TWI594026B - Grid polarizing element, optical alignment device, polarizing method and manufacturing method of grid polarizing element - Google Patents

Grid polarizing element, optical alignment device, polarizing method and manufacturing method of grid polarizing element Download PDF

Info

Publication number
TWI594026B
TWI594026B TW103119352A TW103119352A TWI594026B TW I594026 B TWI594026 B TW I594026B TW 103119352 A TW103119352 A TW 103119352A TW 103119352 A TW103119352 A TW 103119352A TW I594026 B TWI594026 B TW I594026B
Authority
TW
Taiwan
Prior art keywords
polarizing element
lattice
film
linear portions
distance
Prior art date
Application number
TW103119352A
Other languages
Chinese (zh)
Other versions
TW201510582A (en
Inventor
Kazuyuki Tsuruoka
Yoshio Kagebayashi
Original Assignee
Ushio Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Electric Inc filed Critical Ushio Electric Inc
Publication of TW201510582A publication Critical patent/TW201510582A/en
Application granted granted Critical
Publication of TWI594026B publication Critical patent/TWI594026B/en

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3025Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3025Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3075Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state for use in the UV
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528Polarisers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528Polarisers
    • G02F1/133548Wire-grid polarisers

Description

網格偏光元件、光配向裝置、偏光方法及網格偏光元件製造方法 Grid polarizing element, optical alignment device, polarization method, and method of manufacturing grid polarizing element

本申請案之發明係關於使用網格偏光元件之偏光技術。 The invention of the present application relates to a polarizing technique using a grid polarizing element.

用以得到偏光光線之偏光元件,為人所知者有偏光太陽眼鏡般之各種以周遭的製品為首之偏光濾光片或偏光薄膜等的光學元件,於液晶顯示器等之顯示裝置中亦被廣泛使用。偏光元件,從擷取偏光光線之方式來看,可分類為數種,其中之一有導線網格偏光元件。 A polarizing element for obtaining polarized light, and an optical element such as a polarizing filter or a polarizing film, which is known as a polarized pair of sunglasses, is widely used in display devices such as liquid crystal displays. use. The polarizing element can be classified into several types in view of the manner in which the polarized light is extracted, and one of them has a wire mesh polarizing element.

導線網格偏光元件,為在透明基板上設置由金屬(導電體)所構成之細微的條紋狀的格點之構造。藉由使格點的間隔較形成偏光之光的波長更窄,而具有偏光元件的功能。直線偏光光線中,對於在格點的長度方向上具有電場成分之偏光光線而言,由於與平坦的金屬等效,所以形成反射,另一方面,對於在垂直於長度方向之方向上具有電場成分之偏光光線而言,由於與僅具有透明基板者等效,所以穿透透明基板而射出。因此,垂直於格點的 長度方向之方向的直線偏光光線,直接從偏光元件中射出。藉由控制偏光元件的姿勢,使格點的長度方向朝向期望方向,可得到偏光光線的軸(電場成分的方向)朝向期望方向之偏光光線。 The wire mesh polarizing element has a structure in which a fine stripe-like lattice formed of a metal (conductor) is provided on a transparent substrate. The function of the polarizing element is obtained by making the interval of the lattice dots narrower than the wavelength of the light that forms the polarized light. In the linearly polarized ray, a polarized ray having an electric field component in the longitudinal direction of the lattice point is equivalent to a flat metal to form a reflection, and on the other hand, has an electric field component in a direction perpendicular to the longitudinal direction. The polarized light is equivalent to the one having only the transparent substrate, and is transmitted through the transparent substrate. Therefore, perpendicular to the grid point The linearly polarized light in the direction of the longitudinal direction is directly emitted from the polarizing element. By controlling the posture of the polarizing element, the longitudinal direction of the lattice point is directed toward the desired direction, and the polarized ray of the axis of the polarized light (the direction of the electric field component) toward the desired direction can be obtained.

以下,就說明上的方便,將在格點的長度方向上具有電場成分之直線偏光光線稱為s偏光光線,將在垂直於長度方向之方向上具有電場成分之直線偏光光線稱為p偏光光線。通常,將電場垂直於入射面(垂直於反射面且包含入射光線與反射光線之面)者稱為s波,將平行者稱為p波,並以格點的長度方向與入射面平行者為前提而如此區域別。 Hereinafter, for convenience, a linearly polarized ray having an electric field component in the longitudinal direction of the lattice point is referred to as an s-polarized ray, and a linearly polarized ray having an electric field component in a direction perpendicular to the longitudinal direction is referred to as a p-polarized ray. . Generally, the electric field is perpendicular to the incident surface (perpendicular to the reflecting surface and includes the plane of the incident ray and the reflected ray), which is called the s-wave, and the parallel is called the p-wave, and the parallel direction of the lattice point is parallel to the incident surface. The premise is such a region.

顯示如此之偏光元件的性能之基本指標,為消光比ER與穿透率TR。消光比ER,為穿透偏光元件之偏光光線的強度中,p偏光光線的強度(Ip)相對於s偏光光線的強度(Is)之比(Ip/Is)。此外,穿透率TR,通常為射出之p偏光光線的能量相對於入射之s偏光光線與p偏光光線的全部能量之比(TR=Ip/(Is+Ip))。理想的偏光元件,其消光比ER=∞,穿透率TR=50%。 The basic indicators showing the performance of such a polarizing element are the extinction ratio ER and the transmittance TR. The extinction ratio ER is the ratio (Ip/Is) of the intensity (Ip) of the p-polarized light to the intensity (Is) of the s-polarized light in the intensity of the polarized light that penetrates the polarizing element. Further, the transmittance TR is usually a ratio of the energy of the emitted p-polarized light to the total energy of the incident s polarized light and the p-polarized light (TR = Ip / (Is + Ip)). An ideal polarizing element has an extinction ratio ER=∞ and a transmittance TR=50%.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2011-8172號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-8172

關於光的應用,較多係如以顯示器技術所代表般之應用可見區域的光之情形,而在光通訊等領域中,則應用紅外區域的光。另一方面,將光應用作為能量之情形亦多,此時,較多係應用紫外區域的光。例如為微影成像中之光阻的曝光(感光處理)或紫外線硬化型樹脂的硬化處理等。因此,於偏光光線的應用中,在將偏光光線應用作為能量之情形時,紫外區域的波長之偏光光線亦為必要。 Regarding the application of light, there are many cases where the light in the visible region is applied as represented by the display technology, and in the field of optical communication and the like, the light in the infrared region is applied. On the other hand, there are many cases where light is applied as energy, and in this case, light in the ultraviolet region is often applied. For example, exposure (photosensitive treatment) of photoresist in lithography imaging or hardening treatment of ultraviolet curable resin. Therefore, in the application of polarized light, when polarized light is applied as energy, polarized light of a wavelength in the ultraviolet region is also necessary.

顯示更具體的一例時,於液晶顯示器的製程中,近年來係逐漸採用被稱為光配向之技術。該技術為藉由光照射而得到液晶顯示器所需之配向膜。當將紫外區域的偏光光線照射在聚醯亞胺般之樹脂製的膜時,膜中的分子被排列配置在偏光光線的方向,而得到配向膜。與稱為磨刷之機械配向處理相比,可得到高性能的配向膜,因此已逐漸被廣泛採用在高畫質液晶顯示器的製程中。 When a more specific example is shown, in the process of liquid crystal display, in recent years, a technique called optical alignment has been gradually adopted. This technique is to obtain an alignment film required for a liquid crystal display by light irradiation. When the polarized light in the ultraviolet region is irradiated onto a film made of a polyimide-like resin, molecules in the film are arranged in the direction of the polarized light to obtain an alignment film. Compared with a mechanical alignment process called a brush, a high-performance alignment film can be obtained, and thus it has been widely used in the process of a high-definition liquid crystal display.

如此,於某些用途中,乃須得到更短波長區域的偏光光線,因此需使用此類偏光元件。然而,關於使該短波長區域的光形成偏光之偏光元件,幾乎未被研究,且已達實用化之製品亦未被推出。所謂短波長區域,為可見的短波長側(例如450nm以下)至紫外區域之波長區域。 Thus, in some applications, it is necessary to obtain polarized light in a shorter wavelength region, and thus such a polarizing element is required. However, a polarizing element that polarizes light in the short-wavelength region has been hardly studied, and a product that has been put into practical use has not been introduced. The short-wavelength region is a wavelength region on the short-wavelength side (for example, 450 nm or less) to the ultraviolet region.

可見光用途,係較常使用整合樹脂層的吸收軸之偏光薄膜。然而,紫外線用途,由於樹脂會因紫外線而在短期間劣化,所以無法使用。 For visible light use, a polarizing film which is an absorption axis of an integrated resin layer is often used. However, in ultraviolet light applications, since the resin deteriorates in a short period of time due to ultraviolet rays, it cannot be used.

使紫外區域的光形成偏光時,可使用採用方解石之稜鏡偏光元件。然而,稜鏡偏光元件雖然適合於如雷射般之將偏光光線照射在狹窄區域之用途,但並不適合於如光配向般之將偏光光線照射在某種程度較大的區域之用途。 When the light in the ultraviolet region is polarized, a polarizing element using calcite can be used. However, although the polarizing element is suitable for the purpose of irradiating polarized light in a narrow region like a laser, it is not suitable for the purpose of irradiating polarized light to a relatively large area as in optical alignment.

可將偏光光線照射在某種程度較大的區域者,為前述導線網格偏光元件。可排列複數個導線網格偏光元件並將偏光光線照射在更寬廣區域。 The polarized light can be irradiated to a certain extent to a certain extent, and is the aforementioned wire mesh polarizing element. A plurality of wire grid polarizing elements can be arranged and the polarized light can be illuminated over a wider area.

導線網格偏光元件中,條紋狀格點的材料,係使用鎢、銅、鋁等。於紫外線用途的導線網格偏光元件中,較佳係使用即使在紫外區域中亦具有高反射率之鋁。然而,導線網格偏光元件,對於較約500nm更長之可見區域的光,雖然顯示出某程度的高消光比及穿透率,但隨著波長縮短,消光比或穿透率從400nm附近急遽降低。該理由雖仍未完全明瞭,但可推測為起因於鋁的光學性質。 In the wire mesh polarizing element, the material of the stripe lattice is made of tungsten, copper, aluminum or the like. In the wire mesh polarizing element for ultraviolet rays, it is preferred to use aluminum having high reflectance even in the ultraviolet region. However, the wire grid polarizing element, although showing a certain high extinction ratio and transmittance for a light having a visible region longer than about 500 nm, is rapidly imminent in the extinction ratio or transmittance from around 400 nm as the wavelength is shortened. reduce. Although this reason is not fully understood, it is presumed to be due to the optical properties of aluminum.

如此,於光配向般之光程序的用途中,係要求一種可將從可見短波長區域至紫外區域的偏光光線照射在某種程度寬廣的區域之具實用性的偏光元件,但消光比和穿透率之基本性能優異之偏光元件仍未被開發出。提高配向處理的品質時,必須僅照射朝向既定方向之偏光光線(消光比的提升),提高生產性(處理效率)時,必須使用穿透率更高之偏光元件。 Thus, in the use of the light-aligning light program, a practical polarizing element that can illuminate a polarized light from a visible short-wavelength region to an ultraviolet region to a certain extent is required, but the extinction ratio and wear A polarizing element having excellent basic performance of transmittance has not been developed. When the quality of the alignment treatment is improved, it is necessary to irradiate only the polarized light toward the predetermined direction (the increase in the extinction ratio), and when the productivity (processing efficiency) is improved, it is necessary to use a polarizing element having a higher transmittance.

