TWI585035B - A waste acid recycling process - Google Patents

A waste acid recycling process Download PDF

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TWI585035B
TWI585035B TW104128074A TW104128074A TWI585035B TW I585035 B TWI585035 B TW I585035B TW 104128074 A TW104128074 A TW 104128074A TW 104128074 A TW104128074 A TW 104128074A TW I585035 B TWI585035 B TW I585035B
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gas
sulfuric acid
waste acid
acid liquid
purity
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TW201708100A (en
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Xu-Qiang Fang
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Honorable Eng Co Ltd
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Description

一種廢酸液循環使用之製程 Process for recycling waste acid liquid

本發明係關於一種將半導體工業之廢酸液,回收並重新製成可使用之半導體級硫酸之製程。 This invention relates to a process for recovering and reconstituting a spent acid acid from the semiconductor industry into a usable semiconductor grade sulfuric acid.

硫酸(H2SO4),係為一種具有高腐蝕性的強礦物酸,對金屬、生物組織及岩石等物質具有腐蝕性。 Sulfuric acid (H 2 SO 4 ) is a highly corrosive strong mineral acid that is corrosive to metals, biological tissues and rocks.

硫酸之製造為,先於空氣中燃燒硫磺產生二氧化硫(SO2)氣體,經過純化和除去雜質後,讓二氧化硫與氧氣於以五氧化二釩(V2O5)為催化劑的高溫環境中,氧化成三氧化硫(SO3),之後再用濃硫酸吸收三氧化硫,形成發煙硫酸(H2S2O7,亦寫作H2SO4‧SO3),最後把發煙硫酸以水稀釋,形成98%的硫酸。 Sulfuric acid is produced by burning sulfur in air to produce sulfur dioxide (SO 2 ) gas. After purification and impurity removal, sulfur dioxide and oxygen are oxidized in a high temperature environment using vanadium pentoxide (V 2 O 5 ) as a catalyst. Sulfur trioxide (SO 3 ), followed by absorption of sulfur trioxide with concentrated sulfuric acid to form fuming sulfuric acid (H 2 S 2 O 7 , also known as H 2 SO 4 ‧ SO 3 ), and finally dilute the fuming sulfuric acid with water Forming 98% sulfuric acid.

而現今半導體工業在製程中,如晶圓表面處理,會使用大量半導體級硫酸,因而產生大量的廢硫酸液,然而這些廢硫酸液中仍含有50%以上的硫酸、金屬以及其他雜質,若未經處理而直接排放到環境中,不僅對水、土壤以及環境生態造成危害,也形成資源的浪費。 In today's semiconductor industry, such as wafer surface treatment, a large amount of semiconductor grade sulfuric acid is used, which produces a large amount of waste sulfuric acid solution. However, these waste sulfuric acid liquids still contain more than 50% sulfuric acid, metals and other impurities. Direct discharge into the environment after treatment not only causes damage to water, soil and environmental ecology, but also creates waste of resources.

習知廢硫酸液之處理方式有以下幾種:1.中和處理:廢硫酸液經酸鹼中和後以廢水形式排出、2.回收再利用:將廢硫酸液濃縮成工業級硫酸使用、3.衍生利用:將廢硫酸液製成肥料或農藥,如硫酸銨與硫酸銅等。 The treatment methods of the conventional waste sulfuric acid solution are as follows: 1. Neutralization treatment: the waste sulfuric acid solution is discharged as waste water after neutralization by acid and alkali, 2. Recycling and reuse: the waste sulfuric acid liquid is concentrated into industrial grade sulfuric acid, 3. Derivatization: The waste sulfuric acid solution is made into fertilizer or pesticide, such as ammonium sulfate and copper sulfate.

