TWI584403B - Electrostatic chuck - Google Patents

Description

Static fixture

Embodiments of the present invention generally relate to electrostatic chucks for supporting substrates.

An electrostatic chuck can be used to secure the substrate and process the substrate on the substrate support. The components of the electrostatic chuck may include electrodes and grooves, the electrodes fix the substrate, and the grooves are disposed on one surface of the electrostatic chuck to provide a back side gas to the back surface of the substrate.

A typical electrostatic clamp may include an electrode that provides a strong clamp force, but some of the clamp force cannot be controlled when the clamp force is unloaded. In addition, these electrodes can impart uneven clamping force from side to side. In addition, in some electrostatic chucks with grooves, the substrate cooling rate at the center and edge of the substrate may be insufficient. In addition, an arc can be seen in the gas trench below the substrate. The components of these electrostatic chucks may affect the handling of the substrate. Therefore, this paper provides an improved design of the electrostatic chuck.

An embodiment of an electrostatic chuck is provided herein. In some embodiments, the electrostatic chuck comprises: a bottom plate, a ceramic plate supported by the bottom plate, the ceramic plate having a substrate support surface, at least one electrode, the at least one electrode being disposed on the ceramic plate And a plurality of trenches formed on the surface of the substrate holder of the ceramic board, wherein the plurality of trenches comprise one or more circular trenches, one or more radial trenches, and one or More offset grooves.

In some embodiments, an electrostatic chuck for fixing a substrate includes: a bottom plate, a ceramic plate, a ceramic plate supported by the bottom plate, the ceramic plate having a substrate support surface, and a plurality of electrodes, wherein the plurality of electrodes are disposed in the ceramic plate, Each of the plurality of electrodes can be independently controlled to provide the desired clamp force power and frequency.

In some embodiments, an apparatus for processing a substrate includes: a chamber defining a processing area, an electrostatic chuck, and an electrostatic chuck for fixing the substrate in the processing area, the electrostatic chuck comprising: a bottom plate, a ceramic plate, a ceramic The plate is supported by the bottom plate, the ceramic plate has a substrate support surface, a plurality of electrodes, and a plurality of electrodes are disposed in the ceramic plate, wherein each of the plurality of electrodes can be separately controlled, and a plurality of grooves, a plurality of grooves a groove formed on a surface of the substrate holder of the ceramic plate, wherein the plurality of grooves comprise one or more circular grooves, one or more radial grooves, and one or more offset grooves; and a plurality of power sources, each A power supply coupled to the respective ones of the plurality of electrodes allows each of the electrodes to be independently controlled.

