TWI580957B - A light-induced dielectrophoresis chip - Google Patents

Description

Light-induced dielectrophoresis wafer

More particularly, the present invention relates to a light-induced dielectrophoresis wafer, and more particularly to a transparent sensing wafer using photoinduced dielectrophoretic force.

Because traditional cancer analysis methods use diffusion and sedimentation to make antigen-antibody specific binding, and the usual detection reagents are at lower concentrations, so the detection must be shaken for more than two hours. Time, and the detection limit is generally only about 1 ng / ml, which is difficult for some patients with acute infections or early cancer, each of which is slow or the sensitivity of detection can not be achieved, it is difficult to fight for effective treatment of gold Time leads to many regrettable results; however, the use of light-induced dielectrophoretic force technology can help doctors detect early cancers in just a few minutes, and further understand the patient's cancer genetic factors for early development. Prevent.

In biochemical tests, the use of specific binding between molecules is often used. For example, patients with AIDS (Acquired immune deficiency syndrome) often detect the number of "helper T cells (TH)" and "toxic T cells (Tc)" in the body. The cells specifically express CD4 and CD8 protein molecules, so they can accurately capture these cells by using a monoclonal antibody with high affinity to CD4 or CD8. The fluorescent molecules are labeled, and after being measured, the number of helper T cells or poisonous T cells can be determined according to the intensity of the fluorescent signal. Some cancers must develop to a certain size and their tumor markers The substance can be detected, and even some cancers do not secrete tumor marker substances. Therefore, tumor markers may not be able to sensitively screen out the presence of cancer cells, and it is impossible to confirm which kind of cancer occurs. Therefore, the sensitivity and specificity of this method. (specialty) needs to be strengthened.

Another biochemical test method, "DR-70", is different from general tumor markers. The principle is to detect substances produced by human cells in response to the presence of cancer cells. When cancer cells start to enter the interstitial cells by carcinoma in situ, connective tissues of the human body produce Fibrinogen Degradation Product (FDP, fibrinogen cleavage product). If the cleavage product exceeds the normal value, it indicates that the body has progressed from the carcinoma in situ to the stage of invasion cancer. DR-70 can detect less than 106 cells in cancer cells, which is the current sensitive biochemical test, but this analysis will be affected by capsular plasmin infection, pneumonia, general acute infection, autoimmune disease, external trauma (truma< 30days), hemolysis during blood draw, pregnancy and other physiological conditions interfere. Therefore, it is important to develop non-invasive, high sensitivity, high specialty, real-time and inexpensive inspection tools.

The current detection technology, when the number of cancer cells in vivo development to about> ¹⁰⁶ (about 0.2cm tumor size), i.e., cancer cells can be transferred (Metastasis) through induction of angiogenesis (angiogenesis). When cancer cells develop to a tumor size of about 1 cm, it is possible to observe by instrument (general health check), but at this time it is impossible to completely control the development of cancer cells. In view of this, in order to detect cancer cells more accurately, quickly and instantly. It is necessary to develop inspection wafers that are inexpensive, low cost, fast and accurate. Especially in the early stage of cancer cell growth (cell density <5cells/μL), it can be detected, which can greatly increase the chance of cure.

There are two kinds of amorphous germanium and microcrystalline germanium in the thin film containing doping impurities. Amorphous germanium is a film formed on a glass or metal substrate by sputtering or chemical vapor deposition. The production method is mature and the material cost is also much cheaper than other compound semiconductor materials, but the disadvantage is that there is a problem of severe photodegradation (that is, the conversion efficiency is greatly reduced after being irradiated with UV). Microcrystalline silicon (nc-Si, also known as Microcrystalline Silicon, mc-Si); microcrystalline germanium is an improved material of amorphous germanium, the structure of which is between amorphous germanium and crystalline germanium, mainly in The amorphous crystal structure has minute crystal particles, and has the advantages of being easy to be thinned by amorphous germanium, having a low process, high electrical conductivity, low activation energy, wide crystal absorption spectrum, and low photodegradation effect. Conversion efficiency is also high.

In view of the above-mentioned problems of the prior art, it is a primary object of the present invention to provide a light-induced dielectrophoresis wafer for controlling and isolating cancer cells from normal cells.