上述之處理方法,雖可解決部分廢硫酸液問題,然而半導體工業 對半導體級硫酸之需求龐大且源源不絕,因此龐大之廢硫酸液仍會不斷產生,在全球環保意識高漲且認知到地球資源有限的情況下,資源回收循環經濟已成為全世界的潮流趨勢,如何有效利用資源以及循環利用資源,將廢棄物進行資源化再生使用,以解決資源短缺及環境污染之問題,並達到資源永續且符合經濟效益,為當今亟待結解決之重要課題。 Although the above treatment method can solve the problem of partial waste sulfuric acid solution, the semiconductor industry The demand for semiconductor grade sulfuric acid is huge and the source is endless. Therefore, the huge waste sulfuric acid solution will continue to be generated. With the global environmental awareness and the limited global resources, the recycling economy has become a trend in the world. How to effectively use resources and recycle resources, recycling and recycling waste to solve the problem of resource shortage and environmental pollution, and to achieve sustainable resources and economic benefits, is an important issue to be solved today.

本發明之目的在提供一種廢酸液循環使用之製程,係將半導體工業產生之大量一廢酸液經過回收處理後再製得一半導體級硫酸,該半導體級硫酸可直接循環使用於半導體製程,如晶圓表面之處理,故可降低業界對半導體級硫酸之龐大的需求,以及處理該廢酸液之成本,亦減少因廢酸液排放而對環境造成之危害。 The object of the present invention is to provide a process for recycling waste acid liquid, which is obtained by recycling a large amount of waste acid liquid produced by the semiconductor industry to obtain a semiconductor grade sulfuric acid, which can be directly recycled to a semiconductor process, such as The processing of the wafer surface can reduce the industry's huge demand for semiconductor grade sulfuric acid, as well as the cost of processing the spent acid solution, and also reduce the environmental damage caused by the waste acid solution.

該廢酸液係選自廢硫酸、硫化氫、含硫之可燃氣體或廢有機溶劑等。 The spent acid solution is selected from the group consisting of waste sulfuric acid, hydrogen sulfide, sulfur-containing combustible gas or waste organic solvent.

為達上述之目的,本發明之技術手段在於:將該廢酸液導入一分解爐中,加熱後產生SO2,接著透過降溫及純化產生純SO2氣體,並將純SO2氣體通過一轉換塔,該轉換塔中填有一催化劑,使純SO2氣體轉換成SO3氣體;接著將SO3氣體導入一吸收塔中,被該吸收塔中既有之硫酸及水吸收,即得一發煙硫酸,將該發煙硫酸導入薄膜蒸餾器中製得無金屬之高純度SO3氣體,此高純度SO3氣體經一除霧器除去液態硫酸及固體雜質後,再以一惰性氣體稀釋此無金屬之高純度SO3氣體,此稀釋有助於降低殘留在SO3氣體中之SO2氣體,亦可降低後續製程中SO2氣體被高純度稀硫酸溶液吸收之可能性,接著將此SO3氣體導入高純度稀硫酸中,當SO3氣體被高純度稀硫酸吸收後,即產生一高純度硫酸,再將該高 純度硫酸過濾並去除其殘留之固體雜質,除去雜質後之該高純度硫酸即成為一半導體級硫酸,再將該半導體級硫酸導入一產物塔中,於該產物塔中透過一高純度去離子水調整該半導體級硫酸之濃度,調整至符合半導體工業製程所需之濃度。 For the above purposes, the technical means of the present invention consists in introducing the spent acid solution into a decomposition furnace, heating to produce SO 2 , followed by cooling and purification to produce pure SO 2 gas, and passing pure SO 2 gas through a conversion. a tower, the conversion tower is filled with a catalyst to convert pure SO 2 gas into SO 3 gas; then the SO 3 gas is introduced into an absorption tower, which is absorbed by the existing sulfuric acid and water in the absorption tower, that is, a cigarette is obtained. Sulfuric acid, the fuming sulfuric acid is introduced into a thin film distiller to obtain a metal-free high-purity SO 3 gas, and the high-purity SO 3 gas is removed by a demister to remove liquid sulfuric acid and solid impurities, and then diluted with an inert gas. Metallic high purity SO 3 gas, this dilution helps to reduce the SO 2 gas remaining in the SO 3 gas, and also reduces the possibility of SO 2 gas being absorbed by the high purity dilute sulfuric acid solution in the subsequent process, and then this SO 3 The gas is introduced into the high-purity dilute sulfuric acid. When the SO 3 gas is absorbed by the high-purity dilute sulfuric acid, a high-purity sulfuric acid is generated, and the high-purity sulfuric acid is filtered and the residual solid impurities are removed to remove the impurities. which is Sulfuric acid as a semiconductor grade, a semiconductor grade sulfuric acid was added and the product was introduced into a column through a column of high purity to the product of deionized water to adjust the concentration of the semiconductor grade sulfuric acid, the concentration is adjusted to meet the desired drive system of the semiconductor industry.

