TWI588731B - Electronic device and the driving method thereof - Google Patents

Electronic device and the driving method thereof Download PDF

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TWI588731B
TWI588731B TW105132958A TW105132958A TWI588731B TW I588731 B TWI588731 B TW I588731B TW 105132958 A TW105132958 A TW 105132958A TW 105132958 A TW105132958 A TW 105132958A TW I588731 B TWI588731 B TW I588731B
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transistor
line
electronic device
charge
scan line
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TW105132958A
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TW201814479A (en
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戴亞翔
張君毅
邱韋嘉
蕭培宏
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敦泰電子股份有限公司
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電子裝置及其驅動方法 Electronic device and driving method thereof

本發明係關於觸控偵測之技術領域,尤指一種利用電荷分享以進行觸控偵測之電子裝置。 The present invention relates to the technical field of touch detection, and more particularly to an electronic device that utilizes charge sharing for touch detection.

觸控面板的技術原理是當手指或其他介質接觸到螢幕時,依據不同感應方式,以偵測電壓、電流、聲波或紅外線等,進而測出觸壓點的座標位置。例如電阻式觸控面板即為利用上、下電極間的電位差,用以計算施壓點位置來檢測出觸控點所在。電容式觸控面板是利用排列之透明電極與人體之間的靜電結合所產生之電容變化,從所產生之電流或電壓來檢測其座標。 The technical principle of the touch panel is to detect the voltage, current, sound wave or infrared light according to different sensing methods when the finger or other medium touches the screen, and then measure the coordinate position of the touch pressure point. For example, the resistive touch panel uses the potential difference between the upper and lower electrodes to calculate the position of the pressure point to detect the touch point. A capacitive touch panel detects a change in capacitance from a generated current or voltage by utilizing a change in capacitance generated by electrostatic coupling between a transparent electrode arranged and a human body.

依據電容觸控技術原理而言,其可分為表面式電容觸控感測(Surface Capacitive)及投射式電容觸控感測(Projected Capacitive)這兩種技術。表面式電容觸控感測技術架構雖構造簡單,但不易實現多點觸控以及較難克服電磁干擾(Electromagnetic Interference,EMI)及噪訊的問題,使得現今大多朝向投射電容式觸控感測技術發展。 According to the principle of capacitive touch technology, it can be divided into two types: surface capacitive touch sensing (Surface Capacitive) and projected capacitive touch sensing (Projected Capacitive). Although the surface capacitive touch sensing technology architecture is simple in structure, it is difficult to achieve multi-touch and it is difficult to overcome the problems of electromagnetic interference (EMI) and noise, so that most of today's projected capacitive touch sensing technology development of.

投射式電容觸控感測(Projected Capacitive)技術又可分為自感電容型(Self capacitance)及互感電容型(Mutual capacitance)。自感電容型係指觸控物與導體線間產生電容耦合,並量測導體線的電容 變化,用以確定觸碰發生。而互感電容型則是當觸碰發生,會在鄰近兩層導體線間產生電容耦合現象。 Projected Capacitive technology can be divided into Self capacitance and Mutual capacitance. Self-inductive capacitive type refers to capacitive coupling between the touch object and the conductor line, and measures the capacitance of the conductor line. Change to determine the occurrence of a touch. The mutual-capacitance type is a capacitive coupling phenomenon that occurs between two adjacent conductor lines when a touch occurs.

內嵌式(InCell)製作方法能使得顯示器厚度輕薄化,而成為現今中小尺寸的觸控顯示器產品的主流技術。若要將習知的觸控技術擴展至大尺寸觸控面板,會因為尺寸增大而增加電阻電容遲延(RC Delay),於顯示面板驅動時造成雜訊干擾,影響觸控效果。因此,習知觸碰偵測技術實仍有改善的空間。 The in-cell (InCell) manufacturing method can make the thickness of the display thinner and lighter, and become the mainstream technology of the current small and medium size touch display products. To extend the conventional touch technology to a large-size touch panel, the RC delay is increased due to the increase in size, which causes noise interference when the display panel is driven, which affects the touch effect. Therefore, there is still room for improvement in the conventional touch detection technology.

本發明之目的主要係在提供一電子裝置,其中,該電子裝置利用電荷分享,以偵測是否有一外物的觸碰或近接。 The object of the present invention is mainly to provide an electronic device in which the electronic device utilizes charge sharing to detect whether there is a touch or proximity of a foreign object.

依據本發明之一特色,本發明提出一種電子裝置,其包括一第一掃描線、一第二掃描線、一第一資料線、一感測線、一第一電晶體、一像素、一第二電晶體、一充放電裝置。該第一電晶體連接至該第一掃描線及該第一資料線。該像素具有一像素電極連接至該第一電晶體。該第二電晶體連接至該第一掃描線、該像素的一共同電極及該感測線。該充放電裝置耦合至該第二電晶體、該第二掃描線及該感測線;其中,當該第一掃描線為高電位時,該充放電裝置被充電,當該第二掃描線為高電位時,該感測線感測該充放電裝置之電流,以判斷是否有一外物之觸碰或近接。 According to a feature of the present invention, an electronic device includes a first scan line, a second scan line, a first data line, a sensing line, a first transistor, a pixel, and a second A transistor, a charge and discharge device. The first transistor is connected to the first scan line and the first data line. The pixel has a pixel electrode connected to the first transistor. The second transistor is coupled to the first scan line, a common electrode of the pixel, and the sense line. The charge and discharge device is coupled to the second transistor, the second scan line, and the sense line; wherein when the first scan line is at a high potential, the charge and discharge device is charged when the second scan line is high At the potential, the sensing line senses the current of the charging and discharging device to determine whether there is a touch or proximity of the foreign object.

