memory card 10 (the extending portion 1h), and the frame portion 1d of the lead frame 1 is disposed substantially equal to the dividing line of the mold used for sealing the resin. height.
於樹脂密封後,依照作為microSD記憶卡10之外形形狀而切斷連接部1c,使端子部1b與框部1d分離。此處說明將密封樹脂8模製於較作為microSD記憶卡10之外形形狀更大的範圍內,且沿著microSD記憶卡10之外形形狀切斷密封樹脂8及連接部1c而切出microSD記憶卡10之方法。但,亦可為使用配合作為microSD記憶卡10之外形形狀的模具將密封樹脂8模製(僅於以圖2之虛線包圍之部份模製密封樹脂8)而僅切斷連接部1c之方法。連接部1c由於係於切出作為microSD記憶卡10之部份設有彎曲部1e,故會進入密封樹脂8中。因此,如圖1-1或圖1-3所示,連接部1c之各切斷面11係露出於錐形部7之上端(卡上面側之錐形部7的端部)附近。由於連接部1c係由密封樹脂8覆蓋,故可防止連接部1c自切斷面11上捲。藉此,可抑制上捲之連接部1c與鄰接之外部端子6接觸而發生短路等不良狀況。After the resin is sealed, the connecting portion 1c is cut in accordance with the shape other than the microSD memory card 10, and the terminal portion 1b is separated from the frame portion 1d. Here, the sealing resin 8 is molded in a range larger than the shape of the microSD memory card 10, and the sealing resin 8 and the connecting portion 1c are cut along the outer shape of the microSD memory card 10 to cut out the microSD memory card. 10 method. However, it is also possible to mold the sealing resin 8 (only a part of the molding sealing resin 8 surrounded by a broken line in FIG. 2) and to cut only the connecting portion 1c by using a mold which is a shape other than the shape of the microSD memory card 10. . Since the connecting portion 1c is provided with a bent portion 1e which is cut out as a portion of the microSD memory card 10, it enters the sealing resin 8. Therefore, as shown in FIG. 1-1 or FIG. 1-3, each of the cut surfaces 11 of the connecting portion 1c is exposed in the vicinity of the upper end of the tapered portion 7 (the end portion of the tapered portion 7 on the card upper side). Since the connecting portion 1c is covered by the sealing resin 8, the connecting portion 1c can be prevented from being wound up from the cut surface 11. Thereby, it is possible to suppress a problem such as a short circuit such as a short circuit in which the connection portion 1c of the winding up is in contact with the adjacent external terminal 6.
再者,突出部1g係自端子部1b向側面方向延伸。因此,突出部1g與鄰接於突出部1g之端子部1b之間變得較為窄幅。又,突出部1g係自卡之底面露出。其結果,視密封樹脂8之材料而定,有時會發生密封樹脂8未進入突出部1g與鄰接於突出部1g之端子部1b之間之情形。又,於連接部1c中,在自彎曲部1e至卡前端部之距離較短,且自連接部1c之底面(卡之底面側之面)至卡底面之距離較短的情形下,會有進入連接部1c之底面側並凝固之密封樹脂8於卡完成後剝離的可能性。故亦可以將端子部1b埋於密封樹脂8中之方式將其密封,之後再除去端子部1b之底面側的密封樹脂8而形成外部端子6。Further, the protruding portion 1g extends in the lateral direction from the terminal portion 1b. Therefore, the protruding portion 1g and the terminal portion 1b adjacent to the protruding portion 1g become narrower. Further, the protruding portion 1g is exposed from the bottom surface of the card. As a result, depending on the material of the sealing resin 8, the sealing resin 8 may not enter between the protruding portion 1g and the terminal portion 1b adjacent to the protruding portion 1g. Further, in the connecting portion 1c, the distance from the curved portion 1e to the front end portion of the card is short, and the distance from the bottom surface of the connecting portion 1c (the surface on the bottom surface side of the card) to the bottom surface of the card is short. The sealing resin 8 that has entered the bottom surface side of the connecting portion 1c and solidified is peeled off after the card is completed. Therefore, the terminal portion 1b may be sealed so as to be buried in the sealing resin 8, and then the sealing resin 8 on the bottom surface side of the terminal portion 1b may be removed to form the external terminal 6.