Other and further embodiments of the invention will be described below

100‧‧‧Substrate support

102‧‧‧ chamber wall

101‧‧‧Substrate

103‧‧‧Upselling

107‧‧‧Upper pin hole

105‧‧‧Upper

109‧‧‧Upper pin hole

106‧‧‧ internal volume

104‧‧‧ Subject

110‧‧‧Electrostatic fixture

108‧‧‧Processing volume

113‧‧‧External volume

111‧‧‧Feedback structure

114‧‧‧lower opening

112‧‧‧ Bellows

118‧‧‧ openings

115‧‧‧O-ring

117‧‧‧Flange

119‧‧‧Outer wall/O-ring

123‧‧‧Retainer

121‧‧‧ inner wall

122‧‧‧floor

120‧‧‧Ceramic plates

128‧‧‧Processing surface

124‧‧‧ trench

132‧‧‧Power source

126‧‧‧electrode

136‧‧‧ coolant source

130‧‧‧ gas source

201‧‧‧ gap

131‧‧‧Power source

202‧‧‧Counter drilling opening

134‧‧‧Cooling plate

208‧‧‧fasteners

138‧‧‧ Lifting mechanism

212‧‧‧Characteristics

200‧‧‧fasteners

217‧‧‧Central gas line

204‧‧‧ head

219‧‧‧ gas passage

206‧‧‧Sedimentation ring

224‧‧‧O-ring

210‧‧‧Counter drilling opening

225‧‧‧O-ring

211‧‧‧Porous socket

302‧‧‧Circular groove

221‧‧‧ openings

306‧‧‧Polt groove

223‧‧‧second socket

404‧‧‧External electrode

226‧‧ ‧ spring

408‧‧‧ Radial

228‧‧‧O-ring

402‧‧‧External electrode

304‧‧‧ Radial groove

406‧‧‧Area

A more detailed description of the present invention, which is set forth in the <RTIgt; However, it should be noted that the drawings depict only the code of the invention. The type of embodiment is not to be construed as limiting the scope of the invention, as the invention may be otherwise

Figure 1 shows a schematic side view of a substrate support in accordance with some embodiments of the present invention.

2 shows a schematic side view of an electrostatic chuck in accordance with some embodiments of the present invention.

Figure 3 shows a schematic view of the trench from the top of the surface of the electrostatic chuck facing the substrate in accordance with some embodiments of the present invention.

4A-B show top down schematic views of electrodes of an electrostatic chuck in accordance with some embodiments of the present invention.

For ease of understanding, the same reference numbers will be used, where possible, to the It is contemplated that elements disclosed in one embodiment may be advantageously utilized in other embodiments without particular recitation.

Embodiments of electrostatic chucks are provided herein. The apparatus of the present invention may advantageously provide improved substrate processing, such as by confining an arc to a region of the substrate where the arc is between the substrate support member and the plasma and/or by control Adjust the amount of fixture power provided by the electrostatic fixture. Additionally, the electrostatic chuck can be mounted such that it can be detachable and/or replaceable. In some embodiments, the substrate support can be used at low temperatures, for example, ranging from about -40 to about 250 degrees Celsius. In some embodiments, a substrate holder can be used with a substrate having a diameter greater than about 400 millimeters. Other and further advantages will be discussed below.

FIG. 1 shows a side schematic view of a substrate holder 100 in accordance with some embodiments of the present invention. As shown in FIG. 1, the substrate holder 100 is disposed at a loading position where a substrate 101 is received or removed. For example, as shown in FIG. 1, in the loading position, the substrate 101 can rest on a plurality of rising pins 103 above the substrate holder 100. The substrate holder 100 can be disposed in a processing chamber (a cross-sectional view of the chamber wall 102 is shown in FIG. 1). The processing chamber can be any suitable substrate processing chamber.

The substrate holder 100 can include a body 104. The body 104 may have an interior volume 106 and an exterior volume 113. The internal volume 106 can be separated from the processing volume 108 of the processing chamber. Interior volume 106 may be maintained in place under atmospheric conditions, e.g., 14.7 pounds per square inch (PSI), or held under an inert atmosphere, such as nitrogen (N ₂₎ or a similar environment. The interior volume 106 is more isolated and free of contact with any gas that may be present in the interior volume 106 of the processing chamber. The treatment volume 108 can be maintained at or below atmospheric pressure. The external volume may be open to the process volume 108 and may be considered as a passage volume to the lift pin 103. For example, the substrate holder 100 can bypass the rising pins 103 (which are fixed) of the upper rising pin holes 107, and the upper rising pin holes 107 are disposed in the electrostatic chuck 110 and the lower rising pin holes 109 are disposed in the body 104. .