本申請案之發明係考量此課題而創作出,其係具有下列意義,亦即提供一種可將從可見短波長區域至紫外區域 的偏光光線照射至某種程度寬廣的區域,且在消光比和穿透率之基本性能上具有優異特性之偏光元件。 The invention of the present application has been created in consideration of this subject, and has the following meanings, that is, providing a region from a visible short wavelength region to an ultraviolet region. The polarized light is irradiated to a certain extent and has a polarizing element having excellent characteristics in terms of extinction ratio and transmittance.

為了解決上述課題,本申請案之請求項1所述之發明,為一種由透明基板與設置在透明基板上之條紋狀的格點所構成,並且使在格點的材質中折射率實部n大於消光係數k之波長的光形成偏光之網格偏光元件,格點係由非晶質狀的矽所形成,於構成格點之各線狀部中,將與一方側之相鄰的線狀部之距離設為t,與另一方側之相鄰的線狀部之距離設為T時,格點週期性地具有實質上t<T之部分。 In order to solve the above problems, the invention described in claim 1 of the present application is composed of a transparent substrate and stripe-like lattice dots provided on the transparent substrate, and the refractive index real part in the material of the lattice point n The light having a wavelength larger than the extinction coefficient k forms a polarized grid polarizing element, and the lattice point is formed of an amorphous crucible, and among the linear portions constituting the lattice point, a linear portion adjacent to one side is formed When the distance is set to t, and the distance from the adjacent linear portion on the other side is T, the lattice point periodically has a portion substantially t < T.

此外,為了解決上述課題,請求項2所述之發明,於前述請求項1之構成中,具有:前述折射率實部n大於消光係數k之波長為330nm以上之構成。 Further, in the invention of claim 2, the invention of claim 2 includes a configuration in which the refractive index real part n is larger than the extinction coefficient k and the wavelength is 330 nm or more.

此外,為了解決上述課題,請求項3所述之發明,於前述請求項1或2之構成中,具有:將前述各線狀部之寬度的平均值設為w時,於前述t<T之部分上,為t/T>0.0159w+0.3735的關係之構成。 Further, in the invention of claim 3, the invention of claim 1 or 2, wherein the average value of the widths of the linear portions is w, the portion of the above t<T Above, the composition of the relationship of t/T>0.0159w+0.3735.

此外,為了解決上述課題,請求項4所述之發明,於前述請求項1或2之構成中,前述格點,當在沿著前述透明基板的表面之方向且為垂直於前述線狀部的長度方向之方向上觀看時,兩個前述線狀部隔著較寬距離T排列之部分並不具有呈連續之處。 According to the invention of claim 1 or 2, in the above-mentioned claim 1 or 2, the grid point is perpendicular to the linear portion in a direction along a surface of the transparent substrate. When viewed in the direction of the longitudinal direction, the portions of the two aforementioned linear portions that are arranged with a wide distance T are not continuous.

此外,為了解決上述課題,請求項5所述之發明為一種光配向裝置,其係具有下列構成:具備:光源、與請求項1至4中任一項所述之網格偏光元件,網格偏光元件被配置在配置有光配向用的膜材之照射區域與光源之間。 In addition, in order to solve the above problem, the invention of claim 5 is a light alignment device having a light source, a mesh polarizing element according to any one of claims 1 to 4, and a mesh. The polarizing element is disposed between the irradiation region where the film for photoalignment is disposed and the light source.

此外,為了解決上述課題,請求項6所述之發明,為一種使用由透明基板與設置在透明基板上之條紋狀的格點所構成之網格偏光元件,以使在格點的材質中折射率實部n大於消光係數k之波長的光形成偏光之偏光方法,格點係由非晶質狀的矽所形成,於構成格點之各線狀部中,將與一方側之相鄰的線狀部之距離設為t,與另一方側之相鄰的線狀部之距離設為T時,格點週期性地具有實質上t<T之部分。 Further, in order to solve the above problems, the invention described in claim 6 is a mesh polarizing element comprising a transparent substrate and stripe-shaped lattice dots provided on the transparent substrate to refract the material in the lattice point. A polarizing method in which the real part n is larger than the wavelength of the extinction coefficient k to form a polarized light, and the lattice point is formed by an amorphous crucible, and among the linear portions constituting the lattice point, a line adjacent to one side is formed When the distance between the portions is t and the distance from the adjacent linear portion on the other side is T, the lattice points periodically have a portion substantially t < T.

此外,為了解決上述課題,請求項7所述之發明,於前述請求項6之構成中,具有:前述折射率實部n大於消光係數k之波長為330nm以上之構成。 In the invention of claim 7, the invention of claim 7 has a configuration in which the refractive index real part n is larger than the extinction coefficient k and the wavelength is 330 nm or more.

此外,為了解決上述課題,請求項8所述之發明,於前述請求項6或7之構成中,具有:將前述各線狀部之寬度的平均值設為w時,於前述t<T之部分上,為t/T>0.0159w+0.3735的關係之構成。 In the above-mentioned claim 6 or 7, the invention of claim 6 or 7 is characterized in that, when the average value of the widths of the linear portions is w, the portion of the above t<T Above, the composition of the relationship of t/T>0.0159w+0.3735.

此外,為了解決上述課題,請求項9所述之發明為一種網格偏光元件製造方法,其係用以製造:由透明基板與設置在透明基板上之條紋狀的格點所構成,於構成格點之各線狀部中,將與一方側之相鄰的線狀部之間隙的距離設為t,與另一方側之相鄰的線狀部之間隙的距離設為T 時,格點週期性地具有實質上t<T之部分的網格偏光元件,此網格偏光元件製造方法具有:於透明基板上製作中間薄膜之中間薄膜製作步驟、使中間薄膜形成圖型而形成由多數個中間線狀部所構成之條紋狀之微影成像步驟、於在微影成像步驟中形成為條紋狀之中間薄膜之各溝槽的側面上製作格點用薄膜之格點用薄膜製作步驟、以及去除中間薄膜而藉由格點用薄膜來形成前述各線狀部之中間薄膜去除步驟;微影成像步驟,係於形成有前述距離t的間隙之位置上,以相當於該距離t之寬度L1形成各中間線狀部,並且將各中間線狀部的開離間隔形成為將前述線狀部的寬度加上前述距離T而成距離L2之步驟。 Further, in order to solve the above problems, the invention described in claim 9 is a method of manufacturing a grid polarizing element for manufacturing a transparent substrate and stripe-like lattice dots provided on the transparent substrate. In each of the linear portions of the dots, the distance from the gap between the adjacent linear portions on one side is t, and the distance from the gap between the adjacent linear portions on the other side is T. When the grid point periodically has a grid polarizing element having a substantial portion of t<T, the grid polarizing element manufacturing method has the steps of: forming an intermediate film on the transparent substrate, and forming the intermediate film into a pattern. Forming a stripe-shaped lithography imaging step formed by a plurality of intermediate linear portions, and forming a lattice film for a lattice film on a side surface of each of the grooves formed as a stripe-shaped intermediate film in the lithography imaging step a manufacturing step and an intermediate film removing step of forming the aforementioned linear portions by using a film for removing the intermediate film; the lithographic imaging step is at a position where the gap of the distance t is formed to correspond to the distance t The width L1 forms each intermediate linear portion, and the opening distance of each intermediate linear portion is formed by adding the width T of the linear portion to the distance L2.

如以下所說明般,根據本申請案之各請求項的發明,為一種使在格點的材質中折射率實部n大於消光係數k之波長的光形成偏光之網格偏光元件中,格點由非晶質狀的矽所形成,於構成格點之各線狀部中,將與一方側之相鄰的線狀部之距離設為t,與另一方側之相鄰的線狀部之距離設為T時,格點週期性地具有實質上t<T之部分,所以可在不會使穿透率大幅降低下提升消光比。因此可照射品質更佳之偏光光線。 As described below, the invention according to the claims of the present application is a grid polarizing element that forms a polarized light in a material of a lattice point in which the real part n of the refractive index is larger than the wavelength of the extinction coefficient k, It is formed of an amorphous crucible, and the distance between the linear portions adjacent to one side of each of the linear portions constituting the lattice point is t, and the distance from the adjacent linear portion of the other side is When T is set, the lattice point periodically has a portion of substantially t < T, so that the extinction ratio can be increased without greatly reducing the transmittance. Therefore, it is possible to illuminate a better quality polarized light.

此外,根據請求項4所述之發明,除了上述效果之外,由於以較寬的開離間隔T使線狀部排列之部分不具有呈連續之處,所以不會使消光比降低。 Further, according to the invention of claim 4, in addition to the above-described effects, since the portions where the linear portions are arranged at a wide opening interval T do not have a continuous portion, the extinction ratio is not lowered.

此外,根據請求項5所述之發明,除了上述效果之外,由於能夠一邊以高能量照射品質佳之偏光光線一邊進行光配向,所以能夠以高生產性得到良質的光配向膜。 Further, according to the invention of claim 5, in addition to the above-described effects, since the optical alignment can be performed while irradiating the polarized light of high quality with high energy, it is possible to obtain a favorable optical alignment film with high productivity.

此外,根據請求項9所述之發明,於微影成像步驟中,於形成有距離t的間隙之位置上,以相當於該距離t之寬度L1形成各中間線狀部,並且將各中間線狀部的開離間隔形成為將線狀部的寬度加上距離T而成距離L2,所以可容易地製造基本性能優異之網格偏光元件。 Further, according to the invention of claim 9, in the lithography imaging step, at the position where the gap of the distance t is formed, each intermediate line portion is formed with a width L1 corresponding to the distance t, and each intermediate line is formed The opening and closing interval of the portion is formed by adding the distance T to the width of the linear portion by a distance L2, so that the grid polarizing element having excellent basic performance can be easily manufactured.

1‧‧‧透明基板 1‧‧‧Transparent substrate

2‧‧‧格點 2‧‧ ‧ points

21‧‧‧線狀部 21‧‧‧Linear

3‧‧‧中間薄膜 3‧‧‧Intermediate film

4‧‧‧格點用薄膜 4‧‧ ‧ film for grid

5‧‧‧光源 5‧‧‧Light source

6‧‧‧反射鏡 6‧‧‧Mirror

7‧‧‧網格偏光元件 7‧‧‧Grid polarizing elements

10‧‧‧工件 10‧‧‧Workpiece

第1圖係示意顯示本申請案發明的實施形態之網格偏光元件之立體概略圖。 Fig. 1 is a schematic perspective view showing a grid polarizing element according to an embodiment of the present invention.

第2圖係顯示在本發明者們所進行之實驗中所製作之非晶矽的光學常數之概略圖。 Fig. 2 is a schematic view showing optical constants of amorphous germanium produced in experiments conducted by the inventors.

第3圖係模擬出實施形態之網格偏光元件之電磁波的傳輸狀況之結果之圖。 Fig. 3 is a view showing the result of simulating the transmission state of electromagnetic waves of the grid polarizing element of the embodiment.

