TWI596617B - Contorl circuit applied in e-fuse system and related method - Google Patents
Contorl circuit applied in e-fuse system and related method Download PDFInfo
- Publication number
- TWI596617B TWI596617B TW105107567A TW105107567A TWI596617B TW I596617 B TWI596617 B TW I596617B TW 105107567 A TW105107567 A TW 105107567A TW 105107567 A TW105107567 A TW 105107567A TW I596617 B TWI596617 B TW I596617B
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- fuse
- control circuit
- read
- switch
- Prior art date
Links
Description
本發明係有關於一電子熔絲(E-fuse)系統,尤指應用於電子熔絲系統的一控制電路以及一相關方法。The present invention relates to an electronic fuse (E-fuse) system, and more particularly to a control circuit for an electronic fuse system and a related method.
傳統的半導體裝置包含具有冗餘記憶體單元的一熔絲電路,其中該熔絲電路利用損壞的記憶體單元的位址來編譯(programmed),並且用於決定是否存取一冗餘記憶體單元。在此,編譯一詞代表一連串針對相對應的目標檔案的一熔絲執行的切割(cutting)或不切割的操作,其中該熔絲包含於該熔絲電路之中,傳統上應用於半導體裝置的熔絲電路架構需要使用大量的面積並且消耗可觀的功率。A conventional semiconductor device includes a fuse circuit having a redundant memory cell, wherein the fuse circuit is programmed with the address of the damaged memory cell, and is used to determine whether to access a redundant memory cell. . Here, the word compile represents a series of cutting or non-cutting operations performed on a fuse for a corresponding target file, wherein the fuse is included in the fuse circuit, and is conventionally applied to a semiconductor device. The fuse circuit architecture requires a large amount of area and consumes considerable power.
本發明的目的之一在於揭露一種可有效減少使用面積之一種應用於電子熔絲系統的控制電路以及一相關方法來解決上述問題。One of the objects of the present invention is to disclose a control circuit for an electronic fuse system that can effectively reduce the use area and a related method to solve the above problems.
根據本發明一實施例,揭露一種應用於一電子熔絲系統的一控制電路,其中該控制電路選擇性地操作在一給予(feeding)模式以及一讀取(reading)模式,當該控制電路操作在該給予模式時,該控制電路係用以儲存一程式碼,其中該程式碼指示是否連接該電子熔絲系統的一熔絲至該控制電路;而當該控制電路操作在該讀取模式時,該控制電路係用以讀取耦接至該控制電路的該熔絲的一狀態。In accordance with an embodiment of the invention, a control circuit for use in an electronic fuse system is disclosed, wherein the control circuit is selectively operable in a feeding mode and a reading mode when the control circuit operates In the giving mode, the control circuit is configured to store a code, wherein the code indicates whether a fuse of the electronic fuse system is connected to the control circuit; and when the control circuit operates in the read mode The control circuit is configured to read a state of the fuse coupled to the control circuit.
根據本發明一實施例,揭露一電子熔絲系統的一控制方法,包含:選擇性地操作在一給予模式以及該讀取模式,當操作在該給予模式時,儲存一程式碼,其中該程式碼指示是否連接該電子熔絲系統的一熔絲;當操作在該讀取模式時,讀取該電子系統的該熔絲的一狀態。According to an embodiment of the invention, a control method for an electronic fuse system includes: selectively operating in a giving mode and the reading mode, and storing a code when operating in the giving mode, wherein the program The code indicates whether a fuse of the electronic fuse system is connected; when operating in the read mode, a state of the fuse of the electronic system is read.
