TWI590315B - The structure of the electrode, the constituent material and the manufacturing method thereof - Google Patents

Description

Electrode structure, constituent material and manufacturing method thereof

The present invention relates to a through or embedded electrode (hereinafter referred to as "through electrode" or "embedded electrode", respectively referred to as a "through electrode" or "embedded electrode"), which is applied to a three-dimensional layer of a semiconductor wafer.

In other words, the present invention relates to a through/embedded electrode (hereinafter, a structure including a substrate and a through/embedded electrode, collectively referred to as an "electrode structure") formed in an opening of a substrate, and the electrode is formed. Materials and methods of manufacture thereof.

As a method of forming the through electrodes inside the openings on the substrate required for the three-dimensional layering technique of the semiconductor wafer, there are three main types, but each has the following disadvantages, and thus there are still problems in practical use.

The first method is a representative example of the liquid deposition method, "conformal copper plating method". The method uses an electroless plating solution to form a dense copper plating layer on the inner wall of the electrode hole. At this time, the plating layer covers only the entire inner wall of the opening, and the inside of the opening is not completely filled. Although it is a technique for mass production, a recess is formed in the end surface penetrating the electrode side, so in the wiring alignment step, a wiring pattern larger than the diameter of the through electrode is used. Therefore, it is difficult to perform high-density wiring by the through electrode formed by this method.

The second method is the copper metal filling method. As a typical example of vapor phase growth, this method requires not only an expensive ion plating apparatus or a metal CVD apparatus but also a long processing time, and as a result, the manufacturing cost is increased. Furthermore, the entire through-electrode is a densely dense copper, so the through electrode The modulus of elasticity is large, and compared with a semiconductor substrate (for example, a germanium wafer), since the difference in thermal expansion coefficient is large, excessive internal stress is generated due to thermal shock such as temperature cycle of the processing step. As a result, there is a possibility that the semiconductor substrate is cracked.

The third method is a conductive metal paste filling method. In this method, since a monomer is used as a diluent for the metal paste, the organic residue after drying is large, and the electric resistance of the through electrode is large. This effect not only limits the circuit design, but also causes instability in electrical characteristics.

There have been a number of improvements in the above three methods. There are many improvements in the above filling method.

For example, Patent Document 1 proposes a method of depositing a suspension of metal particles in an opening by a pressure and a filter. 4 is a diagram 1 of Patent Document 1. In the same figure, the substrate 101 having the through holes 102 is disposed on the upper portion of the screen 140. A suspension of 130 series metal particles. The suspension of the metal fine particles 130 is pushed into the through hole 102 by the push of the piston 120 to be deposited. After the substrate 101 is taken out and dried, the conductive paste is filled again inside the through hole 102 and cured, and a through electrode is formed. This method improves the conductivity of the through electrode by increasing the metal ratio of the through electrode by secondary deposition of the metal component.

Patent Document 2 proposes a method in which a metal paste is applied while vibrating using a doctor blade, and a negative pressure is applied to the opposite side of the wafer substrate to deposit a metal paste on the opening, followed by sintering. Fig. 5 is a diagram 1 of Patent Document 2. This method ensures the conductivity of the through electrode by increasing the packing density of the metal paste.

Patent Document 3 proposes a method of applying heat and high-speed vibration in a vacuum environment after applying a small amount of metal paste to cause a molten metal to flow and deposit it.

The methods of Documents 1 to 3 achieve their respective goals, but if the processing steps are taken into account for the damage caused by the existing circuit pattern, the loading and unloading of the auxiliary material (supporting the glass substrate, etc.), semi-conducting The overall steps of the assembly of the body device can be practically cumbersome.

[Previous Technical Literature] [Patent Document]

Patent Document 1: Japanese Patent Publication No. 2011-054907

Patent Document 2: JP-A-2011-071153

Patent Document 3: Japanese Laid-Open Patent Publication No. 2009-277927

For the through-electrode, the biggest problem in achieving product performance and quality assurance is as follows: in the temperature-changing cycle of the processing step, the crack due to the difference in thermal expansion coefficient between the materials causes the reliability to decrease; The signal transmission characteristics are degraded due to the conductivity of the electrode constituent material.

In addition, with the miniaturization of semiconductor manufacturing technology, higher density configurations should also be considered. Therefore, even if the size of the through electrode is reduced, the same signal transmission characteristics and reliability as before reduction are required.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a low-impedance and high-reliability through/insertion electrode which can be disposed at a higher density in accordance with the miniaturization of a semiconductor manufacturing technique, and a method of manufacturing the same.

Other objects of the invention, which are not explicitly described herein, will be apparent from the following description and drawings.

In order to achieve the above object, the present invention focuses on the fact that the elastic modulus and strength of the porous body are inversely proportional to the opening ratio, and the mechanical properties of the (impregnated) non-completely substituted solid solution of the porous body are substantially the same as those of the porous body. Also, it is considered that the passing current of the through/embedded electrodes is a high frequency current.

The through/embedded electrode of the present invention includes a conductive first body (a porous sintered body) formed by sintering a first conductive material, and a different one from the first conductive material. The second conductive material is filled and solidified in the second conductor of the first conductive body.

Since the through/embedded electrode of the present invention has the above-described configuration, it is possible to obtain a low-impedance and high-reliability through-electrode or embedded electrode which can be disposed at a higher density in accordance with the miniaturization of the semiconductor manufacturing technique.

In a preferred embodiment of the through/insertion electrode of the present invention, the first conductor including the second conductor filled in the void portion is a non-completely substituted solid solution.

The method for manufacturing a through/embedded electrode of the present invention is a method for forming a through/embedded electrode in an opening in a substrate, characterized in that the method comprises the steps of: sintering a first conductive material in a paste form, a step of forming a porous first conductor; and a step of filling and solidifying the second conductive material different from the first conductive material in the gap of the first conductor to form a second conductor, and filling the gap The first conductor of the second conductor constitutes a through/embedded electrode.

Since the method for manufacturing the through/insertion electrode of the present invention includes the above steps, it is possible to form a low-impedance and high-reliability through-electrode or in-line which can be disposed at a higher density in accordance with the miniaturization of the semiconductor manufacturing technology at a low cost. electrode.

The step of sintering the first conductive material is preferably a low melting point sintering treatment.

The above-mentioned "substrate" may be a plate having an opening through which the through/embedded electrode can be disposed. E.g A wafer that has accumulated a large number of components; or a plain board that is electrically connected as a component; or a board that has a wiring pattern. The material of the "substrate" may be any, and may be, for example, a germanium, a compound semiconductor, a resin, a ceramic, a glass, or the like.

