TWI593836B - A method of controlling a liquid level of a melt flow - Google Patents

A method of controlling a liquid level of a melt flow Download PDF

Info

Publication number
TWI593836B
TWI593836B TW105111435A TW105111435A TWI593836B TW I593836 B TWI593836 B TW I593836B TW 105111435 A TW105111435 A TW 105111435A TW 105111435 A TW105111435 A TW 105111435A TW I593836 B TWI593836 B TW I593836B
Authority
TW
Taiwan
Prior art keywords
area
image
heat shield
liquid surface
shaded area
Prior art date
Application number
TW105111435A
Other languages
Chinese (zh)
Other versions
TW201736650A (en
Inventor
呂建興
中西正美
施英汝
林欽山
Original Assignee
環球晶圓股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 環球晶圓股份有限公司 filed Critical 環球晶圓股份有限公司
Priority to TW105111435A priority Critical patent/TWI593836B/en
Application granted granted Critical
Publication of TWI593836B publication Critical patent/TWI593836B/en
Publication of TW201736650A publication Critical patent/TW201736650A/en

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Description

熔湯液面位置的控制方法Method for controlling the position of molten soup

本發明係與晶棒鑄造有關;特別是指一種熔湯液面位置的控制方法。 The invention relates to the casting of a crystal rod; in particular to a method for controlling the position of a molten liquid surface.

習用的長晶爐,包含有一坩堝與複數個加熱器,該坩堝供容裝待熔化之原料,該些加熱器設置於該坩堝周圍,用以對該坩堝加熱使該坩堝內的原料熔化成液態的熔湯。於鑄造晶棒時,係以晶種浸入熔湯,並往將晶種往上拉提而進行引晶,終而製成晶棒。然,在鑄造晶棒的過程中,坩堝內的熔湯將會隨著晶棒的長度增長而減少,亦即熔湯液面位置是持續的下降。 The conventional crystal growth furnace comprises a crucible and a plurality of heaters for containing raw materials to be melted, and the heaters are disposed around the crucible for heating the crucible to melt the raw materials in the crucible into a liquid state Melt soup. When casting the ingot, the seed crystal is immersed in the melt, and the seed crystal is pulled up to perform seeding, and finally the crystal ingot is formed. However, in the process of casting the ingot, the melting of the crucible will decrease as the length of the ingot grows, that is, the position of the molten liquid is continuously decreased.

在熔湯液面下降後,液面所處之熱場將會改變而使液面的溫度發生變化,液面溫度變化將會導致晶棒由上到下的品質不一。特別是晶棒的身部,若身部由上到下品質不一時,將使得同一晶棒所切割而得晶圓品質相差太多。因此,必須在鑄造晶棒的過程同時控制坩堝的高度,儘量使熔湯液面維持在穩定的位置。 After the molten liquid level drops, the thermal field of the liquid surface will change and the temperature of the liquid surface will change. The change of the liquid surface temperature will result in different quality of the crystal rod from top to bottom. In particular, if the body of the ingot is of different quality from top to bottom, the wafer quality will be cut by the same ingot. Therefore, it is necessary to control the height of the crucible while casting the ingot, and to maintain the molten liquid level in a stable position as much as possible.

已知監測熔湯液面之位置的方式,包含有以人員目視、雷射光測距、量測晶棒半徑或直徑來反推液面位置的變化,然而,前述之方式的精確度不足,無法準確地得知液面位置,因此,僅能大概地控制熔湯之液面的位置。 It is known to monitor the position of the molten liquid surface, including the visual observation, the laser light ranging, the measurement of the radius of the crystal rod or the diameter to reverse the change of the liquid level position. However, the accuracy of the foregoing method is insufficient. The position of the liquid surface is accurately known, and therefore, only the position of the liquid level of the melt can be roughly controlled.

有鑑於此,本發明之目的在於提供一種熔湯液面位置的控制方法,可準確地控制熔湯液面之位置。 In view of the above, an object of the present invention is to provide a method for controlling the position of a molten liquid surface, which can accurately control the position of the molten liquid surface.

緣以達成上述目的,本發明提供的一種熔湯液面位置的控制方法,係應用於一長晶爐,該長晶爐包括一坩堝以及一遮熱罩位於該坩堝上方,該坩堝供容置熔湯,該遮熱罩具有一開口對應該坩堝內部;該控制方法包含下列步驟:A、提供一攝影模組,該攝影模組係自該遮熱罩之該開口斜上方擷取該坩堝中熔湯之液面的影像;B、取得該攝影模組所擷取的影像,並依據所取得的影像,判斷該影像中所包含的至少一陰影區域之面積;C、依據該陰影區域之面積控制該坩堝於垂直方向上的位置,使熔湯之液面與該遮熱罩之底面之間維持於一預定距離。 In order to achieve the above object, the present invention provides a method for controlling the position of a molten liquid surface, which is applied to a crystal growth furnace, wherein the crystal growth furnace includes a crucible and a heat shield disposed above the crucible. In the molten soup, the heat shield has an opening corresponding to the inside of the casing; the control method comprises the following steps: A. providing a camera module, the camera module is obtained from the upper side of the opening of the heat shield An image of the liquid surface of the molten soup; B. obtaining an image captured by the camera module, and determining an area of at least one shaded area included in the image according to the acquired image; C, according to the area of the shadow area The position of the crucible in the vertical direction is controlled such that the liquid level of the molten soup is maintained at a predetermined distance from the bottom surface of the heat shield.