圖4係顯示使埋設於密封樹脂8之引線架1於事後露出之順序的步驟圖。首先,將較作為外部端子6而露出之大小更大地形成有端子部1b之引線架1,以埋沒於密封樹脂8中之方式加以樹脂密封(圖4(a))。繼而,配合作為外部端子6所露出之形狀,對密封樹脂8施行雷射圖案化,形成深達引線架1之槽9(圖4(b))。其後,以水刀或研磨之方式除去由槽9所包圍之區域的密封樹脂8,使端子部1b露出而形成外部端子6。如此只要是於密封樹脂8中埋設引線架1,且事後使端子部1b露出,則即使突出部1g與鄰接於突出部1g之端子部1b之間較為窄幅,但由於係以密封樹脂8埋沒突出部1g,故可將突出部1g與鄰接於突出部1g之端子部1b之間以密封樹脂8埋沒。又,可加厚連接部1c之底面與卡底面之間的密封樹脂8之厚度。其結果,可防止密封樹脂8之剝離。Fig. 4 is a view showing a procedure for exposing the lead frame 1 embedded in the sealing resin 8 to the subsequent exposure. First, the lead frame 1 in which the terminal portion 1b is formed to be larger than the external terminal 6 is formed, and is sealed with a resin so as to be buried in the sealing resin 8 (Fig. 4(a)). Then, in cooperation with the shape exposed as the external terminal 6, the sealing resin 8 is subjected to laser patterning to form a groove 9 deeper into the lead frame 1 (Fig. 4(b)). Thereafter, the sealing resin 8 in the region surrounded by the groove 9 is removed by a water knife or polishing, and the terminal portion 1b is exposed to form the external terminal 6. When the lead frame 1 is buried in the sealing resin 8 and the terminal portion 1b is exposed afterwards, even if the protruding portion 1g is narrower than the terminal portion 1b adjacent to the protruding portion 1g, the sealing resin 8 is buried. Since the protruding portion 1g is provided between the protruding portion 1g and the terminal portion 1b adjacent to the protruding portion 1g, the sealing resin 8 can be buried. Further, the thickness of the sealing resin 8 between the bottom surface of the connecting portion 1c and the bottom surface of the card can be made thick. As a result, peeling of the sealing resin 8 can be prevented.
圖5係模式性顯示於microSD記憶卡10讀寫資料之連接器20的內部之圖。圖6係模式性顯示microSD記憶卡10與連接器端子21之位置關係之圖。圖5(a)係顯示未插入microSD記憶卡10之狀態下之連接器20的剖面。由於microSD記憶卡10之連接部1c之構造包含:自端子部1b朝向卡側面側突出之突出部1g、及自該部份以較端子部1b更為窄幅之寬度向卡前端面側延伸的延伸部1h,故不會露出於外部端子6朝卡前端面側延伸之區域。即,各連接部1c之在卡前端部之露出位置(切斷面11之位置),係位於向連接器20插入時自抵接連接器接腳21之區域向卡前端面之長度方向偏離之區域。各連接部1c之在卡前端部的露出位置係連接器接腳21不抵接之位置。因此,當向連接器20插入時,即使microSD記憶卡10之前端部與連接器接腳21相接,該連接器接腳21仍不會接觸到連接部1c。即,連接器接腳21在與microSD記憶卡10之前端部抵接之時點(圖5(b)、圖6(a))未與NAND2電性連接,在沿錐形部7引導向底面側而與外部端子6抵接之時點(圖5(c)、圖6(b))係與NAND2電性連接。因此,露出至靠近卡前端面之部位之電源端子6d、6f係較信號端子6a~6c、6e、6g、6h更早與連接器接腳21抵接。FIG. 5 is a diagram schematically showing the inside of the connector 20 for reading and writing data of the microSD memory card 10. Fig. 6 is a view schematically showing the positional relationship between the microSD memory card 10 and the connector terminal 21. Fig. 5(a) shows a cross section of the connector 20 in a state in which the microSD memory card 10 is not inserted. The structure of the connecting portion 1c of the microSD memory card 10 includes a protruding portion 1g that protrudes from the terminal portion 1b toward the side surface of the card, and a portion that extends from the portion toward the front end side of the card with a narrower width than the terminal portion 1b. Since the extending portion 1h is not exposed to the region where the external terminal 6 extends toward the card front end surface side. That is, the exposed position of the distal end portion of the connecting portion 1c (the position of the cut surface 11) is located in the longitudinal direction of the card distal end surface from the region where the connector pin 21 is abutted when the connector 20 is inserted. region. The exposed position of each of the connecting portions 1c at the front end portion of the card is a position at which the connector pins 21 do not abut. Therefore, when the connector 20 is inserted, even if the front end of the microSD memory card 10 is in contact with the connector pin 21, the connector pin 21 does not come into contact with the connecting portion 1c. That is, the connector pin 21 is not electrically connected to the NAND 2 at the time of abutting against the front end of the microSD memory card 10 (Fig. 5 (b), Fig. 6 (a)), and is guided to the bottom surface side along the tapered portion 7. The point of contact with the external terminal 6 (Fig. 5 (c), Fig. 6 (b)) is electrically connected to the NAND 2. Therefore, the power supply terminals 6d and 6f exposed to the front end surface of the card are in contact with the connector pins 21 earlier than the signal terminals 6a to 6c, 6e, 6g, and 6h.
為保護半導體記憶卡之半導體記憶體中所存儲之資料,較佳為令電源(VDD)或GND用之外部端子較信號用之外部端子更早地與連接器接腳抵接。然而,先前之半導體記憶卡,於在朝連接器插入方向之前端附近排列外部端子之情形下,係以自端子部向朝連接器之插入方向之前端面側筆直延伸之方式設置連接部。即,連接部之切斷面係以使外部端子在朝前端面側延伸之區域排列之狀態露出。故,當向連接器插入時,存在信號用之連接部較電源或GND用之連接部更早地接觸到連接器接腳之可能性,從而有導致半導體記憶體內的資料損毀之虞。In order to protect the data stored in the semiconductor memory of the semiconductor memory card, it is preferable that the external terminal for the power supply (VDD) or GND abuts the connector pin earlier than the external terminal for the signal. However, in the case of arranging the external terminals in the vicinity of the front end in the direction in which the connector is inserted, the conventional semiconductor memory card is provided with the connecting portion so as to extend straight from the terminal portion toward the front end side in the insertion direction of the connector. In other words, the cut surface of the connecting portion is exposed in a state in which the external terminals are arranged in a region extending toward the front end surface side. Therefore, when the connector is inserted, there is a possibility that the connection portion for the signal contacts the connector pin earlier than the connection portion for the power source or the GND, and the data is destroyed in the semiconductor memory.
