TWI593205B - High-voltage device end processing method and high-voltage device manufacturing method - Google Patents

Description

High voltage device end processing method and method of manufacturing high voltage device

The high voltage device end processing method of the invention is suitable for wall bushings, circuit breaker bushings, combined electrical bushings, transformer bushings, current transformer bushings, U-shaped bushings, cable terminals in high voltage 6kV to 1000kV It is used in high voltage devices such as connectors, cable intermediate heads, and bus bars. It does not breakdown or flashover in the rated operating voltage and test voltage, achieving maintenance-free operation.

1. Existing high-voltage cable heads have defects: the end surface of the cable head is treated with a stress cone. Because the end of the cable head is inductively grounded with the stress cone, it is a single point to partially discharge the end electric field, but the end of the cable head is still very high. High, there is dirt on the surface of the cable head, and it is easy to cause flashover explosion after damp. Similar to the following: China Patent No. 02289499.3, a dry flexible electric terminal; China Patent No. 99225039.0 heat-shrinkable cable terminal; China Patent No. 00255452.6 double-layer stress-distributed cross-linked cable terminal; China Patent No. 01256795.7 Normal-temperature contracted power cable terminal Chinese Patent No. 200610124043.6, a rigid dry high voltage cable terminal; Chinese Patent No. 200910162807.4, a dry cable terminal; Chinese Patent No. 03271395.9, a rigid dry high voltage cable termination; Chinese Patent No. 200820070487.0, a cable end; Chinese patent No. 200820189411.X A porcelain sleeve type dry medium voltage cable terminal head; Chinese patent number 200820121622.X a cable terminal head.

2, the existing high-voltage bushing manufacturing technology is the use of capacitor core structure, its defects: from the zero screen on the conductor, from one screen to the last screen induction to the grounding screen induction grounding, just The upper layer and the lower layer point-to-point partially release the electric field at the end of the sleeve. Actually, only the final screen and the grounding screen directly inductively ground, but the potential of the end of the sleeve is still high, and there is dirt on the surface of the sleeve. After damp, it is easy to cause flashover explosion. . Similar to the following: China Patent No. 93240259.3 new wall bushing; China Application No. 03100143.2 dry high voltage capacitor core and its manufacturing method; China Application No. 200510035075.4 new insulated copper tube bus.

3. Another manufacturing method of the cable head has the defects: the screen is grounded from the first screen to the ground screen, and only the point and the point are partially released from the end of the cable head. Actually, only the last screen and the ground screen directly sense the ground, but the cable head The end potential is also very high, there is dirt on the surface of the cable head, after the damp, it is easy to cause flashover explosion, similar to the following: Chinese patent No. 98218242.2, a new high-voltage cable terminal; China Patent No. 99248192.9, a short dry cable terminal; China Patent No. 00264710.9 dry cable terminal.

4, the existing current transformer primary winding capacitive main insulation core its defects: from one screen to the end screen to the grounding screen inductive grounding, only point and point partial release of the end of the transformer electric field, the actual only the last screen and the grounding screen directly inductive grounding However, the end of the transformer is also very high, there is dirt on the surface of the transformer, after the damp, it is easy to cause flashover explosion, similar to the following: China Application No. 03100143.2 dry high voltage capacitor core and its manufacturing method.

5, the existing high-voltage end of its defects: from the first screen to the end screen to the grounding screen inductive grounding, only point and point local release high voltage end electric field, the actual only the last screen and the grounding screen directly inductive ground, but the end potential is still very High, there is dirt on the surface of the high voltage end, after the damp, it is easy to cause flashover explosion, similar to the following: China Patent No. 201010116122.9 high voltage end.

The object of the present invention is to overcome the shortcomings of the prior art and propose a high voltage device. The end processing method can effectively reduce the electric field at the end of the high voltage device, and the end of the high voltage device does not flash.

A technical solution for achieving the object of the present invention: a high voltage device end processing method of the present invention, a high voltage device: a conductor is made of a circular conductor (using copper or aluminum according to a current carrying current, a cross-sectional area) to make a main insulation on the conductor (conductor surface Leveling can be done without conductor masking, and the insulating material is made of plastics, such as ethylene, resin, silicone rubber, rubber, EPDM, and one to ten thousand screens are placed on the main insulation of the conductors that have been insulated at the beginning. From the last screen to the grounding screen (the grounding screen only has a grounding screen), there is insulation isolation between each screen. From one to ten thousand screens to the last screen, the grounding screen is inductively grounded, so that the electric field at the end of the high voltage device is very low.

The invention has the beneficial effects that the high voltage device end processing method of the invention has the multi-screen multi-point and grounding screen inductively releasing the end electric field at the end of the 6kV to 1000kV high voltage device, and the one to ten thousand screen to the last screen simultaneously and grounded. The screen is inductively grounded, so that the electric field at the end of the high-voltage device is very low. There is dirt on the surface of the end of the high-voltage device. After the damp, it does not flash and does not explode, and the high-voltage device realizes maintenance-free operation.

1‧‧‧conductor

2‧‧‧Main insulation

3‧‧‧One screen

4‧‧‧Two screens

5‧‧‧End screen

6‧‧‧ Grounding screen

7‧‧‧Direct sensing area

8‧‧‧Screen insulation

Fig. 1 (high voltage device end) and Fig. 2 (high voltage device end) are schematic views of the structure of the present invention.

The specific embodiments of the present invention are further described below in conjunction with the accompanying drawings.

As shown in Fig. 1, the high voltage device end processing method of the present invention, such as the fabrication of a 110kV/1250A through-wall bushing: the conductor (1) is made of a copper rod having a diameter of ø30 mm and a length of 2500 mm.

