TWI594356B - Load lock chamber, edge bevel removal device and semicondcutor manufacturing equipment - Google Patents

Load lock chamber, edge bevel removal device and semicondcutor manufacturing equipment Download PDF

Info

Publication number
TWI594356B
TWI594356B TW105134486A TW105134486A TWI594356B TW I594356 B TWI594356 B TW I594356B TW 105134486 A TW105134486 A TW 105134486A TW 105134486 A TW105134486 A TW 105134486A TW I594356 B TWI594356 B TW I594356B
Authority
TW
Taiwan
Prior art keywords
upper cover
sleeve
bearing surface
chamber
mask
Prior art date
Application number
TW105134486A
Other languages
Chinese (zh)
Other versions
TW201816908A (en
Inventor
詹宏基
曹展謀
Original Assignee
台灣積體電路製造股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司
Priority to TW105134486A priority Critical patent/TWI594356B/en
Application granted granted Critical
Publication of TWI594356B publication Critical patent/TWI594356B/en
Publication of TW201816908A publication Critical patent/TW201816908A/en

Links

Description

裝載腔體、晶圓洗邊裝置及半導體製程設備Loading chamber, wafer edge washer and semiconductor process equipment

本發明實施例是有關於一種裝載腔體,且特別是有關於一種使用於晶圓洗邊製程的裝載腔體。Embodiments of the present invention relate to a loading chamber, and more particularly to a loading chamber for use in a wafer edge trimming process.

在積體電路的製作過程中,多層的薄膜以例如是物理氣相沈積(physical vapor deposition;簡稱PVD)或是化學氣相沉積(chemical vapor deposition;簡稱CVD)等方式沉積於晶圓的主動面(active surface)上。當晶圓完成多層薄膜的沉積,以及乾燥與烘烤的步驟之後,晶圓的主動面的邊緣往往會有殘留的光阻層。此外,在後續的製程中,光阻層的剝離以及其剝離後所產生的碎屑將影響薄膜的製作品質。因此,半導體晶圓須以洗邊(edge bevel removal)的方式來去除晶圓的主動面周圍的光阻層及其他不需要的沉積層。In the fabrication process of the integrated circuit, the multilayer film is deposited on the active surface of the wafer by, for example, physical vapor deposition (PVD) or chemical vapor deposition (CVD). (active surface). After the wafer completes the deposition of the multilayer film, and the drying and baking steps, the edge of the active face of the wafer tends to have a residual photoresist layer. In addition, in the subsequent process, the peeling of the photoresist layer and the debris generated after the peeling off will affect the quality of the film. Therefore, the semiconductor wafer must be removed by edge bevel removal to remove the photoresist layer around the active face of the wafer and other unwanted deposited layers.

在目前的洗邊製程中,晶圓周邊的光阻層可藉由電漿蝕刻的方式來去除。在電漿進行蝕刻的過程中,晶圓的主動面上方可以遮罩來遮蔽電漿,並且同時於其中通入吹掃氣體(purge gas)來對晶圓的主動面進行降溫。一般而言,裝載晶圓的腔體的上蓋體的底部具有定位柱以及直接套設於定位柱上的彈簧。當裝載腔體的上蓋體蓋合於其下座體時,彈簧可對遮罩提供彈性支撐。然而,在腔體的上蓋體相對於下座體上升或下降的過程中,彈簧常會由於本身的長度過長,而相對於腔體產生水平橫向的變形或晃動,而致使彈簧與上蓋體的壁面或是定位柱的表面產生接觸、摩擦或碰撞,使得彈簧本身、上蓋體的壁面或是定位柱的表面產生微粒剝落的情形。由彈簧、腔體或是定位柱的表面上剝落的微粒可能會掉落於晶圓表面上時,並對晶圓製程品質產生不良的影響。因此,如何避免於晶圓洗邊過程中於晶圓表面產生微粒已成為亟待克服的問題。In the current edge-washing process, the photoresist layer around the wafer can be removed by plasma etching. During the etching of the plasma, the active surface of the wafer may be masked to shield the plasma, and at the same time a purge gas is introduced therein to cool the active surface of the wafer. Generally, the bottom of the upper cover of the cavity for loading the wafer has a positioning post and a spring directly sleeved on the positioning post. The spring provides resilient support to the shroud when the upper cover of the loading chamber is capped to its lower seat. However, during the process of ascending or descending the upper cover of the cavity relative to the lower body, the spring often has a horizontally transverse deformation or sway relative to the cavity due to its length being too long, resulting in the wall of the spring and the upper cover. Or the surface of the positioning post is in contact, friction or collision, so that the spring itself, the wall surface of the upper cover or the surface of the positioning post is spalled. Particles peeled off from the surface of the spring, cavity or locating post may fall on the wafer surface and adversely affect the wafer process quality. Therefore, how to avoid the generation of particles on the surface of the wafer during wafer edge cleaning has become an urgent problem to be overcome.

本發明實施例提供一種裝載腔體,包括:腔體、支撐載板、緩衝元件以及遮罩。腔體包括上蓋體及下座體,且上蓋體與下座體結合而共同形成腔室。上蓋體的底部具有朝下座體的方向垂直延伸的定位柱。支撐載板配置於腔室中並具有承載面,且承載面用以承載工件。緩衝元件耦接固定於定位柱。緩衝元件具有套筒及彈性件,並且套筒的一端與彈性件彼此連接,而套筒的另一端具有開口。套筒經由開口套設於定位柱上。遮罩配置於支撐載版的承載面上。Embodiments of the present invention provide a loading cavity including: a cavity, a supporting carrier, a cushioning component, and a mask. The cavity includes an upper cover body and a lower seat body, and the upper cover body and the lower seat body are combined to form a chamber. The bottom of the upper cover has a positioning post that extends vertically in the direction of the lower base. The support carrier is disposed in the chamber and has a bearing surface, and the bearing surface is used to carry the workpiece. The buffer component is coupled to the positioning post. The cushioning member has a sleeve and an elastic member, and one end of the sleeve is coupled to the elastic member, and the other end of the sleeve has an opening. The sleeve is sleeved on the positioning post via the opening. The mask is disposed on the bearing surface of the support plate.