依據本發明之另一特色,本發明提出一種電子裝置之驅動方法,該電子裝置具有一第一掃描線、一第二掃描線、一第一資料線、一感測線及一充放電裝置,該充放電裝置耦合至該該第二掃描線、該第 一資料線及該感測線,該驅動方法於一第一時間間隔,驅動該第一掃描線為高電位,以使該充放電裝置被充電;以及於一第二時間間隔,驅動該第二掃描線為高電位,以使該感測線感測該充放電裝置之電流,據以判斷是否有一外物之觸碰或近接。 According to another feature of the present invention, the present invention provides a driving method for an electronic device, the electronic device having a first scan line, a second scan line, a first data line, a sensing line, and a charge and discharge device. a charge and discharge device coupled to the second scan line, the first a data line and the sensing line, the driving method drives the first scanning line to be high at a first time interval to enable the charging and discharging device to be charged; and drive the second scanning at a second time interval The line is high, so that the sensing line senses the current of the charging and discharging device, thereby determining whether there is a touch or proximity of the foreign object.

100‧‧‧電子裝置 100‧‧‧Electronic devices

110‧‧‧第一掃描線 110‧‧‧First scan line

120‧‧‧第二掃描線 120‧‧‧second scan line

130‧‧‧第一資料線 130‧‧‧First data line

140‧‧‧感測線 140‧‧‧Sensing line

M1‧‧‧第一電晶體 M1‧‧‧first transistor

150‧‧‧像素 150‧‧ ‧ pixels

M2‧‧‧第二電晶體 M2‧‧‧second transistor

160‧‧‧充放電裝置 160‧‧‧Charge and discharge device

M3‧‧‧第三電晶體 M3‧‧‧ third transistor

M4‧‧‧第四電晶體 M4‧‧‧ fourth transistor

M5‧‧‧第五電晶體 M5‧‧‧ fifth transistor

170‧‧‧直流阻隔電容 170‧‧‧DC blocking capacitor

g‧‧‧閘極 G‧‧‧ gate

d‧‧‧汲極 D‧‧‧汲

s‧‧‧源極 S‧‧‧ source

151‧‧‧像素電極 151‧‧‧pixel electrode

153‧‧‧共同電極 153‧‧‧Common electrode

161‧‧‧第一端 161‧‧‧ first end

163‧‧‧第二端 163‧‧‧ second end

190‧‧‧運算放大器 190‧‧‧Operational Amplifier

180‧‧‧等效電容 180‧‧‧ equivalent capacitance

1500‧‧‧手持裝置 1500‧‧‧Handheld device

1510‧‧‧顯示螢幕 1510‧‧‧display screen

1511‧‧‧區域 1511‧‧‧Area

圖1係示意地顯示本發明之電子裝置之示意圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view showing an electronic device of the present invention.

圖2係本發明電子裝置之運作示意圖。 2 is a schematic view showing the operation of the electronic device of the present invention.

圖3係本發明電子裝置之電路圖。 3 is a circuit diagram of an electronic device of the present invention.

圖4及圖5係圖3之電子裝置的運作示意圖。 4 and 5 are schematic diagrams showing the operation of the electronic device of FIG.

圖6、圖7及圖8係圖3之電子裝置的模擬示意圖。 6, FIG. 7, and FIG. 8 are schematic diagrams of the simulation of the electronic device of FIG.

圖9係本發明在不同電容值下是否有外物之觸碰或近接的模擬示意圖。 FIG. 9 is a schematic diagram showing whether the present invention has a touch or proximity of a foreign object under different capacitance values.

圖10係本發明電子裝置之另一電路圖。 Figure 10 is another circuit diagram of the electronic device of the present invention.

圖11及圖12係圖10之電子裝置的模擬示意圖。 11 and 12 are schematic diagrams of the simulation of the electronic device of FIG.

圖13係本發明在有觸碰及沒有觸碰時感測線所感測的電流之模擬示意圖。 Figure 13 is a schematic diagram showing the simulation of the current sensed by the sensing line when there is a touch and no touch.

圖14係本發明一種電子裝置之驅動方法之流程圖。 14 is a flow chart of a driving method of an electronic device according to the present invention.

圖15係本發明一種電子裝置之使用示意圖。 Figure 15 is a schematic view showing the use of an electronic device of the present invention.

為了使本發明的目的、技術方案及優點更加清楚明白,以下結合附圖及實施例,對本發明進行進一步詳細說明。應當理解,此處 所描述的具體實施例僅僅用以解釋本發明,並不用於限定本發明。 The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood here The specific embodiments described are merely illustrative of the invention and are not intended to limit the invention.

圖1係示意地顯示本發明之電子裝置100之示意圖。該電子裝置100包括一第一掃描線110、一第二掃描線120、一第一資料線130、一感測線140、一第一電晶體M1、一像素150、一第二電晶體M2及一充放電裝置160。在本發明之一實施例中,電子裝置100可以是觸控顯示面板。 FIG. 1 is a schematic view showing an electronic device 100 of the present invention. The electronic device 100 includes a first scan line 110, a second scan line 120, a first data line 130, a sensing line 140, a first transistor M1, a pixel 150, a second transistor M2, and a Charge and discharge device 160. In an embodiment of the invention, the electronic device 100 may be a touch display panel.

第一電晶體M1連接至該第一掃描線110及該第一資料線130。該像素150具有一像素電極151連接至該第一電晶體M1。該第二電晶體M2連接至該第一掃描線110、該像素150的一共同電極(common electrode)153及該感測線140。該充放電裝置160耦合至該第二電晶體M2、該第二掃描線120及該感測線140。 The first transistor M1 is connected to the first scan line 110 and the first data line 130. The pixel 150 has a pixel electrode 151 connected to the first transistor M1. The second transistor M2 is connected to the first scan line 110 , a common electrode 153 of the pixel 150 , and the sensing line 140 . The charge and discharge device 160 is coupled to the second transistor M2, the second scan line 120, and the sense line 140.

其中,當該第一掃描線110為高電位時,該充放電裝置160被充電,當該第二掃描線120為高電位時,該感測線140感測該充放電裝置160之電流,以判斷是否有一外物之觸碰或近接。該感測線140連接至一運算放大器190,以將該充放電裝置160之電流轉換成一觸碰感測電壓,俾供後續觸碰偵測使用。 When the first scan line 110 is at a high potential, the charge and discharge device 160 is charged. When the second scan line 120 is at a high potential, the sense line 140 senses the current of the charge and discharge device 160 to determine Is there a touch or proximity of the foreign object? The sensing line 140 is coupled to an operational amplifier 190 to convert the current of the charging and discharging device 160 into a touch sensing voltage for subsequent touch detection.