本發明另提供一種熔湯液面位置的控制方法,包含下列步驟:A、提供一攝影模組,該攝影模組係自該遮熱罩之該開口斜上方擷取該坩堝中熔湯之液面的影像;B、於鑄造該晶棒之身部的過程中,持續取得該攝影模組所擷取的影像,並依據所取得的影像,對應該影像中所包含的至少一陰影區域之面積;C、依據該影像中該陰影區域之面積控制該坩堝於垂直方向上的位置,使該陰影區域之面積維持於一預定面積。 The present invention further provides a method for controlling the position of a molten liquid surface, comprising the following steps: A. providing a photographic module, the photographic module picking up the molten broth from the opening of the opening of the heat absorbing cover The image of the face; B, in the process of casting the body of the ingot, continuously obtaining the image captured by the camera module, and corresponding to the image obtained, corresponding to the area of at least one shaded area included in the image C. Control the position of the 坩埚 in the vertical direction according to the area of the shadow area in the image, so that the area of the shadow area is maintained at a predetermined area.

本發明之效果在於,藉由判斷影像中陰影區域的面積,可精確地判斷坩堝中熔湯液面的位置,據以精確地控制坩堝移動,讓液面處於穩定的熱場。 The effect of the present invention is that by judging the area of the shaded area in the image, the position of the molten liquid level in the sputum can be accurately determined, so that the movement of the sputum can be accurately controlled so that the liquid surface is in a stable thermal field.

〔本發明〕 〔this invention〕

100‧‧‧長晶爐 100‧‧‧Crystal furnace

10‧‧‧爐體 10‧‧‧ furnace body

102‧‧‧觀測口 102‧‧‧ Observatory

20‧‧‧坩堝 20‧‧‧坩埚

30‧‧‧加熱器 30‧‧‧heater

40‧‧‧遮熱罩 40‧‧‧heat shield

42‧‧‧通道 42‧‧‧ channel

44‧‧‧底面 44‧‧‧ bottom

442‧‧‧開口 442‧‧‧ openings

50‧‧‧第一驅動裝置 50‧‧‧First drive

52‧‧‧第二驅動裝置 52‧‧‧Second drive

54‧‧‧支撐座 54‧‧‧ support

60‧‧‧熔湯 60‧‧‧ molten soup

602‧‧‧液面 602‧‧‧ liquid level

70‧‧‧拉晶桿 70‧‧‧ pull rod

72‧‧‧晶種 72‧‧‧ seed crystal

74‧‧‧晶棒 74‧‧‧Ingot

80‧‧‧攝影模組 80‧‧‧Photography module

82‧‧‧控制裝置 82‧‧‧Control device

L1、L2‧‧‧距離 L1, L2‧‧‧ distance

S1、S2、S3‧‧‧陰影區域 S1, S2, S3‧‧‧ shadow area

圖1為本發明第一較佳實施例之熔湯液面位置的控制方法所應用的長晶爐。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a crystal growth furnace to which a method for controlling the position of a molten liquid surface according to a first preferred embodiment of the present invention is applied.

圖2為本發明第一較佳實施例熔湯液面位置的控制方法之流程圖。 2 is a flow chart showing a method for controlling the position of a molten liquid surface according to a first preferred embodiment of the present invention.

圖3、圖4為示意圖,揭示液面與遮熱罩底面之間的距離與影像中陰影區域之關係。 3 and 4 are schematic views showing the relationship between the distance between the liquid surface and the bottom surface of the heat shield and the shaded area in the image.

圖5為鑄造晶棒身部過程中,攝影模組擷取之局部影像。 Figure 5 is a partial image captured by the camera module during the process of casting the body of the ingot.

圖6為本發明第二較佳實施例熔湯液面位置的控制方法之流程圖。 Figure 6 is a flow chart showing a method of controlling the position of a molten liquid in a second preferred embodiment of the present invention.

為能更清楚地說明本發明,茲舉一較佳實施例並配合圖式詳細說明如後。請參圖1所示,為本發明第一較佳實施例之熔湯液面位置的控制方法所應用的長晶爐100,該長晶爐100包含有一爐體10、一坩堝20、複數個加熱器30、一遮熱罩40、一第一驅動裝置50、一第二驅動裝置52。 In order to explain the present invention more clearly, a preferred embodiment will be described in detail with reference to the drawings. Referring to FIG. 1 , a crystal growth furnace 100 is applied to a method for controlling the position of a molten liquid surface according to a first preferred embodiment of the present invention. The crystal growth furnace 100 includes a furnace body 10 , a crucible 20 , and a plurality of The heater 30, a heat shield 40, a first driving device 50, and a second driving device 52.