The interior volume 106 can be enclosed by an electrostatic chuck 110 and a feedthrough structure 111 that is located at the upper end 105 of the body 104, which may be welded or brazed to the lower opening 114 of the body 104. For example, as with a plurality of O-rings 115 as shown in FIGS. 1-2, the O-rings 115 can be disposed between each of the outer wall 119 and the inner wall 121 of the body 104 and the electrostatic chuck 110. As shown in FIGS. 1-2, an outer volume 113 may be formed on the inner wall 119 and the outer wall 121. between. For example, as in FIG. 1, the bellows 112 is shown to enclose at least a portion of the feedthrough structure 111 and to isolate the process volume 108 from the exterior of the chamber and the interior volume 106. The bellows 112 can provide a flexible portion to facilitate movement of the substrate support 100 or to provide a means to provide gas, electrical power, coolant, etc. to the substrate support 100. Gas, electrical power, coolant, and the like may be provided by the feedthrough structure 111. As shown in FIG. 1, the feedthrough structure 111 can include a fixture 123 in the interior volume 106 for providing separate gas lines, power lines, and coolant lines from the feedthrough structure 111. The holder 123 can be utilized to separate individual gas lines, power lines, and coolant lines, and can include any suitable material for this purpose. Although shown in FIG. 1 on the body 104, the holder 123 can be disposed in any suitable location, such as feedthrough structure 111 or the like.

The bellows 112 can be coupled to the lower opening 114 of the body 104, for example, by welding or brazing. The opposite lower end 116 of the bellows 112 can be coupled to the opening 118 at the chamber wall 102. For example, as shown in FIG. 1, the lower end 116 of the bellows 112 can include a flange 117 that can be coupled to the chamber wall 102 through an O-ring 119 or a copper gasket. O-ring 119 may be disposed in the groove on the processing volume on the surface facing chamber wall 102. Other designs and couplings of the bellows 112 to the body 104 and the chamber wall 102 are possible.

The electrostatic chuck 110 may include a ceramic plate 120 and a bottom plate 122. As shown in FIG. 1, the ceramic plate 120 may be disposed on the bottom plate 122 and the bottom plate may be fixed to the upper end portion 105 of the body 104. The ceramic plate 120 may comprise any suitable ceramic material, such as aluminum nitride (AlN), aluminum oxide (Al ₂ O ₃ ), or doped ceramics such as titanium doped alumina, lanthanum, cerium doped Aluminum nitride or the like. As shown in FIG. 1, the ceramic plate 120 may include a plurality of grooves 124 formed on the substrate support surface of the ceramic plate 120. The trench can be used, for example, to provide a backside gas to the back side of the substrate 101. With respect to Figure 3, the trenches are discussed in more detail below. The ceramic plate 120 can further include a plurality of electrodes 126 in which the substrate 101 can be secured to the processing surface 128 of the electrostatic chuck 110 using a plurality of electrodes 126. Electrode 126 is discussed in more detail below and illustrated in Figures 4A-B. The bottom plate 122 may include one or more of molybdenum (Mo), aluminum (Al), titanium (Ti), tantalum carbide aluminum alloy composite, or the like.

As shown in FIG. 2, the bottom plate 122 can be secured to the upper end 105 of the body 104 by a plurality of fasteners 200. This method of fastening may allow the electrostatic chuck 110 to be detached from the substrate holder 100, such as for repair, replacement, or the like.

For example, the fastener 200 can be a screw, bolt or the like as shown in FIG. For example, a fastener can be used to compress an O-ring (such as an O-ring 115), a gasket, or the like between the bottom plate 122 and the upper end 105 of the body 104 to form a seal. The fasteners 200 can be disposed adjacent the bottom plate 122, for example, as evenly spaced to provide a uniform seal between the bottom plate 122 and the upper end 105. In some embodiments, the fastener 200 can be used in an amount of about twenty-four.

In some embodiments, the fastener 200 can be at least partially embedded in the bottom plate 122, as shown in FIG. For example, the bottom plate 122 can include a plurality of counter bore openings 202 to at least partially embed the fastener 200. As shown in Figure 2, each counter bore opening 202 partially allows each tight The firmware 200 is embedded such that the head 204 of each fastener may extend partially over the bottom plate 122. For example, in some embodiments, each head 204 of the fastener may extend approximately 2 millimeters above the bottom plate 122. The fastener may comprise any suitable material, such as one or more of stainless steel, titanium (Ti), or the like.

