TWI579518B - Supporting base for sintering - Google Patents
Supporting base for sintering Download PDFInfo
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- TWI579518B TWI579518B TW104141188A TW104141188A TWI579518B TW I579518 B TWI579518 B TW I579518B TW 104141188 A TW104141188 A TW 104141188A TW 104141188 A TW104141188 A TW 104141188A TW I579518 B TWI579518 B TW I579518B
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Description
本發明係關於一種承載基板，特別關於一種燒結承載基板。 The present invention relates to a carrier substrate, and more particularly to a sintered carrier substrate.
燒結承載基板，係用於承載一燒結件，並置於高溫爐中，以對該燒結件進行燒結。舉例而言，係能夠用於積層陶瓷電容(multi-layer ceramic capacitor)的製作，並耐受高達1600℃之高溫以進行燒結。因此，該燒結承載基板必須在高溫有良好的機械性質及化學安定性，且於燒結過程中不易膨脹或收縮變形，以避免影響積層陶瓷電容之燒結品質，或使該燒結承載基板之使用壽命降低。 The sintered carrier substrate is used to carry a sintered part and placed in a high temperature furnace to sinter the sintered part. For example, it can be used for the fabrication of multi-layer ceramic capacitors and withstand temperatures up to 1600 ° C for sintering. Therefore, the sintered carrier substrate must have good mechanical properties and chemical stability at high temperatures, and is not easily expanded or contracted during sintering to avoid affecting the sintering quality of the laminated ceramic capacitor, or to reduce the service life of the sintered carrier substrate. .
一種習知的燒結承載基板，係以碳化矽(SiC)製成。碳化矽之昇華溫度為2700℃左右，且密度低、強度高，適合作為該燒結承載基板之材料。惟，該燒結承載基板容易於表面形成少量二氧化矽，進而在燒結時與該燒結件反應而黏著，影響該燒結件之品質，且使該燒結承載基板無法重複使用。 A conventional sintered carrier substrate made of tantalum carbide (SiC). The sublimation temperature of niobium carbide is about 2700 ° C, and the density is low and the strength is high, which is suitable as a material for the sintered carrier substrate. However, the sintered carrier substrate is likely to form a small amount of cerium oxide on the surface, and reacts with the sintered member during sintering to adhere to the sintered member, which affects the quality of the sintered member and makes the sintered carrier substrate unreusable.
針對上述缺陷，經過改良的一種燒結承載基板，係於一碳化矽基板之表面塗佈一氧化鋯層。由於氧化鋯(ZrO2)之熔點約為2700℃，且在高溫下的穩定性佳，不會與該燒結件作用，而能夠維持該燒結件之品質。惟，由於氧化鋯與碳化矽之膨脹係數差異較大，於燒結時，該氧化鋯層會因膨脹而龜裂剝落，影響該燒結承載基板之壽命。 In response to the above drawbacks, a modified sintered carrier substrate is coated with a zirconium oxide layer on the surface of a tantalum carbide substrate. Since zirconium oxide (ZrO 2 ) has a melting point of about 2700 ° C and has good stability at a high temperature, it does not act on the sintered member, and the quality of the sintered member can be maintained. However, since the difference in expansion coefficient between zirconia and tantalum carbide is large, the zirconia layer may be cracked and peeled off due to expansion during sintering, which affects the life of the sintered carrier substrate.
依據上述，有必要提供一種燒結承載基板，以碳化矽為基礎，而能提供良好強度，同時具有附著力佳之一氧化鋯層，使該氧化鋯層 於燒結時亦不易剝落。 According to the above, it is necessary to provide a sintered carrier substrate which is based on tantalum carbide and can provide good strength and has a good adhesion of one of the zirconium oxide layers, so that the zirconium oxide layer It is also not easy to peel off during sintering.
本發明提供一種燒結承載基板，係以碳化矽為基礎，且可以避免其所具有之一氧化鋯層於燒結時龜裂剝落者。 The invention provides a sintered bearing substrate which is based on tantalum carbide and can avoid the cracking and spalling of one of the zirconia layers during sintering.