該爐體10之右上半部具有一觀測口102連通該爐體10內部。該坩堝20設置於該爐體10內的一支撐座54上,該坩堝20供放置待熔化之原料(例如,固態的矽原料)。該些加熱器30設置於該坩堝20外圍,用以加熱該坩堝20,使該坩堝20內部之原料熔化成熔湯60。該遮熱罩40設置於該坩堝20上方,用以防止部分熱能由熔湯60的液面602逸散,該遮熱罩40具有一通道42,該通道42係呈上寬下窄的錐狀,且該通道42於該遮熱罩40的底面44形有一圓形的開口442對應該坩堝20內部。該第一驅動裝置50設置於該爐體10上方,該第一驅動裝置50用以帶動一拉晶桿 70轉動及上下移動,該拉晶桿70的底端設置有一晶種72,該拉晶桿70係自該遮熱罩40的通道42伸入該坩堝20中,使該晶種72接觸熔湯60以供引晶形成晶棒74。該第二驅動裝置52用以帶動該支撐座54上、下移動,進而帶動該坩堝20於垂直方向上位移。 The upper right half of the furnace body 10 has an observation port 102 communicating with the inside of the furnace body 10. The crucible 20 is disposed on a support seat 54 in the furnace body 10 for placing a raw material to be melted (for example, a solid crucible material). The heaters 30 are disposed on the periphery of the crucible 20 for heating the crucible 20 to melt the raw material inside the crucible 20 into the melt 60. The heat shield 40 is disposed above the crucible 20 to prevent part of the thermal energy from escaping from the liquid surface 602 of the melt 60. The heat shield 40 has a passage 42 which is a wide and narrow tapered shape. And the channel 42 has a circular opening 442 corresponding to the bottom surface 44 of the heat shield 40 corresponding to the inside of the crucible 20. The first driving device 50 is disposed above the furnace body 10, and the first driving device 50 is used to drive a pull rod 70 rotation and up and down movement, the bottom end of the crystal pulling rod 70 is provided with a seed crystal 72, the pull rod 70 is inserted into the crucible 20 from the passage 42 of the heat shield 40, so that the seed crystal 72 contacts the melt 60 is used for seeding to form the ingot 74. The second driving device 52 is configured to drive the support base 54 to move up and down, thereby driving the crucible 20 to be displaced in the vertical direction.

藉由上述之長晶爐100,即可進行圖2所示之下列步驟:首先,提供一攝影模組80與一控制裝置82,將該攝影模組80裝設於該爐體10上且位於對應該觀測口102處,使該攝影模組80由右上往左下的方向傾斜地拍攝下方之影像。該攝影模組80的視角涵蓋該遮熱罩40之通道42的下半部,以及位於該通道42下方的熔湯60之液面602。換言之,該攝影模組80自該遮熱罩40之該開口442斜上方擷取該坩堝20中熔湯60之液面602的影像。該遮熱罩40的底面44將反映在熔湯60的液面602,而形成陰影。該控制裝置82電性連接該攝影模組80及該第二驅動裝置52,用以接收該攝影模組80所擷取之影像,並做後處續的分析及運算,以及令該第二驅動裝置52驅動該坩堝20移動。 The following steps shown in FIG. 2 can be performed by using the crystal growth furnace 100 described above: First, a photographic module 80 and a control device 82 are provided, and the photographic module 80 is mounted on the furnace body 10 and located at Corresponding to the observing port 102, the camera module 80 is photographed obliquely from the upper right to the lower left direction. The viewing angle of the photographic module 80 encompasses the lower half of the channel 42 of the heat shield 40 and the level 602 of the melt 60 below the channel 42. In other words, the camera module 80 captures an image of the liquid level 602 of the melt 60 in the crucible 20 from obliquely above the opening 442 of the heat shield 40. The bottom surface 44 of the heat shield 40 will be reflected on the liquid level 602 of the melt 60 to form a shadow. The control device 82 is electrically connected to the camera module 80 and the second driving device 52 for receiving the image captured by the camera module 80, performing subsequent analysis and calculation, and making the second driver Device 52 drives the cassette 20 to move.

請配合圖3與圖4所示,說明熔湯60液面602至該遮熱罩40底面44之距離與該攝影模組80所擷取之影像的關係,為便於理解,圖3與圖4中係以晶種72浸入熔湯60之前的階段說明,因此,圖中無晶棒74存在。由於該攝影模組80係由右上往左下的方向拍攝,且圖3中的遮熱罩40底面44與液面602之間的距離L1較近,該遮熱罩40的底面44反映在熔湯60液面602的陰影被該遮熱罩40遮住的部分較多,因此,圖3中影像中液面602上的陰影區域S1較小。反觀圖4,該遮熱罩40底面44與液面之間的距離L2較遠,該遮熱罩40的底面44反映在液面602的陰影被該遮熱罩40遮住的部分較多,因此,圖4的影像中液面602上的陰影區域S2較大。基於前述之原理,即可由該攝影模組80所擷取之影像分析陰 影區域的面積,而對應熔湯60之液面602至該遮熱罩40底面44之間的距離。 Please refer to FIG. 3 and FIG. 4 to illustrate the relationship between the distance between the liquid surface 602 of the molten stone 60 and the bottom surface 44 of the heat shield 40 and the image captured by the camera module 80. For ease of understanding, FIG. 3 and FIG. 4 The middle portion is described in the stage before the seed crystal 72 is immersed in the melt 60, and therefore, the amorphous rod 74 is present in the drawing. Since the photographic module 80 is photographed from the upper right to the lower left direction, and the distance L1 between the bottom surface 44 of the heat shield 40 and the liquid surface 602 in FIG. 3 is relatively close, the bottom surface 44 of the heat shield 40 is reflected in the melt. The shadow of the 60 liquid surface 602 is largely covered by the heat shield 40, and therefore, the shaded area S1 on the liquid surface 602 in the image in Fig. 3 is small. 4, the bottom surface 44 of the heat shield 40 is far from the liquid surface L2, and the bottom surface 44 of the heat shield 40 reflects that the shadow of the liquid surface 602 is blocked by the heat shield 40. Therefore, the shaded area S2 on the liquid surface 602 in the image of Fig. 4 is large. Based on the foregoing principles, the image captured by the camera module 80 can be analyzed. The area of the shadow area corresponds to the distance between the liquid level 602 of the melt 60 and the bottom surface 44 of the heat shield 40.