In some embodiments, the electrostatic chuck 110 can include a deposition ring 206 disposed adjacent the ceramic plate 120 and covering an exposed portion of at least some of the bottom plates 122, as shown in FIG. As shown in FIG. 2, a slit 201 exists between the ceramic plate 120 and the deposition ring 206. However, the slit 201 can be optional, and in some embodiments, the deposition ring 206 can contact the ceramic plate 120. The deposition ring 206 may include one or more of alumina (Al ₂ O ₃ ), tantalum carbide (SiC), stainless steel, titanium (Ti), or the like. The deposition ring 206 can protect exposed portions of the bottom plate 122, fasteners 200, or the like from damage or prevent deposition of material onto such surfaces during substrate processing. For example, plasma damage can include an electric arc or the like.

As shown in FIG. 2, the deposition ring 206 can have a surface profile that is generally flat and that will be below the level of the substrate 101 when disposed at a processing location of the processing surface 128 of the electrostatic chuck 110. Alternatively, (not shown), the deposition ring 206 can have a sloped profile, such as a thicker peripheral edge near the substrate 101 and a thinner peripheral edge near the bottom plate 122. For example, a slanted profile may reduce accumulation of contaminants, processing materials, or the like in the deposition ring 206. Additionally, the deposition ring 206 can include, for example, a feature 212 disposed at a lower surface of the deposition ring 206 to receive the head 204 of the fastener 200 such that a lower surface of the deposition ring 206 can contact the bottom plate 122. For example, special The component 212 can be a groove, or a plurality of recesses or slots for receiving the head 204 of the fastener 200.

In some embodiments, the deposition ring 206 can be secured to the bottom plate 122 by a plurality of fasteners 208. The fastener 208 can be, for example, a screw, a bolt, or the like, as shown in FIG. Similar to the fastener 200, each fastener 208 can be at least partially embedded in the surface through-hole of the deposition ring 206 through the counter bore opening 210. The fastener 208 can be shown in the ghosted view of Figure 2 to show that the fastener 208 can be placed at a similar radial length, but the fastener 208 is located compared to the position of the fastener 200 relative to the substrate support 100. Different radial positions. For example, fastener 208 can comprise any suitable material, such as one or more of stainless steel, titanium (Ti), or the like.

As in FIG. 2, a gas source (gas source 130 discussed below will be shown in FIG. 1) can be coupled to a plurality of trenches 124 through a central gas line 217. In some embodiments, the central gas line 217 can be coupled to the plurality of trenches 124 by a plurality of gas channels 219 disposed in the bottom plate 122. In some embodiments, the gas passage 219 is formed on the upper surface of the bottom plate 122 and is covered by the lower surface of the ceramic plate 120. Alternatively, the gas passage 219 (not shown) may be disposed on the ceramic plate 120, the bottom plate 122, or a combination thereof. In some embodiments, (not shown) there may be about four gas passages 219, each of which originates from electrostatic chuck 110 and is adjacent to central gas line 217. In some embodiments, each gas channel 219 can be coupled to a respective trench 124 through a porous receptacle 211. For example, the porous receptacle 211 can comprise any suitable porous ceramic material such as aluminum nitride (AlN), alumina (Al ₂ O ₃ ), polyetheretherketone (PEEK), VESPEL®, or the like. The porous receptacle 211 can also be used to provide a gas to the trench 124 at a desired flow rate, for example, as in limiting or preventing the density or flow rate of the gas arc due to proximity to the electrode 126, the electrode 126 can operate At high frequencies and/or power as discussed below.