In order to achieve the above-mentioned main purpose, the present invention provides a light-induced dielectrophoresis wafer comprising a first glass substrate, a first multilayer transparent conductive film, a microcrystalline germanium semiconductor layer, a second glass substrate, and a first The second multi-layer transparent conductive film, a first hole, a second hole and an AC signal source. The first glass substrate serves as a carrier body of the light-induced dielectrophoresis wafer. The first multilayer transparent conductive film is deposited on the first glass substrate by a physical vapor phase method. The microcrystalline germanium semiconductor layer is deposited on the first conductive substrate by a physical vapor phase method. The second glass substrate is disposed on the first conductive substrate. The second multilayer transparent conductive film is deposited under the second glass substrate by a physical vapor phase method. The first hole penetrates the second glass substrate and the second conductive substrate to allow a cancer cell to pass through the medium. The second hole penetrates the second glass substrate and the second conductive substrate to allow air to pass through the medium. And the source of the alternating current signal is electrically connected to the first conductive substrate and the second conductive substrate.

For the other purpose of the above, the first multilayer transparent conductive disclosed by the present invention The film further comprises a first zinc oxide aluminum-doped layer, a first metal thin film layer and a second zinc oxide aluminum-doped layer. The first zinc oxide aluminum-doped layer is deposited on the first glass substrate by a physical vapor phase method and has a thickness of about 600 nm. The first metal thin film layer is deposited on the first zinc oxide aluminum-doped layer by a physical vapor phase method, and has a thickness of about 5 nm to 10 nm. And the second zinc oxide aluminum-doped layer is deposited on the first metal thin film layer by a physical vapor phase method, and has a thickness of about 600 nm.

For the above other purposes, the second multilayer transparent conductive film disclosed in the present invention further comprises a third zinc oxide aluminum-doped layer, a second metal thin film layer and a fourth zinc oxide aluminum-doped layer. The third zinc oxide aluminum-doped layer is deposited on the bottom of the second glass substrate by a physical vapor phase method and has a thickness of 600 nm. The second metal thin film layer is deposited on the third zinc oxide aluminum-doped layer by a physical vapor phase method, and has a thickness of about 5 nm to 10 nm. And depositing the fourth zinc oxide aluminum-doped layer on the second metal thin film layer by a physical vapor phase method, the thickness of which is about 600 nm.

The above and other objects, features, and advantages of the present invention will become more apparent and understood.

100‧‧‧Light-induced dielectrophoresis wafer

110‧‧‧First glass substrate

120‧‧‧Second glass substrate

130‧‧‧Microcrystalline germanium semiconductor layer

140‧‧‧First hole

150‧‧‧Second hole

160‧‧‧Communication signal source

200‧‧‧First multilayer transparent conductive film

210‧‧‧First zinc oxide aluminum doped layer

220‧‧‧First metal film layer

230‧‧‧Second zinc oxide aluminum-doped layer

300‧‧‧Second multilayer transparent conductive film

310‧‧‧ Third zinc oxide aluminum layer

320‧‧‧Second metal film layer

330‧‧‧4th zinc oxide doped aluminum layer

Figure 1 shows a schematic view of the structure of a light-induced dielectrophoresis wafer.

Figure 2 is a schematic view showing the structure of the first conductive substrate.

Figure 3 is a schematic view showing the structure of the second conductive substrate.

The present invention may be embodied in various forms, and the embodiments shown in the drawings and the following description are preferred embodiments of the present invention. It is an exemplification of the invention and is not intended to limit the invention to the particular embodiments illustrated and/or described.

Please refer to the schematic diagram of the photo-induced dielectrophoresis wafer 100 of FIG. 1 , which includes a first glass substrate 110 , a first multilayer transparent conductive film 200 , a microcrystalline germanium semiconductor layer 130 , and a second The glass substrate 120, a second multilayer transparent conductive film 300, a first hole 140, a second hole 150, and an AC signal source 160. The first multilayer transparent conductive film 200 is deposited on the first glass substrate 110 by a physical vapor phase method. The microcrystalline germanium semiconductor layer 130 is deposited on the first multilayer transparent conductive film 200 by a chemical vapor phase method. The second glass substrate 120 is disposed on the first multilayer transparent conductive film 200. The second multilayer transparent conductive film 300 is deposited under the second glass substrate 120 by a physical vapor phase method. The first hole 140 extends through the second glass substrate 120 and the second multilayer transparent conductive film 300. The second hole 150 extends through the second glass substrate 120 and the second multilayer transparent conductive film 300. The AC signal source 160 is electrically connected to the first multilayer transparent conductive film 200 and the second multilayer transparent conductive film 300. It should be noted that the first hole 140 is used to allow cancer cells to pass through the medium. The second hole 150 is used to allow air to pass through the medium. The thickness of the microcrystalline germanium semiconductor layer 130 is 300 nm. The first multilayer transparent conductive film 200 has a thickness of between about 5 and 15 um. The second multilayer transparent conductive film 300 has a thickness of between about 5 and 15 um. The crystallite size of the microcrystalline germanium semiconductor layer 130 is between about 1-3 um.