在說明書及後續的申請專利範圍當中使用了某些詞彙來指稱特定的元件。所屬領域中具有通常知識者應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及後續的申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及後續的請求項當中所提及的「包含」係為一開放式的用語,故應解釋成「包含但不限定於」。此外,「耦接」一詞在此係包含任何直接及間接的電氣連接手段,因此,若文中描述一第一裝置耦接於一第二裝置,則代表該第一裝置可直接電氣連接於該第二裝置,或者透過其他裝置或連接手段間接地電氣連接至該第二裝置。Certain terms are used throughout the description and following claims to refer to particular elements. Those of ordinary skill in the art should understand that a hardware manufacturer may refer to the same component by a different noun. The scope of this specification and the subsequent patent application do not use the difference of the names as the means for distinguishing the elements, but the difference in function of the elements as the criterion for distinguishing. The term "including" as used throughout the specification and subsequent claims is an open term and should be interpreted as "including but not limited to". In addition, the term "coupled" is used herein to include any direct and indirect electrical connection means. Therefore, if a first device is coupled to a second device, it means that the first device can be directly electrically connected to the device. The second device is indirectly electrically connected to the second device through other devices or connection means.
第1圖係根據本發明一實施例之一電子熔絲系統100的示意圖,如第1圖所示,電子熔絲系統100包含一控制電路101、一熔絲燒斷器(burner)102以及一熔絲103,其中控制電路101選擇性地操作在一給予模式(feeding)以及一讀取模式(reading),當控制電路101操作在該給予模式時,控制電路101儲存一程式碼PROG,其中程式碼PROG用以指示是否透過熔絲燒斷器102連接熔絲103與控制電路101;當控制電路101操作在該讀取模式時,控制電路確認熔絲是否連接或斷開。耦接於控制電路101的熔絲燒斷器102係用以接收儲存於控制電路101的程式碼PROG並根據程式碼PROG決定是否將熔絲103與控制電路101連接。1 is a schematic diagram of an electronic fuse system 100 according to an embodiment of the present invention. As shown in FIG. 1, the electronic fuse system 100 includes a control circuit 101, a fuser 102, and a The fuse 103, wherein the control circuit 101 selectively operates in a feeding mode and a reading mode, and when the control circuit 101 operates in the giving mode, the control circuit 101 stores a code PROG, wherein the program The code PROG is used to indicate whether the fuse 103 and the control circuit 101 are connected through the fuse blower 102; when the control circuit 101 operates in the read mode, the control circuit confirms whether the fuse is connected or disconnected. The fuse blower 102 coupled to the control circuit 101 is configured to receive the code PROG stored in the control circuit 101 and determine whether to connect the fuse 103 to the control circuit 101 according to the code PROG.
第2圖係根據本發明一實施例之一電子熔絲系統100的一控制電路101示意圖,如第2圖所示,控制電路101包含一閂鎖電路201、一讀取電路202、一初始電路203以及一輸出端點OT,其中閂鎖電路201係用以當控制電路101操作於給予模式時將程式碼PROG儲存於輸出端OT上,而讀取電路202耦接至熔絲103,其中讀取電路202係用以當一讀取訊號READ控制控制電路101進入讀取模式時確認熔絲103的狀態,而初始電路203係耦接至一預設電壓VDD並透過一初始訊號IN來將閂鎖電路201初始化。讀取電路202可由一電晶體來實現,在此範例中,讀取電路202係由一N型金屬氧化物半導體場效電晶體(NMOSFET)SW1來實作的一開關元件,且該N型金屬氧化物半導體場效電晶體SW1係由讀取訊號READ所控制。另外,在此實施例中,初始電路203係由一P型金屬氧化物半導體場效電晶體(PMOSFET)SW3來實作的一開關元件,且該P型金屬氧化物半導體場效電晶體SW3係由初始訊號IN所控制,需注意的是,此僅為一範例說明,並非本發明的一限制,如第2圖所示,P型金屬氧化物半導體場效電晶體SW3的一源極端耦接至預設電壓VDD,一閘極端耦接至初始訊號IN,而一汲極端耦接至一端點N1,N型金屬氧化物半導體場效電晶體SW1的一源極端耦接至熔絲103,一閘極端耦接至讀取訊號READ,而一汲極端耦接至一端點N1。詳細來說,初始訊號IN開啟P型電晶體SW3將預設電壓VDD透過端點N1傳至閂鎖電路201以將輸出端點OT上的邏輯值初始化;而讀取訊號READ開啟N型電晶體SW1,並當控制電路101操作在讀取模式時透過讀取輸出端點OT上的邏輯值以確認熔絲103的狀態,閂鎖電路201的功能與架構將在後續段落中討論。2 is a schematic diagram of a control circuit 101 of an electronic fuse system 100 according to an embodiment of the present invention. As shown in FIG. 2, the control circuit 101 includes a latch circuit 201, a read circuit 202, and an initial circuit. 