TWI581192B - Fingerprint identification unit and device - Google Patents

Fingerprint identification unit and device Download PDF

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TWI581192B
TWI581192B TW103142567A TW103142567A TWI581192B TW I581192 B TWI581192 B TW I581192B TW 103142567 A TW103142567 A TW 103142567A TW 103142567 A TW103142567 A TW 103142567A TW I581192 B TWI581192 B TW I581192B
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layer
electrode layer
fingerprint identification
transparent conductive
fingerprint
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TW103142567A
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TW201629841A (en
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王娟
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麥克思股份有限公司
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指紋辨識元件及指紋辨識裝置 Fingerprint identification component and fingerprint identification device

本發明涉及一種指紋辨識元件及指紋辨識裝置。 The invention relates to a fingerprint identification component and a fingerprint identification device.

指紋辨識裝置以廣泛地應用於工業、國防、消防、電子等不同領域。一種典型的物質波式感測元件為超音波感測器,其由基板、形成在基板上的壓電元件以及形成在壓電元件上的電極構成。然而,在製作所述指紋辨識裝置時,所述指紋辨識裝置中基板、壓電元件以及電極貼合後容易產生顆粒或氣泡等不良狀況,但很難檢測到所述顆粒或氣泡,致使所述指紋辨識裝置的生產良率不高。 The fingerprint identification device is widely used in various fields such as industry, national defense, fire protection, and electronics. A typical matter wave sensing element is an ultrasonic sensor composed of a substrate, a piezoelectric element formed on the substrate, and an electrode formed on the piezoelectric element. However, when the fingerprint recognition device is manufactured, the substrate, the piezoelectric element, and the electrode in the fingerprint recognition device are prone to generate defects such as particles or bubbles after bonding, but it is difficult to detect the particles or bubbles, so that the The production yield of the fingerprint identification device is not high.

鑑於此,有必要提供一種指紋辨識元件。所述指紋辨識元件包括第一電極層、訊號接收層、基板、第二電極層、訊號發送層以及第三電極層。所述第一電極層與訊號接收層設置於所述基板的一側。所述第二電極層、訊號發送層以及第三電極層設置於所述基板相對的另一側。所述訊號發送層與訊號接收層為壓電材料層。所述第一電極層、第二電極層以及第三電極層至少之一為透明導電層。 In view of this, it is necessary to provide a fingerprint recognition component. The fingerprint identification component includes a first electrode layer, a signal receiving layer, a substrate, a second electrode layer, a signal transmitting layer, and a third electrode layer. The first electrode layer and the signal receiving layer are disposed on one side of the substrate. The second electrode layer, the signal transmitting layer and the third electrode layer are disposed on opposite sides of the substrate. The signal transmitting layer and the signal receiving layer are piezoelectric material layers. At least one of the first electrode layer, the second electrode layer, and the third electrode layer is a transparent conductive layer.

還有必要提供一種指紋辨識裝置,所述指紋辨識裝置包括所述指紋辨識元件以及連接墊。所述連接墊與所述指紋辨識元件電性連 接並將所述指紋辨識元件連接至外部電路。 It is also necessary to provide a fingerprint recognition device that includes the fingerprint recognition component and a connection pad. The connection pad is electrically connected to the fingerprint identification component The fingerprint identification component is connected to an external circuit.

相較於習知技術,本發明所提供的指紋辨識元件及指紋辨識裝置能夠在組裝好後藉由目視或影像檢測的方式檢測到所述指紋辨識元件及指紋辨識裝置中是否存在顆粒或氣泡等不良狀況,從而提升所述指紋辨識元件及指紋辨識裝置的良率。 Compared with the prior art, the fingerprint identification component and the fingerprint identification device provided by the present invention can detect whether particles or bubbles are present in the fingerprint identification component and the fingerprint identification device by visual or image detection after assembly. A bad condition, thereby improving the yield of the fingerprint identification component and the fingerprint recognition device.

200、300、400、500、600‧‧‧指紋辨識裝置 200, 300, 400, 500, 600‧‧‧ fingerprint identification device

210、310、410、510、610‧‧‧指紋辨識單元 210, 310, 410, 510, 610‧ ‧ fingerprint identification unit

220、320、420、520、620‧‧‧連接墊 220, 320, 420, 520, 620‧‧‧ connection pads

211、311、411、511、611‧‧‧第一電極層 211, 311, 411, 511, 611‧‧‧ first electrode layer

212、312、412、512、612‧‧‧訊號接收層 212, 312, 412, 512, 612‧‧‧ signal receiving layer

213、313、413、513、613‧‧‧第一膠體層 213, 313, 413, 513, 613‧‧‧ first colloidal layer

214、314、414、514、614‧‧‧基板 214, 314, 414, 514, 614‧‧‧ substrates

215、315、415、515、615‧‧‧第二膠體層 215, 315, 415, 515, 615‧‧‧ second colloid layer

216、316、416、516、616‧‧‧第二電極層 216, 316, 416, 516, 616‧‧‧ second electrode layer

217、317、417、517、617‧‧‧訊號發送層 217, 317, 417, 517, 617‧‧‧ signal transmission layer

218、318、418、518、618‧‧‧第三電極層 218, 318, 418, 518, 618‧‧‧ third electrode layer

214a、314a、414a、514a、614a‧‧‧薄膜電晶體陣列 214a, 314a, 414a, 514a, 614a‧‧‧ Thin film transistor array

圖1係本發明第一實施方式所提供的指紋辨識裝置的俯視圖。 1 is a plan view of a fingerprint identification device according to a first embodiment of the present invention.

圖2係本發明第一實施方式所提供的指紋辨識元件的分解示意圖。 2 is an exploded perspective view of a fingerprint recognition component according to a first embodiment of the present invention.

圖3係沿圖1中III-III切割線所做的剖面示意圖。 Figure 3 is a schematic cross-sectional view taken along line III-III of Figure 1.

圖4係本發明第二實施方式所提供的指紋辨識裝置的俯視圖。 4 is a plan view of a fingerprint recognition device according to a second embodiment of the present invention.

圖5係本發明第二實施方式所提供的指紋辨識元件的分解示意圖。 FIG. 5 is an exploded perspective view of a fingerprint identification component according to a second embodiment of the present invention.

圖6係沿圖4中VI-VI切割線所做的剖面示意圖。 Figure 6 is a schematic cross-sectional view taken along line VI-VI of Figure 4.

圖7係本發明第三實施方式所提供的指紋辨識裝置的俯視圖。 Fig. 7 is a plan view showing a fingerprint recognition device according to a third embodiment of the present invention.

圖8係本發明第三實施方式所提供的指紋辨識元件的分解示意圖。 FIG. 8 is an exploded perspective view of a fingerprint recognition component according to a third embodiment of the present invention.

圖9係沿圖7中IX-IX切割線所做的剖面示意圖。 Figure 9 is a schematic cross-sectional view taken along line IX-IX of Figure 7.

圖10係本發明第四實施方式所提供的指紋辨識裝置的俯視圖。 Fig. 10 is a plan view showing a fingerprint recognition device according to a fourth embodiment of the present invention.

圖11係本發明第四實施方式所提供的指紋辨識元件的分解示意圖。 11 is an exploded perspective view of a fingerprint recognition element according to a fourth embodiment of the present invention.

圖12係沿圖10中XII-XII切割線所做的剖面示意圖。 Figure 12 is a schematic cross-sectional view taken along line XII-XII of Figure 10.

圖13係本發明第五實施方式所提供的指紋辨識裝置的俯視圖。 Figure 13 is a plan view of a fingerprint recognition device according to a fifth embodiment of the present invention.

圖14係本發明第五實施方式所提供的指紋辨識元件的分解示意圖。 FIG. 14 is an exploded perspective view of a fingerprint recognition component according to a fifth embodiment of the present invention.