如此,本實施形態之microSD記憶卡10於插入於連接器20時,電源端子6d、6f會先與連接器接腳21接觸,而信號端子6a~6c、6e、6g、6h將之後與連接器接腳21接觸。因此,可防止存儲於NAND2的資料遭受損毀。As described above, when the microSD memory card 10 of the present embodiment is inserted into the connector 20, the power terminals 6d and 6f are first brought into contact with the connector pins 21, and the signal terminals 6a to 6c, 6e, 6g, and 6h are connected to the connector. The pin 21 is in contact. Therefore, the data stored in the NAND 2 can be prevented from being damaged.
又,存在於連接器20之卡側端部22中配置有判斷是否插入了microSD記憶卡10之開關23及端子24之情形。此處有如下方式:令microSD記憶卡10之最前端部(前端面13)壓下開關23,使開關23與配置於連接器20之卡側端部22中之端子24接觸時,發出檢測信號。此處,若自最前端部露出連接部1c,則存在開關23與連接部1c相接觸而導致誤檢測之情況。另一方面,藉由使連接部1c之端部自錐形部7露出,則不存在連接部1c與開關接觸之情況。故,可防止誤檢測。Further, a case where the switch 23 and the terminal 24 of the microSD memory card 10 are inserted or not are disposed in the card-side end portion 22 of the connector 20. Here, there is a method in which the front end portion (front end surface 13) of the microSD memory card 10 is pressed against the switch 23, and the switch 23 is caused to emit a detection signal when it is in contact with the terminal 24 disposed in the card-side end portion 22 of the connector 20. . Here, when the connection portion 1c is exposed from the most distal end portion, there is a case where the switch 23 comes into contact with the connection portion 1c to cause erroneous detection. On the other hand, when the end portion of the connecting portion 1c is exposed from the tapered portion 7, there is no case where the connecting portion 1c comes into contact with the switch. Therefore, false detection can be prevented.
作為第2實施形態的半導體記憶卡之microSD記憶卡,與第1實施形態相同,具有以接合導線連接安裝於引線架之NAND或被動零件、及安裝於NAND上之重配線層的控制器,再以樹脂予以密封之構成。故,以下僅說明其與第1實施形態之不同點。As a microSD memory card of the semiconductor memory card according to the second embodiment, as in the first embodiment, the NAND or passive component mounted on the lead frame and the rewiring layer mounted on the NAND are connected by a bonding wire, and then It is sealed with a resin. Therefore, only differences from the first embodiment will be described below.
圖7係第2實施形態之microSD記憶卡10的仰視圖。本實施形態中,未由密封樹脂8密封連接部1c,而是保持露出於底面之狀態到達至卡前端部,此點係與第1實施形態不同。連接部1c係與端子部1b(外部端子6)配設於大致同一面,故連接部1c及其切斷面11係露出於錐形部7之下端(卡底面側之錐形部7之端部)。Fig. 7 is a bottom view of the microSD memory card 10 of the second embodiment. In the present embodiment, the sealing portion 8 is not sealed by the sealing resin 8 but is held in the state of the bottom surface and reaches the front end portion of the card. This point is different from that of the first embodiment. Since the connecting portion 1c is disposed on substantially the same surface as the terminal portion 1b (the external terminal 6), the connecting portion 1c and the cut surface 11 thereof are exposed at the lower end of the tapered portion 7 (the end of the tapered portion 7 on the bottom side of the card) unit).
圖8係顯示第2實施形態之microSD記憶卡10之製造所使用之引線架1之構成的圖。圖8中之虛線係顯示作為microSD記憶卡10而切出之範圍,引線架1係於以虛線橫截之部份切斷。與第1實施形態相同,引線架1包含:供安裝電子零件之作為記憶體搭載部之晶片安裝部1a;及於樹脂密封後作為外部端子6而露出之端子部1b。端子部1b係經由連接部1c及外框聯絡部1i而與框部1d連結。樹脂密封後,依照microSD記憶卡10之外形形狀而切斷連接部1c,使端子部1b與框部1d分離。Fig. 8 is a view showing the configuration of the lead frame 1 used in the manufacture of the microSD memory card 10 of the second embodiment. The broken line in Fig. 8 shows the range cut out as the microSD memory card 10, and the lead frame 1 is cut at a portion cross-hatched in a broken line. Similarly to the first embodiment, the lead frame 1 includes a wafer mounting portion 1a as a memory mounting portion for mounting electronic components, and a terminal portion 1b which is exposed as an external terminal 6 after resin sealing. The terminal portion 1b is coupled to the frame portion 1d via the connection portion 1c and the outer frame communication portion 1i. After the resin is sealed, the connecting portion 1c is cut in accordance with the outer shape of the microSD memory card 10, and the terminal portion 1b is separated from the frame portion 1d.