請配合圖5所示,說明在鑄造晶棒74身部的過程中,該攝影模組80所擷取的影像,影像中包含了該遮熱罩40之通道42的下半部、晶棒74的身部、熔湯60之液面602以及該遮熱罩40之底面44反映在液面602的陰影區域S3。在圖5之影像中,位於中間的陰影區域被晶棒的身部所遮擋,因此,在影像中具有二個陰影區域S3。本實施例後續的步驟中即是在鑄造晶棒74身部的過程進行。 Referring to FIG. 5, the image captured by the camera module 80 during the process of casting the body of the ingot 74 includes the lower half of the passage 42 of the heat shield 40 and the ingot 74. The body portion, the liquid surface 602 of the melter 60, and the bottom surface 44 of the heat shield 40 are reflected in the shaded area S3 of the liquid level 602. In the image of Fig. 5, the shaded area in the middle is blocked by the body of the ingot, so that there are two shaded areas S3 in the image. The subsequent steps of this embodiment are carried out in the process of casting the body of the ingot 74.

在鑄造晶棒74身部的過程中,先設定複數個不同的參考位置,再透過該第二驅動裝置52驅動該坩堝20往上或往下移動使熔湯60之液面602分別移動至各該參考位置,並記錄液面602於各該參考位置時,熔湯60之液面602與該遮熱罩40底面44之間的距離以及該攝影模組80所擷取的影像中該二陰影區域S3的面積,以形成複數個不同的參考距離與複數個不同的參考面積,其中該些參考距離係熔湯60之液面602分別於該些參考位置時,熔湯60之液面602與該遮熱罩40之底面44之間的距離,該些參考面積係熔湯60之液面602分別於該些參考位置時,該遮熱罩40投影於熔湯60之液面602所形成的陰影區域之面積。本實施例中,陰影區域S3之面積是以計算影像中陰影區域S3的像素之數量而得。 In the process of casting the body of the ingot 74, a plurality of different reference positions are first set, and then the second driving device 52 is driven to move the crucible 20 upward or downward to move the liquid surface 602 of the melt 60 to each The reference position, and recording the liquid level 602 at each of the reference positions, the distance between the liquid surface 602 of the melt 60 and the bottom surface 44 of the heat shield 40, and the two shadows in the image captured by the camera module 80 The area of the region S3 is formed to form a plurality of different reference distances and a plurality of different reference areas, wherein the reference distances are the liquid level 602 of the melt 60 at the reference positions, respectively, the liquid level 602 of the melt 60 The distance between the bottom surfaces 44 of the heat shields 40, which are formed by the liquid surface 602 of the melt 60 when the liquid level 602 of the melt 60 is respectively at the reference positions. The area of the shaded area. In the present embodiment, the area of the shaded area S3 is obtained by calculating the number of pixels of the shaded area S3 in the image.

請參下表一,為在二個參考位置時坩堝位置與陰影區域像素數量的對照表,其中,坩堝位置係液面602高度分別於參考位置一與參考位置二時,該支撐座54上光學尺(圖未示)所量得的數據,亦即,坩堝位置是對應液面602的高度。由於參考位置二高於參考位置一,經由坩堝位置的差異及陰影區域像素數量的差異計算後,可知陰影區域S3面積每增加或減少一個像素,則對應坩堝20距離0.6292μm的變化。換言之, 熔湯60之液面602與遮熱罩40底面44之間的距離每增加0.6292μm,影像中陰影區域S3像素的數量便會增加1個,反之亦然。藉此,在鑄造晶棒74身部的階段中,藉由影像中陰影區域S3像素變化即可精確得知熔湯60液面602位置的變化,其解析度可達到0.6292μm/pixel。 Please refer to the following table, which is a comparison table between the position of the 坩埚 position and the number of pixels in the shadow area at the two reference positions, wherein the height of the 坩埚 position of the liquid level 602 is two at the reference position and the reference position, respectively. The data measured by the ruler (not shown), that is, the position of the 坩埚 is the height corresponding to the liquid level 602. Since the reference position 2 is higher than the reference position one, after the difference between the 坩埚 position and the difference in the number of pixels in the shadow area, it can be seen that the area of the shadow area S3 is increased by one pixel or decreased by 0.692 μm. In other words, For every 0.6292 μm increase in the distance between the liquid level 602 of the melt 60 and the bottom surface 44 of the heat shield 40, the number of pixels in the shaded area S3 in the image is increased by one, and vice versa. Thereby, in the stage of casting the body of the ingot 74, the change of the position of the liquid surface 602 of the melt 60 can be accurately obtained by the pixel change of the shaded area S3 in the image, and the resolution can reach 0.6292 μm/pixel.

由於該些參考距離與該些參考面積是呈正比關係,因此,再以該些參考距離與該些參考面積進行線性回歸運算即可建立一運算式,其中該運算式為:Gap=α×Area+β Since the reference distances are proportional to the reference areas, an arithmetic expression can be established by performing linear regression operations on the reference distances and the reference areas, wherein the operation formula is: Gap=α×Area +β

其中,Gap為熔湯之液面602與該遮熱罩40之底面之間的距離,Area為該遮熱罩40投影於該液面602所形成的陰影區域之面積,α為比例值,β為常數。 Wherein, Gap is the distance between the liquid surface 602 of the molten soup and the bottom surface of the heat shield 40, and Area is the area of the shaded area formed by the heat shield 40 projected on the liquid surface 602, and α is a proportional value, β Is a constant.