203 and an output terminal OT, wherein the latch circuit 201 is configured to store the code PROG on the output terminal OT when the control circuit 101 operates in the giving mode, and the read circuit 202 is coupled to the fuse 103, wherein the read The circuit 202 is configured to confirm the state of the fuse 103 when a read signal READ control circuit 101 enters the read mode, and the initial circuit 203 is coupled to a predetermined voltage VDD and is latched by an initial signal IN. The lock circuit 201 is initialized. The read circuit 202 can be implemented by a transistor. In this example, the read circuit 202 is a switching element implemented by an N-type metal oxide semiconductor field effect transistor (NMOSFET) SW1, and the N-type metal The oxide semiconductor field effect transistor SW1 is controlled by the read signal READ. In addition, in this embodiment, the initial circuit 203 is a switching element implemented by a P-type metal oxide semiconductor field effect transistor (PMOSFET) SW3, and the P-type metal oxide semiconductor field effect transistor SW3 system Controlled by the initial signal IN, it should be noted that this is merely an example and is not a limitation of the present invention. As shown in FIG. 2, a source terminal of the P-type MOSFET SW3 is coupled. Up to a preset voltage VDD, a gate terminal is coupled to the initial signal IN, and a terminal is coupled to an end point N1. A source terminal of the N-type MOSFET FET is coupled to the fuse 103. The gate is coupled to the read signal READ and the other terminal is coupled to an end point N1. In detail, the initial signal IN turns on the P-type transistor SW3 to pass the preset voltage VDD to the latch circuit 201 through the terminal N1 to initialize the logic value on the output terminal OT; and the read signal READ turns on the N-type transistor. SW1, and confirming the state of the fuse 103 by reading the logic value on the output terminal OT when the control circuit 101 operates in the read mode, the function and architecture of the latch circuit 201 will be discussed in subsequent paragraphs.
第3圖係根據本發明一實施例之控制電路101的一閂鎖電路201示意圖,如第3圖所示,閂鎖電路201包含一輸入單元301、一回授單元302以及一反向器INV,其中輸入單元301包含一電晶體T1,回授單元302包含電晶體T2、T3與T4、一開關SW2,在此實施例中,電晶體T1-T3以及開關SW2皆由N型金屬氧化物半導體場效電晶體所實現,而電晶體T4由一P型金屬氧化物半導體場效電晶體實現,但此僅為一範例說明,並非本發明的一限制。如第3圖所示,電晶體T1的源極端耦接至一預設電壓(在此實施例為接地端),閘極端耦接至程式碼PROG,而汲極端耦接至開關SW2的一源極端,另外,開關SW2的一閘極端耦接至給予訊號FEED。電晶體T2的一源極端耦接至接地端,一閘極端耦接至輸出端點OT,以及一汲極端耦接至電晶體T3的一源極端。電晶體T3的一閘極端耦接至初始訊號IN,而一汲極端耦接至端點N1。電晶體T4的一源極端耦接至預設電壓VDD,一閘極端耦接至輸出端點OT,而一汲極端耦接至端點N1。反向器INV的一輸入端耦接至端點N1,而反向器INV的一輸出端耦接至輸出端點OT,關於給予模式與讀取模式下的詳細操作將在後續段落中討論。3 is a schematic diagram of a latch circuit 201 of the control circuit 101 according to an embodiment of the present invention. As shown in FIG. 3, the latch circuit 201 includes an input unit 301, a feedback unit 302, and an inverter INV. The input unit 301 includes a transistor T1, and the feedback unit 302 includes transistors T2, T3, and T4, and a switch SW2. In this embodiment, the transistors T1-T3 and SW2 are both N-type metal oxide semiconductors. The field effect transistor is implemented, and the transistor T4 is implemented by a P-type metal oxide semiconductor field effect transistor, but this is merely an illustrative example and is not a limitation of the present invention. As shown in FIG. 3, the source terminal of the transistor T1 is coupled to a predetermined voltage (in this embodiment, the ground terminal), the gate terminal is coupled to the