本發明實施例更提供一種晶圓洗邊裝置,包括:裝載腔體、吹掃氣體擴散區以及電漿擴散區。裝載腔體包括包括腔體、支撐載板、緩衝元件以及遮罩。腔體包括上蓋體及下座體,且上蓋體與下座體結合而共同形成腔室。上蓋體的底部具有朝下座體的方向垂直延伸的定位柱。支撐載板配置於腔室中並具有承載面,且承載面用以承載工件。緩衝元件耦接固定於定位柱。緩衝元件具有套筒及彈性件,並且套筒的一端與彈性件彼此連接,而套筒的另一端具有開口。套筒經由開口套設於定位柱上。吹掃氣體擴散區位於遮罩與承載面之間。電漿擴散區位於未被遮罩遮蔽的部分承載面上。The embodiment of the invention further provides a wafer edge washing device, comprising: a loading cavity, a purge gas diffusion zone and a plasma diffusion zone. The loading cavity includes a cavity, a support carrier, a cushioning element, and a mask. The cavity includes an upper cover body and a lower seat body, and the upper cover body and the lower seat body are combined to form a chamber. The bottom of the upper cover has a positioning post that extends vertically in the direction of the lower base. The support carrier is disposed in the chamber and has a bearing surface, and the bearing surface is used to carry the workpiece. The buffer component is coupled to the positioning post. The cushioning member has a sleeve and an elastic member, and one end of the sleeve is coupled to the elastic member, and the other end of the sleeve has an opening. The sleeve is sleeved on the positioning post via the opening. The purge gas diffusion zone is located between the mask and the load bearing surface. The plasma diffusion zone is located on a portion of the bearing surface that is not obscured by the mask.

本發明實施例又提供一種半導體製程設備,包括:如上述的晶圓洗邊裝置、製程腔體以及裝卸站。製程腔體配置於晶圓洗邊裝置的一側。裝卸站配置於晶圓洗邊裝置的另一側,以容置待載入或待載出的工件。The embodiment of the invention further provides a semiconductor process equipment, comprising: the wafer edge washing device, the process cavity and the loading and unloading station as described above. The process chamber is disposed on one side of the wafer edge washing device. The loading and unloading station is disposed on the other side of the wafer edge washing device to accommodate the workpiece to be loaded or to be carried.

為讓本揭露的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.

以下揭露內容提供用於實施所提供的標的之不同特徵的許多不同實施例或實例。以下所描述的構件及配置的具體實例是為了以簡化的方式傳達本揭露為目的。當然,這些僅僅為實例而非用以限制。此外,本揭露在各種實例中可使用相同的元件符號及/或字母來指代相同或類似的部件。元件符號的重複使用是為了簡單及清楚起見,且並不表示所欲討論的各個實施例及/或配置本身之間的關係。The following disclosure provides many different embodiments or examples for implementing different features of the subject matter provided. Specific examples of the components and configurations described below are for the purpose of conveying the disclosure in a simplified manner. Of course, these are merely examples and not intended to be limiting. In addition, the present disclosure may use the same component symbols and/or letters in the various examples to refer to the same or similar components. The repeated use of the component symbols is for simplicity and clarity and does not represent a relationship between the various embodiments and/or configurations themselves to be discussed.

另外,為了易於描述附圖中所繪示的一個構件或特徵與另一組件或特徵的關係,本文中可使用例如「在...下」、「在...下方」、「下部」、「在…上」、「在…上方」、「上部」及類似術語的空間相對術語。除了附圖中所繪示的定向之外,所述空間相對術語意欲涵蓋元件在使用或操作時的不同定向。設備可被另外定向(旋轉90度或在其他定向),而本文所用的空間相對術語相應地作出解釋。In addition, in order to facilitate the description of the relationship between one component or feature illustrated in the drawings and another component or feature, for example, "under", "below", "lower", Spatial relative terms for "on", "above", "upper" and similar terms. In addition to the orientation depicted in the figures, the spatially relative terms are intended to encompass different orientations of the elements in use or operation. The device can be otherwise oriented (rotated 90 degrees or at other orientations), while the spatially relative terms used herein are interpreted accordingly.

此處所揭露的實施例是採用具體用語進行揭露。其他實施例考慮到其他應用,此領域具有通常知識者在閱讀本揭露內容之後已經可以輕易地聯想到其他應用。值得注意的是,此處所揭露的實施例並無必要說明所有出現於結構中的元件或特徵。舉例而言,單個元件的複數型態可能於圖式中省略,例如單個元件的說明將足以傳達多個實施例中的不同樣態。此外,此處所討論的方法實施例可依照特定的順序進行;然而,其他方法實施例亦可依照任何一種符合邏輯的順序進行。The embodiments disclosed herein are disclosed in specific terms. Other Embodiments In view of other applications, those skilled in the art can easily associate other applications after reading the disclosure. It should be noted that the embodiments disclosed herein do not necessarily describe all of the elements or features that are present in the structure. For example, a plural form of a single element may be omitted from the drawings, for example, a single element description will be sufficient to convey a dissimilarity in the various embodiments. Moreover, the method embodiments discussed herein can be performed in a particular order; however, other method embodiments can be performed in any logical order.

圖1是依照本揭露的一實施例的半導體製程設備的示意圖。在本實施例中,半導體製程設備10包括裝卸站(loading station) 300、裝載腔體100a、100b以及製程腔體200。裝卸站300可用來自晶圓預置區312、314載入晶圓50進入半導體製程設備10中進行處理。此外,機械手臂310可配置於裝卸站300中,並且裝卸站300中的晶圓50可經由機械手臂310來載入裝載腔體100b中,或是經由裝載腔體100a將完成處理步驟的晶圓50取出。1 is a schematic diagram of a semiconductor process device in accordance with an embodiment of the present disclosure. In the present embodiment, the semiconductor processing apparatus 10 includes a loading station 300, loading chambers 100a, 100b, and a process chamber 200. The loading station 300 can be loaded into the wafer 50 from the wafer preset areas 312, 314 into the semiconductor process equipment 10 for processing. In addition, the robot arm 310 can be disposed in the loading and unloading station 300, and the wafer 50 in the loading and unloading station 300 can be loaded into the loading cavity 100b via the robot arm 310, or the wafer that completes the processing step via the loading cavity 100a. 50 removed.