S1~S8‧‧‧步驟 S1~S8‧‧‧Steps

1‧‧‧廢酸液 1‧‧‧ Waste acid solution

2‧‧‧分解爐 2‧‧‧Decomposition furnace

3‧‧‧轉換塔 3‧‧‧ Conversion Tower

4‧‧‧催化劑 4‧‧‧ Catalyst

5‧‧‧吸收塔 5‧‧‧ absorption tower

6‧‧‧水 6‧‧‧ water

7‧‧‧發煙硫酸 7‧‧‧Fume sulfuric acid

8‧‧‧惰性氣體 8‧‧‧Inert gas

9‧‧‧薄膜蒸餾器 9‧‧‧film distiller

91‧‧‧除霧器 91‧‧‧ defogger

10‧‧‧濾器 10‧‧‧ filter

11‧‧‧導管 11‧‧‧ catheter

12‧‧‧高純度去離子水 12‧‧‧High purity deionized water

13‧‧‧高純度硫酸 13‧‧‧High purity sulfuric acid

14‧‧‧反應塔 14‧‧‧Reaction tower

15‧‧‧過濾管 15‧‧‧Filter tube

151‧‧‧過濾膜 151‧‧‧Filter membrane

16‧‧‧產物塔 16‧‧‧Product Tower

17‧‧‧半導體級硫酸 17‧‧‧Semiconductor grade sulfuric acid

第1圖係為本發明之方塊流程圖。 Figure 1 is a block flow diagram of the present invention.

第2圖係為本發明之裝置示意圖。 Figure 2 is a schematic view of the apparatus of the present invention.

第3圖係為本發明之裝置部分放大說明示意圖。 Figure 3 is a schematic enlarged view of a portion of the apparatus of the present invention.

為便於 貴審查委員能對本新型之技術手段及運作過程有更進一步之認識與瞭解,茲舉實施例配合圖式,詳細說明如下。 In order to facilitate the review committee to have a better understanding and understanding of the technical means and operation process of the present invention, the embodiments are combined with the drawings, and the details are as follows.

請參閱第1至3圖所示,本發明提供之一種廢酸液循環使用之製程,依據下列步驟流程進行: Referring to Figures 1 to 3, the process for recycling waste acid liquid provided by the present invention is carried out according to the following steps:

首先,將一廢酸液1導入一分解爐2中,進行步驟S1,將該廢酸液1加熱至溫度600℃到700℃之間,此時該廢酸液1會生成SO2氣體、氧氣(O2)及水蒸氣(H2O)等;接著進行步驟S2,將步驟S1所產生之SO2氣體降溫至250℃至350℃間,並經過一純化過程除去灰燼微粒及微量之SO3,即得純化之純SO2氣體;接著進行步驟S3,將純SO2氣體通過一轉換塔4,該轉換塔4中填有一催化劑8,當純SO2氣體通過該轉換塔4時會被轉換成SO3氣體;接著進行步驟S4,將步驟S3所產生之SO3氣體移至一吸收塔5中,該SO3氣體會被該吸收塔5中既有之硫酸吸收,產生一發煙硫酸7(Oleum);接著進行步驟S5,將該發煙硫酸7導入一薄膜蒸餾器9中,利用薄膜蒸餾法於溫度60℃到140℃間再次產生SO3氣體,並去除固體雜質,透過薄 膜蒸餾法可產生無金屬之高純度SO3氣體;接著進行步驟S6將該SO3氣體導入一濾器10中,除去殘餘之液態硫酸;接著進行步驟S8,將SO3氣體透過一導管11導入一反應塔14中,導入該反應塔14中SO3氣體會被該反應塔14中既有之高純度稀硫酸所吸收,即產生一高純度硫酸13,當SO3氣體流經該導管11時,於該導管11中添加1%至50%之一惰性氣體8(步驟S7),該惰性氣體8則會稀釋SO3氣體中微量之SO2氣體,如此可降低SO2氣體於後續製程中被高純度稀硫酸溶液吸收之可能性;接著於步驟S8中將該高純度硫酸13通過一過濾管15流入一產物塔16中,該過濾管15內設有一過濾膜151,當該高純度硫酸13通過該過濾膜151導入該產物塔16時,即過濾該高純度硫酸13中殘留之固體雜質,去除雜質之該高純度硫酸13即成為一半導體級硫酸17。 First, a waste acid solution 1 is introduced into a decomposition furnace 2, and step S1 is performed to heat the waste acid solution 1 to a temperature between 600 ° C and 700 ° C. At this time, the spent acid solution 1 generates SO 2 gas and oxygen. (O 2 ) and water vapor (H 2 O), etc.; then proceeding to step S2, cooling the SO 2 gas generated in step S1 to between 250 ° C and 350 ° C, and removing ash particles and trace amounts of SO 3 through a purification process Purified pure SO 2 gas; then proceeding to step S3, passing pure SO 2 gas through a conversion column 4, which is filled with a catalyst 8 which is converted when the pure SO 2 gas passes through the conversion tower 4 to SO 3 gas; followed by step S4, in step S3 arising moved to a SO 3 gas absorption tower 5, the SO 3 gas is absorbed in the absorbing column 5 of both sulfuric acid, fuming sulfuric acid to produce out of 7 (Oleum); then proceeding to step S5, introducing the fuming sulfuric acid 7 into a thin film distiller 9, regenerating SO 3 gas at a temperature of 60 ° C to 140 ° C by thin film distillation, and removing solid impurities, and passing through the thin film distillation method Producing a metal-free high-purity SO 3 gas; then performing the step S6 to introduce the SO 3 gas into a filter 10, the removal of the liquid sulfuric acid residue; followed by step S8, the SO 3 gas is introduced into a reaction column 14 through a conduit 11, is introduced into the reaction column 14 is in the SO 3 gas in both the high purity of the reaction column 14 Absorbed by dilute sulfuric acid, that is, a high-purity sulfuric acid 13 is generated. When the SO 3 gas flows through the conduit 11, 1% to 50% of the inert gas 8 is added to the conduit 11 (step S7), and the inert gas 8 is sO 3 gas will dilute trace of sO 2 gas, thus reduce the possibility of sO 2 gas to be absorbed in subsequent processes high-purity sulfuric acid solution; then the high purity sulfuric acid in step S8 13 through a filter 15 into tube In the product tower 16, a filter membrane 151 is disposed in the filter tube 15. When the high-purity sulfuric acid 13 is introduced into the product tower 16 through the filtration membrane 151, the solid impurities remaining in the high-purity sulfuric acid 13 are filtered to remove impurities. The high-purity sulfuric acid 13 becomes a semiconductor grade sulfuric acid 17.

透過上述之步驟,可將該廢酸液1製成該半導體級硫酸17,並可重新使用於半導體製程上,如此達到將該半導體級硫酸17循環再使用之目的,而本發明所產生之該半導體級硫酸17之規格詳如附件。 Through the above steps, the waste acid solution 1 can be made into the semiconductor grade sulfuric acid 17 and can be reused in the semiconductor process, so as to achieve the purpose of recycling the semiconductor grade sulfuric acid 17 for recycling. The specifications of the semiconductor grade sulfuric acid 17 are detailed in the annex.

請再參閱第3圖所示,該半導體級硫酸17,可再藉由於該產物塔16中添加1%至50%之一高純度去離子水12,調整該半導體級硫酸17之濃度,以符合半導體工業製程之所需。 Referring to FIG. 3 again, the semiconductor grade sulfuric acid 17 can be adjusted by adding 1% to 50% of high purity deionized water 12 to the product column 16 to adjust the concentration of the semiconductor grade sulfuric acid 17 to meet The needs of the semiconductor industry process.

其中該廢酸液1係選自廢硫酸、硫化氫、含硫之可燃氣體或廢有機溶劑等。 The waste acid solution 1 is selected from the group consisting of waste sulfuric acid, hydrogen sulfide, sulfur-containing combustible gas or waste organic solvent.