將該運算式建立於該控制裝置82中,以構成一對應關係,該運算式係供後續計算熔湯60之液面602與該遮熱罩40底面44之間的距離。 The arithmetic expression is established in the control device 82 to form a correspondence for calculating the distance between the liquid surface 602 of the melt 60 and the bottom surface 44 of the heat shield 40.

而後,在長晶爐100每一次鑄造晶棒74身部的階段時,即可進行以下步驟: 由該控制裝置82持續取得該攝影模組80所擷取的影像,並分析所取得的影像,以判斷該影像中所包含的至少一陰影區域S3之面積,本實施例中該控制裝置82係依據該影像中該二陰影區域S3的像素的數量對應該晶棒74身部兩側的該二陰影區域S3的面積。 Then, each time the crystal growth furnace 100 is casting the body of the ingot 74, the following steps can be performed: The control device 82 continuously acquires the image captured by the camera module 80, and analyzes the acquired image to determine the area of at least one shaded region S3 included in the image. In this embodiment, the control device 82 is configured. The area of the two shaded areas S3 on both sides of the body of the ingot 74 corresponds to the number of pixels in the two shaded areas S3 in the image.

該控制裝置82依據該二陰影區域S3之面積令該第二驅動裝置52控制該坩堝20於垂直方向上的位置,使熔湯60之液面602與該遮熱罩40之底面44之間維持於一預定距離。本實施例中,係依據該影像中的陰影區域S3之面積代入該運算式,令該運算式中的Area為所取得的陰影區域S3之面積(即陰影區域S3的像素數量),並進行計算,而取得熔湯60液面602與該遮熱罩40之底面44之間的距離。而後,該控制裝置82再依據計算的距離令該第二驅動裝置52改變該坩堝20於垂直方向上的位置,使熔湯60之液面602與該遮熱罩40之底面44之間維持於該預定距離。 The control device 82 causes the second driving device 52 to control the position of the crucible 20 in the vertical direction according to the area of the two shaded regions S3 to maintain the liquid surface 602 of the melt 60 and the bottom surface 44 of the heat shield 40. At a predetermined distance. In this embodiment, the calculation formula is substituted according to the area of the shaded area S3 in the image, and the area in the calculation formula is the area of the obtained shaded area S3 (ie, the number of pixels in the shaded area S3), and is calculated. The distance between the molten stone 60 liquid surface 602 and the bottom surface 44 of the heat shield 40 is obtained. Then, the control device 82 causes the second driving device 52 to change the position of the crucible 20 in the vertical direction according to the calculated distance, so that the liquid surface 602 of the melt 60 and the bottom surface 44 of the heat shield 40 are maintained between The predetermined distance.

藉由上述之步驟,每次於鑄造晶棒74身部時,該控制裝置82即可持續地取得影像,由影像中的陰影區域面積計算熔湯60之液面602與該遮熱罩40之底面44之間的距離,據以控制該坩堝20,使熔湯60之液面602與該遮熱罩40之底面44之間維持於該預定距離,讓液面602處於穩定的熱場中,藉此,使晶棒74身部的品質由上到下維持一定。 By the above steps, each time the body of the ingot 74 is cast, the control device 82 can continuously acquire an image, and the liquid surface 602 of the melt 60 and the heat shield 40 are calculated from the area of the shaded area in the image. The distance between the bottom surfaces 44 is controlled to maintain the crucible 20 such that the liquid level 602 of the melt 60 and the bottom surface 44 of the heat shield 40 are maintained at the predetermined distance, so that the liquid surface 602 is in a stable thermal field. Thereby, the quality of the body of the ingot 74 is maintained constant from top to bottom.

前述中係以運算式計算距離,在實務上,亦可將該些參考距離與該些參考面積建立成一對應表儲存於該控制裝置82中,以構成一對應關係。而後,該控制裝置82依據陰影區域S3之面積與該對應表進行比對,以取得熔湯60液面602與該遮熱罩40之底面44之間的距離。 In the foregoing, the distance is calculated by an arithmetic expression. In practice, the reference distances and the reference areas may be stored in a correspondence table and stored in the control device 82 to form a corresponding relationship. Then, the control device 82 compares the area of the shaded area S3 with the correspondence table to obtain the distance between the liquid surface 602 of the melt 60 and the bottom surface 44 of the heat shield 40.

上述實施例是依據陰影區域S3之面積對應液面602與遮熱罩40底面44之間的距離而控制坩堝20移動,以下再說明本發明第二較佳實施例之熔湯液面位置的控制方法,同樣可以持維液面602的位置。 In the above embodiment, the movement of the crucible 20 is controlled according to the distance between the liquid surface 602 and the bottom surface 44 of the heat shield 40 according to the area of the shaded area S3. The control of the molten liquid level position of the second preferred embodiment of the present invention will be described below. The method can also hold the position of the liquid level 602.

請配合圖6所示,本實施例之控制方法具有大致相同於第一實施例之步驟,不同的是,本實施例中未建立對應關係,而是於鑄造晶棒74之身部的過程中,由該控制裝置82持續取得該攝影模組80所擷取的影像(同圖5之影像),並依據所取得的影像,對應該影像所包含的至少一陰影區域S3之面積,本實施例為該二陰影區域S3之面積。 Please refer to FIG. 6 , the control method of the embodiment has the same steps as the first embodiment, except that the corresponding relationship is not established in the embodiment, but in the process of casting the body of the ingot 74 . The control device 82 continuously acquires the image captured by the camera module 80 (the same image as FIG. 5), and correspondingly determines the area of the at least one shaded region S3 included in the image according to the acquired image. Is the area of the two shaded area S3.