圖2是依照本揭露的一實施例的裝載腔體的示意圖。在本實施例中,裝載腔體100a為晶圓洗邊裝置的主要組成構件。此外,裝載腔體100a的腔體可包括上蓋體110以及下座體120,並且上蓋體110及下座體120可分離地結合,並且共同形成腔室115。此外,上蓋體110的底部具有多個定位柱112,並且定位柱112朝下座體120的方向垂直延伸。再者,裝載腔體100a的支撐載板130配置於腔室115中,且支撐載板130具有承載面130a,並且承載面130a可用來承載例如是晶圓50的工件。2 is a schematic illustration of a loading chamber in accordance with an embodiment of the present disclosure. In the present embodiment, the loading chamber 100a is a main component of the wafer edge washing apparatus. Further, the cavity of the loading cavity 100a may include an upper cover body 110 and a lower seat body 120, and the upper cover body 110 and the lower seat body 120 may be detachably coupled and together form the chamber 115. In addition, the bottom of the upper cover 110 has a plurality of positioning posts 112, and the positioning posts 112 extend vertically in the direction of the lower base 120. Moreover, the support carrier 130 of the loading cavity 100a is disposed in the chamber 115, and the support carrier 130 has a bearing surface 130a, and the bearing surface 130a can be used to carry a workpiece such as the wafer 50.

在本實施例中,裝載腔體100a還可包括多個緩衝元件150。緩衝元件150可分別耦接固定於定位柱120上。具體而言,本實施例的緩衝元件150具有套筒152以及彈性件154。如圖2所示,套筒152的一端與彈性件154彼此連接,而套筒152的另一端具有開口152a。套筒152可經由開口152a套設於定位柱112上。在本實施例中,彈性件154可為螺旋彈簧,並且彈性件154未受外力時的自然長度約為13毫米至16毫米。當然,前述的彈性件154的長度範圍僅為舉例說明,本揭露的彈性件154的長度以及彈性件154相對於套筒152的長度的比值可根據實際機台的結構配置以及不同的製程應用來做適當的調整。In the present embodiment, the loading cavity 100a may also include a plurality of cushioning elements 150. The buffering component 150 can be coupled to the positioning post 120 respectively. Specifically, the cushioning member 150 of the present embodiment has a sleeve 152 and an elastic member 154. As shown in FIG. 2, one end of the sleeve 152 and the elastic member 154 are connected to each other, and the other end of the sleeve 152 has an opening 152a. The sleeve 152 can be sleeved on the positioning post 112 via the opening 152a. In the present embodiment, the elastic member 154 may be a coil spring, and the natural length of the elastic member 154 when it is not subjected to an external force is about 13 mm to 16 mm. Of course, the length range of the foregoing elastic member 154 is only an example. The ratio of the length of the elastic member 154 and the length of the elastic member 154 relative to the length of the sleeve 152 may be according to the structural configuration of the actual machine and different process applications. Make the appropriate adjustments.

除此之外,裝載腔體100a包括還包括遮罩140,並且遮罩140配置於承載面130a上。在本實施例中,上蓋體110具有進氣口114,其耦接於電漿氣體進氣管162,並且例如是配置於遠端的電漿源所產生的電漿可經由進氣口114導入腔室115中。請參考圖2,在本實施例中,遮罩140於承載面130a上的投影未完全覆蓋承載面130a,並且暴露出承載面130a的邊緣。由進氣口114導入的電漿在進入腔室115後,可經由遮罩140的邊緣抵達上述承載面130a的邊緣部分。因此,當例如是晶圓50的工件配置於承載面130時,晶圓50的中央部分的主動面可遮蔽於遮罩140之下,而晶圓50的邊緣部分則是暴露於遮罩140之外。也因此,由電漿源導入的電漿可對晶圓50的邊緣部分進行蝕刻,以去除在晶圓50的上表面,也就是主動面,於薄膜沉積製程中所殘餘的光阻層。前述的流程可避免在後續的製程中,由於前述的光阻層的剝落或是隨光阻層的剝落所產生的碎片而對於晶圓50上所沉積的薄膜品質產生不良的影響,進而影響於晶圓50的主動面上所製作的電子元件。In addition to this, the loading cavity 100a includes a mask 140, and the mask 140 is disposed on the bearing surface 130a. In the present embodiment, the upper cover 110 has an air inlet 114 coupled to the plasma gas inlet pipe 162, and the plasma generated by, for example, a plasma source disposed at the distal end can be introduced through the air inlet 114. In the chamber 115. Referring to FIG. 2, in the present embodiment, the projection of the mask 140 on the bearing surface 130a does not completely cover the bearing surface 130a, and exposes the edge of the bearing surface 130a. The plasma introduced by the air inlet 114 can reach the edge portion of the bearing surface 130a via the edge of the mask 140 after entering the chamber 115. Therefore, when a workpiece such as the wafer 50 is disposed on the carrying surface 130, the active surface of the central portion of the wafer 50 can be shielded under the mask 140, and the edge portion of the wafer 50 is exposed to the mask 140. outer. Therefore, the plasma introduced by the plasma source can etch the edge portion of the wafer 50 to remove the photoresist layer remaining on the upper surface of the wafer 50, that is, the active surface, in the thin film deposition process. The foregoing process can avoid adverse effects on the quality of the film deposited on the wafer 50 due to the peeling of the photoresist layer or the debris generated by the peeling of the photoresist layer in the subsequent process, thereby affecting Electronic components fabricated on the active surface of the wafer 50.

在本揭露另一個未繪示的實施例中,殘留於晶圓50的邊緣的光阻層也可以化學液體進行蝕刻,本揭露對於光阻層的蝕刻方式並未加以限制。In another embodiment of the present disclosure, the photoresist layer remaining on the edge of the wafer 50 can also be etched by a chemical liquid. The present disclosure does not limit the etching manner of the photoresist layer.