本發明提供一種燒結承載基板，包含：一碳化矽基板；一二氧化矽層，該二氧化矽層包含相對之一第一表面及一第二表面，且該第一表面結合於該碳化矽基板；及一氧化鋯層，結合於該二氧化矽層之第二表面。藉此，可以達成「提升該燒結承載基板之使用壽命」功效。 The present invention provides a sintered carrier substrate comprising: a tantalum carbide substrate; a germanium dioxide layer, the germanium dioxide layer comprising a first surface and a second surface, and the first surface is bonded to the tantalum carbide substrate And a zirconium oxide layer bonded to the second surface of the ceria layer. Thereby, the effect of "increasing the service life of the sintered carrier substrate" can be achieved.
本發明之燒結承載基板，其中，該二氧化矽層之厚度為1~30μm。藉此，可以達成「穩固該氧化鋯層之附著」及「降低該燒結承載基板之製造成本」等功效。 In the sintered carrier substrate of the present invention, the thickness of the ruthenium dioxide layer is 1 to 30 μm. Thereby, the effects of "stabilizing the adhesion of the zirconia layer" and "reducing the manufacturing cost of the sintered carrier substrate" can be achieved.
本發明之燒結承載基板，其中，該氧化鋯層係由一釔安定氧化鋯製成。藉此，可以達成「提升該氧化鋯層之高溫化學穩定性」功效。 The sintered carrier substrate of the present invention, wherein the zirconia layer is made of yttrium zirconia. Thereby, the effect of "increasing the high-temperature chemical stability of the zirconia layer" can be achieved.
本發明之燒結承載基板，其中，該釔安定氧化鋯包含莫爾比率2~3%之三氧化二釔及97~97%之氧化鋯。藉此，可以達成「提升該氧化鋯層之機械性質」功效。 In the sintered carrier substrate of the present invention, the yttrium zirconia comprises cerium oxide having a Mohr ratio of 2 to 3% and zirconia of 97 to 97%. Thereby, the effect of "improving the mechanical properties of the zirconia layer" can be achieved.
本發明之燒結承載基板，其中，該釔安定氧化鋯包含莫爾比率8~12%之三氧化二釔及88~92%之氧化鋯。藉此，可以達成「提升該氧化鋯層之熱穩定性」功效。 In the sintered carrier substrate of the present invention, the yttrium zirconia comprises lanthanum trioxide having a Mohr ratio of 8 to 12% and zirconia of 88 to 92%. Thereby, the effect of "increasing the thermal stability of the zirconia layer" can be achieved.
本發明之燒結承載基板，其中，該二氧化矽層係以溶膠-凝膠法製成。藉此，可以達成「提供適當厚度之該二氧化矽層」功效。 The sintered carrier substrate of the present invention, wherein the ruthenium dioxide layer is formed by a sol-gel method. Thereby, the effect of "providing the ceria layer of a suitable thickness" can be achieved.
本發明之燒結承載基板，其中，該氧化鋯層係以電漿熔射噴塗或火焰熔射噴塗法製成。可以達成「簡化該氧化鋯層之製程」功效。 The sintered carrier substrate of the present invention, wherein the zirconia layer is formed by plasma spray coating or flame spray coating. The "simplification of the process of the zirconia layer" can be achieved.
本發明之燒結承載基板，藉由該二氧化矽層之設置，使該氧化鋯層能夠穩固結合於該碳化矽基板，不會於燒結時剝落，進而達到「提 升該燒結承載基板之使用壽命」功效。 The sintered carrier substrate of the present invention can be stably bonded to the tantalum carbide substrate by the arrangement of the ceria layer, and does not peel off during sintering, thereby achieving The service life of the sintered carrier substrate is increased.
本發明之燒結承載基板，藉由該碳化矽基板之高昇華溫度以及該氧化鋯層之高熔點，使該燒結承載基板可以應用於1600℃以內之溫度進行燒結，達成「擴大該燒結承載基板之適用範圍」功效。 In the sintered carrier substrate of the present invention, the sintered carrier substrate can be sintered at a temperature within 1600 ° C by the high sublimation temperature of the tantalum carbide substrate and the high melting point of the zirconium oxide layer, thereby achieving the expansion of the sintered carrier substrate. Scope of application.