第4圖係在具有第2圖所示的光學常數之非晶矽中,將使用波長設為254nm時,模擬出穿透率及消光比相對於偏向比t/T如何變化之結果之圖。 Fig. 4 is a graph showing the results of how the transmittance and the extinction ratio change with respect to the deflection ratio t/T when the wavelength used is 254 nm in the amorphous crucible having the optical constant shown in Fig. 2.

第5圖係顯示鋁的光學常數之圖。 Figure 5 is a graph showing the optical constants of aluminum.

第6圖係當採用在具有第5圖所示的光學常數之鋁作為格點2的材質時,模擬出改變偏向比t/T時穿透率及消光比如何變化之結果之圖。 Fig. 6 is a graph showing the results of changing the transmittance and the extinction ratio when the deflection ratio t/T is changed when the aluminum having the optical constant shown in Fig. 5 is used as the material of the lattice point 2.

第7圖係示意顯示實施形態之網格偏光元件中,消光比提升的理由之立體概略圖。 Fig. 7 is a perspective schematic view showing the reason why the extinction ratio is improved in the grid polarizing element of the embodiment.

第8圖係顯示確認到x方向磁場成分Hx的起伏之模擬結果之圖。 Fig. 8 is a view showing a simulation result of confirming the fluctuation of the magnetic field component Hx in the x direction.

第9圖係示意顯示藉由x方向磁場成分Hx的起伏(旋轉)而新產生電場Ey之模樣之正視剖面概略圖。 Fig. 9 is a schematic front cross-sectional view showing a pattern in which an electric field Ey is newly generated by the undulation (rotation) of the x-direction magnetic field component Hx.

第10圖係探討使用非晶矽製的格點2之網格偏光元件的最適構造之結果之圖。 Fig. 10 is a view showing the results of an optimum structure of a grid polarizing element using lattice 2 of amorphous germanium.

第11圖係顯示實施形態之網格偏光元件的製造方法之概略圖。 Fig. 11 is a schematic view showing a method of manufacturing the grid polarizing element of the embodiment.

第12圖係顯示實施形態之網格偏光元件的其他製造方法之概略圖。 Fig. 12 is a schematic view showing another manufacturing method of the grid polarizing element of the embodiment.

第13圖係顯示藉由第11圖的製造方法所製造之網格偏光元件與藉由第12圖的製造方法所製造之網格偏光元件之形狀的相異之概略圖。 Fig. 13 is a schematic view showing the difference between the shape of the grid polarizing element manufactured by the manufacturing method of Fig. 11 and the shape of the grid polarizing element manufactured by the manufacturing method of Fig. 12.

第14圖係顯示實施形態之網格偏光元件的使用例,為裝載網格偏光元件之光配向裝置之剖面概略圖。 Fig. 14 is a schematic cross-sectional view showing an example of use of the mesh polarizing element of the embodiment, which is an optical alignment device for loading a grid polarizing element.

接著說明用以實施本申請案發明之形態(實施形態)。 Next, a mode (embodiment) for carrying out the invention of the present application will be described.

第1圖係示意顯示本申請案發明的實施形態之網格偏光元件之立體概略圖。第1圖所示之網格偏光元件,主要是由透明基板1與設置在透明基板1上之格點2所構成。實施形態之偏光元件,雖然具有類似於導線網格偏光元件之構造,但如後述般,格點2並非導電體(導線),故僅稱為網格偏光元件。 Fig. 1 is a schematic perspective view showing a grid polarizing element according to an embodiment of the present invention. The mesh polarizing element shown in Fig. 1 is mainly composed of a transparent substrate 1 and a lattice 2 provided on the transparent substrate 1. The polarizing element of the embodiment has a structure similar to a wire mesh polarizing element. However, as will be described later, the lattice point 2 is not a conductor (wire), and is therefore simply referred to as a grid polarizing element.

透明基板1,就相對於使用波長(使用偏光元件形成偏光元件之光的波長)具有充分的穿透性之涵義而言,稱為「透明」。此實施形態中,由於將紫外區域的光假定為使用波長,所以採用石英玻璃(例如合成石英)作為透明基板1的材質。 The transparent substrate 1 is referred to as "transparent" insofar as it has sufficient transparency with respect to the wavelength of use (the wavelength of light in which the polarizing element is formed using the polarizing element). In this embodiment, since the light in the ultraviolet region is assumed to be the wavelength of use, quartz glass (for example, synthetic quartz) is used as the material of the transparent substrate 1.

格點2,如第1圖所示,係由平行地延伸之多數條線狀部21所構成之條紋狀。各線狀部21由非晶質狀的矽所形成。此外,於格點2中,各線狀部21偏向存在。亦即,於各線狀部21中,將與一方側之相鄰的線狀部21之距離設為t,與另一方側之相鄰的線狀部21之距離設為T時,週期性地具有實質上t<T之部分。以下,就說明上的簡便,將t/T稱為偏向比。 The lattice point 2, as shown in Fig. 1, is formed in a stripe shape composed of a plurality of linear portions 21 extending in parallel. Each of the linear portions 21 is formed of an amorphous crucible. Further, in the lattice point 2, each of the linear portions 21 is biased to exist. In other words, in each of the linear portions 21, the distance from the linear portion 21 adjacent to one side is t, and when the distance from the adjacent linear portion 21 on the other side is T, periodically Has a portion of substantially t < T. Hereinafter, the simplicity of the description will be described, and t/T will be referred to as a deflection ratio.

上述說明中,所謂「實質上t<T之部分」,為一方側的開離距離t與另一方側的開離距離T實質上為不同之意。所謂「實質上」,乃不包含因製造上的變動所產生之距離的相異之涵義,為可發揮後述作用而意圖性地構成為t≠T之涵義。 In the above description, the term "substantially t < T" means that the opening distance t on one side and the opening distance T in the other side are substantially different. The term "substantially" does not include the meaning of the difference in the distance caused by the change in manufacturing, and is intended to be the meaning of t≠T in order to exert the effect described later.

此外,所謂「週期性」,為並非隨機的程度之意。當 t≠T為因製造上的變動所產生時,雖成為隨機,但由於可發揮後述作用而意圖性地構成為t≠T,故為週期性。此時之週期性,為沿著透明基板1的表面在垂直於格點2的長度方向之方向上觀看時,t≠T的部分週期性地存在者。 In addition, the so-called "periodicity" means not the degree of randomness. when When t≠T is generated due to a change in manufacturing, it is random, but it is intentionally configured as t≠T because it can exhibit the effect described later, and therefore is periodic. The periodicity at this time is such that a portion of t≠T periodically exists when viewed along the direction perpendicular to the longitudinal direction of the lattice point 2 along the surface of the transparent substrate 1.

此實施形態之網格偏光元件的構成,為本發明者們對於在從可見短波長區域至紫外區域之區域(以下總稱為短波長區域)中,可得到更高的消光比與穿透率之網格偏光元件的構成為何種構成者進行精心探討之成果。 The configuration of the mesh polarizing element of this embodiment is such that a higher extinction ratio and transmittance can be obtained in the region from the visible short-wavelength region to the ultraviolet region (hereinafter collectively referred to as a short-wavelength region). The composition of the grid polarizing element is the result of careful discussion by the constituents.

本發明者們,係對於在短波長區域中可得到消光比與穿透率之網格偏光元件,尤其是格點2的構造或材料進行精心探討,結果得知根據與先前的導線網格偏光元件不同之思考方法來選擇格點2的材料或構造者乃為有效。 The present inventors have carefully studied the structure or material of the grid polarizing element, especially the grid point 2, in which the extinction ratio and the transmittance can be obtained in a short-wavelength region, and as a result, it is known that the grid is polarized according to the previous wire grid. It is effective to select the material or constructor of the grid 2 by thinking differently.

先前的導線網格偏光元件,亦稱為反射型網格偏光元件,係使用反射率高之金屬作為格點,並藉由使在格點的長度方向上具有電場成分之直線偏光光線反射而不會穿透透明基板1者。於該思考方式之網格偏光元件中,如前述般,於更短的波長區域中,消光比和穿透率之基本性能的提升有其侷限。 The prior wire grid polarizing element, also known as a reflective mesh polarizing element, uses a metal having a high reflectance as a lattice point and reflects by linearly polarized light having an electric field component in the length direction of the lattice point. Those who will penetrate the transparent substrate 1. In the grid polarizing element of this mode of thinking, as described above, in the shorter wavelength region, the improvement in the basic performance of the extinction ratio and the transmittance has limitations.

本申請案之發明者們,與如此之先前的導線網格偏光元件的思考方式不同,乃思索出可稱為吸收型網格偏光元件之思考方式。雖稱為吸收型,但其並非應用如可見光用途的偏光薄膜等所看到之依據高分子所進行之光的吸收,而是應用依據電磁感應現象所形成之光的衰減者。 The inventors of the present application have different ways of thinking about such a prior art wire mesh polarizing element, and are thinking about a way of thinking that can be called an absorbing mesh polarizing element. Although it is called an absorption type, it is not applied to the absorption of light by a polymer, such as a polarizing film for visible light use, but by the attenuation of light formed by an electromagnetic induction phenomenon.

眾所皆知,於金屬般之導電性介質中之光的傳輸中,折射率係作為複折射率來處理。為了將複折射率與通常的折射率區分而設為n'時,複折射率n'可由下列式1所示。 It is well known that in the transmission of light in a metallic conductive medium, the refractive index is treated as a complex refractive index. In order to distinguish the complex refractive index from the normal refractive index and set it as n', the complex refractive index n' can be expressed by the following formula 1.

【數1】 n'= n-ik (式1) [Number 1] n ' = n - ik (Formula 1)

式1中,n為複折射率的實部(以下稱為折射率實部),k為所謂的消光係數。本發明者們所思索出之應用依據電磁感應現象所形成之光的衰減之網格偏光元件,在採用折射率實部n大於消光係數k之不均等的網格構造時可得到。 In Formula 1, n is a real part of the complex refractive index (hereinafter referred to as a real part of the refractive index), and k is a so-called extinction coefficient. The mesh polarizing element to which the inventors have considered the attenuation of light formed by the electromagnetic induction phenomenon can be obtained by using a mesh structure in which the real part n of the refractive index is larger than the extinction coefficient k.

首先說明於實施形態之網格偏光元件中被用作為格點材質之非晶矽的複折射率,與作為比較例之鋁的複折射率。第2圖係顯示在本發明者們所進行之實驗中所製作之非晶矽膜的光學常數(折射率實部n、消光係數k)之概略圖。 First, the complex refractive index of the amorphous germanium used as the lattice material in the grid polarizing element of the embodiment and the complex refractive index of aluminum as a comparative example will be described. Fig. 2 is a schematic view showing the optical constant (refractive index real part n, extinction coefficient k) of the amorphous ruthenium film produced in the experiment conducted by the inventors.