The above-mentioned "through/embedded electrode" has the following three forms: as shown in FIG. 1B(k), in order to electrically connect the elements or the electric wiring patterns formed on both surfaces of the substrate to each other, the substrate penetrates the substrate in the thickness direction thereof. It is exposed from both sides of the substrate in the form of a connection terminal (through electrode); and as shown in FIG. 2B(k), it is exposed on one side of the substrate in the form of a terminal, and is connected to the internal wiring on the other side of the substrate (embedded electrode) And as shown in FIGS. 3(B), (c), and (d), one side of the substrate is exposed in the form of a connection terminal, and the other side of the substrate is connected to a plurality of internal wirings (embedded electrodes).

The above-mentioned "opening" extends from one main surface (for example, the first main surface) of the substrate toward the other main surface (for example, the second main surface) of the substrate, and a hole penetrating the electrode is buried therein. There are two cases of penetrating the substrate and not penetrating the substrate. The cross section of the opening is mostly circular, but is not limited thereto. For the purpose of electrical connection, the inner wall of the "opening" must be insulating. When the material of the substrate is electrically conductive (for example, 矽), since the inner wall of the "opening" is also electrically conductive, it is necessary to construct an insulating layer on the inner wall.

The above-mentioned "paste" refers to a viscous suspension which is obtained by dispersing conductive fine particles as a solid component in a dispersion (solvent). It is preferred that the organic solvent is not generated after volatilization (gasification) of the dispersion (solvent) used. It may also contain a reducing agent such as formic acid, a COOH acid of a carboxylic acid, or a rosin wax (rosin) to maintain the activity of the surface of the conductive fine particles.

As the dispersion (solvent), a polyol such as ethylene glycol, butanol or an alcohol ester can be preferably used; or terpineol, rosin oil, tetracaine alcohol acetate, tetracaine alcohol, and carbene Alcohol, tetrachloroethylene, etc. These dispersions (solvents) have the following advantages: low aggression to the resist, and easy to dry after coating because they volatilize at a lower temperature (less than 50 ° C). In the dispersion (solvent) Among them, the polyol is particularly preferred because it can be dried at room temperature to about 100 ° C.

The "first conductive material" is a fine particle formed by coating a conductive film on a core composed of a metal, an alloy, a metal compound, or a semiconductor fine particle or an organic or inorganic material, or the like. Both constitute. Its particle size is about 0.3 to 10 μm. For example, even if the actual particle diameter is 0.1 μm or less, it is agglomerated by static electricity or the like, and is usually about 0.3 to 10 μm.

It can be suitably used as a material of the first conductive material, for example, the following, but the present invention is not limited thereto.

As the metal, there are tungsten, molybdenum, chromium, indium, tin, gold, silver, and the like.

As the metal compound, there is a compound containing the above metal (tungsten or the like) as a constituent component. Since there are many kinds of constituents and they are not "compounds", they can also be called "mixtures".

As the semiconductor, there are ruthenium, osmium, compound semiconductor, ruthenium carbide, carbon, and the like.

As a fine particle formed by coating a conductive film on a core made of an organic material, a metal film such as indium, gold, silver, platinum, or tin is plated on the surface of a core made of a resin material or the like. (Skin) conductive particles.

As a fine particle formed by coating a conductive film on a core made of an inorganic material, any conductive film is coated on a metal such as a metal or a germanium or a germanium by plating or the like; Carbonized material; carbon-based material; diamond-like substance; tantalum nitride; aluminum nitride; borosilicate glass; boron nitride ceramics and other core conductive particles.

As the conductive film, indium, indium alloy, nickel-gold, gold, silver, copper, platinum, tin, zinc, antimony, gallium, cadmium, titanium, antimony or the like can be suitably used.

When the first conductive material contains conductive fine particles formed by coating a conductive film on a core made of an inorganic material, the conductive fine particles preferably have a core. The tungsten or the conductive film is at least one of indium, tin, copper, and a noble metal (gold, silver, platinum, or the like).

In the case where the conductive film is coated on the conductive particles formed by the core, in order to increase the peeling strength between the core and the conductive film, it is possible to be in the core. The surface may be provided with any one of a metal such as copper, nickel, titanium or tantalum (the metal having barrier properties) or an intermediate coating layer composed of at least two of the above, and may be coated with conductivity thereon. Skin. Further, by the intermediate coating layer, the resistance of the core or the like can be lowered to improve electrical characteristics.

As a benchmark for selecting the first conductive material, the following three points must be considered:

(1) In order to ensure good reliability, the difference in thermal expansion coefficient between the first conductive material and the substrate is small, and the thermal expansion coefficient of the porous sintered body and the substrate is preferably not more than three times. In order to ensure that the semiconductor element substrate including the first conductive material is exposed to a high temperature environment, the substrate is not damaged by internal stress caused by a difference in thermal expansion coefficient of the substrate.

(2) In order to ensure good signal transmission characteristics, the first conductive material is preferably a small resistor.

(3) The sintering (diffusion bonding) temperature is set to 300 ° C or lower. Considering that most of the substrate on which the through/insertion electrode is formed is a germanium wafer in which a large number of components are accumulated, the sintering (diffusion bonding) temperature must be lower than that of the integrated circuit manufacturing in order not to damage the peripheral component circuit. The highest temperature in the process.

The "second conductive material" is composed of at least one of a low melting point metal, an alloy, and a semiconductor. The material of the second conductive material must be different from the first conductive material. The particle diameter of the second conductive material is preferably smaller than the particle diameter of the first conductive material. The melting point of the second conductive material is preferably not more than the sintering temperature of the first conductive material or the melting temperature of the sintered alloy portion (sintered body).

Preferred examples of the second conductive material include low indium alloys, tin alloys (tin silver, gold tin, etc.), bismuth alloys (such as tin and antimony), gallium alloys, zinc alloys, and solders. An alloy of a melting point metal or an indium, tin, gallium, antimony or the like of a low melting point metal having an alloy ratio of 0%. Table 1 shows typical blending examples, but the invention is not limited by such blending examples.

As a method of applying the above-mentioned paste, a known method can be used, and the description thereof will be omitted. However, care should be taken to increase the filling speed of the paste or to prevent the generation of pores.

The above-mentioned "low-temperature sintering treatment" is usually a low-temperature heat treatment which does not exceed 300 °C. The liquid component of the paste is vaporized by heating, and is a reducing gas atmosphere such as a hydrogen-nitrogen mixed gas or a formic acid or a carboxylic acid such as a "COOH-based acid" or a rosin wax (rosin). The reducing agent is diffusion-bonded to the periphery of the portion (contact portion) where the solid components of the activated paste, that is, the particles are partially in contact with each other, so that the porous first conductor is formed (sintered).