圖2係本發明電子裝置100之運作示意圖。如圖2所示,外物之觸碰或近接該電子裝置100時產生一電容效應,亦即有一因外物之觸碰或近接所生成之等效電容180會與該充放電裝置160並聯。該等效電容180並非實際的電容,其係模擬外物之觸碰或近接該電子裝置100時所產生的電容效應。該充放電裝置160與外物之觸碰或近接所生成之等效電容180產生一電荷分享效應。 2 is a schematic diagram of the operation of the electronic device 100 of the present invention. As shown in FIG. 2, when the external object touches or approaches the electronic device 100, a capacitive effect is generated, that is, an equivalent capacitance 180 generated by the touch or proximity of the foreign object is connected in parallel with the charging and discharging device 160. The equivalent capacitor 180 is not an actual capacitor, which is a capacitive effect generated when a foreign object is touched or is in close proximity to the electronic device 100. The charge-discharge device 160 generates a charge sharing effect by the equivalent capacitance 180 generated by the touch or proximity of the foreign object.

由於電荷分享效應,因此,當有外物之觸碰或近接時,該 感測線140感測該充放電裝置160之電流係小於沒有該外物之觸碰或近接時之該充放電裝置160的電流。藉此,即可偵測是否有外物之觸碰或近接。於圖2中,其所繪示並非實際元件的尺寸,其僅是為了說明電子裝置100之運作。 Due to the charge sharing effect, when there is a touch or proximity of the foreign object, The sensing line 140 senses that the current of the charging and discharging device 160 is smaller than the current of the charging and discharging device 160 when there is no touch or proximity of the foreign object. In this way, it is possible to detect whether there is a touch or proximity of the foreign object. In FIG. 2, the dimensions of the actual components are not shown, but are merely for explaining the operation of the electronic device 100.

圖3係本發明電子裝置100之電路圖。如圖3所示,該電子裝置100包含一第一掃描線110、一第二掃描線120、一第一資料線130、一感測線140、一第一電晶體M1、一像素150、一第二電晶體M2、一充放電裝置160、一第三電晶體M3、一第四電晶體M4、一第五電晶體M5、及一直流阻隔電容170。該第一至第五電晶體M1~M5可為低溫多晶矽(Low Temperature Poly-silicon,LTPS)電晶體、氧化銦鎵鋅(Indium Gallium Zinc Oxide,IGZO)電晶體、或非晶矽(a-Si)電晶體。 3 is a circuit diagram of an electronic device 100 of the present invention. As shown in FIG. 3, the electronic device 100 includes a first scan line 110, a second scan line 120, a first data line 130, a sensing line 140, a first transistor M1, a pixel 150, and a first The second transistor M2, a charge and discharge device 160, a third transistor M3, a fourth transistor M4, a fifth transistor M5, and a DC blocking capacitor 170. The first to fifth transistors M1 to M5 may be Low Temperature Poly-silicon (LTPS) transistors, Indium Gallium Zinc Oxide (IGZO) transistors, or amorphous germanium (a-Si). ) A transistor.

該第一電晶體M1的閘極g連接至該第一掃描線110,其汲極d連接至該第一資料線130,其源極s連接至該像素150的該像素電極151。該第二電晶體M2的閘極g連接至該第一掃描線110,其汲極d連接至該感測線140,其源極s連接至該像素的該共同電極153,該充放電裝置160為一電容。 The gate g of the first transistor M1 is connected to the first scan line 110, the drain d is connected to the first data line 130, and the source s is connected to the pixel electrode 151 of the pixel 150. The gate g of the second transistor M2 is connected to the first scan line 110, the drain d is connected to the sensing line 140, and the source s is connected to the common electrode 153 of the pixel. The charge and discharge device 160 is A capacitor.

該第三電晶體M3的閘極g及汲極d連接至該第一掃描線110,其源極s連接至該充放電裝置160的一第一端161。該第四電晶體M4的閘極g連接至該第二掃描線120,其汲極d連接至該像素150的該共同電極153,其源極s連接至該充放電裝置160的該第一端161。該第五電晶體M5的閘極g連接至該充放電裝置160的該第一端161, 其汲極d連接至該感測線140,其源極s連接至該充放電裝置160的一第二端163。該直流阻隔電容170的第一端連接至該充放電裝置160的該第二端163,其一第二端連接至該第二掃描線120。 The gate g and the drain d of the third transistor M3 are connected to the first scan line 110, and the source s is connected to a first end 161 of the charge and discharge device 160. The gate g of the fourth transistor M4 is connected to the second scan line 120, the drain d is connected to the common electrode 153 of the pixel 150, and the source s is connected to the first end of the charging and discharging device 160. 161. a gate g of the fifth transistor M5 is connected to the first end 161 of the charging and discharging device 160, The drain d is connected to the sensing line 140, and the source s is connected to a second end 163 of the charging and discharging device 160. The first end of the DC blocking capacitor 170 is connected to the second end 163 of the charging and discharging device 160, and a second end thereof is connected to the second scanning line 120.

圖4及圖5係圖3之電子裝置100的運作示意圖。如圖4所示,當該第一掃描線110為高電位且該第二掃描線120為低電位時時,該第一電晶體M1、該第二電晶體M2、及該第三電晶體M3導通,該第一資料線上130的電壓對該充放電裝置160充電,而使該充放電裝置160儲存高電位。該感測線140上的電壓經由該第二電晶體M2而傳遞至該共同電極(common electrode)153。 4 and 5 are schematic diagrams showing the operation of the electronic device 100 of FIG. As shown in FIG. 4, when the first scan line 110 is at a high potential and the second scan line 120 is at a low potential, the first transistor M1, the second transistor M2, and the third transistor M3 are Turning on, the voltage on the first data line 130 charges the charge and discharge device 160, and the charge and discharge device 160 stores the high potential. The voltage on the sensing line 140 is transferred to the common electrode 153 via the second transistor M2.