第2圖所示之光學常數的非晶矽膜,係藉由濺鍍而形成於石英製的透明基板1上,成膜溫度為25℃,膜厚約100nm。如第2圖所示,非晶矽膜,其n與k的大小以約330nm的波長為交界而逆轉。亦即,在較約330nm短之波長區域中,折射率實部n小於消光係數k,在較330nm以上之波長區域中,n大於k。n>k的關係,至400nm為止的紫外區域中仍不變,此外,雖然圖中未顯示,但在超過較400nm更長之450nm之可見區域中亦 相同。 The amorphous germanium film having the optical constant shown in Fig. 2 was formed on the transparent substrate 1 made of quartz by sputtering, and the film formation temperature was 25 ° C, and the film thickness was about 100 nm. As shown in Fig. 2, the amorphous germanium film has a size of n and k which is reversed at a wavelength of about 330 nm. That is, in a wavelength region shorter than about 330 nm, the real part n of the refractive index is smaller than the extinction coefficient k, and n is larger than k in a wavelength region of more than 330 nm. The relationship of n>k remains unchanged in the ultraviolet region up to 400 nm. In addition, although not shown in the figure, it is also in the visible region of 450 nm longer than 400 nm. the same.

本發明者們所思索出之吸收型網格偏光元件,於n>k的關係中可有效地發揮功能。亦即,於顯示出第2圖的光學常數之非晶矽膜中,在較330nm更長的波長側使用時可有效地發揮功能。在330nm以上的範圍內可選擇任意的波長,惟在此將365nm設為使用波長來說明一例。365nm中,非晶矽之n=4.03,k=3.04。 The absorbing mesh polarizing element considered by the inventors can effectively function in the relationship of n>k. In other words, in the amorphous tantalum film which exhibits the optical constant of Fig. 2, it functions effectively when used on a wavelength side longer than 330 nm. An arbitrary wavelength can be selected in the range of 330 nm or more, but an example is described by using 365 nm as the wavelength to be used. In 365 nm, n = 4.03, k = 3.04.

本發明者們係對於在將具有此n及k之非晶矽用作為格點2的材質時,模擬出穿透率和消光比如何變化。以下說明該結果。 The present inventors simulated how the transmittance and the extinction ratio change when the amorphous enadium having n and k is used as the material of the lattice point 2. The result is explained below.

第3圖係模擬出實施形態之網格偏光元件之電磁波的傳輸狀況之結果之圖。第3圖中,係假定藉由第2圖所示之矽薄膜來構成第1圖所示之網格偏光元件之情形,並模擬解析出當改變各種偏向比t/T時,穿透率及消光比如何變化。第3圖中的(1)表示穿透率,(2)表示消光比。於第3圖的模擬中,係使用RCWA(Rigorous Coupled-Wave Analysis;嚴格耦合波分析)法,使用美國國立標準技術研究所(NIST)所發布之軟體(http://physics.nist.gov/Divisions/Div844/facilities/scatmech/html/grating.htm),而算出各t/T中之穿透率及消光比。 Fig. 3 is a view showing the result of simulating the transmission state of electromagnetic waves of the grid polarizing element of the embodiment. In Fig. 3, it is assumed that the grid polarizing element shown in Fig. 1 is formed by the tantalum film shown in Fig. 2, and the transmittance and the transmittance are changed when the various deflection ratios t/T are changed. How does the extinction ratio change. (1) in Fig. 3 shows the transmittance, and (2) shows the extinction ratio. In the simulation of Figure 3, the RCWA (Rigorous Coupled-Wave Analysis) method is used, and the software released by the National Institute of Standards and Technology (NIST) is used (http://physics.nist.gov/ Divisions/Div844/facilities/scatmech/html/grating.htm), and the transmittance and extinction ratio in each t/T were calculated.

如第2圖所示,折射率實部n和消光係數k為因波長的不同而不同之值,但如前述般,波長設為365nm,n=4.03,k=3.04。關於介電常數或磁導率,可從 該n及k預先計算並代入。此外,格點2的寬度W,於10~30nm之間以5nm間隔改變,但高度為170nm維持為一定。此外,於10~30nm之間的各格點寬度W中,改變偏向比t/T。具體而言,偏向比t/T=1時,以t=T=90nm者為起點,並以經常滿足t+T=180nm之方式,降低t並增大T以改變t/T。 As shown in Fig. 2, the real part n of the refractive index and the extinction coefficient k are different values depending on the wavelength. However, as described above, the wavelength is 365 nm, n = 4.03, and k = 3.04. Regarding the dielectric constant or magnetic permeability, The n and k are pre-computed and substituted. Further, the width W of the lattice point 2 is changed at intervals of 5 nm between 10 and 30 nm, but the height is maintained at 170 nm. Further, in the width W of each lattice point between 10 and 30 nm, the deflection ratio t/T is changed. Specifically, when the deflection ratio t/T=1, starting from t=T=90 nm, and t is often satisfied by t+T=180 nm, T is increased and T is changed to change t/T.

第3圖(1)中,係以t/T=1時(未偏向存在時)之穿透率為1,並以相對於此之相對值來表示t/T未達1時之穿透率。第3圖(2)的消光比亦相同,以t/T=1時之值為1之情形時的相對值來表示。 In Fig. 3 (1), the transmittance at t/T = 1 (when there is no bias) is 1, and the relative value is used to indicate the transmittance when t/T is less than 1. . The extinction ratio of Fig. 3 (2) is also the same, and is expressed as a relative value when the value of t/T = 1 is 1.

如第3圖(1)所示,當t/T未達1時,與t/T=1時相比,穿透率雖然降低,但在10~30nm的格點寬度W中,若t/T=1~0.3之程度的範圍,則穿透率不會大幅降低。 As shown in Fig. 3 (1), when t/T is less than 1, the transmittance is lower than that at t/T = 1, but in the lattice width W of 10 to 30 nm, if t/ When the range of T=1 to 0.3, the penetration rate is not greatly lowered.

另一方面,如第3圖(2)所示,關於消光比,可確認到在格點寬度w為25nm以下的條件中,藉由使t/T未達1,與t/T=1時相比可顯著地提升。 On the other hand, as shown in Fig. 3 (2), it is confirmed that the extinction ratio is such that t/T does not reach 1 and t/T = 1 in the condition that the lattice width w is 25 nm or less. Compared to the significant increase.

接著說明波長未達330nm之情形作為比較例。例如,第2圖中,波長為254nm時,n<k。於該n及k的條件下由非晶矽製的格點2所成之網格偏光元件中,同樣地模擬出穿透率和消光比如何變化。該結果如第4圖所示。第4圖係在具有第2圖所示的光學常數之非晶矽中,將使用波長設為254nm時,模擬出穿透率及消光比相對於偏向比t/T如何變化之結果之圖。同樣的,第4圖(1)表示穿透率,(2)表示消光比。格點2的寬度 W,同樣於10~30nm之間以5nm間隔改變,但高度為170nm維持為一定。 Next, a case where the wavelength is less than 330 nm will be described as a comparative example. For example, in Fig. 2, when the wavelength is 254 nm, n < k. In the grid polarizing element formed by the amorphous germanium grid 2 under the conditions of n and k, the transmittance and the extinction ratio were similarly simulated. The result is shown in Figure 4. Fig. 4 is a graph showing the results of how the transmittance and the extinction ratio change with respect to the deflection ratio t/T when the wavelength used is 254 nm in the amorphous crucible having the optical constant shown in Fig. 2. Similarly, Fig. 4 (1) shows the transmittance, and (2) shows the extinction ratio. Width of grid 2 W, also varies between 10 and 30 nm at intervals of 5 nm, but the height is maintained at 170 nm.

如第4圖(1)所示,於波長254nm的條件(n<k的條件)下,可確認到於10~20nm的格點寬度W中,穿透率若干地提升,但在其他格點寬度W中,穿透率若干地降低。此外,關於消光比,可確認到不論在何種格點寬度W中,當t/T<1時乃急遽地降低。消光比的降低,在確認到一部分穿透率的提升之偏向比t/T小之區域中較為顯著。亦即,在n<k的條件時,可確認到即使使格點2偏向存在,消光比不僅無任何提升,反而會急遽地降低。如此,於使用波長中,當格點2的光學常數具有n<k的關係時,可確認到於網格偏光元件中,即使使格點2偏向存在,消光比不僅無任何提升,反而會降低,相對於此,當具有n>k的關係時,可確認到能夠藉由偏向存在化而大幅提升消光比,此時穿透率亦不會大幅降低。 As shown in Fig. 4 (1), under the condition of a wavelength of 254 nm (the condition of n < k), it was confirmed that the transmittance of the lattice width W of 10 to 20 nm was increased somewhat, but at other lattice points. In the width W, the penetration rate is somewhat lowered. Further, regarding the extinction ratio, it was confirmed that the t/T<1 was sharply lowered regardless of the lattice width W. The decrease in the extinction ratio is remarkable in the region where the deflection of the partial transmittance is smaller than t/T. That is, in the case of n < k, it can be confirmed that even if the lattice point 2 is biased to exist, the extinction ratio is not reduced without any increase, but is drastically lowered. Thus, in the wavelength of use, when the optical constant of the lattice point 2 has a relationship of n < k, it can be confirmed that in the grid polarizing element, even if the lattice point 2 is biased to exist, the extinction ratio is not improved without any increase, but is reduced. On the other hand, when it has the relationship of n>k, it can be confirmed that the extinction ratio can be greatly increased by the presence of the bias, and the transmittance is not greatly lowered at this time.

此外,係說明由先前所使用之鋁製的格點所構成之網格偏光元件作為其他比較例。第5圖係顯示鋁的光學常數之圖,為根據Aleksandar D.Raki▲c▼.Algorithm for the determination of intrinsic optical constants of metal films:application to aluminium,Appl.Opt.34,4755-4767(1995)所示之數據所製作者。如第5圖所示,為鋁時,於同樣的短波長區域中,折射率實部n與消光係數k相比經常較小。 Further, a grid polarizing element composed of lattice dots made of aluminum previously used is described as another comparative example. Figure 5 is a graph showing the optical constant of aluminum according to Aleksandar D. Raki ▲ c ▼. Algorithm for the determination of intrinsic optical constants of metal films: application to aluminium, Appl. Opt. 34, 4755-4767 (1995) The producer of the data shown. As shown in Fig. 5, in the case of aluminum, the refractive index real portion n is often smaller than the extinction coefficient k in the same short wavelength region.

第6圖係當採用在具有第5圖所示的光學常數之鋁作 為格點2的材質時,模擬出改變偏向比t/T時穿透率及消光比如何變化之結果之圖。同樣的,第6圖(1)表示穿透率,(2)表示消光比。使用波長假定為254nm,於該波長所得者,為折射率實部n=0.183,消光係數k=2.93。格點2的寬度W,同樣於10~30nm之間以5nm間隔改變,但高度為170nm維持為一定。 Figure 6 is when using aluminum with the optical constant shown in Figure 5 In the case of the material of the grid point 2, a graph showing the result of changing the transmittance and the extinction ratio at the time of the deflection ratio t/T is simulated. Similarly, Fig. 6 (1) shows the transmittance, and (2) shows the extinction ratio. The wavelength used is assumed to be 254 nm, and the wavelength obtained is the real part of the refractive index n = 0.183, and the extinction coefficient k = 2.93. The width W of the lattice point 2 is also changed at intervals of 5 nm between 10 and 30 nm, but the height is maintained at 170 nm.