At this time, the temperature of diffusion bonding is much lower than the melting point temperature of the solid component of the paste, that is, the fine particles (or the conductive skin of the fine particles).

If a different metal is appropriately combined to form a solid component of the paste, that is, a fine particle (or a conductive skin of the fine particle), the melting temperature of the alloy formed by diffusion bonding can be made much higher than the sintering temperature. This is a very advantageous phenomenon in the processing of subsequent steps.

The size of the voids in the porous sintered body and the occupation ratio of the voids depend on the size or shape of the fine particles as a solid component. The through electrode or the embedded electrode can be obtained by impregnating the second conductive material in the void and curing.

As a method of the above-mentioned "impregnation", for example, a method in which a paste containing a second conductive material is applied onto a substrate, permeated on a porous first conductor, and then a second conductive material is melted by heat treatment. In this way, since the second conductive material is deposited and resolidified in the gap of the first conductor, the above-mentioned "second conductor" can be obtained.

When the melting point of the second conductive material is low, the second conductive material may be melted by a coating machine, and coated and infiltrated on the preheated substrate in a vacuum environment, a reducing environment, or an inert gas atmosphere. After the porous first conductor is cooled, the second conductor is obtained by cooling.

In the through/embedded electrode of the present invention, it is preferable that the component volume ratio of the first conductor is larger than the component volume ratio of the second conductor. This is to maintain the mechanical properties of the first conductor as the mechanical properties of the through/embedded electrodes.

In the step of forming the through/embedded electrode of the present invention, the electrical connection with the element or the wiring pattern formed on the substrate varies depending on the material of the substrate and the complexity of the arrangement of the element or the wiring pattern, but it is known Therefore, the description is omitted here.

The complicated external factors are omitted, and the steps of forming the basic through/embedded electrodes are roughly as follows (1) to (7):

(1) A step of opening from one side (first main surface) of the substrate.

(2) A step of forming an insulating layer on the inner wall of the opening.

(3) A step of applying a paste having a solid content of the first conductive material to the opening, and depositing and filling.

(4) Low temperature sintering treatment step.

(5) A step of applying a solid component as a paste of the second conductive material (or a melt of the second conductive material) to the porous first conductor.

(6) A step of melting and impregnating the second conductive material.

(7) A step of smoothing the first main surface or the second main surface of the substrate or both the first main surface and the second main surface.

In the seven steps, when the substrate is a resin or a ceramic, the above step (2) may be omitted.

In order to obtain the required amount of solid content, it is necessary to repeat the above step (3) several times. Further, in order to promote the deposition of the solid component, the substrate may be preheated.

In the above step (4), the treatment temperature can be set in accordance with the composition of the first conductive material. In some cases, it may be carried out in a reducing environment such as a hydrogen-nitrogen mixed gas or an inert gas atmosphere such as nitrogen or argon.

Similarly to the above step (3), the above step (5) may be repeated several times. When the coating is a molten metal, it is expected that a vacuum environment or a mixed environment having a weak reducing property is required.

In the above step (6), a vacuum environment is usually required, but when the coating is a metal melt, there is a case where it is not necessary.

The above step (7) is a step of forming a concave due to the exposed end of the through/insertion electrode. Since it is convex, the step of flattening the surface of the substrate which is not flat is performed for the subsequent steps.

Finally, the basic concept of the through/insertion electrode of the present invention and its formation method will be explained.

If the thermal shock caused by the penetration/embedded electrodes in the temperature change cycle is investigated, it is considered that the thermal shock is caused by the pressure variation applied to the inner wall of the opening of the substrate due to the volume change of the penetrating/embedded electrodes. Theoretically, if the through/embedded electrode is formed of a material having the same thermal expansion coefficient as the substrate, stress does not occur.

In the environment in which the through/embedded electrodes are used, since the current passing through/inserted electrodes is mainly a high-frequency current, the skin effect is a factor that cannot be ignored when the on-impedance of the through/embedded electrodes is reduced.

Further, for example, a fine particle having a thermal expansion coefficient close to the substrate is used as a core, and a low-resistance conductive film is coated on the surface to form conductive particles (first conductive material). When the conductive particles are deposited and sintered, a porous conductor (porous sintered body) (first conductor) having a continuous void portion can be obtained. At this time, since the contact portions of the conductive films of the conductive fine particles are connected to each other, a three-dimensional mesh-shaped conduction path is formed. In the porous conductor (porous sintered body), the line connecting the surfaces of the contact portions is longer than the peripheral line of the column of the same diameter in any cross section, so that a wider conductive surface area can be obtained.

Moreover, in order to connect the broken portion of the above-mentioned wiring, the molten material of the second conductive material is impregnated into the void portion of the porous conductor (porous sintered body) to be re-solidified, so that a better conduction path can be secured.

As a result, a through/embedded electrode having a thermal expansion coefficient close to the substrate and having conductivity at a high frequency close to the conductivity of the metal body having the same diameter is obtained.

When the core is a metal or an alloy, the through/embedded electrode can be regarded as Since the constituent components are distributed unevenly in the metal body, high electric conductivity can be ensured even if the current passing through/embedded electrodes is low frequency or direct current.

The method of forming the through/insertion electrode of the present invention has the advantage of being able to effectively suppress the manufacturing cost since no expensive equipment is required.

The through/embedded electrode of the present invention has an effect of providing a low-impedance and high-reliability through-electrode or embedded electrode which can be disposed at a higher density in accordance with the miniaturization of the semiconductor manufacturing technique.

The method for forming a through/insertion electrode according to the present invention has the effect of forming a low-impedance and high-reliability through-electrode or inner portion which can be disposed at a higher density in accordance with the miniaturization of the semiconductor manufacturing technology at a low cost. Embedded electrode.

50, 250‧‧‧ substrate

51‧‧‧through holes or embedded electrode openings

52, 252‧‧‧1 main face

53, 253‧‧‧2nd main face

54, 74, 254‧‧ ‧ insulation

55‧‧‧Support board

56, 59, 256, 259‧ ‧ ‧ cream

57, 257‧‧‧1st conductor (porous sintered body)

60, 260‧‧‧2nd conductor (non-completely substituted solid solution)

61, 261‧‧‧ melt (metal or alloy)

58, 258, 358, 458, 558, 658‧‧‧ conductive particles

65, 66, 73, 73a, 73b, 73c, 265‧‧‧ wiring layers

70‧‧‧Optoelectronics

71‧‧‧Diffusion layer

72‧‧‧ gate

251, 251b, 251c, 251bc‧‧‧ openings

270‧‧‧Interlayer wiring

861‧‧‧ mesh, part of the Au-Sn alloy joint

878‧‧‧When the W particles impregnated with Cu are used as nuclei, the surface of the Sn is covered with metal particles of the Sn film.