在本實施例中,當晶圓50於製程腔體200完成薄膜沈積的製程,並移轉至裝載腔體100a時,上蓋體110可被向上推升,以將晶圓50裝載至腔室115內的支撐載板130的承載面130a上。此外,當晶圓50完成裝載後,上蓋體110可下降至與下座體120結合的原始高度。本實例的緩衝元件150可減緩上蓋體110蓋合於下座體120時所產生的衝擊力量,並在上蓋體110與下座體完成結合後,對遮罩140提供適當的彈性支撐。In the present embodiment, when the wafer 50 is completed in the process of film deposition in the process chamber 200 and transferred to the loading chamber 100a, the upper cover 110 can be pushed up to load the wafer 50 into the chamber 115. The inner support plate 130 is supported on the bearing surface 130a. In addition, after the wafer 50 is loaded, the upper cover 110 can be lowered to the original height combined with the lower body 120. The cushioning member 150 of the present example can reduce the impact force generated when the upper cover 110 is covered by the lower base 120, and provide appropriate elastic support to the cover 140 after the upper cover 110 and the lower base are combined.

詳細而言,彈性件154例如是螺旋彈簧。當上蓋體110蓋合於下座體120上時,彈性件154可分離地抵壓於遮罩140上,以於上蓋體110與遮罩140之間提供緩衝,並對遮罩140提供彈性支撐。In detail, the elastic member 154 is, for example, a coil spring. When the upper cover 110 is closed on the lower base 120, the elastic member 154 can be detachably pressed against the cover 140 to provide cushion between the upper cover 110 and the cover 140 and provide elastic support to the cover 140. .

進一步而言,本實施例的遮罩140具有懸臂部142、145,並且如圖2所示,彈性件154可在上蓋體110與下座體120上下結合時,可分離地抵壓於懸臂部142上。此外,下座體120具有止檔部124,並且止擋部124可接觸遮罩140的懸臂部142。當腔體的上蓋體110與下座體120結合時,遮罩140的懸臂部142可藉由彈性件154的支撐與緩衝來減少懸臂部142與止擋部124之間的接觸應力,並使遮罩140可拆卸地固定於下座體120上。Further, the mask 140 of the present embodiment has the cantilever portions 142, 145, and as shown in FIG. 2, the elastic member 154 can be detachably pressed against the cantilever portion when the upper cover 110 and the lower base 120 are coupled up and down. On 142. Further, the lower body 120 has a stop portion 124, and the stop portion 124 can contact the cantilever portion 142 of the mask 140. When the upper cover 110 of the cavity is combined with the lower base 120, the cantilever portion 142 of the mask 140 can reduce the contact stress between the cantilever portion 142 and the stopper portion 124 by the support and cushioning of the elastic member 154, and The cover 140 is detachably fixed to the lower base 120.

在本實施例中,彈性件154可藉由套筒152的配置,減少彈性件154所需配置的長度。詳細而言,在本實施例中,若如習知所述將彈性件154直接套設於定位柱112上,則為使上蓋體110的底部與遮罩140的懸臂部142之間達到一定的支撐及緩衝的效果,彈性件154的配置長度勢必需要增加。然而,當彈性件154的長度增加時,彈性件154在隨上蓋體110上升及下降的位移過程中,彈性件154將更易在水平橫向上產生變形或左右及前後晃動的情形。當彈性件154左右及前後晃動時,彈性件154會與上蓋體110的壁面以及位於其內緣的定位柱112的表面產生摩擦與碰撞,而造成彈性件154本身、定位柱112的表面或上蓋體110的壁面上的材料組成產生剝落並形成微粒。前述的構件之間摩擦或碰撞所產生的微粒(particle)可能會散落於晶圓50的表面上,而對晶圓50的製程品質產生不良的影響。In the present embodiment, the elastic member 154 can reduce the length of the configuration of the elastic member 154 by the configuration of the sleeve 152. In detail, in the present embodiment, if the elastic member 154 is directly sleeved on the positioning post 112 as described in the prior art, the bottom portion of the upper cover 110 and the cantilever portion 142 of the mask 140 are fixed to a certain extent. The effect of the support and cushioning, the configuration length of the elastic member 154 is inevitably required to increase. However, when the length of the elastic member 154 is increased, the elastic member 154 is more likely to be deformed or left and right and swayed in the horizontal direction during the displacement of the elastic member 154 as it rises and falls. When the elastic member 154 is swayed to the left and right and the front and rear, the elastic member 154 generates friction and collision with the wall surface of the upper cover 110 and the surface of the positioning post 112 at the inner edge thereof, thereby causing the elastic member 154 itself, the surface of the positioning post 112 or the upper cover. The material composition on the wall of the body 110 is spalled and forms particles. Particles generated by friction or collision between the aforementioned members may be scattered on the surface of the wafer 50, which adversely affects the process quality of the wafer 50.

圖3是圖2的製程腔體的部分構件的放大示意圖。請參考圖3,在本實施例中,當彈性件154搭配套筒152進行配置時,彈性件154的配置長度可有效地減少。因此,彈性件154較不易在水平橫向上產生形變或是左右及前後晃動的情形,並且彈性件154與定位柱112之間亦不會產生接觸或碰撞。因此,彈性件154與上蓋體110的壁面以及定位柱112之間因摩擦或碰撞而產生微粒的機會可相對地減少,並且彈性件154也因為長度較短而較不易因受到外力衝擊而變形斷裂。3 is an enlarged schematic view of a portion of the components of the process chamber of FIG. 2. Referring to FIG. 3, in the present embodiment, when the elastic member 154 is disposed with the sleeve 152, the arrangement length of the elastic member 154 can be effectively reduced. Therefore, the elastic member 154 is less likely to be deformed in the horizontal direction or left and right and swayed forward and backward, and there is no contact or collision between the elastic member 154 and the positioning post 112. Therefore, the chance of the particles being generated by the friction or collision between the elastic member 154 and the wall surface of the upper cover 110 and the positioning post 112 can be relatively reduced, and the elastic member 154 is also less likely to be deformed and broken by the impact of the external force because of the short length. .

