TWI599024B - Image sensor and method for fabricating the same - Google Patents
Image sensor and method for fabricating the same Download PDFInfo
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本發明是關於一種影像感測元件的製作方法,尤指一種利用微透鏡的圖案化光罩來形成彩色濾光片的製作方法。The present invention relates to a method of fabricating an image sensing element, and more particularly to a method of fabricating a color filter using a patterned mask of a microlens.
隨著數位相機、掃瞄器等電子商品不斷的開發與成長,消費市場對影像感測元件之需求亦持續的增加。一般而言,目前常用的影像感測元件,包括了電荷耦合感測元件(charge coupled device,CCD sensor)以及CMOS影像感測元件(CMOS image sensor,CIS)兩大類。其中,由於CMOS影像感測元件具有低操作電壓、低功率消耗與高操作效率、可根據需要進行隨機存取(random access)等因素,並且可以整合於目前的半導體技術來大量製造,因此受到極廣泛的應用。With the continuous development and growth of electronic products such as digital cameras and scanners, the demand for image sensing components in the consumer market has continued to increase. In general, commonly used image sensing components include a charge coupled device (CCD sensor) and a CMOS image sensor (CIS). Among them, since the CMOS image sensing element has low operating voltage, low power consumption and high operational efficiency, random access can be performed as needed, and can be integrated into current semiconductor technology to be mass-produced, A wide range of applications.
CMOS影像感測裝置之感光原理係將入射光線區分為各種不同波長光線的組合,再分別由半導體基底上之複數個感光元件(optically sensitive element)予以接收,並轉換為不同強弱之數位訊號。例如,將入射光區分為紅、藍、綠三色光線之組合,再由相對應之感光二極體(photodiode)予以接收,進而轉換為數位訊號。因此,於各光學感測元件上方必須形成一彩色濾光陣列以區分入射光線之波長。The sensitization principle of the CMOS image sensing device is to distinguish the incident light into a combination of light of different wavelengths, and then receive them by a plurality of photosensitive elements on the semiconductor substrate, and convert them into digital signals of different strengths and weaknesses. For example, the incident light is divided into a combination of three colors of red, blue, and green light, and then received by a corresponding photodiode, and then converted into a digital signal. Therefore, a color filter array must be formed over each optical sensing element to distinguish the wavelength of the incident light.
然而,習知在製作彩色濾光陣列時通常是直接將複數個彩色濾光片設置於一保護層表面,然後再依序覆蓋平坦層及形成複數個對應彩色濾光片的微透鏡。由於彩色濾光片是製作於保護層上,此設計不但增加光線投射至半導體基底中感光元件的路徑,又容易造成彩色濾光片的剝落(peeling),嚴重影響影像感測元件的效能與良率。However, it is conventional to form a color filter array by directly placing a plurality of color filters on a surface of a protective layer, and then sequentially covering the flat layer and forming a plurality of microlenses corresponding to the color filters. Since the color filter is fabricated on the protective layer, the design not only increases the path of light projection onto the photosensitive element in the semiconductor substrate, but also easily causes peeling of the color filter, which seriously affects the performance and goodness of the image sensing element. rate.
因此本發明是揭露一種製作影像感測元件的方法,以解決上述習知問題。Therefore, the present invention is directed to a method of fabricating an image sensing element to solve the above-mentioned conventional problems.
本發明較佳實施例是揭露一種製作影像感測元件之方法,包含有下列步驟:提供一基底,該基底中包含複數個感光二極體;形成至少一介電層與一保護層於該基底表面;利用一圖案化光罩進行一第一圖案轉移製程,以形成複數個對應各該感光二極體的凹槽(trench)於該保護層中;形成複數個彩色濾光片於該等凹槽內;覆蓋一平坦層於該等彩色濾光片上;以及利用該圖案化光罩進行一第二圖案轉移製程,以形成複數個微透鏡於該平坦層上並對應各該彩色濾光片。A preferred embodiment of the invention discloses a method of fabricating an image sensing device, comprising the steps of: providing a substrate comprising a plurality of photosensitive diodes; forming at least one dielectric layer and a protective layer on the substrate a first pattern transfer process using a patterned mask to form a plurality of trenches corresponding to the respective photodiodes in the protective layer; forming a plurality of color filters in the recesses a planar layer is disposed on the color filters; and a second pattern transfer process is performed by the patterned mask to form a plurality of microlenses on the flat layer and corresponding to the color filters .