978‧‧‧When the W and Mo particles impregnated with Ag or Cu are used as nuclei, the surface of the Au film is covered with metal particles of Au film.

Fig. 1A is a view showing a step of forming a through electrode according to a first embodiment of the present invention.

Fig. 1B is a view showing a step of forming a through electrode according to a first embodiment of the present invention.

Fig. 2A is a view showing a step of forming an embedded electrode in a second embodiment of the present invention.

Fig. 2B is a view showing a step of forming an in-embedded electrode according to a second embodiment of the present invention.

Fig. 3 is a view showing a step of forming an embedded electrode in a third embodiment of the present invention.

Fig. 4 is a view showing an example of a conventional method of forming a through electrode.

Fig. 5 is a view showing another example of a conventional method of forming a through electrode.

Fig. 6 is an explanatory view showing various bonding structures (joining aspects) of conductive fine particles and conductive fine particles used in the method of forming a through/insertion electrode according to the fourth embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. However, the present invention can be embodied in a variety of different forms, and its form, detailed construction, and material selection can be changed without departing from the principles and scope of the invention, and should be readily understood by the same.

Therefore, the present invention is not limited by the description of the embodiments. In the following description, the same portions or portions having the same functions are denoted by the same reference numerals, and the description thereof will be omitted.

(First embodiment)

1A and 1B show a method of manufacturing a through electrode according to a first embodiment of the present invention. In the present embodiment, when both ends of the electrode are exposed from both sides of the substrate to serve as a terminal, the electrode serves as a through electrode. The substrate in which the through electrode is built functions as an interposer.

First, as shown in FIG. 1A(a), the substrate 50 is prepared.

Next, as shown in FIG. 1A(b), an opening 51 is formed in the substrate 50. The opening 51 penetrates from the first main surface 52 (the upper surface in the drawing) of the substrate 50 to the second main surface 53 (the lower surface in the drawing). The inner diameter of the opening 51 is from several μm to several hundreds μm.

Next, as shown in FIG. 1A(c), an insulating layer 54 is formed on the inner wall of the opening 51. As shown in the figure, the insulating layer 54 is formed not only on the inner wall of the opening 51 but also on the first main surface 52 and the second main surface 53 by the forming method. However, if the material of the substrate 50 is insulating, it is not necessary to form the insulating layer 54.

The material of the substrate 50 can be variously selected, and a semiconductor substrate such as tantalum or niobium, a compound semiconductor substrate or the like can be preferably used; and a glass or ceramic substrate having a thermal expansion coefficient of the same level as that of the semiconductor substrate in which the semiconductor device is mounted.

Next, as shown in FIG. 1A(d), a support plate 55 made of glass or the like is attached to the second main surface 53 of the substrate 50. When the insulating layer 54 is present on the second main surface 53, the support plate 55 is attached to the second main surface 53 via the insulating layer 54. The support plate 55 has a function of blocking the bottom of the opening 51 (the opening on the second main surface 53 side).

Next, as shown in FIG. 1A(e), the paste containing the first conductive material is filled and deposited in the opening 51 from the opening on the first main surface 52 side. At this time, one portion of the paste 56 overflows from the opening 51.

As an example of the paste 56 containing the first conductive material, for example, the following two types of tungsten fine particles (conductive material fine particles) are added to a dispersion liquid and a volatile solvent at a ratio of 1 to 1 and blended. 85w% of the viscous turbid liquid, the tungsten particles are a tin film having a thickness of about 1/1/1 of a core size (in the case of the present embodiment, 0.0015 μm to 0.05) Thickness of μm) The particle size or appearance of the coated tungsten particles (conductive material particles) having a size of about 0.3 μm to 0.5 μm, and also, for example, 1/10 to 10 of the size of the core. A silver particle (conductive material fine particle) having a particle size or an outer shape of a silver film having a thickness of about 1 (this embodiment is a thickness of 0.0015 μm to 0.05 μm) and having a size of about 0.3 μm to 0.5 μm. The viscous turbid liquid contains conductive fine particles composed of a tungsten core coated with a tin coating and conductive fine particles composed of a tungsten core coated with a silver coating, and thus the core ( The core) is composed of the same metal, and the skin is composed of a different metal and contains two kinds of conductive particles. Of course, the materials constituting the paste 56 and the contents, solvents, and the like are not limited by the contents disclosed herein.

The thickness of the film (here, the tin and silver film coated by plating or substitution) must be equal to or less than the following thickness: film bonding different from the volume ratio of the core (here, tungsten particles) The molten portion of the dot does not fill the void portion created by the core. The gap is in the next processing step The section needs to be filled with other molten metal, so it must be continuous even if a part is fixed. Further, when the void portion is not sufficiently filled with the molten metal to cause internal voids, the impedance component increases, and the conductivity of the through electrode is lowered.

Further, when the degree of decrease in conductivity of the through electrode due to incomplete filling of the void portion is small, the purpose of use of the through electrode is not affected. At this time, the above conditions for the thickness of the skin may not be required. In addition, when the conductivity of the penetrating electrode can be adjusted to a desired level or higher without filling the gap portion, the process itself of filling the cavity portion with the paste 59 as described below can be omitted.

The filling of the paste 56 can be carried out by a known method such as micropipette or screen printing. The properties of the coating machine, the coating speed, the bulk density, and the like can be considered, and the particle diameter and the solid content ratio (diluent ratio) of the conductive fine particles in the paste 56 can be easily adjusted. A mechanical, preferably relatively low-cost jet despenser is used. The number of times of repeated coating varies depending on the performance of the selected model. In general, it takes about 2 repetitions.

Next, as shown in FIG. 1A(f), a porous first conductor 57 is formed in the opening 51 by low-temperature sintering treatment in a reducing atmosphere. The volatile particles contained in the volatile paste 56 by the low-temperature sintering treatment in the reducing atmosphere, and the conductive fine particles of the solid components contained in the paste 56 are contracted and deposited in contact with each other. Then, a metal film (in this example, a tin and a silver film) which is formed on the surface of the activated conductive fine particles is mutually diffusion-bonded and sintered to form a porous first conductor 57. The degree of deposition shrinkage at this time varies depending on the content of the solid content in the paste 56.

In the example of the paste 56, the core of the two types of conductive particles contained in the paste 56 is tungsten, and the skin of the conductive particles is silver and tin, so that the first conductor 57 as a sintered body is used. The main constituent elements are tungsten particles, and the film-like tin and silver disposed around each tungsten particle. They are combined to form a conductive path.