如圖5所示,當該第二掃描線120為高電位且該第一掃描線110為低電位時,該第一電晶體M1、該第二電晶體M2、及該第三電晶體M3關閉,該第四電晶體M4及該第五電晶體M5導通,該充放電裝置160與外物之觸碰或近接所生成之等效電容180產生一電荷分享效應。同時,該充放電裝置160的電流經由該第五電晶體M5而傳輸至該感測線140。 As shown in FIG. 5, when the second scan line 120 is at a high potential and the first scan line 110 is at a low potential, the first transistor M1, the second transistor M2, and the third transistor M3 are turned off. The fourth transistor M4 and the fifth transistor M5 are turned on, and the equivalent capacitance 180 generated by the charging/discharging device 160 and the touch or proximity of the foreign object generates a charge sharing effect. At the same time, the current of the charging and discharging device 160 is transmitted to the sensing line 140 via the fifth transistor M5.

由於電荷分享效應,當有外物之觸碰或近接時,該感測線140感測該充放電裝置160之電流小於沒有該外物之觸碰或近接時之該充放電裝置160的電流,藉此,即可偵測是否有外物之觸碰或近接。該直流阻隔電容170可將直流漏電流截掉,如此該感測線140的電壓即可提高至正常的共同電壓(VCom),而僅感測該第二掃描線120的訊號由低電位切換到高電位時的暫態電流,並達到降低整個觸控系統功率的消耗。 Due to the charge sharing effect, when there is a touch or proximity of the foreign object, the sensing line 140 senses that the current of the charging and discharging device 160 is smaller than the current of the charging and discharging device 160 when there is no touch or proximity of the foreign object. In this way, it is possible to detect whether there is a touch or proximity of the foreign object. The DC blocking capacitor 170 can cut off the DC leakage current, so that the voltage of the sensing line 140 can be increased to a normal common voltage (VCom), and only the signal of the second scanning line 120 is sensed to be switched from a low potential to a high level. The transient current at the potential and the reduction in power consumption of the entire touch system.

圖6、圖7及圖8係圖3之電子裝置100的模擬示意圖。其係模擬電子裝置100相關節點的電壓和感測電流。圖6係顯示該第一掃描線110的电压vgate 1 in、該第二掃描線120的电压vgate 2 in、及一第三掃描線上的電壓vgate 3 in之示意圖。圖7係顯示有觸碰及沒有觸碰時各節點的電壓之示意圖。其中,圖7中VPreset表示圖3中節點Preset的電壓,圖7中VPixel表示圖3中像素電極151的電壓,圖7中Vcom表示圖3中共同電極153的電壓。圖8係顯示有觸碰及沒有觸碰時該感測線140所感測的電流之模擬示意圖。由前述模擬結果可以發現,透過電荷分享的技術,本發明可以成功地偵測出是否有外物之觸碰或近接。 6, FIG. 7, and FIG. 8 are schematic diagrams of the simulation of the electronic device 100 of FIG. It simulates the voltage and sense current of the relevant node of the electronic device 100. 6 is a schematic diagram showing the voltage vgate 1 in of the first scan line 110, the voltage vgate 2 in of the second scan line 120, and the voltage vgate 3 in on a third scan line. Figure 7 is a diagram showing the voltage of each node when there is a touch and no touch. Here, VPreset in FIG. 7 represents the voltage of the node Preset in FIG. 3, VPixel in FIG. 7 represents the voltage of the pixel electrode 151 in FIG. 3, and Vcom in FIG. 7 represents the voltage of the common electrode 153 in FIG. FIG. 8 is a schematic diagram showing the simulation of the current sensed by the sensing line 140 when there is a touch and no touch. From the foregoing simulation results, it can be found that the present invention can successfully detect whether there is a touch or proximity of a foreign object through the technique of charge sharing.

圖9係本發明在不同電容值下是否有外物之觸碰或近接的模擬示意圖。對於不同等效電容180的模擬分析,其係針對三種不同的外物之觸碰或近接時所生成之等效電容180來進行討論。分別為例A:等效電容180為10fF、充放電裝置160為5fF;例B:等效電容180為20fF、充放電裝置160為10fF;例C:等效電容180為30fF、充放電裝置160為20fF。由電流模擬結果可得知其觸控與否之感測電流差異,其差異可利用該運算放大器190及積分器(圖未示)將其放大讀出。進一步將三種不同觸控電容條件之模擬結果整理至圖9中。 FIG. 9 is a schematic diagram showing whether the present invention has a touch or proximity of a foreign object under different capacitance values. For the simulation analysis of different equivalent capacitors 180, it is discussed for the touch capacitance of three different foreign objects or the equivalent capacitance 180 generated when the proximity is made. Example A: equivalent capacitance 180 is 10fF, charge and discharge device 160 is 5fF; example B: equivalent capacitance 180 is 20fF, charge and discharge device 160 is 10fF; example C: equivalent capacitance 180 is 30fF, charge and discharge device 160 It is 20fF. The difference between the sense currents of the touch and the touch can be obtained from the current simulation result, and the difference can be amplified and read by the operational amplifier 190 and an integrator (not shown). Further, the simulation results of three different touch capacitance conditions are organized into FIG.

經由圖9結果可知,本發明之電子裝置100確可分辨出觸控與否的差異,並該電子裝置100中的外物之觸碰或近接時所生成之等效電容180可小至10fF的水準。 It can be seen from the results of FIG. 9 that the electronic device 100 of the present invention can distinguish the difference between the touch and the touch, and the equivalent capacitance 180 generated when the foreign object in the electronic device 100 is touched or connected can be as small as 10 fF. level.

圖10係本發明電子裝置100之另一電路圖。如圖10所示,該電子裝置100包含一第一掃描線110、一第二掃描線120、一第 一資料線130、一感測線140、一第一電晶體M1、一像素150、一第二電晶體M2、一充放電裝置160、一第三電晶體M3及一第四電晶體M4。該第一至第四電晶體M1~M4係為低溫多晶矽(LTPS)電晶體、氧化銦鎵鋅(IGZO)電晶體、或非晶矽(a-Si)電晶體。 FIG. 10 is another circuit diagram of the electronic device 100 of the present invention. As shown in FIG. 10, the electronic device 100 includes a first scan line 110, a second scan line 120, and a first A data line 130, a sensing line 140, a first transistor M1, a pixel 150, a second transistor M2, a charge and discharge device 160, a third transistor M3 and a fourth transistor M4. The first to fourth transistors M1 to M4 are low temperature polycrystalline germanium (LTPS) transistors, indium gallium zinc oxide (IGZO) transistors, or amorphous germanium (a-Si) transistors.