Referring to FIG. 2, a schematic diagram of the structure of the first multilayer transparent conductive film 200 includes a first zinc oxide aluminum-doped layer 210, a first metal thin film layer 220, and a second zinc oxide aluminum-doped layer 230. . The first zinc oxide aluminum-doped layer 210 is deposited on the first glass substrate 110 by a physical vapor phase method. The first metal thin film layer 220 is deposited on the first oxygen by a physical vapor phase method The zinc is doped on the aluminum layer 210. The second zinc oxide aluminum-doped layer 230 is deposited on the first metal thin film layer 220 by a physical vapor phase method. It should be noted that the first zinc oxide aluminum doped layer 210 has a thickness of about 600 nm. The first metal thin film layer has a thickness of 220 between about 5 nm and 10 nm. The second zinc oxide aluminum doped layer 230 has a thickness of about 600 nm. The material of the first metal thin film layer 220 is gold (Au).

Referring to FIG. 3, a schematic diagram of the structure of the second multilayer transparent conductive film 300 includes a third zinc oxide aluminum-doped layer 310, a second metal thin film layer 320, and a fourth zinc oxide aluminum-doped layer 330. . The third zinc oxide aluminum-doped layer 310 is deposited on the bottom of the second glass substrate 120 by a physical vapor phase method. The second metal thin film layer 320 is deposited on the third zinc oxide aluminum-doped layer 310 by a physical vapor phase method. The fourth zinc oxide aluminum-doped layer 330 is deposited on the second metal thin film layer 320 by a physical vapor phase method. It should be noted that the third zinc oxide aluminum-doped layer 310 has a thickness of 600 nm; the second metal thin film layer 320 has a thickness of about 5 nm to 10 nm; and the fourth zinc oxide-doped aluminum layer 330 has a thickness of about 600nm. The material of the second metal thin film layer 320 is gold (Au).

In the process, in the process method, the first multilayer transparent conductive film 200 and the two-layer transparent conductive film 300 are respectively deposited on the first glass substrate 110 and the second glass substrate 120 (EAGLE XG of Corning) for oxidation Zinc (purity 99.99%, diameter 100mm, thickness 5mm) and metallic aluminum target (99.995% purity, diameter 100mm, thickness 5mm) are equipped with RF and DC power supplies in a coaxial magnetron sputtering deposition system. The glass substrate 120 of this size is 25 x 25 x 0.5 mm3. Sputtering was carried out at a pressure of 7.9 × 10 -3 torr in a pure argon air with a target to the bottom layer of a distance of 70 mm from a cryopump, plus a rotary pump associated with used to obtain 5.0 × 10 -3 torr, in the implementation of argon gas (99.99% Before purity). The substrate rotation speed is 2 revolutions per minute. The first glass substrate 110 and the second glass substrate 120 temperature measuring instrument are measured by a thermocouple and a thermal cathode meter. The temperature is controlled using feedback to control the heater. During the change, the first glass substrate 110 and the second glass The temperature of the glass substrate 120 is maintained at ±5 °C. The temperature of the first glass substrate 110 and the second glass substrate 120 is controlled within a range of 25 to 300 °C.