請再參考圖3,上蓋體110的底部可具有凹溝117,且凹溝117由上蓋體110的底部凹陷進入上蓋體110中。此外,定位柱112可配置於凹溝117中,並且套筒152的長度可大於或等於凹溝117的凹陷深度。在本實施例中,由於套筒的152的長度大於或等於凹溝117的深度,因此,在將定位柱112與套設於其上的套筒152定位配置於凹溝117的溝槽內的同時,彈性件154與凹溝117之間不會產生接觸,進而減少彈性件154及上蓋體110之間因碰撞及摩擦而產生微粒的機會。Referring to FIG. 3 again, the bottom of the upper cover 110 may have a recess 117, and the recess 117 is recessed into the upper cover 110 from the bottom of the upper cover 110. Further, the positioning post 112 may be disposed in the groove 117, and the length of the sleeve 152 may be greater than or equal to the recess depth of the groove 117. In this embodiment, since the length of the sleeve 152 is greater than or equal to the depth of the groove 117, the positioning post 112 and the sleeve 152 sleeved thereon are positioned and disposed in the groove of the groove 117. At the same time, no contact is made between the elastic member 154 and the groove 117, thereby reducing the chance of particles being generated by the collision and friction between the elastic member 154 and the upper cover 110.

請再參考圖2,在本實施例中,電漿可經由進氣口114被導入腔室115中,以對晶圓50的主動面邊緣殘留的光阻進行蝕刻。在本實施例中,電漿例如是氧氣電漿、氮氣電漿或是前述氣體電漿的組合。此外,遮罩140可用來遮蔽電漿,以避免電漿進入晶圓50的主動面上。此外,遮罩140的頂端可配置石英玻璃147,其可延緩電漿中帶正電的粒子與帶負電的粒子重合(recombination)為中性粒子,以增強電漿蝕刻的效果。Referring to FIG. 2 again, in the present embodiment, the plasma can be introduced into the chamber 115 via the air inlet 114 to etch the photoresist remaining on the active surface edge of the wafer 50. In this embodiment, the plasma is, for example, an oxygen plasma, a nitrogen plasma, or a combination of the foregoing gas plasmas. Additionally, the mask 140 can be used to shield the plasma from the plasma entering the active surface of the wafer 50. In addition, the top end of the mask 140 may be provided with quartz glass 147, which may delay the positively charged particles in the plasma to recombination with the negatively charged particles to enhance the effect of plasma etching.

遮罩140的邊緣可配置導角,以將電漿導引至晶圓50的蝕刻區域。舉例而言,如圖2所示,遮罩140的邊緣可藉由導角的配置,將電漿粒子朝晶圓50的主動面邊緣散佈,使得電漿可有效蝕刻晶圓50的邊緣所殘餘的光阻層。在本實施例中,導角的傾斜角度可對應蝕刻區域的大小進行配置。舉例而言,當晶圓50的邊緣的蝕刻面積較大時,導角相對於承載面130a的傾斜角度可隨之增加,以增加電漿於晶圓50的主動面上的蝕刻範圍。相對地,當晶圓50的邊緣的蝕刻區域較小時,遮罩140可相對承載面130a以較為平緩的導角來導引電漿粒子的路徑,以使電漿粒子朝晶圓50的邊緣的方向擴散,以減少電漿於晶圓50的主動面上的蝕刻面積。The edges of the mask 140 can be configured with lead angles to direct the plasma to the etched regions of the wafer 50. For example, as shown in FIG. 2, the edge of the mask 140 can be spread by the plasma particles toward the active surface edge of the wafer 50 by the arrangement of the lead angles, so that the plasma can effectively etch the remaining edge of the wafer 50. Photoresist layer. In this embodiment, the inclination angle of the lead angle can be configured corresponding to the size of the etched area. For example, when the etching area of the edge of the wafer 50 is large, the inclination angle of the conduction angle with respect to the bearing surface 130a may be increased to increase the etching range of the plasma on the active surface of the wafer 50. In contrast, when the etched area of the edge of the wafer 50 is small, the mask 140 can guide the path of the plasma particles with respect to the bearing surface 130a at a relatively gentle lead angle so that the plasma particles are toward the edge of the wafer 50. The direction is diffused to reduce the etched area of the plasma on the active side of the wafer 50.

在本實施例中,遮罩140可連接第一進氣管164,並且例如是氬氣(Ar)的吹掃氣體可經由第一進氣管164導入晶圓50的主動面。此外,本實施例的遮罩140內可另配置噴灑頭(shower head)以將吹掃氣體均勻地分布於晶圓50的主動面上。在本實施例中,第一進氣管164所提供的氬氣可在電漿蝕刻晶圓50的邊緣的光阻殘留物時,對晶圓50被遮罩140遮蔽的部分提供冷卻的效果。此外,裝載腔體100a另可經由第二進氣管126將氮氣(N 2)或氦氣(He)等惰性製程氣體充填入腔室115中,以利相關製程的施作。 In the present embodiment, the mask 140 may be connected to the first intake pipe 164, and a purge gas such as argon (Ar) may be introduced into the active face of the wafer 50 via the first intake pipe 164. In addition, a shower head may be additionally disposed in the mask 140 of the embodiment to uniformly distribute the purge gas on the active surface of the wafer 50. In the present embodiment, the argon gas supplied from the first intake pipe 164 can provide a cooling effect on the portion of the wafer 50 that is shielded by the mask 140 when the photoresist residue at the edge of the wafer 50 is plasma etched. In addition, the loading chamber 100a may further fill an inert process gas such as nitrogen (N 2 ) or helium (He) into the chamber 115 via the second intake pipe 126 to facilitate the application of the related process.

綜上所述,本揭露的多個實例中的裝載腔體及晶圓洗邊裝置的緩衝元件具有套筒以及彈性件,並且彈性件可經由套筒套設於上蓋體的底部的定位柱上。因此,本揭露的多個實施例中的彈性件的配置長度可有效的減少,避免彈性件在上蓋體相對於下座體上升及下降的過程中,彈性件由於本身的長度過長而造成形變或是左右及前後晃動的情形,進而使得彈性件與腔體及定位柱之間產生碰撞或磨擦,而於晶圓或工件表面上產生微粒,並對於晶圓處理的品質造成不良的影響。同時,彈性件也由於套筒的設置以及本身長度的減少,使得彈性件不易因為受外力衝擊而導致形變並斷裂。In summary, the cushioning member of the loading chamber and the wafer edge washing device of the multiple embodiments of the present disclosure has a sleeve and an elastic member, and the elastic member can be sleeved on the positioning post at the bottom of the upper cover body via the sleeve. . Therefore, the arrangement length of the elastic members in the various embodiments of the present disclosure can be effectively reduced, and the elastic members are deformed due to the length of the elastic members being too long due to the length of the upper cover body being raised and lowered relative to the lower seat body. Or the situation of swaying left and right and back and forth, thereby causing collision or friction between the elastic member and the cavity and the positioning post, and generating particles on the surface of the wafer or the workpiece, and adversely affecting the quality of the wafer processing. At the same time, due to the arrangement of the sleeve and the reduction of the length of the sleeve, the elastic member is less likely to be deformed and broken due to impact by an external force.