圖15係沿圖13中XV-XV切割線所做的剖面示意圖。 Figure 15 is a schematic cross-sectional view taken along line XV-XV of Figure 13.

下面結合附圖將對本發明實施方式作進一步的詳細說明。 The embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

請參閱圖1,為本發明第一實施方式所提供的指紋辨識裝置200的俯視圖。所述指紋辨識裝置200包括指紋辨識元件210以及連接墊220。所述連接墊220與所述指紋辨識元件210電性連接。所述指紋辨識元件210用於辨識放置在所述指紋辨識元件210之上的指紋。所述連接墊220用於將所述指紋辨識元件210連接至外部電路。 Please refer to FIG. 1 , which is a top view of a fingerprint identification device 200 according to a first embodiment of the present invention. The fingerprint recognition device 200 includes a fingerprint recognition component 210 and a connection pad 220. The connection pad 220 is electrically connected to the fingerprint recognition component 210. The fingerprint recognition component 210 is for recognizing a fingerprint placed on the fingerprint recognition component 210. The connection pad 220 is used to connect the fingerprint recognition component 210 to an external circuit.

圖2為所述指紋辨識元件210的分解示意圖,圖3為沿圖1中III-III切割線所做的剖面示意圖。請一併參閱圖2與圖3,所述指紋辨識元件210包括依次層疊的第一電極層211、訊號接收層212、第一膠體層213、基板214、第二膠體層215、第二電極層216、訊號發送層217以及第三電極層218。所述訊號接收層212藉由所述第一膠體層213粘貼在所述基板214的一側。所述第二電極層216藉由所述第二膠體層215粘貼在所述基板214相對的另一側。所述基板214包括薄膜電晶體陣列214a。 2 is an exploded perspective view of the fingerprint identification component 210, and FIG. 3 is a cross-sectional view taken along line III-III of FIG. Referring to FIG. 2 and FIG. 3 together, the fingerprint identification component 210 includes a first electrode layer 211, a signal receiving layer 212, a first colloid layer 213, a substrate 214, a second colloid layer 215, and a second electrode layer. 216. The signal transmitting layer 217 and the third electrode layer 218. The signal receiving layer 212 is pasted on one side of the substrate 214 by the first colloid layer 213. The second electrode layer 216 is pasted on the opposite side of the substrate 214 by the second colloid layer 215. The substrate 214 includes a thin film transistor array 214a.

所述第二電極層216與所述第三電極層218設置在所述訊號發送層217的上下兩側。所述訊號發送層217為壓電材料層。在本實施方式中,所述訊號發送層217的材質為聚二氟亞乙烯 (Polyvinylidene Fluoride,PVDF)。所述第二電極層216與所述第三電極層218用於對所述訊號發送層217施加電壓。所述訊號發送層217在所述第二電極層216與第三電極層218共同施加電壓時產生振動從而發出音波。在本實施方式中,所述發出的音波為超音波。 The second electrode layer 216 and the third electrode layer 218 are disposed on upper and lower sides of the signal transmitting layer 217. The signal transmitting layer 217 is a piezoelectric material layer. In this embodiment, the signal transmission layer 217 is made of polydifluoroethylene (Polyvinylidene Fluoride, PVDF). The second electrode layer 216 and the third electrode layer 218 are used to apply a voltage to the signal transmitting layer 217. The signal transmitting layer 217 generates vibration when a voltage is applied by the second electrode layer 216 and the third electrode layer 218 to emit a sound wave. In the present embodiment, the emitted sound wave is an ultrasonic wave.

所述第一電極層211形成在所述訊號接收層212上。所述訊號接收層212為壓電材料層。在本實施方式中,所述訊號接收層212的材質為聚二氟亞乙烯(Polyvinylidene Fluoride,PVDF)。所述訊號接收層212用於接收被放置在所述指紋辨識元件210之上的手指反射回的音波,並將所述音波轉化為電訊號。所述第一電極層211用於將所述電訊號傳遞至所述薄膜電晶體陣列214a。 The first electrode layer 211 is formed on the signal receiving layer 212. The signal receiving layer 212 is a layer of piezoelectric material. In this embodiment, the material of the signal receiving layer 212 is Polyvinylidene Fluoride (PVDF). The signal receiving layer 212 is configured to receive a sound wave reflected by a finger placed on the fingerprint recognition component 210 and convert the sound wave into an electrical signal. The first electrode layer 211 is configured to transfer the electrical signal to the thin film transistor array 214a.

所述薄膜電晶體陣列214a用於接收所述第一電極層211所傳導的電訊號,並將所述電訊號轉化成指紋的灰度圖像。 The thin film transistor array 214a is configured to receive the electrical signal transmitted by the first electrode layer 211 and convert the electrical signal into a grayscale image of the fingerprint.

在所述指紋辨識元件210工作時,所述第二電極層216與所述第三電極層218對所述訊號發送層217施加電壓,所述訊號發送層217在電壓的作用下產生振動從而發出超音波。當手指放置在所述指紋辨識元件210上面時,所述超音波被手指反射至所述訊號接收層212,受手指指紋上凹與脊的形狀影響,被反射的超音波發生相應的變化,所述訊號接收層212將接收到的超音波轉化為電訊號,並將所述電訊號傳遞至所述薄膜電晶體陣列214a,所述藉由所述薄膜電晶體陣列214a將所述電訊號轉化為指紋的灰度圖像,從而獲得指紋。 When the fingerprint identifying component 210 is in operation, the second electrode layer 216 and the third electrode layer 218 apply a voltage to the signal transmitting layer 217, and the signal transmitting layer 217 generates vibration by a voltage to emit Ultrasonic. When a finger is placed on the fingerprint recognition component 210, the ultrasonic wave is reflected by the finger to the signal receiving layer 212, and is affected by the shape of the finger fingerprint and the shape of the ridge, and the reflected ultrasonic wave changes correspondingly. The signal receiving layer 212 converts the received ultrasonic wave into an electrical signal and transmits the electrical signal to the thin film transistor array 214a, and the electrical signal is converted into the optical signal by the thin film transistor array 214a. A grayscale image of the fingerprint to obtain a fingerprint.

在本實施方式中,所述第一電極層211為透明導電層。具體地,所述第一電極層211的材質為單層透明導電材料或多層複合透明 導電材料。所述單層透明導電材料包括但不限於氧化銦錫(Indium Tin Oxide,ITO)、氧化鋅(ZnO)、聚乙撐二氧噻吩(PEDOT)、碳納米管(CNT)、銀納米線(AgNW)以及石墨烯。所述多層複合透明導電材料包括但不限於由依次層疊的氧化銦錫、銀、氧化銦錫組成的三層複合結構導電材料。所述第一電極層211塗布於所述訊號接收層212上。所述第二電極層216與第三電極層218的材質為不透明導電材料,如銀。所述第二電極層216與第三電極層218分別塗布於所述訊號發送層217的兩側。 In the embodiment, the first electrode layer 211 is a transparent conductive layer. Specifically, the material of the first electrode layer 211 is a single layer transparent conductive material or a multilayer composite transparent Conductive material. The single-layer transparent conductive material includes, but is not limited to, Indium Tin Oxide (ITO), zinc oxide (ZnO), polyethylene dioxythiophene (PEDOT), carbon nanotubes (CNT), and silver nanowires (AgNW). ) and graphene. The multilayer composite transparent conductive material includes, but is not limited to, a three-layer composite structure conductive material composed of indium tin oxide, silver, indium tin oxide which are sequentially laminated. The first electrode layer 211 is coated on the signal receiving layer 212. The material of the second electrode layer 216 and the third electrode layer 218 is an opaque conductive material such as silver. The second electrode layer 216 and the third electrode layer 218 are respectively coated on both sides of the signal transmitting layer 217.