In operation, when a light-induced dielectrophoresis wafer 100 is projected from the top onto the first glass substrate 110 of the lower sheet, the brighter pattern projection area can induce more electrons. The hole pairs are separated, resulting in a region where the local electric field is strong, and thus a non-uniform electric field required for the dielectrophoretic force. Dynamic separation technology is one of the main advantages of light-induced dielectrophoresis. Just by making animations with computer graphics software, you can dynamically transform the graphics to achieve the strategy of transforming the strength of the electric field at any time. Continuous movement with a simple single rod, in which 2 μm and 10 μm latex particles are suspended in deionized water. When the applied alternating voltage is 40 Vp-p and the frequency is 10 kHz, the electric charge density is inversely proportional to the particle size. In the low frequency range (<100 kHz), the polarizability of 2 μm particles is higher than that of 10 μm, causing 2 μm particles to exhibit positive dielectrophoretic force; 10 μm particles exhibit negative dielectrophoretic force. Therefore, the portion projected by the beam exhibits a strong electric field strength, and 2 μm particles can be effectively concentrated on the light rod; 10 μm particles are repelled by the light rod and are far away. When the light bar is continuously moved to the right by the computer mouse, the 2 μm particles are continuously attracted into the light bar by positive dielectrophoresis, and the 10 μm particles are continuously pushed to the right by the negative dielectrophoretic force to achieve separation and simultaneous The effect of concentration.

While the present invention has been described in its preferred embodiments, it is not intended to limit the scope of the invention, and various modifications and changes can be made without departing from the spirit and scope of the invention. As explained above, various modifications and variations can be made without departing from the spirit of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100‧‧‧Light-induced dielectrophoresis wafer

110‧‧‧First glass substrate

120‧‧‧Second glass substrate

130‧‧‧Microcrystalline germanium semiconductor layer

140‧‧‧First hole

150‧‧‧Second hole

160‧‧‧Communication signal source

200‧‧‧First multilayer transparent conductive film

300‧‧‧Second multilayer transparent conductive film

Claims (8)

A light-induced dielectrophoresis wafer comprising: a first glass substrate as a carrier body of the light-induced dielectrophoresis wafer; a first multilayer transparent conductive film by a physical vapor phase method Deposited on the first glass substrate; a microcrystalline germanium semiconductor layer is deposited on the first multilayer transparent conductive film by a chemical vapor phase method, and the crystal grain size of the microcrystalline germanium semiconductor layer is about 1-3 um a second glass substrate disposed on the first multilayer transparent conductive film; a second multilayer transparent conductive film deposited on the second glass substrate by a physical vapor phase method; a first hole, a second glass substrate and the second multilayer transparent conductive film for allowing a cancer cell to pass through the medium; a second hole penetrating the second glass substrate and the second multilayer transparent conductive film for a medium through which air passes; and an alternating current signal source electrically connected to the first multilayer transparent conductive film and the second multilayer transparent conductive film. The light-induced dielectrophoresis wafer of claim 1, wherein the first multilayer transparent conductive film further comprises: a first zinc oxide aluminum-doped layer deposited on the first glass by a physical vapor phase method; a substrate having a thickness of about 600 nm; a first metal thin film layer deposited on the first zinc oxide aluminum-doped layer by a physical vapor phase method, having a thickness of about 5 nm to 10 nm; and a second oxidation a zinc-doped aluminum layer is deposited on the first metal thin film layer by a physical vapor phase method, The thickness is about 600 nm. The light-induced dielectrophoresis wafer according to claim 1, wherein the second multilayer transparent conductive film further comprises: a third zinc oxide aluminum-doped layer deposited on the second glass by a physical vapor phase method; a bottom of the substrate having a thickness of 600 nm; a second metal thin film layer deposited on the third zinc oxide aluminum-doped layer by a physical vapor phase method, having a thickness of about 5 nm to 10 nm; and a fourth zinc oxide layer The aluminum-doped layer is deposited on the second metal thin film layer by a physical vapor phase method, and has a thickness of about 600 nm. The photoinductive dielectrophoresis wafer according to claim 1, wherein the microcrystalline germanium semiconductor layer has a thickness of 300 nm. The photoinductive dielectrophoresis wafer of claim 1, wherein the first multilayer transparent conductive film has a thickness of between about 5 and 15 um. The light-induced dielectrophoresis wafer of claim 1, wherein the second multilayer transparent conductive film has a thickness of between about 5 and 15 μm. The light-induced dielectrophoresis wafer according to claim 2, wherein the material of the first metal thin film layer is gold (Au). The light-induced dielectrophoresis wafer according to claim 3, wherein the material of the second metal thin film layer is gold (Au).