圖9係顯示第2實施形態之microSD記憶卡10之製造所使用之引線架1之樹脂密封後的狀態的圖。此處,為簡化說明,省略業已安裝於引線架1上之NAND或被動零件、控制器、接合導線等之圖示。又,關於密封樹脂8亦同,雖僅顯示作為microSD記憶卡10而切出之部份,但實際上,密封樹脂8係被模製於較microSD記憶卡10之外形(以圖8之虛線包圍之部份)更廣之範圍,密封樹脂8及連接部1c係沿microSD記憶卡10之外形形狀切斷,而切出microSD記憶卡10。在本實施形態中,彎曲部1e係設置於作為microSD記憶卡10而切出之範圍外(外框聯絡部1i)。藉由於框架寬度較寬之部份設置彎曲部1e,使彎曲部1e之加工變得容易,且使引線架1之固定位置安定。其結果,在樹脂密封步驟中,可減小控制器4等自密封樹脂露出的可能性。FIG. 9 is a view showing a state in which the lead frame 1 used in the manufacture of the microSD memory card 10 of the second embodiment is sealed with a resin. Here, for simplification of the description, illustrations of NAND or passive parts, controllers, bonding wires, and the like that have been mounted on the lead frame 1 are omitted. Further, in the same manner as the sealing resin 8, although only the portion cut out as the microSD memory card 10 is shown, in actuality, the sealing resin 8 is molded in a shape other than the microSD memory card 10 (enclosed by the dotted line of Fig. 8). In a wider range, the sealing resin 8 and the connecting portion 1c are cut along the outer shape of the microSD memory card 10, and the microSD memory card 10 is cut out. In the present embodiment, the curved portion 1e is provided outside the range cut out by the microSD memory card 10 (outer frame communication portion 1i). By providing the curved portion 1e in a wide portion of the frame width, the processing of the curved portion 1e is facilitated, and the fixed position of the lead frame 1 is stabilized. As a result, in the resin sealing step, the possibility that the self-sealing resin such as the controller 4 is exposed can be reduced.
本實施形態之microSD記憶卡亦然,當向連接器插入時,電源端子先與連接器接腳接觸,其後信號端子與連接器接腳接觸。故,可防止存儲於NAND中之資料損毀。Also in the microSD memory card of the present embodiment, when the connector is inserted into the connector, the power terminal is first brought into contact with the connector pin, and thereafter the signal terminal is in contact with the connector pin. Therefore, the data stored in the NAND can be prevented from being damaged.
其他細節與第1實施形態相同,故不再重複說明。Other details are the same as those of the first embodiment, and thus the description thereof will not be repeated.
作為第3實施形態之半導體記憶卡之microSD記憶卡,係與第2實施形態之microSD記憶卡相同,具有以接合導線連接安裝於引線架之NAND或被動零件、及安裝於NAND上之重配線層之控制器,再以樹脂予以密封之構成。故,以下僅說明其與第2實施形態之不同點。The microSD memory card of the semiconductor memory card according to the third embodiment is similar to the microSD memory card of the second embodiment, and has a NAND or passive component attached to the lead frame by a bonding wire, and a redistribution layer mounted on the NAND. The controller is sealed with a resin. Therefore, only differences from the second embodiment will be described below.
圖10係顯示第3實施形態之microSD記憶卡10之製造所使用之引線架1之樹脂密封後的狀態的圖。此處為簡化說明,省略業已安裝至引線架1之NAND或被動零件、控制器、接合導線等之圖示。又,關於密封樹脂8亦同,雖僅顯示作為microSD記憶卡10而切出之部份,但實際上,密封樹脂8係被模製於較microSD記憶卡10之外形更廣之範圍,密封樹脂8及連接部1c係沿microSD記憶卡10之外形形狀切斷,而切出microSD記憶卡10。圖11係第3實施形態之microSD記憶卡10的前端部份之放大圖。與第2實施形態同樣,彎曲部1e係設置於外框聯絡部1i中。但,本實施形態中,在端子部1b與彎曲部1e之間,具備對連接部1c實施半蝕刻使其薄化而成之半蝕刻部1f。即,連接部1c之於卡前端部之露出位置與端子部1b之間的部份,係由半蝕刻部1f而薄化。半蝕刻部1f之底面側有密封樹脂8進入,故半蝕刻部1f不露出於microSD記憶卡10之底面。故,連接部1c之切斷面11係露出於較錐形部7之下端更靠上側之部位。FIG. 10 is a view showing a state in which the lead frame 1 used in the manufacture of the microSD memory card 10 of the third embodiment is sealed with a resin. Here, for simplification of the description, illustrations of NAND or passive parts, controllers, bonding wires, and the like that have been mounted to the lead frame 1 are omitted. Further, in the same manner as the sealing resin 8, although only the portion cut out as the microSD memory card 10 is shown, in actuality, the sealing resin 8 is molded over a wider range than the microSD memory card 10, and the sealing resin is used. 8 and the connecting portion 1c are cut along the outer shape of the microSD memory card 10, and the microSD memory card 10 is cut out. Fig. 11 is an enlarged view showing a front end portion of the microSD memory card 10 of the third embodiment. Similarly to the second embodiment, the curved portion 1e is provided in the outer frame communication portion 1i. In the present embodiment, the half-etched portion 1f in which the connecting portion 1c is half-etched and thinned is provided between the terminal portion 1b and the curved portion 1e. In other words, the portion of the connecting portion 1c between the exposed position of the card front end portion and the terminal portion 1b is thinned by the half etching portion 1f. Since the sealing resin 8 enters on the bottom surface side of the half etching portion 1f, the half etching portion 1f is not exposed on the bottom surface of the microSD memory card 10. Therefore, the cut surface 11 of the connecting portion 1c is exposed at a portion above the lower end of the tapered portion 7.