如第6圖(1)所示,在由鋁所成之格點2中,可確認到於10~20nm的格點寬度W中,穿透率若干地提升。穿透率於偏向比t/T較小時為較高,最大約為40%。然而,如第6圖(2)所示,關於消光比,可確認到不論在何種格點寬度W中,當t/T<1時乃急遽地降低。消光比的降低,在確認到一部分穿透率的提升之偏向比t/T小之區域中較為顯著。亦即,即使將格點2的材質構成為鋁,在使格點2偏向存在時,重要的消光比會降低,無法同時兼顧穿透率的提升及消光比的提升。 As shown in Fig. 6 (1), in the lattice point 2 formed of aluminum, it was confirmed that the transmittance was increased somewhat in the lattice width W of 10 to 20 nm. The penetration rate is higher when the deflection ratio t/T is smaller, and the maximum is about 40%. However, as shown in Fig. 6 (2), it is confirmed that the extinction ratio is sharply lowered when t/T < 1 regardless of the lattice width W. The decrease in the extinction ratio is remarkable in the region where the deflection of the partial transmittance is smaller than t/T. That is, even if the material of the lattice point 2 is made of aluminum, when the lattice point 2 is biased, the important extinction ratio is lowered, and the improvement of the transmittance and the improvement of the extinction ratio cannot be simultaneously achieved.

如此,格點2的偏向存在化所帶來之消光比提升效果,於格點2的材質中當n>k的條件成立時可得到。具有n>k的格點2之實施形態之網格偏光元件中,關於可得到消光比提升之理由,以下係說明可推測之事項。第7圖係示意顯示實施形態之網格偏光元件中,消光比提升的理由之立體概略圖。 In this way, the extinction ratio enhancement effect by the partial presence of the lattice point 2 is obtained when the condition of n>k is satisfied in the material of the lattice point 2. In the mesh polarizing element of the embodiment having the lattice point 2 of n>k, the reason why the extinction ratio can be improved is described below. Fig. 7 is a perspective schematic view showing the reason why the extinction ratio is improved in the grid polarizing element of the embodiment.

如前述般,消光比為p偏光光線的強度(Ip)相對於s偏光光線的強度(Is)之比,提高消光比者,只須使s偏光光線不會穿透偏光元件者即可,在此主要考量到s偏 光光線的動作。 As described above, the extinction ratio is the ratio of the intensity (Ip) of the p-polarized light to the intensity (Is) of the s-polarized light, and the extinction ratio is increased, and only the s-polarized light does not penetrate the polarizing element. This is mainly to consider the s bias The action of light rays.

第7圖中,簡便上,光線係設為從紙面上的上方往下方傳輸者,並以該方向為z方向。此外,以格點2的延伸方向為y方向,因此,s偏光光線(第5圖中以Ls表示)具有電場成分Ey。該s偏光光線的磁場成分(圖中未顯示)成為x方向(Hx)。 In Fig. 7, in the simplest case, the light is transmitted from the upper side to the lower side of the paper surface, and the direction is the z direction. Further, since the extending direction of the lattice point 2 is the y direction, the s-polarized light ray (indicated by Ls in Fig. 5) has an electric field component Ey. The magnetic field component (not shown) of the s polarized light is in the x direction (Hx).

當該s偏光光線照射在網格偏光元件的格點2時,s偏光光線的電場Ey藉由格點2的介電常數而弱化。另一方面,格點2間的介質較多為空氣,一般而言,其介電常數較格點2小,所以在格點2間的空間中,電場Ey並未如在格點2內般地弱。 When the s polarized light is incident on the lattice point 2 of the grid polarizing element, the electric field Ey of the s polarized light is weakened by the dielectric constant of the lattice point 2. On the other hand, the medium between grid points 2 is mostly air. Generally speaking, the dielectric constant is smaller than grid point 2, so in the space between grid points 2, the electric field Ey is not as in grid point 2. The ground is weak.

其結果為,在x-y平面內產生電場Ey的旋轉成分。然後,藉由對應於法拉第的電磁感應之下列麥斯威爾方程式(式2),因應該x-y平面上的旋轉強度,在z方向上誘發兩個互呈逆向的磁場Hz。 As a result, a rotational component of the electric field Ey is generated in the x-y plane. Then, by the following Maxwell's equation (Equation 2) corresponding to the Faraday electromagnetic induction, two mutually opposite magnetic fields Hz are induced in the z direction in response to the rotational intensity on the x-y plane.

亦即,以格點2間之中央的電場Ey的最高處為交界,於一方側,Hz朝向光的傳輸方向前方,於另一方側,Hz朝向後方。在此,於第7圖中雖然省略,但x方向的磁場Hx與Ey同相位,並朝向x軸之負的一側存在。該x方向磁場成分Hx,往所生成之z方向成分Hz貝 拉引而起伏地變形。 That is, the highest point of the electric field Ey at the center of the lattice point 2 is the boundary, and on one side, Hz is directed forward in the light transmission direction, and on the other side, Hz is directed rearward. Here, although omitted in FIG. 7, the magnetic field Hx in the x direction is in phase with Ey and exists on the negative side of the x-axis. The x-direction magnetic field component Hx, to the generated z-direction component Hz Pulled and deformed.

第8圖係顯示確認到x方向磁場成分Hx的起伏之模擬結果之圖。第8圖係同樣地將格點2的材質構成為非晶矽,並在波長365nm中2的光學常數(n=4.03,k=3.04)下進行模擬者(n>k)。第8圖中,格點2之各線狀部21的寬度W為15nm,各線狀部21的間隔為90nm且維持為一定,各線狀部21的高度設為170nm。模擬,係根據FDTD(Finite-Difference Time-Domain;時域有限差分)法,所使用之軟體為Mathworks公司(美國麻州)的MATLAB(同公司的註冊商標)。 Fig. 8 is a view showing a simulation result of confirming the fluctuation of the magnetic field component Hx in the x direction. In Fig. 8, the material of the lattice 2 is similarly formed into an amorphous crucible, and the simulator (n > k) is performed at an optical constant of 2 at a wavelength of 365 nm (n = 4.03, k = 3.04). In Fig. 8, the width W of each linear portion 21 of the lattice point 2 is 15 nm, the interval between the linear portions 21 is 90 nm and is maintained constant, and the height of each linear portion 21 is 170 nm. The simulation is based on the FDTD (Finite-Difference Time-Domain) method, and the software used is MATLAB (registered trademark of the same company) of Mathworks Corporation (Massachusetts, USA).

第8圖中,上側較濃黑色的部分為電場Ez的負成分,中等程度淡灰色的部分為電場Ez的正成分。磁場以向量(箭頭)來顯示。 In Fig. 8, the upper portion of the thicker black portion is the negative component of the electric field Ez, and the portion of the medium grayish portion is the positive component of the electric field Ez. The magnetic field is displayed as a vector (arrow).

如第8圖所示,照射在格點2之前的s偏光光線中,由於無Hz成分,所以僅成為Hx成分,但由於照射在格點2之前述Hz成分的生成,可確認到磁場於x-z面內產生起伏。如第8圖所示,磁場的起伏可說是順時針方向之磁場的旋轉之狀況。第8圖中,y方向為光的傳輸方向,z方向為格點2的長度方向,與第7圖不同。 As shown in Fig. 8, the s-polarized ray that is irradiated before the grid point 2 has only the Hx component because it has no Hz component. However, since the Hz component is generated by the grating 2, the magnetic field is confirmed to be xz. There are undulations in the plane. As shown in Fig. 8, the fluctuation of the magnetic field can be said to be a state of rotation of the magnetic field in the clockwise direction. In Fig. 8, the y direction is the light transmission direction, and the z direction is the length direction of the lattice point 2, which is different from Fig. 7.

當產生該磁場成分Hx的起伏(旋轉)時,藉由對應於安培-麥斯威爾法則(Ampere-Maxwell Law)之麥斯威爾方程式(式3),進一步於第7圖的y方向產生電場。 When the fluctuation (rotation) of the magnetic field component Hx is generated, it is further generated in the y direction of the seventh figure by the Maxwell's equation (formula 3) corresponding to the Ampere-Maxwell Law. electric field.

第9圖係示意顯示該模樣。第9圖係示意顯示藉由x方向磁場成分Hx的起伏(旋轉)而新產生電場Ey之模樣之正視剖面概略圖。 Figure 9 is a schematic representation of this pattern. Fig. 9 is a schematic front cross-sectional view showing a pattern in which an electric field Ey is newly generated by the undulation (rotation) of the x-direction magnetic field component Hx.

如第9圖所示,藉由x-z面內之磁場成分Hx的起伏(旋轉),於格點2內產生朝向第9圖的紙面面前側之電場Ey,於格點2與格點2之間產生朝向紙面內側之電場Ey。此時,由於入射之s偏光光線之原先的電場Ey朝向紙面面前側,所以格點2間的電場藉由上述磁場的旋轉被抵銷,而作用為使波動被阻斷。結果使電場Ey局部存在於格點2內,並藉由因應格點2的材質之吸收,使s偏光光線的能量一邊於格點2內傳遞一邊消失。 As shown in FIG. 9, the electric field Ey toward the front side of the paper of FIG. 9 is generated in the grid 2 by the undulation (rotation) of the magnetic field component Hx in the xz plane, between grid point 2 and grid point 2. An electric field Ey is generated toward the inner side of the paper. At this time, since the original electric field Ey of the incident s-polarized ray is directed toward the front side of the paper surface, the electric field between the lattice points 2 is offset by the rotation of the magnetic field, and acts to cause the fluctuation to be blocked. As a result, the electric field Ey is locally present in the grid point 2, and the energy of the s-polarized light disappears while passing through the grid point 2 by the absorption of the material of the lattice point 2.

另一方面,關於p偏光光線,雖然電場成分朝向x方向(Ex),但從y方向觀看時,介電常數的分布為一致,所以前述般之電場的旋轉成分實質上未產生。因此,s偏光光線般之電場於格點2內的局部存在化、於格點2內的衰減,於p偏光光線中未產生。亦即,對於s偏光光線,由於產生磁場成分Hx的起伏(旋轉)使電場Ey局部存在於格點2內,並藉由格點2的吸收使s偏光光線選擇性地衰減者,為此實施形態之網格偏光元件的動作原理。此s偏光光線之電場Ey的局部存在化,可推測為能夠藉由使格點2偏向存在化,並將格點2間的間隔部分地 窄化而有效率地達成,藉此可提高消光比。第3圖所示之消光比的提升,可考量為依據此機制者。 On the other hand, in the p-polarized ray, the electric field component is oriented in the x direction (Ex), but the distribution of the dielectric constant is uniform when viewed from the y direction. Therefore, the above-described general electric field rotation component is not substantially generated. Therefore, the electric field of the s-polarized light is locally present in the lattice point 2, and the attenuation in the lattice point 2 is not generated in the p-polarized light. That is, for the s-polarized light, the undulation (rotation) of the magnetic field component Hx causes the electric field Ey to locally exist in the lattice point 2, and the s-polarized light is selectively attenuated by the absorption of the lattice point 2, thereby implementing The operating principle of the form of the grid polarizing element. The localization of the electric field Ey of the s-polarized ray is presumed to be possible by biasing the lattice point 2 to exist, and partially spacing the lattice points 2 It is narrowed and efficiently achieved, whereby the extinction ratio can be increased. The improvement of the extinction ratio shown in Fig. 3 can be considered as the basis of this mechanism.

此外,上述電場Ey的局部存在化當折射率實部n小於消光係數k時,實質上不會產生。折射率實部n與消光係數k,當使用物理常數εμ來表示時,成為下列式4。 Further, the localization of the electric field Ey described above does not substantially occur when the real part n of the refractive index is smaller than the extinction coefficient k. When the real part n of the refractive index and the extinction coefficient k are expressed by using the physical constant ε or μ , the following formula 4 is obtained.