該第三電晶體M3的閘極g連接至該充放電裝置160的第一端161及共同電極(common electrode)153,其汲極d連接至該感測線140。該第四電晶體M4的閘極g連接至該第二掃描線120,其汲極d連接至該第三電晶體M3的一源極s,其源極s連接至該第二掃描線140。 The gate g of the third transistor M3 is connected to the first end 161 of the charging and discharging device 160 and a common electrode 153, and the drain d is connected to the sensing line 140. The gate g of the fourth transistor M4 is connected to the second scan line 120, the drain d is connected to a source s of the third transistor M3, and the source s is connected to the second scan line 140.

當該第一掃描線110為高電位時,該第一電晶體M1及該第二電晶體M2導通,該感測線140上的電壓(Vsense)經由該第二電晶體M2而傳遞至該共同電極153(common electrode),並對該充放電裝置160充電至高電位。當該第二掃描線120為高電位時,該第一電晶體M1及該第二電晶體M2關閉,該第三電晶體M3及該第四電晶體M4導通,該充放電裝置160與外物之觸碰或近接所生成之等效電容180產生一電荷分享效應,該充放電裝置160的電流經由該第三電晶體M3而傳輸至該感測線140。 When the first scan line 110 is at a high potential, the first transistor M1 and the second transistor M2 are turned on, and a voltage (Vsense) on the sensing line 140 is transmitted to the common electrode via the second transistor M2. 153 (common electrode), and charging the charging and discharging device 160 to a high potential. When the second scan line 120 is at a high potential, the first transistor M1 and the second transistor M2 are turned off, and the third transistor M3 and the fourth transistor M4 are turned on, and the charge and discharge device 160 and the foreign object The equivalent capacitance 180 generated by the touch or proximity generates a charge sharing effect, and the current of the charging and discharging device 160 is transmitted to the sensing line 140 via the third transistor M3.

如圖10所示,其與圖3的電子裝置100主要差異在於圖10之電子裝置100為4T1C之電路設計,較圖3的電子裝置10之電路設計少一個電晶體,因此其電路設計之開口率更高。該第四電晶體M4的目的是作為一個二極體(diode)的功用來形成大電阻,以防止該感測線140上的電流(Isense)經過該第三電晶體M3流向該第四電晶體M, 而使訊號電流下降,如此就能將感測端電壓提高至正常的共同電壓(VCom),並僅感測該第二掃描線140的訊號由低電位切換到高電位時的暫態電流,據以達到整個觸控系統的精準度。 As shown in FIG. 10, the main difference between the electronic device 100 and the electronic device 100 of FIG. 3 is that the electronic device 100 of FIG. 10 is a circuit design of 4T1C, and one circuit is smaller than the circuit design of the electronic device 10 of FIG. The rate is higher. The purpose of the fourth transistor M4 is to form a large resistance as a diode function to prevent a current (Isense) on the sensing line 140 from flowing to the fourth transistor M through the third transistor M3. , The signal current is decreased, so that the sense terminal voltage can be raised to a normal common voltage (VCom), and only the transient current when the signal of the second scan line 140 is switched from a low potential to a high potential can be sensed. To achieve the accuracy of the entire touch system.

圖11及圖12係圖10之電子裝置100的模擬示意圖。其係模擬電子裝置100相關節點的電壓和感測電流。圖11係顯示有觸碰及沒有觸碰時共同電極153的電壓及像素電極151的電壓之示意圖。由圖11的模擬結果可以發現,透過電荷分享的技術,本發明可以成功地偵測出是否有外物之觸碰或近接。圖12係顯示有觸碰及沒有觸碰時,像素電極151的電壓(VPixel)減去共同電極153的電壓(Vcom)之示意圖。像素電極151的電壓減去共同電極153的電壓係表示施加於該像素150上的電壓,亦即為液晶的操作電壓。由圖12的液晶電壓維持訊號模擬結果可知液晶的操作電壓可以保持在一定的電壓以上,亦即本發明的技術不論是否有外物之觸碰或近接,均能使液晶正常的操作。 11 and 12 are schematic diagrams of the simulation of the electronic device 100 of FIG. It simulates the voltage and sense current of the relevant node of the electronic device 100. Fig. 11 is a view showing the voltage of the common electrode 153 and the voltage of the pixel electrode 151 when there is a touch and no touch. From the simulation results of FIG. 11, it can be found that the present invention can successfully detect whether there is a touch or a close contact of a foreign object through the technique of charge sharing. Fig. 12 is a view showing the voltage (VPixel) of the pixel electrode 151 minus the voltage (Vcom) of the common electrode 153 when there is a touch and no touch. The voltage of the pixel electrode 151 minus the voltage of the common electrode 153 indicates the voltage applied to the pixel 150, that is, the operating voltage of the liquid crystal. It can be seen from the liquid crystal voltage sustaining signal simulation result of FIG. 12 that the operating voltage of the liquid crystal can be maintained above a certain voltage, that is, the technology of the present invention enables normal operation of the liquid crystal regardless of whether a foreign object touches or is in close proximity.

圖13係本發明在有觸碰及沒有觸碰時該感測線140所感測的電流之模擬示意圖。如圖13所示,有觸碰時該感測線140所感測的電流差如橢圓B所示,沒有觸碰時該感測線140所感測的電流差如橢圓A所示。由圖13可知,有觸碰及沒有觸碰時該感測線140所感測的電流差值約2μA。其可經由該運算放大器190輕易地分別出是否有觸碰或沒有觸碰。亦即本案的技術可輕易地偵測出外物之觸碰或近接。 FIG. 13 is a schematic diagram showing the simulation of the current sensed by the sensing line 140 in the presence and absence of a touch. As shown in FIG. 13, when there is a touch, the current difference sensed by the sensing line 140 is as shown by the ellipse B, and the current difference sensed by the sensing line 140 when there is no touch is as shown by the ellipse A. As can be seen from FIG. 13, the current difference sensed by the sensing line 140 when touched and not touched is about 2 [mu]A. It can be easily separated by the operational amplifier 190 whether there is a touch or no touch. That is to say, the technology of the present case can easily detect the touch or proximity of the foreign object.