本實施形態中,由於半蝕刻部1f係由密封樹脂8覆蓋,故可防止連接部1c自切斷面11上捲。藉此,可抑制上捲之連接部1c與鄰接之外部端子相接觸而發生短路等不良狀況。In the present embodiment, since the half etching portion 1f is covered with the sealing resin 8, it is possible to prevent the connecting portion 1c from being wound up from the cut surface 11. Thereby, it is possible to suppress a problem such as a short circuit such as a short circuit in which the connection portion 1c of the roll is brought into contact with an adjacent external terminal.
又,藉由亦於突出部1g設置半蝕刻部1f,即使突出部1g與突出部1g鄰接之端子部1b之間較為狹窄,仍可將突出部1g與突出部1g所鄰接之端子部1b之間以密封樹脂8填埋。Further, by providing the half etching portion 1f also in the protruding portion 1g, even if the protruding portion 1g and the terminal portion 1b adjacent to the protruding portion 1g are narrow, the protruding portion 1g and the terminal portion 1b adjacent to the protruding portion 1g can be provided. The seal resin 8 is used for filling.
本實施形態之microSD記憶卡亦然,當向連接器插入時,電源端子先與連接器接腳接觸,信號端子其後與連接器接腳接觸。因此,可防止存儲於NAND中之資料損毀。Also in the microSD memory card of the present embodiment, when the connector is inserted into the connector, the power terminal is first brought into contact with the connector pin, and the signal terminal is thereafter brought into contact with the connector pin. Therefore, the data stored in the NAND can be prevented from being damaged.
其他細節與第2實施形態相同,故不再重複說明。Other details are the same as those of the second embodiment, and therefore the description thereof will not be repeated.
作為第4實施形態之半導體記憶卡之microSD記憶卡,與第1實施形態之microSD記憶卡相同,具有以接合導線連接安裝於引線架之NAND或被動零件、及安裝於NAND上之重配線層的控制器,再以樹脂予以密封之構成。故,以下僅說明其與第1實施形態之不同點。Similarly to the microSD memory card of the first embodiment, the microSD memory card of the semiconductor memory card of the fourth embodiment has a NAND or passive component attached to the lead frame by a bonding wire, and a redistribution layer mounted on the NAND. The controller is sealed with a resin. Therefore, only differences from the first embodiment will be described below.
圖12係第4實施形態之microSD記憶卡10的仰視圖。於本實施形態中,與第1實施形態相同,連接部1c係進入密封樹脂8中。其中,進入密封樹脂8中之連接部1c係在與端子部1b大致同一面自密封樹脂8穿出,且連接部1c之切斷面11於錐形部7之下端部露出,此點係與第1實施形態不同。Fig. 12 is a bottom view of the microSD memory card 10 of the fourth embodiment. In the present embodiment, as in the first embodiment, the connecting portion 1c enters the sealing resin 8. The connecting portion 1c that has entered the sealing resin 8 is formed from the sealing resin 8 substantially flush with the terminal portion 1b, and the cut surface 11 of the connecting portion 1c is exposed at the lower end portion of the tapered portion 7, which is The first embodiment is different.
圖13係顯示第4實施形態之microSD記憶卡10之製造所使用之引線架1之構成的圖。圖13中之虛線係顯示作為microSD記憶卡10而切出之範圍,引線架1係於以虛線橫斷之部份切斷。引線架1包含:供安裝NAND或被動零件等之電子零件之作為記憶體搭載部的晶片安裝部1a;及於樹脂密封後作為外部端子6露出之端子部1b。端子部1b係經由連接部1c、及外框聯絡部1i而與框部1d連結。樹脂密封後,依照作為microSD記憶卡10之外形形狀而切斷連接部1c,使端子部1b與框部1d分離。Fig. 13 is a view showing the configuration of the lead frame 1 used in the manufacture of the microSD memory card 10 of the fourth embodiment. The broken line in Fig. 13 shows the range cut out as the microSD memory card 10, and the lead frame 1 is cut at a portion broken by a broken line. The lead frame 1 includes a wafer mounting portion 1a as a memory mounting portion for mounting electronic components such as NAND or passive parts, and a terminal portion 1b which is exposed as an external terminal 6 after resin sealing. The terminal portion 1b is coupled to the frame portion 1d via the connection portion 1c and the outer frame communication portion 1i. After the resin is sealed, the connecting portion 1c is cut in accordance with the shape of the microSD memory card 10, and the terminal portion 1b is separated from the frame portion 1d.