本發明實施例的一實施例提出一種裝載腔體,其包括:腔體、支撐載板、緩衝元件以及遮罩。腔體包括上蓋體及下座體,且上蓋體與下座體結合而共同形成腔室。上蓋體的底部具有朝下座體的方向垂直延伸的定位柱。支撐載板配置於腔室中並具有承載面,且承載面用以承載工件。緩衝元件耦接固定於定位柱。緩衝元件具有套筒及彈性件,並且套筒的一端與彈性件彼此連接,而套筒的另一端具有開口。套筒經由開口套設於定位柱上。遮罩配置於支撐載版的承載面上。An embodiment of the present invention provides a loading cavity that includes a cavity, a support carrier, a cushioning member, and a mask. The cavity includes an upper cover body and a lower seat body, and the upper cover body and the lower seat body are combined to form a chamber. The bottom of the upper cover has a positioning post that extends vertically in the direction of the lower base. The support carrier is disposed in the chamber and has a bearing surface, and the bearing surface is used to carry the workpiece. The buffer component is coupled to the positioning post. The cushioning member has a sleeve and an elastic member, and one end of the sleeve is coupled to the elastic member, and the other end of the sleeve has an opening. The sleeve is sleeved on the positioning post via the opening. The mask is disposed on the bearing surface of the support plate.

本發明實施例的另一實施例提出一種晶圓洗邊裝置,其包括:裝載腔體、吹掃氣體擴散區以及電漿擴散區。裝載腔體包括腔體、支撐載板、緩衝元件以及遮罩。腔體包括上蓋體及下座體,且上蓋體與下座體結合而共同形成腔室。上蓋體的底部具有朝下座體的方向垂直延伸的定位柱。支撐載板配置於腔室中並具有承載面,且承載面用以承載工件。緩衝元件耦接固定於定位柱。緩衝元件具有套筒及彈性件,並且套筒的一端與彈性件彼此連接,而套筒的另一端具有開口。套筒經由開口套設於定位柱上。吹掃氣體擴散區位於遮罩與承載面之間。電漿擴散區位於未被遮罩遮蔽的部分承載面上。Another embodiment of the present invention provides a wafer edge washing apparatus including: a loading chamber, a purge gas diffusion region, and a plasma diffusion region. The loading cavity includes a cavity, a support carrier, a cushioning element, and a mask. The cavity includes an upper cover body and a lower seat body, and the upper cover body and the lower seat body are combined to form a chamber. The bottom of the upper cover has a positioning post that extends vertically in the direction of the lower base. The support carrier is disposed in the chamber and has a bearing surface, and the bearing surface is used to carry the workpiece. The buffer component is coupled to the positioning post. The cushioning member has a sleeve and an elastic member, and one end of the sleeve is coupled to the elastic member, and the other end of the sleeve has an opening. The sleeve is sleeved on the positioning post via the opening. The purge gas diffusion zone is located between the mask and the load bearing surface. The plasma diffusion zone is located on a portion of the bearing surface that is not obscured by the mask.

本發明實施例的另一實施例提出一種半導體製程設備,其包括晶圓洗邊裝置、製程腔體以及裝卸站。製程腔體配置於晶圓洗邊裝置的一側。裝卸站配置於晶圓洗邊裝置的另一側,以容置待載入或待載出的工件。Another embodiment of the present invention provides a semiconductor process apparatus including a wafer edge washing device, a process chamber, and a loading and unloading station. The process chamber is disposed on one side of the wafer edge washing device. The loading and unloading station is disposed on the other side of the wafer edge washing device to accommodate the workpiece to be loaded or to be carried.

以上概述了多個實施例的特徵,使本領域具有通常知識者可更佳了解本揭露的態樣。本領域具有通常知識者應理解,其可輕易地使用本揭露作為設計或修改其他製程與結構的依據,以實行本文所介紹的實施例的相同目的及/或達到相同優點。本領域具有通常知識者還應理解,這種等效的配置並不悖離本揭露的精神與範疇,且本領域具有通常知識者在不悖離本的精神與範疇的情況下可對本文做出各種改變、置換以及變更。The features of the various embodiments are summarized above, and those of ordinary skill in the art will be able to better understand the aspects of the disclosure. It should be understood by those of ordinary skill in the art that the present disclosure may be used as a basis for designing or modifying other processes and structures to achieve the same objectives and/or the same advantages of the embodiments described herein. It should be understood by those skilled in the art that this equivalent configuration does not depart from the spirit and scope of the disclosure, and those skilled in the art can do this without departing from the spirit and scope of the present invention. Various changes, substitutions, and changes.

10‧‧‧半導體製程設備
50‧‧‧晶圓
100a、100b‧‧‧裝載腔體
110‧‧‧上蓋體
112‧‧‧定位柱
114‧‧‧進氣口
115‧‧‧腔室
117‧‧‧凹溝
120‧‧‧下座體
122‧‧‧排氣口
124‧‧‧止擋部
126‧‧‧第二進氣管
130‧‧‧支撐載板
130a‧‧‧承載面
140‧‧‧遮罩
142、145‧‧‧懸臂部
147‧‧‧石英玻璃
150‧‧‧緩衝元件
152‧‧‧套筒
152a‧‧‧開口
154‧‧‧彈性件
162‧‧‧電漿氣體進氣管
164‧‧‧第一進氣管
200‧‧‧製程腔體
300‧‧‧裝卸站
310‧‧‧機械手臂
312、314‧‧‧晶圓預置區
10‧‧‧Semiconductor process equipment
50‧‧‧ wafer
100a, 100b‧‧‧ loading chamber
110‧‧‧Upper cover
112‧‧‧Positioning column
114‧‧‧Air inlet
115‧‧‧ chamber
117‧‧ ‧ Groove
120‧‧‧ Lower body
122‧‧‧Exhaust port
124‧‧‧stop
126‧‧‧Second intake pipe
130‧‧‧Support carrier
130a‧‧‧ bearing surface
140‧‧‧ mask
142, 145‧‧‧ cantilever
147‧‧‧Quartz glass
150‧‧‧ cushioning element
152‧‧‧ sleeve
152a‧‧‧ openings
154‧‧‧Flexible parts
162‧‧‧Plastic gas intake pipe
164‧‧‧First intake pipe
200‧‧‧Processing cavity
300‧‧‧ loading and unloading station
310‧‧‧ Robotic arm
312, 314‧‧‧ wafer pre-positioning area