圖14係本發明一種電子裝置100之驅動方法之流程圖。如前述圖1所示,該電子裝置100具有一第一掃描線110、一第二掃描線120、一第一資料線130、一感測線140及一充放電裝置160。該充 放電裝置160耦合至該第一掃描線110、該第二掃描線130、該第一資料線130及該感測線140,該驅動方法首先於步驟(A)中,於一第一時間間隔,驅動該第一掃描線110為高電位,以使該充放電裝置160被充電。於步驟(B)中,於一第二時間間隔,驅動該第二掃描線120為高電位,以使該感測線140感測該充放電裝置160之電流,據以判斷是否有外物之觸碰或近接。 14 is a flow chart of a driving method of an electronic device 100 according to the present invention. As shown in FIG. 1 , the electronic device 100 has a first scan line 110 , a second scan line 120 , a first data line 130 , a sensing line 140 , and a charge and discharge device 160 . The charge The discharge device 160 is coupled to the first scan line 110, the second scan line 130, the first data line 130, and the sense line 140. The driving method is first driven in a first time interval in step (A). The first scan line 110 is at a high potential to cause the charge and discharge device 160 to be charged. In the step (B), the second scan line 120 is driven to a high potential at a second time interval, so that the sensing line 140 senses the current of the charging and discharging device 160, thereby determining whether there is a foreign object touch. Touch or close.

外物之觸碰或近接會產生一電容效應。該充放電裝置160與外物之觸碰或近接所生成之等效電容180產生一電荷分享效應。當有外物之觸碰或近接時,該感測線140感測該充放電裝置160之電流小於沒有外物之觸碰或近接時之該充放電裝置160的電流。 Touch or proximity of foreign objects creates a capacitive effect. The charge-discharge device 160 generates a charge sharing effect by the equivalent capacitance 180 generated by the touch or proximity of the foreign object. When there is a touch or proximity of the foreign object, the sensing line 140 senses that the current of the charging and discharging device 160 is smaller than the current of the charging and discharging device 160 when there is no touch or proximity of the foreign object.

圖15係本發明之一實施例的電子裝置100之使用示意圖。本實施可以是例如手機的手持裝置1500。由前述說明可知,本發明電子裝置100可與顯示裝置的像素共存,因此可以運用於手持裝置1500的一顯示螢幕1510中。在該整個顯示螢幕1510中,在X方向及Y方向上,例如每隔100個像素,即設置一個本發明實施例的電子裝置100,因此可在該整個顯示螢幕1510中提供外物觸碰或近接的偵測功能。在X方向及Y方向,每隔多少個像素設置一個本發明實施例的電子裝置100,可依據所需要的觸碰偵測的解析度而定,此乃該技術領域者依據本發明之揭露所能完成,不再贅述。 Figure 15 is a schematic illustration of the use of an electronic device 100 in accordance with one embodiment of the present invention. This implementation may be a handheld device 1500 such as a cell phone. As can be seen from the foregoing description, the electronic device 100 of the present invention can coexist with the pixels of the display device, and thus can be applied to a display screen 1510 of the handheld device 1500. In the entire display screen 1510, an electronic device 100 of the embodiment of the present invention is disposed in the X direction and the Y direction, for example, every 100 pixels, so that a foreign object touch can be provided in the entire display screen 1510 or Proximity detection function. In the X direction and the Y direction, the electronic device 100 of the embodiment of the present invention is disposed every other number of pixels, which may be determined according to the resolution of the required touch detection, which is disclosed by the technical person in accordance with the present invention. Can be completed, no longer repeat them.

於其他實施例中,本發明實施例的電子裝置100係運用於圖15中的該顯示螢幕1510的一區域1511中。在該區域1511中,在X方向及Y方向,每隔一個像素,即設置一個本發明電子裝置100。 一般手指指紋的指紋峰(ridge)的有效寬度約200μm~300μm。而一個顯示像素的大小約為5μm。因此每隔一個像素,即設置一個本發明實施例電子裝置100時,可有效地偵測並正確地獲得指紋的感測影像。因此可在該顯示螢幕1510的區域1511中提供指紋偵測的功能。而無需另外設置一個指紋偵測按鈕,可有效增大手持裝置1500的顯示區域。 In other embodiments, the electronic device 100 of the embodiment of the present invention is applied to an area 1511 of the display screen 1510 of FIG. In this region 1511, one electronic device 100 of the present invention is provided every other pixel in the X direction and the Y direction. Generally, the fingerprint ridge has an effective width of about 200 μm to 300 μm. The size of one display pixel is about 5 μm. Therefore, every other pixel, that is, when the electronic device 100 of the embodiment of the present invention is disposed, the sensing image of the fingerprint can be effectively detected and correctly obtained. Therefore, the function of fingerprint detection can be provided in the area 1511 of the display screen 1510. There is no need to additionally set a fingerprint detection button, which can effectively increase the display area of the handheld device 1500.