連接部1c之構造包含:於microSD記憶卡10完成後朝向卡側面側而自端子部1b突出之部份(突出部1g);及自該部份以較端子部1b更為窄幅之寬度朝卡前端面側延伸之部份(延伸部1h)。因此,作為連接部1c之microSD記憶卡10而切出之部份,不存在於使端子部1b朝卡前端面側延伸之區域。因此,如圖12所示,在本實施形態之microSD記憶卡10中,連接部1c之切斷面11未在使外部端子6朝卡前端面側延伸之區域中露出。The structure of the connecting portion 1c includes: a portion protruding from the terminal portion 1b toward the side surface of the card after the completion of the microSD memory card 10 (projecting portion 1g); and a width narrower from the portion than the terminal portion 1b A portion (extension portion 1h) on which the front end side of the card extends. Therefore, the portion cut out as the microSD memory card 10 of the connecting portion 1c does not exist in a region where the terminal portion 1b extends toward the card front end surface side. Therefore, as shown in FIG. 12, in the microSD memory card 10 of the present embodiment, the cut surface 11 of the connecting portion 1c is not exposed in a region where the external terminal 6 extends toward the card front end surface side.
圖14係顯示第4實施形態之microSD記憶卡10之製造所使用之引線架1的樹脂密封後的狀態之圖。此處為說明之簡單化,省略業已安裝至引線架1之NAND或被動零件、控制器、接合導線等之圖示。又,關於密封樹脂8雖僅顯示作為microSD記憶卡10而切出之部份,但實際上,密封樹脂8係被模製於較microSD記憶卡10之外形(以圖13之虛線包圍之部份)更廣之範圍,依照microSD記憶卡10之外形形狀而切斷密封樹脂8及連接部1c,切出microSD記憶卡10。連接部1c之作為microSD記憶卡10而切出之部份處,於2處設置有彎曲部1e。因此,如圖12所示,在連接部1c進入密封樹脂8中之後,在與端子部1b大致同一面上(錐形部7之下端部)自密封樹脂8穿出。彎曲部1e除了連接部1c外,外框聯絡部1i上亦有設置。即,彎曲部1e於端子部1b與框部1d之間設置有3處。其結果,引線架1之框部1d係配置成為與樹脂密封時所使用之模具之分割線大致相同之高度。又,設置於連接部1c之兩個彎曲部1e所夾之埋入區域1k亦位於與模具之分割線大致相同之高度。Fig. 14 is a view showing a state after resin sealing of the lead frame 1 used for the manufacture of the microSD memory card 10 of the fourth embodiment. Here, for simplification of the description, illustrations of NAND or passive parts, controllers, bonding wires, and the like that have been mounted to the lead frame 1 are omitted. Further, although the sealing resin 8 only shows a portion cut out as the microSD memory card 10, actually, the sealing resin 8 is molded to be outside the microSD memory card 10 (the portion surrounded by the dotted line of Fig. 13) In a wider range, the sealing resin 8 and the connecting portion 1c are cut in accordance with the shape of the microSD memory card 10, and the microSD memory card 10 is cut out. The portion of the connecting portion 1c which is cut out as the microSD memory card 10 is provided with a bent portion 1e at two places. Therefore, as shown in FIG. 12, after the connection portion 1c enters the sealing resin 8, it is passed through the sealing resin 8 on substantially the same surface as the terminal portion 1b (the lower end portion of the tapered portion 7). The curved portion 1e is provided in addition to the connecting portion 1c, and is also provided on the outer frame accommodating portion 1i. That is, the curved portion 1e is provided at three places between the terminal portion 1b and the frame portion 1d. As a result, the frame portion 1d of the lead frame 1 is disposed at substantially the same height as the dividing line of the mold used for sealing the resin. Moreover, the buried region 1k provided between the two curved portions 1e provided in the connecting portion 1c is also located at substantially the same height as the dividing line of the mold.
在本實施形態中,由於連接部1c中埋入區域1k係由密封樹脂8覆蓋,故可防止連接部1c自切斷面11上捲。藉此,可抑制上捲之連接部1c與鄰接之外部端子6接觸而發生短路等不良狀況。In the present embodiment, since the buried portion 1k is covered by the sealing resin 8 in the connecting portion 1c, the connecting portion 1c can be prevented from being wound up from the cut surface 11. Thereby, it is possible to suppress a problem such as a short circuit such as a short circuit in which the connection portion 1c of the winding up is in contact with the adjacent external terminal 6.
本實施形態之microSD記憶卡亦然,當向連接器插入時,電源端子先會與連接器接腳接觸,信號端子將之後與連接器接腳接觸。因此,可防止NAND所存儲的資料損毀。In the microSD memory card of this embodiment, when the connector is inserted into the connector, the power terminal is first brought into contact with the connector pin, and the signal terminal is then brought into contact with the connector pin. Therefore, the data stored in the NAND can be prevented from being destroyed.
關於其他細節,因與第1實施形態相同,故不再重複說明。The other details are the same as in the first embodiment, and thus the description thereof will not be repeated.