由於所述第一電極層211是透明的,當所述指紋辨識元件210組裝好後,能夠藉由目視或影像檢測的方式從所述第一電極層211的一側檢測所述指紋辨識元件210中是否存在顆粒或氣泡等不良狀況,從而提升所述指紋辨識元件210與指紋辨識裝置200的良率。 Since the first electrode layer 211 is transparent, the fingerprint identification component 210 can be detected from one side of the first electrode layer 211 by visual or image detection after the fingerprint identification component 210 is assembled. Whether there are defects such as particles or bubbles in the middle, thereby improving the yield of the fingerprint recognition element 210 and the fingerprint recognition device 200.

在本實施方式中,所述第一電極層211的阻抗低於150歐姆,以使該第一電極層211具有更佳的傳導率。同時,所述第一電極層211的可見光穿透率介於10%至99%之間,以使得在檢測時能夠方便地觀察到所述指紋辨識元件210中是否存在顆粒或氣泡等不良狀況。優選地,所述第一電極層的可見光穿透率大於70%。 In the embodiment, the impedance of the first electrode layer 211 is lower than 150 ohms, so that the first electrode layer 211 has better conductivity. At the same time, the visible light transmittance of the first electrode layer 211 is between 10% and 99%, so that it is convenient to observe whether there are defects such as particles or bubbles in the fingerprint recognition element 210 at the time of detection. Preferably, the first electrode layer has a visible light transmittance of more than 70%.

請參閱圖4,為本發明第二實施方式所提供的指紋辨識裝置300的俯視圖。所述指紋辨識裝置300包括指紋辨識元件310以及連接墊320。所述連接墊320與所述指紋辨識元件310電性連接。所述指紋辨識元件310用於辨識放置在所述指紋辨識元件310之上的指紋。所述連接墊320用於將所述指紋辨識元件310連接至外部電路。 Please refer to FIG. 4 , which is a top view of a fingerprint identification device 300 according to a second embodiment of the present invention. The fingerprint identification device 300 includes a fingerprint recognition component 310 and a connection pad 320. The connection pad 320 is electrically connected to the fingerprint recognition component 310. The fingerprint recognition component 310 is for recognizing a fingerprint placed on the fingerprint recognition component 310. The connection pad 320 is used to connect the fingerprint recognition component 310 to an external circuit.

圖5為所述指紋辨識元件310的分解示意圖,圖6為沿圖4中VI-VI切割線所做的剖面示意圖。請一併參閱圖5與圖6,所述指紋辨識 元件310包括依次層疊的第一電極層311、訊號接收層312、第一膠體層313、基板314、第二膠體層315、第二電極層316、訊號發送層317以及第三電極層318。所述訊號接收層312藉由所述第一膠體層313粘貼在所述基板314的一側。所述第二電極層316藉由所述第二膠體層315粘貼在所述基板314相對的另一側。所述基板314包括薄膜電晶體陣列314a。 FIG. 5 is an exploded perspective view of the fingerprint identification component 310, and FIG. 6 is a cross-sectional view taken along line VI-VI of FIG. Please refer to FIG. 5 and FIG. 6 together for fingerprint identification. The element 310 includes a first electrode layer 311, a signal receiving layer 312, a first colloid layer 313, a substrate 314, a second colloid layer 315, a second electrode layer 316, a signal transmitting layer 317, and a third electrode layer 318 which are sequentially stacked. The signal receiving layer 312 is pasted on one side of the substrate 314 by the first colloid layer 313. The second electrode layer 316 is pasted on the opposite side of the substrate 314 by the second colloid layer 315. The substrate 314 includes a thin film transistor array 314a.

所述第二電極層316與所述第三電極層318設置在所述訊號發送層317的上下兩側。所述訊號發送層317為壓電材料層。在本實施方式中,所述訊號發送層317的材質為聚二氟亞乙烯(Polyvinylidene Fluoride,PVDF)。所述第二電極層316與所述第三電極層318用於對所述訊號發送層317施加電壓。所述訊號發送層317在所述第二電極層316與第三電極層318共同施加電壓時產生振動從而發出音波。在本實施方式中,所述發出的音波為超音波。 The second electrode layer 316 and the third electrode layer 318 are disposed on upper and lower sides of the signal transmitting layer 317. The signal transmitting layer 317 is a piezoelectric material layer. In the embodiment, the signal transmission layer 317 is made of polyvinylidene fluoride (PVDF). The second electrode layer 316 and the third electrode layer 318 are used to apply a voltage to the signal transmitting layer 317. The signal transmitting layer 317 generates a vibration when a voltage is applied by the second electrode layer 316 and the third electrode layer 318 to emit a sound wave. In the present embodiment, the emitted sound wave is an ultrasonic wave.

所述第一電極層311形成在所述訊號接收層312上。所述訊號接收層312為壓電材料層。在本實施方式中,所述訊號接收層312的材質為聚二氟亞乙烯(Polyvinylidene Fluoride,PVDF)。所述訊號接收層312用於接收被放置在所述指紋辨識元件310之上的手指反射回的音波,並將所述音波轉化為電訊號。所述第一電極層311用於將所述電訊號傳遞至所述薄膜電晶體陣列314a。 The first electrode layer 311 is formed on the signal receiving layer 312. The signal receiving layer 312 is a layer of piezoelectric material. In the embodiment, the signal receiving layer 312 is made of polyvinylidene fluoride (PVDF). The signal receiving layer 312 is configured to receive the sound waves reflected by the fingers placed on the fingerprint recognition component 310 and convert the sound waves into electrical signals. The first electrode layer 311 is configured to transfer the electrical signal to the thin film transistor array 314a.

所述薄膜電晶體陣列314a用於接收所述第一電極層311所傳導的電訊號,並將所述電訊號轉化成指紋的灰度圖像。 The thin film transistor array 314a is configured to receive the electrical signal transmitted by the first electrode layer 311 and convert the electrical signal into a grayscale image of the fingerprint.

在所述指紋辨識元件310工作時,所述第二電極層316與所述第三電極層318對所述訊號發送層317施加電壓,所述訊號發送層317 在電壓的作用下產生振動從而發出超音波。當手指放置在所述指紋辨識元件310上面時,所述超音波被手指反射至所述訊號接收層312,受手指指紋上凹與脊的形狀影響,被反射的超音波發生相應的變化,所述訊號接收層312將接收到的超音波轉化為電訊號,並將所述電訊號傳遞至所述薄膜電晶體陣列314a,所述藉由所述薄膜電晶體陣列214a將所述電訊號轉化為指紋的灰度圖像,從而獲得指紋。 When the fingerprint identification component 310 is in operation, the second electrode layer 316 and the third electrode layer 318 apply a voltage to the signal transmission layer 317, and the signal transmission layer 317 The vibration is generated by the voltage to emit ultrasonic waves. When a finger is placed on the fingerprint recognition component 310, the ultrasonic wave is reflected by the finger to the signal receiving layer 312, and is affected by the shape of the finger fingerprint and the shape of the ridge, and the reflected ultrasonic wave changes correspondingly. The signal receiving layer 312 converts the received ultrasonic wave into an electrical signal and transmits the electrical signal to the thin film transistor array 314a, and the electrical signal is converted into the electrical signal by the thin film transistor array 214a. A grayscale image of the fingerprint to obtain a fingerprint.