從式4中,可得知n<k者,係具有負的介電常數。此係意味著波動無法進入於內部,上述情形時,意味著電場未形成於格點2內。因此,上述電場的局部存在化實質上不會產生。另一方面,當藉由使格點2偏向存在化以產生格點間隔較寬廣之場所時,s偏光光線容易以通過該場所之方式傳遞,結果使消光比大幅降低。第4圖或第6圖所示之消光比的急遽降低,可推測為顯示此狀況者。 From Equation 4, it can be seen that n < k has a negative dielectric constant. This means that the fluctuation cannot enter the inside. In the above case, it means that the electric field is not formed in the grid point 2. Therefore, the localization of the electric field described above does not substantially occur. On the other hand, when the lattice point 2 is biased to exist in a place where the lattice spacing is wide, the s-polarized light is easily transmitted through the place, and as a result, the extinction ratio is greatly reduced. The sudden decrease in the extinction ratio shown in Fig. 4 or Fig. 6 can be presumed to indicate the situation.

第10圖係探討使用非晶矽製的格點2之網格偏光元件的最適構造之結果之圖。如第3圖(2)所示,當將偏向比t/T降低較1更小時(偏向存在化),消光比立即提升。消光比於某t/T中成為峰值,然後下降。此外,並以某t/T為交界,消光比小於相對值1。亦即,與未偏向存在化時相比,消光比降低。因此,只需構成為消光比低於相對值1時之t/T值(以下成為臨界偏在比)以上的偏在比即可。 Fig. 10 is a view showing the results of an optimum structure of a grid polarizing element using lattice 2 of amorphous germanium. As shown in Fig. 3 (2), when the deflection ratio t/T is lowered by 1 (the bias is present), the extinction ratio is immediately increased. The extinction ratio becomes a peak in a t/T and then falls. In addition, with a certain t/T as the boundary, the extinction ratio is less than the relative value of 1. That is, the extinction ratio is lower than when the unbiased existence is present. Therefore, it is only necessary to configure the partial ratio of the t/T value (hereinafter referred to as the critical deviation ratio) when the extinction ratio is lower than the relative value 1 .

第10圖為點繪出該為臨界偏在比之圖。第10圖所示之直線,為對各標記適用最小平方法所拉出之直線。如在此所示般,若預先構成為t/T>0.0159w+0.3735,則可預見到消光比的提升。然後,如參考第3圖(1)所明瞭般,於該範圍內,穿透率幾乎未降低。亦即,可得到兼顧消光比與穿透率之網格偏光元件。 Figure 10 is a plot of the plot as a critical bias ratio. The straight line shown in Fig. 10 is a straight line drawn by applying the least square method to each mark. As shown here, if t/T>0.0159w+0.3735 is formed in advance, an increase in the extinction ratio can be expected. Then, as described with reference to Fig. 3 (1), the penetration rate is hardly lowered within this range. That is, a grid polarizing element that combines the extinction ratio and the transmittance can be obtained.

接著說明實施形態之網格偏光元件的製造方法。以下的說明,亦為網格偏光元件製造方法之發明的實施形態之說明。 Next, a method of manufacturing the grid polarizing element of the embodiment will be described. The following description is also an explanation of an embodiment of the invention of the method of manufacturing a grid polarizing element.

第11圖係顯示實施形態之網格偏光元件的製造方法之概略圖。實施形態之製造方法中,首先如第11圖(1)所示,於透明基板1上製作中間薄膜3。中間薄膜3為製作格點用的薄膜時成為基礎之薄膜。中間薄膜3,由於最終會被去除,所以該材料並無特別限制。只要形狀穩定性佳且於蝕刻時可迅速去除之材料即可。例如可選擇光阻等之有機材料、碳等作為中間薄膜3的材質。 Fig. 11 is a schematic view showing a method of manufacturing the grid polarizing element of the embodiment. In the manufacturing method of the embodiment, first, as shown in Fig. 11 (1), the intermediate film 3 is formed on the transparent substrate 1. The intermediate film 3 is a film which is a base film when forming a film for a lattice. The intermediate film 3 is not particularly limited since it is eventually removed. As long as the shape is stable and the material can be quickly removed during etching. For example, an organic material such as a photoresist or carbon can be selected as the material of the intermediate film 3.

接著如第11圖(2)所示,進行微影成像以使中間薄膜3形成圖型。亦即進行光阻的全面塗布,然後進行曝光、顯影、蝕刻,以使中間薄膜3形成圖型。圖型,係將中間薄膜3形成為由在紙面垂直方向上延伸之多數條線狀部(以下稱為中間線狀部)31所構成之條紋狀。此時,各中間線狀部31的寬度L1或該開離間隔L2,決定了最終製作出之格點2之各線狀部21的間隔t、T。 Next, as shown in Fig. 11 (2), lithography imaging is performed to form the intermediate film 3 into a pattern. That is, the entire coating of the photoresist is performed, and then exposure, development, and etching are performed to form the intermediate film 3 into a pattern. In the drawing, the intermediate film 3 is formed in a stripe shape composed of a plurality of linear portions (hereinafter referred to as intermediate linear portions) 31 extending in the vertical direction of the paper. At this time, the width L1 of each of the intermediate linear portions 31 or the opening distance L2 determines the intervals t and T of the linear portions 21 of the finally formed lattice points 2.

接著如第11圖(3)所示,於由各中間線狀部31所構成之溝槽的側面,製作格點用薄膜4。格點用薄膜4僅需製作於溝槽的側面即足夠,但通常以覆蓋全面之方式於全體上製作格點用薄膜4。格點用薄膜4是由格點2的材料,亦即矽所構成之薄膜,例如可藉由濺鍍來製作。於格點用薄膜4的製作後,進行格點用薄膜4的異向性蝕刻。異向性蝕刻,為透明基板1的厚度方向上之蝕刻。藉由該蝕刻,如第11圖(4)所示,乃成為格點用薄膜4殘留於中間線狀部31的兩側壁之狀態。 Next, as shown in Fig. 11 (3), the lattice film 4 is formed on the side surface of the groove formed by each of the intermediate linear portions 31. The film for the dot pattern 4 is only required to be formed on the side surface of the groove, but the film 4 for the dot pattern is usually formed on the entire surface in a comprehensive manner. The film for the dot pattern 4 is a film made of a material of the lattice 2, that is, a crucible, and can be produced, for example, by sputtering. After the production of the film 4 for the lattice, the anisotropic etching of the film 4 for the lattice is performed. The anisotropic etching is etching in the thickness direction of the transparent substrate 1. By this etching, as shown in Fig. 11 (4), the lattice film 4 remains in the both side walls of the intermediate linear portion 31.

然後,使用僅可蝕刻中間薄膜3的材料之蝕刻劑來進行蝕刻,以將各中間線狀部31全部去除。藉此,乃成為由矽製的各線狀部21所形成之格點2形成於透明基板1上之狀態,而得到實施形態之網格偏光元件。所得之網格偏光元件,具有既定的偏向比t/T,且以成為該值之方式因應格點寬度W來決定各中間線狀部31的尺寸L1、L2。 Then, etching is performed using an etchant that can only etch the material of the intermediate film 3 to remove all of the intermediate linear portions 31. Thereby, the lattice point 2 formed by each of the linear portions 21 made of tantalum is formed on the transparent substrate 1, and the mesh polarizing element of the embodiment is obtained. The obtained grid polarizing element has a predetermined deflection ratio t/T, and the size L1, L2 of each intermediate linear portion 31 is determined in accordance with the grid width W so as to be the value.

關於具有既定的偏向比t/T之網格偏光元件的製造方法,除了第11圖所示之方法之外,亦有其他方法。關於此點,使用第12圖來說明。第12圖係顯示實施形態之網格偏光元件的其他製造方法之概略圖。 Regarding the manufacturing method of the grid polarizing element having a predetermined deflection ratio t/T, in addition to the method shown in Fig. 11, there are other methods. In this regard, use Figure 12 to illustrate. Fig. 12 is a schematic view showing another manufacturing method of the grid polarizing element of the embodiment.

第12圖所示之製造方法中,亦於透明基板1上製作中間薄膜3,然後進行微影成像以使中間薄膜3形成圖型。此時,中間薄膜3的圖型形成方式與第11圖所示之方法不同。 In the manufacturing method shown in Fig. 12, the intermediate film 3 is also formed on the transparent substrate 1, and then lithographic imaging is performed to form the intermediate film 3 into a pattern. At this time, the pattern forming method of the intermediate film 3 is different from the method shown in Fig. 11.

第11圖中,於最終製品中,於形成有較窄者之寬度t的間隙之位置上,以相當於該寬度t之寬度L1形成各中間線狀部31。然後將各中間線狀部31的開離間隔,形成為將兩個線狀部21的寬度(格點寬度W)加上較寬者之間隙的寬度T而成間隔L2。另一方面,第12圖所示之方法中,於形成有較寬者之寬度T的間隙之位置上,以相當於該寬度T之寬度L2形成各中間線狀部31。然後將各中間線狀部31的開離間隔,形成為將兩個線狀部21的寬度加上較窄者之間隙的寬度t而成間隔L1。 In Fig. 11, in the final product, each intermediate linear portion 31 is formed at a position corresponding to the width L of the width t at a position where a gap having a narrow width t is formed. Then, the opening and spacing of the intermediate linear portions 31 is formed such that the width (grid width W) of the two linear portions 21 is increased by the width T of the gap of the wider portion to form an interval L2. On the other hand, in the method shown in Fig. 12, each intermediate linear portion 31 is formed at a position corresponding to the width L of the width T at a position where a gap having a width T of a wider width is formed. Then, the opening and spacing of the intermediate linear portions 31 is formed so as to increase the width of the two linear portions 21 by the width t of the narrow gap to form an interval L1.

除了上述點之外,其他實質上相同,進行格點用薄膜4的製作(第12圖(3))、格點用薄膜4的異向性蝕刻(第12圖(4))、各中間線狀部31的去除(第12圖(5)),而將格點2形成於透明基板1上。藉由此方法,亦可製造上述實施形態之網格偏光元件。 In addition to the above, substantially the same, the production of the lattice film 4 (Fig. 12 (3)), the anisotropic etching of the lattice film 4 (Fig. 12 (4)), and the intermediate lines are performed. The portion 31 is removed (Fig. 12 (5)), and the lattice 2 is formed on the transparent substrate 1. By this method, the mesh polarizing element of the above embodiment can also be manufactured.

第11圖的製造方法與第12圖的製造方法,技術上為等效,但就製造的容易性、或是格點2的尺寸精度、製品的基本性能等方面來看,第11圖所示之方法較為有利。如可從第11圖(3)與第12圖(3)之比較中所明瞭般,於製作格點用薄膜4時,由各中間線狀部31所形成之溝槽的寬高比,第12圖的製造方法者較第11圖的製造方法者更高。寬高比高之溝槽的內面之膜製作,一般而言較困難,於溝槽較深的部分,膜厚容易變薄。 The manufacturing method of Fig. 11 and the manufacturing method of Fig. 12 are technically equivalent, but in terms of easiness of manufacture, dimensional accuracy of the lattice point 2, basic performance of the product, etc., Fig. 11 is shown. The method is more advantageous. As can be seen from the comparison between FIG. 11 (3) and FIG. 12 (3), when the film 4 for the lattice is produced, the aspect ratio of the groove formed by each of the intermediate linear portions 31 is The manufacturing method of Fig. 12 is higher than that of the manufacturing method of Fig. 11. It is generally difficult to fabricate the inner surface of the groove having a high aspect ratio, and the film thickness is likely to be thinner in a portion where the groove is deep.