Additionally, it is preferred to provide a porous receptacle 211 interposed between each gas passage 219 and each of the grooves 124 (outer grooves 124), each groove 124 being disposed adjacent the central gas line 217. In such an embodiment, the two socket structures can be used to more easily insert the porous socket 211 while also maintaining the internal volume 106 separately from the processing volume 108. For example, the porous socket 211 can be inserted through the opening 221 in the bottom plate 122 and the second socket 223 including the O-ring 224 (disposed around the second socket 223) can be inserted behind the socket 211 to seal the opening 221. The porous receptacle 211 is disposed through the opening 221 and may (optionally) include an O-ring (e.g., an O-ring 225) disposed adjacent the porous receptacle to secure the porous receptacle to the ceramic plate 120. Additionally, in some embodiments (not shown), each of the multi-hole receptacles 211 can abut a plurality of apertures that are disposed in fluid communication with the base of the trenches 124 and through each of the multi-hole receptacles 211. The trench 124 is coupled to the gas channel 219. The plurality of holes may be smaller than the diameter of each of the porous receptacles 211 to prevent each of the porous receptacles 211 from entering the trenches 124. Further, when an O-ring, such as an O-ring 225, is used, a groove (not shown) may be formed on the outer surface of the socket 211 to accommodate the O-ring 225.

In some embodiments, the central gas line 217 can be pressed against the backside surface of the bottom plate 122 using a spring loading mechanism. For example, as shown in FIG. 2, the spring 226 may be disposed adjacent the exterior of the center gas line 217. spring The 226 can be operated in a high tension manner to press the O-ring 228 disposed at the end of the center gas line 217 against the back side surface of the bottom plate 122 to form the gas line 217 between the seals and the back side surface of the bottom plate 122. The spring 226 can compress the clamp 123 at the lower end of the spring 226 to provide the necessary tension to press the O-ring 228 against the backside surface of the bottom plate 122, as shown in FIG.

The case where a plurality of trenches 124 are disposed on the processing surface 128 of the electrostatic chuck 110 is illustrated in FIG. 3 in accordance with some embodiments of the present invention. For example, a plurality of trenches 124 as discussed above can be used to provide a gas to the back side of substrate 101. For example, gas can be used to promote uniform heat transfer between the ceramic plate 120 and the substrate 101. Additionally, the pressure at the grooves 124 can be monitored, for example, by a pressure transducer or any suitable pressure sensing device. For example, a pressure drop at trench 124 may result in a signal that substrate 101 is damaged, such as, for example, cracking or the like. Due to the pressure drop, the deposition process in the chamber can be closed to prevent the electrostatic chuck 110 from being exposed to the processing environment.

In some embodiments, the plurality of trenches 124 can include a plurality of circular trenches 302, a plurality of radial trenches 304, and a plurality of offset trenches 306, as shown in FIG. For example, in some embodiments, the plurality of circular grooves 302 may be concentric and coupled together in fluid communication through a plurality of offset grooves 306. A plurality of radial grooves 304 may be coupled in fluid communication and disposed inside the innermost circular groove and outside of the outermost circular groove. However, such a design is merely exemplary, and other configurations are possible. For example, in some embodiments, the radial grooves extend discontinuously from the interior of the ceramic plate 120 to the peripheral edge of the ceramic plate 120. In some embodiments, the radial grooves do not extend between a set of circular grooves, or do not extend longer than any suitable limit The length of the plasma arc of the trench 124. For example, high power or high frequency arcs may be generated in long, continuous radial grooves. Thus, in some embodiments, a plurality of offset trenches 306 are utilized to limit the length of the radial trenches 304. For example, if long, continuous radial grooves are used, high power and/or high frequency arcs may be generated by the gas flowing through the grooves. In some embodiments, the length of the radial and/or offset grooves 304, 306 can range from about 2 to about 5 centimeters. However, other lengths can be utilized.

4A-B illustrate a plurality of electrodes 126 in accordance with some embodiments of the present invention. For example, as with the plurality of electrodes 126 discussed above, the electrodes 126 can be used to secure the substrate 101 to the processing surface 128 of the electrostatic chuck 110. For example, in some embodiments, the plurality of electrodes 126 arranged in Figures 4A-B can be used to manipulate the clamping force of the electrostatic chuck 110 to clamp the arcuate substrate, or the like. During the removal of the clamp force, for example, gas may still flow through the grooves 124 and/or the pressure in the grooves is higher than the pressure in the process volume 108. Therefore, for example, in order to prevent the substrate 101 from suddenly closing the electrostatic chuck 110, some of the electrodes 126 may be turned off before the other electrodes gradually remove the clamp force from the substrate 101. For example, a larger substrate, such as 400 mm or larger, may be arcuate during the clamping process. Therefore, in order to planarize the arcuate substrate against the electrostatic chuck 110, some of the electrodes 126 may operate at higher power and/or frequency while other electrodes 126 are used to planarize the substrate.