在本實施方式中,所述第一電極層311的材質為不透明導電材料,如銀。所述第一電極層311塗布於所述訊號接收層312上。所述第二電極層316與第三電極層318為透明導電層。具體地,所述第二電極層316與第三電極層318的材質為單層透明導電材料或多層複合透明導電材料。所述單層透明導電材料包括但不限於氧化銦錫(Indium Tin Oxide,ITO)、氧化鋅(ZnO)、聚乙撐二氧噻吩(PEDOT)、碳納米管(CNT)、銀納米線(AgNW)以及石墨烯。所述多層複合透明導電材料包括但不限於由依次層疊的氧化銦錫、銀、氧化銦錫組成的三層複合結構導電材料。所述第二電極層316與第三電極層318分別塗布於所述訊號發送層317的兩側。 In this embodiment, the material of the first electrode layer 311 is an opaque conductive material such as silver. The first electrode layer 311 is coated on the signal receiving layer 312. The second electrode layer 316 and the third electrode layer 318 are transparent conductive layers. Specifically, the material of the second electrode layer 316 and the third electrode layer 318 is a single layer transparent conductive material or a multilayer composite transparent conductive material. The single-layer transparent conductive material includes, but is not limited to, Indium Tin Oxide (ITO), zinc oxide (ZnO), polyethylene dioxythiophene (PEDOT), carbon nanotubes (CNT), and silver nanowires (AgNW). ) and graphene. The multilayer composite transparent conductive material includes, but is not limited to, a three-layer composite structure conductive material composed of indium tin oxide, silver, indium tin oxide which are sequentially laminated. The second electrode layer 316 and the third electrode layer 318 are respectively coated on both sides of the signal transmitting layer 317.

由於所述第二電極層316與第三電極層318是透明的,當所述指紋辨識元件310組裝好後,能夠藉由目視或影像檢測的方式從所述第三電極層318的一側檢測所述指紋辨識元件310中是否存在顆粒或氣泡等不良狀況,從而提升所述指紋辨識元件310與指紋辨識裝置300的良率。 Since the second electrode layer 316 and the third electrode layer 318 are transparent, when the fingerprint identification component 310 is assembled, it can be detected from one side of the third electrode layer 318 by visual or image detection. Whether there is a defect such as particles or bubbles in the fingerprint recognition component 310 improves the yield of the fingerprint recognition component 310 and the fingerprint recognition device 300.

在本實施方式中,所述第二電極層316與第三電極層318的阻抗均低於150歐姆,以使該第二電極層316與第三電極層318具有更佳 的傳導率。。同時,所述第二電極層316與第三電極層318的可見光穿透率均介於10%至99%之間,以使得在檢測時能夠方便地觀察到所述指紋辨識元件310中是否存在顆粒或氣泡等不良狀況。優選地,所述第二電極層316與第三電極層318的可見光穿透率大於70%。 In this embodiment, the impedances of the second electrode layer 316 and the third electrode layer 318 are both lower than 150 ohms, so that the second electrode layer 316 and the third electrode layer 318 are better. Conductivity. . At the same time, the visible light transmittances of the second electrode layer 316 and the third electrode layer 318 are between 10% and 99%, so that the presence or absence of the fingerprint identification component 310 can be conveniently observed during the detection. Bad conditions such as particles or bubbles. Preferably, the second electrode layer 316 and the third electrode layer 318 have a visible light transmittance of more than 70%.

請參閱圖7,為本發明第三實施方式所提供的指紋辨識裝置400的俯視圖。所述指紋辨識裝置400包括指紋辨識元件410以及連接墊420。所述連接墊420與所述指紋辨識元件410電性連接。所述指紋辨識元件410用於辨識放置在所述指紋辨識元件410之上的指紋。所述連接墊420用於將所述指紋辨識元件410連接至外部電路。 Please refer to FIG. 7 , which is a top view of a fingerprint identification device 400 according to a third embodiment of the present invention. The fingerprint recognition device 400 includes a fingerprint recognition component 410 and a connection pad 420. The connection pad 420 is electrically connected to the fingerprint recognition component 410. The fingerprint recognition component 410 is for recognizing a fingerprint placed over the fingerprint recognition component 410. The connection pad 420 is used to connect the fingerprint recognition component 410 to an external circuit.

圖8為所述指紋辨識元件410的分解示意圖,圖9為沿圖7中IX-IX切割線所做的剖面示意圖。請一併參閱圖8與圖9,所述指紋辨識元件,410包括依次層疊的第一電極層411、訊號接收層412、第一膠體層413、基板414、第二膠體層415、第二電極層416、訊號發送層417以及第三電極層418。所述訊號接收層412藉由所述第一膠體層413粘貼在所述基板414的一側。所述第二電極層416藉由所述第二膠體層415粘貼在所述基板414相對的另一側。所述基板414包括薄膜電晶體陣列414a。 FIG. 8 is an exploded perspective view of the fingerprint identification component 410, and FIG. 9 is a cross-sectional view taken along line IX-IX of FIG. Referring to FIG. 8 and FIG. 9 together, the fingerprint identification component 410 includes a first electrode layer 411, a signal receiving layer 412, a first colloid layer 413, a substrate 414, a second colloid layer 415, and a second electrode which are sequentially stacked. Layer 416, signal transmitting layer 417, and third electrode layer 418. The signal receiving layer 412 is pasted on one side of the substrate 414 by the first colloid layer 413. The second electrode layer 416 is adhered to the opposite side of the substrate 414 by the second colloid layer 415. The substrate 414 includes a thin film transistor array 414a.

所述第二電極層416與所述第三電極層418設置在所述訊號發送層417的上下兩側。所述訊號發送層417為壓電材料層。在本實施方式中,所述訊號發送層417的材質為聚二氟亞乙烯(Polyvinylidene Fluoride,PVDF)。所述第二電極層416與所述第三電極層418用於對所述訊號發送層417施加電壓。所述訊號發送層417在所述第二電極層416與第三電極層418共同施加電壓時 產生振動從而發出音波。在本實施方式中,所述發出的音波為超音波。 The second electrode layer 416 and the third electrode layer 418 are disposed on upper and lower sides of the signal transmitting layer 417. The signal transmitting layer 417 is a piezoelectric material layer. In the embodiment, the signal transmission layer 417 is made of polyvinylidene fluoride (PVDF). The second electrode layer 416 and the third electrode layer 418 are used to apply a voltage to the signal transmitting layer 417. The signal transmitting layer 417 is when the second electrode layer 416 and the third electrode layer 418 are applied with a voltage Vibration is generated to emit sound waves. In the present embodiment, the emitted sound wave is an ultrasonic wave.

所述第一電極層411形成在所述訊號接收層412上。所述訊號接收層412為壓電材料層。在本實施方式中,所述訊號接收層412的材質為聚二氟亞乙烯(Polyvinylidene Fluoride,PVDF)。所述訊號接收層412用於接收被放置在所述指紋辨識元件410之上的手指反射回的音波,並將所述音波轉化為電訊號。所述第一電極層411用於將所述電訊號傳遞至所述薄膜電晶體陣列414a。 The first electrode layer 411 is formed on the signal receiving layer 412. The signal receiving layer 412 is a layer of piezoelectric material. In the embodiment, the signal receiving layer 412 is made of polyvinylidene fluoride (PVDF). The signal receiving layer 412 is configured to receive a sound wave reflected by a finger placed on the fingerprint recognition component 410 and convert the sound wave into an electrical signal. The first electrode layer 411 is used to transfer the electrical signal to the thin film transistor array 414a.

所述薄膜電晶體陣列414a用於接收所述第一電極層411所傳導的電訊號,並將所述電訊號轉化成指紋的灰度圖像。 The thin film transistor array 414a is configured to receive the electrical signal transmitted by the first electrode layer 411 and convert the electrical signal into a grayscale image of the fingerprint.