本發明另一實施例是揭露一種製作影像感測元件之方法,包含有下列步驟:提供一基底,該基底中包含複數個感光二極體;形成至少一介電層與一保護層於該基底表面;利用一圖案化光罩進行一第一圖案轉移製程,以形成複數個凹槽於該保護層中;填入一遮光材料於該等凹槽中,以形成複數個圖案化遮光層;形成複數個彩色濾光片於該等圖案化遮光層及該保護層表面;覆蓋一平坦層於該等彩色濾光片上;以及利用該圖案化光罩進行一第二圖案轉移製程,以形成複數個微透鏡於該平坦層上並對應各該彩色濾光片。Another embodiment of the present invention discloses a method of fabricating an image sensing device, comprising the steps of: providing a substrate comprising a plurality of photodiodes; forming at least one dielectric layer and a protective layer on the substrate a first pattern transfer process is performed by using a patterned mask to form a plurality of grooves in the protective layer; a light shielding material is filled in the grooves to form a plurality of patterned light shielding layers; a plurality of color filters are disposed on the surface of the patterned light shielding layer and the protective layer; covering a flat layer on the color filters; and performing a second pattern transfer process by using the patterned mask to form a plurality of color filters A microlens is on the flat layer and corresponds to each of the color filters.
本發明另一實施例是揭露一種影像感測元件,包含:一基底;複數個感光二極體,設置於基底中;至少一介電層,覆蓋於基底與感光二極體上;一保護層,設置於介電層表面;複數個圖案化遮光層,設於保護層中;複數個彩色濾光片,設於保護層表面及各該圖案化遮光層表面;一平坦層設於彩色濾光片上;以及複數個微透鏡設置於平坦層表面並對應各彩色濾光片,且各微透鏡不重疊各圖案化遮光層。Another embodiment of the invention discloses an image sensing device, comprising: a substrate; a plurality of photosensitive diodes disposed in the substrate; at least one dielectric layer covering the substrate and the photosensitive diode; and a protective layer Provided on the surface of the dielectric layer; a plurality of patterned light shielding layers disposed in the protective layer; a plurality of color filters disposed on the surface of the protective layer and the surface of each of the patterned light shielding layers; a flat layer disposed on the color filter And a plurality of microlenses are disposed on the surface of the flat layer and correspond to the respective color filters, and each of the microlenses does not overlap the patterned light shielding layers.
請參照第1圖至第2圖,第1圖至第2圖為本發明第一實施例製作一影像感測元件之示意圖。如圖中所示,首先提供一基底12,例如一矽基底,且基底12上定義有一感測器陣列區(sensor array region)14。然後於基底12中形成複數個用來收集光線的感光二極體(photodiode)16、複數個互補型金氧半導體(CMOS)電晶體(圖未示)以及複數個淺溝隔離(shallow trench isolation,STI)18環繞於各感光二極體16周圍。Please refer to FIG. 1 to FIG. 2 . FIG. 1 to FIG. 2 are schematic diagrams showing an image sensing element according to a first embodiment of the present invention. As shown in the figure, a substrate 12, such as a germanium substrate, is first provided, and a sensor array region 14 is defined on the substrate 12. Then, a plurality of photodiodes 16 for collecting light, a plurality of complementary metal oxide semiconductor (CMOS) transistors (not shown), and a plurality of shallow trench isolations are formed in the substrate 12. STI) 18 surrounds each of the photosensitive diodes 16.