The conditions for low-temperature sintering in the present embodiment are, for example, in an N ₂ atmosphere containing 2% of H ₂ as a reducing agent, and the temperature is 230 °C. Of course, it is not limited to these conditions.

(B) of FIG. 1B is an explanatory view showing a partial contact state of the conductive fine particles 58 constituting the solid component of the porous first conductor 57. The partial contact of the conductive fine particles 58 of the solid component is generated in the continuous void portion between the conductive fine particles 58.

Next, as shown in FIG. 1B(h), the paste 59 containing the second conductive material is applied and deposited so as to cover the porous first conductor 57. Thereafter, the paste 59 is temporarily melted by a low-temperature heat treatment, and then deposited and resolidified. Thus, the incompletely substituted solid solution 60 constituting the through electrode is formed inside the opening 51. At this time, the partial melt (second conductive material) 61 which is one of the pastes 59 of the second conductor penetrates into the void portion of the porous first conductor 57 (see FIG. 1B (g)), and the void portion is completely filled (see Figure 1B(i)). The non-completely substituted solid solution 60 thus formed constitutes the through electrode of the present embodiment.

As an example of the paste 59, a paste of an indium-based alloy (for example, indium 52%, tin 48%, and a melting point of about 120 ° C) is preferable, and the conductive fine particles of the indium-based alloy contained therein are set to have a particle diameter of 0.03 μm to 0.05. In μm, the solid content (conductive fine particles) is set to 80 to 99 w%. If this ratio is blended, aggregation of the conductive fine particles of the indium alloy can be prevented, and the filler can be sufficiently supplied.

The melt (second conductive material, indium alloy) 61 of the paste 59 impregnated in the void portion of the porous first conductor 57 is diffusion-bonded to the contact surface with the conductive fine particles 58 of the first conductor 57 (so-called The process of forming the incompletely substituted solid solution 60 while solidifying while the metals are wetted with each other is conceptually shown in Fig. 1B(i).

Next, as shown in FIG. 1B(j), the non-completely substituted solid solution constituting the through electrode is removed. The convex portion generated during the formation of 60 planarizes the first main surface 52 side of the substrate 50. This planarization step can be carried out by a known method such as mechanical polishing or CMP (and a planarization step of chemical reaction and mechanical polishing).

Finally, as shown in FIG. 1B(k), after the support plate 55 is removed from the second main surface 53 of the substrate 50, it is in contact with one end portion of the incompletely substituted solid solution 60 constituting the through electrode. The electric wiring layer 66 is formed on the main surface 53 side, and the electric wiring layer 65 is formed on the first main surface 52 side so as to be in contact with the other end portion of the non-completely substituted solid solution 60.

By the above steps, the opening 51 formed in the substrate 50 is formed with a through electrode formed of the incompletely substituted solid solution 60 (through electrode structure), and the electric wiring layers 65 and 66 electrically connected to the through electrode. .

As described above, in the present embodiment, the method of forming the through/insertion electrode does not require expensive equipment as compared with the conventional through-electrode manufacturing method, and the time is relatively short, and the reliability of the entire substrate is not lowered, and the deterioration of the signal-free transmission characteristic can be formed. A good conductivity through-electrode.

Moreover, since the high-temperature processing step exceeding 230 ° C can be avoided in the formation of the through/embedded electrode, it can be effectively used as a semiconductor device or an organic device, a semiconductor or a glass or ceramic, which cannot be processed at a high temperature. A method of forming a through electrode on a substrate wafer.

As described above, since the high-temperature heat treatment of 300 ° C or higher is not included, the characteristics of the device that has been configured as the silicon wafer are not changed or deteriorated. Further, since the conductivity of the through electrode is large, the size of the through electrode which is difficult to pass a large current or a high-speed signal can be reduced, and high integration or three-dimensional stratification with low manufacturing cost can be achieved.

Further, in order to adjust the conductivity of the through electrode to a desired level or higher, the use of the paste 59 to perform the filling step of the void portion is omitted, and the through electrode is only made of the porous first conductor. 57 (porous sintered body). Here, the same applies to the second to fourth embodiments described below.

(Second embodiment)

2A and 2B show a method of forming an in-line electrode according to a second embodiment of the present invention. In the present embodiment, when the electrode is exposed as a terminal on one side of the substrate and the other side is connected to the wiring of the constructed semiconductor device from the inside of the substrate, the electrode serves as an embedded electrode.

First, as shown in FIG. 2A(a), the transistor 70 can be formed on the second main surface 253 (the lower surface in the drawing) of the substrate 250 such as a semiconductor wafer by a known method. The transistor 70 has a gate 72 and a diffusion layer 71 disposed on one of the two sides of the gate 72. A wiring layer 73 is connected to each of the pair of diffusion layers 71. The gate 72 and the wiring layer 73 are disposed in the insulating layer 74 (mostly an oxide film).

Next, as shown in FIG. 2A(b), the opening 251 is formed by a well-known pattern forming step and a step of further etching the same. Specifically, the substrate 250 is selectively removed from the first main surface 252 (the upper surface in the drawing) side to the insulating layer 74 on the second main surface 253 side by reactive ion etching or the like. The opening 251 penetrates through the substrate 250.

Next, as shown in FIG. 2A(c), the first main surface 252 side of the insulating layer 74 is selectively etched through the opening 251 by reactive ion etching or the like in a fluorine acid (HF) gas atmosphere. The wiring layer 73 directly under the opening 251 is exposed.

Next, as shown in FIG. 2A(d), an insulating layer 254 is formed on the inner wall of the opening 251 and the first main surface 252. At this time, since the insulating layer 254 is also formed on the surface (bottom surface) of the exposed wiring layer 73, it can be removed by a known method. By the formation method, as shown in the figure, the insulating layer 254 is formed not only on the inner wall of the opening 251 but also on the first main surface 252.

By the above steps, an "opening in which a conductor is disposed on the bottom surface" is formed. The subsequent steps, due to The same as the above-described first embodiment, a brief description will be given here.

In other words, as shown in FIG. 2A(e), in the same manner as in the first embodiment, the paste 256 containing the first conductive material is filled and stacked from the opening on the first main surface 252 side. In the opening 251. At this time, one portion of the paste 256 overflows from the opening 251.

Next, as shown in FIG. 2A(f), as in the first embodiment, a porous first conductor 257 is formed in the opening 251. The volatile particles contained in the volatile paste 256 are subjected to a low-temperature sintering treatment in a reducing atmosphere, and the conductive fine particles of the solid components contained in the paste 256 are contracted and deposited in contact with each other. Then, the metal film on the surface of the activated conductive fine particles is mutually diffusion-bonded and sintered to form a porous first conductor 257. The degree of deposition shrinkage at this time varies depending on the content of the solid content in the paste 256.