在所述指紋辨識元件410工作時,所述第二電極層416與所述第三電極層418對所述訊號發送層417施加電壓,所述訊號發送層417在電壓的作用下產生振動從而發出超音波。當手指放置在所述指紋辨識元件410上面時,所述超音波被手指反射至所述訊號接收層412,受手指指紋上凹與脊的形狀影響,被反射的超音波發生相應的變化,所述訊號接收層412將接收到的超音波轉化為電訊號,並將所述電訊號傳遞至所述薄膜電晶體陣列414a,所述藉由所述薄膜電晶體陣列414a將所述電訊號轉化為指紋的灰度圖像,從而獲得指紋。 When the fingerprint identification component 410 is in operation, the second electrode layer 416 and the third electrode layer 418 apply a voltage to the signal transmitting layer 417, and the signal transmitting layer 417 generates vibration by the voltage to emit Ultrasonic. When a finger is placed on the fingerprint recognition component 410, the ultrasonic wave is reflected by the finger to the signal receiving layer 412, and is affected by the shape of the finger fingerprint and the shape of the ridge, and the reflected ultrasonic wave changes correspondingly. The signal receiving layer 412 converts the received ultrasonic wave into an electrical signal and transmits the electrical signal to the thin film transistor array 414a, and the electrical signal is converted into the optical signal by the thin film transistor array 414a. A grayscale image of the fingerprint to obtain a fingerprint.

在本實施方式中,所述第一電極層411、第二電極層416以及第三電極層418為透明導電層。具體地,所述第一電極層411、第二電極層416以及第三電極層418的材質為單層透明導電材料或多層複合透明導電材料。所述單層透明導電材料包括但不限於氧化銦錫(Indium Tin Oxide,ITO)、氧化鋅(ZnO)、聚乙撐二氧噻吩 (PEDOT)、碳納米管(CNT)、銀納米線(AgNW)以及石墨烯。所述多層複合透明導電材料包括但不限於由依次層疊的氧化銦錫、銀、氧化銦錫組成的三層複合結構導電材料。所述第一電極層411塗布於所述訊號接收層412上。所述第二電極層416與第三電極層418分別塗布於所述訊號發送層417的兩側。 In the embodiment, the first electrode layer 411, the second electrode layer 416, and the third electrode layer 418 are transparent conductive layers. Specifically, the material of the first electrode layer 411, the second electrode layer 416, and the third electrode layer 418 is a single layer transparent conductive material or a multilayer composite transparent conductive material. The single-layer transparent conductive material includes, but is not limited to, Indium Tin Oxide (ITO), zinc oxide (ZnO), and polyethylene dioxythiophene. (PEDOT), carbon nanotubes (CNT), silver nanowires (AgNW), and graphene. The multilayer composite transparent conductive material includes, but is not limited to, a three-layer composite structure conductive material composed of indium tin oxide, silver, indium tin oxide which are sequentially laminated. The first electrode layer 411 is coated on the signal receiving layer 412. The second electrode layer 416 and the third electrode layer 418 are respectively coated on both sides of the signal transmitting layer 417.

由於所述第一電極層411、第二電極層416以及第三電極層418是透明的,當所述指紋辨識元件410組裝好後,能夠藉由目視或影像檢測的方式從所述第一電極層411的一側以及所述第三電極層418的一側檢測所述指紋辨識元件410中是否存在顆粒或氣泡等不良狀況,從而提升所述指紋辨識元件410與指紋辨識裝置400的良率。 Since the first electrode layer 411, the second electrode layer 416, and the third electrode layer 418 are transparent, when the fingerprint identification component 410 is assembled, it can be visually or image-detected from the first electrode. One side of the layer 411 and one side of the third electrode layer 418 detect whether there is a defect such as particles or bubbles in the fingerprint recognition element 410, thereby improving the yield of the fingerprint recognition element 410 and the fingerprint identification device 400.

在本實施方式中,所述第一電極層411、第二電極層416以及第三電極層418的阻抗均低於150歐姆,以使該第一電極層411、第二電極層416以及第三電極層418具有更佳的傳導率。同時,所述第一電極層411、第二電極層416以及第三電極層418的可見光穿透率均介於10%至99%之間,以使得在檢測時能夠方便地觀察到所述指紋辨識元件410中是否存在顆粒或氣泡等不良狀況。優選地,所述第一電極層411、第二電極層416以及第三電極層418的可見光穿透率大於70%。 In this embodiment, the impedances of the first electrode layer 411, the second electrode layer 416, and the third electrode layer 418 are all lower than 150 ohms, so that the first electrode layer 411, the second electrode layer 416, and the third Electrode layer 418 has a better conductivity. Meanwhile, the visible light transmittances of the first electrode layer 411, the second electrode layer 416, and the third electrode layer 418 are both between 10% and 99%, so that the fingerprint can be conveniently observed during detection. Whether or not there is a problem such as particles or bubbles in the identification member 410. Preferably, the visible light transmittance of the first electrode layer 411, the second electrode layer 416, and the third electrode layer 418 is greater than 70%.

請參閱圖10,為本發明第四實施方式所提供的指紋辨識裝置500的俯視圖。所述指紋辨識裝置500包括指紋辨識元件510以及連接墊520。所述連接墊520與所述指紋辨識元件510電性連接。所述指紋辨識元件510用於辨識放置在所述指紋辨識元件510之上的指紋。所述連接墊520用於將所述指紋辨識元件510連接至外部電路 。 Please refer to FIG. 10 , which is a top view of a fingerprint identification device 500 according to a fourth embodiment of the present invention. The fingerprint recognition device 500 includes a fingerprint recognition component 510 and a connection pad 520. The connection pad 520 is electrically connected to the fingerprint recognition component 510. The fingerprint recognition component 510 is for recognizing a fingerprint placed over the fingerprint recognition component 510. The connection pad 520 is used to connect the fingerprint recognition component 510 to an external circuit .

圖11為所述指紋辨識元件510的分解示意圖,圖12為沿圖10中XII-XII切割線所做的剖面示意圖。請一併參閱圖11與圖12,所述指紋辨識元件510包括依次層疊的第一電極層511、訊號接收層512、第一膠體層513、基板514、第二膠體層515、第二電極層516、訊號發送層517以及第三電極層518。所述訊號接收層512藉由所述第一膠體層513粘貼在所述基板514的一側。所述第二電極層516藉由所述第二膠體層515粘貼在所述基板514相對的另一側。所述基板514包括薄膜電晶體陣列514a。 11 is an exploded perspective view of the fingerprint identification component 510, and FIG. 12 is a cross-sectional view taken along line XII-XII of FIG. Referring to FIG. 11 and FIG. 12 together, the fingerprint identification component 510 includes a first electrode layer 511, a signal receiving layer 512, a first colloid layer 513, a substrate 514, a second colloid layer 515, and a second electrode layer. 516, the signal transmitting layer 517 and the third electrode layer 518. The signal receiving layer 512 is pasted on one side of the substrate 514 by the first colloid layer 513. The second electrode layer 516 is pasted on the opposite side of the substrate 514 by the second colloid layer 515. The substrate 514 includes a thin film transistor array 514a.

所述第二電極層516與所述第三電極層518設置在所述訊號發送層517的上下兩側。所述訊號發送層517為壓電材料層。在本實施方式中,所述訊號發送層517的材質為聚二氟亞乙烯(Polyvinylidene Fluoride,PVDF)。所述第二電極層516與所述第三電極層518用於對所述訊號發送層517施加電壓。所述訊號發送層517在所述第二電極層516與第三電極層518共同施加電壓時產生振動從而發出音波。在本實施方式中,所述發出的音波為超音波。 The second electrode layer 516 and the third electrode layer 518 are disposed on upper and lower sides of the signal transmitting layer 517. The signal transmitting layer 517 is a piezoelectric material layer. In the embodiment, the signal transmission layer 517 is made of polyvinylidene fluoride (PVDF). The second electrode layer 516 and the third electrode layer 518 are used to apply a voltage to the signal transmitting layer 517. The signal transmitting layer 517 generates a vibration when a voltage is applied by the second electrode layer 516 and the third electrode layer 518 to emit a sound wave. In the present embodiment, the emitted sound wave is an ultrasonic wave.