接著先沈積一層間介電層(interlayer dielectric layer)20於基底上12並覆蓋CMOS電晶體及各感光二極體16,然後進行所需之金屬內連線製程,亦即依序沈積複數個介電層22/24/26於層間介電層20上,並分別形成複數個圖案化的金屬層28/30/32於各介電層22/24/26中,用來構成影像感測元件的金屬內連線並增加散射光線的阻擋效果。本實施例雖以層間介電層20上沈積三層介電層22/24/26為例,但介電層22/24/26及圖案化金屬層28/30/32的數量可視產品的需求任意調整,並不侷限於此。Then, an interlayer dielectric layer 20 is deposited on the substrate 12 and covers the CMOS transistor and the photodiode 16, and then the desired metal interconnection process is performed, that is, a plurality of dielectric layers are sequentially deposited. The electrical layer 22/24/26 is disposed on the interlayer dielectric layer 20, and a plurality of patterned metal layers 28/30/32 are formed in each of the dielectric layers 22/24/26 to form an image sensing element. Metal interconnects and increase the blocking effect of scattered light. In this embodiment, although three dielectric layers 22/24/26 are deposited on the interlayer dielectric layer 20, the number of the dielectric layers 22/24/26 and the patterned metal layer 28/30/32 can be regarded as the product requirements. Any adjustment is not limited to this.
接著沈積一由氮化矽或氧化矽等材料所構成的保護層(passivation layer)34於最上層的介電層26表面。然後進行一圖案轉移製程,例如先提供一圖案化光罩36,並將此圖案化光罩36的圖案對準基底12上之一對準記號(圖未示)以轉移至一負型圖案化光阻層38。隨後利用此負型圖案化光阻層38當作遮罩對保護層34與介電層26進行一蝕刻製程,以於保護層34及部分介電層26中分別形成複數個對應於各感光二極體16的凹槽40/42/44。A passivation layer 34 of a material such as tantalum nitride or hafnium oxide is deposited on the surface of the uppermost dielectric layer 26. Then, a pattern transfer process is performed, for example, a patterned mask 36 is first provided, and the pattern of the patterned mask 36 is aligned with an alignment mark (not shown) on the substrate 12 to be transferred to a negative pattern. Photoresist layer 38. Then, the negative patterned photoresist layer 38 is used as a mask to perform an etching process on the protective layer 34 and the dielectric layer 26, so as to form a plurality of corresponding layers in the protective layer 34 and the partial dielectric layer 26 respectively. The groove 16/42/44 of the pole body 16.
接著如第2圖所示,去除圖案化光阻層38,並依序形成複數個彩色濾光片46/48/50於凹槽40/42/44內並覆蓋部分保護層34表面。舉例來說,可先以填入一藍色濾光材料(圖未示)於凹槽40/42/44及保護層34上,然後再以曝光顯影製程於凹槽40內形成一藍色濾光片46並同時去除凹槽42/44內的藍色濾光材料。接著以綠色及紅色濾光材料重複進行上述曝光顯影製程,以於凹槽42中形成一綠色濾光片48以及於凹槽44中形成一紅色濾光片50。需注意的是,本實施例雖以藍色、綠色及紅色等三種顏色的濾光片為例,但彩色濾光片的顏色與組合型式不侷限於此,又可選自青綠色(cyan)濾光片、洋紅色(magenta)濾光片、及黃色(yellow)濾光片等,或製備成三種以上之彩色濾光片的顏色組合。Next, as shown in FIG. 2, the patterned photoresist layer 38 is removed, and a plurality of color filters 46/48/50 are sequentially formed in the grooves 40/42/44 and cover the surface of the portion of the protective layer 34. For example, a blue filter material (not shown) may be first filled in the recess 40/42/44 and the protective layer 34, and then a blue filter is formed in the recess 40 by an exposure and development process. The light sheet 46 simultaneously removes the blue filter material within the recess 42/44. The exposure and development process is then repeated with the green and red filter materials to form a green filter 48 in the recess 42 and a red filter 50 in the recess 44. It should be noted that, in this embodiment, although the filters of three colors, such as blue, green, and red, are taken as an example, the color and combination of the color filters are not limited thereto, and may be selected from cyan. A filter, a magenta filter, a yellow filter, or the like, or a color combination of three or more color filters.