code PROG, and the 汲 terminal is coupled to a source of the switch SW2. Extremely, in addition, a gate terminal of the switch SW2 is coupled to the signal FEED. A source terminal of the transistor T2 is coupled to the ground terminal, a gate terminal is coupled to the output terminal OT, and a terminal is coupled to a source terminal of the transistor T3. A gate terminal of the transistor T3 is coupled to the initial signal IN, and a terminal is coupled to the terminal N1. A source terminal of the transistor T4 is coupled to the preset voltage VDD, a gate terminal is coupled to the output terminal OT, and a terminal is coupled to the terminal terminal N1. An input of the inverter INV is coupled to the terminal N1, and an output of the inverter INV is coupled to the output terminal OT. Detailed operations in the grant mode and the read mode will be discussed in subsequent paragraphs.
參考第2圖、第3圖以及第4圖,第4圖係根據本發明一實施例之初始訊號、讀取訊號以及給予訊號的時序圖,如第4圖所示,當電子熔絲系統100初始化時,初始訊號IN為邏輯值0,初始電路203也因此開啟並將預設電壓VDD(即邏輯值1)導通至端點N1,而輸出端點OT的邏輯值也因此變成邏輯值0,如此一來,閂鎖電路201成功被初始化。當給予訊號FEED變成邏輯值1時,控制電路101操作在該給予模式,由給予訊號FEED所控制的開關SW2因此開啟,此時,電晶體T2、T3、T4與反向器INV組成一閂鎖器(latch),並且關閉讀取電路202與初始電路203。第5圖係根據本發明一實施例之控制電路操作在給予模式的示意圖,電晶體T1接收程式碼PROG並顯示於輸出端點OT上,若程式碼PROG為邏輯值1,輸出端點OT上的邏輯值1通知耦接至控制電路101的熔絲燒斷器102以將熔絲103連接至控制電路101中的讀取電路202,否則熔絲103將與控制電路101斷開,當讀取訊號READ變成邏輯值1時,控制電路101操作在讀取模式,第6圖係根據本發明一實施例之控制電路101操作在讀取模式的示意圖,此時由讀取訊號READ控制的N型電晶體SW1為導通,而初始電路203與開關SW2因此關閉,熔絲103的狀態會被傳送至輸出端點OT來指示熔絲103是否透過熔絲燒斷器102連接至讀取電路202。Referring to FIG. 2, FIG. 3 and FIG. 4, FIG. 4 is a timing diagram of an initial signal, a read signal, and a signal given according to an embodiment of the present invention. As shown in FIG. 4, when the electronic fuse system 100 is used. At initialization, the initial signal IN is a logic value of 0, the initial circuit 203 is thus turned on and the preset voltage VDD (ie, logic value 1) is turned on to the terminal N1, and the logic value of the output terminal OT is thus changed to a logic value of 0, As such, the latch circuit 201 is successfully initialized. When the signal FEED is given a logic value of 1, the control circuit 101 operates in the giving mode, and the switch SW2 controlled by the giving signal FEED is thus turned on. At this time, the transistors T2, T3, T4 and the inverter INV form a latch. The latch is turned off, and the read circuit 202 and the initial circuit 203 are turned off. Figure 5 is a schematic diagram showing the operation of the control circuit in the giving mode according to an embodiment of the present invention. The transistor T1 receives the program code PROG and displays it on the output terminal OT. If the program code PROG is a logic value 1, the output terminal OT is The logical value 1 informs the fuse blower 102 coupled to the control circuit 101 to connect the fuse 103 to the read circuit 202 in the control circuit 101, otherwise the fuse 103 will be disconnected from the control circuit 101 when reading When the signal READ becomes a logic value 1, the control circuit 101 operates in the read mode, and FIG. 6 is a schematic diagram of the control circuit 101 operating in the read mode according to an embodiment of the present invention, and the N-type controlled by the read signal READ at this time. The transistor SW1 is turned on, and the initial circuit 203 and the switch SW2 are thus turned off, and the state of the fuse 103 is transmitted to the output terminal OT to indicate whether the fuse 103 is connected to the read circuit 202 through the fuse blower 102.