As shown in FIG. 4A, the plurality of electrodes 126 may be arranged in a concentric pattern in which a plurality of external electrodes 404 are disposed adjacent to the plurality of internal electrodes 402. For example, as shown in FIG. 4A, each quadrant of the ceramic plate 120 includes an outer electrode 404 that is radially outward from the inner electrode. Settings. However, any suitable number of inner and outer electrodes 402, 404 can be utilized. Furthermore, the polarity of the respective adjacent electrodes can be controlled to be opposite to each other such that two adjacent electrodes have different polarities.

As shown in FIG. 4B, a plurality of electrodes 126 may be arranged in a radial pattern adjacent the ceramic plate 120, with each electrode occupying a region 406 between the center and the peripheral edge of the ceramic plate 120, ceramic Plate 120 is defined by a radial angle 408. For example, as shown in FIG. 4B, in some embodiments, it is possible to occupy eight electrodes 126 of eight regions 406, with each region 406 being defined by the same radial angle 408. Furthermore, the polarity of the respective adjacent electrodes can be controlled to be opposite to each other such that two adjacent electrodes have different polarities.

Returning to Figure 1, the substrate support 100 can include a feedthrough structure 111 to provide a means, for example, to provide gas to a plurality of trenches 124, to provide electrical power to a plurality of electrodes 126, or to provide analogs from external sources to the processing chamber. room. For example, as shown in FIG. 1, gas source 130 and power sources 131, 132 can be coupled to a plurality of trenches 124 and a plurality of electrodes 126 through feedthrough structure 111, respectively. For example, the power sources 131, 132 (not shown) may be a plurality of power sources, for example, such that each power source can be coupled to each of the electrodes 126 such that each electrode 126 can be independently controlled. For example, power source 132 can be utilized to provide RF power at a frequency ranging from about 13.56 MHz to about 100 MHz. In some embodiments, the frequency can be about 60 MHz. For example, the power source 131 can be used to provide DC power, for example, to unload the clamp force or clamp the substrate 101. For example, gas source 130 can be coupled to a plurality of trenches 124 through central gas line 217, as shown in FIG.

Optionally, the substrate holder 100 can include a cooling plate 134 that is disposed within the interior volume 106 below the bottom plate 122 of the electrostatic chuck 110. For example, as shown in FIG. 1, the cooling plate 134 may be a surface that directly contacts the interior volume that faces the bottom plate 122. However, the cooling plate 134 in this embodiment is merely exemplary and the cooling plate may not directly contact the bottom plate 122. Cooling plate 134 may include a plurality of cooling passages (not shown) for circulating coolant through cooling plate 134. For example, the coolant can include any suitable liquid or gas coolant. The coolant may be supplied to the cooling plate 134 through the coolant source 136, and the coolant source 136 is coupled to the cooling plate 134 through the feedthrough structure 111. Although shown as occupying a small portion of the body 104, in some embodiments, the cooling plate 134 can extend toward the feedthrough structure 111 to occupy a major portion of the interior volume 106 and/or the exterior volume 113. The cooling plate 134 can have a region that is substantially similar to the substrate 101, as shown in FIG. Therefore, the cooling plate 134 may be in all fields capable of providing cooling to substantially the substrate 101.

In operation, moving the substrate holder from the loading position to the processing position, the lift mechanism 138 can engage the feedthrough structure 111 such that the feedthrough structure 111 raises the substrate support 100 to the processing position. The riser pin 103 can remain stationary as the substrate holder 100 is raised toward the substrate 101, and the substrate 101 is placed on the riser pin 103, as shown in FIG.