該控制裝置82再依據該二陰影區域S3之面積令該第二驅動裝置52控制該坩堝20於垂直方向上的位置,使該二陰影區域S3之面積的總合維持於一預定面積,其中,在該二陰影區域S3之面積的總合大於該預定面積時,控制該坩堝20往上移動使該二陰影區域S3之面積減少,以維持於該預定面積;在該二陰影區域S3之面積的總合小於該預定面積時,控制該坩堝20往下移動使該二陰影區域S3之面積增加,以維持於該預定面積。換言之,陰影區域S3之面積維持於該預定面積,即代表熔湯60之液面602與遮熱罩40底面44之間的距離維持一定,使液面處於穩定的熱場中。所判斷之液面位置的最小變化量同樣可以達到0.6292μm。 The control device 82 further controls the position of the second driving device 52 in the vertical direction according to the area of the two shaded regions S3, so that the total area of the two shaded regions S3 is maintained at a predetermined area. When the sum of the areas of the two shaded areas S3 is greater than the predetermined area, controlling the upward movement of the crucible 20 reduces the area of the two shaded areas S3 to maintain the predetermined area; the area of the two shaded areas S3 When the total is smaller than the predetermined area, the movement of the crucible 20 is controlled to increase the area of the two shaded areas S3 to maintain the predetermined area. In other words, the area of the shaded area S3 is maintained at the predetermined area, i.e., the distance between the liquid level 602 representing the melt 60 and the bottom surface 44 of the heat shield 40 is maintained constant, so that the liquid level is in a stable thermal field. The minimum amount of change in the liquid level position judged can also reach 0.6292 μm.

據上所述,本發明熔湯液面位置的控制方法藉由監測影像中的陰影區積之面積,可精確地判斷坩堝中熔湯液面的位置,據以精確地控制坩堝移動,讓鑄造晶棒身部的過程中,液面處於穩定的熱場,以使晶棒身部的品質由上到下維持一定。 According to the above, the method for controlling the position of the molten liquid surface of the present invention can accurately determine the position of the molten liquid level in the sputum by monitoring the area of the shadow area in the image, thereby accurately controlling the movement of the sputum and allowing the casting During the process of the body of the ingot, the liquid surface is in a stable thermal field, so that the quality of the body of the ingot is maintained from top to bottom.

以上所述僅為本發明較佳可行實施例而已,舉凡應用本發明說明書及申請專利範圍所為之等效變化,理應包含在本發明之專利範圍內。 The above is only a preferred embodiment of the present invention, and equivalent changes to the scope of the present invention and the scope of the patent application are intended to be included in the scope of the present invention.

Claims (10)