所述第一電極層511形成在所述訊號接收層512上。所述訊號接收層512為壓電材料層。在本實施方式中,所述訊號接收層512的材質為聚二氟亞乙烯(Polyvinylidene Fluoride,PVDF)。所述訊號接收層512用於接收被放置在所述指紋辨識元件510之上的手指反射回的音波,並將所述音波轉化為電訊號。所述第一電極層511用於將所述電訊號傳遞至所述薄膜電晶體陣列514a。 The first electrode layer 511 is formed on the signal receiving layer 512. The signal receiving layer 512 is a layer of piezoelectric material. In the embodiment, the signal receiving layer 512 is made of polyvinylidene fluoride (PVDF). The signal receiving layer 512 is configured to receive a sound wave reflected by a finger placed on the fingerprint recognition component 510 and convert the sound wave into an electrical signal. The first electrode layer 511 is configured to transfer the electrical signal to the thin film transistor array 514a.

所述薄膜電晶體陣列514a用於接收所述第一電極層511所傳導的 電訊號,並將所述電訊號轉化成指紋的灰度圖像。 The thin film transistor array 514a is configured to receive the conduction of the first electrode layer 511 The electrical signal and convert the electrical signal into a grayscale image of the fingerprint.

在所述指紋辨識元件510工作時,所述第二電極層516與所述第三電極層518對所述訊號發送層517施加電壓,所述訊號發送層517在電壓的作用下產生振動從而發出超音波。當手指放置在所述指紋辨識元件510上面時,所述超音波被手指反射至所述訊號接收層512,受手指指紋上凹與脊的形狀影響,被反射的超音波發生相應的變化,所述訊號接收層512將接收到的超音波轉化為電訊號,並將所述電訊號傳遞至所述薄膜電晶體陣列514a,所述藉由所述薄膜電晶體陣列514a將所述電訊號轉化為指紋的灰度圖像,從而獲得指紋。 When the fingerprint identification component 510 is in operation, the second electrode layer 516 and the third electrode layer 518 apply a voltage to the signal transmitting layer 517, and the signal transmitting layer 517 generates vibration by the voltage to emit Ultrasonic. When a finger is placed on the fingerprint recognition component 510, the ultrasonic wave is reflected by the finger to the signal receiving layer 512, and is affected by the shape of the finger fingerprint and the shape of the ridge, and the reflected ultrasonic wave changes correspondingly. The signal receiving layer 512 converts the received ultrasonic wave into an electrical signal and transmits the electrical signal to the thin film transistor array 514a, and the electrical signal is converted into the electrical signal by the thin film transistor array 514a. A grayscale image of the fingerprint to obtain a fingerprint.

在本實施方式中,所述第一電極層511與第二電極層516的材質為不透明導電材料,如銀。所述第一電極層511塗布於所述訊號接收層512上。所述第三電極層518為透明導電層。具體地,所述第三電極層518的材質為單層透明導電材料或多層複合透明導電材料。所述單層透明導電材料包括但不限於氧化銦錫(Indium Tin Oxide,ITO)、氧化鋅(ZnO)、聚乙撐二氧噻吩(PEDOT)、碳納米管(CNT)、銀納米線(AgNW)以及石墨烯。所述多層複合透明導電材料包括但不限於由依次層疊的氧化銦錫、銀、氧化銦錫組成的三層複合結構導電材料。所述第二電極層516與第三電極層518分別塗布於所述訊號發送層517的兩側。其中,所述第二電極層516設置於所述訊號發送層517靠近基板514的一側,所述第三電極層518設置於所述訊號發送層518遠離基板514的一側。 In this embodiment, the material of the first electrode layer 511 and the second electrode layer 516 is an opaque conductive material such as silver. The first electrode layer 511 is coated on the signal receiving layer 512. The third electrode layer 518 is a transparent conductive layer. Specifically, the material of the third electrode layer 518 is a single layer transparent conductive material or a multilayer composite transparent conductive material. The single-layer transparent conductive material includes, but is not limited to, Indium Tin Oxide (ITO), zinc oxide (ZnO), polyethylene dioxythiophene (PEDOT), carbon nanotubes (CNT), and silver nanowires (AgNW). ) and graphene. The multilayer composite transparent conductive material includes, but is not limited to, a three-layer composite structure conductive material composed of indium tin oxide, silver, indium tin oxide which are sequentially laminated. The second electrode layer 516 and the third electrode layer 518 are respectively coated on both sides of the signal transmitting layer 517. The second electrode layer 516 is disposed on a side of the signal transmitting layer 517 near the substrate 514, and the third electrode layer 518 is disposed on a side of the signal transmitting layer 518 away from the substrate 514.

由於所述第三電極層518是透明的,當所述指紋辨識元件510組裝好後,能夠藉由目視或影像檢測的方式從所述第三電極層518的 一側檢測所述指紋辨識元件510中從第三電極層518至第二電極層516之間是否存在顆粒或氣泡等不良狀況,從而提升所述指紋辨識元件510與指紋辨識裝置500的良率。 Since the third electrode layer 518 is transparent, when the fingerprint identification component 510 is assembled, it can be visually or image-detected from the third electrode layer 518. One side detects whether there is a problem such as particles or bubbles between the third electrode layer 518 and the second electrode layer 516 in the fingerprint recognition element 510, thereby improving the yield of the fingerprint identification element 510 and the fingerprint identification device 500.

在本實施方式中,所述第三電極層518的阻抗低於150歐姆,以使該第三電極層518具有更佳的傳導率。同時,所述第三電極層518的可見光穿透率介於10%至99%之間,以使得在檢測時能夠方便地觀察到所述指紋辨識元件510中是否存在顆粒或氣泡等不良狀況。優選地,所述第三電極層518的可見光穿透率大於70%。 In the present embodiment, the impedance of the third electrode layer 518 is less than 150 ohms to make the third electrode layer 518 have better conductivity. At the same time, the visible light transmittance of the third electrode layer 518 is between 10% and 99%, so that it is convenient to observe whether there are defects such as particles or bubbles in the fingerprint recognition element 510 at the time of detection. Preferably, the third electrode layer 518 has a visible light transmittance greater than 70%.

請參閱圖13,為本發明第五實施方式所提供的指紋辨識裝置600的俯視圖。所述指紋辨識裝置600包括指紋辨識元件610以及連接墊620。所述連接墊620與所述指紋辨識元件610電性連接。所述指紋辨識元件610用於辨識放置在所述指紋辨識元件610之上的指紋。所述連接墊620用於將所述指紋辨識元件610連接至外部電路。 Please refer to FIG. 13 , which is a top view of a fingerprint identification device 600 according to a fifth embodiment of the present invention. The fingerprint recognition device 600 includes a fingerprint recognition component 610 and a connection pad 620. The connection pad 620 is electrically connected to the fingerprint recognition component 610. The fingerprint recognition component 610 is for recognizing a fingerprint placed over the fingerprint recognition component 610. The connection pad 620 is used to connect the fingerprint recognition component 610 to an external circuit.

圖14為所述指紋辨識元件610的分解示意圖,圖15為沿圖13中XV-XV切割線所做的剖面示意圖。請一併參閱圖14與圖15,所述指紋辨識元件610包括依次層疊的第一電極層611、訊號接收層612、第一膠體層613、基板614、第二膠體層615、第二電極層616、訊號發送層617以及第三電極層618。所述訊號接收層612藉由所述第一膠體層613粘貼在所述基板614的一側。所述第二電極層616藉由所述第二膠體層615粘貼在所述基板614相對的另一側。所述基板614包括薄膜電晶體陣列614a。 FIG. 14 is an exploded perspective view of the fingerprint identification component 610, and FIG. 15 is a cross-sectional view taken along line XV-XV of FIG. Referring to FIG. 14 and FIG. 15 together, the fingerprint identification component 610 includes a first electrode layer 611, a signal receiving layer 612, a first colloid layer 613, a substrate 614, a second colloid layer 615, and a second electrode layer. 616, the signal transmitting layer 617 and the third electrode layer 618. The signal receiving layer 612 is pasted on one side of the substrate 614 by the first colloid layer 613. The second electrode layer 616 is pasted on the opposite side of the substrate 614 by the second colloid layer 615. The substrate 614 includes a thin film transistor array 614a.