由於本發明之燒結承載基板設有該碳化矽基板藉由該碳化矽基板之高強度及低密度，而能夠達成「提升該燒結承載基板之強度」及「降低該燒結承載基板之重量」等功效。 Since the sintered carrier substrate of the present invention is provided with the high-strength and low-density of the tantalum carbide substrate, the effect of "increasing the strength of the sintered carrier substrate" and "reducing the weight of the sintered carrier substrate" can be achieved. .
由於本發明之燒結承載基板設有該氧化鋯層，藉由該氧化鋯層在高溫下的安定性質，不會於燒結過程中與該燒結件反應，而能夠達成「提升燒結品質」功效。 Since the sintered bearing substrate of the present invention is provided with the zirconia layer, the stability of the zirconia layer at a high temperature does not react with the sintered member during sintering, and the effect of "increasing the sintering quality" can be achieved.
1‧‧‧碳化矽基板 1‧‧‧Carbide substrate
2‧‧‧二氧化矽層 2‧‧‧ cerium oxide layer
3‧‧‧氧化鋯層 3‧‧‧Zirconium oxide layer
第1圖：係本發明燒結承載基板之立體結構圖。 Fig. 1 is a perspective structural view showing a sintered carrier substrate of the present invention.
為讓本發明之上述及其他目的、特徵及優點能更明顯易懂，下文特舉本發明之較佳實施例，並配合所附圖式，作詳細說明如下：本發明之燒結承載基板係用於承載一燒結件，例如積層陶瓷電容等，以對該燒結件進行燒結。如第1圖所示，該燒結承載基板包含一碳化矽基板1、一二氧化矽層2及一氧化鋯層3。 The above and other objects, features, and advantages of the present invention will become more apparent and understood. A sintered member, such as a laminated ceramic capacitor or the like, is carried to sinter the sintered member. As shown in FIG. 1, the sintered carrier substrate comprises a tantalum carbide substrate 1, a hafnium oxide layer 2, and a zirconium oxide layer 3.
詳言之，該碳化矽基板1係用以提供該燒結承載基板之強度，由於碳化矽可以承受高達2700℃之高溫，且膨脹係數低、不易變形，故能夠承載該燒結件之重量。此外，碳化矽之密度僅為3.2g/cm2，故以碳化矽製作之該碳化矽基板1，能夠使該燒結承載基板具有輕量之優點。 In detail, the tantalum carbide substrate 1 is used to provide the strength of the sintered carrier substrate. Since the tantalum carbide can withstand a high temperature of up to 2700 ° C and has a low expansion coefficient and is not easily deformed, it can carry the weight of the sintered member. Further, since the density of tantalum carbide is only 3.2 g/cm 2 , the tantalum carbide substrate 1 made of tantalum carbide can provide the sintered carrier substrate with a light weight advantage.
該二氧化矽層2包含相對之一第一表面及一第二表面，且該第一表面結合該碳化矽基板1，該第二表面結合該氧化鋯層3。由於該碳化 矽基板1及該氧化鋯層3之膨脹係數分別為4×10-6/℃及10.1×10-6/℃，二者差異較大，因此，必需於該碳化矽基板1及該氧化鋯層3之間設置該二氧化矽層2作為緩衝，使該氧化鋯層3能夠藉由該二氧化矽層2而穩固結合於該碳化矽基板1。反之，若未設置該二氧化矽層2，則於燒結時，由於該碳化矽基板1與該氧化鋯層3之膨脹程度不同，將導致該氧化鋯層3龜裂脫落。 The ceria layer 2 includes a first surface and a second surface, and the first surface is bonded to the tantalum carbide substrate 1, and the second surface is bonded to the zirconium oxide layer 3. Since the expansion coefficients of the tantalum carbide substrate 1 and the zirconium oxide layer 3 are 4×10 -6 /° C. and 10.1×10 -6 /° C, respectively, the difference between the two is large, and therefore, the tantalum carbide substrate 1 and the The ceria layer 2 is provided as a buffer between the zirconium oxide layers 3, so that the zirconium oxide layer 3 can be firmly bonded to the tantalum carbide substrate 1 by the ceria layer 2. On the other hand, if the cerium oxide layer 2 is not provided, the zirconia layer 3 is cracked and detached due to the difference in the degree of expansion of the lanthanum carbide substrate 1 and the zirconia layer 3 during sintering.