一種熔湯液面位置的控制方法,係應用於一長晶爐,該長晶爐包括一坩堝以及一遮熱罩位於該坩堝上方,該坩堝供容置熔湯,該遮熱罩具有一開口對應該坩堝內部;該控制方法包含下列步驟:A、提供一攝影模組,該攝影模組係自該遮熱罩之該開口斜上方擷取該坩堝中熔湯之液面的影像,且影像中包含有該遮熱罩投影於熔湯之液面所形成的至少一陰影區域;B、取得該攝影模組所擷取的影像,並依據所取得的影像,判斷該影像中所包含的該陰影區域之面積,其中該陰影區域之面積係對應熔湯之液面與該遮熱罩之底面之間的距離;C、依據該陰影區域之面積控制該坩堝於垂直方向上的位置,使熔湯之液面與該遮熱罩之底面之間維持於一預定距離。 A method for controlling the position of a molten liquid surface is applied to a crystal growth furnace, wherein the crystal growth furnace includes a crucible and a heat shield disposed above the crucible, the crucible is for containing a melting furnace, and the heat shield has an opening The control method includes the following steps: A. providing a photographic module, the photographic module picking up an image of the liquid level of the simmering soup from the opening of the opening of the heat absorbing cover, and the image Included in the at least one shaded area formed by the liquid cover projected on the liquid surface of the molten soup; B, obtaining an image captured by the camera module, and determining the image included in the image according to the acquired image The area of the shaded area, wherein the area of the shaded area corresponds to the distance between the liquid surface of the molten soup and the bottom surface of the heat shield; C, according to the area of the shaded area, the position of the horizontal direction is controlled to melt The liquid level of the soup is maintained at a predetermined distance from the bottom surface of the heat shield. 如請求項1所述之熔湯液面位置的控制方法,其中步驟C係依據該陰影區域的面積對應該遮熱罩之底面與熔湯液面之間的一距離,再依據該距離控制該坩堝於垂直方向上的位置,使熔湯之液面與該遮熱罩之底面之間維持於該預定距離。 The method for controlling the position of the molten liquid surface according to claim 1, wherein the step C is based on the area of the shaded area corresponding to a distance between the bottom surface of the heat shield and the molten liquid surface, and then the distance is controlled according to the distance. The position in the vertical direction maintains the predetermined distance between the liquid level of the melt and the bottom surface of the heat shield. 如請求項2所述之熔湯液面位置的控制方法,其中步驟B之前更包含建立複數個不同的參考距離與複數個不同的參考面積的一對應關係,其中該些參考距離係熔湯之液面分別於不同的參考位置時,熔湯之液面與該遮熱罩之底面之間的距離,且該些參考面積係熔湯之液面分別於該些參考位置時,該遮熱罩投影於熔湯之液面所形成的陰影區域之面積;步驟C中係依據該陰影區域之面積與該對應關係,取得熔湯液面與該遮熱罩之底面之間的該距離。 The method for controlling the position of the molten liquid surface according to claim 2, wherein the step B further comprises establishing a correspondence between the plurality of different reference distances and the plurality of different reference areas, wherein the reference distances are melted The distance between the liquid level of the molten soup and the bottom surface of the heat shield when the liquid level is respectively at different reference positions, and the reference areas are the liquid levels of the molten soup respectively at the reference positions, the heat shield The area of the shaded area formed by the liquid surface of the molten soup is projected; in step C, the distance between the molten liquid surface and the bottom surface of the heat shield is obtained according to the corresponding relationship between the area of the shaded area and the corresponding relationship. 如請求項3所述之熔湯液面位置的控制方法,其中步驟B之前包含以該些參考距離與該些參考面積進行線性回歸運算,以建立一運算式,該運算式構成該對應關係,其中該運算式為:Gap=α×Area+β,其中,Gap為熔湯之液面與該遮熱罩之底面之間的距離,Area為該遮熱罩投影於該液面所形成的陰影區域之面積,α為比例值,β為常數;步驟C中係令該運算式中的Area為該影像中該陰影區域之面積以計算該距離。 The method for controlling the position of the molten liquid surface according to claim 3, wherein the step B includes performing a linear regression operation on the reference distances and the reference areas to establish an operation formula, and the operation formula constitutes the correspondence relationship. Wherein the calculation formula is: Gap=α×Area+β, wherein Gap is the distance between the liquid surface of the melt and the bottom surface of the heat shield, and Area is the shadow formed by the heat shield projected on the liquid surface. The area of the area, α is the proportional value, and β is a constant; in step C, the Area in the expression is the area of the shaded area in the image to calculate the distance. 如請求項3所述之熔湯液面位置的控制方法,其中步驟B之前係將該些參考距離與該些參考面積建立成一對應表,該對應表構成該對應關係;步驟C中係將該影像中該陰影區域之面積與該對應表進行比對,以取得該距離。 The method for controlling the position of the molten liquid surface according to claim 3, wherein before step B, the reference distances are formed into a correspondence table with the reference areas, and the correspondence table constitutes the correspondence relationship; The area of the shaded area in the image is compared to the corresponding table to obtain the distance. 如請求項1所述之熔湯液面位置的控制方法,其中步驟B中係依據該影像中該陰影區域的像素的數量對應該陰影區域的面積。 The method for controlling the position of the molten liquid surface according to claim 1, wherein in step B, the area of the shaded area is corresponding according to the number of pixels of the shaded area in the image. 一種熔湯液面位置的控制方法,係應用於一長晶爐,該長晶爐包括一坩堝以及一遮熱罩位於該坩堝上方,該坩堝供容置熔湯,該遮熱罩具有一開口對應該坩堝內部,該坩堝中的熔湯用以供鑄造一晶棒;該控制方法包含下列步驟:A、提供一攝影模組,該攝影模組係自該遮熱罩之該開口斜上方擷取該坩堝中熔湯之液面的影像,且影像中包含有該遮熱罩投影於熔湯之液面所形成的至少一陰影區域;B、於鑄造該晶棒之身部的過程中,持續取得該攝影模組所擷取的影像,並依據所取得的影像,對應該影像中所包含的該陰影區域之面積, 其中該陰影區域之面積係對應熔湯之液面與該遮熱罩之底面之間的距離;C、依據該影像中該陰影區域之面積控制該坩堝於垂直方向上的位置,使該陰影區域之面積維持於一預定面積。 A method for controlling the position of a molten liquid surface is applied to a crystal growth furnace, wherein the crystal growth furnace includes a crucible and a heat shield disposed above the crucible, the crucible is for containing a melting furnace, and the heat shield has an opening Corresponding to the inside, the molten soup in the crucible is used for casting a crystal rod; the control method comprises the following steps: A. providing a photography module, the photography module is obliquely above the opening of the heat shield. Taking an image of the liquid surface of the melted soup, and the image includes at least one shaded area formed by the heat shield projected on the liquid surface of the melt; B, in the process of casting the body of the ingot, Continuously obtaining the image captured by the camera module, and according to the acquired image, corresponding to the area of the shaded area included in the image, Wherein the area of the shaded area corresponds to the distance between the liquid surface of the molten soup and the bottom surface of the heat shield; C. controlling the position of the horizontal direction in the shaded area according to the area of the shaded area in the image, so that the shaded area The area is maintained at a predetermined area. 如請求項7所述之熔湯液面位置的控制方法,其中步驟B中係依據該影像中該陰影區域的像素的數量對應該陰影區域的面積。 The method for controlling the position of the molten liquid surface according to claim 7, wherein in step B, the area of the shaded area is corresponding according to the number of pixels of the shaded area in the image. 如請求項7所述之熔湯液面位置的控制方法,其中步驟C中係將該影像中該陰影區域之面積與該預定面積比對,在該陰影區域之面積大於該預定面積時,控制該坩堝往上移動使該陰影區域之面積減少,以維持於該預定面積。 The method for controlling the position of a molten liquid surface according to claim 7, wherein in step C, the area of the shaded area in the image is compared with the predetermined area, and when the area of the shaded area is larger than the predetermined area, the control is performed. The upward movement of the weir reduces the area of the shaded area to maintain the predetermined area. 如請求項7所述之熔湯液面位置的控制方法,其中步驟C中係將該影像中該陰影區域之面積與該預定面積比對,在該陰影區域之面積小於該預定面積時,控制該坩堝往下移動使該陰影區域之面積增加,以維持於該預定面積。 The method for controlling the position of the molten liquid surface according to claim 7, wherein in step C, the area of the shaded area in the image is compared with the predetermined area, and when the area of the shaded area is smaller than the predetermined area, the control is performed. The movement of the crucible moves the area of the shaded area to maintain the predetermined area.
TW105111435A 2016-04-13 2016-04-13 A method of controlling a liquid level of a melt flow TWI593836B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW105111435A TWI593836B (en) 2016-04-13 2016-04-13 A method of controlling a liquid level of a melt flow