1 Reserve 120mm for the terminals at both ends of the conductor.

2 The main insulation (2) is made on the middle length of the conductor (1) at 2260mm, and the insulation thickness is 18mm (the conductor surface is flat and can be processed without conductor mask, and the insulating material is made of plastic, such as ethylene, resin, EPDM). Main insulation technology (such as pouring, wrapping, extrusion).

3 Make a screen (3) at both ends of the main insulation (2), a screen (3) and an insulated end distance of 50mm, a screen (3) length of 300mm, thickness of 1mm, screen material (such as copper, aluminum, Semi-conductive material), an insulation (8) is applied to one screen (3), and a screen (3) is covered from the end of the main insulation (2) by a length of 400 mm and a thickness of 2 mm. The manufacturing method and material are the same as above.

4 Make two screens (4) on one screen (3) that has been insulated, two screens (4) and insulation end distance 70mm, two screens (4) length 250mm, thickness 1mm, screen materials (such as copper, aluminum , semi-conductive material), add insulation (8) on the second screen (4), cover the second screen (4) from the end of the main insulation (2), the length is 300mm, the thickness is 2mm, and the manufacturing method and material are the same as above.

5 Make the last screen (5) on the already insulated two screens (4), the final screen (5) is 90mm away from the insulated end, the end screen (5) is 200mm long, and the thickness is 1mm. The material of the screen (such as copper and aluminum) , semi-conductive material), add insulation (8) on the last screen (5), cover the end screen (5) from the end of the main insulation (2) length 250mm, thickness 2mm, the production method and material as above.

6 Make a grounding screen (6) on the end screen (5) of the insulated ends, the distance between the grounding screen (6) and the insulating end is 110mm, and the length of the grounding screen (6) is 2040mm to cover the last screen (5) at both ends, thickness 1mm , the material of the screen (such as copper, aluminum, semi-conductive materials).

7 Add insulation (8) to the grounding screen (6) (cover 2620mm from the two ends of the main insulation (2), the thickness is 2mm, the production method and material are the same as above).

8 There is a direct sensing area (7) between the grounding screen (6) and the last screen (5), a direct sensing area (7) between the second screen (4) and the grounding screen (6), a screen (3) and a grounding screen (6) There is a direct sensing area (7), one screen (3), two screens (4), the last screen (5) and the grounding screen (6) at the same time induction grounding, let 110kV/1250A wall bushing (high voltage electric device) The end field is very low.

As shown in FIG. 2, the high voltage device end processing method of the present invention: the basic method is the same as above, but there are only two direct sensing areas, and there is a direct sensing area (7) between the grounding screen (6) and the last screen (5). There is a direct sensing area (7) between one screen (3) and the grounding screen (6). One screen (3), the last screen (5) and the grounding screen (6) are simultaneously inductively grounded, so that the 110kV/1250A wall bushing is High piezoelectric devices) The end electric field is very low.

According to the above method, high-voltage devices such as high-voltage 6kV to 1000kV circuit breaker bushings, combined electrical bushings, transformer bushings, current transformer bushings, U-shaped bushings, cable terminal joints, cable intermediate heads, and bus bars can be fabricated.

The conductor length of the above-mentioned high-voltage electric device is set according to the voltage level, the cross-sectional area of the conductor is set according to the current carrying capacity, and the insulation thickness is set according to the voltage level. The number of screens and the length of the screen are set according to the voltage level, but the number of screens is not Less than three, the distance between the screen and the end is set according to the voltage level. The direct sensing area (7) is not less than two.

The high-voltage device end processing method produces a high-voltage device whose conductor is a circular conductor (tubular, rod-shaped, stranded); the insulation treatment can be cold shrinking, heat shrinking, casting, wrapping, etc.; the insulating material is made of resin Class, polyethylene, polyvinyl chloride, polypropylene, plastic, rubber, EPDM rubber, silicone rubber, insulating paper, insulating cloth, insulating oil, insulating paint, porcelain casing, etc.; Conductive resin, polyethylene, polyvinyl chloride, polypropylene, plastic, rubber, silicone rubber Or copper, aluminum, stainless steel, etc.

The high voltage device end processing method of the invention, the end of the 6kV to 1000kV high voltage device adopts a multi-screen multi-point and grounding screen to sense and release the end electric field, and the first to the 10,000 screen to the last screen simultaneously inductively ground with the grounding screen to make the high voltage The electric field at the end of the device is very low, and there is dirt on the surface of the end of the high-voltage device. After the damp, it does not flash and does not explode, and the high-voltage device realizes maintenance-free operation.

1‧‧‧conductor

2‧‧‧Main insulation

3‧‧‧One screen

4‧‧‧Two screens

5‧‧‧End screen

6‧‧‧ Grounding screen

7‧‧‧Direct sensing area

8‧‧‧Screen insulation

Claims (3)

A high voltage device end processing method is provided for setting a first screen (3), a second screen (4) to a first screen, a last screen (5), and a grounding screen (6) in an end portion of the high voltage device, wherein The first screen (3) and the last screen (5) are respectively grounded to the ground screen. The high voltage device end processing method according to claim 1, wherein at least one of the second screen (4) to the first screen is inductively grounded with the ground screen to make the high voltage device end There are at least three direct sensing areas (7) in the department. A method for manufacturing a 6 kV to 1000 kV high voltage device, comprising the high voltage device end processing method according to claim 1, wherein the high voltage device is a circuit breaker bushing, a combined electrical bushing, a transformer bushing , current transformer bushings, U-shaped bushings, cable terminations, cable intermediates or busbars.