The foregoing description is directed to the embodiments of the present invention, and further and further embodiments of the present invention can be made without departing from the scope of the invention.

100‧‧‧Substrate support

102‧‧‧ chamber wall

101‧‧‧Substrate

103‧‧‧Upselling

105‧‧‧Upper

107‧‧‧Upper pin hole

109‧‧‧Upper pin hole

106‧‧‧ internal volume

104‧‧‧ Subject

110‧‧‧Electrostatic fixture

108‧‧‧Processing volume

113‧‧‧External volume

111‧‧‧Feedback structure

114‧‧‧lower opening

112‧‧‧ Bellows

118‧‧‧ openings

115‧‧‧O-ring

117‧‧‧Flange

119‧‧‧Outer wall/O-ring

123‧‧‧Retainer

121‧‧‧ inner wall

122‧‧‧floor

120‧‧‧Ceramic plates

128‧‧‧Processing surface

124‧‧‧ trench

132‧‧‧Power source

126‧‧‧electrode

136‧‧‧ coolant source

Claims (20)

An electrostatic chuck for fixing a substrate, the electrostatic chuck comprising: a bottom plate; a ceramic plate supported by the bottom plate, the ceramic plate having a substrate bearing surface; a body coupled to the body The bottom plate forms a closed cavity below the bottom plate, wherein the closed cavity includes a radially inner hollow volume and a radially outer hollow volume, wherein the radially inner hollow volume is sealed and not fluidly coupled to the a substrate support surface, wherein the radially outer hollow volume is fluidly coupled to the substrate support surface; a plurality of first electrodes, the electrodes are disposed in the ceramic plate and the electrodes have a first polarity; And a plurality of second electrodes, the plurality of second electrodes are disposed in the ceramic plate, and the plurality of second electrodes have a second polarity, the second polarity being opposite to the first polarity, wherein the plurality of Each of the first electrode and the plurality of second electrodes is coupled to an RF power source and a DC power source to independently control each of the electrodes to provide a desired fixture power And frequency. The electrostatic chuck of claim 1, wherein the plurality of first electrodes and the plurality of second electrodes are disposed in a concentric pattern such that the plurality of first electrodes and the plurality of second electrodes comprise A plurality of external electrodes disposed adjacent to the plurality of internal electrodes. The electrostatic chuck of claim 1, wherein the plurality of first electrodes and the plurality of second electrodes are disposed in four quadrants of the ceramic plate, and wherein each quadrant of the ceramic plate comprises an external electrode The external electrode is disposed radially outward of an internal electrode. The electrostatic chuck of claim 3, wherein one of the adjacent electrodes has a polarity opposite to that of the other electrodes such that the two adjacent electrodes do not have the same polarity. The electrostatic chuck of claim 1, wherein the plurality of first electrodes and the plurality of second electrodes are alternately arranged in a radial pattern in the vicinity of the ceramic plate such that the two adjacent electrodes do not have the same polarity. The electrostatic chuck of claim 5, wherein the plurality of first electrodes and the plurality of second electrodes comprise a total of eight electrodes, and wherein each of the electrodes occupies a region, the region being interposed between the ceramic plates The center and a peripheral edge of the ceramic plate are defined by an identical radial angle. The electrostatic chuck of claim 1, wherein each of the plurality of first electrodes and each of the plurality of second electrodes are independently controllable. The electrostatic chuck of claim 1, wherein the external volume is coupled to the substrate support surface via one or more rising pin holes. The electrostatic chuck of claim 1, further comprising: a gas line pressing the gas line against a back side surface of the bottom plate using a spring. The electrostatic chuck of claim 1, wherein the inner volume and the outer volume are separated by an inner wall disposed in the cavity below the bottom plate of the electrostatic chuck. The electrostatic chuck of claim 1, wherein a cooling plate is at least partially disposed at the static The internal volume below the bottom plate of the electrical clamp and the outer volume. An electrostatic chuck for fixing a substrate, the electrostatic chuck comprising: a bottom plate; a ceramic plate supported by the bottom plate, the ceramic plate having a substrate bearing surface; at least one electrode, the at least one electrode Provided in the ceramic plate; and a plurality of grooves formed in the surface of the substrate holder of the ceramic plate, wherein