所述第二電極層616與所述第三電極層618設置在所述訊號發送層617的上下兩側。所述訊號發送層617為壓電材料層。在本實施方 式中,所述訊號發送層617的材質為聚二氟亞乙烯(Polyvinylidene Fluoride,PVDF)。所述第二電極層616與所述第三電極層618用於對所述訊號發送層617施加電壓。所述訊號發送層617在所述第二電極層616與第三電極層618共同施加電壓時產生振動從而發出音波。在本實施方式中,所述發出的音波為超音波。 The second electrode layer 616 and the third electrode layer 618 are disposed on upper and lower sides of the signal transmitting layer 617. The signal transmitting layer 617 is a piezoelectric material layer. In this embodiment In the formula, the signal transmitting layer 617 is made of polyvinylidene fluoride (PVDF). The second electrode layer 616 and the third electrode layer 618 are used to apply a voltage to the signal transmitting layer 617. The signal transmitting layer 617 generates vibration when a voltage is applied by the second electrode layer 616 and the third electrode layer 618 to emit a sound wave. In the present embodiment, the emitted sound wave is an ultrasonic wave.

所述第一電極層611形成在所述訊號接收層612上。所述訊號接收層612為壓電材料層。在本實施方式中,所述訊號接收層612的材質為聚二氟亞乙烯(Polyvinylidene Fluoride,PVDF)。所述訊號接收層612用於接收被放置在所述指紋辨識元件610之上的手指反射回的音波,並將所述音波轉化為電訊號。所述第一電極層611用於將所述電訊號傳遞至所述薄膜電晶體陣列614a。 The first electrode layer 611 is formed on the signal receiving layer 612. The signal receiving layer 612 is a layer of piezoelectric material. In the embodiment, the signal receiving layer 612 is made of polyvinylidene fluoride (PVDF). The signal receiving layer 612 is configured to receive a sound wave reflected by a finger placed on the fingerprint recognition component 610 and convert the sound wave into an electrical signal. The first electrode layer 611 is configured to transfer the electrical signal to the thin film transistor array 614a.

所述薄膜電晶體陣列614a用於接收所述第一電極層611所傳導的電訊號,並將所述電訊號轉化成指紋的灰度圖像。 The thin film transistor array 614a is configured to receive the electrical signal transmitted by the first electrode layer 611 and convert the electrical signal into a grayscale image of the fingerprint.

在所述指紋辨識元件610工作時,所述第二電極層616與所述第三電極層618對所述訊號發送層617施加電壓,所述訊號發送層617在電壓的作用下產生振動從而發出超音波。當手指放置在所述指紋辨識元件610上面時,所述超音波被手指反射至所述訊號接收層612,受手指指紋上凹與脊的形狀影響,被反射的超音波發生相應的變化,所述訊號接收層612將接收到的超音波轉化為電訊號,並將所述電訊號傳遞至所述薄膜電晶體陣列614a,所述藉由所述薄膜電晶體陣列614a將所述電訊號轉化為指紋的灰度圖像,從而獲得指紋。 When the fingerprint identifying component 610 is in operation, the second electrode layer 616 and the third electrode layer 618 apply a voltage to the signal transmitting layer 617, and the signal transmitting layer 617 generates vibration by the voltage to emit Ultrasonic. When a finger is placed on the fingerprint recognition component 610, the ultrasonic wave is reflected by the finger to the signal receiving layer 612, and is affected by the shape of the finger fingerprint and the shape of the ridge, and the reflected ultrasonic wave changes correspondingly. The signal receiving layer 612 converts the received ultrasonic wave into an electrical signal and transmits the electrical signal to the thin film transistor array 614a, and the electrical signal is converted into the optical signal by the thin film transistor array 614a. A grayscale image of the fingerprint to obtain a fingerprint.

在本實施方式中,所述第一電極層611與第三電極層618為透明導 電層。具體地,所述第一電極層611與第三電極層618的材質為單層透明導電材料或多層複合透明導電材料。所述單層透明導電材料包括但不限於氧化銦錫(Indium Tin Oxide,ITO)、氧化鋅(ZnO)、聚乙撐二氧噻吩(PEDOT)、碳納米管(CNT)、銀納米線(AgNW)以及石墨烯。所述多層複合透明導電材料包括但不限於由依次層疊的氧化銦錫、銀、氧化銦錫組成的三層複合結構導電材料。所述第一電極層611塗布於所述訊號接收層612上。所述第二電極層616的材質為不透明導電材料,如銀。所述第三電極層618所述第二電極層616與第三電極層618分別塗布於所述訊號發送層617的兩側。其中,所述第二電極層616設置於所述訊號發送層617靠近基板614的一側,所述第三電極層618設置於所述訊號發送層618遠離基板614的一側。 In this embodiment, the first electrode layer 611 and the third electrode layer 618 are transparent guides. Electrical layer. Specifically, the material of the first electrode layer 611 and the third electrode layer 618 is a single layer transparent conductive material or a multilayer composite transparent conductive material. The single-layer transparent conductive material includes, but is not limited to, Indium Tin Oxide (ITO), zinc oxide (ZnO), polyethylene dioxythiophene (PEDOT), carbon nanotubes (CNT), and silver nanowires (AgNW). ) and graphene. The multilayer composite transparent conductive material includes, but is not limited to, a three-layer composite structure conductive material composed of indium tin oxide, silver, indium tin oxide which are sequentially laminated. The first electrode layer 611 is coated on the signal receiving layer 612. The material of the second electrode layer 616 is an opaque conductive material such as silver. The second electrode layer 616 and the third electrode layer 618 are respectively applied to both sides of the signal transmitting layer 617. The second electrode layer 616 is disposed on a side of the signal transmitting layer 617 near the substrate 614, and the third electrode layer 618 is disposed on a side of the signal transmitting layer 618 away from the substrate 614.

由於所述第一電極層611與第三電極層618是透明的,當所述指紋辨識元件610組裝好後,能夠藉由目視或影像檢測的方式從所述第一電極層611的一側以及所述第三電極層618的一側檢測所述指紋辨識元件610中是否存在顆粒或氣泡等不良狀況,從而提升所述指紋辨識元件610與指紋辨識裝置600的良率。 Since the first electrode layer 611 and the third electrode layer 618 are transparent, when the fingerprint identification component 610 is assembled, it can be visually or image-detected from one side of the first electrode layer 611 and One side of the third electrode layer 618 detects whether there is a defect such as particles or bubbles in the fingerprint recognition component 610, thereby improving the yield of the fingerprint identification component 610 and the fingerprint identification device 600.

在本實施方式中,所述第一電極層611與第三電極層618的阻抗低於150歐姆,以使該第一電極層611與第三電極層618具有更佳的傳導率。同時,所述第一電極層611與第三電極層618的可見光穿透率介於10%至99%之間,以使得在檢測時能夠方便地觀察到所述指紋辨識元件210中是否存在顆粒或氣泡等不良狀況。優選地,所述第一電極層611與第三電極層618的可見光穿透率大於70%。 In the embodiment, the impedance of the first electrode layer 611 and the third electrode layer 618 is lower than 150 ohms, so that the first electrode layer 611 and the third electrode layer 618 have better conductivity. At the same time, the visible light transmittance of the first electrode layer 611 and the third electrode layer 618 is between 10% and 99%, so that the presence or absence of particles in the fingerprint recognition element 210 can be conveniently observed during detection. Or a bad condition such as a bubble. Preferably, the visible light transmittance of the first electrode layer 611 and the third electrode layer 618 is greater than 70%.