其中,步驟S3中所添加之該催化劑4可為五氧化二釩(Vanadium(V)oxide,V2O5)。 The catalyst 4 added in the step S3 may be vanadium pentoxide (V 2 O 5 ).

步驟S5係將步驟S4所產生之該發煙硫酸7導入具有一除霧器91之該薄膜蒸餾器9中,藉由薄膜蒸餾法,在60℃到140℃之溫度下將SO3氣體從該發 煙硫酸7中分離出來,得到無金屬之高純度SO3氣體,接著於步驟S6中,再將SO3氣體導入該濾器10中,除去殘餘之液態硫酸及固體雜質。 Step S5, the fuming sulfuric acid 7 produced in step S4 is introduced into the thin film distiller 9 having a demister 91, and the SO 3 gas is taken from the temperature at a temperature of 60 ° C to 140 ° C by a thin film distillation method. The fuming sulfuric acid 7 is separated to obtain a metal-free high-purity SO 3 gas, and then in step S6, SO 3 gas is introduced into the filter 10 to remove residual liquid sulfuric acid and solid impurities.

上述步驟S7中所添加之該惰性氣體8,亦可用高純度的氮氣或空氣取代之。 The inert gas 8 added in the above step S7 may be replaced by high purity nitrogen or air.

步驟S8中所產生之該高純度硫酸13,透過該過濾管15導入該產物塔16中,而該過濾管15內所設有之該過濾膜151其孔徑需小於1μm,且其材質可為全氟烷氧基乙烯基醚共聚物(PFA)或是氟化聚烯烴(fluorinated polyolefin)等。 The high-purity sulfuric acid 13 produced in the step S8 is introduced into the product tower 16 through the filter tube 15, and the filter membrane 151 disposed in the filter tube 15 has a pore diameter of less than 1 μm, and the material thereof can be all A fluoroalkoxy vinyl ether copolymer (PFA) or a fluorinated polyolefin or the like.

本發明利用半導體工業產生之大量該廢酸液1經過回收處理後再製得該半導體級硫酸17,如此之製程不僅建立了新的循環經濟模型將該廢酸液1再生及再利用使得資源可永續利用,也實踐了綠色環保之生產,同時亦創造新的環保產業,又,透過本發明再製得之該半導體級硫酸17可直接循環使用於半導體工業製程,除了可降低業界對該半導體級硫酸17之需求以及處理該廢酸液1之成本,亦可減少因該廢酸液1排放而對環境造成之危害以及能源之耗損。 The invention utilizes a large amount of the waste acid solution 1 produced by the semiconductor industry to be recovered and processed to obtain the semiconductor grade sulfuric acid 17. The process not only establishes a new circular economy model, but also regenerates and reuses the waste acid solution 1 so that the resources can be forever Continued use, also practiced the production of green environmental protection, and also created a new environmental protection industry. Moreover, the semiconductor grade sulfuric acid 17 remanufactured by the present invention can be directly recycled in the semiconductor industry process, in addition to reducing the industry-grade sulfuric acid. The demand of 17 and the cost of processing the spent acid solution 1 can also reduce the environmental damage caused by the waste acid 1 discharge and the energy consumption.

上列詳細說明係針對本發明之可行實施例之具體說明,惟該實施例並非用以限制本發明之專利範圍,凡未脫離本發明技藝精神所為之等效實施或變更,均應包含於本案之專利範圍中。 The detailed description of the preferred embodiments of the present invention is not intended to limit the scope of the present invention, and the equivalent implementations or modifications of the present invention should be included in the present invention. In the scope of patents.

S1-S8‧‧‧步驟 S1-S8‧‧‧ steps

Claims (9)