(B) of FIG. 2B is an explanatory view showing a partial contact state of the conductive fine particles 258 constituting the solid component of the porous first conductor 257. The partial contact of the conductive fine particles 258 of the solid component is generated in the continuous void portion between the conductive fine particles 258.

Then, as shown in FIG. 2B (h), the paste 259 containing the second conductive material is applied and deposited so as to cover the porous first conductor 257, as in the first embodiment. Thereafter, the paste 259 is temporarily melted by a low-temperature heat treatment, and then deposited and resolidified. Thus, the incompletely substituted solid solution 260 constituting the embedded electrode is formed inside the opening 251. At this time, a part of the melt 261 as the second conductor paste 259 penetrates into the void portion of the porous first conductor 257 (see FIG. 2B(g)), and fills the void portion (see FIG. 2B(i)). . The incompletely substituted solid solution 260 thus formed constitutes the embedded electrode of the present embodiment.

The melt 261 of the paste 259 impregnated in the void portion of the porous first conductor 257 is diffusion-bonded to the contact surface with the conductive particles 258 of the first conductor 257 (so-called side occurs) The process by which the metals wet each other to form a non-completely substituted solid solution 260, is conceptually shown in Figure 2B(i).

Next, as shown in FIG. 2B(j), as in the first embodiment, the convex portion generated during the formation of the incompletely substituted solid solution 260 constituting the embedded electrode is removed, and the first portion of the substrate 250 is removed. The main surface 252 side is flattened.

Finally, as shown in FIG. 2B(k), the electric wiring layer 265 is formed on the first main surface 252 side so as to be in contact with one end portion of the incompletely substituted solid solution 260 constituting the embedded electrode.

By the above steps, the structure in which the embedded electrode (the non-completely substituted solid solution 260) is formed in the opening 251 of the substrate 250 (the embedded electrode structure) and the electrical wiring layer 265 electrically connected to the embedded electrode are formed. And 273.

(Third embodiment)

Fig. 3 is a view showing a method of manufacturing an in-line electrode according to a third embodiment of the present invention. This embodiment is a case where the multilayer wiring is used in the second embodiment. Therefore, in FIG. 3, the same components as those of FIG. 2A and FIG. 2B showing the second embodiment described above indicate the same components.

First, as shown in FIG. 3(a), a transistor 70 is formed on the second main surface 253 (the lower surface in the drawing) of the substrate 250 such as a semiconductor wafer by a known method. The transistor 70 has a gate 72 and a diffusion layer 71 disposed on one of the two sides of the gate 72. A plurality of wiring layers 73a, 73b, and 73c are connected to the diffusion layer 71 on one side. The gate 72 and the wiring layers 73a, 73b, and 73c are disposed in the insulating layer 74 (mostly an oxide film). Interlayer wiring 270 is disposed between the wiring layers (in the figure, 73a and 73b), and the adjacent wiring layers (the first layer 73a and the second layer 73b in the drawing) are electrically connected to each other. Such a multilayer wiring layer and interlayer wiring are mostly used for germanium integrated circuits.

Next, as shown in FIG. 3(b), in the same manner as in the second embodiment described above, The opening 251b of the electrode is embedded in the wiring layer 73b of the second layer. Thereafter, as in the second embodiment, an in-line electrode is formed in the opening 251b.

Although the case where the electrode is embedded in the wiring layer 73b of the second layer is shown in Fig. 3, the present invention is not limited thereto, and an electrode in which the wiring layer of the other layer is formed may be used. The opening 251c in the case where the electrode is embedded in the wiring layer 73c of the third layer is shown in Fig. 3(c). In this way, in the multilayer wiring structure, the embedded electrode can be formed for any of the designated wiring layers.

Fig. 3(d) shows an opening 251bc in a case where a common embedded electrode is formed for both the wiring layer 73b of the second layer and the wiring layer 73c of the third layer. When the embedded electrodes are formed in such a configuration, the interlayer wirings of the wiring layers 73b and 73c are formed, and both of them can be exposed on the first main surface 252 side. That is, one of the embedded electrodes can have a plurality of functions.

(Fourth embodiment)

Fig. 6 is a view showing the conductive fine particles used in the method of forming the through/insertion electrode according to the fourth embodiment of the present invention, and various bonding structures (bonding patterns) of the conductive fine particles. Further, the various types of conductive fine particles described below with reference to Fig. 6 can be applied to the porous sintered body 257 or the incompletely substituted solid solution 260 of the second and third embodiments.

Fig. 6 (a) shows a polyhedral conductor particle (polyhedral conductive fine particle) which can be used in place of the conductive fine particles 58 used in the porous sintered body 57 or the incompletely substituted solid solution 60 of the first embodiment. example.

The polyhedral conductor particles (polyhedral conductive particles) 358 exemplified herein are: (i) a rectangular parallelepiped shape, (ii) a cylindrical shape, (iii) a slightly elliptical shape having protrusions on the surface, and (iv) a protrusion on the surface. Slightly spherical, (v) cylindrical, (vii) spherical with fine protrusions on the surface, (viii) slightly elliptical with protrusions on the surface, (ix) spherical, (x) cuboid, (x) Star shape, But it can be shaped other than this. As described above, various shapes can be employed as the shape of the conductive fine particles 58.

The polyhedral conductor particles (polyhedral conductive particles) 358 can be formed by a simple metal or alloy, or a conductor other than a metal/alloy (in this case, only a core exists, no skin exists); It is formed by coating a surface of a core made of an organic material or an inorganic material with a conductive film (for example, a metal film).

Fig. 6(b) shows an example of metal fine particles (conductive fine particles made of metal) 458.

The metal fine particles 458 exemplified herein are formed by using a particle composed of a simple substance of W, Mo, or Si as a core, and coating a surface of the core by a plating method. A conductive film such as Cu, Sn, Au, or Ag.

Here, as the shape of the metal fine particles 458, four types of (i) to (iv) are exemplified.

Fig. 6(c) shows an example of plated metal particles (conductive particles made of metal) 558.

The symbol 658 is a core composed of W, Mo, Si, or the like, and is a core of the plated metal particles 558. Reference numeral 589 denotes a skin (conductive film) disposed on the outermost layer of Au, Ag, or Pt (metal having a relatively high melting point) which is the outermost particle 658 of the core. Reference numeral 689 denotes a film of Ni, Cu, Ti, Cr, or Ta (a metal having a relatively high melting point) disposed inside the film 589 of Au, Ag, or Pt (that is, between the core particles 658 and the film 589). Skin) (conductive film). Reference numeral 789 denotes a film of a Sn elemental material, a Sn-Ag alloy, or a Sn-Ag-Cu alloy (a metal having a relatively low melting point) on the surface of the core particle 658.