然後形成一平坦層52並覆蓋藍色濾光片46、綠色濾光片48及紅色濾光片50表面,並接著於平坦層52上方相對應各濾光片之處形成複數個微透鏡54/56/58。形成微透鏡的方式可先形成一由壓克力材料(acrylate material)構成的聚合物層(未顯示)於平坦層52表面,然後利用先前形成凹槽40/42/44的同一個圖案化光罩36以及同一對準記號對聚合物層進行一曝光及顯影製程,並搭配進行一熱回流(reflow)製程,以於相對藍色濾光片46、綠色濾光片48及紅色濾光片50的平坦層52上形成複數個微透鏡54/56/58。Then, a flat layer 52 is formed and covers the surfaces of the blue filter 46, the green filter 48, and the red filter 50, and then a plurality of microlenses 54/ are formed corresponding to the respective filters above the flat layer 52. 56/58. The microlens can be formed by first forming a polymer layer (not shown) composed of an acrylate material on the surface of the flat layer 52, and then using the same patterned light that previously formed the grooves 40/42/44. The cover 36 and the same alignment mark perform an exposure and development process on the polymer layer, and are combined with a reflow process for the relative blue filter 46, the green filter 48, and the red filter 50. A plurality of microlenses 54/56/58 are formed on the flat layer 52.
值得注意的是,由於本發明在蝕刻用來形成彩色濾光片的凹槽40/42/44及後續形成微透鏡54/56/58時是採用同一個圖案化光罩以及同一對準記號,因此完成微透鏡54/56/58的製作時將各微透鏡54/56/58自動對準各濾光片46/48/50。此外,本實施例是先於保護層及部分介電層內形成複數個凹槽後再填入各濾光片於凹槽中,除了可縮短光線到達感光二極體的路徑,又可同時解決習知將彩色濾光片製作於保護層表面所導致的剝落問題。It should be noted that since the present invention uses the same patterned mask and the same alignment mark when etching the grooves 40/42/44 for forming the color filter and subsequently forming the microlenses 54/56/58, Thus, each microlens 54/56/58 is automatically aligned with each of the filters 46/48/50 when the fabrication of the microlenses 54/56/58 is completed. In addition, in this embodiment, a plurality of grooves are formed in the protective layer and a portion of the dielectric layer, and then the filters are filled in the grooves. In addition to shortening the path of the light reaching the photosensitive diode, the solution can be simultaneously solved. The problem of peeling caused by the color filter being formed on the surface of the protective layer is conventionally known.
另外需注意的是,上述第2圖所揭露的實施例是針對設於感測器陣列區14之中央區域的各感光元件結構,但不侷限於此,上述製程又可搭配微透鏡的程式移轉(program shift)而套用至感測器陣列區的邊緣區域。如第3圖所示,本發明可將上述於保護層中形成凹槽並填入彩色濾光片的製程套用至晶粒上感測器陣列區14的中央區域110及邊緣區域112。在大部分情況下,由於光線的偏移,邊緣區域112的微透鏡通常會先經過程式判斷後進行某種程度的移轉。如同前面實施例所述,本發明以蝕刻製程形成彩色濾光片的凹槽及後續形成微透鏡等兩個步驟均採用同一個圖案化光罩以及同一對準記號,因此在微透鏡54/56/58進行程式移轉時即對齊設於下方的彩色濾光片46/48/50,達到自動對準的效果。It should be noted that the embodiment disclosed in FIG. 2 is directed to the structure of each photosensitive element disposed in the central region of the sensor array region 14, but is not limited thereto, and the above process can be combined with the movement of the microlens. Program shift is applied to the edge region of the sensor array area. As shown in FIG. 3, the present invention can apply the above-described process of forming a recess in the protective layer and filling the color filter to the central region 110 and the edge region 112 of the on-die sensor array region 14. In most cases, due to the shifting of the light, the microlenses of the edge region 112 are usually first subjected to a certain degree of shift after being judged by the program. As described in the previous embodiment, the two steps of forming the color filter of the color filter in the etching process and subsequently forming the microlens use the same patterned mask and the same alignment mark, so that the microlens 54/56 /58 When the program is transferred, the color filter 46/48/50 set below is aligned to achieve the effect of automatic alignment.