一種廢酸液循環使用之製程,該製程步驟包括:將一廢酸液導入一分解爐中,將該廢酸液加熱,產生SO2氣體、氧氣及水蒸氣,再將SO2氣體降溫產生純SO2氣體;將純SO2氣體通過一轉換塔,該轉換塔中填有一催化劑,可將純SO2氣體轉換成SO3氣體;將SO3氣體導入一吸收塔中,該SO3氣體會被該吸收塔中所具有之硫酸及水吸收,產生一發煙硫酸;將該發煙硫酸導入具有一除霧器之一薄膜蒸餾器中,利用薄膜蒸餾法再次產生SO3氣體,再將該SO3氣體導入一濾器中,產生高純度且無金屬之SO3氣體;將SO3氣體透過一導管導入一反應塔中,被該反應塔中既有之高純度稀硫酸所吸收,即產生一高純度硫酸,並於該導管中添加一惰性氣體;以及將該高純度硫酸通過一過濾管過濾,即得一半導體級硫酸。 A process for recycling waste acid liquid, the process comprising: introducing a waste acid liquid into a decomposition furnace, heating the waste acid liquid to generate SO 2 gas, oxygen and water vapor, and then cooling the SO 2 gas to produce pure SO 2 gas; passing pure SO 2 gas through a conversion tower filled with a catalyst to convert pure SO 2 gas into SO 3 gas; introducing SO 3 gas into an absorption tower, the SO 3 gas will be The sulfuric acid and water contained in the absorption tower are absorbed to generate a fuming sulfuric acid; the fuming sulfuric acid is introduced into a thin film distiller having a mist eliminator, and the SO 3 gas is again generated by thin film distillation, and the SO is further generated. 3 gas is introduced into a filter to produce a high-purity and metal-free SO 3 gas; the SO 3 gas is introduced into a reaction tower through a conduit, and is absorbed by the high-purity dilute sulfuric acid in the reaction tower, that is, a high Purity sulfuric acid, and adding an inert gas to the conduit; and filtering the high-purity sulfuric acid through a filter tube to obtain a semiconductor grade sulfuric acid. 如申請專利範圍第1項所述之廢酸液循環使用之製程,其中該廢酸液係選自廢硫酸、硫化氫以及含硫之可燃氣體。 The process for recycling waste acid liquid as described in claim 1, wherein the waste acid liquid is selected from the group consisting of waste sulfuric acid, hydrogen sulfide, and sulfur-containing combustible gas. 如申請專利範圍第1項所述之廢酸液循環使用之製程,其中可於一產物塔中添加1%至50%之一高純度去離子水,以調整該半導體級硫酸之濃度,以符合半導體工業製程之所需。 For the recycling process of the waste acid solution described in claim 1, wherein 1% to 50% of high-purity deionized water may be added to a product tower to adjust the concentration of the semiconductor-grade sulfuric acid to meet The needs of the semiconductor industry process. 如申請專利範圍第1項所述之廢酸液循環使用之製程,其中將該廢酸液加熱之溫度範圍為600℃到700℃。 The process for recycling waste acid liquid as described in claim 1, wherein the waste acid liquid is heated at a temperature ranging from 600 ° C to 700 ° C. 如申請專利範圍第1項所述之廢酸液循環使用之製程,其中將SO2降溫之溫度範圍為250℃至350℃。 The process for recycling waste acid liquid as described in claim 1 wherein the temperature at which SO 2 is cooled is in the range of 250 ° C to 350 ° C. 如申請專利範圍第1項所述之廢酸液循環使用之製程,其中薄膜蒸餾法反應之溫度範圍為60℃到140℃。 The process for recycling waste acid liquid as described in claim 1 wherein the temperature of the thin film distillation reaction is in the range of 60 ° C to 140 ° C. 如申請專利範圍第1項所述之廢酸液循環使用之製程,其中該惰性氣體可為高純度的氮氣或空氣,且添加量為1%至50%。 The process for recycling waste acid liquid as described in claim 1 wherein the inert gas is high purity nitrogen or air and is added in an amount of from 1% to 50%. 如申請專利範圍第1項所述之廢酸液循環使用之製程,其中該過濾管內設有一過濾膜,其孔徑小於1μm。 The process for recycling waste acid liquid as described in claim 1, wherein the filter tube is provided with a filter membrane having a pore diameter of less than 1 μm. 如申請專利範圍第9項所述之廢酸液循環使用之製程,其中該過濾膜之材質可為全氟烷氧基乙烯基醚共聚物(PFA)以及氟化聚烯烴(fluorinated polyolefin)。 The process for recycling waste acid liquid as described in claim 9 wherein the filter film is made of a perfluoroalkoxy vinyl ether copolymer (PFA) and a fluorinated polyolefin.
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