於本實施例中，該二氧化矽層2係透過溶膠-凝膠(sol-gel)法製得，例如以四乙氧基矽烷(TEOS)為前趨物、乙醇為溶劑，並以氨水為催化劑，攪拌均勻後形成溶膠，續塗佈於該碳化矽基板之表面，乾燥後形成凝膠，再經1000℃左右之燒結，冷卻後即形成該二氧化矽層2。惟，本發明不限制該二氧化矽層2之製作方式。 In the present embodiment, the cerium oxide layer 2 is obtained by a sol-gel method, for example, tetraethoxy decane (TEOS) as a precursor, ethanol as a solvent, and ammonia as a catalyst. After stirring uniformly, a sol is formed, which is continuously applied to the surface of the tantalum carbide substrate, dried to form a gel, and then sintered at about 1000 ° C to form the cerium oxide layer 2 after cooling. However, the present invention does not limit the manner in which the ceria layer 2 is produced.
於本實施例中，該二氧化矽層2之厚度為1~30μm。藉由該二氧化矽層2之厚度為1μm以上，而能夠提供更佳的緩衝效果，並穩固該氧化鋯層3之附著。此外，藉由該二氧化矽層2之厚度為30μm以下，而可以適當降低該燒結承載基板之厚度及重量，並降低該燒結承載基板之製作成本。 In the present embodiment, the thickness of the cerium oxide layer 2 is 1 to 30 μm. By the thickness of the cerium oxide layer 2 being 1 μm or more, it is possible to provide a better buffering effect and to stabilize the adhesion of the zirconia layer 3. Further, by the thickness of the ceria layer 2 being 30 μm or less, the thickness and weight of the sintered carrier substrate can be appropriately reduced, and the production cost of the sintered carrier substrate can be reduced.
該氧化鋯層係設置於該二氧化矽層2上，並藉由該二氧化矽層2而結合於該碳化矽基板1。由於氧化鋯的高溫安定性佳，且可以承受2700℃之高溫，不會與該燒結件反應，而能夠維持該燒結件的燒結品質。此外，藉由該二氧化矽層2之設置，使該氧化鋯層3不會於燒結時剝落，而可以維持該燒結承載基板之壽命。 The zirconia layer is provided on the ruthenium dioxide layer 2, and is bonded to the ruthenium carbide substrate 1 by the ruthenium dioxide layer 2. Since zirconia has high temperature stability and can withstand a high temperature of 2700 ° C, it does not react with the sintered part, and the sintering quality of the sintered part can be maintained. Further, by the arrangement of the ceria layer 2, the zirconium oxide layer 3 is not peeled off during sintering, and the life of the sintered carrier substrate can be maintained.
此外，藉由於氧化鋯中添加少量氧化鈣或三氧化二釔(Y2O3)等成分，可以穩定氧化鋯之晶型。於本實施例中，該氧化鋯層可以由一釔安定氧化鋯製成。該釔安定氧化鋯係能夠包含莫爾比率2~3%之三氧化二釔，而使該氧化鋯層3在室溫中為均質的正方晶相結構，以具有優異的機 械性質。或者，可以使該釔安定氧化鋯包含莫爾比率8~12%之三氧化二釔，使該氧化鋯層3具有立方晶相結構，而有良好的熱穩定性。 Further, the crystal form of zirconia can be stabilized by adding a small amount of a component such as calcium oxide or antimony trioxide (Y 2 O 3 ) to zirconia. In this embodiment, the zirconia layer may be made of yttrium zirconia. The yttrium zirconia system can contain lanthanum trioxide having a Mohr ratio of 2 to 3%, and the zirconia layer 3 has a homogeneous tetragonal phase structure at room temperature to have excellent mechanical properties. Alternatively, the yttrium stabilized zirconia may comprise a lanthanum trioxide having a molar ratio of 8 to 12%, such that the zirconia layer 3 has a cubic phase structure and has good thermal stability.
該氧化鋯層3係能夠藉由噴塗法製作，舉例而言，可以藉由電漿熔射噴塗或火焰熔射噴塗，將氧化鋯或該釔安定氧化鋯粉末噴塗於該二氧化矽層2上，再經1450℃之熱處理，以形成該氧化鋯層3。 The zirconia layer 3 can be formed by a spray coating method. For example, zirconia or the yttrium stabilized zirconia powder can be sprayed onto the ruthenium dioxide layer 2 by plasma spray coating or flame spray coating. Then, heat treatment is performed at 1450 ° C to form the zirconia layer 3.