請繼續參照第4圖至第5圖,第4圖至第5圖為本發明第二實施例製作一影像感測元件之示意圖。如圖中所示,首先提供一基底62,例如一矽基底,且基底62上定義有一感測器陣列區64。然後於基底62中形成複數個用來收集光線的感光二極體66、複數個互補型金氧半導體(CMOS)電晶體(圖未示)以及複數個淺溝隔離68環繞於感光二極體66周圍。Please refer to FIG. 4 to FIG. 5 . FIG. 4 to FIG. 5 are schematic diagrams showing an image sensing element according to a second embodiment of the present invention. As shown in the figure, a substrate 62, such as a germanium substrate, is first provided, and a sensor array region 64 is defined on the substrate 62. Then, a plurality of photodiodes 66 for collecting light, a plurality of complementary metal oxide semiconductor (CMOS) transistors (not shown), and a plurality of shallow trench isolations 68 are formed in the substrate 62 to surround the photodiode 66. around.
接著沈積一層間介電層(interlayer dielectric layer)70於基底上62並覆蓋CMOS電晶體及各感光二極體66,然後進行所需之金屬內連線製程,亦即依序沈積複數個介電層72/74於層間介電層70上,並分別形成複數個圖案化的金屬層78/80於各介電層72/74中,用來構成影像感測元件的金屬內連線並增加散射光線的阻擋效果。本實施例雖以層間介電層70上沈積兩層介電層72/74為例,但介電層72/74及圖案化金屬層78/80的數量可視產品的需求增加或減少,並不侷限於此。An interlevel dielectric layer 70 is then deposited on the substrate 62 and covers the CMOS transistor and the photodiode 66, and then the desired metal interconnect process is performed, that is, a plurality of dielectrics are sequentially deposited. Layers 72/74 are formed on the interlayer dielectric layer 70, and a plurality of patterned metal layers 78/80 are formed in each of the dielectric layers 72/74 to form a metal interconnection of the image sensing element and increase scattering. The blocking effect of light. In this embodiment, although two dielectric layers 72/74 are deposited on the interlayer dielectric layer 70, the number of the dielectric layers 72/74 and the patterned metal layer 78/80 may be increased or decreased according to the demand of the product, and Limited to this.
接著沈積一由氮化矽或氧化矽等材料所構成的保護層(passivation layer)84於最上層的介電層74表面。然後進行一圖案轉移製程,例如先提供一圖案化光罩86,並將此圖案化光罩86的圖案對準基底62上之一對準記號(圖未示)以轉移至一正型圖案化光阻層88。隨後利用此正型圖案化光阻層88當作遮罩對保護層84與介電層74進行一蝕刻製程,以於保護層84及部分介電層74中形成複數個不遮蔽各感光二極體66的凹槽90/92,例如分別對應環繞於各感光二極體66周圍的淺溝隔離68。A passivation layer 84 of a material such as tantalum nitride or hafnium oxide is deposited on the surface of the uppermost dielectric layer 74. Then, a pattern transfer process is performed, for example, a patterned mask 86 is first provided, and the pattern of the patterned mask 86 is aligned with an alignment mark (not shown) on the substrate 62 to be transferred to a positive pattern. Photoresist layer 88. Then, the positive-type patterned photoresist layer 88 is used as a mask to perform an etching process on the protective layer 84 and the dielectric layer 74 to form a plurality of non-shading photodiodes in the protective layer 84 and the portion of the dielectric layer 74. The grooves 90/92 of the body 66, for example, respectively correspond to shallow trench isolations 68 that surround the periphery of each of the photodiodes 66.