the plurality of grooves comprise one or more concentric circular grooves One or more radial grooves, and one or more non-radial offset grooves, wherein the one or more concentric circular grooves are disposed concentrically around a central axis of the ceramic plate The one or more radial grooves are fluidly coupled to the one or more concentric circular grooves, the one or more non-radial offset grooves being fluidly coupled to the one or a further concentric circular groove, wherein each of the one or more non-radial offset grooves is a linear groove, wherein each of the one or more non-radial offset grooves is selected a length to limit the arc, and wherein the one or more paths Garnered a continuous groove extending from the interior of the ceramic plate to a peripheral edge of the ceramic plate. The electrostatic chuck of claim 12, wherein the one or more concentric circular grooves comprise a plurality of concentric circular grooves that pass through the one or more non-radial sulcus The slots are fluidly coupled to each other. The electrostatic chuck of claim 13 wherein the plurality of concentric circular grooves comprise an innermost circular groove and an outermost circular groove. The electrostatic chuck of claim 14, wherein the one or more non-radial offset grooves comprise four Non-radial offset trenches, the four non-radial offset trenches being evenly spaced from one another, each non-radial offset trench fluidly coupling the innermost circular trench to the outermost layer Circular groove. The electrostatic chuck of claim 14 wherein the one or more radial grooves comprise a plurality of radial grooves, wherein at least one of the plurality of radial grooves is fluidly coupled to one of the most An inner diameter of the inner circular groove extending toward a center of the ceramic plate, and at least one of the plurality of radial grooves is fluidly coupled to an outer diameter of an outermost circular groove, And extending toward a peripheral edge of the ceramic plate. The electrostatic chuck of claim 12, wherein the one or more radial grooves and the one or more non-radial offset grooves are sized to generate a plasma arc limitation through the flow Waiting for a plurality of grooves in a gas. The electrostatic chuck of claim 17, wherein the one or more radial grooves and the one or more non-radial offset grooves have a length of from about 2 cm to about 5 cm. The electrostatic chuck of claim 12, further comprising: a set of gas passages disposed on the bottom plate or at least one of the ceramic plates, the set of gas passages being configured to provide a gas to the A plurality of trenches, wherein each of the plurality of gas channels is coupled to one of the plurality of the plurality of trenches through a porous socket. A device for processing a substrate, the device comprising: a chamber defining a processing region; An electrostatic chuck for fixing a substrate in the processing region, the electrostatic chuck comprising: a bottom plate; a ceramic plate supported by the bottom plate, the ceramic plate having a substrate bearing surface; a plurality of first electrodes, the plurality of first electrodes are disposed in the ceramic plate, and the plurality of first electrodes have a first polarity; and a plurality of second electrodes, the plurality of second electrodes are disposed on The plurality of second electrodes in the ceramic plate and having a second polarity opposite to the first polarity, wherein the plurality of first electrodes and the plurality of second electrodes are independently controlled Providing a desired clamp force power and frequency; and a plurality of grooves formed in the substrate support surface of the ceramic plate, wherein the plurality of grooves comprise one or more concentricities a circular groove, one or more radial grooves, and one or more non-radial offset grooves, wherein the one or more concentric circular grooves surround a central axis of the ceramic plate, The one or more The one or more concentric circular trenches are fluidly coupled to the trench, the one or more non-radial offset trenches being fluidly coupled to the one or more concentric circular trenches Wherein each of the one or more non-radial offset trenches is a linear trench, wherein a length of each of the one or more non-radial offset trenches is selected to limit arcing, and wherein The one or more radial grooves are not continuously extended from an interior of the ceramic plate to a peripheral edge of the ceramic plate; and a plurality of power sources each coupled to a respective one of the plurality of electrodes This allows each electrode to be independently controlled.