此外,於格點用薄膜4的異向性蝕刻中,第12圖(4)者,與第11圖(4)者相比,必須對寬高比高 之溝槽的底面進行異向性蝕刻。一般而言,係難以選擇性地使蝕刻劑到達寬高比高之溝槽的底面,而在底面容易殘留格點用薄膜4。當格點用薄膜4殘留於底面時,如前述說明中所明瞭般,會導致網格偏光元件的消光比和穿透率之基本性能的降低。 In addition, in the anisotropic etching of the film 4 for the lattice, the image of Fig. 12 (4) must be higher than the height ratio of the image of Fig. 11 (4). The bottom surface of the trench is anisotropically etched. In general, it is difficult to selectively cause the etchant to reach the bottom surface of the trench having a high aspect ratio, and the film 4 for the lattice is likely to remain on the bottom surface. When the lattice film 4 remains on the bottom surface, as will be explained in the foregoing description, the basic performance of the extinction ratio and the transmittance of the grid polarizing element is lowered.

第11圖的製造方法與第12圖的製造方法中,完成後之網格偏光元件中,格點2的形狀若干地不同。關於此點,使用第13圖來說明。第13圖係顯示藉由第11圖的製造方法所製造之網格偏光元件與藉由第12圖的製造方法所製造之網格偏光元件之形狀的相異之概略圖。 In the manufacturing method of FIG. 11 and the manufacturing method of FIG. 12, in the completed mesh polarizing element, the shape of the lattice point 2 is somewhat different. In this regard, use Figure 13 to illustrate. Fig. 13 is a schematic view showing the difference between the shape of the grid polarizing element manufactured by the manufacturing method of Fig. 11 and the shape of the grid polarizing element manufactured by the manufacturing method of Fig. 12.

第13圖中,係更詳細顯示於製造實施形態之網格偏光元件時之格點用薄膜4的異向性蝕刻。當中,第13圖(1-1)為第11圖所示之製造方法者,(2-1)為第12圖所示之製造方法者。 In Fig. 13, the anisotropic etching of the lattice film 4 in the case of manufacturing the grid polarizing element of the embodiment is shown in more detail. Among them, Fig. 13 (1-1) is the manufacturing method shown in Fig. 11, and (2-1) is the manufacturing method shown in Fig. 12.

格點用薄膜4的異向性蝕刻中,為了消除溝槽底部上之格點用薄膜4的殘留,較多情況會進行些微過剩的蝕刻(過度蝕刻)。異向性蝕刻,係藉由以電場來吸引電漿中的離子而進行,但溝槽開口的邊緣部分容易被充電,雖可藉由電場來賦予異向性,但邊緣部分亦受到較強的離子碰撞。因此,如第13圖所示,格點用薄膜4,在溝槽開口的邊緣部分上容易成為被斜向切削之剖面形狀。 In the anisotropic etching of the lattice film 4, in order to eliminate the residual film 4 on the bottom of the trench, a slight excess etching (overetching) is often performed. Anisotropic etching is performed by attracting ions in the plasma by an electric field, but the edge portion of the trench opening is easily charged, and although the electric field is used to impart anisotropy, the edge portion is also strongly received. Ion collision. Therefore, as shown in Fig. 13, the lattice film 4 is likely to have a cross-sectional shape that is obliquely cut at the edge portion of the groove opening.

從該內容中,可得知完成後之網格偏光元件的格點2,其各線狀部21的上表面成為錐面。此時如第13圖(2-1)所示,於第11圖的製造方法中,各線狀部 21的上表面為朝向較寬間隔T側的間隙逐漸降低之錐面,相對於此,於第12圖所示之製造方法中,如第13圖(2-2)所示,各線狀部21的上表面為朝向較窄間隔t側的間隙逐漸降低之錐面。從各線狀部21之剖面形狀的不同來看,可辨識出依據第11圖的製造方法者或是依據第12圖的製造方法者。 From this content, the lattice point 2 of the completed mesh polarizing element can be known, and the upper surface of each linear portion 21 becomes a tapered surface. At this time, as shown in Fig. 13 (2-1), in the manufacturing method of Fig. 11, each linear portion The upper surface of 21 is a tapered surface that gradually decreases toward the gap on the side of the wide interval T. On the other hand, in the manufacturing method shown in Fig. 12, as shown in Fig. 13 (2-2), each linear portion 21 is formed. The upper surface is a tapered surface that gradually decreases toward the gap on the narrower interval t side. From the difference in the cross-sectional shape of each of the linear portions 21, the manufacturing method according to Fig. 11 or the manufacturing method according to Fig. 12 can be recognized.

接著說明網格偏光元件的使用例。第14圖係顯示實施形態之網格偏光元件的使用例,為裝載網格偏光元件之光配向裝置之剖面概略圖。 Next, an example of use of the grid polarizing element will be described. Fig. 14 is a schematic cross-sectional view showing an example of use of the mesh polarizing element of the embodiment, which is an optical alignment device for loading a grid polarizing element.

第14圖所示之裝置,為用以得到前述液晶顯示器用的光配向膜之光配向裝置,藉由將偏光光線照射在對象物(工件)10,可構成使工件10的分子結構整合於一定的方向之狀態。因此,工件10為光配向膜用的膜(膜材),例如為聚醯亞胺製的薄片。當工件10為薄片狀時,係採用連續輥(Roll-to-Roll)的運送方式,並且於運送中途照射偏光光線。以光配向膜用的膜材所被覆之液晶基板,有時亦成為工件,此時可採用將液晶基板載置於承載台來運送,或是以輸送帶來運送之構成。 The apparatus shown in Fig. 14 is a light alignment device for obtaining the light alignment film for the liquid crystal display, and by irradiating the polarized light onto the object (workpiece) 10, the molecular structure of the workpiece 10 can be integrated. The state of the direction. Therefore, the workpiece 10 is a film (film material) for a photo-alignment film, and is, for example, a sheet made of polyimide. When the workpiece 10 is in the form of a sheet, a continuous roll (Roll-to-Roll) conveyance method is employed, and the polarized light is irradiated during transportation. The liquid crystal substrate covered with the film for a light alignment film may be a workpiece. In this case, the liquid crystal substrate may be placed on a carrier or transported, or may be transported by a transport belt.

第14圖所示之裝置,具備:光源5、覆蓋光源5的背後之反射鏡6、以及配置在光源5與反射鏡6之間之網格偏光元件7。網格偏光元件7,為前述實施形態者。 The apparatus shown in Fig. 14 includes a light source 5, a mirror 6 covering the back of the light source 5, and a grid polarizing element 7 disposed between the light source 5 and the mirror 6. The mesh polarizing element 7 is the above embodiment.

較多情況下,光配向必須進行紫外線的照射,所以光源5係使用如高壓汞燈般之紫外線燈。光源5,係使用在 垂直於工件10的運送方向之方向(在此為止面垂直方向)上為較長者。 In many cases, the light distribution must be irradiated with ultraviolet rays, so the light source 5 is an ultraviolet lamp such as a high pressure mercury lamp. Light source 5, used in The direction perpendicular to the direction of transport of the workpiece 10 (here, the vertical direction of the surface) is longer.

網格偏光元件7,如前述般,以格點2的長度為基準使p偏光光線選擇性地穿透。因此,以使p偏光光線的偏光軸朝向進行光配向之方向之方式,以良好的姿勢精度將網格偏光元件7配置在工件10。 The mesh polarizing element 7 selectively penetrates the p-polarized light with reference to the length of the lattice point 2 as described above. Therefore, the grid polarizing element 7 is placed on the workpiece 10 with good posture accuracy so that the polarization axis of the p-polarized ray is directed in the direction in which the light is aligned.

網格偏光元件,由於難以製造較大型者,在需將偏光光線照射在較大區域時,可採用在同一平面上排列複數個網格偏光元件之構成。此時,排列複數個網格偏光元件之面,係設成與工件10之表面平行,以使各網格偏光元件之格點的長度方向相對於工件呈既定方向之方式配置各網格偏光元件。 In the case of a grid polarizing element, since it is difficult to manufacture a large type, when a polarized light is required to be irradiated on a large area, a plurality of mesh polarizing elements may be arranged on the same plane. At this time, the faces of the plurality of mesh polarizing elements are arranged so as to be parallel to the surface of the workpiece 10, so that the longitudinal direction of the lattice points of the respective mesh polarizing elements are arranged in a predetermined direction with respect to the workpiece in a predetermined direction. .

上述實施形態之網格偏光元件,由於格點2由非晶質狀的矽所形成,且在使用波長中折射率實部n大於消光係數k,所以可在不會使穿透率降低下提升消光比。因此可照射品質更佳之偏光光線。格點寬度w,由於製造上的變動等之其他理由,因各線狀部21的不同而不同時,於適用上述式時,可適用各線狀部21之寬度的平均值。 In the grid polarizing element of the above embodiment, since the lattice point 2 is formed of amorphous germanium, and the refractive index real portion n is larger than the extinction coefficient k at the use wavelength, it can be improved without lowering the transmittance. Extinction Ratio. Therefore, it is possible to illuminate a better quality polarized light. The lattice width w is different for each of the linear portions 21 due to other reasons such as variations in manufacturing, and the average value of the widths of the respective linear portions 21 can be applied when the above formula is applied.

此外,裝載該網格偏光元件之光配向裝置,由於使用消光比高之網格偏光元件,所以可進行高品質的光配向處理,而得到高品質的光配向膜。因此可大幅貢獻在高畫質顯示器的製造。 Further, since the optical alignment device in which the grid polarizing element is mounted uses a high-quality optical alignment treatment using a high-quality optical alignment film, a high-quality optical alignment film can be obtained. Therefore, it can contribute greatly to the manufacture of high-definition displays.

實施形態之網格偏光元件的構造中,係說明t ≠T的部分週期性地存在者,但距離t的部分與距離T的部分交互地存在之構造(第1圖所示之構造)亦為其一例。週期性的格點偏向存在構造,除此之外亦可考量到許多種。惟線狀部21以較寬開離間隔T排列之部分呈連續者,較不佳。此係由於s偏光光線於該部分容易穿透,而使消光比降低之故。當以t(狹窄)、T(寬廣)來表示格點間隔的圖型時,較佳的其他例,可列舉出ttTttTttT…,或ttTtTttTtT等。包含此例,本申請案發明並不排除包含t=T的部分。亦即,於全部場所中,t≠T並非必要要件。惟從消光比提升的效果之觀點來看,在格點的全部區域中之一半以上的區域中,較佳為t≠T。 In the structure of the grid polarizing element of the embodiment, the description is The portion of the ≠T periodically exists, but the structure in which the portion of the distance t and the portion of the distance T alternately exist (the structure shown in Fig. 1) is also an example. Periodic grid points are biased to exist, and many other types can be considered. However, the portion in which the linear portions 21 are arranged at a wide opening interval T is continuous, which is less preferable. This is because the s-polarized light is easily penetrated in this portion, and the extinction ratio is lowered. When the pattern of the lattice spacing is represented by t (narrow) and T (wide), preferred examples include ttTttTttT..., ttTtTttTtT, and the like. Including this example, the invention of the present application does not exclude the portion including t=T. That is, in all places, t≠T is not a necessary element. However, from the viewpoint of the effect of the extinction ratio enhancement, it is preferable that t ≠ T in one or more of the entire regions of the lattice points.