接著如第5圖所示,去除圖案化光阻層88,並形成複數個由遮光材料所構成的圖案化遮光層94於凹槽90/92內。在本實施例中,圖案化遮光層94較佳由黑色光阻材料所構成。但不侷限於此,圖案化遮光層94又可由金屬所構成,例如鎢金屬等金屬材料。若圖案化遮光層94由光阻材料所構成,則在填入凹槽90/92後可藉由一電漿製程去除部分設於保護層84表面的光阻材料;若圖案化遮光層94是由金屬材料所構成,則在填入凹槽90/92後可再進行一化學機械研磨(chemical mechanical polishing,CMP)製程來對此金屬材料進行一平坦化步驟,使填入凹槽90/92內的遮光材料與保護層84表面齊平。Next, as shown in FIG. 5, the patterned photoresist layer 88 is removed, and a plurality of patterned light-shielding layers 94 made of a light-shielding material are formed in the grooves 90/92. In the present embodiment, the patterned light shielding layer 94 is preferably composed of a black photoresist material. However, it is not limited thereto, and the patterned light shielding layer 94 may be composed of a metal such as a metal material such as tungsten metal. If the patterned light-shielding layer 94 is made of a photoresist material, a portion of the photoresist material disposed on the surface of the protective layer 84 can be removed by a plasma process after filling the recess 90/92; if the patterned light-shielding layer 94 is The metal material is formed by a chemical mechanical polishing (CMP) process after filling the grooves 90/92 to perform a planarization step on the metal material to fill the grooves 90/92. The inner light shielding material is flush with the surface of the protective layer 84.
隨後利用先前形成凹槽90/92的同一個圖案化光罩86以及同一對準記號進行一彩色濾光片陣列製程,以於平坦之圖案化遮光層94與保護層84表面形成複數個由藍色濾光片96、綠色濾光片98及紅色濾光片100所構成的彩色濾光陣列。如上所示,本實施例雖以藍色、綠色及紅色等三種顏色的濾光片為例,但彩色濾光陣列的顏色與配置方式不侷限於此,又可選自青綠色(cyan)濾光片、洋紅色(magenta)濾光片、及黃色(yellow)濾光片等其他顏色的濾光片,或構成三種顏色以上之彩色濾光片陣列,此組合均屬本發明所涵蓋的範圍。A color filter array process is then performed using the same patterned mask 86 and the same alignment marks that previously formed the recesses 90/92 to form a plurality of blues on the surface of the planar patterned light-shielding layer 94 and the protective layer 84. A color filter array composed of a color filter 96, a green filter 98, and a red filter 100. As shown in the above, although the color filter of three colors, such as blue, green, and red, is taken as an example, the color and arrangement of the color filter array are not limited thereto, and may be selected from cyan filter. Other color filters such as a light sheet, a magenta filter, and a yellow filter, or an array of color filters constituting three or more colors, all of which are within the scope of the present invention .
然後形成一平坦層102並覆蓋各濾光片96/98/100表面,並接著於平坦層102上方相對應各濾光片96/98/100之處形成複數個微透鏡104/106/108。形成微透鏡104/106/108的方式可先形成一由壓克力材料(acrylate material)構成的聚合物層(未顯示)於平坦層102表面,然後利用先前形成凹槽90/92的同一個圖案化光罩86以及同一對準記號對聚合物層進行一曝光及顯影製程,並搭配進行一熱回流(reflow)製程,以於相對各濾光片96/98/100的平坦層102上形成複數個微透鏡104/106/108。A flat layer 102 is then formed and covers the surface of each filter 96/98/100, and then a plurality of microlenses 104/106/108 are formed above the flat layer 102 corresponding to each of the filters 96/98/100. The microlenses 104/106/108 may be formed by first forming a polymer layer (not shown) composed of an acrylate material on the surface of the flat layer 102, and then utilizing the same one previously formed into the grooves 90/92. The patterned mask 86 and the same alignment mark perform an exposure and development process on the polymer layer, and are subjected to a thermal reflow process to form on the flat layer 102 of each of the filters 96/98/100. A plurality of microlenses 104/106/108.
相較於上述第一實施例,本實施例主要採用同一個圖案化光罩來蝕刻形成圖案化遮光層94的凹槽90/92及後續的微透鏡104/106/108,且由於形成凹槽90/92的圖案化光阻層88是採用正型光阻,因此所形成的微透鏡104/106/108邊緣較佳與圖案化遮光層94的邊緣錯開且不相互重疊。Compared with the first embodiment described above, the present embodiment mainly uses the same patterned mask to etch the grooves 90/92 and the subsequent microlenses 104/106/108 forming the patterned light shielding layer 94, and The 90/92 patterned photoresist layer 88 is a positive photoresist, so that the formed microlenses 104/106/108 edges are preferably offset from the edges of the patterned light shielding layer 94 and do not overlap each other.