圖1是依照本揭露的一實施例的半導體製程設備的示意圖。 圖2是依照本揭露的一實施例的製程腔體的示意圖。 圖3是圖2的製程腔體的部分構件的放大示意圖。1 is a schematic diagram of a semiconductor process device in accordance with an embodiment of the present disclosure. 2 is a schematic illustration of a process chamber in accordance with an embodiment of the present disclosure. 3 is an enlarged schematic view of a portion of the components of the process chamber of FIG. 2.

50‧‧‧晶圓 50‧‧‧ wafer

100a‧‧‧裝載腔體 100a‧‧‧Loading cavity

110‧‧‧上蓋體 110‧‧‧Upper cover

112‧‧‧定位柱 112‧‧‧Positioning column

114‧‧‧進氣口 114‧‧‧Air inlet

115‧‧‧腔室 115‧‧‧ chamber

116‧‧‧止擋部 116‧‧‧stop

120‧‧‧下座體 120‧‧‧ Lower body

122‧‧‧排氣口 122‧‧‧Exhaust port

126‧‧‧第二進氣管 126‧‧‧Second intake pipe

130‧‧‧支撐載板 130‧‧‧Support carrier

130a‧‧‧承載面 130a‧‧‧ bearing surface

140‧‧‧遮罩 140‧‧‧ mask

142、145‧‧‧懸臂部 142, 145‧‧‧ cantilever

147‧‧‧石英玻璃 147‧‧‧Quartz glass

150‧‧‧緩衝元件 150‧‧‧ cushioning element

152‧‧‧套筒 152‧‧‧ sleeve

154‧‧‧彈性件 154‧‧‧Flexible parts

162‧‧‧電漿氣體進氣管 162‧‧‧Plastic gas intake pipe

164‧‧‧第一進氣管 164‧‧‧First intake pipe

Claims (10)

一種裝載腔體,包括: 一腔體,包括一上蓋體及一下座體,且該上蓋體與該下座體可分離地結合並共同形成一腔室,其中該上蓋體的底部具有多個定位柱,且該些定位柱朝該下座體的方向垂直延伸; 一支撐載板,配置於該腔室中,並具有一承載面,用以於承載一工件; 多個緩衝元件,分別耦接固定於該些定位柱,並且該些緩衝元件分別具有一套筒以及一彈性件,其中該套筒的一端與該彈性件彼此連接,而該套筒的另一端具有一開口,且該套筒經由該開口套設於該定位柱上;以及 一遮罩,配置於該支撐載板的該承載面上。A loading chamber includes: a cavity including an upper cover body and a lower seat body, and the upper cover body and the lower seat body are detachably coupled to each other to form a chamber, wherein the bottom portion of the upper cover body has a plurality of positions a column, and the positioning rods extend perpendicularly to the lower body; a supporting carrier plate disposed in the chamber and having a bearing surface for carrying a workpiece; a plurality of buffering elements respectively coupled Fixed to the positioning posts, and the cushioning elements respectively have a sleeve and an elastic member, wherein one end of the sleeve and the elastic member are connected to each other, and the other end of the sleeve has an opening, and the sleeve The opening is sleeved on the positioning post; and a mask is disposed on the bearing surface of the supporting carrier. 如申請專利範圍第1項所述的裝載腔體,更包括一第一進氣管,連接該遮罩,用以將一吹掃氣體導引至該承載面上。The loading chamber of claim 1, further comprising a first air inlet tube connected to the mask for guiding a purge gas to the bearing surface. 如申請專利範圍第1項所述的裝載腔體,其中該遮罩於該承載面上的投影暴露出一部分的該承載面。The loading chamber of claim 1, wherein the projection of the mask on the bearing surface exposes a portion of the bearing surface. 如申請專利範圍第3項所述的裝載腔體,其中該上蓋體更包括一進氣口,貫穿該上蓋體,一電漿經由該進氣口導引進入該腔室中並抵達該部分的該承載面上。The loading chamber of claim 3, wherein the upper cover further comprises an air inlet, through which the plasma is guided into the chamber and reaches the portion through the air inlet. The bearing surface. 如申請專利範圍第1項所述的裝載腔體,其中該上蓋體更包括至少一凹溝,該凹溝由該上蓋體的底部凹陷入該上蓋體中,且該些定位柱配置於該凹溝中,並該套筒的長度大於或等於該凹溝的凹陷深度。The loading chamber of claim 1, wherein the upper cover further comprises at least one groove, the groove is recessed into the upper cover by the bottom of the upper cover, and the positioning posts are disposed in the concave In the groove, and the length of the sleeve is greater than or equal to the depth of the recess of the groove. 如申請專利範圍第1項所述的裝載腔體,其中該彈性件為一螺旋彈簧。The loading chamber of claim 1, wherein the elastic member is a coil spring. 如申請專利範圍第1項所述的裝載腔體,其中該遮罩的邊緣具有一導角。The loading chamber of claim 1, wherein the edge of the mask has a lead angle. 如申請專利範圍第1項所述的裝載腔體,更包括一第二進氣管,連接該下座體的底部,以通過該第二進氣管於該腔室中充填一惰性氣體。The loading chamber of claim 1, further comprising a second intake pipe connected to the bottom of the lower seat to fill the chamber with an inert gas through the second intake pipe. 一種晶圓洗邊裝置,包括: 一裝載腔體,包括: 一腔體,包括一上蓋體及一下座體,且該上蓋體與該下座體可分離地共同形成一腔室,其中該上蓋體的底部具有多個定位柱,且該些定位柱朝該下座體的方向垂直延伸; 一支撐載板,配置於該腔室中,並具有一承載面,用以於承載一工件; 多個緩衝元件,分別耦接固定於該些定位柱,並且該些緩衝元件分別具有一套筒以及一彈性件,其中該套筒的一端與該彈性件彼此連接,而該套筒的另一端具有一開口,該套筒經由該開口套設於該定位柱上;以及 一遮罩,配置於該支撐載板的該承載面上; 一吹掃氣體擴散區,位於該遮罩與該承載面之間;以及 一電漿擴散區,位於未被該遮罩遮蔽的部分該承載面上。A wafer edge washing apparatus comprising: a loading chamber comprising: a cavity comprising an upper cover body and a lower seat body, and the upper cover body and the lower base body detachably together form a chamber, wherein the upper cover The bottom of the body has a plurality of positioning posts, and the positioning posts extend perpendicularly toward the lower body; a supporting carrier plate is disposed in the cavity and has a bearing surface for carrying a workpiece; The buffering members are respectively coupled and fixed to the positioning posts, and the buffering members respectively have a sleeve and an elastic member, wherein one end of the sleeve and the elastic member are connected to each other, and the other end of the sleeve has An opening, the sleeve is sleeved on the positioning post; and a mask disposed on the bearing surface of the supporting carrier; a purge gas diffusion region located at the mask and the bearing surface And a plasma diffusion zone on a portion of the bearing surface that is not covered by the mask. 一種半導體製程設備,包括: 如上述申請專利範圍第9項所述的晶圓洗邊裝置; 一製程腔體,配置於該晶圓洗邊裝置的一側;以及 一裝卸站,配置於該晶圓洗邊裝置的另一側,以容置待載入或待載出的該工件。A semiconductor processing apparatus comprising: the wafer edge washing apparatus according to claim 9; a process chamber disposed on one side of the wafer edge washing apparatus; and a loading station disposed on the crystal The other side of the round edge washing device accommodates the workpiece to be loaded or to be carried.
TW105134486A 2016-10-26 2016-10-26 Load lock chamber, edge bevel removal device and semicondcutor manufacturing equipment TWI594356B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW105134486A TWI594356B (en) 2016-10-26 2016-10-26 Load lock chamber, edge bevel removal device and semicondcutor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW105134486A TWI594356B (en) 2016-10-26 2016-10-26 Load lock chamber, edge bevel removal device and semicondcutor manufacturing equipment