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW105111435A TWI593836B (en) 2016-04-13 2016-04-13 A method of controlling a liquid level of a melt flow

Publications (2)

Publication Number Publication Date
TWI593836B true TWI593836B (en) 2017-08-01
TW201736650A TW201736650A (en) 2017-10-16

Family

ID=60189053

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105111435A TWI593836B (en) 2016-04-13 2016-04-13 A method of controlling a liquid level of a melt flow

Country Status (1)

Country Link
TW (1) TWI593836B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110284184A (en) * 2019-07-26 2019-09-27 内蒙古中环协鑫光伏材料有限公司 A kind of pulling of crystals liquid level protection system and its control method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040221794A1 (en) * 2003-05-06 2004-11-11 Sumitomo Mitsubishi Silicon Corporation Device and method for measuring position of liquid surface of melt in single-crystal-growing apparatus
JP2007290906A (en) * 2006-04-25 2007-11-08 Shin Etsu Handotai Co Ltd Method of measuring distance between reference reflector and melt surface, method of controlling melt surface level by using the measured result, and apparatus for manufacturing silicon single crystal
TWI289614B (en) * 2000-09-26 2007-11-11 Shinetsu Handotai Kk Method of manufacturing silicon monocrystal and device for manufacturing semiconductor monocrystal
US20090064923A1 (en) * 2007-08-29 2009-03-12 Sumco Corporation Silicon single crystal pulling method
TW201500723A (en) * 2013-06-28 2015-01-01 Univ Nat Taiwan Ocean Module for measuring the height of a liquid surface

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI289614B (en) * 2000-09-26 2007-11-11 Shinetsu Handotai Kk Method of manufacturing silicon monocrystal and device for manufacturing semiconductor monocrystal
US20040221794A1 (en) * 2003-05-06 2004-11-11 Sumitomo Mitsubishi Silicon Corporation Device and method for measuring position of liquid surface of melt in single-crystal-growing apparatus
JP2007290906A (en) * 2006-04-25 2007-11-08 Shin Etsu Handotai Co Ltd Method of measuring distance between reference reflector and melt surface, method of controlling melt surface level by using the measured result, and apparatus for manufacturing silicon single crystal
US20090064923A1 (en) * 2007-08-29 2009-03-12 Sumco Corporation Silicon single crystal pulling method
TW201500723A (en) * 2013-06-28 2015-01-01 Univ Nat Taiwan Ocean Module for measuring the height of a liquid surface

Also Published As

Publication number Publication date
TW201736650A (en) 2017-10-16

Similar Documents

Publication Publication Date Title
TWI395842B (en) Silicon single crystal pulling method
JP4561513B2 (en) Liquid surface position adjusting mechanism and liquid surface position adjusting method of single crystal pulling apparatus, liquid surface position adjusting mechanism and liquid surface aligning method of single crystal pulling apparatus
TWI588304B (en) Single crystal manufacturing method
TWI675131B (en) Method and device for manufacturing single crystal
US20160312379A1 (en) Melt gap measuring apparatus, crystal growth apparatus and melt gap measuring method
JP6477356B2 (en) Single crystal manufacturing method and manufacturing apparatus
TWI593836B (en) A method of controlling a liquid level of a melt flow
JP4339282B2 (en) Single crystal diameter measuring device
TW201732097A (en) Single crystal manufacturing method and device
TW201702438A (en) Measurement method of gap between liquid level of raw material melt and lower end of seed, preheating method of seed and manufacturing method of single crystal
KR20010043549A (en) Crystal growth apparatus and method
TWI782726B (en) Manufacturing method of single crystal
JP4056206B2 (en) Ribbon crystal growth method and apparatus
KR102488064B1 (en) Single-crystal ingot growth apparatus and method of controlling the same
JPH04328425A (en) Method and apparatus for measuring position of liquid level and method and apparatus for lifting up single crystal
TWI785410B (en) Single crystal production system and single crystal production method
KR102147461B1 (en) Apparatus for growing monocrystalline ingot
TWI828140B (en) Method and apparatus for manufacturing single crystal
KR20230150800A (en) Method for detecting the surface condition of raw material melt, method for manufacturing single crystals, and apparatus for manufacturing CZ single crystals
RU2227819C1 (en) Method of control of level of melt in crucible in the course of crystal growth
TW202344722A (en) Method and device for manufacturing silicon single crystal and method for manufacturing silicon wafer
JP2024038702A (en) Silicon single crystal manufacturing system and manufacturing method
JP2016121071A (en) Single crystal pulling method