因此依據第5圖所述之製程,本發明另揭露一種影像感測元件之結構。如圖中所示,影像感測元件主要包含一基底62;複數個感光二極體66設置於基底62中;一層間介電層70設於覆蓋於基底62表面與感光二極體66上;複數個介電層72/74覆蓋於層間介電層70上;複數個圖案化金屬層78/80設置於介電層72/74中;一保護層84設置於介電層72/74表面;複數個圖案化遮光層94設於保護層84及部分介電層74中;複數個彩色濾光片96/98/100設於保護層84表面;一平坦層102設於彩色濾光片96/98/100上;以及複數個微透鏡104/106/108設置於平坦層102表面並對應各彩色濾光片96/98/100。Therefore, according to the process described in FIG. 5, the present invention further discloses a structure of an image sensing element. As shown in the figure, the image sensing element mainly comprises a substrate 62; a plurality of photosensitive diodes 66 are disposed in the substrate 62; an interlayer dielectric layer 70 is disposed on the surface of the substrate 62 and the photosensitive diode 66; A plurality of dielectric layers 72/74 are overlying the interlayer dielectric layer 70; a plurality of patterned metal layers 78/80 are disposed in the dielectric layer 72/74; a protective layer 84 is disposed on the surface of the dielectric layer 72/74; A plurality of patterned light shielding layers 94 are disposed in the protective layer 84 and a portion of the dielectric layer 74; a plurality of color filters 96/98/100 are disposed on the surface of the protective layer 84; and a flat layer 102 is disposed on the color filter 96/ 98/100; and a plurality of microlenses 104/106/108 are disposed on the surface of the flat layer 102 and correspond to the respective color filters 96/98/100.
在本實施例中,各微透鏡104/106/108的邊緣較佳不重疊各圖案化遮光層94。另外,彩色濾光片96/98/100可選自紅色濾光片、綠色濾光片、藍色濾光片、青綠色濾光片、洋紅色濾光片、以及黃色濾光片等,且圖案化遮光層94可包選自黑色光阻材料或鎢等金屬材料。In the present embodiment, the edges of the respective microlenses 104/106/108 preferably do not overlap the patterned light shielding layers 94. In addition, the color filter 96/98/100 may be selected from the group consisting of a red filter, a green filter, a blue filter, a cyan filter, a magenta filter, and a yellow filter, and the like, and The patterned light shielding layer 94 may be selected from a black photoresist material or a metal material such as tungsten.
另外需注意的是,第5圖所揭露的實施例是針對感測器陣列區64之中央區域所改良的設計,但不侷限於此,本發明又可依據上述第3圖所揭露的實施例將第4-5圖的製程套用至晶粒上感測器陣列區64的邊緣區域。如第6圖所示,本發明可將上述於保護層84中形成圖案化遮光層94及彩色濾光陣列等製程套用至感測器陣列區64的中央區域114及邊緣區域116,以製作出另一種影像感測元件結構。如圖中所示,即便感測器陣列區64之邊緣區域116的微透鏡104/106/108經過程式移轉而略微偏移對應感光二極體66的位置,但由於形成圖案化遮光層94與微透鏡104/106/108等兩個步驟均採用同一個圖案化光罩以及同一對準記號,因此所製作出的微透鏡104/106/108邊緣仍較佳不重疊任何圖案化遮光層94。In addition, it should be noted that the embodiment disclosed in FIG. 5 is an improved design for the central region of the sensor array region 64, but is not limited thereto, and the present invention may be further in accordance with the embodiment disclosed in FIG. The process of Figures 4-5 is applied to the edge regions of the sensor array area 64 on the die. As shown in FIG. 6, the present invention can apply the process of forming the patterned light shielding layer 94 and the color filter array in the protective layer 84 to the central region 114 and the edge region 116 of the sensor array region 64 to produce Another type of image sensing element structure. As shown in the figure, even though the microlenses 104/106/108 of the edge region 116 of the sensor array region 64 are slightly shifted by the program to correspond to the position of the photodiode 66, the patterned light shielding layer 94 is formed. The same patterned reticle and the same alignment mark are used in both steps of the microlens 104/106/108, so that the microlens 104/106/108 edge is still preferably not overlapped with any patterned light shielding layer 94. .