綜合上述，本發明之燒結承載基板，藉由該二氧化矽層之設置，使該氧化鋯層能夠穩固結合於該碳化矽基板，不會於燒結時剝落，進而達到「提升該燒結承載基板之使用壽命」功效。 In summary, in the sintered carrier substrate of the present invention, the zirconia layer can be firmly bonded to the lanthanum carbide substrate by the arrangement of the ruthenium dioxide layer, and does not peel off during sintering, thereby achieving "lifting the sintered carrier substrate. Service life".
本發明之燒結承載基板，藉由該碳化矽基板之高昇華溫度以及該氧化鋯層之高熔點，使該燒結承載基板可以應用於1600℃以內之溫度進行燒結，達成「擴大該燒結承載基板之適用範圍」功效。 In the sintered carrier substrate of the present invention, the sintered carrier substrate can be sintered at a temperature within 1600 ° C by the high sublimation temperature of the tantalum carbide substrate and the high melting point of the zirconium oxide layer, thereby achieving the expansion of the sintered carrier substrate. Scope of application.
再者，由於本發明之燒結承載基板設有該碳化矽基板藉由該碳化矽基板之高強度及低密度，而能夠達成「提升該燒結承載基板之強度」及「降低該燒結承載基板之重量」等功效。 Furthermore, since the sintered carrier substrate of the present invention is provided with the tantalum carbide substrate, the high strength and low density of the tantalum carbide substrate can achieve "increasing the strength of the sintered carrier substrate" and "reducing the weight of the sintered carrier substrate". And other effects.
此外，由於本發明之燒結承載基板設有該氧化鋯層，藉由該氧化鋯層在高溫下的安定性質，不會於燒結過程中與該燒結件反應，而能夠達成「提升燒結品質」功效。 In addition, since the zirconia layer of the present invention is provided with the zirconia layer, the zirconia layer has a stable property at a high temperature, and does not react with the sintered member during the sintering process, thereby achieving the effect of "increasing the sintering quality". .
雖然本發明已利用上述較佳實施例揭示，然其並非用以限定本發明，任何熟習此技藝者在不脫離本發明之精神和範圍之內，相對上述實施例進行各種更動與修改仍屬本發明所保護之技術範疇，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the invention has been described in connection with the preferred embodiments described above, it is not intended to limit the scope of the invention. The technical scope of the invention is protected, and therefore the scope of the invention is defined by the scope of the appended claims.
1‧‧‧碳化矽基板 1‧‧‧Carbide substrate
2‧‧‧二氧化矽層 2‧‧‧ cerium oxide layer
3‧‧‧氧化鋯層 3‧‧‧Zirconium oxide layer
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| JPH1150108A (en) * | 1997-07-28 | 1999-02-23 | Toshiba Tungaloy Co Ltd | Packing material for sintering for powder metallurgy and production of sintered body using the same |
| TW200613479A (en) * | 2004-06-16 | 2006-05-01 | Degussa | Coating formulation having improved rheological properties |
| CN102083527A (en) * | 2008-07-02 | 2011-06-01 | 法商圣高拜欧洲实验及研究中心 | Gasifier reactor internal coating |
-
2015
- 2015-12-08 TW TW104141188A patent/TWI579518B/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1150108A (en) * | 1997-07-28 | 1999-02-23 | Toshiba Tungaloy Co Ltd | Packing material for sintering for powder metallurgy and production of sintered body using the same |
| TW200613479A (en) * | 2004-06-16 | 2006-05-01 | Degussa | Coating formulation having improved rheological properties |
| CN102083527A (en) * | 2008-07-02 | 2011-06-01 | 法商圣高拜欧洲实验及研究中心 | Gasifier reactor internal coating |
Non-Patent Citations (1)
| Title |
|---|
| 游力建，氧化現象對碳化矽/氧化鋁/氧化鋯覆何材料機械性質的影響，交通大學，2004/7 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201721072A (en) | 2017-06-16 |
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