根據上述各實施形態,已將全部之外部端子的連接部包含自端子部朝卡側面側突出的部份、及自該部份以較端子部更為窄幅之寬度朝卡前端面方向彎曲延伸之部份的構造之情形作為一例進行了説明,但,也可為只有不包括電源端子或接地端子之信號端子之連接部,包含自端子部朝向卡側面側突出的部份、及自該部份以較端子部更為窄幅之寬度朝卡前端面側彎曲延伸之部份。圖15係顯示只有不包括電源端子及接地端子6d、6f之信號端子6a~6c、6e、6g、6h之連接部1c,包含自端子部1b朝向卡側面側突出之部份、及自該部份以較端子部1b更為窄幅之寬度朝卡前端面側彎曲延伸之部份的microSD記憶卡10之構成的圖。即,未於電源端子及接地端子之連接部1c中設置突出部1g。其係因為,只要僅使電源端子6d、6f之連接部1c之切斷面11d、11f在使外部端子6d、6f朝卡前端面側延伸之區域露出,即使在連接器接腳抵接於microSD記憶卡10之前端部之時點(圖5(b))與電源端子6d、6f之連接部1c之切斷面11d、11f接觸,仍不必擔心NAND之資料損毀。其結果,使電源端子及接地端子6d、6f,與鄰接於電源端子及接地端子6d、6f之端子間的寬度變廣。因此,可更容易地將電源端子及接地端子6d、6f,與鄰接於電源端子及接地端子6d、6f之端子間以密封樹脂8填埋。According to each of the above embodiments, the connection portion of all the external terminals includes a portion protruding from the terminal portion toward the card side surface side, and a portion extending from the portion toward the front end surface of the card at a narrower width than the terminal portion The configuration of the part of the structure has been described as an example. However, the connection portion including only the signal terminal of the power supply terminal or the ground terminal may include a portion protruding from the terminal portion toward the side surface of the card, and from the portion. The portion is bent to extend toward the front end side of the card at a width narrower than the terminal portion. Fig. 15 shows a connecting portion 1c including only the signal terminals 6a to 6c, 6e, 6g, and 6h of the power terminal and the ground terminals 6d and 6f, including the portion protruding from the terminal portion 1b toward the side surface of the card, and from the portion A portion of the microSD memory card 10 which is bent toward the front end surface side of the card at a narrower width than the terminal portion 1b. That is, the protruding portion 1g is not provided in the connecting portion 1c of the power supply terminal and the ground terminal. This is because only the cut surfaces 11d and 11f of the connection portions 1c of the power supply terminals 6d and 6f are exposed in the region where the external terminals 6d and 6f extend toward the card front end surface side, even when the connector pins abut against the microSD. At the time point of the front end portion of the memory card 10 (Fig. 5 (b)), it is in contact with the cut surfaces 11d, 11f of the connection portion 1c of the power supply terminals 6d, 6f, and there is no need to worry about data destruction of the NAND. As a result, the width between the power supply terminal and the ground terminals 6d and 6f and the terminals adjacent to the power supply terminal and the ground terminals 6d and 6f are widened. Therefore, it is possible to more easily fill the power supply terminal and the ground terminals 6d and 6f with the sealing resin 8 between the terminals adjacent to the power supply terminal and the ground terminals 6d and 6f.
又,上述各實施形態,雖以半導體記憶體上安裝有控制器之積層型之半導體記憶卡為例進行了說明,但不消說將控制器安裝於引線架上之平置型的半導體記憶卡亦能得到同樣之效果。圖16-1係作為平置型之半導體記憶卡的microSD記憶卡30之俯視透視圖,圖16-2係microSD記憶卡30之側面透視圖。再者,圖16-2係顯示自圖16-1之右側觀察microSD記憶卡10之狀態。就與圖1-1~圖1-3所示之積層型之microSD記憶卡10相同之構成要件係附註以相同之符號。引線架1之上除作為半導體記憶體之NAND2之外,亦安裝有控制器4,用以控制被動零件3(電容器或熔絲等)或NAND2之動作。如此之平置型microSD記憶卡30同樣能夠得到防止存儲於NAND2中之資料損毀之效果。Further, in each of the above embodiments, a semiconductor memory card having a laminated type in which a controller is mounted on a semiconductor memory has been described as an example, but a flat type semiconductor memory card in which a controller is mounted on a lead frame can be used. Get the same effect. 16-1 is a top perspective view of a microSD memory card 30 as a flat type semiconductor memory card, and Fig. 16-2 is a side perspective view of the microSD memory card 30. Further, Fig. 16-2 shows the state of the microSD memory card 10 as viewed from the right side of Fig. 16-1. The same constituent elements as those of the laminated microSD memory card 10 shown in FIGS. 1-1 to 1-3 are denoted by the same reference numerals. In addition to the NAND2 as a semiconductor memory, the lead frame 1 is also provided with a controller 4 for controlling the action of the passive component 3 (capacitor or fuse, etc.) or NAND2. Such a flat-type microSD memory card 30 can also obtain an effect of preventing data corruption in the NAND2.
再者,上述各實施形態中,雖以microSD記憶卡為例進行說明,但不局限於特定之規格,使外部端子排列於朝連接器之插入方向之前端附近之半導體記憶卡亦同樣可適用。Further, in the above embodiments, the microSD memory card has been described as an example. However, the semiconductor memory card in which the external terminal is arranged in the vicinity of the front end in the insertion direction of the connector is also applicable, without being limited to a specific specification.
以上雖說明了本發明之若干個實施形態,但該等實施形態僅係以例子提示,並不意味著限定發明之範圍。該等新穎之實施形態可以其他各種形態予以實施,在不脫離發明要旨之範圍內,可進行各種省略、替換、變更。該等實施形態或其變形係包含於發明之範圍及要旨內,且包含於申請專利範圍所記載之發明與其均等之範圍內。The embodiments of the present invention have been described above, but are not intended to limit the scope of the invention. The present invention may be embodied in various other forms and various modifications, substitutions and changes may be made without departing from the scope of the invention. The invention and its modifications are intended to be included within the scope and spirit of the invention, and are included in the scope of the invention described in the claims.