Publications (2)

Publication Number Publication Date
TWI594356B true TWI594356B (en) 2017-08-01
TW201816908A TW201816908A (en) 2018-05-01

Family

ID=60189300

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105134486A TWI594356B (en) 2016-10-26 2016-10-26 Load lock chamber, edge bevel removal device and semicondcutor manufacturing equipment

Country Status (1)

Country Link
TW (1) TWI594356B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200409267A (en) * 2002-11-26 2004-06-01 Taiwan Semiconductor Mfg Gripper for catching wafer in EBR chamber
TW200504237A (en) * 2004-06-14 2005-02-01 Hsiuping Inst Technology The real-time adjustable mechanism of the shielding plate in the sputtering vacuum chamber design
TW201504479A (en) * 2013-03-27 2015-02-01 Lam Res Corp Dense oxide coated component of a plasma processing chamber and method of manufacture thereof
US20160172210A1 (en) * 2014-12-11 2016-06-16 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method
US20160196995A1 (en) * 2015-01-05 2016-07-07 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200409267A (en) * 2002-11-26 2004-06-01 Taiwan Semiconductor Mfg Gripper for catching wafer in EBR chamber
TW200504237A (en) * 2004-06-14 2005-02-01 Hsiuping Inst Technology The real-time adjustable mechanism of the shielding plate in the sputtering vacuum chamber design
TW201504479A (en) * 2013-03-27 2015-02-01 Lam Res Corp Dense oxide coated component of a plasma processing chamber and method of manufacture thereof
US20160172210A1 (en) * 2014-12-11 2016-06-16 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method
US20160196995A1 (en) * 2015-01-05 2016-07-07 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method

Also Published As

Publication number Publication date
TW201816908A (en) 2018-05-01

Similar Documents

Publication Publication Date Title
JP6198043B2 (en) Load port unit and EFEM system
TWI669769B (en) Method of processing substrate and substrate processing apparatus
US8851769B2 (en) Substrate processing method
US20160256901A1 (en) Substrate processing method and substrate processing apparatus
TW201921562A (en) Substrate processing method
TWI594356B (en) Load lock chamber, edge bevel removal device and semicondcutor manufacturing equipment
KR102012605B1 (en) Substrate treatment method and substrate treatment device
US10755961B2 (en) Semiconductor tool with a shield
JP2018164058A (en) Substrate processing method and substrate processing device
JP2022171969A (en) Substrate processing apparatus
CN107851571B (en) Substrate processing method and substrate processing apparatus
JP7419304B2 (en) Back nozzle unit and substrate processing equipment including the back nozzle unit
KR102321240B1 (en) Substrate processing method and substrate processing apparatus
CN107993913B (en) Load cavity and wafer edge-washing device and semi-conductor processing equipment
KR101939905B1 (en) Substrate processing apparatus and substrate processing method
JP6925145B2 (en) Board processing equipment
JP7191591B2 (en) Substrate processing method
JP2017175041A (en) Substrate processing apparatus and substrate processing method
JP7477410B2 (en) Substrate Cleaning Equipment
JP2005217282A (en) Method and apparatus for forming coating film
JP2022061415A (en) Substrate processing apparatus and substrate processing method
KR20240040646A (en) Substrate cleaning apparatus and substrate cleaning method
JP2023013349A (en) Substrate cleaning device, substrate cleaning system, substrate processing system, substrate cleaning method and substrate processing method
JP2023118047A (en) Substrate processing apparatus and substrate processing method
TW202412957A (en) Substrate cleaning apparatus and substrate cleaning method