簡單歸納本發明,本發明揭露一種應用於電子熔絲系統的控制電路架構,其可以有效降低面積使用以及功率損耗。 以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。Briefly summarized, the present invention discloses a control circuit architecture applied to an electronic fuse system that can effectively reduce area usage and power loss. The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
100‧‧‧電子熔絲系統 100‧‧‧Electronic fuse system
101‧‧‧控制電路 101‧‧‧Control circuit
102‧‧‧熔絲燒斷器 102‧‧‧Fuse blower
103‧‧‧熔絲 103‧‧‧Fuse
PROG‧‧‧程式碼 PROG‧‧‧ Code
SW1、SW3‧‧‧開關 SW1, SW3‧‧‧ switch
READ‧‧‧讀取訊號 READ‧‧‧ read signal
IN‧‧‧初始訊號 IN‧‧‧ initial signal
OT‧‧‧輸出端點 OT‧‧‧output endpoint
201‧‧‧閂鎖器 201‧‧‧Latch
202‧‧‧讀取電路 202‧‧‧Read circuit
203‧‧‧初始電路 203‧‧‧ initial circuit
VDD‧‧‧預設電壓 VDD‧‧‧preset voltage
T1-T4‧‧‧電晶體 T1-T4‧‧‧O crystal
N1‧‧‧端點 N1‧‧‧ endpoint
INV‧‧‧反向器 INV‧‧‧ reverser
第1圖係根據本發明一實施例之一電子熔絲系統的示意圖。 第2圖係根據本發明一實施例之一電子熔絲系統的一控制電路示意圖。 第3圖係根據本發明一實施例之控制電路的一閂鎖電路示意圖。 第4圖係根據本發明一實施例之初始訊號、讀取訊號以及給予訊號的時序圖。 第5圖係根據本發明一實施例之控制電路操作在給予模式的示意圖。 第6圖係根據本發明一實施例之控制電路操作在讀取模式的示意圖。1 is a schematic view of an electronic fuse system in accordance with an embodiment of the present invention. 2 is a schematic diagram of a control circuit of an electronic fuse system according to an embodiment of the present invention. Figure 3 is a schematic diagram of a latch circuit of a control circuit in accordance with an embodiment of the present invention. Figure 4 is a timing diagram of an initial signal, a read signal, and a signal given in accordance with an embodiment of the present invention. Figure 5 is a schematic illustration of the control circuit operating in a mode of administration in accordance with an embodiment of the present invention. Figure 6 is a schematic illustration of the control circuit operating in a read mode in accordance with an embodiment of the present invention.