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
12...基底12. . . Base
14...感測器陣列區14. . . Sensor array area
16...感光二極體16. . . Photosensitive diode
18...淺溝隔離18. . . Shallow trench isolation
20...層間介電層20. . . Interlayer dielectric layer
22...介電層twenty two. . . Dielectric layer
24...介電層twenty four. . . Dielectric layer
26...介電層26. . . Dielectric layer
28...圖案化金屬層28. . . Patterned metal layer
30...圖案化金屬層30. . . Patterned metal layer
32...圖案化金屬層32. . . Patterned metal layer
34...保護層34. . . The protective layer
36...圖案化光罩36. . . Patterned mask
38...圖案化光阻層38. . . Patterned photoresist layer
40...凹槽40. . . Groove
42...凹槽42. . . Groove
44...凹槽44. . . Groove
46...濾光片46. . . Filter
48...濾光片48. . . Filter
50...濾光片50. . . Filter
52...平坦層52. . . Flat layer
54...微透鏡54. . . Microlens
56...微透鏡56. . . Microlens
58...微透鏡58. . . Microlens
62...基底62. . . Base
64...感測器陣列區64. . . Sensor array area
66...感光二極體66. . . Photosensitive diode
68...淺溝隔離68. . . Shallow trench isolation
70...層間介電層70. . . Interlayer dielectric layer
72...介電層72. . . Dielectric layer
74...介電層74. . . Dielectric layer
78...圖案化金屬層78. . . Patterned metal layer
80...圖案化金屬層80. . . Patterned metal layer
84...保護層84. . . The protective layer
86...圖案化光罩86. . . Patterned mask
88...圖案化光阻層88. . . Patterned photoresist layer
90...凹槽90. . . Groove
92...凹槽92. . . Groove
94...圖案化遮光層94. . . Patterned shading layer
96...濾光片96. . . Filter
98...濾光片98. . . Filter
100...濾光片100. . . Filter
102...平坦層102. . . Flat layer
104...微透鏡104. . . Microlens
106...微透鏡106. . . Microlens
108...微透鏡108. . . Microlens
110...中央區域110. . . Central area
112...邊緣區域112. . . Edge area
114...中央區域114. . . Central area
116...邊緣區域116. . . Edge area
第1圖至第2圖為本發明第一實施例製作一影像感測元件之示意圖。1 to 2 are schematic views showing an image sensing element produced in accordance with a first embodiment of the present invention.
第3圖為本發明將第一實施例之製程套用至感測器陣列區之邊緣區域之結構示意圖。Figure 3 is a schematic view showing the structure of the first embodiment of the present invention applied to the edge region of the sensor array region.
第4圖至第5圖為本發明第二實施例製作一影像感測元件之示意圖。4 to 5 are schematic views showing the fabrication of an image sensing element according to a second embodiment of the present invention.
第6圖為本發明將第二實施例之製程套用至感測器陣列區之邊緣區域之結構示意圖。Figure 6 is a schematic view showing the structure of the second embodiment of the present invention applied to the edge region of the sensor array region.
12...基底12. . . Base
14...感測器陣列區14. . . Sensor array area
16...感光二極體16. . . Photosensitive diode
18...淺溝隔離18. . . Shallow trench isolation
20...層間介電層20. . . Interlayer dielectric layer
22...介電層twenty two. . . Dielectric layer
24...介電層twenty four. . . Dielectric layer
26...介電層26. . . Dielectric layer
28...圖案化金屬層28. . . Patterned metal layer
30...圖案化金屬層30. . . Patterned metal layer
32...圖案化金屬層32. . . Patterned metal layer
34...保護層34. . . The protective layer
46...濾光片46. . . Filter
48...濾光片48. . . Filter
50...濾光片50. . . Filter
52...平坦層52. . . Flat layer
54...微透鏡54. . . Microlens
56...微透鏡56. . . Microlens
58...微透鏡58. . . Microlens
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