本案之電子裝置的設計是利用五顆薄膜電晶體及一顆電容或四顆薄膜電晶體及一顆電容所組成。當運用於內嵌式觸控面板時,薄膜電晶體及電容的製程上可使用顯示面板的製程,保有內嵌式(In Cell)的觸控技術,而可維持顯示面板輕薄化的優點。同時可利用本案電子裝置100的電容與手指的電容做電荷分享,用以偵測顯示面板上是否有手指的觸碰或近接。本案利用電荷分享觀念,能輕易解決傳統大尺寸觸控面板所面臨電阻電容遲延(RC Delay)的問題,亦可輕易實現輕薄型、低耗能、低成本的觸控顯示器。在本發明另一實施例中,也可用在提供指紋偵測功能的電子裝置,同時顯示及提供指紋偵測,可有效增大手持裝置的顯示區域。 The electronic device of this case is designed by using five thin film transistors and one capacitor or four thin film transistors and one capacitor. When applied to an in-cell touch panel, the process of the display panel can be used in the process of the thin film transistor and the capacitor, and the in-cell (In Cell) touch technology is maintained, and the advantage of the display panel being light and thin can be maintained. At the same time, the capacitance of the electronic device 100 and the capacitance of the finger can be used for charge sharing to detect whether there is a finger touch or proximity on the display panel. This case uses the concept of charge sharing to easily solve the problem of resistance and capacitance delay (RC Delay) faced by traditional large-size touch panels, and can easily realize a thin, low-energy, low-cost touch display. In another embodiment of the present invention, the electronic device that provides the fingerprint detection function can simultaneously display and provide fingerprint detection, which can effectively increase the display area of the handheld device.

上述實施例僅係為了方便說明而舉例而已,本發明所主張之權利範圍自應以申請專利範圍所述為準,而非僅限於上述實施例。 The above-mentioned embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

100‧‧‧電子裝置 100‧‧‧Electronic devices

110‧‧‧第一掃描線 110‧‧‧First scan line

120‧‧‧第二掃描線 120‧‧‧second scan line

130‧‧‧第一資料線 130‧‧‧First data line

140‧‧‧感測線 140‧‧‧Sensing line

M1‧‧‧第一電晶體 M1‧‧‧first transistor

150‧‧‧像素 150‧‧ ‧ pixels

M2‧‧‧第二電晶體 M2‧‧‧second transistor

160‧‧‧充放電裝置 160‧‧‧Charge and discharge device

M3‧‧‧第三電晶體 M3‧‧‧ third transistor

M4‧‧‧第四電晶體 M4‧‧‧ fourth transistor

M5‧‧‧第五電晶體 M5‧‧‧ fifth transistor

170‧‧‧直流阻隔電容 170‧‧‧DC blocking capacitor

g‧‧‧閘極 G‧‧‧ gate

d‧‧‧汲極 D‧‧‧汲

s‧‧‧源極 S‧‧‧ source

151‧‧‧像素電極 151‧‧‧pixel electrode

153‧‧‧共同電極 153‧‧‧Common electrode

161‧‧‧第一端 161‧‧‧ first end

163‧‧‧第二端 163‧‧‧ second end

190‧‧‧運算放大器 190‧‧‧Operational Amplifier

Claims (15)