Therefore, one of the plated metal particles 558 is composed of a core 658 composed of W, Mo, Si, or the like; and Ni, Cu, Ti, Cr on the surface of the core 658. Or a skin of 689; a skin 589 with Au, Ag, or Pt. In other words, The plated metal particles 558 are provided with two different metal films 589 and 689 having a relatively high melting point around the core 658.

Further, another type of plated metal particles 558 is composed of a core 658 composed of W, Mo, Si, or the like; and a Sn element on the surface of the core 658, Sn-Ag. A skin 789 of an alloy or a Sn-Ag-Cu alloy (a metal having a relatively low melting point). In other words, the plated metal particles 558 are provided with a relatively low melting metal film 789 around the core 658.

Preferably, the two kinds of conductive particles 558 shown in Fig. 6(c) are used in combination (simultaneously). For example, W is selected as the core particles 658, and further, the plated metal particles 558 composed of "the core particles (W) coated with the metal film 589 and 689 having two relatively high melting points on the surface" are referred to as "first conductive particles". The plated metal particles 558 composed of "core particles (W) coated with a metal film 789 having a relatively low melting point on the surface" are referred to as "second conductive particles", and the two kinds of conductive particles are mixed. A paste which can be used as the paste 56 containing the first conductive material can be obtained. By using such two kinds of conductive particles in combination, it is possible to form a porous sintered body (through/embedded electrode) at a low temperature of 300 ° C or lower, and the porous sintered body has "fine particles of W having a sintering temperature of 1100 ° C or more. The sintered body obtained by sintering has similar characteristics of the same grade. This is significant.

Fig. 6(d) shows the size reduction of the plated metal particles (conductive particles made of metal) 558 shown in Fig. 6(c), and 200 ° C in a reducing environment such as hydrogen or nitrogen. An example of the joint portions 589 and 789 composed of a part of the Au-Sn eutectic alloy is formed by mutual diffusion or the like at a relatively low temperature of about 250 °C.

In this example, a mesh-shaped portion of the Au-Sn eutectic alloy joint portion 861 is formed at a joint portion of the following two kinds of metal fine particles 558, and the two kinds of metal fine particles 558 are respectively: "W, Mo, Si a core 658; and a skin 689 of Ni, Cu, Ti, Cr or Ta on the surface of the core 658; and a skin 589 of Au, Ag, or Pt Metal particles 558; and a film composed of "core 658 composed of W, Mo, Si, etc.; and a Sn element of a surface of a core 658, a Sn-Ag alloy, or a Sn-Ag-Cu alloy. Metal particles 558 composed of (skin) 789". Since the melting point of the Au-Sn eutectic alloy joint portion 861 is 275 ° C or higher, the processing temperature can be suppressed to a load temperature of 265 ° C or lower at the time of mounting the semiconductor device, and the strength is maintained.

Fig. 6(e) further shows another example of the surface-plated metal fine particles (conductive fine particles made of metal) 558.

Reference numeral 878 denotes a metal fine particle in which a W particle impregnated with a polyhedron of Cu is used as a core, and a surface of the core is covered with a Sn coating. Reference numeral 978 denotes a metal fine particle in which a W or Mo particle impregnated with a polyhedron of Ag or Cu is used as a core, and a surface of the core is covered with an Au film. When the metal particles 558 having the W particles doped with the polyhedron of Cu are used, the electrical conductivity and the thermal conductivity are better than those of the W particles using the polyhedron. Therefore, the two kinds of metal particles 878 and 978 are used. The resulting porous sintered body (through/embedded electrode) has a coefficient of thermal expansion similar to W when the content of Cu in the interior is 60% by weight or less.

Fig. 6 (f) and Fig. 6 (g) show the state of various fine particles in the inside of the penetrating/embedded electrode.

The porous sintered bodies 57 and 257 constituting the penetrating/insertion electrodes are filled in the inside of the openings 51 and 251, and the thickness direction of the substrate 50 or 250 (the vertical direction in FIGS. 6(f) and 6(g)) is achieved. Electrical connection. With such a configuration, the difference in thermal expansion coefficient between the porous sintered body 57 or 257 constituting the penetrating/embedded electrode and the substrate 50 or 250 such as ruthenium can be kept small, thereby preventing the opening 51 from being formed. Or 251 stress damage occurs. Further, the resistance of the through/embedded electrode can be lowered, and the heat dissipation characteristics of the through/embedded electrode can also be improved.

Fig. 6(h) schematically shows the internal structure of the through/inserted electrode shown in Fig. 6(d). The through/embedded electrode of the same figure includes: a core 658 composed of W, Mo, Si, or the like; and a skin 689 and Au covering Ni, Cu, Ti, Cr, or Ta on the surface thereof, Metal particles 558 composed of Ag or Pt skin 589"; and "core" 658 composed of W, Mo, Si, etc.; and Sn elemental material, Sn-Ag alloy, or Sn covering the surface thereof - Metal particles 558 composed of a skin of the Ag-Cu alloy 789". As shown in the figure, a base material or a partial Au-Sn eutectic alloy joint portion 861 is formed by a joint portion of two kinds of conductive fine particles, and a base material of a porous sintered body (through/embedded electrode) is formed on the base material. The void portion existing around it is filled with indium or indium alloy (melt) 61, 261.

As described above, in the fourth embodiment of the present invention, the method of forming the through/insertion electrode is to prepare a core particle (for example, a fine particle of W) which is coated with the surface of the metal film 589 and 689 which are relatively low-melting. 1 conductive fine particles; and second conductive fine particles composed of core fine particles (for example, fine particles of W) which are coated with the surface of the metal 789 having a relatively high melting point and which are the same as the first conductive fine particles, may be mixed Provided is an electrode structure using the polyhedral conductive particles 358, 458, and 558 of FIG. 6 and having a partial alloy joint portion 589, 789, a reticulated Au-Sn eutectic alloy joint portion 861 to have good electrical conductivity, and Good exothermic, good thermal conductivity and low thermal resistance and low thermal expansion.

Further, since the pseudo sintered body can be obtained at 300 ° C or lower, and the conductive fine particles can be strongly bonded to each other at 275 ° C, the characteristics similar to those of the sintered body composed of the W element can be maintained. Therefore, an electrode or an electrode structure excellent in mounting resistance to electronic parts can be realized.

With the present invention, the reliability and signal transmission characteristics of the through/embedded electrodes can be remarkably improved. With this improvement, it is possible to realize a configuration of a high-density through/insertion electrode that is accompanied by the development of microfabrication of semiconductor manufacturing technology.