1...引線架1. . . Lead frame
1b...端子部1b. . . Terminal part
1c...連接部1c. . . Connection
1g...突出部1g. . . Protruding
1h...延伸部1h. . . Extension
1f...半蝕刻部1f. . . Half etching
2...NAND2. . . NAND
2a...配線2a. . . Wiring
3...被動零件3. . . Passive part
4...控制器4. . . Controller
5...接合導線5. . . Bonding wire
6...外部端子6. . . External terminal
8...密封樹脂8. . . Sealing resin
10...microSD記憶卡10. . . microSD memory card
12...絕緣膠帶12. . . Insulation Tape
20...連接器20. . . Connector
21...連接器接腳twenty one. . . Connector pin
圖1-1係第1實施形態之作為半導體記憶卡之microSD記憶卡的仰視圖;Figure 1-1 is a bottom view of a microSD memory card as a semiconductor memory card according to the first embodiment;
圖1-2係第1實施形態之microSD記憶卡的俯視透視圖;Figure 1-2 is a top perspective view of the microSD memory card of the first embodiment;
圖1-3係第1實施形態之microSD記憶卡的側面透視圖;1-3 is a side perspective view of the microSD memory card of the first embodiment;
圖2係顯示第1實施形態之microSD記憶卡之製造所使用之引線架的構成圖;2 is a view showing a configuration of a lead frame used for manufacturing a microSD memory card according to the first embodiment;
圖3係顯示第1實施形態之microSD記憶卡之製造所使用之引線架的樹脂密封後之狀態的圖;3 is a view showing a state after resin sealing of a lead frame used for manufacturing a microSD memory card according to the first embodiment;
圖4(a)-(c)係顯示埋設於密封樹脂中之引線架事後使其露出之順序的步驟圖;4(a)-(c) are process diagrams showing the order in which the lead frame embedded in the sealing resin is exposed afterwards;
圖5(a)-(c)係模式性顯示於microSD記憶卡讀寫資料之連接器之內部的圖;5(a)-(c) are diagrams schematically showing the inside of a connector for reading and writing data of a microSD memory card;
圖6(a)、(b)係模式性顯示microSD記憶卡與連接器端子之位置關係的圖;6(a) and 6(b) are diagrams schematically showing the positional relationship between the microSD memory card and the connector terminals;
圖7係顯示第2實施形態之microSD記憶卡的仰視圖;Figure 7 is a bottom plan view showing the microSD memory card of the second embodiment;
圖8係顯示第2實施形態之microSD記憶卡之製造所使用之引線架的構成圖;8 is a view showing a configuration of a lead frame used for manufacturing a microSD memory card according to a second embodiment;
圖9係顯示第2實施形態之microSD記憶卡之製造所使用之引線架之樹脂密封後的狀態的圖;FIG. 9 is a view showing a state in which the lead frame used in the manufacture of the microSD memory card of the second embodiment is sealed with a resin;
圖10係顯示第3實施形態之microSD記憶卡之製造所使用之引線架之樹脂密封後的狀態的圖;FIG. 10 is a view showing a state in which the lead frame used in the manufacture of the microSD memory card of the third embodiment is sealed with a resin;
圖11係第3實施形態之microSD記憶卡的前端部份之放大圖;Figure 11 is an enlarged view of a front end portion of a microSD memory card of a third embodiment;
圖12係第4實施形態之microSD記憶卡的仰視圖;Figure 12 is a bottom plan view of the microSD memory card of the fourth embodiment;
圖13係顯示第4實施形態之microSD記憶卡之製造所使用之引線架的構成圖;Figure 13 is a view showing the configuration of a lead frame used in the manufacture of the microSD memory card of the fourth embodiment;
圖14係顯示第4實施形態之microSD記憶卡之製造所使用之引線架的樹脂密封後之狀態的圖;Fig. 14 is a view showing a state after resin sealing of a lead frame used in the manufacture of the microSD memory card of the fourth embodiment;
圖15係顯示具有僅有信號端子之連接部自端子部朝向卡側面側突出之部份、與較端子部更為窄幅且朝卡前端面側延伸而達至卡前端部之部份的microSD記憶卡之構成圖;Fig. 15 is a view showing a portion in which a connecting portion having only a signal terminal protrudes from the terminal portion toward the side surface of the card, and a portion which is narrower than the terminal portion and extends toward the front end side of the card to reach a portion of the front end portion of the card. The composition of the memory card;
圖16-1係作為平置型之半導體記憶卡的microSD記憶卡之俯視透視圖;及Figure 16-1 is a top perspective view of a microSD memory card as a flat type semiconductor memory card;
圖16-2係平置型之microSD記憶卡之側面透視圖。Figure 16-2 is a side perspective view of a flat-type microSD memory card.
1...引線架1. . . Lead frame
1b...端子部1b. . . Terminal part
1c...連接部1c. . . Connection
1g...突出部1g. . . Protruding
1h...延伸部1h. . . Extension
2...NAND2. . . NAND
2a...配線2a. . . Wiring
3...被動零件3. . . Passive part
4...控制器4. . . Controller
5...接合導線5. . . Bonding wire
6...外部端子6. . . External terminal
8...密封樹脂8. . . Sealing resin
10...microSD記憶卡10. . . microSD memory card
12...絕緣膠帶12. . . Insulation Tape
Claims (9)
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