一種電子裝置,包括:一第一掃描線、及一第二掃描線;一第一資料線;一感測線;一第一電晶體,連接至該第一掃描線及該第一資料線;一像素,具有一像素電極連接至該第一電晶體;一第二電晶體,連接至該第一掃描線、該像素的一共同電極及該感測線;以及一充放電裝置,耦合至該第二電晶體、該第二掃描線及該感測線;其中,當該第一掃描線為高電位時,該充放電裝置被充電,當該第二掃描線為高電位時,該感測線感測該充放電裝置之電流,以判斷是否有一外物之觸碰或近接。 An electronic device comprising: a first scan line and a second scan line; a first data line; a sensing line; a first transistor connected to the first scan line and the first data line; a pixel having a pixel electrode connected to the first transistor; a second transistor connected to the first scan line, a common electrode of the pixel and the sensing line; and a charge and discharge device coupled to the second a transistor, the second scan line, and the sensing line; wherein, when the first scan line is at a high potential, the charge and discharge device is charged, and when the second scan line is at a high potential, the sense line senses the The current of the charging and discharging device to determine whether there is a touch or proximity of the foreign object. 如申請專利範圍第1項所述之電子裝置,其中,該外物之觸碰或近接產生一電容效應,該充放電裝置與該外物之觸碰或近接所生成之等效電容產生一電荷分享效應。 The electronic device of claim 1, wherein the touch or proximity of the foreign object generates a capacitive effect, and the charge and discharge device generates a charge by an equivalent capacitance generated by the touch or proximity of the foreign object. Sharing effect. 如申請專利範圍第2項所述之電子裝置,其中,當有該外物之觸碰或近接時,該感測線感測該充放電裝置之電流小於沒有該外物之觸碰或近接時之該充放電裝置的電流。 The electronic device of claim 2, wherein when the foreign object touches or is in proximity, the sensing line senses that the current of the charging and discharging device is less than when there is no touch or proximity of the foreign object. The current of the charge and discharge device. 如申請專利範圍第3項所述之電子裝置,其中,該第一電晶體的閘極連接至該第一掃描線,其汲極連接至該第一資料線,其源極連接至該像素的該像素電極,該第二電晶體的閘極連接至該第一掃描 線,其汲極連接至該感測線,其源極連接至該像素的該共同電極,該充放電裝置為一電容。 The electronic device of claim 3, wherein the gate of the first transistor is connected to the first scan line, the drain of the first transistor is connected to the first data line, and the source thereof is connected to the pixel. The pixel electrode, the gate of the second transistor is connected to the first scan a line, the drain of which is connected to the sensing line, the source of which is connected to the common electrode of the pixel, and the charging and discharging device is a capacitor. 如申請專利範圍第4項所述之電子裝置,其更包含:一第三電晶體,其閘極及汲極連接至該第一掃描線,其源極連接至該充放電裝置的一第一端;一第四電晶體,其閘極連接至該第二掃描線,其汲極連接至該像素的該共同電極,其源極連接至該充放電裝置的該第一端;一第五電晶體,其閘極連接至該充放電裝置的該第一端,其汲極連接至該感測線,其源極連接至該充放電裝置的一第二端;以及一直流阻隔電容,其第一端連接至該充放電裝置的該第二端,其一第二端連接至該第二掃描線。 The electronic device of claim 4, further comprising: a third transistor having a gate and a drain connected to the first scan line, and a source connected to the first of the charge and discharge device a fourth transistor having a gate connected to the second scan line, a drain connected to the common electrode of the pixel, a source connected to the first end of the charge and discharge device, and a fifth electrode a crystal having a gate connected to the first end of the charging and discharging device, a drain connected to the sensing line, a source connected to a second end of the charging and discharging device, and a DC blocking capacitor, the first The end is connected to the second end of the charging and discharging device, and a second end thereof is connected to the second scanning line. 如申請專利範圍第5項所述之電子裝置,其中,當該第一掃描線為高電位時,該第一電晶體、該第二電晶體、及該第三電晶體導通,該第一資料線上的電壓對該充放電裝置充電,該感測線上的電壓經由該第二電晶體而傳遞至該共同電極。 The electronic device of claim 5, wherein when the first scan line is at a high potential, the first transistor, the second transistor, and the third transistor are turned on, the first data The voltage on the line charges the charge and discharge device, and the voltage on the sense line is transmitted to the common electrode via the second transistor. 如申請專利範圍第6項所述之電子裝置,其中,當該第二掃描線為高電位時,該第一電晶體、該第二電晶體、及該第三電晶體關閉,該第四電晶體及該第五電晶體導通,該充放電裝置與該外物之觸碰或近接所生成之等效電容產生一電荷分享效應,該充放電裝置的電流經由該第五電晶體而傳輸至該感測線。 The electronic device of claim 6, wherein when the second scan line is at a high potential, the first transistor, the second transistor, and the third transistor are turned off, the fourth device The crystal and the fifth transistor are turned on, and the equivalent capacitance generated by the charging or discharging device and the contact or proximity of the foreign object generates a charge sharing effect, and the current of the charging and discharging device is transmitted to the current through the fifth transistor. Sensing line. 如申請專利範圍第5項所述之電子裝置,其中,該第一至第五電晶體係為低溫多晶矽電晶體、氧化銦鎵鋅電晶體、或非晶矽電晶體。 The electronic device of claim 5, wherein the first to fifth electro-crystalline systems are low-temperature polycrystalline germanium transistors, indium gallium zinc oxide crystals, or amorphous germanium transistors. 如申請專利範圍第4項所述之電子裝置,其更包含: 一第三電晶體,其閘極連接至該充放電裝置的該第一端及該共同電極,其汲極連接至該感測線;以及一第四電晶體,其閘極連接至該第二掃描線,其汲極連接至該第三電晶體的一源極,其源極連接至該第二掃描線;其中,該充放電裝置的一第二端連接至該第二掃描線。 The electronic device of claim 4, further comprising: a third transistor having a gate connected to the first end of the charge and discharge device and the common electrode, the drain of which is connected to the sensing line; and a fourth transistor whose gate is connected to the second scan a drain having a drain connected to a source of the third transistor and a source connected to the second scan line; wherein a second end of the charge and discharge device is coupled to the second scan line. 如申請專利範圍第9項所述之電子裝置,其中,當該第一掃描線為高電位時,該第一電晶體及該第二電晶體導通,該感測線上的電壓經由該第二電晶體而傳遞至該共同電極,並對該充放電裝置充電。 The electronic device of claim 9, wherein when the first scan line is at a high potential, the first transistor and the second transistor are turned on, and the voltage on the sense line is via the second The crystal is transferred to the common electrode, and the charging and discharging device is charged. 如申請專利範圍第10項所述之電子裝置,其中,當該第二掃描線為高電位時,該第一電晶體及該第二電晶體關閉,該第三電晶體及該第四電晶體導通,該充放電裝置與該外物之觸碰或近接所生成之等效電容產生一電荷分享效應,該充放電裝置的電流經由該第三電晶體而傳輸至該感測線。 The electronic device of claim 10, wherein when the second scan line is at a high potential, the first transistor and the second transistor are turned off, and the third transistor and the fourth transistor are Turning on, the charge and discharge device generates a charge sharing effect by the equivalent capacitance generated by the touch or proximity of the foreign object, and the current of the charge and discharge device is transmitted to the sensing line via the third transistor. 如申請專利範圍第9項所述之電子裝置,其中,該第一至第四電晶體係為低溫多晶矽電晶體、氧化銦鎵鋅電晶體、或非晶矽電晶體。 The electronic device of claim 9, wherein the first to fourth electro-crystalline systems are low-temperature polycrystalline germanium transistors, indium gallium zinc oxide crystals, or amorphous germanium transistors. 一種電子裝置之驅動方法,該電子裝置具有一第一掃描線、一第二掃描線、一感測線及一充放電裝置,該充放電裝置耦合至該第二掃描線及該感測線,該驅動方法包含:於一第一時間間隔,驅動該第一掃描線為高電位、該第二掃描線為低電位,以使該充放電裝置被充電;以及 於一第二時間間隔,驅動該第二掃描線為高電位、該第一掃描線為低電位,以使該感測線感測該充放電裝置之電流,據以判斷是否有一外物之觸碰或近接。 A driving method of an electronic device, the electronic device having a first scanning line, a second scanning line, a sensing line and a charging and discharging device, the charging and discharging device being coupled to the second scanning line and the sensing line, the driving The method includes: driving the first scan line to a high potential and the second scan line to a low potential at a first time interval to enable the charge and discharge device to be charged; And driving the second scan line to a high potential and the first scan line to be low, so that the sensing line senses the current of the charging and discharging device, thereby determining whether there is a foreign object touch Or close proximity. 如申請專利範圍第13項所述之電子裝置之驅動方法,其中,該外物之觸碰或近接產生一電容效應,該充放電裝置與該外物之觸碰或近接所生成之等效電容產生一電荷分享效應。 The driving method of the electronic device according to claim 13, wherein the touch or proximity of the foreign object generates a capacitive effect, and the equivalent capacitance generated by the charging or discharging device and the external object touch or proximity Produces a charge sharing effect. 如申請專利範圍第14項所述之電子裝置之驅動方法,其中,當有該外物之觸碰或近接時,該感測線感測該充放電裝置之電流小於沒有該外物之觸碰或近接時之該充放電裝置的電流。 The driving method of the electronic device according to claim 14, wherein when the foreign object touches or is in proximity, the sensing line senses that the current of the charging and discharging device is smaller than a touch without the foreign object or The current of the charge and discharge device when it is in close proximity.
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