Here, the conductive fine particles shown in FIGS. 6(c) to 6(e), that is, the material (electrode material) which can be preferably used in the through/embedded electrode of the present invention, are supplemented as follows. .

(1) The fine particles 458 which are coated with a single film on the surface of the core shown in Fig. 6(b).

As the fine particles which can be used as a core, in addition to the above-mentioned fine particles composed of W, Mo, or Si elemental materials, fine particles of semiconductors other than Si, fine particles of alloys such as chrome-nickel-iron heat-resistant corrosion-resistant alloy, and SiC, may be used. Ceramic particles of AlN, etc.; particles of inorganic materials such as borosilicate glass, TEMPAX glass, Eagle glass; particles of organic materials such as polyimine modified materials; mixtures of organic materials and inorganic materials particle.

A conductive material which can be used as a skin, in addition to the above-mentioned Ni, Cu, Sn, Au, Ag, Pd, Co, Cr, Cu-Sn, Ni-Au, Zn, Al can be used.

(2) Particles 558 having metal films 589 and 689 having two different relatively high melting points as shown in Fig. 6(c).

The particles which can be used as the core 658 are the same as the particles 458 shown in Fig. 6(b).

As the material which can be used as the metal film 589 which is disposed on the outermost side of the relatively high melting point, the above-mentioned Au, Ag, or Pt, and also Pd, Cu or the like can be used.

A material which can be used as the metal film 689 having a relatively high melting point disposed between the core 658 and the outermost metal film 589 can be Pd or Co in addition to the above-described Ni, Cu, Ti, Cr, or Ta.

(3) A fine particle 558 having a metal film 789 having a relatively low melting point as shown in Fig. 6(d).

The particles which can be used as the core 658 are the same as the particles 458 shown in Fig. 6(b).

As a material which can be used as the metal film 789 of a relatively low melting point, in addition to the Sn elemental material, the Sn-Ag alloy, or the Sn-Ag-Cu alloy, Zn, Bi, Ga, Pb, Cu-Sn or the like may be used. .

(4) Metal particles 878 in which the surface of the W-impregnated W particles shown in Fig. 6(e) is covered with a Sn film.

The particles which can be used as a core are the same as the particles 458 shown in Fig. 6(b).

As the material which can be impregnated, in addition to the above Cu, Ag, Zn, Al, Ni, and Cd can be used.

As the material which can be used as a skin, in addition to the above-mentioned Sn element, Zn, Cu, Cd, Cu-Sn, Cu-Sn-Ag or the like can be used.

(5) The metal fine particles 978 in which the surface of the W or Mo particles impregnated with Ag or Cu shown in Fig. 6(e) is covered with an Au film.

The particles which can be used as a core are the same as the particles 458 shown in Fig. 6(b).

As the material which can be impregnated, Ag, Zn, Al, Ni, and Cd can be used in addition to the above Ag and Cu.

As a material which can be used as a skin, in addition to the above Au, Ag, Pt, Pd, Zn, Cu, Cu-Sn, Cu-Sn-Ag or the like can be used.

The preferred embodiments of the present invention have been described above with reference to the drawings. The invention may be embodied in a variety of different forms, and it can be readily understood that various changes in form and details may be made without departing from the spirit and scope of the invention. Therefore, the invention is not limited to the description.

(industrial use possibility)

The through/embedded electrode of the present invention and the method of manufacturing the same are in the semiconductor field, and in particular, the three-dimensional structure is a basic element. Therefore, the present invention is not limited to the through electrode or the embedded electrode, and can be widely applied to the application. A three-dimensional integrated circuit (storage circuit, arithmetic processing circuit, and driver, etc.) or a sensor system.

Claims (9)

A penetrating/embedded electrode comprising: a porous first conductor; a second conductor filled in a void portion inside the first conductor; and the first conductive system covering the conductive film as a core a sintered body of conductive fine particles formed on the surface of the fine particles; the second conductive material is made of a metal or an alloy different from the first conductive material, and the metal or alloy has a ratio of forming the first conductive material a melting point at which the sintering temperature of the conductive fine particles is lower; and in the inside of the first conductive body, an alloy joint portion is formed in a portion where the conductive particles of the conductive fine particles partially contact each other, and the alloy joint portion and the alloy joint portion The remaining conductive film forms a three-dimensional network-shaped conduction path, and the second conductive body is filled in the gap portion between the conductive paths to impart conductivity. The through/embedded electrode of claim 1, wherein the alloy joint portion is formed by a eutectic alloy formed by sintering. The through/embedded electrode of the first aspect of the invention, wherein the conductive fine particles of the first conductor have a thermal expansion coefficient not exceeding 3 times a thermal expansion coefficient of a substrate on which the through/insertion electrode is disposed. The through/embedded electrode of claim 2, wherein the conductive fine particles of the first conductor have a thermal expansion coefficient not exceeding 3 times a thermal expansion coefficient of a substrate on which the through/embedded electrode is disposed. The through/embedded electrode of any one of claims 1 to 4, wherein the above The conductive film of the first conductor is formed of two or more kinds of conductive films having different melting points. An electrode material comprising at least one type of conductive fine particles having a surface of the fine particles of the core covered with a conductive film and having a particle diameter of 0.5 μm to 10 μm; and the conductive fine particles having two different melting points of the conductive film a mixture of the above conductive particles or a conductive film having a multilayer structure including at least two kinds of metals or alloys of different types; the thickness of the conductive film being one-tenth of the size of the conductive particles to 1 to In the range of 1/200, at the time of sintering, the portion of the conductive fine particles in which the conductive films are partially in contact with each other forms an alloy joint portion, and the alloy joint portion and the remaining conductive film form a three-dimensional network. Conduction path. The electrode material of the sixth aspect of the invention, wherein the surface of the fine particles which are the cores is covered with two or more kinds of conductive films having different melting points. The electrode material according to claim 6 or 7, wherein the conductive particles are (a) a metal, an alloy, or a metal compound containing tungsten or molybdenum, (b) a semiconductor, (c) glass, (d) a ceramic or (e) an organic material, or a mixture of the same, wherein the conductive particles have a coefficient of thermal expansion that is not more than three times the coefficient of thermal expansion of the substrate on which the electrode material is disposed (ie, less than or equal to three times) . A method of manufacturing a through/embedded electrode for fabricating a through/embedded electrode disposed in an opening formed in a substrate, characterized by the steps of: Filling the opening with a paste for the first conductive material of the electrode material according to any one of claims 6 to 8 and drying it; and solid-phase sintering the first conductive paste filled in the opening a porous first conductor; a second conductor paste applied to cover the first conductor; and the second conductor paste is heat-treated, melted, impregnated, and cured The first conductor.