此外,上述實施形態中,使用波長為330nm以上的紫外線(例如365nm),但即使使用波長為400nm以上(可見光)時,亦可使用本申請案發明之網格偏光元件。例如在接近於約400~450nm的紫外區域之可見區域中,亦可較佳地使用。 Further, in the above embodiment, ultraviolet rays having a wavelength of 330 nm or more (for example, 365 nm) are used. However, even when a wavelength of 400 nm or more (visible light) is used, the mesh polarizing element of the invention of the present application can be used. For example, in a visible region close to an ultraviolet region of about 400 to 450 nm, it is preferably used.

1‧‧‧透明基板 1‧‧‧Transparent substrate

2‧‧‧格點 2‧‧ ‧ points

21‧‧‧線狀部 21‧‧‧Linear

t‧‧‧與一方側之相鄰的線狀部之距離 T‧‧‧distance from the adjacent line on one side

T‧‧‧與另一方側之相鄰的線狀部之距離 Distance between T‧‧‧ and the adjacent line on the other side

w‧‧‧各線狀部之寬度的平均值 W‧‧‧ Average of the width of each line

Claims (5)

一種網格偏光元件,其係由透明基板與設置在透明基板上之條紋狀的格點所構成,並且使波長330nm以上的光形成偏光之網格偏光元件,其特徵為:構成格點之各線狀部,係由波長330nm以上且折射率實部n大於消光係數k的非晶質狀的矽膜所形成,於構成格點之各線狀部中,將與一方側之相鄰的線狀部之距離設為t,與另一方側之相鄰的線狀部之距離設為T時,格點週期性地具有實質上t<T之部分;將前述各線狀部之寬度的平均值設為w時,於前述t<T之部分上,為t/T>0.0159w+0.3735的關係(t、T、w的單位為奈米)。 A grid polarizing element comprising a transparent substrate and stripe-shaped lattice dots disposed on the transparent substrate, and a light-polarized grid polarizing element that forms light having a wavelength of 330 nm or more, and is characterized by: lines constituting the lattice points The shape is formed by an amorphous ruthenium film having a wavelength of 330 nm or more and a real part n of the refractive index larger than the extinction coefficient k, and a linear portion adjacent to one side of each of the linear portions constituting the lattice point When the distance is t and the distance from the adjacent linear portion is T, the lattice points periodically have a portion of substantially t < T; and the average of the widths of the respective linear portions is set to w, in the above part of t < T, is a relationship of t / T > 0.0159w + 0.3735 (the unit of t, T, w is nano). 如請求項1所述之網格偏光元件,其中前述格點,當在沿著前述透明基板的表面之方向且為垂直於前述線狀部的長度方向之方向上觀看時,兩個前述線狀部隔著較寬距離T排列之部分並不具有呈連續之處。 The mesh polarizing element according to claim 1, wherein the lattice points are two linear lines when viewed in a direction along a surface of the transparent substrate and perpendicular to a length direction of the linear portion. Portions that are arranged across a wide distance T do not have continuity. 一種光配向裝置,其特徵為具備:光源、與請求項1或2項所述之網格偏光元件,網格偏光元件被配置在配置有光配向用的膜材之照射區域與光源之間。 An optical alignment device comprising: a light source, and a mesh polarizing element according to claim 1 or 2, wherein the mesh polarizing element is disposed between an irradiation region where the film for optical alignment is disposed and a light source. 一種偏光方法,其係使用由透明基板與設置在透明基板上之條紋狀的格點所構成之網格偏光元件,以使波長330nm以上的光形成偏光之偏光方法,其特徵為:構成格點之各線狀部,係由波長330nm以上且折射 率實部n大於消光係數k的非晶質狀的矽膜所形成,於構成格點之各線狀部中,將與一方側之相鄰的線狀部之距離設為t,與另一方側之相鄰的線狀部之距離設為T時,格點週期性地具有實質上t<T之部分;將前述各線狀部之寬度的平均值設為w時,於前述t<T之部分上,為t/T>0.0159w+0.3735的關係(t、T、w的單位為奈米)。 A polarizing method is a method of polarizing a light having a wavelength of 330 nm or more by using a grid polarizing element composed of a transparent substrate and stripe-shaped lattice dots provided on a transparent substrate, and is characterized by: forming lattice points Each of the linear portions is refracted by a wavelength of 330 nm or more. The amorphous portion n is formed by an amorphous ruthenium film having an extinction coefficient k, and the distance between the linear portions adjacent to one side of each of the linear portions constituting the lattice point is t, and the other side When the distance between the adjacent linear portions is T, the lattice points periodically have a portion substantially t<T; and when the average value of the widths of the linear portions is w, the portion of the above t<T Above, the relationship is t/T>0.0159w+0.3735 (the unit of t, T, and w is nanometer). 一種網格偏光元件製造方法,其係用以製造請求項1或2項所述之網格偏光元件,其特徵為具有:於透明基板上製作中間薄膜之中間薄膜製作步驟、使中間薄膜形成圖型而形成由多數個中間線狀部所構成之條紋狀之微影成像步驟、於在微影成像步驟中形成為條紋狀之中間薄膜之各溝槽的側面上製作格點用薄膜之格點用薄膜製作步驟、以及去除中間薄膜而藉由格點用薄膜來形成前述各線狀部之中間薄膜去除步驟;微影成像步驟,係於形成有前述距離t的間隙之位置上,以相當於該距離t之寬度L1形成各中間線狀部,並且將各中間線狀部的開離間隔形成為將前述線狀部的寬度加上前述距離T而成距離L2之步驟。 A method for manufacturing a grid polarizing element, which is used for manufacturing the grid polarizing element according to claim 1 or 2, characterized in that: an intermediate film forming step of forming an intermediate film on a transparent substrate, and forming an intermediate film Forming a stripe-shaped lithography imaging step formed by a plurality of intermediate linear portions, and forming lattice points of the lattice film on the side surfaces of the respective grooves formed as stripe-shaped intermediate films in the lithography imaging step a film forming step and an intermediate film removing step of forming each of the linear portions by a lattice film by removing the intermediate film; the lithography imaging step is at a position where the gap of the distance t is formed, corresponding to the film forming step Each of the intermediate linear portions is formed by the width L1 of the distance t, and the distance between the respective intermediate linear portions is formed by adding the width T of the linear portion to the distance L2.
TW103119352A 2013-07-09 2014-06-04 Grid polarizing element, optical alignment device, polarizing method and manufacturing method of grid polarizing element TWI594026B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013143119A JP5867460B2 (en) 2013-07-09 2013-07-09 Grid polarizing element, optical alignment apparatus, polarization method, and grid polarizing element manufacturing method

Publications (2)

Publication Number Publication Date
TW201510582A TW201510582A (en) 2015-03-16
TWI594026B true TWI594026B (en) 2017-08-01

Family

ID=52255864

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103119352A TWI594026B (en) 2013-07-09 2014-06-04 Grid polarizing element, optical alignment device, polarizing method and manufacturing method of grid polarizing element

Country Status (4)

Country Link
JP (1) JP5867460B2 (en)
KR (1) KR101799141B1 (en)
CN (1) CN104280808B (en)
TW (1) TWI594026B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6884501B2 (en) * 2015-08-25 2021-06-09 大日本印刷株式会社 Polarizer
CN105652507B (en) * 2016-02-29 2019-11-29 广东小天才科技有限公司 The production method of plated film polarisation display screen, mobile terminal and plated film polarisation display screen
JP6988079B2 (en) * 2016-12-14 2022-01-05 ウシオ電機株式会社 Method for manufacturing grid polarizing element and grid polarizing element for ultraviolet rays
TWI702424B (en) 2017-10-24 2020-08-21 日商旭化成股份有限公司 Image display device, wire grid polarizer and its manufacturing method, observation method of wire grid polarizer, and method of estimating the direction of polarization axis of wire grid polarizer
CN110632783B (en) * 2018-06-22 2021-05-18 深圳Tcl新技术有限公司 Quantum dot liquid crystal panel and manufacturing method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005202104A (en) * 2004-01-15 2005-07-28 Nikon Corp Method for manufacturing polarization element, polarization element, method for manufacturing picture projecting device and picture projecting device
TW200613779A (en) * 2004-10-28 2006-05-01 Ushio Electric Inc Polarizer unit and polarized light irradiation device
US20090041971A1 (en) * 2006-08-15 2009-02-12 Api Nanofabrication And Research Corp. Polarizer films and methods of making the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090231702A1 (en) * 2008-03-17 2009-09-17 Qihong Wu Optical films and methods of making the same
JP4968165B2 (en) * 2008-04-24 2012-07-04 ウシオ電機株式会社 Polarized light irradiation device for photo-alignment
JP2010186906A (en) * 2009-02-13 2010-08-26 Opnext Japan Inc Semiconductor laser device
WO2013085283A1 (en) * 2011-12-05 2013-06-13 주식회사 엘지화학 Polarization separation element
JP5163825B1 (en) * 2012-04-23 2013-03-13 ウシオ電機株式会社 Polarized light irradiation device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005202104A (en) * 2004-01-15 2005-07-28 Nikon Corp Method for manufacturing polarization element, polarization element, method for manufacturing picture projecting device and picture projecting device
TW200613779A (en) * 2004-10-28 2006-05-01 Ushio Electric Inc Polarizer unit and polarized light irradiation device
US20090041971A1 (en) * 2006-08-15 2009-02-12 Api Nanofabrication And Research Corp. Polarizer films and methods of making the same

Also Published As

Publication number Publication date
CN104280808B (en) 2018-03-13
JP5867460B2 (en) 2016-02-24
JP2015018016A (en) 2015-01-29
KR20150006794A (en) 2015-01-19
KR101799141B1 (en) 2017-11-17
CN104280808A (en) 2015-01-14
TW201510582A (en) 2015-03-16

Similar Documents

Publication Publication Date Title
TWI594026B (en) Grid polarizing element, optical alignment device, polarizing method and manufacturing method of grid polarizing element
TWI606266B (en) Grating polarization element
KR101809313B1 (en) Grid polarizing device and method for manufacturing grid polarizing device
TWI606267B (en) Ultraviolet polarized light ray irradiation method and manufacturing method of photo-alignment layer substrate
JP5867439B2 (en) Grid polarizing element and optical alignment apparatus
Camelio et al. Optimization of growth and ordering of Ag nanoparticle arrays on ripple patterned alumina surfaces for strong plasmonic coupling
CN105093380B (en) Inorganic polarizing plate and production method thereof
TWI565979B (en) Grating polarizer and light alignment device
TWI613467B (en) Grating polarizing element and optical alignment device
Chen et al. Fabricating bi-layered metallic wire-grid polarizers by nanoimprint and O2 plasma etching
JP6225967B2 (en) Grid polarizing element and optical alignment apparatus
TW201625992A (en) Ultraviolet-absorptive grid polarization element, and optical alignment device