綜上所述,本創作符合發明專利要件,爰依法提出專利申請。惟 ,以上所述者僅為本創作之較佳實施例,本創作之範圍並不以上述實施例為限,舉凡熟習本案技藝之人士爰依本創作之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the creation meets the requirements of the invention patent, and the patent application is filed according to law. but The above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above embodiments, and any equivalent modification or change made by a person familiar with the skill of the present invention in accordance with the spirit of the present invention should be It is covered by the following patent application.

210‧‧‧指紋辨識單元 210‧‧‧Finger identification unit

211‧‧‧第一電極層 211‧‧‧First electrode layer

212‧‧‧訊號接收層 212‧‧‧Signal receiving layer

213‧‧‧第一膠體層 213‧‧‧First colloid layer

214‧‧‧基板 214‧‧‧Substrate

215‧‧‧第二膠體層 215‧‧‧Second colloid layer

216‧‧‧第二電極層 216‧‧‧Second electrode layer

217‧‧‧訊號發送層 217‧‧‧Signal transmission layer

218‧‧‧第三電極層 218‧‧‧ third electrode layer

214a‧‧‧薄膜電晶體陣列 214a‧‧‧Thin Film Array

Claims (15)

一種指紋辨識元件,所述指紋辨識元件包括第一電極層、訊號接收層、基板、第二電極層、訊號發送層以及第三電極層,所述第一電極層與訊號接收層設置於所述基板的一側,所述第二電極層、訊號發送層以及第三電極層設置於所述基板相對的另一側,所述訊號發送層與訊號接收層為壓電材料層,所述第一電極層、第二電極層以及第三電極層至少之一為透明導電層,訊號發送層位於第二電極與第三電極之間,第二電極與第三電極對所述訊號發送層施加電壓使其產生振動從而發出超音波。 a fingerprint identification component, the fingerprint identification component includes a first electrode layer, a signal receiving layer, a substrate, a second electrode layer, a signal transmitting layer, and a third electrode layer, wherein the first electrode layer and the signal receiving layer are disposed on the One side of the substrate, the second electrode layer, the signal transmitting layer and the third electrode layer are disposed on opposite sides of the substrate, and the signal transmitting layer and the signal receiving layer are piezoelectric material layers, the first At least one of the electrode layer, the second electrode layer and the third electrode layer is a transparent conductive layer, the signal transmitting layer is located between the second electrode and the third electrode, and the second electrode and the third electrode apply a voltage to the signal transmitting layer It generates vibrations to emit ultrasonic waves. 如請求項1所述的指紋辨識元件,其中,所述第二電極層設置於所述訊號發送層靠近基板的一側,所述第三電極層設置於所述訊號發送層遠離基板的一側,所述第三電極層為透明導電層。 The fingerprint identification component of claim 1, wherein the second electrode layer is disposed on a side of the signal transmitting layer adjacent to the substrate, and the third electrode layer is disposed on a side of the signal transmitting layer away from the substrate The third electrode layer is a transparent conductive layer. 如請求項2所述的指紋辨識元件,其中,所述第二電極層為透明導電層。 The fingerprint identification element of claim 2, wherein the second electrode layer is a transparent conductive layer. 如請求項2所述的指紋辨識元件,其中,所述第一電極層為透明導電層。 The fingerprint identification element of claim 2, wherein the first electrode layer is a transparent conductive layer. 如請求項4所述的指紋辨識元件,其中,所述第二電極層為透明導電層。 The fingerprint identification element of claim 4, wherein the second electrode layer is a transparent conductive layer. 如請求項1所述的指紋辨識元件,其中,所述第一電極層為透明導電層。 The fingerprint identification element of claim 1, wherein the first electrode layer is a transparent conductive layer. 如請求項1所述的指紋辨識元件,其中,所述透明導電層的材質為單層透明導電材料。 The fingerprint identification component of claim 1, wherein the transparent conductive layer is made of a single layer of transparent conductive material. 如請求項7所述的指紋辨識元件,其中,所述單層透明導電材料包括氧化銦錫、氧化鋅、聚乙撐二氧噻吩、碳納米管、銀納米線以及石墨烯。 The fingerprint identification element according to claim 7, wherein the single-layer transparent conductive material comprises indium tin oxide, zinc oxide, polyethylene dioxythiophene, carbon nanotubes, silver nanowires, and graphene. 如請求項1所述的指紋辨識元件,其中,所述透明導電層的材質為多層複合透明導電材料。 The fingerprint identification component of claim 1, wherein the transparent conductive layer is made of a multilayer composite transparent conductive material. 如請求項9所述的指紋辨識元件,其中,所述多層複合透明導電材料包括由依次層疊的氧化銦錫、銀、氧化銦錫組成的三層複合結構導電材料。 The fingerprint recognition element according to claim 9, wherein the multilayer composite transparent conductive material comprises a three-layer composite structure conductive material composed of indium tin oxide, silver, and indium tin oxide which are sequentially laminated. 如請求項1所述的指紋辨識元件,其中,所述訊號發送層與訊號接收層的材質為聚二氟亞乙烯。 The fingerprint identification component of claim 1, wherein the signal transmitting layer and the signal receiving layer are made of polydifluoroethylene. 如請求項1所述的指紋辨識元件,其中,所述基板包括薄膜電晶體陣列,薄膜晶體管陣列用於將電訊號轉化為指紋的灰度圖像。 The fingerprint identification component of claim 1, wherein the substrate comprises a thin film transistor array, and the thin film transistor array is configured to convert the electrical signal into a grayscale image of the fingerprint. 如請求項1所述的指紋辨識元件,其中,所述透明導電層的阻抗低於150歐姆。 The fingerprint recognition element of claim 1, wherein the transparent conductive layer has an impedance of less than 150 ohms. 如請求項1所述的指紋辨識元件,其中,所述透明導電層的可見光穿透率大於70%。 The fingerprint recognition element according to claim 1, wherein the transparent conductive layer has a visible light transmittance of more than 70%. 一種指紋辨識裝置,所述指紋辨識裝置包括如請求項1至14中任一項所述之指紋辨識元件以及連接墊,所述連接墊與所述指紋辨識元件電性連接並將所述指紋辨識元件連接至外部電路。 A fingerprint identification device, comprising the fingerprint identification component and the connection pad according to any one of claims 1 to 14, wherein the connection pad is electrically connected to the fingerprint identification component and the fingerprint is recognized The component is connected to an external circuit.
TW103142567A 2014-12-08 2014-12-08 Fingerprint identification unit and device TWI581192B (en)

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CN106778691B (en) * 2017-01-16 2020-04-21 业成科技(成都)有限公司 Acoustic wave type fingerprint identification device, manufacturing method thereof and electronic device applying acoustic wave type fingerprint identification device
CN112181208B (en) * 2020-10-30 2023-06-02 业泓科技(成都)有限公司 Touch control identification device, display device and manufacturing method thereof
CN112711150B (en) * 2020-12-22 2022-11-22 业泓科技(成都)有限公司 Display device

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CN102670241A (en) * 2011-03-17 2012-09-19 周正三 Active biological characteristic sensor and electronic equipment using same
US20130201134A1 (en) * 2012-02-02 2013-08-08 Ultra-Scan Corporation Ultrasonic Touch Sensor With A Display Monitor

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CN102670241A (en) * 2011-03-17 2012-09-19 周正三 Active biological characteristic sensor and electronic equipment using same
US20130201134A1 (en) * 2012-02-02 2013-08-08 Ultra-Scan Corporation Ultrasonic Touch Sensor With A Display Monitor

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