101‧‧‧控制電路 101‧‧‧Control circuit
103‧‧‧熔絲 103‧‧‧Fuse
OT‧‧‧輸出端點 OT‧‧‧output endpoint
201‧‧‧閂鎖電路 201‧‧‧Latch circuit
PROG‧‧‧程式碼 PROG‧‧‧ Code
IN‧‧‧初始訊號 IN‧‧‧ initial signal
READ‧‧‧讀取訊號 READ‧‧‧ read signal
203‧‧‧初始電路 203‧‧‧ initial circuit
202‧‧‧讀取電路 202‧‧‧Read circuit
N1‧‧‧端點 N1‧‧‧ endpoint
SW1、SW3‧‧‧開關 SW1, SW3‧‧‧ switch
Claims (18)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105107567A TWI596617B (en) | 2016-03-11 | 2016-03-11 | Contorl circuit applied in e-fuse system and related method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105107567A TWI596617B (en) | 2016-03-11 | 2016-03-11 | Contorl circuit applied in e-fuse system and related method |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI596617B true TWI596617B (en) | 2017-08-21 |
TW201732828A TW201732828A (en) | 2017-09-16 |
Family
ID=60189174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105107567A TWI596617B (en) | 2016-03-11 | 2016-03-11 | Contorl circuit applied in e-fuse system and related method |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI596617B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10672495B1 (en) * | 2019-06-16 | 2020-06-02 | Elite Semiconductor Memory Technology Inc. | E-fuse burning circuit and E-fuse burning method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020122331A1 (en) * | 2001-02-27 | 2002-09-05 | Giovanni Santin | Flash cell fuse circuit |
US20040052121A1 (en) * | 2001-02-27 | 2004-03-18 | Micron Technology, Inc. | Flash cell fuse circuit |
-
2016
- 2016-03-11 TW TW105107567A patent/TWI596617B/en active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020122331A1 (en) * | 2001-02-27 | 2002-09-05 | Giovanni Santin | Flash cell fuse circuit |
US20040052121A1 (en) * | 2001-02-27 | 2004-03-18 | Micron Technology, Inc. | Flash cell fuse circuit |
Also Published As
Publication number | Publication date |
---|---|
TW201732828A (en) | 2017-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7551497B2 (en) | Memory circuits preventing false programming | |
US5680360A (en) | Circuits for improving the reliablity of antifuses in integrated circuits | |
US7323925B2 (en) | Static, low-voltage fuse-based cell with high-voltage programming | |
US20060164136A1 (en) | Circuit and method for power-on reset | |
JPH10199278A (en) | Repair fuse circuit for flash memory device | |
JP2007109401A (en) | Mode register and nonvolatile semiconductor memory apparatus | |
JP2016511933A5 (en) | ||
US6791373B2 (en) | High-voltage detecting circuit | |
TWI596617B (en) | Contorl circuit applied in e-fuse system and related method | |
US8526211B1 (en) | Memory program circuit | |
US6903598B2 (en) | Static, low-voltage fuse-based cell with high-voltage programming | |
US9479169B1 (en) | Control circuit applied in e-fuse system and related method | |
KR100703886B1 (en) | Apparatus for protecting electrical-fuse and semiconductor device comprising the same | |
TWI541813B (en) | Anti-fuse control circuit | |
US6041009A (en) | Apparatus for stabilizing an antifuse used for a memory device | |
US7626845B2 (en) | Voltage programming switch for one-time-programmable (OTP) memories | |
WO2023149418A1 (en) | Non-volatile memory device | |
US10790037B2 (en) | Circuit for generating bias current for reading OTP cell and control method thereof | |
US6230275B1 (en) | Circuit for powering down unused configuration bits to minimize power consumption | |
KR100567526B1 (en) | Power-up reset circuit of memory chip | |
US7889588B2 (en) | Circuit having gate oxide protection for low voltage fuse reads and high voltage fuse programming | |
US7375579B1 (en) | Programming of fuse-based memories using snapback devices | |
KR20030056456A (en) | Anti fuse precharge circuit for semiconductor device | |
US6998904B2 (en) | Circuit and method for turn-on of an internal voltage rail | |
KR100439104B1 (en) | Anti fuse control circuit |